JP2016216767A - Mirror tron sputtering apparatus - Google Patents

Abstract

PURPOSE: To provide a mirror tron sputtering apparatus capable of easily preventing a substrate from being heated up to high temperature by radiant heat from a heated shield part only by adding a simple structure even when the shield part adjacent to a plasma generation space is heated as a whole by sputtering for a long time.CONSTITUTION: The mirror tron sputtering apparatus comprises: a vacuum vessel; each cathode part arranged in the vacuum vessel, each shield part arranged at a position on the side of the substrate to be processed of each cathode part; and each cooling pipe having water and the other coolants flowing inside and arranged so as to face the substrate to be processed in the longitudinal direction parallel or approximately parallel to the sputtering surface of each target in a portion closest to the substrate to be processed in each shield part or in the vicinity thereof.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a mirrortron sputtering apparatus, and more particularly to a mirrortron sputtering apparatus with a substrate heating suppression function capable of preventing a substrate to be processed from being damaged by radiant heat during sputtering.

  Conventionally, for example, a mirrortron sputtering apparatus (opposite target sputtering apparatus) as shown in FIG. 6 is known as a sputtering apparatus capable of performing sputtering at high speed and low temperature (see Patent Document 1). In the conventional mirrortron sputtering apparatus shown in FIG. 6, a pair of targets 109 are arranged opposite to each other in the vacuum vessel 101, and a magnet 112a for forming a magnetic field space H between the targets 109 and 109 is provided. , 112b are arranged on the back side of each target 109 so that different magnetic poles face each other, and further, the substrate to be processed 122 is placed between the targets 109, 109 so that the film formation surface faces the magnetic field space H. It is arranged on the side of the space. In such a conventional mirrortron sputtering apparatus, a gas supply pipe 119 for supplying a reactive gas such as oxygen gas or nitrogen gas is provided in the vicinity of the substrate 122, and the side between the targets 109, 109 is provided. A gas supply pipe 120 for supplying an inert gas such as argon gas is provided in the vicinity.

  In FIG. 6, 114 is a yoke joined to the end of each of the magnets 112a and 112b, 108 is a target holder for supporting each target 109, and 118 is a position on the substrate 122 side of each target holder 108. The partition wall 118 a is an opening formed at a position facing the substrate 122 of the partition wall 118. Reference numeral 116 denotes a peripheral portion of each target 109 and a target in order to prevent the target holder 108 and the like from being sputtered or to prevent sputter particles from adhering to a portion other than the film formation surface of the substrate 122. Shield portions (cathode shields) and 116a disposed on the magnetic field space H side and the partition wall 118 side (substrate 122 side) of the holder 108 are portions of the shield portions 116 facing the sputtering surfaces of the targets 109, respectively. It is the formed opening.

  When performing sputtering using such a conventional mirrortron sputtering apparatus, after evacuating the inside of the vacuum vessel 101 to supply a vacuum, an inert gas such as argon gas is supplied from the gas supply pipe 120, Thereafter, a voltage is applied to the target 109 from a DC power source (not shown) so that each target 109 serves as a cathode, and an inert gas existing between the targets 109 and 109 is ionized to be turned into plasma. The plasma generated in this manner sputters the targets 109 and 109 while reciprocating between the targets 109 and 109 while being confined in the magnetic field space H. The sputtered particles jump out of the magnetic field space H, react with a reactive gas such as oxygen gas or nitrogen gas supplied from the gas supply pipe 119, and then adhere and deposit on the surface of the substrate 122. As a result, a thin film is formed on the surface of the substrate 122.

Japanese Patent No. 3505559

  By the way, the mirrortron sputtering apparatus as described above has a structure in which the substrate is separated from the plasma generation space (the magnetic field space H in which the plasma is generated and confined), so that the substrate can be sputtered at low temperature without being exposed to the plasma. It is said that there is an advantage in certain things. However, for example, when the sputtering time becomes long, the shield part close to the plasma generation space is heated as a whole, and the substrate may be heated by the radiant heat generated from the heated shield part. When the substrate is heated to a high temperature, for example, when the substrate on which the organic film is formed is used or the substrate is made of a resin material, the organic film formed on the substrate may be modified or This causes inconveniences such as deformation of the resin material constituting the. On the other hand, when a cooling mechanism is provided in the entire shield part in order to prevent the substrate from being heated due to radiant heat from the shield part, there is a problem that the sputtering apparatus becomes complicated as a whole.

  The present invention has been made by paying attention to such problems of the prior art, and even if the shield part close to the plasma generation space is heated as a whole due to a long sputtering time, the heating is performed. A simple structure is added to the inconvenience that the substrate is heated by the radiant heat from the shield portion and the organic film formed on the substrate is modified or the resin material constituting the substrate is deformed. An object of the present invention is to provide a mirrortron sputtering apparatus with a function of suppressing substrate heating, which can be easily prevented only by this.

