JP2013101790A - Manufacturing method of a substrate with a transparent conductive oxide film - Google Patents
Manufacturing method of a substrate with a transparent conductive oxide film Download PDFInfo
- Publication number
- JP2013101790A JP2013101790A JP2011244062A JP2011244062A JP2013101790A JP 2013101790 A JP2013101790 A JP 2013101790A JP 2011244062 A JP2011244062 A JP 2011244062A JP 2011244062 A JP2011244062 A JP 2011244062A JP 2013101790 A JP2013101790 A JP 2013101790A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- oxide film
- conductive oxide
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroluminescent Light Sources (AREA)
- Paints Or Removers (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
本発明は、透明導電性酸化物膜付基板の製造方法に関する。 The present invention relates to a method for producing a substrate with a transparent conductive oxide film.
従来、有機EL素子等の様々な素子に、透光性を有する透明電極が用いられている。透明電極は、例えば、インジウムスズ酸化物(ITO)などの透明導電性酸化物により構成できることが知られている。 Conventionally, transparent electrodes having translucency have been used for various elements such as organic EL elements. It is known that the transparent electrode can be composed of a transparent conductive oxide such as indium tin oxide (ITO), for example.
例えば有機EL素子において、陽極を構成しているITO膜の表面に突起が存在すると、突起が存在している部分における陽極と陰極との間の距離が短くなり、リーク電流が発生しやすくなるという問題がある。 For example, in an organic EL element, if there is a protrusion on the surface of the ITO film constituting the anode, the distance between the anode and the cathode in the portion where the protrusion is present becomes short, and a leak current is likely to occur. There's a problem.
このような問題に鑑み、特許文献1では、有機EL素子の陽極の有機膜と接合する面の表面粗さの最大高さ(Rmax)を50Å以下とすることが提案されている。特許文献1には、有機EL素子の陽極の表面の表面粗さの最大高さ(Rmax)を50Å以下とする方法として、スパッタリング法や電子ビーム法等により形成したITO膜の表面を、ポリッシング、ラッピング、テープラッピングなどの手法により研磨する方法が記載されている。 In view of such a problem, Patent Document 1 proposes that the maximum height (Rmax) of the surface roughness of the surface to be bonded to the organic film of the anode of the organic EL element is 50 mm or less. In Patent Document 1, as the method for setting the maximum surface roughness (Rmax) of the surface of the anode of the organic EL element to 50 mm or less, the surface of the ITO film formed by sputtering or electron beam method is polished, A method of polishing by a technique such as lapping or tape wrapping is described.
しかしながら、研磨剤を用いてITO膜の表面を研磨すると、ITO膜の表面が傷つくという問題がある。また、研磨剤を用いてITO膜の表面を研磨して表面粗さの最大高さ(Rmax)を小さくするためには長時間を要するという問題もある。 However, when the surface of the ITO film is polished with an abrasive, there is a problem that the surface of the ITO film is damaged. There is also a problem that it takes a long time to reduce the maximum height (Rmax) of the surface roughness by polishing the surface of the ITO film with an abrasive.
本発明は、透明導電性酸化物膜の表面の表面最大粗さ(Rpv)が小さな透明導電性酸化物膜付基板を好適に製造し得る方法を提供することを主な目的とする。 The main object of the present invention is to provide a method capable of suitably producing a substrate with a transparent conductive oxide film having a small surface maximum roughness (Rpv) on the surface of the transparent conductive oxide film.
本発明に係る透明導電性酸化物膜付基板の製造方法では、基板の上に透明導電性酸化物膜を形成する。研磨剤を含まない酸性溶液またはアルカリ性溶液を透明導電性酸化物膜の表面に供給しながら擦る処理工程を行う。 In the method for producing a substrate with a transparent conductive oxide film according to the present invention, a transparent conductive oxide film is formed on the substrate. A processing step of rubbing while supplying an acidic solution or an alkaline solution containing no abrasive to the surface of the transparent conductive oxide film is performed.
処理工程において、酸性溶液またはアルカリ性溶液を含浸させた樹脂製多孔質体で透明導電性酸化物膜の表面を擦ることが好ましい。 In the treatment step, it is preferable to rub the surface of the transparent conductive oxide film with a resin porous body impregnated with an acidic solution or an alkaline solution.
樹脂製多孔質体は、ポリオレフィンからなることが好ましく、なかでもポリエチレンからなることがより好ましい。 The resin porous body is preferably made of polyolefin, more preferably polyethylene.
