JP2021093305A - Charged particle beam device and stage - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the reliability of a charged particle beam apparatus. A charged particle beam device has a stage provided inside a sample chamber 171 and having a sample table 20 and a holder 50 on which a sample 10 is held can be installed. The sample table 20 is provided with terminals TR1 to TR3. A retarding power supply capable of supplying the retarding voltage 31 is provided outside the sample chamber 171, and the retarding power supply and terminals TR1 to TR3 are electrically connected by a vacuum high voltage cable 40. Here, the sheet resistance of the conductive material contained in the terminals TR1 and TR2 is larger than the sheet resistance of the conductive material contained in the high voltage cable 40 for vacuum, and the sheet resistance of the conductive material contained in the terminal TR2 is the sheet resistance of the conductive material contained in the terminal TR1. It is different from the sheet resistance of the conductive material contained in. [Selection diagram] Fig. 5

Description

The present disclosure relates to a charged particle beam device and a stage, and more particularly to a charged particle beam device including a stage having a feeding mechanism for applying a retarding voltage to a holder.

In the conventional analysis technique, for example, a charged particle beam device such as a scanning electron microscope (SEM) is used to measure a pattern of a sample such as a semiconductor device, perform defect inspection, and acquire an image. At the time of analysis, the sample is held in the sample holder, and the sample holder is placed on the sample table. At that time, there is a technique of applying a retarding voltage to the sample holder via the sample table.

For example, Patent Document 1 describes a charged particle beam device including a contact terminal for conducting a sample and a ground, and a surface electrometer for measuring a potential of the surface of the sample with respect to the ground. A technique for applying a retarding voltage to a sample is disclosed.

Japanese Unexamined Patent Publication No. 2010-272586

However, in the technique disclosed in Patent Document 1, when the retarding voltage is applied or cut off, the retarding voltage is unintentionally discharged, or the retarding voltage changes abruptly with the discharge. At that time, generated radiation noise and conduction noise may be generated. Then, there is a problem that the controller and the control unit of the charged particle beam device malfunction due to these influences, and in the worst case, there is a problem that the parts of the charged particle beam device are damaged.

Therefore, a technique for improving the reliability of the charged particle beam apparatus by suppressing the steep movement of electric charges in the power supply line when the retarding voltage is applied is desired.

Other issues and novel features will become apparent from the description and accompanying drawings herein.

A brief overview of typical embodiments disclosed in the present application is as follows.

The charged particle beam device according to the embodiment includes a charged particle source, a stage provided inside the sample chamber and on which a holder for holding the sample can be installed, and a first terminal provided on the stage. It has a second terminal. Further, the charged particle beam device is provided outside the sample chamber and can supply a negative voltage, and the first power supply and the first terminal provided inside the sample chamber. And a first cable electrically connected to the second terminal. Here, the first sheet resistance of the first conductive material contained in the first terminal is larger than the third sheet resistance of the third conductive material included in the first cable, and the second sheet resistance included in the second terminal. The second sheet resistance of the conductive material is larger than the third sheet resistance and different from the first sheet resistance.

The stage according to one embodiment can be equipped with a holder holding a sample for analysis by a charged particle beam device, and is a transport path for transporting the holder and a part of the transport path. Moreover, it has a fixing region for fixing the holder to the stage, a first terminal provided in the transport path, and a second terminal provided in the transport path. Here, the first sheet resistance of the first conductive material contained in the first terminal is different from the second sheet resistance of the second conductive material contained in the second terminal, and the holder is conveyed by the transfer path. In the case, the first terminal contacts the holder in the fixed region.

According to one embodiment, it is possible to provide a stage capable of suppressing the steep charge movement of the power supply line when a retarding voltage is applied. Further, by providing such a stage, the reliability of the charged particle beam apparatus can be improved.

It is a schematic diagram which shows the charged particle beam apparatus in Embodiment 1. FIG. It is a schematic diagram which shows the main part of the charged particle beam apparatus in Embodiment 1. FIG. It is an equivalent circuit diagram which shows the power supply line of the retarding voltage in the study example. It is an equivalent circuit diagram which shows the power supply line of the retarding voltage in Embodiment 1. FIG. It is sectional drawing which shows the structure around a stage in Embodiment 1. FIG. It is sectional drawing which shows the structure around a stage in modification 1. FIG. It is sectional drawing which shows the structure around a stage in Embodiment 2. FIG. It is a perspective view which shows the structure around a stage in Embodiment 3. FIG. It is sectional drawing which shows the structure around a stage in Embodiment 3. FIG. It is a perspective view which shows the rotating member in Embodiment 3. FIG. It is a side view which shows the rotating member in Embodiment 3. FIG. It is a perspective view which shows the rotating member in the modification 2. It is a side view which shows the rotating member in the modification 2. It is a top view which shows the structure around a stage in Embodiment 4. FIG.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In all the drawings for explaining the embodiment, the members having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted. Further, in the following embodiments, the description of the same or similar parts is not repeated in principle unless it is particularly necessary.

Further, in the drawings used in the embodiments, in order to make the drawings easier to see, hatching may be omitted even in the cross-sectional view, and hatching may be added even in the plan view.

Further, although the embodiments are described in sufficient detail for those skilled in the art to implement the present disclosure, other implementations and embodiments are also possible. It is necessary to understand that it is possible to change the composition and structure and replace various elements without departing from the scope and spirit of the technical ideas of the present disclosure. Therefore, the following description should not be construed as limited to them.

Further, in the following description of the embodiment, an example in which the present disclosure is applied to a scanning electron microscope (SEM) using an electron beam as a charged particle beam apparatus will be shown. However, this embodiment should not be construed in a limited way, and the present disclosure may also be applied to devices that use charged particle beams, such as ion beams, or general observation devices.

Further, the X direction, the Y direction, and the Z direction described in the present application are orthogonal to each other. In the present application, the Z direction may be described as an upward direction or a height direction of a certain structure. Further, the planes formed by the X direction and the Y direction form a plane, which is a plane perpendicular to the Z direction. The plane consisting of the Y direction and the Z direction forms a plane, which is a plane perpendicular to the X direction. The plane consisting of the X direction and the Z direction forms a plane, and is a plane perpendicular to the Y direction. For example, in the present application, when the term "planar view viewed from the Y direction" is used, it means that the plane consisting of the X direction and the Z direction is viewed from the Y direction.

