JP2013207272A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which enables a process liquid to spread into a wide range of a substrate while realizing the reduction of the consumption of the process liquid, and to provide a substrate processing apparatus which enables the process liquid to spread into the wide range of the substrate while improving the cleanliness of the substrate.SOLUTION: A substrate processing apparatus 1 includes an upper facing plate 9 that is disposed facing an upper surface of a wafer W held by a spin chuck 4. The upper facing plate 9 includes: a lower surface 35 facing the upper surface of the wafer W so as to be spaced a small distance away from the upper surface of the wafer W; and a nozzle insertion hole 36 formed at a center part of the lower surface. A chemical solution nozzle 5, a rinse liquid nozzle 6, an organic solution nozzle 7, and an inactive gas nozzle 8 are provided so as to be selectively inserted into the nozzle insertion hole 36. A process liquid supplied from the nozzle 5, 6, 7 inserted into the nozzle insertion hole 36 makes a first space 47 formed between the upper surface of the wafer W and the lower surface 35 of the upper facing plate 9 into the airtight state.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo Substrates such as a mask substrate, a ceramic substrate, and a solar cell substrate are included.

  In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a process using a processing liquid is performed on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device. A single-wafer type substrate processing apparatus that processes substrates one by one is, for example, a spin chuck that holds a substrate horizontally and rotates the substrate about a vertical axis passing through the center of the substrate, and is held by the spin chuck. A nozzle for discharging the processing liquid toward the central portion of the main surface of the substrate, and a processing chamber for storing the spin chuck and the nozzle. By discharging the processing liquid from the nozzle while rotating the substrate by the spin chuck, the processing liquid is supplied to the main surface of the substrate, and the main surface of the substrate is processed by the processing liquid.

JP 2008-27931 A

  In the substrate processing apparatus, when the processing liquid is discharged from the nozzle while rotating the substrate by the spin chuck, the processing liquid discharged from the nozzle is supplied to the central portion of the main surface of the substrate. As a result, a substantially circular liquid film of the processing liquid is formed at the center of the main surface of the substrate. The liquid film of the processing liquid spreads outward by receiving a centrifugal force due to the rotation of the substrate. Further, the liquid film of the processing liquid spreads outward as a subsequent processing liquid is supplied to the main surface of the substrate. Therefore, the liquid film of the processing liquid spreads along the main surface of the substrate while maintaining a substantially circular shape.

  However, depending on the surface state of the substrate (hydrophobic, etc.), a plurality of processing liquid streaks extending in the radial direction from the outer edge of the liquid film of the substantially circular processing liquid may be formed. In this case, since the processing liquid is not supplied to the entire main surface of the substrate, the main surface of the substrate cannot be processed uniformly. Furthermore, the mist or particles of the processing liquid floating in the processing chamber may adhere to the region of the main surface of the substrate that is not covered with the processing liquid, thereby contaminating the substrate.

For example, if the processing liquid is discharged from the nozzle at a high flow rate and the substrate is rotated at a high speed, it is possible to suppress or prevent a part of the main surface of the substrate from being exposed. However, if the processing liquid is ejected from the nozzle at a high flow rate, the consumption of the processing liquid required for one process increases, so that the running cost increases.
Further, when the substrate is rotated at a high speed, the processing liquid may be scattered from the substrate vigorously, and the processing liquid bounced off the inner wall of the cup containing the spin chuck or the partition wall of the processing chamber may reattach to the substrate. In this case, particles adhering to the inner wall of the cup may adhere to the substrate together with the processing liquid.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus that can reduce the consumption of processing liquid and can spread the processing liquid over a wide area of the substrate.
Another object of the present invention is to provide a substrate processing apparatus capable of increasing the cleanliness of the substrate and spreading the processing liquid over a wide range of the substrate.

  In order to achieve the above object, the invention according to claim 1 includes a processing chamber (3), and a gripping rotation means (4; 102) housed in the processing chamber and rotating while gripping the substrate (W). A plurality of first nozzles (5, 6, 7; 300) for discharging the processing liquid, and a first main surface of the substrate held by the holding rotation means, and a first main surface facing the first main surface with a space therebetween. A first facing member (9) having a facing surface (35) and a supply hole (36; 36A) opening in a portion facing the central portion of the substrate on the first facing surface; and the first nozzle, Each of the first nozzles arranged at a predetermined processing position by the nozzle moving means, and a nozzle moving means (23, 26, 38) that moves relative to the first rotating member. Formed at a position where processing liquid from can be supplied. The first counter member is supplied to the first space (47) between the one main surface of the substrate and the first counter surface from the first nozzle selectively disposed at the processing position. A substrate processing apparatus (1; 101; 201) that makes the first space liquid-tight by a processing liquid supplied through a hole.