樹脂製多孔質体の気孔率は、30体積%〜95体積%であることが好ましい。 The porosity of the resin porous body is preferably 30% by volume to 95% by volume.
処理工程において、酸性溶液またはアルカリ性溶液中に透明導電性酸化物膜を浸漬した状態で、樹脂製多孔質体で透明導電性酸化物膜の表面を擦ることが好ましい。 In the treatment step, it is preferable to rub the surface of the transparent conductive oxide film with a porous resin body in a state where the transparent conductive oxide film is immersed in an acidic solution or an alkaline solution.
酸性溶液として、塩酸水溶液を用いることが好ましく、アルカリ性溶液として水酸化カリウム水溶液を用いることが好ましい。 As the acidic solution, an aqueous hydrochloric acid solution is preferably used, and an aqueous potassium hydroxide solution is preferably used as the alkaline solution.
透明導電性酸化物膜が、スズ及び亜鉛の少なくとも一方を含む酸化物からなることが好ましい。 The transparent conductive oxide film is preferably made of an oxide containing at least one of tin and zinc.
透明導電性酸化物膜を、スパッタリング法、真空蒸着法またはCVD法により形成することが好ましい。 The transparent conductive oxide film is preferably formed by a sputtering method, a vacuum evaporation method, or a CVD method.
本発明によれば、透明導電性酸化物膜の表面の表面最大粗さ(Rpv)が小さな透明導電性酸化物膜付基板を好適に製造し得る方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the method which can manufacture suitably the board | substrate with a transparent conductive oxide film with small surface maximum roughness (Rpv) of the surface of a transparent conductive oxide film can be provided.
以下、本発明を実施した好ましい形態の一例について説明する。但し、下記の実施形態は、単なる例示である。本発明は、下記の実施形態に何ら限定されない。 Hereinafter, an example of the preferable form which implemented this invention is demonstrated. However, the following embodiment is merely an example. The present invention is not limited to the following embodiments.
本実施形態では、有機EL素子等に使用される透明導電性酸化物膜付基板の製造方法について説明する。 This embodiment demonstrates the manufacturing method of the board | substrate with a transparent conductive oxide film used for an organic EL element etc.
まず、基板の上に透明導電性酸化物膜を形成する。基板の種類は特に限定されない。基板としては、例えば、ガラス基板、プラスチック基板等を用いることができる。なお、ガラス基板には、結晶化ガラス基板が含まれるものとする。 First, a transparent conductive oxide film is formed on a substrate. The kind of board | substrate is not specifically limited. As the substrate, for example, a glass substrate, a plastic substrate, or the like can be used. The glass substrate includes a crystallized glass substrate.
透明導電性酸化物膜は、例えば、スズ及び亜鉛の少なくとも一方を含む酸化物により構成することができる。スズ及び亜鉛の少なくとも一方を含む酸化物の具体例としては、例えば、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)、アルミニウム亜鉛酸化物(AZO)等が挙げられる。 The transparent conductive oxide film can be made of an oxide containing at least one of tin and zinc, for example. Specific examples of the oxide containing at least one of tin and zinc include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and the like.
透明導電性酸化物膜の形成方法としては、例えば、スパッタリング法、真空蒸着法、CVD法等が挙げられる。 Examples of the method for forming the transparent conductive oxide film include a sputtering method, a vacuum deposition method, and a CVD method.
透明導電性酸化物膜の厚みは、特に限定されず、例えば、50nm〜200nm程度とすることができる。 The thickness of the transparent conductive oxide film is not particularly limited, and can be, for example, about 50 nm to 200 nm.
透明導電性酸化物膜を、スパッタリング法等により形成した場合、透明導電性酸化物膜の表面に突起が形成される。このため、次に、処理工程を行い、透明導電性酸化物膜の突起を除去する。 When the transparent conductive oxide film is formed by sputtering or the like, protrusions are formed on the surface of the transparent conductive oxide film. Therefore, next, a processing step is performed to remove the protrusions of the transparent conductive oxide film.
