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JP2011151276A - Photoelectric converter and photoelectric conversion module - Google Patents

Photoelectric converter and photoelectric conversion module Download PDF

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JP2011151276A
JP2011151276A JP2010012648A JP2010012648A JP2011151276A JP 2011151276 A JP2011151276 A JP 2011151276A JP 2010012648 A JP2010012648 A JP 2010012648A JP 2010012648 A JP2010012648 A JP 2010012648A JP 2011151276 A JP2011151276 A JP 2011151276A
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photoelectric conversion
mounting substrate
element mounting
conversion device
frame
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Kazuhiro Kawabata
和弘 川畑
Yoshiaki Ueda
義明 植田
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Kyocera Corp
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    • Y02E10/52PV systems with concentrators

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Abstract

【課題】本発明は、放熱性に優れた光電変換装置及び光電電変換モジュールを提供することを目的とする。
【解決手段】光電変換装置2であって、素子搭載基板5と、素子搭載基板5の上面の中央領域に設けられる光電変換素子7と、素子搭載基板5の上面に設けられ、光電変換素子7を取り囲むとともに、下部が中央領域から中央領域の外周に位置する周辺領域に向かって延在して素子搭載基板5の上面と接合される枠体10と、枠体10の上部と接合されるとともに、光電変換素子7と重なる領域に設けられる集光部材9と、素子搭載基板5の下面に設けられ、平面透視して枠体10と重なる領域に設けられる導電性部材11と、を備え、枠体10と導電性部材11の熱膨張係数が、素子搭載基板5の熱膨張係数よりも大きいことを特徴とする光電変換装置。
【選択図】図3
An object of the present invention is to provide a photoelectric conversion device and a photoelectric conversion module that are excellent in heat dissipation.
A photoelectric conversion device includes an element mounting substrate, a photoelectric conversion element provided in a central region of the upper surface of the element mounting substrate, and a photoelectric conversion element provided on the upper surface of the element mounting substrate. And the lower part extends from the central region toward the peripheral region located on the outer periphery of the central region and is joined to the upper surface of the element mounting substrate 5 and is joined to the upper part of the frame 10. A condensing member 9 provided in a region overlapping with the photoelectric conversion element 7 and a conductive member 11 provided in a lower surface of the element mounting substrate 5 and provided in a region overlapping the frame body 10 in a plan view. The photoelectric conversion device, wherein the thermal expansion coefficient of the body 10 and the conductive member 11 is larger than the thermal expansion coefficient of the element mounting substrate 5.
[Selection] Figure 3

Description

本発明は、光電変換装置及びその光電変換装置を用いる光電変換モジュールに関する。   The present invention relates to a photoelectric conversion device and a photoelectric conversion module using the photoelectric conversion device.

近年、光電変換素子を有する光電変換装置の開発が進められている。例示的な光電変換装置としては、太陽エネルギーを電力に変換する太陽電池装置がある。特に、発電効率の向上を目的として、集光型の太陽電池装置の開発が進められている。この太陽電池装置の場合、光電変換素子は、太陽エネルギーを電力に変換する太陽電池素子である。集光された太陽光を効率良く太陽電池素子に照射する構造が、例えば、特許文献1に、開示されている。   In recent years, development of a photoelectric conversion device having a photoelectric conversion element has been advanced. As an exemplary photoelectric conversion device, there is a solar cell device that converts solar energy into electric power. In particular, for the purpose of improving the power generation efficiency, a concentrating solar cell device is being developed. In the case of this solar cell device, the photoelectric conversion element is a solar cell element that converts solar energy into electric power. For example, Patent Document 1 discloses a structure for efficiently irradiating condensed solar light onto a solar cell element.

特開2009−147155号公報JP 2009-147155 A

ところで、太陽電池装置の構造では、太陽電池セルが実装された基板の熱を効率良く放熱する技術が開発されている。   By the way, in the structure of the solar cell device, a technology for efficiently radiating the heat of the substrate on which the solar cells are mounted has been developed.

本発明は、上記課題に鑑みてなされたものであり、放熱性に優れた光電変換装置及び光電変換モジュールを提供することを目的とする。   This invention is made | formed in view of the said subject, and it aims at providing the photoelectric conversion apparatus and photoelectric conversion module excellent in heat dissipation.

上記課題を解決するために、本発明に係る光電変換装置は、素子搭載基板と、光電変換素子と、枠体と、集光部材と、導電性部材と、を備え、前記枠体と前記導電性部材の熱膨張係数が、前記素子搭載基板の熱膨張係数よりも大きいことを特徴とする。前記光電変換素子は、前記素子搭載基板の上面の中央領域に設けられている。前記枠体は、前記素子搭載基板の上面に設けられ、前記光電変換素子を取り囲むとともに、下部が前記中央領域から前記中央領域の外周に位置する周辺領域に向かって延在して前記素子搭載基板の上面と接合されている。前記集光部材は、前記枠体の上部と接合されるとともに、前記光電変換素子と重なる領域に設けられている。前記導電性部材は、前記素子搭載基板の下面に設けられ、平面透視して前記枠体と重なる領域に設けられている。   In order to solve the above problems, a photoelectric conversion device according to the present invention includes an element mounting substrate, a photoelectric conversion element, a frame, a light collecting member, and a conductive member, and the frame and the conductive member. The thermal expansion coefficient of the conductive member is larger than the thermal expansion coefficient of the element mounting substrate. The photoelectric conversion element is provided in a central region on the upper surface of the element mounting substrate. The frame body is provided on an upper surface of the element mounting substrate, surrounds the photoelectric conversion element, and a lower portion extends from the central region toward a peripheral region located on an outer periphery of the central region, and the element mounting substrate. It is joined to the upper surface of. The condensing member is joined to the upper part of the frame and is provided in a region overlapping the photoelectric conversion element. The conductive member is provided on a lower surface of the element mounting substrate, and is provided in a region overlapping the frame body as seen through a plane.

また、本発明に係る光電変換モジュールは、前記光電変換装置と、前記光電変換装置上に設けられ、前記集光部材に光を集める受光部材と、を備えたことを特徴とする。   The photoelectric conversion module according to the present invention includes the photoelectric conversion device and a light receiving member that is provided on the photoelectric conversion device and collects light on the light collecting member.

本発明は、放熱性に優れた光電変換装置及び光電変換モジュールを提供することができる。   The present invention can provide a photoelectric conversion device and a photoelectric conversion module excellent in heat dissipation.

本実施形態に係る光電変換モジュールの概観を示す分解斜視図である。It is a disassembled perspective view which shows the external appearance of the photoelectric conversion module which concerns on this embodiment. 本実施形態に係る光電変換装置の概観斜視図である。It is an outline perspective view of a photoelectric conversion device concerning this embodiment. 図2に示す光電変換装置をA−A線で切断したときの断面図である。It is sectional drawing when the photoelectric conversion apparatus shown in FIG. 2 is cut | disconnected by the AA line. 本実施形態の変形例1に係る光電変換装置の概観斜視図である。It is a general-view perspective view of the photoelectric conversion apparatus which concerns on the modification 1 of this embodiment. 図4に示す光電変換装置をB−B線で切断したときの断面図である。It is sectional drawing when the photoelectric conversion apparatus shown in FIG. 4 is cut | disconnected by the BB line. 本実施形態の変形例2に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 2 of this embodiment. 本実施形態の変形例3に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 3 of this embodiment. 本実施形態の変形例4に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 4 of this embodiment. 本実施形態の変形例5に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 5 of this embodiment. 本実施形態の変形例6に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 6 of this embodiment. 本実施形態に係る光電変換モジュールの概観斜視図である。It is an outline perspective view of the photoelectric conversion module concerning this embodiment.

以下、本発明の一実施形態に係る光電変換装置及び光電変換モジュールについて、図面を参照しながら説明する。   Hereinafter, a photoelectric conversion device and a photoelectric conversion module according to an embodiment of the present invention will be described with reference to the drawings.

<実施形態>
<光電変換モジュール及び光電変換装置の構成>
本実施形態に係る光電変換モジュール1は、太陽光エネルギーを電力に変換する太陽光発電モジュールである。また、本実施形態に係る光電変換装置2は、光エネルギーを電力に変換する光電変換素子5を含んでいる。かかる光電変換素子7は、例えば、太陽光エネルギーを電力に変換する機能を備えている太陽電池素子である。
<Embodiment>
<Configuration of photoelectric conversion module and photoelectric conversion device>
The photoelectric conversion module 1 according to the present embodiment is a solar power generation module that converts solar energy into electric power. The photoelectric conversion device 2 according to the present embodiment includes a photoelectric conversion element 5 that converts light energy into electric power. For example, the photoelectric conversion element 7 is a solar cell element having a function of converting solar energy into electric power.

