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JP2011253940A - Wafer dicing method, connecting method, and connecting structure - Google Patents

Wafer dicing method, connecting method, and connecting structure Download PDF

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Publication number
JP2011253940A
JP2011253940A JP2010126919A JP2010126919A JP2011253940A JP 2011253940 A JP2011253940 A JP 2011253940A JP 2010126919 A JP2010126919 A JP 2010126919A JP 2010126919 A JP2010126919 A JP 2010126919A JP 2011253940 A JP2011253940 A JP 2011253940A
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JP
Japan
Prior art keywords
wafer
adhesive layer
film
adhesive
adhesive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010126919A
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Japanese (ja)
Inventor
Junichi Nishimura
淳一 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Sony Chemical and Information Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemical and Information Device Corp filed Critical Sony Chemical and Information Device Corp
Priority to JP2010126919A priority Critical patent/JP2011253940A/en
Priority to TW100118995A priority patent/TW201201268A/en
Priority to PCT/JP2011/062700 priority patent/WO2011152492A1/en
Publication of JP2011253940A publication Critical patent/JP2011253940A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a wafer dicing method improving workability when dicing a wafer.SOLUTION: The wafer dicing method comprises a pasting step S1 of pasting the other surface 39b of a wafer 39 with an adhesive film, made by successively laminating an adhesive layer 22 and a protecting film 24 having permeability on one surface 10a of a wafer 10, to a dicing tape 18; an image pick-up step S2 of picking up an image of the one surface 10a of the wafer in the wafer 39 with the adhesive film; a dividing position deciding step S3 of deciding a position dividing the wafer 39 with the adhesive film on the basis of the picked up image; a cutting groove forming step S4 of forming a cutting groove having depth which does not reach from one surface 39a side to the other surface 39b of the wafer 39 with the adhesive film, on the wafer 39 with the adhesive film; a protecting member arranging step S5 of arranging a protecting member 62 on a surface of the protecting film 24 of the wafer 39 with the adhesive film; a dividing step S6 of forming a plurality of chips 60 with the adhesive films; and a pick-up step S7 of picking up chips 64 with adhesive layers.

Description

本発明は、接着層と透過性を有する保護フィルムとが順次積層されてなる接着フィルム付きウエハのダイシング方法、接続方法及び接続構造体に関する。   The present invention relates to a dicing method, a connection method, and a connection structure for a wafer with an adhesive film in which an adhesive layer and a protective film having transparency are sequentially laminated.

ＣＯＢ（Chip On Board）等のパッケージ・実装方法において、ＩＣ（Integrated Circuit）を基板上へ固定化する方法が多数存在し、例えば実装方向としてＩＣ表裏（フェイスアップ、フェイスダウン）、接着層（固定材）としてペーストやフィルム、導電粒子の有無など様々な方法がある。ダイシング以前にウエハへ接着層を貼り付ける工法として、ＡＣＦ（Anisotropic Conductive Film）やＮＣＦ（Non Particle Conductive Film）を用いた工法等が挙げられる。ＡＣＦやＮＣＦを用いた工法では、ＩＣの機能面に接着層が位置する。   There are many methods for fixing ICs (Integrated Circuits) on a substrate in a packaging / mounting method such as COB (Chip On Board). For example, as the mounting direction, IC front and back (face up, face down), adhesive layer (fixed) There are various methods such as paste, film, and the presence or absence of conductive particles. As a method of attaching an adhesive layer to a wafer before dicing, a method using an ACF (Anisotropic Conductive Film) or NCF (Non Particle Conductive Film) can be used. In the construction method using ACF or NCF, an adhesive layer is located on the functional surface of the IC.

ウエハのダイシング工法には、「レーザ（Dry）」や「プラズマ（Dry）」、「ブレード（Wet）」がある。これらの工法のうち、Dry環境（乾燥した環境）で行うレーザやプラズマの工法は、加工中のコンタミネーションに関して有利である。しかし、これらレーザやプラズマの工法に用いる装置は、一般的でなく、装置コストもブレードの３倍以上である。また、ダイシングを行う場合、位置決め（パターン認識）をするために、パターンが可視であること又はＩＲカメラで透視することが必要となる。しかし、ＩＲカメラは、一般的なブレードダイシング装置には装備されていない。   Wafer dicing methods include “laser (Dry)”, “plasma (Dry)”, and “blade (Wet)”. Of these methods, the laser and plasma methods performed in a dry environment (dry environment) are advantageous in terms of contamination during processing. However, the apparatus used for these laser and plasma methods is not common, and the apparatus cost is three times or more that of the blade. In addition, when dicing, in order to perform positioning (pattern recognition), it is necessary for the pattern to be visible or to be seen through with an IR camera. However, the IR camera is not installed in a general blade dicing apparatus.

また、ブレードダイシング工法を用いてウエハを分割（個片化）する場合、ウエハは、一時的に加工に用いる純水に曝される。この純水の役割の１つとしては、洗浄が挙げられる。この純水中には、加工によって削られたウエハの屑（主にシリコン）等が分散する。これらウエハの屑は、加工部材表面にタック性（粘着性）が無い場合、洗い流される。しかし、タック性を有する部材の場合、ウエハの屑は、部材に捕捉されて洗浄し難くなり、切削屑によるコンタミネーションが起こってしまう。切削屑が接着層に付着すると、切削屑が付着した面がＩＣの機能面であるため、最終的な実装を行った場合に、切削屑がＩＣの機能面に接触（アタック）してしまうおそれがある。また、薄型のウエハをダイシングする場合には、ウエハにチッピング（破損）が生じてしまい、加工性が良好でないという問題があった。   Further, when a wafer is divided (divided into pieces) using a blade dicing method, the wafer is temporarily exposed to pure water used for processing. One role of this pure water is cleaning. In this pure water, wafer scraps (mainly silicon) and the like shaved by processing are dispersed. These wafer scraps are washed away when there is no tackiness (adhesiveness) on the surface of the processed member. However, in the case of a member having tackiness, wafer waste is captured by the member and is difficult to clean, and contamination due to cutting waste occurs. When the cutting dust adheres to the adhesive layer, the surface to which the cutting dust adheres is a functional surface of the IC, and therefore, when final mounting is performed, the cutting waste may come into contact (attack) with the functional surface of the IC. There is. Further, when dicing a thin wafer, there is a problem that chipping (breakage) occurs in the wafer and the workability is not good.

特開２００５−１０１２９０号公報JP 2005-101290 A 特開２００５−１７５１３６号公報JP 2005-175136 A

本発明は、このような従来の実情に鑑みて提案されたものであり、ウエハをダイシングする際の加工性を良好にするウエハのダイシング方法、接続方法及び接続構造体を提供することを目的とする。   The present invention has been proposed in view of such a conventional situation, and an object of the present invention is to provide a wafer dicing method, a connection method, and a connection structure that improve workability when dicing the wafer. To do.

本発明に係るウエハのダイシング方法は、一方の面に回路パターンを有するウエハの該一方の面に、接着層と透過性を有する保護フィルムとが順次積層されてなる接着フィルム付きウエハの他方の面をダイシングテープに貼着する貼着工程と、前記接着フィルム付きウエハの一方の面で反射して前記接着層及び前記保護フィルムを透過した光を受光することにより、該接着フィルム付きウエハにおける前記ウエハの一方の面の画像を撮像する撮像工程と、前記撮像工程で撮像した画像に基づいて、前記接着フィルム付きウエハを分割する位置を決定する分割位置決定工程と、前記分割位置決定工程で決定した位置に基づいて、前記接着フィルム付きウエハに、該接着フィルム付きウエハの一方の面側から他方の面まで達しない深さの切削溝を形成する切削溝形成工程と、前記切削溝が形成された接着フィルム付きウエハの前記保護フィルムの表面に、保護部材を配設する保護部材配設工程と、前記保護部材を配設した接着フィルム付きウエハの他方の面を研削して該接着フィルム付きウエハを分割することにより、一方の面に前記回路パターンを有するチップの一方の面に前記接着層が積層された接着層付きチップと、前記保護フィルムとを備える複数の接着フィルム付きチップを形成する分割工程と、前記接着フィルム付きチップから、前記接着層付きチップをピックアップするピックアップ工程とを有する。   In the wafer dicing method according to the present invention, the other surface of the wafer with an adhesive film in which an adhesive layer and a transparent protective film are sequentially laminated on the one surface of the wafer having a circuit pattern on one surface. Bonding the wafer to the dicing tape, and receiving the light reflected on one surface of the wafer with the adhesive film and transmitted through the adhesive layer and the protective film, thereby the wafer in the wafer with the adhesive film An imaging step of capturing an image of one of the surfaces, a division position determining step for determining a position to divide the wafer with an adhesive film based on the image captured in the imaging step, and the division position determining step Based on the position, a cutting groove having a depth that does not reach the other surface from one side of the wafer with the adhesive film is formed on the wafer with the adhesive film. A cutting groove forming step to be formed, a protective member disposing step of disposing a protective member on the surface of the protective film of the wafer with the adhesive film in which the cutting groove is formed, and an adhesive film having the protective member disposed A chip with an adhesive layer in which the adhesive layer is laminated on one surface of a chip having the circuit pattern on one surface by grinding the other surface of the wafer and dividing the wafer with the adhesive film, and the protection A dividing step of forming a plurality of chips with an adhesive film provided with a film, and a pickup step of picking up the chip with an adhesive layer from the chip with an adhesive film.

本発明に係る接続方法は、上記ウエハのダイシング方法でピックアップした接着層付きチップを、接着層を介して電極を有する回路基板に圧着し、該電極と該接着層付きチップの回路パターンとを接続する圧着工程を有する。   In the connection method according to the present invention, the chip with the adhesive layer picked up by the wafer dicing method is pressure-bonded to a circuit board having an electrode through the adhesive layer, and the electrode and the circuit pattern of the chip with the adhesive layer are connected. A crimping step to perform.

本発明に係る接続構造体は、上記接続方法により得られるものである。   The connection structure according to the present invention is obtained by the above connection method.

本発明によれば、ウエハをダイシングする際のチッピングを防止して、ウエハをダイシングする際の加工性を良好にすることができる。   ADVANTAGE OF THE INVENTION According to this invention, the chipping at the time of dicing a wafer can be prevented, and the workability at the time of dicing a wafer can be made favorable.

