[go: up one dir, main page]

JP2009171084A - Level shifter circuit - Google Patents

Level shifter circuit Download PDF

Info

Publication number
JP2009171084A
JP2009171084A JP2008005288A JP2008005288A JP2009171084A JP 2009171084 A JP2009171084 A JP 2009171084A JP 2008005288 A JP2008005288 A JP 2008005288A JP 2008005288 A JP2008005288 A JP 2008005288A JP 2009171084 A JP2009171084 A JP 2009171084A
Authority
JP
Japan
Prior art keywords
level shifter
nmos
voltage
shifter circuit
pmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008005288A
Other languages
Japanese (ja)
Inventor
Naohisa Takeda
尚久 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2008005288A priority Critical patent/JP2009171084A/en
Publication of JP2009171084A publication Critical patent/JP2009171084A/en
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Logic Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a level shifter circuit where an operation is fast even when the number of elements is small. <P>SOLUTION: When an input voltage Vin becomes a grounding voltage Vss and the gate voltage (voltage of the input terminal of a level shifter part) of a PMOS 31 and an NMOS 21 becomes a power supply voltage Vdd, an NMOS 23 is turned on. Thus, the drain voltage (voltage of the output terminal of the level shifter part) of a PMOS 33 and an NMOS 22 tends to become a power supply voltage Vpp, and an output voltage Vout tends to become the grounding voltage Vss. That is, the operation of the level shifter circuit becomes fast. Also, since the number of inverters becomes smaller compared to a conventional level shifter circuit, the number of elements is reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、レベルシフタ回路に関する。   The present invention relates to a level shifter circuit.

従来のレベルシフタ回路について説明する。図2は、従来のレベルシフタ回路を示す図である。   A conventional level shifter circuit will be described. FIG. 2 is a diagram showing a conventional level shifter circuit.

レベルシフタ回路の入力端子がローになると、PMOSM5及びNMOSM2のゲートがハイになり、PMOSM5がオフし、NMOSM2がオンし、ノードP1がローになる。すると、PMOSM3がオンする。また、PMOSM6のゲートがローになり、PMOSM6がオンする。よって、ノードP2がハイになり、レベルシフタ回路の出力端子がローになる。この信号経路を、経路Bする。   When the input terminal of the level shifter circuit goes low, the gates of PMOS M5 and NMOS M2 go high, PMOS M5 turns off, NMOS M2 turns on, and node P1 goes low. Then, the PMOS M3 is turned on. Further, the gate of the PMOS M6 becomes low, and the PMOS M6 is turned on. Therefore, the node P2 becomes high and the output terminal of the level shifter circuit becomes low. This signal path is defined as path B.

また、レベルシフタ回路の入力端子がローになると、PMOSM5及びNMOSM2のゲートがハイになり、PMOSM5がオフし、NMOSM2がオンし、ノードP1がローになる。すると、ノードP3がハイになり、レベルシフタ回路の出力端子がローになる。この信号経路を、経路Aとする。   When the input terminal of the level shifter circuit goes low, the gates of PMOS M5 and NMOS M2 go high, PMOS M5 turns off, NMOS M2 turns on, and node P1 goes low. Then, the node P3 becomes high, and the output terminal of the level shifter circuit becomes low. This signal path is referred to as path A.

上記のように経路A〜Bが存在し、経路Aは経路Bよりも速い。この経路Aにより、レベルシフタ回路の動作が速くなる(例えば、特許文献1参照)。
特開2007−329818号公報(図5)
As described above, routes A to B exist, and route A is faster than route B. This path A speeds up the operation of the level shifter circuit (see, for example, Patent Document 1).
Japanese Patent Laying-Open No. 2007-329818 (FIG. 5)

しかし、特許文献1によって開示された技術では、インバータI1〜I5が必要になり、素子数が多くなってしまう。   However, in the technique disclosed in Patent Document 1, inverters I1 to I5 are necessary, and the number of elements increases.

本発明は、上記課題に鑑みてなされ、素子数が少なくても動作が速いレベルシフタ回路を提供する。   The present invention has been made in view of the above problems, and provides a level shifter circuit that operates quickly even when the number of elements is small.

