JP2018014480A - Optical semiconductor element with reflective layer and phosphor layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor element with a reflective layer and a phosphor layer, which enables the manufacturing of an optical semiconductor device having good directivity, and front illuminance, and improved in location accuracy.SOLUTION: An optical semiconductor element 1 with a reflective layer and a phosphor layer comprises: an optical semiconductor element 2 having an emission face 21 and an opposite face 22 opposed to and spaced apart from the emission face 21 in an up-and-down direction; a phosphor layer 3 at least covering the emission face 21; and a reflective layer 4 disposed on the optical semiconductor element 2 and the phosphor layer 3 outwardly in a right-left direction and outwardly in a front-back direction. The phosphor layer 3 has: an inside portion 31 disposed on an upper side of the optical semiconductor element 2; and an outside portion 32 disposed on a virtual face 6 extending along the emission face 21 to outside the optical semiconductor element, or disposed so as to include the virtual face 6.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an optical semiconductor element with a reflective layer and a phosphor layer.

  Conventionally, a white light emitting device (white light semiconductor device) is known as a light emitting device capable of emitting high-energy light. The white light emitting device includes, for example, a diode substrate that supplies power to the LED, an LED (light emitting diode) that is mounted thereon and emits blue light, and a phosphor layer that can convert blue light into yellow light and covers the LED And a sealing layer that seals the LED and a reflective layer that is provided around the LED and reflects light forward. Such a white light emitting device has high energy by mixing color of blue light emitted from the LED and transmitted through the sealing layer and the phosphor layer, and yellow light in which part of the blue light is wavelength-converted in the phosphor layer. Of white light.

  In recent years, white light emitting devices with high directivity and good illuminance, such as floodlighting and ceiling lighting, have been demanded. As such a light emitting device, for example, a light emitting device disclosed in Patent Document 1 has been proposed.

  In the light emitting device of Patent Document 1, a phosphor layer formed so that the lower surface has the same shape as the upper surface of the light emitting diode element and the upper surface is wide is disposed on the upper surface (light emitting surface) of the light emitting diode element. The reflective resin layer is disposed on the side surface of the light emitting diode element.

FIG. 7 (e) of JP2012-222315A.

  However, in the light emitting device of Patent Document 1, the phosphor layer has the upper surface of the light emitting diode element and the lower surface of the phosphor layer formed in the same pattern. Therefore, when the phosphor layer is disposed on the upper surface of the light emitting diode element, if the position of the phosphor layer is shifted in the width direction, there is a portion where the phosphor layer is not disposed on the upper surface of the light emitting diode element. There arises a problem that desired optical characteristics cannot be exhibited. For this reason, the light emitting device of Patent Document 1 requires high positional accuracy in the width direction, and improvement thereof is desired.

  An object of the present invention is to provide a reflection layer and an optical semiconductor element with a phosphor layer, which can manufacture an optical semiconductor device having good directivity and front illuminance and improved positional accuracy. .

  The present invention [1] includes an optical semiconductor element having a light emitting surface and an opposing surface arranged to face the light emitting surface at an interval in the vertical direction, a phosphor layer covering at least the light emitting surface, and the light A reflection layer disposed on the outer side in the orthogonal direction perpendicular to the vertical direction with respect to both the semiconductor element and the phosphor layer, and the phosphor layer is an inner portion disposed on the upper side of the optical semiconductor element And a reflecting layer and a phosphor layer-attached optical semiconductor element having an outer portion disposed on or including a virtual surface extending outside the optical semiconductor element along the light emitting surface. Yes.

  According to such an optical semiconductor element with a reflective layer and a phosphor layer, the reflective layer is disposed on the outer side in the orthogonal direction with respect to both the optical semiconductor element and the phosphor layer. For this reason, the light emitted or reflected from the side surfaces of the phosphor layer and the optical semiconductor element can be reflected upward. Therefore, directivity and front illuminance are good.

  Further, the phosphor layer has an outer portion disposed on a virtual surface extending outside the optical semiconductor element or an outer portion disposed so as to include the virtual surface. For this reason, the lower surface of the phosphor layer is wider than the light emitting surface of the optical semiconductor element. Therefore, when the phosphor layer is disposed on the light emitting surface of the light emitting diode element, even if the position of the phosphor layer is shifted in a direction orthogonal to the desired position, the outer portion of the phosphor layer is The light emitting surface can be reliably coated. As a result, the positional accuracy of the phosphor layer with respect to the optical semiconductor element is improved in the orthogonal direction.

  The present invention [2] includes the optical semiconductor element with a reflective layer and a phosphor layer according to the above [1] that satisfy the following formulas (1) and (2).

90 ° <θ ₁ <160 ° (1)
A ≤ Y (2)
(In formula, (theta) ₁ shows the angle which the straight line which connects the edge of the said light emission surface of the said optical semiconductor element and the inner edge of the upper end edge of the said reflection layer, and the said light emission surface makes.).

  A represents the vertical distance between the light emitting surface and the top surface of the phosphor layer.

Y represents the vertical distance between the light emitting surface and the inner edge of the upper edge of the reflective layer. )
In such an optical semiconductor element with a reflective layer and a phosphor layer, the orientation angle of light emitted from the optical semiconductor element with a reflective layer and a phosphor layer is improved, and thus the directivity is further improved.

  The reflective layer and phosphor layer according to the above [1] or [2], wherein the reflective layer has a reflectance of 80% or more when the reflective layer is irradiated with light having a wavelength of 450 nm at a thickness of 100 μm. An attached optical semiconductor element is included.

  Such an optical semiconductor element with a reflective layer and a phosphor layer has an even better front illuminance.

  This invention [4] contains the optical semiconductor element with a reflecting layer and fluorescent substance layer as described in any one of said [1]-[3] which satisfy | fills following formula (3).

B <X (3)
(Wherein, B represents the distance between the edge of the facing surface of the optical semiconductor element and the inner edge of the lower edge of the reflective layer. X represents the edge of the light emitting surface of the optical semiconductor element. And the distance in the orthogonal direction between the phosphor layer and the outer edge on the virtual plane.)
Such an optical semiconductor element with a reflective layer and a phosphor layer has better directivity and front illuminance.

  The invention [5] is any one of the above [1] to [4], wherein the reflective layer is in contact with the entire side surface between the light emitting surface and the facing surface of the optical semiconductor element. The optical semiconductor element with a reflecting layer and fluorescent substance layer of description is included.

  Such an optical semiconductor element with a reflective layer and a phosphor layer has better directivity and front illuminance.

  The invention [6] is any one of the above [1] to [3], wherein the phosphor layer is in contact with the entire side surface between the light emitting surface and the facing surface of the optical semiconductor element. And an optical semiconductor element with a phosphor layer and a phosphor layer.

  Such an optical semiconductor element with a reflective layer and a phosphor layer has good light extraction efficiency.

  The present invention [7] includes the reflective layer and the optical semiconductor element with a phosphor layer according to any one of the above [1] to [6], further including a diffusion layer disposed on the upper side of the phosphor layer. Contains.

  Such an optical semiconductor element with a reflective layer and a phosphor layer has better directivity and front illuminance.

  The present invention [8] includes the optical semiconductor element with a reflective layer and a phosphor layer according to the above [7], which satisfies the following formula (4).

A + C ≦ Y (4)
(In the formula, C represents the vertical length of the diffusion layer.)

  Such an optical semiconductor element with a reflective layer and a phosphor layer has an even better front illuminance.

  According to the optical semiconductor element with the reflective layer and the phosphor layer of the present invention, it is possible to manufacture an optical semiconductor device having good directivity and front illuminance while improving the positional accuracy of the phosphor layer with respect to the optical semiconductor element. it can.

1A to 1B show a first embodiment of an optical semiconductor element with a reflective layer and a phosphor layer according to the present invention, FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A. . 2A to 2G are process diagrams of the manufacturing method of the optical semiconductor element with the reflective layer and the phosphor layer in FIG. 1. FIG. 2A is a temporary fixing sheet preparation process, FIG. 2B is a temporary fixing process, and FIG. 2D shows a phosphor layer removing process, FIG. 2E shows a reflective layer forming process, FIG. 2F shows a cutting process, and FIG. 2G shows a mounting process. FIG. 3 shows a modified example of the first embodiment, in which the upper surface of the phosphor layer is positioned below the upper end of the reflective layer. FIG. 4 shows a modification of the first embodiment, in which the upper surface of the phosphor layer is positioned above the upper end of the reflective layer. FIG. 5 is a modification of the first embodiment, and shows a mode in which a diffusion layer is provided on the upper surface of the phosphor layer. 6A to 6B show a second embodiment of the optical semiconductor element with a reflective layer and a phosphor layer according to the present invention, FIG. 6A is a plan view, and FIG. 6B is a cross-sectional view taken along line BB in FIG. 6A. . 7A to 7E are process diagrams of a method for manufacturing the optical semiconductor element with a reflective layer and a phosphor layer in FIG. 6, FIG. 7A is a fluorescent layer preparation process, FIG. 7B is an element arrangement process, and FIG. The fluorescent layer removing step, FIG. 7D shows the reflective layer forming step, and FIG. 7E shows the cutting step. FIG. 8 shows a modification of the second embodiment, in which the side surface of the phosphor layer is formed so as to become wider toward the upper side. FIG. 9 is a modified example of the second embodiment and shows a mode in which a diffusion layer is provided on the upper surface of the phosphor layer. 10A to 10B show a third embodiment of the optical semiconductor element with a reflective layer and a phosphor layer according to the present invention, FIG. 10A is a plan view, and FIG. 10B is a cross-sectional view taken along line AA in FIG. 10A. . 11A to 11G are process diagrams of a method for manufacturing the optical semiconductor element with a reflective layer and a phosphor layer in FIG. 10, FIG. 11A is a temporary fixing sheet preparation process, FIG. 11B is a temporary fixing process, and FIG. 11D shows a phosphor layer removing process, FIG. 11E shows a reflective layer forming process (before the reflective layer is formed), FIG. 11F shows a reflective layer forming process (after the reflective layer is formed), and FIG. The cutting process is shown. FIG. 12 shows an optical semiconductor element with a reflective layer and a phosphor layer of a comparative example, in which a reflective layer is not provided on the side of the phosphor layer. FIG. 13 shows an optical semiconductor element with a reflective layer and a phosphor layer of a comparative example, in which the phosphor layer does not include an outer portion extending outside the optical semiconductor element.

