JP2012239256A - Electric power conversion apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic power conversion apparatus which effectively cools semiconductor modules.SOLUTION: A first heat radiation member 40 is formed into a hollow cylindrical shape and has a fluid passage 41 in which a fluid circulates. Semiconductor modules 10, 20, 30 include switching elements switching the electric conduction to a rotary electric machine and plate like sealing bodies 17, 27, 37 covering the switching elements. The semiconductor modules 10, 20, 30 are provided so that one side surfaces of the sealing bodies 17, 27, 37 contact with an inner wall of the first heat radiation member 40.

Description

  The present invention relates to a power converter, and more particularly to a power converter that converts power from a power source into power for driving a rotating electrical machine.

  2. Description of the Related Art Conventionally, a technique for driving a rotating electrical machine using a power converter that converts a direct current from a power source into a sine wave current is known. The above-described power conversion device converts a direct current into a sine wave current by performing on / off control of a switching element of the semiconductor module. During operation of the power converter, that is, when the power converter drives the rotating electrical machine, the semiconductor module generates heat. In particular, when the power converter is used to drive a high-output rotating electrical machine for driving a vehicle, for example, the amount of heat generated by the semiconductor module increases.

  In the power conversion device described in Patent Document 1, a plurality of semiconductor modules are arranged in an annular shape so that one surface abuts against an outer wall of a heat sink formed in a cylindrical shape as a heat radiating member. As a result, the heat generated by the semiconductor module is transmitted to the heat sink via one surface to dissipate heat. That is, the semiconductor module that generates heat during operation is cooled by the heat sink. However, in the power conversion device of Patent Document 1, since the semiconductor module is disposed outside the heat sink, there is a risk of directly receiving heat from the outside of the heat sink. In a state where the semiconductor module receives heat from the outside, the semiconductor module may not be sufficiently cooled by the heat sink.

Therefore, in the power conversion devices described in Patent Documents 2 and 3, a plurality of semiconductor modules are arranged in an annular shape so that one surface is in contact with the inner wall of the cylindrical heat sink. Thereby, the semiconductor module can avoid receiving the heat from the outside of the heat sink directly.
However, in each of the power conversion devices disclosed in Patent Documents 1 to 3, the semiconductor module has a configuration in which only one surface is in contact with the heat sink. Therefore, the cooling effect of the semiconductor module by the heat sink is small, and if the semiconductor module generates a large amount of heat, the semiconductor module may not be sufficiently cooled.

JP-A-8-126346 JP 2000-349233 A Japanese Patent Laid-Open No. 10-234158

  This invention is made | formed in view of the above-mentioned problem, and is providing the power converter device with the high effect of cooling a semiconductor module.

  The invention described in claim 1 is a power conversion device that converts electric power from a power source into electric power for driving a rotating electrical machine, and includes a first heat radiating member and a semiconductor module. The first heat radiating member is formed in a hollow cylindrical shape and has a first fluid passage through which a fluid can flow. The semiconductor module has a switching element that switches energization to the rotating electrical machine, and a plate-shaped sealing body that covers the switching element. The semiconductor module is provided so that one surface of the sealing body contacts the inner wall of the first heat radiating member. Thereby, the heat generated by the semiconductor module can be radiated via the first heat radiating member. That is, the semiconductor module is cooled by the first heat radiating member.

  In the present invention, since the first fluid passage is formed in the first heat radiating member, the first heat radiating member can be air-cooled when, for example, air is circulated as fluid in the first fluid passage. In addition, for example, when water is circulated as a fluid in the first fluid passage, the first heat radiating member can be water-cooled. Thus, the cooling effect of the semiconductor module by a 1st heat radiating member can be improved more by air-cooling or water-cooling a 1st heat radiating member.

  In the present invention, as described above, the semiconductor module is arranged inside the hollow cylindrical first heat radiating member. Therefore, it is possible to prevent the semiconductor module from directly receiving heat from the outside of the first heat dissipation member by blocking heat from the outside of the first heat dissipation member by the first heat dissipation member. Thereby, the semiconductor module can be effectively cooled by the first heat radiating member.

  The invention according to claim 2 further includes a cylindrical second heat radiating member provided inside the first heat radiating member so that the outer wall contacts the other surface of the sealing body. Thereby, the heat generated by the semiconductor module can be radiated from both sides of the sealing body via the first heat radiating member and the second heat radiating member. Therefore, the cooling effect of the semiconductor module can be further enhanced.

  In a third aspect of the invention, the second heat radiating member has a second fluid passage through which fluid can flow inside the outer wall. In the present invention, since the second fluid passage is formed in the second heat radiation member, for example, when air is circulated as a fluid through the second fluid passage, the second heat radiation member can be air-cooled. In addition, for example, when water is circulated as a fluid in the second fluid passage, the second heat radiating member can be water-cooled. Thus, the cooling effect of the semiconductor module by a 2nd heat radiating member can be improved more by air-cooling or water-cooling a 2nd heat radiating member.