本発明は、上記課題を解決するため、レベルシフタ回路において、入力された電圧を所定電圧にレベルシフトするレベルシフタ部と、ソースが前記レベルシフタ部の出力端子に設けられ、ドレインに電源電圧を供給され、前記レベルシフタ部の入力端子がハイになるとオンするNMOSと、を備えることを特徴とするレベルシフタ回路を提供する。   In order to solve the above problems, the present invention provides a level shifter unit that level-shifts an input voltage to a predetermined voltage in a level shifter circuit, a source is provided at an output terminal of the level shifter unit, and a power supply voltage is supplied to a drain. There is provided a level shifter circuit comprising an NMOS that is turned on when an input terminal of the level shifter portion becomes high.

本発明では、レベルシフタ部の入力端子がハイになると、NMOSがオンすることにより、レベルシフタ部の出力端子がハイになりやすくなる。つまり、レベルシフタ回路の動作が速くなる。   In the present invention, when the input terminal of the level shifter unit becomes high, the NMOS is turned on, so that the output terminal of the level shifter unit easily becomes high. That is, the operation of the level shifter circuit becomes faster.

また、従来のレベルシフタ回路と比較し、インバータの数が少なくなるので、素子数が少なくなる。   Further, since the number of inverters is reduced as compared with the conventional level shifter circuit, the number of elements is reduced.

以下、本発明の実施形態を、図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the drawings.

まず、レベルシフタ回路の構成について説明する。図1は、レベルシフタ回路を示す図である。   First, the configuration of the level shifter circuit will be described. FIG. 1 is a diagram illustrating a level shifter circuit.

レベルシフタ回路は、インバータ11〜13、NMOS21〜23及びPMOS31〜34を備えている。   The level shifter circuit includes inverters 11 to 13, NMOSs 21 to 23, and PMOSs 31 to 34.

インバータ11は、電源電圧Vdd及び接地電圧Vssを供給され、入力端子がレベルシフタ回路の入力端子に接続され、出力端子がNMOS21とPMOS31とNMOS23のゲートに接続されている。インバータ12は、電源電圧Vdd及び接地電圧Vssを供給され、入力端子がインバータ11の出力端子に接続され、出力端子がNMOS22及びPMOS33のゲートに接続されている。インバータ13は、電源電圧Vpp及び接地電圧Vssを供給され、入力端子がPMOS32のゲートとPMOS33のドレインとNMOS22のドレインとNMOS23のソースとに接続され、出力端子がレベルシフタ回路の出力端子に接続されている。PMOS32は、ソースに電源電圧Vppを供給され、ドレインがPMOS31のソースに接続されている。PMOS31は、ドレインがNMOS21のドレイン及びPMOS34のゲートに接続されている。NMOS21は、ソースに接地電圧Vssを供給されている。PMOS34は、ソースに電源電圧Vppを供給され、ドレインがPMOS33のソースに接続されている。NMOS22は、ソースに接地電圧Vssを供給されている。NMOS23は、ドレインに電源電圧Vppを供給されている。PMOS31〜34は、バックゲートに電源端子Vppを供給されている。NMOS21〜23は、バックゲートに接地端子Vssを供給されている。   The inverter 11 is supplied with the power supply voltage Vdd and the ground voltage Vss, the input terminal is connected to the input terminal of the level shifter circuit, and the output terminal is connected to the gates of the NMOS 21, PMOS 31, and NMOS 23. The inverter 12 is supplied with the power supply voltage Vdd and the ground voltage Vss, the input terminal is connected to the output terminal of the inverter 11, and the output terminal is connected to the gates of the NMOS 22 and the PMOS 33. The inverter 13 is supplied with the power supply voltage Vpp and the ground voltage Vss, the input terminal is connected to the gate of the PMOS 32, the drain of the PMOS 33, the drain of the NMOS 22 and the source of the NMOS 23, and the output terminal is connected to the output terminal of the level shifter circuit. Yes. In the PMOS 32, the power supply voltage Vpp is supplied to the source, and the drain is connected to the source of the PMOS 31. The drain of the PMOS 31 is connected to the drain of the NMOS 21 and the gate of the PMOS 34. The NMOS 21 is supplied with the ground voltage Vss at its source. In the PMOS 34, the power supply voltage Vpp is supplied to the source, and the drain is connected to the source of the PMOS 33. The NMOS 22 is supplied with the ground voltage Vss at the source. The NMOS 23 is supplied with the power supply voltage Vpp at its drain. The PMOSs 31 to 34 are supplied with a power supply terminal Vpp at their back gates. The NMOSs 21 to 23 are supplied with the ground terminal Vss at their back gates.

