JP2018101710A - Electronic module and electronic module system - Google Patents
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Abstract
【課題】接続部の数を増やすことなく、電子素子からの発熱を迅速かつ確実に検知できる電子モジュール及び電子モジュールシステムを提供する。
【解決手段】電子モジュールは、接続部７０と、前記接続部７０に接続された第一温度検知部１１と、前記第一温度検知部１１と直列又は並列に接続された第二温度検知部１２と、複数の電子素子５０と、を有する。前記第一温度検知部１１は第一電子素子群に含まれる前記電子素子５０の温度を検知するために用いられ、前記第二温度検知部１２は前記第一電子素子群とは異なる第二電子素子群に含まれる前記電子素子５０の温度を検知するために用いられる。
【選択図】図１An electronic module and an electronic module system are provided that can quickly and reliably detect heat generation from an electronic element without increasing the number of connecting portions.
An electronic module includes a connection unit, a first temperature detection unit connected to the connection unit, and a second temperature detection unit connected in series or in parallel with the first temperature detection unit. And a plurality of electronic elements 50. The first temperature detection unit 11 is used to detect the temperature of the electronic element 50 included in the first electronic element group, and the second temperature detection unit 12 is a second electron different from the first electronic element group. It is used to detect the temperature of the electronic element 50 included in the element group.
[Selection] Figure 1
Description
本発明は、電子モジュール及び電子モジュールシステムに関する。 The present invention relates to an electronic module and an electronic module system.
複数の電子素子を封止部内に有する電子モジュールが知られている。電子素子の一例としては半導体素子を挙げることができ、電子モジュールの一例としては半導体モジュールを挙げることができる。半導体モジュールとしては、基板と、基板上に設けられた複数の半導体素子と、半導体素子を覆う封止部と、を有するものが知られている（例えば、特許文献１参照）。 An electronic module having a plurality of electronic elements in a sealing portion is known. An example of the electronic element is a semiconductor element, and an example of the electronic module is a semiconductor module. As a semiconductor module, one having a substrate, a plurality of semiconductor elements provided on the substrate, and a sealing portion that covers the semiconductor elements is known (for example, see Patent Document 1).
半導体素子等の電子素子の温度を検知するために、温度検知部を封止部内に設けることが考えられる。実装面積の制約から利用できるコネクタ等の接続部の端子数が限られるので、封止部内に一つの温度検知部を設け、電子素子等の配置の邪魔にならないよう端部近辺に温度検知部を設けられることが考えられる。しかしながら、一つの温度検知部では、当該温度検知部からの距離が遠い電子素子における発熱異常を迅速かつ確実に検知できない可能性がある。とりわけ、複数ある電子素子のうちのいずれの電子素子で不具合が発生するか予想できない場合には、温度検知部を適切な位置に予め配置することが難しい。また、利用できる接続部の数が設計上決まっていることが多い。 In order to detect the temperature of an electronic element such as a semiconductor element, it is conceivable to provide a temperature detection part in the sealing part. Since the number of terminals of connectors such as connectors that can be used is limited due to restrictions on the mounting area, a single temperature detector is provided in the sealing part, and a temperature detector is provided in the vicinity of the end so as not to interfere with the arrangement of electronic elements, etc. It may be provided. However, with one temperature detection unit, there is a possibility that a heat generation abnormality in an electronic element that is far from the temperature detection unit cannot be detected quickly and reliably. In particular, when it is impossible to predict which of the plurality of electronic elements will cause a failure, it is difficult to place the temperature detection unit in an appropriate position in advance. Also, the number of connections that can be used is often determined by design.
このような点に鑑み、本発明は、接続部の数を増やすことなく、電子素子における発熱異常を迅速かつ確実に検知できる電子モジュール及び電子モジュールシステムを提供する。 In view of such a point, the present invention provides an electronic module and an electronic module system capable of detecting a heat generation abnormality in an electronic element quickly and reliably without increasing the number of connecting portions.
本発明による電子モジュールの一態様は、
接続部と、
前記接続部に接続された第一温度検知部と、
前記第一温度検知部と直列又は並列に接続された第二温度検知部と、
複数の電子素子と、
を備え、
前記第一温度検知部は第一電子素子群に含まれる前記電子素子の温度を検知するために用いられ、前記第二温度検知部は前記第一電子素子群とは異なる第二電子素子群に含まれる前記電子素子の温度を検知するために用いられてもよい。
One aspect of the electronic module according to the present invention is:
A connection,
A first temperature detection unit connected to the connection unit;
A second temperature detection unit connected in series or in parallel with the first temperature detection unit;
A plurality of electronic elements;
With
The first temperature detection unit is used to detect the temperature of the electronic elements included in the first electronic element group, and the second temperature detection unit is a second electronic element group different from the first electronic element group. It may be used to detect the temperature of the included electronic element.
本発明による電子モジュールの一態様において、
乗り物のモータで用いられてもよい。
In one aspect of the electronic module according to the present invention,
It may be used in a vehicle motor.
本発明による電子モジュールの一態様において、
前記モータは３相モータであり、
前記電子素子は６個以上設けられ、
前記第一電子素子群及び前記第二電子素子群の各々は４個以上の前記電子素子を有し、
前記第一電子素子群に含まれる前記電子素子と前記第二電子素子群に含まれる前記電子素子とは一部で重複してもよい。
In one aspect of the electronic module according to the present invention,
The motor is a three-phase motor;
Six or more electronic elements are provided,
Each of the first electronic element group and the second electronic element group has four or more electronic elements,
The electronic elements included in the first electronic element group and the electronic elements included in the second electronic element group may partially overlap.
本発明による電子モジュールの一態様において、
前記第一電子素子群に含まれる電子素子から前記第一温度検知部までの距離の各々は対応しており、
前記第二電子素子群に含まれる電子素子から前記第二温度検知部までの距離の各々は対応してもよい。
In one aspect of the electronic module according to the present invention,
Each of the distances from the electronic elements included in the first electronic element group to the first temperature detection unit corresponds,
Each of the distances from the electronic elements included in the second electronic element group to the second temperature detection unit may correspond.
本発明による電子モジュールの一態様において、
前記第一電子素子群に含まれる電子素子から前記第一温度検知部までの距離の平均値と、前記第二電子素子群に含まれる電子素子から前記第二温度検知部までの距離の平均値とは対応する値になっていてもよい。
In one aspect of the electronic module according to the present invention,
The average value of the distance from the electronic element included in the first electronic element group to the first temperature detection unit, and the average value of the distance from the electronic element included in the second electronic element group to the second temperature detection unit May be a corresponding value.
本発明による電子モジュールの一態様において、
前記第一温度検知部と前記第二温度検知部は異なる種類の温度検知装置であってもよい。
In one aspect of the electronic module according to the present invention,
The first temperature detection unit and the second temperature detection unit may be different types of temperature detection devices.
