JP2021123068A - Gas barrier film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gas barrier film exhibiting excellent gas barrier property and transparency.
SOLUTION: The gas barrier film includes a base material, a base layer provided on the base material, and an oxide mixed film provided on the base layer, and has an arithmetic mean roughness (Ra) on the surface of the gas barrier film. ) Is 1.0 nm or less, and the maximum mountain height (Rp) is 10.0 nm or less.
[Selection diagram] None

Description

The present invention relates to a gas barrier film. More specifically, the present invention relates to a gas barrier film exhibiting excellent gas barrier properties and transparency.

Conventionally, a gas barrier film based on a plastic film or the like has been used as a packaging material for foods and medical products, and as an electronic device member such as a display device and a solar cell (Patent Documents 1 and 2). In the gas barrier film, a gas barrier layer made of a metal or a metal oxide is formed in order to block gases such as oxygen and water vapor. In particular, in applications of electronic device members, excellent transparency and gas barrier properties are required.

Japanese Unexamined Patent Publication No. 2019-183244 Japanese Unexamined Patent Publication No. 2013-208844

However, the gas barrier film described in Patent Document 1 and the gas barrier film described in Patent Document 2 are likely to have pinholes on the surface of the base material, and the gas barrier property is likely to be deteriorated. Further, when these gas barrier films are thickened in order to enhance the gas barrier property, the transparency tends to decrease. Therefore, all of these gas barrier films have room for improvement in terms of achieving both gas barrier properties and transparency.

The present invention has been made in view of such a conventional invention, and an object of the present invention is to provide a gas barrier film exhibiting excellent gas barrier properties and transparency.

As a result of diligent studies, the present inventors have provided a base layer on the base material, and by providing an oxide mixed film on the base material, pins starting from fine deposits and protrusions generated on the base material. It is a thin film by providing an oxide mixed film (for example, a layer made of an oxide mixed film of zinc, tin, aluminum, silicon, etc.) that can prevent the formation of holes, and has high gas barrier properties while maintaining high transparency. The present invention has been completed by finding that That is, the gas barrier film of the present invention that solves the above problems mainly includes the following configurations.

(1) A gas barrier film containing a base material, a base layer provided on the base material, and an oxide mixed film provided on the base layer, and an arithmetic mean roughness on the surface of the gas barrier film. A gas barrier film having (Ra) of 1.0 nm or less and a maximum mountain height (Rp) of 10.0 nm or less.

According to such a configuration, the gas barrier film is provided with a base layer with respect to the base material. As a result, even if fine deposits or protrusions are present on the base material, the surface of the base material can be flattened, and an oxide mixed film is provided on the flattened base layer. Be done. As a result, pinholes originating from the fine deposits and protrusions are unlikely to occur, and the gas barrier film can exhibit excellent gas barrier properties. Due to the excellent gas barrier property, there is almost no change in the surface roughness of the underlying layer and the surface roughness after laminating the oxide mixed film.

(2) The gas barrier film according to (1), wherein the oxide mixed film has a thickness of 5 to 250 nm.

According to such a configuration, since the thickness of the oxide mixed film is small, a gas barrier film having excellent transparency can be obtained.

(3) The oxide mixed film contains a first element and a second element, and is a total amount ((a + b) of the number of atoms (a) of the first element and the number of atoms (b) of the second element. The gas barrier film according to (1) or (2), wherein the ratio ((b) / (a + b)) of the number of atoms (b) of the second element to)) is 0.08 to 0.42.

According to such a configuration, the gas barrier film can exhibit better gas barrier properties.

(4) The first element is zinc oxide, the second element is an oxide of at least one metal selected from tin, aluminum and silicon, and the oxide mixed film is the first element. The gas barrier film according to (3), which comprises a mixture of the above-mentioned second element and the above-mentioned second element.

According to such a configuration, the gas barrier film can exhibit even more excellent gas barrier properties.

(5) The gas barrier film according to any one of (1) to (4), wherein the water vapor permeability is ^{less than 1 × 10 -3} (g / m ^{2 / day).}

According to such a configuration, the gas barrier film can exhibit excellent gas barrier property particularly against water vapor.

(6) The gas barrier film according to any one of (1) to (5), wherein the base layer contains an organic-inorganic composite oxide.

According to such a configuration, the gas barrier film has excellent interlayer adhesion between the base material layer and the oxide mixed film. In addition, the gas barrier film exhibits more excellent gas barrier properties.

