JP2014151249A5 - - Google Patents
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- JP2014151249A5 JP2014151249A5 JP2013021416A JP2013021416A JP2014151249A5 JP 2014151249 A5 JP2014151249 A5 JP 2014151249A5 JP 2013021416 A JP2013021416 A JP 2013021416A JP 2013021416 A JP2013021416 A JP 2013021416A JP 2014151249 A5 JP2014151249 A5 JP 2014151249A5
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- JP
- Japan
- Prior art keywords
- substrate
- coating film
- coating
- liquid
- mist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007788 liquid Substances 0.000 claims description 19
- 239000003595 mist Substances 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 54
- 239000011248 coating agent Substances 0.000 claims 33
- 238000000576 coating method Methods 0.000 claims 33
- 238000000034 method Methods 0.000 claims 5
- 239000002245 particle Substances 0.000 claims 3
- 238000004528 spin coating Methods 0.000 claims 3
- 238000004590 computer program Methods 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- 239000010419 fine particle Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Description
仕切り板14の平坦面部25の領域の上面には、ミスト供給部に相当する二流体ノズルであるミストノズル3が設けられる。ミストノズル3はウエハWの下方であって、周方向に等間隔に4ヶ所に設置されている。ミストノズル3の構成について、図4、図5も参照しながら説明する。ミストノズル3の内部には、縦方向に貫通する処理液供給路43が設けられており、処理液供給路43の先端部分には先端部材40が設けられ、この先端部材40は、周縁部に多数の処理液吐出孔41が周方向に等間隔に並べて設けられている。処理液吐出孔41には、処理液吐出孔41から突出するようにガイド部46が設けられている。 A mist nozzle 3 that is a two-fluid nozzle corresponding to a mist supply unit is provided on the upper surface of the area of the flat surface portion 25 of the partition plate 14. The mist nozzles 3 are provided at four locations below the wafer W at equal intervals in the circumferential direction. The configuration of the mist nozzle 3 will be described with reference to FIGS. Inside the mist nozzle 3, the processing liquid supply path 43 penetrating in a vertical direction is provided, the tip member 40 is provided at the tip portion of the processing liquid supply channel 43, the tip member 40, the peripheral portion A large number of treatment liquid discharge holes 41 are arranged at equal intervals in the circumferential direction. The processing solution discharge hole 41, and the guide portion 46 is provided so as to protrude from the processing liquid discharge hole 41.
ガス吐出流路42は、ガス供給管47の一端と接続されており、ガス供給管47の他端には、例えばポンプやバルブ、マスフローメータなどで構成されるガス供給機構48が接続されており、例えば所定量の窒素ガスをガス吐出流路42から吐出できるように構成されている。
ミストノズル3は、処理液吐出孔41から純水を吐出して、吐出される純水に向けてガス吐出流路42より窒素ガスを吐出する。吐出される純水とキャリアガスである窒素ガスとが混合されて、微細なミストが形成されると推測される。
The gas discharge passage 42 is connected to one end of a gas supply pipe 47, and the other end of the gas supply pipe 47 is connected to a gas supply mechanism 48 composed of, for example, a pump, a valve, a mass flow meter, and the like. For example, a predetermined amount of nitrogen gas can be discharged from the gas discharge passage 42.
The mist nozzle 3 discharges pure water from the treatment liquid discharge hole 41 and discharges nitrogen gas from the gas discharge passage 42 toward the discharged pure water. It is presumed that fine water mist is formed by mixing the discharged pure water and the nitrogen gas as the carrier gas.
Claims (9)
その後、基板の中心部に塗布液を供給し、基板の回転による遠心力により広げて当該基板に塗布膜を形成する工程と、
前記塗布液が基板の周縁部に行き渡る前に、基板の下面側に液体または固体の微粒子群であるミストを供給して基板を冷却する工程と、
を含むことを特徴とする塗布膜形成方法。 A step of horizontally holding the substrate on a substrate holding portion that is rotatable around a vertical axis;
Thereafter, supplying a coating solution to the center of the substrate, and forming a coating film on the substrate by spreading by a centrifugal force due to rotation of the substrate;
Supplying the mist that is a group of fine particles of liquid or solid to the lower surface side of the substrate before the coating solution reaches the peripheral edge of the substrate, and cooling the substrate;
A coating film forming method comprising:
前記ミストの供給開始は、基板を前記第3の回転速度で回転させる前であることを特徴とする請求項1または2に記載の塗布膜形成方法。 The step of forming the coating film on the substrate includes a step of rotating the substrate at a first rotation speed and supplying a coating liquid to the central portion of the substrate, and then a second rotation that is slower than the first rotation speed. Rotating at a speed, and then rotating the substrate at a third rotational speed faster than the second rotational speed to spread the coating liquid to the peripheral edge of the substrate,
3. The coating film forming method according to claim 1, wherein the supply of the mist is started before the substrate is rotated at the third rotation speed .