<First Embodiment>
In FIG. 1B, the vertical direction of the paper is the vertical direction (first direction, thickness direction), the upper side of the paper is the upper side (one side in the first direction, the one side in the thickness direction), and the lower side of the paper is the lower side (the other side in the first direction). , The other side in the thickness direction). The left-right direction on the paper surface is the left-right direction (second direction orthogonal to the first direction, an example of the orthogonal direction to the up-down direction), the left side of the paper is the left side (the second direction one side), and the right side of the paper surface is the right side (the other second direction Side). The paper thickness direction is the front-rear direction (the third direction orthogonal to the first direction and the second direction, an example of the orthogonal direction to the vertical direction), the front side of the paper is the front side (one side in the third direction), and the back side of the paper is the rear side (The other side in the third direction). Specifically, it conforms to the direction arrow in each figure.

  With reference to FIGS. 1A to 1B, a first embodiment of an optical semiconductor element with a reflective layer and a phosphor layer (hereinafter also simply referred to as an element with two layers) of the present invention will be described.

  The two-layer element is not an optical semiconductor device (light emitting device), that is, does not include a substrate (electrode substrate) provided in the optical semiconductor device. Specifically, the element with two layers includes an optical semiconductor element, a phosphor layer, and a reflective layer (reflective member), and optionally includes a diffusion layer. The element with two layers is preferably composed of an optical semiconductor element, a phosphor layer and a reflective layer, or is composed of an optical semiconductor element, a phosphor layer, a reflective layer and a diffusion layer. That is, the element with two layers is configured so as not to be electrically connected to the electrode provided on the substrate of the optical semiconductor device. The two-layered element is a part of an optical semiconductor device, that is, a part for producing the optical semiconductor device, and is a device that is distributed by itself and is industrially usable.

  As shown in FIGS. 1A to 1B, the element with two layers 1 includes an optical semiconductor element 2, a phosphor layer 3, and a reflective layer 4.

  The optical semiconductor element 2 is, for example, an LED (light emitting diode element) or LD (semiconductor laser element) that converts electrical energy into optical energy. Preferably, the optical semiconductor element 2 is a blue LED that emits blue light. On the other hand, the optical semiconductor element 2 does not include a rectifier (semiconductor element) such as a transistor having a technical field different from that of the optical semiconductor element.

  The optical semiconductor element 2 has a substantially flat plate shape along the left-right direction and the front-rear direction. The optical semiconductor element 2 has a substantially rectangular shape in plan view (preferably, a substantially square shape in plan view). The optical semiconductor element 2 includes a light emitting surface 21, a facing surface 22, and a side surface 23.

  The light emitting surface 21 is the upper surface of the optical semiconductor element 2. The light emitting surface 21 has a flat shape. A phosphor layer 3 (described later) is provided on the light emitting surface 21.

  The facing surface 22 is the lower surface of the optical semiconductor element 2 and is the surface on which the electrode 24 is formed. The facing surface 22 is disposed to face the light emitting surface 21 with a space on the lower side. A plurality (two) of the electrodes 24 are provided and have a shape that slightly protrudes downward from the facing surface 22.

  The side surface 23 connects the peripheral edge of the light emitting surface 21 and the peripheral edge of the facing surface 22.

  The dimensions of the optical semiconductor element 2 are appropriately set. Specifically, the thickness (vertical length) is, for example, 0.1 μm or more, preferably 0.2 μm or more, more preferably 10 μm or more. And, for example, 500 μm or less, preferably 200 μm or less. The length in the left-right direction and / or the front-rear direction of the optical semiconductor element 2 is, for example, 200 μm or more, preferably 500 μm or more, and for example, 3000 μm or less, preferably 2000 μm or less.

  The phosphor layer 3 is disposed on the upper side and the side of the optical semiconductor element 2 so as to cover the light emitting surface 21 and the side surface 23 of the optical semiconductor element 2. The phosphor layer 3 has a substantially rectangular shape in plan view (preferably, a substantially square shape in plan view), and is formed so as to include the optical semiconductor element 2 when projected in the vertical direction. The phosphor layer 3 includes an inner portion 31 disposed above the optical semiconductor element 2 and an outer portion 32 disposed outside the inner portion 31.

  The inner portion 31 has a substantially flat plate shape along the left-right direction and the front-rear direction, and is formed to have the same shape as the optical semiconductor element 2 in plan view. That is, the entire lower surface of the inner portion 31 is in contact with and covers the entire light emitting surface 21 of the optical semiconductor element 2.

  The outer portion 32 has a substantially rectangular frame shape in plan view extending in the vertical direction. The outer portion 32 includes an upper portion 32a and a lower portion 32b. The outer portion 32 includes a virtual surface 6 that extends outward in the left-right direction and the front-rear direction of the optical semiconductor element 2 along the light-emitting surface 21 between the upper portion 32 a and the lower portion 32 b. That is, the outer portion 32 is partitioned by the virtual surface 6 into an upper portion 32 a and a lower portion 32 b in the vertical direction.

  The upper portion 32a of the outer portion 32 is disposed outside the inner portion 31, and the peripheral edge of the inner portion 31 and the inner peripheral edge of the upper portion 32a are integrally continuous.

  The lower portion 32b of the outer portion 32 is disposed outside the optical semiconductor element 2 so as to contact and cover the side surface 23 of the optical semiconductor element 2. That is, the inner peripheral end surface of the lower portion 32 b is in contact with the entire side surface 23 of the optical semiconductor element 2.

  The thickness of the inner portion 31 of the phosphor layer 3, that is, the vertical distance between the light emitting surface 21 and the upper surface of the phosphor layer 3 (A shown in FIG. 1B) is, for example, 10 μm or more, preferably 50 μm or more. For example, it is 300 micrometers or less, Preferably, it is 150 micrometers or less.

  The ratio between the vertical distance A and the length of the light emitting surface 21 in the horizontal direction or the front-rear direction (orthogonal direction distance) is, for example, 1: 100 to 30: 100, preferably 5: 100 to 15: 100. is there.

  The length of the outer portion 32 of the phosphor layer 3 in the left-right direction or the front-rear direction, that is, the edge (point m) of the light emitting surface 21 of the optical semiconductor element 2 and the outer edge on the virtual surface 6 of the phosphor layer 3 The distance in the left-right direction or the front-rear direction with respect to (point k) (X shown in FIG. 1B) is, for example, 10 μm or more, preferably 50 μm or more, more preferably 70 μm or more, and, for example, 2000 μm or less, preferably Is 1500 μm or less, more preferably 500 μm or less, and even more preferably 150 μm or less.

The ratio between the distance X and the length of the light emitting surface 21 in the left-right direction or the front-rear direction is, for example,
1: 100-150: 100, Preferably, it is 5: 100-100: 100, More preferably, it is 7: 100-50: 100.

  The phosphor layer 3 is formed from, for example, a phosphor composition containing a phosphor and a resin.

  The phosphor converts the wavelength of the light emitted from the optical semiconductor element 2. Examples of the phosphor include a yellow phosphor that can convert blue light into yellow light, and a red phosphor that can convert blue light into red light.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON.

Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu.

  Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.

  The average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less. But there is.

  The phosphors can be used alone or in combination of two or more.

  The blending ratio of the phosphor is, for example, 10% by mass or more, preferably 20% by mass or more, and for example, 80% by mass or less, preferably 70% by mass or less with respect to the phosphor composition.

  The resin is a matrix in which the phosphor is uniformly dispersed in the phosphor composition, and examples of the resin include a curable resin and a thermoplastic resin. Preferably, a curable resin is used. Examples of the curable resin include thermosetting resins such as a two-stage reaction curable resin and a one-stage reaction curable resin.

  The two-stage reaction curable resin has two reaction mechanisms. In the first stage reaction, the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained. To C-stage (complete curing). That is, the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions. The B stage state is a state between the A stage state where the thermosetting resin is in a liquid state and the fully cured C stage state, and curing and gelation proceed slightly, and the compression elastic modulus is C stage. A semi-solid state or a solid state smaller than the compression elastic modulus of the state.

