JP2013217954A - Method for forming resist pattern, permanent mask resist and photosensitive resin composition - Google Patents
Method for forming resist pattern, permanent mask resist and photosensitive resin composition Download PDFInfo
- Publication number
- JP2013217954A JP2013217954A JP2012085521A JP2012085521A JP2013217954A JP 2013217954 A JP2013217954 A JP 2013217954A JP 2012085521 A JP2012085521 A JP 2012085521A JP 2012085521 A JP2012085521 A JP 2012085521A JP 2013217954 A JP2013217954 A JP 2013217954A
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- Prior art keywords
- resin composition
- photosensitive
- photosensitive resin
- group
- resist pattern
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 38
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 38
- 239000007864 aqueous solution Substances 0.000 claims abstract description 35
- 239000003822 epoxy resin Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 33
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000460 chlorine Substances 0.000 claims abstract description 24
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 17
- 239000000178 monomer Substances 0.000 claims abstract description 14
- 239000003999 initiator Substances 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 abstract description 47
- 239000000243 solution Substances 0.000 abstract description 21
- 238000007747 plating Methods 0.000 abstract description 16
- 239000010931 gold Substances 0.000 abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052737 gold Inorganic materials 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 58
- -1 isocyanate compound Chemical class 0.000 description 47
- 239000010408 film Substances 0.000 description 35
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- 238000006243 chemical reaction Methods 0.000 description 24
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 20
- 239000000047 product Substances 0.000 description 19
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 18
- 239000002994 raw material Substances 0.000 description 17
- 238000011161 development Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 150000008065 acid anhydrides Chemical class 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
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- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 11
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- 239000001294 propane Substances 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
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- 125000005442 diisocyanate group Chemical group 0.000 description 9
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- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 9
- 150000002763 monocarboxylic acids Chemical class 0.000 description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 8
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- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 8
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
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- 239000003513 alkali Substances 0.000 description 7
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- 239000010949 copper Substances 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 7
- 239000003208 petroleum Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 125000002947 alkylene group Chemical group 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 5
- 125000000732 arylene group Chemical group 0.000 description 5
- 150000001768 cations Chemical group 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 5
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 4
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
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- 238000012545 processing Methods 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical class NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
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- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Abstract
Description
本発明は、レジストパターンの形成方法、永久マスクレジスト及び感光性樹脂組成物に関する。 The present invention relates to a resist pattern forming method, a permanent mask resist, and a photosensitive resin composition.
近年、デジタル機器の小型軽量化に伴い、プリント配線板、半導体パッケージ基板、フレキシブル配線板に形成する回路の微細化、高密度化が進んでいる。これらの微細、高密度な開口パターンを保護する目的で、感光性を有したソルダーレジストが用いられている。ソルダーレジストには、表面平坦性、現像性、高解像性、絶縁信頼性及びはんだ耐熱性、金めっき耐性等が要求される。 In recent years, with the reduction in size and weight of digital devices, miniaturization and higher density of circuits formed on a printed wiring board, a semiconductor package substrate, and a flexible wiring board are progressing. For the purpose of protecting these fine and high-density opening patterns, a photosensitive solder resist is used. The solder resist is required to have surface flatness, developability, high resolution, insulation reliability, solder heat resistance, gold plating resistance, and the like.
ソルダーレジスト用の感光性樹脂組成物は、特にプリント配線板の分野では、通常液状の感光性樹脂組成物が用いられている。そして、熱硬化性のエポキシ樹脂と、アルカリ現像性を付与するためのカルボキシル基を含有する感光性プレポリマーとを別々に分けた2液型の感光性樹脂組成物からソルダーレジストを形成するのが一般的である。感光性プレポリマーとしては、クレゾールノボラック型エポキシ樹脂にアクリル酸を付加した後、酸無水物等で酸変性したアルカリ現像可能な感光性プレポリマーが広く用いられている。 As the photosensitive resin composition for solder resist, a liquid photosensitive resin composition is usually used particularly in the field of printed wiring boards. Then, a solder resist is formed from a two-part type photosensitive resin composition obtained by separately dividing a thermosetting epoxy resin and a photosensitive prepolymer containing a carboxyl group for imparting alkali developability. It is common. As the photosensitive prepolymer, an alkali developable photosensitive prepolymer which is obtained by adding acrylic acid to a cresol novolak type epoxy resin and then acid-modifying with an acid anhydride or the like is widely used.
上記2液型の感光性樹脂組成物は、エポキシ樹脂と感光性プレポリマーのカルボキシル基の反応が室温でも進行するため、2液を混合した後の保存安定性(ポットライフ)が数時間から一日と短く、使用直前に混合しなければならない等、使用条件に制限が生じる。こうした問題を避けるために、従来、熱硬化剤としてエポキシ樹脂の代わりにブロック型イソシアネート化合物を用いて保存安定性を向上させた1液型の感光性樹脂組成物が用いられている(例えば特許文献1参照)。 In the above two-component photosensitive resin composition, the reaction of the carboxyl group of the epoxy resin and the photosensitive prepolymer proceeds even at room temperature, so the storage stability (pot life) after mixing the two components is from several hours to one. The use conditions are limited, such as being short and short and having to be mixed immediately before use. In order to avoid such a problem, a one-component type photosensitive resin composition having a storage stability improved by using a blocked isocyanate compound instead of an epoxy resin as a thermosetting agent has been conventionally used (for example, Patent Documents). 1).
一方、近年、膜厚の均一性、表面平滑性、薄膜形成性、取り扱い性を良好にする観点から、ドライフィルムタイプのソルダーレジスト用の感光性樹脂組成物が強く望まれている。このような感光性樹脂組成物によれば、上記の特性の他、ソルダーレジスト形成のための工程の簡略化やソルダーレジスト形成時の溶剤排出量の低減といった効果が得られる。 On the other hand, in recent years, a photosensitive resin composition for a dry film type solder resist has been strongly desired from the viewpoint of improving film thickness uniformity, surface smoothness, thin film forming property, and handleability. According to such a photosensitive resin composition, in addition to the above characteristics, effects such as simplification of a process for forming a solder resist and reduction of a solvent discharge amount at the time of forming the solder resist are obtained.
これまでにも種々のドライフィルムタイプのソルダーレジスト用の感光性樹脂組成物が開発されている。例えば、特許文献2では、カルボキシル基を有するポリマー、光重合性化合物、光重合開始剤及びビスマレイミド化合物を含有する感光性フィルムが開示されている。また、特許文献3では、無水マレイン酸共重合体の無水物基に対して0.1〜1.2当量の1級アミン化合物を反応させて得られた共重合体、重合性化合物及び光重合開始剤を含有する感光性フィルムが開示されている。さらに、特許文献4では、感光性プレポリマーとエポキシ樹脂双方の塩素及び加水分解性塩素の含有量を規定した感光性フィルムが開示されている。 So far, various photosensitive resin compositions for dry film type solder resists have been developed. For example, Patent Document 2 discloses a photosensitive film containing a polymer having a carboxyl group, a photopolymerizable compound, a photopolymerization initiator, and a bismaleimide compound. Moreover, in patent document 3, the copolymer obtained by making 0.1-1.2 equivalent primary amine compound react with the anhydride group of a maleic anhydride copolymer, a polymeric compound, and photopolymerization. A photosensitive film containing an initiator is disclosed. Furthermore, in patent document 4, the photosensitive film which prescribed | regulated content of chlorine and hydrolyzable chlorine of both the photosensitive prepolymer and an epoxy resin is disclosed.
一方で、接続端子の狭ピッチ化によるソルダーボールの小径化に伴い、ソルダーレジストには微細開口性(良好な解像性)が更に求められるようになっている。また、配線の狭ピッチ化に伴い、埋め込み性、HAST耐性の向上も強く求められている。 On the other hand, as the diameter of the solder balls is reduced by reducing the pitch of the connection terminals, the solder resist is further required to have a fine aperture (good resolution). In addition, with the narrowing of wiring pitch, improvement in embedding property and HAST resistance is also strongly demanded.
しかしながら、上記特許文献に記載される感光性フィルムを用いた場合、微細開口性、解像度、金めっき耐性及びHAST耐性(高度加速ストレス試験、Highly Accelerated Temperature and Humidity Stress Test)の全てに優れる点では改善の余地があった。特に、微細配線間での絶縁信頼性の項目の重要性が増しており、従来まで行われてきた85℃、60%RH、又は85℃、85%RHで電圧を印加する試験に比べ130℃、85%RHと試験温度が高く条件が厳しいHAST試験での耐性が求められている。 However, when the photosensitive film described in the above-mentioned patent document is used, it is improved in terms of being excellent in all of fine aperture properties, resolution, gold plating resistance, and HAST resistance (highly accelerated stress test, Highly Accelerated Temperature and Humidity Stress Test). There was room for. In particular, the importance of the item of insulation reliability between fine wirings is increasing, and it is 130 ° C. compared to the conventional test in which voltage is applied at 85 ° C., 60% RH, or 85 ° C., 85% RH. , 85% RH and a high test temperature, and the harsh conditions required for the HAST test are required.
本発明は、解像性、微細開口性(丸穴解像性)、金めっき耐性、はんだ耐性及びHAST耐性に優れた感光性樹脂組成物と、それを用いたレジストパターンの形成方法及びそれにより得られた永久マスクレジストを提供することを目的とする。 The present invention relates to a photosensitive resin composition excellent in resolution, fine aperture (round hole resolution), gold plating resistance, solder resistance and HAST resistance, and a method for forming a resist pattern using the same. An object is to provide the obtained permanent mask resist.
本発明者らは、熱硬化剤としてエポキシ樹脂を用いた1液型の感光性樹脂組成物について、上記の課題を解決するため鋭意検討した結果、エポキシ樹脂の塩素含有量を特定の値以下とした高純度品を用い、さらに、レジストパターンの形成時に用いる洗浄水に2価の金属イオンを含有させた水溶液を用いて処理することで上記目的を達成することを見出し、本発明を完成した。 As a result of intensive studies to solve the above-mentioned problems, the present inventors have determined that the chlorine content of the epoxy resin is not more than a specific value. The present invention was completed by finding that the above-mentioned object was achieved by using a high-purity product and treating with an aqueous solution containing divalent metal ions in the washing water used in forming the resist pattern.
本発明は、[1]基板上に、(a)エチレン性不飽和基とカルボキシル基を有する樹脂と、(b)エチレン性不飽和基を有する光重合性モノマーと、(c)光重合開始剤と、(d)塩素含有量が500ppm以下であるエポキシ樹脂と、を含有する感光性樹脂組成物からなる感光層を設け、上記感光層の所定部分を活性光線により硬化後、上記所定部分以外の前記感光層領域を除去し、2価の金属イオンを含有する水溶液を用いて処理する、レジストパターンの形成方法に関する。 The present invention provides: [1] On a substrate, (a) a resin having an ethylenically unsaturated group and a carboxyl group, (b) a photopolymerizable monomer having an ethylenically unsaturated group, and (c) a photopolymerization initiator. And (d) an epoxy resin having a chlorine content of 500 ppm or less, and a photosensitive layer comprising a photosensitive resin composition, and after curing a predetermined portion of the photosensitive layer with actinic rays, The present invention relates to a resist pattern forming method in which the photosensitive layer region is removed and processing is performed using an aqueous solution containing divalent metal ions.
また、本発明は、[2]上記2価の金属イオンは、Ca2+、Mg2+、Sr2+、Ba2+から選ばれた少なくとも一種の金属イオンであることを特徴とする上記[1]に記載のレジストパターンの形成方法に関する。 Further, the present invention provides [2] The above [1], wherein the divalent metal ion is at least one metal ion selected from Ca 2+ , Mg 2+ , Sr 2+ and Ba 2+. The present invention relates to a method for forming a resist pattern.
また、本発明は、[3]上記[1]又は[2]に記載のレジストパターンの形成方法により製造される、永久マスクレジストに関する。 The present invention also relates to [3] a permanent mask resist produced by the resist pattern forming method described in [1] or [2].
また、本発明は、[4]基板上に、感光性樹脂組成物からなる感光層を設け、前記感光層の所定部分を活性光線により硬化後、前記所定部分以外の前記感光層領域を除去し、2価の金属イオンを含有する水溶液を用いて処理する、レジストパターンの形成方法に用いられる感光性樹脂組成物であって、
前記感光性樹脂組成物が、(a)エチレン性不飽和基とカルボキシル基を有する樹脂と、(b)エチレン性不飽和基を有する光重合性モノマーと、(c)光重合開始剤と、(d)塩素含有量が500ppm以下であるエポキシ樹脂と、を含有する、感光性樹脂組成物に関する。
The present invention also provides [4] a photosensitive layer made of a photosensitive resin composition on a substrate, and a predetermined portion of the photosensitive layer is cured with actinic rays, and then the photosensitive layer region other than the predetermined portion is removed. A photosensitive resin composition used in a method for forming a resist pattern, which is treated with an aqueous solution containing a divalent metal ion,
The photosensitive resin composition comprises (a) a resin having an ethylenically unsaturated group and a carboxyl group, (b) a photopolymerizable monomer having an ethylenically unsaturated group, (c) a photopolymerization initiator, d) It relates to a photosensitive resin composition containing an epoxy resin having a chlorine content of 500 ppm or less.
本発明の高純度なエポキシ樹脂を含有した感光性樹脂組成物を用い、所定の開口パターンで露光し、希アルカリ水溶液により現像し、2価の金属イオンを含む水溶液を用いて処理した後、硬化させることにより、解像性、微細開口性(丸穴解像性)、金めっき耐性、はんだ耐性及びHAST耐性に優れたレジストパターンを形成させることができる。これにより得られた永久マスクレジストは、同等な性能を有し、プリント配線板、半導体パッケージ基板、フレキシブル配線板に最適なソルダーレジストを形成することができる。 Using the photosensitive resin composition containing the high-purity epoxy resin of the present invention, exposing with a predetermined opening pattern, developing with a dilute alkaline aqueous solution, treating with an aqueous solution containing divalent metal ions, and curing By doing so, a resist pattern excellent in resolution, fine aperture (round hole resolution), gold plating resistance, solder resistance and HAST resistance can be formed. The permanent mask resist thus obtained has equivalent performance and can form an optimal solder resist for printed wiring boards, semiconductor package substrates, and flexible wiring boards.
以下、本発明の好適な実施形態について詳細に説明する。なお、本発明における(メタ)アクリレートとは、アクリレート及びそれに対応するメタクリレートを意味し、(メタ)アクリル酸とは、アクリル酸及びメタクリル酸を意味する。 Hereinafter, preferred embodiments of the present invention will be described in detail. In the present invention, (meth) acrylate means acrylate and the corresponding methacrylate, and (meth) acrylic acid means acrylic acid and methacrylic acid.
本発明は、(a)エチレン性不飽和基とカルボキシル基を有する樹脂と、(b)エチレン性不飽和基を有する光重合性モノマーと、(c)光重合開始剤と、(d)塩素含有量が500ppm以下である高純度なエポキシ樹脂を含有する感光性樹脂組成物を用いて、ソルダーレジスト層を所定の開口パターンで露光し、希アルカリ水溶液により現像後、2価の金属イオンを含む水溶液を用いて処理した後、硬化させるレジストパターンの形成方法に関する。 The present invention includes (a) a resin having an ethylenically unsaturated group and a carboxyl group, (b) a photopolymerizable monomer having an ethylenically unsaturated group, (c) a photopolymerization initiator, and (d) containing chlorine. An aqueous solution containing a divalent metal ion after exposing a solder resist layer with a predetermined opening pattern using a photosensitive resin composition containing a high-purity epoxy resin having an amount of 500 ppm or less and developing with a dilute alkaline aqueous solution It is related with the formation method of the resist pattern hardened after processing using.