  In the invention described in claim 4, the second heat radiating member is formed in a hollow cylindrical shape. The present invention further includes an urging member provided inside the second heat radiating member so as to abut against the inner wall of the second heat radiating member and press the outer wall of the second heat radiating member against the other surface of the sealing body. As a result, the second heat radiating member and the sealing body are in close contact with each other, so that the cooling effect of the semiconductor module by the second heat radiating member can be further enhanced. Further, in this configuration, one surface of the sealing body is pressed against the inner wall of the first heat radiating member by the urging member. Thereby, since the first heat radiating member and the sealing body are in close contact with each other, the cooling effect of the semiconductor module by the first heat radiating member can be further enhanced.

  In the invention according to claim 5, a plurality of semiconductor modules are provided. The second heat radiating member is divided into a plurality of parts corresponding to the plurality of semiconductor modules. In this configuration, the divided second heat radiation member is pressed against each semiconductor module independently by the urging member. Thereby, since the 2nd heat radiating member and the sealing body will be in the state contacted uniformly and closely, the cooling effect of the semiconductor module by the 2nd heat radiating member can further be heightened. In addition, since the first heat radiating member and the sealing body are in uniform and close contact with each other, the cooling effect of the semiconductor module by the first heat radiating member can be further enhanced.

  The invention described in claim 6 is further provided with a capacitor that is provided so as to contact the outer wall of the first heat radiating member and smoothes the electric power from the power source. In this configuration, even if the capacitor generates heat during operation of the power conversion device, the generated heat can be radiated via the first heat radiating member. As described above, in the present invention, by providing the capacitor as another electronic component so as to contact the outer wall of the first heat radiating member, the capacitor can be effectively cooled while the space is effectively used.

  The invention according to claim 7 further includes a third heat radiating member provided so as to contact one or both of both end portions in the axial direction of the second heat radiating member. Thereby, the heat of the 2nd heat radiating member can be radiated via the 3rd heat radiating member. That is, the semiconductor module can be indirectly cooled by the third heat radiating member. Therefore, the cooling effect of the semiconductor module in the power conversion device can be further enhanced.

  In the invention described in claim 8, the third heat radiating member has a third fluid passage through which a fluid can flow. Thereby, the cooling effect of the semiconductor module in a power converter device can be improved further.

  In the invention according to claim 9, a plurality of semiconductor modules are provided. The plurality of sealing bodies are formed in a shape in which the side surfaces between the one surface and the other surface can face each other or contact each other in a state where one surface is in contact with the inner wall of the first heat radiating member. . In this configuration, the plurality of semiconductor modules can be annularly arranged in the circumferential direction with almost no gap in a state where the side surfaces of the sealing body are opposed to or in contact with each other. Thereby, the contact area with the 1st heat radiating member of a sealing body can be enlarged. As a result, the cooling effect of the semiconductor module by the first heat radiating member can be further enhanced.

(A) is sectional drawing which shows the power converter device by 1st Embodiment of this invention, (B) is BB sectional drawing of (A). The figure which shows the circuit structure of the power converter device by 1st Embodiment of this invention. (A) is sectional drawing which shows the power converter device by 2nd Embodiment of this invention, (B) is a perspective view which shows the biasing member of the power converter device by 2nd Embodiment of this invention. Sectional drawing which shows the power converter device by 3rd Embodiment of this invention. Sectional drawing which shows the power converter device by 4th Embodiment of this invention. Sectional drawing which shows the power converter device by 5th Embodiment of this invention. Sectional drawing which shows the power converter device by 6th Embodiment of this invention.

Hereinafter, a plurality of embodiments of the present invention will be described with reference to the drawings. Note that, in a plurality of embodiments, the same components are denoted by the same reference numerals, and description thereof is omitted.
(First embodiment)
1 and 2 show a power conversion device according to a first embodiment of the present invention and a circuit configuration thereof.

  The power conversion device 1 of the present embodiment is used to drive a rotating electrical machine 2 mounted on a hybrid vehicle (not shown), for example. The rotating electrical machine 2 drives driving wheels of the vehicle or generates power by regenerative braking control.

  A rotating electrical machine 2 to be driven by the power conversion device 1 is a three-phase brushless motor, and is provided at a stator around which a winding is wound, a rotor provided inside the stator, and a center of the rotor. It has a rotor shaft and the like. The plurality of windings wound around the stator correspond to three phases of U phase, V phase and W phase, respectively. Hereinafter, the winding corresponding to the U phase is referred to as a U phase winding, the winding corresponding to the V phase is referred to as a V phase winding, and the winding corresponding to the W phase is referred to as a W phase winding.

