JP2019075436A - Semiconductor device and semiconductor device manufacturing method - Google Patents

Abstract

Provided is a semiconductor device capable of efficiently cooling a wiring layer. A semiconductor device (100) includes a first flow channel member (1), a second flow channel member (2), and a circuit unit (10) located between the first flow channel member and the second flow channel member. The circuit unit has a heat sink layer 3a, wiring layers 4a to 4d, and a semiconductor element 5 located between the heat sink layer and the wiring layer. At least one of the first flow channel member and the second flow channel member includes first portions 7a and 7b of insulating ceramics that form a part of the flow channel, and a second portion 8a that is made of a material different from that of the first portion. , 8b. The wiring layer in the circuit unit is in contact with the first portion. [Selection diagram] Figure 1

Description

  The present disclosure relates to a semiconductor device and a method of manufacturing the semiconductor device.

Semiconductor devices for large power are widely used as power converters for railway vehicles and the like. As such a semiconductor device, for example, IGBT (Insulated Gate Bipolar Transistor)
An inverter or the like employing a semiconductor element such as In semiconductor devices for high power, the amount of heat generation due to switching loss, conduction loss, and the like is enormous, and thus semiconductor devices that have been subjected to cooling measures are known (see, for example, Patent Document 1).

JP, 2010-97967, A

  In a high power semiconductor device, the wiring layer for inputting a signal to the semiconductor element is apt to generate heat, and the heat of the wiring layer is transmitted to the semiconductor element, causing a problem that the semiconductor element does not function properly. There is a fear.

  Therefore, the present disclosure is devised in view of such circumstances, and it is an object of the present disclosure to provide a semiconductor device capable of efficiently cooling a wiring layer and a method of manufacturing the semiconductor device.

  The semiconductor device of the present disclosure includes a first flow passage member, a second flow passage member, and a circuit unit positioned between the first flow passage member and the second flow passage member. The circuit unit has a heat sink layer, a wiring layer, and a semiconductor element located between the heat sink layer and the wiring layer. Furthermore, at least one of the first flow path member and the second flow path member may be formed of a first portion of the insulating ceramic forming part of the flow path, and a second portion different in material from the first portion. And a site. The wiring layer in the circuit unit is in contact with the first portion.

  In the method of manufacturing a semiconductor device according to the present disclosure, a brazing material, solder or nano paste is disposed between the semiconductor element and the wiring layer, and the brazing material is provided between the semiconductor element and the heat sink layer. Placing the solder or the nano paste, placing an adhesive between the first portion and the second portion in at least one of the first flow path member and the second flow path member, and wiring The heat treatment is performed after arranging the first flow path member and the second flow path member such that the layer, the semiconductor element, and the heat sink layer are aligned, and the first portion and the wiring layer are in contact with each other.

  The semiconductor device of the present disclosure can efficiently cool the semiconductor element, so that the decrease in the function of the semiconductor element is small.

  The method of manufacturing a semiconductor device of the present disclosure can manufacture a semiconductor device in a short time.

It is a sectional view showing typically an example of a semiconductor device of this indication. It is the schematic which looked at the circuit unit in the semiconductor device of FIG. 1 from the side. FIG. 7 is a cross-sectional view schematically showing another example of the semiconductor device of the present disclosure. FIG. 7 is a cross-sectional view schematically showing another example of the semiconductor device of the present disclosure. FIG. 7 is a cross-sectional view schematically showing another example of the semiconductor device of the present disclosure. FIG. 7 is a cross-sectional view schematically showing another example of the semiconductor device of the present disclosure. FIG. 7 is a cross-sectional view schematically showing another example of the semiconductor device of the present disclosure.

  Hereinafter, an example of a semiconductor device and a method of manufacturing the semiconductor device according to the present disclosure will be described with reference to the drawings.

  As shown in FIG. 1, the semiconductor device 100 of the present disclosure is a circuit positioned between the first flow passage member 1, the second flow passage member 2, and the first flow passage member 1 and the second flow passage member 2. And a unit 10.

  And circuit unit 10 in semiconductor device 100 of this indication has heat sink layer 3a, wiring layers 4a-4d, and semiconductor device 5 located between heat sink layer 3a and wiring layers 4a-4d. Here, as shown in FIG. 1, each of the wiring layers 4 a to 4 d may be connected to the semiconductor element 5 via a brazing material, solder or nanopaste (hereinafter collectively referred to as a bonding layer). Good (bonding layers 9a to 9d). The heat sink layer 3a may also be connected to the semiconductor element 5 via the bonding layer 9e.