(7) The silicon component of the base layer in the thickness direction of the base layer by X-ray photoelectron spectroscopy (XPS) from the surface on the side in contact with the oxide mixed film toward the base material side. The gas barrier film according to any one of (1) to (6), wherein the concentration of the number of atoms of the silicon component on the surface on the side in contact with the oxide mixed film is 18 to 40 at%.

According to such a configuration, the surface of the base layer has excellent resistance to the plasma environment when the oxide mixed film is laminated due to the inorganic components abundantly present on the surface of the base layer, and the oxidation formed on the surface of the base layer has excellent resistance. It also has excellent adhesion to the material mixing film. As a result, the gas barrier film has more excellent interlayer adhesion between the base material and the oxide mixed film. In addition, the gas barrier film exhibits even better gas barrier properties.

According to the present invention, it is possible to provide a gas barrier film exhibiting excellent gas barrier properties and transparency.

<Gas barrier film>
The gas barrier film of one embodiment of the present invention includes a base material, a base layer provided on the base material, and an oxide mixed film provided on the base layer. The arithmetic mean roughness (Ra) on the surface of the gas barrier film is 1.0 nm or less, and the maximum mountain height (Rp) is 10.0 nm or less. In the gas barrier film of the present embodiment, a base layer is provided on the base material. As a result, even if fine deposits or protrusions are present on the base material, the surface of the base material can be flattened, and an oxide mixed film is provided on the flattened base layer. Be done. As a result, pinholes originating from the fine deposits and protrusions are less likely to occur, and the gas barrier film can exhibit excellent gas barrier properties. Further, the gas barrier film is provided with an oxide mixed film. A gas barrier film provided with such an oxide mixed film has excellent transparency while exhibiting excellent gas barrier properties. Each configuration will be described below.

(Base material)
As the base material, a resin film widely used in gas barrier films can be used. As an example, the base material is a plastic film or a plastic sheet such as polyethylene terephthalate (PET), cycloolefin polymer (COP), polyethylene (PE), and polyimide (PI). Among these, the base material is preferably made of a flexible material such as a plastic film. As a result, the gas barrier film can be suitably used in a wide range of applications such as electronic device parts such as displays and solar cell panels.

The thickness of the base material is not particularly limited. As an example, the thickness of the base material is preferably 12 μm or more. The thickness of the base material is preferably 200 μm or less. When the thickness of the base material is within the above range, the obtained gas barrier film can exhibit appropriate rigidity and strength.

(Underground layer)
The base layer is provided on the base material. The base layer is provided to flatten the surface of the base material to prevent the formation of defects such as pinholes that occur in the oxide mixed film and to improve the interlayer adhesion between the base material and the oxide mixed film. Be done. That is, for example, when fine deposits or protrusions are present on the base material, when an oxide mixed film is formed on the base material, such deposits or the like are the starting points to cause pinholes. There is a risk. Therefore, in the gas barrier film of the present embodiment, due to the formation of the base layer, even if fine deposits or protrusions are present on the base material, such deposits or surface roughness is formed. It is easy to prevent defects from occurring due to the influence of. As a result, the obtained gas barrier film exhibits excellent gas barrier properties.

The composition of the base layer is not particularly limited. As an example, the base layer is preferably a layer in which a high silicon atom concentration (for example, 18 at% or more and 40 at% or less) exists at the interface with the oxide mixed film. Such an underlayer is, for example, one in which the silicon atom concentration in the entire underlayer is 18 at% or more and 40 at% or less, or one in which the silicon atom concentration is unevenly distributed in the thickness direction at the interface in contact with the oxide mixed film (underlayer). There are many silicon atoms unevenly distributed near the surface of the surface. Inclined film), and a multi-layered film in which an organic film and an inorganic component are laminated. Since the underlying layer is a layer in which a high silicon atom concentration (for example, 18 at% or more and 40 at% or less) exists at the interface with the oxide mixed film, the underlying layer may have only organic components or the silicon atom concentration may be high. Compared with the case where it is low, it is easy to prevent the surface from being roughened by the plasma environment at the time of forming the oxide mixed film. As a result, the gas barrier film is less likely to cause defects in the oxide mixed film and tends to exhibit excellent gas barrier properties.

Among these, the base layer is preferably a layer containing an organic-inorganic composite oxide, and more preferably a layer in which inorganic components are unevenly distributed at the interface in contact with the oxide mixed film. As a result, the underlying layer exhibits excellent plasma resistance and adhesion to the oxide mixed film. As a result, the gas barrier film suppresses defects that occur in the oxide mixed film, and has excellent interlayer adhesion between the base material layer and the oxide mixed film. In addition, the gas barrier film exhibits more excellent gas barrier properties.

