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JP2011066093A - Imaging unit - Google Patents

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JP2011066093A
JP2011066093A JP2009213781A JP2009213781A JP2011066093A JP 2011066093 A JP2011066093 A JP 2011066093A JP 2009213781 A JP2009213781 A JP 2009213781A JP 2009213781 A JP2009213781 A JP 2009213781A JP 2011066093 A JP2011066093 A JP 2011066093A
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solid
state imaging
imaging device
protective glass
circuit board
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Kazuhiro Yamagata
和広 山形
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Olympus Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To reduce warpage of a solid-state imaging element caused by the difference in thermal contraction after mounting, between a circuit board and the solid-state imaging element. <P>SOLUTION: The imaging unit 1 includes a solid-state imaging element 2, a printed board 3 and a protective glass 4. The protective glass 4 includes a plurality of conducting portions 4c connected electrically to the solid-state imaging element 2, to protect an element surface on a light-receiving portion 2a side of the solid-state imaging element 2, while the rigidity of the solid-state imaging element 2 is reinforced. On the printed board 3, the solid-state imaging element 2, to which the protective glass 4 is fitted, is flip-chip mounted. The thermal contraction force of the printed board 3 becomes weaker than the rigidity of the solid-state imaging element 2 that is reinforced by the protective glass 4. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、CCDまたはCMOS等の固体撮像素子を備えた撮像ユニットに関し、特に、固体撮像素子の反りを低減可能な撮像ユニットの実装構造に関するものである。   The present invention relates to an imaging unit including a solid-state imaging device such as a CCD or a CMOS, and more particularly to an imaging unit mounting structure capable of reducing warpage of the solid-state imaging device.

従来から、デジタルカメラおよびデジタルビデオカメラを始め、被検体の臓器内部を観察するための内視鏡、撮像機能を備えた携帯電話機など、各種態様の電子撮像装置が登場している。電子撮像装置は、CCDまたはCMOSイメージセンサ等の固体撮像素子を備えた撮像ユニットを内蔵し、レンズ等の光学系によって固体撮像素子の受光部に被写体の光学像を結像し、この固体撮像素子の光電変換処理によって被写体の画像データを撮像する。   2. Description of the Related Art Conventionally, various types of electronic imaging devices such as a digital camera and a digital video camera, an endoscope for observing the inside of an organ of a subject, and a mobile phone having an imaging function have appeared. An electronic imaging device includes an imaging unit including a solid-state imaging device such as a CCD or CMOS image sensor, and forms an optical image of a subject on a light-receiving portion of the solid-state imaging device by an optical system such as a lens. The image data of the subject is picked up by the photoelectric conversion process.

このような撮像ユニットの固体撮像素子は、一般に、受光部側のサブストレートに形成された複数の電極パッド上に金属バンプが各々固定されたベアチップ状態の素子であり、加熱処理等によって回路基板上にフリップチップ実装され、このような各金属バンプ等を介して回路基板の回路配線と電気的に接続される。また、このように固体撮像素子を実装後の回路基板には、この固体撮像素子の受光部を覆うように保護ガラスが接着剤等によって取り付けられる。この結果、回路基板上の固体撮像素子の受光部は、この保護ガラスの内側に封止される。   A solid-state image sensor of such an image pickup unit is generally a bare chip state element in which metal bumps are respectively fixed on a plurality of electrode pads formed on a substrate on the light receiving unit side, and is heated on a circuit board by a heat treatment or the like. Are flip-chip mounted and electrically connected to the circuit wiring of the circuit board through the metal bumps. In addition, a protective glass is attached to the circuit board after mounting the solid-state image pickup device with an adhesive or the like so as to cover the light receiving portion of the solid-state image pickup device. As a result, the light receiving portion of the solid-state imaging device on the circuit board is sealed inside the protective glass.

なお、このような撮像ユニットの従来例として、固体撮像素子チップを保護する保護キャップと同じ熱膨張係数の基板上に固体撮像素子チップを搭載し、このような保護キャップと基板との間に固体撮像素子チップを挟んだ態様で封止樹脂によってこれらを封止してなる固体撮像装置がある(特許文献1参照)。   As a conventional example of such an imaging unit, a solid-state imaging device chip is mounted on a substrate having the same thermal expansion coefficient as that of a protective cap that protects the solid-state imaging device chip, and a solid state is provided between the protective cap and the substrate. There is a solid-state imaging device in which these are sealed with a sealing resin with an imaging element chip interposed therebetween (see Patent Document 1).

特開2002−76313号公報JP 2002-76313 A

ところで、フリップチップ実装等の実装技術によって回路基板に固体撮像素子を実装した場合、この実装工程における加熱処理によって、回路基板および固体撮像素子は、共に熱膨張しつつ接合される。その後、このような接合状態の回路基板および固体撮像素子は、常温まで温度低下しつつ、共に熱収縮する。しかしながら、このような回路基板および固体撮像素子の間には熱膨張係数に差があるため、これら両者の熱収縮に差が生じ、これに起因して、実装後の固体撮像素子に反りが発生するという問題点がある。   By the way, when a solid-state image sensor is mounted on a circuit board by a mounting technique such as flip-chip mounting, the circuit board and the solid-state image sensor are bonded together while thermally expanding by heat treatment in this mounting process. Thereafter, the circuit board and the solid-state imaging device in such a bonded state are both thermally contracted while the temperature is lowered to room temperature. However, there is a difference in thermal expansion coefficient between such a circuit board and a solid-state image sensor, resulting in a difference in thermal contraction between the two, resulting in warping of the solid-state image sensor after mounting. There is a problem of doing.

上述した固体撮像素子の反りは、固体撮像素子の受光部の平坦性を損なって被写体に焦点を合わせ難くなる等の固体撮像素子の撮像機能低下を招来する可能性がある。また、このような固体撮像素子の反りに起因する問題は、固体撮像素子の大型化および薄型化に伴って一層顕著になる。   The warp of the solid-state image sensor described above may cause a decrease in the imaging function of the solid-state image sensor, such as impairing the flatness of the light receiving unit of the solid-state image sensor and making it difficult to focus on the subject. In addition, problems caused by such warpage of the solid-state imaging device become more conspicuous as the solid-state imaging device becomes larger and thinner.

なお、上述した特許文献1に記載の固体撮像装置では、配線基板と固体撮像素子チップとが電気的接合のためのバンプを介して接触した状態で樹脂封止されるので、この配線基板の熱収縮が固体撮像素子チップに作用してしまい、この結果、配線基板の熱収縮に起因する固体撮像素子チップの反りを低減することは困難である。   In the solid-state imaging device described in Patent Document 1 described above, the wiring board and the solid-state imaging element chip are resin-sealed in a state of being in contact with each other via bumps for electrical joining. The contraction acts on the solid-state image sensor chip, and as a result, it is difficult to reduce the warpage of the solid-state image sensor chip due to the thermal contraction of the wiring board.

本発明は、上記事情に鑑みてなされたものであって、実装後の回路基板と固体撮像素子との熱収縮差に起因する固体撮像素子の反りを低減することができる撮像ユニットを提供することを目的とする。   The present invention has been made in view of the above circumstances, and provides an imaging unit capable of reducing the warpage of a solid-state image sensor due to a thermal contraction difference between a mounted circuit board and the solid-state image sensor. With the goal.

上述した課題を解決し、目的を達成するために、本発明にかかる撮像ユニットは、固体撮像素子と、前記固体撮像素子と電気的に接続される複数の導電部を有し、前記固体撮像素子の受光部側の素子面を保護するとともに前記固体撮像素子の剛性を補強する保護ガラスと、前記固体撮像素子の受光部に対応する開口部が形成され、前記受光部と前記開口部とを対向させた態様で前記複数の導電部を介して前記固体撮像素子と電気的に接続される回路基板と、を備え、前記回路基板の熱収縮力は、前記保護ガラスによって補強された前記固体撮像素子の剛性に比して弱いことを特徴とする。   In order to solve the above-described problems and achieve the object, an imaging unit according to the present invention includes a solid-state imaging device and a plurality of conductive portions electrically connected to the solid-state imaging device, and the solid-state imaging device. A protective glass that protects the element surface on the light receiving part side and reinforces the rigidity of the solid-state imaging element, and an opening corresponding to the light-receiving part of the solid-state imaging element is formed, and the light receiving part and the opening are opposed to each other A circuit board that is electrically connected to the solid-state imaging device via the plurality of conductive portions in a manner that is made to be, and the thermal contraction force of the circuit board is reinforced by the protective glass It is characterized in that it is weaker than the rigidity.

また、本発明にかかる撮像ユニットは、上記の発明において、前記固体撮像素子の熱膨張係数は、前記保護ガラスの熱膨張係数と同じであることを特徴とする。   In the imaging unit according to the present invention, the thermal expansion coefficient of the solid-state imaging device is the same as the thermal expansion coefficient of the protective glass.