  The one-stage reaction curable resin has one reaction mechanism, and can be changed from the A-stage state to the C-stage (completely cured) by the first-stage reaction. Such a one-stage reaction curable resin can stop the reaction in the middle of the first-stage reaction and change from the A-stage state to the B-stage state. The reaction is restarted, and the thermosetting resin that can be C-staged (completely cured) from the B-stage state is included. That is, the thermosetting resin includes a thermosetting resin that can be in a B-stage state. In addition, the one-stage reaction curable resin cannot be controlled to stop in the middle of the one-stage reaction, that is, cannot enter the B stage state, and is changed from the A stage state to the C stage (completely cured). ) Can be included.

  Preferably, the thermosetting resin includes a thermosetting resin that can be in a B-stage state.

  Examples of the thermosetting resin that can be in the B stage state include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. The thermosetting resin that can be in the B-stage state preferably includes a silicone resin and an epoxy resin, and more preferably includes a silicone resin.

  Examples of the silicone resin include a phenyl silicone resin containing a phenyl group in the molecule, for example, a methyl silicone resin containing a methyl group in the molecule.

  A thermosetting resin can be used individually or can use 2 or more types together.

  The blending ratio of the resin is the remainder of the blending ratio of the phosphor (and additive), and is, for example, 20% by mass or more, preferably 30% by mass or more, and, for example, 90% by mass with respect to the phosphor composition. It is not more than mass%, preferably not more than 80 mass%.

  The fluorescent composition may contain known additives (described later) such as light diffusing particles (described later), fillers (described later), and thixotropic particles (described later) in an appropriate ratio.

  When the light diffusing particles are contained, the mixing ratio of the light diffusing particles is, for example, 1% by mass or more, preferably 10% by mass or more, and, for example, 60% by mass or less with respect to the fluorescent composition. Preferably, it is 50 mass% or less.

  When the filler is contained, the blending ratio of the filler is, for example, 1% by mass or more, preferably 10% by mass or more, and, for example, 60% by mass or less, preferably, with respect to the fluorescent composition. It is 50 mass% or less.

  When the thixotropy-imparting particles are contained, the mixing ratio of the thixotropy-imparting particles is, for example, 0.1% by mass or more, preferably 0.5% by mass or more with respect to the fluorescent composition. It is 10 mass% or less, Preferably, it is 3 mass% or less.

  The reflective layer 4 is arranged on the outer side in the left-right direction and the outer side in the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3. The reflective layer 4 has a substantially rectangular frame shape in plan view extending in the vertical direction.

  The inner peripheral edge (surface) of the reflective layer 4 is in contact with and covers the entire side surface of the phosphor layer 3. The reflective layer 4 is disposed so as to include the optical semiconductor element 2 and the phosphor layer 3 when projected in the left-right direction or the front-rear direction. The upper edge of the reflective layer 4 coincides with the upper surface of the phosphor layer 3 in the vertical direction, and the lower edge of the reflective layer 4 is the lower surface of the phosphor layer 3 and the opposite surface of the optical semiconductor element 2 in the vertical direction. Matches 22. That is, the reflective layer 4 is formed such that its upper surface is flush with the upper surface of the phosphor layer 3 and its lower surface is flush with the lower surface of the phosphor layer 3 and the opposing surface 22 of the optical semiconductor element 2. Has been.

  The reflective layer 4 preferably satisfies the following formula (1), more preferably the following formula (1 ′), and still more preferably the following formula (1 ″).

90 ° <θ ₁ <160 ° (1)
100 ° <θ ₁ <160 ° (1 ′)
100 ° <θ ₁ <150 ° ( ₁ ″)
θ ₁ is a straight line L 1 connecting the edge (point m) of the light emitting surface 21 of the optical semiconductor element 2 and the inner edge (point n) of the upper edge of the reflective layer 4 along the left-right direction or the front-rear direction in plan view. An angle formed by the light emitting surface 21 (see FIG. 1B) is shown.

  Further, the vertical distance Y between the light emitting surface 21 of the optical semiconductor element 2 and the inner edge (point n) of the upper edge of the reflective layer 4 (that is, the intersection of the inner edge of the reflective layer 4 and the virtual surface 6 ( The distance Y) between the point k) and the inner edge (point n) of the upper end edge of the reflective layer 4 is, for example, 10 μm or more, preferably 50 μm or more, more preferably 150 μm or more. It is 800 μm or less, preferably 500 μm or less, and more preferably 250 μm or less. By setting the distance Y to be equal to or more than the lower limit, it is possible to improve the color tone and reduce the color variation. On the other hand, by setting the distance Y to the upper limit or less, it is possible to improve heat dissipation and improve the reliability of the element with two layers 1.

  In the first embodiment, the relational expression (2 ′) of A = Y is satisfied.

The reflective layer 4 extends in the vertical direction so as to be substantially perpendicular to the facing surface 22 of the optical semiconductor element 2. That is, the angle θ ₂ formed by the inner edge surface of the reflective layer 4 and the lowermost surface of the phosphor layer 3 is, for example, 88 ° or more and 92 ° or less from the viewpoint of manufacturability, directivity, and illuminance. The angle is preferably 90 °.

  The length of the reflective layer 4 in the left-right direction or the front-rear direction (particularly the left-right direction or the front-rear direction length at the upper edge, D shown in FIG. 1B) exceeds, for example, 0 μm from the viewpoint of directivity, The thickness is 50 μm or more, more preferably 100 μm or more, and for example, 500 μm or less, preferably 300 μm or less.

  The distance in the left-right direction or the front-rear direction from the inner edge of the lower end edge of the reflective layer 4 to the edge of the facing surface 22 of the optical semiconductor element 2 (B shown in FIG. 1B) exceeds, for example, 0 μm, preferably It is 10 μm or more, more preferably 50 μm or more, still more preferably 70 μm or more, and for example, 2000 μm or less, preferably 1500 μm or less, more preferably 500 μm or less, and further preferably 150 μm or less.

  The reflective layer 4 has a reflectance of 70% or more, preferably 80% or more, more preferably 90% or more, for example, 100% when irradiated with light having a wavelength of 450 nm with a thickness of 100 μm. It is as follows. By setting the reflectance within the above range, the front illuminance can be further improved. The method for measuring the reflectance can be obtained by measuring the reflectance at a wavelength of 450 nm using an ultraviolet-visible near-infrared spectrophotometer with an optical path confirmation method using an integrating sphere.

  The reflective layer 4 has a light transmittance of, for example, 20% or less, preferably 10% or less when irradiated with light having a wavelength of 450 nm and a thickness of 100 μm. The method for measuring the light transmittance will be described in detail in Examples.

  The reflective layer 4 is formed from, for example, a reflective composition containing a light reflection component and a resin.

  The light reflection component is a particle that reflects without transmitting light, and examples thereof include white particles such as white inorganic particles and white organic particles. Preferably, white inorganic particles are used from the viewpoint of illuminance and durability.

  Examples of the material constituting the white inorganic particles include oxides such as titanium oxide, zinc oxide, zirconium oxide, and aluminum oxide, such as carbonates such as lead white (basic lead carbonate) and calcium carbonate, such as kaolin. Clay minerals. From the viewpoint of illuminance, an oxide is preferable, and titanium oxide is more preferable.

  The average particle diameter of the light reflection component is, for example, 0.1 μm or more, preferably 0.2 μm or more, and for example, 10 μm or less, preferably 2.0 μm or less.

  In the present invention, the average particle diameter of the particles is calculated as a D50 value, and specifically measured by a laser diffraction particle size distribution meter.

  The content ratio of the light reflection component is, for example, 1% by mass or more, preferably 5% by mass or more, more preferably 10% by mass or more, and, for example, 50% by mass or less with respect to the reflective composition. Preferably, it is 30 mass% or less.

  The resin is a matrix that uniformly disperses the light reflecting component in the reflective composition. For example, the resin is the same as the resin contained in the fluorescent composition.

  The blending ratio of the resin is the balance of the blending ratio of the light reflection component (and additive), and for example, 10% by mass or more, preferably 20% by mass or more, more preferably, with respect to the reflective composition, For example, it is 99% by mass or less, preferably 75% by mass or less, and more preferably less than 50% by mass.

  The reflective composition may also contain additives such as light diffusing particles, fillers, and thixotropic particles at an appropriate ratio.

  The light diffusing particles are transparent particles that diffuse light, and examples thereof include particles having a high refractive index difference from the resin. The refractive index difference between the light diffusing particles and the resin is, for example, 0.04 or more, preferably 0.10 or more, and, for example, 0.50 or less. Thereby, the diffusion of light in the reflective layer 4 can be improved, and the reflectance can be further improved.

  Specific examples include light diffusing inorganic particles and light diffusing organic particles.

  Examples of the light diffusing inorganic particles include silica particles and composite inorganic oxide particles (such as glass particles).

  The composite inorganic oxide particles are preferably glass particles, specifically containing silica or silica and boron oxide as main components, and also containing aluminum oxide, calcium oxide, zinc oxide, strontium oxide, Magnesium oxide, zirconium oxide, barium oxide, antimony oxide and the like are contained as accessory components. The content ratio of the main component in the composite inorganic oxide particles is, for example, 40% by mass or more, preferably 50% by mass or more, and for example, 90% by mass or less, preferably with respect to the composite inorganic oxide particles. 80% by mass or less. The content ratio of the subcomponent is the remainder of the content ratio of the main component described above.

  Examples of the light diffusing organic particles include acrylic resin particles, styrene resins, acrylic-styrene resin particles, silicone resin particles, polycarbonate resin particles, benzoguanamine resin particles, polyolefin resin particles, and polyester resin particles. , Polyamide resin particles, polyimide resin particles, and the like.