本発明による電子モジュールシステムの一態様は、
前述したいずれかの電子モジュールと、
前記第一温度検知部又は前記第二温度検知部からの検知結果に基づき異常を判断する判断部と、
を備えてもよい。
One aspect of the electronic module system according to the present invention is:
One of the electronic modules mentioned above,
A determination unit that determines abnormality based on a detection result from the first temperature detection unit or the second temperature detection unit;
May be provided.
本発明では、接続部に接続された第一温度検知部と、この第一温度検知部と直列又は並列に接続された第二温度検知部が設けられており、第一温度検知部は第一電子素子群の温度を検知するために用いられ、第二温度検知部は第一電子素子群とは異なる電子素子を含む第二電子素子群の温度を検知するために用いられる。このため、接続部の数を増やすことなく、いずれの電子素子で発熱異常が発生しても当該発熱異常を迅速かつ確実に検知できる。 In this invention, the 1st temperature detection part connected to the connection part and the 2nd temperature detection part connected in series or in parallel with this 1st temperature detection part are provided, and the 1st temperature detection part is 1st. The second temperature detection unit is used to detect the temperature of the second electronic element group including an electronic element different from the first electronic element group. For this reason, even if a heat generation abnormality occurs in any electronic element, the heat generation abnormality can be detected quickly and reliably without increasing the number of connection portions.
第１の実施の形態
《構成》
First Embodiment << Configuration >>
図１及び図２に示すように、本実施の形態の電子モジュールは、基板８０と、基板８０を覆うようにして設けられた封止部９０（図３参照）と、基板８０上であって封止部９０内に設けられた複数の電子素子５０と、封止部９０内に設けられ、端子７１を有する接続部７０と、基板８０上に設けられ、接続部７０に接続された第一温度検知部１１と、基板８０上に設けられ、第一温度検知部１１と直列又は並列に接続された第二温度検知部１２と、を有してもよい。接続部７０は電子素子５０とも接続されており、接続部７０を介しえ電子素子５０に電力が供給されるようになってもよい。電子素子５０の一例として半導体素子を挙げることができ、電子モジュールの一例として半導体モジュールを挙げることができる。接続部７０は複数設けられてもよいが、一つだけしか設けられていなくてもよい。本実施の形態では、以下主に、一つの接続部７０だけが用いられている態様を用いて説明する。また、本実施の形態において「温度検知部１０」とは、第一温度検知部１１、第二温度検知部１２、又は、第一温度検知部１１及び第二温度検知部１２の両方を意味している。 As shown in FIGS. 1 and 2, the electronic module of the present embodiment includes a substrate 80, a sealing portion 90 (see FIG. 3) provided so as to cover the substrate 80, and the substrate 80. A plurality of electronic elements 50 provided in the sealing part 90, a connection part 70 provided in the sealing part 90 and having a terminal 71, and a first part provided on the substrate 80 and connected to the connection part 70 You may have the temperature detection part 11 and the 2nd temperature detection part 12 provided on the board | substrate 80 and connected to the 1st temperature detection part 11 in series or in parallel. The connection unit 70 is also connected to the electronic element 50, and power may be supplied to the electronic element 50 through the connection unit 70. A semiconductor element can be given as an example of the electronic element 50, and a semiconductor module can be given as an example of the electronic module. A plurality of connection units 70 may be provided, but only one connection unit 70 may be provided. In the present embodiment, the following description will be given mainly using an aspect in which only one connection unit 70 is used. In the present embodiment, the “temperature detection unit 10” means the first temperature detection unit 11, the second temperature detection unit 12, or both the first temperature detection unit 11 and the second temperature detection unit 12. ing.
図１に示す態様では、第一温度検知部１１と第二温度検知部１２が直列で接続され、図２に示す態様では、第一温度検知部１１と第二温度検知部１２が並列で接続されている。図１及び図２では、第一温度検知部１１、第二温度検知部１２及び接続部７０の端子７１を接続した配線４０を示しているが、その他の図面では、配線を省略している。 In the embodiment shown in FIG. 1, the first temperature detector 11 and the second temperature detector 12 are connected in series. In the embodiment shown in FIG. 2, the first temperature detector 11 and the second temperature detector 12 are connected in parallel. Has been. 1 and 2 show the wiring 40 to which the first temperature detection unit 11, the second temperature detection unit 12, and the terminal 71 of the connection unit 70 are connected, but the wiring is omitted in the other drawings.
第一温度検知部１１は第一電子素子群に含まれる電子素子５０の温度を検知するために用いられ、第二温度検知部１２は第一電子素子群とは異なる第二電子素子群に含まれる電子素子５０の温度を検知するために用いられてもよい（図４参照）。第一温度検知部１１によって第二電子素子群に含まれる電子素子５０の温度を検知することも可能ではあるが、電子素子５０との距離の関係から、第一温度検知部１１が第一電子素子群に含まれる電子素子５０の温度を検知することが想定されている。同様に、第二温度検知部１２によって第一電子素子群に含まれる電子素子５０の温度を検知することも可能ではあるが、電子素子５０との距離の関係から、第二温度検知部１２が第二電子素子群に含まれる電子素子５０の温度を検知することが想定されている。 The first temperature detector 11 is used to detect the temperature of the electronic element 50 included in the first electronic element group, and the second temperature detector 12 is included in a second electronic element group different from the first electronic element group. It may be used to detect the temperature of the electronic device 50 (see FIG. 4). Although it is possible to detect the temperature of the electronic element 50 included in the second electronic element group by the first temperature detecting unit 11, the first temperature detecting unit 11 is connected to the first electron from the relationship with the distance from the electronic element 50. It is assumed that the temperature of the electronic element 50 included in the element group is detected. Similarly, although it is possible to detect the temperature of the electronic element 50 included in the first electronic element group by the second temperature detection unit 12, the second temperature detection unit 12 is determined based on the distance from the electronic element 50. It is assumed that the temperature of the electronic element 50 included in the second electronic element group is detected.