In this section, the alphanumeric characters in parentheses represent reference signs of corresponding components in the embodiments described later, but the scope of the claims is not limited to the embodiments by these reference numerals.
According to this configuration, the plurality of first nozzles are selectively arranged at the processing position. The processing liquid from the first nozzle arranged at the processing position is supplied to the first space through the supply hole, and the first space is made liquid-tight by this processing liquid. In this case, if the distance between the one main surface of the substrate and the first facing surface is set to a minute distance, a small amount of processing liquid is required to make the first space liquid-tight. Thereby, the processing liquid can be spread over a wide area on the one main surface of the substrate while supplying the processing liquid at a small flow rate.

In addition, since the entire area of the one main surface of the substrate that faces the first facing surface is in contact with the processing liquid, the in-plane uniformity of processing with the processing liquid is improved.
Furthermore, it is not necessary to rotate the substrate at high speed in order to spread the processing liquid over a wide area of the substrate. Therefore, it is possible to rotate the substrate at a low speed. In this case, since the momentum of the processing liquid scattered from the substrate is weak, it is possible to suppress the processing liquid containing particles from splashing back from the peripheral member (80). Thereby, the cleanliness of the substrate is increased.

  By the way, when the opposing member (first opposing member) is disposed opposite to the main surface of the substrate, there is a problem in the method of supplying the processing liquid between the opposing member and the main surface of the substrate. For example, it is conceivable that a nozzle (center axis nozzle) is integrally embedded in the facing member, and the discharge port of this nozzle is formed at the center of the facing surface. When a plurality of types of processing liquids are selectively supplied between the opposing member and the main surface of the substrate, one nozzle (piping) is shared during the supply of each processing liquid. There is a risk that different processing solutions may come into contact. When the different types of processing liquids come into contact with each other, the chemical reaction of these processing liquids may cause adverse effects (such as heat generation and gas generation).

  In contrast, according to the first aspect, the processing liquid from the plurality of nozzles is selectively supplied to the first space through the supply hole opened in the first facing member. For this reason, if a nozzle is provided for each type of processing liquid to be ejected, the processing liquid will not be mixed. Thereby, it is possible to spread each of a plurality of types of processing liquids over a wide area on the one main surface of the substrate while preventing contact between different types of processing liquids.

Further, in the case where the facing member as described above is provided, it is necessary to raise and lower the facing member in order to carry the substrate in and out of the holding and rotating means. However, the nozzle and the facing member are raised and lowered integrally. Therefore, there is a problem that the lifting mechanism is enlarged. Therefore, the volume of the internal space of the processing chamber cannot be effectively reduced.
On the other hand, according to the first aspect, the plurality of nozzles are selectively arranged at the processing position by the movement of the first nozzle by the nozzle moving means. Therefore, it is not necessary to raise and lower the first nozzle and the first opposing member integrally. Therefore, it is possible to reduce the size of the mechanism for moving the first facing member, and thus the volume of the internal space of the processing chamber can be effectively reduced.

The first facing surface may be a flat surface.
The supply hole may be formed on a rotation axis of the substrate by the gripping rotation means (a portion facing the rotation center of the substrate). In this case, the first facing member can be rotated.
The supply hole includes a nozzle insertion hole (36) for selectively inserting the plurality of first nozzles, and the processing position is inserted into the nozzle insertion hole. It may be the position of the first nozzle in a state.

The nozzle insertion hole may be formed in a shape that matches the first nozzle.
A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the first opposing member is a disk member (9) having a diameter larger than that of the substrate held by the holding rotation means. is there.
According to this configuration, since the first facing member has a larger diameter than the substrate, the processing liquid can be in contact with the entire area of the one main surface of the substrate. Thereby, the processing liquid can be spread over the entire area of the one main surface of the substrate while reducing the processing liquid consumption.

