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JP2015095545A - 半導体モジュールとその製造方法 - Google Patents

半導体モジュールとその製造方法 Download PDF

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Publication number
JP2015095545A
JP2015095545A JP2013233902A JP2013233902A JP2015095545A JP 2015095545 A JP2015095545 A JP 2015095545A JP 2013233902 A JP2013233902 A JP 2013233902A JP 2013233902 A JP2013233902 A JP 2013233902A JP 2015095545 A JP2015095545 A JP 2015095545A
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JP
Japan
Prior art keywords
semiconductor element
metal plate
conductor
semiconductor
groove
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JP2013233902A
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JP2015095545A5 (ja
JP6072667B2 (ja
Inventor
泰成 日野
Yasunari Hino
泰成 日野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013233902A priority Critical patent/JP6072667B2/ja
Priority to US14/445,411 priority patent/US9698078B2/en
Priority to DE102014221636.2A priority patent/DE102014221636B4/de
Priority to CN201410645842.2A priority patent/CN104637910B/zh
Publication of JP2015095545A publication Critical patent/JP2015095545A/ja
Publication of JP2015095545A5 publication Critical patent/JP2015095545A5/ja
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Publication of JP6072667B2 publication Critical patent/JP6072667B2/ja
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Abstract

【課題】接合強度が高く高寿命な配線接続部を有する半導体モジュールおよびその製造方法の提供を目的とする。
【解決手段】本発明の半導体モジュールは、第１主面と第１主面に対向する第２主面を有し、第１主面に表面電極を、第２主面に裏面電極を、それぞれ有する半導体素子１と、半導体素子１の裏面電極に金属ナノ粒子を用いた焼結接合材２を介して電気的に接続された金属板４と、半導体素子１の表面電極に金属ナノ粒子を用いた焼結接合材２を介して電気的に接続された平板状の導体５と、を備え、金属板４および導体５には、半導体素子１との接合領域から当該接合領域の外へ連通する溝６が設けられている。
【選択図】図１

Description

この発明は、半導体モジュールに関し、特に、半導体モジュール内の配線接続における接合構造に関する。