また、本発明にかかる撮像ユニットは、上記の発明において、前記保護ガラスは、前記受光部との接触を回避する凹部が形成されたガラス部材であることを特徴とする。   In the imaging unit according to the present invention as set forth in the invention described above, the protective glass is a glass member in which a concave portion that avoids contact with the light receiving portion is formed.

また、本発明にかかる撮像ユニットは、上記の発明において、前記保護ガラスには、前記複数の導電部を配置する複数の貫通孔が形成され、前記導電部は、前記複数の貫通孔に充填される複数の導電性充填部材と、前記導電性充填部材と前記回路基板とを電気的に接続する複数の突起電極と、を備えたことを特徴とする。   In the imaging unit according to the present invention, in the above invention, the protective glass is formed with a plurality of through holes in which the plurality of conductive portions are arranged, and the conductive portions are filled in the plurality of through holes. A plurality of conductive filling members, and a plurality of protruding electrodes that electrically connect the conductive filling members and the circuit board.

また、本発明にかかる撮像ユニットは、上記の発明において、前記保護ガラスは、前記固体撮像素子と前記回路基板との間に介在することを特徴とする。   In the imaging unit according to the present invention, the protective glass is interposed between the solid-state imaging device and the circuit board.

本発明にかかる撮像ユニットでは、固体撮像素子と電気的に接続される複数の導電部を有して前記固体撮像素子の受光部側の素子面を保護する保護ガラスを前記固体撮像素子に取り付けて前記固体撮像素子の剛性を補強し、前記受光部と開口部とを対向させた態様で前記複数の導電部を介して前記固体撮像素子と電気的に接続される回路基板の熱収縮力が、前記保護ガラスによって補強された前記固体撮像素子の剛性に比して弱くなるようにしている。このため、実装後の回路基板と固体撮像素子との熱収縮差に起因する固体撮像素子の反りを低減できるという効果を奏する。   In the imaging unit according to the present invention, a protective glass having a plurality of conductive portions electrically connected to the solid-state imaging device and protecting the element surface on the light-receiving portion side of the solid-state imaging device is attached to the solid-state imaging device. Reinforcing the rigidity of the solid-state imaging device, the thermal contraction force of the circuit board that is electrically connected to the solid-state imaging device through the plurality of conductive portions in a mode in which the light receiving portion and the opening are opposed to each other, The rigidity of the solid-state imaging device reinforced by the protective glass is weakened. For this reason, there exists an effect that the curvature of the solid-state image sensor resulting from the thermal contraction difference of the circuit board after mounting and a solid-state image sensor can be reduced.

図1は、本発明の実施の形態にかかる撮像ユニットの一構成例を示す断面模式図である。FIG. 1 is a schematic cross-sectional view illustrating a configuration example of an imaging unit according to an embodiment of the present invention. 図2は、本発明の実施の形態にかかる撮像ユニットの製造方法の一例を示すフローチャートである。FIG. 2 is a flowchart illustrating an example of a manufacturing method of the imaging unit according to the embodiment of the present invention. 図3は、固体撮像素子の受光部側素子面に保護ガラスを取り付ける状態を示す模式図である。FIG. 3 is a schematic diagram illustrating a state in which a protective glass is attached to the light receiving unit side element surface of the solid-state imaging element. 図4は、固体撮像素子に取り付けた保護ガラスに複数の導電部を形成する状態を示す模式図である。FIG. 4 is a schematic diagram showing a state in which a plurality of conductive portions are formed on the protective glass attached to the solid-state imaging device. 図5は、プリント基板に保護ガラス付の固体撮像素子をフリップチップ実装する状態を示す模式図である。FIG. 5 is a schematic diagram showing a state in which a solid-state imaging device with a protective glass is flip-chip mounted on a printed circuit board. 図6は、保護ガラスによる固体撮像素子の剛性補強によって固体撮像素子の反りを低減する状態を示す模式図である。FIG. 6 is a schematic diagram illustrating a state in which the warpage of the solid-state image sensor is reduced by reinforcing the rigidity of the solid-state image sensor with the protective glass. 図7は、本発明の実施の形態にかかる撮像ユニットにおける導電部の変形例1の要部断面を示す模式図である。FIG. 7 is a schematic diagram illustrating a cross-section of the main part of Modification Example 1 of the conductive part in the imaging unit according to the embodiment of the present invention. 図8は、本発明の実施の形態にかかる撮像ユニットにおける導電部の変形例2の要部断面を示す模式図である。FIG. 8 is a schematic diagram illustrating a cross-section of the main part of Modification Example 2 of the conductive part in the imaging unit according to the embodiment of the present invention.

以下に、本発明にかかる撮像ユニットの実施の形態を図面に基づいて詳細に説明する。なお、以下では、本発明にかかる撮像ユニットの一例として、回路基板にフリップチップ実装した固体撮像素子を備える撮像ユニットを例示するが、この実施の形態によって本発明が限定されるものではない。   Hereinafter, embodiments of an imaging unit according to the present invention will be described in detail with reference to the drawings. Hereinafter, as an example of the imaging unit according to the present invention, an imaging unit including a solid-state imaging device flip-chip mounted on a circuit board is illustrated, but the present invention is not limited to this embodiment.

(実施の形態)
図1は、本発明の実施の形態にかかる撮像ユニットの一構成例を示す断面模式図である。図1に示すように、この実施の形態にかかる撮像ユニット1は、被写体の画像を撮像する固体撮像素子2と、固体撮像素子2をフリップチップ実装するプリント基板3と、この固体撮像素子2の剛性を補強するとともに受光部2aを保護する保護ガラス4と、固体撮像素子2とプリント基板3との実装強度を補強する接着剤5と、を備える。
(Embodiment)
FIG. 1 is a schematic cross-sectional view illustrating a configuration example of an imaging unit according to an embodiment of the present invention. As shown in FIG. 1, an imaging unit 1 according to this embodiment includes a solid-state imaging device 2 that captures an image of a subject, a printed circuit board 3 on which the solid-state imaging device 2 is flip-chip mounted, and the solid-state imaging device 2. A protective glass 4 that reinforces the rigidity and protects the light receiving portion 2 a and an adhesive 5 that reinforces the mounting strength between the solid-state imaging device 2 and the printed circuit board 3 are provided.

固体撮像素子2は、CCDまたはCMOSイメージセンサ等に例示されるベアチップ状の半導体素子であり、被写体からの光を受光してこの被写体の画像を撮像する撮像機能を有する。具体的には、固体撮像素子2は、サブストレート等のチップ基板上に、被写体からの光を受光する受光部2aと、撮像動作を実行するための駆動回路が形成された駆動回路部2bと、駆動回路部2bと電気的に接続された複数の電極パッド2cとを備える。   The solid-state imaging device 2 is a bare chip-shaped semiconductor device exemplified by a CCD or CMOS image sensor and has an imaging function of receiving light from a subject and capturing an image of the subject. Specifically, the solid-state imaging device 2 includes a light receiving unit 2a that receives light from a subject on a chip substrate such as a substrate, and a drive circuit unit 2b in which a drive circuit for performing an imaging operation is formed. And a plurality of electrode pads 2c electrically connected to the drive circuit portion 2b.

受光部2aは、格子形状等の所定の形状に配置される画素群およびマイクロレンズ等を用いて実現され、固体撮像素子2のチップ基板上に形成される。駆動回路部2bは、このような受光部2aの周辺に形成される。複数の電極パッド2cは、固体撮像素子2のチップ基板に形成された配線(図示せず)を介して駆動回路部2bと電気的に接続される。なお、これら複数の電極パッド2cは、駆動回路部2bの周辺(例えば対向する2辺または4辺)に形成される。このような複数の電極パッド2cは、後述する保護ガラス4の導電部4cを介してプリント基板3と電気的に接続される。   The light receiving unit 2a is realized using a pixel group and a microlens that are arranged in a predetermined shape such as a lattice shape, and is formed on the chip substrate of the solid-state imaging device 2. The drive circuit unit 2b is formed around the light receiving unit 2a. The plurality of electrode pads 2 c are electrically connected to the drive circuit unit 2 b via wiring (not shown) formed on the chip substrate of the solid-state imaging device 2. The plurality of electrode pads 2c are formed around the drive circuit portion 2b (for example, two or four sides facing each other). Such a plurality of electrode pads 2c are electrically connected to the printed circuit board 3 via a conductive portion 4c of a protective glass 4 described later.