光電変換モジュール1は、複数の光電変換装置2と、複数の光電変換装置2の上方に設けられた受光部材3と外部基板4を含んで構成される。受光部材3は、外部からの光を受光するとともに、受光した光を集光部材9に集める機能を備えている。また、受光部材3は、複数個のレンズ部材3bが矩形のフレーム部材3aに固定されることにより構成されている。受光部材3のレンズ部材3bは、例えば、ドーム状のフレネルレンズであり、例えば、アクリル樹脂等の光学的特性に優れた樹脂材料からなる。複数の光電変換装置2は、外部基板4に固定されている。そして、受光部材3は、外部基板4に固定された複数の光電変換装置2を覆っている。   The photoelectric conversion module 1 includes a plurality of photoelectric conversion devices 2, a light receiving member 3 and an external substrate 4 provided above the plurality of photoelectric conversion devices 2. The light receiving member 3 has a function of receiving light from the outside and collecting the received light on the light collecting member 9. The light receiving member 3 is configured by fixing a plurality of lens members 3b to a rectangular frame member 3a. The lens member 3b of the light receiving member 3 is, for example, a dome-shaped Fresnel lens, and is made of a resin material having excellent optical characteristics such as acrylic resin. The plurality of photoelectric conversion devices 2 are fixed to the external substrate 4. The light receiving member 3 covers the plurality of photoelectric conversion devices 2 fixed to the external substrate 4.

受光部材3に入射された光は、光電変換装置2の集光部材9の上端部に集められる。すなわち、集光部材9は、受光部材3によって集められた光を光電変換素子7に導く機能を備えている。集光部材9に入射された光は、集光部材9の下端部から光電変換素子7の上面の受光面8に入射される。そして、光電変換素子7は、光エネルギーを電力に変換する。外部基板4は、光電変換装置2から発せられる熱を放散させる機能を備えている。外部基板4は、例えば、アルミニウム、銅、炭素−金属複合材等の金属材料からなる。なお、外部基板4の熱伝導率は、例えば、100(W/m・K)以上500(W/m・K)以下に設定されている。   The light incident on the light receiving member 3 is collected at the upper end of the light collecting member 9 of the photoelectric conversion device 2. That is, the condensing member 9 has a function of guiding the light collected by the light receiving member 3 to the photoelectric conversion element 7. The light incident on the light collecting member 9 enters the light receiving surface 8 on the upper surface of the photoelectric conversion element 7 from the lower end of the light collecting member 9. The photoelectric conversion element 7 converts light energy into electric power. The external substrate 4 has a function to dissipate heat generated from the photoelectric conversion device 2. The external substrate 4 is made of a metal material such as aluminum, copper, or a carbon-metal composite material. The thermal conductivity of the external substrate 4 is set to, for example, 100 (W / m · K) or more and 500 (W / m · K) or less.

光電変換装置2は、図3に示すように、素子搭載基板5と、素子搭載基板5の上面の中央領域に設けられる光電変換素子7と、素子搭載基板5の上面に設けられ、光電変換素子7を取り囲むとともに、下部が中央領域から中央領域の外周に位置する周辺領域に向かって延在して素子搭載基板5の上面と接合される枠体10と、枠体10の上部と接合されるとともに、光電変換素子7と重なる領域に設けられる集光部材9と、素子搭載基板5の下面に設けられ、平面透視して枠体10と重なる領域に設けられる導電性部材11と、を備えている。   As shown in FIG. 3, the photoelectric conversion device 2 is provided on the element mounting substrate 5, the photoelectric conversion element 7 provided in the central region of the upper surface of the element mounting substrate 5, and the upper surface of the element mounting substrate 5. 7, a lower portion extends from the central region toward a peripheral region located on the outer periphery of the central region, and is joined to the upper surface of the element mounting substrate 5, and is joined to the upper portion of the frame 10. And a condensing member 9 provided in a region overlapping with the photoelectric conversion element 7 and a conductive member 11 provided on a lower surface of the element mounting substrate 5 and provided in a region overlapping the frame body 10 in a plan view. Yes.

素子搭載基板5は、平面透視したとき、矩形状に形成された部材である。素子搭載基板5は、絶縁性の材料からなり、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体又はガラスセラミック等のセラミックス材料からなる。または、素子搭載基板5は、これらの材料のうちの複数の材料を混合した複合系からなる。また、素子搭載基板5の厚みは、例えば、0.05mm以上1.0mm以下に設定されている。   The element mounting substrate 5 is a member formed in a rectangular shape when seen through the plane. The element mounting substrate 5 is made of an insulating material, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or glass. Made of ceramic material such as ceramic. Alternatively, the element mounting substrate 5 is composed of a composite system obtained by mixing a plurality of these materials. Moreover, the thickness of the element mounting substrate 5 is set to 0.05 mm or more and 1.0 mm or less, for example.

また、素子搭載基板5の熱伝導率は、例えば、15(W/m・K)以上250(W/m・K)以下に設定されている。また、素子搭載基板5の熱膨張係数は、5(ppm/℃)以上10(ppm/℃)以下に設定されている。なお、平面透視したときの素子搭載基板5の形状は、矩形状に限らず、円形状等の形状にすることができる。   The thermal conductivity of the element mounting substrate 5 is set to 15 (W / m · K) or more and 250 (W / m · K) or less, for example. The coefficient of thermal expansion of the element mounting substrate 5 is set to 5 (ppm / ° C.) or more and 10 (ppm / ° C.) or less. In addition, the shape of the element mounting substrate 5 when seen in a plan view is not limited to a rectangular shape, and may be a circular shape or the like.

また、素子搭載基板5は、図3に示すように、光電変換素子7と導電性部材11に電気的に接続される導電層6が設けられている。すなわち、光電変換素子7と電気的に接続される導電層6が、素子搭載基板5の上面の中央領域に設けられている。また、光電変換素子7及び導電性部材11と電気的に接続される導電層6が、素子搭載基板5の内部のビア部に設けられている。導電層6は、例えば、銅、銀、金、鉄、アルミニウム、ニッケル、コバルト、クロム、タングステン、モリブデン又はマンガン等の金属材料、或いはそれらの合金からなる。例えば、スクリーン印刷法によるメタライズ形成技術を用いて形成される。   Further, as shown in FIG. 3, the element mounting substrate 5 is provided with a conductive layer 6 that is electrically connected to the photoelectric conversion element 7 and the conductive member 11. That is, the conductive layer 6 electrically connected to the photoelectric conversion element 7 is provided in the central region on the upper surface of the element mounting substrate 5. In addition, a conductive layer 6 that is electrically connected to the photoelectric conversion element 7 and the conductive member 11 is provided in a via portion inside the element mounting substrate 5. The conductive layer 6 is made of, for example, a metal material such as copper, silver, gold, iron, aluminum, nickel, cobalt, chromium, tungsten, molybdenum, or manganese, or an alloy thereof. For example, it is formed using a metallization forming technique by a screen printing method.

光電変換素子7は、例えば、III−V族化合物半導体を含んでいる太陽電池素子である。光電変換素子7は、光起電力効果により、受けた光エネルギーを即時に電力に変換して出力することができる。例えば、太陽電池素子は、InGaP/GaAs/Ge3接合型セルの構造を有している。インジウムガリウムリン(InGaP)トップセルは、660nm以下の波長領域に含まれる光をエネルギー変換する。ガリウムヒ素(GaAs)ミドルセルは、660nmから890nmまでの波長領域に含まれる光をエネルギー変換する。ゲルマニウム(Ge)ボトムセルは、890nmから2000nmまでの波長領域に含まれる光をエネルギー変換する。3つのセルは、トンネル接合を介して直列に接続されている。開放電圧は、3つのセルの起電圧の和である。また、集光部材9から集光された光を受光する受光面8が、光電変換素子7の上面に形成されている。   The photoelectric conversion element 7 is, for example, a solar cell element that includes a III-V group compound semiconductor. The photoelectric conversion element 7 can immediately convert the received light energy into electric power and output it by the photovoltaic effect. For example, the solar cell element has an InGaP / GaAs / Ge3 junction type cell structure. The indium gallium phosphide (InGaP) top cell converts energy contained in a wavelength region of 660 nm or less. The gallium arsenide (GaAs) middle cell converts energy contained in a wavelength region from 660 nm to 890 nm. The germanium (Ge) bottom cell converts light contained in a wavelength region from 890 nm to 2000 nm. The three cells are connected in series via a tunnel junction. The open circuit voltage is the sum of the electromotive voltages of the three cells. A light receiving surface 8 that receives light collected from the light collecting member 9 is formed on the upper surface of the photoelectric conversion element 7.

また、光電変換素子7の下面には下面電極が形成されている。光電変換素子7の下面電極は、例えば、銀、アルミニウム等により形成されている。光電変換素子7は、低融点半田、導電性エポキシ樹脂等の接合材を介して、素子搭載基板5の上面の中央領域に設けられている導電層6上に搭載され、光電変換素子7の下面電極と導電層6とが電気的に接続されている。   In addition, a lower surface electrode is formed on the lower surface of the photoelectric conversion element 7. The lower surface electrode of the photoelectric conversion element 7 is formed of, for example, silver, aluminum or the like. The photoelectric conversion element 7 is mounted on the conductive layer 6 provided in the central region of the upper surface of the element mounting substrate 5 via a bonding material such as low melting point solder or conductive epoxy resin, and the lower surface of the photoelectric conversion element 7. The electrode and the conductive layer 6 are electrically connected.

