JP2009144236A - Evaporation source for arc ion plating device and arc ion plating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an evaporation source for an arc ion plating device, wherein the utilization efficiency of a cathode is drastically enhanced and a thin film having high surface smoothness and small residual stress is formed. <P>SOLUTION: The evaporation source 1 for the arc ion plating device is provided with a magnetic field forming means 5 having a ring-shaped magnet 3 provided around the outer periphery of the cathode 2 and also having a solenoid coil 4 provided on the rear surface of the cathode 2. The magnetic field forming means 5 is constructed so that the direction of the polarity of the ring-shaped magnet 3 is opposite to that of the solenoid coil 4, and forms a magnetic field in which the minimum value of the magnetic flux density on an optional line extending from the center toward the peripheral edge of an evaporation surface for evaporating a substance forming the cathode 2 is ≥45 Gauss and the average value of the magnetic flux densities is ≥80 Gauss. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an evaporation source for an arc ion plating apparatus for forming a thin film such as a ceramic film such as a nitride or an oxide or an amorphous carbon film, which is used for improving wear resistance of a machine part or the like. And an arc ion plating apparatus.

Conventionally, physical vapor deposition such as arc ion plating and sputtering has been used as a technique for coating thin films on the surfaces of mechanical parts, cutting tools, sliding parts, etc., for the purpose of improving wear resistance, sliding characteristics and protection functions. The law is widely used.
In particular, the arc ion plating method generates an arc on the cathode (target) surface of the evaporation source, instantaneously dissolves the material constituting the cathode, and draws the ionized material onto the surface of the substrate that is the processed material. In this method, a thin film is formed. In addition, this method is capable of forming a multi-element film such as titanium nitride aluminum (TiAlN) which has good film adhesion speed and high film formation speed and excellent heat resistance. Recently, it has become widespread as a dry surface treatment technology.

However, in general, when the magnetic flux density on the evaporation surface that evaporates the material constituting the cathode is insufficient, the current value of each arc spot increases, and coarse particles called droplets are generated from the cathode. It has been known. If this adheres to the thin film formed on the surface of the base material, the smoothness of the thin film is impaired, the life of machine parts, cutting tools, sliding parts and the like is shortened, and the appearance is deteriorated.
On the other hand, when the film is formed with a high magnetic flux density on the cathode evaporation surface, the surface smoothness of the substrate is improved, but compared with the case where the magnetic flux density on the cathode evaporation surface is low, the residual stress of the thin film is reduced. Becomes larger. As a result, there is a problem that the formed thin film is easily cracked or peeled off.

Furthermore, if the magnetic flux density distribution on the evaporation surface of the cathode is not appropriate, arc discharge itself may not occur on the evaporation surface of the cathode. Even if the arc discharge occurs stably, there is a problem that a part of the cathode is preferentially consumed due to the deviation of the arc spot, the utilization efficiency of the cathode is lowered, and the life of the cathode is remarkably deteriorated.
In order to eliminate the disadvantage of impairing the surface smoothness of the substrate due to the generation of droplets, a technology that forms a multipolar magnetic field in the vicinity of the cathode front surface, a technology that traps the droplets on the inner wall of the vacuum chamber and does not reach the substrate, A technique for selectively using an arc source and a sputtering source, and a technique for applying a magnetic field composed of magnetic lines substantially perpendicular to the evaporation surface of a cathode to a plasma generation region are disclosed (Patent Documents 1 and 3 to 5).

In addition, in order to eliminate the disadvantage of reducing the utilization efficiency of the cathode, a technique in which a magnetic field line substantially perpendicular to the evaporation surface of the cathode advances or diverges in front of the cathode, and the center and outer periphery of the cathode back are arranged. A technique is disclosed that includes a magnet and an electromagnetic coil that is arranged on the same outer diameter and coaxially as the magnet on the outer periphery of the back surface of the cathode, and controls the discharge region by changing the value of the current flowing through the electromagnetic coil (patent) Literature 2, 6).
Furthermore, the direction of the polarity of the permanent magnets arranged around the cathode is the same as the direction of the polarity of the electromagnets installed in the rear part of the cathode, and the current value that flows through the electromagnets by superimposing the magnetic fields of the permanent magnets and the electromagnets. A technique for controlling the discharge region by changing the voltage is disclosed (Patent Document 7).
JP 08-283933 A Japanese Patent Laid-Open No. 11-036063 JP 2002-030413 A JP 2003-193227 A JP 2006-104512 A JP 2007-056347 A JP-T-2004-523658

However, since none of the prior art considers the residual stress of the thin film, the thin film formed on the substrate may be cracked or peeled off.
On the other hand, in the technique of Patent Document 2, the diameter of the cathode, the inner diameter of the magnetic coil, the average value and the standard deviation of the magnetic flux density on the evaporation surface of the cathode are not disclosed. Further, in the technique of Patent Document 6, the minimum value, average value, and standard deviation of the magnetic flux density on the evaporation surface of the cathode, the variable current value flowing through the electromagnetic coil, the corresponding magnetic flux density, and the like are not clearly disclosed. Therefore, it is difficult to apply to an actual device, and it is considered difficult to dramatically improve the utilization efficiency of the cathode.

Furthermore, in the technique of Patent Document 7, a magnetic field only by a permanent magnet and a magnetic field only by an electromagnet are superposed so that the polar directions of the permanent magnet and the electromagnet are the same (comparison technique described in Patent Document 7). (The characteristics of the superposed magnetic field in the following (hereinafter simply referred to as “comparative technique”) are shown in FIG. 5).
As a result, as indicated by arrows C in FIG. 5A and arrows D in FIG. 5B, the magnetic field lines in the vicinity of the cathode repel each other and cancel each other, so the direction of the superimposed magnetic field lines is parallel to the evaporation surface of the cathode. (As shown in FIG. 5C), the magnetic flux density on the evaporation surface of the cathode becomes very small. Accordingly, the magnetic flux density on the evaporation surface of the cathode becomes insufficient, and a large amount of droplets are generated from the cathode, thereby impairing the smoothness of the thin film formed on the surface of the substrate.

Moreover, as shown by the arrow C ′ in FIG. 5A and the arrow D ′ in FIG. Each magnetic field line that faces is connected. And as FIG.5 (c) shows, since the magnetic force line mutually strengthened by connecting extends far to the base material vicinity, the magnetic flux density in the base material vicinity rises.
Therefore, the residual stress of the thin film is increased, and the formed thin film is easily cracked or peeled off.
In view of such problems, the present invention dramatically improves the utilization efficiency of the cathode in the evaporation source for the arc ion plating apparatus, and forms a thin film with high surface smoothness and low residual stress. With the goal.