  The refractive index of the light diffusing particles is, for example, 1.40 or more and 1.60 or less. The refractive index difference between the light diffusing particles and the resin is, for example, 0.04 or more, preferably 0.10 or more, and, for example, 0.50 or less. The refractive index is measured by, for example, an Abbe refractometer.

  The light diffusing particles are preferably light diffusing inorganic particles from the viewpoint of light diffusibility and durability, and more preferably silica particles and composite inorganic oxide particles.

  The average particle diameter of the light diffusing particles is, for example, 1.0 μm or more, preferably 5.0 μm or more, and for example, 100 μm or less, preferably 50 μm or less.

  When the reflective composition contains light diffusing particles, the content ratio of the light diffusing particles is, for example, 1% by mass or more, preferably 10% by mass or more, more preferably 20% by mass with respect to the reflective composition. %, For example, 50% by mass or less, preferably 40% by mass or less.

  The filler is a transparent particle that has a low refractive index difference from the resin. Specifically, particles having a refractive index difference with the resin of 0.03 or less, preferably 0.01 or less. Thereby, the rigidity of the reflective layer 4 can be improved while ensuring the transparency of the reflective layer 4.

  The refractive index of the filler is, for example, 1.40 or more, preferably 1.45 or more, and for example, 1.60 or less, preferably 1.55 or less.

  Examples of such a filler include particles of the same material as the light diffusing particles, preferably inorganic particles, and more preferably silica particles and composite inorganic oxide particles (glass particles and the like).

  The average particle diameter of the filler is, for example, 1.0 μm or more, preferably 5.0 μm or more, and for example, 100 μm or less, preferably 50 μm or less.

  In addition, in the particle | grains used for this invention, even if it is the same material, even if a material is the same, it is suitably distinguished according to the refractive index difference of resin.

  When the reflective composition contains a filler, the content ratio of the filler is, for example, 1% by mass or more, preferably 10% by mass or more, more preferably more than 20% by mass with respect to the reflective composition. For example, it is 50 mass% or less, Preferably, it is 40 mass% or less.

  The thixotropy imparting particles are particles for imparting or improving thixotropy to the reflective composition, and preferably include nano silica such as fumed silica (fumed silica) from the viewpoint of reflectivity.

  The fumed silica may be, for example, either hydrophobic fumed silica whose surface has been hydrophobized by a surface treating agent such as dimethyldichlorosilane or silicone oil, or hydrophilic fumed silica that has not been surface-treated.

The average particle diameter of nano silica (particularly fumed silica) is, for example, 1 nm or more, preferably 5 nm or more, and for example, 200 nm or less, preferably 50 nm or less. The specific surface area of nanosilica (particularly fumed silica) (BET method), for example, ^{50 m} 2 / g or more, preferably not 200 meters ² / g or more, and is, for example, at most 500m ² / g.

  When the reflective composition contains thixotropic particles, the content ratio of the thixotropic particles in the reflective composition is, for example, 0.1% by mass or more, preferably 0.5% by mass or more. 10% by mass or less, preferably 3% by mass or less.

  The half-value angle of light emitted from the element with two layers 1 is, for example, 130 degrees or less, preferably 125 degrees or less, more preferably 120 degrees or less, and for example, 90 degrees or more, preferably 100 degrees. More than degrees. The method for measuring the half-value angle will be described in detail in Examples.

  The orientation angle (COA) of light emitted from the element with two layers 1 is, for example, 0.10 degrees or less, preferably 0.05 degrees or less, more preferably 0.03 degrees or less, , 0.01 degrees or more. The method for measuring the orientation angle will be described in detail in Examples.

  The front illuminance of the light emitted from the two-layered element 1 is, for example, more than 60%, preferably 100% or more, more preferably 110% or more, and further preferably 120% or more. For example, it is 130% or less. The method for measuring the front illuminance will be described in detail in Examples.

<The manufacturing method of 1st Embodiment>
With reference to FIG. 2A-FIG. 2G, the manufacturing method of the element 1 with two layers of 1st Embodiment is demonstrated. The manufacturing method of the element 1 with two layers of 1st Embodiment is equipped with a temporary fixing sheet preparation process, a temporary fixing process, a fluorescent substance layer formation process, a fluorescent substance layer removal process, a reflective layer formation process, and a cutting process, for example.

  First, as shown in FIG. 2A, in the temporarily fixing sheet preparation step, a temporarily fixing sheet is prepared.

  The temporary fixing sheet 40 can be a known or commercially available sheet, and includes, for example, a support base 41 and a pressure-sensitive adhesive layer 42 disposed on the support base 41.

  Examples of the support substrate 41 include polymer films such as polyethylene film and polyester film (PET), for example, ceramic sheets, for example, metal foil.

  The pressure sensitive adhesive layer 42 is disposed on the entire upper surface of the support substrate 41. The pressure-sensitive adhesive layer 42 has a sheet shape on the upper surface of the support substrate 41. The pressure-sensitive adhesive layer 42 is formed from a pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by, for example, treatment (for example, irradiation of ultraviolet rays or heating). The thickness of the pressure-sensitive adhesive layer 42 is, for example, 1 μm or more, preferably 10 μm or more, and for example, 1000 μm or less, preferably 500 μm or less.

  Next, as shown in FIG. 2B, in the temporary fixing step, the plurality of optical semiconductor elements 2 are temporarily fixed on the temporary fixing sheet 40 at intervals in the left-right direction and the front-rear direction.

  Specifically, the opposing surfaces 22 of the plurality of optical semiconductor elements 2 are pressure-sensitive bonded to the upper surface of the pressure-sensitive adhesive layer 42. At this time, the optical semiconductor element 2 is pressed against the pressure-sensitive adhesive layer 42 so that the plurality of electrodes 24 are buried in the pressure-sensitive adhesive layer 42.

  Next, as shown in FIG. 2C, in the phosphor layer forming step, the phosphor layer 3 is disposed on the temporary fixing sheet 40 so as to cover the optical semiconductor element 2.

  Specifically, a phosphor transfer sheet in which the phosphor layer 3 is disposed on the release sheet is prepared, and then the optical semiconductor element 2 is disposed so that the optical semiconductor element 2 is buried in the phosphor layer 3. The phosphor transfer sheet is pressed and laminated against the temporarily fixed sheet 40, and then the release sheet is peeled from the phosphor layer 3.

  For producing the phosphor transfer sheet, for example, a phosphor composition and a solvent are blended to prepare a varnish of the phosphor composition, and the varnish is applied to the surface of the release sheet and dried. Thereafter, when the fluorescent composition contains a thermosetting resin that can be in a B-stage state, the fluorescent composition is B-staged (semi-cured). Specifically, the fluorescent composition is heated. Thereby, the phosphor layer 3 is formed on the release sheet.

  In this way, the light emitting surface 21 and the side surface 23 of the optical semiconductor element 2 and the upper surface of the temporary fixing sheet 40 (the upper surface exposed from the optical semiconductor element 2) are covered with the phosphor layer 3. That is, the optical semiconductor element assembly 9 with a phosphor layer is obtained.

  Next, as shown in FIG. 2D, in the phosphor layer removing step, a part of the phosphor layer 3 of the photosemiconductor layer-attached optical semiconductor element assembly 9 is removed.

  Specifically, the phosphor layer 3 between the adjacent optical semiconductor elements 2 is removed so that the phosphor layer 3 has a desired size. For example, using a wide dicing saw (dicing blade) 43 (see FIG. 2D), the phosphor layer 3 is cut into a substantially grid shape in plan view.

  Thereby, in the optical semiconductor element assembly 9 with a phosphor layer, a gap 44 is formed in a portion where the phosphor layer 3 is removed.

  Next, as shown in FIG. 2E, in the reflective layer forming step, the reflective layer 4 is formed in the gap 44.

  Specifically, a reflection layer transfer sheet in which a reflection layer 4 having a desired pattern is arranged on a release sheet is prepared, and subsequently, the optical semiconductor with a phosphor layer is filled so that the gap 44 is filled with the reflection layer 4. The reflective layer transfer sheet is pressed against the element assembly 9 and laminated, and then the release sheet is peeled from the reflective layer 4.

  For the reflective layer transfer sheet, for example, a reflective composition and a solvent are blended to prepare a varnish of the reflective composition, and the varnish is applied to the surface of the release sheet and dried. Thereafter, when the reflective composition contains a thermosetting resin that can be in a B-stage state, the reflective composition is made into a B-stage (semi-cured). Specifically, the reflective composition is heated. Thereby, the reflective layer 4 is formed. Thereafter, the reflective layer 4 is patterned by a known method so as to have a pattern corresponding to the gap 44.

  In addition, without using a reflective layer transfer sheet, the varnish of the reflective composition can be directly potted in the gap 44 and the varnish can be dried by heating.

  Thereafter, when the phosphor layer 3 and / or the reflective layer 4 contains a thermosetting resin and is in the B-stage state or the A-stage state, the phosphor layer is further heated by, for example, an oven. 3 and / or the reflective layer 4 is cured (completely cured, C-staged).

  Thereby, the plurality of optical semiconductor elements 2, the phosphor layer 3, and the reflective layer 4 are laminated on the temporarily fixing sheet 40. That is, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is obtained.

  Next, as shown in FIG. 2F, in the cutting step, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is cut (individualized).

