JP2020091429A - Forming method, system, lithography device, manufacturing method of article, and program - Google Patents

Abstract

To provide a technique advantageous for improving the formation accuracy of a pattern.SOLUTION: A forming method for forming a patter on one layer on a substrate using a first device and a second device includes: a first measurement step of measuring a position of a mark formed on the substrate under a coordinate system of the first device; a first forming step of forming a first pattern on the substrate under the coordinate system of the first device, on the basis of first information indicating a target position coordinate to form the first pattern; a second measurement step of measuring a position of the mark under a coordinate system of the second device; and a second forming step of forming a second pattern on the substrate under the coordinate system of the second device, on the basis of second information indicating a target position coordinate to form the second pattern. In the second forming step, a position of the second pattern formed on the substrate is determined on the basis of a difference between the position of the mark measured in the first measurement step and the position of the mark measured in the second measurement step.SELECTED DRAWING: Figure 7

Description

The present invention relates to a forming method, a system, a lithographic apparatus, a method for manufacturing an article, and a program for forming a pattern in one layer on a substrate.

In recent years, particularly in liquid crystal display devices, the size of the substrate has increased, and it is required to use the substrate without waste. Therefore, a technique called so-called MMG (Multi Model on Glass) has been proposed in which a plurality of devices of different sizes are formed on one substrate using a plurality of apparatuses (see Patent Document 1). In such an MMG technique, the dimensions and positions of the plurality of patterns formed in one layer on the substrate by the plurality of devices can be used as an evaluation index of pattern formation accuracy.

JP, 2005-092137, A

In a plurality of devices used in the MMG technology, individual characteristics may occur in the pattern formation characteristics. In this case, the positional relationship between the plurality of patterns formed by the plurality of devices deviates from the target value (design value), and it may be difficult to form the pattern on the substrate with high accuracy.

Therefore, an object of the present invention is to provide an advantageous technique for improving the pattern forming accuracy.

In order to achieve the above object, a forming method according to one aspect of the present invention is a forming method of forming a pattern on one layer on a substrate by using a first device and a second device. Based on the first measurement step of measuring the position of the mark formed on the substrate under the coordinate system of the apparatus, and the first information indicating the target position coordinates for forming the first pattern, the first measurement step is performed. A first forming step of forming the first pattern on the substrate under the coordinate system of the apparatus, and a second measuring step of measuring the position of the mark under the coordinate system of the second apparatus; A second forming step of forming the second pattern on the substrate under the coordinate system of the second device based on second information indicating target position coordinates for forming the second pattern, In the second forming step, the coordinate system of the second device is also calculated based on the difference between the position of the mark measured in the first measuring step and the position of the mark measured in the second measuring step. Is used to determine the position of the second pattern formed on the substrate.

Further objects and other aspects of the present invention will be made clear by the preferred embodiments described below with reference to the accompanying drawings.

According to the present invention, it is possible to provide an advantageous technique for improving the pattern forming accuracy, for example.

It is a schematic diagram showing the whole composition of a formation system. It is a figure which shows the structural example of a 1st exposure apparatus. It is a figure which shows the 1st pattern P1, the 2nd pattern P2, and the mark AM formed on the board|substrate. FIG. 11 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 1. FIG. 11 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 2. FIG. 11 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 3. It is a flowchart which shows the pattern formation process on a board|substrate. FIG. 9 is a schematic diagram showing a state in which a mark AM, a first pattern P1 and a second pattern P2 are formed on a substrate over time.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In each drawing, the same reference numeral is given to the same member or element, and the duplicated description will be omitted.

<First Embodiment>
The forming system 100 (forming apparatus) of the first embodiment according to the present invention will be described. The forming system 100 according to the present embodiment executes a so-called MMG (Multi Model on Glass) technique of forming patterns at different positions in one layer (same layer) on a substrate by using a plurality of lithography apparatuses. System. Examples of the lithographic apparatus include an exposure apparatus that exposes a substrate to transfer a mask pattern onto the substrate, an imprint apparatus that forms a pattern of an imprint material on the substrate by using a mold, and a charged particle beam on the substrate. A drawing device for forming a pattern can be used.