近年、環境規制の高まりから、環境問題に配慮した高効率、省エネな半導体モジュールの需要が高まっている。半導体モジュールは、産業機器、モータを備えた家電の駆動制御機器、電気自動車、ハイブリッド自動車向けの車載制御機器、鉄道制御機器、太陽光発電の制御機器等に用いられており、高電力に対応することが求められている。特に車載制御機器や鉄道制御機器では、省エネルギーの観点や電気エネルギーの変換ロスを抑える観点から、半導体モジュールが高負荷環境下(高温度環境下)において用いられるようになっており（高Ｔｊ化）、高温度環境下でも高効率、低損失で動作することが求められている。具体的には、これまでの通常の動作温度は、Ｔｊ＝１２５、１５０℃以下であったが、今後はＴｊ＝１７５℃、２００℃以上の高温環境下での動作が想定される。
そこで、上記高温環境下で、スイッチングロスを抑制し低損失化、高温状態での高効率化を図るべく、半導体モジュールの材料、構造を見直す必要があった。特に、外部電極との配線接続部が最も劣化し易く、配線接続部の高品質、高信頼性、高寿命化の実現が大きな課題であった。
従来のはんだ材料の場合、半導体素子を金属板で挟んだサンドイッチ構造の半導体モジュールでは、半導体素子の裏面電極と表面電極の夫々に対して、加熱を伴うはんだ付けを実施していた。そのため、半導体素子の裏面電極をはんだ付けした後に表面電極をはんだ付けすると、表面電極のはんだ付けの際の加熱で半導体素子の裏面はんだが再溶融し、裏面メタライズのＮｉ食われが進展し、結果として半導体素子が剥離してしまうという問題があった。
そこで、はんだ材料に代えて金属粒子を含む焼結接合材を用いて配線接続を行う半導体モジュールがあった（例えば特許文献１参照）。
特開２００７−２１４３４０号公報
しかしながら、焼結接合材を用いる場合であっても、半導体素子の裏面電極と表面電極の夫々に対して接合工程を要する。焼結接合材は、はんだ材よりも高温度環境下で長時間の熱履歴から接合するため、半導体モジュールの各部材に熱応力が発生し、歪みや反りが生じるという問題があった。なお、焼結接合材は、周囲を表面安定剤に覆われた金属粒子が溶剤中に安定して分散した構造であり、加熱により表面安定剤（溶剤）が揮発する。従って、裏面電極の接合時に揮発した溶剤が半導体素子の表面電極に付着することにより、表面電極が汚染され、表面電極との接合部において接合品質を確保することができなかった。
そこで、本発明は上述の問題点に鑑み、接合強度が高く高寿命な配線接続部を有する半導体モジュールおよびその製造方法の提供を目的とする。
本発明の半導体モジュールは、第１主面と第１主面に対向する第２主面を有し、第１主面に表面電極を、第２主面に裏面電極を、それぞれ有する半導体素子と、半導体素子の裏面電極に金属ナノ粒子を用いた焼結接合材を介して電気的に接続された金属板と、半導体素子の表面電極に金属ナノ粒子を用いた焼結接合材を介して電気的に接続された平板状の導体と、を備え、金属板および導体には、半導体素子との接合領域から当該接合領域の外へ連通する導通経路が設けられている。
本発明の半導体モジュールは、第１主面と第１主面に対向する第２主面を有し、第１主面に表面電極を、第２主面に裏面電極を、それぞれ有する半導体素子と、半導体素子の裏面電極に金属ナノ粒子を用いた焼結接合材を介して電気的に接続された金属板と、半導体素子の表面電極に金属ナノ粒子を用いた焼結接合材を介して電気的に接続された平板状の導体と、を備え、金属板および導体には、半導体素子との接合領域から当該接合領域の外へ連通する導通経路が設けられている。したがって、接合強度が高く高寿命な配線接続部を有する半導体モジュールとなる。
実施の形態１に係る半導体モジュールの構成を示す断面図である。 実施の形態１に係る半導体モジュールの金属板の構成を示す平面図である。 実施の形態１に係る半導体モジュールの金属板の構成を示す平面図である。 実施の形態１に係る半導体モジュールの金属板の構成を示す平面図である。 実施の形態１に係る半導体モジュールの金属板の平面図である。 実施の形態１の変形例に係る半導体モジュールの構成を示す断面図である。 実施の形態２に係る半導体モジュールの構成を示す断面図である。 実施の形態２に係る半導体モジュールの導体の平面図である。 実施の形態２の変形例に係る半導体モジュールの導体の平面図である。
＜Ａ．実施の形態１＞
＜Ａ−１．構成＞
