JP2009105144A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for uniformly performing processing using a treatment liquid to the entire region of one surface and the other surface of a substrate by removing gas staying in the liquid-tight space of the treatment liquid. <P>SOLUTION: While a wafer W is being held by a lower plate section 4, an opposing surface 9 under the substrate of the lower plate section 4 opposes the lower surface of the wafer. An upper plate 2 is arranged opposite to the wafer W. The treatment liquid is supplied to an upper treatment space 41 sandwiched between the upper surface of the wafer W and an opposing surface 19 above the substrate of the upper plate 2, thus making the upper treatment space 41 liquid-tight by the treatment liquid. The treatment liquid is supplied to a lower treatment space 42 sandwiched between the lower surface of the wafer W and the opposing surface 9 under the substrate of the lower plate section 4, thus making the lower treatment space 42 liquid-tight by the treatment liquid. The upper plate 2 and the lower plate section 4 are formed by hydrophilic quartz. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention includes a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a glass substrate for FED (Filed Emission Display), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, The present invention relates to a substrate processing apparatus that performs processing using a processing liquid on a substrate such as a ceramic substrate.

In a manufacturing process of a semiconductor device or a liquid crystal display device, there is a single-wafer type substrate processing apparatus that processes substrates one by one in order to perform processing with a processing liquid on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. Sometimes used. This single-wafer type substrate processing apparatus opposes a substrate, a substrate holding member that holds the substrate substantially horizontally, a plate that is opposed to the surface of the substrate that is held by the substrate holding member at a predetermined minute interval, and a substrate. And an ejection port that is formed on the opposing surface of the plate and ejects the processing liquid. The processing liquid discharged from the discharge port is supplied to the space between the surface of the substrate and the plate, and makes the space liquid-tight. Since the space between the surface of the substrate and the plate is made liquid-tight by the processing liquid, the processing liquid is in contact with the entire surface of the substrate. Thereby, the process by a process liquid is given to the surface of a board | substrate.
JP 2001-68449 A

However, when the processing liquid is supplied to the space between the surface of the substrate and the plate, the air originally existing in the space may not be completely removed, and a part of the air may remain in the space. . As a result, air bubbles may remain in the liquid-tight space.
In the region where air bubbles stay, the treatment liquid cannot be satisfactorily contacted with the surface of the substrate, and the treatment with the treatment liquid may not proceed appropriately. For this reason, there is a possibility that the processing with the processing liquid becomes non-uniform in the plane of the substrate.

Such a problem is not limited to the case of processing only one surface (front surface) of the substrate, but also exists in the case of processing one surface and the other surface of the substrate.
Accordingly, an object of the present invention is to remove the gas staying in the liquid-tight space of the processing liquid, thereby allowing the processing using the processing liquid to be uniformly performed on the entire one surface and the other surface of the substrate. It is to provide a processing device.

  According to the first aspect of the present invention, the processing liquid is disposed between the first plate (2) opposed to the one surface of the substrate (W) with a space therebetween, and the one surface of the substrate and the first plate. A first processing liquid supply means (27, 28, 33, 34) for supplying and making the space (41) between one surface of the substrate and the first plate liquid-tight with the processing liquid; The second plate (4) disposed opposite to the other surface of the substrate with a space therebetween, and a processing liquid is supplied between the other surface of the substrate and the second plate, and the second surface of the substrate and the second surface And a second processing liquid supply means (16, 17, 23, 24) that makes the space (42) between the first plate and the plate liquid-tight with the processing liquid. A region facing the surface, and a region facing at least the other surface of the substrate of the second plate Quartz In is formed, a substrate processing apparatus.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, the space between the one surface of the substrate and the first plate and the space between the other surface of the substrate and the second plate are made liquid-tight by the processing liquid, thereby The treatment liquid is in contact with the entire area on the other side. Thereby, the process by a process liquid is given to the one side and other side of a board | substrate.

  And the area | region which opposes at least one surface and the other surface of a board | substrate of the 1st plate and 2nd plate which are in contact with a process liquid is formed with the quartz which is a hydrophilic material. Therefore, the gas staying in the liquid-tight space forms a relatively small bubble that is familiar with the first plate or the second plate, and is urged to the outside of the space. Therefore, gas can be removed from each space, and thereby, the processing liquid can be uniformly brought into contact with the entire area of the one surface and the other surface of the substrate. Therefore, it is possible to uniformly treat the entire area of one side and the other side of the substrate.