本実施の形態に係るウエハのダイシング方法の一例を説明するためのフローチャートである。It is a flowchart for demonstrating an example of the dicing method of the wafer which concerns on this Embodiment. 治具にウエハを接着する段階の一例を示す概略図である。It is the schematic which shows an example of the step which adhere | attaches a wafer on a jig | tool. ウエハに接着フィルムを貼付けする段階の一例を示す概略図である。It is the schematic which shows an example of the step which affixes an adhesive film on a wafer. 接着フィルム付きウエハが載置されたダイシング装置の一例を示す概略概略図である。It is a schematic diagram showing an example of a dicing machine on which a wafer with an adhesive film is placed. 撮像工程及び分割位置決定工程の一例を示す概略図である。It is the schematic which shows an example of an imaging process and a division | segmentation position determination process. 切削溝形成工程の一例を示す概略図である。It is the schematic which shows an example of a cutting groove formation process. 保護部材配設工程の一例を示す概略図である。It is the schematic which shows an example of a protection member arrangement | positioning process. 分割工程の一例を示す概略図である。It is the schematic which shows an example of a division | segmentation process. ピックアップ工程の一例を示す概略図である。It is the schematic which shows an example of a pick-up process. 本実施の形態に係る接続方法の一例を説明するためのフローチャートである。It is a flowchart for demonstrating an example of the connection method which concerns on this Embodiment. 圧着工程の一例を示す概略図である。It is the schematic which shows an example of a crimping | compression-bonding process. 圧着工程で圧着された接続構造体の一例を示す概略図である。It is the schematic which shows an example of the connection structure crimped | bonded by the crimping | compression-bonding process. 圧着工程の他の例を示す概略図である。It is the schematic which shows the other example of a crimping | compression-bonding process.

以下、本発明を適用したウエハのダイシング方法、接続方法及び接続構造体の具体的な実施の形態の一例について、図面を参照しながら以下の順序で説明する。
１．ウエハのダイシング方法
１−１．貼着工程
１−２．撮像工程
１−２−１．ダイシング装置
１−２−２．撮像方法
１−３．分割位置決定工程
１−４．切削溝形成工程
１−５．保護部材配設工程
１−６．分割工程
１−７．ピックアップ工程
２．接続方法及び接続構造体
２−１．圧着工程
３．他の実施形態
４．実施例 Hereinafter, an example of specific embodiments of a wafer dicing method, a connection method, and a connection structure to which the present invention is applied will be described in the following order with reference to the drawings.
1. 1. Wafer dicing method 1-1. Adhesion process 1-2. Imaging process 1-2-1. Dicing device 1-2-2. Imaging method 1-3. Division position determination step 1-4. Cutting groove forming step 1-5. Protection member disposing step 1-6. Division process 1-7. 1. Pickup process Connection method and connection structure 2-1. Crimping process 3. Other Embodiment 4 Example

＜１．ウエハのダイシング方法＞
図１に示すように、本実施の形態に係るウエハのダイシング方法は、貼着工程Ｓ１と、撮像工程Ｓ２と、分割位置決定工程Ｓ３と、切削溝形成工程Ｓ４と、保護部材配設工程Ｓ５と、分割工程Ｓ６と、ピックアップ工程Ｓ７とを有する。 <1. Wafer dicing method>
As shown in FIG. 1, the wafer dicing method according to the present embodiment includes an attaching step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, and a protective member disposing step S5. And a dividing step S6 and a pickup step S7.

＜１−１．貼着工程＞
図２、図３に示すように、貼着工程Ｓ１において、一方の面に回路パターンであるバンプ１６を有するウエハ１０の一方の面（表面）１０ａに、接着層２２と透過性を有する保護フィルム２４とが順次積層されてなる接着フィルム付きウエハ３９の他方の面１０ｂをダイシングテープ１８に貼着する。例えば、貼着工程Ｓ１において、次のような処理を行う。 <1-1. Adhesion process>
As shown in FIGS. 2 and 3, in the bonding step S <b> 1, an adhesive layer 22 and a protective film having transparency are provided on one surface (front surface) 10 a of a wafer 10 having a bump 16 as a circuit pattern on one surface. 24 is attached to the dicing tape 18 on the other surface 10b of the wafer 39 with an adhesive film formed by sequentially laminating 24. For example, the following process is performed in the sticking step S1.

まず、図２に示すように、準備したウエハ１０を治具１２に固定する。   First, as shown in FIG. 2, the prepared wafer 10 is fixed to a jig 12.

ウエハ１０としては、例えば、シリコンウエハ等の半導体ウエハが挙げられる。ウエハ１０の一方の面１０ａには、格子状のスクライブライン１４が形成されている。ウエハ１０の一方の面１０ａには、回路パターンであるバンプ１６が形成されている。   An example of the wafer 10 is a semiconductor wafer such as a silicon wafer. On one surface 10 a of the wafer 10, lattice-like scribe lines 14 are formed. A bump 16 that is a circuit pattern is formed on one surface 10 a of the wafer 10.

治具１２は、例えば、ウエハ１０の直径よりも大きな直径を有するリング状又は枠状のフレーム２０と、一方の面が接着性を有するダイシングテープ１８とを備えている。   The jig 12 includes, for example, a ring-shaped or frame-shaped frame 20 having a diameter larger than the diameter of the wafer 10 and a dicing tape 18 having one surface having adhesiveness.

ダイシングテープ１８は、例えば、フレーム２０の一方の面の側に貼り付けられ、フレーム２０の内側に展張されている。ウエハ１０は、例えば、治具１２の中央部に貼り付けられる。また、ウエハ１０は、一方の面１０ａ（以下、「機能面１０ａ」ともいう。）の他方の面（反対側の面）１０ｂがダイシングテープ１８に貼り付けられる。ダイシングテープ１８としては、例えば、紫外線を照射することにより剥離力が小さくなる粘着フィルムが用いられる。これにより、ウエハ１０を複数のチップ２１に分割した後、ダイシングテープ１８に紫外線を照射することで、個々のチップ２１をピックアップするときにチップ２１をダイシングテープ１８から容易に分離することができる。   For example, the dicing tape 18 is affixed to one side of the frame 20 and is spread on the inside of the frame 20. For example, the wafer 10 is attached to the center of the jig 12. In addition, the other surface (opposite surface) 10 b of one surface 10 a (hereinafter also referred to as “functional surface 10 a”) of the wafer 10 is attached to the dicing tape 18. As the dicing tape 18, for example, an adhesive film whose peeling force is reduced by irradiating ultraviolet rays is used. Thereby, after dividing the wafer 10 into a plurality of chips 21, the chips 21 can be easily separated from the dicing tape 18 when the individual chips 21 are picked up by irradiating the dicing tape 18 with ultraviolet rays.

続いて、図３に示すように、ウエハ１０の機能面１０ａに、保護フィルム２４と接着層２２とが積層されてなる接着フィルム２６を配置する。   Subsequently, as shown in FIG. 3, an adhesive film 26 in which a protective film 24 and an adhesive layer 22 are laminated is disposed on the functional surface 10 a of the wafer 10.

接着層２２は、例えば、膜形成樹脂、液状硬化成分及び硬化剤を含んでいる。また、接着層２２は、例えば、各種ゴム成分、柔軟剤、各種フィラー類等の添加剤や、導電性粒子を含んでいてもよい。接着層２２は、ＮＣＦ（Non Particle Conductive Film）、ＡＣＦ（Anisotropic Conductive Film）、またはそれらを積層させたものであってもよい。   The adhesive layer 22 includes, for example, a film forming resin, a liquid curable component, and a curing agent. The adhesive layer 22 may contain additives such as various rubber components, softeners, various fillers, and conductive particles, for example. The adhesive layer 22 may be NCF (Non Particle Conductive Film), ACF (Anisotropic Conductive Film), or a laminate thereof.

膜形成樹脂としては、フェノキシ樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂を例示できる。膜形成樹脂は、材料の入手の容易さ及び接続信頼性の観点から、フェノキシ樹脂を含むことが好ましい。液状硬化成分としては、液状エポキシ樹脂、アクリレートを例示できる。液状硬化成分は、接続信頼性及び硬化物の安定性の観点から、２以上の官能基を有することが好ましい。硬化剤としては、液状硬化成分が液状エポキシ樹脂の場合は、イミダゾール、アミン類、スルホニウム塩、オニウム塩、フェノール類を例示できる。液状硬化成分がアクリレートの場合には、硬化剤として有機過酸化物を例示できる。   Examples of the film forming resin include phenoxy resin, polyester resin, polyamide resin, and polyimide resin. The film-forming resin preferably contains a phenoxy resin from the viewpoint of easy availability of materials and connection reliability. Examples of the liquid curing component include liquid epoxy resins and acrylates. The liquid curing component preferably has two or more functional groups from the viewpoint of connection reliability and stability of the cured product. Examples of the curing agent include imidazole, amines, sulfonium salts, onium salts, and phenols when the liquid curing component is a liquid epoxy resin. When the liquid curing component is an acrylate, an organic peroxide can be exemplified as the curing agent.

接着層２２の厚さは、バンプ１６の高さ以上の厚さとするのが好ましい。すなわち、接着層２２の厚さは、バンプ１６を覆うことが可能な厚さとするのが好ましい。   It is preferable that the thickness of the adhesive layer 22 be equal to or greater than the height of the bump 16. That is, the thickness of the adhesive layer 22 is preferably set to a thickness that can cover the bumps 16.

保護フィルム２４は、ダイシング装置などを用いてウエハ１０を分割するときに、切削屑などが接着層２２に付着することを防止する。保護フィルム２４としては、例えば、ポリエステルフィルム、ポリエチレンテレフタレートフィルム等のプラスチック材料、上質紙、グラシン紙等の紙類等が挙げられる。   The protective film 24 prevents cutting chips and the like from adhering to the adhesive layer 22 when the wafer 10 is divided using a dicing apparatus or the like. Examples of the protective film 24 include plastic materials such as polyester film and polyethylene terephthalate film, paper such as high-quality paper and glassine paper, and the like.

保護フィルム２４としては、例えば、可視光を透過する機能を有するものが用いられる。これにより、安価な光学系を用いた場合であっても、保護フィルム２４および接着層２２をウエハ１０に貼り付けた状態で、ウエハ１０の表面の画像を撮像することができる。すなわち、ＩＲカメラのような高価な光学系を使用しなくても、ウエハ１０の機能面に形成されたスクライブライン１４、バンプ１６、アライメントマークなどの画像を撮像することができる。   As the protective film 24, for example, a film having a function of transmitting visible light is used. Thus, even when an inexpensive optical system is used, an image of the surface of the wafer 10 can be taken with the protective film 24 and the adhesive layer 22 attached to the wafer 10. That is, images such as the scribe lines 14, the bumps 16, and the alignment marks formed on the functional surface of the wafer 10 can be taken without using an expensive optical system such as an IR camera.

保護フィルム２４は、可視光のうち、特定の波長の光を吸収してよい。保護フィルム２４は、波長が４４０ｎｍ以上７００ｎｍ以下の光のうち、特定の波長の光を吸収してもよい。この場合、ウエハ１０の表面の可視光画像を撮像すると、当該可視光画像において保護フィルム２４が存在する領域が着色される。これにより、ウエハ１０の表面を撮像した可視光画像に基づいて、保護フィルム２４の有無を判別することができる。   The protective film 24 may absorb light having a specific wavelength among visible light. The protective film 24 may absorb light having a specific wavelength among light having a wavelength of 440 nm to 700 nm. In this case, when a visible light image of the surface of the wafer 10 is captured, a region where the protective film 24 exists in the visible light image is colored. Thereby, the presence or absence of the protective film 24 can be determined based on a visible light image obtained by imaging the surface of the wafer 10.

