JP2021150343A - Semiconductor device and method for manufacturing the same - Google Patents

Abstract

To provide a technology for easy and stable installation of wiring layers in semiconductor devices.SOLUTION: A semiconductor device 120 includes: a semiconductor element 103; a conductor 121 provided on one side of the semiconductor element 103 and electrically connected to the semiconductor element 103; an encapsulating material 107 that encapsulates the semiconductor element 103 and the conductor 121; and a wiring layer 123 provided on the encapsulating material 107 and in contact with the conductor 121. The encapsulating material 107 is composed of a cured material of a thermosetting resin composition for LDS that includes a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms metal nuclei upon irradiation with an active energy beam.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device and a method for manufacturing the same.

As a technique relating to a resin material used for LASER DIRECT STRUCTURING (LDS), there is one described in Patent Document 1 (Japanese Unexamined Patent Publication No. 2015-134903). The document describes a fiber-reinforced resin material obtained by impregnating continuous fibers with a thermoplastic resin composition containing an LDS additive, and a polyamide resin is used as the thermoplastic resin.

JP-A-2015-134903

The present inventors have studied the use of microfabrication by LDS in the manufacture of semiconductor devices such as molded circuit components (MID).
The present invention provides a technique for providing a wiring layer in a semiconductor device in a simple and stable manner.

According to the present invention
With semiconductor elements
A conductor portion provided on one surface of the semiconductor element and electrically connected to the semiconductor element,
A sealing material that seals the semiconductor element and the conductor portion,
A wiring layer provided on the sealing material and in contact with the conductor portion,
Have,
The sealing material is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Provided is a semiconductor device composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING) containing the above.

According to the present invention
A step of preparing a structure having a semiconductor element, a conductor portion provided on one surface of the semiconductor element and electrically connected to the semiconductor element, and a sealing material for sealing the semiconductor element and the conductor portion. When,
The step of irradiating a specific part of the surface of the sealing material with active energy rays, and
A step of forming a wiring layer connected to the conductor portion by selectively forming a metal layer in a region irradiated with the active energy rays on the surface of the sealing material.
Including
The sealing material is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
Provided is a method for manufacturing a semiconductor device, which comprises a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING) containing the above.

It should be noted that any combination of these configurations and the conversion of the expression of the present invention between methods, devices and the like are also effective as aspects of the present invention.
For example, according to the present invention, it is also possible to obtain a thermosetting resin composition for LDS and a cured product thereof, which are used for the sealing material in the semiconductor device or the method for producing the same in the present invention.

According to the present invention, it is possible to provide a technique for providing a wiring layer on a semiconductor device in a simple and stable manner.

It is sectional drawing which shows the structural example of the semiconductor device in Embodiment. It is sectional drawing which shows an example of the manufacturing process of the semiconductor device in Embodiment. It is sectional drawing which shows the structural example of the semiconductor device in Embodiment. It is sectional drawing which shows an example of the manufacturing process of the semiconductor device in Embodiment. It is sectional drawing which shows the structural example of the semiconductor device in Embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, similar components are designated by a common reference numeral, and the description thereof will be omitted as appropriate. Further, the figure is a schematic view and does not necessarily match the actual dimensional ratio. Unless otherwise specified, "A to B" in the numerical range represents "A or more and B or less". The composition may contain each component alone or in combination of two or more.
In addition, the configurations of the following embodiments can be combined as appropriate.

(First Embodiment)
FIG. 1 is a cross-sectional view showing a configuration example of a semiconductor device according to the present embodiment. The semiconductor device 120 shown in FIG. 1 seals the semiconductor element 103, the conductor portion 121 provided on one surface of the semiconductor element 103 and electrically connected to the semiconductor element 103, and the semiconductor element 103 and the conductor portion 121. It has a sealing material 107 to be formed, and a wiring layer 123 provided on the sealing material 107 and in contact with the conductor portion 121. The encapsulant 107 is a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING), which comprises a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays. It is composed of the cured product of. The composition of the thermosetting resin composition for LDS will be described later.

Specific examples of the semiconductor device 120 include molded circuit parts and various semiconductor packages.
Specific examples of molded circuit parts include those used for mobile electronic devices such as mobile phones, sensor parts such as automobiles or medical devices, and members such as power management parts.
Specific examples of semiconductor packages include MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), and SON (Small Outline Non). -leaded Package), BGA (Ball Grid Array), LF-BGA (Lead Flame BGA), FCBGA (Flip Chip BGA), MAPBGA (Molded Array Process BGA), eWLB (Embedded Wafer-Level BGA), Fan-In type eWLB , Fan-Out type eWLB and other semiconductor packages; SIP (System In package) and the like.

Further, the semiconductor device 120 is, for example, a three-dimensional molded circuit component (Molded Interconnect Device: MID). The MID has three elements of a three-dimensional shape, the resin molded product, and a three-dimensional circuit. For example, the MID is a component in which a circuit is formed of a metal film on the surface of a resin molded product having a three-dimensional structure. Specifically, the MID can include a resin molded product having a three-dimensional structure and a three-dimensional circuit formed on the surface of the resin molded product. By using such an MID, the space can be effectively utilized, the number of parts can be reduced, and the size can be reduced.

The semiconductor element 103 is provided with a conductor portion 121. Here, the semiconductor element 103 may be in the form of a semiconductor chip or a semiconductor package.
The conductor portion 121 is a conductive member provided on the semiconductor element 103 and more specifically exposed on the surface of the semiconductor element 103. Specific examples of the conductor portion 121 include wiring and electrodes, and more specifically, pillars.

The conductor portion 121 is specifically made of a conductive material, and more specifically made of a metal material. From the viewpoint of improving connection reliability, the material of the conductor portion 121 preferably contains copper (Cu) as a constituent element, is more preferably copper or a copper alloy, and further preferably copper. From the same viewpoint, the conductor portion 121 is preferably a copper pillar.

