JP2021145120A - Electronic apparatus - Google Patents

Abstract

[Problem] To provide an electronic device with excellent reliability and circuit formability. [Solution] A semiconductor device 100 includes a substrate 101, a semiconductor element 103 mounted on the substrate 101, a first sealing layer 105 that seals the semiconductor element 103, and a second sealing layer 107 that covers the surface of the first sealing layer 105 and is composed of a cured product of a thermosetting resin composition for LDS, the thermosetting resin composition for LDS containing a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms a metal nucleus when irradiated with active energy rays. [Selected Figure] Figure 1

Description

The present invention relates to an electronic device.

As a technique relating to a resin material used for LASER DIRECT STRUCTURING (LDS), there is one described in Patent Document 1 (Japanese Unexamined Patent Publication No. 2015-134903). The document describes a fiber-reinforced resin material obtained by impregnating continuous fibers with a thermoplastic resin composition containing an LDS additive, and a polyamide resin is used as the thermoplastic resin.

JP-A-2015-134903

The present inventors have studied the use of microfabrication by LDS in the manufacture of electronic devices such as molded circuit components (MID).
The present invention provides an electronic device having excellent reliability and circuit formability.

According to the present invention
With electronic components
A first encapsulant that covers at least a part of the surface of the electronic component,
A second encapsulant that covers at least a portion of the surface of the electronic component and the first encapsulant.
Including
At least one of the first and second encapsulants is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Electronic devices are provided, including.

According to the present invention
With the board
The semiconductor element mounted on the substrate and
A first encapsulant for encapsulating the semiconductor element and
A second encapsulant that covers the surface of the first encapsulant and is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
Including
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Electronic devices, which are semiconductor devices, are provided.

According to the present invention
The process of preparing a structure in which the semiconductor element mounted on the substrate is sealed by the first sealing material, and
A step of forming a second encapsulant composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING) on the first encapsulant.
Including
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A method for manufacturing a semiconductor device including the above is provided.

According to the present invention
A step of forming a second encapsulant on the first encapsulant so as to cover at least a part of the surface of the first encapsulant.
A step of arranging the electronic component so that the first and second encapsulants cover at least a part of the electronic component, and a step of arranging the electronic component.
Including
At least one of the first or second encapsulant is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A method of manufacturing an electronic device is provided, including.

According to the present invention
The process of preparing a structure in which electronic components are provided on the first encapsulant, and
A step of forming a second encapsulant on the first encapsulant so as to cover at least a part of the electronic component.
Including
The first sealing material is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A method of manufacturing an electronic device is provided, including.

It should be noted that any combination of these configurations and the conversion of the expression of the present invention between methods, devices and the like are also effective as aspects of the present invention.
For example, according to the present invention, it is also possible to obtain a thermosetting resin composition for LDS and a cured product thereof used for the second sealing material of the semiconductor device in the present invention.

According to the present invention, it is possible to provide an electronic device having excellent reliability and circuit formability.

It is sectional drawing which shows the structural example of the semiconductor device in Embodiment. It is sectional drawing which shows the structural example of the semiconductor device in Embodiment. It is a perspective view which shows the structural example of the thin film inductor in embodiment. It is a schematic process sectional view which shows an example of the manufacturing method of a thin film inductor. It is a schematic process sectional view which shows an example of the manufacturing method of a thin film inductor.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, similar components are designated by a common reference numeral, and the description thereof will be omitted as appropriate. Further, the figure is a schematic view and does not necessarily match the actual dimensional ratio. Unless otherwise specified, "A to B" in the numerical range represents "A or more and B or less". The composition may contain each component alone or in combination of two or more.
In addition, the configurations of the following embodiments can be used in combination as appropriate.

(First Embodiment)
In this embodiment, an example in which the electronic device is a semiconductor device is shown.
FIG. 1A is a cross-sectional view showing a configuration example of the semiconductor device according to the present embodiment. FIG. 1B is a diagram showing a modified example of the semiconductor device 100 shown in FIG. 1A.
The electronic device (semiconductor device 100) includes an electronic component (semiconductor element 103), a first encapsulant (first encapsulating layer 105) that covers at least a part of the surface of the semiconductor element 103, and the semiconductor element 103 and a first. 1 Includes a second encapsulant (second encapsulating layer 107) that covers at least a portion of the surface of the encapsulating layer 105. At least one of the first sealing layer 105 and the second sealing layer 107 is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING). The thermosetting resin composition for LDS contains a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays.
Specifically, in FIGS. 1 (a) and 1 (b), the second sealing layer 107 is composed of a thermosetting resin composition for LDS. That is, the semiconductor device 100 includes a substrate 101, a semiconductor element 103 mounted on the substrate 101, a first sealing material (first sealing layer 105) for sealing the semiconductor element 103, and a first sealing layer. It covers the surface of 105 and includes a second encapsulant (second encapsulating layer 107) composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING). The thermosetting resin composition for LDS contains a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays.
Specific examples of the constituent components of the thermosetting resin composition for LDS will be described later in the sixth embodiment.

Specific examples of the semiconductor device 100 include molded circuit parts and various semiconductor packages.
Specific examples of molded circuit parts include those used for mobile electronic devices such as mobile phones, vehicles such as automobiles, and members of medical devices.
Specific examples of semiconductor packages include MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), and SON (Small Outline Non). -leaded Package), BGA (Ball Grid Array), LF-BGA (Lead Flame BGA), FCBGA (Flip Chip BGA), MAPBGA (Molded Array Process BGA), eWLB (Embedded Wafer-Level BGA), Fan-In type eWLB , Fan-Out type eWLB and other semiconductor packages; SIP (System In package) and the like.

Further, the semiconductor device 100 is, for example, a three-dimensional molded circuit component (Molded Interconnect Device: MID). The MID has three elements of a three-dimensional shape, the resin molded product, and a three-dimensional circuit. For example, the MID is a component in which a circuit is formed of a metal film on the surface of a resin molded product having a three-dimensional structure. Specifically, the MID can include a resin molded product having a three-dimensional structure and a three-dimensional circuit formed on the surface of the resin molded product. By using such an MID, the space can be effectively utilized, the number of parts can be reduced, and the size can be reduced.

The semiconductor element 103 is mounted on the substrate 101. Here, the semiconductor element 103 may be provided on the substrate 101 in the form of a semiconductor chip or a semiconductor package.
The board 101 is, for example, a wiring board such as an interposer, or a lead frame. FIG. 1B is a cross-sectional view showing a modified example of the semiconductor device 100. In FIG. 1B, the substrate is the lead frame 109.
The semiconductor element 103 is electrically connected to the substrate 101 by, for example, wire bonding or flip chip connection. For example, the conductor portion (not shown) provided on the semiconductor element 103 may be electrically connected to the conductor portion (lead frame 109 in FIG. 1B) provided on the substrate 101. The conductor portion is wiring or the like. The conductor portion is specifically made of a conductive material, for example, Cu or a Cu alloy.

In the semiconductor device 100, the sealing material includes a first sealing layer 105 and a second sealing layer 107, and these are laminated.
The first sealing layer 105 is composed of a cured product of a thermosetting resin composition. From the viewpoint of improving the dielectric properties of the entire encapsulant and improving the adhesion between the first encapsulating layer 105 and the conductive member (for example, the lead frame 109 in FIG. 1B), the first encapsulating layer The thermosetting resin composition used for 105 or the first sealing layer 105 preferably does not contain a non-conductive metal compound.

The thickness of the first sealing layer 105 can be adjusted according to, for example, the shape and size of the semiconductor element 103, and specifically, the thickness should be such that the semiconductor element 103 can be stably sealed. Can be done.

The coefficient of linear expansion of the first sealing layer 105 in the temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is preferably 6 ppm / ° C. from the viewpoint of improving the adhesion with the adjacent conductor portion. The above is more preferably 7 ppm / ° C. or higher, and even more preferably 9 ppm / ° C. or higher.
From the same viewpoint, the coefficient of linear expansion of the first sealing layer 105 in the temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is preferably 20 ppm / ° C. or less, which is more preferable. Is 18 ppm / ° C. or lower, more preferably 15 ppm / ° C. or lower.

Here, the linear expansion coefficient of the first sealing layer 105 and the second sealing layer 107 described later is measured using a TMA device (for example, TMA6100 manufactured by Hitachi High-Technologies Corporation) at a temperature rising rate of 10 ° C./min. , 30 ° C to 350 ° C.

The second sealing layer 107 is composed of a cured product of a thermosetting resin composition for LDS, which will be described later. Specific examples of the shape of the thermosetting resin composition for LDS include solid and liquid such as sheet-like and granular (for example, granular and tablet-like). In the present embodiment, a case where a sheet-shaped thermosetting resin composition for LDS is used will be described below as an example.
In the present embodiment, the second sealing layer 107 is specifically a cured product of a sheet-shaped thermosetting resin composition for LDS.
The second sealing layer 107 is provided in contact with the first sealing layer 105 and covers it. The second sealing layer 107 may cover at least a part of the first sealing layer 105, and may cover at least a part of the upper surface and the side surface of the first sealing layer 105, for example.
In the semiconductor device 100, the second sealing layer 107 seals the entire surface of the first sealing layer 105 on the upper part of the substrate 101. That is, the second sealing layer 107 covers the entire surface of the first sealing layer 105 at the upper part of the substrate 101. Further, the second sealing layer 107 is in contact with the surface of the substrate 101 at the end. With such a configuration, the degree of freedom in forming a circuit on the outside of the sealing material can be further increased.

