JP2009120833A - Photo-resist peeling composition, photo-resist peeling method and manufacturing method for display unit using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a composition for peeling a photo-resist capable of reusing without the reduction of an essential peeling capability or a damage of a metallic pattern and capable of reducing an expense in a photoetching process. <P>SOLUTION: The composition for peeling a photo-resist contains a sulfone type compound of 80-98.5 mass%, a lactone type compound of 1-10 mass% and an alkyl sulfonic acid of 0.1 to 5 mass%. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a photoresist stripping composition, a photoresist stripping method using the same, and a method for manufacturing a display device.

  The liquid crystal display device displays an image using the optical and electrical properties of the liquid crystal material. A liquid crystal display device has advantages such as light weight, low power, and a low driving voltage as compared with a cathode ray tube (CRT), a plasma display device, and the like.

  In general, a liquid crystal display device includes a liquid crystal display panel and a light source that supplies light to the liquid crystal display panel. The liquid crystal display panel includes a thin film transistor display panel, a color filter display panel, and a liquid crystal layer positioned between the display panels. The light generated from the light source passes through the liquid crystal layer, and the liquid crystal layer displays an image by adjusting the light transmittance.

  The thin film transistor array panel includes a plurality of thin film transistors having a stacked structure. The thin film transistor can be formed by repeating a process of forming a conductive or non-conductive thin film and a process of patterning the thin film through a photo etching process using a photoresist. A step of adding a photoresist stripping composition on the top and stripping the residual photoresist is included. The photoresist stripping composition used at this time can be collected and partially reused after being filtered through a filter.

  However, at this time, since the filter only performs a function of physically separating impurities mixed with the photoresist stripping composition, it cannot separate the photoresist residue dissolved in the photoresist stripping composition. Therefore, the performance of the reused photoresist stripping composition is degraded compared to the original photoresist stripping composition that is never used.

  The problem to be solved by the present invention is to provide a photoresist stripping composition that can be reused and does not deteriorate in performance. Moreover, it is providing the photoresist peeling method using such a photoresist peeling composition, and providing the manufacturing method of the display apparatus using such a photoresist peeling composition.

  The technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by those skilled in the art from the following description.

The photoresist stripping composition according to the embodiment of the present invention includes 80 to 98.5% by mass of a sulfone compound, 1 to 10% by mass of a lactone compound, and 0.1 to 5% by mass of an alkyl sulfonic acid.
The sulfone compound is at least one selected from tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1-dioxide, and tetrahydrothiophene-1 oxide. Can be included.

  The lactone compound may include at least one selected from γ-butyrolactone, α-methylene-γ-butyrolactone, and γ-hexanolactone.

  The alkyl sulfonic acid can include at least one selected from methyl sulfonic acid, ethyl sulfonic acid, propyl sulfonic acid, and butyl sulfonic acid.

  The sulfone compound may be tetrahydrothiophene 1,1-dioxide, and the lactone compound may be γ-butyrolactone.

  The photoresist stripping method according to the embodiment of the present invention includes a step of forming a plurality of photoresist patterns on a substrate, a sulfone compound 80 to 98.5% by mass, and a lactone compound 1 to 10% by mass on the photoresist pattern. And a step of stripping the photoresist pattern by adding a photoresist stripping composition containing 0.1 to 5% by mass of alkyl sulfonic acid, a step of recovering the photoresist stripping composition added to the photoresist pattern, and an ozone reaction A step of decomposing photoresist impurities contained in the photoresist stripping composition by adding ozone gas to the photoresist stripping composition collected in the vessel;

  After the step of decomposing the photoresist impurities, the method may further include a step of degassing the photoresist stripping composition to remove ozone contained in the photoresist stripping composition.

  The sulfone compound is at least one selected from tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1-dioxide, and tetrahydrothiophene-1 oxide. Wherein the lactone compound includes at least one selected from γ-butyrolactone, α-methylene-γ-butyrolactone, and γ-hexanolactone, and the alkylsulfonic acid includes methylsulfonic acid, ethylsulfonic acid, At least one selected from propylsulfonic acid and butylsulfonic acid may be included.