Further, the “one layer on the substrate” to which the MMG technology according to the present invention is applied may be, for example, a layer (so-called first layer) first formed on a bare substrate on which a pattern is not yet formed. However, the present invention is not limited to this, and may be the second layer or later. In the present embodiment, an example of forming a pattern (latent pattern) on one resist layer (photosensitive agent) on a substrate by using a forming system 100 having a plurality of exposure devices 10 will be described. Here, as the substrate W, for example, a glass plate or a semiconductor wafer can be applied, but in the present embodiment, an example in which the glass plate is used as the substrate W will be described. Further, hereinafter, “one layer on the substrate” may be simply referred to as “on the substrate”.

FIG. 1 is a schematic diagram showing the overall configuration of the forming system 100 of the first embodiment. The forming system 100 may include a first exposure apparatus 10 (first apparatus), a second exposure apparatus 20 (second apparatus), a transport unit 30, and a main control unit 40. The transport unit 30 transports the substrate W to the first exposure apparatus 10 and the second exposure apparatus 20. The main control unit 40 is composed of, for example, a computer having a CPU and a memory, controls the entire formation system 100 in a centralized manner, and stores data and information between the first exposure apparatus 10 and the second exposure apparatus 20. You can control the transfer.

The first exposure apparatus 10 may include, for example, a pattern forming unit 11 (first forming unit), a mark forming unit 12, a mark measuring unit 13 (first measuring unit), and a control unit 14. The pattern forming unit 11 forms the first pattern P1 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 11 forms the first pattern P1 in the first area on the substrate based on the first information (for example, design data) indicating the target position coordinates for forming the first pattern P1. The mark forming unit 12 forms the alignment mark on the substrate based on the information (for example, design data) indicating the target position coordinates for forming the alignment mark. The mark measuring unit 13 measures the position of the alignment mark formed by the mark forming unit 12. The control unit 14 is composed of, for example, a computer having a CPU, a memory, and the like, and controls the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 according to the apparatus coordinate system (that is, each process by the first exposure apparatus 10 Control). In the present embodiment, the control unit 14 is provided as a separate body from the main control unit 40, but may be provided as a component of the main control unit 40.

The second exposure apparatus 20 can include, for example, a pattern forming unit 21 (second forming unit), a mark measuring unit 23 (second measuring unit), and a control unit 24. In the second exposure apparatus 20 of the present embodiment, the mark forming section is not provided, but the mark forming section may be provided. The pattern forming unit 21 forms the second pattern P2 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 21 is on a substrate different from the first region in which the first pattern P1 is formed, based on the second information (for example, design data) indicating the target position coordinates for forming the second pattern P2. The second pattern P2 is formed in the second region. The mark measuring unit 23 measures the position of the mark AM formed by the mark forming unit 12 of the first exposure apparatus 10. The control unit 24 is configured by a computer having, for example, a CPU and a memory, and controls the pattern forming unit 21 and the mark measuring unit 23 according to the device coordinate system (that is, controls each process by the second exposure device 20). In the present embodiment, the control unit 24 is provided as a separate body from the main control unit 40, but may be provided as a component of the main control unit 40.

Next, a specific configuration example of the first exposure apparatus 10 will be described. FIG. 2 is a diagram showing a configuration example of the first exposure apparatus 10. Here, the second exposure device 20 is different from the first exposure device 10 in that the mark forming portion 12 is not provided, but other configurations may be the same. That is, the pattern forming unit 21 and the mark measuring unit 13 of the second exposure apparatus 20 can be configured similarly to the pattern forming unit 11 and the mark forming unit 23 of the first exposure apparatus 10, respectively.

The first exposure apparatus 10 can include, as the pattern forming unit 11, an illumination optical system 11b, a mask stage 11c, a projection optical system 11d, and a substrate stage 11e. The illumination optical system 11b illuminates the mask M using the light from the light source 11a. The mask stage 11c is configured to be movable while holding the mask M. The projection optical system 11d projects the pattern formed on the mask M onto the substrate W. The substrate stage 11e is configured to be movable while holding the substrate W. In the first exposure apparatus 10 configured as described above, the mask M and the substrate W are respectively arranged at optically conjugate positions (the object plane and the image plane of the projection optical system 11d) via the projection optical system 11d, The pattern of the mask M is projected onto the substrate by the projection optical system 11d. Thereby, a latent pattern can be formed in the resist layer on the substrate.

