JP2019114599A - Resin film for temporary fixing, resin film sheet for temporary fixing, and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a resin film for temporary fixing and a resin film sheet for temporary fixing which can adequately process a semiconductor wafer provided with a connection terminal or an electronic component having evenness such as an element, can be easily separated from the electronic component and a support after processing, and a method for manufacturing a semiconductor device using the resin film for temporary fixing.SOLUTION: A method for manufacturing a semiconductor device includes: a first step of preparing a resin film for temporary fixing including a first layer 41 containing a thermoplastic resin and a second layer 42 which is provided on the first layer and contains a thermoplastic resin and a curable component; and a second step of sticking surfaces provided with a semiconductor wafer or a connection terminal of an element from a first layer side. A thickness of the first layer in the resin film for temporary fixing prepared in the first step is smaller than a height T of the connection terminal, and the first layer is interposed between the second layer and the connection terminal in the resin film for temporary fixing stuck to the semiconductor wafer or the element in the second step.SELECTED DRAWING: Figure 8

Description

  The present invention relates to a temporary fixing resin film, a temporary fixing resin film sheet, and a method of manufacturing a semiconductor device.

  BACKGROUND OF THE INVENTION With the multifunctionalization of electronic devices such as smartphones and tablet PCs, stacked MCPs (Multi Chip Packages) in which semiconductor elements are stacked in multiple stages to increase the capacity are in widespread use. In the mounting of semiconductor devices, a film adhesive that is advantageous in the mounting process is widely used as an adhesive for die bonding. However, despite the tendency toward multiple functions as described above, the current semiconductor device connection method using wire bonds tends to slow down the operation of electronic devices due to limitations in data processing speed. It is in. In addition, since the demand for low power consumption and long-time use without charging is increasing, power saving is also required. From such a point of view, in recent years, an electronic device having a new structure in which semiconductor elements are connected to each other by through electrodes instead of wire bonds has been developed for the purpose of further speeding up and power saving.

  As described above, although electronic devices having a new structure have been developed, there is still a demand for higher capacity, and regardless of the package structure, development of technology capable of stacking semiconductor elements in multiple stages is in progress. However, in order to stack more semiconductor elements in a limited space, stable thinning of the semiconductor elements is essential.

  In the grinding process for thinning a semiconductor wafer, it has become mainstream that a support tape called a so-called BG tape is attached to the semiconductor wafer and ground in a supported state. However, the thinned semiconductor wafer is easily warped by the influence of the circuit applied to the surface. Therefore, BG tapes, which are easily deformable tape materials, are becoming unable to sufficiently support thinned semiconductor wafers.

  From such a background, a thinning process of a semiconductor wafer having a silicon wafer or glass which is a material harder than BG tape as a support has been proposed, and a material for adhering the semiconductor wafer and the silicon wafer or the support of glass (Adhesives) have been proposed. Such an adhesive is required as an important characteristic to be able to be separated from the support without damaging the semiconductor wafer after grinding. Therefore, the peeling method for satisfying these characteristics is earnestly examined. As a peeling method, for example, a method utilizing dissolution of a pressure-sensitive adhesive with a solvent, a method of improving peelability by lowering adhesiveness by heating, a method of modifying or extinguishing a pressure-sensitive adhesive by laser irradiation, etc. are known. (Patent Documents 1 and 2).

Patent 4565804 specification Patent No. 4936667 specification

  However, the dissolution of the adhesive with the solvent takes time, and thus the productivity tends to be reduced. In addition, in the method of reducing the adhesiveness by heating, there is a concern about the influence of the heating on the semiconductor element, and since the heat resistance is inferior, it can not be used in a process application for forming a through electrode or the like. On the other hand, in the method of modifying or extinguishing the adhesive by laser irradiation, introduction of expensive laser equipment is indispensable, and considerable investment is essential for application of such a process.

  Further, most of the pressure-sensitive adhesive is in the form of liquid, and is applied to an electronic component such as a semiconductor wafer or a support by spin coating or the like, and formed into a film by heating, UV irradiation or the like. However, in such a case, the thickness of the electronic component after processing is likely to vary in the individual electronic components due to the variation in the thickness of the adhesive applied at the time of application. There are issues such as the need to discard the material.

  Furthermore, electronic components such as semiconductor wafers to be processed are not limited to those having high smoothness, and there is also an increasing trend to process wafers having solder balls on the circuit surface and connection terminals exceeding 100 μm in height. When processing a semiconductor wafer or the like provided with such a connection terminal, it is relatively difficult to bury large irregularities (steps) and to separate the adhesive from the surface having the irregularities. That is, if the temporary fixing material is made too low in elasticity, which emphasizes the embeddability of the unevenness, the temporary fixing material is deformed and exfoliated in the process of applying external stress such as the back grinding process, and the process can not be conducted. . On the other hand, when the temporary fixing material is made too elastic, if the adhesive strength of the solder ball is insufficient, there is a concern that the solder ball may be dropped when the adhesive is peeled off.

  The present invention has been made in view of the above circumstances, and can satisfactorily process an electronic component having irregularities such as a semiconductor wafer or a device provided with a connection terminal, and can also provide an electronic component and a support after processing. An object of the present invention is to provide a temporary fixing resin film and a temporary fixing resin film sheet which can be easily peeled from a body, and a method of manufacturing a semiconductor device using the temporary fixing resin film.

  In order to solve the above problems, the present invention is a method for manufacturing a semiconductor device by processing a semiconductor wafer or element having a connection terminal on one main surface, and a first layer containing a thermoplastic resin. And a first step of preparing a temporary fixing resin film provided on the first layer and having a second layer containing a thermoplastic resin and a curable component, and a connection terminal of a semiconductor wafer or element And a second step of bonding the temporary fixing resin film from the first layer side to the provided surface, and the thickness X of the first layer in the temporary fixing resin film prepared in the first step is a connection The semiconductor film having a first layer interposed between the second layer and the connection terminal in the temporary fixing resin film smaller than the height T of the terminal and bonded to the semiconductor wafer or the element in the second step How to manufacture the device To provide.

  According to the method of the present invention, the resin film for temporary fixing having the above specific configuration is bonded and temporarily fixed to the semiconductor wafer or element provided with the connection terminal so as to have the above specific structure, The semiconductor wafer or the device can be processed well, and the temporary fixing material can be easily peeled off from the processed semiconductor wafer or device and the support. The following can be considered as the reason why such an effect can be obtained. Interposing the first layer between the second layer and the connection terminal while fully embedding the connection terminal by the first layer using the resin film having the first layer and the second layer, ie connection The temporary fixing material can be easily peeled off from the processed semiconductor wafer or element and the support by making the first layer into a composition having excellent peeling characteristics by not bringing the terminal and the second layer into contact with each other. Further, by bonding the first layer having a thickness smaller than the height T of the connection terminal and the second layer containing a hardenable component and capable of being highly elastic as described above to the semiconductor wafer or element, It is possible to provide a structure in which the second layer capable of developing physical properties (for example, shear viscosity) necessary at the time of processing bites into between the connection terminals, so that the semiconductor wafer or element and the support can be sufficiently fixed. Deformation and peeling of the temporary fixing material in the step of applying an external stress such as, can be sufficiently suppressed. Furthermore, both the first layer and the second layer contain a thermoplastic resin, and the interface between both layers is shaped like a wave corresponding to the unevenness of the connection terminal, thereby increasing the anchor effect and peeling off the interface. It is possible to sufficiently suppress the occurrence of etc., and to sufficiently prevent the occurrence of the remaining fracture of the temporary fixing material at the time of peeling.

  The thickness X is preferably 0.3 T or more from the viewpoint of further improving the step embedding property and the peeling property.

  In addition, from the viewpoint of facilitating processing, in the resin film for temporary fixing that is bonded to the semiconductor wafer or the element in the second step, the main surface on which the connection terminal of the semiconductor wafer or the element is provided, and the second layer It is preferable that the shortest distance with is 0.1T or more and less than 1.0T.

  Furthermore, from the viewpoint of achieving both processing characteristics and peeling characteristics at a high level, the first layer has a storage elastic modulus at 25 ° C. after curing of 0.01 to 1000 MPa, and the second layer is The storage elastic modulus at 25 ° C. after curing is preferably 1 to 10000 MPa.

  The present invention also includes a first layer containing a thermoplastic resin, and a second layer provided on the first layer, the second layer containing a thermoplastic resin and a curable component, on one of the main surfaces A temporary fixing resin film for temporarily fixing a semiconductor wafer or an element provided with a connection terminal is provided.

  According to the resin film for temporary fixing of the present invention, even when the surface to be temporarily fixed has unevenness as in a semiconductor wafer or element in which a connection terminal is provided on one main surface, the semiconductor wafer or element While being able to perform processing favorably, it can be easily peeled off from the processed semiconductor wafer or element and support. In addition, since the resin film for temporary fixing of the present invention is in the form of a film, the layer thickness of the first layer can be easily controlled according to the height of the connection terminal, and the embedding failure due to the thickness variation And peeling defects can be reduced. In addition, the resin film for temporary fixing according to the present invention can be bonded onto a semiconductor wafer or an element or a support by a simple method such as lamination, and is excellent in workability.

  In the resin film for temporary fixation of the present invention, it is preferable to make the thickness X of the first layer smaller than the height T of the connection terminal from the viewpoint of facilitating processing.

  Moreover, it is preferable that thickness X is 0.3 T or more from a viewpoint of improving a level | step difference embedding property and the peeling characteristic further.

  Furthermore, from the viewpoint of achieving both processing characteristics and peeling characteristics at a high level, the first layer has a storage elastic modulus at 25 ° C. after curing of 0.01 to 1000 MPa, and the second layer has after curing It is preferable that the storage elastic modulus in 25 degreeC in in is 1.0-10000 MPa.

  The present invention also provides a temporary fixing resin film sheet comprising a support film having releasability and the temporary fixing resin film according to the present invention provided on the support film.

  According to the present invention, it is possible to satisfactorily process an electronic component having irregularities such as a semiconductor wafer or a device provided with a connection terminal, and to temporarily remove the electronic component and the support after processing. The manufacturing method of the semiconductor device using the resin film for fixation, the resin film sheet for temporary fixation, and the resin film for temporary fixation can be provided.