According to a second aspect of the present invention, there is provided a rotating means for rotating the first plate and the second plate together with the substrate about a predetermined rotation axis (10 central axis) substantially perpendicular to the surface of the substrate. 15. The substrate processing apparatus according to claim 1, further comprising 15).
According to this configuration, the space between the one surface of the substrate and the first plate and the space between the other surface of the substrate and the second plate are maintained in a liquid-tight state, while the first plate and the second plate When both the plate and the substrate are rotated, the gas staying in the space between the rotating plate and the substrate receives the centrifugal force due to the rotation of the first and second plates and the substrate, and the peripheral edge of the substrate It moves toward the part and is discharged out of the space from the peripheral part of the substrate. Thereby, the gas stagnating in the space between the substrate and the first and second plates can be more reliably removed. And even if it is a case where the one side and the other side of a substrate show hydrophobicity, the gas stagnating in the space between a substrate and the 1st and 2nd plates can be removed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.
This substrate processing apparatus is a single wafer type apparatus for performing processing with a processing liquid on both the front surface and the back surface of a semiconductor wafer (hereinafter simply referred to as “wafer”) W which is an example of a substrate. A bottom substrate holding member 1 having a bottomed substantially cylindrical shape for holding W, and a disk-shaped upper plate 2 facing the substrate lower holding member 1 above the substrate lower holding member 1 are provided. A chemical solution and DIW (deionized pure water) are used as a processing solution for processing the front and back surfaces of the wafer W.

  Chemical solutions include hydrofluoric acid, buffered hydrofluoric acid (Buffered HF: liquid mixture of hydrofluoric acid and ammonium fluoride), SC1 (ammonia hydrogen peroxide aqueous solution mixture), SC2 (hydrochloric acid hydrogen peroxide aqueous solution mixture), SPM (sulfuric acid) / Hydrogen peroxide mixture: a mixed solution of sulfuric acid and hydrogen peroxide) and a polymer removing solution. For example, when hydrofluoric acid is used as the chemical solution, an oxide film etching process for removing the oxide film can be performed on the surface of the wafer W by the substrate processing apparatus.

2A is a perspective view of the lower substrate holding member 1, and FIG. 2B is a plan view schematically showing the configuration of the lower substrate holding member 1. FIG. FIG. 2A shows a state where the wafer W is held on the lower substrate holding member 1.
Referring to FIGS. 1, 2A, and 2B, the lower substrate holding member 1 is adjacent to the lower plate portion 4 and the lower plate portion 4 that are formed in a disk shape slightly larger in diameter than the wafer W. An inner annular portion 5 formed in a substantially cylindrical shape surrounding the periphery of the plate portion 4, an outer annular portion 6 formed in a substantially cylindrical shape surrounding the inner annular portion 5, a lower portion of the inner annular portion 5, and an outer annular portion 6. And an annular connecting portion 7 that connects the lower portion of each of the two.

  The lower plate portion 4 is disposed with the substrate facing surface 9 facing the lower surface of the wafer W held by the lower plate portion 4 facing upward. The substrate facing surface 9 is a substantially flat horizontal surface. A plurality of (for example, three) support pins 8 for sandwiching the wafer W are arranged at substantially equal intervals on the peripheral edge of the substrate lower surface 9. The substrate facing surface 9 is opposed to the lower surface of the wafer W supported by the plurality of support pins 8 with a predetermined interval P1 (for example, 2.0 mm to 0.3 mm). The lower plate portion 4 is made of quartz.

The inner annular portion 5 is formed in a substantially cylindrical shape centering on a central axis of a rotating shaft 10 to be described later, and the upper surface thereof is made substantially the same height as the wafer W held by the lower plate portion 4. ing.
The outer annular portion 6 is formed in a substantially cylindrical shape centering on a central axis of a rotating shaft 10 to be described later, and an annular step portion 11 for receiving the periphery of the upper plate 2 at the upper end portion of the inner peripheral surface thereof. Is formed between the inner and outer annular portions 5 and 6. That is, when the upper plate 2 and the annular step portion 11 are fitted, the upper plate 2 is positioned at a processing position described later. The lower surface of the annular step portion 11 is made higher than the upper surface of the inner annular portion 5.