In order to achieve the above object, the present invention employs the following technical means.
An evaporation source for an arc ion plating apparatus according to the present invention includes an arc ion plate provided with magnetic field forming means having a ring-shaped magnet disposed on the outer periphery of a cathode and a solenoid coil disposed on the back surface of the cathode. In the evaporation source for the coating apparatus, the magnetic field forming means is configured such that the direction of the polarity of the ring-shaped magnet is opposite to the direction of the polarity of the solenoid coil, and the evaporation surface for evaporating the material constituting the cathode is provided. A magnetic field having a minimum magnetic flux density of 45 Gauss or more and an average value of 80 Gauss or more on an arbitrary line segment extending from the center toward the periphery is formed.

As a result, the magnetic flux density distribution on the cathode evaporation surface can be made substantially uniform while maintaining the magnetic flux density on the cathode evaporation surface at a very large value. By generating a magnetic field, the movement of the arc spot can be made random. Therefore, it is possible to prevent the cathode from being reduced, and to dramatically improve the utilization efficiency and to improve the surface smoothness of the base material after the thin film is formed.
Furthermore, since the magnetic field lines hardly reach the vicinity of the base material and the magnetic flux density on the base material can be kept low, the residual stress of the thin film is reduced, and the occurrence of cracking and peeling of the formed thin film is suppressed.

Moreover, the said cathode is disk shape, It is good also considering the arbitrary line segments extended toward the periphery from the center part of the said evaporation surface as arbitrary line segments along the radial direction from the center of the said evaporation surface.
Preferably, the magnetic field forming means forms a magnetic field having a maximum value of magnetic flux density of 5 Gauss or less on a substrate disposed at a position that is 150 mm or more away from the evaporation surface of the cathode by a linear distance.
Thereby, the speed (momentum) of the substance which comprises the ionized cathode at the time of forming a thin film on the surface of a base material can be made appropriate. Therefore, it is possible to further improve the surface smoothness of the base material after the thin film is formed and to form a thin film having a very small residual stress.

More preferably, the solenoid coil is arranged so as to be coaxial with the ring-shaped magnet, and the ring-shaped magnet has a projection surface in the radial direction of the ring-shaped magnet that is projected in the radial direction of the cathode. It arrange | positions so that it may overlap with.
In this way, a ring-shaped magnet that generates a magnetic field having a high magnetic flux density at the outer peripheral portion of the cathode and a low magnetic flux density at the central portion of the cathode, and a low magnetic flux density at the outer peripheral portion of the cathode and a high magnetic flux density at the central portion of the cathode. A solenoid coil that generates a magnetic field is arranged, and the magnetic field generated by the ring-shaped magnet and the solenoid coil is superposed so that the direction of the magnetic field is perpendicular to the evaporation surface of the cathode and the magnetic flux density on the evaporation surface of the cathode is increased. Uniformity can be achieved with very large values.

Further, for an arc ion plating apparatus provided with a magnetic field forming means having a ring-shaped magnet arranged coaxially on the outer periphery of a disc-shaped cathode and a solenoid coil arranged on the back surface of the cathode. In the evaporation source, the magnetic field forming means has a minimum value of the magnetic flux density of 45 Gauss or more on an arbitrary line segment along the radial direction from the center of the evaporation surface for evaporating the material constituting the cathode, and the average value thereof is A magnetic field having a standard deviation of 80 Gauss or more and a standard deviation of 30 or less is formed.
As a result, the magnetic flux density on the evaporation surface of the cathode can be set to an appropriate value, the distribution of the magnetic flux density on the evaporation surface of the cathode can be made substantially uniform, and the movement of the arc spot can be made random. It becomes. Therefore, it is possible to prevent the cathode from being reduced, and to dramatically improve the utilization efficiency.

Preferably, the magnetic field forming means forms a magnetic field having a maximum value of magnetic flux density of 5 Gauss or less on a substrate disposed at a position that is 150 mm or more away from the evaporation surface of the cathode by a linear distance.
Thereby, the speed (momentum) of the substance which comprises the ionized cathode at the time of forming a thin film on the surface of a base material can be made appropriate. Therefore, it is possible to improve the surface smoothness of the base material after the thin film is formed and to form a thin film with a small residual stress.
More preferably, the magnetic field forming means is configured such that the polarity direction of the ring-shaped magnet is opposite to the polarity direction of the solenoid coil, and the ring-shaped magnet is in the radial direction of the ring-shaped magnet. The projection surface is disposed so as to overlap the projection surface in the radial direction of the cathode, and the solenoid coil is disposed in a ring shape and is coaxial with the cathode.

As described above, a ring-shaped magnet that generates a magnetic field having a high magnetic flux density at the outer peripheral portion of the cathode and a low magnetic flux density at the central portion of the cathode, and a low magnetic flux density at the outer peripheral portion of the cathode and a high magnetic flux density at the central portion of the cathode. A uniform magnetic field can be formed on the evaporation surface of the cathode by disposing a solenoid coil that generates a magnetic field and superimposing the magnetic fields generated by the ring-shaped magnet and the solenoid coil.
In addition, the magnetic field forming means may form a magnetic field in which an angle formed by a normal line to an evaporation surface standing at an arbitrary point on the evaporation surface of the cathode and a magnetic force line passing through the point is 20 degrees or less.

As a result, it is possible to dramatically improve the utilization efficiency of the cathode, and to form a thin film having a high surface smoothness and a small residual stress.
In order to realize the technical means described above, it is very preferable that the inner diameter of the ring-shaped magnet is not more than twice the diameter of the cathode.
The solenoid coil has an inner diameter of 0.2 times or more of the cathode diameter, and a value obtained by multiplying the current value flowing through the solenoid coil and the number of windings of the solenoid coil may be 2500 AT or more. preferable.

An arc ion plating apparatus according to the present invention is equipped with the evaporation source for the arc ion plating apparatus described above.
By using this arc ion plating apparatus, the magnetic flux density on the evaporation surface of the cathode can be optimized, the distribution thereof can be made uniform, and the utilization efficiency of the cathode can be dramatically improved. Furthermore, it becomes possible to optimize the speed (momentum) of the material constituting the ionized cathode when forming a thin film on the surface of the base material, increasing the surface smoothness of the base material after forming the thin film, and reducing the residual stress. Small thin films can be formed.

  By using the evaporation source for the arc ion plating apparatus of the present invention or the arc ion plating apparatus, the utilization efficiency of the cathode is remarkably improved, the surface smoothness of the base material is high, and the residual stress is small. Can be formed.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 2 shows an arc ion plating apparatus 6 provided with an evaporation source 1 (hereinafter referred to as evaporation source 1) for an arc ion plating apparatus according to the present invention.
The arc ion plating apparatus 6 includes a vacuum chamber 7, and a rotary table 10 that supports a base material 8 that is an object to be processed and an evaporation source 1 that is attached toward the base material 8 are disposed in the vacuum chamber 7. ing. The vacuum chamber 7 is provided with a gas introduction port 11 for introducing a reaction gas into the vacuum chamber 7 and a gas exhaust port 12 for discharging the reaction gas from the vacuum chamber 7.

