JP2015167171A - semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves excellent heat dissipation performance and excellent lifetime by controlling strike-slip of an insulating substrate and a thickness of a bonding material.SOLUTION: A semiconductor device comprises: a heat dissipation member where a plurality of recesses are formed; an insulating substrate which has a first conductive plate bonded to a first principal surface and a second conductive plate bonded to a second principal surface and in which the heat dissipation member is fixed to the first conductive plate by using a first bonding material; a semiconductor chip fixed to the second conductive plate of the insulating substrate by using a second bonding material; and a resin member for encapsulating the insulating substrate and the semiconductor chip. The first conductive plate has a main salient and a plurality of auxiliary salients. The plurality of auxiliary salients each of which has a height higher than that of the main salient and which are arranged around the main salient. The plurality of auxiliary salients are fit with the plurality of recesses. The first bonding material is sandwiched between the main salient and the heat dissipation member.

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device that requires heat dissipation.

  In a semiconductor device (power module) using a semiconductor chip such as an IGBT (Insulated Gate Bipolar Transistor), it is necessary to efficiently dissipate heat generated from the semiconductor chip and keep the temperature of the semiconductor chip below a predetermined temperature. For this reason, there is a power module in which a semiconductor chip is bonded to one surface of a so-called insulating substrate in which an insulating ceramic plate having high thermal conductivity and conductive plates provided on both sides thereof are integrated via a bonding material such as solder. Proposed. A heat radiating member is joined directly or indirectly to the other surface of the insulating substrate via a joining material such as solder.

  As the insulating plate of the insulating substrate, a high thermal conductive ceramic plate such as silicon nitride, aluminum nitride, or alumina is employed. A high thermal conductivity metal such as aluminum (including an aluminum alloy) or copper (including a copper alloy) is used for the conductive plate of the insulating substrate. In a semiconductor device (power module), thermal stress acts on a bonding material that joins the insulating substrate and the heat dissipation member due to a difference in thermal expansion coefficient between the insulating substrate and the heat dissipation member. Depending on the conditions of use, cracks may occur in the bonding material, and sufficient heat dissipation performance may not be maintained over the required lifetime. Many techniques have been created to prevent the occurrence of such cracks due to the action of thermal stress (for example, Patent Documents 1 to 5).

JP 2013-149695 A JP-A-4-123441 JP 2004-327737 A JP 2009-272536 A JP 2012-169319 A

  Patent Document 1 discloses a joining structure in which convex portions are provided on the joined surfaces. Cracks due to thermal stress occur in the outer peripheral portion of the bonding material as viewed from above. Since the semiconductor chip, which is a heating element, is bonded in the vicinity of the center in the top view, the amount of heat transferred to the heat sink via the bonding material is large in the center in the top view of the bonding material. In general, the material used for the conductive plate is aluminum or copper, and has a higher thermal conductivity than materials such as solder used for the bonding material. In Patent Document 1, by providing a convex structure, the bonding material on the outer side in the top view is relatively thick compared to the central part in the top view, thereby reducing the thermal stress of the bonding material and improving the heat dissipation performance of the semiconductor device. .

  However, since such a convex portion does not have a structure for constraining the insulating substrate, the insulating substrate is freely displaced in a reflow process step for joining the heat sink and the insulating substrate, and a lateral shift occurs. In addition, since such a convex part does not have a structure for controlling the thickness of the bonding material, the bonding material may be thin in a part of the outer side in a top view, and a crack caused by thermal stress occurs. There is.

  The present invention has been made to solve the above-described problems, and provides a semiconductor device having excellent heat dissipation and long life by controlling the lateral displacement of the insulating substrate and the thickness of the bonding material. Objective.

  A semiconductor device according to the present application includes a heat dissipation member in which a plurality of recesses are formed, a first conductive plate bonded to the first main surface, and a second conductive plate bonded to the second main surface. An insulating substrate fixed using a first conductive plate and a first bonding material, a second conductive plate of the insulating substrate and a semiconductor chip fixed using a second bonding material, and the insulating substrate and the semiconductor chip. A first guiding plate having a main convex portion and a plurality of auxiliary convex portions, the plurality of auxiliary convex portions being taller than the main convex portion and surrounding the main convex portion The plurality of auxiliary convex portions are individually fitted with the plurality of concave portions, and the first bonding material is interposed between the main convex portion and the heat dissipation member.

  According to the aspect of the present invention, since the lateral displacement of the insulating substrate can be prevented, an effect of improving productivity can be obtained. In addition, since the thickness of the bonding material can be controlled, it becomes possible to prevent a part of the bonding material from becoming thin, and an effect of preventing cracks can be obtained.

