JP6859729B2 - Manufacturing method of temporary fixing resin composition, temporary fixing resin film, temporary fixing resin film sheet and semiconductor device - Google Patents

Description

The present invention relates to a temporary fixing resin composition, a temporary fixing resin film, and a temporary fixing resin film sheet used when temporarily fixing a semiconductor chip sealed with a sealing material.

In recent years, there has been an increasing demand for smaller, lighter, and more sophisticated electronic devices. In response to these demands, semiconductor devices constituting electronic devices are also required to be miniaturized, thinned, and mounted at high density.

In the manufacture of such a semiconductor device, a semiconductor chip fixed to a substrate or a temporary fixing material is sealed with a sealing resin, and if necessary, the sealed material is a semiconductor device for each electronic component. The dicing procedure is adopted. In such a process, in order to meet the above requirements, a technique for grinding the sealed body after sealing with a sealing resin to reduce the thickness has been proposed (for example, Patent Document 1, Patent Document 2 and the like). reference). In the manufacture of thin semiconductor devices such as flip chip BGA (Ball Grid Array), flip chip SiP (System in Package), fan-in type wafer level package, and fan-out type wafer level package, in addition to thinning by grinding, The application of thin semiconductor chips is also an important factor.

Japanese Patent No. 3420748 Japanese Patent No. 3666576

In the manufacturing process of a thin and high-density semiconductor device such as a fan-out type wafer level package, first, a plurality of thin semiconductor chips are temporarily fixed on a temporary fixing material layer formed on a support, and then the said. A process has been proposed in which a semiconductor chip is embedded with an encapsulant, then rewiring is formed on the exposed semiconductor chip surface by grinding the encapsulant, and then the support with a temporary fixing material layer is peeled off from the semiconductor chip. There is.

The temporary fixing material used in the above process is required to have not only adhesiveness and heat resistance to high temperature processes, but also peelability that allows the processed semiconductor chip and encapsulant to be easily separated from the support. .. In particular, the encapsulant in which the semiconductor chip is embedded is often a resin component, and the temporary fixing material tends to be difficult to peel off from the encapsulant. Are required to be compatible with each other.

The present invention has been made in view of the above circumstances, and is a temporary fixing material layer capable of sufficiently fixing a semiconductor chip and its encapsulant to a support and easily peeling off from the processed semiconductor chip and encapsulant. It is an object of the present invention to provide a temporary fixing resin composition capable of forming, a temporary fixing resin film and a temporary fixing resin film sheet using the temporary fixing resin composition, and a method for manufacturing a semiconductor device. ..

The present invention provides a temporary fixing resin composition containing a thermoplastic resin and a silicone compound and used for temporarily fixing a semiconductor chip and a sealing body that seals the semiconductor chip.

According to the temporary fixing resin composition according to the present invention, the semiconductor chip and its encapsulant can be sufficiently fixed to the support, and a temporary fixing material layer that can be easily peeled off from the processed semiconductor chip and the encapsulant is formed. can do. Further, the temporary fixing material layer formed from the temporary fixing resin composition according to the present invention can be easily peeled off from the support. Further, the temporary fixing material layer formed from the temporary fixing resin composition according to the present invention can be peeled off from the semiconductor chip, the encapsulant, and the support without performing an operation such as immersing in a solvent. Can be done.

In the temporary fixing resin composition according to the present invention, the thermoplastic resin is preferably a (meth) acrylic copolymer having a reactive group. In this case, the heat resistance and the low-temperature stickability of the temporary fixing material layer and the temporary fixing resin film formed from the temporary fixing resin composition can be compatible with each other at a higher level.

In the temporary fixing resin composition according to the present invention, the silicone compound is preferably a silicone-modified alkyd resin. By using such a silicone compound, it is possible to achieve both the adhesiveness and the peelability of the temporary fixing material layer formed from the temporary fixing resin composition at a higher level.

The temporary fixing resin composition according to the present invention preferably further contains a curing accelerator. In this case, it becomes easy to achieve both curability and storage stability of the temporary fixing resin composition according to the present invention.

The temporary fixing resin composition according to the present invention preferably further contains a thermosetting resin. In this case, the heat resistance of the temporary fixing resin composition according to the present invention can be further improved.

The temporary fixing resin composition according to the present invention preferably further contains a photothermal conversion material. In this case, since the adhesiveness of the temporary fixing resin composition can be lowered by irradiation with radiant energy, the temporary fixing material layer can be peeled off from the semiconductor chip and the encapsulant with even lower stress.

In the temporary fixing material resin composition according to the present invention, the photothermal conversion material is preferably carbon black. In this case, the temporary fixing material layer formed from the temporary fixing resin composition can be more excellent in peelability from the support.

The present invention also provides a temporary fixing resin film obtained by forming the temporary fixing resin composition according to the present invention into a film.

By the way, in order to impart excellent heat resistance to the temporary fixing material, it is conceivable to use a general resin having excellent heat resistance such as polyimide having a high glass transition temperature (Tg). However, when the temporary fixing material is made into a film to facilitate flatness during processing, the glass transition temperature of the resin is high, so in order to sufficiently fix the semiconductor chip and the support, bonding is performed at a high temperature. This must be done and can damage the semiconductor chip. Therefore, the film-shaped temporary fixing material is required to have low-temperature adhesiveness capable of sufficiently fixing the semiconductor chip and the support even when the film-shaped temporary fixing material is bonded at a low temperature. On the other hand, according to the temporary fixing resin film according to the present invention, both heat resistance and low-temperature stickability can be achieved at a high level. By using such a temporary fixing resin film, a semiconductor chip can be efficiently processed. As a result, a semiconductor element suitable for a SIP type package can be efficiently manufactured, and further, a semiconductor device including the semiconductor element can be efficiently manufactured.

The present invention also provides a temporary fixing resin film sheet including a support film having releasability and a temporary fixing resin film according to the present invention provided on the support film. According to the temporary fixing resin film sheet according to the present invention, the temporary fixing resin film according to the present invention can be easily transferred to the support, and the semiconductor chip can be efficiently processed.

The present invention also has a first step of providing a temporary fixing material layer formed from the temporary fixing resin composition according to the present invention on a support, and a second step of arranging a semiconductor chip on the temporary fixing material layer. In the third step of forming a semiconductor chip encapsulant having the semiconductor chip and the encapsulant by providing an encapsulant covering the semiconductor chip, and so that the surface opposite to the support of the semiconductor chip is exposed. , The fourth step of grinding the semiconductor chip encapsulation, the fifth step of forming wiring on the exposed surface of the semiconductor chip, and the temporary fixing material layer from the semiconductor chip encapsulation that has undergone the fourth and fifth steps. Provided is a method for manufacturing a semiconductor device including a sixth step of peeling.

According to the manufacturing method according to the present invention, by providing the temporary fixing material layer formed from the temporary fixing resin composition according to the present invention, the semiconductor chip and its sealing body are sufficiently fixed to the support and ground. Processing such as wiring formation can be performed satisfactorily, and after processing, the temporary fixing material layer can be easily peeled off from the semiconductor chip and the encapsulant without performing an operation such as immersing the temporary fixing material layer in a solvent or the like. It is possible to efficiently manufacture a semiconductor device. Further, in the manufacturing method according to the present invention, the temporary fixing material layer can be easily peeled off from the processed semiconductor chip encapsulant, so that the stress on the semiconductor chip can be further reduced.

In the first step of the manufacturing method according to the present invention, the temporary fixing material layer may be formed by attaching the temporary fixing resin film according to the present invention onto a support.

In the manufacturing method according to the present invention, the support may be a light-transmitting support. Further, in the sixth step, after irradiating the temporary fixing material layer with radiant energy from the light transmissive support side, the temporary fixing material layer may be peeled off from the semiconductor chip encapsulant (semiconductor chip and encapsulant). .. For example, when the temporary fixing material layer contains a photothermal conversion material or the like, the adhesiveness of the temporary fixing material layer can be lowered by irradiation with radiant energy. As a result, the temporary fixing material layer can be easily peeled off from the support, and then the temporary fixing material layer can be easily peeled off from the semiconductor chip and the sealing body, so that the stress on the conductor chip and the sealing body can be further reduced. Becomes possible. Further, the radiant energy may include light having a wavelength of 1064 nm generated by the YAG laser.