温度検知部１０としては、例えばサーミスタ、ダイオード等を用いてもよい。温度検知部１０としてサーミスタが用いられる場合には、サーミスタにおける抵抗値の変化による電流又は電圧の変化に基づき、電子素子５０に温度に関する異常（発熱異常）が発生したことを検知できるようになってもよい。サーミスタとしては、温度が上がった場合になだらかに抵抗値が高くなるものを用いてもよいし、温度が上がった場合になだらかに抵抗値が低くなるものを用いてもよい。また、このような態様に限られることはなく、サーミスタとしては、閾値温度まではほぼ一定の抵抗値であり、閾値温度を超えた場合に急激に抵抗値が高くなるもの又は急激に抵抗値が低くなるものを用いてもよい。このように急激に抵抗値が高くなる又は急激に抵抗値が低くなるサーミスタを採用することで、発熱異常を効率よく検知することができる点で有益である。なお、温度検知部１０としてダイオードを用いる場合には、温度検知部１０同士（例えば第一温度検知部１１と第二温度検知部１２）は直列で接続されることになる。 As the temperature detector 10, for example, a thermistor, a diode, or the like may be used. When a thermistor is used as the temperature detection unit 10, it is possible to detect that an abnormality relating to temperature (heat generation abnormality) has occurred in the electronic element 50 based on a change in current or voltage due to a change in resistance value in the thermistor. Also good. As the thermistor, a thermistor whose resistance value increases gradually when the temperature rises may be used, or a thermistor whose resistance value decreases gradually when the temperature rises may be used. The thermistor is not limited to such a mode, and the thermistor has a substantially constant resistance value up to the threshold temperature, and when the threshold temperature is exceeded, the resistance value suddenly increases or the resistance value suddenly increases. You may use what becomes low. By adopting a thermistor whose resistance value suddenly increases or decreases rapidly in this way, it is beneficial in that it can efficiently detect a heat generation abnormality. When a diode is used as the temperature detection unit 10, the temperature detection units 10 (for example, the first temperature detection unit 11 and the second temperature detection unit 12) are connected in series.
第一電子素子群に含まれる電子素子５０は一つでもよいし複数でもよい。第二電子素子群に含まれる電子素子５０も一つでもよいし複数でもよい。第一電子素子群に含まれる電子素子５０の個数と第二電子素子群に含まれる電子素子５０の個数は同じでもよいし異なってもよい。なお、電子素子５０の各々がＭＯＳＦＥＴ及びダイオードを含むトランジスタを構成してもよい。また、このような態様に限られることはなく、複数の電子素子部から電子素子５０が構成されてもよく、一例としては、電子素子５０は２つ以上の電子素子部を有してもよい。この場合には、電子素子部の各々がＭＯＳＦＥＴ及びダイオードを含むトランジスタを構成してもよい。 There may be one or more electronic elements 50 included in the first electronic element group. One or more electronic elements 50 may be included in the second electronic element group. The number of electronic elements 50 included in the first electronic element group and the number of electronic elements 50 included in the second electronic element group may be the same or different. Note that each of the electronic elements 50 may constitute a transistor including a MOSFET and a diode. In addition, the electronic element 50 may be configured from a plurality of electronic element units, and as an example, the electronic element 50 may include two or more electronic element units. . In this case, each of the electronic element units may constitute a transistor including a MOSFET and a diode.
本実施の形態の電子モジュールは、自動車等の乗り物のモータで用いられてもよい。モータは３相モータであってもよい。また、電子素子５０は６個以上設けられてもよい。第一電子素子群及び第二電子素子群の各々は４個以上の電子素子５０を有してもよい。第一電子素子群に含まれる電子素子５０と第二電子素子群に含まれる電子素子５０とは一部で重複してもよい。図４に示す態様では、第一電子素子群に４個の電子素子５０が含まれ、第二電子素子群に４個の電子素子５０が含まれている。そして、中心に位置する２個の電子素子５０は、第一電子素子群及び第二電子素子群の各々に含まれている。 The electronic module of the present embodiment may be used in a motor of a vehicle such as an automobile. The motor may be a three-phase motor. Further, six or more electronic elements 50 may be provided. Each of the first electronic element group and the second electronic element group may include four or more electronic elements 50. The electronic element 50 included in the first electronic element group and the electronic element 50 included in the second electronic element group may partially overlap. In the embodiment shown in FIG. 4, four electronic elements 50 are included in the first electronic element group, and four electronic elements 50 are included in the second electronic element group. The two electronic elements 50 located in the center are included in each of the first electronic element group and the second electronic element group.
第一電子素子群に含まれる電子素子５０から第一温度検知部１１までの距離の各々は対応し、第二電子素子群に含まれる電子素子５０から第二温度検知部１２までの距離の各々は対応してもよい。本実施の形態において「距離が対応する」とは、平均距離からの差分が１０％以内となっていることを意味し、平均距離をＬ0とした場合に、温度検知部１０から電子素子５０までの距離Ｌが０．９Ｌ0≦Ｌ≦１．１Ｌ0となることを意味する。したがって、第一電子素子群に含まれる電子素子５０から第一温度検知部１１までの距離の各々が対応している場合には、第一電子素子群に含まれる電子素子５０から第一温度検知部１１までの距離の平均距離をＬ01とした場合に、第一電子素子群に含まれる電子素子５０から第一温度検知部１１までの距離のいずれもが０．９Ｌ01以上１．１Ｌ01以下となっていることを意味する。同様に、第二電子素子群に含まれる電子素子５０から第二温度検知部１２までの距離の各々が対応している場合には、第二電子素子群に含まれる電子素子５０から第二温度検知部１１までの距離の平均距離をＬ02とした場合に、第二電子素子群に含まれる電子素子５０から第二温度検知部１２までの距離のいずれもが０．９Ｌ02以上１．１Ｌ02以下となっていることを意味する。なお、本実施の形態で「距離」とは、中心位置を結んだ距離を意味する。電子素子５０と第一温度検知部１１との間の距離は、電子素子５０の中心と第一温度検知部１１の中心とを結んだときの距離であり、電子素子５０と第二温度検知部１２との間の距離は、電子素子５０の中心と第二温度検知部１２の中心とを結んだときの距離である。 Each distance from the electronic element 50 included in the first electronic element group to the first temperature detection unit 11 corresponds to each of the distances from the electronic element 50 included in the second electronic element group to the second temperature detection unit 12. May correspond. In the present embodiment, “distance corresponds” means that the difference from the average distance is within 10%. When the average distance is L 0 , the temperature detector 10 to the electronic element 50 This means that the distance L is 0.9L 0 ≦ L ≦ 1.1L 0 . Therefore, when each of the distances from the electronic element 50 included in the first electronic element group to the first temperature detecting unit 11 corresponds, the first temperature detection is performed from the electronic element 50 included in the first electronic element group. the average distance of the distance part 11 in the case of the L 01, none of the distance from the electronic device 50 included in the first electronic element group to the first temperature sensing unit 11 is 0.9 L 01 or more 1.1 L 01 Means that: Similarly, when each of the distances from the electronic element 50 included in the second electronic element group to the second temperature detection unit 12 corresponds, the electronic element 50 included in the second electronic element group corresponds to the second temperature. When the average distance to the detection unit 11 is L 02 , any of the distances from the electronic elements 50 included in the second electronic element group to the second temperature detection unit 12 is 0.9L 02 or more and 1.1L. It means that it is less than 02 . In the present embodiment, “distance” means a distance connecting the center positions. The distance between the electronic element 50 and the first temperature detection unit 11 is a distance when the center of the electronic element 50 and the center of the first temperature detection unit 11 are connected, and the electronic element 50 and the second temperature detection unit. 12 is a distance when the center of the electronic element 50 and the center of the second temperature detector 12 are connected.