  A waste liquid groove 14 for waste of the chemical liquid and DIW is formed above the connecting portion 7. The waste liquid groove 14 is defined by the outer peripheral surface of the inner annular portion 5, the inner peripheral surface of the outer annular portion 6, and the upper surface of the connecting portion 7, and is centered on the rotational axis of the wafer W (the central axis of the rotational shaft 10 described later). It is an annular groove. In the connecting portion 7, a plurality (for example, six) of waste liquid holes 12 penetrating the upper and lower surfaces are arranged at substantially equal intervals on a circumference centering on the central axis of the rotating shaft 10. Each waste liquid hole 12 is connected to a waste liquid path 13 for leading to a waste liquid treatment facility (not shown). The inner annular portion 5, the outer annular portion 6 and the connecting portion 7 are integrally formed of, for example, polyvinyl chloride.

A rotating shaft 10 that is substantially perpendicular to the surface of the wafer W and extends in the vertical direction is coupled to the lower surface of the lower plate portion 4. A rotational force is input to the rotary shaft 10 from a motor 15.
The rotating shaft 10 is a hollow shaft, and the lower surface processing fluid supply pipe 16 is inserted into the rotating shaft 10. The lower surface processing fluid supply pipe 16 extends to the lower substrate facing surface 9 of the lower plate portion 4 and communicates with the lower discharge port 17 opened at the center of the lower substrate facing surface 9. The lower surface processing fluid supply pipe 16 is rotated with the rotation of the rotary shaft 10. A lower supply pipe 44 in a stationary state is connected to the lower surface processing fluid supply pipe 16 via a rotary joint (not shown). The lower supply pipe 44 is connected to the lower chemical supply pipe 20, the DIW lower supply pipe 21, and the IPA vapor lower supply pipe 22.

A chemical solution from a chemical solution supply source is supplied to the chemical solution supply pipe 20. A chemical solution lower valve 23 for switching supply / stop of the chemical solution is interposed in the middle of the chemical solution supply pipe 20.
The DIW lower supply pipe 21 is supplied with DIW from a DIW supply source. A DIW lower valve 24 for switching the supply / stop of DIW is interposed in the middle of the DIW lower supply pipe 21.

The IPA vapor lower supply pipe 22 is supplied with IPA vapor from an IPA vapor supply source. An IPA steam lower valve 25 for switching supply / stop of IPA steam is interposed in the middle of the IPA steam lower supply pipe 22.
When the chemical lower valve 23 is opened in a state where the DIW lower valve 24 and the IPA vapor lower valve 25 are closed, the chemical from the chemical supply source is supplied with the chemical lower supply pipe 20, the lower supply pipe 44, and the lower surface processing fluid supply pipe. 16 to the lower discharge port 17. Further, when the DIW lower valve 24 is opened in a state where the chemical solution lower valve 23 and the IPA vapor lower valve 25 are closed, DIW from the DIW supply source is supplied to the DIW lower supply pipe 21, the lower supply pipe 44, and the lower surface processing fluid. It is supplied to the lower discharge port 17 through the supply pipe 16. Further, when the IPA vapor lower valve 25 is opened with the chemical solution lower valve 23 and the DIW lower valve 24 closed, the IPA vapor from the IPA vapor supply source is supplied to the IPA vapor lower supply pipe 22, the lower supply pipe 44, and the lower surface. It is supplied to the lower discharge port 17 through the processing fluid supply pipe 16.

The upper plate 2 has a disk shape larger in diameter than the wafer W and is made of quartz. The upper plate 2 is disposed with the substrate upper facing surface 19 facing the wafer W held by the lower plate portion 4 facing downward. The on-substrate facing surface 19 is a flat horizontal surface.
A rotation shaft 26 is fixed to the upper surface of the upper plate 2 along an axis common to the rotation shaft 10. The rotating shaft 26 is formed in a hollow shape, and an upper surface processing fluid supply pipe 27 is inserted into the rotating shaft 26. The upper processing fluid supply pipe 27 extends to the upper substrate facing surface 19 of the upper plate 2 and communicates with the upper discharge port 28 opened at the center of the upper substrate facing surface 19.

The upper surface processing fluid supply pipe 27 is rotated with the rotation of the rotating shaft 26. An upper supply pipe 43 in a stationary state is connected to the upper surface processing fluid supply pipe 27 via a rotary joint (not shown). Connected to the upper supply pipe 43 are a chemical upper supply pipe 30, a DIW upper supply pipe 31, and an IPA vapor upper supply pipe 32.
The chemical solution supply pipe 30 is supplied with a chemical solution from a chemical solution supply source. A chemical solution upper valve 33 for switching supply / stop of the chemical solution is interposed in the middle of the chemical solution supply pipe 30.