  A method of manufacturing a display device according to an embodiment of the present invention includes a step of forming a gate line including a gate electrode, a step of forming a gate insulating film on the gate line, a step of forming a semiconductor layer on the gate insulating film, Forming a data line including a source electrode and a drain electrode facing the source electrode on the semiconductor layer, and forming a pixel electrode connected to the drain electrode; At least one of the step of forming a semiconductor layer, the step of forming a data line and a drain electrode, and the step of forming a pixel electrode is a step of forming a photoresist pattern. In addition to 80 to 98.5% by mass of a sulfone compound, 1 to 10% by mass of a lactone compound, and 0.1 to 5% by mass of an alkyl sulfonic acid. The step of stripping the photoresist pattern by adding the strike stripping composition, the step of recovering the photoresist stripping composition added to the photoresist pattern, and adding the ozone gas to the recovered photoresist stripping composition A step of decomposing a photoresist impurity contained in the object.

  The sulfone compound is at least one selected from tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1-dioxide, and tetrahydrothiophene-1 oxide. Wherein the lactone compound includes at least one selected from γ-butyrolactone, α-methylene-γ-butyrolactone, and γ-hexanolactone, and the alkylsulfonic acid includes methylsulfonic acid, ethylsulfonic acid, At least one selected from propylsulfonic acid and butylsulfonic acid may be included.

  After the step of decomposing the photoresist impurities, the method may further include a step of degassing the photoresist stripping composition to remove ozone contained in the photoresist stripping composition.

  The photoresist stripping composition of the present invention does not substantially reduce stripping performance even when it is used repeatedly, thereby reducing the cost of the photoetching process.

Specific details of the embodiments are included in the detailed description and drawings.
Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described in detail later in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various different forms. The embodiments are provided to complete the disclosure of the present invention, and are provided for those who have ordinary knowledge in the technical field to which the present invention belongs to fully understand the scope of the invention. Stipulated by the statement in the section.

First, a photoresist stripping composition according to an embodiment of the present invention will be described.
A photoresist stripping composition according to an embodiment of the present invention includes a sulfone compound, a lactone compound, and an alkyl sulfonic acid.

  The sulfone compound is a main release agent and plays a role of removing the photoresist. The sulfone compounds include tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1. -It may be one or more selected from tetrahydrothiophene-3-ol-1, 1-dioxide and tetrahydrothiophene-1-oxide, and among these, tetrahydrothiophene 1,1 Dioxide is particularly preferred.

  The sulfone-based compound is included at about 80 to about 98.5% by mass based on the total content of the photoresist stripping composition. When the content of the sulfone compound is less than about 80% by mass, the photoresist is not sufficiently stripped, and when it exceeds about 98.5% by mass, the performance of the photoresist stripping composition is unstable.

  The lactone compound plays a role of assisting the function of the main release agent and makes the main release agent maintain a certain performance. The lactone compound is 1 selected from γ-butyrolactone, γ-methylene-γ-butyrolactone, and γ-hexanolactone. There can be more than one species, among which γ-butyrolactone is particularly preferred.

  The lactone compound is contained in an amount of about 1 to about 10% by weight based on the total content of the photoresist stripping composition. When the content of the lactone compound is less than about 1% by mass, the stability of the photoresist stripping composition is lowered, and when it exceeds about 10% by mass, a defect occurs when the photoresist is stripped.

  Alkyl sulfonic acid not only serves to assist the function of the main release agent, but also serves to prevent metal corrosion. The alkyl sulfonic acid may be one or more selected from methyl sulfonic acid, ethyl sulfonic acid, propyl sulfonic acid, and butyl sulfonic acid, and among these, methyl sulfonic acid is preferable.

  The alkyl sulfonic acid is contained in an amount of about 0.1 to about 5% by weight based on the total content of the photoresist stripping composition. When the alkyl sulfonic acid content is less than about 0.1% by weight, the performance of the photoresist stripping composition is unstable, and when it exceeds about 5% by weight, the metal is rather damaged.

  The photoresist stripping composition according to the embodiment of the present invention has high photoresist decomposing performance and can be reused.