  Specifically, the reflective layer 4 is cut between the optical semiconductor elements 2 adjacent to each other, as indicated by a virtual line in FIG. 2E. As a result, the plurality of optical semiconductor elements 2 are separated into pieces.

  In order to cut the reflective layer 4, for example, a dicing apparatus using a narrow disk-shaped dicing saw, for example, a cutting apparatus using a cutter, for example, a cutting apparatus such as a laser irradiation apparatus is used.

  Subsequently, the temporary fixing sheet 40 is peeled from the optical semiconductor element 2 as indicated by a virtual line in FIG. 2F.

  Thereby, the element 1 with two layers is obtained.

  2G, an optical semiconductor device 8 such as a light emitting diode device can be obtained by flip-chip mounting the element with two layers 1 on an electrode substrate 7 such as a diode substrate.

  The electrode substrate 7 has a substantially flat plate shape. Specifically, the electrode substrate 7 is formed of a laminated plate in which a conductor layer is laminated as a circuit pattern on the upper surface of an insulating substrate. The insulating substrate is made of, for example, a silicon substrate, a ceramic substrate, a plastic substrate (for example, a polyimide resin substrate), or the like. The conductor layer is made of a conductor such as gold, copper, silver, or nickel. The conductor layer includes an electrode (not shown) for electrical connection with the single optical semiconductor element 2. The thickness of the electrode substrate 7 is, for example, 25 μm or more, preferably 50 μm or more, and, for example, 2000 μm or less, preferably 1000 μm or less.

<Effect>
In the element with two layers 1 of the first embodiment, the reflective layer 4 is disposed on the outer side in the left-right direction and the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3. For this reason, the light emitted or reflected from the phosphor layer 3 and the side surface 23 of the optical semiconductor element 2 can be reflected upward. Therefore, directivity and front illuminance are good.

  Further, the phosphor layer 3 is in contact with the entire side surface 23 of the optical semiconductor element 2. For this reason, the light extraction efficiency is improved.

  In addition, the phosphor layer 3 has an outer portion 32 disposed so as to include a virtual surface 6 extending to the outside of the optical semiconductor element 2. For this reason, when the phosphor layer 3 is disposed on the light emitting surface 21 of the optical semiconductor element 2 (see, for example, FIG. 2C and FIG. 2D), the phosphor layer 3 is assumed to be laterally moved from the light emitting surface 21 of the optical semiconductor element 2. Or even if it deviates in the front-rear direction, it is possible to suppress the occurrence of an uncoated portion where the phosphor layer 3 is not coated on the light emitting surface 21 of the optical semiconductor element 2. That is, the outer portion 32 of the phosphor layer 3 can reliably cover the light emitting surface 21 of the optical semiconductor element 2. As a result, the positional accuracy of the phosphor layer 3 with respect to the optical semiconductor element 2 is improved in the left-right direction and the front-rear direction.

  The two-layered element 1 is a component for manufacturing an optical semiconductor device 8 such as a light-emitting diode device by being mounted on an electrode substrate 7 such as a diode substrate. Thus, it is possible to manufacture the optical semiconductor device 8 having good directivity and front illuminance while improving the positional accuracy.

  In addition, the element with two layers 1 can be checked for light emission performance (directivity, illuminance, color, etc.) by connecting it to a test device before being mounted on the electrode substrate 7. Therefore, when the optical semiconductor device 8 incompatible with the desired performance is generated, the recovery operation of the electrode substrate 7 incorporated in the optical semiconductor device 8 can be prevented in advance. This is useful as a manufacturing part.

<Modification of First Embodiment>
In the modification of the first embodiment, the same members and steps as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the embodiment of FIG. 1B, the optical semiconductor element 2, the phosphor layer 3, and the reflective layer 4 are formed in a substantially square shape in plan view. For example, a part or all of these are formed in a substantially rectangular shape in plan view. You can also.

In this case, the point X is such that the distance X between the edge (point m) of the light emitting surface 21 of the optical semiconductor element 2 and the outer edge (point k) on the light emitting surface 21 of the phosphor layer 3 is the shortest. Select m and point k. Then, θ ₁ , θ ₂ , A, B, D, X, Y, L1, etc. are determined based on the selected point m, point k, and side sectional view at that time. And it is preferable to satisfy | fill Formula (1)-(2 ') on the conditions which selected the point m and the point k so that X may become the shortest at least. Furthermore, it is more preferable to satisfy the expressions (1) to (2 ′) even when the above θ ₁ or the like is determined in the side sectional view orthogonal to the selected side sectional view.

  In the embodiment of FIG. 1B, the phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4. For example, as shown in FIG. It can also be formed so that the upper surface is located below the upper surface of the reflective layer 4.

  In the embodiment of FIG. 3, the relational expression (2 ″) of A <Y is satisfied.

  In the embodiment of FIG. 1B, the phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4. For example, as shown in FIG. The upper surface of the reflective layer 4 may be positioned above the upper surface.

  In the embodiment of FIG. 4, the relational expression of Y <A is satisfied.

  The embodiment of FIGS. 3 and 4 is also included in the present invention, and has the same effects as the embodiment of FIG. 1B.

  In the present invention, from the viewpoint of directivity, FIG. 1B (A = Y) and the embodiment of FIG. 3 (A <Y) are preferable. That is, an embodiment that satisfies the relational expression (2) of A ≦ Y is preferable.

  When satisfying the relational expression (2) of A ≦ Y, the vertical distance (Y−A) from the inner edge (point n) of the upper edge of the reflective layer 4 to the upper surface of the phosphor layer 3 is, for example, 100 μm or less, preferably 50 μm or less, and for example, 0 μm or more. By making the distance within the above range, handling properties can be improved. In addition, gripping and transport using a transport tool such as a transport collet can be facilitated.

  In the embodiment of FIG. 1B, the upper surface of the phosphor layer 3 is exposed, but for example, as shown in FIG. 5, the diffusion layer 5 may be disposed on the upper surface of the phosphor layer 3.

  The diffusion layer 5 has a substantially flat plate shape along the left-right direction and the front-back direction, and is formed to have the same shape as the inner portion 31 of the phosphor layer 3 in plan view. Further, the upper surface of the diffusion layer 5 coincides with the upper end edge of the reflection layer 4 in the vertical direction. That is, the diffusion layer 5 is formed so that the upper surface thereof is flush with the upper surface of the reflection layer 4.

  The thickness (length in the vertical direction, C shown in FIG. 5) of the diffusion layer 5 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 240 μm or less, preferably 150 μm or less.

  The light transmittance when the diffusion layer 5 is irradiated with light having a wavelength of 450 nm and having a thickness of 100 μm is, for example, 60% or more, preferably 80% or more, and, for example, 100% or less.

  The diffusion layer 5 is formed of, for example, a diffusion transparent composition containing a transparent resin and light diffusing particles.

  As the transparent resin, the same resin as that described above in the reflective layer 4 can be used, and a silicone resin is preferable.

  The blending ratio of the transparent resin is, for example, 5% by mass or more, preferably 10% by mass or more, more preferably 25% by mass or more, for example, 99% by mass with respect to the diffusing transparent composition. Hereinafter, it is preferably 80% by mass or less, and more preferably less than 50% by mass.

  The light diffusing particles may be the same as the light diffusing particles described above in the reflective layer 4. Among these, from the viewpoint of good light transmittance and forward diffusibility, preferably, light diffusing inorganic particles having a high refractive index difference from a transparent resin (for example, silicone resin) are mentioned, and silicon oxide particles are more preferable. And composite inorganic oxide particles, and more preferably a combination of silicon oxide particles and composite inorganic oxide particles.

  The content ratio of the light diffusing particles is, for example, 1% by mass or more, preferably 20% by mass or more, more preferably more than 50% by mass with respect to the diffusing transparent composition, and for example, 95% by mass. Hereinafter, it is preferably 90% by mass or less, more preferably 75% by mass or less, and further preferably 40% by mass or less.

  The diffusive transparent composition can also contain known additives such as fillers and thixotropy-imparting particles in an appropriate ratio.

  Examples of the filler include the same ones as those described above for the reflective layer 4, and preferably silica particles and composite inorganic oxide particles (such as glass particles).

  When the filler is contained, the blending ratio of the filler is, for example, 1% by mass or more, preferably 10% by mass or more, more preferably more than 20% by mass with respect to the diffusing transparent composition. For example, it is 50% by mass or less, preferably 40% by mass or less.

  The thixotropic property-imparting particles may be the same as the thixotropic property-imparting particles described above in the reflective layer 4, and preferably nanosilica.

  When the thixotropic particles are contained, the blending ratio of the thixotropic particles is, for example, 0.1% by mass or more, preferably 0.5% by mass or more with respect to the diffusive transparent composition. 10% by mass or less, preferably 3% by mass or less.

  The embodiment of FIG. 5 is also included in the present invention, and has the same effects as the embodiment of FIG. 1B. From the viewpoint of further improving the directivity and the front illuminance, the embodiment of FIG. 5 is preferable.

  In the embodiment of FIG. 5, the diffusion layer 5 is formed so that the upper surface thereof is flush with the upper surface of the reflection layer 4. For example, although not shown, the diffusion layer 5 is reflective on the upper surface. It may be formed so as to be located above or below the upper surface of the layer 4.

