JP2020173693A - Touch sensor - Google Patents

Abstract

To increase a ratio of a sensing region effective for sensing in a touch sensor.SOLUTION: Provided is a touch sensor 100 formed by superposing, on each other: a plurality of transmitter electrodes Tx which are arranged in parallel; a plurality of receiver electrodes Rx which are arranged in parallel so as to cross the transmitter electrodes Tx through an insulating layer 10; and a wire L which is arranged with respect to the transmitter electrodes Tx and the receiver electrodes Rx through an insulating layer 14c and which is connected to either one of the transmitter electrodes Tx and the receiver electrodes Rx through a contact hole C provided in the insulating layer 14c.SELECTED DRAWING: Figure 1

Description

The present invention relates to a narrow-edged touch sensor.

In recent years, a touch sensor for detecting the touch of a fingertip has been used as a fingerprint sensor for security or the like. The fingerprint sensor is configured as a capacitive touch sensor that detects peak and valley patterns on the skin of the user's finger. That is, the change in capacitance induced by the "peak" or "valley" of the finger placed on the plate of the capacitive sensing element consisting of the transmitter electrodes arranged in parallel and the receiver electrodes intersecting them is detected as a received signal. To do.

FIG. 7 shows an example of the conventional touch sensor 200. The touch sensor 200 is composed of a plurality of transmitter electrodes Tx arranged in parallel in the sensing region 202, and a plurality of receiver electrodes Rx arranged in parallel so as to intersect with each other with an insulating layer interposed therebetween. At least two sides of the peripheral edge of the sensing region 202, which are the ends of the transmitter electrode Tx and the receiver electrode Rx, need to be provided with a peripheral region 204 in which the wiring L connected to the transmitter electrode Tx and the receiver electrode Rx is arranged. Further, as shown in FIG. 8, in the case where the driver element DR for controlling the potential of the transmitter electrode Tx is arranged around the sensing region 202 or the multiplexer MP for selecting the receiver electrode Rx is arranged. There is also.

JP-A-2015-201164

As described above, in the conventional touch sensor 200, it is necessary to provide peripheral regions 204 for arranging wiring and peripheral elements on at least two sides of the peripheral edge of the sensing region 202, and these peripheral regions 204 are insensitive to the sensor. .. For example, when the transmitter electrode Tx and the receiver electrode Rx are arranged at intervals of 50 μm each, if the sensing area 202 of the touch sensor 200 is 1 cm × 1 cm, it is necessary to wire 200 transmitter electrodes Tx and 200 receiver electrodes Rx each. is there. Here, when the wiring L with respect to the transmitter electrode Tx has a line width of 20 μm and an interval of 20 μm, the width of the peripheral region 204 required for arranging the wiring L is about 0.8 cm. The same applies to the receiver electrode Rx. Therefore, it was not possible to increase the ratio of the area of the sensing region 202 where sensing is effective to the area of the entire touch sensor 200.

One embodiment of the present invention comprises a plurality of transmitter electrodes arranged in parallel, a plurality of receiver electrodes arranged in parallel with respect to the transmitter electrode via a first insulating layer, and the transmitter. With a wiring arranged with respect to the electrode and the receiver electrode via a second insulating layer and connected to at least one of the transmitter electrode and the receiver electrode via a contact hole provided in the second insulating layer. , Is a touch sensor characterized by being configured by laminating.

Here, it is preferable that the peripheral region from which the wiring is pulled out is provided only on one side of the sensing region where the transmitter electrode and the receiver electrode are arranged and where sensing is effective.

Further, it is preferable that the peripheral region is bent or folded back with respect to the sensing region.

Further, it is preferable that a shield layer composed of the second insulating layer, the conductive layer and the third insulating layer is provided between the wiring and the transmitter electrode and the receiver electrode.

Further, it is preferable that the multiplexer for selecting the receiver electrode is formed in the same layer as the wiring.

Further, it is preferable that the selector for selecting the transmitter electrode is formed in the same layer as the wiring.

Further, it is preferable that a driver for applying a voltage to the transmitter electrode is formed in the same layer as the wiring.