The DIW supply pipe 31 is supplied with DIW from a DIW supply source. A DIW upper valve 34 for switching supply / stop of DIW is interposed in the middle portion of the DIW upper supply pipe 31.
The IPA vapor upper supply pipe 31 is supplied with IPA vapor from an IPA vapor supply source (not shown). An IPA steam upper valve 35 for switching the supply / stop of IPA steam is interposed in the middle of the IPA steam upper supply pipe 31.

  When the chemical liquid upper valve 33 is opened in a state where the DIW upper valve 34 and the IPA vapor upper valve 35 are closed, the chemical liquid from the chemical liquid supply source is supplied with the chemical upper supply pipe 30, the upper supply pipe 43, and the upper processing fluid supply pipe. 27 to the upper discharge port 28. Further, when the DIW upper valve 34 is opened in the state where the chemical liquid upper valve 33 and the IPA vapor upper valve 35 are closed, DIW from the DIW supply source is supplied to the DIW upper supply pipe 31, the upper supply pipe 43 and the upper surface processing fluid. It is supplied to the upper discharge port 28 through the supply pipe 27. Further, when the IPA vapor upper valve 35 is opened in a state where the chemical liquid upper valve 33 and the DIW upper valve 34 are closed, the IPA vapor from the IPA vapor supply source is transferred to the IPA vapor supply pipe 32, the upper supply pipe 43 and the upper surface. It is supplied to the upper discharge port 28 through the processing fluid supply pipe 27.

  The rotary shaft 26 is supported from above by an elevating member 36 that can be raised and lowered. An annular flange portion 37 is formed on the outer peripheral surface of the rotating shaft 26 so as to protrude radially outward at the upper end portion thereof. The elevating member 36 includes an annular support plate 38 that surrounds the outer peripheral surface of the rotating shaft 26 below the flange portion 37. The inner peripheral edge of the support plate 38 has a smaller diameter than the outer peripheral edge of the flange portion 37. When the upper surface of the support plate 38 and the lower surface of the flange portion 37 are engaged, the rotary shaft 26 is supported by the elevating member 36.

  The elevating member 36 is coupled to an elevating drive mechanism 40 for elevating the elevating member 36. When the elevating drive mechanism 40 is driven, the processing position where the upper plate 2 fixed to the rotating shaft 26 is close to the upper surface of the wafer W held by the lower plate portion 4 (shown by a solid line in FIG. 1). And a retreat position (shown by a two-dot chain line in FIG. 1) that is largely retracted above the lower plate portion 4.

The upper plate 2 is lowered to the processing position, and the wafer W is processed using the processing liquid. At the processing position, the upper plate 2 faces the upper surface of the wafer W held by the lower plate portion 4 with a predetermined interval P2 (for example, 2.0 mm to 0.3 mm).
When the elevating drive mechanism 40 is driven and the upper plate 2 is lowered from the retracted position to the processing position, the peripheral portion of the upper plate 2 is received by the annular step portion 11 of the outer annular portion 6. When the elevating member 36 is further lowered, the engagement between the support member 38 and the flange portion 37 is released, and the rotating shaft 26 and the upper plate 2 are separated from the elevating member 36 and the lower substrate holding member 1 is removed. Supported by Therefore, the upper plate 2 is rotated integrally with the lower substrate holding member 1 at the processing position. Accordingly, the upper plate 2, the lower plate portion 4, and the wafer W are rotated about the vertical axis line by inputting a rotational driving force from the motor 15 to the rotation shaft 26 with the wafer W held on the lower plate portion 4. Can do.

FIG. 3 is a block diagram showing an electrical configuration of the substrate processing apparatus.
The substrate processing apparatus includes a control device 50 having a configuration including a microcomputer.
The control device 50 includes a motor 15, a lift drive mechanism 40, a chemical solution upper valve 33, a DIW upper valve 34, an IPA vapor upper valve 35, a chemical solution lower valve 23, a DIW lower valve 24, and an IPA vapor lower valve 25. Connected as.