According to the present invention, a temporary fixing resin capable of sufficiently fixing a semiconductor chip and its encapsulant to a support and forming a temporary fixing material layer that can be easily peeled off from the processed semiconductor chip and the encapsulant. It is possible to provide a composition, a temporary fixing resin film and a temporary fixing resin film sheet using the temporary fixing resin composition, and a method for manufacturing a semiconductor device.

FIG. 1 (a) is a top view showing an embodiment of a resin film sheet for temporary fixing according to the present invention, and FIG. 1 (b) is a schematic cross section taken along line I-I of FIG. 1 (a). It is a figure. FIG. 2A is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention, and FIG. 2B is a schematic view taken along line II-II of FIG. 2A. It is a cross-sectional view. FIG. 3 is a schematic cross-sectional view showing an embodiment of a method for processing a semiconductor chip. FIG. 4 is a schematic cross-sectional view showing an embodiment of a method for processing a semiconductor chip. FIG. 5 is a schematic cross-sectional view showing an embodiment of a separation step of separating a processed semiconductor chip from a support. FIG. 6A is a schematic cross-sectional view showing an embodiment of a separation step of separating a film-shaped temporary fixing material layer from a processed semiconductor chip. 6 (b) and 6 (c) are schematic cross-sectional views for explaining an embodiment of a method for processing a semiconductor chip.

Hereinafter, a preferred embodiment of the present invention (hereinafter, may be referred to as “the present embodiment”) will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and duplicate description will be omitted. Moreover, the dimensional ratio of the drawing is not limited to the ratio shown in the drawing.

[Resin composition for temporary fixing]
The temporary fixing resin composition according to the present embodiment contains a thermoplastic resin and a silicone compound, and is used for temporarily fixing a semiconductor chip and a sealant that seals the semiconductor chip.

As the thermoplastic resin used in the present embodiment, a resin having thermoplasticity or a resin having at least thermoplasticity in an uncured state and forming a crosslinked structure after heating can be used. As the thermoplastic resin, one type can be used alone or two or more types can be used in combination.

The thermoplastic resin has a (meth) acrylic copolymer having a reactive group from the viewpoint of excellent heat resistance and low-temperature adhesiveness of the temporary fixing material layer and the temporary fixing resin film formed from the temporary fixing resin composition. A coalescence (hereinafter, may be referred to as a "reactive group-containing (meth) acrylic copolymer") is preferable. In addition, in this specification, (meth) acrylic is used in the meaning of either acrylic or methacrylic.

Examples of the (meth) acrylic copolymer include (meth) acrylic acid ester copolymers such as acrylic glass and acrylic rubber. Among these, acrylic rubber is preferable. The acrylic rubber is preferably formed by copolymerizing an acrylic acid ester as a main component and a monomer selected from (meth) acrylic acid ester and acrylonitrile. Examples of the (meth) acrylic acid ester include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate and propyl. Examples thereof include methacrylate, isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, and lauryl methacrylate. Examples of the copolymer based on a specific combination of monomers include a copolymer containing butyl acrylate and acrylonitrile as a copolymerization component, and a copolymer containing ethyl acrylate and acrylonitrile as a copolymerization component.

The reactive group-containing (meth) acrylic copolymer is preferably a reactive group-containing (meth) acrylic copolymer containing a (meth) acrylic monomer having a reactive group as a copolymerization component. Such a reactive group-containing (meth) acrylic copolymer can be obtained by copolymerizing a (meth) acrylic monomer having a reactive group and a monomer composition containing the above-mentioned monomer. ..

As the reactive group, an epoxy group, a carboxyl group, an acryloyl group, a methacryloyl group, a hydroxyl group and an episulfide group are preferable from the viewpoint of improving heat resistance, and an epoxy group and a carboxyl group are more preferable from the viewpoint of crosslinkability.

In the present embodiment, the reactive group-containing (meth) acrylic copolymer is preferably an epoxy group-containing (meth) acrylic copolymer containing a (meth) acrylic monomer having an epoxy group as a copolymerization component. In this case, examples of the (meth) acrylic monomer having an epoxy group include glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl acrylate, glycidyl methacrylate, 4-hydroxybutyl methacrylate glycidyl ether and 3, 4-Epoxide cyclohexylmethyl methacrylate can be mentioned. Among the (meth) acrylic monomers having a reactive group, glycidyl acrylate and glycidyl methacrylate are preferable from the viewpoint of heat resistance.

The Tg of the thermoplastic resin is preferably −50 ° C. to 50 ° C. When the Tg of the thermoplastic resin is 50 ° C. or lower, when a film-shaped temporary fixing material is formed from the temporary fixing resin composition, flexibility can be easily ensured and low-temperature stickability can be improved. Further, when the semiconductor chip has irregularities, bump embedding at 150 ° C. or lower becomes easier. On the other hand, when the Tg of the thermoplastic resin is −50 ° C. or higher, when a film-shaped temporary fixing material is formed from the temporary fixing resin composition, the flexibility becomes too high, resulting in a decrease in handleability and peelability. Can be suppressed.

The Tg of the thermoplastic resin is an intermediate point glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the thermoplastic resin is an intermediate calculated by a method based on JIS K 7121: 1987 by measuring the change in calorific value under the conditions of a heating rate of 10 ° C./min and a measurement temperature of -80 to 80 ° C. The point glass transition temperature.

The weight average molecular weight of the thermoplastic resin is preferably 100,000 or more and 2 million or less. When the weight average molecular weight is 100,000 or more, it becomes easy to secure the heat resistance of the temporary fixing resin composition. On the other hand, when the weight average molecular weight is 2 million or less, when a film-shaped temporary fixing material is formed from the temporary fixing resin composition, it is easy to suppress a decrease in flow and a decrease in stickability. The weight average molecular weight is a polystyrene-equivalent value using a calibration curve made of standard polystyrene by gel permeation chromatography (GPC).

When the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate and / or glycidyl methacrylate as a copolymerization component, the total amount thereof is 0.1% by mass or more based on the total amount of the copolymerization component. It may be 0.5% by mass or more, 1.0% by mass or more, 2.0% by mass or more, or 3.0% by mass or more. Good. The blending amount may be 40% by mass or less, 35% by mass or less, 30% by mass or less, 20% by mass or less, and 15% by mass or less. It may be 10% by mass or less. The blending amount is, for example, preferably 0.1 to 20% by mass, more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass. When the blending amount is within the above range, both heat resistance and flexibility can be achieved at a higher level when a film-shaped temporary fixing material is formed from the temporary fixing resin composition. From the same viewpoint, the blending amount is preferably 1.0 to 40% by mass, more preferably 2.0 to 35% by mass, and further preferably 3.0 to 30% by mass. ..

When the temporary fixing resin composition according to the present embodiment further contains a photothermal conversion material described later, the glycidyl acrylate and / or glycidyl methacrylate contained as a copolymerization component in the (meth) acrylic copolymer having a reactive group. The total amount to be blended is preferably 1.0 to 40% by mass, more preferably 2.0 to 35% by mass, and 3.0 to 30% by mass based on the total amount of the copolymerization components. It is more preferable to have. When the blending amount is within the above range, both heat resistance and flexibility can be achieved at a higher level when a film-shaped temporary fixing material is formed from the temporary fixing resin composition.

As the (meth) acrylic copolymer having a reactive group as described above, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or HTR-860P-3CSP (Nagase Chemtex Co., Ltd.) Commercially available products such as those manufactured by the company (trade name) may be used.

The content of the thermoplastic resin in the temporary fixing resin composition of the present embodiment is preferably 30 to 99% by mass, more preferably 50 to 95% by mass, based on the total amount of the temporary fixing resin composition.

The silicone compound used in the present embodiment is not particularly limited as long as it has a polysiloxane structure. For example, silicone-modified resin, straight silicone oil, non-reactive modified silicone oil, reactive modified silicone oil and the like can be mentioned. The silicone compound may be used alone or in combination of two or more.