HAST耐性が劣化する主な要因として、アルカリ現像型ソルダーレジスト層内に含まれる不純物イオン由来するところが大きい。特に1価の陰イオンはイオン化エネルギーが大きく、絶縁試験中にかかる電圧によりイオン化した銅を運ぶキャリアとなりやすい。 As a main factor that the HAST resistance is deteriorated, it is largely derived from impurity ions contained in the alkali development type solder resist layer. In particular, monovalent anions have high ionization energy and are likely to be carriers that carry copper ionized by the voltage applied during the insulation test.
また、希アルカリ現像液として炭酸ナトリウムや炭酸カリウムが一般的に使用されているが、現像工程の際、これらの現像液に含まれる1価のナトリウムイオンやカリウムイオンがソルダーレジスト層に取り込まれてしまうこともHAST耐性の劣化の要因と考えられる。 In addition, sodium carbonate or potassium carbonate is generally used as a dilute alkali developer, but monovalent sodium ions and potassium ions contained in these developers are taken into the solder resist layer during the development process. This is also considered as a cause of deterioration of HAST resistance.
そこで、本発明者らは鋭意検討の結果、上記(d)成分において、塩素含有量が500ppm以下である高純度なエポキシ樹脂を選択し、且つソルダーレジスト層を所定の開口パターンで露光し、希アルカリ水溶液により現像後、2価の金属イオンを含む水溶液を用いて処理することで、HAST耐性を向上できることを見出した。 Therefore, as a result of intensive studies, the present inventors have selected a high-purity epoxy resin having a chlorine content of 500 ppm or less as the component (d), and exposed the solder resist layer with a predetermined opening pattern, thereby rarely It discovered that HAST tolerance could be improved by processing using the aqueous solution containing a bivalent metal ion after image development with aqueous alkali solution.
<(a)成分;エチレン性不飽和基とカルボキシル基を有する樹脂>
本発明の(a)成分であるエチレン性不飽和基とカルボキシル基を有する樹脂としては、例えば、エポキシ化合物(a1)と不飽和モノカルボン酸(a2)のエステル化物に飽和又は不飽和多塩基酸無水物(a3)を付加した付加反応物を用いることができる。これらは、次の二段階の反応によって得ることができる。
<(A) component; resin having an ethylenically unsaturated group and a carboxyl group>
Examples of the resin having an ethylenically unsaturated group and a carboxyl group as the component (a) of the present invention include a saturated or unsaturated polybasic acid in an esterified product of an epoxy compound (a1) and an unsaturated monocarboxylic acid (a2). An addition reaction product to which an anhydride (a3) has been added can be used. These can be obtained by the following two-step reaction.
最初の反応(以下、便宜的に「第一の反応」という。)では、エポキシ化合物(a1)と不飽和モノカルボン酸(a2)とが反応する。次の反応(以下、便宜的に「第二の反応」という。)では、第一の反応で生成したエステル化物と、飽和又は不飽和多塩基酸無水物(a3)とが反応する。 In the first reaction (hereinafter referred to as “first reaction” for convenience), the epoxy compound (a1) and the unsaturated monocarboxylic acid (a2) react. In the next reaction (hereinafter referred to as “second reaction” for convenience), the esterified product produced in the first reaction reacts with the saturated or unsaturated polybasic acid anhydride (a3).
上記エポキシ化合物(a1)としては、特に制限はないが、例えば、ビスフェノール型エポキシ化合物、ノボラック型エポキシ化合物、ビフェニル型エポキシ化合物、及び多官能エポキシ化合物が挙げられる。 Although there is no restriction | limiting in particular as said epoxy compound (a1), For example, a bisphenol type epoxy compound, a novolak type epoxy compound, a biphenyl type epoxy compound, and a polyfunctional epoxy compound are mentioned.
ビスフェノール型エポキシ化合物としては、ビスフェノールA型、ビスフェノールF型とエピクロルヒドリンを反応させて得られるものが適している。具体的には、チバガイギー社製GY−260、GY−255、XB−2615、ジャパンエポキシレジン社製エピコート828、1007、807等のビスフェノールA型、ビスフェノールF型、水添ビスフェノールA型、アミノ基含有、脂環式あるいはポリブタジエン変性等のエポキシ化合物が好適に用いられる。 As the bisphenol type epoxy compound, those obtained by reacting bisphenol A type, bisphenol F type and epichlorohydrin are suitable. Specifically, Ciba Geigy GY-260, GY-255, XB-2615, Japan Epoxy Resin Epicoat 828, 1007, 807, etc., bisphenol A type, bisphenol F type, hydrogenated bisphenol A type, amino group-containing Epoxy compounds such as alicyclic or polybutadiene modified are preferably used.
ノボラック型エポキシ化合物としては、フェノール、クレゾール、ハロゲン化フェノール及びアルキルフェノール類とホルムアルデヒドとを酸性触媒下で反応して得られるノボラック類とエピクロルヒドリンを反応させて得られるものが適している。 As the novolak type epoxy compound, those obtained by reacting novolaks obtained by reacting phenol, cresol, halogenated phenol and alkylphenols with formaldehyde in the presence of an acidic catalyst and epichlorohydrin are suitable.
上記ノボラック型エポキシ化合物としては、例えば、東都化成株式会社製YDCN−701、704、YDPN−638、602、ダウ・ケミカル社製DEN−431、439、チバガイギー社製EPN−1299、DIC株式会社製N−730、770、865、665、673、VH−4150、4240、日本化薬株式会社製EOCN−120、BRENが挙げられる。 Examples of the novolak type epoxy compound include YDCN-701, 704, YDPN-638, 602 manufactured by Tohto Kasei Co., Ltd., DEN-431, 439 manufactured by Dow Chemical Company, EPN-1299 manufactured by Ciba Geigy Co., and N manufactured by DIC Corporation. -730, 770, 865, 665, 673, VH-4150, 4240, Nippon Kayaku Co., Ltd. EOCN-120, BREN are mentioned.
また、その他の構造のエポキシ化合物としては、例えば、サリチルアルデヒド−フェノール又はクレゾール型エポキシ化合物(日本化薬株式会社製、EPPN502H、FAE2500等),DIC株式会社製エピクロン840、860、3050,ダウ・ケミカル社製DER−330、337、361,ダイセル化学工業株式会社製セロキサイド2021,三菱ガス化学株式会社製TETRAD−X、C,日本曹達株式会社製EPB−13、27も使用することができる。これらは単独で又は2種類以上を組み合わせて使用され、混合物あるいはブロック共重合物を用いてもよい。 Examples of other epoxy compounds include salicylaldehyde-phenol or cresol type epoxy compounds (Nippon Kayaku Co., Ltd., EPPN502H, FAE2500, etc.), DIC Corporation Epicron 840, 860, 3050, Dow Chemical DER-330, 337, 361 manufactured by Daicel Chemical Industries, Ltd. 2021 manufactured by Daicel Chemical Industries, Ltd., TETRAD-X, C manufactured by Mitsubishi Gas Chemical Co., Ltd., EPB-13, 27 manufactured by Nippon Soda Co., Ltd. may also be used. These may be used alone or in combination of two or more, and a mixture or a block copolymer may be used.
上記不飽和モノカルボン酸(a2)としては、(メタ)アクリル酸、クロトン酸、桂皮酸や、飽和若しくは不飽和多塩基酸無水物と1分子中に1個の水酸基を有する(メタ)アクリレート類又は飽和若しくは不飽和二塩基酸と不飽和モノグリシジル化合物との半エステル化合物類との反応物が挙げられる。この反応物としては、例えば、フタル酸、テトラヒドロフタル酸、へキサヒドロフタル酸、マレイン酸、コハク酸などと、ヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、トリス(ヒドロキシエチル)イソシアヌレートジ(メタ)アクリレート、グリシジル(メタ)アクリレートなどとを常法により等モル比で反応させて得られる反応物などが挙げられる。これらの不飽和モノカルボン酸は、単独又は混合して用いることができる。これらの中でも、アクリル酸が好ましい。 Examples of the unsaturated monocarboxylic acid (a2) include (meth) acrylic acid, crotonic acid, cinnamic acid, and saturated or unsaturated polybasic acid anhydrides and (meth) acrylates having one hydroxyl group in one molecule. Or the reaction material of the half-ester compound of a saturated or unsaturated dibasic acid and an unsaturated monoglycidyl compound is mentioned. Examples of the reactant include phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, maleic acid, succinic acid, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and tris (hydroxyethyl) isocyanurate. Examples thereof include reactants obtained by reacting di (meth) acrylate, glycidyl (meth) acrylate and the like in an equimolar ratio by a conventional method. These unsaturated monocarboxylic acids can be used alone or in combination. Among these, acrylic acid is preferable.
飽和若しくは不飽和多塩基酸無水物(a3)としては、例えば、無水コハク酸、無水マレイン酸、テトラヒドロ無水フタル酸、無水フタル酸、メチルテトラヒドロ無水フタル酸、エチルテトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、エチルヘキサヒドロ無水フタル酸、無水イタコン酸及び無水トリメリット酸等が挙げられる。 Examples of the saturated or unsaturated polybasic acid anhydride (a3) include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, ethyltetrahydrophthalic anhydride, hexahydrophthalic anhydride Methylhexahydrophthalic anhydride, ethylhexahydrophthalic anhydride, itaconic anhydride, trimellitic anhydride, and the like.
第一の反応では、エポキシ化合物(a1)のエポキシ基と不飽和モノカルボン酸(a2)のカルボキシル基との付加反応により水酸基が生成する。第一の反応における、エポキシ化合物(a1)と不飽和モノカルボン酸(a2)との比率は、エポキシ化合物(a1)のエポキシ基1当量に対して、不飽和モノカルボン酸(a2)が0.7〜1.05当量となる比率であることが好ましく、0.8〜1.0当量となる比率であることがより好ましい。 In the first reaction, a hydroxyl group is generated by an addition reaction between the epoxy group of the epoxy compound (a1) and the carboxyl group of the unsaturated monocarboxylic acid (a2). In the first reaction, the ratio of the epoxy compound (a1) to the unsaturated monocarboxylic acid (a2) is such that the unsaturated monocarboxylic acid (a2) is 0.001 equivalent to 1 equivalent of the epoxy group of the epoxy compound (a1). The ratio is preferably 7 to 1.05 equivalent, and more preferably 0.8 to 1.0 equivalent.
エポキシ化合物(a1)と不飽和モノカルボン酸(a2)とは有機溶剤に溶解させて反応させることができる。有機溶剤としては、例えば、エチルメチルケトン、シクロヘキサノン等のケトン類、トルエン、キシレン、テトラメチルベンゼン等の芳香族炭化水素類、メチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテル等のグリコールエーテル類、酢酸エチル、酢酸ブチル、ブチルセロソルブアセテート、カルビトールアセテート等のエステル類、オクタン、デカンなどの脂肪族炭化水素類、石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサ等の石油系溶剤等を用いることができる。 The epoxy compound (a1) and the unsaturated monocarboxylic acid (a2) can be reacted by dissolving in an organic solvent. Examples of the organic solvent include ketones such as ethyl methyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether, esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate, aliphatic carbonization such as octane and decane Petroleum solvents such as hydrogen, petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha can be used.
第一の反応では、反応を促進させるために触媒を用いることが好ましい。触媒としては、例えば、トリエチルアミン、ベンジルメチルアミン、メチルトリエチルアンモニウムクロライド、ベンジルトリメチルアンモニウムクロライド、ベンジルトリメチルアンモニウムブロマイド、ベンジルトリメチルアンモニウムアイオダイド、及びトリフェニルホスフィン等を用いることができる。触媒の使用量は、エポキシ化合物(a1)と不飽和モノカルボン酸(a2)の合計100質量部に対して、0.1〜10質量部とすることが好ましい。 In the first reaction, it is preferable to use a catalyst in order to accelerate the reaction. Examples of the catalyst that can be used include triethylamine, benzylmethylamine, methyltriethylammonium chloride, benzyltrimethylammonium chloride, benzyltrimethylammonium bromide, benzyltrimethylammonium iodide, and triphenylphosphine. It is preferable that the usage-amount of a catalyst shall be 0.1-10 mass parts with respect to a total of 100 mass parts of an epoxy compound (a1) and unsaturated monocarboxylic acid (a2).
第一の反応において、エポキシ化合物(a1)同士又は不飽和モノカルボン酸(a2)同士、あるいはエポキシ化合物(a1)と不飽和モノカルボン酸(a2)との重合を防止するため、重合防止剤を使用することが好ましい。重合防止剤としては、例えば、ハイドロキノン、メチルハイドロキノン、ハイドロキノンモノメチルエーテル、カテコール、及びピロガロール等を用いることができる。重合防止剤の使用量は、エポキシ化合物(a1)と不飽和モノカルボン酸(a2)の合計100質量部に対して、0.01〜1質量部とすることが好ましい。第一の反応の反応温度は、60〜150℃が好ましく、80〜120℃がより好ましい。 In the first reaction, in order to prevent polymerization between the epoxy compounds (a1) or between the unsaturated monocarboxylic acids (a2) or between the epoxy compound (a1) and the unsaturated monocarboxylic acid (a2), a polymerization inhibitor is used. It is preferable to use it. As the polymerization inhibitor, for example, hydroquinone, methyl hydroquinone, hydroquinone monomethyl ether, catechol, pyrogallol and the like can be used. It is preferable that the usage-amount of a polymerization inhibitor shall be 0.01-1 mass part with respect to a total of 100 mass parts of an epoxy compound (a1) and unsaturated monocarboxylic acid (a2). 60-150 degreeC is preferable and, as for the reaction temperature of a 1st reaction, 80-120 degreeC is more preferable.
第一の反応では、必要に応じて不飽和モノカルボン酸(a2)と、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸無水物、ビフェニルテトラカルボン酸無水物等の多塩基酸無水物とを併用することができる。 In the first reaction, an unsaturated monocarboxylic acid (a2) and a polybasic acid anhydride such as trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, biphenyltetracarboxylic anhydride, etc., if necessary Can be used in combination.
第二の反応では、第一の反応で生成した水酸基及びエポキシ化合物(a1)中に元来ある水酸基が、飽和若しくは不飽和多塩基酸無水物(a3)の酸無水物基と半エステル反応すると推察される。ここでは、第一の反応によって得られる樹脂中の水酸基1当量に対して、0.1〜1.0当量の多塩基酸無水物(a3)を反応させることができる。多塩基酸無水物(a3)の量をこの範囲内で調製することによって、(a)成分の酸価を調整することができる。 In the second reaction, when the hydroxyl group formed in the first reaction and the hydroxyl group originally present in the epoxy compound (a1) undergo a half-ester reaction with the acid anhydride group of the saturated or unsaturated polybasic acid anhydride (a3). Inferred. Here, 0.1 to 1.0 equivalent of polybasic acid anhydride (a3) can be reacted with 1 equivalent of hydroxyl group in the resin obtained by the first reaction. By adjusting the amount of the polybasic acid anhydride (a3) within this range, the acid value of the component (a) can be adjusted.
上述したエチレン性不飽和基とカルボキシル基を有する樹脂としては、CCR−1218H、CCR−1159H、CCR−1222H、PCR−1050、TCR−1335H、ZAR−1035、ZAR−2001H、ZFR−1185及びZCR−1569H(以上、日本化薬株式会社製、商品名)等が商業的に入手可能である。 Examples of the resin having an ethylenically unsaturated group and a carboxyl group include CCR-1218H, CCR-1159H, CCR-1222H, PCR-1050, TCR-1335H, ZAR-1035, ZAR-2001H, ZFR-1185, and ZCR- 1569H (Nippon Kayaku Co., Ltd., trade name) etc. are commercially available.
また、本発明の(a)成分であるカルボキシル基及びエチレン性不飽和基を有する樹脂は、エチレン性不飽和基及び2つ以上の水酸基を有するエポキシアクリレート化合物(以下、「原料エポキシアクリレート」という)と、ジイソシアネート化合物(以下、「原料ジイソシアネート」という)と、カルボキシル基を有するジオール化合物(以下、「原料ジオール」という)と、を反応させて得られるポリウレタン化合物を使用することが好ましい。 The resin having a carboxyl group and an ethylenically unsaturated group as component (a) of the present invention is an epoxy acrylate compound having an ethylenically unsaturated group and two or more hydroxyl groups (hereinafter referred to as “raw material epoxy acrylate”). It is preferable to use a polyurethane compound obtained by reacting a diisocyanate compound (hereinafter referred to as “raw material diisocyanate”) and a diol compound having a carboxyl group (hereinafter referred to as “raw material diol”).