The thickness of the second sealing layer 107 is preferably 30 μm or more, more preferably 40 μm or more, still more preferably 50 μm or more, still more preferably 80 μm or more, from the viewpoint of enhancing the stability of circuit formation.
Further, from the viewpoint of solidifying the entire semiconductor device 100 and improving the dielectric properties of the entire encapsulant, the thickness of the second encapsulating layer 107 is preferably 500 μm or less, more preferably 400 μm. Below, it is more preferably 300 μm or less, even more preferably 200 μm or less, and even more preferably 150 μm or less.

The coefficient of linear expansion of the second sealing layer 107 in the temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is preferably 6 ppm from the viewpoint of improving the adhesion with the first sealing layer 105. / ° C. or higher, more preferably 7 ppm / ° C. or higher, still more preferably 8 ppm / ° C. or higher.
From the same viewpoint, the coefficient of linear expansion of the second sealing layer 107 in the temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is preferably 20 ppm / ° C. or less, which is more preferable. Is 18 ppm / ° C. or lower, more preferably 15 ppm / ° C. or lower.

Further, from the viewpoint of improving the adhesion between the first sealing layer 105 and the second sealing layer 107, the linear expansion coefficient of the first sealing layer 105 in the temperature region lower than the glass transition temperature and the second sealing layer 107 The difference from the coefficient of linear expansion in the temperature region below the glass transition temperature is preferably 5 ppm / ° C. or less, more preferably 3 ppm / ° C. or less, and further preferably 1 ppm / ° C. or less. Further, the difference in coefficient of linear expansion may be, for example, more than 0 ppm / ° C., preferably 0 ppm / ° C.
Here, the linear expansion coefficients of the first sealing layer 105 and the second sealing layer 107 are adjusted, for example, by adjusting the content of the inorganic filler in the thermosetting resin composition used for these sealing layers. can do.

Further, the glass transition temperature (Tg) of the first sealing layer 105 and the second sealing layer 107 is preferably 100 ° C. or higher, more preferably 100 ° C. or higher, from the viewpoint of improving the heat resistance reliability of the semiconductor device 100. Is 120 ° C. or higher, preferably 250 ° C. or lower, and more preferably 220 ° C. or lower.

Next, a method of manufacturing the semiconductor device 100 will be described.
Specifically, the method for manufacturing the electronic device (semiconductor device 100) includes a step of preparing a structure in which the electronic component (semiconductor element 103) is sealed by the first sealing layer 105, and a first sealing layer 105. A step of forming a second sealing layer 107 on the surface is included, and at least one of the first sealing layer 105 and the second sealing layer 107 is composed of a cured product of a thermosetting resin composition for LDS. NS.
Hereinafter, a case where the second sealing layer 107 is composed of a cured product of a thermosetting resin composition for LDS will be described in more detail. At this time, the manufacturing method of the semiconductor device 100 includes, for example, the following steps 1 and 2.
(Step 1) Step of preparing a structure in which the semiconductor element 103 mounted on the substrate 101 is sealed by the first sealing layer 105 (Step 2) Thermosetting for LDS on the first sealing layer 105. Step of forming the second sealing layer 107 composed of the cured product of the resin composition

In step 1, for example, the semiconductor element 103 is mounted on the substrate 101 according to a conventional method, and the semiconductor element 103 is sealed by the first sealing layer 105. For the formation of the first sealing layer 105, compression molding or transfer molding is preferably used from the viewpoint of improving production stability.

In step 2, for example, the molding method of the second sealing layer 107 can be selected according to the shape of the thermosetting resin composition for LDS.
In the present embodiment, specifically, the entire first sealing layer 105 may be sealed using a sheet-shaped thermosetting resin composition for LDS.

At this time, for the formation of the second sealing layer 107, for example, compression molding or lamination molding can be used.
In the case of compression molding, for example, the structure obtained in step 1 is fixed to one of the upper mold and the lower mold of the compression molding die by a fixing means such as a clamp or suction. In the following, a case where the formation surface of the first sealing layer 105 in the structure is fixed to the upper mold of the compression molding die so as to face the resin material supply container will be described as an example.

Next, the sheet-shaped thermosetting resin composition for LDS is arranged in the lower mold cavity of the mold so as to be in a position corresponding to the structure fixed to the upper mold of the mold. Next, by narrowing the distance between the upper mold and the lower mold of the mold under reduced pressure, the sheet-shaped thermosetting resin composition for LDS is heated to a predetermined temperature in the lower mold cavity and becomes a molten state. Then, by joining the upper mold and the lower mold of the mold, the thermosetting resin composition for LDS in a molten state is pressed against the structure fixed to the upper mold. By doing so, the structure can be filled with the thermosetting resin composition for LDS, and the surface of the structure can be covered with the thermosetting resin composition for LDS in a molten state. Then, the thermosetting resin composition for LDS is cured over a predetermined time while maintaining the state in which the upper mold and the lower mold of the mold are bonded. By doing so, the second sealing layer 107 that seals the first sealing layer 105 can be formed.

Here, when performing compression molding, it is preferable to perform resin sealing while reducing the pressure inside the mold, and it is more preferable to perform resin sealing under vacuum conditions. By doing so, the first sealing layer 105 can be embedded in the second sealing layer 107 without leaving a filled portion.

The molding temperature in compression molding is preferably 50 to 200 ° C, more preferably 80 to 180 ° C. The molding pressure is preferably 0.5 to 12 MPa, more preferably 1 to 10 MPa. The molding time is preferably 30 seconds to 15 minutes, more preferably 1 to 10 minutes. By setting the molding temperature, pressure, and time within the above ranges, it is possible to prevent the occurrence of a portion where the sealed material in the molten state is not filled.

The post-cure temperature to be carried out after sealing and molding the structure obtained in step 1 using the sheet-shaped thermosetting resin composition for LDS by a compression molding method is preferably 150 to 200 ° C. More preferably, it is 165 to 185 ° C. The post-cure time is preferably 1 hour to 5 hours, more preferably 2 hours to 4 hours.

Further, in the case of lamination molding, first, a sheet-shaped thermosetting resin composition for LDS prepared in a roll shape is attached to the unwinding device of the vacuum pressure type laminator, and is connected to the winding device. Next, the structure obtained in step 1 is conveyed to the diaphragm (elastic film) type laminator section. Then, when the pressing is started under reduced pressure, the sheet-shaped thermosetting resin composition for LDS is heated to a predetermined temperature and becomes a molten state. Then, the molten sheet-shaped thermosetting resin composition for LDS is pressed against the first sealing layer 105 forming surface of the structure by pressing through the diaphragm to form the second sealing layer. It can be filled with 107, and the surface of the first sealing layer 105 can be covered with the second sealing layer 107 in a molten state. Then, the second sealing layer 107 is cured over a predetermined time. By doing so, the first sealing layer 105 can be sealed.
If the second sealing layer 107 is required to have a flatness with higher precision, it is molded by adding a pressing process with a flat pressing device adjusted with high precision after pressing with a diaphragm type laminator. You can also do it.

When performing the above-mentioned lamination molding, the molding temperature by the diaphragm (elastic film) type laminator portion is preferably 50 to 120 ° C, more preferably 80 to 110 ° C. The molding pressure by the diaphragm (elastic film) type laminator portion is preferably 0.5 to 1 MPa, more preferably 0.6 to 0.9 MPa. The molding time by the diaphragm (elastic film) type laminator portion is preferably 30 seconds to 5 minutes, more preferably 1 to 3 minutes. By setting the molding temperature, pressure, and time of the diaphragm (elastic film) type laminator portion within the above ranges, it is possible to prevent a portion where the melted thermosetting resin composition for LDS is not filled.

When performing the above-mentioned lamination molding, the pressing temperature by the flat pressing apparatus is preferably 80 to 130 ° C., more preferably 90 to 120 ° C. The molding pressure by the flat press device is preferably 0.5 to 2 MPa, more preferably 0.8 to 1.5 MPa. The molding time by the flat press device is preferably 30 seconds to 5 minutes, more preferably 1 to 3 minutes. By setting the pressing temperature, molding pressure, and time of the flat pressing apparatus within the above ranges, it is possible to prevent a portion where the melted thermosetting resin composition for LDS is not filled.

Further, the post-cure temperature carried out after sealing and molding the first sealing layer 105 by a lamination molding method using a sheet-shaped thermosetting resin composition for LDS is preferably 150 to 200 ° C., more preferably. It is 165 to 185 ° C. The post-cure time is preferably 1 hour to 5 hours, more preferably 2 hours to 4 hours.