(A) is a top view which shows one Embodiment of the resin film sheet for temporary fixing which concerns on this invention, (B) is a schematic cross section along the II line of (A). (A) is a top view which shows one Embodiment of the 1st resin sheet for producing the resin film sheet for temporary fixation which concerns on this invention, (B) is an II-II line | wire of (A). It is a schematic cross section along. (A) is a top view which shows one Embodiment of the 2nd resin sheet for producing the resin film sheet for temporary fixation which concerns on this invention, (B) is a III-III line of (A). It is a schematic cross section along. (A) is a top view which shows other embodiment of the resin film sheet for temporary fixing which concerns on this invention, (B) is a schematic cross section along the IV-IV line of (A). (A), (B) and (C) are schematic cross-sectional views for explaining one embodiment of a method for processing an electronic component (semiconductor wafer), and (D) shows an electron after processing, for example, after grinding It is a top view which shows components. It is a schematic cross section for demonstrating one Embodiment of the isolation | separation process which isolate | separates the processed electronic component (semiconductor wafer) from a support body and the resin film for temporary fixing. It is a schematic cross section for describing one Embodiment of the manufacturing method of an electronic device apparatus (semiconductor device). It is sectional drawing when the resin film for temporary fixing embeds the unevenness | corrugation (connection terminal) of an electronic component (semiconductor wafer), (A) is a state with which the conditions of this embodiment are satisfied, (B) is a state of this embodiment. Indicates a state in which the condition is not satisfied.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and overlapping descriptions will be omitted. Further, the dimensional ratio in the drawings is not limited to the illustrated ratio. However, the present invention is not limited to the following embodiments.

[Resin film for temporary fixing]
The temporary fixing resin film according to the present embodiment includes a first layer containing a thermoplastic resin, and a second layer containing a thermoplastic resin and a curable component provided on the first layer. Prepare.

  The resin film for temporary fixing according to the present embodiment can be used as a temporary fixing material for temporarily fixing an electronic component having irregularities such as a semiconductor wafer or an element provided with a connection terminal as a workpiece to a support. . The workpiece temporarily fixed to the support is subjected to predetermined processing, and then separated from the temporary fixing material, and can be used for manufacturing an electronic device and the like.

  The resin film for temporary fixing according to the present embodiment has two layers different in composition to adjust the peel strength of the layer in contact with the electronic component having asperities and the peel strength of the layer in contact with the support. It can be easily peeled off from both the electronic component and the support that are fixed via the temporary fixing resin film. Further, since the film-like pressure-sensitive adhesive is used, the film thickness can be controlled more easily, and variations in thickness among the individual electronic components can be reduced. Moreover, the resin film for temporary fixing which concerns on this embodiment can be bonded together on an electronic component or a support body by simple methods, such as lamination, and it is excellent also in workability.

  Fig. 1 (A) is a top view showing an embodiment of a resin film sheet for temporary fixation according to the present embodiment, and Fig. 1 (B) is a schematic cross section taken along the line I-I of Fig. 1 (A). FIG.

  The temporary fixing resin film sheet 1 shown in FIG. 1 includes a support film 10, a first layer 21, a second layer 22, and a support film 10 in this order, and from the first layer 21 and the second layer 22. The temporary fixing resin film 20 is provided. The temporary fixing resin film sheet 1 can be used to bond the first layer 21 to the uneven surface of the electronic component having the unevenness to embed the unevenness.

(Support film)
The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. The support film 10 is preferably polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide or polyimide from the viewpoint of excellent flexibility and toughness. Moreover, it is preferable to use the film in which the release process was performed by a silicone type compound, a fluorine type compound, etc. as a support film from a viewpoint of peelability improvement with a resin film (resin layer).

  The thickness of the support film 10 may be changed as appropriate depending on the intended flexibility, but is preferably 3 to 350 μm. If the thickness is 3 μm or more, the film strength is sufficient, and if it is 350 μm or less, sufficient flexibility tends to be obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 to 200 μm, and still more preferably 7 to 150 μm.

(First layer)
The first layer can include a first thermoplastic resin (hereinafter sometimes referred to as (a1) thermoplastic resin). (A1) As the thermoplastic resin, any resin having thermoplasticity at least before the film is laminated on the electronic component or the support can be used without particular limitation. The thermoplastic resin may be a resin that forms a crosslinked structure by heating or the like.

  As the thermoplastic resin (a1), a polymer having a crosslinkable functional group can be used. Examples of the polymer having a crosslinkable functional group include thermoplastic polyimide resin, (meth) acrylic copolymer having a crosslinkable functional group, urethane resin polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin, etc. Be Among these, (meth) acrylic copolymers having a crosslinkable functional group are preferable. In the present specification, (meth) acrylic is used in the meaning of either acrylic or methacrylic. A thermoplastic resin may be used individually by 1 type, and may be used in combination of 2 or more type.

  As the (meth) acrylic copolymer having a crosslinkable functional group, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or a commercially available product may be used.

  The polymer having a crosslinkable functional group may have a crosslinkable functional group in the polymer chain or may have it at the polymer chain terminal. As a crosslinkable functional group, an epoxy group, an alcoholic hydroxyl group, a phenolic hydroxyl group, a carboxyl group etc. are mentioned. The crosslinkable functional group may be used alone or in combination of two or more.

  (A1) The glass transition temperature (hereinafter sometimes referred to as “Tg”) of the thermoplastic resin is preferably −50 ° C. to 50 ° C., and more preferably −30 ° C. to 20 ° C. . If the Tg is in such a range, more sufficient fluidity can be obtained while suppressing the deterioration of the handleability due to the increase in the tackiness of the first layer, and furthermore, the sheet after curing Since the elastic modulus can be made lower, it can be suppressed that the peel strength becomes too high. Moreover, if Tg is the above-mentioned range, while being able to control the fall of the handleability and exfoliation nature by the softness of the 1st layer becoming high too much, low temperature sticking property can be improved and especially electronic parts The embedding at 150 ° C. or less is further facilitated with respect to the asperities.

  Tg is a midpoint glass transition temperature value when a thermoplastic resin is measured using differential scanning calorimetry (DSC, for example, “Thermo Plus 2” manufactured by Rigaku Corporation). Specifically, the above Tg is a midpoint glass transition calculated by the method according to JIS K 7121: 1987, measuring the change in heat quantity under the conditions of a temperature rising rate of 10 ° C./min and a measurement temperature of -80 to 80 ° C. It is a temperature.

  The weight average molecular weight of the thermoplastic resin (a1) is not particularly limited, and is preferably 100,000 to 1,200,000, and more preferably 200,000 to 1,000,000. When the weight average molecular weight of the thermoplastic resin is in such a range, it is easier to secure the film forming property and the flowability. The weight average molecular weight is a polystyrene conversion value using a calibration curve with standard polystyrene in gel permeation chromatography (GPC).

  The first layer is added to the (a1) thermoplastic resin and, if necessary, a silicone compound (hereinafter sometimes referred to as (a2) silicone compound), a curing accelerator (hereinafter referred to as (a3) curing accelerator And other ingredients may be included.

  As the silicone compound (a2), any silicone compound having a polysiloxane structure can be used without particular limitation. For example, silicone modified resin, straight silicone oil, non-reactive modified silicone oil, reactive modified silicone oil etc. may be mentioned. A silicone compound can be used individually by 1 type or in combination of 2 or more types.

  When the first layer contains a silicone compound, when the resin film for temporary fixation of the present embodiment is peeled from the electronic component, it becomes possible to peel more easily without using a solvent.

  As the silicone-modified resin, any silicone-modified resin can be used without particular limitation, but a silicone-modified alkyd resin is preferred. When the first layer contains a silicone-modified alkyd resin, excellent peelability after processing can be secured.

  As a method for obtaining a silicone-modified alkyd resin, for example, (i) an ordinary synthesis reaction for obtaining an alkyd resin, that is, an organopolysiloxane as an alcohol component when polyalcohol is reacted with a fatty acid, a polybasic acid, etc. The method of making it react simultaneously, (ii) The method of making organopolysiloxane react with the common alkyd resin synthesize | combined previously is mentioned.

  Examples of polyhydric alcohols used as raw materials for alkyd resins include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, neopentyl glycol, etc., glycerin, trimethylol ethane, Examples thereof include trihydric alcohols such as trimethylolpropane, and dihydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannit and sorbite. One of these may be used alone, or two or more of these may be used in combination.

  Examples of polybasic acids used as raw materials for alkyd resins include aromatic polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid and trimellitic anhydride, and aliphatic saturated poly acids such as succinic acid, adipic acid and sebacic acid. Aliphatic unsaturated polybasic acids such as basic acids, maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride, cyclopentadiene-maleic anhydride adducts, terpene-maleic anhydride adducts, rosin-maleic anhydride Examples thereof include polybasic acids obtained by the Diels-Alder reaction of acid adducts and the like. One of these may be used alone, or two or more of these may be used in combination.

  The alkyd resin may further contain a modifier or a crosslinking agent.

  Modifiers include octylic acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linoleic acid, eleostearic acid, licinoleic acid, dehydrated ricinoleic acid, coconut oil, linseed oil, tung oil, tung oil, castor oil, dehydrated Castor oil, soybean oil, safflower oil, fatty acids thereof and the like can be used. One of these may be used alone, or two or more of these may be used in combination.

  As a crosslinking agent, amino resins, such as a melamine resin and a urea resin, a urethane resin, an epoxy resin, a phenol resin etc. are mentioned, for example. Among these, an amino resin is preferable because an amino alkyd resin crosslinked by an amino resin is obtained. A crosslinking agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  Silicone modified alkyd resins can be used in combination with acidic catalysts as curing catalysts. There is no restriction | limiting in particular as an acidic catalyst, It can select suitably from the well-known acidic catalysts as a crosslinking reaction catalyst of alkyd resin, and can be used. As such an acidic catalyst, for example, organic acidic catalysts such as p-toluenesulfonic acid and methanesulfonic acid are preferable. An acidic catalyst may be used individually by 1 type, and may be used in combination of 2 or more type.