また、光電変換素子7の上面には上面電極が設けられている。光電変換素子7の上面電極は、例えば、銀、アルミニウム等により形成されている。光電変換素子7は、導電性ワイヤで、光電変換素子7の上面電極とビア部の導電層6とが電気的に接続されている。なお、光電変換素子7の上面電極と導電層6との接続箇所は、複数箇所以上にすることにより、導電性ワイヤの1本あたりの電流が低減し、導電性ワイヤの熱の発生を抑制することができる。結果として、導電性ワイヤの信頼性を向上することができる。   An upper surface electrode is provided on the upper surface of the photoelectric conversion element 7. The upper surface electrode of the photoelectric conversion element 7 is formed of, for example, silver, aluminum or the like. The photoelectric conversion element 7 is a conductive wire, and the upper surface electrode of the photoelectric conversion element 7 and the conductive layer 6 in the via portion are electrically connected. In addition, the electric current per one conductive wire reduces and the generation | occurrence | production of the heat | fever of a conductive wire is suppressed by making the connection location of the upper surface electrode of the photoelectric conversion element 7, and the conductive layer 6 more than one place. be able to. As a result, the reliability of the conductive wire can be improved.

また、導電性ワイヤの接続箇所を複数とすることにより、複数の接続個所で、電気的な接続が維持されるため、光電変換装置2が不良となることを防ぐことができる。また、光電変換装置2の電気的な接続を確保する点においても、光電変換素子7と導電層6との接続箇所は、複数個所とすることが好ましい。   Moreover, since the electrical connection is maintained at a plurality of connection locations by using a plurality of conductive wire connection locations, the photoelectric conversion device 2 can be prevented from becoming defective. Moreover, also in the point which ensures the electrical connection of the photoelectric conversion apparatus 2, it is preferable that the connection location of the photoelectric conversion element 7 and the conductive layer 6 is made into multiple places.

集光部材9は、平面透視したときに矩形状に形成された部材である。集光部材9は、枠体10の上部と接合されるとともに、光電変換素子9と重なる領域に設けられている。集光部材9は、光電変換素子7に光を集光する機能を備えている。また、集光部材9は、透光性を有しており、受光部材3から届いた光を光電変換素子7に導く機能を備えている。集光部材9の透光性とは、光電変換素子7が、太陽電池素子である場合は、太陽光の少なくとも一部の波長領域に含まれる光が透過できることをいう。なお、集光部材9は、例えば、ホウ珪酸ガラス、プラスチック又は透光性樹脂等からなる。   The condensing member 9 is a member formed in a rectangular shape when seen through on a plane. The condensing member 9 is joined to the upper portion of the frame body 10 and is provided in a region overlapping the photoelectric conversion element 9. The condensing member 9 has a function of condensing light on the photoelectric conversion element 7. Further, the light condensing member 9 has translucency and has a function of guiding the light reaching from the light receiving member 3 to the photoelectric conversion element 7. The translucency of the condensing member 9 means that when the photoelectric conversion element 7 is a solar cell element, light included in at least a part of the wavelength region of sunlight can be transmitted. The condensing member 9 is made of, for example, borosilicate glass, plastic, or translucent resin.

また、集光部材9の側面は、枠体10との接合のために、全周にわたって金属層が形成される。また、側面の金属層は、蒸着法やスパッタ法等の薄膜形成技術によって形成される。金属層は、例えば、チタン、白金、金、クロム、ニッケル、金、銀、銅、或いはそれらの合金等の金属材料からなる。集光部材9の側面の金属層が、例えば、ロウ材、半田、低融点ガラス又はエポキシ樹脂等からなる接合部材を介して、枠体10の全周にわたって枠体10と接合される。接合方法は、例えば、ロウ接合、半田接合又は樹脂接合等の方法からなる。   Further, a metal layer is formed on the side surface of the light collecting member 9 over the entire circumference for joining with the frame body 10. The metal layer on the side surface is formed by a thin film forming technique such as vapor deposition or sputtering. A metal layer consists of metal materials, such as titanium, platinum, gold | metal | money, chromium, nickel, gold | metal | money, silver, copper, or those alloys, for example. The metal layer on the side surface of the light collecting member 9 is joined to the frame body 10 over the entire circumference of the frame body 10 through a joining member made of, for example, a brazing material, solder, low melting point glass, epoxy resin, or the like. The bonding method includes, for example, a method such as solder bonding, solder bonding, or resin bonding.

ロウ材は、例えば、銀−銅ロウ等からなる。半田は、金−錫系、金−ゲルマニウム系又は錫−鉛系等からなる。また、低融点ガラスとは、ガラス転移点が600℃以下のガラスのことをいう。また、集光部材9は、枠体10の上部で、枠体10と接合されている。また、集光部材9は、枠体10の傾斜部10aの位置で、光電変換素子7に集光することができる位置で有れば、枠体10の傾斜部10aのどの位置で接合されてもよい。枠体10については、後述する。   The brazing material is made of, for example, silver-copper brazing. The solder is made of gold-tin, gold-germanium, tin-lead, or the like. The low melting point glass means a glass having a glass transition point of 600 ° C. or lower. The light condensing member 9 is joined to the frame body 10 at the upper part of the frame body 10. Further, the condensing member 9 is joined at any position of the inclined portion 10a of the frame 10 as long as the condensing member 9 is at a position of the inclined portion 10a of the frame 10 and can be condensed on the photoelectric conversion element 7. Also good. The frame 10 will be described later.

また、集光部材9は、光の反射によって断面積内の光エネルギーの強度分布を均等化する機能を有していればよい。   Moreover, the condensing member 9 should just have the function to equalize the intensity distribution of the light energy in a cross-sectional area by reflection of light.

枠体10は、平面透視したときに、矩形状に形成された部材である。枠体10は、素子搭載基板5の上面に設けられ、光電変換素子7を取り囲むとともに、下部が中央領域から中央領域の外周に位置する周辺領域に向かって延在して素子搭載基板5の上面と接合されている。枠体10は、上部が、素子搭載基板5の上方に延在し、集光部材9と接合される傾斜部10aと、下部が素子搭載基板5の中央領域の外周に位置する周辺領域に向かって延在して素子搭載基板5の上面に接合される延在部10bとを備えている。また、枠体10は、集光部材9を支持する機能を備えている。枠体10は、枠体10の上部で、集光部材9が接合される。枠体10は、平面透視したときに、矩形状に形成された部材であるが、矩形状に限らず、円形状等の形状にすることができる。   The frame 10 is a member formed in a rectangular shape when seen through on a plane. The frame 10 is provided on the upper surface of the element mounting substrate 5, surrounds the photoelectric conversion element 7, and the lower portion extends from the central region toward the peripheral region located on the outer periphery of the central region, and the upper surface of the element mounting substrate 5. It is joined with. The frame body 10 has an upper portion extending above the element mounting substrate 5, an inclined portion 10 a joined to the light collecting member 9, and a lower portion facing a peripheral region located on the outer periphery of the central region of the element mounting substrate 5. And an extending portion 10b that is joined to the upper surface of the element mounting substrate 5. The frame body 10 has a function of supporting the light collecting member 9. The light collecting member 9 is joined to the frame 10 at the upper part of the frame 10. The frame 10 is a member formed in a rectangular shape when seen through on a plane, but is not limited to a rectangular shape, and may be formed in a circular shape or the like.

また、枠体10は、例えば、アルミニウム、銅又は銀等の金属材料、或いはこれらの金属材料を含有する合金、或いは焼結タングステンに銅を含浸したような複合材料、銅含浸タングステンに設けられた複数の貫通孔に銅を充填したような複合材料又は各種金属を層状に積層した複合材料等からなる。なお、枠体10の熱伝導率は、例えば、100(W/m・K)以上500(W/m・K)以下に設定されている。また、枠体10の熱膨張係数は、10(ppm/℃)以上25(ppm/℃)以下に設定されている。これにより、光電変換素子7の周辺で発生した熱が、枠体10に熱伝導して効率よく外部に放熱される。   The frame 10 is provided on a metal material such as aluminum, copper or silver, an alloy containing these metal materials, a composite material in which sintered tungsten is impregnated with copper, or copper-impregnated tungsten, for example. It consists of a composite material in which a plurality of through holes are filled with copper or a composite material in which various metals are laminated in layers. The thermal conductivity of the frame 10 is set to, for example, 100 (W / m · K) or more and 500 (W / m · K) or less. The thermal expansion coefficient of the frame 10 is set to 10 (ppm / ° C.) or more and 25 (ppm / ° C.) or less. Thereby, the heat generated in the vicinity of the photoelectric conversion element 7 is thermally conducted to the frame 10 and efficiently radiated to the outside.

また、枠体10は、素子搭載基板5の上方に延在する傾斜部10aの内面が鏡面加工されている。枠体10は、鏡面加工によって光の反射効率を向上することができる。また、枠体10は、温度上昇を抑制することができる。鏡面加工は、研削することにより平滑に仕上げるように加工しても、メッキを施して加工してもよい。また、枠体10の傾斜部10aの厚みは、光電変換素子7で反射した光の外部への光漏れを抑制するために、例えば、0.3mm以上3.0mm以下に設定されている。また、枠体10の延在部10bの厚みは、例えば、0.3mm以上3.0mm以下に設定される。   The frame 10 has a mirror-finished inner surface of an inclined portion 10 a extending above the element mounting substrate 5. The frame 10 can improve the light reflection efficiency by mirror finishing. Moreover, the frame 10 can suppress a temperature rise. The mirror surface processing may be processed so as to be finished smoothly by grinding or may be processed by plating. Further, the thickness of the inclined portion 10a of the frame body 10 is set to, for example, 0.3 mm or more and 3.0 mm or less in order to suppress the leakage of the light reflected by the photoelectric conversion element 7 to the outside. Moreover, the thickness of the extension part 10b of the frame 10 is set to 0.3 mm or more and 3.0 mm or less, for example.