保護フィルム２４が特定の波長の光を吸収する場合であっても、保護フィルム２４が、可視光のうち上記特定の波長の光以外の光を十分に透過させる場合には、保護フィルム２４が存在する領域において、ウエハ１０の表面のパターンを判別することができる。   Even when the protective film 24 absorbs light of a specific wavelength, the protective film 24 exists when the protective film 24 sufficiently transmits light other than light of the specific wavelength among visible light. The pattern of the surface of the wafer 10 can be discriminated in the area to be processed.

保護フィルム２４の厚さは、５０〜１００μｍの範囲が好ましい。保護フィルム２４の厚さが５０μｍ未満の場合には、ダイシング装置等を用いてウエハ１０を分割する工程の途中で保護フィルム２４が接着層２２から剥離する場合があり、保護フィルム２４の厚さが５０μｍ以上の場合と比較して加工性に劣る。保護フィルム２４の厚さが１００μｍを超えると、保護フィルム２４の上に接着層２２を塗布して接着フィルム２６を製造するときに、保護フィルム２４の上に接着層２２を塗布しにくくなる。   The thickness of the protective film 24 is preferably in the range of 50 to 100 μm. When the thickness of the protective film 24 is less than 50 μm, the protective film 24 may be peeled off from the adhesive layer 22 during the process of dividing the wafer 10 using a dicing apparatus or the like. It is inferior in workability compared with the case of 50 micrometers or more. When the thickness of the protective film 24 exceeds 100 μm, it is difficult to apply the adhesive layer 22 on the protective film 24 when the adhesive layer 22 is applied on the protective film 24 to produce the adhesive film 26.

保護フィルム２４と接着層２２との間の剥離力は、０．１７Ｎ／５ｃｍ以上であることが好ましい。ここで、保護フィルム２４と接着層２２との間の剥離力とは、例えば、ＪＩＳ Ｚ０２３７に基づいて、１８０度方向にＴ型剥離した場合の剥離力を示す。保護フィルム２４と接着層２２との間の剥離力が０．１７Ｎ／５ｃｍ未満の場合には、ダイシング装置などを用いてウエハ１０を分割する工程、すなわち、後に詳述する分割工程Ｓ６の途中で、保護フィルム２４から後述する接着フィルム付きチップ６４が剥離する場合があり、保護フィルム２４と接着層２２との間の剥離力が０．１７Ｎ／ｃｍ以上の場合と比較して加工性に劣る。また、保護フィルム２４と接着層２２との間の剥離力は、２．０Ｎ／５ｃｍ以下であることが好ましい。保護フィルム２４と接着層２２との間の剥離力が２．０Ｎ／ｃｍを超える場合には、保護フィルムが一部だけ剥がれ残ってしまい、ピックアップ工程Ｓ７における剥離性が良好ではなくなるからである。   The peeling force between the protective film 24 and the adhesive layer 22 is preferably 0.17 N / 5 cm or more. Here, the peeling force between the protective film 24 and the adhesive layer 22 indicates, for example, the peeling force when T-type peeling is performed in the 180 degree direction based on JIS Z0237. When the peeling force between the protective film 24 and the adhesive layer 22 is less than 0.17 N / 5 cm, the step of dividing the wafer 10 using a dicing apparatus or the like, that is, in the middle of the dividing step S6 described in detail later. In some cases, a chip 64 with an adhesive film, which will be described later, is peeled off from the protective film 24, and the workability is inferior compared to the case where the peeling force between the protective film 24 and the adhesive layer 22 is 0.17 N / cm or more. Moreover, it is preferable that the peeling force between the protective film 24 and the contact bonding layer 22 is 2.0 N / 5cm or less. This is because when the peeling force between the protective film 24 and the adhesive layer 22 exceeds 2.0 N / cm, only part of the protective film is left and the peelability in the pickup step S7 is not good.

保護フィルム２４と接着層２２との間の剥離力は、保護フィルム２４の表面に離型処理を施すことで調整することができる。離型処理は、例えば、シリコーン系の剥離剤を保護フィルム２４の表面に塗布した後、保護フィルム２４を加熱して、保護フィルム２４を乾燥させることで実施できる。   The peeling force between the protective film 24 and the adhesive layer 22 can be adjusted by performing a release treatment on the surface of the protective film 24. The mold release treatment can be performed, for example, by applying a silicone release agent to the surface of the protective film 24 and then heating the protective film 24 to dry the protective film 24.

保護フィルム２４と接着層２２との間の剥離力は、図２に関連して説明した治具１２にウエハ１０を接着する段階における、ウエハ１０とダイシングテープ１８との剥離力より小さくてよい。これにより、後に詳述するように、ピックアップ工程Ｓ７において、ウエハ１０を加工した後の保護フィルム２４の剥離性を良好にすることができる。   The peeling force between the protective film 24 and the adhesive layer 22 may be smaller than the peeling force between the wafer 10 and the dicing tape 18 at the stage of bonding the wafer 10 to the jig 12 described with reference to FIG. Thereby, as will be described in detail later, it is possible to improve the peelability of the protective film 24 after processing the wafer 10 in the pickup step S7.

接着フィルム２６は、波長が４４０ｎｍ以上７００ｎｍ以下の光の透過率が７４％以上であることが好ましい。この光の透過率は、保護フィルム２４又は接着層２２の材質、厚さ、表面処理などにより調整できる。光の透過率は、保護フィルム２４又は接着層２２に添加する添加剤の種類や添加量により調整できる。例えば、接着層２２に無機フィラーを添加することで、接着層２２の光の透過率を制御することができる。このような透過率とすることにより、上述したように、ＩＲカメラのような高価な光学系を使用しなくても、ウエハ１０の機能面に形成されたスクライブライン１４、バンプ１６、アライメントマークなどの画像を撮像することができる。   The adhesive film 26 preferably has a light transmittance of 74% or more at a wavelength of 440 nm to 700 nm. The light transmittance can be adjusted by the material, thickness, surface treatment, and the like of the protective film 24 or the adhesive layer 22. The light transmittance can be adjusted by the type and amount of the additive added to the protective film 24 or the adhesive layer 22. For example, the light transmittance of the adhesive layer 22 can be controlled by adding an inorganic filler to the adhesive layer 22. By setting such transmittance, as described above, the scribe lines 14, bumps 16, alignment marks, etc. formed on the functional surface of the wafer 10 without using an expensive optical system such as an IR camera. Images can be taken.

ここで、波長が４４０ｎｍ以上７００ｎｍ以下の光の透過率が７４％以上とは、波長が４４０ｎｍ以上７００ｎｍ以下の光の透過率の最大値が７４％以上であることを示す。また、光の透過率は、接着フィルム２６の厚さによって異なる。そこで、光の透過率とは、ウエハ１０に貼り付けられた状態における接着フィルム２６の厚さにおける光の透過率を示す。例えば、接着フィルム２６は、波長が４４０ｎｍ以上７００ｎｍ以下の全範囲における光の透過率が７４％以上であってもよい。   Here, the transmittance of light having a wavelength of 440 nm to 700 nm is 74% or more indicates that the maximum transmittance of light having a wavelength of 440 nm to 700 nm is 74% or more. The light transmittance varies depending on the thickness of the adhesive film 26. Therefore, the light transmittance indicates the light transmittance at the thickness of the adhesive film 26 in a state of being attached to the wafer 10. For example, the adhesive film 26 may have a light transmittance of 74% or more over the entire wavelength range of 440 nm to 700 nm.

続いて、例えば図３に示すように、押圧装置２８を用いて、接着フィルム２６をウエハ１０に貼付する。   Subsequently, for example, as illustrated in FIG. 3, the adhesive film 26 is attached to the wafer 10 using the pressing device 28.

押圧装置２８は、例えば、ステージ３０とヘッド３２とを備えている。ステージ３０は、例えば、ウエハ１０を載置している。また、ウエハ１０は、治具１２に保持されたまま、ステージ３０に載置される。また、ステージ３０は、例えば加熱装置３４を有する。なお、接着フィルム２６をウエハ１０に貼付する段階においては、加熱装置３４を使用しなくてもよい。   For example, the pressing device 28 includes a stage 30 and a head 32. For example, the wafer 30 is placed on the stage 30. Further, the wafer 10 is placed on the stage 30 while being held by the jig 12. Moreover, the stage 30 has the heating apparatus 34, for example. It should be noted that the heating device 34 need not be used at the stage of attaching the adhesive film 26 to the wafer 10.

ヘッド３２は、例えば図３に示すように、押圧部材３６と、押圧部材３６を保持する保持部３８とを有する。ヘッド３２は、押圧部材３６をステージ３０側に向かって押圧する。押圧部材３６は、例えば、弾性体で構成される。弾性体としては、シリコーンゴムなどのエラストマーを用いることができる。これにより、金属製の押圧部材と比較して、接着フィルム２６をウエハ１０に均一に貼付することができる。   For example, as shown in FIG. 3, the head 32 includes a pressing member 36 and a holding portion 38 that holds the pressing member 36. The head 32 presses the pressing member 36 toward the stage 30 side. The pressing member 36 is made of an elastic body, for example. An elastomer such as silicone rubber can be used as the elastic body. Thereby, compared with a metal pressing member, the adhesive film 26 can be uniformly attached to the wafer 10.

続いて、押圧装置２８は、表面に接着フィルム２６が配置されたウエハ１０を、ステージ３０とヘッド３２との間に挟んで押圧する。すなわち、ヘッド３２に保持されている押圧部材３６で、接着フィルム２６をウエハ１０の機能面に押圧する。これにより、接着フィルム２６をウエハ１０に貼付することができる。   Subsequently, the pressing device 28 presses the wafer 10 having the adhesive film 26 disposed on the surface thereof between the stage 30 and the head 32. That is, the adhesive film 26 is pressed against the functional surface of the wafer 10 by the pressing member 36 held by the head 32. Thereby, the adhesive film 26 can be stuck on the wafer 10.

以上のようにして、貼着工程Ｓ１では、フィルム付きウエハにおけるウエハ１０の他方の面１０ｂがダイシングテープに貼着される。   As described above, in the attaching step S1, the other surface 10b of the wafer 10 in the wafer with film is attached to the dicing tape.

＜１−２．撮像工程＞
撮像工程Ｓ２では、接着フィルム付きウエハ３９におけるウエハ１０の一方の面１０ａ（以下、「ウエハ１０の機能面１０ａ」という。）で反射して接着層２２及び保護フィルム２４を透過した光を受光することにより、機能面１０ａの画像を撮像する。 <1-2. Imaging process>
In the imaging step S <b> 2, light that is reflected by one surface 10 a of the wafer 10 in the wafer 39 with an adhesive film (hereinafter referred to as “functional surface 10 a of the wafer 10”) and transmitted through the adhesive layer 22 and the protective film 24 is received. Thus, an image of the functional surface 10a is taken.

＜１−２−１．ダイシング装置＞
撮像工程Ｓ２では、例えば、図４に示すダイシング装置４０が用いられる。ダイシング装置は、チャックテーブル４２と、アライメントステージ４４と、撮像部４６と、切削部４８と、制御部５２とを備える。 <1-2-1. Dicing machine>
In the imaging step S2, for example, a dicing device 40 shown in FIG. 4 is used. The dicing apparatus includes a chuck table 42, an alignment stage 44, an imaging unit 46, a cutting unit 48, and a control unit 52.