図１は、本発明の実施の形態１に係る半導体モジュール１００の構成を示す断面図である。図１において、半導体モジュール１００は、２つの半導体素子１、絶縁金属層３、金属板４、導体５、信号端子７、ワイヤ８、および封止樹脂９を備えている。
半導体素子１は、表面（第１主面）に表面電極を、裏面（第２主面）に裏面電極を備えている。ＩＧＢＴを半導体素子１とすれば、表面電極はゲート電極およびエミッタ電極であり、裏面電極はコレクタ電極である。半導体モジュール１００は半導体素子１として、ＩＧＢＴ等のスイッチング機能を有する半導体素子と、ダイオード機能を有する半導体素子と、の２種類の半導体素子を一対として用いる。なお、ＩＧＢＴの他、ＭＯＳＦＥＴや他のトランジスタを用いても良いが、以降の説明で半導体素子１はＩＧＢＴとダイオードとする。
半導体素子１の裏面電極は、焼結接合材２により金属板４と接続される。焼結接合材２は、金属ナノ粒子と金属ナノ粒子の周囲を覆う表面安定剤（溶剤）を含む。金属ナノ粒子は、直径が数ｎｍ〜１００ｎｍ前後のＡｇ、Ｃｕ、Ａｕ、Ｐｄ、Ｐｔ等であるが、本明細書では、金属粒子にＡｇを用いるものとして説明する。
金属板４は、銅または銅合金等の金属からなる厚さが約３ｍｍ以上５ｍｍ未満の板である。金属板４は、その熱伝導率が約４００Ｗ／（ｍ・Ｋ）と大きく放熱板としての機能を有しており、その電気抵抗率は約２μΩ・ｃｍと小さい。ＭＯＳＦＥＴやＩＧＢＴ等の半導体素子１は、大電流をスイッチング制御するため発熱量が大きいため、熱伝導率の高い放熱板として機能する金属板４が必要となる。また、金属板４は外部端子につながっており、半導体素子１の裏面のコレクタ電極は、金属板４を介して外部端子に電気的に接続されている。
金属板４の、半導体素子１との接合面に対向する面には、絶縁金属層３が固着される。絶縁金属層３は絶縁層と保護金属層との積層構造である。絶縁層には、窒化ホウ素やアルミナ等のフィラーが混入されたエポキシ樹脂が用いられ、熱伝導性の高い銅またはアルミ等からなる保護金属層が絶縁層に固着されている。なお、絶縁金属層３の保護金属層が金属板４と接合している。
半導体素子１が発した熱は、金属板４と絶縁金属層３を伝わって放熱される。なお、絶縁金属層３には、放熱板もしくは複数フィンを備えたヒートシンクまたは水冷フィンが接続されており、高い放熱性能または冷却性能を有している。これにより、半導体素子１の温度上昇が抑制される。
半導体素子１の表面のゲート電極は、ワイヤ８により信号端子７と接続されている。信号端子７により、半導体素子１に外部からの入力（スイッチングＯＮ／ＯＦＦ制御）及び外部制御がなされている。また、半導体素子１の表面のエミッタ電極は、外部出力につながる導体５に接続されている。導体５は、銅または銅合金からなり、厚さが約０．５ｍｍ以上２．０ｍｍ未満の平板である。
また、半導体モジュール１００の上述の構成要素は、樹脂９により封止されている。なお、図では絶縁金属層３の裏面が樹脂９から露出している。しかし、半導体モジュール１００は絶縁金属層３を備えていなくても良く、その場合は金属板４の裏面が樹脂９から露出する構成となる。
また、金属板４および絶縁金属層３に代えて、絶縁基板（例えば窒化アルミ等のセラミック基板）を用いても良い。
次に、半導体素子１の表面電極および裏面電極の接合部について説明する。従来、半導体素子の表面から外部電極への配線接続は、アルミ等の金属ワイヤを用いたワイヤボンディングにより固相接合されている。電力用半導体モジュールでは、大電流をスイッチング制御するため、金属ワイヤを複数並列に配設し、かつ、約５００μｍほどの線径の太い金属ワイヤを採用して、対処していたが、電気容量的にも接合部の寿命に関しても限界に達していた。電力半導体装置の小型化に伴い、半導体素子のサイズも小さくなるので、金属ワイヤの並列数の増加は見込めない。また、金属ワイヤの線径を大きくすると、金属ワイヤを半導体素子１の表面電極に接合する際の加圧力や振動印加力を高めなければならないが、これらの量が過大になれば半導体チップが破壊されてしまう。さらに、電力半導体装置は、配線に対するヒートサイクルやパワーサイクル等、過酷な環境下に耐えなければならない。また、電力半導体装置の仕様出力は、数百ボルト、数千ボルトと増大し続ける傾向にあるため、配線接続部においても高電流に対応し、電気抵抗を低減し、かつ上述の過酷な環境下でも、信頼性を高め高寿命化を図る必要があった。