  Here, the first flow path member 1 and the second flow path member 2 have flow paths 6a and 6b for flowing a cooling medium (hereinafter, also referred to as "refrigerant") in their respective interiors. Here, the refrigerant may be a liquid or gas capable of heat exchange with the circuit unit 10. For example, as a liquid refrigerant, pure water, a fluorine-based fluid, or the like may be used, and an antirust agent may be added to these. As described above, the circuit unit 10 including the wiring layers 4 a to 4 d can be cooled from both sides by flowing the refrigerant through the flow path 6 a of the first flow path member 1 and the flow path 6 b of the second flow path member 2. it can.

  Here, the wiring layers 4 a to 4 d in the circuit unit 10 of the semiconductor device 100 of the present disclosure are wires or terminals for connection to an external device, a signal terminal or the like. Moreover, although the heat sink layer 3a in the circuit unit 10 of the semiconductor device 100 of this indication is a member for releasing heat, you may function as an electrode by sending an electric current.

The semiconductor element 5 in the circuit unit 10 of the semiconductor device 100 of the present disclosure is, for example, a power semiconductor such as an IGBT or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The circuit unit 10 may have other semiconductor elements (for example, FWD (Free Wheeling Diode)), capacitors, resistors, and the like as circuit elements other than power semiconductors.

  For example, FIG. 2 shows an example in which the semiconductor element 5 is an IGBT, the heat sink layers 3a and 3b function as electrodes, the collector of the semiconductor element 5 is on the heat sink layer 3a side, and the gate of the semiconductor element 5 is Is on the side of the wiring layer 4d, the emitter of the semiconductor device 5 is on the side of the heat sink layer 3b, the heat sink layer 3a is connected to the collector of the semiconductor device 5 via the bonding layer 9e, and the wiring layer 4a is bonded to the gate of the semiconductor device 5 The heat sink layer 3b is connected to the emitter of the semiconductor element 5 via the bonding layer 9f.

The wiring layer 4 and the heat sink layer 3 may be made of metal, but among metals, copper, a copper alloy, aluminum, an aluminum alloy or the like has excellent thermal conductivity. It becomes a thing. The bonding layer 9 may be, for example, a silver-based brazing material, a tin-based solder, a nanopaste of gold, silver, copper or nickel.

  And in the semiconductor device 100 of the present disclosure, at least one of the first flow path member 1 and the second flow path member 2 is a first portion 7a of insulating ceramic that constitutes a part of the flow paths 6a and 6b, 7b and the first portions 7a and 7b have second portions 8a and 8b of different materials, and the wiring layers 4a to 4d in the circuit unit 10 are in contact with the first portion 7a. In addition, in FIG. 1, the 1st flow-path member 1 has shown the example which has 1st site | part 7a and 2nd site | part 8a, and 2nd flow-path member 2 has 1st site | part 7b and 2nd site | part 8b. Further, FIG. 1 shows an example in which the wiring layers 4a to 4d in the circuit unit 10 are in contact with the first portion 7a of the first flow path member 1, but the wiring layers 4a to 4d in the circuit unit 10 are It goes without saying that the circuit unit 10 may be disposed to be in contact with the first portion 7 b of the second flow path member 2.

  Further, since the first portions 7a and 7b are made of insulating ceramics, the wiring layers 4a to 4d for flowing current are disposed in direct contact with the first portions 7a and 7b. Further, since the first portions 7a and 7b respectively constitute a part of the flow paths 6a and 6b, the heat generated in the wiring layers 4a to 4d can be efficiently dissipated to the refrigerant flowing in the flow paths 6a and 6b. Can. Therefore, by satisfying such a configuration, the heat generated in the wiring layers 4a to 4d can be efficiently cooled. Therefore, in the semiconductor device 100 of the present disclosure, the heat of the wiring layers 4a to 4d is It is less likely to occur the problem that the semiconductor element 5 does not function properly because it is transmitted to the semiconductor element 5.

  Here, as the insulating ceramics constituting the first portions 7a and 7b, alumina ceramics, alumina-zirconia composite ceramics, aluminum nitride ceramics, silicon nitride ceramics and the like may be used. In particular, among insulating ceramics, silicon nitride ceramics have both excellent thermal conductivity and mechanical strength, so the semiconductor of the present disclosure can be formed by forming the first portions 7a and 7b with silicon nitride ceramics. The device 100 combines excellent heat dissipation and mechanical strength.