FIG. 4 is a flowchart for explaining a processing example performed in the substrate processing apparatus. FIG. 5 is a diagram for explaining a processing example performed in the substrate processing apparatus. Hereinafter, a case where the wafer W having a hydrophobic film such as a low-k film formed on the surface is cleaned will be described as an example.
The wafer W to be processed is loaded into the substrate processing apparatus by a transfer robot (not shown), and is held by the lower plate portion 4 of the substrate lower holding member 1 with its surface facing upward. When the wafer W is loaded, the upper plate 2 is in the retracted position.

When the wafer W is held on the lower plate portion 4, the control device 50 drives the lifting drive mechanism 40 to lower the upper plate 2 to the processing position, and the substrate facing surface 19 is placed on the upper surface of the wafer W. It is arranged to face each other (step S2).
When the upper plate 2 is lowered to the processing position, the control device 50 opens the DIW upper valve 34 and discharges DIW from the upper discharge port 28. The DIW from the upper discharge port 28 spreads radially in the upper processing space 41 sandwiched between the upper surface of the wafer W and the substrate upper surface 19 of the upper plate 2 with the upper discharge port 28 as the center. The control device 50 opens the DIW lower valve 24 and discharges DIW from the lower discharge port 17. The DIW from the lower discharge port 17 spreads radially in the lower processing space 42 sandwiched between the lower surface of the wafer W and the lower substrate facing surface 9 of the lower plate portion 4 around the lower discharge port 17. Further, the control device 50 controls the motor 15 to start the rotation of the lower substrate holding member 1. As the substrate lower holding member 1 rotates, the wafer W and the upper plate 2 rotate (step S3). The lower substrate holding member 1, the wafer W, and the upper plate 2 are rotated at a predetermined rotation speed (for example, about 200 rpm) (see FIG. 5A).

  The discharge of DIW from the upper discharge port 28 and the lower discharge port 17 is continued, and the space sandwiched between the upper plate 2 and the lower plate portion 4 is filled with DIW. As a result, the upper processing space 41 and the lower processing space 42 are made liquid-tight by DIW (see FIG. 5B). The DIW overflowing from the upper processing space 41 or the lower processing space 42 circulates in the waste liquid groove 14, the waste liquid hole 12 and the waste liquid path 13 between the substrate upper surface 19 of the upper plate 2 and the upper surface of the inner annular portion 5. Guided to outside wastewater treatment facility.

  When DIW is supplied to the upper processing space 41, the air that originally existed in the upper processing space 41 may not be completely removed, and a part of the air may remain in the upper processing space 41. The air remaining in the upper processing space 41 becomes familiar with the upper plate 2 made of hydrophilic quartz, forms relatively small bubbles, and stays in the upper processing space 41. The air bubbles receive a centrifugal force due to the rotation of the upper plate 2 and are urged toward the peripheral edge of the upper plate 2.

  In addition, when DIW is supplied to the lower processing space 42, the air originally present in the lower processing space 42 may not be completely removed, and a part of the air may remain in the lower processing space 42. The air remaining in the lower processing space 42 becomes familiar with the lower plate portion 4 formed of hydrophilic quartz, forms relatively small bubbles, and stays in the lower processing space 42. The air bubbles receive a centrifugal force generated by the rotation of the lower substrate holding member 1 and the wafer W, and are urged toward the peripheral edge of the lower plate portion 4.

  After a predetermined time (for example, 10 seconds) has elapsed since the upper processing space 41 and the lower processing space 42 are made liquid-tight by DIW, the control device 50 controls the motor 15 to move the substrate lower holding member 1. While stopping the rotation, the DIW upper valve 34 and the DIW lower valve 24 are closed, and the supply of DIW from the upper discharge port 28 and the lower discharge port 17 is stopped (step S5).

  Next, the control device 50 opens the chemical solution upper valve 33 and the chemical solution lower valve 23 and discharges the chemical solution from the upper discharge port 28 and the lower discharge port 17 (step S6, see FIG. 5C). As a result, the DIW in the upper processing space 41 and the lower processing space 42 is sequentially replaced with the chemical solution while the upper processing space 41 and the lower processing space 42 are maintained in a liquid-tight state. The lower processing space 42 is made liquid-tight with a chemical solution.