そこで、半導体モジュール１００では、導電率の高い銅または銅合金を含む導体５と半導体素子１の表面電極とを、焼結接合材２を介して加圧および加熱することにより接合し、配線接続を行うこととした。なお、焼結接合材２は直径が数ｎｍ〜１００ｎｍ前後のＡｇ、Ｃｕ、Ａｕ、Ｐｄ、Ｐｔ等による金属粒子とその周囲を覆っている表面安定剤を含む構成である。以下では、金属粒子にＡｇを用いるものとして説明する。
半導体素子１は、ＳｉもしくはＳｉＣから作られているＭＯＳＦＥＴ、ＩＧＢＴ、またはＤｉを用いており、１辺が７ｍｍ〜１５ｍｍである。また、半導体素子１の表面電極および裏面電極にはＴｉ−Ｎｉ−Ａｕ等のメタライズが施されている。そのメタライズと金属板４および導体５が、焼結接合材２を介して接合されている。
この接合は、ナノサイズ化による融点降下を使用した低温焼結接合による。接合後の焼結接合材２はバルク材と同程度に高融点化し、高い耐熱性と信頼性が得られる。
焼結接合材２において、金属粒子Ａｇは保護膜（表面安定剤）で覆われているため互いに接合することはなく安定しているが、加熱されると表面安定剤（例えば有機物）が揮発し、金属粒子Ａｇが接合する。粒子サイズがナノレベルになると表面エネルギーによりバルク融点より低温で凝集し接合する、という焼結現象を利用するため、従来のように半導体モジュールを高温まで加熱する必要は無く、加熱による熱応力、歪み、または反りを回避することができる。
＜Ａ−２．導通経路＞
図２は金属板４の平面図であり、金属板４の半導体素子との対向面を示している。図２に示す接合領域Ａにおいて、金属板４は焼結接合材２を介して半導体素子１と接合される。また、金属板４の前記対向面には、接合領域Ａを通る溝６が形成されている。なお、図示は省略するが、導体５の半導体素子との対向面にも、半導体素子との接合領域を通る溝６が形成されている。また、溝６の深さは、導体５の厚みを超えない範囲で０．５ｍｍ以上２．０ｍｍ未満とする。
金属板４および導体５において、半導体素子との対向面に溝６を形成する理由を以下に説明する。焼結接合材２は、常温状態で金属粒子Ａｇが接合しないよう、金属粒子Ａｇの周囲に保護膜が形成されている。接合箇所の加熱および加圧を行うと、おおよそ１００〜１５０℃辺りで、その保護膜成分（特に有機溶剤）が分解し、揮発する。しかし、焼結接合材２の両面が金属板４および導体５によって挟まれている構造では、焼結接合材２の保護膜成分が揮発しても接合部の外に排出されにくいため、接合箇所に複数のポーラス（ボイド）が発生してしまう。その結果、接合強度が小さく、熱サイクル試験等の信頼性試験結果が悪く、十分な接合品質を確保することができない。
そこで、半導体モジュール１００では、金属板４および導体５の接合面に、溝６を線状に設けることで、分解、揮発した保護膜成分が溝６を通って接合部の外に排出される経路を確保することとした。これにより、ポーラス（ボイド）の少ない高品質な接合が得られ、高耐熱性を有した高信頼性の半導体モジュール１００となる。
なお、溝６は焼結接合材２の揮発成分の排出経路としての効果を奏する他、半導体素子１の接合部を樹脂９で封止する際に、アンカー効果によって金属板４および導体５の樹脂９に対する密着性を向上させる効果も奏する。また、溝６により樹脂９との接合面積が確保されることから、半導体モジュールのチップサイズの縮小が可能で、低コスト化にもつながる。
図２には、金属板４の半導体素子との対向面の全面に亘って、縦方向（図２の上下方向）と横方向（図２の左右方向）に形成された直線状の溝６を示している。しかし、溝６は、焼結接合材２の揮発成分を接合部の外に排出する経路として設けられるものであるため、接合領域Ａから接合領域Ａの外へ連通する導通経路であればよい。従って、溝６は接合領域Ａを通って延在して形成されている限り、図３に示すように金属板４の縦方向にのみ形成されていても良いし、金属板４の横方向にのみ形成されていても良い（図示せず）。これにより、溝６の形成時間を抑制し、コストを抑制することができる。
