JP2578744B2 - Electronic beam measuring device - Google Patents
Electronic beam measuring deviceInfo
- Publication number
- JP2578744B2 JP2578744B2 JP59183914A JP18391484A JP2578744B2 JP 2578744 B2 JP2578744 B2 JP 2578744B2 JP 59183914 A JP59183914 A JP 59183914A JP 18391484 A JP18391484 A JP 18391484A JP 2578744 B2 JP2578744 B2 JP 2578744B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- metal plate
- electron beam
- measured
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Tests Of Electronic Circuits (AREA)
- Measurement Of Current Or Voltage (AREA)
Description
【発明の詳細な説明】 （技術分野） 本発明は半導体装置の内部の電位を測定する電子ビー
ム測定装置に関するものである。Description: TECHNICAL FIELD The present invention relates to an electron beam measurement device for measuring a potential inside a semiconductor device.
（従来技術） 従来の電子ビーム測定装置は、真空中で被測定半導体
装置を動作させるため該半導体装置の消費電力と熱抵抗
とで決まる温度における該半導体装置の電位しか測定す
ることができず、所望の温度における該半導体装置の内
部の電位を測定できないというような欠点があった。(Prior Art) A conventional electron beam measuring apparatus can measure only the potential of the semiconductor device at a temperature determined by the power consumption and the thermal resistance of the semiconductor device because the semiconductor device to be measured is operated in a vacuum. There is a disadvantage that the potential inside the semiconductor device at a desired temperature cannot be measured.
さらに、一般に真空中における半導体装置の熱抵抗は
大きいため、消費電力の大きな半導体装置の場合は、消
費電力と熱抵抗とで決まる半導体装置の温度が極めて高
くなり、該半導体装置が誤動作し、該半導体装置の内部
の正しい電位を測定できないというような欠点があっ
た。Furthermore, since the thermal resistance of a semiconductor device in a vacuum is generally large, in the case of a semiconductor device with large power consumption, the temperature of the semiconductor device determined by the power consumption and the thermal resistance becomes extremely high, and the semiconductor device malfunctions, There is a disadvantage that a correct potential inside the semiconductor device cannot be measured.
（発明の目的） 本発明の目的は上記欠点をなくした電子ビーム測定装
置を提供することである。(Object of the Invention) It is an object of the present invention to provide an electron beam measuring apparatus which eliminates the above disadvantages.
（発明の構成） 本発明の電子ビーム測定装置は所望の温度に設定した
金属板を被測定半導体装置に密着させることを特徴とす
る電子ビーム測定装置であり、特にヒータを密着させ、
かつペルチェ（PELTIER）効果を用いて所望の温度に設
定した金属板を被測定半導体装置に密着させることを特
徴とする電子ビーム測定装置である。(Structure of the Invention) The electron beam measuring apparatus of the present invention is an electron beam measuring apparatus characterized in that a metal plate set at a desired temperature is brought into close contact with a semiconductor device to be measured.
The electron beam measuring apparatus is characterized in that a metal plate set at a desired temperature is brought into close contact with a semiconductor device to be measured using a Peltier effect.
（作用） 本発明によれば被測定半導体装置の消費電力や熱抵抗
にかかわらず、該半導体装置を所望の温度に設定するこ
とができる。(Operation) According to the present invention, the semiconductor device to be measured can be set to a desired temperature regardless of the power consumption and the thermal resistance of the semiconductor device.
（発明の効果） 本発明は所望の温度における半導体装置の内部の電位
を測定する効果があり、消費電力の大きい半導体装置の
破壊防止のために熱を強制的に逃すことが可能となる。
更に、金属板に密着する冷却装置とヒーターとを有する
ため温度設定の微調節が可能となる。(Effects of the Invention) The present invention has the effect of measuring the internal potential of a semiconductor device at a desired temperature and makes it possible to forcibly dissipate heat in order to prevent the semiconductor device with high power consumption from being destroyed.
Further, since the cooling device and the heater are provided in close contact with the metal plate, the temperature can be finely adjusted.
（実施例） 以下に本発明の一実施例について第１図を参照して説
明する。Embodiment An embodiment of the present invention will be described below with reference to FIG.
図中１は鏡筒で内部は真空になっている。電子銃２か
ら放出された電子ビームは、パルス電子ビーム発生器５
でパルス化され、さらに電子レンズ3,4で集束され被測
定半導体装置30に到達する。In the figure, reference numeral 1 denotes a lens barrel, and the inside is vacuum. The electron beam emitted from the electron gun 2 is supplied to a pulsed electron beam generator 5.
Then, the laser beam is focused by the electron lenses 3 and 4 and reaches the semiconductor device 30 to be measured.
被測定半導体装置30は被測定半導体装置駆動系11で駆
動されている。The semiconductor device under test 30 is driven by the semiconductor device under test drive system 11.
被測定半導体装置30から放出された二次電子は二次電
子検出器12で検出され、二次電子検出信号を出力する。The secondary electrons emitted from the semiconductor device under test 30 are detected by the secondary electron detector 12, and output a secondary electron detection signal.
信号処理系10は被測定半導体装置駆動系11と同期して
おり、またパルス電子ビーム発生器5,電子レンズ3,4を
制御するとともに二次電子検出信号の信号処理を行な
う。金属板40は被測定半導体装置30と密着している。The signal processing system 10 is synchronized with the semiconductor device under test drive system 11, and controls the pulsed electron beam generator 5, the electron lenses 3, 4, and performs signal processing of the secondary electron detection signal. The metal plate 40 is in close contact with the semiconductor device 30 to be measured.