It is sectional drawing which shows the structure of the semiconductor device regarding embodiment. FIG. 3 is a cross-sectional view showing the junction structure of the semiconductor device according to the first embodiment. 3 is a cross-sectional view showing a top view structure of a conductive plate relating to Embodiment 1. FIG. It is a schematic diagram which shows distribution of the stress and heat flow rate in the joining structure of this invention. It is a schematic diagram which shows distribution of the stress and heat flow rate in the joining structure of a comparative example. FIG. 6 is a cross-sectional view showing a joint structure according to Embodiment 2. FIG. 10 is a cross-sectional view showing a joint structure according to Embodiment 3. FIG. 6 is a cross-sectional view showing a joint structure according to a fourth embodiment. FIG. 10 is a cross-sectional view showing a joint structure according to Embodiment 5. FIG. 10 is a cross-sectional view illustrating a joint structure according to a sixth embodiment. FIG. 10 is a cross-sectional view showing a joint structure according to Embodiment 7. FIG. 10 is a cross-sectional view illustrating a joint structure according to an eighth embodiment. 10 is a cross-sectional view showing a joint structure according to Embodiment 9. FIG. FIG. 10 is a cross-sectional view illustrating a joint structure according to a tenth embodiment. FIG. 22 is a cross-sectional view showing a joint structure according to Embodiment 11. FIG. 22 is a cross-sectional view showing a joint structure according to Embodiment 12.

  A semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings. In each figure, the same or similar components are denoted by the same reference numerals. In the drawings between the drawings, the sizes and scales of the corresponding components are independent of each other. For example, when the same components that are not changed are illustrated in cross-sectional views in which a part of the configuration is changed, the sizes and scales of the same components may be different. In addition, the configuration of the semiconductor device actually includes a plurality of members. However, for the sake of simplicity, only the portions necessary for the description are shown and the other portions are omitted.

Embodiment 1 FIG.
The semiconductor device according to the first embodiment will be described with reference to the drawings. FIG. 1 shows the overall configuration of the semiconductor device 100. The semiconductor device 100 includes a semiconductor chip 1, a heat dissipation member 7, an insulating substrate 8, a case 20, a sealing resin member 21, a bonding wire 22, a conductive terminal (or lead frame) 24, and the like. The semiconductor chip 1, the heat radiating member 7, the insulating substrate 8, the bonding wires 22, the conductive terminals 24 and the like are sealed with a sealing resin member 21. The insulating substrate 8 includes a conductive plate (or conductive pattern) 3, an insulating ceramic 4, and a conductive plate (or conductive pattern) 5. The semiconductor chip 1 includes a power transistor 1a and a power diode 1b.

  The package type semiconductor device 100 is formed by setting a work-in-process after wire bonding to a mold and pouring a thermosetting epoxy resin. As the power transistor 1a, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), or the like is used. The power transistor 1a and the power diode 1b are connected in antiparallel. The semiconductor device 100 is connected to an external device using the conductive terminal 24 or the like. The heat radiating member 7 is bonded to a single or a plurality of insulating substrates 8 by a bonding material (first bonding material) 6 such as solder. The heat dissipating member 7 serves as a heat dissipating plate of the semiconductor chip 1 and the bottom surface 7a of the heat dissipating member 7 is connected to the heat sink by heat conduction grease or the like, thereby efficiently dissipating heat generated in the semiconductor device to the outside. Let

  Below the heat radiating member 7, for example, a water jacket for liquid cooling type cooling can be provided. The semiconductor chip 1 is bonded onto the insulating substrate 8 via a die bond material (second bonding material) 2. As the die bond material 2, a bonding material that is a good conductor of heat, such as a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (such as Cu—Sn or Ag—Sn), or solder can be used. The semiconductor chip 1 and the insulating substrate 8 may be bonded by direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding. The heat radiating member 7 is fixed by using the conductive plate 5 and the bonding material 6. The semiconductor chip 1 is fixed using a conductive plate 3 of an insulating substrate 8 and a die bond material (second bonding material) 2. The sealing resin member 21 seals the insulating substrate 8 and the semiconductor chip 1.

  As the semiconductor chip 1, in addition to the one formed of silicon (Si), one formed of a wide band gap semiconductor having a band gap larger than that of silicon can be suitably used. Examples of the wide band gap semiconductor include silicon carbide (SiC), a gallium nitride material, and diamond. When a wide bandgap semiconductor is used, the allowable current density is high and the power loss is low, so that a device using the power semiconductor chip can be downsized.

  FIG. 2 is a cross-sectional view showing the junction structure of the semiconductor device according to the first embodiment. The insulating ceramic 4 (and the insulating substrate 8) are joined to the first main surface 4a serving as the back surface and the second main surface 4b serving as the front surface by the conductive plate (first conductive plate) 5 and the conductive plate (second conductive plate) 3, respectively. Has been. The insulating substrate 8 and the semiconductor chip 1 are laminated on the heat radiating member 7 with a bonding material interposed therebetween, and the heat radiating member 7, the insulating substrate 8 and the semiconductor chip 1 are bonded to each other by performing a reflow process. In the present application, when a material name such as copper or aluminum is described without any particular designation, it also includes a copper alloy or an aluminum alloy containing other additives. The insulating substrate 8 has a conductive plate 5 bonded to the first main surface 4a and a conductive plate 3 bonded to the second main surface 4b.

  The insulating substrate 8 includes a conductive plate 3 that is in contact with the die bond material 2, a conductive plate 5 that faces the heat radiating member 7, and an insulating ceramic 4 that is disposed between the conductive plate 3 and the conductive plate 5. These are integrated in advance using a brazing material or the like. For the conductive plate 3 and the conductive plate 5, good electrical and thermal conductors such as copper and aluminum can be used. When the conductive plate 3 and the conductive plate 5 are thick, the insulating ceramic 4 is broken. When the conductive plate 3 is thin, the thermal resistance increases due to the destruction of the bonding material and the spread of heat generated in the semiconductor chip. Therefore, the thickness of the conductive plate 3 and the conductive plate 5 is desirably 0.2 mm to 1.5 mm.