  In order to solve the above problems, a mirrortron sputtering apparatus with a substrate heating suppression function according to the present invention includes a vacuum vessel and each cathode portion disposed in the vacuum vessel, and a sputtering surface of each target is covered. Each cathode unit including each target holding unit that holds each target so as to face each other through a space facing the film formation surface of the processing substrate, and each magnet that uses the space between each target as a magnetic field space for confining plasma. And a mirrortron sputtering apparatus provided with each shield part disposed at a position on the substrate to be processed of each cathode part, and a cooling pipe in which water or other refrigerant is flowed. In the shield part, the part closest to the substrate to be processed or the vicinity thereof is opposed to the substrate to be processed and its longitudinal direction is the target. Along the sputtering surface in a direction parallel or a direction close thereto, those having a respective cooling pipes, which are arranged.

  Further, in the mirrortron sputtering apparatus with a substrate heating suppressing function according to the present invention, each shield part has a cross section of an L shape, an arc shape, or a shape similar to these, and the longitudinal direction of each of the shield portions is the above. A step formed so as to be along a direction parallel to or close to the sputtering surface of the target may be formed, and the cooling pipe may be disposed on the step.

  Further, in the mirrortron sputtering apparatus with a substrate heating suppression function according to the present invention, each of the shield parts, in addition to the cooling pipe (first cooling pipe) arranged on the step of the shield part, You may make it provide the 2nd cooling pipe arrange | positioned on the diagonally upper part of each said target in a shield part.

  Further, in the mirrortron sputtering apparatus with a substrate heating suppression function according to the present invention, in order to cool each target shield arranged to face each target, the target shield is positioned at the position on the magnetic field space side. You may make it further provide each target shield cooling pipe arrange | positioned so that each target shield may be opposed.

  In the present invention, the cooling pipe is arranged in a portion closest to the substrate to be processed in each shield portion or a portion in the vicinity thereof. Therefore, in the present invention, even when the sputtering time becomes long and the shield part is heated as a whole, the part closest to the substrate to be processed in the shield part and the peripheral part thereof are partially formed by the cooling pipe. Since it is cooled, it is effectively prevented that a large amount of radiant heat is radiated from the portion near the substrate to be processed in the shield portion and its peripheral portion toward the substrate. Further, since only a part of the shield part (a part close to the substrate to be processed and its peripheral part) is cooled, not the entire shield part, the apparatus does not have to be complicated as a whole. Therefore, according to the present invention, even when the sputtering time becomes long and the shield part is heated as a whole, the organic film is formed on the substrate due to the high temperature of the substrate due to the radiant heat from the part of the shield part. The simple structure that the cooling pipe is arranged in the vicinity of the substrate to be processed or in the vicinity thereof is added to the problem that the resin material constituting the substrate is deformed or the substrate is deformed. This makes it easy to prevent the entire apparatus from becoming complicated.

  Further, in the present invention, each shield part has a cross section of an L shape, an arc shape, or a shape similar thereto, and its longitudinal direction is parallel to or close to the sputtering surface of each target. When a step formed along the direction is formed and the cooling pipe is placed on this step, the cooling pipe provided in the shield portion protrudes from the shield portion toward the substrate. (In the space in which the sputtered particles move in the direction of the substrate, the cooling pipe protrudes. This protruding cooling pipe hinders the movement of the sputtered particles in the direction of the substrate). In addition to avoiding this, it is possible to make the work of attaching the cooling pipe to the shield part efficient and easy.

  Further, in the present invention, not only a cooling pipe (first cooling pipe) is disposed on the step of each shield part, but also a second part on the diagonally upper portion of each target in each shield part. When the cooling pipe is arranged, the amount of radiant heat radiated to the substrate from the portion near the substrate to be processed in the shield portion and its peripheral portion can be greatly reduced, and the temperature of the substrate can be increased. It can be surely prevented.

  Moreover, in the present invention, when each target shield cooling pipe is provided on the magnetic field space side of each target shield, even when the sputtering time is prolonged, the heating of each target shield is suppressed, It becomes possible to prevent the radiant heat from each of the target shields from affecting the substrate.

It is a partial side view which shows the outline of the mirrortron sputtering device which concerns on embodiment of this invention. It is a partial top view which shows the outline of the mirrortron sputtering device which concerns on this embodiment. It is a partial front view which shows the outline of the mirrortron sputtering device which concerns on this embodiment. It is a fragmentary perspective view which shows the outline of the mirrortron sputtering device which concerns on this embodiment. It is a graph which shows the experimental result of the temperature rise inhibitory effect which the water cooling pipe of this embodiment has by this inventor. It is a partial side view which shows the outline of the conventional mirrortron sputtering device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 is a partial side view schematically showing a mirrortron sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a partial plan view thereof, FIG. 3 is a partial front view thereof, and FIG. 4 is a partial perspective view thereof.