For example, the silicon nitride ceramic contains 70% by mass or more of silicon nitride in 100% by mass of all components constituting the ceramic. And the material which comprises 1st site | part 7a, 7b can be confirmed with the following method. First, measurement is performed using an X-ray diffractometer (XRD), and the obtained value of 2θ (2θ is a diffraction angle) is identified by a JCPDS card. Next, quantitative analysis of each component is performed using an ICP (Inductively Coupled Plasma) emission spectrometer (ICP) or a fluorescent X-ray analyzer (XRF). Here, if the presence of silicon nitride is confirmed in XRD and the content of silicon (Si) measured by ICP or XRF is converted to silicon nitride (Si ₃ N ₄ ), the content is 70% by mass or more, Silicon nitride ceramics. The same applies to other ceramics.

  The second portion 8a is made of a material different from that of the first portion 7a, but may be made of metal, resin, or a ceramic different from the first portion 7a. For example, if the first portion 7a is made of silicon nitride ceramic and the second portion 8a is made of silicon carbide ceramic, the silicon carbide ceramic has higher thermal conductivity than the silicon nitride ceramic. The heat dissipation of the first flow path member 1 can be enhanced as compared to the case where the first flow path member 1 is entirely made of silicon nitride ceramic. In addition, if the first portion 7a is made of silicon nitride ceramic and the second portion 8a is made of alumina ceramic, the alumina ceramic is cheaper than silicon nitride ceramics in manufacturing cost, so The passage member 1 can be manufactured inexpensively. The relationship between the first portion 7b and the second portion 8b may be similar to the relationship between the first portion 7a and the second portion 8a described above.

Further, the second portion 8a may have a smaller density than the first portion 7a. If such a configuration is satisfied, the weight of the first flow path member 1 can be reduced. For example, if the first portion 7a is made of silicon nitride ceramics (about 3.3 g / cm ³ ), aluminum (about 2.7 g / cm ³ ) if it is a metal, and polyimide resin (about if it is a resin) If the second portion 8a is made of 1.4 g / cm ³ ) ceramic or cordierite ceramic (about 2.5 g / cm ³ ), the second portion 8a has a density higher than that of the first portion 7a. It will be small. The relationship between the first portion 7b and the second portion 8b may be similar to the relationship between the first portion 7a and the second portion 8a described above.

  Further, the first flow path member 1 and the second flow path member 2 in the semiconductor device 100 of the present disclosure respectively have the first portions 7a and 7b and the second portions 8a and 8b, and the wiring layers 4a to 4 in the circuit unit 10 4 d and the heat sink layer 3 a may be in contact with the first portions 7 a and 7 b of the first flow path member 1 and the second flow path member 2 respectively. In FIG. 1, the wiring layers 4 a to 4 d are in contact with the first portion 7 a of the first flow path member 1, and the heat sink layer 3 a is in contact with the first portion 7 b of the second flow path member 2. However, it goes without saying that the wiring layers 4 a to 4 d may be in contact with the first portion 7 b of the second flow path member 2 and the heat sink layer 3 a may be in contact with the first portion 7 a of the first flow path member 1. If such a configuration is satisfied, the semiconductor element 5 can be cooled more efficiently through the wiring layers 4 a to 4 b and the heat sink layer 3 a.

  In addition, as shown in FIG. 3, the semiconductor device 200 of the present disclosure may have protrusions 11 a to 11 h on the surfaces of the first portions 7 a and 7 b in the flow paths 6 a and 6 b. If such a configuration is satisfied, the projections 11a to 11h generate turbulent flow in the refrigerant flowing in the flow paths 6a and 6b, thereby improving the heat exchange efficiency with the refrigerant via the first portions 7a and 7b. It can be done.

  Here, the protrusions 11a to 11h may be made of any material, but if copper or aluminum is the main component, the first portions 7a and 7b are interposed due to high thermal conductivity. The heat exchange efficiency with the refrigerant is further improved. In addition, copper or aluminum is 50 mass% or more of copper or aluminum among 100 mass% of all the components which comprise protrusion part 11a-11h.