上述したような構成を有する固体撮像素子2は、図1に示すように、保護ガラス4によって受光部2aおよび駆動回路部2bを保護された状態でプリント基板3の開口部3aと受光部2aとを対向させてプリント基板3上にフリップチップ実装される。このフリップチップ実装によって、固体撮像素子2の複数の電極パッド2cは、保護ガラス4の導電部4cを介してプリント基板3の配線層3bと電気的に接続される。このようにプリント基板3に実装された固体撮像素子2において、受光部2aは、プリント基板3の開口部3aおよび保護ガラス4を通過した被写体からの光を受光し、この受光した光を光電変換処理する。駆動回路部2bは、受光部2aによって光電変換処理された信号をもとに被写体の画像信号を生成し、この生成した画像信号を複数の電極パッド2c等を介してプリント基板3の配線層3bに出力する。   As shown in FIG. 1, the solid-state imaging device 2 having the above-described configuration includes the opening 3 a and the light receiving unit 2 a of the printed circuit board 3 in a state where the light receiving unit 2 a and the drive circuit unit 2 b are protected by the protective glass 4. Are flip-chip mounted on the printed circuit board 3. By this flip chip mounting, the plurality of electrode pads 2 c of the solid-state imaging device 2 are electrically connected to the wiring layer 3 b of the printed circuit board 3 through the conductive portion 4 c of the protective glass 4. In the solid-state imaging device 2 thus mounted on the printed circuit board 3, the light receiving unit 2a receives light from the subject that has passed through the opening 3a and the protective glass 4 of the printed circuit board 3, and photoelectrically converts the received light. Process. The drive circuit unit 2b generates an image signal of a subject based on the signal photoelectrically processed by the light receiving unit 2a, and the generated image signal is transmitted to the wiring layer 3b of the printed circuit board 3 through the plurality of electrode pads 2c and the like. Output to.

プリント基板3は、上述した固体撮像素子2の撮像機能を実現するための回路が形成された多層回路基板である。具体的には、図1に示すように、プリント基板3は、固体撮像素子2の撮像機能を実現するために必要な回路配線等がパターン形成された配線層3bを備える。また、プリント基板3の多層構造内には、上述した固体撮像素子2の受光部2aに対応する開口部3aが形成される。   The printed board 3 is a multilayer circuit board on which a circuit for realizing the imaging function of the solid-state imaging device 2 described above is formed. Specifically, as shown in FIG. 1, the printed circuit board 3 includes a wiring layer 3 b in which circuit wiring and the like necessary for realizing the imaging function of the solid-state imaging device 2 are patterned. Further, in the multilayer structure of the printed circuit board 3, an opening 3 a corresponding to the light receiving portion 2 a of the solid-state imaging device 2 described above is formed.

開口部3aは、固体撮像素子2の受光部2aに対応して設計された開口寸法を有し、この受光部2aに対する被写体からの光の入射を可能にする。配線層3bは、上述したように固体撮像素子2の撮像機能を実現するために必要な回路配線等がパターン形成された導電層である。特に図1に図示しないが、この配線層3bには、固体撮像素子2上の保護ガラス4における複数の導電部4cに対応する複数の電極パッドが形成される。このような配線層3bの各電極パッドには、熱圧着技術または超音波接続技術等によって、これら複数の導電部4cの各突起電極4eが各々接続される。   The opening 3a has an opening dimension designed to correspond to the light receiving part 2a of the solid-state imaging device 2, and allows light from a subject to enter the light receiving part 2a. The wiring layer 3b is a conductive layer in which circuit wiring and the like necessary for realizing the imaging function of the solid-state imaging device 2 are patterned as described above. Although not particularly shown in FIG. 1, a plurality of electrode pads corresponding to the plurality of conductive portions 4 c in the protective glass 4 on the solid-state imaging device 2 are formed on the wiring layer 3 b. The protruding electrodes 4e of the plurality of conductive parts 4c are connected to the electrode pads of the wiring layer 3b by a thermocompression bonding technique or an ultrasonic connection technique, respectively.

なお、上述したような多層構造のプリント基板3は、外力の印加によって容易に変形可能である柔軟なフレキシブル回路基板であってもよいし、フレキシブル回路基板に比して変形し難いリジッド回路基板であってもよい。また、図1には、この実施の形態にかかる撮像ユニット1の一部分、具体的には固体撮像素子2およびその近傍が図示されている。すなわち、上述したプリント基板3の外形は、プレート状または帯状等の所望の外形に設計される。   The printed circuit board 3 having the multilayer structure as described above may be a flexible flexible circuit board that can be easily deformed by application of external force, or a rigid circuit board that is not easily deformed as compared with the flexible circuit board. There may be. FIG. 1 shows a part of the imaging unit 1 according to this embodiment, specifically, the solid-state imaging device 2 and the vicinity thereof. That is, the external shape of the printed circuit board 3 described above is designed to have a desired external shape such as a plate shape or a belt shape.

保護ガラス4は、プリント基板3に実装される固体撮像素子2の受光部2a側の素子面を保護するとともに固体撮像素子2の剛性を補強するための透光性部材(より詳細には透明なガラス部材)であり、固体撮像素子2の受光部2aへの透光性および固体撮像素子2とプリント基板3との電気的接続を損なうことなく固体撮像素子2の受光部2aを封止する。具体的には、保護ガラス4は、固体撮像素子2と電気的に接続される複数の導電部4cを有する。また、保護ガラス4には、固体撮像素子2の受光部2aとの接触を回避する凹部4aと、これら複数の導電部4cを形成するための複数の貫通孔4bとが形成される。   The protective glass 4 protects the element surface on the light receiving unit 2a side of the solid-state imaging device 2 mounted on the printed circuit board 3 and reinforces the rigidity of the solid-state imaging device 2 (more specifically, a transparent member). Glass member) and seals the light-receiving portion 2a of the solid-state image pickup device 2 without impairing the translucency to the light-receiving portion 2a of the solid-state image pickup device 2 and the electrical connection between the solid-state image pickup device 2 and the printed circuit board 3. Specifically, the protective glass 4 has a plurality of conductive portions 4 c that are electrically connected to the solid-state imaging device 2. Further, the protective glass 4 is formed with a recess 4a that avoids contact with the light receiving portion 2a of the solid-state imaging device 2, and a plurality of through holes 4b for forming the plurality of conductive portions 4c.

凹部4aは、固体撮像素子2に固定する保護ガラス4と受光部2aとの接触を回避するために保護ガラス4に形成される。ここで、上述した固体撮像素子2において、受光部2aおよび駆動回路部2bは、例えば図1に示すようにシリコン基板上に少々突起している。凹部4aの形成サイズは、受光部2aおよび駆動回路部2bの突起範囲および突起高さを考慮して設定される。このような凹部4aを有する保護ガラス4は、図1に示すように、固体撮像素子2の受光部2a側の素子面に取り付けられた場合、凹部4aの内部に受光部2aおよび駆動回路部2bを収容して、これら両者との接触を回避する。この場合、固体撮像素子2の受光部2aおよび駆動回路部2bは、保護ガラス4の凹部4a内に気密封止される。   The concave portion 4a is formed in the protective glass 4 in order to avoid contact between the protective glass 4 fixed to the solid-state imaging device 2 and the light receiving portion 2a. Here, in the solid-state imaging device 2 described above, the light receiving portion 2a and the drive circuit portion 2b are slightly projected on the silicon substrate, for example, as shown in FIG. The formation size of the recess 4a is set in consideration of the protrusion range and the protrusion height of the light receiving portion 2a and the drive circuit portion 2b. When the protective glass 4 having such a recess 4a is attached to the element surface of the solid-state imaging device 2 on the light receiving portion 2a side, as shown in FIG. 1, the light receiving portion 2a and the drive circuit portion 2b are placed inside the recess 4a. To avoid contact with both. In this case, the light receiving unit 2 a and the drive circuit unit 2 b of the solid-state imaging device 2 are hermetically sealed in the recess 4 a of the protective glass 4.

貫通孔4bは、固体撮像素子2とプリント基板3とを電気的に接続する導電部4cを配置するためのものであり、プリント基板3の配線層3b上の電極パッド(図示せず)の配置に対応して保護ガラス4に複数形成される。これら複数の貫通孔4bは、固体撮像素子2の受光部2a側の素子面に保護ガラス4を固定した場合に、この固体撮像素子2における複数の電極パッド2cに通じる。   The through-hole 4b is for arranging a conductive portion 4c that electrically connects the solid-state imaging device 2 and the printed board 3, and arrangement of electrode pads (not shown) on the wiring layer 3b of the printed board 3 A plurality of protective glasses 4 are formed correspondingly. The plurality of through holes 4 b communicate with the plurality of electrode pads 2 c in the solid-state imaging device 2 when the protective glass 4 is fixed to the element surface on the light receiving unit 2 a side of the solid-state imaging device 2.

導電部4cは、固体撮像素子2とプリント基板3とを電気的に接続するためのものであり、上述した複数の貫通孔4bに対応して保護ガラス4に設けられる。具体的には、複数の導電部4cの各々は、図1に示すように、貫通孔4bに充填される導電性充填材4dと配線層3bに接合される突起電極4eとを備える。   The conductive portion 4c is for electrically connecting the solid-state imaging device 2 and the printed circuit board 3, and is provided on the protective glass 4 corresponding to the plurality of through holes 4b described above. Specifically, as shown in FIG. 1, each of the plurality of conductive portions 4c includes a conductive filler 4d filled in the through hole 4b and a protruding electrode 4e joined to the wiring layer 3b.