Further, after the step 2, for example, the following steps 3 and 4 may be performed.
(Step 3) Step of irradiating a specific portion of the surface of the second sealing layer 107 with active energy rays (Step 4) Metal in a region (recess) irradiated with active energy rays on the surface of the second sealing layer 107. A step of forming a conductor layer such as a wiring layer by selectively forming a layer Further, a surface cleaning step may be added after the step 3 and before the step 4.

In step 3, a specific portion of the surface of the second sealing layer 107 is selectively irradiated with an active energy ray such as a laser. By laser irradiation, for example, a recess can be formed in the laser irradiation portion of the second sealing layer 107.
The laser can be appropriately selected from known lasers such as a YAG laser, an excimer laser, and an electromagnetic ray, and a YGA laser is preferable. Further, the wavelength of the laser is not defined, but is, for example, 200 nm or more and 2000 nm or less, and preferably 240 nm or more and 1100 nm or less from the viewpoint of thinning. Among these, preferably 248 nm, 308 nm, 355 nm, 515 nm, 532 nm, 1064 nm or 1060 nm can be mentioned as the laser.

In step 4, a metal film is selectively formed in a predetermined region of the second sealing layer 107 by LDS. In LDS, specifically, the surface of the second sealing layer 107 containing the LDS additive is irradiated with active energy rays to generate metal nuclei, and the metal nuclei are used as seeds for plating such as electroless plating. By the treatment, a plating pattern is formed in the energy ray irradiation region. Conductive members such as wirings and circuits can be formed based on this plating pattern. Hereinafter, a more specific description will be given.

In step 4, a conductor layer such as a wiring layer is selectively formed in the laser irradiation portion on the surface of the second sealing layer 107, specifically, in the recess. The conductor layer is specifically composed of a plating film.
Further, the step 4 specifically includes a step of applying metal to the recess and a step of growing a metal plating layer in the recess.

As the plating treatment, either electrolytic plating or electroless plating may be used. A circuit (plating layer) can be formed by subjecting the region irradiated with the laser in step 2 to a plating treatment. As the plating solution, a known plating solution can be widely used, and a plating solution in which copper, nickel, gold, silver, and palladium are mixed as metal components may be used.

Through the above steps, the semiconductor device 100 is obtained.
In the present embodiment, since the sealing material of the semiconductor element 103 has a core-shell structure of the first sealing layer 105 and the second sealing layer 107, the semiconductor device 100 having excellent reliability and circuit formability can be obtained. Can be done. For example, different resin compositions are used for the first sealing layer 105 and the second sealing layer 107, and the resin composition used for the first sealing layer 105 preferably does not contain a non-conductive metal compound. By doing so, the adhesion between the semiconductor element 103 or the conductor portion and the first sealing layer 105 can be made excellent, and the moldability and dielectric properties of the entire sealing material can be made more preferable. Further, since the second sealing layer 107 is composed of a cured product of the thermosetting resin composition for LDS, for example, in steps 3 and 4 described above, wiring can be stably formed by LDS processing. Therefore, it is also possible to provide the semiconductor device 100 with a finer or more complicated wiring structure.

In the following embodiment, the points different from the first embodiment will be mainly described.

(Second Embodiment)
FIG. 2A is a cross-sectional view showing an example of the configuration of the semiconductor device according to the present embodiment. FIG. 2B is a diagram showing a modified example of the semiconductor device 110 shown in FIG. 2A.
In FIGS. 2 (a) and 2 (b), the basic configuration of the semiconductor device 110 is the same as that of the semiconductor device 100 shown in FIGS. 1 (a) and 1 (b), respectively, but the second encapsulant. The difference is that the second sealing layer 111 is provided instead of the second sealing layer 107.
In the present embodiment, the second sealing layer 111 is specifically a cured product of a liquid thermosetting resin composition for LDS.
The second sealing layer 111 is provided in contact with the upper part of the first sealing layer 105 and covers the entire upper surface of the first sealing layer 105.

The thickness of the second sealing layer 111 can be, for example, about the thickness of the second sealing layer 107 described in the first embodiment from the same viewpoint as that of the first embodiment.
The linear expansion coefficient in the temperature region below the glass transition temperature, the linear expansion coefficient in the temperature region below the glass transition temperature of the first sealing layer 105, and the linear expansion coefficient measured by thermomechanical analysis (TMA) of the second sealing layer 111. The difference from the linear expansion coefficient in the temperature region of the 2 sealing layer 111 below the glass transition temperature and the glass transition temperature of the 2nd sealing layer 111 are also large, for example, as described above in the first embodiment. Can be.

The semiconductor device 110 can also be manufactured according to, for example, the manufacturing method of the semiconductor device 100 described in the first embodiment, and more specifically, the manufacturing method including the steps 1 and 2 described above. Can be done.

Step 1 can be, for example, the same method as in the first embodiment.
In step 2, for example, a liquid thermosetting resin composition for LDS can be applied to the upper surface of the first sealing layer 105 to form a film, which can be cured to form the second sealing layer 111. ..
Specific examples of the method for applying the thermosetting resin composition for LDS include printing such as offset printing and screen printing; jet dispensing such as air discharge and mechanical depens, and printing is preferable.
It is also preferable to obtain the second sealing layer 111 by compression molding.

Also in the semiconductor device 110, since the sealing material of the semiconductor element 103 has a core-shell structure of the first sealing layer 105 and the second sealing layer 111, the same effect as that of the first embodiment can be obtained. Further, according to the present embodiment, for example, it is possible to suitably suppress the warp of the sealing material.

In the above, the example in which the semiconductor element 103 is embedded in the first sealing layer 105 has been given, but the first sealing layer 105 and the second sealing layer 111 are each at least one on the surface of the electronic component. It suffices to cover the part. A part of the electronic component may be exposed on at least one surface of the first sealing layer 105 and the second sealing layer 111.
Further, in the above, the example in which the second sealing layer 111 is provided in contact with the surface of the first sealing layer 105 has been given, but between the first sealing layer 105 and the second sealing layer 111. May be provided with one or more intervening layers.

Further, in the above description, the case where the electronic device is a semiconductor device has been described as an example, but the electronic device is not limited to the semiconductor device. Other specific examples of electronic devices include inductors such as thin film inductors.
Hereinafter, a thin film inductor will be described as an example. In the following embodiments, for the formation of the MID circuit, for example, at least a part of the method described in the first embodiment, more specifically, at least a part of the steps 3 and 4 can be used. ..

(Third Embodiment)
FIG. 3 is a perspective view showing an example of the configuration of the thin film inductor in the present embodiment. The thin film inductor 10 shown in FIG. 3 includes a soft magnetic thin film 12 (38) made of a resin molding material, and an MID (Molded Interconnect Device) circuit 14 on the upper surface thereof.

4 (a) to 4 (d) are cross-sectional views showing an example of a manufacturing process of the thin film inductor 10. The thin film inductor 10 can be manufactured, for example, by a method including the following steps.
(Step 11) A step (step 11) of forming a second sealing material (insulating layer 13) on the first sealing material (soft magnetic thin film 12) so as to cover at least a part of the surface of the soft magnetic thin film 12. 12) A step of arranging the copper layer 16 so that the soft magnetic thin film 12 and the insulating layer 13 cover at least a part of the electronic component (copper layer 16) In the present embodiment, for example, the soft magnetic thin film 12 is thermoset for LDS. It may be composed of a cured product of the sex resin composition. At this time, the thermosetting resin composition for LDS can be configured to contain, for example, a non-conductive metal compound that forms a metal core by irradiation with active energy rays, which will be described later in the fifth embodiment.

In step 11, first, the soft magnetic thin film 12 is formed by transfer molding or compression molding of the resin molding material (FIG. 4A). The film thickness of the soft magnetic thin film 12 is about 200 μm.

Here, as a resin molding material for obtaining the soft magnetic thin film 12, a known resin composition for inductor molding can be used. The resin composition for forming an inductor includes, for example, a thermosetting resin such as an epoxy resin and a magnetic powder.
Further, from the viewpoint that the soft magnetic thin film 12 has a high saturation magnetic flux density and is a magnetic material having excellent mechanical strength such as bending strength, the resin composition for inductor molding is preferably an epoxy resin, a curing agent, and the following. It contains a compound represented by the general formula (1) and soft magnetic particles.

(In the above general formula (1), R ¹ has a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and 1 to 10 carbon atoms. It represents an alkenyl group, an alkynyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, and R ² is an alkylene group having 1 to 10 carbon atoms and an alkenylene having 1 to 10 carbon atoms. A group, an alkylylene group having 1 to 10 carbon atoms is shown.
A each independently represents an alkoxy group having 1 to 3 carbon atoms or an alkyl group having 1 to 3 carbon atoms, and at least one A is an alkoxy group having 1 to 3 carbon atoms. )

As the epoxy resin, the curing agent, and the soft magnetic particles, for example, known resin compositions for inductor molding can be used.
Further, as specific examples of the compound represented by the general formula (1), N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane (KBM-602, manufactured by Shin-Etsu Chemical Co., Ltd.), N-2- (amino). Ethyl) -3-aminopropyltrimethoxysilane (KBM-603, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-Aminopropyltrimethoxysilane (KBM-903, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-aminopropyltriethoxysilane (KBE) -903, manufactured by Shin-Etsu Chemical Co., Ltd.), 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine (KBE-9103P, manufactured by Shin-Etsu Chemical Co., Ltd.), N-phenyl-3-aminopropyl Trimethoxysilane (KBM-573, manufactured by Shin-Etsu Chemical Co., Ltd./CF-4083: manufactured by Toray Dowcorning Co., Ltd.) and the like can be mentioned.