In addition, the arc ion plating apparatus 6 is provided with a first bias power supply 13 that applies a negative bias to the cathode 2 and a second bias power supply 14 that applies a negative bias to the substrate 8. The positive side of 14 is connected to ground 15.
As shown in FIG. 1, the evaporation source 1 includes a disc-shaped cathode 2, magnetic field forming means 5 disposed in the vicinity of the cathode 2, and the outer peripheral portion of the cathode 2 closer to the base material 8 than the ring-shaped magnet 3. And an anode 9 disposed on the surface. The anode 9 is connected to the ground 15.
The cathode 2 is made of a material selected according to the thin film to be formed on the substrate 8 (for example, chromium (Cr), titanium (Ti), titanium aluminum (TiAl), tungsten (W), carbon (C), etc. ).

The magnetic field forming means 5 includes a ring-shaped magnet 3 arranged coaxially on the outer periphery of the cathode 2 and a ring-shaped solenoid coil 4 arranged coaxially on the back surface of the cathode 2. Have. In the magnetic field forming means 5, the ring-shaped magnet 3 and the solenoid coil 4 are arranged so that the polarity direction of the ring-shaped magnet 3 and the polarity direction of the solenoid coil 4 are opposite.
The ring-shaped magnet 3 has a magnetization direction perpendicular to the evaporation surface of the substance constituting the cathode 2, and the projection surface in the radial direction of the ring-shaped magnet 3 is the projection surface in the radial direction of the cathode 2. It is arranged to overlap. The ring-shaped magnet 3 is a permanent magnet formed of a neodymium magnet or a samarium-cobalt magnet. Further, when the inner diameter a of the ring-shaped magnet 3 is increased, the volume of the ring-shaped magnet 3 is increased and the surface magnetic flux density of the ring-shaped magnet 3 itself is increased. However, when the distance from the cathode 2 is increased, the evaporation surface of the cathode 2 is increased. The upper magnetic flux density is not sufficient. Therefore, the inner diameter a of the ring-shaped magnet 3 is set to be not less than the diameter b of the cathode 2 and not more than twice the diameter b of the cathode 2.

The ring-shaped magnet 3 is arranged on the outer periphery of the cathode 2 so as to be coaxial, and the projection surface in the radial direction of the ring-shaped magnet 3 overlaps the projection surface in the radial direction of the cathode 2. The inner diameter a of the magnet 3 does not become smaller than the diameter b of the cathode 2.
The solenoid coil 4 is a ring-shaped coil in which a conducting wire is spirally wound, and the inner diameter c is set to be 0.2 times (1/5) or more and 1.5 times or less the diameter b of the cathode 2. The magnetic flux density on the evaporation surface of the cathode 2 becomes uniform. The diameter is preferably one third or more and 1.5 times or less of the diameter b of the cathode 2, more preferably not less than the diameter b of the cathode 2 and not more than 1.5 times the diameter b of the cathode 2.

The value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 is set below 10000AT than 2500AT. In addition, Preferably it is 3500AT or more and 10,000AT or less, More preferably, it is 5000AT or more and 10,000AT or less.
Since the magnetic field forming means 5 has the above-described configuration, the combination of the magnetic field formed by the ring-shaped magnet 3 on the outer peripheral portion of the cathode 2 and the magnetic field formed by the solenoid coil 4 on the back surface of the cathode 2 The unevenness of the magnetic flux density on the evaporation surface can be reduced, and a strong magnetic field can be formed to cause arc discharge and arc splitting uniformly over the entire evaporation surface of the cathode 2.

Further, when the ring-shaped magnet 3 is installed on the back surface of the cathode 2, the arc discharge is biased by a decrease in the magnetic flux density on the evaporation surface of the cathode 2 and an increase in the angle between the normal line of the evaporation surface and the magnetic force line. When the ring-shaped magnet 3 is installed on the front surface of the cathode 2, the residual stress of the thin film is increased due to the strong magnetic field in the vicinity of the base material 8 to be described later. Is arranged so that the projection surface overlaps with the projection surface in the radial direction of the cathode 2.
By using the magnetic field forming means 5 that satisfies the above-described configuration and conditions, a magnetic field having a minimum magnetic flux density of 45 Gauss or more and 600 Gauss or less on an arbitrary line segment in the radial direction from the center of the evaporation surface of the cathode 2 is formed. In addition, the increase in magnetic flux density causes arc splitting and reduces droplets, so that the surface smoothness of the thin film on the substrate 8 is increased. The minimum value of the magnetic flux density is preferably 130 Gauss to 600 Gauss, and more preferably 350 Gauss to 600 Gauss.

Furthermore, by forming a magnetic field in which the average value of the magnetic flux density on an arbitrary line segment along the radial direction from the center of the evaporation surface of the cathode 2 is 80 Gauss or more and 700 Gauss or less, and the standard deviation thereof is 30 or less, Arc discharge occurs over the entire evaporation surface, and the utilization efficiency of the cathode 2 is improved.
Further, when the magnetic flux density in the vicinity of the substrate 8 is too high, electrons generated on the evaporation surface of the cathode 2 do not enter the anode 9 and collide with the reaction gas in the vacuum chamber 7, thereby ionizing the reaction gas. Reaction gas ions collide with the thin film on the substrate 8. For this reason, the ions of the reaction gas push in the atoms constituting the thin film on the base material 8 and enter, and further, the thin film is formed thereon, thereby causing defects in the regular atomic arrangement and increasing the residual stress.

Therefore, in order to lower the magnetic flux density on the substrate 8, a magnetic field in which the linear distance from the evaporation surface of the cathode 2 to the base material 8 is 150 mm or more and the maximum value of the magnetic flux density on the base material 8 is 0 Gauss or more and 5 Gauss or less. By forming it, the magnetic flux density near the base material 8 can be made appropriate, and a thin film with a small residual stress can be formed. The maximum value of the magnetic flux density is preferably 0 Gauss to 4 Gauss, and more preferably 0 Gauss to 3 Gauss.
However, if the evaporation surface of the cathode 2 and the base material 8 are too far apart, the material constituting the plasmaized cathode 2 does not reach the base material 8, so the distance from the evaporation surface of the cathode 2 to the base material 8 is 300 mm or less. And

Next, a film forming method using the arc ion plating apparatus 6 according to the present invention will be described.
First, after the vacuum chamber 7 is evacuated by evacuation, argon gas (Ar) or the like is introduced from the gas inlet 11. Then, impurities such as oxides on the cathode 2 and the substrate 8 are removed by sputtering, the inside of the vacuum chamber 7 is evacuated again, and then the reaction gas is introduced into the vacuum chamber 7 through the gas inlet 11. In this state, by generating an arc discharge on the cathode 2 installed in the vacuum chamber 7, the substance constituting the cathode 2 is turned into plasma and reacted with the reaction gas, so that the substrate 8 placed on the turntable 10 is placed on the substrate 8. A nitride film, an oxide film, or an amorphous carbon film is formed.