導電性充填材4dは、銀等の金属ペーストに例示される導電性の部材であり、固体撮像素子2に取り付けられた保護ガラス4の各貫通孔4bに充填される。この場合、導電性充填材4dは、貫通孔4bの底部をなす固体撮像素子2の電極パッド2cを貫通孔4b内に埋没させ且つ突起電極4eの外形サイズ以上の凹みを貫通孔4b内に形成しない程度に充填される。導電性充填材4dは、その露出面上に取り付けられた突起電極4eと固体撮像素子2の電極パッド2cとを電気的に接続する。   The conductive filler 4 d is a conductive member exemplified by a metal paste such as silver, and is filled in each through-hole 4 b of the protective glass 4 attached to the solid-state imaging device 2. In this case, the conductive filler 4d embeds the electrode pad 2c of the solid-state imaging device 2 forming the bottom of the through-hole 4b in the through-hole 4b and forms a recess in the through-hole 4b that is larger than the outer size of the protruding electrode 4e. Filled to the extent that it does not. The conductive filler 4d electrically connects the protruding electrode 4e attached on the exposed surface and the electrode pad 2c of the solid-state imaging device 2.

複数の突起電極4eは、上述したように保護ガラス4の複数の貫通孔4bに充填された各導電性充填材4dの露出面に固定され、導電性充填材4dとプリント基板3とを電気的に接続する。具体的には、複数の突起電極4eは、プリント基板3の配線層3bに形成された複数の電極パッド(図示せず)に接合され、この配線層3bと導電性充填材4dとを電気的に接続する。なお、突起電極4eは、ワイヤボンディング方式によって形成された金または銅等のスタッドバンプであってもよいし、めっき方式によって形成された金、銀、銅、インジウムまたは半田等の金属バンプであってもよい。また、突起電極4eは、金属ボールまたは表面に金属めっきを施した樹脂ボールであってもよいし、印刷等によってパターン形成された導電性接着剤であってもよい。   The plurality of protruding electrodes 4e are fixed to the exposed surfaces of the respective conductive fillers 4d filled in the plurality of through holes 4b of the protective glass 4 as described above, and electrically connect the conductive fillers 4d and the printed board 3 to each other. Connect to. Specifically, the plurality of protruding electrodes 4e are bonded to a plurality of electrode pads (not shown) formed on the wiring layer 3b of the printed circuit board 3, and the wiring layer 3b and the conductive filler 4d are electrically connected. Connect to. The protruding electrode 4e may be a gold or copper stud bump formed by a wire bonding method, or a metal bump such as gold, silver, copper, indium or solder formed by a plating method. Also good. Further, the protruding electrode 4e may be a metal ball or a resin ball having a surface plated with metal, or a conductive adhesive patterned by printing or the like.

ここで、このような構成を有する保護ガラス4は、所定の厚みに形成されたに酸化ケイ素等を主成分とするガラス部材であり、シリコンを主成分とする半導体チップである固体撮像素子2と略同じ熱膨張係数を有する。このような保護ガラス4は、図1に示すように固体撮像素子2の受光部2a側素子面に取り付けられることによって、双方の間において剥離を招来する程の熱膨張係数差(熱膨張差および熱収縮差)を生じることなく、この固体撮像素子2の剛性を補強する。この場合、保護ガラス4は、固体撮像素子2の剛性をプリント基板3の熱収縮力に比して強い剛性に補強する。すなわち、上述したプリント基板3の熱収縮力は、保護ガラス4によって補強された固体撮像素子2の剛性に比して弱い。なお、保護ガラス4によって補強された固体撮像素子2の剛性は、固体撮像素子2の剛性と保護ガラス4の剛性とを加算した総合的な剛性である。   Here, the protective glass 4 having such a configuration is a glass member having silicon oxide or the like as a main component formed in a predetermined thickness, and a solid-state imaging device 2 that is a semiconductor chip having silicon as a main component. Have approximately the same coefficient of thermal expansion. Such a protective glass 4 is attached to the light receiving unit 2a side element surface of the solid-state imaging device 2 as shown in FIG. 1, thereby causing a thermal expansion coefficient difference (thermal expansion difference and The rigidity of the solid-state imaging device 2 is reinforced without causing a difference in heat shrinkage. In this case, the protective glass 4 reinforces the rigidity of the solid-state imaging device 2 to be stronger than the thermal contraction force of the printed circuit board 3. That is, the thermal contraction force of the printed circuit board 3 described above is weaker than the rigidity of the solid-state imaging device 2 reinforced by the protective glass 4. Note that the rigidity of the solid-state imaging element 2 reinforced by the protective glass 4 is a total rigidity obtained by adding the rigidity of the solid-state imaging element 2 and the rigidity of the protective glass 4.

また、保護ガラス4は、図1に示すように固体撮像素子2とプリント基板3との間に介在し、プリント基板3の開口部3aを介して入射する被写体の光、すなわち固体撮像素子2の受光部2aが受光すべき光を受光部2a側に透過させる。さらに、保護ガラス4は、固体撮像素子2の受光部2a側への異物混入を防止する。なお、保護ガラス4は、固体撮像素子2の受光部2a側の素子面に、接着剤によって接着されてもよいし、双方の接触面に予め形成されたメタライズの加熱処理によって溶着されてもよい。以下、上述したように受光部2a側の素子面に保護ガラス4を固定した状態の固体撮像素子2を保護ガラス付の固体撮像素子2と称する。   Further, as shown in FIG. 1, the protective glass 4 is interposed between the solid-state imaging device 2 and the printed circuit board 3, and the light of the subject incident through the opening 3 a of the printed circuit board 3, that is, the solid-state imaging device 2. The light to be received by the light receiving unit 2a is transmitted to the light receiving unit 2a side. Furthermore, the protective glass 4 prevents foreign matter from entering the light receiving unit 2a side of the solid-state imaging device 2. The protective glass 4 may be adhered to the element surface of the solid-state imaging element 2 on the light receiving portion 2a side by an adhesive, or may be welded by a metallized heat treatment formed in advance on both contact surfaces. . Hereinafter, the solid-state imaging device 2 in a state where the protective glass 4 is fixed to the element surface on the light receiving unit 2a side as described above is referred to as a solid-state imaging device 2 with protective glass.

接着剤5は、このような保護ガラス付の固体撮像素子2とプリント基板3とを確実に固定するためのものである。具体的には、接着剤5は、エポキシ系、フェノール系、シリコン系、ウレタン系またはアクリル系等の絶縁性接着剤である。接着剤5は、図1に示すように、固体撮像素子2の受光部2aとプリント基板3の開口部3aとの間の領域に進入しないように、フリップチップ実装後の保護ガラス付の固体撮像素子2とプリント基板3との間隙に充填される。また、接着剤5は、このプリント基板3上の保護ガラス付の固体撮像素子2の周囲、実際には、この固体撮像素子2上の保護ガラス4の周囲に沿って裾野形状を形成する状態になるまで塗布される。これによって、接着剤5は、この保護ガラス付の固体撮像素子2とプリント基板3との間隙を閉塞する。このように充填および塗布された接着剤5は、加熱処理または紫外線照射処理等によって硬化する。この結果、接着剤5は、保護ガラス付の固体撮像素子2とプリント基板3とを接着してこの保護ガラス付の固体撮像素子2とプリント基板3との実装強度、すなわち保護ガラス4の各突起電極4eとプリント基板3の配線層3bとの接合強度を補強する。さらに、接着剤5は、この保護ガラス付の固体撮像素子2とプリント基板3との間隙を介しての保護ガラス4上面への異物混入および受光部2aへの不要光の入射を防止する。   The adhesive 5 is for securely fixing such a solid-state imaging device 2 with a protective glass and the printed board 3. Specifically, the adhesive 5 is an insulating adhesive such as epoxy, phenol, silicon, urethane, or acrylic. As shown in FIG. 1, the adhesive 5 does not enter the region between the light receiving portion 2 a of the solid-state imaging device 2 and the opening 3 a of the printed circuit board 3, so that the solid-state imaging with protective glass after flip chip mounting is performed. The gap between the element 2 and the printed board 3 is filled. In addition, the adhesive 5 forms a skirt shape around the periphery of the solid-state imaging device 2 with the protective glass on the printed circuit board 3, in practice, along the periphery of the protective glass 4 on the solid-state imaging device 2. It is applied until. As a result, the adhesive 5 closes the gap between the solid-state imaging device 2 with the protective glass and the printed board 3. The adhesive 5 thus filled and applied is cured by heat treatment or ultraviolet irradiation treatment. As a result, the adhesive 5 adheres the solid-state image pickup device 2 with the protective glass and the printed circuit board 3 to the mounting strength between the solid-state image pickup device 2 with the protective glass and the printed circuit board 3, that is, each protrusion of the protective glass 4. The bonding strength between the electrode 4e and the wiring layer 3b of the printed board 3 is reinforced. Further, the adhesive 5 prevents foreign matter from entering the upper surface of the protective glass 4 and the incidence of unnecessary light on the light receiving portion 2a through the gap between the solid-state imaging device 2 with the protective glass and the printed board 3.