  Thereafter, the discharge of the chemical solution from the upper discharge port 28 and the lower discharge port 17 is continued, and the processing space 41 and the lower processing space 42 are kept in a liquid-tight state by the chemical solution. Thereby, the chemical liquid can be brought into contact with the upper surface and the lower surface of the wafer W, and the upper surface and the lower surface of the wafer W can be cleaned with the chemical liquid (see FIG. 5D). The chemical liquid overflowing from the upper processing space 41 and the lower processing space 42 sequentially passes through the waste liquid groove 14, the waste liquid hole 12, and the waste liquid path 13 between the substrate upper surface 19 of the upper plate 2 and the upper surface of the inner annular portion 5. To the waste liquid treatment facility outside the figure.

Further, since the upper processing space 41 and the lower processing space 42 are relatively narrow, the upper processing space 41 and the lower processing space 42 can be liquid-tight with a small amount of chemical solution. Thereby, the consumption of a chemical | medical solution can be reduced.
When a predetermined chemical solution processing time (for example, 30 seconds) elapses (YES in step S7), the control device 50 closes the chemical solution upper valve 33 and the chemical solution lower valve 23, and causes the upper discharge port 28 and the lower discharge port 17 to The discharge of the chemical liquid is stopped (step S8).

  Next, the control device 50 opens the DIW upper valve 34 and the DIW lower valve 24, and discharges DIW from the upper discharge port 28 and the lower discharge port 17 (step S9). As a result, the chemicals in the upper processing space 41 and the lower processing space 42 are sequentially replaced with DIW while the liquid-tight state is maintained in the upper processing space 41 and the lower processing space 42, and eventually the upper processing space 41 and The lower processing space 42 is made liquid-tight by DIW.

  Thereafter, the DIW discharge from the upper discharge port 28 and the lower discharge port 17 is continued, and the processing space 41 and the lower processing space 42 are kept in a liquid-tight state by DIW. As a result, DIW can be brought into contact with the upper and lower surfaces of the wafer W, and the chemical solution adhering to the upper and lower surfaces of the wafer W can be washed away with DIW. The DIW overflowing from the upper processing space 41 and the lower processing space 42 sequentially passes through the waste liquid groove 14, the waste liquid hole 12, and the waste liquid path 13 between the substrate upper surface 19 of the upper plate 2 and the upper surface of the inner annular portion 5. To the waste liquid treatment facility outside the figure.

When a predetermined rinsing process time (for example, 180 seconds) has elapsed (YES in step S10), control device 50 closes DIW upper valve 34 and DIW lower valve 24, and passes from upper discharge port 28 and lower discharge port 17 to each other. The supply of DIW is stopped (step S11).
Next, the control device 50 opens the IPA vapor upper valve 35 and the IPA vapor lower valve 25 to discharge IPA vapor from the upper discharge port 28 and the lower discharge port 17 (step S12). Further, the control device 50 controls the motor 15 to start rotation of the wafer W at a predetermined drying speed (for example, 200 rpm) (step S12). Thereby, DIW adhering to the upper and lower surfaces of the wafer W is shaken off by the centrifugal force, and the wafer W is dried.

  In this drying process, the upper substrate facing surface 19 of the upper plate 2 and the lower substrate facing surface 9 of the lower plate portion 4 are opposed to the upper surface and the lower surface of the wafer W, respectively. The lower surface is shielded from the external atmosphere. Then, the IPA vapor is supplied to the upper processing space 41 and the lower processing space 42, whereby DIW adhering to the upper and lower surfaces of the wafer W is replaced with IPA. The lower surface is dried. Therefore, the upper and lower surfaces of the wafer W can be quickly dried without leaving a DIW mark on the lower surface of the wafer W during the drying process.

When a predetermined drying time (for example, 60 seconds) elapses (YES in step S13), control device 50 controls motor 15 to stop rotation of lower substrate holding member 1 and to control IPA vapor upper valve 35 and IPA vapor. The lower valve 25 is closed, and the supply of IPA vapor from the upper discharge port 28 and the lower discharge port 17 is stopped (step S14).
After stopping the lower substrate holding member 1, the control device 50 drives the elevation drive mechanism 40 to raise the upper plate 2 toward the retracted position (step S15). Thereafter, the wafer W is unloaded by a transfer robot (not shown). (Step S16).