上記原料エポキシアクリレートとしては、例えば、ビスフェノールA型エポキシ化合物、ビスフェノールF型エポキシ化合物、ノボラック型エポキシ化合物、フルオレン骨格を有するエポキシ化合物等のエポキシ化合物に(メタ)アクリル酸を反応させて得られる化合物が挙げられる。 Examples of the raw material epoxy acrylate include compounds obtained by reacting (meth) acrylic acid with an epoxy compound such as a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, a novolac type epoxy compound, or an epoxy compound having a fluorene skeleton. Can be mentioned.
上記原料ジイソシアネートとしては、イソシアネート基を2つ有する化合物であれば特に制限なく適用できる。このような化合物としては、例えば、フェニレンジイソシアネート、トリレンジイソシアネート、キシリレンジイソシアネート、テトラメチルキシリレンジイソシアネート、ジフェニルメタンジイソシアネート、ナフタレンジイソシアネート、トリデンジイソシアネート、ヘキサメチレンジイソシアネート、ジシクロヘキシルメタンジイソシアネート、イソホロンジイソシアネート、アリレンスルホンエーテルジイソシアネート、アリルシアンジイソシアネート、N−アシルジイソシアネート、トリメチルヘキサメチレンジイソシアネート、1,3−ビス(イソシアネートメチル)シクロヘキサン、ノルボルナン−ジイソシアネートメチルが挙げられる。これらは一種を単独で又は二種以上を組み合わせて使用することができる。 As said raw material diisocyanate, if it is a compound which has two isocyanate groups, it can apply without a restriction | limiting in particular. Such compounds include, for example, phenylene diisocyanate, tolylene diisocyanate, xylylene diisocyanate, tetramethylxylylene diisocyanate, diphenylmethane diisocyanate, naphthalene diisocyanate, tridenic diisocyanate, hexamethylene diisocyanate, dicyclohexylmethane diisocyanate, isophorone diisocyanate, arylene sulfone. Examples include ether diisocyanate, allyl cyanide diisocyanate, N-acyl diisocyanate, trimethylhexamethylene diisocyanate, 1,3-bis (isocyanatemethyl) cyclohexane, and norbornane-diisocyanate methyl. These can be used individually by 1 type or in combination of 2 or more types.
上記原料ジオールは、分子内に水酸基を2つ有するとともに、カルボキシル基を有する化合物である。上記水酸基としては、例えば、アルコール性水酸基、フェノール性水酸基が挙げられる。感光性樹脂組成物のアルカリ水溶液による現像性を良好にする観点からは、上記水酸基はアルコール性水酸基であることが好ましい。このような原料ジオールとしては、例えば、ジメチロールプロピオン酸、ジメチロールブタン酸が挙げられる。 The raw material diol is a compound having two hydroxyl groups in the molecule and a carboxyl group. Examples of the hydroxyl group include alcoholic hydroxyl groups and phenolic hydroxyl groups. From the viewpoint of improving the developability of the photosensitive resin composition with an alkaline aqueous solution, the hydroxyl group is preferably an alcoholic hydroxyl group. Examples of such raw material diols include dimethylolpropionic acid and dimethylolbutanoic acid.
上記ポリウレタン化合物としては、例えば、下記一般式(3)で表される構造単位を有する化合物が挙げられる。 As said polyurethane compound, the compound which has a structural unit represented by following General formula (3) is mentioned, for example.
ここで、一般式(3)中、R10は水素原子又はメチル基を示し、R17は原料エポキシアクリレートの残基を示し、R18は原料ジイソシアネートの残基を示し、R19は炭素数1〜5のアルキル基を示す。なお、残基とは、原料成分から結合に供された官能基を除いた部分の構造をいう。具体的には、R17としては、例えば、ビス(4−オキシフェニル)−メタン、2,2−ビス(4−オキシフェニル)−プロパン、2,2−ビス(4−オキシフェニル)−1,1,1,3,3,3−ヘキサフルオロプロパン等のビスフェノールA型及びビスフェノールF型骨格、ノボラック骨格、フルオレン骨格等が挙げられ、R18としては、例えば、フェニレン、トリレン、キシリレン、テトラメチルキシリレン、ジフェニルメチレン、ヘキサメチレン、トリメチルヘキサメチレン、ジシクロヘキシルメチレン、イソホロン等が挙げられる。また、R19の炭素数1〜5のアルキル基としては、メチル基、エチル基、プロピル基、ブチル基、イソブチル基、ペンチル基、アミル基等が挙げられる。 Here, in General Formula (3), R 10 represents a hydrogen atom or a methyl group, R 17 represents a residue of a raw material epoxy acrylate, R 18 represents a residue of a raw material diisocyanate, and R 19 represents 1 carbon atom. Represents an alkyl group of ~ 5. In addition, a residue means the structure of the part remove | excluding the functional group used for the coupling | bonding from the raw material component. Specifically, as R 17 , for example, bis (4-oxyphenyl) -methane, 2,2-bis (4-oxyphenyl) -propane, 2,2-bis (4-oxyphenyl) -1, Examples thereof include bisphenol A-type skeletons such as 1,1,3,3,3-hexafluoropropane and bisphenol F-type skeletons, novolak skeletons, fluorene skeletons, and the like. Examples of R 18 include phenylene, tolylene, xylylene, tetramethylxylylene, and the like. Lene, diphenylmethylene, hexamethylene, trimethylhexamethylene, dicyclohexylmethylene, isophorone and the like. The alkyl group having 1 to 5 carbon atoms for R 19, a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl group, a pentyl group, amyl group.
なお、一般式(3)中に複数ある基は、それぞれ同一でも異なっていてもよい。また、上記ポリウレタン化合物の末端が水酸基である場合、当該水酸基は、飽和若しくは不飽和多塩基酸無水物で処理されていてもよい。 A plurality of groups in general formula (3) may be the same or different. Moreover, when the terminal of the polyurethane compound is a hydroxyl group, the hydroxyl group may be treated with a saturated or unsaturated polybasic acid anhydride.
また、一般式(3)においては、原料エポキシアクリレートに由来する構造単位と、原料ジオールに由来する構造単位とが、原料ジイソシアネートに由来する構造単位を介して交互に重合された構造となっているが、原料エポキシアクリレートに由来する構造単位と、原料ジオールに由来する構造単位とが、原料ジイソシアネートに由来する構造単位を介してブロック的に重合された構造であってもよい。 Further, in the general formula (3), the structural unit derived from the raw material epoxy acrylate and the structural unit derived from the raw material diol are alternately polymerized via the structural unit derived from the raw material diisocyanate. However, a structure in which a structural unit derived from a raw material epoxy acrylate and a structural unit derived from a raw material diol are polymerized in a block manner via a structural unit derived from a raw material diisocyanate may be used.
(a)成分としては、一般式(3)で表される化合物の中でも、ポリウレタンの主骨格の一つとなる原料エポキシアクリレートのハードセグメント部、すなわちR17が、ビスフェノールA型構造のものが好ましい。このような化合物は、UXE−3011、UXE−3012、UXE−3024(日本化薬株式会社製)等として商業的に入手可能である。これらは単独で、又は二種類以上を組み合わせて使用することができる。 As the component (a), among the compounds represented by the general formula (3), it is preferable that the hard segment part of the raw material epoxy acrylate which is one of the main skeletons of polyurethane, that is, R 17 has a bisphenol A structure. Such a compound is commercially available as UXE-3011, UXE-3012, UXE-3024 (manufactured by Nippon Kayaku Co., Ltd.) and the like. These can be used alone or in combination of two or more.
(a)成分は、その酸価が、20〜180mgKOH/gであることが好ましく、30〜150mgKOH/gであることがより好ましく、40〜120mgKOH/gであることが更に好ましい。当該酸価をこのような範囲とすることにより、アルカリ水溶液による感光性樹脂組成物の現像性を向上させ、解像度を向上させることができる。 The component (a) has an acid value of preferably 20 to 180 mgKOH / g, more preferably 30 to 150 mgKOH / g, and still more preferably 40 to 120 mgKOH / g. By making the said acid value into such a range, the developability of the photosensitive resin composition by alkaline aqueous solution can be improved, and the resolution can be improved.
ここで、酸価は以下の方法により測定することができる。まず、測定樹脂溶液約1gを精秤した後、その樹脂溶液にアセトンを30g添加し、樹脂溶液を均一に溶解する。次いで、指示薬であるフェノールフタレインをその溶液に適量添加して、0.1NのKOH水溶液を用いて滴定を行う。そして、下記式(α)により酸価を算出する。 Here, the acid value can be measured by the following method. First, after precisely weighing about 1 g of the measurement resin solution, 30 g of acetone is added to the resin solution to uniformly dissolve the resin solution. Next, an appropriate amount of phenolphthalein as an indicator is added to the solution, and titration is performed using a 0.1N aqueous KOH solution. Then, the acid value is calculated by the following formula (α).
A=10×Vf×56.1/(Wp×I) …(α) A = 10 × Vf × 56.1 / (Wp × I) (α)
式(α)中、Aは酸価(mgKOH/g)を示し、VfはKOHの滴定量(mL)を示し、Wpは測定樹脂溶液質量(g)を示し、Iは測定樹脂溶液の不揮発分の割合(質量%)を示す。 In the formula (α), A represents the acid value (mgKOH / g), Vf represents the titration amount (mL) of KOH, Wp represents the measurement resin solution mass (g), and I represents the nonvolatile content of the measurement resin solution. The ratio (mass%) is shown.
また、(a)成分の重量平均分子量は、塗膜性の観点から、3000〜30000であることが好ましく、5000〜20000であることがより好ましく、7000〜15000であることが更に好ましい。これらは単独で又は分子量の異なる樹脂を二種以上組み合わせて使用してもよい。 In addition, the weight average molecular weight of the component (a) is preferably 3000 to 30000, more preferably 5000 to 20000, and still more preferably 7000 to 15000 from the viewpoint of coating properties. These may be used alone or in combination of two or more resins having different molecular weights.
なお、本明細書において、重量平均分子量(Mw)は、ゲルパーミエーションクロマトグラフィー(GPC)による標準ポリスチレン換算値から求めた値をいう。なお、GPCにおける測定の条件は以下のとおりである。
機種:日立L6000
検出:L3300RI
カラム:Gelpack GL−R440 + GL−R450 + GL−R400M
カラム仕様:直径10.7mm×300mm
溶媒:THF
試料濃度:NV(不揮発分)40質量%の樹脂溶液を120mg採取、5mLのTHFに溶解
注入量:200μL
圧力:49Kg・f/cm2
流量:2.05mL/min
In addition, in this specification, a weight average molecular weight (Mw) means the value calculated | required from the standard polystyrene conversion value by gel permeation chromatography (GPC). The measurement conditions in GPC are as follows.
Model: Hitachi L6000
Detection: L3300RI
Column: Gelpack GL-R440 + GL-R450 + GL-R400M
Column specifications: Diameter 10.7mm x 300mm
Solvent: THF
Sample concentration: 120 mg of NV (non-volatile content) 40% by mass of resin solution was collected and dissolved in 5 mL of THF. Injection amount: 200 μL
Pressure: 49Kg · f / cm 2
Flow rate: 2.05 mL / min
<(b)成分;エチレン性不飽和基を有する光重合性モノマー>
本発明において(b)成分は特に制限無く用いることができるが、HAST耐性の更なる向上の為、エチレン性不飽和基とトリシクロデカン構造とを有する光重合性モノマー又はビスフェノールA系(メタ)アクリレート化合物を含有することが好ましい。
<(B) component; photopolymerizable monomer having an ethylenically unsaturated group>
In the present invention, the component (b) can be used without any particular limitation, but for further improvement of HAST resistance, a photopolymerizable monomer having an ethylenically unsaturated group and a tricyclodecane structure or a bisphenol A-based (meth). It is preferable to contain an acrylate compound.
ビスフェノールA系(メタ)アクリレート化合物としては、例えば、2,2−ビス(4−((メタ)アクリロキシポリエトキシ)フェニル)プロパン、2,2−ビス(4−((メタ)アクリロキシポリプロポキシ)フェニル)プロパン、2,2−ビス(4−((メタ)アクリロキシポリブトキシ)フェニル)プロパン、2,2−ビス(4−((メタ)アクリロキシポリエトキシポリプロポキシ)フェニル)プロパン等が挙げられる。 Examples of bisphenol A-based (meth) acrylate compounds include 2,2-bis (4-((meth) acryloxypolyethoxy) phenyl) propane and 2,2-bis (4-((meth) acryloxypolypropoxy). ) Phenyl) propane, 2,2-bis (4-((meth) acryloxypolybutoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxypolyethoxypolypropoxy) phenyl) propane, etc. Can be mentioned.
2,2−ビス(4−((メタ)アクリロキシポリエトキシ)フェニル)プロパンとしては、例えば、2,2−ビス(4−((メタ)アクリロキシジエトキシ)フェニル)プロパン、2,2−ビス(4−((メタ)アクリロキシペンタエトキシ)フェニル)プロパン、2,2−ビス(4−((メタ)アクリロキシペンタデカエトキシ)フェニル)等が挙げられ、2,2−ビス(4−(メタクリロキシペンタエトキシ)フェニル)プロパンは、BPE−500(製品名、新中村化学工業株式会社製)、FA−321M(製品名、日立化成工業株式会社)として商業的に入手可能であり、2,2−ビス(4−(メタクリロキシペンタデカエトキシ)フェニル)は、BPE−1300(商品名、新中村化学工業株式会社製)として商業的に入手可能である。これらは単独で又は2種類以上を組み合わせて用いることができる。 Examples of 2,2-bis (4-((meth) acryloxypolyethoxy) phenyl) propane include 2,2-bis (4-((meth) acryloxydiethoxy) phenyl) propane, 2,2- And bis (4-((meth) acryloxypentaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloxypentadecaethoxy) phenyl) and the like, and 2,2-bis (4- (Methacryloxypentaethoxy) phenyl) propane is commercially available as BPE-500 (product name, Shin-Nakamura Chemical Co., Ltd.) and FA-321M (product name, Hitachi Chemical Co., Ltd.). , 2-bis (4- (methacryloxypentadecaethoxy) phenyl) is commercially available as BPE-1300 (trade name, manufactured by Shin-Nakamura Chemical Co., Ltd.). That. These can be used alone or in combination of two or more.
本発明では、(b)成分として、エチレン性不飽和基とトリシクロデカン構造とを有する光重合性モノマーを含むことが好ましい。 In the present invention, the component (b) preferably contains a photopolymerizable monomer having an ethylenically unsaturated group and a tricyclodecane structure.
上記エチレン性不飽和基とトリシクロデカン構造とを有する光重合性モノマーは、トリシクロデカン構造を有する光重合性モノマーであれば特に制限はないが、例えば、ジメチロールトリシクロデカンジアクリレート、ジメチロール、トリシクロデカンジメタクリレート、トリシクロデカンジオールジアクリレート及びトリシクロデカンジオールジメタクリレートからなる群から選択される1種以上であると好ましい。これらに該当する化合物は、NKエステルDCP、NKエステルA−DCP(いずれも新中村化学工業株式会社製)として入手可能である。 The photopolymerizable monomer having an ethylenically unsaturated group and a tricyclodecane structure is not particularly limited as long as it is a photopolymerizable monomer having a tricyclodecane structure. For example, dimethylol tricyclodecane diacrylate, dimethylol , Tricyclodecane dimethacrylate, tricyclodecane diol diacrylate, and tricyclodecane diol dimethacrylate are preferable. Compounds corresponding to these are available as NK ester DCP and NK ester A-DCP (both manufactured by Shin-Nakamura Chemical Co., Ltd.).