また、枠体10は、集光部材9の側面のみで接合されているので、枠体10と集光部材9の接合面積を小さくすることできる。結果として、枠体10から集光部材9への圧縮応力が低減でき、集光部材9の屈折率の変化による光電変換素子7の受光面8への照射光の位置ずれを抑制することができ、集光性を向上することができる。   Moreover, since the frame 10 is joined only by the side surface of the light collecting member 9, the joint area between the frame 10 and the light collecting member 9 can be reduced. As a result, the compressive stress from the frame 10 to the light collecting member 9 can be reduced, and the displacement of the irradiation light on the light receiving surface 8 of the photoelectric conversion element 7 due to the change in the refractive index of the light collecting member 9 can be suppressed. Condensability can be improved.

また、枠体10は、枠体10の全周にわたって集光部材9と接合されるとともに、光電変換素子7の上方に空間20を介して設けられている。結果として、光電変換素子7は、素子搭載基板5、枠体10及び集光部材9で囲まれる空間20内に設けられ、気密封止される。光電変換素子7が、内部の空間20に設けられることによって、光電変換素子7を気密封止することができるため、光電変換素子7の耐湿性が向上し、光電変換素子7を長期にわたって信頼性良く作動させることができる。   Further, the frame body 10 is joined to the light collecting member 9 over the entire circumference of the frame body 10 and is provided above the photoelectric conversion element 7 via a space 20. As a result, the photoelectric conversion element 7 is provided in a space 20 surrounded by the element mounting substrate 5, the frame body 10, and the light collecting member 9 and hermetically sealed. Since the photoelectric conversion element 7 can be hermetically sealed by being provided in the internal space 20, the moisture resistance of the photoelectric conversion element 7 is improved, and the photoelectric conversion element 7 is reliable over a long period of time. Can work well.

導電性部材11は、例えば、アルミニウム、銅又は銀等の金属材料、或いはこれらの金属材料を含有する合金、或いは焼結タングステンに銅を含浸したような複合材料、銅含浸タングステンに設けられた複数の貫通孔に銅を充填したような複合材料又は各種金属を層状に積層した複合材料等からなる。導電性部材11は、素子搭載基板5の下面に設けられ、平面透視して枠体10と重なる領域に設けられている。また、導電性部材11は、熱伝導性を良好にし、素子搭載基板5に搭載された光電変換素子7から発生する熱を効率よく外部に放熱させる機能を備えている。すなわち、光電変換素子7の周辺の熱が導電性部材11に熱伝導して効率よく外部に放熱される。   The conductive member 11 is, for example, a metal material such as aluminum, copper or silver, an alloy containing these metal materials, a composite material in which copper is impregnated with sintered tungsten, or a plurality of copper impregnated tungsten. It is made of a composite material in which copper is filled in the through-hole or a composite material in which various metals are laminated in layers. The conductive member 11 is provided on the lower surface of the element mounting substrate 5, and is provided in a region that overlaps the frame body 10 in a plan view. In addition, the conductive member 11 has a function of improving heat conductivity and efficiently radiating heat generated from the photoelectric conversion element 7 mounted on the element mounting substrate 5 to the outside. That is, the heat around the photoelectric conversion element 7 is conducted to the conductive member 11 and efficiently radiated to the outside.

また、導電性部材11の熱伝導率は、例えば、100(W/m・K)以上500(W/m・K)以下に設定されている。また、導電性部材11の熱膨張係数は、10(ppm/℃)以上25(ppm/℃)以下に設定されている。また、導電性部材11の厚みは、例えば、0.3mm以上3.0mm以下に設定される。また、枠体10と導電性部材11の熱膨張係数は、素子搭載基板5の熱膨張係数より大きく設定されている。なお、導電性部材11は、光電変換装置2が外部へ電気を取り出すための出力端子の機能を備えている。   The thermal conductivity of the conductive member 11 is set to, for example, 100 (W / m · K) or more and 500 (W / m · K) or less. The thermal expansion coefficient of the conductive member 11 is set to 10 (ppm / ° C.) or more and 25 (ppm / ° C.) or less. Moreover, the thickness of the conductive member 11 is set to 0.3 mm or more and 3.0 mm or less, for example. Further, the thermal expansion coefficients of the frame 10 and the conductive member 11 are set larger than the thermal expansion coefficient of the element mounting substrate 5. In addition, the electroconductive member 11 is provided with the function of the output terminal for the photoelectric conversion apparatus 2 to take out electricity outside.

また、第1の導電性部材11a及び第2の導電性部材11bは、接合材を介して、導電層6と電気的に接続されている。接合材は、例えば、銀−銅ロウ、低融点半田又は導電性エポキシ樹脂等からなる。   The first conductive member 11a and the second conductive member 11b are electrically connected to the conductive layer 6 through a bonding material. The bonding material is made of, for example, silver-copper solder, low melting point solder, conductive epoxy resin, or the like.

また、第1の導電性部材11aは、例えば、正極として機能する。また、第2の導電性部材11bは、例えば、負極として機能する。そして、光電変換素子7は、第1の導電性部材11a及び第2の導電性部材11bに電気的に接続されており、第1の導電性部材11a及び第2の導電性部材11bを介して外部に電気を取り出すことができる。   The first conductive member 11a functions as, for example, a positive electrode. The second conductive member 11b functions as, for example, a negative electrode. The photoelectric conversion element 7 is electrically connected to the first conductive member 11a and the second conductive member 11b, via the first conductive member 11a and the second conductive member 11b. Electricity can be taken out to the outside.

また、導電性部材11は、例えば、溶融した金属材料を型枠に鋳込んで作製したインゴットを周知の切削加工や打ち抜き加工等の金属加工法を用いて所定形状にして形成される。   In addition, the conductive member 11 is formed in a predetermined shape using a known metal working method such as cutting or punching, for example, an ingot produced by casting a molten metal material into a mold.

ここで、光電変換素子収納用パッケージについて説明する。光電変換素子収納用パッケージは、素子搭載基板5、枠体10及び導電性部材11で構成され、光電変換素子7及び集光部材9が未搭載の状態である。すなわち、光電変換素子収納用パッケージは、光電変換素子7が搭載される搭載部を有した素子搭載基板5と、素子搭載基板5上の搭載部を取り囲むように設けられる枠体10と、を備えている。なお、枠体10には、光電変換素子7の搭載予定位置より上方位置に設けられる予定の集光部材9が接合される。   Here, the photoelectric conversion element storage package will be described. The photoelectric conversion element storage package includes the element mounting substrate 5, the frame body 10, and the conductive member 11, and the photoelectric conversion element 7 and the light collecting member 9 are not mounted. That is, the photoelectric conversion element storage package includes an element mounting substrate 5 having a mounting portion on which the photoelectric conversion element 7 is mounted, and a frame body 10 provided so as to surround the mounting portion on the element mounting substrate 5. ing. In addition, the light collecting member 9 scheduled to be provided above the position where the photoelectric conversion element 7 is to be mounted is joined to the frame 10.

本実施形態によれば、素子搭載基板5の上面は、枠体10の延在部10bが当接して設けられ、素子搭載基板5の下面は、導電性部材11が当接して設けられているので、光電変換装置2は、光電変換素子7の周辺の熱を枠体10及び導電性部材11を介して光電変換装置2の外部に効率よく放熱することができ、素子搭載基板5及び光電変換素子7の温度上昇を抑制することができる。結果として、光電変換素子7の変換効率の低下を抑制することができる。   According to the present embodiment, the upper surface of the element mounting substrate 5 is provided in contact with the extending portion 10 b of the frame 10, and the lower surface of the element mounting substrate 5 is provided in contact with the conductive member 11. Therefore, the photoelectric conversion device 2 can efficiently dissipate the heat around the photoelectric conversion element 7 to the outside of the photoelectric conversion device 2 through the frame body 10 and the conductive member 11, and the element mounting substrate 5 and the photoelectric conversion device. The temperature rise of the element 7 can be suppressed. As a result, a decrease in conversion efficiency of the photoelectric conversion element 7 can be suppressed.