第一電子素子群に含まれる電子素子５０から第一温度検知部１１までの距離の平均値（平均距離Ｌ01）と、第二電子素子群に含まれる電子素子５０から第二温度検知部１２までの距離の平均値（平均距離Ｌ02）とは対応する値になっていてもよい。この場合には、平均距離Ｌ01と平均距離Ｌ02の各々が、平均距離Ｌ01と平均距離Ｌ02の平均値（平均距離）Ｌa12に対して１０％以内の値（距離）になっていることを意味し、０．９Ｌa12≦Ｌ01≦１．１Ｌa12となり、かつ、０．９Ｌa12≦Ｌ02≦１．１Ｌa12となることを意味する。 The average value (average distance L 01 ) of the distance from the electronic element 50 included in the first electronic element group to the first temperature detecting unit 11 and the electronic element 50 included in the second electronic element group to the second temperature detecting unit 12. The average value of the distance (average distance L 02 ) may be a corresponding value. In this case, each of the average distance L 01 between the average distance L 02, taken to the average value of the average distance L 01 between the average distance L 02 (average distance) value of less than 10% with respect to L a12 (distance) It means that 0.9L a12 ≦ L 01 ≦ 1.1L a12 and 0.9L a12 ≦ L 02 ≦ 1.1L a12 .
第一温度検知部１１と第二温度検知部１２は同じ種類からなる温度検知装置から構成されてもよいが、第一温度検知部１１と第二温度検知部１２は異なる種類の温度検知装置から構成されてもよい。一例としては、第一温度検知部１１及び第二温度検知部１２の一方は、第一閾値温度まではほぼ一定の抵抗値であり、第一閾値温度を超えた場合に急激又はなだらかに抵抗値が高くなるサーミスタであり、第一温度検知部１１及び第二温度検知部１２の他方は、第二閾値温度まではほぼ一定の抵抗値であり、第二閾値温度を超えた場合に急激又はなだらかに抵抗値が低くなるサーミスタであってもよい。別の例としては、第一温度検知部１１及び第二温度検知部１２の一方は、温度が高くなるにつれてなだらかに抵抗値が高くなるサーミスタであり、第一温度検知部１１及び第二温度検知部１２の他方は、温度が高くなるにつれてなだらかに抵抗値が低くなるサーミスタであってもよい。さらに別の例としては、第一温度検知部１１で発熱異常が検知された場合に発信される信号の大きさ、信号の発信の仕方、信号の波形等のいずれかの要素が、第二温度検知部１２で発熱異常が検知された場合に発信される信号の大きさ、信号の発信の仕方、信号の波形等のいずれかの要素と異なっていてもよい。 The first temperature detection unit 11 and the second temperature detection unit 12 may be configured from the same type of temperature detection device, but the first temperature detection unit 11 and the second temperature detection unit 12 are from different types of temperature detection devices. It may be configured. As an example, one of the first temperature detection unit 11 and the second temperature detection unit 12 has a substantially constant resistance value up to the first threshold temperature, and suddenly or gently increases when the first threshold temperature is exceeded. The other of the first temperature detection unit 11 and the second temperature detection unit 12 has a substantially constant resistance value up to the second threshold temperature, and suddenly or gently when the second threshold temperature is exceeded. Alternatively, a thermistor having a low resistance value may be used. As another example, one of the first temperature detection unit 11 and the second temperature detection unit 12 is a thermistor that gradually increases in resistance value as the temperature increases, and the first temperature detection unit 11 and the second temperature detection unit. The other part 12 may be a thermistor whose resistance value gradually decreases as the temperature increases. As yet another example, any element such as the magnitude of the signal transmitted when the first temperature detection unit 11 detects a heat generation abnormality, the signal transmission method, the signal waveform, etc. The detection unit 12 may be different from any element such as a magnitude of a signal transmitted when a heat generation abnormality is detected, a signal transmission method, a signal waveform, and the like.
図３に示すように、本実施の形態の電子モジュールは、第一温度検知部１１又は第二温度検知部１２からの検知結果に基づき異常を判断する判断部１１０に接続されてもよい。第一温度検知部１１と第二温度検知部１２は異なる種類の温度検知装置から構成されている態様を採用した場合には、判断部１１０は、第一温度検知部１１と第二温度検知部１２のいずれが異常を検知したかも判断するようにしてもよい。判断部１１０としては、例えば、電流値及び電圧値とを測定して抵抗の値を測定する抵抗測定装置を用いることができる。そして、抵抗値が急激又はなだらかに抵抗値が高くなった場合には、第一温度検知部１１及び第二温度検知部１２の一方（例えば第一温度検知部１１）で発熱異常を検知したと判断し、抵抗値が急激又はなだらかに抵抗値が低くなった場合には、第一温度検知部１１及び第二温度検知部１２の他方（例えば第二温度検知部１２）で発熱異常を検知したと判断してもよい。 As shown in FIG. 3, the electronic module of the present embodiment may be connected to a determination unit 110 that determines an abnormality based on a detection result from the first temperature detection unit 11 or the second temperature detection unit 12. In the case where the first temperature detection unit 11 and the second temperature detection unit 12 employ an aspect in which different types of temperature detection devices are configured, the determination unit 110 includes the first temperature detection unit 11 and the second temperature detection unit. It may be determined which of 12 has detected an abnormality. As the determination unit 110, for example, a resistance measuring device that measures a resistance value by measuring a current value and a voltage value can be used. When the resistance value suddenly or gently increases, one of the first temperature detection unit 11 and the second temperature detection unit 12 (for example, the first temperature detection unit 11) detects a heat generation abnormality. When the resistance value is suddenly or gently decreased, an abnormality in heat generation is detected by the other of the first temperature detection unit 11 and the second temperature detection unit 12 (for example, the second temperature detection unit 12). You may judge.
本実施の形態の電子モジュールシステムは、電子モジュール及び判断部１１０を有してもよい。また、本実施の形態の電子モジュールシステムは、自動車等で利用される３相モータ等のモータを駆動するために用いられる電源装置に利用されてもよい。 The electronic module system according to the present embodiment may include an electronic module and determination unit 110. Moreover, the electronic module system of this Embodiment may be utilized for the power supply device used in order to drive motors, such as a three-phase motor utilized in a motor vehicle etc.
《作用・効果》
次に、上述した構成からなる本実施の形態におる作用・効果であって、未だ説明していない作用・効果について説明する。なお、「作用・効果」で説明した構成も、適宜採用することができる。
《Action ・ Effect》
Next, operations and effects in the present embodiment having the above-described configuration, which have not yet been described, will be described. The configuration described in “Operation / Effect” can also be adopted as appropriate.