The reaction gas may be selected from hydrocarbon gases such as nitrogen gas (N ₂ ), oxygen gas (O ₂ ), and methane (CH ₄ ) according to the application, and the pressure of the reaction gas in the vacuum chamber 7 is About 1 to 7 Pa. Further, at the time of film formation, a negative voltage of 10 to 30 V is applied to the cathode 2 by the first bias power supply 13, and a negative voltage of 10 to 500 V is applied to the substrate 8 by the second bias power supply 14.

Example 1 using an evaporation source 1 for an arc ion plating apparatus according to the present invention will be described.
The cathode 2 has a diameter b of 100 mm and a thickness of 16 mm. Moreover, it is formed of titanium aluminum (TiAl) having a ratio of titanium (Ti) to aluminum (Al) of 1: 1. Further, a negative voltage of 20 V is applied to the cathode 2 using the first bias power supply 13.
The ring-shaped magnet 3 has an inner diameter a of 150 mm and a volume of 16πcm ³ . Moreover, the ring-shaped magnet 3 is formed of a neodymium magnet, its coercive force is 1800 kA / m, and its surface magnetic flux density is 12.4 kGauss.

Measurement Example 1-7 (which by applying a current of 5A to 500 times rolled wire) current value and 2500AT number of turns and a constant value the value I _n multiplied by the solenoid coil 4 to be supplied to the solenoid coil 4 and to, The inner diameter c of the solenoid coil 4 is 15, 20, 50, 100, 125, 150, 175 mm. Measurement examples 1 and 7 are comparative measurement examples, and measurement examples 2 to 6 are measurement examples according to the present invention. (In measurement example 7, the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is 45 Gauss or more, the average value is 80 Gauss or more, and the standard deviation is 30 or less, but the maximum value of the magnetic flux density on the substrate 8 is Since it is larger than 5 Gauss and the evaluation of the residual stress is rejected, in this example, Measurement Example 7 was used as a measurement example for comparison.)
Measurement example 8-14, the inner diameter c of the solenoid coil 4 and 100mm constant value, 500,1500,3500,5000 values I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4, 7500, 10000, and 12500AT. Measurement examples 8, 9, and 14 are used as comparative measurement examples, and measurement examples 10 to 13 are used as measurement examples according to the present invention.

The measurement example 15 is a conventional measurement example that does not include the ring-shaped magnet 3, and the measurement example 16 is a conventional measurement example that does not include the solenoid coil 4.
Nitriding is performed using an arc ion plating apparatus 6 in which the evaporation source 1 of measurement examples 1 to 16 is installed in a vacuum chamber 7, a negative voltage of 30 V is applied to the base material 8, and nitrogen (N ₂ ) is selected as a reaction gas. A titanium aluminum (TiAlN) film was formed. The reaction gas pressure was 6 Pa and the film formation time was 2 hours.
Table 1 shows the minimum value, average value, and standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 in the measurement examples 1 to 16 in Example 1, the surface roughness of the formed thin film, the residual stress of the thin film, and the cathode 2. It is a result of the utilization efficiency.

  Note that the maximum value of the magnetic flux density on the evaporation surface of the cathode 2 and the magnetic flux density on the substrate 8 arranged at a linear distance of 150 mm from the evaporation surface of the cathode 2 is obtained by using a magnetic field analysis software of a finite element method. Clarified by the simulation used. In addition, regarding the minimum value and the average value of the magnetic flux density on the evaporation surface of the cathode 2, the magnetic flux at each point divided by 50 in an arbitrary line segment direction along the radial direction from the center of the evaporation surface of the cathode 2 by the above-described simulation. The density is measured and calculated. Further, the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 is calculated by the equation (1) by measuring the magnetic flux density at each point described above.

Further, the magnetic flux density on the substrate 8 is inversely proportional to the square of the linear distance from the evaporation surface of the cathode 2 to the substrate 8. Therefore, the magnetic flux density at a position farther than 150 mm at a linear distance from the evaporation surface of the cathode 2 is the maximum value of the magnetic flux density on the substrate 8 arranged at a position 150 mm away from the evaporation surface of the cathode 2 at a linear distance. Smaller than.
Next, evaluation of the surface roughness of the formed thin film, the residual stress of the thin film, and the utilization efficiency of the cathode 2 will be described.
For thin film surface roughness measurement, a probe-type surface roughness meter was used to measure the arithmetic average roughness (Ra) at a measurement length of 10 mm at any five points, and the average value was evaluated. went. In view of the sliding characteristics of the machine parts for automobiles, the arithmetic average roughness is desirably 0.1 μm or less.

  Regarding the residual stress of the thin film, a film was formed on a silicon (Si) wafer having a thickness of 1 mm under the above-described conditions, and the curvature radius of the deflection of the base material 8 was measured using an optical lever. The residual stress of the thin film was calculated according to the Stoney formula shown. About the residual stress of the thin film, it was set as the pass at 2.0 GPa or less supposing peeling of the hard film | membrane for cutting tools.

  The utilization efficiency of the cathode 2 was calculated by the formula shown in the formula (3). That is, when the thickness of the cathode 2 at an arbitrary position on the cathode 2 becomes 3 mm, the use is stopped, and the used cathode 2 is filled with water so as to have the same volume as the original cathode 2, Usage efficiency was calculated by dividing the volume of water by the volume of the original cathode 2. For example, in the prior art described in Example 13 which will be described later, the usage efficiency of the cathode 2 is less than 30%, but for economic reasons, a cost reduction can be expected if it is 1.5 times that of 45% or more. And passed.

First, the magnetic field in each measurement example will be considered.
In measurement examples 1, 8 and 9, the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is less than 45 Gauss, the average value is less than 80 Gauss, the standard deviation is greater than 30, or the maximum of the magnetic flux density on the substrate 8 A magnetic field having a value greater than 5 Gauss is formed. Moreover, less than the inner diameter c of the solenoid coil 4 is 20 mm, or a value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 is less than 2500AT. Furthermore, in the measurement examples 1, 8 and 9, at least one of the surface roughness, the residual stress, and the utilization efficiency of the cathode 2 fails.