ここで、NMOS23の閾値電圧はNMOS21〜22の閾値電圧よりも低いので、NMOS23はNMOS21〜22よりもオンしやすい。また、電源電圧Vppは電源電圧Vddよりも高い。   Here, since the threshold voltage of the NMOS 23 is lower than the threshold voltages of the NMOSs 21 to 22, the NMOS 23 is more likely to be turned on than the NMOSs 21 to 22. The power supply voltage Vpp is higher than the power supply voltage Vdd.

また、インバータ12とNMOS21〜22とPMOS31〜34とは、レベルシフト部を構成する。レベルシフト部は、電圧をPMOS31及びNMOS21のゲート(レベルシフタ部の入力端子)に入力され、その入力された電圧を所定電圧にレベルシフトし、その所定電圧をPMOS33及びNMOS22のドレイン(レベルシフタ部の出力端子)から出力する。   The inverter 12, the NMOSs 21 to 22, and the PMOSs 31 to 34 constitute a level shift unit. The level shift unit inputs a voltage to the gates of the PMOS 31 and the NMOS 21 (input terminals of the level shifter unit), shifts the input voltage to a predetermined voltage, and transfers the predetermined voltage to the drains of the PMOS 33 and the NMOS 22 (output of the level shifter unit). Terminal).

次に、レベルシフタ回路の動作について説明する。   Next, the operation of the level shifter circuit will be described.

入力電圧Vinが接地電圧Vssになると、インバータ11により、PMOS31及びNMOS21のゲート電圧(レベルシフタ部の入力端子の電圧)が電源電圧Vddになり、PMOS31がオフし、NMOS21がオンする。すると、NMOS21のドレイン電圧は接地電圧Vssになり、PMOS34がオンする。また、インバータ12により、PMOS33及びNMOS22のゲート電圧は接地電圧Vssになり、PMOS33はオンし、NMOS22はオフする。よって、PMOS33及びNMOS22のドレイン電圧(レベルシフタ部の出力端子の電圧)が電源電圧Vppになり、インバータ13により、出力電圧Voutが接地電圧Vssになる。   When the input voltage Vin becomes the ground voltage Vss, the inverter 11 causes the gate voltages of the PMOS 31 and the NMOS 21 (the voltage at the input terminal of the level shifter) to become the power supply voltage Vdd, the PMOS 31 is turned off, and the NMOS 21 is turned on. Then, the drain voltage of the NMOS 21 becomes the ground voltage Vss, and the PMOS 34 is turned on. Further, the inverter 12 causes the gate voltages of the PMOS 33 and the NMOS 22 to become the ground voltage Vss, the PMOS 33 is turned on, and the NMOS 22 is turned off. Therefore, the drain voltage of the PMOS 33 and NMOS 22 (the voltage at the output terminal of the level shifter) becomes the power supply voltage Vpp, and the output voltage Vout becomes the ground voltage Vss by the inverter 13.

また、入力電圧Vinが接地電圧Vssになると、インバータ11により、PMOS31及びNMOS21のゲート電圧(レベルシフタ部の入力端子の電圧)が電源電圧Vddになり、また、NMOS23のゲート電圧が電源電圧Vddになり、NMOS23がオンする。すると、PMOS33及びNMOS22のドレインと電源電圧Vppが印加される電源端子との間に、PMOS33〜34を介する経路及びNMOS23を介する経路の2つの経路が存在するようになる。   When the input voltage Vin becomes the ground voltage Vss, the inverter 11 causes the gate voltage of the PMOS 31 and the NMOS 21 (the voltage at the input terminal of the level shifter) to become the power supply voltage Vdd, and the gate voltage of the NMOS 23 becomes the power supply voltage Vdd. , NMOS 23 is turned on. Then, there are two paths between the drains of the PMOS 33 and the NMOS 22 and the power supply terminal to which the power supply voltage Vpp is applied, a path through the PMOSs 33 to 34 and a path through the NMOS 23.