また、枠体10の延在部10b及び導電性部材11が、素子搭載基板5の上面及び下面に当接して設けられ、導電性部材11が、平面透視して枠体10の延在部10bと素子搭載基板5の上面とが接合される領域と重なる領域に設けられているので、素子搭載基板5の反りを抑制することができる。つまり、枠体10の延在部10bが素子搭載基板5よりも熱膨張係数が大きく、かつ、導電性部材11が素子搭載基板5よりも熱膨張係数が大きいので、素子搭載基板5に接合された枠体10の延在部10bによる素子搭載基板5の上方に向かって変形する熱変形を、素子搭載基板5に接合された導電性部材11によって、素子搭載基板5の下方に向かって変形させることで、素子搭載基板5の応力の均衡が崩れるのを抑制することができ、ひいては、素子搭載基板5の反りを小さくすることができる。したがって、光電変換装置2は、素子搭載基板5の熱変形が抑制されることで、光電変換素子7の受光面8の反りが抑制され、光電変換素子7に対する集光部材9の位置ずれを低減することができ、集光効率を向上することができる。   In addition, the extending portion 10b of the frame body 10 and the conductive member 11 are provided in contact with the upper surface and the lower surface of the element mounting substrate 5, and the conductive member 11 is seen through the plane and the extending portion 10b of the frame body 10. And the upper surface of the element mounting substrate 5 are provided in a region overlapping with a region where the element mounting substrate 5 is joined, so that warpage of the element mounting substrate 5 can be suppressed. That is, since the extension portion 10b of the frame 10 has a larger thermal expansion coefficient than that of the element mounting substrate 5 and the conductive member 11 has a larger thermal expansion coefficient than that of the element mounting substrate 5, it is bonded to the element mounting substrate 5. The thermal deformation that is deformed upward of the element mounting substrate 5 by the extending portion 10b of the frame 10 is deformed downward of the element mounting substrate 5 by the conductive member 11 bonded to the element mounting substrate 5. As a result, it is possible to suppress the stress balance of the element mounting substrate 5 from being lost, and thus the warpage of the element mounting substrate 5 can be reduced. Therefore, in the photoelectric conversion device 2, the warpage of the light receiving surface 8 of the photoelectric conversion element 7 is suppressed by suppressing the thermal deformation of the element mounting substrate 5, and the positional deviation of the light collecting member 9 with respect to the photoelectric conversion element 7 is reduced. It is possible to improve the light collection efficiency.

また、枠体10の延在部10b及び導電性部材11の熱膨張係数が同一な場合は、素子搭載基板5の反りを抑制するという点で、延在部10bと導電性部材11の厚みを同一に、かつ、素子搭載基板5に接合されている延在部10bと導電性部材11の領域を同一に設定することが好ましい。光電変換素子7の受光面8の反りを抑制することができ、集光効率を向上することができる。   Moreover, when the thermal expansion coefficient of the extension part 10b of the frame 10 and the conductive member 11 is the same, the thickness of the extension part 10b and the conductive member 11 is reduced in that the warpage of the element mounting substrate 5 is suppressed. It is preferable that the extension 10b bonded to the element mounting substrate 5 and the region of the conductive member 11 are set to be the same. Warpage of the light receiving surface 8 of the photoelectric conversion element 7 can be suppressed, and light collection efficiency can be improved.

また、枠体10の延在部10b及び導電性部材11の熱膨張係数が異なる場合は、素子搭載基板5の反りを抑制するという点で、熱膨張係数の大きい方の厚みを、熱膨張係数の小さい方の厚みよりも薄くし、素子搭載基板5に対する応力が均衡となるように素子搭載基板5に延在部10b及び導電性部材11を接合することによって素子搭載基板5の反りを抑制することができる。   Further, when the thermal expansion coefficients of the extending portion 10b of the frame 10 and the conductive member 11 are different, the thickness with the larger thermal expansion coefficient is set to the thermal expansion coefficient in terms of suppressing warpage of the element mounting substrate 5. The warp of the element mounting substrate 5 is suppressed by bonding the extending portion 10b and the conductive member 11 to the element mounting substrate 5 so that the stress on the element mounting substrate 5 is balanced. be able to.

また、光電変換装置2は、光電変換素子7の周辺部の熱を素子搭載基板5の内部に設けられたビア部の導電層6を経由して効率よく導電性部材11に熱伝導し外部に放熱することができる。   In addition, the photoelectric conversion device 2 efficiently conducts heat from the peripheral portion of the photoelectric conversion element 7 to the conductive member 11 via the conductive layer 6 in the via portion provided in the element mounting substrate 5 to the outside. It can dissipate heat.

<光電変換装置及び光電変換モジュールの製造方法>
ここで、図1に示す光電変換モジュール1及び図2に示す光電変換装置2の製造方法を説明する。
<Method for Manufacturing Photoelectric Conversion Device and Photoelectric Conversion Module>
Here, a method for manufacturing the photoelectric conversion module 1 shown in FIG. 1 and the photoelectric conversion device 2 shown in FIG. 2 will be described.

まず、素子搭載基板5を準備する。素子搭載基板5は、例えば、酸化アルミニウム質焼結体からなる場合、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に、有機バインダー、可塑剤、溶剤等を添加し、混合して得られた混合物によってグリーンシートを成型する。また、金属ペーストは、タングステン又はモリブデン等の高融点金属粉末を準備し、この粉末に有機バインダー、可塑剤、溶剤等を添加し、混合して作製する。また、素子搭載基板5は、図3に示すように、例えば、第1の素子搭載基板5a及び第2の素子搭載基板5bと2分割にして作製する。   First, the element mounting substrate 5 is prepared. For example, when the element mounting substrate 5 is made of an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, and the like are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A green sheet is formed from the obtained mixture. The metal paste is prepared by preparing a high melting point metal powder such as tungsten or molybdenum, adding an organic binder, a plasticizer, a solvent and the like to the powder and mixing them. In addition, as shown in FIG. 3, the element mounting substrate 5 is manufactured, for example, by dividing it into a first element mounting substrate 5a and a second element mounting substrate 5b.

グリーンシートの状態の素子搭載基板5aは、光電変換素子7が搭載される領域に、例えば、スクリーン印刷法を用い、金属ペーストを印刷して、導電層6となるメタライズ層を形成する。同様にして、グリーンシートの状態の素子搭載基板5aは、枠体10と接合される領域に、メタライズ層を形成する。また、素子搭載基板5bと電気的な接続をするためのビア部に、例えば、スクリーン印刷法を用い、金属ペーストを充填して、導電層6となるメタライズ層を形成する。   The element mounting substrate 5a in the state of a green sheet forms a metallized layer to be the conductive layer 6 by printing a metal paste on a region where the photoelectric conversion element 7 is mounted using, for example, a screen printing method. Similarly, the element mounting substrate 5a in the state of a green sheet forms a metallized layer in a region bonded to the frame body 10. In addition, a metalized layer to be the conductive layer 6 is formed by filling a via portion for electrical connection with the element mounting substrate 5b using, for example, a screen printing method and filling a metal paste.

また、グリーンシートの状態の素子搭載基板5bは、素子搭載基板5aと電気的な接続をするために導電層6となるメタライズ層を、例えば、スクリーン印刷法を用い、金属ペーストを印刷して形成する。また、熱伝導性部材11a及び熱伝導性部材11bと当接する領域に、例えば、スクリーン印刷法を用い、金属ペーストを印刷して、導電層6となるメタライズ層を形成する。また、素子搭載基板5bの上面及び下面に形成されるメタライズ層と電気的な接続をするためにビア部に、例えば、スクリーン印刷法を用い、金属ペーストを充填して、導電層6となるメタライズ層を形成する。   The element mounting substrate 5b in the green sheet state is formed by printing a metal paste using, for example, a screen printing method to form a metallized layer that becomes the conductive layer 6 for electrical connection with the element mounting substrate 5a. To do. In addition, a metallized layer to be the conductive layer 6 is formed by printing a metal paste on a region in contact with the heat conductive member 11a and the heat conductive member 11b using, for example, a screen printing method. Further, in order to make an electrical connection with the metallized layers formed on the upper and lower surfaces of the element mounting substrate 5b, the vias are filled with a metal paste using, for example, a screen printing method to form the conductive layer 6. Form a layer.

さらに、焼結体の素子搭載基板5は、グリーンシート状態の素子搭載基板5b上に、グリーンシート状態の素子搭載基板5aを積層して、約1600℃の温度で同時に焼成することにより、焼成後に、素子搭載基板5a及び素子搭載基板5bを一体化して作製する。   Further, the sintered element mounting substrate 5 is obtained by laminating the green sheet state element mounting substrate 5a on the green sheet state element mounting substrate 5b and simultaneously firing at a temperature of about 1600 ° C. The element mounting substrate 5a and the element mounting substrate 5b are integrally manufactured.

次に、枠体10は、アルミニウムからなる金属板を素子搭載基板5の上方に延在する傾斜部10a及び素子搭載基板5に接合する延在部10bを有するように成型することで作製する。また、素子搭載基板の上方に延在する傾斜部10a及び素子搭載基板5に接合する延在部10bを有している金型にアルミニウムからなる金属材料を入れて金型成型することで作製してもよい。   Next, the frame body 10 is manufactured by molding a metal plate made of aluminum so as to have an inclined portion 10 a extending above the element mounting substrate 5 and an extending portion 10 b joining the element mounting substrate 5. In addition, it is manufactured by putting a metal material made of aluminum into a mold having an inclined portion 10a extending above the element mounting substrate and an extending portion 10b bonded to the element mounting substrate 5 and molding the mold. May be.

そして、枠体10は、例えば、Au−Cuロウ材、半田、ガラス又は樹脂等を介して、素子搭載基板5の上面に形成されたメタライズ層と接合する。   Then, the frame body 10 is joined to a metallized layer formed on the upper surface of the element mounting substrate 5 via, for example, Au—Cu brazing material, solder, glass, resin, or the like.

また、第1の導電性部材11a及び第2の導電性部材11bは、例えば、Au−Cuロウ材、半田、ガラス又は樹脂等を介して、素子搭載基板5に形成されたメタライズ層と接合する。   The first conductive member 11a and the second conductive member 11b are bonded to the metallized layer formed on the element mounting substrate 5 through, for example, an Au—Cu brazing material, solder, glass, resin, or the like. .