  As the insulating ceramic 4, a ceramic that is an electrically insulating material and is a good conductor of heat, such as silicon nitride, aluminum nitride, and alumina, can be used. As the bonding material 6, a bonding material that is a good conductor of electricity and heat, such as a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (such as Cu—Sn or Ag—Sn), or solder can be used. Since the bonding layer has thermal resistance, it is desirable that the bonding layer be as thin as possible. In order to prevent a decrease in heat dissipation, it is desirable that the thickness of the bonding layer be, for example, about 0.1 mm to 0.7 mm.

  In the semiconductor device of the present embodiment, the conductive plate 5 has a thick central portion in plan view. That is, the main plate 9 is formed on the conductive plate 5 so as to protrude from the back side of the insulating substrate 8 in the thickness direction of the insulating substrate 8. Around the main convex portion 9, a plurality of auxiliary convex portions 10 that are separated from the main convex portion 9 and function as spacers are formed. The height of the portion of the main convex portion 9 protruding from the conductive plate 5 is the length of the tip portion of the auxiliary convex portion 10 fitted into the auxiliary concave portion 11 from the height of the auxiliary convex portion 10 protruding from the conductive plate 5. Smaller than the value obtained by subtracting the thickness. The thickness of the bonding material 6 at a position in contact with the main convex portion 9 is desirably about 5% to 90% of the thickness of the bonding material 6 at a position without the main convex portion 9.

  An auxiliary recess 11 is formed at a position where the auxiliary protrusion 10 is joined to the heat dissipation member 7 where the auxiliary protrusion 10 is not formed. The auxiliary convex portion 10 is fitted in the auxiliary concave portion 11 provided at a position corresponding to the auxiliary convex portion 10. The heat radiating member 7 and the insulating substrate 8 are joined via the joining material 6 in a state where the auxiliary convex portion 10 is fitted in the auxiliary concave portion 11. The auxiliary recess 11 can be manufactured by cutting, etching, or pressing. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and the bonding material 6 is interposed between the main convex portion 9 and the heat radiating member 7.

  FIG. 3 is a cross-sectional view showing a top view structure of the conductive plate 5 relating to the first embodiment. A main projection 9 and a plurality of auxiliary projections 10 are formed on the guide plate 5. The auxiliary convex part 10 acts as a spacer. The main convex part 9 and the auxiliary convex part 10 have shapes, such as a cylinder, a triangular prism, a rectangular parallelepiped, a cone, a triangular pyramid, a quadrangular pyramid. The area of the main projection 9 is preferably 10% or more and 90% or less of the projected area of the conductive plate 5 in a top view. According to such a configuration, it is possible to prevent a lateral shift when the insulating substrate 8 and the heat radiating member 7 are joined.

  FIG. 4 is a schematic diagram showing the distribution of stress and heat flow rate in the joint structure of the present invention. According to the configuration of the present invention, even when a lateral force indicated by an arrow in the figure is applied, it is possible to prevent a lateral shift when the insulating substrate 8 and the heat radiating member 7 are joined. The thermal resistance from the semiconductor chip 1 that is a heating element to the heat radiating member 7 is small in the central portion when viewed from above, and exhibits excellent heat dissipation. Further, since the thermal stress due to the difference in linear expansion coefficient between the insulating substrate 8 and the heat radiating member 7 is absorbed by the relatively thick outer surface when viewed from above, the connection between the insulating substrate 8 and the heat radiating member 7 is performed. Reliability is ensured. Furthermore, since the thickness of the bonding material 6 is defined by the auxiliary convex portion 10 serving as a spacer, it is possible to prevent the bonding material 6 from becoming excessively thin and causing cracks.

  FIG. 5 is a schematic diagram showing the distribution of stress and heat flow rate in the joint structure of the comparative example. A plurality of auxiliary convex portions are not formed in the semiconductor device according to the comparative example. According to such a configuration of the comparative example, when a lateral force is applied at the time of joining, a lateral shift occurs between the insulating substrate 8 and the heat dissipation member 7. Since the thickness of the bonding material 6 is not specified, the bonding material 6 becomes excessively thin and cracks are likely to occur.

  The heat dissipation member 7 in which the plurality of auxiliary recesses 11 are formed also serves as a structural material. Particularly in in-vehicle applications and the like, it is necessary to set the resonance frequency to be high so that it does not resonate during actual use. Therefore, the heat radiating member 7 needs to have a certain thickness. For in-vehicle use etc., it is preferable that the heat radiating member 7 has a thickness of about 2 mm or more, and a thickness of 1 mm or more even in the case of fixed use. On the contrary, if the thickness of the heat radiating member 7 is too thick, the increase in thermal resistance becomes remarkable, so that it is desirable to set the thickness to 10 mm or less.

  In the present embodiment, the number of semiconductor chips 1 mounted is two, but a plurality of semiconductor chips of the same type or different functions such as a combination of IGBT and diode are mounted on the same insulating substrate. It may be the case. In addition, various combinations are possible, such as when a plurality of insulating substrates are mounted on the same heat radiating member, and there is no particular limitation. With respect to the material of the semiconductor chip 1, not only Si but also a so-called wide band gap semiconductor such as SiC or GaN, or mixed mounting of them can be used, and there is no particular limitation.