In measurement examples 7 and 14, the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is greater than 600 Gauss, the average value is greater than 700 Gauss, the standard deviation is greater than 30, or the magnetic flux density on the substrate 8 is A magnetic field having a maximum value larger than 5 Gauss is formed. Also, larger larger inner diameter c of the solenoid coil 4 is 150 mm, or a value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 is 10000AT. Furthermore, in the measurement examples 7 and 14, at least one evaluation among the surface roughness, the residual stress, and the utilization efficiency of the cathode 2 fails.

Here, when the measurement examples 1 and 7 are compared with the measurement examples 2 to 6 and the measurement examples 8, 9, and 14 are compared with the measurement examples 10 to 13, the measurement examples 2 to 6 and 10 to 13 are A magnetic field having a minimum magnetic flux density on the evaporation surface of 45 Gauss to 600 Gauss, an average value of 80 Gauss to 700 Gauss, a standard deviation of 30 or less, and a maximum magnetic flux density on the substrate 8 of 0 Gauss to 5 Gauss. It was found that if such a magnetic field can be formed, all of the evaluations of surface roughness, residual stress, and utilization efficiency of the cathode 2 are acceptable. In addition, when the inner diameter a of the ring-shaped magnet 3 is 150 mm, the inner diameter c of the solenoid coil 4 is 20 mm (the diameter b of the cathode 2) in order to form a magnetic field as in Measurement Examples 2-6 and 10-13. 0.2-fold) over 150 mm (1.5 times the diameter b of the cathode 2) or less, and the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 in the following 10000AT more 2500AT It is necessary to be. In addition, from the measurement examples 15 and 16, the magnetic fields as in the measurement examples 2 to 6 and 10 to 13 cannot be formed even when the ring-shaped magnet 3 or the solenoid coil 4 is not provided.

Next, the surface roughness of the formed thin film, the residual stress of the thin film, and the utilization efficiency of the cathode 2 will be considered.
First, when the measurement examples 1 to 16 are compared with respect to the surface roughness, it is found that the surface roughness value of the thin film decreases as the minimum value and average value of the magnetic flux density on the evaporation surface of the cathode 2 increase. It was. This is presumably because the formation of a strong magnetic field on the evaporation surface of the cathode 2 promotes the breakup of the arc spot and reduces the droplets as described above. Incidentally, according to increase the current value and the value I _n obtained by multiplying the number of turns of the solenoid coil 4 to be supplied to the solenoid coil 4, there is a tendency that the minimum value and the average value of the magnetic flux density on the evaporation surface of the cathode 2 is increased.

Further, when the measurement examples 1 to 16 are compared with respect to the residual stress, the residual stress of the thin film tends to be reduced by lowering the maximum value of the magnetic flux density on the substrate 8 that is 150 mm away from the evaporation surface of the cathode 2. I understood. This is presumably because the generation of N ³⁺ ions could be efficiently reduced by reducing the magnetic flux density in the vicinity of the substrate 8 as described above.
Note that the maximum value of the magnetic flux density on the substrate 8, the measurement Examples 1-7 Comparing the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 and 2500AT constant value When the inner diameter c of the solenoid coil 4 was changed, when the inner diameter c was 20 mm, the maximum value of the magnetic flux density on the substrate 8 separated by 150 mm was the smallest. The measurement when comparing Examples 8 to 14, the inner diameter c of the solenoid coil 4 and 100mm constant value, the case of changing the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 , the value I _n is at 5000AT, the maximum value of the magnetic flux density on the substrate 8 away 150mm becomes smallest. It has an inner diameter c of the solenoid coil 4, and by optimizing the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4, efficiently force lines of the ring-shaped magnet 3 solenoid This is probably because the coil 4 can be bent.

Further, when the measurement examples 1 to 16 are compared with respect to the utilization efficiency, it has been found that the utilization efficiency of the cathode 2 tends to improve as the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 decreases. This is considered to be due to the uniform discharge on the evaporation surface of the cathode 2 as described above.
When the measurement examples 8 to 16 are compared with respect to the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2, the inner diameter c of the solenoid coil 4 is set to a constant value of 100 mm, and the current value flowing through the solenoid coil 4 and the solenoid coil 4 when changing the value I _n obtained by multiplying the number of turns, the value I _n is at 5000AT, the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 becomes smallest. This, under the conditions that optimize the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4, the magnetic flux density is high at the outer peripheral portion of the cathode 2 by a ring-shaped magnet 3 cathode 2 The magnetic field having a low magnetic flux density at the center of the cathode 2 and the magnetic field having a low magnetic flux density at the outer periphery of the cathode 2 by the solenoid coil 4 and a magnetic field having a high magnetic flux density at the center of the cathode 2 are superposed on the evaporation surface of the cathode 2. This is because the distribution of magnetic flux density becomes flat.

  That is, as shown in FIG. 3A, in the present invention, the magnetic field property using only the ring-shaped magnet 3 has a high magnetic flux density at the outer peripheral portion of the cathode 2 and a low magnetic flux density at the central portion of the cathode 2. Further, since the magnetic field property by only the solenoid coil 4 is overlapped so that the polarities of the ring-shaped magnet 3 and the solenoid coil 4 are opposite to each other, the outer peripheral portion of the cathode 2 in the region where the magnetic flux density is positive. Thus, the magnetic flux density is low and the magnetic flux density is high at the center of the cathode 2. Therefore, the magnetic field properties when these are superposed are such that the distribution of the magnetic flux density on the evaporation surface of the cathode 2 is almost flat while the magnetic flux density remains at a high positive value.

  On the other hand, as shown in FIG. 3B, in the comparative technique, the magnetic field property using only the permanent magnet has a high magnetic flux density at the outer peripheral portion of the cathode 2 and a magnetic flux density at the central portion of the cathode 2 as in the present invention. Low. However, since the magnetic field properties of only the electromagnet are overlapped so that the polar directions of the permanent magnet and the electromagnet are the same, the magnetic flux density is low at the outer periphery of the cathode 2 in the negative magnetic flux density region. The magnetic flux density becomes high at the center of the. Therefore, the magnetic field properties when these are superposed are such that the magnetic flux density distribution on the evaporation surface of the cathode 2 is substantially flat when the magnetic flux density is substantially zero.

Therefore, the configuration of the present invention in which the polar directions of the ring-shaped magnet 3 and the solenoid coil 4 are opposite is a comparison technique in which the magnetic flux density on the evaporation surface of the cathode 2 is the same and the polar directions of the permanent magnet and the electromagnet are the same. It is possible to make uniform with a value much larger than that of the configuration.
Thereby, the generation of droplets from the cathode 2 is greatly suppressed, and the surface smoothness of the thin film on the substrate 8 can be greatly enhanced.
Further, in the present invention, the magnetic field by only the ring-shaped magnet 3 and the magnetic field by only the solenoid coil 4 are superposed so that the polar directions of the ring-shaped magnet 3 and the solenoid coil 4 are opposite (the present invention). FIG. 4 shows the properties of the superimposed magnetic fields in FIG.