The sealing material 107 seals the semiconductor element 103 and the conductor portion 121. At least a part of the conductor portion 121 is exposed from the sealing material 107, and the conductor portion 121 and the wiring layer 123 are electrically connected in such a region.

The thickness of the sealing material 107 is preferably 100 μm or more, more preferably 200 μm or more, still more preferably 300 μm or more, from the viewpoint of stably sealing the semiconductor element 103.
Further, from the viewpoint of reducing the thickness of the entire device, the thickness of the sealing material 107 is preferably 600 μm or less, more preferably 500 μm or less, and further preferably 400 μm or less.

Next, a method of manufacturing the semiconductor device 120 will be described. 2 (a) to 2 (d) are cross-sectional views showing an example of a manufacturing process of the semiconductor device 120. The method for manufacturing the semiconductor device 120 includes, for example, the following steps 1 to 3.
(Step 1) A conductor portion 121 provided on one surface of the semiconductor element 103 and the semiconductor element 103 and electrically connected to the semiconductor element 103, and a sealing material 107 for sealing the semiconductor element 103 and the conductor portion 121 are provided. Step of preparing the structure to have (step 2) Step of irradiating a specific portion of the surface of the encapsulant 107 with active energy rays (step 3) A step of irradiating the area of the surface of the encapsulant 107 irradiated with the active energy rays. A step of forming a wiring layer 123 connected to the conductor portion 121 by selectively forming a metal layer Each step will be described in more detail below.

Specifically, step 1 includes the following steps 1-1 to 1-3.
(Step 1-1) Step of mounting the semiconductor element 103 on the support substrate 125 via the conductor portion 121 (Step 1-2) Sealing the semiconductor element 103 and the conductor portion 121 on the element mounting surface of the support substrate 125. Step of forming the stopping material 107 (Step 1-3) A step of removing the support substrate 125 from the sealing material 107 to obtain a structure.

In step 1-1, for example, a support substrate 125 having a release layer 127 on the element mounting surface and a semiconductor element 103 having a conductor portion 121 on one surface are prepared, and the support substrate 125 is prepared according to a conventional method. The semiconductor element 103 is mounted on the release layer 127 of the above (FIG. 2A).

From the viewpoint of improving the manufacturing efficiency of the semiconductor device 120, the support substrate 125 is preferably a wafer, more preferably a Si wafer or a glass wafer. When the support substrate 125 is a wafer, the step 1 is preferably a step of mounting a plurality of semiconductor elements 103 on one support substrate 125.
A SUS substrate can be mentioned as a specific example of the other support substrate 125.
Further, the release layer 127 includes a layer usually used as a surface protective layer of the support substrate 125 or an adhesive layer of the semiconductor element 103, and is appropriately selected depending on the material of the support substrate 125, but from the viewpoint of improving handleability. , Preferably heat-removable double-sided tape (for example, Riva Alpha (registered trademark), manufactured by Nitto Denko KK).

In step 1-2, a sealing material 107 composed of a cured product of the thermosetting resin composition for LDS is formed (FIG. 2 (b)). For the formation of the sealing material 107, compression molding or transfer molding is preferably used from the viewpoint of improving production stability and improving the sealing stability of the semiconductor element 103 and the conductor portion 121.
When the support substrate 125 is a wafer, step 1-2 is preferably a step of collectively sealing a plurality of semiconductor elements 103.

In step 1-3, the encapsulant 107 is detached from the release layer 127 to detach the structure including the semiconductor element 103, the conductor portion 121, and the encapsulant 107 from the support substrate 125 (FIG. 2C). .. Step 3 can be performed according to a conventional method depending on the material of the release layer 127 and the like.

Next, in step 2, the structure peeled off from the support substrate 125 is turned over, and active energy rays such as a laser are selectively applied to a specific portion of the surface of the sealing material 107 on the side where the conductor portion 121 is provided. Irradiate. By laser irradiation, for example, a recess 131 can be formed in the laser irradiation portion of the sealing material 107 (FIG. 2 (d)).
The laser can be appropriately selected from known lasers such as a YAG laser, an excimer laser, and an electromagnetic ray, and a YGA laser is preferable. Further, the wavelength of the laser is not defined, but is, for example, 200 nm or more and 2000 nm or less, and preferably 240 nm or more and 1100 nm or less from the viewpoint of thinning. Among these, preferably 248 nm, 308 nm, 355 nm, 515 nm, 532 nm, 1064 nm or 1060 nm can be mentioned as the laser.
Further, a surface cleaning step may be added after the step 2 and before the step 3.

In step 3, the LDS selectively forms a metal film in a predetermined region of the sealing material 107. In LDS, specifically, the surface of the sealing material 107 containing the LDS additive is irradiated with active energy rays to generate metal nuclei, and the metal nuclei are used as seeds by plating treatment such as electroless plating. , A plating pattern is formed in the energy ray irradiation area. Conductive members such as wirings and circuits can be formed based on this plating pattern. Hereinafter, a more specific description will be given.

In step 3, the wiring layer 123 is selectively formed in the laser irradiation portion on the surface of the sealing material 107, specifically, in the recess 131 (FIG. 1). Specifically, the wiring layer 123 is composed of a plating film.
Further, the step 3 specifically includes a step of applying metal to the recess 131 and a step of growing a metal plating layer in the recess 131.

As the plating treatment, either electrolytic plating or electroless plating may be used. A circuit (plating layer) can be formed by subjecting the region irradiated with the laser in step 2 to a plating treatment. As the plating solution, a known plating solution can be widely used, and a plating solution in which copper, nickel, gold, silver, and palladium are mixed as metal components may be used.

Further, when the support substrate 125 is used as a wafer in step 1, a step of dicing the encapsulant 107 to individualize it may be further included after step 3.
By the above steps, the semiconductor device 120 shown in FIG. 1 is obtained.