Further, the first exposure apparatus 10 shown in FIG. 2 is provided with the above-mentioned mark forming unit 12 and mark measuring unit 13. The mark forming unit 12 is also called an MF (Mark Former), and forms an alignment mark on the substrate by irradiating the substrate with energy such as a charged particle beam. Hereinafter, the alignment mark formed on the substrate by the mark forming unit 12 may be referred to as “mark AM”. The mark measuring unit 13 measures the position of the mark AM by detecting the mark AM formed on the substrate by the mark forming unit 12. For example, the mark measuring unit 13 includes a scope (off-axis scope) having an image sensor and an optical element, and based on the position of the substrate W (XY directions) and the position of the mark AM in the visual field of the scope, The position of the mark AM can be measured.

[Regarding pattern formation accuracy]
Next, the formation of the first pattern P1, the second pattern P2, and the mark AM on the substrate by the forming system 100 (first exposure device 10 and second exposure device 20) will be described. FIG. 3 is a diagram showing the first pattern P1, the second pattern P2, and the mark AM formed on the substrate by the forming system 100.

The first pattern P1 can be formed in the first region on the substrate by the pattern forming unit 11 of the first exposure apparatus 10. The second pattern P2 may be formed by the pattern forming unit 21 of the second exposure device 20 in a second region on the substrate different from the first region in which the first pattern P1 is formed. In the example shown in FIG. 3, the first pattern P1 and the second pattern P2 are formed on the substrate one by one with the same size (size), but the present invention is not limited to this, and may have different sizes and numbers.

Further, the marks AM are formed by the mark forming unit 12 of the first exposure apparatus 10 at a plurality of places in regions different from the regions (first region, second region) where the first pattern P1 and the second pattern P2 are formed. Can be done. In the example shown in FIG. 3, the three marks AM1 to AM3 are formed near the corners of the substrate W so as not to be arranged on the same straight line. When the three marks AM1 to AM3 are formed on the substrate in this way, the X direction shift, the Y direction shift, the rotation, the X direction magnification, and the Y direction magnification are based on the measurement results of the positions of the three marks AM1 to AM3. Can be asked.

Here, the pattern forming accuracy by the forming system 100 (MMG technology) can be evaluated based on the size and position of the entire pattern formed on the substrate. The size of the entire pattern formed on the substrate can be defined by, for example, a first index TP (Total Pitch) that represents the length of a diagonal line in the entire pattern formed on the substrate. In this embodiment, the lower right end point EP1 of the first pattern P1 formed on the substrate by the first exposure apparatus 10 and the upper left end point EP2 of the second pattern P2 formed on the substrate by the second exposure apparatus 20. The length of the straight line connecting the and can be determined as the first index TP. On the other hand, the position of the entire pattern formed on the substrate can be defined by, for example, a second index CS (Center Shift) indicating the position of the center point of the entire pattern formed on the substrate. In the present embodiment, the center point of the straight line connecting the end points EP1 and EP2 can be determined as the second index CS.

[Problems in conventional pattern formation]
In the forming system 100 having a plurality of devices (first exposure device 10 and second exposure device 20), on the substrate, the first index TP and the second index CS described above are each within an allowable range (desired range). It is required to form a pattern on the. In the conventional method, in each of the first exposure apparatus 10 and the second exposure apparatus 20, the position of the mark AM formed on the substrate is measured, and the pattern (first pattern P1, second pattern) is measured based on the measurement result. P2) was formed on the substrate. However, the accuracy of forming the mark AM by the mark forming unit 12 is insufficient, and the mark AM may not be formed at the target position coordinates (design position) on the substrate. Therefore, if a pattern is formed on the substrate based on the measurement result of the position of the mark AM, it is difficult to accurately form the pattern on the substrate according to the formation accuracy of the mark AM, as shown in the following conventional example. Can be.