  1-4, 1 is a substrate as an object to be processed, 2 is a pair of targets arranged so that the respective sputtering surfaces face each other through a space H facing the film formation surface 1a of the substrate 1, A target holding unit for holding each of the targets 2. 4 for generating a magnetic field in a direction perpendicular to the sputtering surface of each target 2 so that the space between the targets 2 is a magnetic field space H having a high magnetic flux density in the peripheral portion and a low magnetic flux density in the central portion. The magnets are arranged such that different magnetic poles face each other on the outer peripheral edge of each target 2 or on the back side in the vicinity thereof (opposite the sputtering surface). 5 is a magnetic field space H side of each target 2 in order to prevent sputter particles from adhering to and depositing on the outer peripheral edge of each target 2 and the non-erosion region in the vicinity thereof, and to prevent the region from being sputtered. Each of the target shields is a substantially ring-shaped target shield in which a portion facing the erosion region of each target is an opening 5a.

  1 to 4, reference numeral 6 denotes a shield part (a part other than the target is sputtered or a part other than the substrate) disposed at a position on the substrate 1 side of the cathode part composed of each target holding part 3 and each magnet 4. , 6a is formed in a portion closest to the substrate 1 in the shield portion 6 (upper portion of each target 2 in FIG. 1). A step having an approximately L-shaped cross section, 7 is a water-cooled pipe having a quadrangular cross-section disposed on and welded to the step 6a, 7a is a pipe for circulating water as a coolant in the water-cooled pipe 7, 8 Is a water-cooled pipe having a quadrangular cross section placed on an obliquely upper portion (the vicinity of the step 6a) 6b of each target 2 in the shield portion 6 and welded and fixed thereto, 8a A pipe for circulating water as a refrigerant in the water-cooled pipe 8, 9 is a substantially ring-shaped target-shield water-cooled pipe disposed on the magnetic field space H side of the target shield 5, and 9 a is the target-shield water-cooled pipe 9. It is piping which distribute | circulates the water as a refrigerant | coolant. In the present embodiment, all the elements described with reference to FIGS. 1 to 4 are arranged in a vacuum vessel (not shown). In FIG. 3, the pipes 7a, 8a, 9a and the like are not shown.

  Next, the operation of the present embodiment will be described. When performing sputtering using the Millertron sputtering apparatus according to the present embodiment, the gas supply pipe disposed in the vicinity of the magnetic field space H and the like after evacuating the vacuum container (not shown) to make a vacuum. An inert gas such as argon gas is supplied from (not shown), and then a voltage is applied to the target 2 from a DC power source (not shown) to make each target 2 a cathode. The inert gas present in the gas is ionized and turned into plasma. The plasma generated in this manner sputters the targets 2 and 2 while reciprocating between the targets 2 and 2 while being confined in the magnetic field space H. The sputtered particles jump out of the magnetic field space H and react with a reactive gas such as oxygen gas or nitrogen gas supplied from a gas supply pipe (not shown) disposed in the vicinity of the substrate 1. It adheres and deposits on the surface of the substrate 1. Thereby, a thin film is formed on the surface of the substrate 1.

  The inventor conducted an experiment on the effect of suppressing the temperature rise of the substrate of the water-cooled pipe (see FIGS. 7 and 8 in FIG. 1) provided in the mirrortron sputtering apparatus according to the present embodiment as described above. In this experiment, when performing Cu film formation on the substrate using the apparatus of the present embodiment, depending on whether or not to flow cooling water to the water cooling pipe (see 7 and 8 in FIG. 1), Changes in the substrate temperature were confirmed. Specifically, under the film forming conditions as shown in Table 1 below, that is, when the sputtering current is sequentially changed to 5A, 10A, 15A, and 20A, the temperature of each substrate is the case of water cooling ON and water cooling OFF. Each was measured with a thermolabel and plotted on a graph. In order to make the conditions for each measurement equal, aging for 30 minutes at each current value was performed before each film formation at each sputtering current value.

  In this experimental result, as shown in FIG. 5, when cooling water is circulated through the water cooling pipe (see FIGS. 7 and 8), the cooling water is supplied to the water cooling pipe (see FIGS. 7 and 8). It was confirmed that the substrate temperature increase was effectively suppressed as compared with the case where the substrate was not circulated, and that the substrate temperature increase was largely suppressed by the effect of water cooling as the sputtering current increased.