チャックテーブル４２は、例えば、図示しない減圧装置により治具１２を吸引して、チャックテーブル４２の上に治具１２を固定する。   For example, the chuck table 42 sucks the jig 12 by a decompression device (not shown) and fixes the jig 12 on the chuck table 42.

アライメントステージ４４は、例えば、制御部５２の指示に基づいて、チャックテーブル４２をｘ方向およびｙ方向に移動させる。   For example, the alignment stage 44 moves the chuck table 42 in the x direction and the y direction based on an instruction from the control unit 52.

撮像部４６は、例えば、ウエハ１０を照明する照明部材と、ウエハ１０の表面で反射した光を受光する光学系と、光学系が捉えた像を撮像する撮像素子とを有する。撮像部４６は、ウエハ１０の機能面１０ａで反射して接着層２２及び保護フィルム２４を透過した光を受光することにより、ウエハ１０の機能面１０ａの画像を撮像する。撮像部４６は、撮像した画像の情報を制御部５２に送信する。撮像部４６は、特に限定されるものではないが、安価な光学系を用いることができる理由から、可視光画像を撮像することが好ましい。   The imaging unit 46 includes, for example, an illumination member that illuminates the wafer 10, an optical system that receives light reflected by the surface of the wafer 10, and an imaging element that captures an image captured by the optical system. The imaging unit 46 captures an image of the functional surface 10 a of the wafer 10 by receiving light reflected by the functional surface 10 a of the wafer 10 and transmitted through the adhesive layer 22 and the protective film 24. The imaging unit 46 transmits information on the captured image to the control unit 52. The imaging unit 46 is not particularly limited, but it is preferable to capture a visible light image because an inexpensive optical system can be used.

切削部４８は、制御部５２の指示に基づいて、ウエハ１０を切削する。切削部４８は、例えば、ウエハ１０を切削するブレード５０を有する。切削部４８は、回転するブレード５０をウエハ１０に押圧して、ウエハ１０等を切削する。   The cutting unit 48 cuts the wafer 10 based on an instruction from the control unit 52. The cutting unit 48 includes, for example, a blade 50 that cuts the wafer 10. The cutting unit 48 presses the rotating blade 50 against the wafer 10 to cut the wafer 10 and the like.

駆動部５６は、制御部５２の画像処理部５４から、ウエハ１０を分割する位置に関する情報を受け取る。駆動部５６は、ウエハ１０を分割する位置に関する情報に基づいて、アライメントステージ４４及び切削部４８を駆動する。これにより、ダイシング装置４０は、ウエハ１０を分割（個片化）することができる。   The drive unit 56 receives information regarding the position where the wafer 10 is divided from the image processing unit 54 of the control unit 52. The drive unit 56 drives the alignment stage 44 and the cutting unit 48 based on information regarding the position where the wafer 10 is divided. Thereby, the dicing apparatus 40 can divide (divide into pieces) the wafer 10.

＜１−２−２．撮像方法＞
撮像工程Ｓ２では、例えば上述したダイシング装置４０を用いて、次の処理を行う。 <1-2-2. Imaging method>
In the imaging step S2, the following processing is performed using, for example, the dicing apparatus 40 described above.

まず、撮像部４６は、ウエハ１０の機能面１０ａで反射して接着層２２及び保護フィルム２４を透過した光を受光することにより、ウエハ１０の機能面１０ａの画像を撮像する。続いて、撮像部４６は、撮像した画像の情報を制御部５２に送信する。続いて、ダイシング装置４０の画像処理部５４が、撮像部４６が撮像した画像の情報を受け取る。   First, the imaging unit 46 captures an image of the functional surface 10 a of the wafer 10 by receiving light reflected by the functional surface 10 a of the wafer 10 and transmitted through the adhesive layer 22 and the protective film 24. Subsequently, the imaging unit 46 transmits information on the captured image to the control unit 52. Subsequently, the image processing unit 54 of the dicing apparatus 40 receives information on the image captured by the imaging unit 46.

＜１−３．分割位置決定工程＞
分割位置決定工程Ｓ３では、撮像工程Ｓ２で撮像した画像に基づいて、接着フィルム付きウエハ３９を分割する位置を決定する。例えば、分割位置決定工程Ｓ３では図５に示すように、画像処理部５４が、ウエハ１０の機能面１０ａの画像からスクライブライン１４の位置を認識し、スクライブライン１４に沿って、ウエハ１０を分割する位置を決定する。 <1-3. Division position determination process>
In the division position determination step S3, the position at which the wafer 39 with an adhesive film is divided is determined based on the image captured in the imaging step S2. For example, in the division position determination step S3, as shown in FIG. 5, the image processing unit 54 recognizes the position of the scribe line 14 from the image of the functional surface 10a of the wafer 10, and divides the wafer 10 along the scribe line 14. Decide where to go.

＜１−４．切削溝形成工程＞
切削溝形成工程Ｓ４では、例えば図６に示すように、分割位置決定工程Ｓ３で決定した位置に基づいて、接着フィルム付きウエハ３９に、接着フィルム付きウエハ３９の一方の面３９ａ側から他方の面３９ｂまで達しない深さの切削溝６１を形成する。 <1-4. Cutting groove forming process>
In the cutting groove forming step S4, for example, as shown in FIG. 6, based on the position determined in the division position determining step S3, the wafer 39 with an adhesive film is moved from the one surface 39a side to the other surface of the wafer 39 with an adhesive film. A cutting groove 61 having a depth that does not reach 39b is formed.

例えば、切削溝形成工程Ｓ４では、上述した図５に示すダイシング装置４０を用いて以下の処理を行う。   For example, in the cutting groove forming step S4, the following processing is performed using the dicing apparatus 40 shown in FIG.

まず、画像処理部５４がスクライブライン１４に沿って、ウエハ１０をｘ方向に分割することを決定した場合、駆動部５６は、アライメントステージ４４を駆動して、スクライブライン１４の一端がブレード５０の下方に位置するように、チャックテーブル４２を移動させる。   First, when the image processing unit 54 determines to divide the wafer 10 in the x direction along the scribe line 14, the drive unit 56 drives the alignment stage 44 so that one end of the scribe line 14 is connected to the blade 50. The chuck table 42 is moved so as to be positioned below.

続いて、駆動部５６は、切削部４８を駆動して、ブレード５０を回転させた状態で切削部４８を下方に移動させて、ブレード５０をウエハ１０に圧接させる。   Subsequently, the driving unit 56 drives the cutting unit 48 to move the cutting unit 48 downward in a state where the blade 50 is rotated, and press the blade 50 against the wafer 10.

続いて、駆動部５６は、アライメントステージ４４を駆動して、ウエハ１０をｘ方向に移動させる。   Subsequently, the drive unit 56 drives the alignment stage 44 to move the wafer 10 in the x direction.

これにより、切削溝形成工程Ｓ４では、スクライブライン１４に沿って、ウエハ１０を分割し、接着フィルム付きウエハ３９の一方の面３９ａ側から他方の面３９ｂまで達しない深さの切削溝６１、すなわち、チップ２１の仕上がり厚さに相当する深さの切削溝６１が形成された接着フィルム付きウエハ３９を形成する。   Thereby, in the cutting groove forming step S4, the wafer 10 is divided along the scribe line 14, and the cutting groove 61 having a depth that does not reach from the one surface 39a side of the wafer 39 with the adhesive film to the other surface 39b, that is, Then, the wafer 39 with an adhesive film in which the cutting groove 61 having a depth corresponding to the finished thickness of the chip 21 is formed is formed.

＜１−５．保護部材配設工程＞
保護部材配設工程Ｓ５では、切削溝形成工程Ｓ４で切削溝６１が形成された接着フィルム付きウエハ３９の保護フィルム２４の表面に、保護部材６２を配設する。 <1-5. Protection member arrangement process>
In the protective member disposing step S5, the protective member 62 is disposed on the surface of the protective film 24 of the wafer 39 with the adhesive film in which the cutting groove 61 is formed in the cutting groove forming step S4.

例えば図７（Ａ）、図７（Ｂ）に示すように、保護部材配設工程Ｓ５では、接着フィルム付きウエハ３９をダイシングテープ１８から剥がすとともに、接着フィルム付きウエハ３９の一方の面３９ａ側に、保護部材６２を貼着して配設する。このような保護部材６２としては、例えば、バックグラインドテープが挙げられる。粘着剤は、その後、保護部材６２が剥離される際に粘着成分が接着フィルム付きウエハ３９の表面に残らないようにするため、紫外線照射型の保護テープ、すなわち、ＵＶテープを使用するのが好ましい。保護部材６２を配設した接着フィルム付きウエハ３９は、次の分割工程Ｓ６に移行される。   For example, as shown in FIGS. 7A and 7B, in the protective member disposing step S5, the wafer 39 with the adhesive film is peeled off from the dicing tape 18 and also on the one surface 39a side of the wafer 39 with the adhesive film. The protective member 62 is attached and disposed. An example of such a protective member 62 is a back grind tape. As the pressure-sensitive adhesive, it is preferable to use an ultraviolet irradiation type protective tape, that is, a UV tape so that the pressure-sensitive adhesive component does not remain on the surface of the wafer 39 with the adhesive film when the protective member 62 is peeled thereafter. . The wafer with adhesive film 39 provided with the protective member 62 is moved to the next division step S6.

＜１−６．分割工程＞
分割工程Ｓ６では、例えば図８に示すように、保護部材配設工程Ｓ５で保護部材６２を配設した接着フィルム付きウエハ３９の他方の面３９ｂを研削して、接着フィルム付きウエハ３９を分割する。これにより、一方の面にバンプ１６を有するチップ２１の一方の面に接着層２２が積層された接着層付きチップ６４と、保護フィルム２４とを備える複数の接着フィルム付きチップ６０を形成する。 <1-6. Division process>
In the dividing step S6, for example, as shown in FIG. 8, the other surface 39b of the wafer 39 with the adhesive film on which the protective member 62 is arranged in the protective member arranging step S5 is ground to divide the wafer 39 with the adhesive film. . Thus, a plurality of chips 60 with an adhesive film including the chip 64 with an adhesive layer in which the adhesive layer 22 is laminated on one surface of the chip 21 having the bumps 16 on one surface and the protective film 24 are formed.

例えば、分割工程Ｓ６は、少なくともチャックテーブルと、研削砥石と、研削砥石を駆動する駆動部と、駆動部を支持し上下方向の移動をガイドするガイド部と、駆動部を上下方向に精密に移動させる移動用駆動部とを備える研削装置によって行うことができる。   For example, the dividing step S6 includes at least a chuck table, a grinding wheel, a driving unit that drives the grinding wheel, a guide unit that supports the driving unit and guides the vertical movement, and the driving unit precisely moves in the vertical direction. It can carry out with a grinding device provided with the drive part for movement to be made.