  As the silicone-modified alkyd resin as described above, for example, a commercially available product such as Tesfine TA 31-209E (manufactured by Hitachi Chemical Polymer Co., Ltd., trade name) can be used.

  The modified silicone oil may be used without particular limitation as long as it is compatible with the (a1) thermoplastic resin, and polyether modified silicone, alkyl modified silicone and epoxy modified silicone are preferable. As such a modified silicone oil, SH3773M, L-7001, SH-550, SH-710 manufactured by Toray Dow Corning Co., Ltd., X-22-163, KF-105, X manufactured by Shin-Etsu Silicone Co., Ltd. -22-163B, X-22-163C, etc. are mentioned.

  0-100 mass parts is preferable with respect to 100 mass parts of (a1) thermoplastic resins, and, as for the compounding quantity of (a2) silicone compound in a 1st layer, 1-80 mass parts is more preferable. (A2) If the compounding amount of the silicone compound is within the above range, it is possible to achieve both adhesiveness at the time of electronic component processing and releasability after processing at a higher level.

  (A3) As the curing accelerator, for example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5,4,0] undecene-7-tetraphenyl borate etc. are mentioned. One of these may be used alone, or two or more of these may be used in combination.

  In the first layer, when the thermoplastic resin (a1) contains a (meth) acrylic copolymer having an epoxy group, a curing accelerator that promotes the curing of the epoxy group contained in the acrylic copolymer is included. Is preferred.

  The blending amount of the (a3) curing accelerator in the first layer is preferably 0.01 to 2.0 parts by mass with respect to 100 parts by mass of the (a1) thermoplastic resin. (A3) If the compounding amount of the curing accelerator is (a1) 0.01 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin, the first layer is sufficiently cured in the heat history in the manufacturing process of the semiconductor element As a result, the electronic component and the support can be fixed more reliably. (A3) If the compounding amount of the curing accelerator is 2.0 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin (a1), the melt viscosity of the resin film for temporary fixation is hardly increased by heating in the manufacturing process And the storage stability of the film tends to be further improved.

  Examples of other components include antioxidants, inorganic fillers, organic fillers, silane coupling agents, and curable components.

  Examples of the antioxidant include phenol-based antioxidants and amine-based antioxidants of radical chain inhibitors, phosphorus-based antioxidants of peroxide decomposition agents, and sulfur-based antioxidants. An antioxidant can be added for the purpose of improving the heat resistance of the resin film for temporary fixing. An antioxidant may be used individually by 1 type, and may be used in combination of 2 or more type.

  The compounding amount of the antioxidant in the first layer is preferably 10 parts by mass or less, and 8 parts by mass with respect to 100 parts by mass of the thermoplastic resin (a1), from the viewpoint of the handleability of the resin film for temporary fixation in the B-stage state. It is more preferably at most 5 parts by mass, and even more preferably at most 5 parts by mass. The lower limit of the content of the antioxidant is not particularly limited, and is preferably 0.1 parts by mass or more with respect to 100 parts by mass of the (a1) thermoplastic resin. By making content of antioxidant into the said range, the heat resistance of the resin film for temporary fixing in a C-stage state can be improved.

  Examples of the inorganic filler include metal fillers such as silver powder, gold powder and copper powder; and nonmetallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide and ceramic. The inorganic filler can be selected according to the desired function. The metal filler can be added for the purpose of imparting thixotropy to the film. The nonmetallic inorganic filler can be added for the purpose of imparting low thermal expansion and low hygroscopicity to the film. An inorganic filler may be used individually by 1 type, and may be used in combination of 2 or more type.

  The inorganic filler is preferably one having an organic group on the surface. By modifying the surface of the inorganic filler with an organic group, it is easy to improve the dispersibility in an organic solvent, and the adhesion and heat resistance of the film when preparing a resin composition for forming a film. It becomes.

  The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher . It is possible to confirm that the surface of the inorganic filler is modified by the organic group by UV (ultraviolet) measurement, IR (infrared) measurement, XPS (X-ray photoelectron spectroscopy) measurement or the like.

In formula (B-1), X represents an organic group selected from the group consisting of phenyl group, glycidoxy group, acryloyl group, methacryloyl group, mercapto group, amino group, vinyl group, isocyanate group and methacryloxy group; Is an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represent an alkyl group having 1 to 10 carbon atoms. As a C1-C10 alkyl group, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an isopropyl group, an isobutyl group is mentioned, for example Be The alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group and a pentyl group from the viewpoint of easy availability. From the viewpoint of heat resistance, X is preferably an amino group, a glycidoxy group, a mercapto group and an isocyanate group, and more preferably a glycidoxy group and a mercapto group. From the viewpoint of suppressing the film fluidity at the time of high heat and improving the heat resistance, s in the formula (B-1) is preferably 0 to 5, and more preferably 0 to 4.

  Preferred silane coupling agents are, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3- Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propanamine, Examples include N, N'-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylene propyltrialkoxysilane, and polyethoxydimethylsiloxane. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane are preferable, trimethoxyphenylsilane, 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferred. A silane coupling agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  The amount of the coupling agent used is preferably 0.01 to 50 parts by mass, preferably 0.05 parts by mass, with respect to 100 parts by mass of the inorganic filler, from the viewpoint of achieving a balance between the effect of improving heat resistance and storage stability. Part to 20 parts by mass is more preferable, and from the viewpoint of improving heat resistance, 0.5 to 10 parts by mass is further preferable.

  The compounding amount of the inorganic filler in the first layer is 300 parts by mass with respect to 100 parts by mass of the thermoplastic resin (a1) from the viewpoint of improving the handleability of the resin film for temporary fixation in the B-stage state and improving the low thermal expansion. A mass part or less is preferable, 200 mass parts or less are more preferable, and 100 mass parts or less are still more preferable. There is no restriction | limiting in particular in the minimum of content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins. By making content of an inorganic filler into the said range, it exists in the tendency which can provide a desired function, fully securing the adhesiveness of a 1st layer.

  Examples of the organic filler include carbon, rubber fillers, silicone particles, polyamide particles and polyimide particles.

  300 mass parts or less are preferable with respect to 100 mass parts of (a1) thermoplastic resins, as for the compounding quantity of the organic filler in a 1st layer, 200 mass parts or less are more preferable, and 100 mass parts or less are still more preferable. There is no restriction | limiting in particular in the minimum of content of an organic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

  In addition, the first layer can contain a curable component such as an epoxy resin, a phenol resin, or a bismaleimide resin.

(Second layer)
The second layer may contain a second thermoplastic resin (hereinafter sometimes referred to as (b1) thermoplastic resin) and a curable component (hereinafter sometimes referred to as (b2) curable component). it can.

  As the thermoplastic resin (b1), any resin having thermoplasticity at least before the film is laminated to the electronic component or the support can be used without particular limitation. The thermoplastic resin may be a resin that forms a crosslinked structure by heating or the like.

  As the thermoplastic resin (b1) used in the present embodiment, those exemplified as the thermoplastic resin (a1) described above can be used. As the (b1) thermoplastic resin in the second layer, one type may be used alone, or two or more types may be used in combination.

  As the thermoplastic resin (b1), a polymer having a crosslinkable functional group can be used. Examples of the polymer having a crosslinkable functional group include thermoplastic polyimide resin, (meth) acrylic copolymer having a crosslinkable functional group, urethane resin polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin, etc. Be Among these, (meth) acrylic copolymers having a crosslinkable functional group are preferable.

  The polymer having a crosslinkable functional group may have a crosslinkable functional group in the polymer chain or may have it at the polymer chain terminal. Specific examples of the crosslinkable functional group include epoxy group, alcoholic hydroxyl group, phenolic hydroxyl group, carboxyl group and the like. The crosslinkable functional group may be used alone or in combination of two or more.

  The Tg of the thermoplastic resin (b1) is preferably -50 ° C to 50 ° C, and more preferably -30 ° C to 20 ° C. If the Tg is in such a range, it is possible to obtain more sufficient fluidity while suppressing that the tackiness of the second layer is excessively increased to deteriorate the handleability, and further, the second layer after curing Since it becomes easy to adjust the elastic modulus of a layer to a suitable range, it can control more that peel strength becomes high too much.

  The weight average molecular weight of the thermoplastic resin (b1) is not particularly limited, and is preferably 100,000 to 1,200,000, and more preferably 200,000 to 1,000,000. If the weight average molecular weight of the thermoplastic resin is in such a range, it is easy to secure the film forming property and the flowability.

  There is no restriction | limiting in particular as a curable component (b2), A thermosetting resin is preferable.

  As a thermosetting resin, an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, a urea resin etc. are mentioned, for example. These can be used alone or in combination of two or more. The thermosetting resin is preferably an epoxy resin from the viewpoint of obtaining a second layer having excellent heat resistance, workability and reliability.

  The epoxy resin is not particularly limited as long as it cures and has a heat-resistant function. As the epoxy resin, a bifunctional epoxy resin such as bisphenol A epoxy, a novolac epoxy resin such as phenol novolac epoxy resin, and a cresol novolac epoxy resin can be used. In addition, as the epoxy resin, generally known ones such as polyfunctional epoxy resin, glycidyl amine type epoxy resin, heterocycle-containing epoxy resin, alicyclic epoxy resin, modified epoxy resin and the like can be applied.