In the present embodiment, by using the resin composition for LDS for forming the sealing material 107, the wiring layer 123 electrically connected to the conductor portion 121 can be easily provided in a desired shape in a desired region. At the same time, the wiring layer 123 can be stably formed. Further, by processing the wiring layer 123 by LDS, it is possible to improve the manufacturing stability even when the wiring structure is miniaturized or complicated.

Hereinafter, the points different from the first embodiment will be mainly described.
(Second Embodiment)
FIG. 3 is a cross-sectional view showing a configuration example of the semiconductor device according to the present embodiment. The basic configuration of the semiconductor device 122 shown in FIG. 1 is the same as that of the semiconductor device 120 described above with reference to FIG. 1, but the configuration of the wiring layer is different.

Specifically, in the semiconductor device 122, the sealing material 107 is provided with a through hole 133 penetrating in the thickness direction of the semiconductor element 103, and the wiring layer 129 is provided over the inside of the through hole 133. .. The wiring layer 129 is formed by a first region provided on the sealing material 107 on the side of one surface of the semiconductor element 103 (the surface on which the conductor portion 121 is provided) and the other of the semiconductor element 103. The first region includes a second region provided on the sealing material 107 on the surface side and a third region penetrating the sealing material 107 and connecting to the first and second regions. The second and third regions are formed continuously and integrally.
FIG. 3 shows an example in which the wiring layer 129 is provided on the inner wall of the through hole 133 over the entire thickness direction of the sealing material 107 and over both sides of the sealing material 107. The wiring layer 129 may be provided so as to be connected to the conductor portion 121. For example, the wiring layer 129 may be embedded in a part or the whole of the through hole 133.

4 (a) and 4 (b) are cross-sectional views showing an example of a manufacturing process of the semiconductor device 122. The method for manufacturing the semiconductor device 122 conforms to the first embodiment, and can include, for example, the above-mentioned steps 1 to 3.
Here, in the present embodiment, preferably, step 2 includes a step of providing the sealing material 107 with a through hole 133 penetrating in the thickness direction of the semiconductor element 103 (FIG. 4 (a)), and step 3 penetrates. The step of forming the wiring layer 129 in the region including the inside of the hole 133 is included.
More specifically, the step 2 includes a step of providing a recess 131 in the sealing material 107 on the side of the surface of the semiconductor element 103 where the conductor portion 121 is provided, a step of providing a through hole 133, and a step of providing the semiconductor element 103. A step of providing a recess 135 in the sealing material 107 on the back surface side is included (FIG. 4 (b)). In FIGS. 4A and 4B, the recess 131 and the through hole 133 are provided from the side of the surface of the semiconductor element 103 where the conductor portion 121 is provided, the structure is turned over, and the recess 135 is formed on the back surface. Although the procedure for providing the recesses and through holes 133 is illustrated, the order in which the recesses and through holes 133 are provided is not limited to this. Further, the step of providing the through hole 133 may be the same step as the step of providing the recess 131 or the recess 135, or may be a different step from these.

Further, in the step 3, more specifically, the first region provided on the sealing material 107 on the side of the surface of the semiconductor element 103 provided with the conductor portion 121 and the other surface of the semiconductor element 103. A wiring layer 129 extending over a second region provided on the sealing material 107 on the side of the sealing material 107 and a third region provided in the through hole 133 and connected to the first and second regions is collectively formed. Includes the process of

Also in this embodiment, the same effect as that of the first embodiment can be obtained. Further, in the present embodiment, since the wiring layer 129 is formed from the surface on which the conductor portion 121 of the semiconductor element 103 is provided to the back surface, for example, the rewiring step in the conventional manufacturing of FOWLP (Fan Out Wafer Level Package) can be performed. The wiring layer 129 can be easily and stably formed even when the semiconductor device 122 becomes unnecessary and the structure of the semiconductor device 122 becomes complicated.

(Third Embodiment)
In the first embodiment (FIG. 1), a configuration having one wiring layer 123 on the forming surface side of the conductor portion 121 is illustrated, but a plurality of wiring layers are laminated on the forming surface side of the conductor portion 121. May be good. Further, in the first embodiment (FIG. 1), an example in which the sealing material is composed of one sealing layer is shown, but the sealing material may be configured to have a plurality of sealing layers.
FIG. 5 is a cross-sectional view showing a configuration example of the semiconductor device according to the present embodiment. The basic configuration of the semiconductor device 124 shown in FIG. 5 is the same as that of the semiconductor device 120 shown in FIG. 1, but is in contact with the upper portion of the sealing material (first sealing layer) 107 and is in contact with the second sealing layer 111. Is further provided, and a second wiring layer 113 connected to the wiring layer (first wiring layer) 123 is further provided.
At this time, the second sealing layer 111 is specifically composed of a cured product of the thermosetting resin composition for LDS.

The thickness of the second sealing layer 111 is preferably 10 μm or more, more preferably 30 μm or more, still more preferably 50 μm or more, from the viewpoint of improving processing stability by LDS.
Further, from the viewpoint of reducing the thickness of the entire device, the thickness of the second sealing layer 111 is preferably 300 μm or less, more preferably 200 μm or less, and further preferably 150 μm or less.

The semiconductor device 124 can be manufactured, for example, by performing steps 1 to 3 according to the first embodiment, and then further performing the following steps 4 to 6.
(Step 4) A step of forming a second sealing layer 111 for sealing the sealing material 107 and the wiring layer 123 on the sealing material 107 (Step 5) A specific portion of the surface of the second sealing layer 111. The process of irradiating the active energy rays
(Step 6) A second wiring layer that is electrically connected to the wiring layer 123 by selectively forming a metal layer in a region (recessed portion 137) irradiated with active energy rays on the surface of the second sealing layer 111. Steps for forming 113 Steps 4 to 6 can be performed according to, for example, steps 1-2, 2 and 3, respectively.
In FIG. 5, in step 6, the inner wall of the recess 137 penetrating the second sealing layer 111 covers the entire thickness direction of the second sealing layer 111 and the surface of the second sealing layer 111. An example in which the wiring layer 113 is formed is shown. The second wiring layer 113 may be provided so as to be connected to the wiring layer 123. For example, the second wiring layer 113 may be embedded in a part or the whole of the recess 137.