  In the present invention, from the viewpoint of directivity, the embodiment in FIG. 5 (A + C = Y), preferably the embodiment in which the upper surface of the diffusion layer 5 is located below the upper surface of the reflective layer 4 (A + C <Y)). Is mentioned. That is, an embodiment that satisfies the relational expression (4) of A + C ≦ Y is preferable.

  Furthermore, the vertical distance {Y− (A + C)} between the inner edge (point n) of the upper end edge of the reflective layer 4 and the upper surface of the diffusion layer 5 is, for example, 100 μm or less, preferably 50 μm or less. For example, it is 0 μm or more. By making the distance within the above range, handling properties can be improved. In addition, gripping and transport using a transport tool such as a transport collet can be facilitated.

Second Embodiment
With reference to FIG. 6A-FIG. 6B, 2nd Embodiment of the element 1 with two layers of this invention is described.

  In the second embodiment, the same members and steps as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIGS. 6A to 6B, the two-layer element 1 includes an optical semiconductor element 2, a phosphor layer 3, and a reflective layer 4.

  The phosphor layer 3 is disposed on the upper side of the optical semiconductor element 2 so as to cover the light emitting surface 21 of the optical semiconductor element 2. The phosphor layer 3 has a substantially flat plate shape along the left-right direction and the front-rear direction. The phosphor layer 3 has a substantially rectangular shape in plan view, and is formed so as to include the optical semiconductor element 2 when projected in the vertical direction. The phosphor layer 3 includes an inner portion 31 disposed above the optical semiconductor element 2 and an outer portion 32 disposed outside the inner portion 31.

  The inner portion 31 has a substantially flat plate shape along the left-right direction and the front-rear direction, and is formed to have the same shape as the optical semiconductor element 2 in plan view. That is, the entire lower surface of the inner portion 31 covers the entire light emitting surface 21 of the optical semiconductor element 2.

  The outer portion 32 is disposed outside the inner portion 31, and the peripheral edge of the inner portion 31 and the inner peripheral edge of the outer portion 32 are integrally continuous. The outer portion 32 has a substantially flat plate shape having a substantially rectangular frame shape in plan view, and has the same thickness (length in the vertical direction) as the inner portion 31. The outer portion 32 is disposed on the virtual surface 6. That is, the lower surface of the outer portion 32 coincides with the virtual surface 6.

  The ratio of the length in the left-right direction or the front-rear direction of the outer portion 32 and the inner portion 31 is, for example, 1: 100 to 50: 100, preferably 7: 100 to 25: 100.

  The reflective layer 4 is arranged on the outer side in the left-right direction and the outer side in the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3. The reflective layer 4 has a substantially rectangular frame shape in plan view extending in the vertical direction.

  The reflective layer 4 has an upper part 4a and a lower part 4b disposed below the upper part 4a.

  The upper portion 4a is disposed on the outer side in the left-right direction and the outer side in the front-rear direction of the phosphor layer 3, and is in contact with and covers the entire side surface of the phosphor layer 3. That is, the inner peripheral end surface of the upper portion 4 a is in contact with the entire side surface of the phosphor layer 3.

  The upper portion 4a is formed so as to include the phosphor layer 3 when projected in the left-right direction or the front-rear direction. Specifically, in the vertical direction, the upper end edge of the upper portion 4 a (the upper end edge of the reflective layer 4) coincides with the upper surface of the phosphor layer 3, and the lower end edge of the lower portion 4 b coincides with the lower surface of the phosphor layer 3. .

  The lower portion 4b is formed so that the upper end thereof is integrally continuous with the lower end of the upper portion 4a and is wider than the upper portion 4a toward the inner side in the left-right direction and the inner side in the front-rear direction. The lower portion 4b is disposed on the outer side in the left-right direction and the outer side in the front-rear direction of the optical semiconductor element 2, and is in contact with and covers the entire side surface 23 of the optical semiconductor element 2. That is, the inner peripheral end surface of the lower portion 4 b is in contact with the entire side surface 23 of the optical semiconductor element 2.

  The lower part 4b is formed so as to include the optical semiconductor element 2 when projected in the left-right direction or the front-rear direction. Specifically, in the vertical direction, the upper end edge of the lower part 4 b coincides with the light emitting surface 21 of the optical semiconductor element 2, and the lower end edge of the lower part 4 b (lower end edge of the reflective layer 4) is the facing surface of the optical semiconductor element 2. Matches 22. That is, the reflective layer 4 is formed such that its upper surface is flush with the upper surface of the phosphor layer 3 and its lower surface is flush with the lower surface of the phosphor layer 3 and the opposing surface 22 of the optical semiconductor element 2. Has been.

  The reflective layer 4 preferably satisfies the above formula (1), more preferably the above formula (1 ′), and still more preferably the above formula (1 ″).

  In the reflective layer 4, the vertical distance Y between the light emitting surface 21 of the optical semiconductor element 2 and the inner edge of the upper edge of the reflective layer 4 is the same as in the first embodiment. That is, in the second embodiment, the relational expression (2 ′) of A = Y is satisfied.

The angle θ ₂ formed by the inner edge surface of the reflective layer 4 and the lowermost surface of the phosphor layer 3 and the length of the reflective layer 4 in the left-right direction or the front-rear direction (particularly the length in the left-right direction or front-rear direction at the upper edge) D) D is the same as in the first embodiment.

  The distance B in the left-right direction or the front-rear direction from the inner edge of the lower edge of the reflective layer 4 to the edge of the facing surface 22 of the optical semiconductor element 2 is 0 μm. The distance X is the same as in the first embodiment. The distance B in the left-right direction or the front-rear direction satisfies the relational expression (3) where B <X.

<Manufacturing Method of Second Embodiment>
With reference to FIG. 7A-FIG. 7E, the manufacturing method of the element 1 with two layers of 2nd Embodiment is demonstrated. The manufacturing method of the element 1 with two layers of 2nd Embodiment is equipped with a fluorescent substance layer preparation process, an optical semiconductor element arrangement | positioning process, a fluorescent substance layer removal process, a reflection layer formation process, and a cutting process, for example.

  First, as shown in FIG. 7A, in the phosphor layer preparation step, the phosphor layer 3 is prepared.

  For example, the phosphor layer transfer sheet in the phosphor layer forming step described in the first embodiment is used.

  Next, as shown in FIG. 7B, in the optical semiconductor element arrangement step, a plurality of optical semiconductor elements 2 are arranged on the phosphor layer 3 at intervals in the left-right direction and the front-rear direction.

  Specifically, the plurality of optical semiconductor elements 2 are arranged on the phosphor layer 3 so that the upper surface of the phosphor layer 3 and the light emitting surface 21 of the optical semiconductor element 2 are in contact with each other. Thereby, the optical semiconductor element assembly 9 with a phosphor layer is obtained.

  Next, as shown in FIG. 7C, in the phosphor layer removal step, a part of the phosphor layer 3 of the phosphor layer-attached optical semiconductor element assembly 9 is removed.

  For example, as described above in the phosphor layer removing step of the first embodiment, the phosphor layer 3 is cut into a substantially grid shape in plan view using a wide dicing saw (dicing blade) 43 (see FIG. 7B). .

  Thereby, in the optical semiconductor element assembly 9 with a phosphor layer, a gap 44 is formed in a portion where the phosphor layer 3 is removed.

  Next, as shown in FIG. 7D, in the reflective layer forming step, the reflective layer 4 is formed between the gap 44 and a plurality of adjacent optical semiconductor elements 2.

  For example, as described above in the first embodiment, the transfer by the reflection layer transfer sheet or the potting by the varnish of the reflection composition is performed. Thereafter, when the phosphor layer 3 and / or the reflective layer 4 contains a thermosetting resin and is in the B-stage state or the A-stage state, the phosphor layer is further heated by, for example, an oven. 3 and / or the reflective layer 4 is cured (completely cured, C-staged).

  Thereby, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is obtained.

  Next, as shown in FIG. 7F, in the cutting step, the optical semiconductor element assembly 10 with the reflective layer and the phosphor layer is cut (separated).

  Thereby, the element 1 with two layers is obtained.

<Effect>
In the two-layered element 1 of the second embodiment, the reflective layer 4 is disposed so as to be in contact with both the optical semiconductor element 2 and the phosphor layer 3 on the outer side in the left-right direction and the outer side in the front-rear direction. . For this reason, the light emitted or reflected from the phosphor layer 3 and the side surface 23 of the optical semiconductor element 2 can be reflected upward. Therefore, directivity and front illuminance are good.

  The reflective layer 4 is in contact with the entire side surface 23 of the optical semiconductor element 2. For this reason, directivity and front illuminance are even better.

  Moreover, the element 1 with two layers satisfy | fills the relational expression (3) of B <X. Therefore, the front illuminance is even better.

  Further, the phosphor layer 3 has an outer portion 32 disposed on the virtual surface 6 extending to the outside of the optical semiconductor element 2. For this reason, the lower surface of the phosphor layer 3 is wider than the light emitting surface 21 of the optical semiconductor element 2. Therefore, when the phosphor layer 3 is disposed on the light emitting surface 21 of the optical semiconductor element 2 (see, for example, FIG. 7B), the phosphor layer 3 is assumed to be laterally or longitudinally from the light emitting surface 21 of the optical semiconductor element 2. Even if it deviates, generation | occurrence | production of the non-coating part by which the fluorescent substance layer 3 is not coat | covered by the light emission surface 21 of the optical semiconductor element 2 can be suppressed. Therefore, the outer portion 32 of the phosphor layer 3 can reliably cover the light emitting surface 21 of the optical semiconductor element 2. As a result, the positional accuracy of the phosphor layer 3 with respect to the optical semiconductor element 2 is improved in the left-right direction and the front-rear direction.