  A direct current is supplied to the power converter 1 from a battery 4 as a power source. The power converter 1 converts a direct current from the battery 4 into a sine wave current having a different phase for each phase, and converts the sine wave current into each winding (U phase winding, V phase winding, W phase) of the rotating electrical machine 2. To the winding). When a sine wave current is supplied to each winding of the rotating electrical machine 2, the rotor rotates, and the force generated by this rotation is output from the rotor shaft.

As shown in FIGS. 1 and 2, the power conversion device 1 includes a plurality of semiconductor modules (semiconductor modules 10, 20, 30), a first heat radiating member 40, a second heat radiating member 50, a capacitor 60, a third heat radiating member 70, and A control unit 80 and the like are provided.
As shown in FIG. 2, the semiconductor module 10 includes a first switching element 11 and a second switching element 12. The semiconductor module 20 has a first switching element 21 and a second switching element 22. The semiconductor module 30 includes a first switching element 31 and a second switching element 32. The first switching elements 11, 21, 31 and the second switching elements 12, 22, 32 correspond to “switching elements” in the claims.

  In the present embodiment, the first switching elements 11, 21, 31 and the second switching elements 12, 22, 32 are, for example, insulated gate bipolar transistors (IGBT) which are a kind of power transistors. The collectors of the first switching elements 11, 21 and 31 are connected to the positive electrode of the battery 4. The emitters of the first switching elements 11, 21, and 31 are connected to the collectors of the second switching elements 12, 22, and 32, respectively. The emitters of the second switching elements 12, 22 and 32 are connected to the negative electrode of the battery 4. Note that the gates of the first switching elements 11, 21, 31 and the second switching elements 12, 22, 32 are connected to a microcomputer 82 described later.

  Connection points between the first switching elements 11, 21, and 31 and the second switching elements 12, 22, and 32 are respectively connected to the windings of the rotating electrical machine 2. That is, the set of the first switching element 11 and the second switching element 12, the set of the first switching element 21 and the second switching element 22, and the set of the first switching element 31 and the second switching element 32 are the rotating electrical machine. The switching element pair is configured corresponding to each of the two phases. In the present embodiment, the first switching element 11 and the second switching element 12 correspond to the U phase, the first switching element 21 and the second switching element 22 correspond to the V phase, and the first switching element 31 and the second switching element 12 correspond to the U phase. The two switching elements 32 correspond to the W phase.

  As shown in FIG. 1, in addition to the first switching element 11 and the second switching element 12, the semiconductor module 10 includes a first terminal 13, a second terminal 14, a phase terminal 15, a control terminal 16, a sealing body 17, and the like. have. The first terminal 13, the second terminal 14, and the phase terminal 15 are formed in a rectangular plate shape that is long in the longitudinal direction using, for example, a metal such as copper. A plurality of the control terminals 16 are formed in a thin rod shape with a metal such as copper, for example. One end of the first terminal 13 is connected to the collector of the first switching element 11. One end of the second terminal 14 is connected to the emitter of the second switching element 12. One end of the phase terminal 15 is connected to a connection point between the first switching element 11 (emitter) and the second switching element 12 (collector). One end of each control terminal 16 is connected to the gates of the first switching element 11 and the second switching element 12.

  The sealing body 17 is formed in a rectangular plate shape using a resin such as epoxy. The sealing body 17 covers one end of the first switching element 11 and the second switching element 12, and the first terminal 13, the second terminal 14, the phase terminal 15, and each control terminal 16. Here, the other end sides of the first terminal 13, the second terminal 14, and the phase terminal 15 protrude from the predetermined side of the sealing body 17 in the surface direction. The other end side of each control terminal 16 protrudes from a predetermined side of the sealing body 17 in a direction opposite to the protruding direction of the first terminal 13, the second terminal 14, and the phase terminal 15.

The semiconductor module 20 includes a first terminal 23, a second terminal 24, a phase terminal 25, a control terminal 26, a sealing body 27, and the like in addition to the first switching element 21 and the second switching element 22. It is configured in the same way. That is, the first switching element 21 and the second switching element 22 are covered with a rectangular plate-shaped sealing body 27.
The semiconductor module 30 includes a first terminal 33, a second terminal 34, a phase terminal 35, a control terminal 36, a sealing body 37, and the like in addition to the first switching element 31 and the second switching element 32. It is configured in the same way. That is, the first switching element 31 and the second switching element 32 are covered with a rectangular plate-shaped sealing body 37.
As described above, the semiconductor modules 10, 20, and 30 are semiconductor modules having a so-called 2-in-1 configuration (a configuration in which a pair of the first switching element and the second switching element is packaged into one for each phase).

  As shown in FIGS. 1 (A) and 1 (B), the first heat radiating member 40 is formed in a hollow triangular tube shape from a metal such as aluminum. Moreover, the 1st heat radiating member 40 has the fluid channel | path 41 which can distribute | circulate the fluid between an inner wall and an outer wall. In the present embodiment, water is circulated through the fluid passage 41 as a fluid. Thereby, the 1st heat radiating member 40 can be water-cooled. Here, the fluid passage 41 corresponds to a “first fluid passage” in claims.