具体的には、処理工程において、研磨剤を含まない酸性溶液またはアルカリ性溶液を透明導電性酸化物膜の表面に供給しながら擦る。このようにすることにより、透明導電性酸化物膜の表面を傷つけることなく、突起を効率的に除去することができる。従って、本実施形態の透明導電性酸化物膜付基板の製造方法によれば、透明導電性酸化物膜の表面の表面最大粗さ(Rpv)が小さな透明導電性酸化物膜付基板を好適に製造し得る。 Specifically, in the treatment step, rubbing while supplying an acidic solution or an alkaline solution containing no abrasive to the surface of the transparent conductive oxide film. By doing so, the protrusions can be efficiently removed without damaging the surface of the transparent conductive oxide film. Therefore, according to the method for manufacturing a substrate with a transparent conductive oxide film of this embodiment, a substrate with a transparent conductive oxide film having a small surface maximum roughness (Rpv) on the surface of the transparent conductive oxide film is preferably used. Can be manufactured.
なお、本発明において、表面最大粗さ(Rpv)とは、JISB0601:2001により規定された粗さ曲線における最大山高さ(Rp)と最大谷深さ(Rv)の差である。 In the present invention, the maximum surface roughness (Rpv) is the difference between the maximum peak height (Rp) and the maximum valley depth (Rv) in the roughness curve defined by JISB0601: 2001.
例えば、擦らずに、酸性溶液またはアルカリ性溶液を透明導電性酸化物膜の表面に供給することのみにより突起を除去することも考えられる。この場合は、透明導電性酸化物膜の表面を傷つけない。しかしながら、突起の除去に長時間を要する。それに対して、本実施形態のように研磨剤を含まない酸性溶液またはアルカリ性溶液を透明導電性酸化物膜の表面に供給しながら擦ることにより、透明導電性酸化物膜の表面を傷つけずに短時間の間に突起を除去することができる。 For example, it is conceivable to remove the protrusions only by supplying an acidic solution or an alkaline solution to the surface of the transparent conductive oxide film without rubbing. In this case, the surface of the transparent conductive oxide film is not damaged. However, it takes a long time to remove the protrusions. On the other hand, as in this embodiment, the surface of the transparent conductive oxide film is rubbed without damaging the surface of the transparent conductive oxide film by rubbing while supplying an acidic or alkaline solution containing no abrasive to the surface of the transparent conductive oxide film. The protrusion can be removed during the time.
透明導電性酸化物膜を擦る部材は、特に限定されないが、例えば、樹脂製多孔質体が好ましく用いられる。なかでも、ポリオレフィンからなる樹脂製多孔質体、さらには、ポリエチレンからなる樹脂製多孔質体がより好ましく用いられる。樹脂製多孔質体の気孔率は、30体積%〜95体積%であることが好ましく、60体積%〜80体積%であることがより好ましい。これらの樹脂製多孔質体に酸性溶液またはアルカリ性溶液を含浸させて透明導電性酸化物膜の表面を擦ることにより、透明導電性酸化物膜の表面を傷つけることなく、突起をより効率的に除去することができる。 Although the member which rubs a transparent conductive oxide film is not specifically limited, For example, a resin-made porous body is used preferably. Among these, a resin porous body made of polyolefin, and a resin porous body made of polyethylene are more preferably used. The porosity of the resin porous body is preferably 30% by volume to 95% by volume, and more preferably 60% by volume to 80% by volume. By impregnating these resin porous bodies with an acidic or alkaline solution and rubbing the surface of the transparent conductive oxide film, the protrusions can be removed more efficiently without damaging the surface of the transparent conductive oxide film. can do.
また、処理工程において、酸性溶液またはアルカリ性溶液中に透明導電性酸化物膜を浸漬した状態で樹脂製多孔質体で透明導電性酸化物膜の表面を擦ることがより好ましい。そうすることにより、擦っている最中に透明導電性酸化物膜の表面に新たな酸性溶液またはアルカリ性溶液を効率的に供給することができる。従って、突起の除去効率をさらに高めることができる。 In the treatment step, it is more preferable to rub the surface of the transparent conductive oxide film with a porous resin body in a state where the transparent conductive oxide film is immersed in an acidic solution or an alkaline solution. By doing so, a new acidic solution or alkaline solution can be efficiently supplied to the surface of the transparent conductive oxide film during rubbing. Therefore, the protrusion removal efficiency can be further increased.
酸性溶液の種類は特に限定されない。酸性溶液としては、塩酸水溶液、硝酸水溶液、硫酸水溶液等が好ましく用いられる。なかでも、塩酸水溶液、特に希塩酸水溶液がより好ましく用いられる。 The kind of acidic solution is not particularly limited. As the acidic solution, a hydrochloric acid aqueous solution, a nitric acid aqueous solution, a sulfuric acid aqueous solution or the like is preferably used. Among these, a hydrochloric acid aqueous solution, particularly a dilute hydrochloric acid aqueous solution is more preferably used.