  As described above, in the present embodiment, the cooling pipe 7 is arranged on the step 6a formed in the portion closest to the substrate 1 in each shield portion 6 and is welded and fixed. Even when the shield portion 6 is heated as a whole as a whole, at least a portion of the shield portion 6 closest to the substrate 1 and its peripheral portion (peripheral portion of the step 6a) pass through the cooling pipe 7. Since the flowing cooling water takes away the heat of the part, it is partially cooled. As a result, in this embodiment, it is effectively prevented that a large amount of radiant heat is radiated from the portion near the substrate 1 in the shield portion 6 and the peripheral portion toward the substrate 1. Therefore, according to the present embodiment, even when the sputtering time becomes long and the shield part 6 is heated as a whole, the substrate 1 is heated by the radiant heat from the part of the shield part 6, so that it is on the substrate 1. Inconvenience that the formed organic film is denatured or the resin material constituting the substrate 1 is deformed, the cooling pipe 7 is the portion of the shield portion 6 closest to the substrate 1 or its vicinity. It is possible to easily prevent the entire apparatus from being complicated only by adding a simple configuration.

  Further, in the present embodiment, each shield portion 6 has a cross section of an L shape, an arc shape, or a shape similar to these, and the longitudinal direction thereof is a direction parallel to the sputtering surface of each target or Since each step 6a formed so as to be along a direction close thereto is formed and each cooling pipe 7 is arranged on each step 6a, each cooling pipe 7 is connected to each shield portion 6 from each shield portion 6. It is possible to avoid inconveniences such as projecting in the direction of the substrate 1 and preventing the projected cooling pipes 7 from moving the sputtered particles in the direction of the substrate 1, and attaching the cooling pipes 7 to the shield portions 6. Work can be made more efficient and easier.

  Further, in the present embodiment, not only the cooling pipes 7 are arranged on the steps 6a of the shield portions 6, but also the portions 6b (the steps) obliquely above the targets 2 in the shield portions 6. Since each cooling pipe 8 is also arranged on the portion near 6a), the amount of radiant heat radiated to the substrate 1 from the portion close to the substrate 1 in each shield portion 6 and the peripheral portion thereof, Thus, the temperature of the substrate 1 can be prevented more reliably.

  Further, in the present embodiment, since each target shield cooling pipe 9 is provided on the magnetic field space H side of each target shield 5, even when the sputtering time becomes long, the target shield 5. By suppressing the heating, it is possible to prevent the radiant heat from each target shield 5 from affecting the substrate 1.

  Although the embodiment of the present invention has been described above, the present invention is not limited to the embodiment described above, and various modifications and changes can be made. For example, in the above-described embodiment, a step 6a having a substantially L-shaped cross section is formed in the upper portion of the target 2 in the shield portion 6 (the portion closest to the substrate 1), and a cooling pipe having a square cross section is formed on the step 6a. However, the present invention is not limited to this. For example, a step having an arcuate cross section is formed in the above-mentioned portion in the shield part 6, and a cooling pipe having a circular cross section is formed on the step. May be arranged and fixed.

DESCRIPTION OF SYMBOLS 1 Substrate 1a Film-forming surface 2 Target 3 Target holding part 4 Magnet 5 Target shield 5a Opening part 6 Shield part 6a Step 6b The part 7 and 8 water cooling pipe 9 of the target in the shield part Water cooling pipe 7a and 8a for target shields 9a Piping H Magnetic field space

Claims (4)

A vacuum vessel and cathodes disposed in the vacuum vessel, each holding the target such that the sputtering surface of each target faces each other through a space facing the film formation surface of the substrate to be processed Cathode portions each including magnets that make the space between each target holding portion and each target a magnetic field space for confining plasma, and each shield portion disposed at a position of each cathode portion on the substrate to be processed. A mirrortron sputtering apparatus comprising:
It is a cooling pipe in which water or other refrigerant is flowed inside, in the portion closest to the substrate to be processed in each shield part or in the vicinity thereof, and the longitudinal direction of the cooling pipe is opposed to the substrate to be processed. A mirrortron sputtering apparatus with a substrate heating suppression function, comprising cooling pipes arranged so as to be along a direction parallel to or near the sputtering surface of each target.   Each shield part has an L-shape, a circular arc shape, or a cross-section similar to these, and the longitudinal direction of the shield part is along a direction parallel to or close to the sputtering surface of each target. The mirrortron sputtering apparatus with a substrate heating suppressing function according to claim 1, wherein the formed step is formed, and the cooling pipe is disposed on the step.   In addition to the cooling pipes (first cooling pipes) arranged on the steps of the shield parts, the shield parts are arranged on portions diagonally above the targets in the shield parts. The mirrortron sputtering apparatus with a substrate heating suppression function according to claim 2, wherein the second cooling pipe is provided. In order to cool each target shield arranged to face each target, each target shield cooling pipe arranged to face each target shield at a position on the magnetic field space side of each target shield. The mirrortron sputtering apparatus with a substrate heating suppressing function according to any one of claims 1 to 3, further comprising:

Images