また、溝６は金属板４の半導体素子との対向面の全面に亘って形成される必要はなく、図４に示すように、接合領域Ａを通る溝６（以下、「第１溝」とも称する）のみを形成しても良い。言い換えれば、接合領域Ａを通って延在する直線状の溝が通過しない領域（図４の領域Ｂ）には、溝６が形成されない。これにより、溝６の加工時間が短縮され、金属板４の製造コストが抑えられる。
金属板４の半導体素子との対向面に形成される溝６のうち、接合領域Ａを通過しない溝（以下、「第２溝」とも称する）は、樹脂９とのアンカー効果を奏するが、焼結接合材２の揮発成分を排出する経路としては機能しない。そこで、図５に示すように、接合領域Ａを通過する第１溝の幅は、接合領域Ａを通過しない第２溝の幅（約０．２〜０．５ｍｍ）の１．５〜３倍にしても良い。そうすれば、溶剤が多く揮発成分量が多い焼結接合材２を用いて接合する場合でも、溶剤を揮発させることが出来るため、ポーラス(ボイド)発生を抑制し、結果として、高品質な接合、しいては高信頼性の半導体モジュールを得ることができる。なお、第１溝の幅を最大で第２溝の幅の３倍としているのは、これ以上溝幅を大きくするとアンカー効果がなくなり、樹脂９の密着性が低下するためである。
なお、上記では、金属板４の半導体素子１との対向面に形成される溝６について説明したが、導体５の半導体素子１との対向面にも、同様の溝６が形成され、同様の効果を奏する。
＜Ａ−３．製造工程＞
半導体モジュール１００の製造方法について説明する。まず、金属板４上の接合領域Ａにペースト状の焼結接合材２を印刷または塗布する。その後、マウンター等の搭載機により半導体素子１を金属板４に搭載する。さらに、半導体素子１の表面（第１主面）上に焼結接合材２を塗布し、その上に導体５を搭載する。
次に、金属板４および導体５を一括して加熱および加圧し、半導体素子１に接合する。このときの温度は２００℃〜３５０℃であり、加圧力は８ＭＰａ〜４０Ｍｐａである。加熱および加圧時間は、１０〜１２０分である。接合後の接合部（焼結接合材２）の厚さは、２０〜２００μｍ程度である。
金属板４および導体５を半導体素子１に接合した後、Ａｌから成るワイヤ８にて、半導体素子１の表面電極のうち、導体５と接続したものとは別の表面電極と信号端子７とをウェッジボンドで配線接続する。
次に、絶縁金属層３を金属板４の半導体素子１に対向する面と反対側の面に接合し、樹脂９にて全体をモールドする。このとき、絶縁金属層３の裏面と、金属板４および導体５の一部は、樹脂９から露出するようにする。
半導体素子１の表面電極を平板状の導体５と接合し、裏面電極を金属板４と接合することにより、上記のように表面電極と裏面電極の配線接続を一括して（１工程）にて行うことができる。焼結接合材２は、周囲を表面安定剤に覆われた金属粒子が溶剤中に安定して分散した構造であり、加熱により表面安定剤（溶剤）が揮発する。従って、裏面電極の接合を行った後に表面電極の接合を行うと、裏面電極の接合時に揮発した溶剤が半導体素子１の表面電極に付着することにより、表面電極が汚染され、表面電極との接合部において接合品質を確保することができなかった。しかし、表面電極と裏面電極とを一括接合することにより、高品質な接合を得ることができ、信頼性の高い半導体モジュール１００が得られる。
なお、上記の説明でペースト状の焼結接合材２を用いるとしたが、ペレット（固形）状の焼結接合材２を用いても良い。
＜Ａ−４．変形例＞
図１に示した半導体モジュール１００では、導体５の半導体素子１との対向面と反対側の面（上面）が樹脂９から露出していない。しかし、図６に示す半導体モジュール１０１のように、導体５の上面が樹脂９から露出しても良い。金属板４と同様に大きな熱容量をもち放熱（冷却）機能を有する導体５を樹脂９から露出させ、放熱グリス材やろう材を介してフィン付きの冷却器もしくは水冷式の冷却器（図示せず）を導体５に取り付けることにより、半導体素子１の表面および裏面の両方から放熱、冷却できる。これにより、温度による半導体素子１のスイッチングロスを抑制することができ、省エネ、高効率化を図ることができる。
＜Ａ−５．効果＞