なお、接着剤5は、上述した絶縁性接着剤に限定されず、異方導電性接着剤であってもよい。この場合、接着剤5は、上述した保護ガラス付の固体撮像素子2のフリップチップ実装において、保護ガラス付の固体撮像素子2とプリント基板3とを接着するとともに、このフリップチップ実装された保護ガラス付の固体撮像素子2の各突起電極4eとプリント基板3の配線層3bとを各々電気的に接続する。一方、接着剤5が異方導電性接着剤である場合、上述した突起電極4eを用いずに各貫通孔4b内の導電性充填材4dと接着剤5とを直接接触させてもよい。この場合、接着剤5は、保護ガラス付の固体撮像素子2の各貫通孔4b内の導電性充填材4dとプリント基板3の配線層3bとを各々電気的に接続する。また、接着剤5は、上述した熱硬化型のものに限らず、紫外線硬化型の接着剤であってもよい。   Note that the adhesive 5 is not limited to the insulating adhesive described above, and may be an anisotropic conductive adhesive. In this case, the adhesive 5 adheres the solid-state imaging device 2 with protective glass and the printed circuit board 3 in the above-described flip-chip mounting of the solid-state imaging device 2 with protective glass, and the protective glass with the flip-chip mounting. Each protruding electrode 4e of the attached solid-state imaging device 2 and the wiring layer 3b of the printed circuit board 3 are electrically connected to each other. On the other hand, when the adhesive 5 is an anisotropic conductive adhesive, the conductive filler 4d in each through-hole 4b and the adhesive 5 may be brought into direct contact without using the protruding electrode 4e described above. In this case, the adhesive 5 electrically connects the conductive filler 4d in each through-hole 4b of the solid-state imaging device 2 with protective glass and the wiring layer 3b of the printed board 3 respectively. The adhesive 5 is not limited to the thermosetting type described above, but may be an ultraviolet curable adhesive.

つぎに、本発明の実施の形態にかかる撮像ユニット1の製造方法について説明する。図2は、本発明の実施の形態にかかる撮像ユニットの製造方法の一例を示すフローチャートである。図3は、固体撮像素子の受光部側素子面に保護ガラスを取り付ける状態を示す模式図である。図4は、固体撮像素子に取り付けた保護ガラスに複数の導電部を形成する状態を示す模式図である。図5は、プリント基板に保護ガラス付の固体撮像素子をフリップチップ実装する状態を示す模式図である。本発明の実施の形態にかかる撮像ユニット1は、上述した固体撮像素子2とプリント基板3と保護ガラス4とを撮像ユニット1の構成部品として予め準備し、接着剤5等を用いてこれらの各構成部品を組み合わせることによって製造される。   Next, a method for manufacturing the imaging unit 1 according to the embodiment of the present invention will be described. FIG. 2 is a flowchart illustrating an example of a manufacturing method of the imaging unit according to the embodiment of the present invention. FIG. 3 is a schematic diagram illustrating a state in which a protective glass is attached to the light receiving unit side element surface of the solid-state imaging element. FIG. 4 is a schematic diagram showing a state in which a plurality of conductive portions are formed on the protective glass attached to the solid-state imaging device. FIG. 5 is a schematic diagram showing a state in which a solid-state imaging device with a protective glass is flip-chip mounted on a printed circuit board. The imaging unit 1 according to the embodiment of the present invention prepares the solid-state imaging device 2, the printed circuit board 3, and the protective glass 4 in advance as components of the imaging unit 1, and each of these using an adhesive 5 or the like. Manufactured by combining components.

すなわち、図2に示すように、まず、固体撮像素子2に保護ガラス4を取り付ける(ステップS101)。このステップS101において、保護ガラス4は、図3に示すように、固体撮像素子2の受光部2aおよび駆動回路部2bが凹部4a内に収容され且つ固体撮像素子2の各電極パッド2cが各貫通孔4b内に収容される態様で固体撮像素子2の受光部2a側の素子面に接着または溶着される。この時点において、固体撮像素子2の受光部2aおよび駆動回路部2bは、保護ガラス4の凹部4a内に気密封止される。続いて、この固体撮像素子2に取り付けた保護ガラス4の各貫通孔4bに導電性充填材4dを各々充填し、その後、図4に示すように、各貫通孔4b内の導電性充填材4dに突起電極4eを加熱処理または超音波処理等によって各々取り付ける。この結果、固体撮像素子2上の保護ガラス4に複数の導電部4cが形成され、保護ガラス付の固体撮像素子2が製造される。   That is, as shown in FIG. 2, first, the protective glass 4 is attached to the solid-state imaging device 2 (step S101). In this step S101, as shown in FIG. 3, in the protective glass 4, the light receiving part 2a and the drive circuit part 2b of the solid-state image sensor 2 are accommodated in the recesses 4a, and each electrode pad 2c of the solid-state image sensor 2 passes through each of them. It is bonded or welded to the element surface of the solid-state imaging device 2 on the light receiving portion 2a side in a mode of being accommodated in the hole 4b. At this time, the light receiving unit 2 a and the drive circuit unit 2 b of the solid-state imaging device 2 are hermetically sealed in the recess 4 a of the protective glass 4. Subsequently, the conductive filler 4d is filled in each through-hole 4b of the protective glass 4 attached to the solid-state imaging device 2, and then the conductive filler 4d in each through-hole 4b as shown in FIG. The protruding electrode 4e is attached to each by heat treatment or ultrasonic treatment. As a result, a plurality of conductive portions 4c are formed on the protective glass 4 on the solid-state imaging device 2, and the solid-state imaging device 2 with the protective glass is manufactured.

つぎに、ステップS101の工程によって製造された保護ガラス付の固体撮像素子2をプリント基板3にフリップチップ実装する(ステップS102)。このステップS102において、保護ガラス付の固体撮像素子2は、図5に示すように、プリント基板3にフリップチップ実装される。具体的には、プリント基板3は、保護ガラス4を介して固体撮像素子2の受光部2aと開口部3aとを対向させるとともに、この保護ガラス付の固体撮像素子2の各突起電極4eと配線層3b内の各電極パッドとを位置決めされる。続いて、このように位置決めされた各突起電極4eと配線層3bとを仮付けし、この仮付け後の保護ガラス付の固体撮像素子2およびプリント基板3である仮実装体をリフロー炉等の所定の加熱装置に投入し、この加熱装置によってこの仮実装体を加熱処理する。この仮実装体の加熱処理によって、保護ガラス付の固体撮像素子2の各突起電極4eは、プリント基板3の配線層3bに溶着接合され、この結果、保護ガラス付の固体撮像素子2とプリント基板3とのフリップチップ実装が達成される。この場合、保護ガラス付の固体撮像素子2は、保護ガラス4を介してプリント基板3の開口部3aと受光部2aとを対向させた状態でプリント基板3の配線層3bと電気的に接続される。   Next, the solid-state imaging device 2 with the protective glass manufactured by the process of step S101 is flip-chip mounted on the printed circuit board 3 (step S102). In step S102, the solid-state imaging device 2 with protective glass is flip-chip mounted on the printed circuit board 3 as shown in FIG. Specifically, the printed circuit board 3 makes the light receiving portion 2a and the opening 3a of the solid-state image pickup device 2 face each other through the protective glass 4, and the protruding electrodes 4e of the solid-state image pickup device 2 with the protective glass and the wiring. Each electrode pad in the layer 3b is positioned. Subsequently, the protruding electrodes 4e thus positioned and the wiring layer 3b are temporarily attached, and the temporarily mounted solid-state image pickup device 2 with the protective glass and the printed circuit board 3 are temporarily attached to a reflow furnace or the like. It puts into a predetermined heating apparatus, and this temporary mounting body is heat-treated by this heating apparatus. By this heat treatment of the temporary mounting body, each protruding electrode 4e of the solid-state imaging device 2 with the protective glass is welded and joined to the wiring layer 3b of the printed circuit board 3, and as a result, the solid-state imaging device 2 with the protective glass and the printed circuit board. Flip chip mounting with 3 is achieved. In this case, the solid-state imaging device 2 with the protective glass is electrically connected to the wiring layer 3b of the printed board 3 with the opening 3a and the light receiving part 2a of the printed board 3 facing each other with the protective glass 4 interposed therebetween. The

なお、このステップS102における保護ガラス付の固体撮像素子2とプリント基板3との仮実装において、上述した位置決め後の保護ガラス付の固体撮像素子2とプリント基板3とに対して押圧処理または超音波処理等をさらに行って、このプリント基板3の配線層3bに保護ガラス付の固体撮像素子2の各突起電極4eを仮接合してもよい。   In the provisional mounting of the solid-state imaging device 2 with protective glass and the printed circuit board 3 in step S102, a pressing process or ultrasonic waves is applied to the solid-state imaging device 2 with protective glass and the printed circuit board 3 after positioning. The protruding electrodes 4e of the solid-state imaging device 2 with a protective glass may be temporarily joined to the wiring layer 3b of the printed circuit board 3 by further processing.