When the temporary fixing resin composition contains a silicone compound, the film-shaped temporary fixing material formed from the temporary fixing resin composition is peeled from the semiconductor chip, the sealant, and the support at 100 ° C. or lower. Even at low temperatures, it can be easily peeled off without using a solvent.

When the silicone compound used in the present embodiment is a silicone-modified resin, a silicone-modified alkyd resin is preferable.

As a method for obtaining a silicone-modified alkyd resin, for example, (i) when a normal synthetic reaction for obtaining an alkyd resin, that is, a reaction between a polyvalent acol and a fatty acid, a polybasic acid, etc., an organopolysiloxane is simultaneously used as an alcohol component. Examples thereof include a method of reacting and (ii) a method of reacting an organopolysiloxane with a general alkyd resin synthesized in advance.

Examples of the polyhydric alcohol used as a raw material for the alkyd resin include dihydric alcohols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, trimethylene glycol, tetramethylene glycol, and neopentyl glycol, glycerin, and trimethylolethane. Examples thereof include trihydric alcohols such as trimethylolpropane, and tetrahydric or higher polyhydric alcohols such as diglycerin, triglycerin, pentaerythritol, dipentaerythritol, mannit, and sorbit. One of these may be used alone, or two or more thereof may be used in combination.

Examples of the polybasic acid used as a raw material for the alkyd resin include aromatic polybasic acids such as maleic anhydride, terephthalic acid, isophthalic acid and trimetic anhydride, and aliphatic saturated polys such as succinic acid, adipic acid and sebacic acid. Aliper unsaturated polybasic acids such as basic acid, maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride, cyclopentadiene-maleic anhydride adduct, terpen-maleic anhydride adduct, rosin-maleic anhydride Examples thereof include polybasic acid produced by a deal-alder reaction such as an acid adduct. One of these may be used alone, or two or more thereof may be used in combination.

As the silicone-modified alkyd resin, for example, commercially available products such as Tessfine 319 and TA31-209E (all manufactured by Hitachi Chemical Polymer Co., Ltd., trade name) can be used.

The alkyd resin may further contain a denaturing agent or a cross-linking agent.

Modifiers include, for example, octyl acid, lauric acid, palmitic acid, stearic acid, oleic acid, linoleic acid, linoleic acid, eleostearic acid, ricinoleic acid, dehydrated ricinoleic acid, or coconut oil, flaxseed oil, millet oil, castor oil. , Dehydrated castor oil, soybean oil, safflower oil, fatty acids thereof and the like can be used. One of these may be used alone, or two or more thereof may be used in combination.

When the temporary fixing resin composition according to the present embodiment contains a silicone-modified alkyd resin, it is preferable to further contain a cross-linking agent capable of thermally cross-linking the silicone-modified alkyd resin, or a cross-linking agent and a catalyst. Examples of such a cross-linking agent include amino resins such as melamine resin and urea resin. In this case, the heat resistance and peelability of the film-shaped temporary fixing material formed from the temporary fixing resin composition can be further improved.

Examples of the cross-linking agent include amino resins such as melamine resin and urea resin, urethane resins, epoxy resins and phenol resins. Among these, when an amino resin is used, an aminoalkyd resin crosslinked with the amino resin can be obtained, which is preferable. One type of cross-linking agent may be used alone, or two or more types may be used in combination.

In the silicone-modified alkyd resin, an acidic catalyst can be used as the curing catalyst. The acidic catalyst can be used without particular limitation, and can be appropriately selected from known acidic catalysts as the cross-linking reaction catalyst of the alkyd resin. As such an acidic catalyst, an organic acidic catalyst such as p-toluenesulfonic acid or methanesulfonic acid is suitable. One type of acidic catalyst may be used alone, or two or more types may be used in combination. The amount of the acidic catalyst compounded is usually 0.1 to 40 parts by mass, preferably 0.5 to 30 parts by mass, and more preferably 1 to 20 parts by mass with respect to 100 parts by mass of the total of the alkyd resin and the cross-linking agent. It is selected within the range of.

The surface free energy of the silicone-modified alkyd resin is preferably 15 to 30 mN / m. When the surface free energy of the silicone-modified alkyd resin is in such a range, the heat resistance and the peelability of the temporary fixing material layer formed from the temporary fixing resin composition can be compatible with each other at a higher level. Further, from the viewpoint of heat resistance, the temporary fixing resin composition preferably contains a silicone-modified alkyd resin having a surface free energy of 15 to 27 mN / m, and a silicone-modified alkyd resin having a surface free energy of 15 to 24 mN / m. It is more preferable to include it. The surface free energy is a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.) for a film having a thickness of 0.3 μm obtained by applying a silicone-modified alkyd resin on a PET film and drying it at 150 ° C. for 30 seconds. The contact angles of water, ethylene glycol, and methyl iodide can be measured using CA-X type) and calculated by surface free energy analysis software (EG-2 manufactured by Kyowa Interface Science Co., Ltd.).

From the viewpoint of the balance between solubility and adhesiveness, the blending amount of the silicone compound in the temporary fixing resin composition according to the present embodiment is 1.0 to 100 parts by mass in total with respect to 100 parts by mass of the thermoplastic resin. Preferably, 3.0 to 80 parts by mass is more preferable. From the same viewpoint, the blending amount of the silicone compound may be 3.0 to 50 parts by mass or 5.0 to 40 parts by mass. When the blending amount of the silicone compound is within the above range, the peelability of the temporary fixing material from the semiconductor chip and the encapsulant is further improved.

The temporary fixing resin composition according to the present embodiment preferably further contains a photothermal conversion material.

As the photothermal conversion material, a substance that absorbs radiant energy and generates heat, which will be described later, can be used. Examples of the photothermal conversion material include carbon black; carbon fiber; gliffite powder; fine particle metal powder such as iron, aluminum, copper and nickel; and metal oxide powder such as black titanium oxide. As the photothermal conversion material, one type can be used alone or two or more types can be used in combination.

When the temporary fixing resin composition contains a photothermal conversion material, the peelability can be facilitated by irradiation with radiant energy. For example, by irradiating the temporary fixing material containing the photothermal conversion material with radiant energy, the constituent components of the temporary fixing material can be thermally decomposed by the heat energy generated from the photoheat conversion material to generate voids. As a result, the adhesiveness of the temporary fixing material can be lowered, and the separability can be further improved. Carbon black is preferable because the above-mentioned action can be efficiently obtained.

The blending amount of the photothermal conversion material in the temporary fixing resin composition according to the present embodiment varies depending on the type of the photothermal conversion material, the particle form, the degree of dispersion, etc., but the blending amount of the photothermal conversion material is for temporary fixing. It is preferably 0.5 to 50 parts by mass, more preferably 0.8 to 40 parts by mass, and further preferably 1.0 to 30 parts by mass with respect to 100 parts by mass of the total amount of the resin composition. When the blending amount of the photothermal conversion material is 0.5 parts by mass or more, sufficient heat is sufficient to thermally decompose the constituent components when the temporary fixing material formed from the temporary fixing resin composition is irradiated with radiant energy. Easy to get energy. When the blending amount of the photothermal conversion material is 50 parts by mass or less, the film-forming property of the resin composition for temporary fixing can be maintained, so that poor attachment to a support or the like is unlikely to occur. This effect is remarkable when a general carbon black having a particle size of about 5 to 500 nm is used as the photothermal conversion material. For the particle size of the photothermal conversion material, a method of heating the temporary fixing resin composition in an oven at 600 ° C. for 2 hours to decompose and volatilize the resin component, and observing the residue by SEM, a laser diffraction / scattering type particle size distribution measuring device. It can be derived by a method of measurement using the method or the like.

The temporary fixing resin composition according to the present embodiment contains, if necessary, a curing accelerator, a thermosetting resin, an organic solvent, and other components in addition to the thermoplastic resin, the silicone compound, and the photothermal conversion material. Can be done.

Examples of the curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5, 4,0] Undecene-7-tetraphenylborate and the like can be mentioned. These can be used individually by 1 type or in combination of 2 or more types.