Conventional example 1
FIG. 4 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 1. In Conventional Example 1, as shown in FIG. 4A, an example is shown in which three marks AM1 to AM3 are formed on the substrate while being shifted in one direction from the target position coordinates T _AM . In this case, in the first exposure apparatus 10, the marks AM1 to AM3 and the first pattern P1 have a target positional relationship (for example, a positional relationship in design data) based on the measurement result of the positions of the marks AM1 to AM3. Thus, the first pattern P1 is formed (FIG. 4B). Further, in the second exposure apparatus 20, the second pattern P2 is formed based on the measurement result of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the second pattern P2 have the target positional relationship (FIG. 4(c)). In this example, the first pattern P1 and the second pattern P2 are formed on the substrate by shifting from the target position coordinates T _P1 and T _P2 depending on the shift of the marks AM1 to AM3 from the target position coordinate T _AM. It will be. That is, in this example, the first index TP as the size of the entire pattern can be within the allowable range, but the second index CS as the position of the entire pattern cannot be within the allowable range.

Conventional example 2
FIG. 5 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 2. In the conventional example 2, as shown in FIG. 5A, the marks AM1 to AM2 on the +Y direction side are formed on the substrate by shifting in the +Y direction from the target position coordinate T _AM, and the mark AM3 on the −Y direction side. but shows an example formed on the substrate are shifted in the -Y direction from the target location coordinates T _AM. In this case, the first exposure apparatus 10 forms the first pattern P1 so that the marks AM1 to AM3 and the first pattern P1 have the target positional relationship based on the measurement result of the positions of the marks AM1 to AM3 ( FIG. 5B). Further, in the second exposure apparatus 20, the second pattern P2 is formed based on the measurement result of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the second pattern P2 have the target positional relationship (FIG. 5(c)). In this example, the first pattern P1 and the second pattern P2 are formed on the substrate by changing the magnification in the ±Y direction depending on the shift of the marks AM1 to AM3 from the target position coordinates T _AM. Becomes That is, in this example, the second index CS as the position of the entire pattern can be included in the allowable range, but the first index as the dimension of the entire pattern cannot be included in the allowable range.

Conventional example 3
FIG. 6 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 3. In Conventional Example 3, as shown in FIG. 6A, an example is shown in which three marks AM1 to AM3 are formed on the substrate while being shifted in one direction from the target position coordinates T _AM . In this case, the first exposure apparatus 10 does not use the measurement results of the positions of the marks AM1 to AM3, but performs the first exposure based on the information (design data) indicating the target position coordinates for forming the first pattern P1. The first pattern P1 is formed under the coordinate system of the apparatus 10 (FIG. 6B). On the other hand, in the second exposure apparatus 20, the second pattern P2 is formed based on the measurement result of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the second pattern P2 have the target positional relationship (FIG. 6(c)). In this example, the first pattern P1 is formed on the substrate without depending on the shift of the marks AM1 to AM3, but the second pattern P2 depends on the shift of the marks AM1 to AM3 and the target position coordinate T _P1. To be formed on the substrate. In other words, in this example, the positional relationship between the first pattern P1 and the second pattern P2 deviates from the target positional relationship, and the first index TP as the dimension of the entire pattern and the second index CS as the position of the entire pattern. Cannot be within the allowable range.

[Pattern formation processing of this embodiment]
In the present embodiment, in order to solve the above-described problems in the conventional pattern formation, each of the first pattern P1 and the second pattern P2 is based on information indicating target position coordinates (for example, design data), and each exposure apparatus. It is formed on the substrate under the coordinate system of. Specifically, the first exposure apparatus 10 sets the first pattern P1 on the substrate at the target position coordinates in the coordinate system of the first exposure apparatus 10 based on the information indicating the target position coordinates for forming the first pattern P1. To form. Similarly, the second exposure apparatus 20 forms the second pattern P2 on the substrate with the target position coordinates in the coordinate system of the second exposure apparatus 20, based on the information indicating the target position coordinates for forming the second pattern P2. To do.

By the way, in the plurality of exposure apparatuses (the first exposure apparatus 10 and the second exposure apparatus 20) used in the forming system 100, there may be individual differences in the characteristics peculiar to the apparatus. The characteristics are, for example, errors unique to the device, such as an error in the device coordinate system and a placement error of the substrate transferred onto the substrate stage. In this way, when there are individual differences in characteristics between the first exposure apparatus 10 and the second exposure apparatus 20, the first pattern P1 formed by the first exposure apparatus 10 and the second pattern formed by the second exposure apparatus 20. The positional relationship with the second pattern P2 deviates from the target positional relationship. As a result, the first index TP as the size of the entire pattern and the second index CS as the position of the entire pattern may be insufficient (particularly, the first index TP may be insufficient).