  Hereinafter, a photoresist stripping method according to an embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a flowchart illustrating a photoresist stripping method according to an embodiment of the present invention.
In the photoresist stripping method according to an embodiment of the present invention, first, a substrate on which a photoresist pattern is formed is prepared, and a photoresist stripping composition is added to the photoresist pattern (S10). Next, the photoresist stripping composition added to the photoresist pattern is recovered (S20), ozone gas is added to the recovered photoresist stripping composition, and the photoresist impurities contained in the photoresist stripping composition are removed. Decompose (S30).

  The photoresist stripping composition prior to addition to the photoresist pattern comprises from about 80 to about 98.5% by weight sulfone compound, from about 1 to about 10% by weight lactone compound, and from about 0.1 to about 5% alkyl sulfonic acid. %including.

  FIG. 2 is a schematic view showing a photoresist stripping apparatus that can be used in a photoresist stripping method according to an embodiment of the present invention.

  As shown in FIG. 2, the photoresist stripping apparatus 10 includes a chamber 100, a conveyor 17, a first tank 110 ′, a second tank 120 ′, a third tank 130, an ozone reactor 140 ′, and a degassing apparatus 150. And a new liquid tank 160.

  The display board P including the photoresist pattern is transferred into the chamber 100 by the conveyor 17. The chamber 100 may be divided into a first partition 107 and a second partition 108 to form a plurality of buses, for example, a first bus 102, a second bus 104, and a third bus 106. The chamber 100 may include first to sixth nozzles 115, 116, 124 ′, 126, 132, 134 for spraying the photoresist stripping composition.

  The conveyor 17 serves to supply the display plate P to the inside of the chamber 100. Preferably, the display plate P passes through the chamber 100 with a certain inclination. The display panel P can continuously move from the load part 20 disposed first through the chamber 100 to the unload part 30 from which the display panel P is discharged. The display panel P can pass through each bus continuously, or can be moved to the next bus after stopping for a certain time in each bus while the photoresist stripping composition is sprayed. The photoresist stripping composition sprayed on the display panel P flows to the bottom of each bus by gravity.

  When the conveyor 17 has a certain inclination from the load part 20 to the unload part 30, the photoresist stripping composition sprayed through the nozzles uniformly contacts the display plate P, thereby facilitating process control. In addition, the photoresist stripping composition can be prevented from remaining on the display panel due to sagging of the display panel.

  When the chamber 100 includes a plurality of baths, the photoresist stripping is easy, and the photoresist stripping composition can be collected by classification according to the concentration of the photoresist residue in the photoresist stripping composition.

  As the conveyor 17, a roller type conveyor 17 can be used so that the liquid photoresist stripping composition can be easily discharged, but other transfer means for moving the display plate P inside the chamber 100. Can also be used.

  As a method of causing the display plate P to move within the chamber 100 with a certain inclination, there is a method of inclining the conveyor 17 itself at a certain angle with respect to the horizontal plane. Another method is to use a support (not shown) having a constant tilt angle on the parallel conveyor. The lower surface of the support base is in contact with the conveyor 17, and the display board P is in contact with the upper surface of the support base. The support base may be wedge-shaped so that the upper surface of the support base tilts.

  Specifically, the display board P moves to the first bus 102 of the chamber 100 by the load unit 20. The first bus 102 is defined by a wall of the chamber 100 and a first partition 107 and includes a first nozzle 115 and a second nozzle 116 that spray a photoresist stripping composition.

  The first nozzle 115 serves to spray a photoresist stripping composition for stripping the photoresist on the display panel P, and sprays the photoresist stripping composition perpendicular to the upper surface of the display panel P or at a certain angle. . The second nozzle 116 sprays a photoresist stripping composition onto the lower surface of the display panel P in order to strip the photoresist that has flowed onto the lower surface of the display panel P. The injection amount of the second nozzle 116 can be reduced as compared with the injection amount of the first nozzle 115.

  The photoresist stripping composition sprayed through the first nozzle 115 and the second nozzle 116 dissolves the photoresist pattern formed on the display panel P, flows to the bottom of the first bus 102, and passes through the first discharge line 112. Flows into one tank 110 '.

  The photoresist stripping composition in the first tank 110 ′ is mixed with the photoresist stripping composition supplied from the second tank 120 ′, and is again applied to the display panel P by the first bus 102 through the first nozzle 115 and the second nozzle 116. Be injected.