酸性溶液の濃度は、0.5規定〜12規定であることが好ましく、0.5規定〜1規定であることがより好ましい。 The concentration of the acidic solution is preferably 0.5 N to 12 N, and more preferably 0.5 N to 1 N.
アルカリ性溶液の種類は特に限定されない。アルカリ性溶液としては、水酸化ナトリウム水溶液、水酸化カリウム水溶液等が好ましく用いられる。なかでも水酸化カリウム水溶液がより好ましく用いられる。 The kind of alkaline solution is not particularly limited. As the alkaline solution, an aqueous sodium hydroxide solution, an aqueous potassium hydroxide solution or the like is preferably used. Of these, an aqueous potassium hydroxide solution is more preferably used.
アルカリ性溶液の濃度は、0.1規定〜1規定であることが好ましく、0.1規定〜0.5規定であることがより好ましい。 The concentration of the alkaline solution is preferably 0.1 N to 1 N, and more preferably 0.1 N to 0.5 N.
以下、本発明について、具体的な実施例に基づいて、さらに詳細に説明するが、本発明は以下の実施例に何ら限定されるものではなく、その要旨を変更しない範囲において適宜変更して実施することが可能である。 Hereinafter, the present invention will be described in more detail on the basis of specific examples. However, the present invention is not limited to the following examples, and may be appropriately modified and implemented without departing from the scope of the present invention. Is possible.
(実施例1)
日本電気硝子社製無アルカリガラスOA−10からなるガラス基板の上に、スパッタリング法により、厚み150nmのITO膜を形成した。形成されたITO膜の表面の表面最大粗さ(Rpv)を、AFMを用いて測定したところ、10μm角の測定範囲で31nmであった。
Example 1
An ITO film having a thickness of 150 nm was formed on a glass substrate made of non-alkali glass OA-10 manufactured by Nippon Electric Glass Co., Ltd. by a sputtering method. When the surface maximum roughness (Rpv) of the surface of the formed ITO film was measured using AFM, it was 31 nm in a measurement range of 10 μm square.
次に、外形が40mmの塩化ビニル製のパイプに固定した、気孔率が60体積%であるポリエチレン製の多孔質体を用いて、1規定の希塩酸水溶液中に浸漬したITO膜を、一の方向に沿って70回擦った後に、一の方向に対して垂直な他の方向に沿って70回擦った。この処理に要した時間は、大凡240秒であった。その後、ITO膜の表面の表面最大粗さ(Rpv)を、AFMを用いて再度測定したところ、11nmであった。 Next, using a polyethylene porous body having a porosity of 60% by volume fixed to a vinyl chloride pipe having an outer shape of 40 mm, an ITO film immersed in a 1N dilute hydrochloric acid aqueous solution is applied in one direction. And then 70 times along another direction perpendicular to one direction. The time required for this process was approximately 240 seconds. Then, when the surface maximum roughness (Rpv) of the surface of the ITO film was measured again using AFM, it was 11 nm.
(比較例1)
実施例1と同様にして作製したITO膜を1規定の希塩酸水溶液中に360秒間浸漬し、擦らなかった。その後、ITO膜の表面の表面最大粗さ(Rpv)を、AFMを用いて再度測定したところ、35nmであった。
(Comparative Example 1)
An ITO film produced in the same manner as in Example 1 was immersed in a 1N dilute hydrochloric acid solution for 360 seconds and was not rubbed. Then, when the surface maximum roughness (Rpv) of the surface of the ITO film was measured again using AFM, it was 35 nm.
(実施例2)
1規定の希塩酸水溶液に変えて、0.5規定のKOH水溶液を用いたこと以外は、実施例1と同様にしてITO膜の表面を擦った。その後、ITO膜の表面の表面最大粗さ(Rpv)を、AFMを用いて再度測定したところ、22nmであった。
(Example 2)
The surface of the ITO film was rubbed in the same manner as in Example 1 except that a 0.5 N KOH aqueous solution was used instead of the 1 N dilute hydrochloric acid aqueous solution. Then, when the surface maximum roughness (Rpv) of the surface of the ITO film was measured again using AFM, it was 22 nm.
以上の結果から、ITO膜の表面に酸性溶液またはアルカリ性溶液を供給しながら擦ることにより、効率的に突起を除去できることが分かる。 From the above results, it can be seen that protrusions can be efficiently removed by rubbing while supplying an acidic solution or an alkaline solution to the surface of the ITO film.