Further, the base layer is preferably silicon oxide composed of SiOx, polysilazane, silicon alkoxide or the like as an inorganic component. When silicon oxide is contained as an inorganic component, the surface of the base material on which the base layer is formed is flat and exhibits excellent plasma resistance, and has excellent adhesion to the oxide mixed film. As a result, the gas barrier film suppresses defects that occur in the oxide mixed film, and the interlayer adhesion between the base material layer and the oxide mixed film is more excellent. In addition, the gas barrier film exhibits even better gas barrier properties.

The method of forming the base layer is not particularly limited. As an example, for the base layer containing the organic-inorganic composite oxide, for example, a solution in which the organic-inorganic oxide is dissolved in an arbitrary solvent is prepared, applied (for example, spray-applied) on the substrate, and cured or dried. Can be formed by At this time, since the surface of the applied solution is flattened by surface tension, the surface of the obtained base layer is also flattened. More specifically, when forming a base layer containing silicon oxide, a SiOx or perhydropolysilazane (PHPS) solution is applied onto the base material (for example, spray coating) and heat-cured to form the base layer. be able to. The underlying layer made of perhydropolysilazane has Si—H, Si—N, Si—O bonds. By curing such an underlayer in an oxidizing atmosphere, it becomes a layer in which oxidation is further advanced, and the interlayer adhesion between the underlayer and the oxide mixed film can be further improved. In addition, the underlying layer containing polysilazane thus formed exhibits excellent flatness and plasma resistance. As a result, when the oxide mixed film is formed on the base material on which the base layer is formed, the oxide mixed film is less likely to cause defects such as pinholes. Further, the surface of the formed oxide mixed film is also excellent in smoothness. As a result, even when the second oxide mixed film is formed on the oxide mixed film, defects such as pinholes are unlikely to occur.

Further, when forming a base layer which is a gradient film in which the concentration of the inorganic component is unevenly distributed in the thickness direction, for example, a solution prepared by dissolving an organic-inorganic hybrid resin containing a silicon alkoxide containing a surfactant component in an arbitrary solvent is used. By preparing, applying on a base material, drying and curing, a gradient film in which silicon alkoxide is unevenly distributed on the surface of the base layer can be formed. In such a gradient film, a large amount of silicon component (for example, 18 at% or more and 40 at% or less) is present in the vicinity of the interface in contact with the oxide mixed film. On the other hand, a large amount of organic components are present in the vicinity of the interface in contact with the base material. By forming a flat surface on the surface on the side where a large amount of inorganic components are present, the interlayer adhesion with the oxide mixed film can be improved. On the other hand, the surface on the side where a large amount of organic components are present has excellent interlayer adhesion with a base material also composed of organic components.

Further, in the multi-layered base layer in which the organic film and the inorganic component are laminated, for example, a base layer composed of an organic component is provided as a base layer on the side in contact with the base material, and the base layer is in contact with one of the oxide mixed films. It can be formed by providing a base layer made of an inorganic component such as SiOx or perhydropolysilazane as the base layer on the side.

The base layer is an oxide when measuring the inorganic component of the base layer in the thickness direction of the base layer by X-ray photoelectron spectroscopy (XPS) from the surface on the side in contact with the oxide mixed film toward the base material side. The concentration of silicon atoms on the surface in contact with the mixed film is preferably 18 at% or more and 40 at% or less. When the concentration of the inorganic component is within the above range, the gas barrier film is excellent in plasma resistance and adhesion to the oxide mixed film due to the inorganic component that is abundantly present on the surface of the base layer. As a result, the gas barrier film suppresses defects that occur in the oxide mixed film, and the interlayer adhesion between the base material layer and the oxide mixed film is more excellent. In addition, the gas barrier film exhibits even better gas barrier properties. In the present embodiment, the concentration of carbon atoms constituting the underlying layer is preferably 55 at% or less on the surface on the side in contact with the oxide mixed film, and is preferably in a portion other than the surface (for example, inside). The concentration of the inorganic component is not particularly limited. The concentration of silicon atoms inside the underlayer may be 40 at% or more, or less than 18 at%. The XPS in the present embodiment can be measured by using an X-ray photoelectron spectroscopy analyzer (PHI5000 VersaProbe2, manufactured by ULVAC-PHI, Inc.).