  The two-layered element 1 is a component for manufacturing an optical semiconductor device 8 such as a light-emitting diode device by being mounted on an electrode substrate 7 such as a diode substrate. Thus, it is possible to manufacture the optical semiconductor device 8 having good directivity and front illuminance while improving the positional accuracy.

  In addition, the element with two layers 1 can be checked for light emission performance (directivity, illuminance, color, etc.) by connecting it to a test device before being mounted on the electrode substrate 7. Therefore, when the optical semiconductor device 8 incompatible with the desired performance is generated, the recovery operation of the electrode substrate 7 incorporated in the optical semiconductor device 8 can be prevented in advance. This is useful as a manufacturing part.

<Modification of Second Embodiment>
In the modification of the second embodiment, the same members and steps as those of the second embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the embodiment of FIG. 6B, the side surface of the outer portion 32 of the phosphor layer 3 is formed so as to be vertical along the vertical direction. For example, as shown in FIG. The side surface of the portion 32, and thus the inner end surface of the upper portion 4 a of the reflective layer 4, can also be formed in a tapered shape that widens upward.

  The embodiment of FIG. 8 is also included in the present invention, and has the same effects as the embodiment of FIG. 1B.

  The phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4. For example, although not shown, the upper surface of the phosphor layer 3 is higher than the upper surface of the reflective layer 4. Can also be formed so as to be located on the upper side or the lower side.

  This embodiment also has the same effects as the embodiment of FIG. 1B.

  In the present invention, from the viewpoint of directivity, the embodiment in FIG. 6B (A = Y) or the embodiment in which the upper surface of the phosphor layer 3 is below the upper surface of the reflective layer 4 (A <Y) is preferable. ). That is, an embodiment that satisfies the relational expression (2) of A ≦ Y is preferable.

  In the embodiment of FIG. 6B, the upper surface of the phosphor layer 3 is exposed, but for example, as shown in FIG. 9, the diffusion layer 5 can be disposed on the upper surface of the phosphor layer 3.

  The embodiment of FIG. 9 is also included in the present invention, and has the same effects as the embodiment of FIG. 6B. From the viewpoint of further improving the directivity and the front illuminance, the embodiment of FIG. 9 is preferable.

  In the embodiment of FIG. 9, the diffusion layer 5 is formed so that the upper surface thereof is flush with the upper surface of the reflection layer 4. For example, although not shown, the diffusion layer 5 is reflected on the upper surface. It may be formed so as to be located above or below the upper surface of the layer 4.

  In the present invention, from the viewpoint of directivity, the embodiment in FIG. 9 (A + C = Y) is preferable, and the embodiment in which the upper surface of the diffusion layer 5 is located below the upper surface of the reflective layer 4 (A + C <Y). Can be mentioned. That is, an embodiment that satisfies the relational expression (4) of A + C ≦ Y is preferable.

<Third Embodiment>
With reference to FIG. 10A-FIG. 10B, 3rd Embodiment of the element 1 with two layers of this invention is described.

  In the third embodiment, the same members and steps as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIGS. 10A to 10B, the element with two layers 1 includes an optical semiconductor element 2, a phosphor layer 3, and a reflective layer 4.

  The phosphor layer 3 is arranged on the upper side and the side of the optical semiconductor element 2 so as to cover the entire light emitting surface 21 of the optical semiconductor element 2 and a part of the side surface 23. The phosphor layer 3 integrally includes an inner portion 31 disposed on the upper side of the optical semiconductor element 2 and an outer portion 32 disposed on the outer side of the inner portion 31.

  The outer portion 32 has a substantially rectangular frame shape in plan view extending in the vertical direction. The outer portion 32 includes an upper portion 32a and a lower portion 32b. The outer portion 32 includes a virtual surface 6 that extends outward in the left-right direction and the front-rear direction of the optical semiconductor element 2 along the light-emitting surface 21 between the upper portion 32 a and the lower portion 32 b.

  The lower part 32b of the outer part 32 is arranged outside the optical semiconductor element 2 so as to contact and cover the upper part of the side surface 23 of the optical semiconductor element 2. That is, the inner peripheral end surface of the lower portion 32 b is in contact with the upper portion of the side surface 23 of the optical semiconductor element 2. The upper portion 32a is formed so that the lower end thereof is integrally connected to the upper end of the lower portion 32b and is directed upward.

  The reflective layer 4 is arranged on the outer side in the left-right direction and the outer side in the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3. The reflective layer 4 has a substantially rectangular frame shape in plan view extending in the vertical direction.

  The reflective layer 4 has an upper part 4a and a lower part 4b disposed below the upper part 4a.

  The upper portion 4a is disposed on the outer side in the left-right direction and the outer side in the front-rear direction of the phosphor layer 3, and is in contact with and covers the entire side surface of the phosphor layer 3.

  The lower portion 4b is formed so that the upper end thereof is integrally continuous with the lower end of the upper portion 4a and is wider than the upper portion 4a toward the inner side in the left-right direction and the inner side in the front-rear direction. The lower part 4 b is disposed on the outer side in the left-right direction and the outer side in the front-rear direction of the optical semiconductor element 2, and contacts and covers the lower part of the side surface 23 of the optical semiconductor element 2.

<Manufacturing Method of Third Embodiment>
With reference to FIG. 11A-FIG. 11G, the manufacturing method of the element 1 with two layers of 2nd Embodiment is demonstrated. The manufacturing method of the element 1 with two layers of 3rd Embodiment is equipped with a temporary fixing sheet preparation process, a temporary fixing process, a fluorescent substance layer formation process, a fluorescent substance layer removal process, a reflective layer formation process, and a cutting process, for example.

  First, as shown in FIG. 11A, in the temporarily fixing sheet preparation step, a temporarily fixing sheet 40 is prepared in the same manner as in FIG. 2A.

  Next, as shown in FIG. 11B, in the temporary fixing step, the plurality of optical semiconductor elements 2 are temporarily fixed on the temporary fixing sheet 40 at intervals in the left-right direction and the front-rear direction, as in FIG. 2B. To do.

  Next, as illustrated in FIG. 11C, in the phosphor layer forming step, the phosphor layer 3 is disposed on the spacer 45 so as to cover the upper portion of the optical semiconductor element 2.

  Specifically, first, the spacer 45 is disposed on the temporary fixing sheet 40.

  Thereafter, a phosphor transfer sheet in which the phosphor layer 3 is disposed on the release sheet is prepared, and then the phosphor is placed on the spacer 45 so that the upper portion of the optical semiconductor element 2 is buried in the phosphor layer 3. The transfer sheet is pressed and laminated, and then the release sheet is released from the phosphor layer 3.

  Regarding the production of the phosphor transfer sheet, the phosphor layer of the phosphor transfer sheet in the third embodiment is preferably harder than the phosphor layer in the B stage state of the phosphor transfer sheet used in the first embodiment. The phosphor layer in the B-stage state with advanced is used. That is, the storage shear elastic force of the phosphor layer of the third embodiment is preferably adjusted to be higher than the storage shear elastic force of the phosphor layer of the first embodiment. As a result, as shown in FIG. 11C, only the upper part of the optical semiconductor element 2 can be covered with the phosphor layer 3, and the phosphor layer 3 is not required to support the temporary fixing sheet 40. The shape can be maintained flat.

  In this way, the entire light emitting surface 21 and the upper part of the side surface 23 of the optical semiconductor element 2 are covered with the phosphor layer 3. That is, the optical semiconductor element assembly 9 with a phosphor layer is obtained.

  Next, as shown in FIG. 11D, in the phosphor layer removing step, a part of the phosphor layer 3 of the optical semiconductor element assembly 9 with a phosphor layer is removed in the same manner as in FIG. 2D. Thereby, in the optical semiconductor element assembly 9 with a phosphor layer, a gap 44 is formed in a portion where the phosphor layer 3 is removed.

  Next, as shown in FIGS. 11E and 11F, in the reflective layer formation step, the reflective layer 4 is formed in the gap 44 and the interval 46 between the adjacent optical semiconductor elements 2.

  Specifically, for example, as shown in FIG. 11E, a protective sheet 47 is disposed on the upper surface of the optical semiconductor element assembly 9 with a phosphor layer, and then, in a vacuum sealed space 49 such as the inside of the vacuum chamber 48, An optical semiconductor element assembly 9 with a body layer is disposed, and subsequently, the varnish 4a of the reflective composition is disposed on the temporary fixing sheet 40 so as to surround the optical semiconductor element assembly 9 with a phosphor layer, Then, the vacuum state of the vacuum sealed space 49 is released and returned to atmospheric pressure. Thereby, the varnish 4a of the reflective composition flows into the gap 44 and the interval 46 due to the atmospheric pressure, and is filled.

  Thereafter, the protective sheet 47 is peeled off, and subsequently the varnish 4a of the reflective composition is heated and dried to form the reflective layer 4.

  Thereafter, when the phosphor layer 3 and / or the reflective layer 4 contains a thermosetting resin and is in the B-stage state or the A-stage state, the phosphor layer is further heated by, for example, an oven. 3 and / or the reflective layer 4 is cured (completely cured, C-staged).