In the substrate processing apparatus according to an embodiment of the present invention, as described in claim 4, the gripping rotation means (4) may grip the first opposing member so as to be integrally rotatable with the substrate.
According to this configuration, the first opposing member is gripped by the gripping rotation means for gripping the substrate. The gripping and rotating means integrally rotates the substrate and the first opposing member. Since the first counter member is gripped and rotated by the gripping rotation means, a configuration for supporting (holding) the counter member and a configuration for rotating the first counter member are not required. Therefore, the volume of the internal space of the processing chamber can be effectively reduced.

According to a fifth aspect of the present invention, the gripping and rotating means includes a base (12) that is rotatable about a predetermined rotation axis (C), and is erected on the base to cooperate with the substrate and the first opposing member. And a plurality of clamping members (13) to be held / released.
According to a sixth aspect of the present invention, there is provided an engaging member (50) provided so as to be engaged / disengageable with a peripheral edge portion of the first opposing member, and the engagement in an engaged state with the first opposing member. An engagement member moving means (53) for displacing the member between a delivery position where the first opposing member can be delivered to the gripping rotation means and a separation position where the member is separated from the gripping rotation means. Item 6. The substrate processing apparatus according to Item 5.

  According to this configuration, the engaging member is provided so as to be engaged / disengaged with respect to the first opposing member. Further, the engaging member can be displaced between the delivery position and the separation position. In addition, this makes it possible to deliver the first opposing member to the gripping rotation means when the engaging member is in the delivery position. Further, when the engaging member does not hold the first opposing member, the engaging member can be prevented from interfering with the processing by disposing the engaging member at the separation position.

  It is desirable that a plurality of engaging members are provided. In this case, since the plurality of engaging members engage with the peripheral edge portion of the first opposing member to hold the first opposing member, the first opposing member can be stably moved. Further, in this case, as a result of holding the first opposing member by the plurality of engaging members, the load acting on each engaging member is dispersed and reduced, so that the engaging member moving means having a downsized configuration is realized. You can also In this case, since the engaging member moving means can be reduced in size compared to the case where the first opposing member is moved while supporting the central portion of the first opposing member, the volume of the internal space of the processing chamber can be reduced. It can be reduced even more effectively.

The plurality of engaging members may be arranged at equal intervals in the circumferential direction of the first opposing member. More specifically, the plurality of engaging members may be disposed at two locations across the center of the first opposing member.
According to a seventh aspect of the present invention, the engagement member is engageable with a peripheral edge of the first opposing member, and retracted from the engagement posture so as not to engage with the first opposing member. It is a substrate processing apparatus of Claim 6 which has an engaging claw (52) which can change an attitude | position between attitude | positions.

  According to this configuration, by disposing the engaging claw from the retracted posture to the engaging posture while disposing the engaging member opposite to the peripheral portion of the first opposing member, the engaging member is displaced from the peripheral portion of the first opposing member. Can be engaged. Further, the engagement between the engagement member and the first opposing member can be released by displacing the engagement claw from the engagement posture to the retracted posture. Thereby, engagement / disengagement of the engagement member with respect to the first opposing member can be realized with a relatively simple structure.

  The substrate processing apparatus according to another embodiment of the present invention includes a support member (150) that supports a peripheral portion of the first opposing member, and the first opposing member includes the gripping member. And a support member moving means (153) for moving the support member so as to be displaced between a proximity position close to the substrate held by the rotation means and a separation position separating from the holding rotation means. The substrate processing apparatus according to claim 1.

According to this configuration, the first opposing member can be displaced between the proximity position and the separation position by the movement of the support member.
It is desirable that a plurality of support members are provided. In this case, since the plurality of engaging members support the peripheral edge portion of the support member, the first facing member can be stably moved. Further, in this case, as a result of holding the first opposing member by a plurality of support members, the load acting on each support member is dispersed and reduced, so that it is possible to realize a support member moving means having a downsized configuration. . In this case, the support member moving means can be reduced in size compared with the case where the first opposing member is moved while supporting the central portion of the first opposing member, so that the volume of the internal space of the processing chamber can be further increased. It can be reduced more effectively.

The plurality of support members may be arranged at equal intervals in the circumferential direction of the first facing member. More specifically, the plurality of support members may be disposed at two locations across the center of the first opposing member.
According to the ninth aspect of the present invention, the second nozzle (65) having the discharge port (74) for discharging the processing liquid, the other main surface of the substrate held by the holding rotation means, and a distance from the other main surface. And a second opposing surface (76) on which the ejection port is formed, and a second liquid between the other main surface of the substrate and the second opposing surface by the processing liquid ejected from the ejection port. It is a substrate processing apparatus as described in any one of Claims 1-8 which further contains the 2nd opposing member (10) which makes a space (77) a liquid-tight state.