本実施の形態において、接続部７０に接続された第一温度検知部１１と、この第一温度検知部１１と直列又は並列に接続された第二温度検知部１２が設けられており、第一温度検知部１１は第一電子素子群の温度を検知するために用いられ、第二温度検知部１２は第一電子素子群とは異なる電子素子５０を含む第二電子素子群の温度を検知するために用いられる態様を採用した場合には、接続部７０の数、また接続部７０に含まれる端子７１の数を増やすことなく、いずれの電子素子５０で発熱異常が発生しても当該発熱異常を迅速かつ確実に検知できる。 In the present embodiment, a first temperature detection unit 11 connected to the connection unit 70 and a second temperature detection unit 12 connected in series or in parallel with the first temperature detection unit 11 are provided. The temperature detection unit 11 is used to detect the temperature of the first electronic element group, and the second temperature detection unit 12 detects the temperature of the second electronic element group including the electronic element 50 different from the first electronic element group. In the case of adopting the mode used for this purpose, any heat generation abnormality occurs in any electronic element 50 without increasing the number of connection portions 70 and the number of terminals 71 included in the connection portion 70. Can be detected quickly and reliably.
また、このような態様を採用することで、コネクタ等の接続部７０に含まれる接続ピン等の端子７１が限られている場合であっても、少ない数（例えば２つ）の端子７１を用いて、複数の電子素子群における電子素子５０の発熱に関する異常を効率よく検知することができる。 Further, by adopting such an aspect, even when the number of terminals 71 such as connection pins included in the connection portion 70 such as a connector is limited, a small number (for example, two) of terminals 71 are used. Thus, an abnormality related to heat generation of the electronic element 50 in the plurality of electronic element groups can be detected efficiently.
このように限られた数の端子７１しか利用しないことから、温度検知部１０のために接続部７０を別途設ける必要がなく、例えば一つの接続部７０だけを利用する態様を採用することができる。この結果、従前と比較して、電子モジュールの大きさを大きくすることなく、複数の電子素子群における電子素子５０の発熱に関する異常を効率よく検知することができる。 Since only a limited number of terminals 71 are used in this way, it is not necessary to separately provide the connection unit 70 for the temperature detection unit 10, and for example, a mode using only one connection unit 70 can be employed. . As a result, it is possible to efficiently detect an abnormality related to heat generation of the electronic element 50 in the plurality of electronic element groups without increasing the size of the electronic module as compared with the conventional case.
封止部９０で封止された場合、特に熱伝導性の低い封止部９０で封止された場合には、電子素子５０で発熱異常が発生しても熱の広がり遅くなり、その結果として温度検知部１０による発熱異常の検知が遅くなることがある。この点、本実施の形態のように複数の温度検知部１０を利用することで封止部９０（特に熱伝導性の低い封止部９０）に封止された態様であっても、より迅速に発熱異常を検知することができる。 When sealed with the sealing part 90, particularly when sealed with the sealing part 90 with low thermal conductivity, even if heat generation abnormality occurs in the electronic element 50, the heat spread becomes slow, and as a result The detection of the heat generation abnormality by the temperature detection unit 10 may be delayed. In this respect, even in a mode in which the plurality of temperature detection units 10 are used to seal the sealing unit 90 (particularly, the sealing unit 90 having low thermal conductivity) as in the present embodiment, it is quicker. It is possible to detect abnormal heat generation.
本実施の形態の電子モジュールが自動車等の乗り物のモータで用いられる場合には、より有益である。自動車等の乗り物が脱輪したり異物に乗り上げたりした場合には、モータが回転しないモータロックの状態になることがある。このようにモータロックが生じた場合には、モータ等に用いられる電子モジュールの電子素子５０の発熱が大きくなってしまうことがある。モータロックがかかる位置は定まっていないことから、複数の電子素子５０のうちのいずれの電子素子５０の発熱が大きくなるかは予想できず、仮に温度検知部１０を設けるとしても、どの位置に設けることが良いかは判断が難しい。この点、本実施の形態のように、第一温度検知部１１が第一電子素子群に含まれる電子素子５０の温度を検知するために用いられ、第二温度検知部１２が第二電子素子群に含まれる電子素子５０の温度を検知するために用いられることで、いずれの電子素子５０に関して発熱等の熱に関する異常が発生しても、当該異常を素早く検知することができる点で有益である。 This is more beneficial when the electronic module of the present embodiment is used in a motor of a vehicle such as an automobile. When a vehicle such as an automobile derails or gets on a foreign object, there may be a motor lock state in which the motor does not rotate. When the motor lock occurs in this way, the heat generation of the electronic element 50 of the electronic module used for the motor or the like may increase. Since the position where the motor lock is applied is not fixed, it cannot be predicted which of the plurality of electronic elements 50 will generate a large amount of heat, and even if the temperature detection unit 10 is provided, it is provided at any position. It is difficult to judge whether things are good. In this regard, as in the present embodiment, the first temperature detection unit 11 is used to detect the temperature of the electronic element 50 included in the first electronic element group, and the second temperature detection unit 12 is used as the second electronic element. By being used to detect the temperature of the electronic elements 50 included in the group, it is beneficial in that any abnormality related to heat such as heat generation occurs in any electronic element 50 can be detected quickly. is there.
なお、仮に一つの温度検知部１０しか用いない場合には、当該温度検知部１０で発熱異常を検知しようとしても、電子素子５０からの距離が遠い場合には、当該発熱異常を検知できないか、または検知できたとしても当該検知までにかなり時間がかかってしまうことが考えられる。 If only one temperature detection unit 10 is used, even if an attempt is made to detect a heat generation abnormality with the temperature detection unit 10, if the distance from the electronic element 50 is far, the heat generation abnormality cannot be detected. Or even if it can be detected, it may take a considerable amount of time to detect.
電子モジュールが３相モータに利用される場合には、各相に対して２個以上の電子素子５０が用いられ、合計６個以上の電子素子５０が用いられることが想定される。この場合には、発熱しうる電子素子５０の数が多くなることに加え、電子モジュールの大きさがある程度大きくなってしまう。このため、本実施の形態のように、利用する端子７１の数を増やすことなく、複数の温度検知部１０によって電子素子５０の発熱異常を検知できることは有益なものとなる。 When the electronic module is used for a three-phase motor, it is assumed that two or more electronic elements 50 are used for each phase, and a total of six or more electronic elements 50 are used. In this case, in addition to an increase in the number of electronic elements 50 that can generate heat, the size of the electronic module increases to some extent. For this reason, as in the present embodiment, it is useful to be able to detect the heat generation abnormality of the electronic element 50 by the plurality of temperature detection units 10 without increasing the number of terminals 71 to be used.
温度検知部１０の数を増やすことで、電子素子５０の発熱異常の検知する感度を挙げることができるが、他方、温度検知部１０の数を制限する（例えば２つだけとする）ことで、温度検知部１０を導入することによって必要になるコストやスペースを制限することができる点で有益である。 By increasing the number of temperature detection units 10, it is possible to increase the sensitivity of detecting an abnormal heat generation of the electronic element 50. On the other hand, by limiting the number of temperature detection units 10 (for example, only two), The introduction of the temperature detection unit 10 is advantageous in that the cost and space required can be limited.