また、上記エチレン性不飽和基とトリシクロデカン構造とを有する光重合性モノマーは、下記一般式(1)又は下記一般式(2)で示される部分構造を有することも好ましい。 The photopolymerizable monomer having an ethylenically unsaturated group and a tricyclodecane structure preferably has a partial structure represented by the following general formula (1) or the following general formula (2).
上記アルキレン基としては、炭素数2〜20のアルキレン基であることが好ましく、炭素数2〜10のアルキレン基であることがより好ましく、炭素数2〜6のアルキレン基であることがさらに好ましい。 The alkylene group is preferably an alkylene group having 2 to 20 carbon atoms, more preferably an alkylene group having 2 to 10 carbon atoms, and further preferably an alkylene group having 2 to 6 carbon atoms.
炭素数2〜6のアルキレン基としては、エチレン基、プロピレン基、イソプロピレン基、ブチレン基、ペンチレン基、へキシレン基等が挙げられるが、解像度、耐めっき性の点からエチレン基又はイソプロピレン基であることが好ましく、エチレン基であることが特に好ましい。 Examples of the alkylene group having 2 to 6 carbon atoms include an ethylene group, a propylene group, an isopropylene group, a butylene group, a pentylene group, and a hexylene group. From the viewpoint of resolution and plating resistance, an ethylene group or an isopropylene group. It is preferred that it is ethylene group.
上記アリーレン基としては、炭素数は6〜14のアリーレン基であることが好ましく、炭素数6〜10のアリーレン基であることがより好ましい。このようなアリーレン基としては、フェニレン、ナフチレン等が挙げられる。 The arylene group is preferably an arylene group having 6 to 14 carbon atoms, and more preferably an arylene group having 6 to 10 carbon atoms. Examples of such an arylene group include phenylene and naphthylene.
上記(b)成分として、上記の一般式(1)又は一般式(2)で示される部分構造を有する化合物を使用する場合、(b1)トリシクロデカン構造を含むジオール化合物と、(b2)ジイソシアネート化合物と、(b3)分子中に少なくとも1個以上のエチレン性不飽和基と1個のヒドロキシル基を有する化合物とを反応させて得られるウレタン化合物であることが好ましい。 When the compound having the partial structure represented by the general formula (1) or the general formula (2) is used as the component (b), (b1) a diol compound containing a tricyclodecane structure and (b2) diisocyanate A urethane compound obtained by reacting a compound with (b3) a compound having at least one ethylenically unsaturated group and one hydroxyl group in the molecule is preferable.
上記(b2)ジイソシアネートとしては、特に制限はないが、環構造を有する化合物が好ましい。中でも、イソホロンジイソシアネートのような剛直な構造を有しているものが、耐クラック(耐熱性)の観点からより好ましい。 Although there is no restriction | limiting in particular as said (b2) diisocyanate, The compound which has a ring structure is preferable. Among these, those having a rigid structure such as isophorone diisocyanate are more preferable from the viewpoint of crack resistance (heat resistance).
また、上記(b3)分子中に少なくとも1個以上のエチレン性不飽和基と1個のヒドロキシル基を有する化合物は、架橋密度の観点から、エチレン性不飽和基を2個有しているものが好ましく、3個有しているものが、特に好ましい。 In addition, the compound (b3) having at least one ethylenically unsaturated group and one hydroxyl group in the molecule has two ethylenically unsaturated groups from the viewpoint of crosslinking density. Those having three are particularly preferred.
これらの中でも、上記ジイソシアネートが、イソホロンジイソシアネートであり、加えて、上記分子中に少なくとも1個以上のエチレン性不飽和基と1個のヒドロキシル基を有する化合物が、上記一般式(2)で示す化合物であると、さらに好ましい。そのような化合物としては、商業的には、UX−5002D−M20(日本化薬株式会社製)等がある。これらは、単独で又は二種類以上を組み合わせて使用することができる。 Among these, the diisocyanate is isophorone diisocyanate, and in addition, a compound having at least one ethylenically unsaturated group and one hydroxyl group in the molecule is represented by the general formula (2). Is more preferable. Examples of such a compound include UX-5002D-M20 (manufactured by Nippon Kayaku Co., Ltd.). These can be used alone or in combination of two or more.
上記(b)成分は、分子内にウレタン結合を有していない化合物と、分子内にウレタン結合を有している化合物を組み合わせて用いることが、ソルダーレジストに要求される諸特性を向上させる点では、好ましい。 The component (b) is a combination of a compound having no urethane bond in the molecule and a compound having a urethane bond in the molecule, which improves various properties required for the solder resist. Then, it is preferable.
その他の(b)成分としては、多価アルコールにα,β−不飽和カルボン酸を反応させて得られる化合物;グリシジル基含有化合物にα,β−不飽和カルボン酸を反応させて得られる化合物;分子内にウレタン結合を有する(メタ)アクリレート化合物等のウレタンモノマー又はウレタンオリゴマーが挙げられ、これら以外にも、ノニルフェノキシポリオキシエチレンアクリレート;γ−クロロ−β−ヒドロキシプロピル−β´−(メタ)アクリロイルオキシエチル−o−フタレート、β−ヒドロキシアルキル−β´−(メタ)アクリロイルオキシアルキル−o−フタレート等のフタル酸系化合物;(メタ)アクリル酸アルキルエステル、エチレンオキサイド変性ノニルフェニル(メタ)アクリレート等が例示可能である。これらは単独で又は2種類以上を組み合わせて使用される。 As other component (b), a compound obtained by reacting a polyhydric alcohol with an α, β-unsaturated carboxylic acid; a compound obtained by reacting a glycidyl group-containing compound with an α, β-unsaturated carboxylic acid; Examples thereof include urethane monomers or urethane oligomers such as (meth) acrylate compounds having a urethane bond in the molecule. Besides these, nonylphenoxypolyoxyethylene acrylate; γ-chloro-β-hydroxypropyl-β ′-(meth) Phthalic acid compounds such as acryloyloxyethyl-o-phthalate and β-hydroxyalkyl-β ′-(meth) acryloyloxyalkyl-o-phthalate; (meth) acrylic acid alkyl ester, ethylene oxide modified nonylphenyl (meth) acrylate Etc. can be exemplified. These may be used alone or in combination of two or more.
<(c)成分:光重合開始剤>
本発明で用いる(c)光重合開始剤としては、使用する露光機の光波長にあわせたものであれば特に制限はなく、公知のものを利用することができる。具体的には例えば、ベンゾフェノン、N,N´−テトラアルキル−4,4´−ジアミノベンゾフェノン、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタノン−1、2−メチル−1−(4−メチルチオフェニル]−2−モルフォリノプロパン−1−オン、4,4´−ビス(ジメチルアミノ)ベンゾフェノン(ミヒラーケトン)、4,4´−ビス(ジエチルアミノ)ベンゾフェノン、4−メトキシ−4´−ジメチルアミノベンゾフェノン等の芳香族ケトン;ベンジルジメチルケタール等のベンジル誘導体;2−(o−クロロフェニル)−4,5−ジフェニルイミダゾール二量体、2−(o−クロロフェニル)−4,5−ジ(m−メトキシフェニル)イミダゾール二量体、2−(o−フルオロフェニル)−4,5−ジフェニルイミダゾール二量体、2−(o−メトキシフェニル)−4,5−ジフェニルイミダゾール二量体、2,4−ジ(p−メトキシフェニル)−5−フェニルイミダゾール二量体、2−(2,4−ジメトキシフェニル)−4,5−ジフェニルイミダゾール二量体等の2,4,5−トリアリールイミダゾール二量体;N−フェニルグリシン、N−フェニルグリシン誘導体、9−フェニルアクリジン等のアクリジン誘導体;1,2−オクタンジオン,1−[4−(フェニルチオ)−,2−(o−ベンゾイルオキシム)]等のオキシムエステル化合物;7−ジエチルアミノ−4−メチルクマリン等のクマリン化合物;2,4−ジエチルチオキサントン等のチオキサントン化合物;2,4,6−トリメチルベンゾイル−ジフェニル−ホスフィンオキサイド等のアシルホスフィンオキサイド化合物が挙げられる。これらは単独で又は二種類以上を組み合わせて用いることができる。
<(C) Component: Photopolymerization initiator>
The (c) photopolymerization initiator used in the present invention is not particularly limited as long as it matches the light wavelength of the exposure machine to be used, and known ones can be used. Specifically, for example, benzophenone, N, N′-tetraalkyl-4,4′-diaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, 2-methyl- 1- (4-methylthiophenyl] -2-morpholinopropan-1-one, 4,4′-bis (dimethylamino) benzophenone (Michler ketone), 4,4′-bis (diethylamino) benzophenone, 4-methoxy-4 Aromatic ketones such as'-dimethylaminobenzophenone; benzyl derivatives such as benzyldimethyl ketal; 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (M-methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5-diphe Nilimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5-phenylimidazole dimer, 2- (2, 2,4,5-triarylimidazole dimers such as 4-dimethoxyphenyl) -4,5-diphenylimidazole dimer; acridine derivatives such as N-phenylglycine, N-phenylglycine derivatives, 9-phenylacridine; Oxime ester compounds such as 1,2-octanedione and 1- [4- (phenylthio)-, 2- (o-benzoyloxime)]; Coumarin compounds such as 7-diethylamino-4-methylcoumarin; 2,4-diethyl Thioxanthone compounds such as thioxanthone; 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide Acylphosphine oxide compounds and the like. These may be used alone or in combinations of two or more.
これらの中でも、芳香族ケトンを用いることが好ましく、2−メチル−1−(4−メチルチオフェニル)−2−モルフォリノプロパン−1−オンを用いることがより好ましい。また、(c)光重合開始剤として芳香族ケトンを用いる場合、増感剤として、チオキサントン化合物を含むことが好ましい。これにより、開口形状をより良好にできる。 Among these, it is preferable to use an aromatic ketone, and it is more preferable to use 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one. Moreover, (c) When using an aromatic ketone as a photoinitiator, it is preferable that a thioxanthone compound is included as a sensitizer. Thereby, an opening shape can be made more favorable.
チオキサントン化合物としては、例えば、2−クロロチオキサントン、2−メチルチオキサントン、2,4−ジメチルチオキサントン、イソプロピルチオキサントン、2,4−ジクロロチオキサントン、2,4−ジエチルチオキサントン、2,4−ジイソプロピルチオキサントンが挙げられ、中でも2,4−ジエチルチオキサントンを含むことがより好ましい。2,4−ジエチルチオキサントンは、KAYACURE−DETX(日本化薬株式会社製、製品名)として商業的に入手可能である。 Examples of the thioxanthone compound include 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropylthioxanthone. Among these, it is more preferable to contain 2,4-diethylthioxanthone. 2,4-Diethylthioxanthone is commercially available as KAYACURE-DETX (manufactured by Nippon Kayaku Co., Ltd., product name).
また、レジスト形状をより良好にする観点から、ホスフィンオキサイド化合物を用いることも好ましい。そのような化合物としては、例えば、2,4,6−トリメチルベンゾイル−ジフェニル−フォスフィンオキサイド、ビス(2,4,6−トリメチルベンゾイル)−フェニルホスフィンオキサイド、ビス(2,6−ジメトキシベンゾイル)−2,4,4−トリメチル−ペンチルホスフィンオキサイドが挙げられる。それぞれ、DAROCURE−TPO、IRGACURE−819(いずれもチバ・ジャパン株式会社製、商品名)として商業的に入手可能である。 Moreover, it is also preferable to use a phosphine oxide compound from the viewpoint of improving the resist shape. Examples of such compounds include 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2,6-dimethoxybenzoyl)- 2,4,4-trimethyl-pentylphosphine oxide is mentioned. These are commercially available as DAROCURE-TPO and IRGACURE-819 (both manufactured by Ciba Japan Co., Ltd., trade names).
また、(c)光重合開始剤として、ホスフィンオキサイド化合物を用いる場合、感度向上を目的にオキシムエステルを有する化合物をさらに含有することが好ましい。上記オキシムエステルを有する化合物としては、例えば、(2−(アセチルオキシイミノメチル)チオキサンテン−9−オン)、(1,2−オクタンジオン,1−[4−(フェニルチオ)−,2−(o−ベンゾイルオキシム)]、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(o−アセチルオキシム))が挙げられる。市販品としては、IRGACURE−OXE01、IRGACURE−OXE02(いずれもチバ・スペシャルティ・ケミカルズ社製)が挙げられる。 Moreover, when using a phosphine oxide compound as (c) photoinitiator, it is preferable to further contain the compound which has oxime ester for the purpose of a sensitivity improvement. Examples of the compound having the oxime ester include (2- (acetyloxyiminomethyl) thioxanthen-9-one), (1,2-octanedione, 1- [4- (phenylthio)-, 2- (o -Benzoyloxime)], ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (o-acetyloxime)). Examples of commercially available products include IRGACURE-OXE01 and IRGACURE-OXE02 (both manufactured by Ciba Specialty Chemicals).
<(d)成分:塩素含有量が500ppm以下であるエポキシ樹脂>
本発明で用いる(d)成分の塩素含有量が500ppm以下であるエポキシ樹脂としては、上記の塩素含有量を満たす高純度なエポキシ樹脂を用いる。一般的にエポキシ樹脂は、エピクロルヒドリンを反応させて得られるが、その反応の際に不純物として発生する塩素や加水分解性塩素を分子蒸留などにより除去する処理が行われ、その含有量が少ないものである。
<(D) component: epoxy resin with chlorine content of 500 ppm or less>
As the epoxy resin in which the chlorine content of the component (d) used in the present invention is 500 ppm or less, a high-purity epoxy resin that satisfies the above chlorine content is used. In general, epoxy resins are obtained by reacting epichlorohydrin, but the chlorine and hydrolyzable chlorine generated as impurities during the reaction are removed by molecular distillation, etc., and their content is low. is there.
塩素含有量を少なくするには、(1)1,2−プロピレンクロルヒドリン、(2)副反応である1,3−プロピレンクロルヒドリン、(3)(1)がエポキシ化される前にエピクロルヒドリンと反応したクロロメチル化等のような未反応物を、水酸化アルカリなどにより脱塩化水素化しエポキシ基とする方法として、トルエン、メチルイソブチルケトンなどの溶剤に溶解し、水酸化ナトリウム、水酸化カリウムなどのアルカリ金属水酸化物の水溶液を加えて反応を行い、閉環を確実なものにすることも出来る。この場合アルカリ金属水酸化物の使用量はエポキシ化に使用したフェノール性樹脂の水酸基1モルに対して通常0.01〜0.3モル、好ましくは0.05〜0.2モルである。反応温度は通常50〜120℃、反応時間は通常0.5〜2時間である。反応終了後、生成した塩を濾過、水洗などにより除去し、更に加熱減圧下溶剤を留去する。また、エポキシ樹脂を分子蒸留して得ることができる。 To reduce the chlorine content, (1) 1,2-propylene chlorohydrin, (2) 1,3-propylene chlorohydrin as a side reaction, (3) before (1) is epoxidized As a method of dehydrochlorinating an unreacted substance such as chloromethylation reacted with epichlorohydrin to an epoxy group by dehydrochlorination with an alkali hydroxide or the like, it is dissolved in a solvent such as toluene or methyl isobutyl ketone, and then sodium hydroxide, hydroxide The reaction can be carried out by adding an aqueous solution of an alkali metal hydroxide such as potassium to ensure ring closure. In this case, the amount of the alkali metal hydroxide used is usually 0.01 to 0.3 mol, preferably 0.05 to 0.2 mol, relative to 1 mol of the hydroxyl group of the phenolic resin used for epoxidation. The reaction temperature is usually 50 to 120 ° C., and the reaction time is usually 0.5 to 2 hours. After completion of the reaction, the formed salt is removed by filtration, washing with water, etc., and the solvent is further distilled off under heating and reduced pressure. In addition, the epoxy resin can be obtained by molecular distillation.