スタンバイ時において、レベルシフタ回路は、PMOS33〜34及びNMOS23がオンし、NMOS23のソース電圧及びドレイン電圧が電源電圧Vppになるよう制御されている。すると、NMOS23は、リーク電流を流しにくくなる。   During standby, the level shifter circuit is controlled so that the PMOSs 33 to 34 and the NMOS 23 are turned on, and the source voltage and drain voltage of the NMOS 23 become the power supply voltage Vpp. Then, it becomes difficult for the NMOS 23 to flow a leak current.

このようにすると、入力電圧Vinが接地電圧VssになってPMOS31及びNMOS21のゲート電圧(レベルシフタ部の入力端子の電圧)が電源電圧Vddになると、NMOS23がオンすることにより、PMOS33及びNMOS22のドレインと電源電圧Vppが印加される電源端子との間に、PMOS33〜34を介する経路及びNMOS23を介する経路の2つの経路が存在し、PMOS33及びNMOS22のドレインと接地電圧Vssが印加される接地端子との間に、NMOS22を介する経路の1つの経路が存在する。よって、PMOS33及びNMOS22のドレイン電圧(レベルシフタ部の出力端子の電圧)が電源電圧Vppになりやすくなり、出力電圧Voutが接地電圧Vssになりやすくなる。つまり、レベルシフタ回路の動作が速くなる。   In this way, when the input voltage Vin becomes the ground voltage Vss and the gate voltage of the PMOS 31 and NMOS 21 (the voltage at the input terminal of the level shifter section) becomes the power supply voltage Vdd, the NMOS 23 is turned on, and the drains of the PMOS 33 and NMOS 22 Between the power supply terminal to which the power supply voltage Vpp is applied, there are two paths, a path through the PMOSs 33 to 34 and a path through the NMOS 23, and the drains of the PMOS 33 and the NMOS 22 and the ground terminal to which the ground voltage Vss is applied. In between, there is one path through the NMOS 22. Therefore, the drain voltage of the PMOS 33 and NMOS 22 (the voltage at the output terminal of the level shifter unit) is likely to be the power supply voltage Vpp, and the output voltage Vout is likely to be the ground voltage Vss. That is, the operation of the level shifter circuit becomes faster.

また、従来のレベルシフタ回路と比較し、インバータの数が少なくなるので、素子数が少なくなる。よって、レベルシフタ回路の消費電力が少なくなる。また、レベルシフタ回路の面積が小さくなり、コストが安くなる。   Further, since the number of inverters is reduced as compared with the conventional level shifter circuit, the number of elements is reduced. Therefore, the power consumption of the level shifter circuit is reduced. Further, the area of the level shifter circuit is reduced, and the cost is reduced.

レベルシフタ回路を示す図である。It is a figure which shows a level shifter circuit. 従来のレベルシフタ回路を示す図である。It is a figure which shows the conventional level shifter circuit.

符号の説明Explanation of symbols

11〜13……インバータ 21〜23……NMOS 31〜34……PMOS 11-13 …… Inverters 21-23 …… NMOS 31-34 …… PMOS

Claims (3)

レベルシフタ回路において、
入力された電圧を所定電圧にレベルシフトするレベルシフタ部と、
ソースが前記レベルシフタ部の出力端子に設けられ、ドレインに電源電圧を供給され、前記レベルシフタ部の入力端子がハイになるとオンするNMOSと、
を備えることを特徴とするレベルシフタ回路。
In the level shifter circuit,
A level shifter for level shifting the input voltage to a predetermined voltage;
A source provided at the output terminal of the level shifter unit, a power supply voltage is supplied to the drain, and an NMOS that is turned on when the input terminal of the level shifter unit is high;
A level shifter circuit comprising:
前記NMOSの閾値電圧は、前記レベルシフタ部のNMOSの閾値電圧よりも低いことを特徴とする請求項1記載のレベルシフタ回路。   2. The level shifter circuit according to claim 1, wherein the threshold voltage of the NMOS is lower than the threshold voltage of the NMOS of the level shifter unit. 前記NMOSは、ゲートが前記レベルシフタ部の入力端子に設けられ、バックゲートに接地電圧を供給されることを特徴とする請求項1記載のレベルシフタ回路。   2. The level shifter circuit according to claim 1, wherein a gate of the NMOS is provided at an input terminal of the level shifter unit, and a ground voltage is supplied to a back gate.
JP2008005288A 2008-01-15 2008-01-15 Level shifter circuit Withdrawn JP2009171084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008005288A JP2009171084A (en) 2008-01-15 2008-01-15 Level shifter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008005288A JP2009171084A (en) 2008-01-15 2008-01-15 Level shifter circuit