(Embodiment 1)
<Structure of charged particle beam device 1>
The charged particle beam device 1 according to the first embodiment will be described below with reference to FIGS. 1 and 2. The charged particle beam device 1 is, for example, a scanning electron microscope (SEM) and an applied device thereof, a length measuring SEM. The length measurement SEM is a device specialized for measuring the dimensions of a fine pattern contained in a sample such as a semiconductor device. FIG. 1 is a schematic diagram illustrating an overall outline of the charged particle beam device 1, and FIG. 2 is a schematic diagram illustrating a main part of the charged particle beam device 1.

Further, the sample 10 used in the first embodiment is, for example, a wafer manufactured by semiconductor technology. The wafer includes a semiconductor substrate, a semiconductor element such as a transistor formed on the semiconductor substrate, a wiring layer formed on the semiconductor element, and the like. Further, the state of the sample 10 includes a case where only the semiconductor substrate is used, a case where the semiconductor element and the wiring layer are completed on the semiconductor substrate, and a case where these are in the process of being manufactured.

First, with reference to FIG. 1, the routes and operations of the sample 10 at the time of loading and unloading will be described.

The charged particle beam device 1 includes a length measuring SEM unit 201 and a sample transfer unit 202, and a cassette 204 containing one or more samples 10 is installed in the user interface 205 outside the charged particle beam device 1. Has been done. The sample transfer unit 202 includes a sample transfer robot 203 for transferring the sample 10 between the cassette 204 and the length measurement SEM unit 201.

The length measurement SEM unit 201 includes a sample chamber 171 and a preparation chamber 172, and the sample chamber 171 is provided with an electro-optical system 170 and a stage 60 on which a holder 50 on which the sample table 20 is held can be installed. .. The stage 60 can move in the X direction, the Y direction, and the Z direction. Further, a holder transfer robot 161 is provided in the preparation room 172.

The inside of the cassette 204 is filled with an inert gas such as nitrogen, and in the preparation chamber 172, the state transition of pressure is repeatedly performed like atmospheric pressure and vacuum. Further, the inside of the sample transport unit 202 may be filled with an inert gas such as nitrogen.

The cassette 204 is manually or automatically mounted on the user interface 205 by a user or factory automated system. The user interface 205 may also be referred to as a load port, cassette stand, or the like. After the cassette 204 for storing the sample 10 is placed, a process such as dimensional measurement and a command are input to the controller (not shown) from the user or the automatic system of the factory.

The controller performs an operation for carrying the sample 10 into the sample chamber 171 in the length measuring SEM unit 201 according to the input processing and command.

First, the sample 10 is taken out from the cassette 204 by the sample transfer robot 203 in the sample transfer unit 202. Next, the sample 10 held by the sample transfer robot 203 is carried into the preparation chamber 172 with the opening and closing of the entrance / exit 173.

The holder 50 is installed on the arm of the holder transfer robot 161 mounted in the preparation chamber 172. The sample 10 is mounted on the holder 50 in the preparation chamber 172 and held by the holder 50.

After the sample 10 is held on the holder 50, the controller issues a command to evacuate the preparation chamber 172. As the doorway 174 opens and closes, the holder transfer robot 161 performs an operation 210 of carrying the holder 50 holding the sample 10 into the sample chamber 171. The carried-in holder 50 is placed on the sample table 20 of the stage 60, and the stage 60 is moved within the visual field range of the electro-optical system 170 by the moving mechanism of the stage 60. When the controller controls the electron optics system 170 via the control unit 101 (see FIG. 2), the dimensional measurement of the pattern of the sample 10 is performed, and the analysis data such as the SEM image of the sample 10 is acquired. ..

After the desired dimensional measurement has been performed, the sample 10 is carried out by the reverse procedure of the above description. The holder 50 is separated from the stage 60 by the operation 210 of the holder transfer robot 161 and is carried out from the sample chamber 171 to the preparation chamber 172. After the preparation chamber 172 is opened to the atmosphere, the sample transfer robot 203 takes out the sample 10 mounted on the holder 50, and the sample 10 is stored in the cassette 204.

Then, the processing of the next sample 10 or the next cassette 204 is carried out by the same procedure. The length-measuring SEM is used as an in-line device for processes in a semiconductor factory that operates 24 hours a day, 365 days a year. Therefore, the charged particle beam device 1 is required to have high performance in terms of operating rate, reliability, and the like.

The configuration of the length measuring SEM unit 201, which is a part of the charged particle beam device 1, will be described with reference to FIG.

First, an outline of the configuration and operation of the electro-optical system 170 will be described. It should be noted that the content described here is an example of the basic configuration, and some parts are omitted from the illustration and description. Therefore, the electro-optical system components and lenses mounted on the electro-optical system 170 in order to realize various functions may be added, deleted, or replaced in FIG.

An electron beam (primary electron beam, charged particle beam) EB1 emitted from an electron source (charged particle source) 110 by an electron optics electrode (not shown) and accelerated is placed on the sample 10 by a scanning deflector 113. It is scanned in one or two dimensions. At this time, the electron beam EB1 is converged by the electron lens 114 and irradiates the sample 10. When irradiating the sample 10, the electron beam EB1 is decelerated by the retarding voltage 31 which is a negative voltage applied to the holder 50.

When the electron beam EB1 irradiates the sample 10, charged particles such as secondary electrons and backscattered electrons are emitted from the irradiated place. The released charged particles are accelerated in the direction of the electron source 110 by an accelerating action based on the retarding voltage 31 applied to the sample 10, collide with the conversion electrode 111, and generate secondary electrons EB2. The secondary electrons EB2 emitted from the conversion electrode 111 are captured by the detector 112. The output of the detector 112 changes depending on the amount of secondary electrons EB2 captured, and the brightness of each pixel of the SEM image is determined according to this output.

For example, when forming a two-dimensional image, an image of a scanning region is formed by synchronizing the control signal of the scanning deflector 113 with the output of the detector 112. For example, when analyzing the photoresist pattern on the sample 10, the length measurement SEM acquires an SEM image of the photoresist pattern, and the width of the photoresist pattern is automatically measured from the shading signal of the SEM image.

The control of the electro-optical system 170 and the formation of the SEM image are controlled by the control signal from the control unit 101. A plurality of controllers and power supplies are mounted on the control unit 101 according to the required number of applications. The control unit 101 is controlled by the controller of the user interface 205 shown in FIG. The controller displays the FAPC (Factory Automation PC) or an information terminal having a monitor capable of visually confirming the display, communicates between the controllers, or communicates with the automatic system of the factory.