Returning to the description of the manufacturing method, next, the insulating layer 13 is formed on the upper surface of the soft magnetic thin film 12 (FIG. 4 (b)). The film thickness of the insulating layer 13 is about 200 μm. The insulating layer 13 can be formed from a conventionally known material, and is formed by a spray method, a coating method, or the like.

Then, a specific portion of the soft magnetic thin film 12 is selectively irradiated with an active energy ray such as a laser to form a recess (opening 15) extending from the soft magnetic thin film 12 to the insulating layer 13 (FIG. 4 (c)).
Further, after forming the soft magnetic thin film 12, a circuit pattern is formed by selectively irradiating a specific portion of the soft magnetic thin film 12 with active energy rays, and then an insulating layer is formed on the entire upper surface of the soft magnetic thin film 12. It is also possible to selectively irradiate the pattern portion with active energy rays again to form an insulating layer on the inner wall of the opening 15.

Next, a plating process is performed to form a copper layer 16 in the opening 15 to obtain a thin film inductor 10 having a MID circuit 14 on the soft magnetic thin film 12 (FIG. 4 (d)). The thin film inductor 10 may have the structure shown in FIG. 4 (d1).

(Fourth Embodiment)
The present embodiment relates to another method for manufacturing the thin film inductor 10 (FIG. 3) described in the third embodiment. 5 (a) to 5 (d) are cross-sectional views showing an example of a manufacturing process of the thin film inductor 10. The thin film inductor 10 can also be manufactured by a method including, for example, the following steps.
(Step 21) Step of preparing a structure in which an electronic component (copper layer 36) is provided on the first sealing material (MID film 32) (Step 22) At least one of the copper layers 36 on the MID film 32. Step of forming a second sealing material (soft magnetic layer (thin film) 38) so as to cover the portion In the present embodiment, specifically, the MID film 32 is a cured product of a thermosetting resin composition for LDS. Consists of.

First, the thermosetting resin composition for LDS is applied and dried with a die coater to form the MID film 32 (FIG. 5A). The film thickness of the MID film 32 is about 200 μm. The thermosetting resin composition for LDS can have, for example, the configuration described later in the fifth embodiment.

A specific portion of the MID film 32 is selectively irradiated with an active energy ray such as a laser to form an opening 34 (FIG. 5 (b)).

Then, a plating process is performed to form a copper layer 36 in the opening 34, and a MID circuit 14 is created in the MID film 32 (FIG. 5 (c)). After the step, an insulating layer can be formed on the surface of the copper layer 36.

Next, a soft magnetic layer (thin film) 38 is formed on the MID film 32 and the copper layer 36 by the above-mentioned transfer molding or compression molding, and these are sealed, and the soft magnetic layer (thin film) 38 is provided with the MID circuit 14. A thin film inductor 10 is obtained (FIG. 5 (d)). Examples of the material of the soft magnetic layer (thin film) 38 include the material of the soft magnetic thin film 12 in the third embodiment.
The thin film inductor 10 may have the structure shown in FIG. 5 (d1).

(Fifth Embodiment)
In this embodiment, the thermosetting resin composition used for the first sealing layer 105 and the second sealing layer in each embodiment will be described.

(First sealing layer)
The thermosetting resin composition used for the first sealing layer 105 can be specifically a resin composition for semiconductor encapsulation, and more specifically, a thermosetting resin and an inorganic filler. And can be included.

Further, as the thermosetting resin composition used for the first sealing layer 105, for example, those used as a semiconductor encapsulant can be widely used. The thermosetting resin composition used for the first sealing layer 105 is composed of, for example, a component obtained by removing a non-conductive metal compound from the thermosetting resin composition used for the second sealing layer, which will be described later. The composition can also be used.

Further, when the first sealing layer 105 is a cured product of the thermosetting resin composition for LDS, the configuration of the thermosetting resin composition used for the second sealing layer described later can also be adopted.

(Second sealing layer)
The thermosetting resin composition used for the second sealing layer is a thermosetting resin composition for LDS used for laser direct structuring (LASER DIRECT STRUCTURING: LDS). LDS is one of the methods for manufacturing MID. In LDS, specifically, the surface of a resin molded product containing an LDS additive is irradiated with active energy rays to generate metal nuclei, and the metal nuclei are used as seeds by plating treatment such as electroless plating. A plating pattern is formed in the energy ray irradiation region. Conductive members such as wirings and circuits can be formed based on this plating pattern.

In the present embodiment, the thermosetting resin composition for LDS (hereinafter, also simply referred to as “thermosetting resin composition”) is a metal nucleus obtained by irradiation with a thermosetting resin, an inorganic filler, and active energy rays. Includes non-conductive metal compounds that form.
The constituent components and the composition of the thermosetting resin composition can be selected, for example, according to the shape of the second sealing layer and the method of application on the first sealing layer 105.

Further, the shape of the thermosetting resin composition can also be selected according to, for example, the shape of the second sealing layer and the method of application on the first sealing layer 105. Examples of the shape of the thermosetting resin composition include a solid state such as a granular shape and a sheet shape; and a liquid state.
When the method for forming the second sealing layer is transfer molding, for example, a granular or sheet-shaped thermosetting resin composition can be used.
When the method for forming the second sealing layer is compression molding, for example, a granular, sheet-like or liquid thermosetting resin composition can be used.

The configuration of the second sealing layer can also be applied to, for example, the MID film 32 in the fourth embodiment.

When the second sealing layer is a cured product of a resin composition that does not contain a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays, the first sealing layer 105 described above is used as such a resin composition. It is also possible to adopt the composition of the thermosetting resin composition used in.

(Thermosetting resin)
Examples of the thermosetting resin include unsaturated polyester resins such as epoxy resins, bismaleimide resins, benzoxazine resins, phenol resins, urea (urea) resins and melamine resins, polyurethane resins, diallyl phthalate resins, silicone resins and cyanate resins. One or more selected from the group consisting of a polyimide resin, a polyamideimide resin, and a benzocyclobutene resin can be mentioned. Further, the thermosetting resin can contain a resin curing agent such as a phenol resin curing agent described later.
From the viewpoint of improving curability, storage stability, heat resistance, moisture resistance, and chemical resistance, the thermosetting resin preferably contains an epoxy resin, and more preferably an epoxy resin.

As the epoxy resin, a monomer, an oligomer, or a polymer having two or more epoxy groups in one molecule can be used in general, and the molecular weight and molecular structure thereof are not limited.
The epoxy resin is, for example, a biphenyl type epoxy resin; a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol type epoxy resin such as a tetramethyl bisphenol F type epoxy resin; a stillben type epoxy resin; a phenol novolac type epoxy resin, a cresol novolac type. Novorak type epoxy resin such as epoxy resin; Polyfunctional epoxy resin such as Triphenol methane type epoxy resin exemplified by alkyl modified triphenol methane type epoxy resin; Phenol aralkyl type epoxy resin having phenylene skeleton , Phenol aralkyl type epoxy resin having a phenylene skeleton, phenol aralkyl type epoxy resin having a biphenylene skeleton, phenol aralkyl type epoxy resin such as naphthol aralkyl type epoxy resin having a biphenylene skeleton; dihydroxynaphthalene type epoxy resin, dihydroxynaphthalene dimer Naftor-type epoxy resin such as epoxy resin obtained by glycidyl etherification; Triazine nucleus-containing epoxy resin such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; Arihashi cyclic hydrocarbon such as dicyclopentadiene-modified phenol-type epoxy resin Includes one or more selected from the group consisting of compound modified phenolic epoxy resins.
Of these, biphenyl aralkyl type epoxy is used from the viewpoint of suppressing warpage of the molded product obtained by curing the thermosetting resin composition and improving the balance of various properties such as fluidity, filling property, heat resistance, and moisture resistance. One or more selected from the group consisting of a resin, an orthocresol novolac type epoxy resin, a polybiphenylene skeleton-containing phenol aralkyl type epoxy resin, and a bisphenol F type epoxy resin is preferably used.

The content of the thermosetting resin in the thermosetting resin composition is adjusted with respect to the entire thermosetting resin composition from the viewpoint of improving the fluidity at the time of molding and improving the filling property and the molding stability. It is preferably 1% by mass or more, more preferably 2% by mass or more, and further preferably 2.5% by mass or more.
On the other hand, from the viewpoint of improving moisture resistance reliability and reflow resistance and suppressing warpage of the molded product, the content of the thermosetting resin is preferably 15% by mass with respect to the entire thermosetting resin composition. % Or less, more preferably 14% by mass or less, still more preferably 13% by mass or less.
Here, in the present embodiment, the content of the thermosetting resin composition as a whole means the entire solid content of the thermosetting resin composition excluding the solvent when the thermosetting resin composition contains a solvent. Refers to the content of. The solid content of the thermosetting resin composition refers to the non-volatile content in the thermosetting resin composition, and refers to the balance excluding volatile components such as water and solvent.