(実施例3)
ポリエチレン製の多孔質体に替えて、気孔率が90体積%であるポリビニルアルコール製の多孔質体を用いたこと以外は実施例1と同様にしてITO膜の表面を擦った。その後、ITO膜の表面の表面最大粗さ(Rpv)を、AFMを用いて再度測定したところ、17nmであった。
(Example 3)
The surface of the ITO film was rubbed in the same manner as in Example 1 except that a porous body made of polyvinyl alcohol having a porosity of 90% by volume was used instead of the porous body made of polyethylene. Then, when the surface maximum roughness (Rpv) of the surface of the ITO film was measured again using AFM, it was 17 nm.
(実施例4)
ポリエチレン製の多孔質体に替えて、気孔率が83体積%であるポリウレタン製の多孔質体を用いたこと以外は実施例1と同様にしてITO膜の表面を擦った。その後、ITO膜の表面の表面最大粗さ(Rpv)を、AFMを用いて再度測定したところ、15nmであった。
Example 4
The surface of the ITO film was rubbed in the same manner as in Example 1 except that a polyurethane porous body having a porosity of 83% by volume was used instead of the polyethylene porous body. Then, when the surface maximum roughness (Rpv) of the surface of the ITO film was measured again using AFM, it was 15 nm.
実施例1〜4の結果から、ポリエチレン製の多孔質体を用いることにより、突起をより効率的に除去できることが分かる。 From the results of Examples 1 to 4, it can be seen that the protrusions can be more efficiently removed by using the polyethylene porous body.
Claims (10)
研磨剤を含まない酸性溶液またはアルカリ性溶液を前記透明導電性酸化物膜の表面に供給しながら擦る処理工程と、
を備える、透明導電性酸化物膜付基板の製造方法。 Forming a transparent conductive oxide film on the substrate;
A treatment step of rubbing while supplying an acidic solution or an alkaline solution containing no abrasive to the surface of the transparent conductive oxide film;
A method for producing a substrate with a transparent conductive oxide film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011244062A JP2013101790A (en) | 2011-11-08 | 2011-11-08 | Manufacturing method of a substrate with a transparent conductive oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011244062A JP2013101790A (en) | 2011-11-08 | 2011-11-08 | Manufacturing method of a substrate with a transparent conductive oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013101790A true JP2013101790A (en) | 2013-05-23 |
Family
ID=48622242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011244062A Pending JP2013101790A (en) | 2011-11-08 | 2011-11-08 | Manufacturing method of a substrate with a transparent conductive oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2013101790A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101922911B1 (en) | 2016-10-27 | 2018-11-28 | 한국에너지기술연구원 | Double-layer film of aluminum-doped zinc oxide, and method for preparing the same |
CN111057403A (en) * | 2019-11-28 | 2020-04-24 | 浙江大学 | A kind of inorganic anti-corrosion coating with conductive electrostatic and wear resistance and preparation method thereof |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065577A (en) * | 1992-06-16 | 1994-01-14 | Nec Corp | Substrate cleaning device |
JPH09120890A (en) * | 1995-10-27 | 1997-05-06 | Mitsubishi Chem Corp | Organic electroluminescent device and method of manufacturing the same |
JPH09190991A (en) * | 1996-01-11 | 1997-07-22 | Miyagi Oki Denki Kk | Brush scrub cleaning method and equipment |
JPH1041260A (en) * | 1996-07-24 | 1998-02-13 | Miyagi Oki Denki Kk | Wafer scrubber device |
JP2001267065A (en) * | 2000-03-22 | 2001-09-28 | Casio Comput Co Ltd | EL device |
JP2002079190A (en) * | 2000-09-06 | 2002-03-19 | Dainippon Screen Mfg Co Ltd | Substrate cleaning member, and device and method for cleaning substrate using the same |
JP2004071558A (en) * | 2002-07-25 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | Method of manufacturing light-emitting device |
JP2005144288A (en) * | 2003-11-13 | 2005-06-09 | Fushimi Pharm Co Ltd | Swab |
JP2006051057A (en) * | 2004-08-09 | 2006-02-23 | Pentax Corp | Endoscopy cleaning brush |
JP2006253053A (en) * | 2005-03-14 | 2006-09-21 | Seiko Epson Corp | Wiring board cleaning method, light emitting device manufacturing method |
JP2009032699A (en) * | 2001-01-18 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Light emitting device |
JP2009295461A (en) * | 2008-06-06 | 2009-12-17 | Seiko Epson Corp | Manufacturing method of indium tin oxide layer, and manufacturing method of electro-optical device |
-
2011
- 2011-11-08 JP JP2011244062A patent/JP2013101790A/en active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065577A (en) * | 1992-06-16 | 1994-01-14 | Nec Corp | Substrate cleaning device |