ある電子素子群に含まれる電子素子５０から対応する温度検知部１０までの距離の各々が対応している態様を採用する場合には、当該電子素子群に含まれる電子素子５０のいずれで発熱異常が発生しても、（電子素子群内に含まれる電子素子５０同士について）同程度の感度で検知することができる点で有益である。 When adopting an aspect in which each of the distances from the electronic element 50 included in a certain electronic element group to the corresponding temperature detecting unit 10 corresponds, any of the electronic elements 50 included in the electronic element group may generate a heat generation abnormality. Even if this occurs, it is advantageous in that it can be detected with the same sensitivity (for the electronic elements 50 included in the electronic element group).
ある電子素子群に含まれる電子素子５０から対応する温度検知部１０までの距離の平均値が、別の電子素子群に含まれる電子素子５０から対応する温度検知部１０までの距離の平均値と対応する値になっている態様を採用する場合には、いずれの電子素子群に含まれる電子素子５０で発熱異常が発生しても、（電子素子群同士について）同程度の感度で検知することができる点で有益である。 The average value of the distance from the electronic element 50 included in a certain electronic element group to the corresponding temperature detector 10 is the average value of the distance from the electronic element 50 included in another electronic element group to the corresponding temperature detector 10. In the case of adopting a mode having a corresponding value, even if a heat generation abnormality occurs in the electronic element 50 included in any electronic element group, it is detected with the same sensitivity (for the electronic element groups). It is beneficial in that it can.
ある電子素子群に含まれる電子素子５０を測定するための温度検知部１０と、別の電子素子群に含まれる電子素子５０を測定するための温度検知部１０とが異なる種類の温度検知装置である場合には、どの電子素子群に含まれる電子素子５０に異常が発生したかを検知することができる点で有益である。複数の温度検知部１０の各々が同じ種類の温度検知装置である場合には、どの温度検知部１０によって発熱異常が検知されたかが分からない。このため、あえて異なる種類の温度検知装置を採用することで、どの電子素子群に含まれる電子素子５０に異常が発生したかを判断しやすくできる。 A temperature detecting device of a type in which a temperature detecting unit 10 for measuring an electronic element 50 included in a certain electronic element group and a temperature detecting unit 10 for measuring an electronic element 50 included in another electronic element group are different. In some cases, it is advantageous in that it is possible to detect which abnormality has occurred in the electronic element 50 included in which electronic element group. When each of the plurality of temperature detection units 10 is the same type of temperature detection device, it is not known which temperature detection unit 10 has detected the heat generation abnormality. For this reason, it is possible to easily determine which electronic element 50 included in which electronic element group has an abnormality by adopting a different type of temperature detection device.
一例として、第一温度検知部１１と第二温度検知部１２の２つの温度検知部１０しか用いられていない場合には、各温度検知部１０で異常を検知した際の挙動が異なることから、第一電子素子群と第二電子素子群のいずれで異常を検知したかを特定することができる。例えば、第一温度検知部１１及び第二温度検知部１２の一方に、第一閾値温度まではほぼ一定の抵抗値であり、第一閾値温度を超えた場合に急激又はなだらかに抵抗値が高くなる（第一閾値を超えた場合に抵抗値の増加割合が大きくなる）サーミスタを採用し、第一温度検知部１１及び第二温度検知部１２の他方に、第二閾値温度まではほぼ一定の抵抗値であり、第二閾値温度を超えた場合に急激又はなだらかに抵抗値が低くなる（第二閾値を超えた場合に抵抗値の減少割合が大きくなる）サーミスタを採用した場合には、抵抗値が急激に高くなったときには第一温度検知部１１及び第二温度検知部１２の一方（例えば第一温度検知部１１）に対応する電子素子群で異常が発生したことを認識でき、抵抗値が急激又はなだらかに低くなったときには第一温度検知部１１及び第二温度検知部１２の他方（例えば第二温度検知部１２）に対応する電子素子群で異常が発生したことを認識できる。 As an example, when only the two temperature detection units 10 of the first temperature detection unit 11 and the second temperature detection unit 12 are used, the behavior when an abnormality is detected in each temperature detection unit 10 is different. It can be specified which one of the first electronic element group and the second electronic element group has detected the abnormality. For example, one of the first temperature detection unit 11 and the second temperature detection unit 12 has a substantially constant resistance value up to the first threshold temperature, and the resistance value increases rapidly or gently when the first threshold temperature is exceeded. Thermistor is adopted (the increase rate of the resistance value increases when the first threshold is exceeded), and the other of the first temperature detection unit 11 and the second temperature detection unit 12 is substantially constant up to the second threshold temperature. When a thermistor is used that has a resistance value and the resistance value suddenly or gently decreases when the second threshold temperature is exceeded (the resistance decrease ratio increases when the second threshold temperature is exceeded) When the value suddenly increases, it can be recognized that an abnormality has occurred in the electronic element group corresponding to one of the first temperature detection unit 11 and the second temperature detection unit 12 (for example, the first temperature detection unit 11), and the resistance value Is suddenly or gently low To recognize that an abnormality in the electronic element group corresponding to the other (e.g., the second temperature detecting section 12) of the first temperature sensing unit 11 and the second temperature detector 12 has occurred.
第２の実施の形態
次に、本発明の第２の実施の形態について説明する。
Second Embodiment Next, a second embodiment of the present invention will be described.
第１の実施の形態の図１乃至図４に示す態様では、第一温度検知部１１及び第二温度検知部１２が用いられている態様を用いて説明したが、第２の実施の形態の図５に示す態様では、第三温度検知部１３も用いられる態様を用いて説明する。本実施の形態における「温度検知部１０」は、第一温度検知部１１、第二温度検知部１２及び第三温度検知部１３のいずれか１つ、いずれか２つ、又は、これらの全てを意味している。 In the mode shown in FIGS. 1 to 4 of the first embodiment, the first temperature detection unit 11 and the second temperature detection unit 12 have been described, but the mode of the second embodiment is described. In the aspect shown in FIG. 5, description will be made using an aspect in which the third temperature detection unit 13 is also used. The “temperature detection unit 10” in the present embodiment is any one of the first temperature detection unit 11, the second temperature detection unit 12 and the third temperature detection unit 13, or any two of them. I mean.
その他の構成は、第１の実施の形態と同様であり、第１の実施の形態で説明したあらゆる構成（変形例）を採用することができる。第２の実施の形態において、第１の実施の形態と同じ又は同様の部材等については同じ符号を付し、その説明を省略する。本実施の形態でも、第１の実施の形態によって実現される効果と同様の効果を得ることができる。 Other configurations are the same as those of the first embodiment, and any configuration (modification) described in the first embodiment can be employed. In the second embodiment, the same or similar members as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted. Also in this embodiment, the same effect as that achieved by the first embodiment can be obtained.