Further, the method for manufacturing the semiconductor device 124 preferably includes a step (step 7) of performing Ar plasma treatment on the surface of the sealing material 107 provided with the wiring layer 123 after the step 3 and before the step 4. .. Since the component that inhibits the adhesion existing on the wiring layer 123 can be removed by the step 7, the adhesion between the sealing material 107 and the second sealing layer 111 can be further improved. Specific examples of the component that inhibits adhesion include a wax component contained in the thermosetting resin composition when the sealing material 107 is formed by transfer molding.

In step 7, specifically, a structure provided with the wiring layer 123 is arranged in the Ar (argon) plasma generator, Ar gas is supplied into the chamber at a flow rate of about 20 to 500 sccm, and the Ar gas is supplied into the chamber. Plasma processing can be performed by setting the pressure to about 50 to 1000 Pa and generating Ar plasma by applying microwaves (for example, power of about 100 to 1000 W and frequency of about 1 to 20 MHz).

Also in this embodiment, the same effect as that of the first embodiment can be obtained. Further, in the semiconductor device 124, since each sealing layer is composed of a cured product of a thermosetting resin composition for LDS, a multilayer wiring structure can be stably formed by LDS.
Although FIG. 5 illustrates a configuration in which the sealing material is composed of a laminate of two sealing layers, the sealing material may be configured to have three or more sealing layers.
For example, a third sealing layer may be provided on the second sealing layer 111 of the semiconductor device 124, and a third wiring layer connected to the second wiring layer 113 may be provided, each of which is a second sealing. It can be formed according to the method for forming the stop layer 111 and the second wiring layer 113.

(Fourth Embodiment)
In this embodiment, the thermosetting resin composition for LDS used in each of the above-described embodiments will be described.
In the present embodiment, the thermosetting resin composition is a thermosetting resin composition for LDS used for laser direct structuring (LASER DIRECT STRUCTURING: LDS). LDS is one of the methods for manufacturing MID. In LDS, specifically, the surface of a resin molded product containing an LDS additive is irradiated with active energy rays to generate metal nuclei, and the metal nuclei are used as seeds by plating treatment such as electroless plating. A plating pattern is formed in the energy ray irradiation region. Conductive members such as wirings and circuits can be formed based on this plating pattern.
The thermosetting resin composition for LDS (hereinafter, also simply referred to as “thermosetting resin composition”) is a non-conductive resin that forms a metal nucleus by irradiation with a thermosetting resin, an inorganic filler, and active energy rays. Includes, with and from sex metal compounds.
The constituent components and the composition of the thermosetting resin composition can be selected, for example, according to the molding method of the sealing material 107 and the second sealing layer 111, respectively.
When the encapsulant 107 or the like is formed by compression molding, for example, a granular, sheet-like or liquid thermosetting resin composition can be used.
Further, when the sealing material 107 or the like is formed by transfer molding, for example, a granular or sheet-shaped thermosetting resin composition can be used.

(Thermosetting resin)
The thermosetting resin is preferably a group consisting of an epoxy resin and a bismaleimide resin from the viewpoint of improving the plating characteristics at the time of fine processing by LDS and from the viewpoint of reducing the wiring width and the wiring interval when forming a circuit. Includes one or more selected from.
Further, from the viewpoint of improving curability, storage stability, heat resistance, moisture resistance, and chemical resistance, the thermosetting resin preferably contains an epoxy resin, and more preferably an epoxy resin.
On the other hand, from the viewpoint of obtaining more excellent heat resistance, the thermosetting resin preferably contains a bismaleimide resin, and more preferably a bismaleimide resin.

As the epoxy resin, a monomer, an oligomer, or a polymer having two or more epoxy groups in one molecule can be used in general, and the molecular weight and molecular structure thereof are not limited.
The epoxy resin is, for example, a biphenyl type epoxy resin; a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol type epoxy resin such as a tetramethyl bisphenol F type epoxy resin; a stillben type epoxy resin; a phenol novolac type epoxy resin, a cresol novolac type. Novorak type epoxy resin such as epoxy resin; Polyfunctional epoxy resin such as Triphenol methane type epoxy resin exemplified by alkyl modified triphenol methane type epoxy resin; Phenol aralkyl type epoxy resin having phenylene skeleton , Phenol aralkyl type epoxy resin having a phenylene skeleton, phenol aralkyl type epoxy resin having a biphenylene skeleton, phenol aralkyl type epoxy resin such as naphthol aralkyl type epoxy resin having a biphenylene skeleton; dihydroxynaphthalene type epoxy resin, dihydroxynaphthalene dimer Naftor-type epoxy resin such as epoxy resin obtained by glycidyl etherification; Triazine nucleus-containing epoxy resin such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; Arihashi cyclic hydrocarbon such as dicyclopentadiene-modified phenol-type epoxy resin Includes one or more selected from the group consisting of compound modified phenolic epoxy resins.
Of these, the novolak type epoxy resin and polyfunctionality are among these from the viewpoint of suppressing warpage of the molded product obtained by curing the thermosetting resin composition and improving the balance of various properties such as filling property, heat resistance and moisture resistance. An epoxy resin and a phenol aralkyl type epoxy resin can be preferably used. Further, from the same viewpoint, the epoxy resin preferably contains one or more selected from the group consisting of an orthocresol novolac type epoxy resin, a phenol aralkyl type epoxy resin having a biphenylene skeleton, and a triphenylmethane type epoxy resin, and more. Preferably, it comprises one or more selected from the group consisting of orthocresol novolac type epoxy resin and phenol aralkyl type epoxy resin having a biphenylene skeleton.