Further, the stage 60 includes a sample table 20 on the outermost surface on the electron source 110 side, and the sample table 20 is a litter via a vacuum high voltage cable 40, a vacuum sealing connector 46, and an atmospheric high voltage cable 41. It is electrically connected to the ding power supply 30. That is, the stage 60 is electrically connected to the retarding power supply 30. Therefore, the retarding voltage 31 can be applied to the holder 50 and the sample table 20 via the stage 60 on which the holder 50 can be installed.

The vacuum high-voltage cable 40, the connector 46, the atmospheric high-voltage cable 41, and the retarding power supply 30 are included in the length measuring SEM unit 201, but the vacuum high-voltage cable 40 is provided inside the sample chamber 171. The atmospheric high voltage cable 41 and the retarding power supply 30 are provided outside the sample chamber 171. The connector 46 is made of ceramic or the like and is attached to the wall surface of the sample chamber 171. Further, the connector 46 is connected to the end of the vacuum high-voltage cable 40 and the end of the atmospheric high-voltage cable 41 so as to electrically connect the inside and outside of the sample chamber 171.

Here, the method of applying a retarding voltage 31 which is a negative voltage to the sample 10 via the holder 50 is called a retarding method.

In the scanning electron microscope, the retarding method is a method of obtaining high resolution by decelerating the electron beam EB1 having an acceleration voltage higher than the final acceleration voltage immediately before the sample 10. By using the retarding method, it is possible to observe the sample 10 with high resolution at an extremely low acceleration voltage. The advantages include the ability to improve the resolution at low acceleration, the ability to observe the fine state of the outermost surface of the sample 10, and the ability to observe the sample 10 that is sensitive to damage caused by the electron beam EB1. ..

Due to these advantages, the retarding method is adopted, but for that purpose, it is necessary to apply a retarding voltage 31 which is a relatively large negative voltage to the sample 10. Such a retarding voltage 31 is, for example, a voltage of minus several kV.

The retarding voltage 31 is generated inside the retarding power supply 30 and output to the outside of the retarding power supply 30. The output retarding voltage 31 is introduced into the sample chamber 171 via the atmospheric high voltage cable 41 and the connector 46. Inside the sample chamber 171 the retarding voltage 31 is applied to the sample table 20 of the stage 60 via the vacuum high voltage cable 40. The high-voltage cable 40 for vacuum is wired to the stage 60 so as to withstand the movement of the stage 60.

The step of applying the retarding voltage 31 to the sample 10 is started when the holder 50 is placed on the sample table 20 of the stage 60 and then the stage 60 moves to the visual field range for acquiring an SEM image. At this time, the retarding voltage 31 is applied to the holder 50, and the potential of the holder 50 changes from the reference potential to the retarding potential.

On the contrary, the step of cutting off the retarding voltage 31 from the sample 10 is performed after the work such as acquisition of the SEM image is completed and before the holder transfer robot 161 carries out the holder 50. At this time, the retarding voltage 31 is cut off, and the potential of the holder 50 is returned to the reference potential. After that, the holder 50 is transported to the preparation chamber 172.

When the sample 10 is analyzed inside the sample chamber 171, the electron beam EB1 emitted from the electron source 110 is irradiated to the sample 10, and during the irradiation period of the electron beam EB1, the retarding voltage 31 is set to the holder 50 and the sample table. It is applied to the holder 50 via the contact portion (contact portion) with the 20. By applying the retarding voltage 31 to the holder 50, as described above, the retarding voltage 31 is also applied to the sample 10 integrated with the holder 50, and the surface of the sample 10 becomes the retarding potential. The contact portion is shown as the contact portion 301 in an equivalent circuit diagram such as FIG. 3 or FIG. 4 described later.

Here, since it is necessary to maintain a high vacuum inside the sample chamber 171, it is necessary to make the capacity as small as possible. Normally, the retarding power supply 30 is mounted inside the length measuring SEM unit 201 and provided outside the sample chamber 171. Therefore, the power supply line of the retarding power supply 30 generally tends to be long.

<Power supply line of retarding power supply 30 in the study example and its problems>
FIG. 3 is an equivalent circuit diagram in the study example examined by the inventors of the present application, and is an equivalent circuit diagram showing a power supply line of the retarding power supply 30.

The retarding power supply 30 has a retarding voltage 31, an output capacity 32 of a retarding power supply 30 such as a decap, and a resistance element (output resistance element, current suppression element) 33 of the retarding power supply 30.

In the power supply line of the retarding power supply 30, the equivalent circuits of the high-voltage cable 41 for atmosphere and the high-voltage cable 40 for vacuum are the resistance component 42 of the cable, the induction component 43 of the cable, the resistance component 44 of the cable, and the cable. It is indicated by the volume component 45. Here, the capacitance component 45 of the cable is the total stray capacitance of the power supply line of the retarding power supply 30 including the atmospheric high-voltage cable 41, the vacuum high-voltage cable 40, the connector 46, and the like. In reality, small stray capacitances are present at various points on the power supply line of the retarding power supply 30, but the capacitance component 45 of the cable also includes such small stray capacitances.

On the power supply line of the retarding power supply 30, the sample table 20 (stage 60) has a contact portion 301 to which the retarding power supply 30 line and the holder 50 are connected. In the retarding power supply 30 line, the equivalent circuit of the holder 50 can be indicated by the capacitance component 51 of the holder 50. Similar to the capacitance component 45 of the cable, there are actually small stray capacitances at a plurality of locations, and here, the total of these stray capacitances is shown as the capacitance component 51 of the holder 50.

As described above, when viewed from the retarding power supply 30, the holder 50 on which the sample 10 is placed can be considered as a capacitive load. Therefore, the retarding power supply 30, which is a high-voltage power supply that outputs minus several kV, does not require a large current. Further, for the purpose of preventing the inrush current, a resistance element 33 is mounted on the output side as a current suppression element.

The resistance element 33 is very important. Even if a person receives an electric shock, the resistance element 33 has a function of being able to narrow down the current value within a safe range. Further, since the retarding voltage 31 is a high voltage, the resistance element 33 also has a function of suppressing a steep change with respect to a transient response when the voltage is applied and when the voltage is cut off. Further, the resistance element 33 also has a function of suppressing the influence of electrostatic induction and the like in order to alleviate the generation of a large electric field during the movement of the stage 60.

When the retarding voltage 31 changes abruptly, a rapid charge transfer (current) is accompanied, and this abrupt change can be considered as a step response or an impulse response. As can be seen by Fourier transforming these responses, since a large number of high-frequency components are contained at the change point, the high-frequency components may be propagated into space as radiation noise. Further, the high frequency component is generated as conduction noise through the stray capacitance contained in the capacitance component 45 of the cable and the capacitance component 51 of the holder 50, such as a vacuum sample chamber, another signal cable, another power cable, and a reference frame. May be propagated to.