Another aspect of the present invention is to stack a plurality of transmitter electrodes arranged in parallel and a plurality of receiver electrodes arranged in parallel so as to intersect the transmitter electrode via a first insulating layer. A first peripheral region from which the wiring connected to the transmitter electrode is pulled out is provided only on one side of the sensing region in which the transmitter electrode and the receiver electrode are arranged and the sensing is effective. A second peripheral region from which the wiring connected to the receiver electrode is pulled out is provided only on the other side different from the one side of the region, and the first peripheral region and the second peripheral region are It is a touch sensor characterized in that it is bent or folded back with respect to the sensing region.

According to the present invention, it is possible to increase the proportion of the sensing region in which sensing is effective in the touch sensor.

It is an exploded perspective view which shows the structure of the touch sensor in embodiment of this invention. It is sectional drawing which shows the structure of the touch sensor in embodiment of this invention. It is a flowchart which shows the manufacturing method of the touch sensor in embodiment of this invention. It is an exploded perspective view which shows the structure of the touch sensor in the modification 1. It is an exploded perspective view which shows the structure of the touch sensor in the modification 2. It is a perspective view which shows the structure of the touch sensor in the modification 3. It is a perspective view which shows the structure of the conventional touch sensor. It is a perspective view which shows the structure of the conventional touch sensor.

The touch sensor 100 according to the embodiment of the present invention has a transmitter electrode Tx, an insulating layer 10, a receiver electrode Rx, a shield layer 12, a wiring L, and a substrate 14 as shown in an exploded perspective view of FIG. 1 and a sectional view of FIG. And a protective layer 16 are included.

In order to clearly illustrate the structure, FIG. 1 shows a structure in which the touch sensor 100 is divided into a plurality of layers. That is, the touch sensor 100 has a structure in which the layers separately displayed in FIG. 1 are overlapped. Further, in order to clearly illustrate the structure, FIG. 1 shows a configuration excluding the protective layer 16.

The touch sensor 100 senses the fingertip of the user when the fingertip touches the user and outputs the signal. Signal detection by the touch sensor 100 is based on voltage amplitude, signal phase shift, and other methods. For example, when the touch sensor 100 is used as a fingerprint sensor, the change in the signal due to the peaks and valleys of the skin in the fingerprint of the fingertip is detected.

In the touch sensor 100, the region excluding the peripheral region 104 on the end side of the line AA of the substrate 14 is the sensing region 102 effective for detecting the fingertip.

The transmitter electrode Tx and the receiver electrode Rx are arranged so as to face each other via the insulating layer 10. A plurality of transmitter electrodes Tx are arranged in parallel along one direction (X direction) in the sensing region 102 of the touch sensor 100. A plurality of receiver electrodes Rx are arranged in parallel in the sensing region 102 of the touch sensor 100 along the direction intersecting the transmitter electrode Tx. For example, the transmitter electrode Tx is arranged along a direction (Y direction) orthogonal to the receiver electrode Rx.

The transmitter electrode Tx and the receiver electrode Rx are made of a conductive material. For example, the transmitter electrode Tx and the receiver electrode Rx can be made of a metal such as aluminum or a transparent conductive material such as ITO. Specifically, the transmitter electrode Tx and the receiver electrode Rx can be, for example, aluminum (Al) having a thickness of several tens of nm or more and several hundreds of nm or less. The insulating layer 10 is made of an electrically insulating material. For example, the insulating layer 10 can be made of a resin material such as acrylic, polyimide, or polyethylene. Specifically, the insulating layer 10 can be made of, for example, an acrylic resin having a film thickness of about 1000 nm or more and 1 μm or less.

An electrical capacitance is formed at the intersection of the transmitter electrode Tx and the receiver electrode Rx, and each intersection forms one pixel in the touch sensor 100. When a voltage is applied to the transmitter electrode Tx, an electric charge is generated in the receiver electrode Rx due to capacitive coupling. When the user's fingertip is touching the touch sensor 100, the capacitance between the transmitter electrode Tx and the receiver electrode Rx changes according to the unevenness of the skin of the user's fingertip, so that the potential of the transmitter electrode Tx is changed. The amount of charge generated in the receiver electrode Rx at that time also changes. Therefore, the fingerprint pattern of the fingertip can be detected by sequentially applying a voltage to the transmitter electrode Tx and detecting a change in the amount of charge generated in the receiver electrode Rx at that time.