According to this configuration, the processing liquid is supplied from the second nozzle to the second space between the other main surface of the substrate and the second opposing surface of the second opposing member through the ejection port.
The second space is brought into a liquid-tight state by the processing liquid supplied to the second space. In this case, if the distance between the other main surface of the substrate and the second facing surface is set to a minute distance, a small amount of processing liquid is required to make the second space liquid-tight. Thereby, the processing liquid can be spread over a wide area on the other main surface of the substrate while supplying the processing liquid at a small flow rate.

Thereby, one main surface and the other main surface of the substrate can be processed while reducing the consumption of the processing liquid. In addition, since the one main surface and the other main surface of the substrate can be simultaneously processed with the processing liquid, the processing time can be shortened.
The second opposing member is a disk member (10) having a smaller diameter than the substrate gripped by the gripping rotation means, and the discharge port is a substrate on the second opposing surface. It may be formed in a portion facing the rotation center.

According to an eleventh aspect of the present invention, the second facing surface may form a tapered surface that is closer to the substrate gripped by the gripping rotation means as the distance from the ejection port is increased in the radial direction.
The invention according to claim 12 further includes an annular member (202) having a peripheral edge facing surface (203) facing the peripheral edge of the one main surface of the substrate held by the holding rotation means. It is a substrate processing apparatus as described in any one of these.

According to this configuration, it is possible to stop the processing liquid supplied to the first space from flowing out of the first space by the annular member. Thereby, the liquid-tight state of the processing liquid in the first space can be more stably and satisfactorily maintained.
According to this configuration, since the annular member is disposed to face the peripheral portion of the one main surface of the substrate, the distance between the peripheral portion of the one main surface of the substrate and the peripheral portion facing surface of the annular member is The interval between the other parts of the first space is narrower. Therefore, it is possible to stop the processing liquid from flowing out from the first space by the annular member, and thereby it is possible to more stably maintain the liquid-tight state of the processing liquid in the first space.

According to a thirteenth aspect of the present invention, an infrared ray that is disposed on the opposite side of the first counter member from the substrate gripped by the gripping rotation means and heats the processing liquid supplied to the first space. The substrate processing apparatus according to any one of claims 1 to 12, further comprising a lamp (97).
According to this configuration, the processing liquid supplied to the first space is heated via the facing member. Thereby, the temperature of the processing liquid can be increased, and the substrate processing using the processing liquid can be performed satisfactorily.

The irradiation surface (98) of the infrared lamp may have a circular shape (disc shape) or an annular shape.
When the irradiation surface of the infrared lamp is circular, the center of the infrared lamp is preferably on the rotation axis of the substrate, and the outer diameter of the irradiation surface is preferably equal to the substrate diameter. In this case, the temperature uniformity of the treatment liquid in the first space can be increased, and thereby the in-plane uniformity of the treatment can be maintained.