Publications (1)

Publication Number Publication Date
JP2009171084A true JP2009171084A (en) 2009-07-30

Family

ID=40971810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008005288A Withdrawn JP2009171084A (en) 2008-01-15 2008-01-15 Level shifter circuit

Country Status (1)

Country Link
JP (1) JP2009171084A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829971B2 (en) 2011-11-29 2014-09-09 Seiko Epson Corporation Level shifter circuit, integrated circuit device, electronic watch
CN107231143A (en) * 2016-03-23 2017-10-03 精工半导体有限公司 Level shift circuit
CN112112127A (en) * 2020-09-23 2020-12-22 重庆交通大学 An anti-collision structure for bridge piers based on waste tires

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59216327A (en) * 1983-05-24 1984-12-06 Seiko Epson Corp level shift circuit
JPH0795044A (en) * 1993-09-24 1995-04-07 Sanyo Electric Co Ltd Level converting circuit
JPH07193488A (en) * 1993-12-27 1995-07-28 Matsushita Electric Ind Co Ltd Level shifter circuit
JPH1084274A (en) * 1996-09-09 1998-03-31 Matsushita Electric Ind Co Ltd Semiconductor logic circuit and circuit layout structure
JP2004363843A (en) * 2003-06-04 2004-12-24 Seiko Epson Corp Semiconductor integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59216327A (en) * 1983-05-24 1984-12-06 Seiko Epson Corp level shift circuit
JPH0795044A (en) * 1993-09-24 1995-04-07 Sanyo Electric Co Ltd Level converting circuit
JPH07193488A (en) * 1993-12-27 1995-07-28 Matsushita Electric Ind Co Ltd Level shifter circuit
JPH1084274A (en) * 1996-09-09 1998-03-31 Matsushita Electric Ind Co Ltd Semiconductor logic circuit and circuit layout structure
JP2004363843A (en) * 2003-06-04 2004-12-24 Seiko Epson Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829971B2 (en) 2011-11-29 2014-09-09 Seiko Epson Corporation Level shifter circuit, integrated circuit device, electronic watch
CN107231143A (en) * 2016-03-23 2017-10-03 精工半导体有限公司 Level shift circuit
CN112112127A (en) * 2020-09-23 2020-12-22 重庆交通大学 An anti-collision structure for bridge piers based on waste tires

Similar Documents

Publication Publication Date Title
CN103187963B (en) Level shifting circuit and semiconductor device using the same
KR101623117B1 (en) Logic circuit capable of level shifting
JP2009141640A (en) Power source switching circuit
JP2012502558A (en) CMOS level shifter circuit design
JP2008061242A (en) Low power level shifter and low power level shifting method
US20090189670A1 (en) Level shifter with reduced power consumption and low propagation delay
JP2014160981A (en) Level shift circuit
US7777548B2 (en) Level shifter
JP2006295926A (en) Interface circuit with voltage level shifter
JP5421075B2 (en) Input circuit
JP2009171084A (en) Level shifter circuit
JP2017063300A (en) Input circuit
JP2009260804A (en) Power-on detecting circuit and level converting circuit
US20090066397A1 (en) Level shift circuit
TWI543536B (en) Low power, single-rail level shifters employing power down signal from output power domain and a method of converting a data signal between power domains
JP4386918B2 (en) Level shift circuit and semiconductor integrated circuit having the same
JP2007281756A (en) Semiconductor integrated circuit
JP2011061289A (en) Input buffer circuit
JP2006295322A (en) Level shifter circuit
JP2005184573A (en) Inverter circuit
JP2008042763A (en) Semiconductor integrated circuit
CN111478693A (en) Near-threshold level converter
JP2007150987A (en) Semiconductor integrated device
JP4939285B2 (en) Level shifter
US8502560B2 (en) Output circuit and output control system

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091108

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091113

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091117

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101110

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120918

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20121114