When the temporary fixing resin composition according to the present embodiment contains a (meth) acrylic copolymer having an epoxy group, it contains a curing accelerator that promotes curing of the epoxy group contained in the acrylic copolymer. Is preferable. Examples of the curing accelerator that promotes the curing of the epoxy group include a phenol-based curing agent, an acid anhydride-based curing agent, an amine-based curing agent, an imidazole-based curing agent, an imidazoline-based curing agent, a triazine-based curing agent, and a phosphine-based curing agent. Agents can be mentioned. Among these, from the viewpoint of quick curing, heat resistance and peelability, an imidazole-based curing agent that can be expected to shorten the process time and improve workability is preferable. These compounds may be used alone or in combination of two or more.

The amount of the curing accelerator to be blended in the temporary fixing resin composition according to the present embodiment is preferably 0.01 to 50 parts by mass, more preferably 0.05 to 20 parts by mass with respect to 100 parts by mass of the thermoplastic resin. When the blending amount of the curing accelerator is within the above range, there is a tendency that the decrease in storage stability can be sufficiently suppressed while improving the curability of the temporary fixing resin composition according to the present embodiment.

As the thermosetting resin, any resin that can be cured by heat can be used without particular limitation.

Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, urea resin and the like. These can be used individually by 1 type or in combination of 2 or more types. In particular, as the thermosetting resin, it is preferable to use an epoxy resin from the viewpoint of obtaining a temporary fixing resin composition having excellent heat resistance, workability, and reliability. When an epoxy resin is used as the thermosetting resin, it is preferable to use an epoxy resin curing agent together.

The epoxy resin is not particularly limited as long as it is cured and has a heat resistant effect. As the epoxy resin, a bifunctional epoxy resin such as bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin, and a cresol novolac type epoxy resin can be used. As the epoxy resin, generally known ones such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic epoxy resin, and an alicyclic epoxy resin can be applied.

Bisphenol A type epoxy resins include Epicoat series manufactured by Japan Epoxy Resin Co., Ltd. (Product names: Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009), trade names manufactured by Dow Chemical Co., Ltd .: DER-330, DER-301, DER-361, trade names manufactured by Toto Kasei Co., Ltd .: YD8125, YDF8170 and the like. As the phenol novolac type epoxy resin, the product name of Japan Epoxy Resin Co., Ltd .: Epicoat 152, Epicoat 154, the product name of Nippon Kayaku Co., Ltd .: EPPN-201, and the product name of Dow Chemical Co., Ltd .: DEN- 438 and the like can be mentioned. As the o-cresol novolac type epoxy resin, trade names manufactured by Nippon Kayaku Co., Ltd .: EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027, Toto Kasei Co., Ltd. Product names: YDCN701, YDCN702, YDCN703, YDCN704 and the like. As the polyfunctional epoxy resin, the product name of Japan Epoxy Resin Co., Ltd .: Epon 1031S, the product name of Ciba Speciality Chemicals Co., Ltd .: Araldite 0163, the product name of Nagase ChemteX Co., Ltd .: Denacol EX-611, Examples thereof include EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411, and EX-321. As the amine type epoxy resin, the product name of Japan Epoxy Resin Co., Ltd .: Epicoat 604, the product name of Toto Kasei Co., Ltd .: YH-434, the product name of Mitsubishi Gas Chemical Co., Ltd .: TETRAD-X and Examples thereof include TETRAD-C, a trade name manufactured by Sumitomo Chemical Co., Ltd .: ELM-120, and the like. Examples of the heterocyclic-containing epoxy resin include trade names manufactured by Chivas Specialty Chemicals Co., Ltd .: Araldite PT810 and trade names manufactured by UCC Co., Ltd .: ERL4234, ERL4299, ERL4221, ERL4206 and the like. These epoxy resins may be used alone or in combination of two or more.

As the epoxy resin curing agent, a commonly used and known curing agent can be used, and for example, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S. Examples thereof include bisphenols having two or more phenolic hydroxyl groups in one molecule, phenol novolac resins, bisphenol A novolak resins, phenolic resins such as cresol novolac resin, and the like. As the epoxy resin curing agent, phenolic resins such as phenol novolac resin, bisphenol A novolak resin, and cresol novolak resin are particularly preferable from the viewpoint of excellent electrolytic corrosion resistance during moisture absorption.

Among the above phenol resin curing agents, for example, those manufactured by Dainippon Ink and Chemicals Co., Ltd., trade names: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenolite VH4170, manufactured by Meiwa Kasei Co., Ltd., trade name: H-1, manufactured by Japan Epoxy Resin Co., Ltd., trade name: Epicure MP402FPY, Epicure YL6065, manufactured by Epicure YLH129B65 and Mitsui Chemicals Co., Ltd. Name: Millex XL, Millex XLC, Millex RN, Millex RS, Millex VR and the like.

The blending amount of the thermosetting component in the temporary fixing resin composition according to the present embodiment is preferably 10 to 300 parts by mass, more preferably 30 to 100 parts by mass with respect to 100 parts by mass of the thermoplastic resin. When the blending amount of the thermosetting component is within the above range, the temporary fixing resin composition according to the present embodiment can easily achieve both sufficient low-temperature stickability and heat resistance.

An inorganic filler can be further added to the temporary fixing resin composition according to the present embodiment. Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metal inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramics. The inorganic filler can be selected according to the desired function. For example, the metal filler can be added for the purpose of imparting thixotropy to the temporary fixing resin composition, and the non-metal inorganic filler has the purpose of imparting low thermal expansion and low hygroscopicity to the temporary fixing resin composition. Can be added with. The inorganic filler may be used alone or in combination of two or more.

The inorganic filler preferably has an organic group on its surface. Since the surface of the inorganic filler is modified with an organic group, the dispersibility in an organic solvent when preparing the temporary fixing resin composition and the film-like temporary fixing material formed from the temporary fixing resin composition It becomes easy to improve the adhesion and heat resistance of the plastic.

The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and the inorganic filler and stirring at a temperature of 30 ° C. or higher. .. It can be confirmed by UV measurement, IR measurement, XPS measurement, etc. that the surface of the inorganic filler is modified by the organic group.

In the formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group and a methacryloyl group. Indicates an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently indicate an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an isopropyl group and an isobutyl group. Can be mentioned. The alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group and a pentyl group from the viewpoint of easy availability. From the viewpoint of heat resistance, X is preferably an amino group, a glycidoxy group, a mercapto group and an isocyanate group, and more preferably a glycidoxy group and a mercapto group. The s in the formula (B-1) is preferably 0 to 5, more preferably 0 to 4, from the viewpoint of suppressing the film fluidity at the time of high heat and improving the heat resistance.

Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N. -(2-Aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3 -Glysidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanaxpropyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane , 3-Mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propaneamine, N, N'-bis (3) -(Trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, polyethoxydimethylsiloxane and the like can be mentioned. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanuppropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane and 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferred. The silane coupling agent may be used alone or in combination of two or more.

The amount of the coupling agent used is preferably 0.01 to 50 parts by mass, preferably 0.05 parts by mass, based on 100 parts by mass of the inorganic filler, from the viewpoint of balancing the effect of improving heat resistance and storage stability. Parts to 20 parts by mass are more preferable, and 0.5 to 10 parts by mass is further preferable from the viewpoint of improving heat resistance.

The blending amount of the inorganic filler in the temporary fixing resin composition according to the present embodiment is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, still more preferably 100 parts by mass or less, based on 100 parts by mass of the thermoplastic resin. .. The lower limit of the blending amount of the inorganic filler is not particularly limited, but is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin. By setting the blending amount of the inorganic filler within the above range, it becomes easy to impart a desired function while sufficiently ensuring the adhesiveness of the film-shaped temporary fixing material formed from the temporary fixing resin composition.

An organic filler can be further added to the temporary fixing resin composition according to the present embodiment. Examples of the organic filler include rubber-based fillers, silicone-based fine particles, polyamide fine particles, polyimide fine particles, and the like. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and even more preferably 100 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin. The lower limit of the blending amount of the inorganic filler is not particularly limited, but is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin.