図５に示す態様では、第一温度検知部１１が第一電子素子群に含まれる複数（２つ）の電子素子５０の温度を検知するために用いられ、第二温度検知部１２が第二電子素子群に含まれる複数（２つ）の電子素子５０の温度を検知するために用いられ、第三温度検知部１３が第三電子素子群に含まれる複数（２つ）の電子素子５０の温度を検知するために用いられるようになっている。第一温度検知部１１と第二温度検知部１２は直列又は並列に接続され、第二温度検知部１２と第三温度検知部１３は直列又は並列に接続されてもよい。 In the aspect shown in FIG. 5, the first temperature detection unit 11 is used to detect the temperature of a plurality (two) of electronic elements 50 included in the first electronic element group, and the second temperature detection unit 12 is the second temperature detection unit 12. The third temperature detector 13 is used to detect the temperature of a plurality (two) of electronic elements 50 included in the electronic element group, and the third temperature detecting unit 13 includes a plurality of (two) electronic elements 50 included in the third electronic element group. It is used to detect temperature. The first temperature detection unit 11 and the second temperature detection unit 12 may be connected in series or in parallel, and the second temperature detection unit 12 and the third temperature detection unit 13 may be connected in series or in parallel.
第１の実施の形態と比較して第２の実施の形態では、各温度検知部１０によって温度が検知される電子素子５０の数が少なくなっている。このため、各温度検知部１０と電子素子５０との間の距離を短くすることができるので、電子素子５０の発熱による異常をより迅速に検知することができる。他方、利用される端子７１の数は第１の実施の形態と変わらない。 Compared to the first embodiment, in the second embodiment, the number of electronic elements 50 whose temperature is detected by each temperature detection unit 10 is reduced. For this reason, since the distance between each temperature detection part 10 and the electronic element 50 can be shortened, the abnormality by heat_generation | fever of the electronic element 50 can be detected more rapidly. On the other hand, the number of terminals 71 used is the same as in the first embodiment.
第３の実施の形態
次に、本発明の第３の実施の形態について説明する。
Third Embodiment Next, a third embodiment of the present invention will be described.
第１の実施の形態の図１乃至図４に示す態様では、第一温度検知部１１及び第二温度検知部１２が用いられている態様を用いて説明したが、第３の実施の形態の図６に示す態様では、第三温度検知部１３乃至第六温度検知部１６も用いられる態様を用いて説明する。本実施の形態における「温度検知部１０」は、第１の実施の形態及び第２の実施の形態と同様、第一温度検知部１１乃至第六温度検知部１６のいずれか１つ以上を意味している。 In the aspect shown in FIGS. 1 to 4 of the first embodiment, the first temperature detection unit 11 and the second temperature detection unit 12 have been described. However, in the third embodiment, In the embodiment shown in FIG. 6, the third temperature detector 13 to the sixth temperature detector 16 will be used. The “temperature detection unit 10” in the present embodiment means any one or more of the first temperature detection unit 11 to the sixth temperature detection unit 16 as in the first embodiment and the second embodiment. doing.
その他の構成は、第１の実施の形態と同様であり、第１の実施の形態で説明したあらゆる構成（変形例）を採用することができる。第３の実施の形態において、第１の実施の形態と同じ又は同様の部材等については同じ符号を付し、その説明を省略する。本実施の形態でも、第１の実施の形態によって実現される効果と同様の効果を得ることができる。 Other configurations are the same as those of the first embodiment, and any configuration (modification) described in the first embodiment can be employed. In the third embodiment, members that are the same as or similar to those in the first embodiment are given the same reference numerals, and descriptions thereof are omitted. Also in this embodiment, the same effect as that achieved by the first embodiment can be obtained.
図６に示す態様では、第一温度検知部１１が第一電子素子群に含まれる１つの電子素子５０の温度を検知するために用いられ、第二温度検知部１２が第二電子素子群に含まれる１つの電子素子５０の温度を検知するために用いられ、第三温度検知部１３が第三電子素子群に含まれる１つの電子素子５０の温度を検知するために用いられ、第四温度検知部１４が第四電子素子群に含まれる１つの電子素子５０の温度を検知するために用いられ、第五温度検知部１５が第五電子素子群に含まれる１つの電子素子５０の温度を検知するために用いられ、第六温度検知部１６が第六電子素子群に含まれる１つの電子素子５０の温度を検知するために用いられるようになっている。第一温度検知部１１と第二温度検知部１２は直列又は並列に接続され、第二温度検知部１２と第三温度検知部１３は直列又は並列に接続され、第三温度検知部１３と第四温度検知部１４は直列又は並列に接続され、第四温度検知部１４と第五温度検知部１５は直列又は並列に接続され、第五温度検知部１５と第六温度検知部１６は直列又は並列に接続されてもよい。なお、この配線構成は一例であり、第一温度検知部１１乃至第六温度検知部１６の配線構成は自在に変更することができる。 In the embodiment shown in FIG. 6, the first temperature detection unit 11 is used to detect the temperature of one electronic element 50 included in the first electronic element group, and the second temperature detection unit 12 is used as the second electronic element group. The third temperature detector 13 is used to detect the temperature of one electronic element 50 included in the third electronic element group, and the fourth temperature is used to detect the temperature of one electronic element 50 included. The detection unit 14 is used to detect the temperature of one electronic element 50 included in the fourth electronic element group, and the fifth temperature detection unit 15 determines the temperature of one electronic element 50 included in the fifth electronic element group. The sixth temperature detector 16 is used to detect the temperature of one electronic element 50 included in the sixth electronic element group. The first temperature detection unit 11 and the second temperature detection unit 12 are connected in series or in parallel, the second temperature detection unit 12 and the third temperature detection unit 13 are connected in series or in parallel, and the third temperature detection unit 13 and the third temperature detection unit 13 are connected. The four temperature detectors 14 are connected in series or in parallel, the fourth temperature detector 14 and the fifth temperature detector 15 are connected in series or in parallel, and the fifth temperature detector 15 and the sixth temperature detector 16 are connected in series or You may connect in parallel. This wiring configuration is an example, and the wiring configurations of the first temperature detection unit 11 to the sixth temperature detection unit 16 can be freely changed.
第１の実施の形態及び第２の実施の形態と比較して第３の実施の形態では、各温度検知部１０によって温度が検知される電子素子５０の数が少なくなっている。このため、各温度検知部１０と電子素子５０との間の距離を短くすることができるので、電子素子５０の発熱による異常をより迅速に検知することができる。他方、利用される端子７１の数は第１の実施の形態と変わらない。 Compared with the first embodiment and the second embodiment, in the third embodiment, the number of electronic elements 50 whose temperature is detected by each temperature detection unit 10 is reduced. For this reason, since the distance between each temperature detection part 10 and the electronic element 50 can be shortened, the abnormality by heat_generation | fever of the electronic element 50 can be detected more rapidly. On the other hand, the number of terminals 71 used is the same as in the first embodiment.