  A commercial item can be used for an epoxy resin. As bisphenol A type epoxy resin, Mitsubishi Chemical Corporation jER series (jER807, jER815, jER825, jER827, jER 828, jER 834, jER1001, jER1004, jER1007, jER1009, "jER" is a registered trademark), manufactured by Dow Chemical Co. DER-330, DER-301, DER-361, EP-4000S, EP-4000L, EP-4003S, EP-4010S manufactured by ADEKA Co., Ltd., and YD8125, YDF8170 manufactured by Nippon Steel Sumikin Chemical Co., Ltd., and the like. Examples of the phenol novolac epoxy resin include jER152 and jER154 manufactured by Mitsubishi Chemical Corporation, EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., and the like. As o-cresol novolac type epoxy resins, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., YDCN700- manufactured by Nippon Steel Sumikin Chemical Co., Ltd. 3, YDCN 700-7, YDCN 700-10, YDCN 704 and the like. As polyfunctional epoxy resin, jER1031S made by Mitsubishi Chemical Co., Ltd., Araldite 0163 made by Ciba Specialty Chemicals Co., Ltd., Denacol EX-611 made by Nagase ChemteX Co., Ltd., EX-614, EX-614B, EX-622B, EX -512, EX-521, EX-421, EX-411, EX-321 and the like ("Araldite", "Denacol" are registered trademarks). As the amine type epoxy resin, jER604 manufactured by Mitsubishi Chemical Co., Ltd., YH-434 manufactured by Nippon Steel Sumikin Chemical Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., ELM-120 manufactured by Sumitomo Chemical Co., Ltd. Etc. Examples of the heterocycle-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL 4234, ERL 4299, ERL 4221, ERL 4206, etc. manufactured by Dow Chemical. Examples of the modified epoxy resin include jERYX7105, jERYX7110, jERYX7400 manufactured by Mitsubishi Chemical Corporation, and EPR-4030, EPU-73B and EP-49-23 manufactured by ADEKA Corporation. These epoxy resins may be used alone or in combination of two or more.

  When using an epoxy resin as a thermosetting resin, it is preferable to use it together with an epoxy resin curing agent.

  As the epoxy resin curing agent, known curing agents that are usually used can be used. As the epoxy resin curing agent, for example, bisphenols having two or more phenolic hydroxyl groups in one molecule, such as amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, bisphenol S, etc. Examples thereof include phenol resins such as phenol novolac resin, bisphenol A novolac resin, and cresol novolac resin. In particular, from the viewpoint of excellent curing physical properties and storage stability, the epoxy resin curing agent is preferably a phenol resin such as a phenol novolac resin, a bisphenol A novolac resin, and a cresol novolac resin.

  Among the above-mentioned phenolic resin curing agents, preferred are, for example, Phenolite LF2882, Phenolite LF 2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenolite VH 4170 manufactured by DIC Corporation. H-1 manufactured by Meiwa Kasei Co., Ltd., Mirex XL series manufactured by Mitsui Chemicals, Inc., Millex XLC series, Millex RN series, Mirex RS series, Mirex VR series, HC100 series manufactured by Air Water Co., Ltd., HC200 series, HC500 series, HC600 series, HC900 series etc. are mentioned ("Phenolite", "MILEX" are registered trademarks).

  The compounding quantity of (b2) curable component in a 2nd layer is 5-500 mass parts with respect to 100 mass parts of (b1) thermoplastic resins, and 10-300 mass parts is more preferable. If the compounding quantity of a curable component is in the said range, the resin film for temporary fixing can have sufficient low-temperature affixing property, heat resistance, curability, and releasability. When the compounding amount is 5 parts by mass or more, the adhesion to a support and heat resistance are improved, and the retention during back grinding is also improved, and the wafer tends to be less likely to be broken. On the other hand, if the compounding amount is 500 parts by mass or less, the viscosity before curing is unlikely to be excessively lowered and can be cured in a relatively short time, and the retention of the electronic component to the support and the removability from the support It tends to be compatible.

  The second layer is added to the (b1) thermoplastic resin and the (b2) curable component, and, if necessary, a silicone compound (hereinafter sometimes referred to as (b3) silicone compound), a curing accelerator (hereinafter referred to as (B4) may be referred to as a curing accelerator) and other components may be included.

  As the silicone compound (b3), those described above as the silicone compound (a2) can be used. 0-100 mass parts is preferable with respect to 100 mass parts of (b1) thermoplastic resins, and, as for the compounding quantity of (b3) silicone compound in a 2nd layer, 0.1-80 mass parts is more preferable. (B3) When the compounding amount of the silicone compound is in the above range, it is possible to make the adhesiveness at the time of processing of the electronic component and the releasability after processing be compatible.

  As the curing accelerator (b4), those described above as the curing accelerator (a3) can be used. In the second layer, when the (b1) thermoplastic resin contains a (meth) acrylic copolymer having an epoxy group, a curing accelerator for promoting the curing of the epoxy group contained in the acrylic copolymer is included. Is preferred.

  As for the compounding quantity of (b4) hardening accelerator in a 2nd layer, 0.01-2.0 mass parts is preferable with respect to 100 mass parts of (b1) thermoplastic resins. (B4) When the compounding amount of the curing accelerator is 0.01 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin (b1), the second layer is sufficiently cured in the heat history in the manufacturing process of the semiconductor element As a result, the electronic component and the support can be fixed more reliably. (B4) If the compounding amount of the curing accelerator is 2.0 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin (b1), the melt viscosity of the resin film for temporary fixation is hardly increased by heating in the manufacturing process And the storage stability of the film tends to be further improved.

  Examples of other components include antioxidants, inorganic fillers, organic fillers, and silane coupling agents.

  Examples of the antioxidant include phenol-based antioxidants and amine-based antioxidants of radical chain inhibitors, phosphorus-based antioxidants of peroxide decomposition agents, and sulfur-based antioxidants. An antioxidant can be added for the purpose of improving the heat resistance of the resin film for temporary fixing. An antioxidant may be used individually by 1 type, and may be used in combination of 2 or more type.

  The compounding amount of the antioxidant in the second layer is preferably 10 parts by mass or less, and 8 parts by mass with respect to 100 parts by mass of the thermoplastic resin (a1), from the viewpoint of the handleability of the resin film for temporary fixation in the B-stage state. It is more preferably at most 5 parts by mass, and even more preferably at most 5 parts by mass. The lower limit of the content of the antioxidant is not particularly limited, and is preferably 0.1 parts by mass or more with respect to 100 parts by mass of the (a1) thermoplastic resin. By making content of antioxidant into the said range, the heat resistance of the resin film for temporary fixing in a C-stage state can be improved.

  As the inorganic filler, those described above can be used. The compounding amount of the inorganic filler in the second layer is 300 parts by mass with respect to 100 parts by mass of the thermoplastic resin (b1) from the viewpoint of improvement in the handleability of the resin film for temporary fixation in the B-stage state and improvement in low thermal expansion. The amount is preferably not more than 200 parts by mass, more preferably 100 parts by mass or less. There is no restriction | limiting in particular in the minimum of content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of (b1) thermoplastic resins. By making content of an inorganic filler into the said range, a desired function can be provided, fully ensuring the adhesiveness of a 2nd layer.

  As the organic filler, those described above can be used. The amount of the organic filler in the second layer is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to 100 parts by mass of the (b1) thermoplastic resin. There is no restriction | limiting in particular in the minimum of content of an organic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

(Characteristics of first layer and second layer)
The thickness X of the first layer 21 is not particularly limited, and the thickness after drying is a semiconductor from the viewpoint of sufficiently embedding irregularities on the surface of an electronic component such as a semiconductor element and securing sufficient releasability. It is preferable that the height is smaller than the height of unevenness of the surface of the electronic component such as the element, for example, the height T of the connection terminal of the semiconductor wafer or the element provided with the connection terminal. The thickness X of the first layer 21 is preferably 5 to 350 μm. If the thickness is 5 μm or more, the variation in thickness during film formation decreases, and the thickness is sufficient, so that the strength of the cured film or the cured product of the film becomes good, and electrons such as semiconductor elements The unevenness of the surface of the part can be embedded more sufficiently. If the thickness is 350 μm or less, it is difficult to crush when pasted together with the second layer 22, so variations in the thickness of the first layer are unlikely to occur, and the residual solvent in the first layer is sufficiently dried. The amount can be easily reduced, and the foaming when the cured product of the first layer is heated can be further reduced.

  The thickness Y of the second layer 22 is not particularly limited, and is preferably 10 to 350 μm from the viewpoint of sufficiently fixing the electronic component and the transport support. If the thickness is 10 μm or more, the variation in thickness at the time of coating is reduced, and the thickness is sufficient, so the strength of the film or the cured product of the film becomes good, and the support for electronic parts and transport It can fix the body more fully. If the thickness is 350 μm or less, it is difficult to be crushed when pasted together with the first layer 21, so variations in the thickness of the second layer are unlikely to occur, and residual solvent in the second layer due to sufficient drying It is easy to reduce the amount, and it is possible to further reduce the foaming when the cured product of the second layer is heated.

In the present embodiment, the ratio of the thickness of the first layer 21 to the thickness of the second layer 22 preferably satisfies the relationship of Formula (1).
(1/10) X Y Y X 10X (1)
In the formula, X represents the thickness of the first layer 21 and Y represents the thickness of the second layer 22.

  If the ratio of the thickness of the first layer 21 and the thickness of the second layer 22 is within the above range, irregularities on the surface of an electronic component such as a semiconductor element can be sufficiently embedded in the temporary fixing resin film, And the carrier for transport tend to be able to be fixed sufficiently.

  The first layer 21 preferably has a shear viscosity before curing of 10000 Pa · s or less at 120 ° C., and more preferably 8000 Pa · s or less. When the shear viscosity at 120 ° C. is 10000 Pa · s or less, for example, sufficient pressure is applied when pressure of 0.02 to 0.5 MPa is pressurized for 1 to 5 minutes under conditions of 70 to 150 ° C. and 5 to 15 mbar. It is possible to obtain excellent fluidity, so that the embedding property of the electronic component (for example, a semiconductor wafer or element having a connection terminal) having unevenness is further improved, and it is easier to crimp to the electronic component without generating a void. Become. The shear viscosity at 120 ° C. may be 100 Pa · s or more.

  The second layer 22 preferably has a shear viscosity before curing of 200 to 30,000 Pa · s at 120 ° C., and 400 to 27,000 Pa · s, from the viewpoint of handleability of the film or adhesion to a support. Is more preferred. If the shear viscosity is 200 Pa · s or more, the handleability of the film is further improved, and if it is 30000 Pa · s or less, sufficient sticking property is easily obtained.

  The shear viscosity is measured by using ARES (manufactured by Rheometric Scientific Co., Ltd.) and raising the temperature at a temperature rising rate of 20 ° C./min while giving 5% distortion to the resin film for temporary fixation. Means a value.