(Hardener)
The thermosetting resin composition may contain a curing agent. The curing agent can be roughly classified into three types, for example, a polyaddition type curing agent, a catalytic type curing agent, and a condensation type curing agent. These may be used alone or in combination of two or more.

Heavy addition hardeners include, for example, aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), metaxylerylene diamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), In addition to aromatic polyamines such as diaminodiphenylsulfone (DDS), polyamine compounds containing dicyandiamide (DICY), organic acid dihydrazide and the like; alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA). Acid anhydrides containing anhydrides, aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA); phenolic resin curing agents; polysulfide, thioesters, thioethers. Polymercaptan compounds such as; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; one or more selected from the group consisting of organic acids such as carboxylic acid-containing polyester resins.

Among these, the phenol resin curing agent is, for example, a resol type phenol resin; a novolak type phenol resin such as a phenol novolac resin, a cresol novolak resin, or a bisphenol novolak; a polyfunctional phenol resin such as a polyvinyl phenol or a triphenol methane type phenol resin; Modified phenol resins such as terpen-modified phenol resins and dicyclopentadiene-modified phenol resins; phenol aralkyl resins having at least one of a phenylene skeleton and a biphenylene skeletron, and phenol aralkyl-type phenol resins such as naphthol aralkyl resins having at least one of a phenylene and biphenylene skeleton. Includes one or more selected from the group consisting of bisphenol compounds such as bisphenol A and bisphenol F. Among these, from the viewpoint of suppressing warpage of the molded product, it is more preferable to contain a novolak type phenol resin, a polyfunctional phenol resin and a phenol aralkyl type phenol resin. Further, a phenol novolac resin, a phenol aralkyl resin having a biphenylene skeleton, and a formaldehyde-modified triphenylmethane-type phenol resin can also be preferably used.

The catalytic curing agent is, for example, one or more selected from the group consisting of imidazole compounds such as 2-methylimidazole, 2-ethyl-4-methylimidazole (EMI24); _{Lewis acids such as BF 3 complex.} including.

The condensation type curing agent contains, for example, one or more selected from the group consisting of a urea resin such as a methylol group-containing urea resin; and a melamine resin such as a methylol group-containing melamine resin.

When the thermosetting resin composition is liquid, from the viewpoint of improving heat resistance, the thermosetting resin composition preferably contains one or more curing agents selected from the group consisting of polyamine compounds and acid anhydrides. More preferably, it contains one or more compounds selected from acid anhydrides.
Further, when the thermosetting resin composition is in the form of granules or sheets, it contains a phenol resin curing agent from the viewpoint of improving the balance of flame resistance, moisture resistance, electrical properties, curability, storage stability and the like. Is more preferable.

The content of the curing agent in the thermosetting resin composition is higher than that of the entire thermosetting resin composition from the viewpoint of realizing excellent fluidity at the time of molding and improving the filling property and moldability. It is preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably 2% by mass or more, still more preferably 3% by mass or more.
On the other hand, the content of the curing agent is preferable with respect to the entire thermosetting resin composition from the viewpoint of improving the moisture resistance reliability and reflow resistance of the electronic component and from the viewpoint of suppressing the warp of the obtained molded product. Is 9% by mass or less, more preferably 8% by mass or less, still more preferably 7% by mass or less.

(Inorganic filler)
The inorganic filler consists of, for example, molten silica such as molten crushed silica and fused spherical silica; silica (silicon dioxide) such as crystalline silica and amorphous silica; alumina; aluminum hydroxide; silicon nitride; and aluminum nitride. Includes one or more selected materials. From the viewpoint of favoring the mechanical properties or thermal properties of the cured product of the thermosetting resin composition, the inorganic filler preferably contains silica such as melt-crushed silica, melt-spherical silica, and crystalline silica, and more preferably silica. Is.

D ₅₀ particle size of the inorganic filler, from the viewpoint of a favorable fluidity, and for example 1μm or more, preferably 5μm or more, more preferably 10μm or more, more preferably 12μm or more, even more preferably 15μm That is all.
On the other hand, from the viewpoint of reducing the plated wiring width after the laser processing, d ₅₀ particle size of the inorganic filler is preferably not 40μm or less, more preferably 30μm or less, more preferably 27μm or less, even more preferably 25μm or less Is.

Here, the particle size distribution of the inorganic filler can be measured on a volume basis using a commercially available laser diffraction type particle size distribution measuring device (for example, SALD-7000 manufactured by Shimadzu Corporation).

The content of the inorganic filler in the thermosetting resin composition is 40% by mass or more, preferably 50% by mass or more, based on the entire thermosetting resin composition, from the viewpoint of enhancing dimensional stability. It is more preferably 60% by mass or more, still more preferably 65% by mass or more, and even more preferably 70% by mass or more.
On the other hand, from the viewpoint of making the viscosity and fluidity preferable, the content of the inorganic filler is 85% by mass or less, preferably 80% by mass or less, based on the entire thermosetting resin composition. It is preferably 78% by mass or less, more preferably 75% by mass or less, and even more preferably 73% by mass or less.

(Non-conductive metal compound that forms metal nuclei by irradiation with active energy rays)
A non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays (hereinafter, also simply referred to as “non-conductive metal compound”) is a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays. be. Such compounds act as LDS additives. The non-conductive metal compound is not limited as long as it can form a metal nucleus by irradiation with active energy rays. Although the detailed mechanism is not clear, such non-conductive metal compounds are activated (for example, reduced) when irradiated with active energy rays such as a YAG laser having an absorbable wavelength region. ), It is considered that a metal nucleus capable of metal plating is generated. Then, when the surface of the cured product of the thermosetting resin composition in which the non-conductive metal compound is dispersed is irradiated with active energy rays, a seed region having a metal core capable of metal plating is formed on the irradiated surface. Will be done. By utilizing the obtained seed region, it becomes possible to form a plating pattern such as a circuit on the surface of the cured product of the thermosetting resin composition.

The non-conductive metal compound is selected from, for example, (i) a spinel-type metal oxide, and (ii) groups 3 to 12 of the periodic table, and two or more transition metals having the group adjacent to each other. Includes one or more selected from the group consisting of elemental metal oxides and (iii) tin-containing oxides.

In the above (i), the spinel type structure is _{one of the typical crystal structure types found in compound AB 2} O ₄ type compounds (A and B are metal elements). The spinel structure may be either a forward spinel structure or an inverted spinel structure (B (AB) O ₄ ) in which A and B are partially exchanged, but the forward spinel structure can be used more preferably. In this case, A of the forward spinel structure may be copper.

As the metal atom constituting the spinel-type metal oxide, for example, copper or chromium can be used. That is, the non-conductive metal compound can contain a spinel-type metal oxide containing copper or chromium. For example, copper can be used as the metal atom from the viewpoint of enhancing the adhesion to the copper plating pattern.

In addition to copper and chromium, it contains trace amounts of metal atoms such as antimony, tin, lead, indium, iron, cobalt, nickel, zinc, cadmium, silver, bismuth, arsenic, manganese, magnesium, and calcium. May be. These trace metal atoms may exist as oxides. Further, the content of trace metal atoms can be 0.001% by mass or less with respect to the total amount of metal atoms in the metal oxide.

Spinel-type metal oxides are thermally stable and can be durable in acidic or alkaline aqueous metallization baths. The spinel-type metal oxide, for example, by appropriately controlling the dispersibility of the thermosetting resin composition, in a high oxide state, forms an unirradiated region on the surface of the cured product of the thermosetting resin composition. Can exist. As an example of the spinel-type metal oxide as described above, for example, those described in JP-A-2004-534408 can be mentioned.

The metal oxide having the transition metal element of (ii) is selected from the groups 3 to 12 of the periodic table, and the metal oxide having two or more transition metal elements adjacent to the group is selected. Is. Here, the metal belonging to the transition metal element can be expressed as containing a metal of group n in the periodic table and a metal of group n + 1. As the metal oxide having the transition metal element, the oxides of these metals may be used alone or in combination of two or more.

Metals belonging to Group n of the periodic table include, for example, Group 3 (scandium, ittrium), Group 4 (titanium, zirconium, etc.), Group 5 (vanadium, niobium, etc.), Group 6 (chromium, molybdenum, etc.), Group 7. Group 8 (iron, ruthenium, etc.), Group 9 (cobalt, rhodium, iridium, etc.), Group 10 (nickel, palladium, platinum), Group 11 (copper, silver, gold, etc.), Group 12 (zinc) , Cadmium, etc.), Group 13 (aluminum, gallium, indium, etc.).