  A wide band gap semiconductor generally refers to a semiconductor having a forbidden band width of about 2 eV or more, and includes a group 3 nitride represented by GaN, a group 2 nitride represented by ZnO, and a group 2 chalcogenide represented by ZnSe. SiC and the like are known. In particular, a SiC chip that can be used at a larger current density than the Si chip and can reduce the chip area and further the size of the entire apparatus may have a high heat generation density because the chip area is small. Therefore, the present invention excellent in heat dissipation is suitable for a semiconductor device mounted with a SiC chip.

Embodiment 2. FIG.
FIG. 6 is a cross-sectional view showing the junction structure of the semiconductor device according to the second embodiment. In the semiconductor device of the present embodiment, the conductive plate 5 has a thick central portion in plan view. That is, the main projection 9 is formed on the guide plate 5 so as to protrude toward the heat radiating member 7. A plurality of auxiliary convex portions 10 are formed on the heat radiating member 7 so as to be separated from the periphery of the main convex portion 9. The main convex part 9 and the auxiliary convex part 10 are shapes, such as a cylinder, a triangular prism, a rectangular parallelepiped, a cone, a triangular pyramid, a quadrangular pyramid. The auxiliary convex part 10 acts as a spacer. The heat radiating member 7 is formed with a plurality of auxiliary convex portions 10.

  A plurality of auxiliary concave portions 11 are formed in the guide plate 5 at positions where the auxiliary convex portions 10 are joined. The auxiliary convex portion 10 is fitted into the auxiliary concave portion 11 provided at a position corresponding to the auxiliary convex portion 10. The heat radiating member 7 and the insulating substrate 8 are joined via the joining material 6 in a state where the auxiliary convex portion 10 is fitted in the auxiliary concave portion 11. The auxiliary recess 11 can be manufactured by cutting, etching, or pressing. According to such a configuration, it is possible to prevent a lateral shift when the insulating substrate 8 and the heat radiating member 7 are joined.

  The guide plate 5 has a main convex portion 9 and a plurality of auxiliary concave portions 11, and the plurality of auxiliary concave portions 11 are arranged around the main convex portion 9. The height of the portion of the main convex portion 9 protruding from the conductive plate 5 is the height of the auxiliary convex portion 10 fitted into the auxiliary concave portion 11 from the height of the auxiliary convex portion 10 protruding from the heat dissipation member 7. It is smaller than the value obtained by subtracting the length. The thickness of the bonding material 6 at a position in contact with the main convex portion 9 is desirably about 5% to 90% of the thickness of the bonding material 6 at a position without the main convex portion 9. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and the bonding material 6 is interposed between the main convex portion 9 and the heat radiating member 7.

Embodiment 3 FIG.
FIG. 7 is a cross-sectional view showing the junction structure of the semiconductor device according to the third embodiment. In the semiconductor device of the present embodiment, the heat radiation member 7 has a thick central portion in plan view. That is, the main projection 9 is formed on the heat radiating member 7 so as to protrude toward the conductive plate 5 of the insulating substrate 8. A plurality of auxiliary convex portions 10 are formed on the heat radiating member 7 so as to be separated from the periphery of the main convex portion 9. The main convex part 9 and the auxiliary convex part 10 are shapes, such as a cylinder, a triangular prism, a rectangular parallelepiped, a cone, a triangular pyramid, a quadrangular pyramid. The auxiliary convex part 10 acts as a spacer. The heat radiating member 7 is formed with a main convex portion 9 and a plurality of auxiliary convex portions 10.

  An auxiliary concave portion 11 is formed in the guide plate 5 at a position where the auxiliary convex portion 10 is joined. The auxiliary convex portion 10 is fitted into the auxiliary concave portion 11. The heat dissipation member 7 and the insulating substrate 8 are joined via the joining material 6 in a state where the plurality of auxiliary convex portions 10 are individually fitted into the plurality of auxiliary concave portions 11. The auxiliary recess 11 can be manufactured by cutting, etching, or pressing. According to such a configuration, it is possible to prevent a lateral shift when the insulating substrate 8 and the heat radiating member 7 are joined.

  The height of the portion of the main projection 9 protruding from the heat dissipation member 7 is the height of the portion of the auxiliary projection 10 fitted into the auxiliary recess 11 from the height of the auxiliary projection 10 protruding from the heat dissipation member 7. It is smaller than the value obtained by subtracting the length. The thickness of the bonding material 6 at a position in contact with the main convex portion 9 is desirably about 5% to 90% of the thickness of the bonding material 6 at a position without the main convex portion 9. The guide plate 5 has a plurality of auxiliary concave portions 11, and the plurality of auxiliary convex portions 10 are taller than the main convex portions 9 and are disposed around the main convex portions 9. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and a bonding material 6 is interposed between the main convex portion 9 and the conductive plate 5.

Embodiment 4 FIG.
FIG. 8 is a cross-sectional view showing the junction structure of the semiconductor device according to the fourth embodiment. In the semiconductor device of the present embodiment, the heat radiation member 7 has a thick central portion in plan view. That is, the main projection 9 is formed on the heat radiating member 7 so as to protrude toward the insulating substrate 8. A plurality of auxiliary convex portions 10 are formed on the guide plate 5 apart from the periphery of the main convex portion 9. The main convex part 9 and the auxiliary convex part 10 are shapes, such as a cylinder, a triangular prism, a rectangular parallelepiped, a cone, a triangular pyramid, and a quadrangular pyramid. The auxiliary convex part 10 acts as a spacer.