保護部材６２を配設した接着フィルム付きウエハ３９は、図８に示すように、他方の面３９ｂを上にし、保護部材６２をチャックテーブル（図示せず）に当接させて載置固定し、研削水を供給しながら研削砥石を駆動して接着層付きウエハ３９の他方の面３９ｂ側を研削する。また、接着フィルム付きウエハ３９は、図８に示すように、表面３９ｂ側から、切削溝形成工程Ｓ４で形成した切削溝６１が露出するまで全面的に均等に研削する。   As shown in FIG. 8, the wafer 39 with an adhesive film provided with the protective member 62 is placed and fixed with the other surface 39b facing up and the protective member 62 in contact with a chuck table (not shown). While supplying the grinding water, the grinding wheel is driven to grind the other surface 39b side of the wafer 39 with the adhesive layer. Further, as shown in FIG. 8, the wafer 39 with the adhesive film is uniformly ground from the surface 39b side until the cutting groove 61 formed in the cutting groove forming step S4 is exposed.

このように、接着フィルム付きウエハ３９の他方の面３９ｂ側を研削することによって、接着フィルム付きウエハ３９を分割し、接着層付きチップ６４と、保護フィルム２４とを備える複数の接着フィルム付きチップ６０を形成する。このように形成された複数の接着フィルム付きチップ６０は、切削溝６１の深さに対応した厚み、すなわち、仕上がり厚みを有する。   Thus, by grinding the other surface 39b side of the wafer 39 with an adhesive film, the wafer 39 with an adhesive film is divided, and a plurality of chips 60 with an adhesive film including the chip 64 with an adhesive layer and the protective film 24 are provided. Form. The plurality of chips 60 with an adhesive film formed in this way have a thickness corresponding to the depth of the cutting groove 61, that is, a finished thickness.

＜１−７．ピックアップ工程＞
ピックアップ工程Ｓ７では、接着フィルム付きチップ６０の保護フィルム２４から、接着層付きチップ６４をピックアップ（剥離）する。 <1-7. Pickup process>
In the pickup step S7, the chip 64 with the adhesive layer is picked up (peeled) from the protective film 24 of the chip 60 with the adhesive film.

例えば、ピックアップ工程Ｓ７では、図９に示すように、まず、接着フィルム付きチップ６０の裏面６０ｂ側を上に向け保護部材６２を下側にし、フレーム２０にダイシングテープ１８を介して貼着載置させる。   For example, in the pick-up process S7, as shown in FIG. 9, first, the back surface 60b side of the chip 60 with the adhesive film is faced up and the protective member 62 is placed on the bottom, and is attached to the frame 20 via the dicing tape 18. Let

続いて、接着フィルム付きチップ６０を図９の矢印の方向に引っ張ることで、複数の接着フィルム付きチップ６０の保護フィルム２４のそれぞれから、接着層付きチップ６４をピックアップする。   Then, the chip | tip 64 with an adhesive layer is picked up from each of the protective film 24 of the chip | tip 60 with several adhesive films by pulling the chip | tip 60 with an adhesive film in the direction of the arrow of FIG.

以上説明したように、本実施の形態に係るウエハのダイシング方法では、分割工程Ｓ６において、保護部材６２を配設した接着フィルム付きウエハ３９の他方の面３９ｂを研削して接着フィルム付きウエハ３９を分割することにより、ウエハ１０をダイシングする際のチッピングを防止することができる。チッピングとは、例えば、研削処理により、チップ上に割れ、欠け、クラック等が入ることをいう。例えば、本実施の形態に係るウエハのダイシング方法では、薄いウエハ（例えば、５０μｍ以下のウエハ）をダイシングする場合においてもチッピングを防止し、ウエハをダイシングする際の加工性を良好にすることができる。   As described above, in the wafer dicing method according to the present embodiment, in the dividing step S6, the other surface 39b of the wafer 39 with the adhesive film on which the protective member 62 is disposed is ground to remove the wafer 39 with the adhesive film. By dividing, chipping during dicing of the wafer 10 can be prevented. Chipping means that cracks, chips, cracks, and the like enter the chip by, for example, grinding. For example, in the wafer dicing method according to the present embodiment, chipping can be prevented even when a thin wafer (for example, a wafer of 50 μm or less) is diced, and the workability when dicing the wafer can be improved. .

また、本実施の形態に係るウエハのダイシング方法では、分割工程Ｓ６において、保護部材６２を配設した接着フィルム付きウエハ３９の他方の面３９ｂを研削して接着フィルム付きウエハ３９を分割するとともに、上述したように、接着層２２と保護フィルム２４との剥離力を所定の値とする。これにより、分割工程Ｓ６において、保護フィルム２４から接着層付きチップ６４が剥がれてしまうことを防止できるため、ウエハをダイシングする際の加工性をより良好にすることができる。   In the wafer dicing method according to the present embodiment, in the dividing step S6, the other surface 39b of the wafer 39 with an adhesive film provided with the protective member 62 is ground to divide the wafer 39 with an adhesive film, As described above, the peeling force between the adhesive layer 22 and the protective film 24 is set to a predetermined value. Thereby, since it can prevent that the chip | tip 64 with an adhesive layer peels from the protective film 24 in division | segmentation process S6, the workability at the time of dicing a wafer can be made more favorable.

さらに、本実施の形態に係るウエハのダイシング方法では、切削溝形成工程Ｓ４において、接着フィルム付きウエハ３９の一方の面３９ａ側から他方の面３９ｂまで達しない深さの切削溝６１を形成する。これにより、分割工程Ｓ６において、ウエハ１０を分割する際の切削屑等の異物のコンタミネーションを防止することができる。すなわち、本実施の形態に係るウエハのダイシング方法では、接着層２２の表面が保護フィルム２４に覆われた状態で、接着フィルム付きチップ６０を製造することができるため、接着層２２の表面に切削屑が付着することを防止できる。したがって、例えば、上述した分割工程Ｓ６において、接着フィルム付きウエハ３９の他方の面３９ｂ側を研削砥石で研削水を供給しながら研削しても、ストリートに沿って形成した各切削溝６１が接着フィルム付きウエハ３９の外周端縁まで達していないので、汚れた研削水が接着フィルム付きウエハ３９の外周端縁から内部に浸透してチップを汚染するおそれがない。   Furthermore, in the wafer dicing method according to the present embodiment, in the cutting groove forming step S4, the cutting groove 61 having a depth that does not reach from the one surface 39a side of the wafer 39 with an adhesive film to the other surface 39b is formed. Thereby, in the dividing step S6, contamination of foreign matters such as cutting waste when the wafer 10 is divided can be prevented. That is, in the wafer dicing method according to the present embodiment, since the chip 60 with the adhesive film can be manufactured in a state where the surface of the adhesive layer 22 is covered with the protective film 24, the surface of the adhesive layer 22 is cut. It is possible to prevent debris from adhering. Therefore, for example, in the above-described dividing step S6, even if the other surface 39b side of the wafer 39 with an adhesive film is ground while supplying grinding water with a grinding stone, the cutting grooves 61 formed along the streets are formed in the adhesive film. Since the outer peripheral edge of the attached wafer 39 is not reached, there is no possibility that the dirty grinding water penetrates into the inside from the outer peripheral edge of the wafer 39 with the adhesive film and contaminates the chip.

＜２．接続方法及び接続構造体＞
図１０に示すように、本実施の形態に係る接続方法は、貼着工程Ｓ１と、撮像工程Ｓ２と、分割位置決定工程Ｓ３と、切削溝形成工程Ｓ４と、保護部材配設工程Ｓ５と、分割工程Ｓ６と、ピックアップ工程Ｓ７と、圧着工程Ｓ８とを有する。なお、貼着工程Ｓ１〜ピックアップ工程Ｓ７は、上述した図１に示す処理と同様であるため、その詳細な説明を省略する。 <2. Connection method and connection structure>
As shown in FIG. 10, the connection method according to the present embodiment includes an attaching step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, a protective member disposing step S5, It has a division step S6, a pickup step S7, and a crimping step S8. In addition, since the sticking process S1-pick-up process S7 is the same as the process shown in FIG. 1 mentioned above, the detailed description is abbreviate | omitted.

＜２−１．圧着工程＞
圧着工程Ｓ８では、ピックアップ工程Ｓ７でピックアップした接着層付きチップ６４を、接着層２２を介して電極７２を有する回路基板７０に圧着し、電極７２と接着層付きチップ６４のバンプ１６とを接続する。 <2-1. Crimping process>
In the crimping step S8, the chip 64 with the adhesive layer picked up in the pickup step S7 is crimped to the circuit board 70 having the electrode 72 via the adhesive layer 22, and the electrode 72 and the bump 16 of the chip 64 with the adhesive layer are connected. .

例えば、圧着工程Ｓ８では、図１１に示すような押圧装置２８を用いて、次の処理を行う。   For example, in the crimping step S8, the following processing is performed using a pressing device 28 as shown in FIG.

まず、回路基板７０上に複数の接着層付きチップ６４を仮搭載する。すなわち、保護フィルム２４が剥離されていることが確認された接着層付きチップ６４を、回路基板７０の表面の所定の位置に配置する。接着層付きチップ６４と回路基板７０とは、両者を押圧したときに、接着層付きチップ６４のバンプ１６と回路基板７０の電極７２とが電気的に接続するように位置合わせされる。   First, a plurality of chips 64 with an adhesive layer are temporarily mounted on the circuit board 70. That is, the chip 64 with the adhesive layer in which it is confirmed that the protective film 24 is peeled is disposed at a predetermined position on the surface of the circuit board 70. The chip 64 with the adhesive layer and the circuit board 70 are aligned so that the bump 16 of the chip 64 with the adhesive layer and the electrode 72 of the circuit board 70 are electrically connected when both are pressed.

続いて、接着層付きチップ６４が配置された回路基板７０を、押圧装置２８のステージ３０の上に載置する。   Subsequently, the circuit board 70 on which the chip 64 with the adhesive layer is disposed is placed on the stage 30 of the pressing device 28.

続いて、ヘッド３２に保持されている押圧部材３６で、接着層付きチップ６４を回路基板７０の表面に押圧する。例えば、ＥＢＳ（Elasticity Bonding System）工法と呼ばれる回路基板全体を弾性体で覆った状態で押圧する方法により、同一基板上に複数仮配置されたチップを一括して圧着する方法が挙げられる。ＥＢＳ工法では、ヘッド３２本体の回路基板と対抗する部分に凹部が設けられたエラストマーからなる圧着部材を用いる。すなわち、ＥＢＳ工法では、プリント基板全体を覆う弾性エラストマーからなる押圧面を有する熱圧着ヘッドにより複数の接着層付きチップを押圧し、複数の接着層付きチップ６４を一括して本圧着させる。これにより、接着層付きチップ６４を、接着層２２を介して回路基板７０の表面に一括して実装することができる。   Subsequently, the chip 64 with an adhesive layer is pressed against the surface of the circuit board 70 by the pressing member 36 held by the head 32. For example, a method called EBS (Elasticity Bonding System) method in which a whole circuit board is pressed in a state of being covered with an elastic body and a plurality of chips temporarily arranged on the same board are collectively pressure-bonded. In the EBS method, a pressure-bonding member made of an elastomer having a recess provided in a portion facing the circuit board of the main body of the head 32 is used. In other words, in the EBS method, a plurality of chips with an adhesive layer are pressed by a thermocompression head having a pressing surface made of an elastic elastomer that covers the entire printed circuit board, and the plurality of chips 64 with an adhesive layer are collectively bonded together. Thereby, the chip | tip 64 with an adhesive layer can be collectively mounted in the surface of the circuit board 70 through the adhesive layer 22. FIG.