以上の各実施の形態で見てきたように、温度検知部１０をｎ（「ｎ」は２以上の整数）個設けてもよい。この場合には、第一温度検知部１１、第二温度検知部１２、・・・、第ｎ温度検知部を設けることになる。この場合でも、各温度検知部１０は隣接する別の温度検知部１０と直列又は並列に接続されてもよい。この結果、利用される端子７１の数を増やすことなく、例えば「２つ」の端子７１だけで、ｎ個の電子素子群に含まれる電子素子５０に関する発熱異常を検知することができる。 As seen in the above embodiments, n (“n” is an integer of 2 or more) temperature detection units 10 may be provided. In this case, the 1st temperature detection part 11, the 2nd temperature detection part 12, ..., the nth temperature detection part will be provided. Even in this case, each temperature detector 10 may be connected in series or in parallel with another adjacent temperature detector 10. As a result, it is possible to detect an abnormality in heat generation related to the electronic elements 50 included in the n electronic element groups, for example, using only “two” terminals 71 without increasing the number of terminals 71 used.
また、第ｍ電子素子群（「ｍ」は「ｎ」以下の整数）に含まれる電子素子５０から第ｍ温度検知部１０までの距離の各々は対応していてもよい。また、第ｍ温度検知部１０と第ｋ温度検知部１０（「ｋ」は「ｎ」以下の整数であり、「ｍ」とは異なる整数）は異なる種類の温度検知装置であってもよい。 Further, each of the distances from the electronic element 50 included in the m-th electronic element group (“m” is an integer equal to or smaller than “n”) to the m-th temperature detection unit 10 may correspond. Further, the m-th temperature detection unit 10 and the k-th temperature detection unit 10 (“k” is an integer equal to or less than “n” and an integer different from “m”) may be different types of temperature detection devices.
念のために述べておくと、第一温度検知部１１及び第二温度検知部１２を備えた発明の技術的範囲には、第三温度検知部１３等の他の温度検知部１０が別途設けられた態様も含まれている。 As a precaution, another temperature detection unit 10 such as the third temperature detection unit 13 is separately provided in the technical scope of the invention including the first temperature detection unit 11 and the second temperature detection unit 12. Included embodiments are also included.
最後になったが、上述した各実施の形態の記載及び図面の開示は、特許請求の範囲に記載された発明を説明するための一例に過ぎず、上述した実施の形態の記載又は図面の開示によって請求の範囲に記載された発明が限定されることはない。また、出願当初の請求項の記載はあくまでも一例であり、明細書、図面等の記載に基づき、請求項の記載を適宜変更することもできる。 Lastly, the description of the embodiments and the disclosure of the drawings described above are merely examples for explaining the invention described in the claims, and the description of the embodiments or the disclosure of the drawings described above is included. The invention described in the scope of claims is not limited by this. The description of the claims at the beginning of the application is merely an example, and the description of the claims can be appropriately changed based on the description, drawings, and the like.
１０ 温度検知部
１１ 第一温度検知部
１２ 第二温度検知部
５０ 電子素子
７０ 接続部
１１０ 判断部
DESCRIPTION OF SYMBOLS 10 Temperature detection part 11 1st temperature detection part 12 2nd temperature detection part 50 Electronic element 70 Connection part 110 Determination part
Claims (7)
前記接続部に接続された第一温度検知部と、
前記第一温度検知部と直列又は並列に接続された第二温度検知部と、
複数の電子素子と、
を備え、
前記第一温度検知部は第一電子素子群に含まれる前記電子素子の温度を検知するために用いられ、前記第二温度検知部は前記第一電子素子群とは異なる第二電子素子群に含まれる前記電子素子の温度を検知するために用いられることを特徴とする電子モジュール。 A connection,
A first temperature detection unit connected to the connection unit;
A second temperature detection unit connected in series or in parallel with the first temperature detection unit;
A plurality of electronic elements;
With
The first temperature detection unit is used to detect the temperature of the electronic elements included in the first electronic element group, and the second temperature detection unit is a second electronic element group different from the first electronic element group. An electronic module which is used for detecting the temperature of the electronic element contained therein.
前記電子素子は６個以上設けられ、
前記第一電子素子群及び前記第二電子素子群の各々は４個以上の前記電子素子を有し、
前記第一電子素子群に含まれる前記電子素子と前記第二電子素子群に含まれる前記電子素子とは一部で重複することを特徴とする請求項２に記載の電子モジュール。 The motor is a three-phase motor;
Six or more electronic elements are provided,
Each of the first electronic element group and the second electronic element group has four or more electronic elements,
The electronic module according to claim 2, wherein the electronic element included in the first electronic element group and the electronic element included in the second electronic element group partially overlap each other.
前記第二電子素子群に含まれる電子素子から前記第二温度検知部までの距離の各々は対応していることを特徴とする請求項１乃至３のいずれか１項に記載の電子モジュール。 Each of the distances from the electronic elements included in the first electronic element group to the first temperature detection unit corresponds,
4. The electronic module according to claim 1, wherein each of the distances from an electronic element included in the second electronic element group to the second temperature detection unit corresponds to the electronic module.
前記第一温度検知部又は前記第二温度検知部からの検知結果に基づき異常を判断する判断部と、
を備えた電子モジュールシステム。 The electronic module according to any one of claims 1 to 6,
A determination unit that determines abnormality based on a detection result from the first temperature detection unit or the second temperature detection unit;
Electronic module system with
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| JPH01286781A (en) * | 1988-05-10 | 1989-11-17 | Fanuc Ltd | Semiconductor module containing heat-sensitive element |
| JP2000324893A (en) * | 1999-05-11 | 2000-11-24 | Mitsubishi Electric Corp | Motor control device |
| JP2012075279A (en) * | 2010-09-29 | 2012-04-12 | Sanyo Electric Co Ltd | Inverter device, and electric vehicle equipped with the same |
| JP2013118783A (en) * | 2011-12-05 | 2013-06-13 | Panasonic Corp | Power converter and power conversion system |
| JP2015208081A (en) * | 2014-04-18 | 2015-11-19 | 日産自動車株式会社 | semiconductor element temperature estimation device |
| JP2016144333A (en) * | 2015-02-03 | 2016-08-08 | 富士電機株式会社 | Phase unit and three-level power converter using the same |
| JP2017017827A (en) * | 2015-06-30 | 2017-01-19 | 株式会社デンソー | Electronic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019009221A1 (en) | 2017-07-04 | 2019-01-10 | 日本曹達株式会社 | Culturing device, carrier, and culture subject collection method |
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