As described above, according to this embodiment, the upper processing space 41 and the lower processing space 42 are liquid-tight with the processing liquid, so that the processing liquid is in contact with the entire upper surface and lower surface of the wafer W. . As a result, the upper and lower surfaces of the wafer W are processed with the processing liquid.
The upper plate 2 and the lower plate portion 4 that are in contact with the processing liquid are each formed of quartz, which is a hydrophilic material. For this reason, air bubbles staying in the upper processing space 41 and the lower processing space 42 in a liquid-tight state form relatively small bubbles in the upper plate 2 or the lower plate portion 4. Inspired to the outside. Therefore, air bubbles can be removed from each of the processing spaces 41 and 42, whereby the processing liquid can be uniformly brought into contact with the entire upper surface and lower surface of the wafer W. Therefore, it is possible to uniformly process the entire upper and lower surfaces of the wafer W.

  In addition, when the upper plate 2 and the lower plate portion 4 are rotated, relatively small air bubbles staying in the liquid-tight processing space 41 and the lower processing space 42 are converted into the upper plate 2 and the lower plate portion 4 and In response to the centrifugal force generated by the rotation of the wafer W, the wafer W moves toward the peripheral portions of the upper plate 2 and the lower plate portion 4 and is discharged out of the processing spaces 41 and 42 from the peripheral portions. Thereby, air bubbles staying in the processing space 41 and the lower processing space 42 can be more reliably removed.

As mentioned above, although one Embodiment of this invention was described, this invention can also be implemented with another form.
For example, in the upper plate 2 and the lower plate portion 4, only the portions facing the upper and lower surfaces of the wafer W are formed of quartz, and the other portions are formed of other materials (for example, polyvinyl chloride). May be.

In the above-described embodiment, the upper plate 2 and the lower plate portion 4 are rotated only when air bubbles are removed from the upper processing space 41 and the lower processing space 42. During the rinsing process, the upper plate 2 and the lower plate portion 4 may be rotated.
The upper plate 2 and the lower plate portion 4 are not limited to be rotated in synchronization with each other, and the upper plate 2 and the lower plate portion 4 may be rotated at different speeds, or the upper plate 2 and the lower plate portion 4 may be rotated. Only one of them may be rotated.

  On the other hand, when a hydrophilic film, not a hydrophobic film, is formed on the surface of the wafer W, the upper plate 2 and the lower plate part 4 for removing air bubbles from the upper processing space 41 and the lower processing space 42. Can be omitted. In such a case, air bubbles can be removed from the upper processing space 41 and the lower processing space 42 without rotating the upper plate 2 and the lower plate portion 4.

  In the above-described embodiment, the configuration in which the outer annular portion 6 rises from the substrate lower holding member 1 including the lower plate portion 4 has been described. However, the outer annular portion 6 is formed to hang down from the peripheral portion of the upper plate 2. Alternatively, the outer annular portion 6 may be omitted. In these cases, it is necessary to separately provide a rotation drive mechanism for rotating the upper plate 2.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. It is a perspective view of a lower substrate holding member. It is a top view which shows the structure of a holding | maintenance member under a board | substrate schematically. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is a flowchart for demonstrating the example of a process performed with a substrate processing apparatus. It is a figure for demonstrating the example of a process performed with a substrate processing apparatus.

Explanation of symbols

1 Substrate holding member 2 Upper plate (first plate)
4 Lower plate (second plate)
9 Substrate facing surface 15 Motor (rotating means)
17 Lower discharge port 19 Substrate upper surface 22 IPA vapor lower supply pipe 23 Chemical solution lower valve 24 DIW lower valve 28 Upper discharge port 33 Chemical solution upper valve 34 DIW upper valve 41 Upper processing space 42 Lower processing space P1 Interval P2 Interval W Wafer (substrate)

Claims (2)

A first plate disposed opposite to and spaced apart from one side of the substrate;
A first processing liquid is supplied between the one surface of the substrate and the first plate so that the space between the one surface of the substrate and the first plate is in a liquid-tight state with the processing liquid. Supply means;
A second plate disposed opposite to the other surface of the substrate at an interval;
A second processing liquid is supplied between the second surface of the substrate and the second plate, and a space between the second surface of the substrate and the second plate is made liquid-tight with the processing liquid. Supply means,
A substrate processing apparatus, wherein a region of the first plate facing at least one surface of the substrate and a region of the second plate facing at least the other surface of the substrate are made of quartz.   The substrate processing apparatus according to claim 1, further comprising a rotating unit configured to rotate the first plate and the second plate together with the substrate about a predetermined rotation axis substantially perpendicular to the surface of the substrate.

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