When the touch sensor 100 is used as a fingerprint sensor, it is preferable that the transmitter electrodes Tx are arranged at intervals of several tens of μm. Further, it is preferable that the receiver electrodes Rx are also arranged at intervals of several tens of μm. For example, the transmitter electrode Tx and the receiver electrode Rx are arranged at intervals of 50 μm, respectively. When the touch sensor 100 is configured to have a fingerprint detection effective area of 1 cm × 1 cm, it is necessary to wire 200 transmitter electrodes Tx and 200 receiver electrodes Rx each.

In the touch sensor 100, the wiring L for the transmitter electrode Tx, the insulating layer 10 and the receiver electrode Rx has a three-dimensional wiring structure via the shield layer 12. That is, the wiring L is arranged in the lower layer portion of the transmitter electrode Tx and the receiver electrode Rx in the sensing region 102 with the shield layer 12 interposed therebetween. The shield layer 12 is provided to block the electrical coupling between the wiring L and the transmitter electrode Tx and the receiver electrode Rx.

As shown in FIG. 2, the shield layer 12 has a laminated structure in which both sides of the conductive layer 12b are sandwiched between the insulating layers 12a and 12c. The insulating layers 12a and 12c are not particularly limited as long as they are electrically insulating materials, but can be formed of, for example, a silicon oxide film (SiO ₂ ), a silicon nitride film (SiNx), or the like. The film thickness of the insulating layers 12a and 12c is not particularly limited, but it is preferably 100 nm or more and 1000 nm or less. The conductive layer 12b is not particularly limited as long as it is a conductive material, but can be made of a transparent conductive material such as ITO. The film thickness of the conductive layer 12b is not particularly limited, but is preferably several tens of nm or more and several hundreds of nm or less. The conductive layer 12b is maintained at a predetermined potential by the wiring L.

The substrate 14 is a member for forming the wiring L connected to the transmitter electrode Tx, the receiver electrode Rx, and the conductive layer 12b of the shield layer 12 on the surface. The substrate 14 is not particularly limited as long as it is an electrically insulating material, but can be made of, for example, a resin material such as glass, ceramic, acrylic, polyimide, or polyethylene.

The wiring L is provided for the transmitter electrode Tx, the receiver electrode Rx, and the conductive layer 12b, respectively. The wiring L is not particularly limited as long as it is a conductive material, but can be made of, for example, a metal such as aluminum, a transparent conductive material such as ITO, or the like. The wiring L is electrically connected to the transmitter electrode Tx and the conductive layer 12b via the contact hole C provided in the shield layer 12. Further, the wiring L is electrically connected to the receiver electrode Rx via the contact holes C provided in the shield layer 12 and the insulating layer 10.

A predetermined voltage is applied to the wiring L connected to the transmitter electrode Tx from an external control circuit. Further, the wiring L connected to the receiver electrode Rx is sequentially selected by an external selection circuit, and the fingerprint pattern of the fingertip can be detected by detecting the change in the amount of charge generated in the selected receiver electrode Rx. ..

In the touch sensor 100, as shown in FIG. 1, the wiring L is configured to protrude from the sensing region 102 in the peripheral region 104 of the substrate 14 provided only on one side on the end side of the lines AA. As a result, the area of the peripheral region 104 that corresponds to the edge of the touch sensor 100 that is not the sensing region 102 can be reduced. Therefore, the ratio of the area of the sensing region 102 to the area of the entire touch sensor 100 can be increased.