The bismaleimide resin is a (co) polymer of a compound having two or more maleimide groups.
The compound having two or more maleimide groups includes, for example, at least one of the compound represented by the following general formula (1) and the compound represented by the following general formula (2). Thereby, the glass transition temperature of the cured product of the thermosetting resin composition can be increased, and the heat resistance of the cured product can be improved more effectively.

In the above general formula (1), R ¹ is a divalent organic group having 1 or more carbon atoms and 30 or less carbon atoms, and may contain one or more of an oxygen atom and a nitrogen atom. From the viewpoint of improving the heat resistance of the cured product, ^{it is more preferable that R 1} is an organic group containing an aromatic ring. In the present embodiment, as R ¹ , for example, a structure such as the following general formula (1a) or (1b) can be exemplified.

In the above general formula (1a), R ³¹ is a divalent organic group having 1 or more and 18 or less carbon atoms which may contain one or more of an oxygen atom and a nitrogen atom. Further, each of the plurality of R ^32s is independently a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 or more and 4 or less carbon atoms.

In the above general formula (1b), a plurality of Rs existing independently exist, and R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a phenyl group, and is preferably a hydrogen atom. Further, m is an average value, which is a number of 1 or more and 5 or less, preferably a number larger than 1 and 5 or less, more preferably a number larger than 1 and 3 or less, and further preferably a number larger than 1 and 2 or less. be.

Examples of the compound represented by the general formula (1) that can be applied in the present embodiment include compounds represented by the following formulas (1-1) to (1-3).

In the general formula (2), a plurality of R ² are each independently substituted or unsubstituted at least 1 but no greater than 4 hydrogen or C hydrocarbon group. n is an average value, which is a number of 0 or more and 10 or less, preferably 0 or more and 5 or less.

Moreover, the thermosetting resin may further contain other thermosetting resins. Examples of such thermosetting resins include unsaturated polyester resins such as benzoxazine resins, phenol resins, urea (urea) resins, and melamine resins, polyurethane resins, diallyl phthalate resins, silicone resins, cyanate resins, and polyimide resins. One or more selected from the group consisting of polyamideimide resin and benzocyclobutene resin can be mentioned.

The content of the thermosetting resin in the thermosetting resin composition is adjusted with respect to the entire thermosetting resin composition from the viewpoint of improving the fluidity at the time of molding and improving the filling property and the molding stability. It is preferably 1% by mass or more, more preferably 2% by mass or more, and further preferably 2.5% by mass or more.
On the other hand, from the viewpoint of improving moisture resistance reliability and reflow resistance and suppressing warpage of the molded product, the content of the thermosetting resin is preferably 15% by mass with respect to the entire thermosetting resin composition. % Or less, more preferably 14% by mass or less, still more preferably 13% by mass or less.
Here, in the present embodiment, the content of the thermosetting resin composition as a whole means the entire solid content of the thermosetting resin composition excluding the solvent when the thermosetting resin composition contains a solvent. Refers to the content of. The solid content of the thermosetting resin composition refers to the non-volatile content in the thermosetting resin composition, and refers to the balance excluding volatile components such as water and solvent.

(Hardener)
The thermosetting resin composition may contain a curing agent. The curing agent can be roughly classified into three types, for example, a polyaddition type curing agent, a catalytic type curing agent, and a condensation type curing agent. These may be used alone or in combination of two or more.

Heavy addition hardeners include, for example, aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), metaxylerylene diamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), In addition to aromatic polyamines such as diaminodiphenylsulfone (DDS), polyamine compounds containing dicyandiamide (DICY), organic acid dihydrazide and the like; alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA). Acid anhydrides containing anhydrides, aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA); phenolic resin curing agents; polysulfide, thioesters, thioethers. Polymercaptan compounds such as; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; one or more selected from the group consisting of organic acids such as carboxylic acid-containing polyester resins.

The catalytic curing agent is, for example, one or more selected from the group consisting of imidazole compounds such as 2-methylimidazole, 2-ethyl-4-methylimidazole (EMI24); _{Lewis acids such as BF 3 complex.} including.

The condensation type curing agent contains, for example, one or more selected from the group consisting of a urea resin such as a methylol group-containing urea resin; and a melamine resin such as a methylol group-containing melamine resin.

Among these, it is more preferable to contain a phenol resin-based curing agent from the viewpoint of improving the balance of flame resistance, moisture resistance, electrical properties, curability, storage stability and the like. As the phenol resin-based curing agent, for example, a monomer, an oligomer, or a polymer having two or more phenolic hydroxyl groups in one molecule can be used in general, and the molecular weight and molecular structure thereof are not limited.
The phenol resin curing agent is, for example, a resole-type phenol resin; a novolac-type phenol resin such as a phenol novolac resin, a cresol novolak resin, or a bisphenol novolak; a polyfunctional phenol resin such as a polyvinyl phenol or a triphenol methane-type phenol resin; a terpen-modified phenol. Modified phenolic resins such as resins and dicyclopentadiene-modified phenolic resins; phenolaraldehydes having at least one of a phenylene skeleton and a biphenylene skeletron, and phenolal aralkyl-type phenolic resins such as naphthol aralkyl resins having at least one of a phenylene and biphenylene skeleton; bisphenol A. , Bisphenol F Includes one or more selected from the group consisting of bisphenol compounds such as F. Among these, from the viewpoint of suppressing warpage of the molded product, it is more preferable to contain a novolak type phenol resin, a polyfunctional phenol resin and a phenol aralkyl type phenol resin. Further, a phenol novolac resin, a phenol aralkyl resin having a biphenylene skeleton, and a formaldehyde-modified triphenylmethane-type phenol resin can also be preferably used.

The content of the curing agent in the thermosetting resin composition is higher than that of the entire thermosetting resin composition from the viewpoint of realizing excellent fluidity at the time of molding and improving the filling property and moldability. It is preferably 0.5% by mass or more, more preferably 1% by mass or more, and further preferably 1.5% by mass or more.
On the other hand, the content of the curing agent is preferable with respect to the entire thermosetting resin composition from the viewpoint of improving the moisture resistance reliability and reflow resistance of the electronic component and from the viewpoint of suppressing the warp of the obtained molded product. Is 9% by mass or less, more preferably 8% by mass or less, still more preferably 7% by mass or less.

