JP2013247142A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- JP2013247142A5 JP2013247142A5 JP2012117666A JP2012117666A JP2013247142A5 JP 2013247142 A5 JP2013247142 A5 JP 2013247142A5 JP 2012117666 A JP2012117666 A JP 2012117666A JP 2012117666 A JP2012117666 A JP 2012117666A JP 2013247142 A5 JP2013247142 A5 JP 2013247142A5
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- JP
- Japan
- Prior art keywords
- region
- layer
- channel formation
- semiconductor device
- formation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 1
Claims (3)
ゲート絶縁膜と、A gate insulating film;
前記ゲート絶縁膜を介して、前記酸化物層と重なるゲート電極と、を有し、A gate electrode overlapping with the oxide layer via the gate insulating film,
前記酸化物層は、第１の層と、第２の層とを有し、The oxide layer has a first layer and a second layer,
前記第１の層及び前記第２の層は、それぞれ、Ｉｎと、Ｇａと、Ｚｎとを有し、The first layer and the second layer have In, Ga, and Zn, respectively.
前記ゲート電極と遠い側に配置された、前記第１の層は、ＩｎとＧａの含有率をＩｎ≦Ｇａとし、The first layer disposed on the side far from the gate electrode has an In and Ga content ratio of In ≦ Ga,
前記ゲート電極と近い側に配置された、前記第２の層は、ＩｎとＧａの含有率をＩｎ＞Ｇａとすることを特徴とする半導体装置。The semiconductor device, wherein the second layer disposed on the side close to the gate electrode has a content ratio of In and Ga such that In> Ga.
前記酸化物層は、ソース電極と重なる第１の領域と、ドレイン電極と重なる第２の領域と、前記第１の領域と前記第２の領域との間にあるチャネル形成領域とを有し、The oxide layer has a first region overlapping with the source electrode, a second region overlapping with the drain electrode, and a channel formation region between the first region and the second region,
前記チャネル形成領域は、前記第１の領域より薄く、The channel formation region is thinner than the first region,
前記チャネル形成領域は、前記第２の領域より薄いことを特徴とする半導体装置。The semiconductor device, wherein the channel formation region is thinner than the second region.
前記チャネル形成領域は、前記第１の領域との境界において、テーパ形状を有し、The channel formation region has a tapered shape at the boundary with the first region,
前記チャネル形成領域は、前記第２の領域との境界において、テーパ形状を有することを特徴とする半導体装置。The channel formation region has a taper shape at a boundary with the second region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012117666A JP6016455B2 (en) | 2012-05-23 | 2012-05-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012117666A JP6016455B2 (en) | 2012-05-23 | 2012-05-23 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016187951A Division JP6188900B2 (en) | 2016-09-27 | 2016-09-27 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013247142A JP2013247142A (en) | 2013-12-09 |
| JP2013247142A5 true JP2013247142A5 (en) | 2015-04-16 |
| JP6016455B2 JP6016455B2 (en) | 2016-10-26 |
Family
ID=49846721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012117666A Active JP6016455B2 (en) | 2012-05-23 | 2012-05-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6016455B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6506545B2 (en) * | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US9653487B2 (en) * | 2014-02-05 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, module, and electronic device |
| KR102332469B1 (en) | 2014-03-28 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Transistor and semiconductor device |
| KR102333604B1 (en) * | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and display device including the same |
| JPWO2016067161A1 (en) * | 2014-10-28 | 2017-08-31 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
| KR102513517B1 (en) * | 2015-07-30 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and electronic device |
| TWI715699B (en) * | 2016-10-21 | 2021-01-11 | 日商半導體能源硏究所股份有限公司 | Composite oxide and transistor |
| KR102482856B1 (en) * | 2017-12-15 | 2022-12-28 | 엘지디스플레이 주식회사 | Thin film trnasistor, method for manufacturing the same and display device comprising the same |
| JP7209692B2 (en) * | 2018-03-06 | 2023-01-20 | 株式会社半導体エネルギー研究所 | semiconductor equipment |
| JP2019220530A (en) * | 2018-06-18 | 2019-12-26 | 株式会社ジャパンディスプレイ | Semiconductor device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5345359B2 (en) * | 2008-09-18 | 2013-11-20 | 富士フイルム株式会社 | Thin film field effect transistor and display device using the same |
| US9312156B2 (en) * | 2009-03-27 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| WO2011048923A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
| KR102393447B1 (en) * | 2009-11-13 | 2022-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| KR20190100462A (en) * | 2009-11-28 | 2019-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| WO2011068037A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5740169B2 (en) * | 2010-02-19 | 2015-06-24 | 株式会社半導体エネルギー研究所 | Method for manufacturing transistor |
| JP5666567B2 (en) * | 2010-04-23 | 2015-02-12 | 株式会社日立製作所 | Semiconductor device, RFID tag using the same, and display device |
| US9209314B2 (en) * | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
| JP5626978B2 (en) * | 2010-09-08 | 2014-11-19 | 富士フイルム株式会社 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND APPARATUS HAVING THE THIN FILM TRANSISTOR |
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2012
- 2012-05-23 JP JP2012117666A patent/JP6016455B2/en active Active
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