JP2584389B2 - ECR plasma etching method - Google Patents
ECR plasma etching methodInfo
- Publication number
- JP2584389B2 JP2584389B2 JP4150783A JP15078392A JP2584389B2 JP 2584389 B2 JP2584389 B2 JP 2584389B2 JP 4150783 A JP4150783 A JP 4150783A JP 15078392 A JP15078392 A JP 15078392A JP 2584389 B2 JP2584389 B2 JP 2584389B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- ecr plasma
- magnetic field
- etching method
- ecr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、異方性ＥＣＲプラズマ
エッチング加工方法に関する。The present invention relates to an anisotropic ECR plasma etching method.
【０００２】[0002]
【従来の技術】従来のＥＣＲプラズマエッチング方法
は、永久磁石を使用して一定磁界０．０８７５Ｔ中で電
子が磁力線の周りで円運動をし、その角振動数ωCとマ
イクロ波の角振動数ωが一致してＥＣＲ現象が生じ、こ
れをエッチング加工に応用している。2. Description of the Related Art In a conventional ECR plasma etching method, electrons make a circular motion around a line of magnetic force in a constant magnetic field of 0.0875 T using a permanent magnet, and the angular frequency ω C and the angular frequency of a microwave are used. ω coincides with each other to cause an ECR phenomenon, which is applied to etching.
【０００３】[0003]
【発明が解決しようとする課題】従来のＥＣＲプラズマ
エッチング方法では、一定磁界としているためイオン旋
回流が速く、図２に示すようにイオンが散乱して試料の
裏側に回り込み、角θが大きくなって異方性処理が困難
である。In the conventional ECR plasma etching method, the ion swirling flow is fast due to the constant magnetic field. As shown in FIG. 2, the ions are scattered and go around the back side of the sample, and the angle θ becomes large. And anisotropic treatment is difficult.
【０００４】[0004]
【課題を解決するための手段】本発明はＥＣＲ現象を利
用したＥＣＲプラズマエッチング加工方法においてマイ
クロ波の進行方向と平行に０．０８Ｔ以上のパルス磁界
を与えて、高電離プラズマを生成することを特徴とする
ＥＣＲプラズマエッチング加工方法である。上記パルス
磁界は０．０１〜２００ｍｓの範囲のパルス時間のみソ
レノイドコイルに電流を流して発生させるとよい。この
範囲とすることによりパルスオンタイムの時の瞬時には
平均して従来の一定磁界の０．０８７５Ｔを越える磁界
が生じ、電子、イオンの旋回曲率と速度は小さくなり、
方向が真直となって、異方性処理効果が大となり、試料
の裏面への回り込みがなく、正確な加工ができる。SUMMARY OF THE INVENTION The present invention provides an ECR plasma etching method utilizing the ECR phenomenon, in which a pulse magnetic field of 0.08 T or more is applied in parallel with the direction of microwave propagation to generate highly ionized plasma. This is a characteristic ECR plasma etching processing method. The pulse magnetic field may be generated by applying a current to the solenoid coil only for a pulse time in the range of 0.01 to 200 ms. By setting it within this range, a magnetic field exceeding the conventional constant magnetic field of 0.0875 T is generated on average at the moment of the pulse on time, and the turning curvature and velocity of electrons and ions are reduced.
Since the direction is straight, the effect of the anisotropic treatment is large, and accurate processing can be performed without wrapping around the back surface of the sample.
【０００５】[0005]
【実施例】以下実施例を図面に基づいて説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
【０００６】図１において１は加工すべき試料である。
２はイオン源でＥＣＲイオン源である。３はパルス磁界
を発生させるためのソレノイドコイルで、６が２．４５
ＧＨｚのマイクロ波の進行方向を示す。４は冷却水、５
はエッチング用ガス導入口である。In FIG. 1, reference numeral 1 denotes a sample to be processed.