Group n + 1 metals in the periodic table include, for example, Group 4 (titanium, zirconium, etc.), Group 5 (vanadium, niobium, etc.), Group 6 (chromium, molybdenum, etc.), Group 7 (manganese, etc.), Group 8 (iron, etc.). , Ruthenium, etc.), Group 9 (cobalt, rhodium, iridium, etc.), Group 10 (nickel, palladium, platinum), Group 11 (copper, silver, gold, etc.), Group 12 (zinc, cadmium, etc.), Group 13 (aluminum) , Gallium, indium, etc.).
As an example of the metal oxide having the transition metal element as described above, for example, those described in JP-A-2004-534408 can be mentioned.

The tin-containing oxide of (iii) is a metal oxide containing at least tin. The metal atom constituting the tin-containing oxide may contain antimony in addition to tin. Such tin-containing oxides can contain tin oxide and antimony oxide. More specifically, 90% by mass or more of the metal components contained in the tin-containing oxide may be tin, and 5% by mass or more may be antimony. The tin-containing oxide may further contain lead and / or copper as a metal component. Specifically, in the metal component contained in the tin-containing oxide, for example, 90% by mass or more is tin, 5 to 9% by mass is antimony, and the range is 0.01 to 0.1% by mass. It contains lead and can contain copper in the range of 0.001 to 0.01% by mass. Such tin-containing oxides can contain, for example, tin oxide and antimony oxide, and one or more of lead oxide and copper oxide. The tin-containing oxide may contain trace metal atoms exemplified by the spinel-type metal oxide.
Further, the tin-containing oxide may be used in combination with the spinel-type metal oxide of the above (i) or the metal oxide having the transition metal element of the above (ii).

The content of the non-conductive metal compound in the thermosetting resin composition is adjusted with respect to the entire thermosetting resin composition from the viewpoint of improving the plating characteristics in the cured product of the thermosetting resin composition. For example, it is 2% by mass or more, preferably 4% by mass or more, and more preferably 8% by mass or more. Further, in the cured product of the thermosetting resin composition, from the viewpoint of suppressing a decrease in insulating property and an increase in dielectric tangent, and when the shape of the non-conductive metal compound is non-spherical, the thermosetting resin composition From the viewpoint of improving the fluidity, the content of the non-conductive metal compound is, for example, 20% by mass or less, preferably 18% by mass or less, more preferably 18% by mass or less, based on the entire thermosetting resin composition. It is 15% by mass or less.

Further, the total content of the inorganic filler and the non-conductive metal compound in the thermosetting resin composition is preferable with respect to the entire thermosetting resin composition from the viewpoint of improving the resin mechanical properties and the resin strength. It is 70% by mass or more, more preferably 75% by mass or more, still more preferably 80% by mass or more, and even more preferably 82% by mass or more.
On the other hand, from the viewpoint of improving moldability, the total content of the inorganic filler and the non-conductive metal compound is preferably 98% by mass or less, more preferably 95% by mass, based on the entire thermosetting resin composition. % Or less, more preferably 90% by mass or less.

(Other ingredients)
In the present embodiment, the thermosetting resin composition may contain components other than the above-mentioned components.
For example, the thermosetting resin composition may further contain one or more selected from the group consisting of coupling agents, curing accelerators and (meth) acrylic compounds.

(Coupling agent)
The thermosetting resin composition preferably further contains a coupling agent from the viewpoint of improving the moldability of the second sealing layer.
From the same viewpoint, the coupling agent preferably contains one or more selected from the group consisting of mercaptosilane, aminosilane and epoxysilane. From the viewpoint of continuous moldability, mercaptosilane is preferable, from the viewpoint of fluidity, secondary aminosilane is preferable, and from the viewpoint of adhesion, epoxysilane is preferable.

Among these, as epoxy silane, for example, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4-epoxycyclohexyl) ethyl Examples thereof include trimethoxysilane, and γ-glycidoxypropylmethyldimethoxysilane is preferable.

Examples of aminosilanes include phenylaminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl). γ-Aminopropylmethyldimethoxysilane, N-phenyl-γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-( 6-Aminohexyl) 3-aminopropyltrimethoxysilane, N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane and the like can be mentioned, and N-phenyl-γ-aminopropyltriethoxy is preferable. Silane. The primary amino moiety of aminosilane may be used as a latent aminosilane coupling agent protected by reacting with ketone or aldehyde. Aminosilane may also have a secondary amino group.

Further, examples of the mercaptosilane include γ-mercaptopropyltrimethoxysilane and 3-mercaptopropylmethyldimethoxysilane, as well as bis (3-triethoxysilylpropyl) tetrasulfide and bis (3-triethoxysilylpropyl) disulfide. Examples thereof include a silane coupling agent that exhibits the same function as the mercaptosilane coupling agent by thermal decomposition, and γ-mercaptopropyltrimethoxysilane is preferable.

These silane coupling agents may be blended with those that have been hydrolyzed in advance. These silane coupling agents may be used alone or in combination of two or more.

The content of the coupling agent in the thermosetting resin composition is higher than that of the entire thermosetting resin composition from the viewpoint of improving the moldability by increasing the flow flow length of the thermosetting resin composition. It is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and further preferably 0.1% by mass or more.
On the other hand, the content of the coupling agent is preferable with respect to the entire thermosetting resin composition from the viewpoint of suppressing an increase in water absorption of the cured product of the thermosetting resin composition and obtaining good rust resistance. Is 1% by mass or less, more preferably 0.8% by mass or less, still more preferably 0.6% by mass or less, still more preferably 0.4% by mass or less.

(Curing accelerator)
The curing accelerator may be any as long as it promotes the cross-linking reaction between the thermosetting resin and the curing agent, and those used in general thermosetting resin compositions can be used.

The curing accelerator is a phosphorus atom-containing compound such as an organic phosphine, a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, an adduct of a phosphonium compound and a silane compound; 5.4.0] Undecene-7, tertiary amine compounds such as amidine such as benzyldimethylamine (BDMA) and 2,4,6-trisdimethylaminomethylphenol (DMP-30); tertiary amines, It can contain one or more selected from the nitrogen atom-containing compounds such as the quaternary salt of amidin and amine. Among these, it is more preferable to contain a phosphorus atom-containing compound from the viewpoint of improving curability. Further, from the viewpoint of improving the balance between moldability and curability, it has latent properties such as a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound. It is more preferable to include one. From the same point of view, the curing accelerator is preferably selected from triphenylphosphine, tetraphenylphosphonium bis (naphthalene-2,3-dioxy) phenylsilicate and tetraphenylphosphonium-4,4'-sulfonyldiphenolate 1 Including the above.

When the thermosetting resin composition contains a curing accelerator, the content of the curing accelerator is preferably 0 with respect to the entire thermosetting resin composition from the viewpoint of effectively improving the curability during molding. .1% by mass or more, more preferably 0.15% by mass or more, still more preferably 0.25% by mass or more.
On the other hand, from the viewpoint of improving the fluidity during molding, the content of the curing accelerator is preferably 1% by mass or less, more preferably 0.8% by mass, based on the entire thermosetting resin composition. Hereinafter, it is more preferably 0.5% by mass or less.

((Meta) acrylic compound)
Examples of the (meth) acrylic compound include (meth) acrylic resin, (meth) acrylic oligomer, and (meth) acrylic monomer. When the thermosetting resin composition contains the (meth) acrylic compound, the effect of suppressing cracking and chipping of the sheet when the thermosetting resin composition is formed into a sheet can be improved.
From the viewpoint of suppressing cracking and chipping of the sheet, the (meth) acrylic compound preferably contains a (meth) acrylic monomer.
The (meth) acrylic monomer is preferably a monomer having a boiling point higher than that of the solvent used in the production of the sheet-shaped thermosetting resin composition in the present embodiment.
In addition, it suppresses the volatilization of the (meth) acrylic monomer in the manufacturing process of the sheet-shaped thermosetting resin composition, and also interacts by the chemical reaction between the (meth) acrylic monomer and the solvent and the resin composition. The boiling point of the (meth) acrylic monomer is preferably more than 100 ° C., more preferably 110 ° C. or higher, from the viewpoint of causing a squeeze. By doing so, the sheet-shaped thermosetting resin composition can be made excellent in flexibility to the extent that workability at the time of use can be improved.