  In the present embodiment, the semiconductor modules 10, 20, and 30 are configured so that one surface of the sealing bodies 17, 27, and 37 is in contact with each of the three inner walls of the first heat radiating member 40. It is housed inside. Here, the semiconductor modules 10, 20, 30 have the first terminals 13, 23, 33, the second terminals 14, 24, 34, the phase terminals 15, 25, 35, and the control terminals 16, 26, 36, respectively. It arrange | positions so that it may become substantially parallel to the axis | shaft of the thermal radiation member 40. FIG.

  As shown in FIGS. 1A and 1B, the second heat radiating member 50 is formed in a solid triangular tube shape from a metal such as aluminum. The second heat radiating member 50 is provided inside the first heat radiating member 40 so that the three outer walls abut against the other surfaces of the sealing bodies 17, 27, and 37 of the semiconductor modules 10, 20, and 30, respectively. . Here, the second heat radiating member 50 is formed so that the height is substantially the same as the height of the first heat radiating member 40. The second heat radiating member 50 has an outer wall that can be in close contact with the other surface of the sealing bodies 17, 27, 37 of the semiconductor modules 10, 20, 30, and one of the sealing bodies 17, 27, 37. The surface of the first heat radiating member 40 is formed in such a size that it can come into close contact with the inner wall of the first heat radiating member 40.

  The capacitor 60 is an electrolytic capacitor, and has a main body 61, a positive terminal 62, and a negative terminal 63 (see FIGS. 1A and 1B). The main body 61 is formed in a substantially rectangular parallelepiped shape. The positive terminal 62 and the negative terminal 63 are formed in a rod shape from a metal such as copper, for example, and one end is provided so as to protrude from a predetermined surface of the main body 61. The capacitor 60 is provided such that a predetermined surface of the outer wall of the main body 61 is in contact with the outer wall of the first heat radiating member 40. In the present embodiment, the capacitor 60 is provided on the opposite side of the semiconductor module 20 with the first heat radiating member 40 interposed therebetween. Here, the capacitor 60 has a positive terminal 62 and a negative terminal 63 of the first terminals 13, 23, 33, the second terminals 14, 24, 34 and the phase terminals 15, 25, 35 of the semiconductor modules 10, 20, 30. Are arranged so as to be substantially parallel to each other.

  The third heat radiating member 70 is made of a metal such as aluminum. The third heat radiating member 70 includes a plate member 71 and a plate member 72. The plate member 71 and the plate member 72 are formed in a triangular plate shape in accordance with the outer shape of the end surface of the first heat radiating member 40 in the axial direction. The plate member 71 is provided so as to block one end portion in the axial direction of the first heat radiating member 40 and closely contact one end surface in the axial direction of the second heat radiating member 50. The plate member 72 is provided so as to block the other end portion in the axial direction of the first heat radiating member 40 and to be in close contact with the other end surface in the axial direction of the second heat radiating member 50.

  The plate member 71 has a fluid passage 711 through which fluid can flow between one surface and the other surface. The plate member 72 has a fluid passage 721 through which fluid can flow between one surface and the other surface. In this embodiment, water is circulated through the fluid passage 711 and the fluid passage 721 as a fluid. Thereby, the 3rd heat radiating member 70 can be water-cooled. Here, the fluid passage 711 and the fluid passage 721 correspond to a “third fluid passage” in the claims.

  As shown in FIG. 1A, the third heat radiating member 70 is formed with a plurality of holes 712 that penetrate the plate member 71 in the plate thickness direction. The first terminals 13, 23, 33, the second terminals 14, 24, 34 and the phase terminals 15, 25, 35 of the semiconductor modules 10, 20, 30 pass through the hole 712, and the other end is a plate member 71 is provided so as to protrude to the opposite side of the first heat radiation member 40. Here, the other ends of the first terminals 13, 23, 33 are connected to the positive electrode of the battery 4. Thereby, the collectors of the first switching elements 11, 21, 31 are connected to the positive electrode of the battery 4. The other ends of the second terminals 14, 24 and 34 are connected to the negative electrode of the battery 4. Thereby, the emitters of the second switching elements 12, 22 and 32 are connected to the negative electrode of the battery 4. The other ends of the phase terminals 15, 25, and 35 are connected to the U-phase winding, V-phase winding, and W-phase winding of the rotating electrical machine 2, respectively. Thereby, the connection points of the first switching elements 11, 21, 31 (emitter) and the second switching elements 12, 22, 32 (collector) are respectively the U-phase winding, V-phase winding of the rotating electrical machine 2, Connected to W-phase winding.