ここで、このフリップチップ実装後の状態において、保護ガラス付の固体撮像素子2は、保護ガラス4によって補強された剛性によってプリント基板3の熱収縮力に対抗する。この結果、保護ガラス付の固体撮像素子2は、このプリント基板3の熱収縮力に抗して反りを補正するとともに受光部2aを平坦な状態に維持している。   Here, in the state after the flip chip mounting, the solid-state imaging device 2 with the protective glass opposes the thermal contraction force of the printed circuit board 3 due to the rigidity reinforced by the protective glass 4. As a result, the solid-state imaging device 2 with the protective glass corrects the warp against the thermal contraction force of the printed circuit board 3 and maintains the light receiving portion 2a in a flat state.

その後、ステップS102によるフリップチップ実装工程後の保護ガラス付の固体撮像素子2とプリント基板3との間に接着剤5を充填する(ステップS103)。このステップS103において、接着剤5は、受光部2aとプリント基板3の開口部3aとの間の領域に進入しないようにフリップチップ実装後の保護ガラス付の固体撮像素子2とプリント基板3との間隙に充填される。続いて、この保護ガラス付の固体撮像素子2とプリント基板3との間隙を閉塞するまで、この固体撮像素子2上の保護ガラス4の周囲に沿って裾野形状に塗布される(図1参照)。この接着剤5の充填工程によって、保護ガラス付の固体撮像素子2の各突起電極4eとプリント基板3の配線層3bとの接合強度は補強される。なお、接着剤5は、UV照射等によって常温硬化してもよいし、加熱処理によって熱硬化してもよい。   After that, the adhesive 5 is filled between the solid-state imaging device 2 with protective glass and the printed circuit board 3 after the flip chip mounting process in step S102 (step S103). In this step S103, the adhesive 5 does not enter the region between the light receiving portion 2a and the opening 3a of the printed circuit board 3, so that the solid-state imaging device 2 with the protective glass and the printed circuit board 3 after the flip chip mounting are disposed. The gap is filled. Subsequently, it is applied in a skirt shape along the periphery of the protective glass 4 on the solid-state image sensor 2 until the gap between the solid-state image sensor 2 with the protective glass 2 and the printed circuit board 3 is closed (see FIG. 1). . By the filling process of the adhesive 5, the bonding strength between the protruding electrodes 4e of the solid-state imaging device 2 with the protective glass and the wiring layer 3b of the printed board 3 is reinforced. The adhesive 5 may be cured at room temperature by UV irradiation or the like, or may be cured by heat treatment.

上述したステップS101〜S103の各製造工程を順次行うことによって、図1に示した構成を有する撮像ユニット1を製造することができる。このように製造された撮像ユニット1は、デジタルカメラおよびデジタルビデオカメラを始め、被検体の臓器内部を観察するための内視鏡、撮像機能を備えた携帯電話機等、各種態様の電子撮像装置に内蔵することができる。   The imaging unit 1 having the configuration shown in FIG. 1 can be manufactured by sequentially performing the manufacturing steps of steps S101 to S103 described above. The imaging unit 1 manufactured in this manner is used in various types of electronic imaging devices such as a digital camera and a digital video camera, an endoscope for observing the inside of an organ of a subject, and a mobile phone having an imaging function. Can be built in.

つぎに、保護ガラス付の固体撮像素子2の反り低減作用について説明する。図6は、保護ガラスによる固体撮像素子の剛性補強によって固体撮像素子の反りを低減する状態を示す模式図である。この実施の形態にかかる撮像ユニット1における保護ガラス付の固体撮像素子2は、図2に示したステップS102において、プリント基板3が熱膨張する以前に、このプリント基板の配線層3bに仮実装される。その後、この仮実装後の保護ガラス付の固体撮像素子2は、加熱処理によってプリント基板3にフリップチップ実装される。   Next, the warp reducing action of the solid-state imaging device 2 with the protective glass will be described. FIG. 6 is a schematic diagram illustrating a state in which the warpage of the solid-state image sensor is reduced by reinforcing the rigidity of the solid-state image sensor with the protective glass. The solid-state imaging device 2 with the protective glass in the imaging unit 1 according to this embodiment is temporarily mounted on the wiring layer 3b of the printed board before the thermal expansion of the printed board 3 in step S102 shown in FIG. The Thereafter, the solid-state imaging device 2 with the protective glass after the temporary mounting is flip-chip mounted on the printed circuit board 3 by heat treatment.

このステップS102において、プリント基板3は、このような加熱処理によって熱膨張し、その後、常温まで温度低下しつつ熱収縮する。この状態において、このプリント基板3上の保護ガラス付の固体撮像素子2は、プリント基板3の熱膨張力を受け、その後、図6に示すように、このプリント基板3の熱収縮力F1を受ける。ここで、保護ガラス4は、プリント基板3の剛性に比して強い剛性を有し、上述したようにプリント基板3の熱収縮力F1に比して強い剛性に固体撮像素子2の剛性を補強する。このような保護ガラス4は、このプリント基板3の熱収縮力F1に抗して、この自身の剛性に基づいた反作用力F2を固体撮像素子2に作用させる。なお、この反作用力F2は、保護ガラス付の固体撮像素子2に印加されるプリント基板3の熱収縮力F1に対抗する力である。   In this step S102, the printed circuit board 3 is thermally expanded by such heat treatment, and then thermally contracts while the temperature is lowered to room temperature. In this state, the solid-state imaging device 2 with the protective glass on the printed circuit board 3 receives the thermal expansion force of the printed circuit board 3, and then receives the thermal contraction force F1 of the printed circuit board 3 as shown in FIG. . Here, the protective glass 4 has a rigidity higher than that of the printed circuit board 3 and, as described above, reinforces the rigidity of the solid-state imaging device 2 to be stronger than the heat shrinkage force F1 of the printed circuit board 3. To do. Such a protective glass 4 causes the reaction force F2 based on its own rigidity to act on the solid-state imaging device 2 against the thermal contraction force F1 of the printed circuit board 3. The reaction force F2 is a force that opposes the thermal contraction force F1 of the printed circuit board 3 applied to the solid-state imaging device 2 with protective glass.

保護ガラス4は、上述したプリント基板3の熱収縮力F1に対抗する反作用力F2によって、温度低下時のプリント基板3の熱収縮変形に伴う固体撮像素子2の熱収縮変形を抑制し、これによって、この固体撮像素子2の熱収縮に起因する応力を十分に吸収する。この結果、保護ガラス4は、このような応力によって招来される固体撮像素子2の反りを低減する。このようにして、保護ガラス4は、加熱処理後、具体的にはプリント基板3へのフリップチップ実装後の固体撮像素子2の受光部2aの反りを補正し、これによって、この受光部2aを平坦な状態に維持する。   The protective glass 4 suppresses the thermal contraction deformation of the solid-state imaging device 2 due to the thermal contraction deformation of the printed circuit board 3 when the temperature is lowered by the reaction force F2 that opposes the thermal contraction force F1 of the printed circuit board 3 described above. The stress resulting from the thermal contraction of the solid-state imaging device 2 is sufficiently absorbed. As a result, the protective glass 4 reduces the warpage of the solid-state imaging device 2 caused by such stress. In this way, the protective glass 4 corrects the warp of the light receiving portion 2a of the solid-state imaging device 2 after the heat treatment, specifically after the flip chip mounting on the printed circuit board 3, thereby making the light receiving portion 2a Keep it flat.

一方、保護ガラス4は、上述したように、所定の厚み(例えば固体撮像素子2に比して大きい厚み)に形成されたに酸化ケイ素等を主成分とするガラス部材であり、シリコンを主成分とする半導体チップである固体撮像素子2と略同じ熱膨張係数を有する。このため、上述したように固体撮像素子2に取り付けられた保護ガラス4は、その取付面すなわち受光部2a側の素子面から剥離する程の熱膨張係数差(熱膨張差および熱収縮差)を固体撮像素子2との間で生じることなく、この固体撮像素子2の剛性を補強することができる。   On the other hand, as described above, the protective glass 4 is a glass member that has a predetermined thickness (for example, a thickness larger than that of the solid-state imaging device 2) and that has silicon oxide or the like as a main component. It has substantially the same thermal expansion coefficient as the solid-state imaging device 2 which is a semiconductor chip. For this reason, the protective glass 4 attached to the solid-state imaging device 2 as described above has a difference in thermal expansion coefficient (difference in thermal expansion and thermal contraction) that is peeled off from the mounting surface, that is, the element surface on the light receiving portion 2a side. The rigidity of the solid-state imaging device 2 can be reinforced without being generated between the solid-state imaging device 2.