Therefore, in the forming system 100 of the present embodiment, the position of the mark AM measured by the mark measuring unit 13 under the coordinate system of the first exposure apparatus 10 and the mark AM under the coordinate system of the second exposure apparatus 20. The difference from the position of the mark AM measured by the measuring unit 23 is obtained. Then, based on the difference, the position of the second pattern P2 formed on the substrate under the coordinate system of the second exposure apparatus 20 is determined (corrected). Specifically, the deviation of the positional relationship between the first pattern P1 and the second pattern P2 due to the individual difference in the pattern forming characteristics between the first exposure apparatus 10 and the second exposure apparatus 20 is corrected. , The position of the second pattern P2 formed on the substrate can be determined. This makes it possible to form the first pattern and the second pattern on the substrate such that the first index TP and the second index CS fall within the allowable range.

The pattern forming process (MMG technique) on the substrate in the forming system 100 of the present embodiment will be described below with reference to FIGS. 7 to 8. FIG. 7 is a flowchart showing the pattern forming process on the substrate according to the present embodiment. Each step of the flowchart shown in FIG. 7 can be executed under the control of the main controller 40. Further, FIG. 8 is a schematic view showing a state in which the mark AM, the first pattern P1, and the second pattern P2 are formed on the substrate over time.

In S11, the substrate W is transported to the first exposure apparatus 10 by the transport unit 30.
In S12, the mark forming unit 12 of the first exposure apparatus 10 causes the mark forming unit 12 of the first exposure apparatus 10 to print on the substrate based on the coordinate system of the first exposure apparatus 10 based on the information (for example, design data) indicating the target position coordinates for forming the mark AM. A mark AM is formed on the mark (mark forming step). That is, the mark AM is formed at the target position coordinate in the coordinate system of the first exposure apparatus 10. Here, as described above, since the accuracy of forming the mark AM by the mark forming unit 12 is insufficient, the mark AM may not be formed at the target position coordinates but may be formed at a position shifted from the target position coordinates. In the present embodiment, three marks AM are formed on the substrate, and the three marks AM have a shift component in the X direction (an example of the misalignment component) and a magnification component in the Y direction (an example of the shape change component). ) And the formation error including.

In S13, the position of the mark AM formed on the substrate in the step of S12 is measured by the mark measuring unit 13 of the first exposure apparatus 10 under the coordinate system of the first exposure apparatus 10 (first measurement step). ). Thereby, the mark coordinate information C1 indicating the position coordinate of the mark AM in the coordinate system of the first exposure apparatus 10 can be obtained. Assuming that no measurement error has occurred in the mark measuring unit 13, the mark coordinate information C1 includes an error component CM1 uniquely generated in the first exposure apparatus 10 and a formation error component CMX of the mark AM by the mark forming unit 12. Have. The error component CM1 includes, for example, an error in the apparatus coordinate system in the first exposure apparatus 10, an error in placing the substrate W on the substrate stage, and the like. The X direction shift, the Y direction shift, the rotation (θ direction), and the X direction magnification. And a Y-direction magnification factor. Further, the formation error component CMX of the mark AM can be represented by a plurality of elements similarly to the error component CM1, but in the present embodiment, it is composed of an X direction shift and a Y direction magnification.

In S14, based on the first information (for example, design data) indicating the target position coordinates for forming the first pattern P1, the pattern forming unit of the first exposure apparatus 10 under the coordinate system of the first exposure apparatus 10. The first pattern P1 is formed on the substrate by 11 (first forming step). That is, the first pattern P1 is formed at the target position coordinates in the coordinate system of the first exposure apparatus 10 without using the mark coordinate information C1 (measurement result by the mark measuring unit 13) obtained in the process of S13. According to this step, as shown in FIG. 8A, the error component CM1 peculiar to the first exposure apparatus 10 with respect to the target position coordinate of the first information is generated, but the mark forming unit 12 forms the mark AM. The first pattern P1 can be formed on the substrate without depending on the error component CMX.

In S15, the substrate W is transported from the first exposure apparatus 10 to the second exposure apparatus 20 by the transport unit 30, and the mark coordinate information C1 obtained by the first exposure apparatus 10 in the step of S13 is transferred to the second exposure apparatus 20. Transfer (notify). In the present embodiment, the transfer of the mark coordinate information C1 is performed when the substrate W is transferred to the second exposure apparatus 20, but the present invention is not limited to this, and may be performed between S13 and S17.

In S16, under the coordinate system of the second exposure apparatus 20, the mark formed on the substrate by the mark measuring unit 23 of the second exposure apparatus 20 and by the mark forming unit 12 of the first exposure apparatus 10 in the step of S12. The position of AM is measured (2nd measurement process). Thereby, the mark coordinate information C2 indicating the position coordinate of the mark AM in the coordinate system of the second exposure device 20 can be obtained. Assuming that no measurement error has occurred in the mark measuring unit 23, the mark coordinate information C2 includes an error component CM2 uniquely generated in the second exposure apparatus 20 and a formation error component CMX of the mark AM by the mark forming unit 12. Have. The error component CM2 includes, for example, an error in the apparatus coordinate system in the second exposure apparatus 20, an error in placing the substrate W on the substrate stage, and the like. The X direction shift, the Y direction shift, the rotation (θ direction), and the X direction magnification. And a Y-direction magnification factor.

In S17, the correction value CV used when forming the second pattern P2 on the substrate under the coordinate system of the second exposure apparatus 20 is obtained. The correction value CV represents an individual difference in characteristics between the first exposure apparatus 10 and the second exposure apparatus 20, that is, a difference between an error uniquely generated in the first exposure apparatus 10 and an error uniquely generated in the second exposure apparatus 20. It is for correction (reduction) and can be obtained by the following equation (1). In the equation (1), the difference between the mark coordinate information C1 obtained by the first exposure apparatus 10 in the step S13 and the mark coordinate information C2 obtained by the second exposure apparatus 20 in the step S16 is the correction value CV. Can be sought as The mark coordinate information C1 and the mark coordinate information C2 commonly include the formation error component CMX of the mark AM. Therefore, as a result, the correction value CV is the difference between the error component CM1 uniquely generated in the first exposure apparatus 10 and the error component CM2 uniquely generated in the second exposure apparatus 20.
CV=C2-C1
=(CM2+CMX)-(CM1+CMX)
=CM2-CM1 (1)

In S18, based on the second information (for example, design data) indicating the target position coordinates for forming the second pattern P2, under the coordinate system of the second exposure apparatus 20, the pattern forming unit of the second exposure apparatus 20. The second pattern P2 is formed on the substrate by 21 (second forming step). At this time, the position of the second pattern P2 formed on the substrate under the coordinate system of the second exposure apparatus 20 is determined based on the correction value CV obtained in the process of S17. Specifically, the target position coordinates of the second information are corrected by the correction value CV, and the second pattern P2 is formed on the substrate based on the position coordinates obtained thereby. As shown in FIG. 8B, the error of the second pattern P2 thus formed on the substrate is only the error component CM1 obtained by subtracting the correction value CV from the unique error component CM2 in the second exposure apparatus 20. Become. That is, it is possible to correct (reduce) the individual difference in characteristics between the first exposure apparatus 10 and the second exposure apparatus 20 by setting the same error component CM1 in the first pattern P1 and the second pattern P2. As a result, the first index TP as the size of the entire pattern and the second index CS as the position of the entire pattern can be within the respective allowable ranges. Further, in S<b>19, the substrate W is unloaded from the second exposure device 20 by the transport unit 30.

As described above, the forming system 100 of the present embodiment uses the difference between the mark coordinate information C1 obtained by the first exposure apparatus 10 and the mark coordinate information C2 obtained by the second exposure apparatus 20 to determine the second The position of the second pattern P2 formed on the substrate by the exposure device 20 is determined. This makes it possible to correct (reduce) individual differences in characteristics between the first exposure apparatus 10 and the second exposure apparatus 20, and improve the pattern formation accuracy by the MMG technique.

<Embodiment of Manufacturing Method of Article>
The method for producing an article according to the embodiment of the present invention is suitable for producing an article such as a microdevice such as a semiconductor device or an element having a fine structure, for example. The method of manufacturing an article according to the present embodiment includes a step of forming a latent image pattern on a photosensitive agent applied to a substrate using the above-mentioned exposure device (step of exposing the substrate), and the latent image pattern is formed in this step. And developing (processing) the substrate. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

<Other Examples>
The present invention supplies a program that implements one or more functions of the above-described embodiments to a system or apparatus via a network or a storage medium, and one or more processors in a computer of the system or apparatus read and execute the program. It can also be realized by the processing. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist thereof.