The third heat radiating member 70 has a plurality of holes 722 that penetrate the plate member 72 in the plate thickness direction. Each control terminal 16, 26, 36 of the semiconductor module 10, 20, 30 is provided so that the other end protrudes to the opposite side of the plate member 72 from the first heat radiating member 40 by passing through the hole 722. Yes.
The capacitor 60 has a positive terminal 62 connected to the positive electrode of the battery 4 and a negative terminal 63 connected to the negative electrode of the battery 4.

  The control unit 80 is provided on the opposite side of the plate member 72 of the third heat radiating member 70 from the first heat radiating member 40. The control unit 80 includes a substrate 81, a microcomputer 82, and the like. The substrate 81 is provided so that one surface abuts on the plate member 72. The microcomputer 82 is provided on the other surface of the substrate 81. The microcomputer 82 is a small computer having an integrated circuit or the like, and is connected to various components and detection means of the power conversion device 1. A program is stored in the storage unit of the microcomputer 82, and the microcomputer 82 executes various processes according to the program and controls the operation of the connection destination component and the like.

  The microcomputer 82 is connected to the gates of the first switching elements 11, 21, 31 and the second switching elements 12, 22, 32 via the control terminals 16, 26, 36 of the semiconductor modules 10, 20, 30. doing. The microcomputer 82 transmits an on / off control signal to the first switching elements 11, 21, and 31 and the second switching elements 12, 22, and 32 via the control terminals 16, 26, and 36. Can be switched on and off. The microcomputer 82 converts the DC current from the battery 4 into a sine wave current having a different phase for each phase by switching on and off each switching element, and each phase winding (U-phase winding, V-phase winding, (W-phase winding). Thereby, the rotary electric machine 2 rotates. The microcomputer 82 adjusts the torque and the rotational speed of the rotating electrical machine 2 by PWM control. Thus, the microcomputer 82 controls the rotation of the rotating electrical machine 2 by switching on and off of each switching element.

  As described above, the power conversion device 1 functions as an inverter. In the present embodiment, the capacitor 60 smoothes the power supplied from the battery 4 to the rotating electrical machine 2 when the power conversion device 1 is operated. When the power conversion device 1 is operated, the first switching elements 11, 21, 31 and the second switching elements 12, 22, 32 generate heat, so that the semiconductor modules 10, 20, 30 generate heat. Further, the capacitor 60 also generates heat when the power conversion device 1 is operated.

  In the present embodiment, the semiconductor modules 10, 20, 30 are provided so that one surface of the sealing bodies 17, 27, 37 abuts on the inner wall of the first heat radiating member 40. The capacitor 60 is provided such that a predetermined surface of the outer wall of the main body 61 is in contact with the outer wall of the first heat radiating member 40. Thereby, the heat generated by the semiconductor modules 10, 20, 30 and the capacitor 60 can be radiated via the first heat radiating member 40. That is, the semiconductor modules 10, 20, 30 and the capacitor 60 are cooled by the first heat radiating member 40. In the present embodiment, since the fluid passage 41 is formed in the first heat radiating member 40, the first heat radiating member 40 can be cooled with water by allowing water to flow through the fluid passage 41. Thus, by cooling the first heat radiating member 40 with water, the cooling effect of the semiconductor modules 10, 20, 30 and the capacitor 60 by the first heat radiating member 40 can be further enhanced.

  In the present embodiment, the semiconductor modules 10, 20, and 30 are disposed inside the hollow tube (triangular tube) first heat radiation member 40. Therefore, it is possible to prevent the semiconductor modules 10, 20, and 30 from directly receiving the heat from the outside of the first heat radiating member 40 by blocking the heat from the outside of the first heat radiating member 40 by the first heat radiating member. . Thereby, the semiconductor modules 10, 20, 30 can be effectively cooled by the first heat radiating member 40.

  Further, in the present embodiment, the second of the solid cylindrical shape (solid triangular cylindrical shape) provided inside the first heat radiating member 40 so that the outer wall is in contact with the other surface of the sealing bodies 17, 27, and 37. A heat radiating member 50 is further provided. Thereby, the heat generated by the semiconductor modules 10, 20, 30 can be radiated from both surfaces of the sealing bodies 17, 27, 37 via the first heat radiating member 40 and the second heat radiating member 50. Therefore, the cooling effect of the semiconductor modules 10, 20, 30 can be further enhanced.

  Moreover, in this embodiment, the capacitor | condenser 60 provided so that it may contact | abut on the outer wall of the 1st heat radiating member 40 is provided. In this configuration, even if the capacitor 60 generates heat during operation of the power conversion device 1, the generated heat can be radiated via the first heat radiating member 40. As described above, in this embodiment, by providing the capacitor 60 as another electronic component so as to abut against the outer wall of the first heat radiating member 40, the capacitor 60 can be effectively cooled while the space is effectively used. Can do.