  The heat radiating member 7 is formed with a main convex portion 9 and a plurality of auxiliary concave portions 11. An auxiliary recess 11 is formed in the heat dissipation member 7 at a position where the auxiliary protrusion 10 is joined. The auxiliary convex portion 10 is fitted into the auxiliary concave portion 11. The heat radiating member 7 and the insulating substrate 8 are joined via the joining material 6 in a state where the auxiliary convex portion 10 is fitted in the auxiliary concave portion 11. The auxiliary recess 11 can be manufactured by cutting, etching, or pressing. According to such a configuration, it is possible to prevent a lateral shift when the insulating substrate 8 and the heat radiating member 7 are joined.

  The height of the portion of the main convex portion 9 protruding from the heat dissipation member 7 is the height of the auxiliary convex portion 10 fitted into the auxiliary concave portion 11 from the height of the auxiliary convex portion 10 protruding from the guide plate 5. It is smaller than the value obtained by subtracting the length. The thickness of the bonding material 6 at a position in contact with the main convex portion 9 is desirably about 5% to 90% of the thickness of the bonding material 6 at a position without the main convex portion 9. The guide plate 5 has a plurality of auxiliary convex portions 10, and the plurality of auxiliary concave portions 11 are arranged around the main convex portion 9. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and a bonding material 6 is interposed between the main convex portion 9 and the conductive plate 5.

Embodiment 5 FIG.
FIG. 9 is a cross-sectional view showing the junction structure of the semiconductor device according to the fifth embodiment. In the present embodiment, the main convex portion 9 and the auxiliary convex portion 10 of the first to fourth embodiments are separate members from the conductive plate 5 or the heat radiating member 7, and are configured as a fitting member 12 and a spacer member 13, respectively. is there. A main recess 14 is provided in the guide plate 5. The auxiliary recess 11 is provided in the heat radiating member 7 and the guide plate 5. For the fitting member 12 and the spacer member 13, it is desirable to use a metal such as aluminum or copper which is a good heat conductor. In particular, the material of the fitting member 12 can be selected without considering the brazing property with the insulating ceramic 4. For example, low-purity copper, which is low cost, is used to achieve both heat dissipation and cost. Is possible.

  The fitting member 12 and the spacer member 13 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state in which the fitting member 12 and the spacer member 13 are previously joined to the conductive plate 5. A joining method having a melting point higher than the reflow treatment temperature is used for the pre-joining of the fitting member 12 and the spacer member 13 before the reflow treatment, and the conductive plate 5 and the heat radiating member 7. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the fitting member 12 is pre-joined to the conductive plate 5, positioning is performed using the main recess 14. However, in the case of a joining method that requires a jig such as ultrasonic joining, the main recess 14 is not necessary.

  The heat radiating member 7 is formed with a plurality of auxiliary recesses 11. The plurality of spacer members 13 have a height higher than that of the fitting member 12 and are disposed around the fitting member 12. The guide plate 5 has a main recess 14, and the fitting member 12 is fitted in the main recess 14. The plurality of spacer members 13 are individually fitted with the plurality of auxiliary recesses 11, and the bonding material 6 is interposed between the fitting member 12 and the heat radiating member 7. According to such a configuration, a structure having the same effect as that of the first embodiment may be manufactured at a lower cost. Moreover, in the said embodiment, although the material of each component, material, the conditions of implementation, etc. are described, these are illustrations and are not restricted to what was described.

Embodiment 6 FIG.
FIG. 10 is a cross-sectional view showing the junction structure of the semiconductor device according to the sixth embodiment. In the present embodiment, the main convex portion 9 and the auxiliary convex portion 10 of the first to fourth embodiments are separate members from the conductive plate 5 or the heat radiating member 7, and are configured as a fitting member 12 and a spacer member 13, respectively. is there. The heat radiating member 7 is provided with a main recess 14. The auxiliary recess 11 is provided in the heat radiating member 7 and the guide plate 5. For the fitting member 12 and the spacer member 13, it is desirable to use a metal such as aluminum or copper which is a good heat conductor. In particular, the material of the fitting member 12 can be selected without considering the brazing property with the insulating ceramic 4. For example, low-purity copper, which is low cost, is used to achieve both heat dissipation and cost. Is possible.

  The fitting member 12 and the spacer member 13 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the fitting member 12 and the spacer member 13 are previously joined to the heat radiating member 7. A joining method having a melting point higher than the reflow treatment temperature is used for the pre-joining of the fitting member 12 and the spacer member 13 before the reflow treatment, and the conductive plate 5 and the heat radiating member 7. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the fitting member 12 is pre-joined to the heat radiating member 7, positioning is performed using the main recess 14. However, in the case of a joining method that requires a jig such as ultrasonic joining, the main recess 14 is not necessary.