(Inorganic filler)
The inorganic filler consists of, for example, molten silica such as molten crushed silica and fused spherical silica; silica (silicon dioxide) such as crystalline silica and amorphous silica; alumina; aluminum hydroxide; silicon nitride; and aluminum nitride. Includes one or more selected materials. From the viewpoint of favoring the mechanical properties or thermal properties of the cured product of the thermosetting resin composition, the inorganic filler preferably contains silica such as melt-crushed silica, melt-spherical silica, and crystalline silica, and more preferably silica. Is.

D ₅₀ particle size of the inorganic filler, from the viewpoint of improving moldability, is preferably 1.0μm or more, and more preferably 2.0μm or more.
On the other hand, from the viewpoint of reducing the plated wiring width after the laser processing, d ₅₀ particle size of the inorganic filler is preferably not 10μm or less, more preferably 7.0μm or less, more preferably not more than 5.0 .mu.m.
Here, the particle size distribution of the inorganic filler can be measured on a volume basis using a commercially available laser diffraction type particle size distribution measuring device (for example, SALD-7000 manufactured by Shimadzu Corporation).

The content of the inorganic filler in the thermosetting resin composition is preferably 65% by mass or more, more preferably 65% by mass or more, based on the entire thermosetting resin composition, from the viewpoint of improving the heat resistance and moisture resistance of the cured product. It is preferably 70% by mass or more, and more preferably 75% by mass or more.
On the other hand, from the viewpoint of more effectively improving the fluidity and filling property of the thermosetting resin composition during molding, the content of the inorganic filler is preferably 95% by mass with respect to the entire thermosetting resin composition. % Or less, more preferably 90% by mass or less, still more preferably 85% by mass or less.

(Non-conductive metal compound that forms metal nuclei by irradiation with active energy rays)
A non-conductive metal compound (hereinafter, also simply referred to as “non-conductive metal compound”) that forms a metal nucleus by irradiation with active energy rays acts as an LDS additive. Such a compound is not limited as long as it can form a metal nucleus by irradiation with active energy rays. Although the detailed mechanism is not clear, such non-conductive metal compounds are activated (for example, reduced) when irradiated with active energy rays such as a YAG laser having an absorbable wavelength region. ), It is considered that a metal nucleus capable of metal plating is generated. Then, when the surface of the cured product of the thermosetting resin composition in which the non-conductive metal compound is dispersed is irradiated with active energy rays, a seed region having a metal core capable of metal plating is formed on the irradiated surface. Will be done. By utilizing the obtained seed region, it becomes possible to form a plating pattern such as a circuit on the surface of the cured product of the thermosetting resin composition.

The non-conductive metal compound is selected from, for example, (i) a spinel-type metal oxide, and (ii) groups 3 to 12 of the periodic table, and two or more transition metals having the group adjacent to each other. Includes one or more selected from the group consisting of elemental metal oxides and (iii) tin-containing oxides.

In the above (i), the spinel type structure is _{one of the typical crystal structure types found in AB 2} O ₄ type compounds (A and B are metal elements) which are compound oxides. The spinel structure may be either a forward spinel structure or an inverted spinel structure (B (AB) O ₄ ) in which A and B are partially exchanged, but the forward spinel structure can be used more preferably. In this case, A of the forward spinel structure may be copper.

As the metal atom constituting the spinel-type metal oxide, for example, copper or chromium can be used. That is, the non-conductive metal compound can contain a spinel-type metal oxide containing copper or chromium. For example, copper can be used as the metal atom from the viewpoint of enhancing the adhesion to the copper plating pattern.

In addition to copper and chromium, it contains trace amounts of metal atoms such as antimony, tin, lead, indium, iron, cobalt, nickel, zinc, cadmium, silver, bismuth, arsenic, manganese, magnesium, and calcium. May be. These trace metal atoms may exist as oxides. Further, the content of trace metal atoms can be 0.001% by mass or less with respect to the total amount of metal atoms in the metal oxide.

Spinel-type metal oxides are thermally stable and can be durable in acidic or alkaline aqueous metallization baths. The spinel-type metal oxide, for example, by appropriately controlling the dispersibility of the thermosetting resin composition, in a high oxide state, forms an unirradiated region on the surface of the cured product of the thermosetting resin composition. Can exist. As an example of the spinel-type metal oxide as described above, for example, those described in JP-A-2004-534408 can be mentioned.

The metal oxide having the transition metal element of (ii) is selected from the groups 3 to 12 of the periodic table, and the metal oxide having two or more transition metal elements adjacent to the group is selected. Is. Here, the metal belonging to the transition metal element can be expressed as containing a metal of group n in the periodic table and a metal of group n + 1. As the metal oxide having the transition metal element, the oxides of these metals may be used alone or in combination of two or more.

Metals belonging to Group n of the periodic table include, for example, Group 3 (scandium, ittrium), Group 4 (titanium, zirconium, etc.), Group 5 (vanadium, niobium, etc.), Group 6 (chromium, molybdenum, etc.), Group 7. Group 8 (iron, ruthenium, etc.), Group 9 (cobalt, rhodium, iridium, etc.), Group 10 (nickel, palladium, platinum), Group 11 (copper, silver, gold, etc.), Group 12 (zinc) , Cadmium, etc.), Group 13 (aluminum, gallium, indium, etc.).

Group n + 1 metals in the periodic table include, for example, Group 4 (titanium, zirconium, etc.), Group 5 (vanadium, niobium, etc.), Group 6 (chromium, molybdenum, etc.), Group 7 (manganese, etc.), Group 8 (iron, etc.). , Ruthenium, etc.), Group 9 (cobalt, rhodium, iridium, etc.), Group 10 (nickel, palladium, platinum), Group 11 (copper, silver, gold, etc.), Group 12 (zinc, cadmium, etc.), Group 13 (aluminum) , Gallium, indium, etc.).
As an example of the metal oxide having the transition metal element as described above, for example, those described in JP-A-2004-534408 can be mentioned.