In low voltage circuits or small current circuits, the influence of such radiation noise or conduction noise is large. In addition, depending on conditions such as resonance, each noise may increase at a unique location, which may cause a malfunction of the controller in the control unit 101, or in the worst case, damage to electronic components. There is. This may adversely affect the performance of the charged particle beam device 1 and reduce the reliability of the charged particle beam device 1. The resistance element 33 is also important to prevent them.

However, as described above, the atmospheric high-voltage cable 41 and the vacuum high-voltage cable 40 of the power supply line of the retarding power supply 30 are unavoidably long due to the configuration of the charged particle beam device 1. Therefore, the capacitance component 45 of the cable cannot be ignored. In that case, it is difficult to bring out the above-mentioned expected effect only by the presence of the resistance element 33 in the retarding power supply 30 which is the supply source.

For example, in the actual measurement of the device, the relationship of each capacity component is "capacity component 51 of the holder 50 <capacity component 45 of the cable", and the ratio of each capacity component is "capacity component 51 of the holder 50: capacity component 45 of the cable". = 1: 2 ".

As described above, the capacitance component 45 (capacitance C) of the cable increases with the cable length, and the retarding voltage 31 (voltage V) is also high at minus several kV. Therefore, due to the relationship of Q = CV, the capacitance of the cable The charge Q accumulated in the component 45 becomes very large.

The sample table 20 and the holder 50 are in a state where the retarding voltage 31 is applied, that is, when the electric charge is accumulated in the capacitance component 45 of the cable and the capacitance component 51 of the holder 50 is empty (zero state). When they come into contact with each other at the contact portion 301, the electric charge accumulated in the capacitance component 45 of the cable suddenly moves to the capacitance component 51 of the empty holder 50. This means that the current flows steeply, and means a steep change in the retarding voltage 31. That is, this means that the reliability of the charged particle beam device 1 may decrease.

Further, when the retarding voltage 31 is cut off, the holder transfer robot 161 which is the reference potential and the holder 50 come into contact with each other in a state where the electric charge is left in the capacitance component 51 of the holder 50 or the capacitance component 45 of the cable. Then, a rapid charge transfer may occur. Therefore, similarly to the above, the reliability of the charged particle beam device 1 may decrease.

When abrupt movement of electric charge occurs, that is, when a steep current flows, they may appear as large voltages due to the resistance component 42 of the cable and the inductive component 43 of the cable. At the same time, the retarding voltage 31 is accompanied by a steep change.

This steep change in the power supply line may occur unintentionally other than when the retarding voltage 31 is applied and when the retarding voltage 31 is cut off. That is, when a discharge such as creepage discharge or space discharge occurs between the power supply line of the retarding power supply 30 and the reference potential of the chamber and the frame constituting the sample chamber 171. These discharges occur, for example, when a foreign substance is mixed with the sample 10. In this case, a large electric field concentration occurs around the foreign matter, or the foreign matter itself becomes a carrier, which causes dielectric breakdown, and discharge occurs due to the dielectric breakdown.

Further, in the semiconductor manufacturing process, various materials and various chemicals are used, and various substances are contained in the film and the pattern shape constituting the sample 10. Therefore, when the sample 10 is carried into the high vacuum sample chamber 171, gas may be unintentionally generated from the sample 10. The gas is not always generated in the preparation chamber 172, and the gas may be generated in the sample chamber 171. Even when gas is generated from the sample 10, the degree of vacuum is locally lowered, the creepage distance or the space distance cannot be withstood, and an electric discharge may occur. Here, Paschen's law is empirically known that a low vacuum state is a state in which discharge is easier than a high vacuum state or an atmospheric state.

At the time of discharge, the current flows through the frame or cable of the sample chamber 171 where the current should not flow, and the energy generated at the time of discharge causes electromagnetic waves, which are radiated noise, to fly around. The impact of this discharge becomes large when it is accompanied by the movement of many charges. When a discharge occurs, the electric charges stored in the capacitance component 51 of the holder 50 and the capacitance component 45 of the cable are released at once, so that the same sharp voltage change as described above occurs with the impact of the discharge, and radiation noise occurs. Or conduction noise is generated. Therefore, the reliability of the charged particle beam device 1 may decrease due to the influence of the electric discharge.

<Power supply line of retarding power supply 30 in the first embodiment>
The inventors of the present application have devised a power supply line connecting the retarding power supply 30 and the holder 50 in consideration of the problems of the above-mentioned study examples. FIG. 4 shows an equivalent circuit diagram of the power supply line of the retarding power supply 30 according to the first embodiment.

Each configuration of the power supply line shown in FIG. 4 is substantially the same as each configuration of the power supply line shown in FIG. 3 of the study example, but the configuration of the sample table 20 (stage 60) is different from that of the study example. Therefore, in the following description, description of configurations other than the sample table 20 (stage 60) will be omitted.

The sample table 20 in the first embodiment has a first resistance component R1, a second resistance component R2, and a third resistance component R3. Also in the first embodiment, the retarding voltage 31 is applied and cut off via the contact portion 301 between the sample table 20 and the holder 50. Further, in the first embodiment, the wiring structure including the resistance component R1, the resistance component R2, and the resistance component R3 is referred to as a terminal TR1, a terminal TR2, and a terminal TR3, respectively.

Along with the operation 210 of carrying in the holder 50, the retarding voltage 31 is applied to the holder 50 via the terminals TR1 to TR3. That is, the retarding voltage 31 is first applied to the holder 50 via the terminal TR3, then to the holder 50 via the terminal TR2, and finally to the holder 50 via the terminal TR1. In this way, the retarding voltage 31 is gradually increased while the holder 50 is in contact with the terminal TR3, the terminal TR2, and the terminal TR1 in this order. Since the retarding voltage 31 is a negative voltage here, the retarding voltage 31 is actually gradually lowered. Hereinafter, increasing the retarding voltage 31 is referred to as “falling”, and decreasing the retarding voltage 31 is referred to as “rising”.

When the retarding voltage 31 reaches the target potential, the SEM image is finally acquired with the retarding voltage 31 applied to the holder 50 via the terminal TR1.

When the holder 50 is carried out after the SEM image acquisition and pattern measurement processing are completed, the holder 50 is in contact with the terminal TR1 in accordance with the operation 210, and the holder 50 is in contact with the terminal TR2 and the terminal TR3. It is sequentially shifted to the state of being in contact with. Then, the retarding voltage 31 is gradually increased, and after the holder 50 reaches the reference potential, the holder 50 is carried out by the holder transfer robot 161.

