JP2018182253A - 光センサ - Google Patents
光センサ Download PDFInfo
- Publication number
- JP2018182253A JP2018182253A JP2017084462A JP2017084462A JP2018182253A JP 2018182253 A JP2018182253 A JP 2018182253A JP 2017084462 A JP2017084462 A JP 2017084462A JP 2017084462 A JP2017084462 A JP 2017084462A JP 2018182253 A JP2018182253 A JP 2018182253A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- light receiving
- substrate
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0204—Compact construction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0214—Constructional arrangements for removing stray light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0403—Mechanical elements; Supports for optical elements; Scanning arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0256—Compact construction
- G01J3/0259—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0262—Constructional arrangements for removing stray light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
- H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/407—Optical elements or arrangements indirectly associated with the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Geophysics And Detection Of Objects (AREA)
Abstract
【解決手段】光センサ1は、基板2、発光素子3、受光素子、電気部品9を備えている。発光素子3は、基板2の表面2Aに実装されている。受光素子は、発光素子3と異なる位置で、基板2の表面2Aに実装されている。電気部品9は、基板2の裏面2Bに実装されている。電気部品9は、発光素子3および受光素子と電気的に接続されている。電気部品9は、発光素子3および受光素子と重なり合う位置に配置されている。
【選択図】図4
Description
2 基板
3,22〜24 発光素子
4 受光素子
5,25 枠
7,8 透明樹脂部
9 電気部品
10 底部
11 電極端子
32,42 光導波路プレート
33,43〜45 発光側光導波路
34,46 受光側光導波路
Claims (4)
- 基板と、
前記基板の表面に実装された発光素子と、
前記基板の表面に実装された受光素子と、
前記基板の裏面に実装され前記発光素子および前記受光素子に電気的に接続された電気部品と、を備え、
前記電気部品は、前記発光素子および前記受光素子と重なり合う位置に配置されたことを特徴とする光センサ。 - 前記基板の表面側に設けられ前記発光素子と前記受光素子との間を遮光する枠と、
前記発光素子と前記受光素子とを覆う透明な樹脂部とをさらに備えた請求項1に記載の光センサ。 - 前記基板の表面側に設けられ前記発光素子および前記受光素子を覆う光導波路プレートをさらに備え、
前記光導波路プレートは、前記発光素子からの光を外部に導く発光側光導波路と、外部の光を前記受光素子に導く受光側光導波路とを有する請求項1に記載の光センサ。 - 前記基板の裏面側に設けられ前記電気部品を覆う樹脂材料からなる底部と、
前記底部の裏面に設けられ前記電子部品に電気的に接続された電極端子とをさらに備えた請求項1ないし3のいずれかに記載の光センサ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017084462A JP2018182253A (ja) | 2017-04-21 | 2017-04-21 | 光センサ |
CN201711237185.8A CN108735852A (zh) | 2017-04-21 | 2017-11-30 | 光传感器 |
US15/826,749 US20180306638A1 (en) | 2017-04-21 | 2017-11-30 | Optical sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017084462A JP2018182253A (ja) | 2017-04-21 | 2017-04-21 | 光センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018182253A true JP2018182253A (ja) | 2018-11-15 |
Family
ID=63853730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017084462A Pending JP2018182253A (ja) | 2017-04-21 | 2017-04-21 | 光センサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180306638A1 (ja) |
JP (1) | JP2018182253A (ja) |
CN (1) | CN108735852A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10401956B2 (en) * | 2017-05-11 | 2019-09-03 | Microsoft Technology Licensing, Llc | Infrared eye-tracking in high ambient light conditions |
DE102018100946A1 (de) * | 2018-01-17 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Bauteil und verfahren zur herstellung eines bauteils |
JP7072486B2 (ja) * | 2018-10-29 | 2022-05-20 | 京セラ株式会社 | 近接センサ用パッケージ、近接センサ装置および電子モジュール |
CN109904276B (zh) * | 2019-01-31 | 2021-01-26 | 中国科学院长春光学精密机械与物理研究所 | 一种GaN基垂直集成光电子芯片及其制备方法 |
WO2020239538A1 (en) * | 2019-05-29 | 2020-12-03 | Ams International Ag | Reducing optical cross-talk in optical sensor modules |
WO2021100356A1 (ja) * | 2019-11-18 | 2021-05-27 | 株式会社村田製作所 | 光センサ |