Further, the touch sensor 100 may have a configuration in which the substrate 14 and the wiring L are bent or folded back at the line AA which is the boundary between the sensing region 102 and the peripheral region 104. At this time, the peripheral region 104 is bent or folded back in the direction opposite to the sensing detection surface of the touch sensor 100. As a result, only the sensing area 102 can be left on the surface side as a detection surface, and the peripheral area 104 corresponding to the frame portion can be bent or folded back, and the ratio of the area of the sensing area 102 to the area of the entire touch sensor 100 can be obtained. Can be made even larger.

The protective layer 16 is made of an electrically insulating material. The insulating layer 10 is not particularly limited, but can be formed of, for example, a silicon oxide film (SiO ₂ ), a silicon nitride film (SiNx), or the like. Specifically, it is preferable that the insulating layer 10 has a film thickness of about several hundred nm. The protective layer 16 can protect and flatten the surface of the touch sensor 100.

As described above, by using the touch sensor 100 in which the peripheral area corresponding to the frame portion is reduced, it is possible to detect fingerprints and the like in the defined sensing area 102. As a result, the fingerprint detection accuracy can be improved and the security can be improved. Further, since the sensing area 102 can be made large, fingerprint authentication can be performed without applying complicated control, and control can be performed by a control device having low performance, so that low cost and low power consumption can be realized.

[Production method]
Hereinafter, a method of manufacturing the touch sensor 100 will be described with reference to the flowchart of FIG.

In step S10, the wiring L is formed on the surface of the substrate 14. For example, a glass substrate is used as the substrate 14. A conductive material is formed on the surface of the substrate 14 as a wiring L having a thickness of several tens of nm or more and several hundred nm or less. For example, the wiring L is formed by forming aluminum with a thickness of 100 nm and processing it into a desired pattern by applying a technique such as etching.

In step S12, an insulating layer is formed on the substrate 14 and the wiring L for insulation and flattening. The insulating layer is used as the insulating layer 12a of the shield layer 12. The insulating layer 12a has a film thickness of 100 nm or more and 1000 nm or less. For example, a silicon oxide film (SiO ₂ ) is formed as an insulating layer 12a with a thickness of 500 nm. Further, by applying an existing mask technique such as lithography, a contact hole C for connecting the wiring L to the receiver electrode Rx, the transmitter electrode Tx, and the conductive layer 12b is formed at a predetermined position of the insulating layer 12a.

In step S14, a conductive layer for shielding is formed on the insulating layer 12a. The conductive layer is used as the conductive layer 12b of the shield layer 12. The conductive layer 12b has a thickness of several tens of nm or more and several hundred nm or less. For example, a transparent conductive material (ITO) is formed as a conductive layer 12b with a thickness of 100 nm. The conductive layer 12b is not formed around the contact hole C for connecting the receiver electrode Rx and the transmitter electrode Tx and the wiring L.

In step S16, an insulating layer is formed on the conductive layer 12b. The insulating layer is used as the insulating layer 12c of the shield layer 12. The insulating layer 12c has a film thickness of 100 nm or more and 1000 nm or less. For example, a silicon oxide film (SiO ₂ ) is formed as an insulating layer 12c with a thickness of 500 nm. Further, by applying an existing mask technique such as lithography, a contact hole C for connecting the wiring L to the receiver electrode Rx and the transmitter electrode Tx is formed at a predetermined position of the insulating layer 12c.

In step S18, the transmitter electrode Tx is formed on the shield layer 12. A conductive material having a thickness of several tens of nm or more and several hundred nm or less is formed as the transmitter electrode Tx. For example, aluminum is formed to a thickness of 100 nm to form a transmitter electrode Tx. The transmitter electrode Tx is processed by applying a technique such as etching so that a plurality of transmitter electrodes Tx are extended in parallel along a predetermined direction (X direction) as shown in FIG. Further, the transmitter electrode Tx is electrically connected to a desired wiring L via a contact hole C formed in the insulating layers 12a and 12c.

In step S20, the insulating layer 10 is formed on the shield layer 12 and the transmitter electrode Tx. A layer made of an insulating material having a film thickness of about 1000 nm or more and 1 μm or less is formed as the insulating layer 10. For example, an acrylic resin is formed to a thickness of 2000 nm to form an insulating layer 10. Further, by applying an existing mask technique such as lithography, a contact hole C for connecting the wiring L to the receiver electrode Rx is formed at a predetermined position.