  After the photoresist pattern is primarily removed on the first bus 102, the display panel P moves to the second bus 104. The photoresist stripping composition supplied from the second tank 120 ′ is sprayed onto the display panel P. The second bus 104 includes a third nozzle 124 ′ and a fourth nozzle 126 that spray the photoresist stripping composition supplied from the second tank 120 ′ onto the display panel P. The injection method of the third nozzle 124 ′ and the fourth nozzle 126 is substantially the same as that of the first nozzle 115 and the second nozzle 116. However, since the sprayed photoresist stripping composition is supplied from the second tank 120 ', it contains less impurities such as a photoresist component than the photoresist stripping composition stored in the first tank 110'.

  The photoresist stripping composition sprayed on the display panel P in the second bus 104 flows to the bottom of the second bus 104 and flows into the first tank 110 ′ through the second discharge line 114.

  After the secondary photoresist pattern is peeled off by the second bus 104, the display panel P moves to the third bus 106. The photoresist stripping composition supplied from the third tank 130 is sprayed onto the display panel P. The third bus 106 includes a fifth nozzle 132 and a sixth nozzle 134 that spray the photoresist stripping composition supplied from the third tank 130 onto the display panel P. The injection method of the fifth nozzle 132 and the sixth nozzle 134 is substantially the same as the injection method of the first nozzle 115 and the second nozzle 116 described above. However, since the sprayed photoresist stripping composition is supplied from the third tank 130, the amount of impurities contained is smaller than that of the photoresist stripping compositions of the first tank 110 'and the second tank 120'. The third tank 130 is for receiving a photoresist stripping composition ozone-treated for reuse and a new photoresist stripping composition supplied from the new liquid tank 160.

  The photoresist stripping composition sprayed on the display panel P in the third bus 106 flows to the bottom of the third bus 106 and flows into the second tank 120 ′ through the third discharge line 122.

  The chamber 100 of the photoresist stripping apparatus includes three buses, but the number of buses can be further increased or decreased as necessary. The arrangement of the photoresist stripping composition and the storage tank for storing the photoresist stripping composition can be variously changed according to need.

  The photoresist stripping composition stored in the first tank 110 ′ is injected into the display panel P through the first bus 102 and flows into the display panel P through the first discharge line 112. Since the photoresist stripping composition that is sprayed on the substrate flows in through the second discharge line 114, the photoresist concentration is relatively high. A part of the photoresist stripping composition in the first tank 110 ′ is sprayed to the display panel P through the first and second nozzles 115 and 116 of the first bus 102, and the rest is discharged to the ozone reactor 140 ′. When the photoresist residue concentration of the photoresist stripping composition is higher than the standard, it is not supplied to the ozone reactor 140 ′ but is discharged through the waste liquid discharge port 147 in the first tank 110 ′.

  The ozone reactor 140 'serves to regenerate the photoresist stripping composition by decomposing the photoresist residue from the already used photoresist stripping composition. The photoresist is an organic film and is peeled off through a chemical wet process by the photoresist stripping composition. Therefore, the photoresist component is dissolved in the used photoresist stripping composition. Even if the used photoresist stripping composition contains a certain amount of photoresist residue, it is possible to perform the function of stripping the photoresist film again, but it is included in the photoresist stripping composition. The display panel P is contaminated by impurities, and the efficiency is reduced in peeling the photoresist film.

Accordingly, ozone (O ₃ ) gas is used in the present invention in order to decompose organic substances in the used photoresist stripping composition. Ozone is a more powerful oxidant than hydrogen peroxide and does not produce new reactants in solution.

  The ozone reactor 140 ′ includes a space for accommodating the used photoresist stripping composition therein, and includes an ozone gas inlet 145 for supplying ozone gas to the photoresist stripping composition.

When ozone gas is added to the photoresist stripping composition containing the photoresist residue, the photoresist residue dissolved or dispersed in the photoresist stripping composition is decomposed into an organic acid, and carbon dioxide (CO ₂ ) and water ( H ₂ O). The solubility of ozone gas is several to several tens of times greater than that of oxygen gas, so if it passes through the photoresist stripping composition in a gaseous state, it reacts relatively easily with the photoresist residue of the photoresist stripping composition. Can be made. When the photoresist stripping composition is reused, the organic acid remaining in the photoresist stripping composition can serve as an additive and improve the photoresist stripping efficiency.