  In the present embodiment, the heat radiating member 7 has a main recess 14 formed therein. The plurality of spacer members 13 have a height higher than that of the fitting member 12 and are disposed around the fitting member 12. The insulating substrate 8 has a conductive plate 5 bonded to the first main surface 4 a and a conductive plate 3 bonded to the second main surface 4 b, and the heat radiating member 7 is fixed using the conductive plate 5 and the bonding material 6. Yes. The semiconductor chip 1 is fixed by using the conductive plate 3 of the insulating substrate 8 and the die bond material 2. The guide plate 5 has a plurality of auxiliary recesses 11, and the fitting member 12 is fitted in the main recess 14. The plurality of spacer members 13 are individually fitted with the plurality of auxiliary recesses 11, and the bonding material 6 is interposed between the fitting member 12 and the conductive plate 5.

Embodiment 7 FIG.
FIG. 11 is a cross-sectional view showing the junction structure of the semiconductor device according to the seventh embodiment. In the present embodiment, the auxiliary convex portion 10 according to the first to fourth embodiments is a separate member from the conductive plate 5 or the heat radiating member 7, and is a spacer member 13. The heat radiating member 7 is provided with a main convex portion 9. The auxiliary recess 11 is provided in the heat radiating member 7 and the guide plate 5. It is desirable to use a metal such as aluminum or copper, which is a good heat conductor, for the spacer member 13. The spacer member 13 can be selected without considering the brazing property with the insulating ceramic 4. For example, it is possible to achieve both heat dissipation and cost by, for example, using low-cost low-purity copper. It becomes. The heat radiating member 7 is formed with a main convex portion 9. The plurality of spacer members 13 are disposed around the main convex portion 9.

  The spacer member 13 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the spacer member 13 is pre-joined with the heat radiating member 7 in advance. A joining method having a melting point higher than the reflow treatment temperature is used for the pre-joining of the spacer member 13 and the conductive plate 5 or the heat radiating member 7 before the reflow treatment. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the spacer member 13 is pre-joined to the heat radiating member 7, positioning is performed using the auxiliary recess 11 of the guide plate 5. However, in the case of a joining method that requires a jig such as ultrasonic joining, the auxiliary recess 11 of the guide plate 5 is not necessary. The guide plate 5 has a plurality of auxiliary recesses 11, and the plurality of spacer members 13 are individually fitted with the plurality of auxiliary recesses 11. A bonding material 6 is interposed between the main convex portion 9 and the conductive plate 5.

Embodiment 8 FIG.
FIG. 12 is a cross-sectional view showing the junction structure of the semiconductor device according to the eighth embodiment. In the present embodiment, the auxiliary convex portion 10 according to the first to fourth embodiments is a separate member from the conductive plate 5 or the heat radiating member 7, and is a spacer member 13. A main projection 9 is provided on the guide plate 5. The auxiliary recess 11 is provided in the heat radiating member 7 and the guide plate 5. It is desirable to use a metal such as aluminum or copper, which is a good heat conductor, for the spacer member 13. The spacer member 13 can be selected without considering the brazing property with the insulating ceramic 4. For example, it is possible to achieve both heat dissipation and cost by, for example, using low-cost low-purity copper. It becomes. The heat radiating member 7 is formed with a plurality of auxiliary recesses 11. The plurality of spacer members 13 are individually fitted with the plurality of auxiliary recesses 11.

  The spacer member 13 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the spacer member 13 is pre-joined with the conductive plate 5 in advance. A joining method having a melting point higher than the reflow treatment temperature is used for the pre-joining of the spacer member 13 and the conductive plate 5 or the heat radiating member 7 before the reflow treatment. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the spacer member 13 is pre-joined to the conductive plate 5, positioning is performed using the auxiliary recess 11 of the heat radiating member 7. However, in the case of a joining method that requires a jig such as ultrasonic joining, the auxiliary recess 11 of the heat radiating member 7 is not necessary. The guide plate 5 has a main convex portion 9, and a plurality of spacer members 13 are arranged around the main convex portion 9. A bonding material 6 is interposed between the main convex portion 9 and the heat dissipation member 7.

Embodiment 9 FIG.
FIG. 13 is a cross-sectional view showing the junction structure of the semiconductor device according to the ninth embodiment. In the present embodiment, the main convex portion 9 of the first to fourth embodiments is a member different from the conductive plate 5 or the heat radiating member 7, and is a fitting member 12. The heat radiating member 7 is provided with a main recess 14. The auxiliary recess 11 is provided in the heat dissipation member 7. The fitting member 12 is preferably made of a metal such as aluminum or copper, which is a good heat conductor. A material can be selected for the fitting member 12 without considering brazing properties with the insulating ceramic 4. For example, it is possible to achieve both heat dissipation and cost by using low-cost low-purity copper. It becomes possible. The heat radiation member 7 is formed with a main recess 14 and a plurality of auxiliary recesses 11. The fitting member 12 is fitted in the main recess 14.

  The fitting member 12 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the fitting member 12 is pre-joined with the heat radiating member 7 in advance. For the pre-joining of the fitting member 12 and the heat radiating member 7 before the reflow treatment, a joining method having a melting point higher than the reflow treatment temperature is used. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the fitting member 12 is pre-joined to the heat radiating member 7, positioning is performed using the main concave portion 14 of the heat radiating member 7. However, in the case of a joining method that requires a jig such as ultrasonic joining, the main recess 14 of the heat radiating member 7 is not necessary. The guide plate 5 has a plurality of auxiliary convex portions 10, and the plurality of auxiliary concave portions 11 are arranged around the main concave portion 14. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and the bonding material 6 is interposed between the fitting member 12 and the conductive plate 5.