  The storage elastic modulus after curing of the first layer 21 is preferably 0.01 to 1000 MPa at 25 ° C., and more preferably 0.1 to 500 MPa. If the storage elastic modulus at 25 ° C. is 0.01 MPa or more, adhesive residue hardly occurs on the electronic component during the peeling process, and if the storage elastic modulus at 25 ° C. is 1000 MPa or less, the electronic component having irregularities such as bumps during the peeling process Irregularities such as bumps are hard to be broken from (for example, a semiconductor wafer or element having a connection terminal).

  The storage elastic modulus after curing of the second layer 22 is preferably 1 MPa or more at 25 ° C., and more preferably 10 MPa or more. If the storage elastic modulus at 25 ° C. is 1 MPa or more, it tends to be possible to sufficiently fix the electronic component and the support when thinning the electronic component. The storage elastic modulus after curing may be 10000 MPa or less at 25 ° C., or 5000 MPa or less.

  The relationship between the storage modulus after curing of the first layer 21 and the storage modulus after curing of the second layer 22 is higher than that of the first layer 21 after curing. The storage modulus after curing of layer 22 is preferably greater. If the storage elastic modulus after curing has such a relationship, the possibility of the occurrence of adhesive residue on the electronic component during the peeling step is further reduced, and the breakage of bumps and the like on the electronic component is further prevented. In addition, when the electronic component is thinned, the electronic component and the support can be fixed more firmly.

  The storage elastic modulus means a measured value when measured while raising the temperature at a temperature rising rate of 3 ° C./min using a dynamic viscoelasticity measuring apparatus (manufactured by UBM Co., Ltd.).

  The first layer 21 preferably has a 30 ° peel strength to electronic components such as silicon wafers of 500 N / m or less at 25 ° C., and more preferably 450 N / m or less. If the 30 ° peel strength is 500 N / m or less, the first layer and the electronic component can be further peeled without adhesive residue, and the possibility of the electronic component being cracked at the time of peeling tends to be reduced. The 30 ° peel strength may be 10 N / m or more.

  The 30 ° peel strength can be measured as follows. Grooves having a width of 40 μm and a depth of 40 μm are formed at intervals of 100 μm on a 625 μm thick silicon mirror wafer (6 inches) by blade dicing. The provisionally placed silicon mirror wafer thus produced is placed on the stage of a vacuum laminator (LM-50 X 50-S, manufactured by NPC Inc.) so that the step of the stepped silicon mirror wafer is on the top, and the temporary according to the present embodiment. The fixing resin film is placed so that the first layer is stuck to the stepped silicon mirror wafer side. This is heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum laminated to obtain a sample for measurement. The obtained measurement sample is cured and cut out to a width of 10 mm. This is subjected to a peeling test at a speed of 300 mm / min by a peeling tester set so that the peeling angle is 30 °, and the peeling strength at that time is taken as a 30 ° peeling strength.

  The second layer 22 preferably has a 90 ° peel strength to a support, for example a silicon mirror wafer, of 5 to 300 N / m at 25 ° C., and more preferably 6 to 250 N / m. If the 90 ° peel strength is in the above range, the second layer and the support can be peeled without sticking residue. If the 90 ° peel strength is 5 N / m or more, the electronic component and the support can be fixed more firmly in the grinding process, and if 300 N / m or less, the resin film for temporary fixing is peeled from the support Between the second layer and the support without peeling off, which further reduces the possibility of the film remaining on the support.

  The 90 ° peel strength can be measured as follows. A 625 μm thick silicon mirror wafer (6 inches) is placed on the stage of a vacuum laminator (LM-50 X 50-S, manufactured by NPC Co., Ltd.), and the resin film for temporary fixation according to the present embodiment is a second Place the layer to stick to the silicon mirror wafer side. This is heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under the condition of 15 mbar, and vacuum laminated to obtain a sample for measurement. The obtained measurement sample is cured and cut out to a width of 10 mm. This is subjected to a peeling test at a speed of 300 mm / min by a peeling tester set so that the peeling angle is 90 °, and the peeling strength at that time is taken as a 90 ° peeling strength.

  When the resin film for temporary fixing as described above is used, processing of the electronic component can be favorably performed at high temperature, and peeling can be easily performed even at room temperature from the electronic component and the support after processing. As a result, it is possible to prevent adhesive residue on electronic parts and supports.

[Production method of resin film for temporary fixing]
The temporary fixing resin film sheet 1 according to the present embodiment can be manufactured, for example, from the first resin sheet 2 shown in FIG. 2 and the second resin sheet 3 shown in FIG.

  Fig. 2 (A) is a top view showing an embodiment of the first resin sheet, and Fig. 2 (B) is a schematic cross-sectional view along the line II-II in Fig. 2 (A).

  The first resin sheet 2 shown in FIG. 2 is a support film 10 having releasability, a first layer 21 provided on the support film 10, and a side opposite to the support film 10 of the first layer 21. And a protective film 30 provided on the

  FIG. 3A is a top view showing an embodiment of a second resin sheet, and FIG. 3B is a schematic cross-sectional view taken along the line III-III in FIG.

  The second resin sheet 3 shown in FIG. 3 has a support film 10 having releasability, a second layer 22 provided on the support film 10, and a side opposite to the support film 10 of the second layer 22. And a protective film 30 provided on the

  For example, the resin film sheet 1 for temporary fixing peels the protective film 30 from the first resin sheet 2 and the second resin sheet 3, and the first layer 21 surface and the second layer 22 surface are It can manufacture by pasting together by roll lamination etc. at 120 ° C.

  The first layer 21 and the second layer 22 according to this embodiment are prepared by mixing and kneading the above-described components in an organic solvent to prepare a varnish, and applying the prepared varnish on the support film 10 and drying it. Can be formed by the following method. Thus, the resin sheets 2 and 3 provided with the first layer 21 or the second layer 22 on the support film 10 are respectively manufactured.

  The organic solvent is not particularly limited, and can be determined in consideration of the volatility and the like at the time of film formation from the boiling point. Specifically, from the viewpoint of making it difficult to promote curing of the film during film formation, methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, xylene, etc. Relatively low boiling solvents are preferred. Moreover, for the purpose of improving the film forming property, it is preferable to use, for example, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone and cyclohexanone. One of these solvents may be used alone, or two or more thereof may be used in combination. The solid concentration in the varnish is preferably 10 to 80% by mass.

  The above-mentioned mixing and kneading can be performed by appropriately combining these using a usual stirrer, a grinder, a triple roll, a disperser such as a ball mill and the like. The heating and drying described above are not particularly limited as long as the solvent used is sufficiently vaporized, and the heating and drying can be performed usually by heating at 60 ° C. to 200 ° C. for 0.1 to 90 minutes.

  The 1st layer 21 or the 2nd layer 22 provided on the support film 10 can affix the protective film 30 as needed. In this case, the first resin sheet 2 or the second resin sheet 3 having a three-layer structure including the support film 10, the first layer 21 or the second layer 22, and the protective film 30 described above is obtained. be able to.

  There is no restriction | limiting in particular as the protective film 30, For example, a polyethylene terephthalate, a polybutylene terephthalate, polyethylene naphthalate, polyethylene, a polypropylene is mentioned. The protective film 30 is preferably polyethylene terephthalate, polyethylene or polypropylene from the viewpoint of flexibility and toughness. Also, from the viewpoint of improving the releasability from the temporary fixing resin film (the first layer and the second layer), a film subjected to a release treatment with a silicone compound, a fluorine compound or the like is used as the protective film 30 Is preferred.

  The thickness of the protective film 30 can be suitably set according to the target softness | flexibility, for example, it is preferable that it is 10-350 micrometers. If the thickness is 10 μm or more, the film strength is better, and if it is 350 μm or less, more flexibility is obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 to 200 μm, and still more preferably 20 to 150 μm.

  The first resin sheet 2 or the second resin sheet 3 obtained in this manner can be easily stored, for example, by winding in a roll. Moreover, a roll-shaped film can be cut out in a suitable size, made into a sheet, and stored. Moreover, the resin film sheet 1 for temporary fixing of this embodiment obtained by bonding these films together can also be easily preserve | saved by winding up similarly in roll shape.

  Another embodiment of the temporary fixing resin film sheet according to the present invention is shown in FIG. The temporary fixing resin film sheet 4 shown in FIG. 4 is temporary except that the temporary fixing resin film 20 and the support film 10 on the second layer 22 side are cut in advance according to the shape of the temporary fixing member. It has the same configuration as the fixing resin film sheet 1. In addition, in FIG. 4, although the outer edge part of the resin film 20 for temporary fixing and the support film 10 which were cut | judged is removed, according to the shape of the member to temporarily fix, a notch is provided in the resin film for temporary fixing And the outer edge may be left.

  Moreover, the resin film set provided with the 1st resin sheet 2 and the 2nd resin sheet 3 as other embodiment is mentioned. According to the resin film set of the present embodiment, the first layer and the second layer of these resin sheets are attached to each other at the time of use (when processing an electronic component) and used as a temporary fixing resin film it can.

[Processing method of electronic parts]
The method of processing an electronic component using the temporary fixing resin film according to the present embodiment is roughly divided into the following four steps. (A) temporarily fixing the electronic component and the support via the temporary fixing resin film, (b) processing the electronic component temporarily fixed to the support, and (c) the processed electronic The method includes a separation step of separating the component from the support and the temporary fixing resin film, and (d) a cleaning step of cleaning when there is a residue on the electronic component.

  5 (A), 5 (B) and 5 (C) are schematic cross-sectional views for explaining one embodiment of a method of processing an electronic component, and FIG. 5 (D) shows the electron after processing It is a top view which shows components. In the present embodiment, as the electronic component, the case where the semiconductor wafer 60 in which the connection terminal 62 is provided on one main surface is a workpiece is shown. The connection terminal is not particularly limited, and copper, gold, various solders and the like can be mentioned. In addition, as another electronic component, the semiconductor element, the semiconductor package, the small motor etc. in which the connection terminal is provided in one main surface are mentioned. The material of the electronic component is not particularly limited, and a substrate such as a silicon wafer, a glass wafer, a quartz wafer, a semiconductor wafer, an organic substrate, and a sealing body can be used.

  The thickness of the semiconductor wafer 60 to be processed is not particularly limited, but can be 100 to 800 μm. The height of the connection terminal can be 3 to 300 μm.