An ion source 2 is an ECR ion source. 3 is a solenoid coil for generating a pulse magnetic field, and 6 is 2.45.
3 shows the traveling direction of a microwave of GHz. 4 is cooling water, 5
Is an etching gas inlet.
【０００７】試料としてＳｉＯ2を用いた場合、エッチ
ング用ガスとして、ＣＦ4＋２０％Ｈ2を用い、０．０３
Ｔｏｒｒの雰囲気とした。マイクロ波は上記のとおり
２．４５ＧＨｚで３５０Ｗである。イオン源２の中で発
生した電子は２．４５ＧＨｚのマイクロ波６によって極
めて速い（０．４ｎｓｅｃ）スピードで振動し、この時
イオン源２にマイクロ波６の進行方向と平行なパルス磁
界を、ソレノイドコイル３にパルス電流を流すことによ
って発生させ、電子旋回力を与えた。このときのパルス
幅は０．０１〜２００ｍｓの範囲内で変化させて、エッ
チング速度並びに回り込み角（θ）について試験をし
た。又、磁界の電源波形が直流の場合を比較例として挙
げた。結果を表１に示す。When SiO 2 is used as a sample, CF 4 + 20% H 2 is used as an etching gas,
The atmosphere was Torr. The microwave is 350 W at 2.45 GHz as described above. Electrons generated in the ion source 2 are vibrated at a very high speed (0.4 nsec) by the microwave 6 of 2.45 GHz, and a pulse magnetic field parallel to the traveling direction of the microwave 6 is applied to the ion source 2 at this time. It was generated by applying a pulse current to the coil 3 to give an electron turning force. At this time, the pulse width was changed within the range of 0.01 to 200 ms, and the etching rate and the wraparound angle (θ) were tested. Also, the case where the power supply waveform of the magnetic field is DC is described as a comparative example. Table 1 shows the results.
【０００８】[0008]
【表１】 [Table 1]
【０００９】上記表１において、例えばパルスτON０．
０１ｍｓ、平均磁束密度０．０８７５Ｔの場合、試料の
ＳｉＯ2エッチング速度は０．１８μ／ｍｉｎと３倍以
上となり、回り込み角θは３．５°で直流電源の場合に
比べて約１／４となり、異方性処理効果が大きいことが
判った。In Table 1, for example, the pulse τ ON 0.
In the case of 01 ms and an average magnetic flux density of 0.0875 T, the SiO 2 etching rate of the sample is 0.18 μ / min, which is three times or more, and the wraparound angle θ is 3.5 °, which is about ４ of that of a DC power supply. It was found that the anisotropic treatment effect was large.
【００１０】さらに試料としてＳｉ3Ｎ4、Ａｌ2Ｏ3を用
いた場合についても試験した。エッチング用ガス、雰囲
気、マイクロ波出力はＳｉＯ2の場合と同じである。た
だし、ソレノイドコイルに流すパルス電流のパルス幅は
０．０２〜１００ｍｓの範囲内でエッチング速度並びに
回り込み角度（θ）について調べた。結果を表２および
表３に示す。Tests were also conducted on samples using Si 3 N 4 and Al 2 O 3 . The etching gas, atmosphere, and microwave output are the same as those for SiO 2 . However, the pulse width of the pulse current flowing through the solenoid coil was in the range of 0.02 to 100 ms, and the etching rate and the wraparound angle (θ) were examined. The results are shown in Tables 2 and 3.
【００１１】[0011]
【表２】 [Table 2]
【００１２】[0012]
【表３】 [Table 3]
【００１３】[0013]
【発明の効果】本発明はＥＣＲプラズマエッチング加工
においてマイクロ波の進行方向と平行にパルス磁界を与
えて、電子に対して衝撃的旋回力を与えることにより、
異方性処理が効率良く行うことができる。According to the present invention, in an ECR plasma etching process, a pulse magnetic field is applied in parallel to the traveling direction of a microwave to give an impact swirling force to electrons.