Embodiment 10 FIG.
FIG. 14 is a cross-sectional view showing the junction structure of the semiconductor device according to the tenth embodiment. In the present embodiment, the main convex portion 9 of the first to fourth embodiments is a member different from the conductive plate 5 or the heat radiating member 7, and is a fitting member 12. A main recess 14 is provided in the guide plate 5. The auxiliary recess 11 is provided in the heat dissipation member 7. The fitting member 12 is preferably made of a metal such as aluminum or copper, which is a good heat conductor. A material can be selected for the fitting member 12 without considering brazing properties with the insulating ceramic 4. For example, it is possible to achieve both heat dissipation and cost by using low-cost low-purity copper. It becomes possible. The heat radiating member 7 is formed with a plurality of auxiliary recesses 11. The fitting member 12 is disposed inside the plurality of auxiliary recesses 11.

  The fitting member 12 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the fitting member 12 is previously joined to the conductive plate 5. For the pre-joining of the fitting member 12 and the conductive plate 5 before the reflow treatment, a joining method having a melting point higher than the reflow treatment temperature is used. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the fitting member 12 is pre-joined to the conductive plate 5, positioning is performed using the main concave portion 14 of the conductive plate 5. However, in the case of a joining method that requires a jig such as ultrasonic joining, the main recess 14 of the conductive plate 5 is not necessary. The guide plate 5 has a main recess 14 and a plurality of auxiliary projections 10, and the plurality of auxiliary projections 10 are arranged around the main recess 14. The fitting member 12 is fitted in the main recess 14. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and the bonding material 6 is interposed between the fitting member 12 and the heat radiating member 7.

Embodiment 11 FIG.
FIG. 15 is a cross-sectional view showing the junction structure of the semiconductor device according to the eleventh embodiment. In the present embodiment, the main convex portion 9 of the first to fourth embodiments is a member different from the conductive plate 5 or the heat radiating member 7, and is a fitting member 12. The guide plate 5 is provided with a main recess 14 and an auxiliary recess 11. The fitting member 12 is preferably made of a metal such as aluminum or copper, which is a good heat conductor. A material can be selected for the fitting member 12 without considering brazing properties with the insulating ceramic 4. For example, it is possible to achieve both heat dissipation and cost by using low-cost low-purity copper. It becomes possible. The heat radiating member 7 is formed with a plurality of auxiliary convex portions 10. The fitting member 12 is disposed inside the plurality of auxiliary convex portions 10.

  The fitting member 12 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the fitting member 12 is previously joined to the conductive plate 5. For the pre-joining of the fitting member 12 and the conductive plate 5 before the reflow treatment, a joining method having a melting point higher than the reflow treatment temperature is used. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the fitting member 12 is pre-joined to the conductive plate 5, positioning is performed using the main concave portion 14 of the conductive plate 5. However, in the case of a joining method that requires a jig such as ultrasonic joining, the main recess 14 of the conductive plate 5 is not necessary. The guide plate 5 has a main recess 14 and a plurality of auxiliary recesses 11, and the fitting member 12 is fitted in the main recess 14. The plurality of auxiliary convex portions 10 are individually fitted with the plurality of auxiliary concave portions 11, and the bonding material 6 is interposed between the fitting member 12 and the heat radiating member 7.

Embodiment 12 FIG.
FIG. 16 is a cross-sectional view showing the junction structure of the semiconductor device according to the twelfth embodiment. In the present embodiment, the main convex portion 9 of the first to fourth embodiments is a member different from the conductive plate 5 or the heat radiating member 7, and is a fitting member 12. The heat radiating member 7 is provided with a main recess 14. The auxiliary recess 11 is provided in the guide plate 5. The fitting member 12 is preferably made of a metal such as aluminum or copper, which is a good heat conductor. A material can be selected for the fitting member 12 without considering brazing properties with the insulating ceramic 4. For example, it is possible to achieve both heat dissipation and cost by using low-cost low-purity copper. It becomes possible. The heat radiating member 7 is formed with a main concave portion 14 and a plurality of auxiliary convex portions 10. The fitting member 12 is fitted in the main recess 14.

  The fitting member 12 may be subjected to a reflow process for joining the insulating substrate 8 and the heat radiating member 7 in a state where the fitting member 12 is pre-joined with the heat radiating member 7 in advance. For the pre-joining of the fitting member 12 and the heat radiating member 7 before the reflow treatment, a joining method having a melting point higher than the reflow treatment temperature is used. Specifically, it is a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material (Cu-Sn, Ag-Sn, etc.) or solder bonding. Further, direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding may be used. When the fitting member 12 is pre-joined to the heat radiating member 7, positioning is performed using the main concave portion 14 of the heat radiating member 7. However, in the case of a joining method that requires a jig such as ultrasonic joining, the main recess 14 of the heat radiating member 7 is not necessary. The guide plate 5 has a plurality of auxiliary concave portions 11, and the plurality of auxiliary convex portions 10 are individually engaged with the plurality of auxiliary concave portions 11. A bonding material 6 is interposed between the fitting member 12 and the conductive plate 5.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