なお、保護ガラス4は、上述した保護ガラス付の固体撮像素子2のフリップチップ実装工程後における加熱処理(例えば、接着剤5の熱硬化処理等)の前後においても、同様に、プリント基板3の熱収縮力に抗して固体撮像素子2の反りを補正でき、この結果、このプリント基板3の熱収縮に起因する固体撮像素子2の受光部2aの反りを低減することができる。   The protective glass 4 is similarly applied to the printed circuit board 3 before and after the heat treatment (for example, thermosetting treatment of the adhesive 5) after the flip-chip mounting process of the solid-state imaging device 2 with the protective glass described above. The warpage of the solid-state imaging device 2 can be corrected against the thermal contraction force, and as a result, the warpage of the light receiving portion 2a of the solid-state imaging device 2 due to the thermal contraction of the printed circuit board 3 can be reduced.

以上、説明したように、本発明の実施の形態では、固体撮像素子と電気的に接続される複数の導電部を備えた保護ガラスを固体撮像素子の受光部側の素子面に取り付けて、この固体撮像素子の受光部側素子面を保護するとともに、この固体撮像素子の剛性を補強するように構成した。このため、この固体撮像素子の剛性を、加熱処理によってこの固体撮像素子を実装する回路基板の熱収縮力に比して強い剛性に補強することができ、この補強された剛性に基づく反作用力によって、回路基板の熱収縮変形に伴う固体撮像素子の熱収縮変形を抑制しつつ、この固体撮像素子の熱収縮に起因する応力を十分に吸収できる。この結果、加熱処理による実装後の回路基板と固体撮像素子との熱収縮差に起因する固体撮像素子の反りを低減することができる。   As described above, in the embodiment of the present invention, a protective glass including a plurality of conductive portions that are electrically connected to the solid-state imaging device is attached to the element surface on the light-receiving portion side of the solid-state imaging device. While protecting the light receiving part side element surface of a solid-state image sensor, it comprised so that the rigidity of this solid-state image sensor might be reinforced. For this reason, the rigidity of the solid-state imaging device can be reinforced by a heat treatment so that it is stronger than the thermal contraction force of the circuit board on which the solid-state imaging device is mounted, and the reaction force based on the reinforced rigidity is used. In addition, it is possible to sufficiently absorb the stress caused by the thermal contraction of the solid-state image sensor while suppressing the thermal contraction deformation of the solid-state image sensor due to the thermal contraction deformation of the circuit board. As a result, it is possible to reduce the warpage of the solid-state image sensor due to the thermal contraction difference between the circuit board after mounting by heat treatment and the solid-state image sensor.

また、上述した保護ガラスの熱膨張係数と固体撮像素子の熱膨張係数とを略同じに設定しているため、固体撮像素子の受光部側素子面に取り付けた保護ガラスが剥離する程に大きい熱膨張係数差を固体撮像素子と保護ガラスとの間で発生させずに、この固体撮像素子の剛性を保護ガラスによって補強することができる。   In addition, since the thermal expansion coefficient of the protective glass described above and the thermal expansion coefficient of the solid-state image sensor are set to be approximately the same, the heat that is large enough to peel off the protective glass attached to the light receiving unit side element surface of the solid-state image sensor. The rigidity of the solid-state imaging device can be reinforced by the protective glass without causing a difference in expansion coefficient between the solid-state imaging device and the protective glass.

なお、上述した実施の形態では、固体撮像素子2とプリント基板3とを電気的に接続する導電部4cを形成するために、保護ガラス4の各貫通孔4bに導電性充填材4dを充填していたが、本発明は、これに限定されるものではない。図7は、本発明の実施の形態にかかる撮像ユニットにおける導電部の変形例1の要部断面を示す模式図である。図8は、本発明の実施の形態にかかる撮像ユニットにおける導電部の変形例2の要部断面を示す模式図である。   In the above-described embodiment, in order to form the conductive portion 4c that electrically connects the solid-state imaging device 2 and the printed circuit board 3, the through holes 4b of the protective glass 4 are filled with the conductive filler 4d. However, the present invention is not limited to this. FIG. 7 is a schematic diagram illustrating a cross-section of the main part of Modification Example 1 of the conductive part in the imaging unit according to the embodiment of the present invention. FIG. 8 is a schematic diagram illustrating a cross-section of the main part of Modification Example 2 of the conductive part in the imaging unit according to the embodiment of the present invention.

具体的には、固体撮像素子2とプリント基板3とを電気的に接続する導電部は、保護ガラス4の各貫通孔4b内に内部配線をパターン形成して実現されてもよい。例えば図7に示すように、本発明の変形例1における保護ガラス4の貫通孔4bは、突起電極4eと固体撮像素子2の電極パッド2cとを電気的に接続するためのビアホールまたはスルーホールとして形成される。このような貫通孔4b内には、この電極パッド2cと電気的に接続され且つ一配線部分が貫通孔4bの外部に露出するように内部配線4fがパターン形成される。上述した突起電極4eは、このように貫通孔4bの外部に露出した内部配線4fの一部分に配置される。この変形例1にかかる撮像ユニットの導電部14cは、このような突起電極4eと内部配線4fとによって形成され、上述した実施の形態における導電部4cの場合と同様に、固体撮像素子2とプリント基板3とを電気的に接続する。   Specifically, the conductive portion that electrically connects the solid-state imaging device 2 and the printed board 3 may be realized by patterning internal wiring in each through-hole 4 b of the protective glass 4. For example, as shown in FIG. 7, the through hole 4 b of the protective glass 4 in Modification 1 of the present invention is a via hole or a through hole for electrically connecting the protruding electrode 4 e and the electrode pad 2 c of the solid-state imaging device 2. It is formed. In such a through hole 4b, the internal wiring 4f is patterned so as to be electrically connected to the electrode pad 2c and to expose one wiring portion outside the through hole 4b. The protruding electrode 4e described above is arranged in a part of the internal wiring 4f exposed to the outside of the through hole 4b in this way. The conductive portion 14c of the imaging unit according to the modification 1 is formed by such a protruding electrode 4e and the internal wiring 4f, and the solid-state imaging device 2 and the print are formed in the same manner as the conductive portion 4c in the above-described embodiment. The substrate 3 is electrically connected.

一方、固体撮像素子2とプリント基板3とを電気的に接続する導電部は、保護ガラス4の外壁に沿って外部配線をパターン形成して実現されてもよい。例えば図8に示すように、本発明の変形例2における保護ガラス4では、上述した貫通孔4bを形成せずに、突起電極4eと固体撮像素子2の電極パッド2cとを電気的に接続するための外部配線4gが保護ガラス4の外形に沿ってパターン形成される。上述した突起電極4eは、このようにパターン形成した外部配線4gの一配線部分に配置される。この変形例2にかかる撮像ユニットの導電部15cは、このような突起電極4eと外部配線4gとによって形成され、上述した実施の形態における導電部4cの場合と同様に、固体撮像素子2とプリント基板3とを電気的に接続する。   On the other hand, the conductive portion that electrically connects the solid-state imaging device 2 and the printed circuit board 3 may be realized by patterning external wiring along the outer wall of the protective glass 4. For example, as shown in FIG. 8, in the protective glass 4 in Modification 2 of the present invention, the protruding electrode 4e and the electrode pad 2c of the solid-state imaging device 2 are electrically connected without forming the above-described through hole 4b. The external wiring 4g for forming a pattern along the outer shape of the protective glass 4. The protruding electrode 4e described above is arranged in one wiring portion of the external wiring 4g thus patterned. The conductive portion 15c of the imaging unit according to the second modification is formed by such a protruding electrode 4e and the external wiring 4g. Similarly to the case of the conductive portion 4c in the above-described embodiment, the solid-state imaging device 2 and the print unit 15c are printed. The substrate 3 is electrically connected.

なお、上述した実施の形態では、先に固体撮像素子2に保護ガラス4を取り付け、その後、この保護ガラス付の固体撮像素子2をプリント基板3にフリップチップ実装していたが、これに限らず、予め導電部4cが形成された保護ガラス4をプリント基板3に実装し、その後、このプリント基板3上の保護ガラス4に固体撮像素子2を取り付けてもよい。   In the above-described embodiment, the protective glass 4 is first attached to the solid-state imaging device 2, and then the solid-state imaging device 2 with the protective glass is flip-chip mounted on the printed circuit board 3. However, the present invention is not limited to this. The protective glass 4 on which the conductive portion 4c is formed in advance may be mounted on the printed circuit board 3, and then the solid-state imaging device 2 may be attached to the protective glass 4 on the printed circuit board 3.