The temporary fixing resin composition according to the present embodiment may be further diluted with an organic solvent, if necessary. The organic solvent is not particularly limited, and can be determined from the boiling point in consideration of volatility during film formation and the like. Specifically, for example, a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene is used at the time of film formation. It is preferable from the viewpoint that the curing of the film does not proceed easily. Further, for the purpose of improving the film-forming property, for example, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone and cyclohexanone. These solvents may be used alone or in combination of two or more.

The solid content concentration of the temporary fixing resin composition according to the present embodiment is preferably 10 to 80% by mass.

The temporary fixing resin composition according to the present embodiment contains a thermoplastic resin, a silicone compound, and, if necessary, a photothermal converter, a curing accelerator, a thermosetting resin, an organic solvent, and other components. It can be prepared by kneading. Mixing and kneading can be carried out by appropriately combining a normal stirrer, a raker, a triple roll, a disperser such as a bead mill, and the like.

[Resin film for temporary fixing]
The temporary fixing resin film according to the present embodiment is formed by forming the temporary fixing resin composition according to the present embodiment in the form of a film.

The temporary fixing resin film according to the present embodiment can be easily manufactured, for example, by applying the temporary fixing resin composition to the support film. When the temporary fixing resin composition is diluted with an organic solvent, it can be produced by applying the resin composition to a support film and removing the organic solvent by heating and drying.

A protective film can be attached to the temporary fixing resin film provided on the support film, if necessary. In this case, a temporary fixing resin film sheet having a three-layer structure including a support film, a temporary fixing resin film, and a protective film, which will be described later, can be obtained.

The temporary fixing resin film sheet thus obtained can be easily stored, for example, by winding it into a roll. It is also possible to cut a roll-shaped film into a suitable size and store it in a sheet form.

FIG. 1 (a) is a top view showing one embodiment of the temporary fixing resin film sheet of the present embodiment, and FIG. 1 (b) is a schematic cross-sectional view taken along the line I-I of FIG. 1 (a). Is.

The temporary fixing resin film sheet 100 shown in FIG. 1 includes a support film 10 having releasability, a temporary fixing resin film 20 provided on the support film 10, and a support film 10 of the temporary fixing resin film 20. Is provided with a protective film 30 provided on the opposite side. The temporary fixing resin film 20 is formed by forming the temporary fixing resin composition according to the present embodiment into a film.

The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. From the viewpoint of flexibility and toughness, the support film is preferably polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, polyimide or the like. Further, from the viewpoint of improving the peelability from the temporary fixing resin film (resin layer), it is preferable to use a film that has been subjected to a mold release treatment with a silicone-based compound, a fluorine-based compound, or the like as the support film.

The thickness of the support film 10 may be appropriately changed depending on the desired flexibility, but is preferably 3 to 250 μm. When the thickness is 3 μm or more, the film strength is sufficient, and when the thickness is 250 μm or less, sufficient flexibility tends to be obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 to 200 μm, and particularly preferably 7 to 150 μm.

The thickness of the temporary fixing resin film 20 of the present embodiment is not particularly limited, but the thickness after drying is preferably 5 to 300 μm. If the thickness is 5 μm or more, it becomes easy to secure sufficient strength of the film or the cured product of the film, and if it is 300 μm or less, it becomes easy to reduce the amount of residual solvent in the film by sufficient drying, and the film. It is possible to further reduce foaming when the cured product of No. 1 is heated.

When producing a thick film, a preformed film having a thickness of 100 μm or less may be bonded. By using the film bonded in this way, it is possible to reduce the residual solvent when the thickened film is produced.

The protective film 30 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, and polypropylene. From the viewpoint of flexibility and toughness, the protective film is preferably polyethylene terephthalate, polyethylene, polypropylene or the like. Further, from the viewpoint of improving the peelability from the temporary fixing resin film (resin layer), it is preferable to use a film that has been subjected to a mold release treatment with a silicone-based compound, a fluorine-based compound, or the like as a protective film.

The thickness of the protective film 30 can be appropriately set depending on the desired flexibility. The thickness of the protective film 30 is preferably 10 to 250 μm. When the thickness is 10 μm or more, the film strength is sufficient, and when the thickness is 250 μm or less, sufficient flexibility tends to be obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 to 200 μm, and particularly preferably 20 to 150 μm.

FIG. 2A is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention, and FIG. 2B is a schematic cross section taken along line II-II of FIG. 2A. It is a figure.

The temporary fixing resin film sheet 200 shown in FIG. 2 is different from the temporary fixing resin film sheet 100 except that the temporary fixing resin film 20 and the protective film 30 are cut in advance according to the shape of the temporary fixing member. It has a similar configuration. In FIG. 2, the outer edges of the cut temporary fixing resin film 20 and the protective film 30 are removed, but the temporary fixing resin film and the protective film are provided with cuts according to the shape of the temporary fixing member. And the outer edge may be left behind.

[Semiconductor device manufacturing method]
The method for manufacturing a semiconductor device according to this embodiment is roughly divided into the following six steps.
The method of the present embodiment includes a first step of providing a temporary fixing material layer formed from the temporary fixing resin composition on a support, and a second step of arranging a semiconductor chip on the temporary fixing material layer. A semiconductor is provided so as to provide an encapsulant covering the semiconductor chip and to form a semiconductor chip encapsulant having the semiconductor chip and the encapsulant so that the surface opposite to the support of the semiconductor chip is exposed. The temporary fixing material is peeled off from the fourth step of grinding the chip encapsulation, the fifth step of forming wiring on the exposed surface of the semiconductor chip, and the semiconductor chip encapsulation that has undergone the fourth and fifth steps. The sixth step is provided.

3, FIG. 4, FIG. 5, and FIG. 6 are schematic cross-sectional views for explaining an embodiment of a method for manufacturing a semiconductor device. The method of the present embodiment will be described with reference to these figures.

<First process>
3A and 3B show a step of providing the support 1 with a film-shaped temporary fixing material layer 21 formed of the temporary fixing resin composition or the temporary fixing resin film according to the present embodiment. Shown.

When the temporary fixing resin composition is used, the temporary fixing material layer 21 can be formed on the support by a method such as spin coating. When the resin composition for temporary fixing is diluted with an organic solvent, after spin coating, the organic solvent is removed by heat drying by heat drying according to the volatilization conditions of the solvent to form the temporary fixing material layer 21. Can be done.

When a prefabricated temporary fixing resin film is used, the temporary fixing resin film is laminated on the support under predetermined conditions (for example, at room temperature (20 ° C.) or in a heated state) using a roll laminator, a vacuum laminator, or the like. As a result, the temporary fixing material layer 21 can be provided.

The material of the support 1 of the present embodiment is not particularly selected, but a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used. When the peeling method of irradiating radiant energy is performed, the material of the support 1 is not particularly selected as long as it is light transmissive, but a light transmissive support such as a glass wafer or a quartz wafer can be used.

The support 1 of the present embodiment may be peeled off. A peeling layer can be formed by peeling all or part of the surface of the support 1. The release agent used for the release treatment is not particularly limited. As the release agent, for example, a surface modifier having a fluorine element, a polyolefin wax and a silicone oil, a silicone oil containing a reactive group, and a silicone-modified alkyd resin are preferable because they have excellent peelability.

<Second process>
Next, a plurality of semiconductor chips 3 are arranged on the support 1 on which the temporary fixing material layer 21 is formed. A plurality of semiconductor chips 3 can be individually pressure-bonded and arranged on the temporary fixing material layer 21 under predetermined conditions (for example, at room temperature (20 ° C.) or in a heated state).

For example, a flip chip bonder can be used for crimping the semiconductor chip 3. For example, using a flip chip bonder manufactured by Shinkawa Co., Ltd., it is supported via the temporary fixing material layer 21 at a crimping pressure of 0.01 MPa to 1 MPa, a crimping temperature of 20 ° C. to 120 ° C., and a holding time of 0.1 seconds to 60 seconds. The semiconductor chip 3 can be arranged on the body 1.

Even if the semiconductor chip 3 is placed on the support 1 via the temporary fixing material layer 21, and then the temporary fixing material layer 21 is heat-cured under predetermined conditions (100 to 200 ° C. for 5 to 180 minutes), if necessary. Good.