金属板40,p型半導体60,金属板50,電源70,金属板51,N
型半導体61は閉じた電気回路を構成している。Metal plate 40, p-type semiconductor 60, metal plate 50, power supply 70, metal plate 51, N
The mold semiconductor 61 forms a closed electric circuit.
被測定半導体装置30を冷却するためには、矢印の向き
に直流を流すと、ペルチェ効果により金属板40では冷却
が起こり金属板50,51では発熱が起こる。In order to cool the semiconductor device 30 to be measured, when a direct current is supplied in the direction of the arrow, the metal plate 40 is cooled by the Peltier effect, and the metal plates 50 and 51 generate heat.
半導体5,6の材料としてペルチェ効果の大きいBi2Te3,
Bi2Se3,PbTeおよびPbSeなどを用いれば、冷却，発熱側
の温度差は80deg程度にも達するので、発熱側の放熱が
十分であれば冷却側を氷点下以下の温度に容易に冷却で
きる。B i2 T e3 with large Peltier effect as a material for semiconductors 5 and 6,
By using B i2 S e3, and P b T e and P b S e, the cooling, the temperature difference of the heating side also reaches about 80 deg, the cooling side following sub-zero if heating side of the heat dissipation sufficient temperature Can be easily cooled.
被測定半導体装置30を昇温するためには電源81に接続
されたヒータ80を動作させヒータ80に密着した金属板40
を昇温させる。In order to raise the temperature of the semiconductor device 30 to be measured, the heater 80 connected to the power supply 81 is operated, and the metal plate 40 adhered to the heater 80 is operated.
Is heated.
以上説明した様に被測定半導体装置30に密着させた金
属板40をペルチェ効果を用いた冷却と、ヒータ80の動作
による昇温とで所望の温度に設定することにより所望の
温度における被測定半導体装置30の内部の電位を容易に
測定することができる。As described above, by setting the metal plate 40 in close contact with the semiconductor device 30 to be measured to a desired temperature by cooling using the Peltier effect and raising the temperature by operating the heater 80, the semiconductor device at the desired temperature is set. The potential inside the device 30 can be easily measured.
（発明のまとめ） 上記実施例では、被測定半導体装置上に密着させる金
属板の冷却法として、ペルチェ効果を用いた冷却法を例
としてあげたが、冷却法としてはこの他にも、たとえば
液体窒素による冷却など種々の方法がある。(Summary of the Invention) In the above embodiment, the cooling method using the Peltier effect is described as an example of the cooling method of the metal plate adhered on the semiconductor device to be measured. There are various methods such as cooling with nitrogen.
第１図は本発明の一実施例の電子ビーム測定装置の図で
ある。 １……鏡筒、２……電子銃、3,4……電子レンズ、５…
…パルス電子ビーム発生器、10……信号処理系、11……
被測定半導体装置駆動系、12……二次電子検出器、30…
…被測定半導体装置、40,50,51……金属板、60……ｐ型
半導体、61……Ｎ型半導体、70……電源、80……ヒー
タ、81……金属板。FIG. 1 is a diagram of an electron beam measuring apparatus according to one embodiment of the present invention. 1 ... Barrel, 2 ... Electron gun, 3,4 ... Electronic lens, 5 ...
... Pulse electron beam generator, 10 ... Signal processing system, 11 ...
Driving system for semiconductor device to be measured, 12 ... Secondary electron detector, 30 ...
... semiconductor device to be measured, 40, 50, 51 ... metal plate, 60 ... p-type semiconductor, 61 ... N-type semiconductor, 70 ... power supply, 80 ... heater, 81 ... metal plate.
Claims (2)
手段と、前記半導体装置から放出される二次電子を検出
して、前記半導体装置の内部電位を測定する手段と、前
記半導体装置に密着する金属板と、前記金属板に密着す
るヒーターと、前記金属板を冷却する冷却装置とを有
し、前記金属板の冷却装置による冷却と前記ヒーターに
よる昇温とで前記半導体装置を所定の温度に設定したこ
とを特徴とする電子ビーム測定装置。A means for irradiating the semiconductor device to be measured with an electron beam; a means for detecting secondary electrons emitted from the semiconductor device to measure an internal potential of the semiconductor device; A metal plate, a heater in close contact with the metal plate, and a cooling device for cooling the metal plate, wherein the semiconductor device is cooled to a predetermined temperature by cooling the metal plate with a cooling device and increasing the temperature by the heater. An electron beam measuring apparatus characterized in that it is set to:
を用いたものであることを特徴とする特許請求の範囲
（１）項記載の電子ビーム測定装置。2. The electron beam measuring apparatus according to claim 1, wherein said cooling device uses a PELTIER effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59183914A JP2578744B2 (en) | 1984-09-03 | 1984-09-03 | Electronic beam measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59183914A JP2578744B2 (en) | 1984-09-03 | 1984-09-03 | Electronic beam measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61221660A JPS61221660A (en) | 1986-10-02 |
| JP2578744B2 true JP2578744B2 (en) | 1997-02-05 |
Family
ID=16144017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59183914A Expired - Fee Related JP2578744B2 (en) | 1984-09-03 | 1984-09-03 | Electronic beam measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2578744B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350982A (en) * | 1976-10-20 | 1978-05-09 | Mitsubishi Electric Corp | Low-high temperature testing station |
| JPS57161556A (en) * | 1981-03-30 | 1982-10-05 | Fujitsu Ltd | Voltage measuring device using electron beam |
-
1984
- 1984-09-03 JP JP59183914A patent/JP2578744B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61221660A (en) | 1986-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |