JP2019149501A - Wiring board and electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board and an electronic device capable of more effectively discharging heat. A wiring board has a Peltier element inside a core insulating layer. In the Peltier device 120, the first electrode 123n of the two electrodes of the N-type semiconductor device 121n and the second electrode 123p of the two electrodes of the P-type semiconductor device 121p are alternately adjacent to each other at the first end, and N The third electrode 122n of the p-type semiconductor element 121n and the fourth electrode 122p of the p-type semiconductor element 121p are alternately adjacent to each other at the second end. The conductor patterns 111 and 116 connect the first and second electrodes 123n and 123p that are adjacent to each other at the first end, and connect the third and fourth electrodes 122n and 122p that are adjacent to each other at the second end. The surfaces including the respective portions joined to the two electrodes to be formed are flat. The electronic component 140 is located on the first end side of the Peltier device 120. [Selection diagram] Figure 2

Description

  The present disclosure relates to a wiring board and an electronic device.

  There is a wiring board for mounting electronic components and connecting the electronic components to a module substrate or the like. In a wiring board, a plurality of insulating layers are laminated, wiring is provided on the surface of each insulating layer, and wirings sandwiching each insulating layer are connected by through conductors (via hole conductors).

  Electronic components include those that generate heat and are greatly affected by the heat generation, such as IC chips. A technique is known in which a Peltier element is mounted on such a wiring board to appropriately transfer heat (Patent Document 1).

Japanese Patent No. 5125119

  However, if the Peltier element is connected in the same manner as other wiring, there is a problem that the Peltier element cannot be operated sufficiently due to insufficient heat absorption / exhaust heat capacity.

  An object of the present disclosure is to provide a wiring board and an electronic device that can perform an absorption / exhaust heat operation more effectively.

  In order to achieve the above object, one aspect according to the present disclosure includes a core insulating layer, a Peltier element that includes an N-type semiconductor element and a P-type semiconductor element, and is positioned inside the core insulating layer, and an N-type semiconductor element. The Peltier element is a first electrode of the two electrodes of the N-type semiconductor element and the second electrode of the P-type semiconductor element. One of the two electrodes is alternately arranged adjacent to each other at the first end, and the other third electrode of the two electrodes of the N-type semiconductor element and the two electrodes of the P-type semiconductor element The other fourth electrodes are alternately arranged adjacent to each other at the second end, and the conductor pattern connects the first and second electrodes adjacent to each other at the first end, Connecting the third electrode and the fourth electrode that are adjacent to each other at the portion, and the first electrode and the second electrode of the conductor pattern The surface including each portion bonded to the electrode and the surface including each portion bonded to the third electrode and the fourth electrode are flat, and the electronic component is disposed on the first end portion side of the Peltier element. It is a wiring board characterized by being located.

  Another aspect according to the present disclosure is an electronic apparatus including the above-described wiring board and a module board to which the wiring board is electrically connected.

  According to the contents of the present disclosure, there is an effect that the heat exhausting operation can be performed more effectively from within the wiring board.

It is a top view of the wiring board of a 1st embodiment. It is sectional drawing of the electronic device in the cross section along the connection direction of the semiconductor element of a wiring board. It is sectional drawing which showed the modification of the wiring board of 1st Embodiment. It is sectional drawing which showed the wiring board of 2nd Embodiment. It is sectional drawing which showed the modification of the wiring board of 2nd Embodiment. It is sectional drawing which showed the wiring board of 3rd Embodiment. It is sectional drawing which showed the modification of the wiring board of 3rd Embodiment.

Hereinafter, embodiments according to the present disclosure will be described with reference to the drawings.
[First Embodiment]
FIG. 1 is a plan view of the wiring board 100 according to the first embodiment.

  One side (upper side) of the wiring substrate 100 is the upper surface (second surface) side of the core substrate 110 (core insulating layer) that is an insulating substrate. ) Conductor patterns 111 are spaced apart from each other. The pattern shape of the conductor pattern 111 is a flat plate-like rectangular shape (rectangular body) in a flat shape on at least the lower side (the inner surface of the core substrate 110 and a surface including a contact portion to be described later). The plurality of conductor patterns 111 are widely located on the upper surface except for a portion having a certain separation distance.

  The solder resist layer 118 is located in the gap portion of the conductor pattern 111. A Peltier element 120 (thermoelectric conversion element) is fixed to the central portion of the core substrate 110 in plan view by an insulating adhesive member 117 (resin or the like) as indicated by a dotted line. Here, the Peltier element 120 has a total of 64 semiconductor elements 121 arranged in 8 rows and 8 columns.

  The 33 conductor patterns 111 and the 64 semiconductor elements 121 are electrically connected in series. Among the conductor patterns 111, the conductor patterns 1112 and 1113 are both ends, and the remaining conductor patterns 1111 are each formed of a pair of N-type semiconductor elements 121n and P-type semiconductor elements 121p (see FIG. 2). 1113 are connected. Here, for example, a voltage (positive voltage) higher than a supply voltage (for example, ground voltage) to the conductor pattern 1113 is applied to the conductor pattern 1112.

  FIG. 2 is a cross-sectional view of the wiring board 100 in FIG. 1 along the connection direction of the semiconductor element 121. Here, the module substrate 200 of the electronic device 1 having the wiring substrate 100 is shown together with the wiring substrate 100. The wiring substrate 100 includes a core substrate 110, a Peltier element 120, a buildup unit 130, an electronic component 140, and the like.

  The core substrate 110 has a through hole penetrating up and down in the vicinity of the center. The Peltier element 120 having substantially the same height as the core substrate 110 is located in the through hole, that is, inside the core substrate 110. The core substrate 110 has through holes 1121 and 1122 outside the Peltier element 120. A conductor 1131 (through-hole conductor) in the through hole 1121 connects the upper surface side pad 1141 connected to the conductor pattern 1112 in the conductor pattern 111 and the lower surface side pad 1151. The conductor 1132 (through-hole conductor) in the through hole 1122 connects the upper surface side pad 1142 connected to the conductor pattern 1113 of the conductor pattern 111 and the lower surface side pad 1152.

  The Peltier element 120 is positioned in the direction in which the two electrodes (that is, the heat absorption surface and the heat exhaust surface) that are paired are positioned at both ends in the penetration direction (vertical direction). In the cross section of FIG. 2, electrodes 122n and 122p (collectively referred to as electrodes 122) are positioned at the upper end (second end), respectively, and electrodes 123n and 123p (collectively electrodes 123 at the lower end (first end)). A plurality of N-type semiconductor elements 121n and P-type semiconductor elements 121p, each of which is also positioned, extend vertically. The N-type semiconductor elements 121n and the P-type semiconductor elements 121p are alternately arranged next to each other. Here, the N-type semiconductor elements 121n and the P-type semiconductor elements 121p adjacent to each other from the conductor pattern 1112 side are electrically connected in series alternately.

  The electrodes 122 on the upper side (second end) of the semiconductor element 121 (that is, the electrode 122n (third electrode) of the N-type semiconductor element 121n) and the electrical connection direction (wiring) in series with this Electrical connection with the electrode 122p (fourth electrode) of the P-type semiconductor element 121p is made directly by the conductor pattern 111, that is, by laminating a plating layer without passing through a through conductor (via hole conductor).

  In addition, on the lower side (first end) of each semiconductor element 121, the electrodes 123 (that is, the electrode 123n (first electrode) of the N-type semiconductor element 121n and the electrode 123p (second electrode) of the P-type semiconductor element 121p). )) Is directly electrically connected by the conductor pattern 116.

  Here, the leftmost conductor pattern 111 in the figure is the conductor pattern 1112, and the rightmost conductor pattern 111 is the conductor pattern 1113. That is, a current from the P-type semiconductor element 121p to the N-type semiconductor element 121n flows in the upper electrode 122, and a current from the N-type semiconductor element 121n to the P-type semiconductor element 121p flows in the lower electrode 123. . As a result, heat absorption occurs in all the electrodes 123, and exhaust heat (radiation) occurs in all the electrodes 122.

  The conductor pattern 111 (116) may be connected to the entirety of the electrode 122n (123n) of the N-type semiconductor element 121n and the electrode 122p (123p) of the P-type semiconductor element 121p in plan view. This maximizes the area where heat is transmitted between these electrodes and the conductor pattern.

  The surface area of the conductor patterns 111 and 116 is the sum of the surface areas of the two electrodes to which the conductor patterns 111 and 116 are connected, that is, the surface area of the electrode 122n of the N-type semiconductor element 121n and the electrode 122p of the P-type semiconductor element 121p. It may be larger than the sum of the surface areas and the sum of the surface area of the electrode 123n and the surface area of the electrode 123p. If the thickness of the electrode and the conductor pattern 111 is substantially the same, the function as the heat sink of the conductor patterns 111 and 116 improves as the area increases.

  For each semiconductor element 121, various known materials that can appropriately obtain the Peltier effect are used. The same material as that of the conductor pattern 111 may be used for the conductor pattern 116. The pattern shape of the conductor pattern 116 is a flat plate-like rectangular shape (rectangular body) in a flat plate shape on which at least the upper side (the inner side of the core substrate 110 and a surface including a contact portion to be described later) is flat. The size and aspect ratio of the rectangle are appropriately determined depending on the positional relationship, size, and shape of the electrodes.

  The thickness of the conductor patterns 111 and 116 is set to 20 to 50 μm, for example. Further, the height difference (unevenness or gradient in the vertical direction) of the upper surface and the height difference of the lower surface in each of the conductor patterns 111 and 116 are set to 10 μm or less, respectively. In other words, the surface including each portion joined to the electrode 122n and the electrode 122p of the conductor pattern 111 is a flat surface having a height difference of 10 μm or less. Moreover, the surface including each part joined to the electrode 123n and the electrode 123p of the conductor pattern 116 is a flat surface having a height difference of 10 μm or less.

  As described above, the side surface of the Peltier element 120 is fixed to the inner surface of the through hole of the core substrate 110 by the adhesive member 117.

  The conductor pattern 111 electrically connects the electrode 122n of the adjacent N-type semiconductor element 121n and the electrode 122p of the P-type semiconductor element 121p. Heat from the connected P-type semiconductor element 121p and N-type semiconductor element 121n is transmitted to the conductor pattern 111 by thermal conduction. As shown in FIG. 1, since the conductor pattern 111 is exposed to the outside (upward), the transmitted heat is released into the atmosphere. Note that the number of through holes 1121 and 1122 connected to the conductor patterns 1112 and 1113 is not limited to one, but the amount of heat transmitted to the lower surface side of the core substrate 110 via the conductors 1131 and 1132 is appropriately limited. Within the range.

  On the lower surface (first surface) side of the core substrate 110, the electrode 123n of the N-type semiconductor element 121n and the electrode 123p of the P-type semiconductor element 121p, which are adjacent to each other, are electrically connected. The heat of the conductor pattern 116 (that is, the heat of the electronic component 140) is efficiently attracted by the Peltier element 120, and the heat (charge corresponding to the amount of heat absorbed) moves to the electrode 122 side.

  The build-up unit 130 serving as an insulating layer is located on the lower surface side of the core substrate 110 (the first surface side of the Peltier element 120). The electronic component 140 is positioned inside the build-up unit 130 in accordance with the position of the Peltier element 120 on the core substrate 110. The electronic component 140 is bonded to the lower surface (first end) side of the Peltier element 120 by an adhesive member 141 (here, insulating). The electronic component 140 generates heat by operation and includes, for example, an IC chip.

  The build-up unit 130 is not particularly limited, but here, three insulating layers are laminated. Between each insulating layer is a wiring layer, which connects via-hole conductors that penetrate each insulating layer. On the lower surface side of the buildup unit 130, external connection pads 1341 to 1343 connected to an external board module or the like are located on predetermined grid points.

  The uppermost insulating layer (insulating layer facing the core substrate 110) is a plurality of terminals that lead each terminal on the lower surface side of the electronic component 140 to the wiring layer on the upper surface of the insulating layer of the lower layer (intermediate layer). The conductor 131 (via hole conductor) is penetrated. These conductors 131 are further connected to the external connection pads 1343 on the lower surface of the build-up part 130 through through conductors and wirings penetrating the intermediate layer and the lowermost layer (lowermost layer) insulating layer. The uppermost insulating layer is penetrated by through conductors 1321 and 1322 (via hole conductors) connected to the lower surface pads 1151 and 1152, respectively. The through conductor 1321 is further connected to the external connection pad 1341 on the lower surface of the buildup unit 130 through a through conductor and a wiring penetrating the intermediate insulating layer and the lowermost insulating layer. Similarly, the through conductor 1322 is connected to the external connection pad 1342 on the lower surface of the buildup unit 130.

  The external connection pads 1341 to 1343 (that is, the wiring substrate 100) are electrically connected to the module substrate 200 via a conductive adhesive member 210 (solder or the like). Electric power is supplied from the module substrate 200 to the electronic component 140, and various signals are output from the electronic component 140 to the module substrate 200, and the signals are used for the operation of the electronic device 1. As described above, a positive voltage is supplied to the external connection pad 1341 connected to the conductor pattern 1112, and a ground voltage is supplied to the external connection pad 1342 connected to the conductor pattern 1113, so that the Peltier device 120 operates. To do.

  FIG. 3 is a view showing a modification of the wiring board 100 of the first embodiment in the same cross section as the cross sectional view shown in FIG. In the cross-sectional view of this modification, an upper buildup portion 150 is stacked on the upper surface side of the core substrate 110. Here, the upper buildup unit 150 has three insulating layers laminated.

  On each insulating layer, a conductor surface is located, and between the conductor surface of the lowermost insulating layer and the conductor pattern 111, and between each conductor surface, the through holes that are two-dimensionally arranged through the insulating layer, respectively. They are electrically and thermally connected by a conductor. The heat transmitted to the conductor pattern 111 is released from the uppermost conductor surface 151 in the upper buildup section 150 via these through conductors and conductor surfaces. Note that the shape and size of each conductor surface may be different for each insulating layer.

  As described above, the wiring board 100 according to the first embodiment includes the core insulating layer 110, the N-type semiconductor element 121n and the P-type semiconductor element 121p, and the Peltier element 120 positioned inside the core insulating layer 110. Conductor patterns 111 and 116 connecting the electrodes 122n and 123n of the N-type semiconductor element 121n and the electrodes 122p and 123p of the P-type semiconductor element 121p, and an electronic component 140 are provided.

  In the Peltier element 120, one electrode 123n of the two electrodes 122n and 123n of the N-type semiconductor element 121n and one electrode 123p of the two electrodes 122p and 123p of the P-type semiconductor element 121p are at the first end. The other electrode 122n of the N-type semiconductor element 121n and the other electrode 122p of the P-type semiconductor element 121p are alternately arranged adjacent to each other at the second end. The conductive pattern 116 connects the adjacent electrodes 123n and 123p at the first end, and the conductive pattern 111 connects the adjacent electrodes 122n and 122p at the second end. The surface including each part bonded to the electrode 123n and the electrode 123p of the conductor pattern 116 and the surface including each part bonded to the electrode 122n and the electrode 122p of the conductor pattern 111 are flat surfaces each having a height difference of 10 μm or less. It is.

  The electronic component 140 is located on the first end portion side of the Peltier element 120. As a result, heat is directly transferred from the electrode 122 to the conductor pattern 111 without passing through the via-hole conductor, which has conventionally been the upper limit of exhaust heat, and is radiated from the conductor pattern 111, and heat is transferred from the conductor pattern 116 to the electrode 123. Since the heat can be transmitted and absorbed, the Peltier element 120 can be more efficiently operated to absorb and exhaust heat. As a result, the cooling function of the Peltier element 120 can be sufficiently exerted, and the electronic component 140 can be stably and appropriately operated.

  The conductor pattern 111 has a surface area larger than the sum of the surface areas of the two electrodes to which the conductor pattern 111 is connected, that is, the surface area of the electrode of the N-type semiconductor element 121n and the surface area of the electrode of the P-type semiconductor element 121p. Thus, by increasing the surface area and increasing the heat transfer range and the heat capacity, the Peltier element 120 can perform heat absorption / exhaust operation more efficiently, and the Peltier element 120 can function sufficiently more stably.

  In the wiring board 100 shown in FIG. 2 in the present embodiment, the conductor pattern 111 is exposed to the outside. In this way, the wiring board 100 can dissipate heat directly from the conductor pattern 111 without having the build-up portion 130 on the upper surface side of the core substrate 110, so that sufficient heat can be exhausted from the Peltier element 120. The cooling function of the Peltier element 120 can be sufficiently exhibited.

  In addition, the core substrate 110 includes a lower surface (first surface) corresponding to the first end portion related to the electrodes 123n and 123p of the Peltier element 120 and an upper surface corresponding to the second end portion related to the electrodes 122n and 122p ( Second surface). The wiring substrate 100 has an insulating layer of the buildup unit 130 located on the lower surface side of the core substrate 110. The electronic component 140 is located inside this insulating layer. As described above, the electronic component 140 is held inside the build-up unit 130, so that a via-hole conductor is appropriately formed in the core substrate 110 and the build-up unit 130 by being aligned with each terminal of the electronic component 140. Wiring can be performed.

  In addition, the electronic device 1 includes the above-described wiring board 100 and a module board 200 to which the wiring board 100 is electrically connected. As described above, by using the above-described wiring board 100 in the electronic device 1, the electronic component 140 and the like can function sufficiently stably by the heat absorption / exhaust heat operation of the wiring substrate 100, and the electronic device 1 can be operated more effectively. Can do.

[Second Embodiment]
Next, the wiring board 100a of 2nd Embodiment is demonstrated. FIG. 4 is a view showing the wiring substrate 100a of the second embodiment in the same cross section as the cross sectional view shown in FIG.

  In this wiring board 100a, the thickness of the Peltier element 120a is larger than the thickness of the core board 110a, that is, the length between the electrode 122 and the electrode 123 (between both-end electrodes) in each of the N-type semiconductor element 121n and the P-type semiconductor element 121p. It is smaller (shorter). As a result, a concave region 125 where the Peltier element 120a does not occupy a position is generated in the through hole of the core substrate 110a. The Peltier element 120a is positioned in the through hole so that the endothermic surface side faces the concave region 125 (that is, close to the through hole in FIG. 4). The side surface of the Peltier element 120a is fixed to the inner wall of the through hole of the core substrate 110a by an insulating adhesive member 117a.

  Inside the concave region 125 of the core substrate 110 a, at least a part (a part) of the electronic component 140, in this case, substantially the entire electronic component 140 is accommodated. The electronic component 140 is attached to the Peltier element 120 a by the adhesive member 141. It is bonded to the conductor pattern 116 on the heat absorbing surface side. This eliminates the need to make the lengths of the through conductors 1321a and 1322a penetrating the uppermost insulating layer of the buildup portion 130a longer than the conductor 131 by the length corresponding to the thickness of the electronic component 140. The remaining portion of the concave region 125 that is not occupied by the electronic component 140 is filled with an insulating member. This insulating member may be made of the same material as the insulating layers of the core substrate 110a and the buildup portion 130a.

  FIG. 5 is a view showing a modification of the wiring board 100a of the second embodiment in the same cross section as the cross sectional view shown in FIG. In this modification, as in the modification of the first embodiment shown in FIG. 3, the wiring board 100a has an upper build-up on the upper surface side of the core board 110a, that is, on the side where the conductor pattern 111 is located and radiates heat. Part 150. As described above, the exhaust heat from the Peltier element 120a of the wiring board 100a according to the second embodiment is caused to be performed from the conductor surface 151 on the upper surface of the upper buildup section 150 through the conductor pattern 111 through a large number of through conductors and wirings. Also good.

  As described above, in the wiring substrate 100a according to the second embodiment, between the both end electrodes (between the electrode 122n and the electrode 123n and between the electrode 122p and the electrode 122p) of each of the N-type semiconductor element 121n and the P-type semiconductor element 121p of the Peltier element 120a, The length between the electrode 123p and the electrode 123p is shorter than the thickness between the upper surface (second surface) and the lower surface (first surface) of the core substrate 110a, and at least a part of the electronic component 140 is the core substrate 110a. Located inside. Thus, the electronic component 140 can be accommodated in the core substrate 110a by determining the size so that the lengths of the N-type semiconductor element 121n and the P-type semiconductor element 121p are slightly shorter than the core substrate 110a. Accordingly, it is not necessary to lengthen the through conductors 1321a and 1322a penetrating the uppermost insulating layer of the buildup portion 130a, and the processing is facilitated, and the processing accuracy can be stably maintained.

[Third Embodiment]
Next, the wiring board 100b of 3rd Embodiment is demonstrated. FIG. 6 is a view showing the wiring board 100b of the third embodiment in the same cross section as the cross sectional view shown in FIG.

  Similar to the wiring substrate 100a of the second embodiment, the wiring substrate 100b has a thickness (electrode) of the Peltier element 120b rather than the thickness of the core substrate 110b (thickness between the first surface and the second surface). The length between 122n and the electrode 123n and the length between the electrode 122p and the electrode 123p) are smaller. The Peltier device 120b has a frame body 126 that surrounds the outer periphery of the arrangement range (plan view) of the N-type semiconductor device 121n and the P-type semiconductor device 121p.

  The frame body 126 is an insulating structure and can be made of the same material as the insulating layer of the core substrate 110b. The thickness of the frame 126 in the height direction (the length direction between both end electrodes) is substantially the same as that of the core substrate 110b, that is, from the length between the both end electrodes of the N-type semiconductor element 121n and the P-type semiconductor element 121p. Is also big.

  The inner side surface of the through hole of the core substrate 110 b and the outer side surface of the frame body 126 are bonded and fixed by an adhesive member 117. That is, a concave region 125b in which the N-type semiconductor element 121n and the P-type semiconductor element 121p do not occupy positions is generated in the frame 126. The Peltier element 120b is positioned in the through hole so that the endothermic surface side (one end side) faces the concave region 125b (that is, close to the through hole in FIG. 6). Thereby, the frame body 126 protrudes toward the one end with respect to the N-type semiconductor element 121n and the P-type semiconductor element 121p. The electronic component 140 is located inside the concave region 125b and is adhered to the heat absorbing surface of the Peltier element 120b by the adhesive member 141. A portion of the concave region 125b where the electronic component 140 and its terminal 142 and the conductor 131 connected to the terminal 142 do not occupy a position is embedded with the same insulator as the insulating layer of the build-up portion 130a.

  The frame 126 can be used for positioning the electronic component 140 when the electronic component 140 is attached. In the wiring board 100b of the third embodiment, since the electronic component 140 is directly attached to the Peltier element 120b of the core substrate 110b, the position of the electronic component 140 can be determined more accurately by using the frame body 126 as a reference. it can. Thereby, heat absorption is performed more effectively.

  FIG. 7 is a view showing a modification of the wiring board 100b of the third embodiment in the same cross section as the cross sectional view shown in FIG. In this modification, as in the modification of the second embodiment shown in FIG. 5, the wiring board 100b is laminated on the upper surface side of the core board 110b, that is, on the side where the conductor pattern 111 is located and radiates heat. The upper buildup unit 150 is provided. As described above, the exhaust heat from the Peltier element 120b of the wiring board 100b of the third embodiment is performed from the conductor surface 151 on the upper surface of the upper buildup portion 150 through the conductor pattern 111 via a large number of through conductors and wirings. Also good.

  As described above, in the wiring substrate 100b according to the third embodiment, the Peltier element 120b has the P-type semiconductor element 121p and the N-type semiconductor element 121n on the side of the electrodes 123p and 123n, respectively in the bottom view or the plan view. The frame 126 surrounds the outer periphery of the arrangement range of the type semiconductor element 121p and the N type semiconductor element 121n. That is, since the electronic component 140 can be positioned and fixed with the frame body 126 as a reference when the electronic component 140 is arranged, the heat exhausted from the electronic component 140 that has been aligned more accurately with respect to the Peltier element 120b, the electron The component 140 is cooled more efficiently.

  Further, the frame body 126 protrudes to the side where the electronic component 140 is located (the electrode 123 side) with respect to the N-type semiconductor element 121n and the P-type semiconductor element 121p. Thereby, at least a part of the electronic component 140 can be accommodated in the frame 126. Therefore, the electronic component 140 can be more easily and accurately arranged with respect to the Peltier element 120b, and the cooling ability of the electronic component 140 by the Peltier element 120b can be sufficiently exhibited.

  Various modifications can be made to the above-described embodiment according to the present disclosure. For example, in the above embodiment, the concave regions 125 and 125b are provided only on the heat absorption surface side, but the surface position of the conductor pattern 111 on the heat exhaust surface side is in a position recessed from the surfaces of the core substrates 110a and 110b. The case is not excluded.

  In the above embodiment, the frame body 126 is longer than the length between both end electrodes of the N-type semiconductor element 121n and the P-type semiconductor element 121p, but may be the same length. Also, a shape that surrounds only a part of the concave region 125b or only the concave region 125b between the two end electrodes, rather than surrounding the entire region between the two end electrodes of the N-type semiconductor element 121n and the P-type semiconductor element 121p, It may be a positional relationship.

  Moreover, the pattern shape of the conductor patterns 111 and 116 is not limited to a rectangle. For example, the four corners may be rounded, the middle of both end electrodes may be thin, or may have a protruding portion, or may be bent in the middle.

  Further, the number, arrangement, and connection order of the N-type semiconductor elements 121n and the P-type semiconductor elements 121p in the Peltier elements 120, 120a, and 120b are not limited to those shown in the above embodiment, and may be different. . Moreover, it is not restricted to what all the semiconductor elements are connected in series, The part connected in parallel may be contained.

  In addition, specific details such as configurations and structures shown in the above embodiments can be appropriately changed without departing from the spirit of the present disclosure.

DESCRIPTION OF SYMBOLS 1 Electronic device 100, 100a, 100b Wiring board 110, 110a, 110b Core board 111 Conductor pattern 1111-1113 Conductor pattern 1121, 1122 Through-hole 1131, 1132 Conductor 1141, 1142 Upper surface side pad 1151, 1152 Lower surface side pad 116 Conductor pattern 117 117a Adhesive member 118 Solder resist layer 120, 120a, 120b Peltier element 121 Semiconductor element 121n N-type semiconductor element 121p P-type semiconductor element 122, 122n, 122p Electrodes 123, 123n, 123p Electrodes 125, 125b Concave region 126 Frame body 130, 130a Build-up part 131 Conductors 1321, 1321a, 1322 Through conductors 1341-1343 External connection pad 140 Electronic component 141 Adhesive member 142 Terminal 15 Upper buildup portion 151 conductive surfaces 200 module substrate 210 adhesive member

Claims (8)

A core insulation layer;
A Peltier element having an N-type semiconductor element and a P-type semiconductor element and positioned inside the core insulating layer;
A conductor pattern connecting the electrode of the N-type semiconductor element and the electrode of the P-type semiconductor element;
Electronic components,
With
In the Peltier element, one first electrode of two electrodes of the N-type semiconductor element and one second electrode of two electrodes of the P-type semiconductor element are alternately adjacent at a first end. The other third electrode of the two electrodes of the N-type semiconductor element and the fourth electrode of the other of the two electrodes of the P-type semiconductor element are alternately adjacent at the second end. Arranged,
The conductor pattern connects the first electrode and the second electrode adjacent to each other at the first end, and connects the third electrode and the fourth electrode adjacent to each other at the second end. ,
The surface including each portion bonded to the first electrode and the second electrode of the conductor pattern, and the surface including each portion bonded to the third electrode and the fourth electrode are flat, respectively.
The electronic component is located on the first end portion side of the Peltier element. The wiring board according to claim 1, wherein the conductor pattern has a surface area larger than a sum of surface areas of two electrodes to which the conductor pattern is connected.   3. The wiring board according to claim 1, wherein the conductor pattern that connects the third electrode and the fourth electrode at the second end of the Peltier element is exposed to the outside. The core insulating layer has a first surface corresponding to the first end portion of the Peltier element, and a second surface corresponding to the second end portion,
The wiring board includes an insulating layer located on the first surface side of the core insulating layer,
The wiring board according to claim 1, wherein the electronic component is located inside the insulating layer. The core insulating layer has a first surface corresponding to the first end portion of the Peltier element, and a second surface corresponding to the second end portion,
The length between the first electrode and the third electrode and the length between the second electrode and the fourth electrode are the first surface and the second surface of the core insulating layer. Shorter than the thickness between
The wiring substrate according to claim 1, wherein at least a part of the electronic component is located inside the core insulating layer.   The Peltier element has the N-type semiconductor element and the P-type semiconductor element in a plan view when viewed from the first surface side with respect to the N-type semiconductor element and the P-type semiconductor element. 6. The wiring board according to claim 5, further comprising a frame body that surrounds an outer periphery of the arrangement range of the P-type semiconductor elements.   The wiring board according to claim 6, wherein the frame protrudes toward the first end with respect to the N-type semiconductor element and the P-type semiconductor element. The wiring board according to any one of claims 1 to 7,
A module board to which the wiring board is electrically connected;
An electronic device comprising:

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