As a result, as shown by the arrow A in FIG. 4A and the arrow B in FIG. 4B, the magnetic lines of force directed in the same direction (direction perpendicular to the evaporation surface of the cathode 2) in the vicinity of the cathode 2 are connected. For this reason, the direction of the magnetic field lines strengthened by overlapping is perpendicular to the evaporation surface of the cathode 2 (shown in FIG. 4C).
As a result, arc spots are generated at random, so that there is no bias in the arc spot, and the utilization efficiency of the cathode can be greatly improved.
Further, since the magnetic flux density on the evaporation surface of the cathode is increased, the generation of droplets from the cathode 2 is suppressed.

Furthermore, as indicated by arrows A ′ in FIG. 4A and arrows B ′ in FIG. 4B, the magnetic lines of force between the cathode 2 and the substrate 8 repel each other and cancel each other. Therefore, as FIG.4 (c) shows, a magnetic force line hardly reaches to the base material 8 vicinity, and the magnetic flux density on the base material 8 can be restrained low.
Therefore, the configuration of the present invention in which the polar directions of the ring-shaped magnet 3 and the solenoid coil 4 are opposite is the configuration of the comparative technique in which the magnetic flux density on the base 8 is the same and the polar directions of the permanent magnet and the electromagnet are the same. Can be greatly reduced.

Thereby, the residual stress of the thin film is reduced, and the occurrence of cracks and peeling of the formed thin film is suppressed.
In addition, about the conditions of Example 1 mentioned above, in detail, the value of the arc current flowing between the cathode 2 and the anode 9 is 150 A, the substrate temperature is 500 ° C., and between the back surface of the cathode 2 and the front surface of the solenoid coil 4. The distance is 4 mm.

Another embodiment using the evaporation source 1 for the arc ion plating apparatus according to the present invention will be described.
In Example 2, the inner diameter a of the ring-shaped magnet 3 is changed. In measurement example 17, the inner diameter a of the ring-shaped magnet 3 is 200 mm. In Measurement Example 18, the inner diameter a of the ring-shaped magnet 3 is 250 mm. Measurement example 17 is a measurement example according to the present invention, and measurement example 18 is a measurement example for comparison.
The other conditions are 100mm diameter b of the cathode 2, 100mm inner diameter c of the solenoid coil 4, the values I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 and 5000AT.

  Table 2 shows the minimum value, average value, and standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 in the measurement examples 17 and 18 in Example 2, the surface roughness of the formed thin film, the residual stress of the thin film, and the cathode 2. It is a result of the utilization efficiency. Table 2 also includes the results of Measurement Example 11 in Example 1 as a reference.

First, the magnetic field in each measurement example will be considered.
In measurement example 18, the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is greater than 600 Gauss, the average value is greater than 700 Gauss, the standard deviation is greater than 30, or the maximum value of the magnetic flux density on the substrate 8 is A magnetic field larger than 5 Gauss is formed. Further, the inner diameter a of the ring-shaped magnet 3 is larger than 200 mm. Furthermore, in the measurement example 18, at least one of the surface roughness, the residual stress, and the utilization efficiency of the cathode 2 is unacceptable.
Here, when the measurement example 18 is compared with the measurement examples 11 and 17, in the measurement examples 11 and 17, the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is 45 Gauss to 600 Gauss, and the average value is 80 Gauss to 700 Gauss. A magnetic field having a standard deviation of 30 or less and a maximum value of magnetic flux density on the substrate 8 of 0 Gauss or more and 5 Gauss or less is formed. If such a magnetic field is formed, surface roughness, residual stress, and cathode 2 are formed. It was found that all the evaluations of the utilization efficiency of the products passed. In the case the inner diameter c is 100mm solenoid coil 4, and the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 is 5000AT, a magnetic field, such as measurement example 11, 17 In order to do so, the inner diameter a of the ring-shaped magnet 3 needs to be not less than 100 mm (diameter b of the cathode 2) and not more than 200 mm (twice the diameter b of the cathode 2).

Next, the surface roughness of the formed thin film, the residual stress of the thin film, and the utilization efficiency of the cathode 2 will be considered.
As the minimum value and average value of the magnetic flux density on the evaporation surface of the cathode 2 increase, the value of the surface roughness decreases. Further, the utilization efficiency of the cathode 2 tends to be improved with a decrease in the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2. Furthermore, the residual stress of the thin film tends to be reduced by lowering the maximum value of the magnetic flux density on the substrate 8 that is 150 mm away from the evaporation surface of the cathode 2.

Example 3 is a case in which the material constituting the cathode 2 and the reactive gas are changed. In Measurement Example 19, the material constituting the cathode 2 is chromium (Cr), and the reaction gas is nitrogen gas (N ₂ ). In Measurement Example 20, the material constituting the cathode 2 is titanium (Ti), and the reaction gas is nitrogen gas (N ₂ ). In Measurement Example 21, the material constituting the cathode 2 is carbon (C), and no reaction gas is used.
The optimum conditions are the same as in measurement example 11 in Example 1, with the diameter b of the cathode 2 being 100 mm, the inner diameter a of the ring-shaped magnet 3 being 150 mm, the inner diameter c of the solenoid coil 4 being 100 mm, and the solenoid coil 4 being the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 flow is in the case of using the evaporation source 1 5000AT. The prior art is a case where the evaporation source 1 that does not have the ring-shaped magnet 3 is used as in the measurement example 15 in the first embodiment.

  Table 3 shows the minimum value, average value, and standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 in the measurement examples 19 to 21 in Example 3, the surface roughness of the formed thin film, the residual stress of the thin film, and the cathode 2. It is a result of the utilization efficiency. Table 3 also includes the results of Measurement Examples 11 and 15 in Example 1 as a reference.

From Table 3, it was found that a good thin film can be formed according to the present invention even when the material constituting the cathode 2 and the reactive gas are changed.
In addition, regarding the optimum conditions of the above-described third embodiment, in detail, the outer diameter of the solenoid coil 4 is 160 mm, and the number of turns of the solenoid coil 4 is 500.

Example 4 is a case where the value of the current passed through the solenoid coil 4, the distance between the back surface of the cathode 2 and the front surface of the solenoid coil 4, the material constituting the cathode 2, and the like are changed.
In measurement examples 22 to 24, the current values flowing through the solenoid coil 4 are set to 3, 5 and 6A so that the polarities of the solenoid coil 4 and the ring-shaped magnet 3 are reversed. The distance from the front surface is set to 14, 38, and 48 mm.
In measurement examples 25 to 27, the values of the currents flowing through the solenoid coil 4 are set to -3, -5, and -6A so that the polarities of the solenoid coil 4 and the ring-shaped magnet 3 are the same. The distance between the front surface of the coil 4 is 14, 38, and 48 mm.