  Further, as shown in FIG. 4, in the arrangement of the circuit units, the semiconductor device 300 of the present disclosure includes the first circuit unit 10, the wiring layer, the semiconductor element, and the heat sink layer in the order of the heat sink layer, the semiconductor element, and the wiring layer. When the order is the second circuit unit 20, the first circuit unit 10 and the second circuit unit 20 may be positioned adjacent to each other between the first flow passage member 1 and the second flow passage member 2 . In FIG. 4, the first circuit unit 10 and the second circuit unit 20 are disposed adjacent to each other and upside down, that is, “heat sink layer → semiconductor element → wiring layer” and “wiring layer → semiconductor element → As in the heat sink layer, the stacking order is reversed. If such a structure is satisfied, the balance of heat generated by each circuit unit (the first circuit unit 10, the second circuit unit 20) can be determined by the arrangement relationship between the first circuit unit 10 and the second circuit unit 20. Thus, each circuit unit can be cooled efficiently.

  Although FIG. 4 shows an example in which two circuit units are arranged side by side, the present invention is not limited to this. The number of circuit units may be three or more, and each circuit unit is arranged in front and back. It may be Moreover, in FIG. 4, although the first circuit unit 10 and the second circuit unit 20 are in contact with the same first portions 7 a and 7 b, the first flow path member 1 and the second flow path member 2 There may be a plurality of portions 7 and the first circuit unit 10 and the second circuit unit 20 may be in contact with the separate first portions 7 respectively.

  The first circuit unit 10 and the second circuit unit 20 may not necessarily have the same laminated structure. For example, in the first circuit unit 10 and the second circuit unit 20, even if the wiring layer 4, the semiconductor element 5 and the heat sink layer 3 that constitute each circuit unit are partially different, for example, the heat sink layer 3 or the wiring By changing the thickness of the layer 4 or inserting a metal plate such as copper into the inside of the bonding layer 9, the difference in thickness of each circuit unit is absorbed and the first stress is not generated. It may be configured to fit between the flow passage member 1 and the second flow passage member 2.

  The first flow path member 1 and the second flow path member 2 in the semiconductor device 400 of the present disclosure may be connected by the connecting pipe 12 as shown in FIG. 5. If such a configuration is satisfied, the same refrigerant can flow in the first flow path member 1 and the second flow path member 2, so the semiconductor device 400 can be miniaturized.

  In addition, the semiconductor device 400 of the present disclosure has an adhesive layer between the facing surfaces of the connection pipe 12 and the first flow path member 1 or the second flow path member 2, and a part of the adhesion layer The first flow path member 1 or the second flow path member 2 may extend from the outer peripheral surface of the first flow path member 1. Here, the outer peripheral surface of the connecting pipe 12 is a surface adjacent to the surface facing the first flow path member 1 or the second flow path member 2. If such a configuration is satisfied, the adhesive layer prevents the refrigerant flowing in the flow paths 6a and 6b from leaking between the first flow path member 1 or the second flow path member 2 and the connecting pipe 12 be able to.

  The adhesive layer is coated with an adhesive (for example, a silicone-based brazing material, a polyimide-based adhesive, or the like) between the first flow path member 1 or the second flow path member 2 and the connecting pipe 12 and then heat treatment It may be formed by doing.

  The connecting pipe 12 may be a metal, resin, or ceramic having heat resistance, and may be made of a material that does not undergo thermal expansion and contraction excessively in heat treatment. Polyimide resin etc. are mentioned as resin which does not carry out thermal expansion and thermal contraction excessively in heat processing.

  In addition, as shown in FIG. 6, in the semiconductor device 500 of the present disclosure, when the first flow path member 1, the circuit unit, and the second flow path member 2 are one set of cooling units, in two sets of cooling units, The first flow path member 1 or the second flow path member 2 may be used in combination. FIG. 6 shows a configuration in which the second flow path member 2 is also used in the two sets of cooling units. If such a configuration is satisfied, the cooling units can be three-dimensionally configured by connecting the cooling units with each other by the connecting pipe 12, and the cooling efficiency can be achieved while configuring the circuit unit structure with high density. A high stack type semiconductor device 500 can be realized.

  Note that, instead of the connecting pipe 12, as shown in FIG. 7, a pipe 14 having a connecting hole 13 in which the connecting pipe 12 is integrated may be used. As described above, when the cooling units are connected to each other by using the pipe 14, the stack type semiconductor device 600 can be easily constructed. In this case, if the ring-shaped spacer 15 is prepared and the spacer 15 is disposed so as to surround the pipe 14 between the flow passage members (the first flow passage member 1 and the second flow passage member 2), each flow passage It becomes possible to easily insert the pipe positioned across the members. In addition. The spacer 15 also has an effect of preventing the refrigerant from leaking when the pipe 14 is broken.