  The deaerator 150 serves to remove ozone remaining in the ozone-treated photoresist stripping composition. Although ozone can dissolve the organic film, it can improve the efficiency at the time of stripping the photoresist. However, ozone acts as a powerful oxidant, so a photoresist stripping composition containing residual ozone is sprayed onto the display panel. If it is done, the display board may be damaged. Therefore, it is preferable to remove residual ozone from the regenerated photoresist stripping composition.

The deaerator 150 includes a space for storing the photoresist stripping composition ozone-treated in the ozone reactor 140 ′, and includes a nitrogen gas inlet 155 for supplying nitrogen (N ₂ ) gas. If nitrogen gas is supplied into a photoresist stripping composition containing ozone, ozone is decomposed to generate oxygen gas and water.

  The reclaimed photoresist stripping composition is supplied to the third tank 130 through the recovery line 170, and mixed with a new photoresist stripping composition supplied from the new liquid tank 160 as necessary. Is sprayed onto the display board P. Accordingly, the display panel P is cleaned with the photoresist stripping composition with relatively few impurities before being discharged to the unload portion 30.

  In the photoresist stripping method according to the embodiment of the present invention, the photoresist stripping composition can be reused by adding ozone gas to the used photoresist stripping composition. In addition, since the above-described photoresist stripping composition used at this time is relatively strong against ozone gas, the photoresist stripping composition component itself does not change in quality or weaken its function when ozone gas is supplied. Only the photoresist residue mixed with the stripping composition can be selectively removed. Therefore, even if the photoresist stripping composition is regenerated and used several times, the cost does not deteriorate in the photoetching process, so that the cost for the photoetching process can be significantly reduced.

  Hereinafter, the performance of the photoresist stripping composition according to an embodiment of the present invention will be described through specific experimental examples.

Example 1:
A photoresist stripping composition was prepared by mixing about 94.8% by mass of tetrahydrothiophene 1,1-dioxide, about 5% by mass of γ-butyrolactone, and about 0.2% by mass of alkylsulfonic acid.

<Experimental Example 1-Evaluation of Photolytic Decomposition Performance>
The photoresist stripping composition of Example 1 was mixed with powdered photoresist and stirred to prepare a solution having a photoresist content of about 5% by mass with respect to the total mass. The mixed solution was put into a reactor, ozone gas was added, and after 3 hours from the time when the ozone gas was added, the respective photoresist contents after 5 hours were measured. The results obtained thereby are shown in Table 1 below.

  Referring to Table 1, it can be seen that when ozone is added to the photoresist stripping composition of Example 1, the photoresist is degraded relatively quickly.

  The initial photoresist content in Table 1 was set higher than the photoresist concentration of the photoresist stripping composition used in the actual process in order to confirm the photoresist decomposition performance of the photoresist stripping composition according to one embodiment of the present invention. It is. Therefore, the photoresist stripping composition according to one embodiment of the present invention actually has excellent performance even in the photoresist stripping process.

<Experimental Example 2-Evaluation of Photoresist Stripping Performance>
In order to investigate the resist stripping performance according to Example 1 of the present invention, DTFR-3650B (Toshin Semi-Chem, positive resist) was applied on glass, then at about 150 ° C. for about 10 minutes (test piece 1) and about 160 ° C. The resist stripping time of the baked test piece was measured for about 10 minutes (test piece 2). The size of the test piece was about 2 cm × 4 cm, and the peeling completion time for each test piece was measured.

  Further, in order to examine the change in resist stripping performance before and after the ozone treatment, the composition of the example was subjected to ozone treatment for about 5 hours, and then this experiment was performed again.

  The result can be confirmed from Table 2 and FIG. FIG. 3 is a scanning electron microscope (SEM) photograph of a test piece obtained as a result of Experimental Example 2 of the present invention. Referring to Table 2 and FIG. 3, it was found that the peeling performance was improved after the ozone treatment, and no residue was observed when the test piece was observed with a microscope.