また、素子搭載基板5は、素子搭載基板5に露出しているメタライズ層に、電解メッキ又は無電解メッキ等のメッキ形成方法によって、ニッケルメッキ層を形成する。更に、ニッケルメッキ層上に金メッキ層を形成する。これによって、素子搭載基板5、枠体10及び導電性部材11で構成され、光電変換素子7及び集光部材9が未搭載の状態である光電変換素子収納用パッケージを作製する。   The element mounting substrate 5 forms a nickel plating layer on the metallized layer exposed on the element mounting substrate 5 by a plating method such as electrolytic plating or electroless plating. Further, a gold plating layer is formed on the nickel plating layer. As a result, a photoelectric conversion element housing package is formed which is composed of the element mounting substrate 5, the frame body 10, and the conductive member 11 and in which the photoelectric conversion element 7 and the light collecting member 9 are not mounted.

次に、素子搭載基板5は、枠体10で取り囲まれる領域であって、素子搭載基板5の一主面上に形成された金メッキ層からなる導電層6上に、例えば、Au−Sn半田によって光電変換素子7を搭載し、光電変換素子7の下面電極と導電層6を電気的に接続する。また、光電変換素子7は、光電変換素子7の上面電極に対して、導電性ワイヤを介して、光電変換素子7の上面電極とビア部の金メッキ層からなる導電層6とを電気的に接続する。   Next, the element mounting substrate 5 is a region surrounded by the frame body 10, and is formed on the conductive layer 6 made of a gold plating layer formed on one main surface of the element mounting substrate 5 by, for example, Au—Sn solder. The photoelectric conversion element 7 is mounted, and the lower electrode of the photoelectric conversion element 7 and the conductive layer 6 are electrically connected. The photoelectric conversion element 7 electrically connects the upper surface electrode of the photoelectric conversion element 7 and the conductive layer 6 made of a gold plating layer in the via portion to the upper surface electrode of the photoelectric conversion element 7 through a conductive wire. To do.

集光部材9は、モールド成形技術によって作製する。具体的には、集光部材9の金型内に、ホウ珪酸ガラスを投入し、加熱、プレスして成形する。さらに、当該成形品を冷却して金型から成形品を取り出すことで、集光部材9を作製する。そして、集光部材9の側面の全周にわたって、例えば、蒸着法によって、クロムの金属層を形成する。   The condensing member 9 is produced by a molding technique. Specifically, borosilicate glass is put into the mold of the light collecting member 9 and heated and pressed to form. Furthermore, the said light-condensing member 9 is produced by cooling the said molded article and taking out a molded article from a metal mold | die. Then, a chromium metal layer is formed, for example, by vapor deposition over the entire circumference of the side surface of the light collecting member 9.

そして、集光部材9は、半田等を介して、枠体10に接合する。なお、集光部材9は、集光部材9を枠体10に接合した後、枠体10を素子搭載基板5に接合してもよい。このようにして、光電変換装置2を作製する。   And the condensing member 9 is joined to the frame 10 via solder or the like. The condensing member 9 may be joined to the element mounting substrate 5 after the condensing member 9 is joined to the frame body 10. In this way, the photoelectric conversion device 2 is manufactured.

ここで、光電変換モジュール1の作製方法について説明する。複数個の光電変換装置2と、外部基板4を準備する。光電変換装置2は、外部基板4に絶縁層を介して固定される。なお、絶縁層としては、例えば、エポキシ樹脂、ガラスエポキシ樹脂又はシリコーン樹脂等の熱伝導性の優れた樹脂、或いは、アルミナ又は窒化アルミニウム等のセラミック材料からなる。また、絶縁層は、光電変換装置2の導電性部材11からの伝導する熱を放散する機能を備えている。   Here, a manufacturing method of the photoelectric conversion module 1 will be described. A plurality of photoelectric conversion devices 2 and an external substrate 4 are prepared. The photoelectric conversion device 2 is fixed to the external substrate 4 via an insulating layer. The insulating layer is made of, for example, a resin having excellent thermal conductivity such as an epoxy resin, a glass epoxy resin, or a silicone resin, or a ceramic material such as alumina or aluminum nitride. Further, the insulating layer has a function of dissipating heat conducted from the conductive member 11 of the photoelectric conversion device 2.

ここでは、二つの光電変換装置2の接続方法について説明する。   Here, a method of connecting the two photoelectric conversion devices 2 will be described.

まず、図11に示すように、一方の光電変換素子2と他方の光電変換装置2とが隣り合うように、例えば、絶縁層を介して、両者を外部基板4上に固定する。そして、配置した二つの光電変換装置2の素子搭載基板5に当接された導電性部材11をそれぞれ延在して、互いに電気的に接続する。導電性部材11を延在して、隣り合う光電変換装置2を互いに電気的に接続することができるので、光電変換モジュールを小型化することができる。また、導電性部材11を延在して、互いの導電性部材11を導電性ワイヤ等の接続部材を介して電気的に接続してもよい。同様にして、複数の光電変換装置2を外部基板4に配置して固定し、電気的に接続する。そして、外部基板4に配置した複数の光電変換装置2上に受光部材3を設けることで、光電変換モジュール1を作製することができる。   First, as shown in FIG. 11, both the photoelectric conversion elements 2 and the other photoelectric conversion device 2 are fixed on the external substrate 4 through an insulating layer, for example, so as to be adjacent to each other. And the electroconductive member 11 contact | abutted to the element mounting board | substrate 5 of the two arrange | positioned photoelectric conversion apparatuses 2 is each extended, and is mutually electrically connected. Since the conductive member 11 extends and the adjacent photoelectric conversion devices 2 can be electrically connected to each other, the photoelectric conversion module can be reduced in size. Alternatively, the conductive members 11 may be extended so that the conductive members 11 are electrically connected to each other via a connection member such as a conductive wire. Similarly, a plurality of photoelectric conversion devices 2 are arranged and fixed on the external substrate 4 and are electrically connected. And the photoelectric conversion module 1 can be produced by providing the light receiving member 3 on the plurality of photoelectric conversion devices 2 arranged on the external substrate 4.

本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。以下、本実施形態の変形例について説明する。なお、本実施形態の変形例に係る光電変換装置のうち、本実施形態に係る光電変換装置2と同様な部分については、同一の符号を付して適宜説明を省略する。   The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention. Hereinafter, modifications of the present embodiment will be described. Note that, in the photoelectric conversion device according to the modification of the present embodiment, the same portions as those of the photoelectric conversion device 2 according to the present embodiment are denoted by the same reference numerals, and description thereof is omitted as appropriate.

<変形例1>
本実施形態の変形例1に係る光電変換装置2では、本実施形態に係る光電変換装置2と比較して、枠体10の延在部10bの厚みが変更されたものになっている。
<Modification 1>
In the photoelectric conversion device 2 according to the first modification of the present embodiment, the thickness of the extending portion 10b of the frame 10 is changed as compared with the photoelectric conversion device 2 according to the present embodiment.

本実施形態によれば、枠体10の延在部10bは、図4に示すように、素子搭載基板5の素子搭載基板5の中央領域から周辺領域の全方位に向かって延在している。光電変換装置2は、枠体10が素子搭載基板5との接合領域が広く設定されているので、光電変換素子7の周辺の熱を効率よく外部に放熱することができ、素子搭載基板5及び光電変換素子7の温度上昇を抑制することができる。結果として、光電変換装置2は、光電変換素子7の変換効率の低下を抑制することができる。   According to the present embodiment, the extending portion 10b of the frame 10 extends from the central region of the element mounting substrate 5 of the element mounting substrate 5 toward all directions in the peripheral region, as shown in FIG. . In the photoelectric conversion device 2, since the frame 10 has a wide junction region with the element mounting substrate 5, the heat around the photoelectric conversion element 7 can be efficiently radiated to the outside, and the element mounting substrate 5 and The temperature rise of the photoelectric conversion element 7 can be suppressed. As a result, the photoelectric conversion device 2 can suppress a decrease in conversion efficiency of the photoelectric conversion element 7.

また、枠体10の延在部10bと素子搭載基板5とが接合している領域が広く設定され、図5に示すように、延在部10bよりも導電性部材11の厚みが厚く設定されているので、素子搭載基板5に対する応力が均衡となり、素子搭載基板5の反りを抑制することができる。導電性部材11の厚み及び素子搭載基板5との接合する領域を調整することによって、素子搭載基板5の反りを抑制することができる。なお、延在部10b及び導電性部材11のそれぞれの厚みは、延在部10bよりも導電性部材11の厚みが厚くなるように、例えば、0.3mm以上3.0mm以下の範囲でそれぞれに設定される。   In addition, a region where the extending portion 10b of the frame body 10 and the element mounting substrate 5 are joined is set wide, and the thickness of the conductive member 11 is set to be thicker than the extending portion 10b as shown in FIG. As a result, the stress on the element mounting substrate 5 is balanced, and the warpage of the element mounting substrate 5 can be suppressed. The warpage of the element mounting substrate 5 can be suppressed by adjusting the thickness of the conductive member 11 and the region to be joined to the element mounting substrate 5. In addition, each thickness of the extension part 10b and the electroconductive member 11 is each in the range of 0.3 mm or more and 3.0 mm or less, for example so that the thickness of the electroconductive member 11 may become thicker than the extension part 10b. Is set.