In step S22, the receiver electrode Rx is formed on the insulating layer 10. A conductive material having a thickness of several tens of nm or more and several hundred nm or less is formed as the receiver electrode Rx. For example, aluminum is formed to a thickness of 100 nm to obtain a receiver electrode Rx. The receiver electrode Rx is processed by applying a technique such as etching so that a plurality of receiver electrodes Rx are extended in parallel along a direction (Y direction) intersecting with the transmitter electrode Tx as shown in FIG. Further, the receiver electrode Rx is electrically connected to the desired wiring L via the contact holes C formed in the insulating layers 12a and 12c and the insulating layer 10.

In step S24, the protective layer 16 is formed so as to cover the receiver electrode Rx. A layer made of an insulating material having a film thickness of about several hundred nm is formed as the protective layer 16. For example, a silicon oxide film (SiO ₂ ) is formed to have a thickness of 500 nm to form a protective layer 16.

In step S26, the periphery of the substrate 14 is bent at the line AA which is the boundary between the sensing region 102 and the peripheral region 104.

As described above, the touch sensor 100 according to the present embodiment can be formed.

[Modification 1]
FIG. 4 is a perspective view showing the configuration of the touch sensor 110 in the first modification. FIG. 4 shows an exploded perspective view of the touch sensor 110. Further, FIG. 4 shows a configuration in which the protective layer 16 is removed in order to clearly show the structure.

In the touch sensor 110, a multiplexer MP connected to the receiver electrode Rx is provided on the substrate 14. The multiplexer MP is provided to sequentially select any one of the wires L connected to the receiver electrode Rx. The multiplexer MP can be formed by applying an existing thin film transistor forming technique to the substrate 14.

Further, in the touch sensor 110, a selector SR and a driver DR are provided on the substrate 14 for each wiring L connected to the transmitter electrode Tx. The selector SR is provided to sequentially select any one of the wirings L connected to the transmitter electrode Tx. The driver DR is provided to apply a predetermined voltage to the transmitter electrode Tx selected by the selector SR. The selector SR and the driver DR can be formed by applying the existing thin film transistor forming technique to the substrate 14.

In the touch sensor 110, as shown in FIG. 4, the substrate 14 on which the wiring L, the multiplexer MP, the selector SR, and the driver DR are formed is located in the peripheral region 104 provided only on one side on the end side of the lines AA. The configuration is such that it extends beyond the sensing area 102. In the touch sensor 110, the area of the peripheral region 104 that corresponds to the frame portion other than the sensing region 102 can be reduced. Therefore, the ratio of the area of the sensing region 102 to the area of the entire touch sensor 110 can be increased.

Further, the touch sensor 110 may also have a configuration in which the periphery of the substrate 14 is bent or folded back at the line AA which is the boundary between the sensing region 102 and the peripheral region 104. At this time, the peripheral region 104 is bent or folded back in the direction opposite to the sensing detection surface of the touch sensor 110. As a result, only the sensing area of the touch sensor 110 can be left on the surface side, and the peripheral area 104 corresponding to the frame portion can be bent or folded back, and the sensing area in which sensing is effective for the entire area of the touch sensor 110 can be obtained. The ratio of the area of can be increased.

Although the touch sensor 110 is configured to arrange the multiplexer MP in the peripheral region 104, it may be configured to be arranged in the sensing region 102. In this case, a part of the multiplexer MP formed on the substrate 14 is superimposed on the receiver electrode Rx and the transmitter electrode Tx, but the three-dimensional laminated structure makes the sensing area 102 in the touch sensor 110 effective. It does not reduce the area.

Further, in the touch sensor 110, the selector SR and the driver DR are arranged in the sensing area 102, but at least a part of the selector SR and the driver DR may be arranged in the peripheral area 104. In this case, even if the selector SR and the driver DR are arranged in the peripheral area 104 provided only on one side on the end side of the line AA, the effective area of the sensing area 102 in the touch sensor 110 is not narrowed.