次いで基板保持部上の基板を回転させ、当該基板の下面と対向する液体収容部から基板の下面側に形成される気流により液体を揮発させて基板を冷却する工程と、
その後、基板の中心部に塗布液を供給し、基板の回転による遠心力により広げて当該基板に塗布膜を形成する工程と、
を含むことを特徴とする塗布膜形成方法。 A step of horizontally holding the substrate on a substrate holding portion that is rotatable around a vertical axis;
Next, rotating the substrate on the substrate holding unit, volatilizing the liquid by an air flow formed on the lower surface side of the substrate from the liquid storage unit facing the lower surface of the substrate, and cooling the substrate;
Thereafter, supplying a coating solution to the center of the substrate, and forming a coating film on the substrate by spreading by a centrifugal force due to rotation of the substrate;
A coating film forming method comprising:
基板を水平に保持する基板保持部と、
前記基板保持部を鉛直軸周りに回転させる回転機構と、
前記基板に塗布液を供給する塗布液ノズルと、
前記基板を囲むように設けられ、基板の回転により飛散した塗布液を排出するための排液路と、その内部雰囲気を排気するための排気路と、が接続されたたカップ体と、
前記基板の下面側に液体または固体の微粒子群であるミストを供給するためのミスト供給部と、
塗布液が基板の周縁部に行き渡る前に、前記ミスト供給部からミストを吐出するように制御信号を出力するための制御部と、
を備えることを特徴とする塗布膜形成装置。 In a coating film forming apparatus for forming a coating film on a surface of a substrate by spin coating,
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around a vertical axis;
A coating solution nozzle for supplying a coating solution to the substrate;
A cup body provided to surround the substrate and connected to a drain path for discharging the coating liquid scattered by the rotation of the substrate and an exhaust path for exhausting the internal atmosphere;
A mist supply unit for supplying mist which is a liquid or solid particle group to the lower surface side of the substrate;
A control unit for outputting a control signal so as to discharge the mist from the mist supply unit before the coating liquid reaches the peripheral edge of the substrate;
A coating film forming apparatus comprising:
基板を水平に保持する基板保持部と、
前記基板保持部に保持された基板を鉛直軸周りに回転させる回転機構と、
前記基板保持部に保持された基板に塗布液を供給する塗布液ノズルと、
前記基板を囲むように設けられ、基板の回転により飛散した塗布液を排出するための排出路と、その内部雰囲気を排気するための排気路と、が接続されたたカップ体と、
基板の下面と対向するように開口し、前記気流により液体を揮発させるための液体収容部と、
基板保持部上の基板の回転により、基板の下面側に基体を引き込んで気流を形成するための気体引き込み口と、を備えたことを特徴とする塗布膜形成装置。 In a coating film forming apparatus that applies a coating liquid to the surface of a substrate and forms a coating film by spin coating,
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate held by the substrate holding unit around a vertical axis;
A coating solution nozzle for supplying a coating solution to the substrate held by the substrate holding unit;
A cup body provided so as to surround the substrate and connected to a discharge path for discharging the coating liquid scattered by rotation of the substrate and an exhaust path for exhausting the internal atmosphere;
A liquid container that opens to face the lower surface of the substrate and volatilizes the liquid by the airflow;
An apparatus for forming a coating film, comprising: a gas inlet for pulling a substrate onto a lower surface side of the substrate by the rotation of the substrate on the substrate holding portion to form an air flow.