In addition, the present embodiment further includes a third heat radiating member 70 (a plate member 71 and a plate member 72) provided so as to come into contact with both end portions of the second heat radiating member 50 in the axial direction. Thereby, the heat of the second heat radiating member 50 can be radiated via the third heat radiating member 70. That is, the semiconductor modules 10, 20, and 30 can be indirectly cooled by the third heat radiating member 70. Therefore, the cooling effect of the semiconductor modules 10, 20, and 30 in the power conversion device 1 can be further enhanced.
In the present embodiment, the plate member 71 and the plate member 72 constituting the third heat radiating member 70 have a fluid passage 711 and a fluid passage 721 through which fluid can flow. Thereby, the cooling effect of the semiconductor modules 10, 20, 30 in the power conversion device 1 can be further enhanced.

(Second Embodiment)
A power converter according to the second embodiment of the present invention is shown in FIG. In the second embodiment, the shape and the like of the second heat radiating member are different from those in the first embodiment.

  In the second embodiment, the second heat radiating member 50 is formed in a hollow triangular tube shape. In the present embodiment, an urging member 90 is provided inside the second heat radiating member 50. The urging member 90 is formed in a substantially cylindrical shape, for example, by rounding a rectangular metal plate into a cylindrical shape (see FIG. 3B). A gap extending in the axial direction is formed in a part of the urging member 90 in the circumferential direction.

  When the outer diameter of the biasing member 90 is disposed inside the second heat radiating member 50, the outer wall is in contact with the inner wall of the second heat radiating member 50 and can exert a biasing force in the radially outward direction. It is formed in the size. Thereby, when the urging member 90 is disposed inside the second heat radiating member 50, the outer wall of the second heat radiating member 50 is connected to the other surface of the sealing bodies 17, 27, 37 of the semiconductor modules 10, 20, 30. Press against the surface opposite to the first heat radiating member 40. As a result, one surface (the surface on the first heat radiating member 40 side) of the sealing bodies 17, 27, and 37 is pressed against the inner wall of the first heat radiating member 40.

  As described above, this embodiment abuts against the inner wall of the second heat radiating member 50 and presses the outer wall of the second heat radiating member 50 against the other surface of the sealing bodies 17, 27, and 37 of the semiconductor modules 10, 20, and 30. The urging member 90 provided inside the second heat radiating member 50 is further provided. Thereby, since the 2nd heat radiating member 50 and the sealing bodies 17, 27, and 37 will be in the state which contacted closely, the cooling effect of the semiconductor modules 10, 20, and 30 by the 2nd heat radiating member 50 can further be heightened. . Further, in this configuration, one surface of the sealing bodies 17, 27, and 37 is pressed against the inner wall of the first heat radiating member 40 by the urging member 90. Thereby, since the 1st heat radiating member 40 and the sealing bodies 17, 27, and 37 will be in the state which contacted closely, the cooling effect of the semiconductor modules 10, 20, and 30 by the 1st heat radiating member 40 can further be heightened. .

(Third embodiment)
A power converter according to a third embodiment of the present invention is shown in FIG. In the third embodiment, the shape of the second heat radiating member is different from that of the first embodiment.

  In the third embodiment, the second heat radiating member 50 has a fluid passage 51 through which fluid can flow inside the outer wall. In the present embodiment, water is circulated through the fluid passage 51 as a fluid. Thereby, the 2nd heat radiating member 50 can be water-cooled. Here, the fluid passage 51 corresponds to the “second fluid passage” in the claims.

  Thus, in this embodiment, since the fluid passage 51 is formed in the 2nd heat radiating member 50, the 2nd heat radiating member 50 can be water-cooled by distribute | circulating water as a fluid through the said fluid passage 51. . Thus, the cooling effect of the semiconductor modules 10, 20, 30 by the second heat radiating member 50 can be further enhanced by water cooling the second heat radiating member 50.

(Fourth embodiment)
The power converter device by 4th Embodiment of this invention is shown in FIG.

  The fourth embodiment is a combination of the second embodiment and the third embodiment. That is, 4th Embodiment is the structure which formed the fluid channel | path 51 in the 2nd heat radiating member 50 shown in 2nd Embodiment. With this configuration, the second heat radiating member 50 having the fluid passage 51 is pressed against the semiconductor modules 10, 20, and 30 by the biasing member 90. Therefore, the cooling effect of the semiconductor modules 10, 20, 30 by the second heat radiating member 50 can be further enhanced.

(Fifth embodiment)
A power converter according to a fifth embodiment of the present invention is shown in FIG. In the fifth embodiment, the shape of the second heat radiating member is different from that of the second embodiment.