このように、本実施の形態に係る接続方法では、図１２に示すように、接着層付きチップ６４のバンプ１６と、回路基板７０の電極７２とが接着層２２を介して接続されてなる接続構造体８０を製造することができる。   As described above, in the connection method according to the present embodiment, as shown in FIG. 12, the bump 16 of the chip 64 with the adhesive layer and the electrode 72 of the circuit board 70 are connected via the adhesive layer 22. The structure 80 can be manufactured.

＜３．他の実施形態＞
上述した分割位置決定工程Ｓ３において、画像処理部５４は、ウエハ１０の機能面の画像からバンプ１６またはアライメントマークの位置を認識して、スクライブライン１４の位置を認識してもよい。 <3. Other embodiments>
In the division position determination step S3 described above, the image processing unit 54 may recognize the position of the scribe line 14 by recognizing the position of the bump 16 or the alignment mark from the functional surface image of the wafer 10.

また、上述した押圧部材３６は弾性体であってよい。これにより、複数の接着層付きチップ６４を回路基板７０の表面に同時に押圧した場合であっても、接着層付きチップ６４と回路基板７０とを良好に接続することができる。   Further, the pressing member 36 described above may be an elastic body. Thereby, even if it is a case where the several chip | tip 64 with an adhesive layer is simultaneously pressed on the surface of the circuit board 70, the chip | tip 64 with an adhesive layer and the circuit board 70 can be connected favorably.

また、上記実施形態では、押圧部材３６にエラストマーなどの弾性体を用いて、複数の接着層付きチップ６４を回路基板７０に一括して実装する場合について説明した。しかし、回路基板７０に接着層付きチップ６４を実装する方法は、これに限定されない。例えば、エラストマーなどの弾性体を用いずに、接着層付きチップ６４を回路基板７０に実装してもよい。また、複数の接着層付きチップ６４を、１つずつ回路基板７０に実装してもよい。   In the above-described embodiment, the case where a plurality of chips 64 with an adhesive layer are collectively mounted on the circuit board 70 using an elastic body such as an elastomer for the pressing member 36 has been described. However, the method of mounting the chip 64 with the adhesive layer on the circuit board 70 is not limited to this. For example, the chip 64 with the adhesive layer may be mounted on the circuit board 70 without using an elastic body such as an elastomer. A plurality of chips 64 with an adhesive layer may be mounted on the circuit board 70 one by one.

また、上記実施形態では、押圧装置２８を用いて、接着フィルム２６をウエハ１０に貼付する場合について説明した。しかし、接着フィルム２６をウエハ１０に貼付する方法は、これに限定されない。例えば、ロールラミネーターを用いて、接着フィルム２６をウエハ１０に貼付してもよい。   In the above embodiment, the case where the adhesive film 26 is attached to the wafer 10 using the pressing device 28 has been described. However, the method for attaching the adhesive film 26 to the wafer 10 is not limited to this. For example, the adhesive film 26 may be attached to the wafer 10 using a roll laminator.

また、押圧部材３６は、上述したＥＢＳのみに限定される訳ではなく、通常の熱圧着ヘッド（セラミックや金属等の硬質ヘッド）や超音波ヘッドの使用を妨げるものではない。   Further, the pressing member 36 is not limited to the above-described EBS, and does not hinder the use of a normal thermocompression bonding head (hard head such as ceramic or metal) or an ultrasonic head.

例えば、図１３に示すように、接着層付きチップ６４を回路基板７０に接着するようにしてもよい。図１３において、図１から図１２までと同一または類似の部分には、図１から図１２までと同一の参照番号を付して、重複する説明を省く場合がある。   For example, as shown in FIG. 13, the chip 64 with the adhesive layer may be bonded to the circuit board 70. In FIG. 13, parts that are the same as or similar to those in FIGS. 1 to 12 are given the same reference numerals as in FIGS. 1 to 12, and redundant descriptions may be omitted.

押圧装置８２は、フリップチップボンディングにより、回路基板７０とチップ２１とを電気的に接続する。押圧装置８２は、ステージ８４と、セラミックツール８６とを備える。押圧装置８２およびステージ８４は、それぞれ、押圧装置２８およびステージ３０と同様の構成を有してよい。   The pressing device 82 electrically connects the circuit board 70 and the chip 21 by flip chip bonding. The pressing device 82 includes a stage 84 and a ceramic tool 86. The pressing device 82 and the stage 84 may have the same configuration as the pressing device 28 and the stage 30, respectively.

セラミックツール８６は、接着層付きチップ６４を回路基板７０に対して押圧する。セラミックツール８６は、複数の接着層付きチップ６４を、１つずつ回路基板７０に対して押圧してよい。セラミックツール８６は、炭化珪素、窒化珪素、窒化アルミニウム等のセラミックを含んでよい。セラミックツール８６は、ヘッドの一例であってよい。セラミックツール８６は、セラミックツール８６を加熱する加熱装置８８を有してよい。加熱装置８８は、セラミックヒータであってよい。   The ceramic tool 86 presses the chip 64 with the adhesive layer against the circuit board 70. The ceramic tool 86 may press the plurality of chips 64 with adhesive layers against the circuit board 70 one by one. The ceramic tool 86 may include a ceramic such as silicon carbide, silicon nitride, aluminum nitride. The ceramic tool 86 may be an example of a head. The ceramic tool 86 may include a heating device 88 that heats the ceramic tool 86. The heating device 88 may be a ceramic heater.

また、接着フィルム付きチップ６０から接着層付きチップ６４を剥離した後、ダイシング装置４０の撮像部４６が、ウエハ１０の表面の画像を撮像してもよい。これにより、画像処理部５４は、ウエハ１０の表面の画像を処理して、接着フィルム付きチップ６０から、接着層付きチップ６４が剥離されているか否かを確認することができる。   Further, after the chip 64 with the adhesive layer is peeled off from the chip 60 with the adhesive film, the imaging unit 46 of the dicing apparatus 40 may capture an image of the surface of the wafer 10. Thereby, the image processing unit 54 can process the image of the surface of the wafer 10 and confirm whether or not the chip 64 with the adhesive layer is peeled from the chip 60 with the adhesive film.

例えば、保護フィルム２４として、波長が４４０ｎｍ以上７００ｎｍ以下の光のうち特定の波長の光を吸収する材料を用いた場合、ウエハ１０の表面の可視光画像における保護フィルム２４が存在する領域は、着色されて見える。これにより、接着フィルム付きチップ６０の保護フィルム２４から、接着層付きチップ６４が剥離されているか否かを確認することができる。画像処理部５４は、接着フィルム付きチップ６０の保護フィルム２４から剥離されている接着層付きチップ６４を選別してよい。   For example, when a material that absorbs light having a specific wavelength among light having a wavelength of 440 nm to 700 nm is used as the protective film 24, the region where the protective film 24 exists in the visible light image on the surface of the wafer 10 is colored. Looks like. Thereby, it can be confirmed whether the chip | tip 64 with an adhesive layer is peeled from the protective film 24 of the chip | tip 60 with an adhesive film. The image processing unit 54 may select the chip 64 with the adhesive layer that has been peeled off from the protective film 24 of the chip 60 with the adhesive film.

また、例えば、接着フィルム付きチップ６０から個々の接着層付きチップ６４を分離するピックアップ装置が、接着フィルム付きチップ６０から接着層付きチップ６４が剥離されているか否かを確認してもよい。   Further, for example, a pickup device that separates each chip 64 with an adhesive layer from the chip 60 with an adhesive film may check whether or not the chip 64 with an adhesive layer is peeled from the chip 60 with an adhesive film.

また、例えば、接着フィルム付きチップ６０から個々の接着層付きチップ６４を分離するピックアップ装置が、接着層付きチップ６４をピックアップする場合、接着フィルム付きチップ６０の保護フィルム２４から接着層付きチップ６４が剥離されていないときには、保護フィルム２４から接着層付きチップ６４が剥離されているときと比較して、ピックアップ装置の先端とダイシングテープ１８との距離がより遠い地点で、ピックアップ装置と接着層付きチップ６４とが接触する。そこで、ピックアップ装置が検出する圧力変化に基づいて、接着フィルム付きチップ６０の保護フィルム２４から接着層付きチップ６４が剥離されているか否かを確認してよい。   For example, when the pickup device that separates the individual chips 64 with the adhesive layer from the chips 60 with the adhesive film picks up the chips 64 with the adhesive layer, the chips 64 with the adhesive layer are removed from the protective film 24 of the chip 60 with the adhesive film. When not peeled off, the tip of the pickup device and the dicing tape 18 are farther away from the tip of the pickup device and the chip with the adhesive layer 18 than when the chip 64 with the adhesive layer is peeled from the protective film 24. 64 comes into contact. Then, based on the pressure change which a pickup apparatus detects, you may confirm whether the chip | tip 64 with an adhesive layer has peeled from the protective film 24 of the chip | tip 60 with an adhesive film.

以下、本発明の具体的な実施例について説明する。なお、下記のいずれかの実施例に本発明の範囲が限定されるものではない。   Hereinafter, specific examples of the present invention will be described. Note that the scope of the present invention is not limited to any of the following examples.

＜接着フィルムの作製＞
接着層として、厚みが３０μｍのＮＣＦを用いた。各接着フィルムの保護フィルムとして、厚さが１００μｍの離型処理方法と厚さの異なるポリエチレンテレフタレートフィルム（以下、「ＰＥＴフィルム」という。）を用いた。 <Preparation of adhesive film>
As the adhesive layer, NCF having a thickness of 30 μm was used. A polyethylene terephthalate film (hereinafter referred to as “PET film”) having a thickness different from that of the mold release treatment method having a thickness of 100 μm was used as a protective film for each adhesive film.

＜バインダーαを用いた接着フィルム＞
バインダーαを用いた接着フィルムは、以下の手順で作製した。まず、フェノキシ樹脂（ＹＰ−５０、東都化成株式会社製）１０質量部、液状エポキシ樹脂（ＥＰ８２８、ジャパンエポキシレジン株式会社製）１０質量部、イミダゾール系潜在性硬化剤（ノバキュア３９４１ＨＰ、旭化成株式会社製）１５質量部、ゴム成分（ＲＫＢ、レジナス化成株式会社製）５質量部及びシランカップリング剤（Ａ−１８７、モメンティブ・パフォーマンス・マテリアルズ社製）１質量部にトルエン１００質量部を加えて攪拌して、均一な樹脂溶液（以下、「バインダーα」という）を調整した。 <Adhesive film using binder α>
The adhesive film using the binder α was produced by the following procedure. First, 10 parts by mass of a phenoxy resin (YP-50, manufactured by Toto Kasei Co., Ltd.), 10 parts by mass of a liquid epoxy resin (EP 828, manufactured by Japan Epoxy Resin Co., Ltd.), an imidazole-based latent curing agent (Novacure 3941HP, manufactured by Asahi Kasei Co., Ltd.) ) 15 parts by mass, 5 parts by mass of a rubber component (RKB, manufactured by Resinas Chemical Co., Ltd.) and 1 part by mass of a silane coupling agent (A-187, manufactured by Momentive Performance Materials), 100 parts by mass of toluene were added and stirred. A uniform resin solution (hereinafter referred to as “binder α”) was prepared.

