JP2550493Y2 - Package for storing semiconductor elements - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as alumina ceramics as shown in FIG. Metal layer 12 made of high melting point metal powder such as
And a Kovar metal (Fe-Ni-Co alloy) brazed to the metallized metal layer 12 via a brazing material 14 such as silver braze in order to electrically connect the semiconductor element to an external electric circuit. The semiconductor element 16 is housed in an insulating container including the insulating base 11 and the lid 15, and the external device includes the external lead terminal 13 made of an aluminum or 42 alloy (Fe—Ni alloy) or the like. A semiconductor device is obtained by hermetically sealing.

In the conventional package for accommodating a semiconductor element, when the external lead terminals 13 are brazed to each of the metallized metal layers 12 provided on the insulating substrate 11, the workability of the brazing is facilitated. When a metal layer having excellent corrosion resistance is deposited on the outer surface of the lead terminal 13 by plating, in order to facilitate the workability of the deposition, and further, when transporting the package for housing the semiconductor element, the external lead terminal is used. In order to prevent the external lead terminals 13 from being deformed by an external force applied to the external lead terminals 13, one end of each of the external lead terminals 13 is commonly connected to a band-shaped metal member 17 as shown in FIG. Thereby, the workability of brazing the external lead terminal 13 to the insulating base 11 and attaching the plating metal layer to the outer surface of the external lead terminal 13 is greatly improved, and Deformation of Okutoki is adapted to be effectively prevented.

The external lead terminals 13 are formed by forming an ingot (a lump) of Kovar metal or the like into a thin plate by a conventionally known rolling method and punching the ingot into a small shape by a metal punching method. The metal member 17 connected to one end of the terminal 13 is also punched and formed simultaneously with the formation of the external lead terminal 13.

[0005]

[Selection that the invention tries to solve] However, recently,
In the package for housing a semiconductor element, the density of the semiconductor elements housed therein is increased and the integration density is increased. The number of external lead terminals used in the package is extremely large, and each external lead terminal has a green width of zero. With a thickness of 0.1 mm or less and a thickness of 0.06 mm or less, the mechanical strength has become extremely weak. Therefore, after the external lead terminal is brazed to the metallized metal layer provided on the insulating base, if the weight of the insulating base is applied to the external lead terminal, the external lead terminal is easily deformed. As a result, the external lead terminal is deformed. Cannot be accurately and reliably connected to an external predetermined electric circuit.

[0006]

According to the present invention, there is provided an insulating base having a rectangular shape, a mounting portion on which a semiconductor element is mounted on an upper surface, and a plurality of metallized metal layers to which electrodes of the semiconductor element are connected. A lead frame in which one end of each of a plurality of external lead terminals is commonly connected to each side of the inner periphery of the rectangular frame-shaped strip-shaped metal member. A semiconductor element housing package having an end brazed and fixed, wherein a thickness of an external lead terminal extended from each corner of the strip-shaped metal member to a dummy metallized metal layer provided at each corner of the insulating base. It is characterized in that a reinforcing metal piece having a thickness of three times or more is joined thereto.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 shows an embodiment of a lead frame used in the package for accommodating a semiconductor device according to the present invention. The lead frame indicated as a whole by a reference numeral 1 is a strip having a rectangular frame shape with a plurality of external lead terminals 2. Metal member 3.

The external lead terminal 2 functions to electrically connect the semiconductor element housed in the insulating container of the semiconductor element housing package to an external electric circuit, and one end of the external lead terminal constitutes the insulating container. It is soldered and fixed to the metallized metal layer to which the electrode of the semiconductor element provided on the upper surface is connected via a brazing material such as silver brazing.

The plurality of external lead terminals 2 are connected in common to the respective inner peripheral sides of a band-shaped metal member 3 whose other end forms a rectangular frame. The position of the external lead terminal 2 is restricted, and the workability at the time of brazing one end of the external lead terminal 2 to the metallized metal layer of the insulating base and the plating at the time of plating a metal excellent in corrosion resistance on the outer surface of the external lead terminal 2 by plating. Works to improve workability.

The connection of the external lead terminals 2 to the strip-shaped metal member 3 is such that the distance between adjacent external lead terminals 2 corresponds to the distance between the metallized metal layers provided on the insulating base.