In the measurement examples 28 and 29, the value of the current passed through the solenoid coil 4 and the distance between the back surface of the cathode 2 and the front surface of the solenoid coil 4 are the same as those in the measurement example 23, but the cathode 2 The substances that make up are changed. In Measurement Example 28, the material constituting the cathode 2 is chromium (Cr). In Measurement Example 29, the material constituting the cathode 2 is titanium (Ti).
Furthermore, in measurement example 30, instead of the solenoid coil 4, a disc-shaped neodymium magnet having a diameter of 10 mm and a thickness of 4 mm is disposed coaxially on the back surface of the cathode 2. The distance between the back surface of the cathode 2 and the front surface of the neodymium magnet is 4 mm.

Measurement examples 22 to 24, 28 and 29 are measurement examples according to the present invention, and measurement examples 25 to 27 and 30 are measurement examples for comparison.
The other conditions are as follows: the pressure of nitrogen (N ₂ ) as a reaction gas is 4 Pa, the substrate temperature is 550 ° C., the inner diameter c of the solenoid coil 4 is 100 mm, the outer diameter of the solenoid coil 4 is 200 mm, and the solenoid coil 4 The number of windings is 1141 times.
Table 4 shows the minimum value, the average value, and the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 in the measurement examples 22 to 30 in Example 4, the normal line at any point on the evaporation surface of the cathode, and the arbitrary point. Is the result of the angle formed by the magnetic field lines passing through and the surface roughness of the formed thin film, the residual stress of the thin film, and the utilization efficiency of the cathode 2.

First, the magnetic field in each measurement example will be considered.
In measurement examples 25 to 27, a magnetic field in which the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is greater than 600 Gauss, the average value is greater than 700 Gauss, or the maximum value of the magnetic flux density on the substrate 8 is greater than 5 Gauss. is doing. In the measurement example 30, a magnetic field in which the maximum value of the magnetic flux density on the substrate 8 is larger than 5 Gauss is formed. Furthermore, in the measurement examples 25 to 27 and 30, at least one evaluation among the surface roughness, the residual stress, and the utilization efficiency of the cathode 2 fails.

Here, when the measurement examples 25 to 27 and 30 are compared with the measurement examples 22 to 24, 28 and 29, the measurement examples 22 to 24, 28 and 29 show that the minimum value of the magnetic flux density on the evaporation surface of the cathode 2 is 45 Gauss. The magnetic field is 600 Gauss or less, the average value is 80 Gauss or more and 700 Gauss or less, the standard deviation is 30 or less, and the maximum value of the magnetic flux density on the substrate 8 is 0 Gauss or more and 5 Gauss or less. It was found that all the evaluations of the surface roughness, the residual stress, and the utilization efficiency of the cathode 2 passed if formed.
In the measurement examples 22 to 24, 28 and 29, the inner diameter a of the ring-shaped magnet 3 is not less than 100 mm (diameter b of the cathode 2) and not more than 200 mm (twice the diameter b of the cathode 2). c is not less than 20 mm (0.2 times the diameter b of the cathode 2) and not more than 150 mm (1.5 times the diameter b of the cathode 2), and is multiplied by the current value flowing through the solenoid coil 4 and the number of turns of the solenoid coil 4. the value I _n is less than or equal to 10000AT more 2500AT.

Further, from the measurement example 30, when a disc-shaped neodymium magnet is used instead of the solenoid coil 4, the magnetic fields as in the measurement examples 22 to 24, 28 and 29 cannot be formed.
Furthermore, it has been found that even when the material constituting the cathode 2 is changed, a good thin film can be formed according to the present invention.
Next, the angle between the normal to the evaporation surface set at an arbitrary point on the evaporation surface of the cathode 2 and the magnetic force line passing through that point will also be considered.
In measurement examples 25 to 27 and 30, a magnetic field in which an angle formed by a normal line to an evaporation surface set at an arbitrary point on the evaporation surface of the cathode 2 and a magnetic force line passing through the point is greater than 20 degrees is formed. The measurement examples 25 to 27, the value I _n obtained by multiplying the number of turns of the current value and the solenoid coil 4 to be supplied to the solenoid coil 4 2500AT smaller. The measurement example 30 does not have even the solenoid coil 4. Furthermore, in the measurement examples 25 to 27 and 30, at least one evaluation among the surface roughness, the residual stress, and the utilization efficiency of the cathode 2 fails.

Here, when the measurement examples 25 to 27 and 30 are compared with the measurement examples 22 to 24, 28 and 29, the measurement examples 22 to 24, 28 and 29 are evaporating surfaces set at arbitrary points on the evaporation surface of the cathode 2. The angle formed by the normal to the line and the magnetic field line passing through that point forms a magnetic field of 20 degrees or less. If at least such a magnetic field is not formed, the surface roughness, residual stress, and utilization efficiency of the cathode 2 are evaluated. I also found that not all passed.
Even if the distance between the back surface of the cathode 2 and the front surface of the solenoid coil 4 is changed, the direction of the polarity of the ring-shaped magnet 3 and the solenoid coil 4 is sufficient if the current flowing through the solenoid coil 4 is a negative value. And the angle between the normal to the evaporation surface set at an arbitrary point on the evaporation surface of the cathode 2 and the magnetic field line passing through that point is a value much larger than 20 degrees.

  Further, when the measurement examples 22 to 29 are compared with respect to the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 and the surface roughness of the thin film, the inner diameter c of the solenoid coil 4 is 100 mm and the number of turns of the solenoid coil 4 is 1141. When the current value flowing through the solenoid coil 4 and the distance between the back surface of the cathode 2 and the front surface of the solenoid coil 4 are changed, the current value flowing through the solenoid coil 4 is 5A and the back surface of the cathode 2 When the distance between the coil and the front surface of the solenoid coil 4 is 38 mm, the standard deviation of the magnetic flux density on the evaporation surface of the cathode 2 and the value of the surface roughness of the thin film were the smallest.

This is by optimizing the value of the current flowing through the solenoid coil 4 and the distance between the back surface of the cathode 2 and the front surface of the solenoid coil 4, so that However, it is considered that the magnetic flux density in the vicinity of the cathode 2 is superimposed so as to be substantially flat while maintaining a high positive value.
Finally, the surface roughness of the formed thin film, the residual stress of the thin film, and the utilization efficiency of the cathode 2 will be considered. The utilization efficiency of the cathode 2 is improved with the decrease of the standard deviation and the standard deviation. Moreover, the residual stress of the thin film is reduced by lowering the maximum value of the magnetic flux density on the substrate 8 which is 150 mm away from the evaporation surface of the cathode 2.