次に、バーコーターを用いて、各保護フィルムの上に、上記の樹脂溶液を塗布した。樹脂溶液を塗布した保護フィルムを８０℃のオーブンに入れ、溶媒を揮発させて、樹脂溶液を乾燥させることで、接着層であるＮＣＦと保護フィルムであるＰＥＴフィルムとが順次積層されてなる接着フィルムを作製した。   Next, the above resin solution was applied on each protective film using a bar coater. An adhesive film in which an NCF as an adhesive layer and a PET film as a protective film are sequentially laminated by putting the protective film coated with the resin solution in an oven at 80 ° C., volatilizing the solvent, and drying the resin solution. Was made.

＜バインダーβを用いた接着フィルム＞
バインダーβを用いた接着フィルムは、バインダーαの組成に無機フィラー（不定形シリカ 平均粒径０．５μｍ アドマテックス社製）を１００質量部加えたもの（以下、「バインダーβ」という）を用いたこと以外は、バインダーαを用いた接着フィルムと同様に作製した。 <Adhesive film using binder β>
As the adhesive film using binder β, a composition in which 100 parts by mass of an inorganic filler (amorphous silica having an average particle size of 0.5 μm manufactured by Admatechs) was added to the composition of binder α (hereinafter referred to as “binder β”) was used. Except this, it was produced in the same manner as the adhesive film using the binder α.

接着フィルムにおいて、接着層と保護フィルムとの剥離力は、保護フィルムの上に接着層を塗布する前に、保護フィルムの表面に離型処理を施すことで調整した。離型処理は、シリコーン系の剥離剤を保護フィルムの表面に塗布した後、保護フィルムを加熱して、保護フィルムを乾燥させることで実施した。シリコーン系の剥離剤の配合を調整することで、接着層と保護フィルムとの剥離力が異なる表１に示す実施例１〜実施例１０及び表２に示す比較例１〜比較例３の接着フィルムを作製した。   In the adhesive film, the peeling force between the adhesive layer and the protective film was adjusted by applying a release treatment to the surface of the protective film before applying the adhesive layer on the protective film. The mold release treatment was performed by applying a silicone release agent to the surface of the protective film, and then heating the protective film to dry the protective film. The adhesive films of Examples 1 to 10 shown in Table 1 and Comparative Examples 1 to 3 shown in Table 2 differing in the peeling force between the adhesive layer and the protective film by adjusting the formulation of the silicone release agent Was made.

Figure 2011253940
Figure 2011253940

Figure 2011253940
Figure 2011253940

＜透過率について＞
接着フィルムの透過率は、ＣＭ−３６００ｄ（コニカミノルタ株式会社製）を用いて、全光線透過率を測定した。接着フィルムの透過率は、以下の手順で算出した。まず、接着フィルムの接着層とガラス基板とが対向するように各接着フィルムをガラス基板の上に貼り付けて、測定試料を準備した。ガラス基板の厚さは１．１ｍｍであった。次に、ガラス基板単体の全光線透過率を測定した。測定は、透過させる光の波長を３６０ｎｍから７４０ｎｍまで連続的に変化させて実施した。次に、準備した測定試料のそれぞれについても同様に、全光線透過率を測定した。ガラス基板単体の全光線透過率を１００％として、各接着フィルムの透過率を算出した。 <About transmittance>
The transmittance | permeability of the adhesive film measured total light transmittance using CM-3600d (made by Konica Minolta Co., Ltd.). The transmittance of the adhesive film was calculated according to the following procedure. First, each adhesive film was affixed on the glass substrate so that the adhesive layer of the adhesive film and the glass substrate faced to prepare a measurement sample. The thickness of the glass substrate was 1.1 mm. Next, the total light transmittance of the glass substrate alone was measured. The measurement was performed by continuously changing the wavelength of light to be transmitted from 360 nm to 740 nm. Next, the total light transmittance was similarly measured for each of the prepared measurement samples. The transmittance of each adhesive film was calculated with the total light transmittance of the glass substrate alone as 100%.

＜保護フィルムの厚みについて＞
表１及び表２に示す保護フィルムの厚みは、マイクロメーター（ミツトヨ株式会社製）を用いて測定した。
＜接着フィルムに対する保護フィルムの剥離力＞ <About the thickness of the protective film>
The thickness of the protective film shown in Table 1 and Table 2 was measured using a micrometer (manufactured by Mitutoyo Corporation).
<Peeling force of protective film against adhesive film>

表１及び表２に示す接着フィルムに対する保護フィルムの剥離力は、テンシロン（株式会社オリエンテック製）を用いて測定した。引張方向は、１８０度方向した。引張方法は、Ｔ型剥離とした。引張速度は、毎分３００ｍｍに設定した。測定は、温度２３±２℃、湿度５５±１０％ＲＨの条件で実施した。   The peeling force of the protective film with respect to the adhesive film shown in Table 1 and Table 2 was measured using Tensilon (made by Orientec Co., Ltd.). The tensile direction was 180 degrees. The tensile method was T-type peeling. The tensile speed was set at 300 mm per minute. The measurement was performed under conditions of a temperature of 23 ± 2 ° C. and a humidity of 55 ± 10% RH.

＜ダイシング試験について＞
実施例１〜実施例１０では、ダイシング試験として、図１に示す各工程の処理、すなわち、接着層付きウエハに切削溝を形成した後に研削処理を行った。 <About dicing test>
In Examples 1 to 10, as a dicing test, the process of each step shown in FIG. 1, that is, the grinding process was performed after forming the cutting groove on the wafer with the adhesive layer.

シリコンウエハは、直径が６インチであり、厚さが７００μｍであった。また、シリコンウエハに形成されているバンプは、高さが２５μｍであった。   The silicon wafer had a diameter of 6 inches and a thickness of 700 μm. Further, the bump formed on the silicon wafer had a height of 25 μm.

切削溝形成工程Ｓ４では、ダイシング装置（ＤＦＤ−６５１）により、接着フィルム付きウエハに、接着フィルム付きウエハの一方の面側から他方の面まで達しない深さの切削溝を形成した。ブレードは、ＮＢＣ−ＺＢ２０３０−０．０４ｔ（株式会社ディスコ製）を用いた。ブレードの厚さは、４０μｍであった。ブレードの回転数は３００００ｒｐｍに設定した。ブレードの送り速度は１０ｍｍ／ｓｅｃに設定した。   In the cutting groove forming step S4, a cutting groove having a depth that does not reach the other surface from the one surface side of the wafer with the adhesive film was formed on the wafer with the adhesive film by the dicing apparatus (DFD-651). As the blade, NBC-ZB2030-0.04t (manufactured by DISCO Corporation) was used. The thickness of the blade was 40 μm. The rotation speed of the blade was set to 30000 rpm. The blade feed speed was set to 10 mm / sec.

分割工程Ｓ６では、研削装置（ＤＦＤ−８５４０ 株式会社ディスコ製）を用いて、接着フィルム付きウエハのそれぞれを６．３ｍｍ×６．３ｍｍの接着フィルム付きチップに分割した。加工条件は、粗削り切削速度を０．４μｍ／ｓｅｃとし、仕上げ切削速度を０．３μｍ／ｓｅｃとした。研削後のウエハの厚みは、２００μｍとした。以下、実施例１〜実施例１０で行った処理を「ダイシング工程Ａ」という。   In the dividing step S6, each of the wafers with an adhesive film was divided into 6.3 mm × 6.3 mm chips with an adhesive film using a grinding apparatus (DFD-8540, manufactured by DISCO Corporation). The machining conditions were a rough cutting speed of 0.4 μm / sec and a final cutting speed of 0.3 μm / sec. The thickness of the wafer after grinding was 200 μm. Hereinafter, the processing performed in Examples 1 to 10 is referred to as “dicing step A”.

比較例１では、図１に示す切削溝形成工程Ｓ４において、接着フィルム付きウエハに、接着フィルム付きウエハの一方の面側から他方の面まで達する深さの切削溝を形成したこと以外は、実施例１〜実施例１０と同様にダイシング試験を行った。以下、比較例１で行った処理を「ダイシング工程Ｂ」という。   In Comparative Example 1, the cutting groove forming step S4 shown in FIG. 1 was performed except that a cutting groove having a depth reaching from the one surface side of the wafer with the adhesive film to the other surface was formed on the wafer with the adhesive film. A dicing test was conducted in the same manner as in Examples 1 to 10. Hereinafter, the process performed in Comparative Example 1 is referred to as “dicing process B”.

比較例２では、図１に示す分割工程Ｓ６においてウエハの厚みが２００μｍとなるように研削処理を行った後に、切削溝形成工程Ｓ４において接着フィルム付きウエハに、接着フィルム付きウエハの一方の面側から他方の面まで達する深さの切削溝を形成したこと以外は、実施例１〜実施例１０と同様にダイシング試験を行った。以下、比較例２で行った処理を「ダイシング工程Ｃ」という。   In Comparative Example 2, after performing the grinding process so that the thickness of the wafer becomes 200 μm in the dividing step S6 shown in FIG. 1, one side of the wafer with the adhesive film is formed on the wafer with the adhesive film in the cutting groove forming step S4. A dicing test was performed in the same manner as in Examples 1 to 10 except that a cutting groove having a depth reaching the other surface was formed. Hereinafter, the processing performed in Comparative Example 2 is referred to as “dicing step C”.

比較例３では、図１に示す分割工程Ｓ６を行わずに、貼着工程Ｓ１においてウエハの厚みが２００μｍとなるように研削処理を行った後にウエハに接着フィルムを貼り合わせたこと以外は、比較例２と同様にダイシング試験を行った。以下、比較例３で行った処理を「ダイシング工程Ｄ」という。   In Comparative Example 3, the comparison was performed except that the dividing step S6 shown in FIG. 1 was not performed, and the adhesive film was bonded to the wafer after the grinding process was performed so that the thickness of the wafer became 200 μm in the bonding step S1. A dicing test was conducted in the same manner as in Example 2. Hereinafter, the process performed in Comparative Example 3 is referred to as “dicing step D”.

＜パターン認識性評価について＞
パターンの視認性は、ＤＦＤ−６５１（株式会社ディスコ製）に搭載されたＣＣＤカメラでシリコンウエハの表面に形成されたパターンを観察した。パターンの線幅は３０μｍであった。 <About pattern recognition evaluation>
Regarding the visibility of the pattern, the pattern formed on the surface of the silicon wafer was observed with a CCD camera mounted on DFD-651 (manufactured by DISCO Corporation). The line width of the pattern was 30 μm.