Examples of the (meth) acrylic monomer include 2- (meth) acryloyloxyethyl succinic acid, 2- (meth) acryloyloxypropyl succinic acid, 2- (meth) acryloyloxyethyl hexahydrophthalic acid, and 2- (meth). ) Acryloyloxypropylhexahydrophthalic acid, 2- (meth) acryloyloxyethylmethylhexahydrophthalic acid, 2- (meth) acryloyloxypropylmethylhexahydrophthalic acid, 2- (meth) acryloylxyethylphthalic acid , 2- (Meta) acryloyloxypropylphthalic acid, 2- (meth) acryloyloxyethyltetrahydrophthalic acid, 2- (meth) acryloyloxypropyltetrahydrophthalic acid, 2- (meth) acryloyloxyethylmethyltetrahydrophthalic acid Acid, 2- (meth) acryloyloxypropylmethyltetrahydrophthalic acid, 2-hydroxy-1,3-di (meth) acryloxypropane, tetramethylolmethanetri (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-Hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, glycerindi (meth) acrylate, 2-hydroxy-3- (meth) acryloyloxypropyl (meth) acrylate, 1,4-cyclohexanedimethanol Mono (meth) acrylate, ethyl-α- (hydroxymethyl) (meth) acrylate, 4-hydroxybutyl (meth) acrylate, methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl ( Meta) acrylate, tarsal butyl (meth) acrylate, isodecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, isoamyl (meth) acrylate, isostearyl. (Meta) acrylate, behenyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, other alkyl (meth) acrylate, cyclohexyl (meth) acrylate, tertiary butylcyclohexyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, Butyl (meth) acrylate, phenoxyethyl (meth) acrylate, isobornyl (meth) acrylate, glycidyl (meth) acrylate, trimethylpropantri (meth) acrylate, zincmo No (meth) acrylate, zinc di (meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, neopentyl glycol (meth) acrylate, trifluoroethyl (meth) acrylate, 2,2,3,3 -Tetrafluoropropyl (meth) acrylate, 2,2,3,3,4,4-hexafluorobutyl (meth) acrylate, perfluorooctyl (meth) acrylate, perfluorooctylethyl (meth) acrylate, ethylene glycol di ( Meta) acrylate, propylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1, 3-Butandiol di (meth) acrylate, 1,10-decanediol di (meth) acrylate, tetramethylene glycol di (meth) acrylate, methoxyethyl (meth) acrylate, butoxyethyl (meth) acrylate, ethoxydiethylene glycol (meth) Acrylate, methoxypolyalkylene glycol mono (meth) acrylate, octoxypolyalkylene glycol mono (meth) acrylate, lauroxypolyalkylene glycol mono (meth) acrylate, stearoxypolyalkylene glycol mono (meth) acrylate, allyloxypolyalkylene glycol Mono (meth) acrylate, nonylphenoxypolyalkylene glycol mono (meth) acrylate, N, N'-methylenebis (meth) acrylamide, N, N'-ethylenebis (meth) acrylamide, 1,2-di (meth) acrylamide ethylene Glycol, di (meth) acryloyloxymethyltricyclodecane, 2- (meth) acryloyloxyethyl, N- (meth) acryloyloxyethyl maleimide, N- (meth) acryloyloxyethyl hexahydrophthalimide, N- Polyfunctional monomers such as (meth) acryloyloxyethyl phthalimide, N-vinyl-2-pyrrolidone, ethoxylated bisphenol A (meth) acrylate, propoxylated bisphenol A (meth) acrylate, and trimethylolpropane tri (meth) acrylate Can be mentioned.

The content of the (meth) acrylic monomer in the thermosetting resin composition is preferably 0.01% by mass or more with respect to the entire thermosetting resin composition from the viewpoint of suppressing cracking or chipping of the sheet. , More preferably 0.05% by mass or more, still more preferably 0.5% by mass or more.
From the same viewpoint, the content of the (meth) acrylic monomer is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably 1% by mass, based on the entire thermosetting resin composition. % Or less.

Further, the thermosetting resin composition may contain at least one kind of organic thermostable metal chelate complex salt in addition to the above-mentioned non-conductive metal compound.
Further, the thermosetting resin composition may contain, for example, a surfactant, a silicone, a mold release agent, a flame retardant, an ion scavenger, a colorant, a low stress material, an adhesion aid, an antioxidant and the like, if necessary. Additives can be contained. These may be used alone or in combination of two or more.
The amount of each of these components in the thermosetting resin composition can be about 0.01 to 10% by mass, respectively, with respect to the entire thermosetting resin composition.

In the present embodiment, the method for producing the thermosetting resin composition can be selected according to the shape and compounding components of the thermosetting resin composition.
For example, as a method for producing a sheet-shaped thermosetting resin composition, for example, a varnish of a thermosetting resin composition prepared by blending each component is applied on a film and dried to form a sheet. Examples include a method of volatilizing the solvent.
Examples of the varnish coating method include a coating method using a coating machine such as a comma coater or a die coater, and a printing method such as stencil printing or gravure printing.
Alternatively, the thermosetting resin composition may be extruded to form a sheet.

As a method for producing a liquid thermosetting resin composition, for example, each component, additive, etc. are dispersed and kneaded using a device such as a planetary mixer, a three-roll, a two-heat roll, or a Raikai machine, and then vacuumed. A method of producing by defoaming treatment below can be mentioned.

Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted.
For example, in the above embodiment, the case where the sealing material has a two-layer structure of the first sealing layer 105 and the second sealing layer has been illustrated, but the sealing layer provided outside the first sealing layer 105 has been illustrated. The number is not limited, and for example, a configuration having a third sealing layer may be provided. At this time, for example, it is preferable that the outermost sealing layer is composed of a cured product of a thermosetting resin composition for LDS.
Further, in the first and second embodiments, examples of using sheet-like and liquid thermosetting resin compositions for LDS have been mainly described, but the properties of the thermosetting resin compositions for LDS are the same. It is not limited to the above, and may have other properties such as granularity.

Hereinafter, an example of the reference form will be added.
1. 1. With the board
The semiconductor element mounted on the substrate and
A first encapsulant for encapsulating the semiconductor element and
A second encapsulant that covers the surface of the first encapsulant and is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
Including
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Including semiconductor devices.
2. 1. The first encapsulant does not contain the non-conductive metal compound. The semiconductor device described in 1.
3. 3. 1. The thickness of the second encapsulant is 30 μm or more and 500 μm or less. Or 2. The semiconductor device described in 1.
4. 1. The linear expansion coefficient of the second encapsulant in the temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is 7 ppm / ° C. or higher and 20 ppm / ° C. or lower. To 3. The semiconductor device according to any one item.
5. 1. The linear expansion coefficient of the first encapsulant in the temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is 7 ppm / ° C. or higher and 20 ppm / ° C. or lower. To 4. The semiconductor device according to any one item.
6. 1. The second encapsulant seals the entire surface of the first encapsulant on the upper part of the substrate. To 5. The semiconductor device according to any one item.
7. 1. The thermosetting resin composition for LDS further contains a coupling agent. To 6. The semiconductor device according to any one item.
8. The process of preparing a structure in which the semiconductor element mounted on the substrate is sealed by the first sealing material, and
A step of forming a second encapsulant composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING) on the first encapsulant.
Including
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A method for manufacturing a semiconductor device, including.

Hereinafter, embodiments will be described in detail with reference to Examples, but the present invention is not limited to the description of these Examples.

(Example 1)
A sheet-shaped thermosetting resin composition for LDS was prepared according to the formulation shown in Table 1. Specifically, first, a resin mixture obtained by kneading each raw material component excluding the solvent and the acrylic monomer according to the blending amounts shown in Table 1 below is mixed with a predetermined amount of propylene glycol monomethyl ether and the amount of acrylic shown in Table 1. A varnish was prepared by dissolving it in a monomer.
Next, the prepared varnish was applied to the upper surface of a PET film (TR1 manufactured by Unitika Ltd.) with a die coater, and then dried until the propylene glycol monomethyl ether volatilized. By doing so, the resin sheet of this example was produced. The thickness of the obtained resin sheet was 100 μm, and the width was 500 mm.

(Examples 2 and 3)
Granular thermosetting resin compositions for LDS were prepared according to the formulations shown in Table 2. The raw materials in the blending amounts shown in Table 2 were mixed at room temperature using a mixer, and then roll-kneaded at 70 to 100 ° C. Then, the obtained kneaded product was cooled and then pulverized to obtain a granular thermosetting resin composition.

(Example 4)
A liquid thermosetting resin composition for LDS was prepared according to the formulation shown in Table 3. Each raw material in the blending amount shown in Table 3 is placed in a beaker, mixed with a spatula, kneaded three times with a three-roll roll, placed in a beaker, and defoamed in a vacuum oven (normal temperature, 5 mmHg) for 10 minutes. Was carried out to obtain a liquid thermosetting resin composition.