また、素子搭載基板5に対する効力が均衡となるように、枠体10の延在部10b又は導電性部材11の厚み、又は、枠体10の延在部10b又は導電性部材11と素子搭載基板5と接合する領域を調整することによって、素子搭載基板5の反りを抑制することができる。   Further, the thickness of the extending portion 10b or the conductive member 11 of the frame body 10 or the extending portion 10b or the conductive member 11 of the frame body 10 and the element mounting substrate so that the effects on the element mounting substrate 5 are balanced. By adjusting the region bonded to 5, warping of the element mounting substrate 5 can be suppressed.

<変形例2>
上記実施形態に係る光電変換装置2は、枠体10は、枠体10の傾斜部10a及び延在部10bで構成されているが、これに限らない。図6に示すように、断面視したときに、枠体10が、枠体10の傾斜部10aと延在部10bの間に光電変換素子7を取り囲むように光電変換素子7よりも高い位置で光電変換素子7の外方に向かって屈曲するとともに光電変換素子7に近接して設けられる屈曲部10cを有する構成としてもよい。光電変換素子7の周辺の熱によって、素子搭載基板5と枠体10の接合応力が高まってとしても、屈曲部10cを有しているので、枠体10の屈曲部10cが撓むことによって、素子搭載基板5と枠体10の延在部10bの接合性の低下を抑制することができる。また、接合性の低下によって生じる枠体10の変形による光電変換素子7への集光効率の低下を抑制することができる。
<Modification 2>
In the photoelectric conversion device 2 according to the above-described embodiment, the frame body 10 includes the inclined portion 10a and the extending portion 10b of the frame body 10, but is not limited thereto. As shown in FIG. 6, when viewed in cross section, the frame 10 is positioned higher than the photoelectric conversion element 7 so as to surround the photoelectric conversion element 7 between the inclined portion 10 a and the extending portion 10 b of the frame 10. It is good also as a structure which has the bending part 10c provided close to the photoelectric conversion element 7 while it bends toward the outer side of the photoelectric conversion element 7. FIG. Even if the bonding stress between the element mounting substrate 5 and the frame body 10 is increased by the heat around the photoelectric conversion element 7, the bent portion 10 c has the bent portion 10 c, so that the bent portion 10 c of the frame body 10 is bent, It is possible to suppress a decrease in the bonding property between the element mounting substrate 5 and the extending portion 10b of the frame body 10. Moreover, the fall of the condensing efficiency to the photoelectric conversion element 7 by the deformation | transformation of the frame 10 which arises by the fall of joining property can be suppressed.

また、素子搭載基板5と延在部10bとの接合応力が高まり、素子搭載基板5が反ったとしても、枠体10の屈曲部10cが撓むことによって、枠体10の傾斜部10aの変形を抑制することができる。結果として、枠体10の傾斜部10aの変形による光電変換素子7への集光効率の低下を抑制することができる。   Further, even if the bonding stress between the element mounting substrate 5 and the extending portion 10b is increased and the element mounting substrate 5 is warped, the bent portion 10c of the frame body 10 is bent to deform the inclined portion 10a of the frame body 10. Can be suppressed. As a result, it is possible to suppress a decrease in light collection efficiency on the photoelectric conversion element 7 due to the deformation of the inclined portion 10a of the frame body 10.

また、光電変換装置2は、屈曲部10cを有しているので、屈曲部10cを経由して、光電変換素子7の周辺の熱を枠体10へ熱伝導し効率よく外部に放熱することができる。   Further, since the photoelectric conversion device 2 has the bent portion 10c, the heat around the photoelectric conversion element 7 can be conducted to the frame body 10 through the bent portion 10c and efficiently radiated to the outside. it can.

<変形例3>
また、図7のように、集光部材9から光電変換素子7へ光が入射する光入射部40の領域の形状を光電変換素子7の受光面8の領域の形状と合わせる構成としてもよい。すなわち、平面透視したときに、光入射部40の形状が、光電変換素子7の受光面8の形状に合わせて形成される。光入射部40の形状が、光電変換素子7の受光面8の形状に合わせて形成されることによって、集光部材9から光入射部40を通過して、光電変換素子7の受光面8へ照射される照射光の集光性を向上させることができる。例えば、光電変換素子7の受光面8が円形状で有れば、光入射部40の形状は、円形状として一致させることが好ましく、また、光電変換素子7の受光面7が矩形状で有れば、光入射部40の形状は、矩形状として一致させることが好ましい。
<Modification 3>
Further, as shown in FIG. 7, the shape of the region of the light incident portion 40 where light is incident from the light collecting member 9 to the photoelectric conversion element 7 may be matched with the shape of the region of the light receiving surface 8 of the photoelectric conversion element 7. That is, the shape of the light incident portion 40 is formed in accordance with the shape of the light receiving surface 8 of the photoelectric conversion element 7 when viewed through the plane. By forming the shape of the light incident portion 40 according to the shape of the light receiving surface 8 of the photoelectric conversion element 7, the light incident portion 40 passes through the light incident portion 40 from the light collecting member 9 to the light receiving surface 8 of the photoelectric conversion element 7. The light condensing property of the irradiated light can be improved. For example, if the light receiving surface 8 of the photoelectric conversion element 7 is circular, the shape of the light incident portion 40 is preferably matched as a circle, and the light receiving surface 7 of the photoelectric conversion element 7 is rectangular. In this case, the shape of the light incident portion 40 is preferably matched as a rectangular shape.

また、光電変換装置2は、光電変換素子7と枠体10の屈曲部10cとが接近して設けられており、屈曲部10cを経由して、光電変換素子7の周辺の熱を枠体10へ熱伝導して効率よく外部に放熱することができる。   In the photoelectric conversion device 2, the photoelectric conversion element 7 and the bent portion 10c of the frame body 10 are provided close to each other, and the heat around the photoelectric conversion element 7 is transferred to the frame body 10 through the bent portion 10c. Heat can be conducted to the outside efficiently.

また、光電変換素子7と導電層6とを電気的に接続している導電性ワイヤが、光電変換素子7の受光面8の外周に形成されている場合には、光電変換素子7への入射光が導電性ワイヤ部での光反射による光の損失を抑制することができ、集光効率を向上することができる。   Further, when the conductive wire that electrically connects the photoelectric conversion element 7 and the conductive layer 6 is formed on the outer periphery of the light receiving surface 8 of the photoelectric conversion element 7, the incident light is incident on the photoelectric conversion element 7. Light loss due to light reflection at the conductive wire portion can be suppressed, and light collection efficiency can be improved.

<変形例4>
また、図8のように、素子搭載基板5に設けられた凹部30の内部に光電変換素子7を搭載する構成としてもよい。光電変換素子7が素子搭載基板5の凹部30に光電変換素子7が設けられているので、光電変換素子7は導電性部材11との距離が短くなり、熱導電性部材11への熱伝導性を向上することができ、枠体10に伝導する熱量を低減することができる。結果として、光電変換素子7の周辺の熱が、枠体10及び導電性部材11に効率よく熱伝導し外部に放熱することができ、素子搭載基板5の温度上昇を抑制にすることができる。
<Modification 4>
Further, as shown in FIG. 8, the photoelectric conversion element 7 may be mounted inside the recess 30 provided in the element mounting substrate 5. Since the photoelectric conversion element 7 is provided in the recess 30 of the element mounting substrate 5, the distance between the photoelectric conversion element 7 and the conductive member 11 becomes short, and the thermal conductivity to the thermal conductive member 11 is reduced. The amount of heat conducted to the frame body 10 can be reduced. As a result, the heat around the photoelectric conversion element 7 can be efficiently conducted to the frame 10 and the conductive member 11 to be radiated to the outside, and the temperature rise of the element mounting substrate 5 can be suppressed.

また、この構成とすることにより、枠体10が、屈曲部10cを有する形状を不要とする構成とすることができるので、枠体10の構造が簡素化され、製造プロセスを削減することができる。   Further, by adopting this configuration, the frame 10 can be configured so as not to require the shape having the bent portion 10c, so that the structure of the frame 10 is simplified and the manufacturing process can be reduced. .

<変形例5>
上記実施形態に係る光電変換装置2は、集光部材9が平板形状で構成されているが、これに限らない。図9に示すように、集光部材9が、角錐台形状を有し、光電変換素子9に近接する構成としてもよい。集光部材9が、光電変換素子9に近接して設けられるため、光電変換装置2は、集光部材9から光電変換素子7への集光効率を向上することができる。また、集光部材9の光電変換素子9と対向する下面部の領域が、平面透視したときに、光電変換素子7の受光面8の領域に合わせて形成されているので、集光部材9の下面部から光電変換素子7の受光面8へ照射される照射光の集光性を向上させることができる。
<Modification 5>
In the photoelectric conversion device 2 according to the above-described embodiment, the condensing member 9 is configured in a flat plate shape, but is not limited thereto. As shown in FIG. 9, the condensing member 9 may have a truncated pyramid shape and be close to the photoelectric conversion element 9. Since the condensing member 9 is provided close to the photoelectric conversion element 9, the photoelectric conversion device 2 can improve the light condensing efficiency from the condensing member 9 to the photoelectric conversion element 7. Moreover, since the area | region of the lower surface part which opposes the photoelectric conversion element 9 of the condensing member 9 is formed according to the area | region of the light-receiving surface 8 of the photoelectric conversion element 7 when planarly seen, The condensing property of the irradiation light irradiated from the lower surface portion to the light receiving surface 8 of the photoelectric conversion element 7 can be improved.