Each of the plurality of semiconductor chips 3 is obtained by cutting a semiconductor wafer into a predetermined size in advance and fragmenting it into chips. The thickness of the semiconductor chip 3 is preferably 1 μm to 1000 μm, more preferably 10 μm to 500 μm, and more preferably 20 μm to 200 μm, from the viewpoint of suppressing cracks during transportation or crimping process, in addition to miniaturization and thinning of the semiconductor device. Is more preferable.

By using the temporary fixing material layer 21 having the above-described configuration, it is possible to manufacture the semiconductor device at a high temperature using the support 1, and after the manufacturing, the temporary fixing material layer 21 is attached to the semiconductor chip 3 and the support 1 at room temperature. Can be peeled off without adhesive residue.

<Third process>
Next, as shown in FIG. 3D, a semiconductor chip in which a sealing body 4 covering a plurality of semiconductor chips 3 arranged on the temporary fixing material layer 21 is formed, and the semiconductor chip 3 and the sealing body 4 are provided. Obtain the sealant 41. The material of the sealing body 4 is not particularly limited, but a thermosetting resin composition is preferable from the viewpoint of heat resistance, other reliability, and the like. Examples of the thermosetting resin used in the sealant 4 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. Additives such as fillers and / or flame-retardant substances such as brom compounds may be added to the composition for forming the sealant 4.

The supply form of the sealing body 4 is not particularly limited, and examples thereof include a solid material, a liquid material, a fine-grained material, and a sheet material.

For example, a compression sealing molding machine, a vacuum laminating device, or the like is used to seal the semiconductor chip 3 with the sealing body 4 formed from the sealing sheet. For example, using the above apparatus, heat is applied under the conditions of 40 ° C. to 180 ° C. (preferably 60 ° C. to 150 ° C.), 0.1 to 10 MPa (preferably 0.5 to 8 MPa), and 0.5 to 10 minutes. The semiconductor chip 3 can be covered with the molten sealing sheet to form the sealing body 4. The sealing sheet may be prepared in a state of being laminated on a release liner such as a polyethylene terephthalate (PET) film. In this case, the sealing body 4 can be formed by arranging the sealing sheet on the semiconductor chip 3 side, embedding the semiconductor chip 3, and then peeling off the release liner.

It is essential that the thickness of the sealing sheet is equal to or larger than the thickness of the semiconductor chip 3 in the sealing body 4. In this case, the thickness of the sealing sheet is preferably 50 μm to 2000 μm, more preferably 70 μm to 1500 μm, and further preferably 100 μm to 1000 μm in view of the thickness of the semiconductor chip 3. When the thickness of the sealing sheet is 50 μm or more, it tends not to be necessary to make the thickness of the semiconductor chip 3 used excessively thin. In this case, the semiconductor chip 3 tends to be less likely to crack when the semiconductor chip 3 is arranged on the temporary fixing material layer 21 or when the semiconductor chip 3 is embedded and sealed with a sealing sheet. Further, when the thickness of the sealing sheet is 2000 μm or less, the time required for the subsequent steps can be further reduced.

The method for producing the sealing sheet is not particularly limited. For example, a method of preparing a kneaded product of the above resin composition and applying the obtained kneaded product to form a sealing sheet, or a method of plastically processing the obtained kneaded product into a sheet to form the kneaded product can be mentioned. Be done.

Further, after covering the semiconductor chip 3 with the sealing body 4, heat treatment for the purpose of thermosetting can be performed under predetermined conditions. In this case, the entire sealing body 4 covering the semiconductor chip 3 can be heated. As a condition of the thermosetting treatment, the heating temperature is 100 ° C. or higher, preferably 120 ° C. or higher. On the other hand, the upper limit of the heating temperature is 200 ° C. or lower, preferably 180 ° C. or lower. The heating time is 10 minutes or more, preferably 180 minutes or less.

<Fourth process>
Next, as shown in FIG. 4A, the semiconductor chip encapsulant 41 is ground so that the surface 3a of the embedded semiconductor chip 3 is exposed. The method for grinding the semiconductor chip encapsulant 41 is not particularly limited, and a known grinding method can be used. For example, a grinding method using a grindstone that rotates at high speed can be mentioned. In this case, it is preferable that the grinding is performed while cooling the sealing body and the grindstone (diamond or the like) with water. The surface 3a of the semiconductor chip 3 is a surface opposite to the support 1 side. By grinding or the like, for example, a bump provided on the semiconductor chip or a part of the lead-out wiring can be exposed.

Examples of the grinding device include DGP-8761 (trade name) manufactured by DISCO Corporation. The cutting conditions in this case can be arbitrarily selected according to the desired thickness of the semiconductor device and the grinding state.

<Fifth process>
Next, as shown in FIG. 4B, in the ground semiconductor chip sealant 42, the rewiring (wiring) 5 is formed on the surface 3a of the semiconductor chip 3 exposed by grinding. As a method for forming the rewiring 5, for example, a metal seed layer is formed on the exposed semiconductor chip 3 by using a known method such as a vacuum film forming method, and then a known method such as a semi-additive method is used. , The rewiring 5 can be formed. After forming the rewiring 5, an insulating layer such as polyimide or PBO (polybenzoxazole) may be formed on the rewiring 5 and the encapsulant. In the semi-additive method, a metal seed layer is formed, a resist having a desired pattern is formed on the metal seed layer, and an exposed portion of the metal seed layer is thickened by an electrolytic plating method or the like to remove the resist. After that, a thin metal seed layer is etched to obtain wiring.

Next, as shown in FIG. 4C, bumping is performed to form the bump 6 on the formed rewiring 5. The bumping process can be performed by a known method using solder balls, solder plating, or the like. In the following, the device forming body 7 is an aggregate of the semiconductor chip encapsulant 42 that has undergone the fourth step and the fifth step, that is, the semiconductor chip 3 on which the rewiring 5 and the bump 6 are formed and the ground encapsulating body 4. Also called.

<Sixth step>
5 (a), 5 (b), 6 (a) and 6 (b) describe an embodiment of a step of separating the device forming body 7 from the support 1 and the temporary fixing material layer 21. It is a schematic cross-sectional view for this. The steps according to the present embodiment include a first peeling step of separating the device forming body 7 with the temporary fixing material layer 21 from the support 1 and a second peeling step of separating the temporary fixing material layer 21 from the device forming body 7. Including the process. That is, the surface of the semiconductor chip is exposed by grinding the sealing body 4, wiring and the like are formed on the surface side of the semiconductor chip, and then the device forming body 7 is peeled off from the support 1 and the temporary fixing material layer 21 before dicing. It is a process.

The first peeling step is a step of peeling the device forming body 7 from the support. As a peeling method, a method of separating the device forming body 7 and the support 1 by sliding them in opposite directions along the horizontal direction while heating (preferably 200 to 250 ° C.), FIG. 5 (Peeling method). A method of fixing one of the support 1 and the device forming body 7 or the support 1 horizontally as shown in b) and lifting the other at a constant angle from the horizontal direction, and the device forming body 7 Examples thereof include a method in which a protective film is attached and the device forming body 7 and the protective film are peeled off from the support by a peel method. These methods can be adopted without particular limitation.

All of these peeling methods can be applied to the present embodiment, but one of the support 1 and the device forming body 7 or the support 1 as shown in FIG. 5B is horizontally fixed. A method of lifting the other side at a constant angle from the horizontal direction, a method of attaching a protective film to the device forming body 7, and a method of peeling the device forming body 7 and the protective film by a peel method are more suitable. These peeling methods are usually carried out at room temperature, but may be carried out at a temperature of about 40 to 100 ° C. that does not damage the device forming body. When mechanically disassembling, for example, a De-Bonding device EVG805EZD (trade name) manufactured by EVG is used.