  It can be seen that the photoresist stripping composition according to Example 1 of the present invention does not form a residue even when reused and has excellent photoresist stripping performance.

<Experimental Example 3—Stability Evaluation of Photoresist Stripping Composition>
As a test piece for examining the presence or absence of corrosion of the wiring metal during the process of applying the photoresist stripping composition according to Example 1 of the present invention, molybdenum and aluminum are sequentially deposited on a glass display plate in a thickness of 200 mm and 2000 mm. After the wiring was shaped with DTFR-3650B, it was etched by a wet etching method (test piece 3). The size of the test piece was about 2 cm × 4 cm. After the composition of Example 1 was kept at about 70 ° C. and immersed for about 30 minutes, it was washed with pure water, and then the lower film quality was measured with a scanning electron microscope (SEM). The presence or absence of corrosion was observed.

  The result can be confirmed through Table 3 and FIG. FIG. 4 is an SEM photograph of a test piece obtained as a result of Experimental Example 3 of the present invention. Referring to Table 3 and FIG. 4, it can be seen that there is no corrosion on the wiring metal. Thus, it can be seen that the photoresist stripping composition according to Example 1 of the present invention has excellent stability that does not cause corrosion of the wiring metal even when it is reused.

  The photoresist stripping method according to the embodiment of the present invention can be used not only for manufacturing a flat panel display such as a liquid crystal display but also for manufacturing a memory semiconductor display panel and the like. It can also be used to manufacture other electronic devices manufactured using a photoetching process.

  Hereinafter, a method for manufacturing a display device using the photoresist stripping composition according to the embodiment of the present invention will be described.

  FIG. 5 is a layout view illustrating a structure of a thin film transistor array panel for a display device according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view of the thin film transistor array panel of FIG. 5 cut along line VI-VI. is there.

  A plurality of gate lines 121 for transmitting gate signals are formed on the insulating substrate 110. The gate lines 121 extend in the horizontal direction, and a part of each gate line 121 forms a plurality of gate electrodes 124.

  The gate line 121 is made of a metal such as molybdenum (Mo), aluminum (Al), or copper (Cu). In addition, although not shown, a lower film made of molybdenum (Mo) or a molybdenum alloy and an upper film made of aluminum (Al) or an aluminum alloy (AlNd) obtained by adding neodymium (Nd) to aluminum are included. be able to.

  A gate insulating film 140 is formed on the gate line 121, and an island-shaped semiconductor layer 154 and resistive contact layers 163 and 165 are formed thereon. A plurality of data lines 171 and a plurality of drain electrodes 175 are formed on the resistive contact layers 163 and 165 and the gate insulating film 140, respectively.

  The data line 171 extends in the vertical direction and crosses the gate line 121 to transmit a data voltage. A plurality of branches extending from each data line 171 toward the drain electrode 175 form a source electrode 173. The pair of source electrode 173 and drain electrode 175 are separated from each other and are located on opposite sides of the gate electrode 124.

  The data line 171 and the drain electrode 175 including the source electrode 173 can be made of a metal such as molybdenum (Mo), aluminum (Al), or copper (Cu). Alternatively, although not shown, the Mo / Al / Mo structure includes an intermediate film including aluminum or an aluminum alloy, and a lower film and an upper film including molybdenum or a molybdenum alloy, which are located below and above the intermediate film, respectively. Can do.

  The gate electrode 124, the source electrode 173, and the drain electrode 175 form a thin film transistor (TFT) together with the island-shaped semiconductor layer 154, and the channel of the thin film transistor is an island-shaped semiconductor layer between the source electrode 173 and the drain electrode 175. 154.

  A protective film 180 having a contact hole 185 is formed on the data line 171 and the drain electrode 175, and a pixel electrode 191 is formed thereon.

  Hereinafter, a method of manufacturing the TFT array panel shown in FIGS. 5 and 6 according to an embodiment of the present invention will be described in detail with reference to FIGS. 7 to 13 and FIGS. 7 to 13 are cross-sectional views sequentially illustrating a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6 according to an embodiment of the present invention.

  First, as shown in FIG. 7, a metal layer 120 is stacked on an insulating substrate 110 using a gate wiring conductive material. After that, as shown in FIG. 8, a photoresist 40 is applied onto the metal layer 120 by a spin coating method, exposed using a mask 50 including a light transmitting portion 50a and a light shielding portion 50b, and then developed. To do.