  As shown in FIG. 6, in the fifth embodiment, the second heat radiating member 50 is divided into a plurality so as to correspond to each of the semiconductor modules 10, 20, and 30. In other words, the second heat radiating member 50 is configured by arranging the end portions of three heat radiating plate members (heat radiating plate members 52, 53, 54) in an annular shape while facing or abutting each other. At this time, each of the heat radiating plate members 52, 53, and 54 is formed such that the cross-sectional shape by a plane perpendicular to the axis of the first heat radiating member 40 is a trapezoid (see FIG. 6).

  In this configuration, the divided second heat radiating member 50 (heat radiating plate members 52, 53, 54) is pressed against each semiconductor module (10, 20, 30) independently by the urging member 90. Thereby, since the 2nd heat radiating member 50 and the sealing bodies 17, 27, and 37 will be in the state contacted uniformly and closely, the cooling effect of the semiconductor modules 10, 20, and 30 by the 2nd heat radiating member 50 is further improved. Can do. In addition, since the first heat radiating member 40 and the sealing bodies 17, 27, and 37 are in uniform and close contact with each other, the cooling effect of the semiconductor modules 10, 20, and 30 by the first heat radiating member 40 is further increased. Can be increased.

(Sixth embodiment)
A power converter according to a sixth embodiment of the present invention is shown in FIG. In the sixth embodiment, the shape of each semiconductor module is different from that of the first embodiment.

  In the sixth embodiment, as shown in FIG. 7, the sealing bodies 17, 27, and 37 of the semiconductor modules 10, 20, and 30 have one surface in contact with the inner wall of the first heat radiating member 40. Side surfaces between the first surface and the other surface are formed in a shape that can face or abut against each other. That is, in the semiconductor modules 10, 20, and 30, the side surface 18 of the sealing body 17 and the side surface 29 of the sealing body 27 face or contact each other, and the side surface 28 of the sealing body 27 and the side surface 39 of the sealing body 37 are The side surface 38 of the sealing body 37 and the side surface 19 of the sealing body 17 are disposed inside the first heat radiating member 40 so as to face or contact each other. At this time, each of the sealing bodies 17, 27, and 37 is formed such that the outer shape of the first heat radiating member 40 viewed from the axial direction is a trapezoid (see FIG. 7).

  In this configuration, the semiconductor modules 10, 20, and 30 can be annularly disposed in the circumferential direction with almost no gap in a state where the side surfaces of the sealing bodies 17, 27, and 37 are opposed to or in contact with each other. Thereby, the contact area with the 1st heat radiating member 40 of sealing body 17,27,37 can be enlarged. As a result, the cooling effect of the semiconductor modules 10, 20, 30 by the first heat radiating member 40 can be further enhanced.

(Other embodiments)
In the above-mentioned embodiment, the example which distribute | circulates water as a fluid was shown through the fluid channel | path formed in the 1st heat radiating member, the 2nd heat radiating member, and the 3rd heat radiating member. On the other hand, in another embodiment of the present invention, air may be circulated as a fluid in the fluid passage. In this case, the first heat radiating member, the second heat radiating member, and the third heat radiating member can be air-cooled.

  Moreover, in other embodiment of this invention, it is good also as a structure which enlarges the contact area of each heat radiating member and a fluid by forming a some protrusion or recessed part in the fluid channel | path of each heat radiating member, for example. In this structure, the cooling effect of each heat radiating member and semiconductor module by the fluid can be further enhanced.

  Moreover, in the above-mentioned embodiment, the example which forms a fluid channel | path (3rd fluid channel | path) in the 3rd heat radiating member was shown. On the other hand, in other embodiment of this invention, it is good also as a structure which does not form a fluid passage in the 3rd heat radiating member.

  Moreover, in the above-mentioned embodiment, the structure which a power converter device equips with a 1st heat radiating member, a 2nd heat radiating member, and a 3rd heat radiating member as a heat radiating member was shown. On the other hand, in other embodiment of this invention, it is good also as a structure provided with the 1st heat radiating member which has a fluid channel | path, and a 2nd heat radiating member without providing the 3rd heat radiating member as a heat radiating member. Alternatively, the second heat radiating member and the third heat radiating member may not be provided as the heat radiating member, and only the first heat radiating member having a fluid passage may be provided.

  In the above-described embodiment, the example in which the urging member is formed in a substantially cylindrical shape by a metal plate is shown. On the other hand, in another embodiment of the present invention, the urging member abuts on the inner wall of the second heat radiating member and can press the outer wall of the second heat radiating member against the semiconductor module. It may be formed in any shape with any material such as rubber.

  Moreover, in the above-mentioned embodiment, the example which makes a capacitor contact | abut on the outer wall of a 1st heat radiating member was shown. On the other hand, in another embodiment of the present invention, for example, a DC-DC converter, a boost converter, a reactor, a capacitor, and the like are brought into contact with the outer wall of the first heat radiating member as electronic components constituting another power converter. You may provide in this way. By providing these electronic components that generate heat during operation in contact with the outer wall of the first heat radiating member, the electronic components can be used by the first heat radiating member having a fluid passage while effectively utilizing the outer peripheral space of the power converter. It can be cooled effectively.