表１及び表２において、パターン認識性が「○」とは、装置認識スコアが８０以上である、すなわち、パターン認識性が良好であることを示す。また、パターン認識性が「△」とは、装置認識スコアが８０未満である、すなわち、パターン認識性が良好ではないことを示す。   In Tables 1 and 2, a pattern recognition property of “◯” indicates that the device recognition score is 80 or more, that is, the pattern recognition property is good. The pattern recognition property “Δ” indicates that the device recognition score is less than 80, that is, the pattern recognition property is not good.

＜加工性について＞
加工性は、図１に示す分割工程Ｓ６における研削処理時のチップ飛びやチップのズレ及び研削処理後のチッピングの程度を観察することにより評価した。 <About workability>
The workability was evaluated by observing the degree of chip fly and chip deviation during the grinding process and chipping after the grinding process in the dividing step S6 shown in FIG.

表１及び表２において、加工性が「◎」とは、チップ飛び・ズレ無しであってチッピングなし（１０点平均中不良なし）であることを示す。加工性が「○」とは、チップ飛び・ズレが無しであって、チッピングが小（１０点平均中、不良が１０％未満）であることを示す。加工性が「△」とは、一部にズレ（１０点平均中、不良が３０％未満）があることを示す。加工性が「×」とは、チッピングが多い（１０点平均中、不良が５０％以上）ことを示す。   In Tables 1 and 2, the workability “◎” indicates that there is no chip jumping / displacement and no chipping (no 10 point average failure). A workability of “◯” indicates that there is no chip skipping / displacement and chipping is small (the average of 10 points is less than 10% defective). A workability of “Δ” indicates that there is some deviation (average of 10 points, with a defect of less than 30%). The workability “x” indicates that there is much chipping (the average of 10 points is 50% or more defective).

＜実施例及び比較例の評価結果について＞
表１に示すように、実施例１〜実施例１０では、加工性、カバーフィルム剥離性及び接続信頼性が良好であった。特に、実施例２及び実施例３では、加工性が他の実施例と比較して、より良好であった。 <About the evaluation result of an Example and a comparative example>
As shown in Table 1, in Examples 1 to 10, workability, cover film peelability, and connection reliability were good. In particular, in Example 2 and Example 3, the workability was better compared to other examples.

一方、表２に示すように、比較例１では、図１に示す切削溝形成工程Ｓ４において、接着フィルム付きウエハに、接着フィルム付きウエハの一方の面側から他方の面まで達しない深さの切削溝を形成せず、上述したダイシング工程Ｂを行ったため、加工性が良好ではなかった。   On the other hand, as shown in Table 2, in the comparative example 1, in the cutting groove forming step S4 shown in FIG. 1, the wafer with the adhesive film has a depth that does not reach the other surface from the one surface side of the wafer with the adhesive film. Since the above-mentioned dicing process B was performed without forming the cutting groove, the workability was not good.

また、表２に示すように、比較例２では、図１に示す切削溝形成工程Ｓ４において、接着フィルム付きウエハに、接着フィルム付きウエハの一方の面側から他方の面まで達しない深さの切削溝を形成せず、上述したダイシング工程Ｃを行ったため、加工性が良好ではなかった。   Moreover, as shown in Table 2, in the comparative example 2, in the cutting groove forming step S4 shown in FIG. 1, the depth with which the wafer with the adhesive film does not reach the other surface from the one surface side of the wafer with the adhesive film. Since the above-described dicing step C was performed without forming the cutting groove, the workability was not good.

また、表２に示すように、比較例３では、図１に示す切削溝形成工程Ｓ４において、接着フィルム付きウエハに、接着フィルム付きウエハの一方の面側から他方の面まで達しない深さの切削溝を形成せず、上述したダイシング工程Ｄを行ったため、加工性が良好ではなかった。   Moreover, as shown in Table 2, in the comparative example 3, in the cutting groove forming step S4 shown in FIG. 1, the depth with which the wafer with the adhesive film does not reach the other surface from the one surface side of the wafer with the adhesive film. Since the above-mentioned dicing process D was performed without forming the cutting groove, the workability was not good.

１０ ウエハ、１２ 治具、１４ スクライブライン、１６ バンプ、１８ ダイシングテープ、２０ フレーム、２１ チップ、２２ 接着層、２４ 保護フィルム、２６ 接着フィルム、２８ 押圧装置、３０ ステージ、３２ ヘッド、３４ 加熱装置、３６ 押圧部材、３８ 保持部、３９ 接着フィルム付きウエハ、４０ ダイシング装置、４２ チャックテーブル、４４ アライメントステージ、４６ 撮像部、４８ 切削部、５０ ブレード、５２ 制御部、５４ 画像処理部、５６ 駆動部、６０ 接着フィルム付きチップ、６１ 切削溝、６２ 保護部材、６４ 接着層付きチップ、７０ 回路基板、７２ 電極、８０ 接続構造体、８２ 押圧装置、８４ ステージ、８６ セラミックツール、８８ 加熱装置   10 wafers, 12 jigs, 14 scribe lines, 16 bumps, 18 dicing tape, 20 frames, 21 chips, 22 adhesive layers, 24 protective films, 26 adhesive films, 28 pressing devices, 30 stages, 32 heads, 34 heating devices, 36 pressing member, 38 holding unit, 39 wafer with adhesive film, 40 dicing apparatus, 42 chuck table, 44 alignment stage, 46 imaging unit, 48 cutting unit, 50 blade, 52 control unit, 54 image processing unit, 56 drive unit, 60 Chip with adhesive film, 61 Cutting groove, 62 Protection member, 64 Chip with adhesive layer, 70 Circuit board, 72 Electrode, 80 Connection structure, 82 Pressing device, 84 Stage, 86 Ceramic tool, 88 Heating device

Claims (10)

一方の面に回路パターンを有するウエハの該一方の面に、接着層と透過性を有する保護フィルムとが順次積層されてなる接着フィルム付きウエハの他方の面をダイシングテープに貼着する貼着工程と、
前記接着フィルム付きウエハの一方の面で反射して前記接着層及び前記保護フィルムを透過した光を受光することにより、該接着フィルム付きウエハにおける前記ウエハの一方の面の画像を撮像する撮像工程と、
前記撮像工程で撮像した画像に基づいて、前記接着フィルム付きウエハを分割する位置を決定する分割位置決定工程と、
前記分割位置決定工程で決定した位置に基づいて、前記接着フィルム付きウエハに、該接着フィルム付きウエハの一方の面側から他方の面まで達しない深さの切削溝を形成する切削溝形成工程と、
前記切削溝が形成された接着フィルム付きウエハの前記保護フィルムの表面に、保護部材を配設する保護部材配設工程と、
前記保護部材を配設した接着フィルム付きウエハの他方の面を研削して該接着フィルム付きウエハを分割することにより、一方の面に前記回路パターンを有するチップの一方の面に前記接着層が積層された接着層付きチップと、前記保護フィルムとを備える複数の接着フィルム付きチップを形成する分割工程と、
前記接着フィルム付きチップから、前記接着層付きチップをピックアップするピックアップ工程と
を有するウエハのダイシング方法。 An adhering step of adhering the other surface of the wafer with an adhesive film in which an adhesive layer and a transparent protective film are sequentially laminated on the one surface of the wafer having a circuit pattern on one surface to a dicing tape When,
An imaging step of capturing an image of one surface of the wafer in the wafer with an adhesive film by receiving light reflected from one surface of the wafer with the adhesive film and transmitted through the adhesive layer and the protective film; ,
A division position determination step for determining a position to divide the wafer with an adhesive film based on the image captured in the imaging step;
A cutting groove forming step of forming, on the wafer with an adhesive film, a cutting groove having a depth that does not reach from the one surface side of the wafer with the adhesive film to the other surface based on the position determined in the division position determining step; ,
A protective member disposing step of disposing a protective member on the surface of the protective film of the wafer with the adhesive film in which the cutting grooves are formed;
By grinding the other surface of the wafer with an adhesive film provided with the protective member and dividing the wafer with the adhesive film, the adhesive layer is laminated on one surface of the chip having the circuit pattern on one surface. A dividing step of forming a plurality of chips with an adhesive film comprising the chip with an adhesive layer and the protective film;
A pick-up process for picking up the chip with the adhesive layer from the chip with the adhesive film. 前記接着層と前記保護フィルムとが順次積層されてなる接着フィルムは、波長が４４０〜７００ｎｍの光の透過率が７４％以上である請求項１記載のウエハのダイシング方法。   2. The wafer dicing method according to claim 1, wherein the adhesive film formed by sequentially laminating the adhesive layer and the protective film has a light transmittance of 74% or more at a wavelength of 440 to 700 nm. 前記保護フィルムと前記接着層との剥離力は、０．１７Ｎ／５ｃｍ以上である請求項１又は２記載のウエハのダイシング方法。   The wafer dicing method according to claim 1, wherein a peeling force between the protective film and the adhesive layer is 0.17 N / 5 cm or more. 前記保護フィルムの厚さは、５０〜１００μｍである請求項１乃至３のうちいずれか１項記載のウエハのダイシング方法。   The wafer dicing method according to claim 1, wherein the protective film has a thickness of 50 to 100 μm. 前記接着層と前記保護フィルムとが順次積層されてなる接着フィルムは、ＮＣＦ又はＡＣＦを含む請求項１乃至４のうちいずれか１項記載のウエハのダイシング方法。   The wafer dicing method according to claim 1, wherein the adhesive film in which the adhesive layer and the protective film are sequentially laminated includes NCF or ACF. 請求項１乃至５のうちいずれか１項記載のウエハのダイシング方法でピックアップした接着層付きチップを、前記接着層を介して電極を有する回路基板に圧着し、該電極と該接着層付きチップの前記回路パターンとを接続する圧着工程を有する接続方法。   A chip with an adhesive layer picked up by the wafer dicing method according to any one of claims 1 to 5 is pressure-bonded to a circuit board having an electrode through the adhesive layer, and the electrode and the chip with the adhesive layer are bonded. A connection method including a crimping step of connecting the circuit pattern. 前記接着層が、ＮＣＦまたはＡＣＦである請求項６記載の接続方法。   The connection method according to claim 6, wherein the adhesive layer is NCF or ACF. 前記圧着工程は、ヘッドに保持されている弾性体で、前記接着層付きチップを前記回路基板の表面に押圧する押圧段階を有する請求項６又は７記載の接続方法。   The connection method according to claim 6 or 7, wherein the crimping step includes a pressing step of pressing the chip with the adhesive layer against the surface of the circuit board with an elastic body held by a head. 前記押圧段階は、前記弾性体で、複数の前記接着層付きチップを前記回路基板の表面に同時に押圧する段階を有する請求項８記載の接続方法。   The connection method according to claim 8, wherein the pressing step includes a step of simultaneously pressing the plurality of chips with the adhesive layer against the surface of the circuit board with the elastic body. 請求項６乃至９のうちいずれか１項記載の接続方法により得られる接続構造体。   A connection structure obtained by the connection method according to claim 6.
JP2010126919A 2010-06-02 2010-06-02 Wafer dicing method, connecting method, and connecting structure Pending JP2011253940A (en)

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