When the temporary fixing material layer 21 contains a photothermal conversion material, by using a support having light transmission for the support 1, it is possible to peel off with less stress than mechanical peeling by radiant energy 8. is there. In the step of peeling the temporary fixing material layer 21 and the device forming body 7 from the light transmitting support 1, as shown in FIG. 5A, the temporary fixing material 8 is radiant energy 8 from the light transmitting support 1 side. The layer 21 is irradiated. At this time, the radiant energy 8 is absorbed by the photothermal conversion material contained in the temporary fixing material layer 21, and the radiant energy 8 is converted into thermal energy in the temporary fixing material layer 21. The generated thermal energy rapidly raises the temperature of the photothermal conversion material, so that the components (for example, resin components) constituting the temporary fixing material layer 21 are thermally decomposed. As a result, voids (voids) are generated in the temporary fixing material layer 21 (particularly near the interface between the temporary fixing material layer 21 and the light-transmitting support 1), and the light-transmitting support 1 becomes the temporary fixing material. It becomes easy to separate from the layer 21.

The radiant energy 8 has a wavelength of light absorbed by the temporary fixing material layer 21, and the temporary fixing material layer 21 is thermally melted or thermally decomposed to form a light-transmitting support 1 and the temporary fixing material layer 21. It is supplied by a laser beam that can output light of sufficient energy to separate the light. Specific examples of the laser light include a YAG laser that generates light having a wavelength of 1064 nm, a double-gradation YAG laser that generates light having a wavelength of 532 nm, and a semiconductor laser that generates light having a wavelength of 780 nm to 1300 nm. .. From the viewpoint of the scale, versatility, cost, etc. of the laser irradiation device, a YAG laser that generates light having a wavelength of 1064 nm is preferably used as the laser light. Regarding the laser irradiation conditions, consider the balance between the output that separates the light-transmitting support 1 and the temporary fixing material layer 21, and the output that can reduce damage to the device forming body 7 and reduce energy leakage to the adjacent region. Is set.

In the second peeling step, for example, the temporary fixing material 2 is peeled off by fixing the device forming body 7 horizontally and lifting the end of the temporary fixing material layer 21 at a constant angle from the horizontal direction. The device forming body 7 can be obtained (see FIGS. 6 (a) and 6 (b)). For example, an adhesive tape having a higher adhesive strength than the device forming body 7 and the temporary fixing material layer 21 is attached to the surface of the temporary fixing material layer 21 opposite to the surface in contact with the device forming body 7, and then the adhesive is applied. A method may be adopted in which the tape and the temporary fixing material layer 21 are collectively peeled off from the device forming body 7. As a result, as shown in FIG. 6B, the temporary fixing material layer 21 is removed from the device forming body 7. In the present embodiment, the temporary fixing material layer 21 is formed by using the temporary fixing resin composition according to the present embodiment, so that the device forming body 7 in which the residue such as adhesive residue is sufficiently reduced can be easily obtained. Obtainable.

In the present embodiment, the device forming body 7 and the temporary fixing material layer 21 may be separated in the first peeling step.

<Washing process>
If a part of the temporary fixing material layer 21 remains on the peeled device forming body 7, a cleaning step for removing the temporary fixing material layer 21 can be provided. The temporary fixing material layer 21 can be removed, for example, by washing the device forming body 7.

The cleaning liquid used is not particularly limited as long as it can remove a part of the temporary fixing material layer 21 remaining. Examples of the cleaning liquid include the above-mentioned organic solvent that can be used for diluting the resin composition for temporary fixing. These organic solvents may be used alone or in combination of two or more.

If the remaining temporary fixing material layer 21 is difficult to remove, bases and acids may be added to the organic solvent. As examples of bases, amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine and ammonia; and ammonium salts such as tetramethylammonium hydroxide can be used. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid and dodecylbenzenesulfonic acid can be used. The amount added is preferably 0.01 to 10% by mass in terms of the concentration in the cleaning liquid. In addition, an existing surfactant may be added in order to improve the removability of the residue.

The cleaning method is not particularly limited, and examples thereof include a method of cleaning with a paddle using the above cleaning liquid, a cleaning method of spraying, and a method of immersing in a cleaning liquid tank. The temperature at this time is preferably 10 to 80 ° C, more preferably 15 to 65 ° C. Finally, it is washed with water or alcohol and dried to obtain the device forming body 7.

As described above, according to the temporary fixing resin composition according to the present embodiment, the residue such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.

Next, as shown in FIG. 6C, dicing of the device forming body 7 composed of elements such as the semiconductor chip 3, the sealing body 4, the rewiring 5, and the bump 6 is performed. Specifically, the semiconductor chip 3 provided with the rewiring 5 and the bump 6 is separated by dicing the encapsulant 4 located between the adjacent semiconductor chips 3. As a result, the semiconductor element 9 whose wiring is pulled out to the outside of the chip region can be obtained.

In the present embodiment, the semiconductor device can be manufactured by connecting the obtained semiconductor element 9 to another semiconductor element or a substrate for mounting the semiconductor element.

According to the method for manufacturing a semiconductor device according to the present embodiment, a thin and high-density semiconductor device such as a fan-out type wafer level package can be manufactured with low stress.

As described above, by providing the temporary fixing material layer formed from the temporary fixing resin composition according to the present embodiment, the semiconductor chip and its sealing body are sufficiently fixed to the support for grinding and wiring. Processing such as formation can be performed satisfactorily, and after processing, the temporary fixing material layer can be easily peeled off from the semiconductor chip and the encapsulant without performing an operation such as immersing the temporary fixing material layer in a solvent or the like. , The semiconductor device can be manufactured efficiently. Further, in the manufacturing method according to the present embodiment, the temporary fixing material layer can be easily peeled off from the processed semiconductor chip encapsulant, so that the stress on the semiconductor chip can be further reduced. When the temporary fixing material layer contains a photothermal conversion material, the temporary fixing material layer is formed by irradiating the temporary fixing material layer with radiant energy from the support side by using a support having light transmittance for the support. Can be easily peeled off, and then the temporary fixing material layer can be easily peeled off from the semiconductor chip and the encapsulant, so that the stress on the semiconductor chip can be further reduced.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.

(Examples 1 to 15, Comparative Examples 1 to 7)
[Preparation of varnish for temporary fixing resin composition]
A varnish (solid) of a resin composition for temporary fixing, which is a mixture of a thermoplastic resin, a silicone compound, a thermosetting component, a photothermal conversion material, a curing accelerator, and cyclohexanone as a solvent in the composition of parts by mass shown in Tables 1 to 4. Minor concentration 30% by mass) was prepared respectively.

[Preparation of resin film for temporary fixing]
The prepared varnish is applied onto the release-treated surface of a release-treated polyethylene terephthalate film (manufactured by Teijin DuPont Film Co., Ltd., trade name: A31, thickness: 38 μm), and is applied at 90 ° C. for 10 minutes and at 120 ° C. for 30 minutes. The mixture was heat-dried to obtain a protective film and a resin film for temporary fixing with a support film, respectively. The film thickness of the temporary fixing resin film was 30 μm. The following tests were carried out using the prepared resin films for temporary fixing of Examples 1 to 9 and Comparative Examples 1 to 7, and the evaluation results are summarized in Tables 5 to 8.

[Low temperature stickability test]
A resin film for temporary fixing with a support film was cut out into a circular shape having a diameter 2 mm smaller than the diameter of the support. After that, a resin film for temporary fixing is laminated on the support using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd. at an atmospheric pressure of 1 hPa or less, a crimping temperature of 80 ° C., a laminating pressure of 0.5 MPa, and a holding time of 60 seconds for temporary fixing. A support with a resin film was obtained. In the visual observation of the support with the temporary fixing resin film, the sample in which the temporary fixing resin film was not peeled was evaluated as “◯”, and the sample in which the peeling was observed was evaluated as “x”. As the support, a silicon wafer was used for mechanical peeling, and a glass support was used for laser peeling.