By integrating at least one of the multiplexer MP, the selector SR, and the driver DR in the same layer as the wiring L in this way, the number of connection points between these peripheral elements and the transmitter electrode Tx and the receiver electrode Rx can be significantly reduced. It is possible to improve the reliability and reduce the manufacturing cost.

[Modification 2]
FIG. 5 is a perspective view showing the configuration of the touch sensor 120 in the second modification. FIG. 5 shows an exploded perspective view of the touch sensor 120. Further, FIG. 4 shows a configuration in which the protective layer 16 is removed in order to clearly show the structure.

In the touch sensor 120, a contact hole C for connecting the transmitter electrode Tx and the wiring L is provided at the end of the sensing region 102 for all the transmitter electrodes Tx. The wiring L connected to the transmitter electrode Tx extends to the peripheral region 104 provided on one side of the substrate 14.

By arranging the contact hole C for connecting the transmitter electrode Tx and the wiring L at the end of the sensing region 102 in this way, the touch sensor 120 can be applied even if a coarse alignment technique such as a metal mask is applied. Has the advantage of being able to manufacture.

Further, the touch sensor 120 may also have a configuration in which the periphery of the substrate 14 is bent or folded back at the line AA which is the boundary between the sensing region 102 and the peripheral region 104. At this time, the peripheral region 104 is bent or folded back in the direction opposite to the sensing detection surface of the touch sensor 120. As a result, only the sensing area of the touch sensor 120 can be left on the surface side, and the peripheral area 104 corresponding to the frame portion can be bent or folded back, and the sensing area in which sensing is effective for the entire area of the touch sensor 120 can be obtained. The ratio of the area of can be increased.

Further, in the above-described embodiment, the first modification and the second modification, the shield layer 12 provided with the conductive layer 12b is provided, but the shield layer 12 may not be provided. That is, without providing the conductive layer 12b and the insulating layer 12c of the shield layer 12, the insulating layer 12a maintains the insulation between the wiring L and the receiver electrode Rx and the transmitter electrode Tx, and at a predetermined position of the insulating layer 12a. Each wiring L may be connected to the receiver electrode Rx and the transmitter electrode Tx via the provided contact hole C.

In the configuration in which the conductive layer 12b is not provided in the shield layer 12, the conductive layer 12b may be formed in the same layer as the transmitter electrode Tx. That is, a conductive layer 12b may be formed between adjacent transmitter electrodes Tx, and the conductive layer 12b may be connected to the wiring L to maintain a predetermined potential. Even with such a configuration, noise from the wiring L and the like can be partially blocked by the conductive layer 12b.

[Modification 3]
FIG. 6 is a perspective view showing the configuration of the touch sensor 130 in the modified example 3. The touch sensor 130 has a structure in which a substrate 20 having a receiver electrode Rx formed on one surface and a substrate 22 having a transmitter electrode Tx formed on one surface are bonded together by an adhesive layer 24.

The receiver electrode Rx is formed on one surface of the substrate 20. The substrate 20 is not particularly limited as long as it is an electrically insulating material, but can be made of, for example, a resin material such as glass, ceramic, acrylic, polyimide, or polyethylene. Similar to the touch sensor 100, a plurality of receiver electrodes Rx are arranged in parallel along a predetermined direction (Y direction) in the sensing region 102 of the touch sensor 130. A wiring L connected to the end of the receiver electrode Rx is also formed on one surface of the substrate 20.

The transmitter electrode Tx is formed on one surface of the substrate 22. The substrate 22 is not particularly limited as long as it is an electrically insulating material, but can be made of, for example, a resin material such as glass, ceramic, acrylic, polyimide, or polyethylene. Similar to the touch sensor 100, a plurality of transmitter electrodes Tx are arranged in parallel along the direction (X direction) intersecting the receiver electrode Rx in the sensing region 102 of the touch sensor 130. Wiring L connected to the end of the transmitter electrode Tx is also formed on one surface of the substrate 22.