<(A) Temporary fixing process>
5A, the temporary fixing resin film 40 of the present embodiment having a two-layer configuration of a first layer 41 and a second layer 42 is interposed between the support 50 and the semiconductor wafer 60, A step of temporarily fixing the semiconductor wafer 60 to the support 50 is shown. At this time, the temporary fixing resin film 40 is disposed such that the first layer 41 is in contact with the connection terminal 62 of the semiconductor wafer 60 and the second layer 42 is in contact with the support 50.

(A-1) Formation of the temporary fixing resin film 40 on the support 50 The second layer 22 side of the temporary fixing resin film 20 is laminated on the support 50 using a roll laminator, a vacuum laminator, or the like. Thus, the temporary fixing resin film 40 can be provided.

  The material of the support of the present embodiment is not particularly limited, and a substrate such as a silicon wafer, a glass wafer, a quartz wafer, a SUS plate, an organic substrate, etc. can be used.

  The support may be subjected to peeling treatment, and the peeling layer 52 can be formed by peeling the whole or a part of the surface of the support 50 as shown in FIG. 5A. The release agent used for the release treatment is not particularly limited. For example, a surface modifier having an elemental fluorine, a polyolefin wax and silicone oil, a silicone oil containing a reactive group, and a silicone-modified alkyd resin are excellent in release properties. Because it is preferable.

(A-2) Bonding of semiconductor wafer 60 Next, the support 50 on which the resin film 40 for temporary fixing is formed is set on a wafer bonding apparatus or a vacuum laminator, and the semiconductor wafer 60 is placed on the first layer 41 side. Press and stick with a press.

  In the case of using a wafer bonding apparatus, for example, using a vacuum press machine EVG520IS (trade name) manufactured by EVG, semiconductors under a pressure of 1 hPa or less, a crimping pressure of 1 MPa, a crimping temperature of 60 ° C. to 200 ° C., and a holding time of 100 seconds to 300 seconds. The wafer 60 and the support 50 can be temporarily fixed via the resin film 40 for temporary fixing.

  In the case of using a vacuum laminator, for example, a vacuum laminator LM-50 × 50-S (trade name) manufactured by NPC Co., Ltd. and a vacuum laminator V130 (trade name) manufactured by Nichigo Morton Co., Ltd. can be used. The pressing conditions are: pressure 1 hPa or less, pressure bonding temperature 40 ° C. to 180 ° C., preferably 60 ° C. to 150 ° C., laminating pressure 0.01 to 0.5 MPa, preferably 0.1 to 0.5 MPa, holding time 1 second to 600 The semiconductor wafer 60 and the support 50 can be temporarily fixed via the temporary fixing resin film 40 in seconds, preferably 30 seconds to 300 seconds.

  In the temporary fixing step of the present embodiment, the resin film for temporary fixing of the present embodiment in which the thickness X of the first layer is smaller than the height T of the connection terminal 62 is prepared and temporarily fixed to the semiconductor wafer. In the resin film 40, the first layer 41 is interposed between the second layer 42 and the connection terminal 62.

  FIG. 8 is a cross-sectional view when the temporary fixing resin film 40 embeds the connection terminal 62 of the semiconductor wafer 60, and (A) shows a state where the conditions of the present embodiment are satisfied. As shown in FIG. 8A, the first layer 41 of thickness a is interposed between the connection terminal 62 and the second layer 42.

  By making the first layer 41 have a composition excellent in peeling characteristics by not bringing the connection terminals 62 and the second layer 42 into contact with each other, the temporary fixing material can be easily peeled from the processed semiconductor wafer and the support. it can. Also, as shown in FIG. 8A, the first layer 41 having a thickness smaller than the height T of the connection terminal and the second layer 42 that includes a hardenable component and can be made highly elastic as shown in FIG. By bonding them together, it is possible to provide a structure in which the second layer 42 capable of expressing physical properties (for example, elastic modulus) necessary at the time of processing bites into between the connection terminals, and the semiconductor wafer 60 and the support 50 are sufficiently provided. While being able to be fixed, it is possible to sufficiently suppress deformation and peeling of the temporary fixing material in the step of applying an external stress such as a back grinding step. Furthermore, the interface between the first layer and the second layer is shaped in a wave shape corresponding to the unevenness of the connection terminal 62, whereby the anchor effect is increased and the occurrence of interface peeling and the like is sufficiently suppressed. It is also possible to sufficiently prevent the occurrence of fracture residue of the fixing material.

  In the present embodiment, the thickness X of the first layer of the temporary fixing resin film to be prepared is preferably 0.3 T or more, and preferably 0.4 T or more, from the viewpoint of further improving the step embedding property and the peeling property. Is more preferably 0.5 T or more. In addition, the thickness X of the first layer of the resin film for temporary fixing to be prepared is less than 1.0 T from the viewpoint of increasing the anchor effect by the second layer biting between the connection terminals and making the processing easier. Is preferably 0.9 T or less.

  The shortest distance between the main surface S1 on which the connection terminal 62 of the semiconductor wafer is provided and the second layer from the viewpoint of increasing the anchor effect by the second layer biting between the connection terminals and further facilitating the processing It is preferable that b in (A) of FIG. 8 is 0.1 T or more and less than 1.0 T, and it is more preferable that it is 0.2 T or more and 0.9 T or less.

  Further, from the viewpoint of further improving the peeling property from the step, the thickness a of the first layer 41 interposed between the connection terminal 62 and the second layer 42, ie, the connection terminal 62 and the second layer 42. And the shortest distance between them is preferably 0.1 μm or more, and more preferably 0.2 μm or more.

(A-3) Curing of the temporary fixing resin film After temporarily fixing the semiconductor wafer 60 and the support 50 through the temporary fixing resin film 40, the temporary fixing resin film 40 is cured. The curing method is not particularly limited as long as the film is cured, and heat or radiation may be used. Among them, heat curing is preferable as a curing method. In the case of curing by heat, the curing conditions are preferably curing at 100 to 200 ° C. for 10 to 300 minutes, more preferably curing for 20 to 210 minutes. When the temperature is 100 ° C. or more, the film is sufficiently cured to hardly cause problems in the processing step. When the temperature is 200 ° C. or less, outgassing is hardly generated during curing of the film, and peeling of the film can be further suppressed. Moreover, if hardening time is 10 minutes or more, a problem will not occur easily in a process process, and if it is 300 minutes or less, working efficiency will not deteriorate easily. The temporary fixing resin film 40 is cured to form a temporary fixing material 70 including the cured first layer 71 and the cured second layer 72.

<(B) Processing process>
The processing steps include grinding, electrode formation, metal wiring formation, protective film formation and the like used at the wafer level. There is no particular limitation on the grinding method, and a known grinding method can be used. Grinding is preferably carried out while cooling the electronic component and the grindstone (such as diamond) with water.

  For example, as shown in FIG. 5B, the grinder 85 is used to grind the back surface of the semiconductor wafer 80, that is, the surface of the semiconductor wafer 80 opposite to the side in contact with the temporary fixing material 70. Thin to 100 μm or less.

  As an apparatus to grind-process, DISCO-made DGP-8761 (brand name) etc. are mentioned, for example, Cutting conditions in this case can be arbitrarily selected according to the thickness and grinding condition of a desired electronic component.

  Specifically, the other steps are metal sputtering for forming electrodes etc., wet etching for etching metal sputtering layer, application of resist for masking metal wiring formation, formation of pattern by exposure and development, and formation of resist Well-known processes, such as peeling, dry etching, formation of metal plating, silicon etching for TSV formation, oxide film formation of a silicon surface, etc. are mentioned.

  In FIG. 5C, after processing such as dry ion etching or Bosch process is performed on the back surface side of the thinned semiconductor wafer 80 to form a through hole, processing such as copper plating is performed to form a through electrode 82. An example is shown.

  Thus, predetermined processing is performed on the semiconductor wafer 80. FIG. 5D is a top view of the semiconductor wafer 80 after processing. The processed semiconductor wafer 80 is further singulated into semiconductor elements by dicing along dicing lines 84.

<(C) Separation step>
FIG. 6 is a schematic cross-sectional view for explaining an embodiment of the separation step of separating the processed semiconductor wafer from the support and the temporary fixing material. The separation step according to the present embodiment includes a first peeling step of peeling the semiconductor wafer and the temporary fixing material from the support, and a second peeling step of peeling the film-like temporary fixing material from the semiconductor wafer. Can. The first peeling step is a step of peeling the semiconductor wafer processed in the processing step from the support, that is, a step of performing various kinds of processing on the thinned semiconductor wafer and peeling it from the support before dicing. It is. As a peeling method, one of the semiconductor wafer or the support is fixed horizontally, the other is lifted at a fixed angle from the horizontal direction, and a protective film is attached to the grinding surface of the semiconductor wafer, The method etc. which peel a protective film from a support body by a peeling system etc. are mentioned, It can employ | adopt without a restriction | limiting especially.

  All of these peeling methods are applicable to this embodiment. As a peeling method, as shown in FIG. 6A, among them, one of the semiconductor wafer 80 or the support 50 is horizontally fixed, and the other is lifted at a fixed angle from the horizontal direction. More suitable, the support can be recovered. In the second peeling step, for example, as shown in FIG. 6B, the peeled semiconductor wafer and the temporary fixing material are transferred onto the dicing tape 90 to horizontally fix the semiconductor wafer 80, thereby forming a film. The semiconductor wafer 80 from which the temporary fixing material is peeled off can be obtained by lifting the end of the temporary fixing material 70 at a fixed angle from the horizontal direction (see FIG. 6C). In the present embodiment, by forming the film-like temporary fixing material using the resin film for temporary fixing according to the present embodiment, a processed semiconductor wafer in which the residue such as adhesive residue is sufficiently reduced can be easily made. You can get it. These peeling methods are usually carried out at room temperature, but may be carried out at a temperature of about 40 to 100 ° C. without damaging the electronic components. In the case of mechanical disassembly, for example, a debonder (manufactured by SUSS, DB12T), a De-Bonding apparatus (manufactured by EVG, EVG805EZD) or the like is used.