The tin-containing oxide of (iii) is a metal oxide containing at least tin. The metal atom constituting the tin-containing oxide may contain antimony in addition to tin. Such tin-containing oxides can contain tin oxide and antimony oxide. More specifically, 90% by mass or more of the metal components contained in the tin-containing oxide may be tin, and 5% by mass or more may be antimony. The tin-containing oxide may further contain lead and / or copper as a metal component. Specifically, in the metal component contained in the tin-containing oxide, for example, 90% by mass or more is tin, 5 to 9% by mass is antimony, and the range is 0.01 to 0.1% by mass. It contains lead and can contain copper in the range of 0.001 to 0.01% by mass. Such tin-containing oxides can contain, for example, tin oxide and antimony oxide, and one or more of lead oxide and copper oxide. The tin-containing oxide may contain trace metal atoms exemplified by the spinel-type metal oxide.
Further, the tin-containing oxide may be used in combination with the spinel-type metal oxide of the above (i) or the metal oxide having the transition metal element of the above (ii).

The content of the non-conductive metal compound in the thermosetting resin composition is from the viewpoint of improving the plating characteristics of the cured product of the thermosetting resin composition with respect to the entire thermosetting resin composition. Therefore, for example, it is 2% by mass or more, preferably 4% by mass or more, and more preferably 8% by mass or more. Further, in the cured product of the thermosetting resin composition, from the viewpoint of suppressing a decrease in insulating property and an increase in dielectric tangent, and when the shape of the non-conductive metal compound is non-spherical, the thermosetting resin composition From the viewpoint of improving the fluidity, the content of the non-conductive metal compound is, for example, 20% by mass or less, preferably 18% by mass or less, more preferably 18% by mass or less, based on the entire thermosetting resin composition. It is 15% by mass or less.

Further, the total content of the inorganic filler and the non-conductive metal compound in the thermosetting resin composition is preferable with respect to the entire thermosetting resin composition from the viewpoint of improving the resin mechanical properties and the resin strength. It is 70% by mass or more, more preferably 75% by mass or more.
On the other hand, from the viewpoint of improving moldability, the total content of the inorganic filler and the non-conductive metal compound is preferably 98% by mass or less, more preferably 95% by mass, based on the entire thermosetting resin composition. % Or less.

(Other ingredients)
In the present embodiment, the thermosetting resin composition may contain components other than the above-mentioned components.
For example, the thermosetting resin composition may further contain one or more selected from the group consisting of coupling agents and curing accelerators.

(Coupling agent)
The thermosetting resin composition preferably further contains a coupling agent from the viewpoint of improving the moldability of the sealing material 107 and the second sealing layer 111.
The coupling agent is preferably one or more selected from the group consisting of mercaptosilane, aminosilane and epoxysilane from the viewpoint of improving mold moldability by optimizing the viscosity of the thermosetting resin composition. include. From the viewpoint of continuous moldability, mercaptosilane is preferable, from the viewpoint of fluidity, secondary aminosilane is preferable, and from the viewpoint of adhesion, epoxysilane is preferable.

Among these, as epoxy silane, for example, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4-epoxycyclohexyl) ethyl Examples thereof include trimethoxysilane, and γ-glycidoxypropylmethyldimethoxysilane is preferable.

Examples of aminosilanes include phenylaminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl). γ-Aminopropylmethyldimethoxysilane, N-phenyl-γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-( 6-Aminohexyl) 3-aminopropyltrimethoxysilane, N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane and the like can be mentioned, and N-phenyl-γ-aminopropyltriethoxy is preferable. Silane. The primary amino moiety of aminosilane may be used as a latent aminosilane coupling agent protected by reacting with ketone or aldehyde. Aminosilane may also have a secondary amino group.

Further, examples of the mercaptosilane include γ-mercaptopropyltrimethoxysilane and 3-mercaptopropylmethyldimethoxysilane, as well as bis (3-triethoxysilylpropyl) tetrasulfide and bis (3-triethoxysilylpropyl) disulfide. Examples thereof include a silane coupling agent that exhibits the same function as the mercaptosilane coupling agent by thermal decomposition, and γ-mercaptopropyltrimethoxysilane is preferable.

These silane coupling agents may be blended with those that have been hydrolyzed in advance. These silane coupling agents may be used alone or in combination of two or more.

The content of the coupling agent in the thermosetting resin composition is adjusted with respect to the entire thermosetting resin composition from the viewpoint of improving the injection moldability by increasing the flow flow length of the thermosetting resin composition. It is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and further preferably 0.1% by mass or more.
On the other hand, the content of the coupling agent is preferable with respect to the entire thermosetting resin composition from the viewpoint of suppressing an increase in water absorption of the cured product of the thermosetting resin composition and obtaining good rust resistance. Is 1% by mass or less, more preferably 0.8% by mass or less, still more preferably 0.6% by mass or less.

(Curing accelerator)
The curing accelerator may be any as long as it promotes the cross-linking reaction between the thermosetting resin and the curing agent, and those used in general thermosetting resin compositions can be used.

The curing accelerator is a phosphorus atom-containing compound such as an organic phosphine, a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, an adduct of a phosphonium compound and a silane compound; 5.4.0] Undecene-7, amidine such as benzyldimethylamine (BDMA), tertiary amines such as 2,4,6-trisdimethylaminomethylphenol (DMP-30), and the above amidines and amines. It can contain one or more selected from nitrogen atom-containing compounds such as quaternary salts. Among these, it is more preferable to contain a phosphorus atom-containing compound from the viewpoint of improving curability. Further, from the viewpoint of improving the balance between moldability and curability, it has latent properties such as a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound. It is more preferable to include one. From the same point of view, the curing accelerator is preferably selected from triphenylphosphine, tetraphenylphosphonium bis (naphthalene-2,3-dioxy) phenylsilicate and tetraphenylphosphonium-4,4'-sulfonyldiphenolate 1 Including the above.