また、集光部材9は、断面視したときに、集光部材9の側面の傾斜角度を枠体10の傾斜部10aに合わせて形成されているので、集光部材9と枠体10を滑らかに接合することができる。   Moreover, since the condensing member 9 is formed by matching the inclination angle of the side surface of the condensing member 9 with the inclined portion 10a of the frame body 10 when viewed in cross section, the condensing member 9 and the frame body 10 are smooth. Can be joined.

また、集光部材9に入射された光は、集光部材9で反射を繰り返しながら集光部材9の上面部から下面部へ進み、集光部材9の下面部から光電変換素子7の受光面8に入射される。集光部材9からの漏れ光は、集光部材9に接合された枠体10の傾斜部10aで反射されるので、光電変換装置2は集光効率の低下を抑制することができる。   Further, the light incident on the light collecting member 9 proceeds from the upper surface portion of the light collecting member 9 to the lower surface portion while being repeatedly reflected by the light collecting member 9, and the light receiving surface of the photoelectric conversion element 7 from the lower surface portion of the light collecting member 9. 8 is incident. Since the leaked light from the condensing member 9 is reflected by the inclined portion 10a of the frame 10 joined to the condensing member 9, the photoelectric conversion device 2 can suppress a decrease in condensing efficiency.

また、集光部材9は、枠体10の形状に合わせて、例えば、枠体10が、平面透視したときに、矩形状で有れば、矩形状の角錐台形状に、円形状で有れば、円形状の円錐台形状で構成される。また、集光部材9は、集光部材9の側面部で枠体10の傾斜部10aと接合されているが、枠体10の傾斜部10aは、集光部材9の上面部まで延在して集光部材9と接合してもよい。   Further, the light condensing member 9 may be formed in a circular shape in the shape of a rectangular truncated pyramid if the light collecting member 9 has a rectangular shape, for example, when the frame body 10 is seen through a plane in accordance with the shape of the frame body 10. For example, it has a circular truncated cone shape. In addition, the light collecting member 9 is joined to the inclined portion 10 a of the frame body 10 at the side surface portion of the light collecting member 9, but the inclined portion 10 a of the frame body 10 extends to the upper surface portion of the light collecting member 9. Then, the light collecting member 9 may be joined.

<変形例6>
また、図10のように、集光部材9が、角錐台形状を有し、光電変換素子9に近接して設け、枠体10の傾斜部10aの一部と接合する構成としてもよい。集光部材9が、枠体10の傾斜部10aの一部と接合されているので、枠体10から集光部材9に対する圧縮応力を緩和することができる。光電変換装置2は、枠体10から集光部材9への圧縮応力が低減され、集光部材9の屈折率の変化による光電変換素子7の受光面8への照射光の位置ずれを抑制することができ、集光性を向上することができる。
<Modification 6>
Further, as shown in FIG. 10, the condensing member 9 may have a truncated pyramid shape, be provided close to the photoelectric conversion element 9, and be joined to a part of the inclined portion 10 a of the frame body 10. Since the condensing member 9 is joined to a part of the inclined portion 10a of the frame body 10, the compressive stress from the frame body 10 to the condensing member 9 can be relieved. In the photoelectric conversion device 2, the compressive stress from the frame body 10 to the light collecting member 9 is reduced, and the displacement of the irradiation light on the light receiving surface 8 of the photoelectric conversion element 7 due to the change in the refractive index of the light collecting member 9 is suppressed. It is possible to improve the light collecting property.

また、集光部材9は、枠体10の傾斜部10aと空隙を介して、枠体10の傾斜部10aの一部と接合されているので、枠体10からの熱伝導が低減される。光電変換装置2は、枠体10からの熱による集光部材9の位置すれを抑制することができ、集光性を向上することができる。   Moreover, since the condensing member 9 is joined to a part of the inclined portion 10a of the frame body 10 via the inclined portion 10a of the frame body 10 and a gap, heat conduction from the frame body 10 is reduced. The photoelectric conversion device 2 can suppress the displacement of the light collecting member 9 due to heat from the frame body 10 and can improve the light collecting property.

また、集光部材9からの漏れ光は、集光部材9に接合された枠体10の傾斜部10aで反射されるので、光電変換装置2は集光効率の低下を抑制することができる。   Moreover, since the leak light from the condensing member 9 is reflected by the inclined portion 10a of the frame body 10 joined to the condensing member 9, the photoelectric conversion device 2 can suppress a decrease in condensing efficiency.

1 光電変換モジュール
2 光電変換装置
3 受光部材
3a フレーム部材
3b レンズ部材
4 外部基板
5 素子搭載基板
5a 第1の素子搭載基板
5b 第2の素子搭載基板
6 導電層
7 光電変換素子
8 受光面
9 集光部材
10 枠体
10a 傾斜部
10b 延在部
10c 屈曲部
11 導電性部材
11a 第1の導電性部材
11b 第2の導電性部材
20 空間
30 凹部
40 光入射部
DESCRIPTION OF SYMBOLS 1 Photoelectric conversion module 2 Photoelectric conversion apparatus 3 Light receiving member 3a Frame member 3b Lens member 4 External substrate 5 Element mounting substrate 5a First element mounting substrate 5b Second element mounting substrate 6 Conductive layer 7 Photoelectric conversion element 8 Light receiving surface 9 Collection Optical member 10 Frame body 10a Inclined portion 10b Extended portion 10c Bending portion 11 Conductive member 11a First conductive member 11b Second conductive member 20 Space 30 Recess 40 Light incident portion

Claims (7)

素子搭載基板と、
前記素子搭載基板の上面の中央領域に設けられる光電変換素子と、
前記素子搭載基板の上面に設けられ、前記光電変換素子を取り囲むとともに、下部が前記中央領域から前記中央領域の外周に位置する周辺領域に向かって延在して前記素子搭載基板の上面と接合される枠体と、
前記枠体の上部と接合されるとともに、前記光電変換素子と重なる領域に設けられる集光部材と、
前記素子搭載基板の下面に設けられ、平面透視して前記枠体と重なる領域に設けられる導電性部材と、を備え、
前記枠体と前記導電性部材の熱膨張係数が、前記素子搭載基板の熱膨張係数よりも大きいことを特徴とする光電変換装置。
An element mounting substrate;
A photoelectric conversion element provided in a central region of the upper surface of the element mounting substrate;
Provided on the upper surface of the element mounting substrate, surrounds the photoelectric conversion element, and a lower portion extends from the central region toward a peripheral region located on an outer periphery of the central region, and is joined to the upper surface of the element mounting substrate. A frame and
A condensing member that is joined to the upper portion of the frame and provided in a region overlapping with the photoelectric conversion element;
A conductive member provided on a lower surface of the element mounting substrate and provided in a region seen from a plane and overlapping the frame body,
The photoelectric conversion device, wherein a thermal expansion coefficient of the frame body and the conductive member is larger than a thermal expansion coefficient of the element mounting substrate.
請求項1に記載の光電変換装置であって、
前記枠体の下部は、前記中央領域から前記周辺領域の全方位に向かって延在していることを特徴とする光電変換装置。
The photoelectric conversion device according to claim 1,
A lower part of the frame extends from the central region toward all directions of the peripheral region.
請求項1又は請求項2に記載の光電変換装置であって、
前記導電性部材の厚みは、断面視したときに、前記接合領域の前記枠体の厚みよりも厚いことを特徴とする光電変換装置。
The photoelectric conversion device according to claim 1 or 2, wherein
The thickness of the said electroconductive member is thicker than the thickness of the said frame of the said joining area | region when it sees in cross section, The photoelectric conversion apparatus characterized by the above-mentioned.
請求項1乃至又は請求項3に記載の光電変換装置であって、
前記枠体は、鏡面加工された内面を有することを特徴とする光電変換装置。
The photoelectric conversion device according to claim 1, wherein:
The photoelectric conversion device, wherein the frame has a mirror-finished inner surface.
請求項1乃至請求項4のいずれかに記載の光電変換装置であって、
前記枠体は、断面視したときに、前記光電変換素子よりも高い位置で前記光電変換素子の外方に向かって屈曲するとともに前記光電変換素子に近接して設けられる屈曲部を有することを特徴とする光電変換装置。
A photoelectric conversion device according to any one of claims 1 to 4,
The frame body has a bent portion that is bent toward the outside of the photoelectric conversion element at a position higher than the photoelectric conversion element when viewed in cross-section and is provided close to the photoelectric conversion element. A photoelectric conversion device.
請求項1乃至請求項5のいずれかに記載の光電変換装置であって、
前記素子搭載基板は、前記光電変換素子を搭載する凹部を有することを特徴とする光電変換装置。
A photoelectric conversion device according to any one of claims 1 to 5,
The element mounting substrate has a recess for mounting the photoelectric conversion element.
請求項1乃至請求項6のいずれかに記載の光電変換装置と、
前記光電変換装置上に設けられ、前記集光部材に光を集める受光部材と、
を備えたことを特徴とする光電変換モジュール。








The photoelectric conversion device according to any one of claims 1 to 6,
A light receiving member provided on the photoelectric conversion device and collecting light on the light collecting member;
A photoelectric conversion module comprising:








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