<(D) Cleaning process>
A part of the temporary fixing material is likely to remain on the circuit formation surface of the electronic component. When the temporary fixing material partially remains on the circuit formation surface of the peeled electronic component, a cleaning process can be provided to remove the temporary fixing material. The temporary fixing material can be removed, for example, by washing the electronic component.

  The cleaning solution is not particularly limited as long as it can remove the partially remaining resin film for temporary fixation. As such a washing | cleaning liquid, the said organic solvent which can be used for dilution of the resin film composition for temporary fixing is mentioned, for example. One of these organic solvents may be used alone, or two or more thereof may be used in combination.

  Further, when the remaining temporary fixing resin film is difficult to remove, bases and acids may be added to the organic solvent. As examples of bases, amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine and ammonia; and ammonium salts such as tetramethyl ammonium hydroxide can be used. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid and dodecylbenzenesulfonic acid can be used. The addition amount is preferably 0.01 to 10% by mass in terms of concentration in the cleaning solution. In addition, an existing surfactant may be added to the cleaning solution in order to improve the removability of the remaining matter.

  There is no particular limitation on the washing method, and examples thereof include a method of washing with a paddle using the above washing solution, a washing method by spray spraying, and a method of immersing in a washing solution tank. The temperature is preferably 10 to 80 ° C., preferably 15 to 65 ° C. Finally, the wafer is washed with water or alcohol and dried to obtain a thin semiconductor wafer 80.

  In addition, according to the resin film composition for temporary fixing which concerns on this embodiment as mentioned above, since residues, such as adhesive residue, can fully be reduced, it becomes possible to skip a washing process.

  The semiconductor wafer 80 in which the through electrodes 82 are formed is further singulated into semiconductor elements by dicing along the dicing lines 84 (see FIG. 6D).

[Method of Manufacturing Semiconductor Device]
In this embodiment, a semiconductor device can be manufactured by connecting the semiconductor element obtained by the processing method according to the above-described embodiment to another semiconductor element or a semiconductor element mounting substrate.

  FIG. 7 is a schematic cross-sectional view for explaining one embodiment of the method for manufacturing a semiconductor device of the present embodiment. First, the through electrode 86 is formed by the above-described method, and the singulated semiconductor element 100 is prepared (FIG. 7A). Then, the semiconductor device 100 can be obtained by stacking a plurality of semiconductor elements 100 on the wiring substrate 110 (FIG. 7B).

  The preferred embodiment of the resin film for temporary fixation, the method for processing a semiconductor wafer using the resin film for temporary fixation, and the method for manufacturing a semiconductor device provided with the processing method according to the present invention have been described above. The present invention is not limited to the embodiment described above, and appropriate changes may be made without departing from the scope of the invention. That is, the resin film for temporary fixing according to the present invention, the processing method using the same, and the method of manufacturing a semiconductor device can be applied to the processing of various electronic parts and used in a method of manufacturing an electronic device.

  Hereinafter, the present invention will be more specifically described by way of examples. However, the present invention is not limited to the following examples.

[Synthesis of Thermoplastic Resin]
(Resin A)
200 g of deionized water, 70 g of butyl acrylate, 10 g of methyl methacrylate in a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen displacement device (nitrogen inflow tube), and a reflux condenser with a moisture receiver. 10 g of 2-hydroxyethyl methacrylate, 10 g of glycidyl methacrylate, 1.94 g of a 1.8% aqueous polyvinyl alcohol solution, 0.2 g of lauryl peroxide, and 0.06 g of n-octyl mercaptan were blended. Subsequently, N ₂ gas was blown into the flask for 60 minutes to remove air in the system, and then the temperature inside the system was raised to 65 ° C. and polymerization was performed for 5 hours. Further, the temperature inside the system was raised to 90 ° C. and stirring was continued for 2 hours to complete the polymerization. The transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried with a vacuum dryer at 50 ° C. for 6 hours to obtain Resin A as a thermoplastic resin.

  When Resin A was measured by GPC, the weight average molecular weight of Resin A was 400,000 in terms of polystyrene. Moreover, Tg of Resin A was -28 degreeC.

  The measurement of GPC uses GPC (made by Tosoh Corp., SD-8022 / DP-8020 / RI-8020), uses tetrahydrofuran as an eluent and Gelpack GL-A150-S / GL- manufactured by Hitachi Chemical Co., Ltd. as a column. Using A160-S, the flow rate of the eluent was 1.0 mL / min, and the column temperature was 40 ° C.

(Resin B)
200 g of deionized water, 60 g of butyl acrylate, 10 g of methyl methacrylate in a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen displacement device (nitrogen inflow tube), and a reflux condenser with a moisture receiver. 10 g of 2-hydroxyethyl methacrylate, 20 g of glycidyl methacrylate, 1.94 g of a 1.8% aqueous polyvinyl alcohol solution, 0.2 g of lauryl peroxide, and 0.06 g of n-octyl mercaptan were blended. Subsequently, N ₂ gas was blown into the flask for 60 minutes to remove air in the system, and then the temperature inside the system was raised to 65 ° C. and polymerization was performed for 5 hours. Further, the temperature inside the system was raised to 90 ° C. and stirring was continued for 2 hours to complete the polymerization. The transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried with a vacuum dryer at 50 ° C. for 6 hours to obtain Resin B as a thermoplastic resin.

  When Resin B was measured by GPC, the weight average molecular weight of Resin B was 400,000 in terms of polystyrene. Moreover, Tg of Resin B was -20 degreeC.

[Preparation of Resin Composition]
(P1 and P2, L1 and L2)
With the compositions shown in Tables 1 and 2, first layer forming resin compositions P1 and P2 for forming a first layer, and second layer forming resin compositions for forming a second layer Substances L1 and L2 were prepared respectively.

The details of each component in Tables 1 and 2 are as follows.
HTR-860P-3CSP: Acrylic rubber having a weight average molecular weight of 800,000 according to GPC and a Tg of 12 ° C. (manufactured by Nagase ChemteX Co., Ltd.)
HTR-280-CHN: Acrylic rubber having a weight average molecular weight of 900,000 according to GPC and a Tg of 28 ° C. (manufactured by Nagase ChemteX Co., Ltd.)
Resin A: Acrylic rubber Resin B having a weight average molecular weight of 400,000 according to GPC prepared above and Tg-28 ° C. Acrylic rubber YDCN-700-10 having a weight average molecular weight of 400,000 based on GPC prepared above and Tg-20 ° C. Cresol Novolak Type Multifunctional Epoxy Resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
EXA-830 CRP: Bisphenol F type bifunctional epoxy resin (made by DIC Corporation)
HE100C-30: phenol aralkyl resin (manufactured by Air Water Co., Ltd.)
SH3773M: Polyether modified silicone compound (made by Toray Dow Chemical Co., Ltd.)
TA31-209E: Silicone modified alkyd resin (manufactured by Hitachi Chemical Polymer Co., Ltd.)
2PZ-CN: imidazole based curing accelerator (made by Shikoku Kasei Kogyo Co., Ltd.)

[Preparation of resin film for temporary fixation]
(Examples 1 to 9, Comparative Examples 1 to 4)
The resin composition for forming the first layer and the resin composition for forming the second layer obtained above are used in the combination shown in Table 3 or Table 4 in the following procedure: The resin sheet of was produced.

  A resin composition for forming a first layer or a resin for forming a second layer is formed on a release-treated surface of a polyethylene terephthalate film (manufactured by Teijin DuPont Film Co., Ltd., A31, thickness 38 μm) subjected to release treatment as a support film. The composition was applied so that the thickness after drying was the thickness shown in Table 3 or Table 4, and heat dried at 90 ° C. for 5 minutes and at 130 ° C. for 5 minutes. Thereafter, the same film as described above is further laminated as a protective film on the formed resin layer, and a first resin sheet having a structure of support film / first layer / protective film, and support film / second layer / A second resin sheet having a constitution of a protective film was obtained respectively.

  Next, the protective film was peeled from each of the resin sheets, and the first layer and the second layer were laminated by roll lamination at 60 ° C. to obtain a temporary fixing resin film.

  About the resin film for temporary fixing of an Example and a comparative example, the cross-sectional shape after level difference embedding, 200 degreeC heat resistance after hardening, storage elastic modulus, 30 degrees peeling strength of a 1st layer, and 90 of a 2nd layer As the evaluation of the peel strength, and the process compatibility, the step embedding property, the back grindability, the heat resistance at 200 ° C., and the peelability were evaluated according to the methods described below. The evaluation results are shown in Tables 5 and 6.

[Cross-sectional shape after step embedding]
The cross-sectional shape of the resin film for temporary fixation after step embedding was evaluated by the following method. The second layer side of the temporary fixing resin film was attached to the surface of a 650 μm silicon mirror wafer cut to 50 mm × 50 mm by roll lamination at 80 ° C. to obtain a wafer with the temporary fixing resin film.

  Next, a chip of 10 mm × 10 mm silicon wafer provided with connection terminals having the height and pitch shown in Table 3 or Table 4 was prepared. It was placed on the stage of a vacuum laminator (LM-50 X 50-S, manufactured by NPC Inc.) so that the surface on which the connection terminal of this silicon wafer with connection terminal is provided is the upper surface, and manufactured above The temporary fixing resin film surface of the wafer with the temporary fixing resin film was faced down, and the first layer of the temporary fixing resin film was disposed so as to stick to the connection terminal-containing silicon wafer side. This was heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under a condition of 15 mbar and vacuum laminated.

  The vacuum laminated sample was heated at 130 ° C. for 30 minutes and subsequently cured by heating at 170 ° C. for 2 hours. A cured sample was cast with an epoxy resin, and after curing the cast resin, the cross section was exposed by polishing, and the cross section of the temporarily fixed material was observed with a digital microscope (VHX-5000 manufactured by Aence Co., Ltd.). From the temporary fixing material cross section, the distance between the convex portion and the second layer (a in FIG. 8A) and the shortest distance between the main surface on which the concave portion of the semiconductor wafer is provided and the second layer (FIG. 8) B) in (A) was measured.