The thickness of the base layer is not particularly limited. As an example, the thickness of the base layer is preferably 0.5 μm or more, and more preferably 1.0 μm or more. The thickness of the base layer is preferably 10 μm or less, and more preferably 5 μm or less. When the thickness of the base layer is within the above range, the surface of the obtained gas barrier film is likely to be flattened, and the interlayer adhesion with the oxide mixed film is likely to be improved.

(Oxide mixed film)
The oxide mixed film is a layer provided on the base material. The oxide mixed film is not particularly limited. As an example, the oxide mixed film is made of zinc oxide and at least one metal selected from tin (Sn), aluminum (Al) and silicon (Si) because the obtained gas barrier film has excellent gas barrier properties. It preferably consists of a mixture with oxides. More specifically, the oxide mixed film includes an oxide film containing a mixture of zinc oxide, silicon oxide and aluminum oxide (hereinafter, also referred to as AZO oxide film) and a mixture of zinc oxide and tin oxide. It is preferably an oxide film (hereinafter, also referred to as ZTO oxide film).

In the oxide mixed film of the present embodiment, the number of atoms (b) of the second element is relative to the total amount ((a + b)) of the number of atoms (a) of the first element and the number of atoms (b) of the second element. The ratio ((b) / (a + b)) is preferably 0.08 to 0.42.

As a more preferable specific example, tin, aluminum and tin, aluminum and iron with respect to the total amount ((a + b)) of the atomic number (a) of zinc and the atomic number (b) of at least one metal selected from tin, aluminum and silicon. The ratio ((b) / (a + b)) of the number of atoms (b) of at least one metal selected from silicon is preferably 0.08 or more. The ratio ((b) / (a + b)) is preferably 0.42 or less. When the ratio ((b) / (a + b)) is within the above range, the gas barrier film can exhibit more excellent gas barrier properties. An X-ray photoelectron spectroscopic analyzer (PHI5000 VersaProbe2, manufactured by ULVAC-PHI, Inc.) can be used for the measurement.

The refractive index of the oxide mixed film is not particularly limited. As an example, the refractive index of the oxide mixed film is preferably 1.70 to 2.03. The refractive index of the oxide mixed film can be measured by, for example, using a spectrophotometer (SolidSpec-3700, Shimadzu Corporation) to perform spectroscopic analysis of transmission and reflection at 300 nm to 800 nm. When the refractive index of the oxide mixed film is within the above range, the transparency of the obtained gas barrier film is less likely to decrease, and the difference in color is smaller.

The method for adjusting the refractive index of the oxide mixed film within the above range is not particularly limited. As an example, the refractive index of the oxide mixed film can be adjusted by changing the film formation pressure and the oxygen partial pressure during reactive sputtering.

When silicon is contained in the oxide mixed film, the silicon content is not particularly limited. As an example, the silicon content is preferably 10.0 at% or more, and preferably 14.8 at% or less. When the oxide mixed film contains aluminum, the content of aluminum is not particularly limited. As an example, the aluminum content is preferably 1.2 at% or more, and preferably 2.1 at% or less. The oxygen content in the oxide mixed film is not particularly limited. As an example, the oxygen content is preferably 51.6 at% or more, and preferably 59.5 at% or less.
The zinc content in the oxide mixed film can be calculated based on the above-mentioned contents of silicon, aluminum and oxygen.

The thickness of the oxide mixed film may be 5 nm or more. The thickness of the oxide mixed film may be 250 nm or less. When the thickness of the oxide mixed film is within the above range, the obtained gas barrier film exhibits excellent gas barrier properties and is excellent in transparency. Further, even when the gas barrier film is processed to various thicknesses, the difference in color in each thickness is small. The thickness of the oxide mixed film can be measured by, for example, an electron microscope.

The method for forming the oxide mixed film is not particularly limited. As an example, the oxide mixed film can be formed by a sputtering method. Specifically, in the case of the AZO oxide film, the oxide mixed film uses, for example, a mixed target composed of aluminum oxide, silicon oxide and zinc oxide, and is subjected to a reactive sputtering method in a mixed gas atmosphere of argon and oxygen. , AZO oxide film is formed on the base material (on the base layer formed on the base material).

Returning to the description of the entire gas barrier film, the gas barrier film of the present embodiment preferably has a water vapor transmission rate (WVTR) of ^{less than 1 × 10 -3} (g / m ² / day). In the gas barrier film of the present embodiment, the oxide mixed film is laminated and the thickness of the oxide mixed film is 5 to 250 nm. Therefore, the gas barrier film can exhibit excellent gas barrier properties particularly against water vapor. In this embodiment, the water vapor permeability can be measured by the "differential pressure method (ISO 15106-5)".