上記エポキシ樹脂の市販品としては、例えば、分子蒸留し高純度化している、YD−8125、YDF−8170C、ZX−1059やYD−825GS、YDF−870GS、ZX−1658、ZX−1627(製品名、東都化成株式会社製)、YX−8000、YX−8034(製品名、ジャパンエポキシレジン株式会社製)、N−655EXP−S、N−665EXP、N−670EXP−S、N−672EXP、N−685EXP−S、(製品名、DIC株式会社製)、R140P、R140S、R140Q(製品名、三井化学株式会社製)、ED−509S、ED−518S(株式会社ADEKA製)、NC−3000H(製品名、日本化薬株式会社製)が挙げられる。 Examples of commercially available epoxy resins include YD-8125, YDF-8170C, ZX-1059, YD-825GS, YDF-870GS, ZX-1658, and ZX-1627 (product names), which are purified by molecular distillation. , Manufactured by Toto Kasei Co., Ltd.), YX-8000, YX-8034 (product name, manufactured by Japan Epoxy Resin Co., Ltd.), N-655EXP-S, N-665EXP, N-670EXP-S, N-672EXP, N-685EXP -S, (product name, manufactured by DIC Corporation), R140P, R140S, R140Q (product name, manufactured by Mitsui Chemicals), ED-509S, ED-518S (manufactured by ADEKA Corporation), NC-3000H (product name, Nippon Kayaku Co., Ltd.).
本発明に用いられるエポキシ樹脂としては、高純度であれば良く、上記に限られるものではない。また、上記エポキシ樹脂であって、室温(25℃)で固体であり、軟化点が30℃〜100℃、さらに望ましくは軟化点が50℃〜100℃であるエポキシ樹脂を用いることが望ましい。さらに、各種信頼性の観点からビスフェノールF型エポキシ樹脂を用いることが好ましい。 The epoxy resin used in the present invention is not limited to the above as long as it has a high purity. Moreover, it is desirable to use the epoxy resin which is solid at room temperature (25 ° C.) and has a softening point of 30 ° C. to 100 ° C., more preferably a softening point of 50 ° C. to 100 ° C. Furthermore, it is preferable to use a bisphenol F type epoxy resin from the viewpoint of various reliability.
感光性樹脂組成物中の各成分の含有量は、成分(a)と(b)の合計100重量部に対して、成分(a)が30〜80重量部、成分(b)20〜70重量部となることが好ましい。更には成分(a)が40〜75重量部、成分(b)25〜60重量部を配合してあることがより好ましい。また、成分(c)は0.1〜30重量部、好ましくは、0.1〜20重量部、更に好ましくは0.1〜10重量部を配合してあることが好ましい。成分(d)は3〜50重量部であることが好ましく、更に5〜40重量部であることが好ましい。多すぎた場合は、残存エポキシ成分によりHAST耐性が劣化する可能性があり、少なすぎた場合は、充分な硬化膜特性を得られない可能性がある。 The content of each component in the photosensitive resin composition is 30 to 80 parts by weight of component (a) and 20 to 70 parts by weight of component (b) with respect to 100 parts by weight of the total of components (a) and (b). It is preferable to become a part. Furthermore, it is more preferable that the component (a) is blended in an amount of 40 to 75 parts by weight and the component (b) in an amount of 25 to 60 parts by weight. In addition, the component (c) is blended in an amount of 0.1 to 30 parts by weight, preferably 0.1 to 20 parts by weight, and more preferably 0.1 to 10 parts by weight. The component (d) is preferably 3 to 50 parts by weight, and more preferably 5 to 40 parts by weight. If the amount is too large, the HAST resistance may deteriorate due to the residual epoxy component, and if the amount is too small, sufficient cured film characteristics may not be obtained.
なお、本発明で用いる感光性樹脂組成物は、上記した(a)〜(d)成分に加えて所望の特性に応じて、その他の成分を更に含んでもよい。 In addition to the above-described components (a) to (d), the photosensitive resin composition used in the present invention may further include other components according to desired characteristics.
その他の成分としては(e)成分のエポキシ樹脂の硬化促進剤(e)があるが、特に制限はなく、例えば、ジシアンジアミド、ベンジルジメチルアミン、4−(ジメチルアミノ)−N,N−ジメチルベンジルアミン、4−メトキシ−N,N−ジメチルベンジルアミン、4−メチル−N,N−ジメチルベンジルアミンなどのアミン化合物;トリエチルベンジルアンモニウムクロリドなどの4級アンモニウム塩化合物;ジメチルアミンなどのブロックイソシアネート化合物;イミダゾール、2−メチルイミダゾール、2−エチルイミダゾール、2−エチル−4−メチルイミダゾール、2−フェニルイミダゾール、4−フェニルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−(2−シアノエチル)−2−エチル−4−メチルイミダゾールなどのイミダゾール誘導体二環式アミジン化合物及びその塩;トリフェニルホスフィンなどのリン化合物;メラミン、グアナミン、アセトグアナミン、ベンゾグアナミンなどのグアナミン化合物;2,4−ジアミノ−6−メタクリロイルオキシエチル−s−トリアジン、2−ビニル−2,4−ジアミノ−s−トリアジン、2−ビニル−4,6−ジアミノ−s−トリアジン・イソシアヌル酸付加物、2,4−ジアミノ−6−メタクリロイルオキシエチル−s−トリアジン・イソシアヌル酸付加物などのs−トリアジン誘導体、三フッ化ホウ素−アミンコンプレックス、有機ヒドラジド類、無水フタル酸、無水トリメリット酸、エチレングリコールビス(アンヒドロトリメリテート)、グリセロールトリス(アンヒドロトリメリテート)、ベンゾフェノンテトラカルボン酸無水物などの芳香族酸無水物、無水マレイン酸、テトラヒドロ無水フタル酸などの脂肪族酸無水物類、ポリビニルフェノール、ポリビニルフェノール臭素化物、フェノールノボラック、アルキルフェノールノボラックなどのポリフェノール類などを用いることができる。 Other components include the epoxy resin curing accelerator (e) of component (e), but there is no particular limitation. For example, dicyandiamide, benzyldimethylamine, 4- (dimethylamino) -N, N-dimethylbenzylamine Amine compounds such as 4-methoxy-N, N-dimethylbenzylamine and 4-methyl-N, N-dimethylbenzylamine; quaternary ammonium salt compounds such as triethylbenzylammonium chloride; blocked isocyanate compounds such as dimethylamine; imidazole 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, 1- (2-cyanoethyl) -2-ethyl -4-methyli Imidazole derivative bicyclic amidine compounds such as dazole and salts thereof; phosphorus compounds such as triphenylphosphine; guanamine compounds such as melamine, guanamine, acetoguanamine and benzoguanamine; 2,4-diamino-6-methacryloyloxyethyl-s-triazine 2-vinyl-2,4-diamino-s-triazine, 2-vinyl-4,6-diamino-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, S-triazine derivatives such as isocyanuric acid adducts, boron trifluoride-amine complexes, organic hydrazides, phthalic anhydride, trimellitic anhydride, ethylene glycol bis (anhydrotrimellitic acid), glycerol tris (anhydrotrimellitic acid) Tate , Aromatic acid anhydrides such as benzophenone tetracarboxylic anhydride, aliphatic acid anhydrides such as maleic anhydride and tetrahydrophthalic anhydride, polyphenols such as polyvinylphenol, polyvinylphenol bromide, phenol novolac, alkylphenol novolac, etc. Can be used.
これらの中でも、ジシアンジアミド、イミダゾール、2−メチルイミダゾール、2−エチルイミダゾール、2−ビニル−4,6−ジアミノ−s−トリアジン・イソシアヌル酸付加物などが好ましい。これらは1種単独で使用してもよく、2種以上を併用してもよい。使用量としては、(a)成分と(b)成分の総量100質量部に対して0.1〜10質量%で使用されるのが好ましい。 Among these, dicyandiamide, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-vinyl-4,6-diamino-s-triazine / isocyanuric acid adduct and the like are preferable. These may be used alone or in combination of two or more. As a usage-amount, it is preferable to be used at 0.1-10 mass% with respect to 100 mass parts of total amounts of (a) component and (b) component.
本発明の感光性樹脂組成物は特に銅等の金属との密着が必要とされる場合、密着性向上剤として、メラミン、ジシアンジアミド、トリアジン化合物及びその誘導体、イミダゾール系、チアゾール系、トリアゾール系、シランカップリング剤等の添加剤類を用いることができる。例えば、メラミン、アセトグアナミン、ベンゾグアナミン、メラミン−フェノール−ホルマリン樹脂、ジシアンジアミド、四国化成工業株式会社製;2MZ−AZINE(2,4−ジアミノ−6−[2´−メチルイミダゾリル−(1´)]−エチル−s−トリアジン)、2E4MZ−AZINE(2,4−ジアミノ−6−[2´−エチル−4´−メチルイミダゾリル−(1´)]−エチル−s−トリアジン)、C11Z−AZINE(2,4−ジアミノ−6−[2´−ウンデシルイミダゾリル−(1´)]−エチル−s−トリアジン)、2MA−OK(2,4−ジアミノ−6−[2´−メチルイミダゾリル−(1´)]−エチル−s−トリアジンイソシアヌル酸付加物)が挙げられる。あるいはエチルジアミノ−s−トリアジン、2,4−ジアミノ−s−トリアジン、2,4−ジアミノ−6−キシリル−s−トリアジン等のトリアジン誘導体類が挙げられる。これらの化合物は銅回路との密着性を上げ耐PCT性を向上させ、HAST耐性にも効果がある。これらは(a)成分と(b)成分の総量100質量部に対して、0.1〜10質量%で使用されるのが好ましい。 The photosensitive resin composition of the present invention is a melamine, dicyandiamide, triazine compound and derivatives thereof, imidazole, thiazole, triazole, silane as adhesion improvers, particularly when adhesion with metals such as copper is required. Additives such as coupling agents can be used. For example, melamine, acetoguanamine, benzoguanamine, melamine-phenol-formalin resin, dicyandiamide, manufactured by Shikoku Kasei Kogyo Co., Ltd .; 2MZ-AZINE (2,4-diamino-6- [2'-methylimidazolyl- (1 ')]- Ethyl-s-triazine), 2E4MZ-AZINE (2,4-diamino-6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine), C11Z-AZINE (2, 4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine), 2MA-OK (2,4-diamino-6- [2'-methylimidazolyl- (1')) ] -Ethyl-s-triazine isocyanuric acid adduct). Alternatively, triazine derivatives such as ethyldiamino-s-triazine, 2,4-diamino-s-triazine, and 2,4-diamino-6-xylyl-s-triazine are exemplified. These compounds increase adhesion with a copper circuit and improve PCT resistance, and are also effective in HAST resistance. These are preferably used in an amount of 0.1 to 10% by mass based on 100 parts by mass of the total amount of the component (a) and the component (b).
これらの中でも、メラミン又はジシアンジアミドを含むことが好ましく、メラミン又はジシアンジアミドの双方を含むことがより好ましい。 Among these, it is preferable that melamine or dicyandiamide is included, and it is more preferable that both melamine or dicyandiamide are included.
また、本発明では、密着性、硬度等の特性を向上する目的で必要に応じて無機フィラーを用いることが好ましい。無機フィラーとしては、例えば、硫酸バリウム、チタン酸バリウム、粉状酸化珪素、無定形シリカ、タルク、クレー、焼成カオリン、炭酸マグネシウム、炭酸カルシウム、酸化アルミニウム、水酸化アルミニウム、雲母粉等の無機充填剤が使用できる。その使用量は、好ましくは感光性樹脂組成物の固形分に対して、0〜70質量%である。 Moreover, in this invention, it is preferable to use an inorganic filler as needed in order to improve characteristics, such as adhesiveness and hardness. Examples of inorganic fillers include inorganic fillers such as barium sulfate, barium titanate, powdered silicon oxide, amorphous silica, talc, clay, calcined kaolin, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, and mica powder. Can be used. The amount used is preferably 0 to 70% by mass with respect to the solid content of the photosensitive resin composition.
また、本発明では、必要に応じて希釈溶剤を用いることが望ましい。希釈剤としては、例えば、メタノール、エタノール、n−プロパノール、i−プロパノール、n−ブタノール、n−ペンタノール、ヘキサノール等の脂肪族アルコール類;ベンジルアルコール、シクロヘキサン等の炭化水素類;ジアセトンアルコール、3−メトキシ−1−ブタノール、アセトン、メチルエチルケトン、メチルプロピルケトン、ジエチルケトン、メチルイソブチルケトン、メチルペンチルケトン、メチルヘキシルケトン、エチルブチルケトン、ジブチルケトン等の脂肪族ケトン類;エチレングリコール、ジエチレングリコール、トリエチレングリコール、テトラエチレングリコール、プロピレングリコール、エチレングリコールモノアセテート、エチレングリコールジアセテート、プロピレングリコールモノアセテート、プロピレングリコールジアセテート、プロピレングリコールモノエチルエーテル、メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、フェニルセロソルブ、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールジブチルエーテル、メチルセロソルブアセテート、エチルセロソルブアセテート等のエチレングリコールアルキルエーテル類及びそのアセテート、ジエチレングリコールモノアルキルエーテル類及びそのアセテート、ジエチレングリコールジアルキルエーテル類、トリエチレングリコールアルキルエーテル類、プロピレングリコールアルキルエーテル類及びそのアセテート、ジプロピレングリコールアルキルエーテル類、また、トルエン、石油エーテル、石油ナフサ、水添石油ナフサ若しくはソルベントナフサ等の石油系溶剤、ギ酸エチル、ギ酸プロピル、ギ酸ブチル、ギ酸アミル、酢酸メチル、酢酸エチル、酢酸プロピル、酢酸ブチル、プロピオン酸メチル、プロピオン酸エチル、酪酸メチル、酪酸エチル等のカルボン酸エステル類、アミン、アミド類の例えば、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、N−メチル−2−ピロリドン等や、ジメチルスルホキシド、ジオキサン、テトラヒドロフラン、シクロヘキサノン、γ−ブチロラクトン、3−ヒドロキシ−2−ブタノン、4−ヒドロキシ−2−ペンタノン、6−ヒドロキシ−2−ヘキサノン等の溶剤を単独、或いは2種類以上を組み合わせて用いることができる。 In the present invention, it is desirable to use a diluting solvent as necessary. Examples of the diluent include aliphatic alcohols such as methanol, ethanol, n-propanol, i-propanol, n-butanol, n-pentanol and hexanol; hydrocarbons such as benzyl alcohol and cyclohexane; diacetone alcohol; Aliphatic ketones such as 3-methoxy-1-butanol, acetone, methyl ethyl ketone, methyl propyl ketone, diethyl ketone, methyl isobutyl ketone, methyl pentyl ketone, methyl hexyl ketone, ethyl butyl ketone, dibutyl ketone; ethylene glycol, diethylene glycol, tri Ethylene glycol, tetraethylene glycol, propylene glycol, ethylene glycol monoacetate, ethylene glycol diacetate, propylene glycol monoacetate, pro Ethylene glycol alkyl ethers such as lenglycol diacetate, propylene glycol monoethyl ether, methyl cellosolve, ethyl cellosolve, butyl cellosolve, phenyl cellosolve, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, methyl cellosolve acetate, ethyl cellosolve acetate And its acetate, diethylene glycol monoalkyl ether and its acetate, diethylene glycol dialkyl ether, triethylene glycol alkyl ether, propylene glycol alkyl ether and its acetate, dipropylene glycol alkyl ether, toluene, petroleum ether, petroleum naphtha , Hydrogenated oil naphtho Or petroleum solvents such as solvent naphtha, carboxylic acids such as ethyl formate, propyl formate, butyl formate, amyl formate, methyl acetate, ethyl acetate, propyl acetate, butyl acetate, methyl propionate, ethyl propionate, methyl butyrate, ethyl butyrate Esters, amines, amides such as N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, dioxane, tetrahydrofuran, cyclohexanone, γ-butyrolactone, 3-hydroxy Solvents such as 2-butanone, 4-hydroxy-2-pentanone, and 6-hydroxy-2-hexanone can be used alone or in combination of two or more.