  Note that the spacer 15 may be a metal, resin, or ceramic having heat resistance, and may be made of a material that does not undergo thermal expansion and contraction excessively in heat treatment. Polyimide resin etc. are mentioned as resin which does not carry out thermal expansion and thermal contraction excessively in heat processing.

Next, an example of a method of manufacturing a semiconductor device of the present disclosure will be described. Here, the case where the first flow path member and the second flow path member respectively have the first portion and the second portion will be described as an example.

  First, first portions of the first flow path member and the second flow path member, which are made of insulating ceramic, are prepared. Here, the first portion may be produced by an extrusion method of extruding clay with a mold, a doctor blade method using a slurry, a roll compaction method using granules, a lamination method of laminating green sheets, or the like. Moreover, the 2nd site | part of the 1st flow-path member which differs in a material from a 1st site | part, and a 2nd flow-path member is also prepared.

  Next, a wiring layer, a heat sink layer, and a semiconductor element are prepared. Here, the wiring layer is formed on the surface of the first portion of the first flow path member opposite to the side constituting the flow path. Similarly, the heat sink layer is formed on the surface of the first portion of the second flow path member opposite to the side constituting the flow path. Here, as a method of forming the wiring layer and the heat sink layer, diffusion bonding method in which diffusion of atoms is promoted and bonding is performed by bringing the materials to be bonded into close contact with each other and applying pressure and heating, metal plates such as copper plate and aluminum plate are insulating Direct bonding method to paste directly to ceramics, AMB (Active Metal Bonding) method to join metal plates through silver and copper brazing materials added with active metals such as titanium, zirconium, hafnium, niobium etc. Mainly metal components A printing method using a component paste, a sputtering method using titanium or chromium as a base layer to form a metal layer by sputtering, titanium or chromium as a base layer, or metal after forming fine irregularities A plating method or the like for forming a layer may be used.

  Here, in the first region of the first flow path member or the second flow path member, the protrusion may be formed on the surface constituting the flow path by the same formation method as the wiring layer or the heat sink layer. . If the projection is made of insulating ceramic, it may be formed in accordance with the fabrication of the first portion.

  Next, a brazing material, solder or nano paste is disposed between the semiconductor element and the wiring layer, and a brazing material, solder or nano paste is disposed between the semiconductor element and the heat sink layer, and the first flow path member And an adhesive is disposed between the first portion and the second portion of each of the second flow path members, and heat treatment is performed after arranging the wiring layer, the semiconductor element, and the heat sink layer, whereby the semiconductor device of the present disclosure Get As a process of the heat treatment, there is a reflow process in which the solder material, solder or nanopaste solidified once is softened by heating and then cooled to solidify again.

  By adopting such a manufacturing method, the semiconductor element and the wiring layer, the semiconductor element and the heat sink layer, and the first portion and the second portion can be simultaneously bonded, so that the manufacturing time of the semiconductor device can be shortened. In addition, as shown to each figure, if a 1st site | part and a 2nd site | part set it as the structure which has a level | step difference in the mutual joining location, it will become easy to join a 1st site | part and a 2nd site | part.

  Moreover, in order to obtain a semiconductor device in which the first flow path member and the second flow path member are connected by the connection pipe, a brazing material, solder or nano paste is disposed between the semiconductor element and the wiring layer, A brazing material, solder or nano paste is disposed between the element and the heat sink layer, and an adhesive is disposed between the first portion and the second portion of each of the first flow path member and the second flow path member. The wiring layer, the semiconductor element, and the heat sink layer may be arranged, and heat treatment may be performed after an adhesive is disposed between the first flow path member and the connection pipe and between the second flow path member and the connection pipe. If such a manufacturing method is adopted, the semiconductor element and the wiring layer, the semiconductor element and the heat sink layer, the first portion and the second portion, the first flow path member and the connection pipe, the second flow path member and the connection pipe are simultaneously joined. Can reduce the manufacturing time of the semiconductor device. The pipe and the spacer may be bonded with an adhesive instead of the connecting pipe.

  If the connecting pipe and the spacer are made of a material that does not easily expand and shrink excessively in the heat treatment process, the distance between the first flow path member and the second flow path member should be the length of the connecting pipe and the spacer To control the degree of bonding of the brazing material, solder or nanopaste, and the pressure applied to each member, which are located between the semiconductor element and the heat sink layer and between the semiconductor element and the wiring layer It becomes possible. As such a connecting pipe and spacer, any metal, resin or ceramic having heat resistance may be used, but if it is resin, polyimide resin may be used.