The external lead terminal 2 and the strip-shaped metal member 3 are both made of Kovar metal (Fe-Nl-Co alloy).
And 42 alloys (Fe-Ni alloys), etc., and are formed at a time by forming an ingot (lumps) of Kovar metal or the like into a thin plate by a rolling process and punching it into a small shape by a metal punching process. You.

Further, one end of a reinforcing metal piece 4 is joined to each corner of the strip-shaped metal member 3 having a rectangular frame shape, and the other end of the reinforcing metal piece 4 is similar to the external lead terminal 2. Are brazed to a dummy metallized metal layer provided at each corner of the upper surface of the quadrangular insulating base via a brazing material such as silver brazing.

The reinforcing metal piece 4 has a thickness three times or more the thickness of the external lead terminal 2, and has a very high mechanical strength. Therefore, after the external lead terminals 2 and the reinforcing metal pieces 4 are brazed and fixed to the metallized metal layers and the dummy metallized metal layers of the insulating base, the weight of the insulating base is applied to the external lead terminals 2 and the reinforcing metal pieces 4. Also, since the reinforcing metal piece 4 has a large mechanical strength, it is not deformed, and accordingly, the external lead terminal 2 is not deformed.

If the thickness of the reinforcing metal piece 4 is less than three times the thickness of the external lead terminal 2, the reinforcing metal piece 4
When the mechanical strength of the external lead terminal 2 is reduced and the weight of the insulating substrate is applied, the external lead terminal 2 is easily deformed, and the deformation of the external lead terminal 2 cannot be effectively prevented. Therefore, the thickness of the reinforcing metal piece 4 is specified to be three times or more the thickness of the external lead terminal 2.

The reinforcing metal piece 4 is formed by welding a thick metal plate to each corner of the rectangular frame-shaped metal member 3 by spot welding or the like.
Attached to.

Next, a method for manufacturing the semiconductor device housing package of the present invention will be described with reference to FIG.

First, a rectangular insulating base 5 constituting an insulating container for housing a semiconductor element as shown in FIG.
A lead frame 1 is prepared in which a large number of external lead terminals 2 are joined to each side of the inner periphery of a band-shaped metal member 3 having a rectangular frame shape, and a reinforcing metal piece 4 is joined to each corner of the inner periphery.

The insulating base 5 has a mounting portion for mounting a semiconductor element in the center of the upper surface, and a plurality of metallized metal layers 6 are formed from the periphery of the semiconductor element mounting portion to each side of the upper surface. In addition, a dummy metallized metal layer 6a is formed on each corner of the upper surface. In a reducing atmosphere (in H ₂ -N ₂ gas), about 1400 to 16
It is formed by firing at a temperature of 00 ° C.

[0020] Incidentally, the green ceramic sheet is alumina (A1 ₂ 0 _3), silica (SiO ₂₎ to make a ceramic raw material powder in a suitable solvent, mud漿物solvent was added and mixed, such as, which is well known prior art It is formed by forming a sheet by a doctor blade method.

The metal paste is prepared by adding an appropriate solvent and a solvent to a high melting point metal powder such as tungsten, molybdenum, manganese, etc., and mixing the powder with a conventionally known thick film method such as screen printing on the surface of an unfired ceramic sheet. Is applied by printing.

Further, the lead frame 1 is made of a metal such as Kovar metal or 42 alloy, and an ingot (lumps) of Kovar metal or the like is formed into a rectangular frame by adopting a conventionally known rolling method and punching method. It is possible to obtain a structure in which one end of a large number of external lead terminals 2 is connected to each side of the inner periphery of the metal member 3. Thereafter, the band-shaped metal member 3 is reinforced at each corner of the inner periphery with a thick Kovar metal or the like. Metal piece 4
It is manufactured by attaching by welding or the like.

Next, the insulating base 5 having the metallized metal layer 6 and the dummy metallized metal layer 6a on the upper surface and the lead frame 1 having the external lead terminals 2 and the reinforcing metal pieces 4 are placed in a jig (not shown) made of carbon. And one end of the external lead terminal 2 is connected to the exposed portion of the metallized metal layer 6 provided on the insulating base 5.
Positioning is performed such that one end of the reinforcing metal piece 4 is placed on each a with a brazing material such as silver brazing interposed therebetween.

In this case, one end of each of the external lead terminals 2 is commonly connected to each of the inner peripheral sides of the band-shaped metal member 3 having a rectangular frame shape. 2 can be easily and simultaneously aligned with the metallized metal layer 6 provided on the insulating base 5.