また、上述した実施の形態では、プリント基板3に保護ガラス付の固体撮像素子2をフリップチップ実装した場合を例示したが、これに限らず、プリント基板3に保護ガラス付の固体撮像素子2を銀ペ−スト材等の接着剤等によってダイボンディング実装し、このプリント基板3と保護ガラス付の固体撮像素子2とを金属ワイヤボンディング技術によって電気的に接続してもよい。   In the above-described embodiment, the case where the solid-state imaging device 2 with protective glass is flip-chip mounted on the printed circuit board 3 is exemplified. However, the present invention is not limited thereto, and the solid-state imaging device 2 with protective glass is mounted on the printed circuit board 3. Die bonding mounting may be performed using an adhesive such as a silver paste material, and the printed circuit board 3 and the solid-state imaging device 2 with a protective glass may be electrically connected by a metal wire bonding technique.

また、上述した実施の形態では、多層構造の回路基板であるプリント基板3を例示したが、これに限らず、本発明の実施の形態にかかる撮像ユニット内の回路基板は単層構造の回路基板であってもよい。   In the above-described embodiment, the printed circuit board 3 which is a multilayer circuit board is illustrated. However, the circuit board in the imaging unit according to the embodiment of the present invention is not limited to this, and the circuit board has a single-layer structure. It may be.

以上のように、本発明にかかる撮像ユニットは、CCDまたはCMOS等の固体撮像素子を備えた撮像ユニットに有用であり、特に、回路基板の熱収縮に起因する固体撮像素子の反りを低減することができる撮像ユニットに適している。   As described above, the imaging unit according to the present invention is useful for an imaging unit including a solid-state imaging device such as a CCD or a CMOS, and particularly reduces the warpage of the solid-state imaging device due to thermal contraction of the circuit board. Suitable for imaging units that can

1 撮像ユニット
2 固体撮像素子
2a 受光部
2b 駆動回路部
2c 電極パッド
3 プリント基板
3a 開口部
3b 配線層
4 保護ガラス
4a 凹部
4b 貫通孔
4c,14c,15c 導電部
4d 導電性充填材
4e 突起電極
4f 内部配線
4g 外部配線
5 接着剤
DESCRIPTION OF SYMBOLS 1 Imaging unit 2 Solid-state image sensor 2a Light-receiving part 2b Drive circuit part 2c Electrode pad 3 Printed circuit board 3a Opening part 3b Wiring layer 4 Protective glass 4a Recessed part 4b Through-hole 4c, 14c, 15c Conductive part 4d Conductive filler 4e Projection electrode 4f Internal wiring 4g External wiring 5 Adhesive

Claims (5)

固体撮像素子と、
前記固体撮像素子と電気的に接続される複数の導電部を有し、前記固体撮像素子の受光部側の素子面を保護するとともに前記固体撮像素子の剛性を補強する保護ガラスと、
前記固体撮像素子の受光部に対応する開口部が形成され、前記受光部と前記開口部とを対向させた態様で前記複数の導電部を介して前記固体撮像素子と電気的に接続される回路基板と、
を備え、前記回路基板の熱収縮力は、前記保護ガラスによって補強された前記固体撮像素子の剛性に比して弱いことを特徴とする撮像ユニット。
A solid-state image sensor;
A protective glass having a plurality of conductive portions electrically connected to the solid-state imaging device, protecting the element surface on the light-receiving portion side of the solid-state imaging device and reinforcing the rigidity of the solid-state imaging device;
A circuit in which an opening corresponding to the light receiving portion of the solid-state imaging device is formed and electrically connected to the solid-state imaging device through the plurality of conductive portions in a mode in which the light receiving portion and the opening are opposed to each other A substrate,
And the thermal contraction force of the circuit board is weaker than the rigidity of the solid-state imaging device reinforced by the protective glass.
前記固体撮像素子の熱膨張係数は、前記保護ガラスの熱膨張係数と同じであることを特徴とする請求項1に記載の撮像ユニット。   The imaging unit according to claim 1, wherein a thermal expansion coefficient of the solid-state imaging device is the same as a thermal expansion coefficient of the protective glass. 前記保護ガラスは、前記受光部との接触を回避する凹部が形成されたガラス部材であることを特徴とする請求項1または2に記載の撮像ユニット。   The imaging unit according to claim 1, wherein the protective glass is a glass member in which a concave portion that avoids contact with the light receiving unit is formed. 前記保護ガラスには、前記複数の導電部を配置する複数の貫通孔が形成され、
前記導電部は、
前記複数の貫通孔に充填される複数の導電性充填部材と、
前記導電性充填部材と前記回路基板とを電気的に接続する複数の突起電極と、
を備えたことを特徴とする請求項1〜3のいずれか一つに記載の撮像ユニット。
In the protective glass, a plurality of through holes for arranging the plurality of conductive portions are formed,
The conductive part is
A plurality of conductive filling members filled in the plurality of through holes;
A plurality of protruding electrodes that electrically connect the conductive filling member and the circuit board;
The imaging unit according to claim 1, further comprising:
前記保護ガラスは、前記固体撮像素子と前記回路基板との間に介在することを特徴とする請求項1〜4のいずれか一つに記載の撮像ユニット。   The imaging unit according to claim 1, wherein the protective glass is interposed between the solid-state imaging device and the circuit board.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015179739A (en) * 2014-03-19 2015-10-08 セイコーインスツル株式会社 Optical sensor
JP2017113077A (en) * 2015-12-21 2017-06-29 ソニー・オリンパスメディカルソリューションズ株式会社 Endoscopic device
JP2020537332A (en) * 2017-10-09 2020-12-17 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH Optoelectronic semiconductor components, and methods for manufacturing optoelectronic semiconductor components

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228178A (en) * 1988-03-09 1989-09-12 Hitachi Ltd solid-state imaging device
JPH10335624A (en) * 1997-06-05 1998-12-18 Hamamatsu Photonics Kk Back-illuminated light-receiving device and method of manufacturing the same
JP2005268963A (en) * 2004-03-16 2005-09-29 Citizen Electronics Co Ltd Imaging module, method for mounting the same to mother board, and method for manufacturing the same
JP2007142058A (en) * 2005-11-17 2007-06-07 Matsushita Electric Ind Co Ltd Semiconductor imaging device and manufacturing method thereof, and semiconductor imaging device and manufacturing method thereof
JP2007299929A (en) * 2006-04-28 2007-11-15 Matsushita Electric Ind Co Ltd Optical device apparatus and optical device module using the same
JP2009129954A (en) * 2007-11-20 2009-06-11 Panasonic Corp Semiconductor imaging device and manufacturing method thereof
JP2009283902A (en) * 2008-04-25 2009-12-03 Panasonic Corp Optical device and electronic apparatus including the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228178A (en) * 1988-03-09 1989-09-12 Hitachi Ltd solid-state imaging device
JPH10335624A (en) * 1997-06-05 1998-12-18 Hamamatsu Photonics Kk Back-illuminated light-receiving device and method of manufacturing the same
JP2005268963A (en) * 2004-03-16 2005-09-29 Citizen Electronics Co Ltd Imaging module, method for mounting the same to mother board, and method for manufacturing the same
JP2007142058A (en) * 2005-11-17 2007-06-07 Matsushita Electric Ind Co Ltd Semiconductor imaging device and manufacturing method thereof, and semiconductor imaging device and manufacturing method thereof
JP2007299929A (en) * 2006-04-28 2007-11-15 Matsushita Electric Ind Co Ltd Optical device apparatus and optical device module using the same
JP2009129954A (en) * 2007-11-20 2009-06-11 Panasonic Corp Semiconductor imaging device and manufacturing method thereof
JP2009283902A (en) * 2008-04-25 2009-12-03 Panasonic Corp Optical device and electronic apparatus including the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015179739A (en) * 2014-03-19 2015-10-08 セイコーインスツル株式会社 Optical sensor
JP2017113077A (en) * 2015-12-21 2017-06-29 ソニー・オリンパスメディカルソリューションズ株式会社 Endoscopic device
US10561306B2 (en) 2015-12-21 2020-02-18 Sony Olympus Medical Solutions Inc. Endoscopic device
US11122969B2 (en) 2015-12-21 2021-09-21 Sony Olympus Medical Solutions Inc. Endoscopic device
JP2020537332A (en) * 2017-10-09 2020-12-17 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH Optoelectronic semiconductor components, and methods for manufacturing optoelectronic semiconductor components
US11316075B2 (en) 2017-10-09 2022-04-26 Osram Oled Gmbh Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component
JP7108687B2 (en) 2017-10-09 2022-07-28 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic semiconductor component and method for manufacturing optoelectronic semiconductor component

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