  In addition, by sealing the circuit unit in the semiconductor device with a resin mold, the reliability of the semiconductor device can be enhanced. As the resin mold, silicone gel, epoxy resin or the like may be used. In addition, if not only the circuit unit but also the connecting pipe, the pipe, and the spacer are collectively molded by resin, bonding between the connecting pipe, the pipe, the spacer, and the first flow path member and the second flow path member can be reinforced. .

10, 20: circuit unit 1: first flow path member 2: second flow path member 3, 3a, 3b: heat sink layer 4, 4a, 4b, 4c, 4d, 4e: wiring layer 5: semiconductor element 6a, 6b: Flow path 7a, 7b: first portion 8a, 8b: second portion 9, 9a, 9b, 9c, 9d, 9e, 9f: brazing material, solder or nano paste (joining layer)
11a, 11b, 11c, 11e, 11f, 11g, 11h: protrusion 12: connection pipe 13: connection hole 14: pipe 15: spacer 100, 200, 300, 400, 500, 600: semiconductor device

Claims (11)

A first flow path member,
A second flow path member,
A circuit unit positioned between the first flow path member and the second flow path member;
The circuit unit includes a heat sink layer, a wiring layer, and a semiconductor element located between the heat sink layer and the wiring layer.
At least one of the first flow path member and the second flow path member is a first portion of the insulating ceramic forming a part of the flow path, and a second portion whose material is different from the first portion. Have
The semiconductor device, wherein the wiring layer in the circuit unit is in contact with the first portion.   The semiconductor device according to claim 1, wherein the second portion has a density smaller than that of the first portion.   The first flow path member and the second flow path member respectively have the first portion and the second portion, and the wiring layer and the heat sink layer in the circuit unit are the first flow path member and the second portion. The semiconductor device according to claim 1, wherein the first portion of each of the second flow path members is in contact with the first portion.   The semiconductor device according to any one of claims 1 to 3 which has a projection part on the surface of said 1st part in said channel.   The semiconductor device according to claim 4, wherein the protrusion is mainly made of copper or aluminum. In the arrangement of the circuit units,
When the heat sink layer, the semiconductor element, and the wiring layer are in the order of the first circuit unit, the wiring layer, the semiconductor element, and the heat sink layer in the order of the second circuit unit, the first flow path member and the The semiconductor device according to any one of claims 1 to 5, wherein the first circuit unit and the second circuit unit are positioned adjacent to each other between the second flow path members.   The semiconductor device according to any one of claims 1 to 6, wherein the first flow path member and the second flow path member are connected by a connection pipe. An adhesive layer is provided between facing surfaces of the connection pipe and the first flow path member or the second flow path member,
The semiconductor device according to claim 7, wherein a part of the adhesive layer extends from an outer peripheral surface of the connection pipe to the first flow path member or the second flow path member. When the first flow path member, the circuit unit, and the second flow path member are one set of cooling units,
The semiconductor device according to any one of claims 1 to 8, wherein the first flow path member or the second flow path member is used in two cooling units. A method of manufacturing a semiconductor device according to any one of claims 1 to 3.
A brazing material, solder or nano paste is disposed between the semiconductor element and the wiring layer,
The brazing material, the solder, or the nanopaste is disposed between the semiconductor element and the heat sink layer,
An adhesive is disposed between the first portion and the second portion in at least one of the first flow path member and the second flow path member,
A semiconductor device comprising: an array of the wiring layer, the semiconductor element, and the heat sink layer, and heat treatment after disposing the first flow path member and the second flow path member such that the first portion and the wiring layer are in contact with each other. Manufacturing method. A method of manufacturing a semiconductor device according to claim 8 or 9,
A brazing material, solder or nano paste is disposed between the semiconductor element and the wiring layer,
The brazing material, the solder, or the nanopaste is disposed between the semiconductor element and the heat sink layer,
An adhesive is disposed between the first portion and the second portion in at least one of the first flow path member and the second flow path member,
The first flow path member and the second flow path member are disposed such that the first wiring layer, the semiconductor element, and the heat sink layer are aligned, and the first portion and the wiring layer are in contact with each other.
A manufacturing method of a semiconductor device which heat-treats after arranging an adhesive between the 1st channel member and the connecting pipe, and between the 2nd channel member and the connecting pipe.

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