It is sectional drawing which shows typically the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a top view which shows typically the principal part structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a perspective view which shows the structure of the upper opposing board shown in FIG. It is a perspective view which shows the structure of the engaging claw of the engaging unit shown in FIG. It is a side view of the clamping member shown in FIG. 1 (the 1). It is a side view of the clamping member shown in FIG. 1 (the 2). It is a top view of the clamping member shown in FIG. It is a schematic side view of each nozzle shown in FIG. It is sectional drawing which shows the state in which each nozzle shown in FIG. 1 exists in a process position. It is a top view which shows the movement path | route of a chemical | medical solution nozzle and a rinse liquid nozzle. It is a figure which shows the state which has a chemical | medical solution nozzle in a process position. It is a figure which shows the state which has a rinse liquid nozzle in a process position. It is a figure which shows the state which has an organic solvent nozzle in a process position. It is a figure which shows the state which has an inert gas nozzle in a process position. It is a block diagram for demonstrating the electrical structure of the substrate processing apparatus shown in FIG. It is a flowchart for demonstrating the example of a process performed with the substrate processing apparatus shown in FIG. FIG. 2 is a schematic diagram for explaining a processing example performed by the substrate processing apparatus shown in FIG. 1 (No. 1). FIG. 6 is a schematic diagram for explaining a processing example performed by the substrate processing apparatus illustrated in FIG. 1 (part 2); FIG. 8 is a schematic diagram for explaining a processing example performed by the substrate processing apparatus illustrated in FIG. 1 (part 3); It is sectional drawing which shows typically the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows typically the structure of the substrate processing apparatus which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows the modification of this invention. It is a perspective view which shows the other modification of this invention. It is a top view which shows the further another modification of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a plan view schematically showing the main configuration of the substrate processing apparatus 1. In FIG. 2, illustrations other than the main configuration are omitted.
The substrate processing apparatus 1 uses a processing liquid (chemical solution and DIW (deionized water)) to process a circular semiconductor wafer (hereinafter simply referred to as “wafer”) W as an example of the substrate one by one. This is a leaf type substrate processing apparatus. As the chemical liquid, a liquid according to the content of the processing on the surface of the wafer W is used. For example, in the case of a cleaning process for removing particles from the surface of the wafer W, a chemical solution such as SC1 (ammonia-hydrogen peroxide mixture) is used. Further, in the case of a cleaning process for etching an oxide film or the like from the surface of the wafer W, a chemical solution such as hydrofluoric acid or BHF (Buffered HF) is used and remains as a polymer on the surface of the wafer W after the resist is removed. If it is a polymer removal treatment to remove the resist residue, polymers such as SPM (sulfuric acid / hydrogen peroxide mixture) and SC1 (ammonia-hydrogen peroxide mixture) The removal solution is used as a chemical solution. For cleaning treatment to remove metal contaminants, hydrofluoric acid, SC2 (hydrochloric acid / hydrogen peroxide mixture) or SPM (sulfuric acid / hydrogen peroxide mixture: sulfuric acid peroxide) A chemical solution such as hydrogen water is used.

  The substrate processing apparatus 1 includes a spin chuck (gripping rotating means) 4 that rotates a wafer W while holding (holding) the wafer W horizontally in a processing chamber 3 partitioned by a partition wall 2, and a chemical liquid nozzle ( (First nozzle) 5, rinsing liquid nozzle 6 (first nozzle) for discharging DIW, and organic solvent nozzle (for example, IPA (isopropanol) or HFE (hydrofluoroether)) A first nozzle 7, an inert gas nozzle 8 for discharging an inert gas such as nitrogen gas, and a disk-shaped upper counter plate disposed to face the upper surface of the wafer W held by the spin chuck 4. (First counter member) 9 and a disk-shaped lower counter plate 10 (second counter member) disposed to face the lower surface of the wafer W held by the spin chuck 4.

  The spin chuck 4 includes a cylindrical rotary shaft 11 extending vertically, a disk-shaped spin base (base) 12 attached to the upper end of the rotary shaft 11 in a horizontal posture, and a plurality of spin chucks 12 disposed on the spin base 12. (3 or more, for example, 6) holding members 13 and a motor 14 connected to the rotating shaft 11 are included. The plurality of clamping members 13 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the wafer W at the peripheral edge of the upper surface of the spin base 12.

  In this embodiment, not only the wafer W but also the upper counter plate 9 is held by the spin chuck 4. The spin chuck 4 can sandwich the wafer W and the upper opposing plate 9 in the horizontal direction by bringing the clamping members 13 into contact with the peripheral end surface of the wafer W and the peripheral end surface of the upper opposing plate 9 together. Thereby, the wafer W and the upper counter plate 9 are held by the spin chuck 4 so as to be integrally rotatable. Accordingly, when the wafer W and the upper opposing plate 9 are held by the plurality of clamping members 13, the rotational driving force of the motor 14 is input to the rotating shaft 11, whereby a vertical rotating axis passing through the center of the wafer W is obtained. The wafer W and the upper counter plate 9 rotate around C.

  The chemical liquid nozzle 5 is, for example, a straight nozzle that discharges the chemical liquid downward in a continuous flow state. The chemical liquid nozzle 5 is attached to the tip of the first arm 16 that extends substantially horizontally with its discharge port (upper discharge port 15, see FIGS. 8 and 9) facing downward. The chemical nozzle 5 is provided so as to be movable up and down with respect to the first arm 16. The chemical liquid nozzle 5 is coupled to a nozzle lifting mechanism 38 that moves the chemical nozzle 5 up and down relative to the first arm 16.