JPH09120890A (en) * | 1995-10-27 | 1997-05-06 | Mitsubishi Chem Corp | Organic electroluminescent device and method of manufacturing the same |
JPH09190991A (en) * | 1996-01-11 | 1997-07-22 | Miyagi Oki Denki Kk | Brush scrub cleaning method and equipment |
JPH1041260A (en) * | 1996-07-24 | 1998-02-13 | Miyagi Oki Denki Kk | Wafer scrubber device |
JP2001267065A (en) * | 2000-03-22 | 2001-09-28 | Casio Comput Co Ltd | EL device |
JP2002079190A (en) * | 2000-09-06 | 2002-03-19 | Dainippon Screen Mfg Co Ltd | Substrate cleaning member, and device and method for cleaning substrate using the same |
JP2009032699A (en) * | 2001-01-18 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Light emitting device |
JP2004071558A (en) * | 2002-07-25 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | Method of manufacturing light-emitting device |
JP2005144288A (en) * | 2003-11-13 | 2005-06-09 | Fushimi Pharm Co Ltd | Swab |
JP2006051057A (en) * | 2004-08-09 | 2006-02-23 | Pentax Corp | Endoscopy cleaning brush |
JP2006253053A (en) * | 2005-03-14 | 2006-09-21 | Seiko Epson Corp | Wiring board cleaning method, light emitting device manufacturing method |
JP2009295461A (en) * | 2008-06-06 | 2009-12-17 | Seiko Epson Corp | Manufacturing method of indium tin oxide layer, and manufacturing method of electro-optical device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101922911B1 (en) | 2016-10-27 | 2018-11-28 | 한국에너지기술연구원 | Double-layer film of aluminum-doped zinc oxide, and method for preparing the same |
CN111057403A (en) * | 2019-11-28 | 2020-04-24 | 浙江大学 | A kind of inorganic anti-corrosion coating with conductive electrostatic and wear resistance and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5708648B2 (en) | Support board | |
JP6647753B2 (en) | Polarizing plate and manufacturing method thereof | |
CN105814969B (en) | Electrolytic copper foil and its manufacturing method | |
CN101308882A (en) | Preparation method of transparent conductive oxide suede | |
TW201500306A (en) | Methods for processing a thin flexible glass substrate with a glass carrier | |
JP2013101790A (en) | Manufacturing method of a substrate with a transparent conductive oxide film | |
CN104309054B (en) | Preparation method of metal-resin composite, and metal-resin composite | |
CN103887237A (en) | Array substrate, preparation method thereof and organic electroluminescence display device | |
JP6259396B2 (en) | Electrode foil and organic light emitting device | |
JP2010110897A (en) | Method of manufacturing flattened object, flattened object, and method of flattening treated surface | |
JP2007188728A (en) | Mask playback method | |
JP5226040B2 (en) | Method for producing optical functional film | |
CN107533182A (en) | The manufacture method of polarizer | |
EP2879466B1 (en) | Metal foil and electronic device | |
KR102254561B1 (en) | Etchant composition for silver nanowires | |
CN107555804B (en) | Touch screen glass and preparation method thereof | |
CN104012172A (en) | Glass substrate for organic EL device and organic EL device using the same | |
JP2013016405A (en) | Organic electronic device and manufacturing method thereof | |
JP5458272B2 (en) | Antifouling faceplate for display device transparent in visible light region, method for producing the same, display device and article using them | |
TW202340531A (en) | Metal component, metal-resin composite article, and method for manufacturing metal component | |
JP2012031323A (en) | Method for producing highly water-and-oil repellant resin member, highly water-and-oil repellant resin member, and highly water-and-oil repellant member using the same | |
KR20150113679A (en) | A window substrate and method of champering the same | |
JP7553094B2 (en) | Film removal method, method for forming transparent conductive film with a specified pattern, and patterning device | |
JP2015227267A (en) | Hydrophilic member, production method thereof and maintenance method of hydrophilic member | |
JP6152083B2 (en) | Method for producing polarizer having non-polarizing part |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140609 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150303 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150707 |