Then, the insulating substrate 5 and the lead frame 1 aligned as described above are passed through a furnace heated to a temperature of about 900 ° C., and the brazing material is heated and melted to form an external lead terminal 2 and a reinforcing metal piece. 4 is brazed to the metallized metal layer 6 and the dummy metallized metal layer 6a.

Finally, a metal having excellent corrosion resistance such as nickel (Ni) or gold (Au) is deposited on the outer surface of the external lead terminal 2 brazed to the metallized metal layer 6 by electrolytic plating. As a result, a semiconductor element storage package as a product is completed.

In this case, since one end of each of the external lead terminals 2 is commonly connected to each inner peripheral side of the band-shaped metal member 3 having a rectangular frame shape, an electrode for electrolytic plating is connected to the band-shaped metal member 3. , A common electric field for plating can be applied to all the external lead terminals 2, and the workability of electrolytic plating becomes extremely easy.

Further, the completed package for housing a semiconductor element is formed by brazing the external lead terminals 2 to the metallized metal layer 6 of the insulating base 5 and, at the same time, strengthening the inner peripheral corners of the band-shaped metal member 3 having a rectangular ring shape. Since the metal piece 4 for use is brazed to the dummy metallized metal layer 6a of the insulating base 5, even if the weight of the insulating base 5 is applied to the external lead terminal 2 and the reinforcing metal piece 4, the weight is high in mechanical strength. As a result, the external lead terminal 2 is not deformed at all, and the external lead terminal 2 can be accurately and reliably connected to a predetermined external electric circuit.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. It may be formed of a metal different from the above.

[0030]

According to the package for housing a semiconductor element of the present invention, one end of each external lead terminal is commonly connected to each inner peripheral side of a band-shaped metal member having a rectangular frame shape, and its position is a band shape. When the external lead terminals are individually brazed to each of the metallized metal layers provided on the upper surface of the insulating base on which the semiconductor element is mounted because of being regulated by the metal member, the positions of the metallized metal layers and the external lead terminals are individually determined. The alignment can be performed at one time, and the workability of brazing the external lead terminals becomes extremely easy.

Since each external lead terminal is commonly connected to each side of the inner periphery of the strip-shaped metal member, when a metal having excellent corrosion resistance is layered on the outer surface of the external lead terminal by electrolytic plating, electrolytic plating is performed. By simply connecting an electrode for the plating to the strip-shaped metal member, an electric field for plating can be applied in common to all the external lead terminals, and the workability of depositing the corrosion-resistant metal becomes extremely easy.

Further, since each corner of the inner periphery of the band-shaped metal member having a rectangular frame shape and each corner of the upper surface of the insulating base are joined by a metal piece for reinforcement having high mechanical strength, the metal piece for reinforcement and the external lead terminal are provided. Even if the weight of the insulating base acts on the external lead terminal, the weight is absorbed by the reinforcing metal piece and does not cause deformation of the external lead terminal. As a result, the external lead terminal can be accurately and reliably applied to a predetermined external electric circuit. Can be connected.

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment of a lead frame used in a package for housing a semiconductor device according to the present invention.

FIG. 2 is a plan view showing an embodiment of a package for housing a semiconductor device according to the present invention;

FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.

FIG. 4 is a plan view of a lead frame used for the package for housing a semiconductor element shown in FIG. 3;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Lead frame 2 ... External lead terminal 3 ... Band-shaped metal member 4 ... Metal piece for reinforcement

Claims (1)

(57) [Scope of request for utility model registration] 1. An insulating substrate having a rectangular shape, a mounting portion on which a semiconductor element is mounted on an upper surface, and a plurality of metallized metal layers to which electrodes of the semiconductor element are connected, and a rectangular frame-shaped band-shaped metal member. A lead frame in which one end of a plurality of external lead terminals is commonly connected to each inner side of the
A semiconductor element housing package in which the other end of each external lead terminal is brazed and fixed to each metallized metal layer on the upper surface of the insulating substrate, wherein the dummy metallized metal layer provided at each corner of the insulating substrate is provided with the band-shaped metal. A package for housing a semiconductor element, wherein a reinforcing metal piece having a thickness of at least three times the thickness of an external lead terminal extending from each corner of a member is joined.