  Next, as shown in FIG. 9, the metal layer 120 in the region excluding the portion where the photoresist pattern 40a remains is etched. Next, the photoresist pattern 40a is stripped by adding the photoresist stripping composition according to the above-described embodiment onto the photoresist pattern 40a. As a result, as shown in FIG. 10, a gate line (not shown) including the gate electrode 124 is formed.

  Next, as illustrated in FIGS. 11 to 13, the gate insulating film 140, the island-shaped semiconductor layer 154, and the impurity semiconductor pattern 164 are formed, and the source electrode 173 and the drain electrode 175 are formed. Next, the plurality of island-shaped resistive contact layers 163 and 165 are completed by removing the exposed impurity semiconductor layer portions that are not covered with the source electrode 173 and the drain electrode 175, while the underlying island-shaped semiconductor 154 is formed. Expose. Thereafter, the protective film 180 including the contact hole 185 exposing the drain electrode 175 is formed, and the pixel electrode 191 is formed on the protective film 180 as shown in FIG.

  In forming the island-shaped semiconductor layer 154, the impurity semiconductor pattern 164, the source electrode 173, the drain electrode 175, and the protective film 180, although not shown, a photoresist pattern is formed as in the case of forming the gate electrode 124. The photoresist pattern 40a is stripped using the photoresist stripping composition according to the embodiment of the present invention to form the island-shaped semiconductor layer 154, the impurity semiconductor pattern 164, the source electrode 173, the drain electrode 175, and the protective film 180. To do.

  The photoresist stripping composition used in each stage is collected by the above-described photoresist stripping apparatus, and ozone gas is added to the collected photoresist stripping composition to decompose the photoresist impurities. Next, by removing ozone contained in the photoresist stripping composition, the photoresist stripping composition can be regenerated in the same manner as in the above-described embodiment. As described above, the embodiments of the present invention have been described with reference to the accompanying drawings. However, those who have ordinary knowledge in the technical field to which the present invention belongs do not change the technical idea and essential features of the present invention. It will be understood that other specific forms can be implemented. Accordingly, it should be understood that the embodiments described above are illustrative in all aspects and not limiting.

3 is a flowchart illustrating a photoresist stripping method according to an embodiment of the present invention. It is sectional drawing which shows roughly the photoresist peeling apparatus which can be used for the photoresist peeling method by the Example of this invention. It is a SEM photograph of the test piece (2 places) by the result of Example 2 of this invention. It is a SEM photograph of the test piece (2 places) by the result of Example 3 of this invention. 1 is a layout view illustrating a structure of a thin film transistor array panel of a display device according to an embodiment of the present invention. FIG. 6 is a cross-sectional view of the thin film transistor array panel of FIG. 5 taken along line VI-VI. FIG. 7 is a cross-sectional view (step 1) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6. FIG. 7 is a cross-sectional view (step 2) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6. FIG. 7 is a cross-sectional view (step 3) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6. FIG. 7 is a cross-sectional view (step 4) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6. FIG. 7 is a cross-sectional view (step 5) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6. FIG. 7 is a cross-sectional view (step 6) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6. FIG. 7 is a cross-sectional view (step 7) sequentially illustrating steps of a method of manufacturing the thin film transistor array panel of FIGS. 5 and 6.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Photoresist peeling apparatus 17 Conveyor 20 Loading part 30 Unloading part 100 Chamber 102 1st bus 104 2nd bus 106 3rd bus 107 1st partition 108 2nd partition 110 '1st tank 112 1st discharge line 114 2nd discharge Line 115 1st nozzle 116 2nd nozzle 120 '2nd tank 122 3rd discharge line 124' 3rd nozzle 126 4th nozzle 130 3rd tank 132 5th nozzle 134 6th nozzle 140 'Ozone reactor 145 Ozone gas injection port 147 Waste liquid outlet 150 Deaerator 155 Nitrogen gas inlet 160 New liquid tank 170 Collection line 40 Photoresist 40a Photoresist pattern 50 Mask 50a Translucent part 50b Light-shielding part 110 Insulating substrate 120 Metal layer 121 Gate line 124 Gate Electrode 140 gate insulating film 154 island-shaped semiconductor layer 163 and 165 the ohmic contact layer 164 doped semiconductor pattern 171 data line 173 source electrode 175 drain electrode 180 protective film 185 in contact holes 191 pixel electrode