前記コンピュータプログラムは、請求項1ないし4のいずれか一項に記載された塗布膜形成方法を実行するようにステップ群が組まれていることを特徴とする記憶媒体。 A storage medium storing a computer program used in a coating film forming apparatus that forms a coating film on a surface of a substrate by spin coating,
A storage medium, wherein the computer program includes a group of steps so as to execute the coating film forming method according to any one of claims 1 to 4.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013021416A JP5900370B2 (en) | 2013-02-06 | 2013-02-06 | Coating film forming method, coating film forming apparatus, and storage medium |
TW103103249A TW201436882A (en) | 2013-02-06 | 2014-01-28 | Coating film formation method, coating film formation device, and storage medium |
PCT/JP2014/052439 WO2014123085A1 (en) | 2013-02-06 | 2014-02-03 | Coat film formation method, coat film formation device, and memory medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013021416A JP5900370B2 (en) | 2013-02-06 | 2013-02-06 | Coating film forming method, coating film forming apparatus, and storage medium |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014151249A JP2014151249A (en) | 2014-08-25 |
JP2014151249A5 true JP2014151249A5 (en) | 2015-03-19 |
JP5900370B2 JP5900370B2 (en) | 2016-04-06 |
Family
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Family Applications (1)
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JP2013021416A Active JP5900370B2 (en) | 2013-02-06 | 2013-02-06 | Coating film forming method, coating film forming apparatus, and storage medium |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5900370B2 (en) |
TW (1) | TW201436882A (en) |
WO (1) | WO2014123085A1 (en) |
Families Citing this family (11)
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JP5886935B1 (en) * | 2014-12-11 | 2016-03-16 | 東京エレクトロン株式会社 | Coating processing method, computer storage medium, and coating processing apparatus |
DE102015100579A1 (en) * | 2015-01-15 | 2016-07-21 | Ev Group E. Thallner Gmbh | Method and device for coating substrates |
JP6212066B2 (en) * | 2015-03-03 | 2017-10-11 | 東京エレクトロン株式会社 | Coating processing method, computer storage medium, and coating processing apparatus |
JP6059793B2 (en) * | 2015-12-11 | 2017-01-11 | 東京エレクトロン株式会社 | Coating processing method, computer storage medium, and coating processing apparatus |
JP6728009B2 (en) * | 2016-09-26 | 2020-07-22 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
CN108855776B (en) * | 2017-05-08 | 2020-08-14 | 致伸科技股份有限公司 | Centrifugal glue injection system and method thereof |
CN110560327A (en) * | 2018-06-05 | 2019-12-13 | 深圳市旭控科技有限公司 | Silicon wafer coating source device |
JP7202968B2 (en) | 2019-05-09 | 2023-01-12 | 東京エレクトロン株式会社 | Coating treatment method, coating treatment apparatus and storage medium |
JP7344726B2 (en) * | 2019-09-13 | 2023-09-14 | 東京エレクトロン株式会社 | Coating treatment method, coating treatment device, and storage medium |
CN112415854A (en) * | 2020-11-23 | 2021-02-26 | 华虹半导体(无锡)有限公司 | Method for improving wafer photoresist coating effect |
JP2024060970A (en) | 2022-10-20 | 2024-05-07 | 東京エレクトロン株式会社 | Cup, liquid processing device, and liquid processing method |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01204421A (en) * | 1988-02-10 | 1989-08-17 | Hitachi Ltd | Photoresist application method |
JPH0462831A (en) * | 1990-06-25 | 1992-02-27 | Toshiba Corp | Application of photoresist |
JP2591360B2 (en) * | 1991-05-08 | 1997-03-19 | 株式会社日立製作所 | How to apply photoresist |
JPH0945611A (en) * | 1995-07-27 | 1997-02-14 | Dainippon Screen Mfg Co Ltd | Spin coater of substrate |
JP3453073B2 (en) * | 1998-10-14 | 2003-10-06 | 東京エレクトロン株式会社 | Coating equipment |
US6322626B1 (en) * | 1999-06-08 | 2001-11-27 | Micron Technology, Inc. | Apparatus for controlling a temperature of a microelectronics substrate |
JP3990998B2 (en) * | 2003-03-14 | 2007-10-17 | 東京エレクトロン株式会社 | Coating apparatus and coating method |
JP4597847B2 (en) * | 2005-11-28 | 2010-12-15 | 株式会社フジクラ | Deposition equipment |
JP2009220046A (en) * | 2008-03-17 | 2009-10-01 | Seiko Epson Corp | Coating device |
JP5511451B2 (en) * | 2010-03-16 | 2014-06-04 | 中央発條株式会社 | Manufacturing method of automotive stabilizer |
-
2013
- 2013-02-06 JP JP2013021416A patent/JP5900370B2/en active Active
-
2014
- 2014-01-28 TW TW103103249A patent/TW201436882A/en unknown
- 2014-02-03 WO PCT/JP2014/052439 patent/WO2014123085A1/en active Application Filing
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