Details of the components listed in Tables 1 to 3 are shown below.
(Thermosetting resin)
Epoxy resin 1: Biphenyl aralkyl type epoxy resin, NC-3000L, Nippon Kayakusha epoxy resin 2: Orthocresol novolac type epoxy resin, EOCN-1020, Nippon Kayakusha epoxy resin 3: Biphenylene skeleton-containing phenol aralkyl type epoxy Resin, NC3000, Nippon Kayakusha Epoxy Resin 4: Bisphenol F type epoxy resin, YDF-870GS, Toto Kasei Co., Ltd. (hardener)
Hardener 1: Trihydroxyphenylmethane type phenol resin, HE910-20, Airwater Chemical Co., Ltd. Hardener 2: Novolak type phenol resin, PR-HF-3, Sumitomo Bakelite Co., Ltd. Hardener 3: Biphenylene skeleton-containing phenol aralkyl type Resin, MEH-7851SS, Meiwa Kasei Co., Ltd. Curing agent 4: Acid anhydride, HN-2200R, Hitachi Kasei Co., Ltd. (curing accelerator)
Curing Accelerator 1: Triphenylphosphine Curing Accelerator 2: Tetraphenylphosphonium Bis (Naphthalene-2,3-dioxy) Phenylsilicate Curing Accelerator 3: Tetraphenylphosphonium-4,4'-Sulfonyldiphenolate (Inorganic Filling) Material)
Inorganic filler 1: Fused spherical silica, MUF-046, manufactured by Ryumori Co., Ltd., average particle size 4.1 μm
Inorganic filler 2: Amorphous silica / crystalline silica, MUF-4V, manufactured by Ryumori Co., Ltd., average particle size 3.8 μm
Inorganic filler 3: Silicon dioxide, SC-2500-SQ, manufactured by Admatex, average particle size 0.6 μm
Inorganic filler 4: Silicon dioxide, SC-5500-SQ, manufactured by Admatex, average particle size 1.6 μm
Inorganic filler 5: Silicon dioxide, MSR-SC3-TS, manufactured by Ryumori Co., Ltd., average particle size 12 μm
Inorganic filler 6: Silicon dioxide, SO-E2 / 24C, manufactured by Admatex, average particle size 0.5 μm
(Acrylic compound)
Acrylic Monomer 1: Trimethylolpropane Trimethacrylate, Light Ester TMP, manufactured by Kyoeisha Chemical Co., Ltd., boiling point 200 ° C or higher (additive)
Additive 1 (non-conductive metal compound): Inorganic composite oxide, Black3702, Asahi Kasei Kogyo Co., Ltd. Additive 2: Nonionic surfactant, BYK-A506, Big Chemie Co., Ltd. (colorant)
Colorant 1: Carbon black, carbon # 5, manufactured by Mitsubishi Chemical Corporation (coupling agent)
Coupling agent 1: 3-Mercaptopropyltrimethoxysilane, S810, Chisso Coupling agent 2: 3-glycidoxypropyltrimethoxysilane, S510, Chisso Coupling agent 3: N-phenyl-γ-amino Propyltrimethoxysilane, CF-4083, Toray Dow Corning Coupling Agent 4: γ-glycidylpropyltrimethoxysilane, KBM-403E, Shin-Etsu Chemical Co., Ltd. (release agent)
Release agent 1: Glycerin trimontanic acid ester, Recolve-WE-4, manufactured by Clariant Japan (silicone)
Silicone 1: Polyoxyalkylene epoxy-modified dimethylpolysiloxane, FZ-3730, Toray Dow Corning Silicone 2: Silicone rubber composite particles, KMP600, Shin-Etsu Chemical Co., Ltd. (low stress material)
Low stress material 1: Epoxidized polybutadiene, JP-200, manufactured by Nippon Soda

(Measurement of size of inorganic filler)
For example in Table 3, the d ₅₀ of the entire inorganic filler laser diffraction particle size distribution analyzer (manufactured by Shimadzu Corporation, SALD-7000) was measured by.

(Viscosity of thermosetting resin composition)
The viscosity of the thermosetting resin composition obtained in the example shown in Table 3 was adjusted to 25 ° C. by mounting a 3 ° × R7.7 type cone on an E-type viscometer (TVB-10, manufactured by Toki Sangyo Co., Ltd.). It was measured under the condition of 2.5 rpm.

(Glass transition temperature (Tg), coefficient of linear expansion)
The thermosetting resin composition obtained in each example was compression molded at a molding temperature of 175 ° C. for 3 minutes and PMC 175 ° C. for 4 hours to obtain a cured product.
The glass transition temperature and the coefficient of linear expansion of the cured product were measured by measuring the temperature range from 30 ° C. to 350 ° C. at a heating rate of 10 ° C./min with TMA (TMA6100, manufactured by Hitachi High-Technologies Corporation). In each table, the coefficient of linear expansion of the cured product in the temperature range of Tg or less is also described as CTE1.

(evaluation)
For the thermosetting resin composition obtained in each example, an evaluation sample was prepared by the following method and evaluated.

(Moldability)
The thermosetting resin composition obtained in each example was used for forming the second sealing layer.
First, the first thermosetting resin composition was molded at 175 ° C./180 seconds using a compression molding machine to obtain a 240 mm × 70 mm molded product. Here, as the first thermosetting resin composition, Sumitomo Bakelite Co., Ltd.'s Sumicon (registered trademark) EME-G700H Type C was used.
A molded product obtained by laminating the cured product of the thermosetting resin composition obtained in each example on the obtained molded product was obtained. The manufacturing method and conditions are as follows.
Example 1: With respect to the sheet-shaped encapsulant prepared by the formulation shown in Table 1, the first thermosetting composition prepared earlier was regarded as a substrate by using a compression molding machine, and the molding thickness was 50 μm, 175. Compression molding was performed at ° C./180 seconds.
Examples 2 and 3: With respect to the granular encapsulant prepared by the formulation shown in Table 2, the first thermosetting composition prepared earlier was regarded as a substrate by using a compression molding machine, and the molding thickness was 100 μm. Compression molding was performed at 175 ° C./180 seconds.
Example 4: With respect to the liquid encapsulant prepared by the formulation shown in Table 3, the first thermosetting composition prepared earlier was regarded as a substrate by using a compression molding machine, and the molding thickness was 100 μm and 175 ° C. Compression molding was performed at / 180 seconds.

The obtained molded product was observed and evaluated according to the following criteria.
⊚: None of internal voids or external voids ○: Internal voids are observed, but no external voids △: External voids are observed ×: Unfilled

(warp)
The thermosetting resin composition obtained in the examples shown in Table 3 was used for forming the second sealing layer.
First, the first thermosetting resin composition was molded at 175 ° C./180 seconds using a compression molding machine to obtain a 240 mm × 70 mm molded product. Here, as the first thermosetting resin composition, Sumitomo Bakelite Co., Ltd.'s Sumicon (registered trademark) EME-G700H Type C was used.
The obtained molded product was molded by compression molding under the conditions of 175 ° C./180 seconds to obtain a molded product in which the second sealing layer was laminated. The size of the warp of the obtained molded product was evaluated by the height from the reference plane to the lower end of the molded product. The evaluation criteria are shown below.
◯: Height is 5 mm or less Δ: Height is more than 5 mm and 10 mm or less ×: Height is more than 10 mm

(Plating property)
The resin composition obtained in each example was molded and cured under the condition of 150 ° C. to obtain a cured product. The surface of the obtained cured product was irradiated with a YAG laser (wavelength 1064 nm), electroless copper plating was performed, and the plating property in the laser irradiation region was evaluated according to the following criteria.
◎: No unevenness on the plated surface ○: Some unevenness is visible on the plated surface but no unplated part △: Unevenness is visible on the plated surface but no unplated part ×: Severe unevenness is visible on the plated surface can be

(L / S)
In the same manner as the above-mentioned evaluation of plating properties, a molded product is prepared, the surface of the obtained resin molded product is irradiated with a YAG laser (wavelength 1064 nm), a circuit having a line width of each is created, and conduction is achieved. The narrowest pitched ones are listed in each table as a result of each example.
The evaluation levels were 7 levels of L / S = 20, 30, 40, 50, 75, 100 and 200 μm.

10 Thin film inductor 12, 38 Soft magnetic thin film 13 Insulation layer 14 MID circuit 15, 34 Opening 16, 36 Copper layer 32 MID film 100 Semiconductor device 101 Substrate 103 Semiconductor element 105 First sealing layer 107 Second sealing layer 109 Lead Frame 110 Semiconductor device 111 Second sealing layer

Claims (9)

With electronic components
A first encapsulant that covers at least a part of the surface of the electronic component,
A second encapsulant that covers at least a portion of the surface of the electronic component and the first encapsulant.
Including
At least one of the first and second encapsulants is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Including electronic devices. With the board
The semiconductor element mounted on the substrate and
A first encapsulant for encapsulating the semiconductor element and
A second encapsulant that covers the surface of the first encapsulant and is composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING).
Including
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Electronic devices that are semiconductor devices, including. The electronic device according to claim 1 or 2, wherein the first encapsulant does not contain the non-conductive metal compound. The electronic device according to any one of claims 1 to 3, wherein the thickness of the second sealing material is 30 μm or more and 500 μm or less. Any of claims 1 to 4, wherein the coefficient of linear expansion of the second encapsulant in a temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is 7 ppm / ° C. or higher and 20 ppm / ° C. or lower. The electronic device according to item 1. Any of claims 1 to 5, wherein the linear expansion coefficient of the first encapsulant in a temperature region below the glass transition temperature measured by thermomechanical analysis (TMA) is 7 ppm / ° C. or higher and 20 ppm / ° C. or lower. The electronic device according to item 1. The electronic device according to any one of claims 1 to 6, wherein the second encapsulant seals the entire surface of the first encapsulant on the upper part of the substrate. The electronic device according to any one of claims 1 to 7, wherein the thermosetting resin composition for LDS further contains a coupling agent. The process of preparing a structure in which the semiconductor element mounted on the substrate is sealed by the first sealing material, and
A step of forming a second encapsulant composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING) on the first encapsulant.
Including
The thermosetting resin composition for LDS is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A method for manufacturing a semiconductor device, including.

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