また、必要に応じてフタロシアニンブルー、フタロシアニングリーン、アイオジングリーン、ジスアゾイエロー、マラカイトグリーン、クリスタルバイオレット、酸化チタン、カーボンブラック、ナフタレンブラック、アゾ系の有機顔料などの着色剤、染料等を用いることができる。更にハイドロキノン、ハイドロキノンモノメチルエーテル、tert−ブチルカテコール、ピロガロール、フェノチアジン等の重合禁止剤、ベントン、モンモリロナイト、エアロジル、アミドワックス等のチキソ性付与剤、シリコーン系、フッ素系、高分子系等の消泡剤、レベリング剤を用いることができる。 If necessary, use colorants such as phthalocyanine blue, phthalocyanine green, iodine green, disazo yellow, malachite green, crystal violet, titanium oxide, carbon black, naphthalene black, azo organic pigments, dyes, etc. it can. Furthermore, polymerization inhibitors such as hydroquinone, hydroquinone monomethyl ether, tert-butylcatechol, pyrogallol and phenothiazine, thixotropic agents such as benton, montmorillonite, aerosil and amide wax, antifoaming agents such as silicone, fluorine and polymer Leveling agents can be used.
本発明に用いる希釈剤の含有量は、支持体に塗布し感光性フィルムとして使用する場合には、塗布前のワニス状態では、全質量中の20〜70%含有させることが好ましい。その後、フィルムとした後はフィルム作製時の乾燥工程において揮発させるため、2質量%以下の溶剤含有量となるようにすることが好ましい。 When the diluent used in the present invention is applied to a support and used as a photosensitive film, it is preferably contained in an amount of 20 to 70% of the total mass in a varnish state before coating. Then, since it will volatilize in the drying process at the time of film preparation after setting it as a film, it is preferable to make it become a solvent content of 2 mass% or less.
次に、感光性フィルムについて説明する。
本発明の感光性樹脂組成物を用いて得られる感光性フィルムは、支持体と、該支持体上に形成された本発明の感光性樹脂組成物からなる感光性樹脂組成物層とを備えるものである。感光性樹脂組成物層上には、該感光性樹脂組成物層を被覆する保護フィルムを更に備えていてもよい。
Next, the photosensitive film will be described.
The photosensitive film obtained by using the photosensitive resin composition of the present invention comprises a support and a photosensitive resin composition layer comprising the photosensitive resin composition of the present invention formed on the support. It is. On the photosensitive resin composition layer, you may further provide the protective film which coat | covers this photosensitive resin composition layer.
感光性樹脂組成物層は、本発明の感光性樹脂組成物を上記溶剤又は混合溶剤に溶解して固形分30〜80質量%程度の溶液とした後に、かかる溶液を支持体上に塗布して形成することが好ましい。感光性樹脂組成物層の厚みは、用途により異なるが、加熱及び/又は熱風吹き付けにより溶剤を除去した乾燥後の厚みで、5〜200μmであることが好ましく、15〜60μmであることがより好ましい。この厚みが5μm未満では工業的に塗工困難な傾向があり、200μmを超えると本発明により奏される上述の効果が小さくなりやすく、特に、物理特性及び解像度が低下する傾向がある。 The photosensitive resin composition layer is prepared by dissolving the photosensitive resin composition of the present invention in the above solvent or mixed solvent to obtain a solution having a solid content of about 30 to 80% by mass, and then applying the solution onto a support. It is preferable to form. Although the thickness of the photosensitive resin composition layer varies depending on the use, it is preferably 5 to 200 μm and more preferably 15 to 60 μm in thickness after drying after removing the solvent by heating and / or hot air blowing. . If this thickness is less than 5 μm, it tends to be difficult to apply industrially, and if it exceeds 200 μm, the above-mentioned effects produced by the present invention tend to be reduced, and in particular, physical properties and resolution tend to decrease.
感光性フィルムが備える支持体としては、例えば、ポリエチレンテレフタレート、ポリプロピレン、ポリエチレン、ポリエステル等の耐熱性及び耐溶剤性を有する重合体フィルムなどが挙げられる。 Examples of the support provided in the photosensitive film include polymer films having heat resistance and solvent resistance such as polyethylene terephthalate, polypropylene, polyethylene, and polyester.
支持体の厚みは、5〜100μmであることが好ましく、10〜30μmであることがより好ましい。この厚みが5μm未満では現像前に支持体を剥離する際に当該支持体が破れやすくなる傾向があり、また、100μmを超えると解像度及び可撓性が低下する傾向がある。 The thickness of the support is preferably 5 to 100 μm, and more preferably 10 to 30 μm. If the thickness is less than 5 μm, the support tends to be broken when the support is peeled off before development, and if it exceeds 100 μm, the resolution and flexibility tend to decrease.
上述したような支持体と感光性樹脂組成物層との2層からなる感光性フィルム又は支持体と感光性樹脂組成物層と保護フィルムとの3層からなる感光性フィルムは、例えば、そのまま貯蔵してもよく、又は保護フィルムを介在させた上で巻芯にロール状に巻き取って保管することができる。 The photosensitive film consisting of two layers of the support and the photosensitive resin composition layer as described above or the photosensitive film consisting of three layers of the support, the photosensitive resin composition layer, and the protective film, for example, is stored as it is. Alternatively, the protective film may be interposed and wound around the core in a roll shape and stored.
本発明の感光性樹脂組成物又は感光性フィルムを用いたレジストパターンの形成方法は、初めに、公知のスクリーン印刷、ロールコータにより塗布する工程、又はラミネート等により貼り付ける工程により、レジストを形成する基板上に感光性樹脂組成物を積層する。次いで、必要に応じて上述した感光性フィルムから支持体を除去し(一般的には除去せず支持体を設けた状態で、そして、現像工程前に剥離する)、活性光線を、マスクパターンを通して、感光性樹脂組成物層の所定部分に照射して、照射部の感光性樹脂組成物層を光硬化させる露光工程を行う。照射部以外の感光性樹脂組成物層は、次の現像工程により除去される。なお、レジストを形成する基板とは、プリント配線板、半導体パッケージ用基板、フレキシブル配線板を指す。 In the resist pattern forming method using the photosensitive resin composition or photosensitive film of the present invention, first, a resist is formed by a known screen printing, a step of applying by a roll coater, or a step of applying by lamination or the like. A photosensitive resin composition is laminated on the substrate. Then, if necessary, the support is removed from the above-described photosensitive film (generally, the support is provided without being removed, and is peeled off before the development step), and actinic rays are passed through the mask pattern. Then, an exposure step of irradiating a predetermined portion of the photosensitive resin composition layer and photocuring the photosensitive resin composition layer of the irradiated portion is performed. The photosensitive resin composition layer other than the irradiated part is removed by the next development step. In addition, the board | substrate which forms a resist points out a printed wiring board, a board | substrate for semiconductor packages, and a flexible wiring board.
活性光線の光源としては、公知の光源、例えば、カーボンアーク灯、水銀蒸気アーク灯、超高圧水銀灯、高圧水銀灯、キセノンランプ等の紫外線を有効に放射するものが用いられる。また、写真用フラッド電球、太陽ランプ等の可視光を有効に放射するものも用いられる。 更に直接描画方式のダイレクトレーザ露光を用いても良い。其々のレーザ光源、露光方式に対応する成分(c)を用いることにより優れたパターンを形成することが可能となる。 As the light source of actinic light, a known light source such as a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, or a xenon lamp that emits ultraviolet rays effectively is used. Moreover, what emits visible light effectively, such as a photographic flood light bulb and a solar lamp, is also used. Further, direct drawing direct laser exposure may be used. By using the component (c) corresponding to each laser light source and exposure method, it is possible to form an excellent pattern.
現像工程では、現像液として、例えば、20〜50℃の炭酸ナトリウムの希薄溶液(0.1〜10質量%水溶液、好ましくは、1〜5質量%水溶液)等のアルカリ現像液が用いられ、スプレー、揺動浸漬、ブラッシング、スクラッピング等の公知の方法により現像する。 In the development step, an alkaline developer such as a dilute solution of sodium carbonate (0.1 to 10% by mass aqueous solution, preferably 1 to 5% by mass aqueous solution) at 20 to 50 ° C. is used as the developer. Development is performed by a known method such as rocking immersion, brushing or scraping.
アルカリ現像液としては、例えば、水酸化ナトリウム、水酸化カリウム、ケイ酸ナトリウム、アンモニア、エチルアミン、ジエチルアミン、トリエチルアミン、トリエタノールアミン、水酸化テトラメチルアンモニウム(TMAH)等のアルカリ水溶液が好適に用いられる。これらの水溶液の塩基濃度は、0.1〜10質量%とすることが好ましい。さらに、上記現像液にアルコール類や界面活性剤を添加して使用することもできる。これらはそれぞれ、現像液100質量部に対して、好ましくは0.01〜10質量部、より好ましくは0.1〜5質量部の範囲で配合することができる。 As the alkali developer, for example, an aqueous alkali solution such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH) is preferably used. The base concentration of these aqueous solutions is preferably 0.1 to 10% by mass. Furthermore, alcohols and surfactants can be added to the developer and used. Each of these can be blended in the range of preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the developer.
上記現像工程で、活性光線の照射により硬化させた感光層の所定部分を残し、前記所定部分以外の前記感光層を除去した感光層を、2価の金属イオンを含有する水溶液で処理する。前記2価の金属イオンは、Ca2+、Mg2+、Sr2+、Ba2+、Cd2+、Ni2+、Zn2+、Cu2+、Hg2+、Fe2+、Co2+、Sn2+、Pb2+、Mn2+等が挙げられ、Ca2+、Mg2+、Sr2+、Ba2+から選ばれた少なくとも一種の金属イオンであると好ましい。永久マスクレジスト表面の耐湿絶縁性が向上し、材料入手がしやすいことからCa2+、Mg2+、であることが好ましい。前記2価の金属イオンは、2価の金属イオンを含む硫酸塩、硝酸塩、塩化物塩、酢酸塩、炭酸塩、蓚酸塩、リン酸塩、水酸化物等の化合物を水に溶解、分散させて用いることが好ましい。塩基性が強いと感光層が溶解したり、剥離してしまうので弱塩基性が好ましく、硫酸塩、硝酸塩、塩化物塩、酢酸塩、炭酸塩、蓚酸塩、リン酸塩などであり、中でも溶解性の観点から硝酸塩、酢酸塩が好ましい。 In the above development step, the photosensitive layer that has been hardened by irradiation with actinic rays is left, and the photosensitive layer other than the predetermined portion is removed, and the photosensitive layer is treated with an aqueous solution containing divalent metal ions. The divalent metal ions include Ca 2+ , Mg 2+ , Sr 2+ , Ba 2+ , Cd 2+ , Ni 2+ , Zn 2+ , Cu 2+ , Hg 2+ , Fe 2+ , Co 2+ , Sn 2+ , Pb 2+ , Mn 2+, etc. And is preferably at least one metal ion selected from Ca 2+ , Mg 2+ , Sr 2+ and Ba 2+ . Ca 2+ and Mg 2+ are preferable because the moisture resistance insulation on the surface of the permanent mask resist is improved and the material is easily available. The divalent metal ions are prepared by dissolving and dispersing compounds such as sulfates, nitrates, chloride salts, acetates, carbonates, oxalates, phosphates and hydroxides containing divalent metal ions in water. Are preferably used. If the basicity is strong, the photosensitive layer dissolves or peels off. Therefore, weak basicity is preferable. Sulfates, nitrates, chlorides, acetates, carbonates, oxalates, phosphates, etc. From the viewpoint of properties, nitrates and acetates are preferred.
2価の金属イオンを含有する水溶液中の、金属イオン濃度として、1〜2000ppmが好ましく、50〜500ppmであることがより好ましく、50〜500ppmであることがさらに好ましく、50〜350ppmであることが特に好ましい。 The metal ion concentration in the aqueous solution containing divalent metal ions is preferably 1 to 2000 ppm, more preferably 50 to 500 ppm, further preferably 50 to 500 ppm, and more preferably 50 to 350 ppm. Particularly preferred.
現像工程の際、現像液に含まれる1価のナトリウムイオンやカリウムイオンがソルダーレジスト表層に取り込まれてしまい、取り込まれた1価の陽イオンは、カルボン酸と1:1のイオン結合をしているものと考えられる。上記1価の陽イオンを2価の金属イオンに置換させることで、2価の金属イオンは、カルボン酸と1:2のイオン結合をすることが可能となる。すると見かけ上ソルダーレジスト表面の架橋が向上し、HAST耐性が向上するものと考えられる。上述のように現像後、2価の金属イオンを含む水溶液により処理することでHAST耐性を向上できる。 During the development process, monovalent sodium ions and potassium ions contained in the developer are incorporated into the solder resist surface layer, and the incorporated monovalent cations form a 1: 1 ionic bond with the carboxylic acid. It is thought that there is. By substituting the monovalent cation with a divalent metal ion, the divalent metal ion can form a 1: 2 ionic bond with the carboxylic acid. Then, it seems that crosslinking of the solder resist surface apparently improves and HAST resistance improves. As described above, the HAST resistance can be improved by processing with an aqueous solution containing a divalent metal ion after development.
2価の金属イオンを含む水溶液による処理は、現像しパターンが形成された感光性樹脂組成物層と2価の金属イオンを含む水溶液とを接触させるものであり、水溶液をスプレーしたり、水溶液中に浸漬したりすることで、2価の金属イオンとパターンが形成された感光性樹脂組成物層を接触させることである。感光性樹脂組成物層表面に吸着された金属イオンは、ある程度内部に拡散され、上記のように組成物中のカルボン酸に捕捉されると思われる。処理温度や時間は、20〜60℃、5秒〜1日と、接触温度、水溶液濃度と接触時間を調整することで、取り込める金属イオンの濃度を調整でき、処理温度が高く、水溶液濃度が高く、接触時間が長いほど取り込まれる金属イオン濃度が高くなる。 The treatment with an aqueous solution containing divalent metal ions involves contacting the photosensitive resin composition layer that has been developed and formed a pattern with an aqueous solution containing divalent metal ions, and spraying the aqueous solution or in the aqueous solution. It is to make the photosensitive resin composition layer in which the divalent metal ion and the pattern were formed contact with each other. It is considered that the metal ions adsorbed on the surface of the photosensitive resin composition layer are diffused to some extent and are captured by the carboxylic acid in the composition as described above. The treatment temperature and time are 20-60 ° C., 5 seconds to 1 day, and the contact temperature, aqueous solution concentration and contact time can be adjusted to adjust the concentration of metal ions that can be taken in. The treatment temperature is high and the aqueous solution concentration is high. The longer the contact time, the higher the concentration of metal ions taken in.
取り込まれた金属イオンは、例えば、基板上の永久マスクレジストを1g削り取り、18MΩ以上の電気伝導度の純水30ccと一緒に、テトラフルオロエチレン容器中に入れ、100〜120℃で4〜8時間熱処理して、イオン成分を熱抽出させ、その後、抽出処理した試料を常温(25℃)に戻し、イオンクロマトグラフィー(DIONEX社製、型式 DXIon Chromatograph等)、原子吸光光度計(株式会社日立製作所製、型式 Z5010等)などを用いることで永久マスクレジスト中の金属陽イオン成分及び濃度を定量することができる。また、処理後の水溶液に含有される金属陽イオンの濃度をイオンクロマトグラフィーにより定量することにより、処理により置換された金属陽イオンの量を算出することができる。 For example, 1 g of the permanent mask resist on the substrate is scraped off and placed in a tetrafluoroethylene container together with 30 cc of pure water having an electric conductivity of 18 MΩ or more, and the metal ions thus taken are 4 to 8 hours at 100 to 120 ° C. After heat treatment, the ionic component is thermally extracted, and then the extracted sample is returned to room temperature (25 ° C.), ion chromatography (manufactured by DIONEX, model DXIon Chromatograph, etc.), atomic absorption photometer (manufactured by Hitachi, Ltd.) , Model Z5010 etc.) can be used to quantify the metal cation component and concentration in the permanent mask resist. Moreover, the quantity of the metal cation substituted by the process can be calculated by quantifying the concentration of the metal cation contained in the treated aqueous solution by ion chromatography.