The arithmetic mean roughness (Ra) on the outermost surface of the gas barrier layer is 1.0 nm or less, and the maximum mountain height (Rp) is 10.0 nm or less. The arithmetic mean roughness (Ra) may be 1.0 nm or less, preferably 0.5 nm or less. The maximum mountain height (Rp) may be 10.0 nm or less, preferably 5.0 nm or less. When the arithmetic mean roughness (Ra) and the maximum mountain height (Rp) are within the above ranges, the oxide mixed film is formed on the base material on which the flat base layer is formed. As a result, the gas barrier film has excellent interlayer adhesion between the base material layer and the oxide mixed film. In addition, the gas barrier film exhibits more excellent gas barrier properties. In the present embodiment, the method for measuring the arithmetic mean roughness Ra and the maximum mountain height Rp is not particularly limited. As an example, the arithmetic mean roughness Ra and the surface roughness Rp are measured in dynamic mode using an AFM (SPM-9700, manufactured by Shimadzu Corporation) and a probe (NCHR-20, manufactured by NanoWorld). It can be measured by measuring the range of 10 μm × 10 μm on the surface of the formation and calculating the arithmetic mean roughness (Ra) and the maximum mountain height (Rp).

Further, the gas barrier film of the present embodiment preferably has a total light transmittance of 80% or more, and more preferably 85% or more. In the gas barrier film of the present embodiment, the oxide mixed film is laminated and the thickness of the oxide mixed film is 10 to 250 nm. However, the gas barrier film exhibits excellent total light transmittance and excellent transparency. In this embodiment, the total light transmittance is specified in JIS K 7361-1: 1997 (corresponding to ISO13468-1: 1996) using a haze meter (NDH4000, manufactured by Nippon Denshoku Kogyo Co., Ltd.). It can be measured by the method.

The gas barrier film of the present embodiment may be provided with a resin layer in order to protect the oxide mixed film. The resin layer can be produced by an active ray-curable resin-based paint, a thermosetting resin-based paint, or the like. The resin layer may be laminated with an acrylic resin, a urethane resin, an epoxy resin, or the like by coating so that the transparency of the gas barrier film is not easily impaired. The film thickness of the resin layer is preferably 5 μm or less so that the gas barrier film does not curl or the like.

Further, a protective film (for example, several tens of μm) may be provided on the oxide mixed film. The protective film is not particularly limited. For example, the protective film may be a film in which an adhesive layer is provided on an olefin resin film such as polyethylene or polypropylene, or a film in which an adhesive layer such as acrylic resin or urethane resin is coated on a resin film such as PET. be. The protective film is for temporarily protecting the surface of the gas barrier film and is premised on peeling, so that transparency is not required. Further, in order to prevent damage to the gas barrier film during peeling, the adhesive strength of the protective film is preferably 0.5 N / 25 mm or less. By providing the flexible protective resin layer or protective film, the oxide mixed film is prevented from being mechanically scratched and the gas barrier property is less likely to deteriorate.

In the gas barrier film of the present embodiment, a resin film having a functional layer such as a transparent conductive layer can be laminated on the oxide mixed film via a known adhesive layer or adhesive layer. As a result, the gas barrier film can be suitably used for applications such as touch panels such as electronic paper, solar cells, and organic EL displays.

As described above, in the gas barrier film of the present embodiment, a base layer is provided on the base material. As a result, even if dust or fine protrusions are present on the base material, the surface of the base material can be flattened, and an oxide mixed film is provided on the flattened base layer. .. As a result, pinholes originating from the dust and protrusions are unlikely to occur, and the gas barrier film can exhibit excellent gas barrier properties. Further, the gas barrier film is provided with an oxide mixed film having a thickness of 5 to 250 nm. A gas barrier film provided with such an oxide mixed film exhibits excellent gas barrier properties, and is excellent in transparency because the thickness of the oxide mixed film is small.

Hereinafter, the present invention will be described in more detail with reference to Examples. The present invention is not limited to these examples.