The substrate 20 and the substrate 22 are bonded together by the adhesive layer 24 so that the receiver electrode Rx formed on the substrate 20 and the transmitter electrode Tx formed on the substrate 22 face each other. The adhesive layer 24 is not particularly limited, but can be formed by an adhesive containing an insulating resin material such as acrylic, polyimide, or polyethylene.

The laminated structure of the substrate 20 on which the receiver electrode Rx is formed and the substrate 22 on which the transmitter electrode Tx is formed is not particularly limited, and the receiver electrode Rx and the transmitter electrode Tx are laminated via an insulating layer. It may be configured as such.

In this way, the touch sensor 130 in which the transmitter electrode Tx and the receiver electrode Rx are opposed to each other via the insulating adhesive layer 24 can be formed.

In the touch sensor 130, as shown in FIG. 6, the substrate 20 has a configuration that protrudes from the sensing region in a peripheral region provided only on one side on the end side of the line AA. Further, the substrate 22 has a configuration that protrudes from the sensing region in a peripheral region provided only on one side on the end side of the line BB. As a result, the area of the peripheral region corresponding to the edge portion of the touch sensor 130 that is not the sensing region can be reduced. Therefore, the ratio of the area of the sensing region to the area of the entire touch sensor 130 can be increased.

Further, the touch sensor 130 may have a configuration in which the substrate 20 or the substrate 22 is bent or folded back at at least one of the lines AA and BB which are the boundaries between the sensing region and the peripheral region. At this time, the touch sensor 130 is bent or folded back in the direction opposite to the sensing detection surface of the touch sensor 130. As a result, only the sensing region can be left on the surface side as the detection surface, and the peripheral region corresponding to the frame portion can be bent or folded back, and the ratio of the area of the sensing region to the total area of the touch sensor 130 can be further increased. can do.

10 Insulation layer, 12 Shield layer, 12a, 12c Insulation layer, 12b Conductive layer, 14 substrate, 14c insulation layer, 16 Protective layer, 20 substrate, 22 substrate, 24 adhesive layer, 100, 110, 120, 130, 200 touch sensor , 102, 202 sensing area, 104, 204 peripheral area.

Claims (8)

With multiple transmitter electrodes arranged in parallel,
A plurality of receiver electrodes arranged in parallel so as to intersect the transmitter electrode via the first insulating layer,
It is arranged with respect to the transmitter electrode and the receiver electrode via a second insulating layer, and is connected to at least one of the transmitter electrode and the receiver electrode via a contact hole provided in the second insulating layer. Wiring and
A touch sensor characterized by being composed of laminated layers. The touch sensor according to claim 1.
A touch sensor characterized in that a peripheral region from which the wiring is drawn out is provided only on one side of a sensing region in which the transmitter electrode and the receiver electrode are arranged and where sensing is effective. The touch sensor according to claim 2.
A touch sensor characterized in that the peripheral region is bent or folded with respect to the sensing region. The touch sensor according to any one of claims 1 to 3.
A touch sensor characterized in that a shield layer composed of the second insulating layer, the conductive layer, and the third insulating layer is provided between the wiring and the transmitter electrode and the receiver electrode. The touch sensor according to any one of claims 1 to 4.
A touch sensor characterized in that a multiplexer for selecting the receiver electrode is formed in the same layer as the wiring. The touch sensor according to any one of claims 1 to 5.
A touch sensor characterized in that a selector for selecting the transmitter electrode is formed in the same layer as the wiring. The touch sensor according to any one of claims 1 to 6.
A touch sensor characterized in that a driver for applying a voltage to the transmitter electrode is formed in the same layer as the wiring. With multiple transmitter electrodes arranged in parallel,
A plurality of receiver electrodes arranged in parallel so as to intersect the transmitter electrode via the first insulating layer,
Is constructed by stacking
A first peripheral region from which the wiring connected to the transmitter electrode is pulled out is provided only on one side of the sensing region in which the transmitter electrode and the receiver electrode are arranged and where sensing is effective, and the side of the sensing region Is provided with a second peripheral region from which the wiring connected to the receiver electrode is drawn out only on one different side.
A touch sensor characterized in that the first peripheral region and the second peripheral region are bent or folded with respect to the sensing region.

Images