上記現像工程、2価の金属イオンを含有する水溶液による処理後、はんだ耐熱性、耐薬品性等を向上させる目的で、高圧水銀ランプ等による紫外線照射や加熱を行うことが好ましい。紫外線を照射させる場合は必要に応じてその照射量を調整することができ、例えば、0.2〜10J/cm2程度の照射量で照射を行うこともできる。また、レジストパターンを加熱する場合は、100〜170℃程度の範囲で15〜90分程行うことが好ましい。さらに紫外線照射と加熱とを同時に行うこともでき、いずれか一方を実施した後、他方を実施することもできる。紫外線の照射と加熱とを同時に行う場合、はんだ耐熱性、耐薬品性等を効果的に付与する観点から、60〜150℃に加熱することがより好ましい。 After the development step and the treatment with the aqueous solution containing divalent metal ions, ultraviolet irradiation or heating with a high-pressure mercury lamp or the like is preferably performed for the purpose of improving solder heat resistance, chemical resistance and the like. When irradiating with ultraviolet rays, the irradiation amount can be adjusted as necessary. For example, the irradiation can be performed at an irradiation amount of about 0.2 to 10 J / cm 2 . Moreover, when heating a resist pattern, it is preferable to carry out for 15 to 90 minutes in the range of about 100-170 degreeC. Furthermore, ultraviolet irradiation and heating can be performed at the same time, and after either one is performed, the other can be performed. When performing ultraviolet irradiation and heating simultaneously, it is more preferable to heat to 60 to 150 ° C. from the viewpoint of effectively imparting solder heat resistance, chemical resistance and the like.
現像工程を終え、水洗し、上記の紫外線照射や加熱を行った後に、2価の金属イオンを含有する水溶液による処理を行うこともできる。また、2価の金属イオンを含有する水溶液による処理を現像工程終了後と、紫外線照射や加熱を行った後に再度処理することもできる。また、必要により、処理後に感光性樹脂組成物層表面に付着した余分の金属イオンを除去するため水洗や分解を行うことができる。 After completion of the development step, washing with water, and performing the above-described ultraviolet irradiation and heating, treatment with an aqueous solution containing a divalent metal ion can also be performed. Further, the treatment with an aqueous solution containing a divalent metal ion can be carried out again after the development step and after ultraviolet irradiation or heating. If necessary, washing and decomposition can be performed to remove excess metal ions adhering to the surface of the photosensitive resin composition layer after the treatment.
この感光性樹脂組成物層は、基板にはんだ付けを施した後の配線の保護膜を兼ね、良好なラミネート温度安定性、優れた解像性、優れた平坦性、耐クラック性、HAST耐性、金めっき性を有するので、プリント配線板用、半導体パッケージ基板用、フレキシブル配線板用のソルダーレジストとして有効である。 This photosensitive resin composition layer also serves as a protective film for wiring after soldering to the substrate, has good lamination temperature stability, excellent resolution, excellent flatness, crack resistance, HAST resistance, Since it has gold plating properties, it is effective as a solder resist for printed wiring boards, semiconductor package substrates, and flexible wiring boards.
このようにしてレジストパターンを備えられた基板は、その後、半導体素子などの実装(例えば、ワイヤーボンディング、はんだ接続)がなされ、そして、パソコン等の電子機器へ装着される。 The substrate provided with the resist pattern in this manner is then mounted with a semiconductor element or the like (for example, wire bonding or solder connection) and then mounted on an electronic device such as a personal computer.
以下、実施例により本発明を更に具体的に説明するが、本発明はこれらの実施例に限定されるものではない。 EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.
(感光性樹脂組成物溶液の作製)
まず、表1に示した各成分を同表に示す配合量(質量部)で混合することにより、感光性樹脂組成物溶液を得た。表1に示した各成分は、下記のものを使用した。
(Preparation of photosensitive resin composition solution)
First, the photosensitive resin composition solution was obtained by mixing each component shown in Table 1 by the compounding quantity (mass part) shown in the same table. The following components were used for each component shown in Table 1.
<(a)成分(エチレン性不飽和基とカルボキシル基を有する樹脂)>
「UXE−3024(重量平均分子量;10000)」:ウレタン変性エポキシアクリレート(日本化薬株式会社製)。
「UE−EXP−2810PM(重量平均分子量;10000)」:酸変性クレゾールノボラック型エポキシアクリレート(DIC株式会社製)。
<(A) component (resin having an ethylenically unsaturated group and a carboxyl group)>
“UXE-3024 (weight average molecular weight; 10,000)”: urethane-modified epoxy acrylate (manufactured by Nippon Kayaku Co., Ltd.).
“UE-EXP-2810PM (weight average molecular weight; 10,000)”: acid-modified cresol novolac epoxy acrylate (manufactured by DIC Corporation).
<(b)成分(エチレン性不飽和基を有する光重合性モノマー)>
「FA−321M」:2,2−ビス(4−(メタクリロキシペンタエトキシ)フェニル)プロパン(日立化成工業株式会社製)。
「NKエスペルDCP」:トリシクロデカンジメタノールジメタクリレート(新中村化学工業株式会社製)。
「UX−5002D−M20」:トリシクロデカン構造含有ウレタンアクリレート(日本化薬株式会社製)。
<(B) component (photopolymerizable monomer having an ethylenically unsaturated group)>
“FA-321M”: 2,2-bis (4- (methacryloxypentaethoxy) phenyl) propane (manufactured by Hitachi Chemical Co., Ltd.).
“NK Espel DCP”: Tricyclodecane dimethanol dimethacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.).
"UX-5002D-M20": Tricyclodecane structure-containing urethane acrylate (manufactured by Nippon Kayaku Co., Ltd.).
<(c)成分(光重合開始剤)>
「DAROCURE−TPO」:ビス(2,4,6−トリメチルベンゾイル)−フェニルホスフィンオキサイド(チバ・スペシャルティ・ケミカルズ社製)。
「IRGACURE−OXE02」:エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(O−アセチルオキシム)(チバ・スペシャルティ・ケミカルズ社製)。
「IRGACURE−907」:2−メチル−1−(4−メチルチオフェニル]−2−モルフォリノプロパン−1−オン(チバ・スペシャルティ・ケミカルズ社製)。
「KATACURE−DETX−S」:2,4−ジエチルチオキサントン(日本化薬株式会社製、製品名)。
<(C) component (photopolymerization initiator)>
“DAROCURE-TPO”: bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (manufactured by Ciba Specialty Chemicals).
“IRGACURE-OXE02”: Etanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime) (Ciba Specialty Chemicals) ).
“IRGACURE-907”: 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one (manufactured by Ciba Specialty Chemicals).
“KATACURE-DETX-S”: 2,4-diethylthioxanthone (product name) manufactured by Nippon Kayaku Co., Ltd.
<(d)成分(エポキシ樹脂)>
「NC−3000H」:分子蒸留品、ビスフェノールF型エポキシ樹脂(全塩素量450ppm、日本化薬株式会社製、商品名)。
「YD825GS」:分子蒸留品、ビスフェノールA型エポキシ樹脂(全塩素量200ppm、東都化成株式会社製、商品名)。
「YX4000H」:ビフェニル型エポキシ樹脂(全塩素量1180ppm、ジャパンエポキシレジン株式会社製、商品名)。
「エピコート825」:ビスフェノールA型エポキシ樹脂(標準品、全塩素量1880ppm、ジャパンエポキシレジン株式会社製、商品名)。
<(D) component (epoxy resin)>
“NC-3000H”: molecularly distilled product, bisphenol F type epoxy resin (total chlorine amount 450 ppm, manufactured by Nippon Kayaku Co., Ltd., trade name).
“YD825GS”: molecularly distilled product, bisphenol A type epoxy resin (total chlorine amount 200 ppm, manufactured by Tohto Kasei Co., Ltd., trade name).
“YX4000H”: biphenyl type epoxy resin (total chlorine amount 1180 ppm, manufactured by Japan Epoxy Resin Co., Ltd., trade name).
“Epicoat 825”: bisphenol A type epoxy resin (standard product, total chlorine amount 1880 ppm, manufactured by Japan Epoxy Resin Co., Ltd., trade name).
<その他成分>
「微粉メラミン」:メラミン(日産化学工業株式会社製、商品名)。
「ジシアンジアミド」:「エピキュアDICY7」(ジャパンエポキシレジン社製、商品名)。
「エスペル1108」:ポリエステル系エラストマ(日立化成工業株式会社製、商品名)。
「フタロシアニンブルー」:(東洋インキ株式会社製、商品名)。
「バリエースB−30」:硫酸バリウム「バリエースB−30」(堺化学工業株式会社製、商品名)を使用し、以下の方法で調製した硫酸バリウム分散液。
<Other ingredients>
“Fine melamine”: Melamine (trade name, manufactured by Nissan Chemical Industries, Ltd.).
“Dicyandiamide”: “Epicure DICY7” (trade name, manufactured by Japan Epoxy Resin Co., Ltd.).
“Esper 1108”: polyester elastomer (trade name, manufactured by Hitachi Chemical Co., Ltd.).
“Phthalocyanine blue”: (trade name, manufactured by Toyo Ink Co., Ltd.).
“Variace B-30”: A barium sulfate dispersion prepared by the following method using barium sulfate “Variace B-30” (trade name, manufactured by Sakai Chemical Industry Co., Ltd.).
(b)成分20質量部(固形分)、上記硫酸バリウム25質量部、及びメチルエチルケトン40質量部を、スターミルLMZ(アシザワファインテック株式会社製)で、直径1.0mmのジルコニアビーズを用い、周速12m/sにて3時間分散して、硫酸バリウム分散液を得た。硫酸バリウムは上記で調製した分散液を配合することで、感光性樹脂組成物に含有させた。 (B) 20 parts by mass (solid content) of the component, 25 parts by mass of the barium sulfate, and 40 parts by mass of methyl ethyl ketone were mixed with Starmill LMZ (manufactured by Ashizawa Finetech Co., Ltd.) using zirconia beads having a diameter of 1.0 mm. Dispersion was carried out at 12 m / s for 3 hours to obtain a barium sulfate dispersion. Barium sulfate was added to the photosensitive resin composition by blending the dispersion prepared above.
実施例及び比較例の感光性樹脂組成物溶液には、希釈剤としてメチルエチルケトン、及びN,N−ジメチルホルムアミドの質量比=1:1の混合溶液を、樹脂組成物溶液の固形分が60質量%となるように加えた。 In the photosensitive resin composition solutions of Examples and Comparative Examples, a mixed solution of methyl ethyl ketone and N, N-dimethylformamide as a diluent at a mass ratio of 1: 1 is used, and the solid content of the resin composition solution is 60% by mass. It was added to become.
<水溶液の調整> <Preparation of aqueous solution>
2価の金属イオンとしてCa2+を選択した。供給源として酢酸カルシウム(分子量=158.14(無水物)、カルシウムを25.34質量%含有)を用い、イオン交換水1リットル中に、酢酸カルシウム((CH3COO)2Ca)1.184gを溶解し、カルシウムイオンを300ppm含有する水溶液を調製した。 Ca 2+ was selected as the divalent metal ion. Calcium acetate ((CH 3 COO) 2 Ca) 1.184 g in 1 liter of ion-exchanged water using calcium acetate (molecular weight = 158.14 (anhydrous), containing 25.34% by mass of calcium) as a supply source Was dissolved to prepare an aqueous solution containing 300 ppm of calcium ions.
併せて、カルシウムイオンを全く含まないイオン交換水を用意した。
[1.184×0.2534/1000=0.0003(300ppm)]
In addition, ion-exchanged water containing no calcium ions was prepared.
[1.184 × 0.2534 / 1000 = 0.0003 (300 ppm)]
(感光性フィルムの作製)
次いで、上記で得られた感光性樹脂組成物溶液を、支持体である16μm厚のポリエチレンテレフタレートフィルム(G2−16、帝人株式会社製、商品名)上に均一に塗布することにより感光性樹脂組成物層を形成し、それを、熱風対流式乾燥機を用いて100℃で約10分間乾燥した。感光性樹脂組成物層の乾燥後の膜厚は、25μmであった。
(Preparation of photosensitive film)
Next, the photosensitive resin composition solution obtained above is uniformly coated on a 16 μm-thick polyethylene terephthalate film (G2-16, trade name, manufactured by Teijin Ltd.) as a support, thereby forming the photosensitive resin composition. A material layer was formed and dried for about 10 minutes at 100 ° C. using a hot air convection dryer. The film thickness after drying of the photosensitive resin composition layer was 25 μm.
続いて、感光性樹脂組成物層の支持体と接している側とは反対側の表面上に、ポリエチレンフィルム(NF−15、タマポリ株式会社製、商品名)を保護フィルムとして貼り合わせ、感光性フィルム(感光性エレメント)を得た。 Subsequently, on the surface of the photosensitive resin composition layer opposite to the side in contact with the support, a polyethylene film (NF-15, manufactured by Tamapoly Co., Ltd., trade name) is bonded as a protective film, and is photosensitive. A film (photosensitive element) was obtained.
(感光性フィルムの特性評価)
実施例1〜5及び比較例1〜4の感光性フィルムをそれぞれ用いて以下の各試験を行い、各感光性エレメントを用いた場合の、解像性、開口形状、金めっき耐性、はんだ耐熱性、HAST耐性について評価した。得られた結果を表2に示した。
(Characteristic evaluation of photosensitive film)
Each of the following tests was performed using the photosensitive films of Examples 1 to 5 and Comparative Examples 1 to 4, respectively, and resolution, opening shape, gold plating resistance, solder heat resistance when each photosensitive element was used. The HAST resistance was evaluated. The obtained results are shown in Table 2.
(解像性の評価)
12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(MCL E−679、日立化成工業株式会社製、商品名)の銅表面を砥粒ブラシで研磨し、水洗後、乾燥した。このプリント配線板用基板上に、前記感光性フィルムのポリエチレンフィルムを剥離して、真空加圧式ラミネータ(平坦プレス付2ステージ方式、MVLP−500、株式会社名機製作所製、商品名)を用いて、圧着圧力0.4MPa、プレス熱板温度80℃、真空引き時間20秒、ラミネートプレス時間30秒、気圧4kPa以下の条件でラミネートを行い、評価用積層体を得た。
(Resolution evaluation)
The copper surface of a printed wiring board substrate (MCL E-679, manufactured by Hitachi Chemical Co., Ltd., trade name) obtained by laminating a 12 μm thick copper foil on a glass epoxy substrate was polished with an abrasive brush, washed with water, and then dried. . The polyethylene film of the photosensitive film is peeled off on this printed wiring board substrate, and a vacuum pressure laminator (2-stage system with flat press, MVLP-500, product name, manufactured by Meiki Seisakusho Co., Ltd.) is used. Lamination was performed under the conditions of pressure bonding pressure 0.4 MPa, press hot plate temperature 80 ° C., evacuation time 20 seconds, laminate press time 30 seconds, and atmospheric pressure 4 kPa or less to obtain a laminate for evaluation.
評価用積層体上に、ネガとして直径30〜100μmの範囲で10μm刻みのビア径パターンを有するフォトツールを密着させ、株式会社オーク製作所製EXM−1201型露光機を使用して、41段ステップタブレットの現像後の残存ステップ段数が16.0となるエネルギー量で露光を行った。次いで、常温(25℃)で1時間静置した後、該積層体上のポリエチレンテレフタレートを剥離し、30℃の1質量%炭酸ナトリウム水溶液で、60秒間スプレー現像を行った後、水洗工程(イオン交換水或いはCaイオン水溶液、120秒間のスプレー水洗)を行い、レジストパターンを形成した。 A photo tool having a via diameter pattern with a diameter of 10 μm in a range of 30 to 100 μm in diameter as a negative is closely adhered on the evaluation laminate, and an EXM-1201 type exposure machine manufactured by Oak Manufacturing Co., Ltd. The exposure was performed with an energy amount such that the number of remaining steps after development of 16.0 was 16.0. Next, after standing at room temperature (25 ° C.) for 1 hour, the polyethylene terephthalate on the laminate was peeled off and spray-developed with a 1% by mass aqueous sodium carbonate solution at 30 ° C. for 60 seconds, followed by a water washing step (ion Exchange water or Ca ion aqueous solution and spray water washing for 120 seconds) were performed to form a resist pattern.