Here, since the resistance components R1 to R3 contained in the terminals TR1 to TR3 have a relationship with the capacitance component 51 of the holder 50 and the low-pass filter, the retarding voltage 31 is slowly applied according to the time constant of RC. Become so. That is, when the electric charge accumulated in the capacitance component 45 of the cable flows into the capacitance component 51 of the holder 50, or when the electric charge accumulated in the capacitance component 51 flows into the capacitance component 45 of the cable, the resistance components R1 to R3 , Suppresses the rapid movement of these charges. In other words, the resistance components R1 to R3 limit the inrush current and function as a current suppression element.

Further, when an unintended discharge occurs in the sample 10 or the holder 50, the electric charge accumulated in the capacitance component 51 of the holder 50 is released. However, since the retarding voltage 31 is applied to the holder 50 via the resistance component R1, the current is suppressed, the sudden discharge of electric charge from the capacitance component 45 of the cable is suppressed, and the impact of discharge is reduced. ..

In the period from when the holder 50 is carried into the sample chamber 171 to the acquisition of the SEM image, the holder 50 is moved to the visual field range of the electro-optical system 170, so that there is a little time from an electrical point of view. Within that time range, the retarding voltage 31 can be gradually changed to a target potential, and the retarding voltage 31 can be applied to the holder 50. The same applies when the retarding voltage 31 is cut off.

In order to reduce the influence of the transient response when the retarding voltage 31 is applied or cut off, and to prevent a sudden change in the electric field, the control unit 101 gradually raises or lowers the retarding voltage 31 according to a program. Let me. However, the contact portion 301 between the holder 50 and the sample table 20 is basically the same as the mechanical switch, but due to its mechanical structure, the contact is extremely rarely poor, or chattering. There is a possibility that a situation in which detachment and attachment / detachment are repeated may occur. In such a case, even if the retarding voltage 31 is gradually changed as described above, the expected effect may not be exhibited.

Further, for example, even if the retarding voltage 31 is gradually lowered when the retarding voltage 31 is cut off, if there is an unintentional place where the electric charge is stored, the electric charge is left. The holder 50 and the sample table 20 may come into contact with each other in this state. In that case, as described above, a steep charge transfer may occur. Then, in the case of an irregular situation such as an electric discharge, it is not possible to prevent a steep charge transfer only by dealing with the gradual change in the program.

In consideration of the above, in the first embodiment, the program of the control unit 101 is the same as the conventional one, but the mechanical structure is added. That is, in the contact portion 301, a wiring structure containing two or more different resistance components such as resistance components R1 to R3 is added.

In the first embodiment, the sheet resistances of the resistance components R1 to R3 are different from each other. In other words, the sheet resistances of the conductive materials contained in each of the terminals TR1 to TR3 are different from each other. Further, since the resistance components R1 to R3 need to be set to relatively large resistance values, the sheet resistances of the resistance components R1 to R3 are set to those of the atmospheric high voltage cable 41 and the vacuum high voltage cable 40. It is set to be larger than the sheet resistance of the conductive material contained in each. In other words, the sheet resistance of the conductive material contained in each of the terminals TR1 to TR3 is set to be larger than the sheet resistance of the conductive material contained in each of the atmospheric high voltage cable 41 and the vacuum high voltage cable 40.

Further, the sheet resistance of each of the resistance component R3 and the resistance component R1 is relatively large, and the sheet resistance of the resistance component R2 is smaller than the sheet resistance of each of the resistance component R3 and the resistance component R1. Since the sheet resistance of the resistance component R3 is relatively large, the influence of the first contact can be mitigated. Since the sheet resistance of the resistance component R2 is relatively small, the retarding voltage 31 can be easily stepped up or down by a desired time. Since the sheet resistance of the resistance component R1 is relatively large, it is possible to prepare for unexpected movement of electric charge such as electric discharge. The sheet resistance of the resistance component R3 and the sheet resistance of the resistance component R1 may be the same or different from each other. By setting the sheet resistance of each of the resistance components R1 to R3 in this way, it is possible to prevent the reliability of the charged particle beam device 1 from being lowered.

Although the three types of resistance components R1 to R3 are illustrated in the first embodiment, only the resistance components R1 and the resistance components R2 having different sheet resistances may be applied, or the resistors having different sheet resistances may be applied. Only component R3 and resistance component R2 may be applied. That is, the stage 60 may be provided with at least two types of resistance components having different sheet resistances from each other.

For example, in the case of an application in which the system has a large amount of discharge, the resistance component R2 having a small sheet resistance and the resistance component R1 having a large sheet resistance are applied. By applying the resistance component R2 to the first stage, the retarding voltage 31 can be quickly lowered to the target potential, and by applying the resistance component R1 to the second stage, unexpected movement of electric charge such as discharge can be prevented. be able to.

Further, in the case of an application in which the discharge is small but the stage moves rapidly and the influence of chattering or first contact is unavoidable, the design may be the reverse of the above example. In that case, the influence of the first contact can be alleviated by applying the resistance component R3 having a large sheet resistance, and the retarding voltage 31 can be quickly applied by applying the resistance component R2 having a small sheet resistance in the subsequent stage. It can be lowered to the target potential.

Further, the stage 60 may be provided with three or more types of resistance components. Even in that case, the sheet resistances of the three or more types of resistance components are different from each other, and are larger than the sheet resistances of the conductive materials contained in each of the atmospheric high-voltage cable 41 and the vacuum high-voltage cable 40.

<Structure of stage 60 having terminals TR1 to TR3>
FIG. 5 is a cross-sectional view showing the structure around the sample table 20 in the stage 60 in the first embodiment.

In the first embodiment, the stages 60 (sample table 20) are provided with terminals TR1 to TR3 as a wiring structure containing a resistance component. A part of the stage 60 constitutes a transport path A1 for transporting the holder 50, and the transport path A1 is a movement for moving the holder 50 within the visual field range of the electro-optical system 170 after the holder 50 is installed on the stage 60. The area A2 and the fixed area A3 for the holder 50 to complete the movement and be fixed to the stage 60 are included. Although not shown here, the stage 60 is provided with guide members such as rails and bearings along the transport path A1.