実施の形態１の半導体モジュール１００，１０１は、第１主面と第１主面に対向する第２主面を有し、第１主面に表面電極を、第２主面に裏面電極を、それぞれ有する半導体素子１と、半導体素子１の裏面電極に金属ナノ粒子を用いた焼結接合材２を介して電気的に接続された金属板４と、半導体素子１の表面電極に金属ナノ粒子を用いた焼結接合材２を介して電気的に接続された平板状の導体５と、を備えている。そして、金属板４および導体５には、半導体素子１との接合領域Ａから接合領域Ａの外へ連通する導通経路が設けられている。よって、半導体素子１と金属板４および導体５を接合する際に、焼結接合材２の揮発成分が導通経路によって接合領域Ａの外に排出されるため、ポーラス（ボイド）の少ない高品質な接合が得られ、高耐熱性を有した高信頼性の半導体モジュールとなる。
また、金属板４および導体５の、半導体素子１との対向面に溝６が形成され、導通経路は、溝６のうち、半導体素子１との接合領域を通って延在する第１溝を含むものとすれば、半導体素子１と金属板４および導体５を接合する際に、焼結接合材２の揮発成分が溝６を通って接合領域Ａの外に排出されるため、ポーラス（ボイド）の少ない高品質な接合が得られ、高耐熱性を有した高信頼性の半導体モジュールとなる。
また、溝６には半導体素子１との接合領域Ａを通る第１溝と通らない第２溝があり、第１溝の幅は第２溝の幅よりも大きくする。これにより、溶剤が多く揮発成分量が多い焼結接合材２を用いる場合でも、ポーラス（ボイド）の少ない高品質な接合が得られ、高耐熱性を有した高信頼性の半導体モジュールとなる。
また、半導体素子１との接合領域Ａを通る溝６（第１溝）は、金属板４および導体５の、半導体素子１との対向面の一端から他端にかけて形成された直線上の溝としても良く、ポーラス（ボイド）の少ない高品質な接合が得られ、高耐熱性を有した高信頼性の半導体モジュールとなる。
また、実施の形態１の半導体モジュール１００の製造方法は、（ａ）金属板４の半導体素子１を接合すべき領域に、金属ナノ粒子を用いた第１焼結接合材２を配置する工程と、（ｂ）第１焼結接合材２を介して金属板４と半導体素子１の裏面（第２主面）が接触するように、半導体素子１を配置する工程と、（ｃ）半導体素子１の表面（第１主面）上に、金属ナノ粒子を用いた第２焼結接合材２を配置する工程と、（ｄ）第２焼結接合材２を介して半導体素子１の表面（第１主面）上に導体５を配置する工程と、（ｅ）金属板４および導体５を一括して加熱および加圧し、半導体素子１に接合する工程と、を備える。金属板４および導体５を半導体素子１に対して一括接合することにより、高品質な接合を得ることができ、信頼性の高い半導体モジュール１００が得られる。
＜Ｂ．実施の形態２＞
＜Ｂ−１．構成＞
図７は、実施の形態２に係る半導体モジュール１０２の構成を示す断面図である。実施の形態１の半導体モジュール１００，１０１では、焼結接合材２の揮発成分を接合部の外に排出する導通経路として、金属板４および導体５の半導体素子１に対向する面に溝６を設けている。これに対し、実施の形態２の半導体モジュール１０２では、上記導通経路として、導体５の表面から裏面に亘る貫通孔１０を溝６に代えて形成する。
図８は、半導体モジュール１０２における導体５の平面図である。貫通孔１０は、焼結接合材２の揮発成分を接合部の外に排出するため、導体５と半導体素子１との接合領域Ａを通って形成される。また、貫通孔１０の体積は接合領域に形成される溝６の体積よりも大きくすることができるので、実施の形態１に比べて焼結接合材２の揮発成分を大幅に排出しやすくなる。これにより、半導体素子１の表面電極と導体５との接合部内のポーラス（ボイド）を抑制し、高品質な接合を得ることができる。また、導体５に貫通孔１０を設けることにより接合形状が凸形状となることから、接合強度が大きくなる。
図７，８では１つの接合領域Ａに対して１つの貫通孔１０を形成しているが、図９に示すように複数の貫通孔１０を形成しても良い。こうすることにより、接合領域Ａの全体から焼結接合材２の揮発成分を排出することができ、ポーラスを抑制した高品質な接合部を得ることができる。また、貫通孔１０のサイズは同一接合領域Ａ内において異なっていてもいい。例えば、焼結接合材２の揮発量が多い接合領域Ａの中心では、接合領域Ａの周囲に比べて貫通孔１０の直径を大きくしても良い（図９）。
また、貫通孔１０は円形状でなくても良い。
金属板４には、実施の形態１と同様に溝６が形成される。貫通孔１０以外の構成は、実施の形態１の半導体モジュール１０１と同様であるため、説明を省略する。