形成されたレジストパターンを実体顕微鏡で観察し、最小開口ビア径を測定し、解像性とした。解像性は、その値が小さいほど良好である。評価結果を表2に示した。 The formed resist pattern was observed with a stereomicroscope, the minimum opening via diameter was measured, and the resolution was obtained. The smaller the value, the better the resolution. The evaluation results are shown in Table 2.
(開口形状の評価)
解像性の評価を行った基板を使用し、形成されたレジストパターンの断面形状の観察を行い、以下の基準により評価した。評価結果を表2に示した。
「A」:開口の底部にソルダーレジストの裾、或いは浮きが観察できないもの。
「B」:開口の底部に裾が観察できるもの。
「C」:開口の底部にソルダーレジストの浮きが観察できるもの。
(Evaluation of opening shape)
Using the substrate on which the resolution was evaluated, the cross-sectional shape of the formed resist pattern was observed and evaluated according to the following criteria. The evaluation results are shown in Table 2.
“A”: Solder resist hem or float cannot be observed at the bottom of the opening.
“B”: The bottom can be observed at the bottom of the opening.
“C”: A solder resist float can be observed at the bottom of the opening.
(無電解Ni/Auめっき耐性の評価)
上記の解像性評価に用いた評価用積層体と同様にして、めっき耐性の評価基板を作製した。ただし、ネガとして直径200μmのビアパターンを有するフォトツールを用い、得られたレジストパターンに、株式会社オーク製作所製紫外線照射装置を使用して1J/cm2のエネルギー量で紫外線照射を行い、更に160℃で、60分間加熱処理を行うこと以外は同様にして、直径200μmのビア開口部を有するソルダーレジストを形成した評価用積層体基板を得た。この際の加熱により、表面に付着している酢酸カルシウムは、分解しアセトンと炭酸カルシウムになる。
(Evaluation of electroless Ni / Au plating resistance)
In the same manner as the evaluation laminate used for the above-described resolution evaluation, a plating resistance evaluation substrate was produced. However, using a photo tool having a via pattern with a diameter of 200 μm as a negative, the obtained resist pattern was irradiated with ultraviolet rays at an energy amount of 1 J / cm 2 using an ultraviolet irradiation device manufactured by Oak Manufacturing Co., Ltd., and further 160 An evaluation laminate substrate on which a solder resist having a via opening with a diameter of 200 μm was formed was obtained in the same manner except that heat treatment was performed at 60 ° C. for 60 minutes. By heating at this time, calcium acetate adhering to the surface is decomposed into acetone and calcium carbonate.
上記で得られた評価用積層体基板に対し、無電解ニッケルめっき(上村工業株式会社製、商品名ニムデンNPR−4)を施し(15分間処理)、更に無電解金めっき(上村工業株式会社製、商品名オーリカルTKK−511)を施した(15分間処理)。 The laminated substrate for evaluation obtained above is subjected to electroless nickel plating (trade name Nimden NPR-4, manufactured by Uemura Kogyo Co., Ltd.) (15 minutes treatment), and further electroless gold plating (manufactured by Uemura Kogyo Co., Ltd.). The product name Orical TKK-511) was applied (15 minutes treatment).
このようにしてめっきが施された評価用基板に対し、ソルダーレジスト底部へのめっき液の染み込み、並びに、基板からのソルダーレジストの浮き及び剥離を100倍の金属顕微鏡により観察し、以下の判定基準により、無電解Ni/Auめっき耐性を評価した。評価結果を表2に示した。
「A」:ソルダーレジスト底部への染み込みが認められないもの。
「B」:ソルダーレジスト底部への染み込みが1〜10μmまでのもの。
「C」:上記以外のもの。
For the evaluation substrate thus plated, the plating solution soaked into the bottom of the solder resist, and the solder resist floating and peeling from the substrate were observed with a 100-fold metal microscope, and the following criteria Thus, the electroless Ni / Au plating resistance was evaluated. The evaluation results are shown in Table 2.
“A”: No penetration into the solder resist bottom.
“B”: A penetration of 1 to 10 μm into the bottom of the solder resist.
“C”: other than above.
(はんだ耐熱性の評価)
上記の解像性評価に用いた評価用積層体と同様にして、はんだ耐熱性の評価基板を作製した。ただし、ネガとして2mm角の格子パターンを有するフォトツールを用い、得られたレジストパターンに、株式会社オーク製作所製紫外線照射装置を使用して1J/cm2のエネルギー量で紫外線照射を行い、更に160℃で、60分間加熱処理を行うこと以外は同様にして、2mm角の格子パターンを有するソルダーレジストを形成した評価用積層体基板を得た。
(Evaluation of solder heat resistance)
In the same manner as the evaluation laminate used for the above-described resolution evaluation, a solder heat resistance evaluation board was produced. However, using a photo tool having a 2 mm square lattice pattern as a negative, the obtained resist pattern was irradiated with ultraviolet rays at an energy amount of 1 J / cm 2 using an ultraviolet irradiation device manufactured by Oak Manufacturing Co., Ltd., and further 160 A laminated substrate for evaluation in which a solder resist having a 2 mm square lattice pattern was formed was obtained in the same manner except that the heat treatment was carried out at 60 ° C. for 60 minutes.
次いで上記で得られた評価用積層体基板にロジン系フラックス(MH−820V、タムラ化研株式会社製、商品名)を塗布した後、260℃のはんだ浴中に30秒間浸漬してはんだ処理を行った。 Next, after applying rosin-based flux (MH-820V, manufactured by Tamura Kaken Co., Ltd., trade name) to the evaluation laminate substrate obtained above, the solder treatment is performed by immersing in a solder bath at 260 ° C. for 30 seconds. went.
このようにしてレジストで覆われていない銅表面にはんだめっきを施された評価基板上のソルダーレジストのクラック発生状況並びに基板からのソルダーレジストの浮きの程度及び剥離の程度を目視により観察し、以下の基準により、ソルダーレジストのはんだ耐熱性を評価した。評価結果を表2に示した。
「○」:ソルダーレジストのクラック発生が認められず、ソルダーレジストの浮き及び剥離も認められないもの。
「×」:上記のいずれかが認められるもの。
In this way, the state of solder resist cracking on the evaluation substrate that was solder-plated on the copper surface that was not covered with the resist was observed visually, and the degree of peeling of the solder resist from the substrate and the degree of peeling were visually observed. The solder heat resistance of the solder resist was evaluated based on the above criteria. The evaluation results are shown in Table 2.
“◯”: No cracking of the solder resist was observed, and neither the solder resist was lifted nor peeled off.
"X": Any of the above is recognized.
[HAST耐性の評価]
12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(MCL E−679、日立化成工業株式会社製、商品名)の銅表面を、エッチングによりライン/スペースが50μm/50μmのくし型電極を形成した。この基板を評価基板とし、基板上に上述のようにレジストの硬化物(永久レジスト膜)を形成し、その後、130℃、85%RH、5V条件下に100時間試験した。その後、マイグレーションの発生の程度を、100倍の金属顕微鏡により観察し、以下の基準でHAST耐性の評価を行った。評価結果を表2に示した。
「○」:永久レジスト膜に大きなマイグレーションが発生しなかったもの。
「×」:大きくマイグレーションが発生したもの
[Evaluation of HAST resistance]
Comb having a line / space of 50 μm / 50 μm by etching the copper surface of a printed wiring board substrate (MCL E-679, manufactured by Hitachi Chemical Co., Ltd., product name) in which a 12 μm thick copper foil is laminated on a glass epoxy substrate. A mold electrode was formed. This substrate was used as an evaluation substrate, and a cured resist (permanent resist film) was formed on the substrate as described above, and then tested under conditions of 130 ° C., 85% RH, 5V for 100 hours. Thereafter, the degree of migration was observed with a 100-fold metal microscope, and HAST resistance was evaluated according to the following criteria. The evaluation results are shown in Table 2.
“◯”: No permanent migration occurred in the permanent resist film.
“×”: A large migration occurred
実施例1〜5の(d)塩素含有量が500ppm以下であるエポキシ樹脂の使用と、2価の金属イオンを含有する水溶液を用いて処理したレジストパターンの形成方法は、特にHAST耐性に優れ、また、解像性、開口形状や金めっき耐性にも優れる。比較例3、4のように、エポキシ樹脂に含まれる塩素量が多い場合、2価の金属イオンを含有する水洗水で水洗することにより(比較例4)、イオン交換水で水洗した比較例3の場合より解像性と開口形状が改善される傾向にある。また、比較例1、2のように、エポキシ樹脂に含まれる塩素量が少ない場合でも、通常のイオン交換水で水洗すると、HAST耐性に劣り、解像性と開口形状も劣るので、実施例のように、低塩素含有のエポキシ樹脂を用い、2価の金属イオンを含有する水溶液で処理する必要がある。 The use of the epoxy resin of Examples 1 to 5 (d) having a chlorine content of 500 ppm or less and the method for forming a resist pattern treated with an aqueous solution containing a divalent metal ion are particularly excellent in HAST resistance. Moreover, it is excellent also in resolution, opening shape, and gold-plating tolerance. When the amount of chlorine contained in the epoxy resin is large as in Comparative Examples 3 and 4, the Comparative Example 3 was washed with ion-exchanged water by rinsing with rinsing water containing divalent metal ions (Comparative Example 4). In this case, the resolution and the aperture shape tend to be improved. Further, as in Comparative Examples 1 and 2, even when the amount of chlorine contained in the epoxy resin is small, washing with normal ion-exchanged water is inferior in HAST resistance and resolution and opening shape. Thus, it is necessary to treat with an aqueous solution containing a divalent metal ion using a low chlorine content epoxy resin.
実施例1〜5の感光性樹脂組成物では、FA−321M(トリシクロデカンジメタノールジメタクリレート)とUX−5002D−M20(トリシクロデカン構造含有ウレタンアクリレート)を併用しており、特性的に優れていることがわかる。 In the photosensitive resin compositions of Examples 1 to 5, FA-321M (tricyclodecane dimethanol dimethacrylate) and UX-5002D-M20 (tricyclodecane structure-containing urethane acrylate) are used in combination, and the characteristics are excellent. You can see that
本発明によれば、感光性ソルダーレジストの解像性、開口形状、Ni/Auめっき耐性、はんだ耐熱性、HAST耐性に優れた、プリント配線板、半導体パッケージ基板、フレキシブル配線板に最適なソルダーレジストを形成できる感光性のドライフィルムを提供することができる。 According to the present invention, a solder resist that is excellent in resolution, opening shape, Ni / Au plating resistance, solder heat resistance, HAST resistance, and optimal for printed wiring boards, semiconductor package substrates, and flexible wiring boards. The photosensitive dry film which can form can be provided.
Claims (4)
前記感光性樹脂組成物が、
(a)エチレン性不飽和基とカルボキシル基を有する樹脂と、(b)エチレン性不飽和基を有する光重合性モノマーと、(c)光重合開始剤と、(d)塩素含有量が500ppm以下であるエポキシ樹脂と、を含有する、感光性樹脂組成物。 A photosensitive layer made of a photosensitive resin composition is provided on a substrate, and a predetermined portion of the photosensitive layer is cured with actinic rays, and then the photosensitive layer region other than the predetermined portion is removed to contain a divalent metal ion. A photosensitive resin composition used in a method for forming a resist pattern, which is processed using an aqueous solution,
The photosensitive resin composition is
(A) a resin having an ethylenically unsaturated group and a carboxyl group; (b) a photopolymerizable monomer having an ethylenically unsaturated group; (c) a photopolymerization initiator; and (d) a chlorine content of 500 ppm or less. A photosensitive resin composition comprising an epoxy resin.
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004085803A (en) * | 2002-08-26 | 2004-03-18 | Nippon Steel Chem Co Ltd | Alkali-developing photosensitive resin composition |
JP2004252485A (en) * | 2004-05-12 | 2004-09-09 | Hitachi Chem Co Ltd | Permanent mask resist and use of photosensitive resin composition |
JP2005202023A (en) * | 2004-01-14 | 2005-07-28 | Japan Epoxy Resin Kk | Alkali development type photosensitive resin composition and cured product thereof |
JP2007071966A (en) * | 2005-09-05 | 2007-03-22 | Hitachi Chem Co Ltd | Method for producing permanent resist and method for producing printed wiring board |
JP2008294406A (en) * | 2007-04-27 | 2008-12-04 | Taiyo Ink Mfg Ltd | Printed wiring board manufacturing method and printed wiring board |
JP2009015158A (en) * | 2007-07-06 | 2009-01-22 | Kaneka Corp | Method for producing printed wiring board |
JP2009265388A (en) * | 2008-04-25 | 2009-11-12 | Hitachi Chem Co Ltd | Photosensitive resin composition, and photosensitive permanent resist and photosensitive film, using the same |
JP2009300873A (en) * | 2008-06-16 | 2009-12-24 | Kaneka Corp | Method for manufacturing new circuit substrate |
JP2010237270A (en) * | 2009-03-30 | 2010-10-21 | Taiyo Ink Mfg Ltd | Photosensitive resin composition, and dry film and printed wiring board using the same |
JP2011059176A (en) * | 2009-09-07 | 2011-03-24 | Hitachi Chem Co Ltd | Photosensitive resin composition, photosensitive film for permanent resist, resist pattern forming method, printed wiring board and method of manufacturing the same, surface protective film, and interlayer dielectric |
JP2012208356A (en) * | 2011-03-30 | 2012-10-25 | Kyocer Slc Technologies Corp | Method for developing photosensitive resin |
-
2012
- 2012-04-04 JP JP2012085521A patent/JP2013217954A/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004085803A (en) * | 2002-08-26 | 2004-03-18 | Nippon Steel Chem Co Ltd | Alkali-developing photosensitive resin composition |
JP2005202023A (en) * | 2004-01-14 | 2005-07-28 | Japan Epoxy Resin Kk | Alkali development type photosensitive resin composition and cured product thereof |
JP2004252485A (en) * | 2004-05-12 | 2004-09-09 | Hitachi Chem Co Ltd | Permanent mask resist and use of photosensitive resin composition |
JP2007071966A (en) * | 2005-09-05 | 2007-03-22 | Hitachi Chem Co Ltd | Method for producing permanent resist and method for producing printed wiring board |
JP2008294406A (en) * | 2007-04-27 | 2008-12-04 | Taiyo Ink Mfg Ltd | Printed wiring board manufacturing method and printed wiring board |
JP2009015158A (en) * | 2007-07-06 | 2009-01-22 | Kaneka Corp | Method for producing printed wiring board |
JP2009265388A (en) * | 2008-04-25 | 2009-11-12 | Hitachi Chem Co Ltd | Photosensitive resin composition, and photosensitive permanent resist and photosensitive film, using the same |
JP2009300873A (en) * | 2008-06-16 | 2009-12-24 | Kaneka Corp | Method for manufacturing new circuit substrate |
JP2010237270A (en) * | 2009-03-30 | 2010-10-21 | Taiyo Ink Mfg Ltd | Photosensitive resin composition, and dry film and printed wiring board using the same |
JP2011059176A (en) * | 2009-09-07 | 2011-03-24 | Hitachi Chem Co Ltd | Photosensitive resin composition, photosensitive film for permanent resist, resist pattern forming method, printed wiring board and method of manufacturing the same, surface protective film, and interlayer dielectric |
JP2012208356A (en) * | 2011-03-30 | 2012-10-25 | Kyocer Slc Technologies Corp | Method for developing photosensitive resin |
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