DESCRIPTION OF SYMBOLS 1 Semiconductor chip, 1a Power transistor, 1b Power diode, 2 Die-bonding material, 3 Conductive plate, 4 Insulating ceramic, 4a 1st main surface, 4b 2nd main surface, 5 Conductive plate, 6 Bonding material, 7 Heat dissipation member, 7a bottom surface, 8 insulating substrate, 9 main convex portion, 10 auxiliary convex portion, 11 auxiliary concave portion, 12 fitting member, 13 spacer member, 14 main concave portion, 21 sealing resin member, 22 bonding wire, 24 conductive terminal, 20 case , 100 Semiconductor device

Claims (14)

A heat dissipating member in which a plurality of recesses are formed;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a main convex portion and a plurality of auxiliary convex portions, and the plurality of auxiliary convex portions are taller than the main convex portion and disposed around the main convex portion. ,
The plurality of auxiliary convex portions are individually fitted with the plurality of concave portions, and the first bonding material is interposed between the main convex portion and the heat dissipation member. A heat dissipating member in which a plurality of auxiliary projections are formed;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a main convex portion and a plurality of concave portions, and the plurality of concave portions are arranged around the main convex portion,
The plurality of auxiliary convex portions are individually fitted with the plurality of concave portions, and the first bonding material is interposed between the main convex portion and the heat dissipation member. A heat dissipating member in which a main convex portion and a plurality of auxiliary convex portions are formed;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a plurality of recesses, and the plurality of auxiliary projections are taller than the main projections and are arranged around the main projections,
The plurality of auxiliary convex portions are individually fitted with the plurality of concave portions, and the first bonding material is interposed between the main convex portion and the first conductive plate. A heat radiating member in which a main convex part and a plurality of concave parts are formed;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a plurality of auxiliary convex portions, and the plurality of concave portions are arranged around the main convex portion,
The plurality of auxiliary convex portions are individually fitted with the plurality of concave portions, and the first bonding material is interposed between the main convex portion and the first conductive plate. A heat dissipating member in which a plurality of auxiliary recesses are formed;
A fitting member having a first height;
A plurality of spacer members having a second height higher than the first height and disposed around the fitting member;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a main recess, and the fitting member is fitted in the main recess,
The plurality of spacer members are individually fitted with the plurality of auxiliary recesses, and the first bonding material is interposed between the fitting member and the heat dissipation member. A heat dissipating member in which a main recess is formed;
A fitting member having a first height;
A plurality of spacer members having a second height higher than the first height and disposed around the fitting member;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a plurality of auxiliary recesses, and the fitting member is fitted in the main recess,
The plurality of spacer members are individually fitted with the plurality of auxiliary recesses, and the first bonding material is interposed between the fitting member and the first conductive plate. A heat dissipating member in which a main convex portion is formed;
A plurality of spacer members disposed around the main convex portion;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a plurality of recesses, and the plurality of spacer members are individually fitted with the plurality of recesses,
The semiconductor device, wherein the first bonding material is interposed between the main convex portion and the first conductive plate. A heat dissipating member in which a plurality of recesses are formed;
A plurality of spacer members individually engaged with the plurality of recesses;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a main convex portion, and the plurality of spacer members are arranged around the main convex portion,
The semiconductor device, wherein the first bonding material is interposed between the main convex portion and the heat dissipation member. A heat dissipation member in which a main recess and a plurality of auxiliary recesses are formed;
A fitting member fitted in the main recess,
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a plurality of convex portions, and the plurality of auxiliary concave portions are arranged around the main concave portion,
The plurality of convex portions are individually fitted with the plurality of auxiliary concave portions, and the first bonding material is interposed between the fitting member and the first conductive plate. A heat dissipating member in which a plurality of auxiliary recesses are formed;
A fitting member disposed inside the plurality of auxiliary recesses;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a main recess and a plurality of projections, the plurality of projections are arranged around the main recess, and the fitting member is fitted in the main recess. And
The plurality of convex portions are individually fitted with the plurality of auxiliary concave portions, and the first bonding material is interposed between the fitting member and the heat dissipation member. A heat dissipating member formed with a plurality of convex portions;
A fitting member disposed inside the plurality of convex portions;
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a main recess and a plurality of auxiliary recesses, and the fitting member is fitted in the main recess,
The plurality of convex portions are individually fitted with the plurality of auxiliary concave portions, and the first bonding material is interposed between the fitting member and the heat dissipation member. A heat radiating member in which a main concave portion and a plurality of convex portions are formed;
A fitting member fitted in the main recess,
A first conductive plate bonded to the first main surface and a second conductive plate bonded to the second main surface, and the heat dissipation member is fixed using the first conductive plate and the first bonding material. An insulating substrate;
A semiconductor chip fixed using a second conductive plate and a second bonding material of the insulating substrate;
A resin member for sealing the insulating substrate and the semiconductor chip;
The first guide plate has a plurality of auxiliary recesses, and the plurality of protrusions are individually engaged with the plurality of auxiliary recesses,
The semiconductor device, wherein the first bonding material is interposed between the fitting member and the first conductive plate.   The semiconductor device according to claim 1, wherein at least a part of the semiconductor chip is formed of a wide band gap semiconductor.   The semiconductor device according to claim 13, wherein the wide band gap semiconductor is one of silicon carbide, a gallium nitride-based material, and diamond.