The terminal TR1 has an electrode EL1 provided on the surface of the stage 60 (the surface of the sample table 20) and a resistance element RE1 containing a conductive material constituting the resistance component R1. Further, the terminal TR2 has an electrode EL2 provided on the surface of the stage 60 and a resistance element RE2 containing a conductive material constituting the resistance component R2, and the terminal TR3 has an electrode EL3 provided on the surface of the stage 60. And a resistance element RE3 containing a conductive material constituting the resistance component R3. The electrodes EL1 to EL3 are electrically connected to the resistance elements RE1 to RE3, respectively, and are provided on different surfaces of the stage 60, respectively.

In the first embodiment, the resistance elements RE1 to RE3 are provided inside the sample table 20 and are physically insulated from each other by the insulating layer IL. The resistance elements RE1 to RE3 are provided between the electrodes EL1 to EL3 and the vacuum high-voltage cable 40, respectively, and are electrically connected to the vacuum high-voltage cable 40.

The holder 50 moves in the transport path A1 of the stage 60 by the carry-in or carry-out operation 210. At the time of carrying in, the retarding voltage 31 is applied to the terminals TR1 to TR3 during the period from the time when the holder 50 is installed in the transport path A1 until the holder 50 reaches the fixed region A3. That is, the retarding voltage 31 is first applied to the holder 50 via the electrode EL3 of the terminal TR3, then applied to the holder 50 via the electrode EL2 of the terminal TR2, and finally the electrode EL1 of the terminal TR1. It is applied to the holder 50 via.

At the time of carrying out, the operation opposite to that at the time of carrying in is performed. A retarding voltage 31 is applied to the terminals TR1 to TR3 during the period until the holder 50 moves from the fixed region A3 to the preparation chamber 172 side and the holder 50 is separated from the stage 60 by the holder transfer robot 161. There is. That is, the retarding voltage 31 is first applied to the holder 50 via the electrode EL1 of the terminal TR1, then applied to the holder 50 via the electrode EL2 of the terminal TR2, and finally the electrode EL3 of the terminal TR3. It is applied to the holder 50 via.

While the holder 50 is moving, for example, the holder 50 may come into contact with both the electrode EL3 and the electrode EL2, and the resistance element RE3 and the resistance element RE2 may be connected in parallel. In that case, a combined resistance component of the resistance component R3 and the resistance component R2 is generated, but there is no particular problem if the values of the resistance components R1 to R3 are set so as to have the optimum behavior at that time.

When analyzing the sample 10 inside the sample chamber 171, the analysis is performed in a state where the holder 50 is fixed to the fixed region A3. During the irradiation period of the electron beam EB1, a retarding voltage 31 is applied to the holder 50 from the retarding power supply 30 via the terminal TR1.

Therefore, after the holder 50 reaches the fixed region A3 and is fixed to the stage 60, the terminal TR1 comes into contact with the holder 50 in the fixed region A3. On the other hand, the terminals TR2 and TR3 come into contact with the holder 50 before the holder 50 reaches the fixed area A3, but do not come into contact with the holder 50 after the holder 50 reaches the fixed area A3.

In order to reduce the influence of the capacitance component 45 of the cable shown in FIG. 4, it is necessary to mount the resistance components R1 to R3 in the vicinity of the contact portion 301. The contact portion 301 corresponds to the contact surface between the terminals TR1 to TR3 and the holder 50, and here, the contact surface between the electrodes EL1 to EL3 and the holder 50. As shown in FIG. 5, by providing the terminals TR1 to TR3 including the resistance components R1 to R3 on the sample table 20 of the stage 60, the influence of the capacitance component 45 of the cable can be reduced. Therefore, when the retarding voltage 31 is applied, the steep movement of electric charges in the power supply line can be suppressed, and the reliability of the charged particle beam device 1 can be improved.

Further, since the terminals TR1 to TR3 are provided in the transport path A1 of the stage 60, it is easy to secure a contact surface between the terminals TR1 to TR3 (electrodes EL1 to EL3) and the holder 50. That is, the area of the contact portion 301 can be increased. Therefore, poor contact or problems related to chattering are unlikely to occur, so that the retarding voltage 31 can be stably applied to the holder 50.

(Modification example 1)
The charged particle beam device 1 in the modified example 1 will be described below with reference to FIG. In the following description, the differences from the first embodiment will be mainly described.

In the first embodiment, the resistance elements RE1 to RE3 are provided inside the sample table 20. In the first modification, as shown in FIG. 6, terminals TR1 to TR3 are provided on the stage 60, but the resistance elements RE1 to RE3 are provided outside the sample table 20 and provided in the vicinity of the sample table 20. Has been done.

As described above, in order to reduce the influence of the capacitance component 45 of the cable, it is desirable that the resistance components R1 to R3 (resistive elements RE1 to RE3) are mounted in the vicinity of the contact portion 301. Therefore, in the first modification, the distance between the resistance elements RE1 to RE3 and the electrodes EL1 to EL3 is slightly longer. Therefore, from that viewpoint, the first embodiment is superior to the first modification.

However, from the viewpoint of increasing the degree of freedom in arranging the resistance elements RE1 to RE3 and from the viewpoint of the ease of arranging the resistance elements RE1 to RE3, the modified example 1 is superior to the first embodiment.

(Embodiment 2)
The charged particle beam device 1 according to the second embodiment will be described below with reference to FIG. 7. In the following description, the differences from the first embodiment will be mainly described.

In the first embodiment, the terminals TR1 to TR3 are composed of the electrodes EL1 to EL3 and the resistance elements RE1 to RE3, but in the second embodiment, as shown in FIG. 7, the terminals TR1 to TR3 themselves are themselves. Consists of resistance components R1 to R3. That is, each of the terminals TR1 to TR3 is made of a conductive material provided on the surface of the sample table 20. Further, a common electrode CEL is provided below the terminals TR1 to TR3 so as to come into contact with the terminals TR1 to TR3, and the common electrode CEL is electrically connected to the vacuum high voltage cable 40.

In the second embodiment as in the first embodiment, the sheet resistances of the conductive materials contained in the terminals TR1 to TR3 are different from each other, and the atmospheric high voltage cable 41 and the vacuum high voltage cable 40 have different sheet resistances. Greater than the sheet resistance of the contained conductive material.

The same effect as that of the first embodiment can be obtained in the second embodiment, but in the second embodiment, since it is not necessary to prepare the members to be the resistance elements RE1 to RE3, the terminals TR1 to TR3 are manufactured. Manufacturing cost can be suppressed.

(Embodiment 3)
The charged particle beam apparatus 1 according to the third embodiment will be described below with reference to FIGS. 8 to 11. In the following description, the differences between the first embodiment and the second embodiment will be mainly described.