10: 1st exposure apparatus, 11: Pattern formation part, 12: Mark formation part, 13: Mark measurement part, 20: 2nd exposure device, 21: Pattern formation part, 23: Mark measurement part, 30: Conveyance part, 40 : Main control unit, 100: forming system

Claims (12)

A method of forming a pattern on one layer on a substrate using a first device and a second device, comprising:
A first measurement step of measuring the position of a mark formed on the substrate under the coordinate system of the first device;
A first forming step of forming the first pattern on the substrate under the coordinate system of the first device based on first information indicating target position coordinates for forming the first pattern;
A second measurement step of measuring the position of the mark under the coordinate system of the second device;
A second forming step of forming the second pattern on the substrate under the coordinate system of the second device based on second information indicating target position coordinates for forming the second pattern;
Including,
In the second forming step, the coordinate system of the second device is also calculated based on the difference between the position of the mark measured in the first measuring step and the position of the mark measured in the second measuring step. And the position of the second pattern formed on the substrate is determined by. In the second forming step, based on the difference, the deviation of the positional relationship between the first pattern and the second pattern due to the difference in characteristics between the first device and the second device is corrected. The method according to claim 1, further comprising: correcting the position of the second pattern formed on the substrate under the coordinate system of the second device. In the second forming step, based on the position coordinates obtained by correcting the target position coordinates of the second information by the difference, the second pattern is formed on the substrate under the coordinate system of the second device. The method according to claim 1 or 2, characterized in that The said 1st pattern is formed on the said board|substrate in the said 1st formation process, without using the measurement result in the said 1st measurement process, The any one of Claim 1 thru|or 3 characterized by the above-mentioned. Forming method. 5. The first forming step, wherein the first pattern is formed on the substrate at the target position coordinates of the first information in the coordinate system of the first device. The forming method according to item. The forming method according to claim 1, further comprising a step of forming the mark on the substrate by the first device before the first measuring step. 7. The formation method according to claim 1, wherein the first pattern and the second pattern are formed in different regions in the same layer on the substrate. The forming method according to claim 1, further comprising a step of transferring a measurement result of the first measuring step from the first device to the second device. A forming step of forming a pattern on a substrate by using the forming method according to claim 1.
A processing step of processing the substrate on which a pattern is formed in the forming step,
An article manufacturing method comprising: manufacturing an article from the substrate processed in the processing step. A program for causing a computer to execute each step of the forming method according to claim 1. A system for patterning a single layer on a substrate, comprising:
A first measuring unit that measures the position of the mark formed on the substrate; and a first measuring unit that forms the first pattern on the substrate based on second information indicating target position coordinates for forming the first pattern. A first device having a first forming part;
It has a 2nd measurement part which measures the position of the mark, and a 2nd formation part which forms the 2nd pattern on the above-mentioned substrate based on the 2nd information which shows the target position coordinates which should form the 2nd pattern. A second device,
Including,
The measurement of the position of the mark by the first measuring unit and the formation of the first pattern by the first forming unit are performed under the coordinate system of the first device,
The measurement of the position of the mark by the second measuring unit and the formation of the second pattern by the second forming unit are performed under the coordinate system of the second device,
The second forming unit also determines the coordinate system of the second device based on the difference between the position of the mark measured by the first measuring unit and the position of the mark measured by the second measuring unit. And determining the position of the second pattern formed on the substrate. A lithographic apparatus for forming a second pattern on a layer on a substrate on which a first pattern is formed by a first apparatus,
A measuring unit that measures the position of a mark formed on the substrate under the coordinate system of the lithographic apparatus;
A forming unit for forming the second pattern on the substrate under the coordinate system of the lithographic apparatus based on information indicating target position coordinates for forming the second pattern;
Including,
The forming unit is configured to perform the lithographic apparatus based on a difference between a position of the mark measured by the first device and a position of the mark measured by the measuring unit under a coordinate system of the first device. A lithographic apparatus, wherein the position of the second pattern formed on the substrate is corrected under the coordinate system of.

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