Anisotropic treatment can be performed efficiently.
【図１】本発明の実施例の説明図である。FIG. 1 is an explanatory diagram of an embodiment of the present invention.
【図２】プラズマエッチング加工により回り込み角の説
明図である。FIG. 2 is an explanatory diagram of a wraparound angle due to plasma etching.
フロントページの続き (73)特許権者 999999999 大場 章 埼玉県朝霞市宮戸３丁目12番89号 (72)発明者 大場 和夫 埼玉県東村山市松葉町４丁目２番３号 (72)発明者 嶋 好範 神奈川県川崎市麻生区王禅寺768番地15 (72)発明者 大場 章 埼玉県朝霧市浜崎１丁目９番地の３− 205 (56)参考文献 特開 平４−48726（ＪＰ，Ａ) 特開 平２−77123（ＪＰ，Ａ) 特開 平２−312227（ＪＰ，Ａ) 特公 昭60−2388（ＪＰ，Ｂ２)Continued on the front page (73) Patent holder 999999999 Akira Oba 3-12-89 Miyado, Asaka-shi, Saitama (72) Inventor Kazuo Oba 4- 2-3 Matsuba-cho, Higashimurayama-shi, Saitama (72) Inventor Yoshi Shima No. 768-15, Ozenji, Aso-ku, Kawasaki City, Kanagawa Prefecture (72) Inventor Akira Oba 3-205, 1-9-9 Hamasaki, Asagiri-shi, Saitama Prefecture (56) References JP-A-4-48726 (JP, A) 2-77123 (JP, A) JP-A-2-312227 (JP, A) JP-B-60-2388 (JP, B2)
Claims (2)
を利用したＥＣＲプラズマエッチング加工方法におい
て、マイクロ波の進行方向と平行に０．０８Ｔ以上のパ
ルス磁界を与えて高電離プラズマを生成することを特徴
とするＥＣＲプラズマエッチング加工方法。1. An ECR plasma etching method utilizing an electron cyclotron resonance (ECR) phenomenon, wherein a highly ionized plasma is generated by applying a pulse magnetic field of 0.08 T or more in parallel with a traveling direction of a microwave. ECR plasma etching processing method.
囲のパルス時間のみソレノイドコイルに電流を流して発
生させるものである請求項１記載のＥＣＲプラズマエッ
チング加工方法。2. The ECR plasma etching method according to claim 1, wherein the pulse magnetic field is generated by applying a current to the solenoid coil only for a pulse time in a range of 0.01 to 200 ms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4150783A JP2584389B2 (en) | 1992-06-10 | 1992-06-10 | ECR plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4150783A JP2584389B2 (en) | 1992-06-10 | 1992-06-10 | ECR plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05339760A JPH05339760A (en) | 1993-12-21 |
| JP2584389B2 true JP2584389B2 (en) | 1997-02-26 |
Family
ID=15504341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4150783A Expired - Lifetime JP2584389B2 (en) | 1992-06-10 | 1992-06-10 | ECR plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584389B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000306894A (en) * | 1999-04-23 | 2000-11-02 | Nec Corp | Method of plasma treatment of wafer |
| US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS602388A (en) * | 1983-06-21 | 1985-01-08 | Fuji Xerox Co Ltd | Transfer-type thermal recorder |
| JP2679816B2 (en) * | 1988-06-24 | 1997-11-19 | 東京エレクトロン株式会社 | Plasma processing method |
| JP2972227B2 (en) * | 1989-05-29 | 1999-11-08 | 株式会社日立製作所 | Plasma processing method and apparatus |
| KR930004713B1 (en) * | 1990-06-18 | 1993-06-03 | 삼성전자 주식회사 | Plasma Generator and Method Using Modulation |
-
1992
- 1992-06-10 JP JP4150783A patent/JP2584389B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05339760A (en) | 1993-12-21 |
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