US11076764B1 (en) * | 2020-08-24 | 2021-08-03 | Press-IR Inc. | Pressure sensitive mat system with dynamically calibratable pressure sensors and method for non-obtrusive monitoring of vital signs and other health metrics |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587421A (en) * | 1984-04-19 | 1986-05-06 | Hei, Inc. | Photo-optic transducing head assembly |
US5546489A (en) * | 1993-08-02 | 1996-08-13 | Sumitomo Electric Industries, Ltd. | Optical link apparatus |
US5792053A (en) * | 1997-03-17 | 1998-08-11 | Polartechnics, Limited | Hybrid probe for tissue type recognition |
US6343171B1 (en) * | 1998-10-09 | 2002-01-29 | Fujitsu Limited | Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making |
JP4246855B2 (ja) * | 1999-07-06 | 2009-04-02 | シチズン電子株式会社 | 反射型光センサとその製造方法 |
JP2001168376A (ja) * | 1999-12-03 | 2001-06-22 | Matsushita Electronics Industry Corp | 赤外線データ通信モジュール |
JP2004179246A (ja) * | 2002-11-25 | 2004-06-24 | Sharp Corp | 面実装型光空間伝送デバイス |
US7268368B1 (en) * | 2003-08-29 | 2007-09-11 | Standard Microsystems Corporation | Semiconductor package having optical receptacles and light transmissive/opaque portions and method of making same |
JP4801339B2 (ja) * | 2004-10-06 | 2011-10-26 | シチズン電子株式会社 | 光通信モジュール |
US8461513B2 (en) * | 2010-09-28 | 2013-06-11 | Texas Advanced Optoelectronic Solutions, Inc. | Method and apparatus for device with minimized optical cross-talk |
US9018645B2 (en) * | 2013-08-29 | 2015-04-28 | Stmicroelectronics Pte Ltd | Optoelectronics assembly and method of making optoelectronics assembly |
US10061057B2 (en) * | 2015-08-21 | 2018-08-28 | Stmicroelectronics (Research & Development) Limited | Molded range and proximity sensor with optical resin lens |
-
2017
- 2017-04-21 JP JP2017084462A patent/JP2018182253A/ja active Pending
- 2017-11-30 US US15/826,749 patent/US20180306638A1/en not_active Abandoned
- 2017-11-30 CN CN201711237185.8A patent/CN108735852A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN108735852A (zh) | 2018-11-02 |
US20180306638A1 (en) | 2018-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2018182253A (ja) | 光センサ | |
TWI398969B (zh) | Light receiving device | |
KR101476994B1 (ko) | 광학 근조도 센서 및 그 제조방법 | |
US20150190079A1 (en) | Biological sensor and method for manufacturing biological sensor | |
JP2016181584A (ja) | 光モジュール | |
WO2017104635A1 (ja) | 光学装置 | |
CN112168146B (zh) | 测量传感器用封装体以及测量传感器 | |
JP6659377B2 (ja) | 計測センサ用パッケージおよび計測センサ | |
JP4828103B2 (ja) | 光送受信モジュール | |
US20200315474A1 (en) | Biosignal sensor | |
JP2011221281A (ja) | 光電気変換モジュール用部品及び光電気変換モジュール | |
JP6163026B2 (ja) | 光学装置 | |
JP5834963B2 (ja) | 光モジュール | |
JP2019136442A (ja) | 生体情報測定装置 | |
JP2019170611A (ja) | 受光素子、受光モジュール、光電センサー及び生体情報測定装置 | |
JP4553026B2 (ja) | 光伝送装置 | |
KR102625035B1 (ko) | 감지 장치 | |
KR20170054731A (ko) | 광학 센서 패키지 | |
KR102796056B1 (ko) | 생체 정보 계측 장치 | |
JP2016206382A (ja) | 光電気変換装置、およびそれを用いた信号伝送装置 | |
JP6219212B2 (ja) | 生体計測用プローブ及び生体計測装置 | |
JP2019136441A (ja) | 生体情報検出センサー及び生体情報測定装置 | |
JP2019175963A (ja) | 受光素子、受光モジュール、光電センサー及び生体情報測定装置 | |
CN215871975U (zh) | 光电装置及电子设备 | |
JP5234058B2 (ja) | 光送受信モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181009 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191008 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191205 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200212 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200804 |