Claims (11)

  A photoresist stripping composition comprising 80 to 98.5% by mass of a sulfone compound, 1 to 10% by mass of a lactone compound, and 0.1 to 5% by mass of an alkyl sulfonic acid.   The sulfone compound is at least one selected from tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1-dioxide, and tetrahydrothiophene-1 oxide. The photoresist stripping composition of claim 1 comprising   The photoresist stripping composition according to claim 1, wherein the lactone compound comprises at least one selected from γ-butyrolactone, α-methylene-γ-butyrolactone, and γ-hexanolactone.   The photoresist stripping composition according to claim 1, wherein the alkyl sulfonic acid comprises at least one selected from methyl sulfonic acid, ethyl sulfonic acid, propyl sulfonic acid, and butyl sulfonic acid.   The photoresist stripping composition according to claim 2 or 3, wherein the sulfone compound is tetrahydrothiophene 1,1-dioxide and the lactone compound is γ-butyrolactone. Forming a plurality of photoresist patterns on a substrate;
A photoresist stripping composition containing 80 to 98.5% by mass of a sulfone compound, 1 to 10% by mass of a lactone compound and 0.1 to 5% by mass of an alkyl sulfonic acid is added on the photoresist pattern, Removing the photoresist pattern;
A step of recovering the photoresist stripping composition added to the photoresist pattern; and ozone gas is added to the recovered photoresist stripping composition in an ozone reactor to be contained in the photoresist stripping composition. A photoresist stripping method including a step of decomposing photoresist impurities.   The photoresist stripping method according to claim 6, further comprising a step of degassing the photoresist stripping composition and removing ozone contained in the photoresist stripping composition after the step of decomposing the photoresist impurities. .   The sulfone compound is at least one selected from tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1-dioxide, and tetrahydrothiophene-1 oxide. The lactone compound includes at least one selected from γ-butyrolactone, α-methylene-γ-butyrolactone, and γ-hexanolactone, and the alkylsulfonic acid is methylsulfonic acid, ethylsulfone The photoresist stripping method according to claim 6, comprising at least one selected from acid, propylsulfonic acid, and butylsulfonic acid. Forming a gate line including a gate electrode;
Forming a gate insulating film on the gate line;
Forming a semiconductor layer on the gate insulating film;
Forming a data line including a source electrode intersecting with the gate line and a drain electrode facing the source electrode on the semiconductor layer;
Forming a pixel electrode connected to the drain electrode;
At least one of the step of forming the gate line, the step of forming the semiconductor layer, the step of forming the data line and the drain electrode, and the step of forming the pixel electrode is a step of forming a photoresist pattern. Yes,
A photoresist stripping composition containing 80 to 98.5% by mass of a sulfone compound, 1 to 10% by mass of a lactone compound and 0.1 to 5% by mass of an alkyl sulfonic acid is added on the photoresist pattern, Removing the photoresist pattern;
Recovering the photoresist stripping composition added to the photoresist pattern; and adding ozone gas to the recovered photoresist stripping composition to remove photoresist impurities contained in the photoresist stripping composition; A manufacturing method of a display device including a step of disassembling.   The sulfone compound is at least one selected from tetrahydrothiophene 1,1-dioxide, 2-methyltetrahydrothiophene 1,1-dioxide, tetrahydrothiophene-3-ol-1,1-dioxide, and tetrahydrothiophene-1 oxide. The lactone compound includes at least one selected from γ-butyrolactone, α-methylene-γ-butyrolactone, and γ-hexanolactone, and the alkylsulfonic acid is methylsulfonic acid, ethylsulfonic acid The method for manufacturing a display device according to claim 9, comprising at least one selected from propylsulfonic acid and butylsulfonic acid.   The display device manufacturing method according to claim 9, further comprising a step of degassing the photoresist stripping composition and removing ozone contained in the photoresist stripping composition after the step of decomposing the photoresist impurities. Method.

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