By the way, this invention is not limited to each embodiment mentioned above, It can change suitably according to embodiment.
The cathode 2 may have a point-symmetric shape (square, hexagon, etc.) in plan view. At that time, the ring-shaped magnet 3 and the solenoid coil 4 may not be arranged coaxially with respect to the cathode 2.
Further, the cathode 2 may have a shape having a longitudinal direction in a plan view (rectangle, ellipse, etc.).

  Regardless of the shape of the cathode 2, if the polarities of the ring-shaped magnet 3 and the solenoid coil 4 are opposite, the direction of the magnetic field lines in the vicinity of the cathode 2 is perpendicular to the evaporation surface of the cathode 2, and the magnetic flux The density becomes substantially flat while maintaining a high positive value, and at the same time, the magnetic flux density on the substrate 8 can be kept low.

  The present invention can be used as an evaporation source and an arc ion plating apparatus for an arc ion plating apparatus for forming a thin film.

It is a schematic diagram of the evaporation source for arc ion plating apparatus concerning the present invention. 1 is a schematic diagram of an arc ion plating apparatus according to the present invention. It is the figure which contrasted the magnetic flux density on the evaporation surface of a cathode of the arc ion plating apparatus which concerns on this invention and a comparison technique. It is a schematic diagram of the magnetic field property by the arc ion plating apparatus according to the present invention. It is a schematic diagram of the magnetic field property by the arc ion plating apparatus which concerns on a comparison technique.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Evaporation source for arc ion plating apparatus 2 Cathode 3 Ring-shaped magnet 4 Solenoid coil 5 Magnetic field formation means 6 Arc ion plating apparatus 7 Vacuum chamber 8 Base material 9 Anode 10 Turntable 11 Gas introduction port 12 Gas exhaust port 13 First bias power supply 14 Second bias power supply 15 Ground 16 Graph corresponding to the vertical component of the magnetic flux density in the magnetic field generated only by the ring-shaped magnet 17 Graph corresponding to the vertical component of the magnetic flux density in the magnetic field generated only by the solenoid coil 18 Ring shape A graph corresponding to the vertical component of the magnetic flux density in the magnetic field generated by the magnet and the solenoid coil 19 A graph corresponding to the vertical component of the magnetic flux density in the magnetic field generated only by the permanent magnet 20 Graph 21 and the number of turns of the current value and the solenoid coil to flow to the inner diameter I _n the solenoid coil of the permanent magnets and the diameter c solenoid coil inner diameter b cathode graph a ring-shaped magnet corresponding to the vertical component of the magnetic flux density in the magnetic field electromagnet produces Multiplied value A Direction of magnetic field lines near the cathode in a magnetic field generated only by a ring-shaped magnet B Direction of magnetic field lines near the cathode in a magnetic field generated only by a solenoid coil C Direction of magnetic field lines near the cathode in a magnetic field generated only by a permanent magnet D Electromagnet only Direction of magnetic field lines near the cathode in the magnetic field created by A ′ Direction of magnetic field lines between the cathode and the substrate in the magnetic field created only by the ring-shaped magnet B ′ Direction of magnetic field lines between the cathode and the substrate in the magnetic field created only by the solenoid coil C ′ Magnetic field lines between the cathode and the substrate in a magnetic field created only by permanent magnets Orientation of the magnetic field lines between the cathode and the substrate in the magnetic field only orientation D 'electromagnet produces

Claims (11)

In an evaporation source for an arc ion plating apparatus comprising a magnetic field forming means having a ring-shaped magnet disposed on the outer periphery of the cathode and a solenoid coil disposed on the back surface of the cathode,
The magnetic field forming means is configured such that the polarity direction of the ring-shaped magnet and the polarity direction of the solenoid coil are opposite to each other, and extends from the center of the evaporation surface for evaporating the substance constituting the cathode toward the periphery. An evaporation source for an arc ion plating apparatus, wherein a magnetic field having a minimum magnetic flux density on an arbitrary line segment of 45 Gauss or more and an average value of 80 Gauss or more is formed. The cathode is disk-shaped,
2. The arc ion plate according to claim 1, wherein an arbitrary line segment extending from a central portion of the evaporation surface toward a peripheral edge is an arbitrary line segment extending in a radial direction from the center of the evaporation surface. Vaporization source for the device.   The magnetic field forming means forms a magnetic field having a maximum value of magnetic flux density of 5 Gauss or less on a substrate disposed at a position 150 mm or more away from the evaporation surface of the cathode by a linear distance. An evaporation source for the arc ion plating apparatus according to 2. The solenoid coil is arranged so as to be coaxial with the ring-shaped magnet,
The arc according to any one of claims 1 to 3, wherein the ring-shaped magnet is arranged such that a projection surface in the radial direction of the ring-shaped magnet overlaps a projection surface in the radial direction of the cathode. Evaporation source for ion plating equipment. An evaporation source for an arc ion plating apparatus provided with a magnetic field forming means having a ring-shaped magnet arranged coaxially on the outer periphery of a disc-shaped cathode and a solenoid coil arranged on the back surface of the cathode In
The magnetic field forming means has a minimum magnetic flux density of 45 Gauss or more on an arbitrary line segment along the radial direction from the center of the evaporation surface for evaporating the material constituting the cathode, an average value of 80 Gauss or more, An evaporation source for an arc ion plating apparatus, wherein a magnetic field having a standard deviation of 30 or less is formed.   6. The magnetic field forming means forms a magnetic field having a maximum value of magnetic flux density of 5 Gauss or less on a substrate disposed at a position 150 mm or more away from the evaporation surface of the cathode by a linear distance. An evaporation source for the described arc ion plating apparatus. The magnetic field forming means is configured such that the polarity direction of the ring-shaped magnet is opposite to the polarity direction of the solenoid coil,
The ring-shaped magnet is arranged so that a projection surface in the radial direction of the ring-shaped magnet overlaps a projection surface in the radial direction of the cathode, and the solenoid coil is ring-shaped and coaxial with the cathode. The evaporation source for an arc ion plating apparatus according to claim 5, wherein the evaporation source is arranged as described above.   2. The magnetic field forming means forms a magnetic field in which an angle formed by a normal line to an evaporation surface standing at an arbitrary point on the evaporation surface of the cathode and a magnetic force line passing through the point is 20 degrees or less. 8. An evaporation source for an arc ion plating apparatus according to any one of 7 above.   The evaporation source for an arc ion plating apparatus according to any one of claims 1 to 8, wherein the inner diameter of the ring-shaped magnet is not more than twice the diameter of the cathode.   The solenoid coil has an inner diameter of 0.2 times or more of a cathode diameter, and a value obtained by multiplying a current value flowing through the solenoid coil by the number of turns of the solenoid coil is 2500 AT or more. Item 10. An evaporation source for an arc ion plating apparatus according to any one of Items 1 to 9.   An arc ion plating apparatus comprising the evaporation source for the arc ion plating apparatus according to claim 1.

Images