  Thereby, as shown in FIG. 11F, the plurality of optical semiconductor elements 2, the phosphor layer 3, and the reflective layer 4 are laminated on the temporary fixing sheet 40. That is, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is obtained.

  Next, as shown in FIG. 11G, in the cutting step, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is cut (separated) in the same manner as in FIG. 2F.

  Subsequently, the temporary fixing sheet 40 is peeled from the optical semiconductor element 2 as indicated by a virtual line in FIG. 11G.

  Thereby, the element 1 with two layers is obtained.

  The element with two layers 1 of the third embodiment also has the same effects as the element with two layers 1 of the first embodiment. In addition, from the viewpoint of improving the light extraction efficiency, the two-layered element 1 of the first embodiment in which the phosphor layer 3 is in contact with the entire side surface 23 of the optical semiconductor element 2 is preferable.

  The phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4. For example, although not shown, the upper surface of the phosphor layer 3 is higher than the upper surface of the reflective layer 4. Can also be formed so as to be located on the upper side or the lower side.

  In the third embodiment, although not shown, the diffusion layer 5 may be provided on the phosphor layer 3.

  Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to the examples and comparative examples. Specific numerical values such as blending ratio (content ratio), physical property values, and parameters used in the following description are described in the above-mentioned “Mode for Carrying Out the Invention”, and the corresponding blending ratio (content ratio) ), Physical property values, parameters, etc. The upper limit value (numerical value defined as “less than” or “less than”) or lower limit value (number defined as “greater than” or “exceeded”) may be substituted. it can.

(Preparation of fluorescent composition)
In the fluorescent compositions of each example and each comparative example, a silicone resin (trade name “OE6635A / B”, manufactured by Toray Dow Corning Co., Ltd., refraction so as to have the same chromaticity (CIE, y = 0.31). 1.54) 34 to 45 parts by mass, phosphor (trade name “YAG432”, manufactured by Nemoto Lumimaterial) 8 to 30 parts by mass, glass (SiO ₂ / Al ₂ O ₃ / CaO / MgO = 60/20) / 15/5 (mass%), average particle diameter 20 μm, refractive index 1.55, filler 35-46 parts by mass, nano silica (fumed silica, average particle diameter 20 nm, trade name “R976S”, manufactured by Nippon Aerosil Co., Ltd. ) 1 mass part was mixed so that the whole quantity might be 100 mass parts, and the fluorescent composition was prepared.

(Preparation of reflective composition A)
65 parts by mass of silicone resin (same as above), 30 parts by mass of glass (same as above), titanium oxide (trade name “R706”, manufactured by DuPont, average particle size 0.36 μm, light reflection component), 4 parts by mass, nano silica A reflective composition A was prepared by mixing 1 part by mass (same as above).

(Preparation of reflective composition B)
Reflective composition B by mixing 39 parts by mass of silicone resin (same as above), 30 parts by mass of glass (same as above), 30 parts by mass of titanium oxide (same as above), and 1 part by mass of nanosilica (same as above) Was prepared.

(Production of diffusion layer)
39 parts by mass of silicone resin (same as above), 30 parts by mass of glass (same as above), silica (spherical fused silica, “FB-3SDC”, manufactured by Denka Co., Ltd., average particle diameter 3.4 μm, refractive index 1.45, 30 parts by mass of light diffusing inorganic particles) and 1 part by mass of nanosilica (same as above) were mixed, stirred and degassed to prepare a diffusive transparent composition (varnish).

  The diffusion transparent composition was applied on a polyester film and heated at 90 ° C. for 30 minutes to produce a semi-cured diffusion layer.

(Examples 1-10 and Comparative Examples 1-3)
As the optical semiconductor element, an LED element having a length in the left-right direction and a length in the front-rear direction (light emitting surface) of 1143 μm and a length in the vertical direction of 150 μm was used. Using the above-described fluorescent composition and reflective compositions A and B, according to FIGS. 2A to 2F, FIGS. 7A to 7E, or FIGS. 12 to 13, the shapes and dimensions described in Table 1 are obtained. Optical semiconductor elements with reflective layers and phosphor layers of Examples and Comparative Examples were manufactured. For Example 10, after preparing the phosphor layer in FIG. 7A, a semi-cured diffusion layer was placed on the lower surface of the phosphor layer, and the diffusion layer was cured in FIG. Thus, an optical semiconductor element with a reflective layer and a phosphor layer was produced. For Comparative Example 3, an optical semiconductor element with a phosphor layer was manufactured without providing a reflective layer.

  The following items were measured for each of the obtained Examples and Comparative Examples.

(Measurement of thickness)
The thicknesses of the phosphor layer and the diffusion layer were measured with a measuring meter (linear gauge, manufactured by Citizen).

(Measurement of reflectance of reflective layer)
Reflective compositions A and B were applied and cured to prepare reflective layers A and B having a thickness of 100 μm for measurement. In the reflection layers A and B for measuring the reflectance, an optical path confirmation method (wavelength) in an integrating sphere using an ultraviolet-visible near-infrared spectrophotometer (UV-vis) (“V-670”, manufactured by JASCO Corporation) The reflectance at a wavelength of 450 nm was measured in the range of 380 to 800 nm. The results are shown in Table 1.

(Measurement of light transmittance of reflection layer and diffusion layer)
The diffusion transparent composition was applied and cured to prepare a diffusion layer having a thickness of 100 μm for measurement. In the reflection layers A and B for measurement and the diffusion layer for measurement, the light transmittance (%) at a wavelength of 450 nm was measured using a spectrophotometer (U-4100, manufactured by Hitachi High-Tech).

  As a result, the light transmittance of the reflective layers A and B was 20% or less, and the light transmittance of the diffusion layer was 60% or more.

(Measurement of chromaticity)
The chromaticity (CIE, y) was measured with an instantaneous multi-photometry system (“MCPD-9800”, manufactured by Otsuka Electronics Co., Ltd.) under the following measurement conditions.

Current value: 300 mA
Voltage: 3.5V
Exposure time: 19ms
Integration count: 16 times
(Measurement of half-value angle, orientation angle, and front illumination)
The half-value angle, the orientation angle, and the front illuminance were measured with an instantaneous multi-measurement system (“MCPD-9800”, manufactured by Otsuka Electronics Co., Ltd.) under the following conditions.

Current value: 300 mA
Voltage: 3.5V
Measuring distance: 316mm
Exposure time: 300ms
Integration count: 1 time
Horizontal angle of sample setting: 90 °
Vertical angle: -90 ° to 90 °

DESCRIPTION OF SYMBOLS 1 Element with two layers 2 Optical semiconductor element 3 Phosphor layer 4 Reflective layer 5 Diffusion layer 6 Virtual surface 21 Light emitting surface 22 Opposing surface 31 Inner part 32 Outer part

Claims (8)

An optical semiconductor element having a light emitting surface and an opposing surface disposed to be opposed to the light emitting surface in the vertical direction;
A phosphor layer covering at least the light emitting surface;
A reflective layer disposed on the outer side in the orthogonal direction perpendicular to the vertical direction for both the optical semiconductor element and the phosphor layer;
The phosphor layer is
An inner portion disposed on the upper side of the optical semiconductor element;
An optical semiconductor element with a reflective layer and a phosphor layer, wherein the optical semiconductor element includes: an outer portion disposed on or including a virtual surface extending outside the optical semiconductor element along the light emitting surface; . The optical semiconductor element with a reflective layer and phosphor layer according to claim 1, wherein the following formulas (1) and (2) are satisfied.
90 ° <θ ₁ <160 ° (1)
A ≤ Y (2)
(In formula, (theta) ₁ shows the angle which the straight line which connects the edge of the said light emission surface of the said optical semiconductor element and the inner edge of the upper end edge of the said reflection layer, and the said light emission surface makes.).
A represents the vertical distance between the light emitting surface and the top surface of the phosphor layer.
Y represents the vertical distance between the light emitting surface and the inner edge of the upper edge of the reflective layer. )   3. The optical semiconductor element with a reflective layer and a phosphor layer according to claim 1, wherein the reflective layer has a reflectance of 80% or more when irradiated with light having a wavelength of 450 nm at a thickness of 100 μm. The optical semiconductor element with a reflective layer and a phosphor layer according to any one of claims 1 to 3, wherein the following formula (3) is satisfied.
B <X (3)
(In formula, B shows the distance of the edge of the said opposing surface of the said optical semiconductor element, and the inner edge of the lower end edge of the said reflection layer).
X represents the orthogonal distance between the edge of the light emitting surface of the optical semiconductor element and the outer edge of the phosphor layer on the virtual surface. )   The reflective layer according to any one of claims 1 to 4, wherein the reflective layer is in contact with the entire side surface between the light emitting surface and the opposing surface of the optical semiconductor element. An optical semiconductor element with a phosphor layer.   The said fluorescent substance layer is contacting the whole side surface between the said light emission surface and the said opposing surface in the said optical semiconductor element, The reflection layer as described in any one of Claims 1-3 characterized by the above-mentioned. And an optical semiconductor element with a phosphor layer.   The optical semiconductor element with a reflective layer and the phosphor layer according to claim 1, further comprising a diffusion layer disposed on the upper side of the phosphor layer. The optical semiconductor element with a reflective layer and a phosphor layer according to claim 7, wherein the following formula (4) is satisfied.
A + C ≦ Y (4)
(In the formula, C represents the vertical length of the diffusion layer.)

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