＜Ｂ−２．製造工程＞
半導体モジュール１０２の製造方法は、実施の形態１と同一である。すなわち、半導体素子１の裏面電極に対する金属板４の接合と、半導体素子１の表面電極に対する導体５の接合とを、一括して行う。但し、加熱を開始してから焼結温度以下の８０〜１３０℃までは加圧せず、この温度で一定時間（５０分以内）維持しても良い。そして、その後、温度上昇させ加熱しながら加圧を実施し、接合を完了する。この場合は、焼結温度以下で時間をかけることにより、より十分に溶剤を揮発させることができる。
＜Ｂ−３．効果＞
実施の形態２に係る半導体モジュール１０２において、焼結接合材２の揮発成分を接合部の外に排出する導通経路は、金属板４および導体５の、半導体素子１との接合領域Ａから、半導体素子１との対向面の反対側の面に亘る貫通孔１０を含む。これにより、半導体素子１の表面電極と導体５との接合部内のポーラス（ボイド）を抑制し、高品質な接合を得ることができる。また、導体５に貫通孔１０を設けることにより接合形状が凸形状となることから、接合強度が大きくなる。
また、貫通孔１０を１つの接合領域Ａに対して複数設けることにより、接合領域Ａの全体から焼結接合材２の揮発成分を排出することができ、ポーラスを抑制した高品質な接合部を得ることができる。
なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略したりすることが可能である。
１ 半導体素子、２ 焼結接合材、３ 絶縁金属層、４ 金属板、５ 導体、６ 溝、７ 信号端子、８ ワイヤ、９ 封止樹脂、１０ 貫通孔、１００〜１０２ 半導体モジュール。

Claims (7)

  1. 第１主面と前記第１主面に対向する第２主面を有し、前記第１主面に表面電極を、前記第２主面に裏面電極を、それぞれ有する半導体素子と、
    前記半導体素子の前記裏面電極に金属ナノ粒子を用いた焼結接合材を介して電気的に接続された金属板と、
    前記半導体素子の前記表面電極に金属ナノ粒子を用いた焼結接合材を介して電気的に接続された平板状の導体と、を備え、
    前記金属板および前記導体には、前記半導体素子との接合領域から当該接合領域の外へ連通する導通経路が設けられている、
    半導体モジュール。
  2. 前記金属板および前記導体の、前記半導体素子との対向面に溝が形成され、
    前記導通経路は、前記溝のうち、前記半導体素子との接合領域を通って延在する第１溝を含む、
    請求項１に記載の半導体モジュール。
  3. 前記溝は、前記半導体素子との接合領域を通らない第２溝を含み、
    前記第１溝の幅は前記第２溝の幅よりも大きい、
    請求項２に記載の半導体モジュール。
  4. 前記第１溝は、前記金属板および前記導体の、前記半導体素子との対向面の一端から他端にかけて、前記接合領域を通って形成された直線上の溝である、
    請求項２又は３に記載の半導体モジュール。
  5. 前記導通経路は、前記金属板および前記導体の、前記半導体素子との接合領域から、前記半導体素子との対向面の反対側の面に亘る貫通孔を含む、
    請求項１〜４のいずれかに記載の半導体モジュール。
  6. 前記貫通孔は複数存在する、
    請求項５に記載の半導体モジュール。
  7. 請求項１〜６のいずれかに記載の半導体モジュールの製造方法であって、
    （ａ）前記金属板の前記半導体素子を接合すべき領域に、金属ナノ粒子を用いた第１焼結接合材を配置する工程と、
    （ｂ）前記第１焼結接合材を介して前記金属板と前記半導体素子の前記第２主面が接触するように、前記半導体素子を配置する工程と、
    （ｃ）前記半導体素子の前記第１主面上に、金属ナノ粒子を用いた第２焼結接合材を配置する工程と、
    （ｄ）前記第２焼結接合材を介して前記半導体素子の前記第１主面上に前記導体を配置する工程と、
    （ｅ）前記金属板および前記導体を一括して加熱および加圧し、前記半導体素子に対して接合する工程と、
    を備える、
    半導体モジュールの製造方法。
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