[Tip crimpability test]
Flip-chip bonder manufactured by Shinkawa Co., Ltd. so that the back surface of a semiconductor chip processed to a thickness of 10 mm × 10 mm and 150 μm is bonded to a resin film for temporary fixing for a sample whose evaluation was “○” in the low-temperature stickability test. The semiconductor chip was crimped to a support with a resin film for temporary fixing at a crimping pressure of 0.05 MPa, a crimping temperature of 80 ° C., and a crimping time of 10 seconds. Then, the oven was held at 110 ° C. for 30 minutes and then held at 170 ° C. for 1 hour to obtain a semiconductor chip mounting sample. The semiconductor chip mounted sample was visually observed and observed with a microscope, and the sample in which the semiconductor chip was not peeled or displaced was evaluated as “◯”, and the sample in which the semiconductor chip was peeled or displaced was evaluated as “x”.

[Seal resistance test]
For the sample whose evaluation was "○" in the chip crimping property test, the semiconductor chip mounting surface was 8 inch size with a sealing material (CEL-9750ZHF10AKLC1) using the compression sealing equipment (WCM-300MS) manufactured by Apic Yamada Corporation. Compression sealed. Sealing was performed under the conditions of a sealing temperature of 140 ° C., a sealing pressure of 4.8 MPa, and a sealing time of 10 minutes. Next, the encapsulant was heat-cured in an oven at 170 ° C. for 5 hours to obtain an encapsulant sample. A sample in which the temporary fixing film did not melt (flow of temporary fixing material) or chip misalignment occurred at the time after curing was marked with "○", and a sample in which the temporary fixing film melted (temporary fixing material flow) or chip misalignment occurred. Was evaluated as "x".

[Backgrinding test]
In the sealing resistance test, the surface of the sealing body was ground using a fully automatic grinding machine (DGP-8761 manufactured by DISCO Corporation) for the sealing body sample having an evaluation of “◯”. For the wheels, 1 axis: GF01-SDC320-BT300-50, 2 axes: IF-01-1--4 / 6-B · K09, and 3 axes: DPEG-GA0001 were used. Grinding was performed by a cross-feed method with the chuck table rotation speed of 300 rpm and the wheel rotation speed of 1 axis: 3,200 rpm, 2 axes: 3,400 rpm, and 3 axes: 1,400 rpm. The sealed body sample was ground to a thickness of 192 μm on one axis and then to a thickness of 152 μm on two axes and to a thickness of 150 μm on three axes to obtain a device forming body. A sample in which cracks did not occur at the end of grinding was evaluated as "○", and a sample in which cracks or the like occurred was evaluated as "x". As for Comparative Example 6, since the result of the sealing resistance test was “x”, this test and the following tests were not performed.

[Heat resistance test]
In the backgrinding test, the state of the temporary fixing resin film was confirmed using an ultrasonic microscope (SAM, manufactured by Insight Co., Ltd., Insight-300) for the sample having an evaluation of "○". Then, the sample was left in the oven set at 200 ° C. for 2 hours, and further left in the oven set at 260 ° C. for 20 minutes. Then, the state of the temporary fixing resin film was confirmed again using SAM, and the sample in which the temporary fixing resin film did not peel off even when left in the oven was marked with "○", and the sample in which the peeling occurred was marked with "x". I evaluated it.

[Peelability test from support]
When the peeling method is "mechanical", for the sample evaluated as "○" in the heat resistance test, insert tweezers with a sharp tip between the support and the resin film for temporary fixing, and put it on the outer edge. I moved the tweezers along. At this time, the sample in which the support could be peeled off without cracking the device forming body was evaluated as “◯”, and the sample in which the support could not be peeled off was evaluated as “x”.

When the peeling method is "laser", for the sample evaluated as "○" in the heat resistance test, the laser output is 10 W, the frequency is 30 kHz, the laser scan speed is 4000 m / s, and the laser scan width is from the light transmitting support side. Under the condition of 0.3 mm, radiant energy was irradiated by a YAG laser that generates light having a wavelength of 1064 nm. After that, the light-transmitting support was manually peeled off from the temporary fixing resin film. At this time, the sample in which the support could be peeled off without breaking the device forming body was evaluated as “◯”, and the sample in which the support could not be peeled off was evaluated as “x”.

[Peelability test from device forming body]
For the sample whose evaluation was "○" in the peelability test from the support, the end of the temporary fixing resin film attached to the device forming body was lifted with tweezers. At this time, the sample from which the temporary fixing resin film could be peeled off from the device forming body was evaluated as “◯”, and the sample that could not be peeled off was evaluated as “x”. In Comparative Example 5, the result of the peelability test from the support was “x”, so this test was not performed.

Details of each component in Tables 1 to 4 are as follows.
HTR-860P-3CSP: GPC weight average molecular weight 800,000, glycidyl methacrylate 3% by mass, Tg 12 ° C acrylic rubber (manufactured by Nagase ChemteX Corporation)
HTR-280-CHN: Acrylic rubber with a weight average molecular weight of 900,000 by GPC, 8% by mass of acrylic acid, and Tg-29 ° C (manufactured by Nagase ChemteX Corporation)
TA31-209E: Silicone-modified alkyd resin (manufactured by Hitachi Chemical Polymer Co., Ltd.)
SH3773M: Polyether-modified silicone compound (manufactured by Toray Dow Corning Co., Ltd.)
YDCN-700-10: Cresol novolac type polyfunctional epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
XLC-LL: Phenolic aralkyl resin (manufactured by Mitsui Chemicals, Inc.)
FP Black C1115: Carbon black paste (Nv.30%, particle size: 300-500 nm) (manufactured by Sanyo Dye Co., Ltd.)
2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Chemicals Corporation)

100 ... Temporary fixing resin film sheet, 200 ... Temporary fixing resin film sheet, 10 ... Support film, 20 ... Temporary fixing resin film, 30 ... Protective film, 1 ... Support, 21 ... Temporary fixing material layer, 3 ... Semiconductor chip, 3a ... Surface of semiconductor chip, 4 ... Encapsulant, 41, 42 ... Semiconductor chip encapsulant, 5 ... Rewiring, 6 ... Bump, 7 ... Device form, 8 ... Radiation energy, 9 ... Semiconductor element ..

Claims (13)

A resin composition for temporary fixing, which contains a thermoplastic resin , a silicone compound, and a photothermal conversion material , and is used for temporarily fixing a semiconductor chip and a sealing body that seals the semiconductor chip. The resin composition for temporary fixing according to claim 1, wherein the thermoplastic resin is a (meth) acrylic copolymer having a reactive group. The resin composition for temporary fixing according to claim 1 or 2, wherein the silicone compound is a silicone-modified alkyd resin. The resin composition for temporary fixing according to any one of claims 1 to 3, further containing a curing accelerator. The temporary fixing resin composition according to any one of claims 1 to 4, further containing a thermosetting resin. The resin composition for temporary fixing according to any one of claims 1 to 5, wherein the photothermal conversion material is carbon black. A temporary fixing resin film obtained by forming the temporary fixing resin composition according to any one of claims 1 to 6 in the form of a film. A resin film sheet for temporary fixing, comprising a support film having releasability and the resin film for temporary fixing according to claim 7, which is provided on the support film. The first step of providing the temporary fixing material layer formed from the temporary fixing resin composition according to any one of claims 1 to 6 on the support, and the first step.
The second step of arranging the semiconductor chip on the temporary fixing material layer and
A third step of providing an encapsulant covering the semiconductor chip and forming a semiconductor chip encapsulant having the semiconductor chip and the encapsulant.
A fourth step of grinding the semiconductor chip encapsulant so that the surface of the semiconductor chip opposite to the support is exposed.
The fifth step of forming the wiring on the exposed surface of the semiconductor chip, and
The sixth step of peeling the temporary fixing material layer from the semiconductor chip encapsulant that has undergone the fourth step and the fifth step, and the sixth step.
A method for manufacturing a semiconductor device. The manufacturing method according to claim 9 , wherein in the first step, the temporary fixing material layer is formed by attaching the temporary fixing resin film according to claim 7 onto the support. The manufacturing method according to claim 9 or 10 , wherein the support is a light-transmitting support. The manufacturing method according to claim 11 , wherein the sixth step is to irradiate the temporary fixing material layer with radiant energy from the light transmissive support side and then peel the temporary fixing material layer from the semiconductor chip encapsulant. .. The production method according to claim 12 , wherein the radiant energy includes light having a wavelength of 1064 nm generated by a YAG laser.

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