(Example 1)
A PET film (thickness: 125 μm) was used as a base material, and an organic-inorganic composite layer (NH-1000G: manufactured by Nippon Soda Co., Ltd.) was applied as a base layer on the base material by a wet coating method. The arithmetic mean roughness (Ra), maximum peak height (Rp), and amount of inorganic components of the underlying layer were measured by the measurement methods shown below. _{Next, the ratio of the amount of Ar gas to O 2} gas introduced into the base material provided with the base layer was 9.0: 1.0, the film formation pressure was 0.14 Pa, and the input power density was 3.3 W /. Reactive sputtering was carried out under the condition of cm ^2, and a ZTO film (refractive index: 2.01) was formed as an oxide mixed film so as to have a thickness of 33 nm to prepare a gas barrier film. The tin content of the tin oxide in the ZTO film was 6.8 at%, the total oxygen content of each oxide was 44.9 at%, and the balance was zinc. In addition, the arithmetic mean roughness (Ra) and the maximum mountain height (Rp) were measured in the same manner as the base material provided with the base layer. The number of each atom was measured in a dynamic mode using an AFM (SPM-9700, manufactured by Shimadzu Corporation) and a probe (NCHR-20, manufactured by NanoWorld) in a range of 10 μm × 10 μm on the surface of the base layer. It can be measured by calculating the arithmetic mean roughness (Ra) and the maximum peak height (Rp).

<Arithmetic mean roughness Ra and maximum mountain height Rp>
Arithmetic mean roughness Ra and maximum mountain height Rp are 10 μm x 10 μm on the surface of the gas barrier film in dynamic mode using an AFM (SPM-9700, manufactured by Shimadzu Corporation) and a probe (NCHR-20, manufactured by NanoWorld). It was measured over a range of 10 μm and measured by calculating the arithmetic mean roughness Ra and the maximum peak height Rp.

<Amount of inorganic components>
The amount of inorganic components on the surface of the base layer on which the oxide mixed film was formed was measured. Specifically, the amount of the inorganic component of the base layer in the thickness direction of the base layer was measured by X-ray photoelectron spectroscopy (XPS) from the surface on the side in contact with the oxide mixed film toward the base material side. The XPS was measured using an X-ray photoelectron spectroscopy analyzer (PHI5000 VersaProbe2, manufactured by ULVAC-PHI, Inc.).

<Moisture vapor transmission rate (WVTR)>
The water vapor transmittance (%) was measured by the "differential pressure method (ISO 15106-5)".

(Examples 2 to 18, Comparative Examples 1 to 7)
A gas barrier film was prepared by the same method as in Example 1 except that the conditions shown in Table 1 were changed. In Table 1, "a" indicates the zinc content in the oxide mixed film, and "b" is the total content of metals other than zinc (tin, aluminum, silicon) in the oxide mixed film. Is shown.

As shown in Table 1, all of the gas barrier films of Examples 1 to 18 had a small oxide mixed film thickness and excellent transparency. Further, the gas barrier films of Examples 1 to 18 showed excellent gas barrier properties. On the other hand, the gas barrier films of Comparative Examples 1 to 7 were inferior in gas barrier properties.

Claims (7)

A gas barrier film containing a base material, a base layer provided on the base material, and an oxide mixed film provided on the base layer.
A gas barrier film having an arithmetic mean roughness (Ra) of 1.0 nm or less and a maximum mountain height (Rp) of 10.0 nm or less on the surface of the gas barrier film. The gas barrier film according to claim 1, wherein the oxide mixed film has a thickness of 5 to 250 nm. The oxide mixed film contains a first element and a second element.
The ratio of the number of atoms (b) of the second element to the total amount ((a + b)) of the number of atoms (a) of the first element and the number of atoms (b) of the second element ((b) / ( The gas barrier film according to claim 1 or 2, wherein a + b)) is 0.08 to 0.42. The first element is zinc oxide.
The second element is an oxide of at least one metal selected from tin, aluminum and silicon.
The gas barrier film according to claim 3, wherein the oxide mixed film comprises a mixture of the first element and the second element. The gas barrier film according to any one of claims 1 to 4, wherein the water vapor permeability is ^{less than 1 × 10 -3} (g / m ^{2 / day).} The gas barrier film according to any one of claims 1 to 5, wherein the base layer contains an organic-inorganic composite oxide. The base layer measures the silicon component of the base layer in the thickness direction of the base layer by X-ray photoelectron spectroscopy (XPS) from the surface on the side in contact with the oxide mixed film toward the base material side. The gas barrier film according to any one of claims 1 to 6, wherein in this case, the atomic number concentration of the silicon component on the surface on the side in contact with the oxide mixed film is 18 to 40 at%.