[200 ° C heat resistance]
The heat resistance at 200 ° C. of the temporary fixing resin film was evaluated by the following method. A 650 μm thick silicon mirror wafer (8 inches) was cut into 25 mm squares by blade dicing. It roll-laminated at 80 degreeC so that the 2nd layer side of the resin film for temporary fixing may stick on the small-ized silicon mirror wafer surface. Next, a slide glass with a thickness of 0.1 to 0.2 mm and a size of about 18 mm square is roll laminated on the first layer side of the temporary fixing resin film at 80 ° C., and the temporary fixing resin film is A laminate sample sandwiched between a silicon wafer and a slide glass was produced. The obtained sample was heated at 130 ° C. for 30 minutes, and then heated at 170 ° C. for 1 hour to cure the temporary fixing resin film, and then heated at 200 ° C. for 30 minutes. The sample obtained in this manner is observed from the slide glass surface, the image is analyzed by software such as Photoshop (registered trademark), and the ratio of voids to the entire area of the temporary fixing resin film is heat resistance at 200 ° C. Was evaluated. Evaluation criteria are as follows.
○: The percentage of voids is less than 5%.
X: The percentage of voids is 5% or more.

[Storage elastic modulus]
The storage elastic modulus after curing was evaluated for the first layer and the second layer in the temporary fixing resin film by the following method. The first layer or the second layer was laminated at 80 ° C. to a thickness of 150 to 300 μm. This was heated at 130 ° C. for 30 minutes and then at 170 ° C. for 2 hours to cure the temporary fixing resin film. The sample obtained in this manner was cut out to a width of 4 mm and a length of 33 mm in the thickness direction. The cut out single-layer film for measurement is set in a dynamic viscoelasticity device (product name: Rheogel-E4000, manufactured by UMB Co., Ltd.), applied a tensile load, and measured at a heating rate of 3 ° C./min at a frequency of 10 Hz. The storage modulus at 25 ° C. was measured.

[30 ° peel strength]
The 30 ° peel strength between the silicon wafer and the temporary fixing resin film (first layer) was evaluated by the following method. Grooves having a width of 40 μm and a depth of 40 μm were formed at intervals of 100 μm on a 650 μm thick silicon mirror wafer (6 inches) by blade dicing. The resin film for temporary fixing is placed on the stage of a vacuum laminator (LM-50 X 50-S, manufactured by NPC Inc.) so that the step of the silicon mirror wafer with a step thus produced is on the top surface. The first layer was placed so as to stick to the stepped silicon mirror wafer side, and was heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under a condition of 15 mbar for vacuum lamination. The resulting sample was heated at 130 ° C. for 30 minutes, followed by curing at 170 ° C. for 2 hours. This was further heated at 200 ° C. for 30 minutes, and then cut out to a width of 10 mm to obtain a film for measurement. The film for measurement was subjected to a peeling test at a speed of 300 mm / min with a peeling tester set such that the peeling angle was 30 °, and the peeling strength at that time was taken as 30 ° peeling strength.

[90 ° peel strength]
The 90 ° peel strength between the silicon mirror wafer and the temporary fixing resin film (second layer) was evaluated by the following method. A 650 μm thick silicon mirror wafer (8 inches) is placed on the stage of a vacuum laminator (LM-50 X 50-S, manufactured by NPC Inc.), and the temporary fixing resin film is a silicon mirror wafer as the second layer. It was set so as to stick to the side, heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under a condition of 15 mbar, and vacuum laminated. The resulting sample was heated at 130 ° C. for 30 minutes, followed by curing at 170 ° C. for 2 hours. This was further heated at 200 ° C. for 30 minutes, and then cut out to a width of 10 mm to obtain a film for measurement. The film for measurement was subjected to a peeling test at a speed of 300 mm / min with a peeling tester set such that the peeling angle was 90 °, and the peeling strength at that time was taken as 90 ° peeling strength.

<Evaluation of process suitability>
[Step embedding]
The step embedding property of the temporary fixing resin film was evaluated by the following method. The second layer side of the temporary fixing resin film was attached to the surface of a 650 μm silicon mirror wafer (8 inches) by roll lamination at 80 ° C. to obtain a wafer with the temporary fixing resin film.

  Next, a silicon wafer (8 inches) provided with connection terminals having the height and pitch shown in Table 3 or Table 4 was prepared. It was placed on the stage of a vacuum laminator (LM-50 X 50-S, manufactured by NPC Inc.) so that the surface on which the connection terminal of this silicon wafer with connection terminal is provided is the upper surface, and manufactured above The temporary fixing resin film surface of the wafer with the temporary fixing resin film was faced down, and the first layer of the temporary fixing resin film was disposed so as to stick to the connection terminal-containing silicon wafer side. This was heated and pressurized at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes under a condition of 15 mbar and vacuum laminated.

Thereafter, the state of the temporary fixing resin film was confirmed using an ultrasonic microscope (SAM, Insight-300, manufactured by Insight Co., Ltd.). Evaluation criteria for embeddability are as follows.
○: The percentage of voids is less than 5%.
X: The percentage of voids is 5% or more.

[Backgrind]
The sample after evaluation of the step embedding property was heated at 130 ° C. for 30 minutes and subsequently cured by heating at 170 ° C. for 2 hours. The cured sample was ground on the surface of the semiconductor wafer in the laminated sample using a full-automatic grinder polisher (DGP, Inc., DGP-8761). For the wheels, one axis: GF01-SDC320-BT300-50, two axes: IF-01-1-4 / 6-B · K09, and three axes: DPEG-GA0001 were used. The grinding was performed by the cross feed method, with the chuck table rotation number set to 300 rpm, the wheel rotation number set to 1 axis: 3,200 rpm, 2 axes: 3,400 rpm, and 3 axes: 1,400 rpm. The semiconductor wafer was ground to a thickness of 142 μm in one axis, and then ground to a thickness of 100 μm in three axes until the thickness was 102 μm in two axes. The sample in which the crack etc. did not generate | occur | produce at the finish time of grinding was evaluated as "(circle)", and the sample which crack etc generate | occur | produced was evaluated as "x".

[200 ° C heat resistance]
The sample after backgrind evaluation was heat-treated at 200 ° C. for 30 minutes. The state of the resin film for temporary fixing was confirmed using the sample obtained in this way using the ultrasonic microscope (SAM, the Insight Corporation make, Insight-300). Evaluation criteria for embeddability are as follows.
○: The percentage of voids is less than 5%.
X: The percentage of voids is 5% or more.

[Peelability]
The sample after the heat resistance evaluation at 200 ° C. was evaluated for peeling under the conditions of blade force 50 N, debonding force 200 N, and debonding speed 0.1 m / min using a debonder (DB12T manufactured by SUSS Co., Ltd.). The sample that could be peeled off without occurrence of cracking, chipping, etc. was evaluated as “サ ン プ ル”, and the sample that could not be cracked, chipped, etc., or could not be peeled was evaluated as “x”.

（比較例１及び３は、第二の層と接続端子とが接触）

(In Comparative Examples 1 and 3, the second layer is in contact with the connection terminal)

  As shown in Tables 5 and 6, when the thickness of the first layer is smaller than the height of the connection terminal, and when it is bonded to the silicon wafer with the connection terminal, between the second layer and the connection terminal According to the resin film for temporary fixing of the embodiment in which the first layer intervenes, the step (connection terminal) embedding property of the silicon wafer is excellent and sufficient back grinding property is obtained, and the releasability is It was confirmed to be good. Moreover, it was confirmed that the resin film for temporary fixing of an Example is excellent also in heat resistance.

1, 4 ... resin film sheet for temporary fixation, 2 ... first resin sheet, 3 ... second resin sheet, 10 ... support film, 20 ... resin film for temporary fixation, 21 ... first layer, 22 ... second Second layer, 30: protective film, 40: temporary fixing resin film, 41: first layer, 42: second layer, 50: support, 52: peeling layer, 60: semiconductor wafer, 62: connection terminal , 70: temporary fixing material, 71: hardened first layer, 72: hardened second layer, 80: semiconductor wafer, 82: penetrating electrode, 84: dicing line, 85: grinder, 86: penetrating electrode, 100 ... semiconductor element, 110 ... wiring board, 120 ... semiconductor device.

Claims (9)

A method of manufacturing a semiconductor device by processing a semiconductor wafer or element in which connection terminals are provided on one main surface,
Preparing a temporary fixing resin film comprising a first layer containing a thermoplastic resin, and a second layer containing a thermoplastic resin and a curable component provided on the first layer; ,
And a second step of bonding the temporary fixing resin film from the first layer side to the surface of the semiconductor wafer or element on which the connection terminal is provided,
The thickness X of the first layer in the resin film for temporary fixing prepared in the first step is smaller than the height T of the connection terminal, and is bonded to the semiconductor wafer or the element in the second step The manufacturing method of the semiconductor device whose said 1st layer intervenes between the said 2nd layer and the said connection terminal in the said resin film for temporary fixing.   The method for manufacturing a semiconductor device according to claim 1, wherein the thickness X is 0.3 T or more.   In the resin film for temporary fixation bonded to the semiconductor wafer or the element in the second step, the shortest distance between the main surface on which the connection terminal of the semiconductor wafer or the element is provided and the second layer is 0 The manufacturing method of the semiconductor device according to claim 1 or 2, which is not less than 1T and less than 1.0T. The first layer has a storage elastic modulus at 25 ° C. after curing of 0.01 to 1000 MPa,
The second layer has a storage modulus at 25 ° C. after curing of 1 to 10000 MPa.
The manufacturing method of the semiconductor device as described in any one of Claims 1-3. A first layer comprising a thermoplastic resin, and a second layer comprising a thermoplastic resin and a curable component provided on the first layer,
A temporary fixing resin film for temporarily fixing a semiconductor wafer or element having a connection terminal on one main surface.   The resin film for temporary fixing according to claim 5, wherein a thickness X of the first layer is smaller than a height T of the connection terminal.   The resin film for temporary fixing of Claim 6 whose said thickness X is 0.3 T or more. The first layer has a storage elastic modulus at 25 ° C. after curing of 0.01 to 1000 MPa,
The second layer has a storage modulus at 25 ° C. after curing of 1 to 10000 MPa.
The resin film for temporary fixing as described in any one of Claims 5-7.   The resin film sheet for temporary fixation provided with the support film which has releasability, and the resin film for temporary fixation as described in any one of Claims 5-8 provided on this support film.

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