8 and 9 are perspective views and cross-sectional views showing the structure around the stage according to the third embodiment, and FIGS. 10 and 11 are perspective views and side views showing the rotating member according to the third embodiment. In FIG. 9, hatching of the sample table 20 is omitted in order to make the rotating member RM easier to see.

In the first embodiment and the second embodiment, the surface of the sample table 20 is processed to provide the members to be the terminals TR1 to TR3, but in the third embodiment, the fixed region A3 is provided as shown in FIG. The sample table 20 is provided with holes TH penetrating the sample table 20, and terminals TR1 and TR2 are provided inside the holes TH. Further, the terminals TR1 and TR2 are each configured as a part of the rotating member RM.

As shown in FIGS. 10 and 11, the rotating member RM has a base BS as a base material, and terminals TR1 and TR2 are provided on the surface of the base BS. In the third embodiment, the terminals TR1 and TR2 themselves form the resistance components R1 and R2, and each of the terminals TR1 and TR2 is made of a conductive material that is a part of the rotating member RM. Here, a case where each of the two types of terminals TR1 and TR2 constitutes a part of the rotating member RM is illustrated, but as in the first embodiment, the three types of terminals TR1 to TR3 or the same Each of the above terminals may form a part of the rotating member RM.

The cross-sectional shape of the rotating member RM (base BS) is circular, the terminal TR1 is formed along a part of the circumference of the rotating member RM (base BS), and the terminal TR2 is the rotating member RM (base BS). It is formed along the other part of the circumference of.

A rotating shaft AR is provided near the center CC of the rotating member RM (base BS). In other words, the center of the circle of the rotating member RM and the center of the circle of the rotating axis AR coincide with each other and are represented as the center CC. The rotating shaft AR is electrically connected to the base BS, terminals TR1, TR2, and the high-voltage cable 40 for vacuum, and a retarding voltage 31 can be applied to the terminals TR1 and TR2.

As shown in FIG. 9, when the holder 50 is carried in and out, the rotating member RM rotates in the circumferential direction as the holder 50 moves, so that the terminals TR1 or TR2 come into contact with the holder 50 in order. To do. In the fixed region A3, when the holder 50 is fixed to the sample table 20, the initial positions of the terminals TR1 and TR2 or the rotation speed of the rotating member RM are calculated in advance so that the terminal TR1 comes into contact with the holder 50. There is.

Further, the holder 50 is provided with a plurality of positioning mechanisms 70 that serve as reference points for the rotating member RM. For example, the distance between the two positioning mechanisms 70 corresponds to the distance at which the rotating member RM makes one rotation (the length of the circumference of the rotating member RM). The positioning mechanism 70 is composed of, for example, a concave portion, a convex portion, or an inclined portion provided in a part of the holder 50.

Although the same effect as that of the first and second embodiments can be obtained in the third embodiment, the following advantages can also be obtained by using the rotating member RM in the third embodiment. Such advantages include the ability to compactly design the terminals TR1 and TR2, the ability to suppress wear when they come into contact with the holder 50, and the smooth loading and unloading operation 210 of the holder 50.

(Modification 2)
The semiconductor device according to the second modification will be described below with reference to FIGS. 12 and 13. In the following description, the differences from the third embodiment will be mainly described. 12 and 13 are perspective views and side views corresponding to FIGS. 10 and 11.

In the second modification, similarly to the third embodiment, the terminals TR1 and TR2 are respectively configured as a part of the rotating member RM, but the rotating member RM does not have the base BS and the terminals TR1 and TR2 It is composed of the conductive materials that make up each of the above.

As shown in FIGS. 12 and 13, the cross-sectional shape of each of the terminal TR1 and the terminal TR2 is circular, and the cross-sectional area of the terminal TR2 is smaller than the cross-sectional area of the terminal TR1. The terminal TR2 is fitted in a part of the terminal TR1 and is surrounded by the terminal TR1. In other words, the terminal TR2 is included in the terminal TR1.

Further, the center of the circle of the terminal TR1 forms the center of the rotating member RM, coincides with the center of the circle of the rotating shaft AR, and is represented as the center CC1. However, the center CC2 of the circle of the terminal TR2 is the terminal TR1. And the center CC1 of each circle of the rotation axis AR is deviated.

In the case of such a rotating member RM, the place where the terminal TR2 comes into direct contact with the holder 50 is only the place where the contact points of the terminal TR1 and the terminal TR2 match with the holder 50 as a tangent, and the terminal TR1 is mostly in rotation. Is in direct contact with the holder 50. Further, each time the rotating member RM rotates, the current path from the rotating shaft AR to the holder 50 changes continuously. That is, the value of the combined resistance component composed of the resistance component R1 of the terminal TR1 and the resistance component R2 of the terminal TR2 changes continuously. Therefore, also in the second modification, when the retarding voltage 31 is applied, the steep movement of electric charges in the power supply line can be suppressed, and the reliability of the charged particle beam device 1 can be improved.

(Embodiment 4)
The semiconductor device according to the fourth embodiment will be described below with reference to FIG. In the following description, the differences from the first embodiment will be mainly described. FIG. 14 is a plan view showing the structure around the stage 60 (sample table 20) in the fourth embodiment.

As shown in FIG. 14, the sample table 20 is provided with a rail 80 so as to extend along the transport path A1. The rail 80 is provided with a plurality of bearings 81a and 81b. When the holder transport robot 161 performs the loading and unloading operations 210 of the holder 50, the holder 50 on which the sample 10 is mounted passes through the transport path A1 while contacting the plurality of bearings 81a and 81b.

Here, the plurality of bearings 81a are made of an insulating material and are provided in the fixed region A3, while the plurality of bearings 81b are made of a conductive material and are provided in the moving region A2. In the moving region A2, the plurality of bearings 81b constitute the electrode EL3 included in the terminal TR3 or the electrode EL2 included in the terminal TR2.

As the structure of the terminal TR1 in the fourth embodiment, the same structure as any of the structures in the first to third embodiments including the first modification and the second modification can be adopted.

As described above, the contact with the holder 50 is not limited to the bottom surface of the holder 50, and may be performed on the side surface of the holder 50. Also in the fourth embodiment, substantially the same effect as that of the first embodiment can be obtained.

Further, in the fourth embodiment, the plurality of bearings 81b serve both as a guide member in the loading and unloading operation 210 and as a part of terminals for introducing the retarding voltage 31. Therefore, the space for providing the terminals TR2 and TR3 can be omitted.