  Moreover, in the above-mentioned embodiment, the example in which the 1st heat radiating member was formed in the triangular cylinder shape was shown. On the other hand, in other embodiment of this invention, if the 1st heat radiating member is a hollow cylinder shape, it may be formed not only in a triangular cylinder but in other polygonal cylinder shape or cylindrical shape. . When the first heat radiating member is formed in a cylindrical shape, it is desirable that the surface of the semiconductor module that contacts the inner wall of the first heat radiating member is formed in a curved shape in accordance with the shape of the inner wall of the first heat radiating member. Further, the second heat radiating member is not limited to a triangular cylindrical shape, and may be formed in another polygonal cylindrical shape or a cylindrical shape.

  In the above-described embodiment, each semiconductor module has an example in which the first switching element and the second switching element are covered with one sealing body, that is, a so-called 2-in-1 configuration. On the other hand, in another embodiment of the present invention, the first switching element and the second switching element may be configured to be covered with different sealing bodies, that is, a 1 in 1 configuration. In addition, the semiconductor module may be formed by covering all the pairs of the first switching element and the second switching element respectively corresponding to the plurality of phases with one sealing body. In addition, the sealing body that covers the first switching element and the second switching element is not limited to a rectangle, and may be formed in any other plate shape such as a polygon or a circle.

  Moreover, in the above-mentioned embodiment, the three-phase brushless motor was illustrated as a rotary electric machine which a power converter device drives. On the other hand, in another embodiment of the present invention, not only three phases but also a semiconductor module corresponding to the number of other phases and a brushless motor having the corresponding number of phases may be driven.

  Moreover, in the above-mentioned embodiment, the example which comprises one system inverter by providing one semiconductor module for every phase of a rotary electric machine was shown. On the other hand, in another embodiment of the present invention, a plurality of inverters may be configured by providing a plurality of semiconductor modules for each phase of the rotating electrical machine. In this case, even if an inverter of one system fails, the drive of the rotating electrical machine can be continued by an inverter of another system.

Moreover, in the above-mentioned embodiment, the example which uses IGBT as a switching element of a semiconductor module was shown. On the other hand, in another embodiment of the present invention, a field effect transistor (FET) such as a MOSFET may be used as the switching element.
In another embodiment of the present invention, various motors such as a motor used in an electric power steering device and other motors mounted in addition to the vehicle (not limited to a driving motor for driving wheels of a hybrid vehicle) A rotating electric machine) may be a driving target.
Thus, the present invention is not limited to the above-described embodiment, and can be applied to other various embodiments without departing from the gist thereof.

DESCRIPTION OF SYMBOLS 1 ... Power converter 2 ... Electric rotating machine 4 ... Battery (power supply)
10, 20, 30 ... semiconductor modules 11, 21, 31 ... first switching element (switching element)
12, 22, 32 ... 2nd switching element (switching element)
17, 27, 37 ... Sealing body 40 ... First heat radiating member 41 ... First fluid passage

Claims (9)

A power conversion device that converts power from a power source into power for driving a rotating electrical machine,
A hollow cylindrical first heat radiating member having a first fluid passage through which fluid can flow;
A switching element that switches energization to the rotating electrical machine and a plate-shaped sealing body that covers the switching element are provided so that one surface of the sealing body is in contact with the inner wall of the first heat radiating member. A semiconductor module;
A power conversion device comprising:   The power converter according to claim 1, further comprising a cylindrical second heat radiating member provided inside the first heat radiating member so that an outer wall is in contact with the other surface of the sealing body.   The power conversion device according to claim 2, wherein the second heat radiating member has a second fluid passage through which a fluid can flow. The second heat radiating member is formed in a hollow cylindrical shape,
And a biasing member provided inside the second heat radiating member so as to contact the inner wall of the second heat radiating member and press the outer wall of the second heat radiating member against the other surface of the sealing body. The power converter according to claim 2 or 3. A plurality of the semiconductor modules are provided,
The power conversion device according to claim 4, wherein the second heat radiating member is divided into a plurality of parts corresponding to the plurality of semiconductor modules.   The power converter according to any one of claims 1 to 5, further comprising a capacitor that is provided in contact with an outer wall of the first heat radiating member and smoothes the power from the power source.   The power conversion device according to any one of claims 2 to 6, further comprising a third heat radiating member provided so as to abut one or both of axial both ends of the second heat radiating member. .   The power converter according to claim 7, wherein the third heat radiating member has a third fluid passage through which fluid can flow. A plurality of the semiconductor modules are provided,
The plurality of sealing bodies are formed in a shape in which the side surfaces between the one surface and the other surface can face each other or contact each other in a state where one surface is in contact with the inner wall of the first heat radiating member. The power converter according to claim 1, wherein the power converter is provided.

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