When the thermosetting resin composition contains a curing accelerator, the content of the curing accelerator is preferably 0 with respect to the entire thermosetting resin composition from the viewpoint of effectively improving the curability during molding. .1% by mass or more, more preferably 0.15% by mass or more, still more preferably 0.25% by mass or more.
On the other hand, from the viewpoint of improving the fluidity during molding, the content of the curing accelerator is preferably 1% by mass or less, more preferably 0.8% by mass, based on the entire thermosetting resin composition. Hereinafter, it is more preferably 0.5% by mass or less.

Further, the thermosetting resin composition may contain at least one kind of organic thermostable metal chelate complex salt in addition to the above-mentioned non-conductive metal compound.

In addition, the thermosetting resin composition of the present embodiment contains, if necessary, additives such as a mold release agent, a flame retardant, an ion scavenger, a colorant, a low stress agent, and an antioxidant. be able to. These may be used alone or in combination of two or more.
The amount of each of these components in the thermosetting resin composition can be about 0.01 to 2% by mass, respectively, with respect to the entire thermosetting resin composition.

Further, the thermosetting resin composition of the present embodiment preferably does not contain carbon such as carbon black used as the colorant from the viewpoint of improving the plating characteristics.

The method for producing the thermosetting resin composition can be selected according to the shape and compounding components of the thermosetting resin composition. Specific examples of the shape of the thermosetting resin composition include solid and liquid forms such as sheet-like and granular (for example, granular and tablet-like).
For example, as a method for producing a liquid thermosetting resin composition, for example, each component, an additive, etc. are dispersed and kneaded using an apparatus such as a planetary mixer, a triple roll, a double thermal roll, or a vacuum machine. , A method of producing by defoaming treatment under vacuum can be mentioned.
Further, as a method for producing a granular or sheet-shaped thermosetting resin composition, for example, each component of the thermosetting resin composition is mixed by a known means to obtain a mixture, and the mixture is melt-kneaded. A method of obtaining a kneaded product can be mentioned. As a kneading method, for example, an extrusion kneader such as a single-screw kneading extruder or a twin-screw kneading extruder or a roll-type kneader such as a mixing roll can be used, but a twin-screw kneading extruder is used. Is preferable. After cooling, the kneaded product can be shaped into a predetermined shape.

Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted.

103 Semiconductor element 107 Encapsulant (first encapsulation layer)
111 Second sealing layer 113 Second wiring layer 120 Semiconductor device 121 Conductor portion 122 Semiconductor device 123 Wiring layer (first wiring layer)
124 Semiconductor device 125 Support substrate 127 Peeling layer 129 Wiring layer 131 Recessed 133 Through hole 135 Recessed 137 Recessed

Claims (10)

With semiconductor elements
A conductor portion provided on one surface of the semiconductor element and electrically connected to the semiconductor element,
A sealing material that seals the semiconductor element and the conductor portion,
A wiring layer provided on the sealing material and in contact with the conductor portion,
Have,
The sealing material is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A semiconductor device composed of a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING) containing. The semiconductor device according to claim 1, wherein the conductor portion includes a copper pillar. The semiconductor device according to claim 1 or 2, wherein the thermosetting resin composition for LDS further contains a coupling agent. The sealing material is provided with a through hole penetrating in the thickness direction of the semiconductor element.
The semiconductor device according to any one of claims 1 to 3, wherein the wiring layer is provided over the inside of the through hole. The wiring layer
A first region provided on the encapsulant on the side of the one surface of the semiconductor element, and
A second region provided on the encapsulant on the other side of the semiconductor device,
A third region that penetrates the encapsulant and connects to the first and second regions,
The semiconductor device according to any one of claims 1 to 4, wherein the first, second, and third regions are continuously integrally formed. A step of preparing a structure having a semiconductor element, a conductor portion provided on one surface of the semiconductor element and electrically connected to the semiconductor element, and a sealing material for sealing the semiconductor element and the conductor portion. When,
The step of irradiating a specific part of the surface of the sealing material with active energy rays, and
A step of forming a wiring layer connected to the conductor portion by selectively forming a metal layer in a region irradiated with the active energy rays on the surface of the sealing material.
Including
The sealing material is
Thermosetting resin and
Inorganic filler and
Non-conductive metal compounds that form metal nuclei by irradiation with active energy rays,
A method for manufacturing a semiconductor device, which comprises a cured product of a thermosetting resin composition for LDS (LASER DIRECT STRUCTURING). The process of preparing the structure
The process of mounting the semiconductor element on the support substrate via the conductor portion, and
A step of forming the sealing material for sealing the semiconductor element and the conductor portion on the element mounting surface of the support substrate, and
A step of removing the support substrate from the sealing material to obtain the structure, and
6. The method for manufacturing a semiconductor device according to claim 6. The support substrate is a wafer,
The step of mounting a semiconductor element is a step of mounting a plurality of the semiconductor elements on the wafer.
The step of forming the encapsulant is a step of collectively encapsulating the plurality of the semiconductor elements.
The method for manufacturing a semiconductor device according to claim 7, further comprising a step of dicing the sealing material to individualize the sealing material after the step of forming the wiring layer. The step of irradiating the active energy ray includes a step of providing the sealing material with a through hole penetrating in the thickness direction of the semiconductor element.
The method for manufacturing a semiconductor device according to any one of claims 6 to 8, wherein the step of forming the wiring layer includes a step of forming the wiring layer inside the through hole. The process of forming the wiring layer
A first region provided on the encapsulant on the side of the one surface of the semiconductor element, and
A second region provided on the encapsulant on the other side of the semiconductor device,
A third region provided in the through hole and connected to the first and second regions,
The method for manufacturing a semiconductor device according to claim 9, further comprising a step of collectively forming the wiring layers.

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