Further, the sample table 20 is provided with a pair of rails 80 and a plurality of bearings 81a and 81b so as to come into contact with both side surfaces of the holder 50. Therefore, the contact between the terminal TR2 and the holder 50 and the contact between the terminal TR3 and the holder 50 are duplicated, so that the reliability of mutual contact can be improved.

Although the invention of the present application has been specifically described above based on the embodiment, the invention of the present application is not limited to the above-described embodiment and can be variously modified without departing from the gist thereof.

1 charged particle beam device 10 sample 20 sample table 30 retarding power supply 31 retarding voltage 32 output capacitance 33 resistance element (output resistance element, current suppression element)
40 High-voltage cable for vacuum 41 High-voltage cable for atmosphere 42 Resistance component of cable 43 Induction component of cable 44 Resistance component of cable 45 Capacity component of cable 46 Connector 50 Holder 51 Capacity component of holder 60 Stage 70 Positioning mechanism 80 Rail 81a Bearing (Insulation material)
81b bearing (conductive material)
101 Control unit 110 Electron source (charged particle source)
111 Conversion electrode 112 Detector 113 Scanning deflector 114 Electronic lens 161 Holder transfer robot 171 Sample room 172 Preparation room 173 Doorway 174 Doorway 203 Sample transfer robot 210 Loading and unloading operation AR Rotating shaft BS bases CC, CC1, CC2 Center of circle CEL Common electrode EB1 Electron beam (charged particle beam)
EB2 Secondary electrons EL1 to EL3 Electrodes R1 to R3 Resistance components RE1 to RE3 Resistance element RM Rotating member TH holes TR1 to TR3 terminals

Claims (15)

With a charged particle source,
A stage provided inside the sample chamber and on which a holder holding the sample can be installed,
The first terminal and the second terminal provided on the stage, and
A first power source provided outside the sample chamber and capable of supplying a negative voltage,
A first cable provided inside the sample chamber and electrically connected to the first power supply, the first terminal, and the second terminal.
Have,
The first sheet resistance of the first conductive material contained in the first terminal is larger than the third sheet resistance of the third conductive material contained in the first cable.
A charged particle beam device in which the second sheet resistance of the second conductive material contained in the second terminal is larger than the third sheet resistance and different from the first sheet resistance. In the charged particle beam apparatus according to claim 1,
The first terminal is
The first electrode provided on the surface of the stage and
A first resistance element that is electrically connected to the first electrode and the first cable and is provided between the first electrode and the first cable.
Have,
The second terminal is
A second electrode provided on the surface of the stage, which is different from the first electrode,
A second resistance element that is electrically connected to the second electrode and the first cable and is provided between the second electrode and the first cable.
Have,
The first conductive material is a conductive material constituting the first resistance element.
The second conductive material is a charged particle beam device which is a conductive material constituting the second resistance element. In the charged particle beam apparatus according to claim 1,
The first terminal is made of the first conductive material provided on the surface of the stage.
The second terminal is a charged particle beam device made of the second conductive material provided on the surface of the stage, which is different from the first terminal. In the charged particle beam apparatus according to claim 1,
A part of the stage constitutes a transport path for transporting the holder.
The first terminal and the second terminal are provided in the transport path.
The transport path includes a fixed area for fixing the holder to the stage.
When the holder is transported by the transport path, the first terminal is a charged particle beam device that contacts the holder in the fixed region. In the charged particle beam apparatus according to claim 4,
When the holder is conveyed by the transfer path, the second terminal contacts the holder before the holder reaches the fixed area, and contacts the holder after the holder reaches the fixed area. Not a charged particle beam device. In the charged particle beam apparatus according to claim 4,
When the holder is transported by the transport path, at least in the period from the time when the holder is installed in the transport path until the holder reaches the fixed region, the holder is connected to the first terminal and the second terminal. Is a charged particle beam device to which the negative voltage is applied from the first power source. In the charged particle beam apparatus according to claim 6,
When the sample is analyzed inside the sample chamber with the holder fixed to the fixed region, the charged particle beam emitted from the charged particle source irradiates the sample, and the charged particle beam of the charged particle beam is irradiated. A charged particle beam device in which the negative voltage is applied to the holder from the first power source via the first terminal during the irradiation period. In the charged particle beam apparatus according to claim 4,
The fixed region is provided with a rotating member that is electrically connected to the first cable and has a circular cross-sectional shape.
The first terminal is made of the first conductive material that is a part of the rotating member.
The second terminal is a charged particle beam device made of the second conductive material which is another part of the rotating member. In the charged particle beam apparatus according to claim 8,
The first terminal is formed along a part of the circumference of the rotating member.
The second terminal is a charged particle beam device formed along the other part of the circumference of the rotating member. In the charged particle beam apparatus according to claim 8,
The cross-sectional shape of each of the first terminal and the second terminal is circular.
The cross-sectional area of the second terminal is smaller than the cross-sectional area of the first terminal.
The second terminal is included in the first terminal.
A charged particle beam device in which the center of the circle of the second terminal is deviated from the center of the circle of the first terminal. In the charged particle beam apparatus according to claim 8,
The stage has a sample table located on the electron source side.
In the fixed region, the sample table is provided with a hole penetrating the sample table.
The rotating member is a charged particle beam device provided inside the hole. In the charged particle beam apparatus according to claim 4,
The stage is provided with rails so as to extend along the transport path.
The rail is provided with a plurality of bearings.
The second terminal is
A second electrode composed of at least one of the plurality of bearings,
A second resistance element that is electrically connected to the second electrode and the first cable and is provided between the second electrode and the first cable.
Have,
The second conductive material is a charged particle beam device which is a conductive material constituting the second resistance element. In the charged particle beam apparatus according to claim 1,
Further having a third terminal provided on the stage
A charged particle beam device in which the fourth sheet resistance of the fourth conductive material contained in the third terminal is larger than the third sheet resistance and different from the second sheet resistance. It is a stage where a holder holding a sample for analysis by a charged particle beam device can be installed.
A transport path for transporting the holder and
A fixed area that is a part of the transport path and for fixing the holder to the stage.
The first terminal provided in the transport path and
The second terminal provided in the transport path and
Have,
The first sheet resistance of the first conductive material contained in the first terminal is different from the second sheet resistance of the second conductive material contained in the second terminal.
When the holder is transported by the transport path, the first terminal contacts the holder in the fixed region, a stage. In the stage according to claim 14.
When the holder is transported by the transport path, the second terminal contacts the holder before the holder reaches the fixed region, and does not contact the holder after the holder reaches the fixed region.

Images