A chemical liquid supply pipe 17 to which a chemical liquid from a chemical liquid supply source is supplied is connected to the chemical liquid nozzle 5. A chemical liquid upper valve 18 for opening and closing the chemical liquid supply pipe 17 is interposed in the chemical liquid supply pipe 17. When the chemical solution upper valve 18 is opened, the chemical solution is supplied from the chemical solution supply pipe 17 to the chemical solution nozzle 5, and the chemical solution is discharged downward from the chemical solution nozzle 5.
The rinse liquid nozzle 6 is, for example, a straight nozzle that discharges DIW downward in a continuous flow state. The rinse liquid nozzle 6 is attached to the tip of the first arm 16 with its discharge port (upper discharge port 15; see FIGS. 8 and 9) facing downward. The rinse liquid nozzle 6 is provided so as to be movable up and down with respect to the first arm 16. The rinsing liquid nozzle 6 is coupled to a nozzle lifting mechanism 38 that lifts and lowers the rinsing liquid nozzle 6 with respect to the first arm 16. In addition, the nozzle raising / lowering mechanism 38 raises / lowers the chemical | medical solution nozzle 5 and the rinse liquid nozzle 6 mutually independently.

  A rinse liquid supply pipe 21 to which DIW from a rinse liquid supply source is supplied is connected to the rinse liquid nozzle 6. A rinse liquid upper valve 22 for opening and closing the rinse liquid supply pipe 21 is interposed in the rinse liquid supply pipe 21. When the rinse liquid upper valve 22 is opened, DIW is supplied from the rinse liquid supply pipe 21 to the rinse liquid nozzle 6, and DIW is discharged downward from the rinse liquid nozzle 6.

  The base end portion of the first arm 16 is fixed to the upper end of the first arm support shaft 24 (see FIG. 2). The first arm support shaft 24 extends substantially vertically on the side of the spin chuck 4. The first arm support shaft 24 is provided so as to be extendable in the vertical direction and to be rotatable around the first arm support shaft 24. Therefore, the first arm 16 is provided so as to be swingable around the first arm support shaft 24 and is provided so as to be movable up and down (up and down). A first arm moving mechanism 23 (nozzle moving means; see FIG. 2) for moving (swinging or vertically moving) the first arm 16 is coupled to the first arm support shaft 24.

The organic solvent nozzle 7 is, for example, a straight nozzle that discharges the organic solvent downward in a continuous flow state. The organic solvent nozzle 7 is attached to the tip of the second arm 25 extending substantially horizontally with its discharge port (upper discharge port 15; see FIGS. 8 and 9) facing downward.
The base end portion of the second arm 25 is fixed to the upper end of the second arm support shaft 29 (see FIG. 2). The second arm support shaft 29 extends substantially vertically on the side of the spin chuck 4. The second arm support shaft 29 is provided so as to be extendable in the vertical direction and to be rotatable around the second arm support shaft 29. Therefore, the second arm 25 is provided so as to be swingable around the second arm support shaft 29, and is provided so as to be movable up and down (lifted and lowered). A second arm moving mechanism 26 (nozzle moving means, see FIG. 2) for moving (swinging or vertically moving) the second arm 25 is coupled to the second arm support shaft 29.

  An organic solvent supply pipe 27 to which an organic solvent from an organic solvent supply source is supplied is connected to the organic solvent nozzle 7. An organic solvent upper valve 28 for opening and closing the organic solvent supply pipe 27 is interposed in the organic solvent supply pipe 27. When the organic solvent upper valve 28 is opened, the organic solvent is supplied from the organic solvent supply pipe 27 to the organic solvent nozzle 7, and the organic solvent is discharged downward from the organic solvent nozzle 7.

The inert gas nozzle 8 is, for example, a straight nozzle that discharges nitrogen gas downward in a continuous flow state. The inert gas nozzle 8 is attached to the tip of the third arm 30 that extends substantially horizontally with its discharge port (upper discharge port 15; see FIGS. 8 and 9) facing downward.
The base end portion of the third arm 30 is fixed to the upper end of the third arm support shaft 34 (see FIG. 2). The third arm support shaft 34 extends substantially vertically on the side of the spin chuck 4. The third arm support shaft 34 is provided so as to be able to expand and contract in the vertical direction and to be rotatable around the third arm support shaft 34. Therefore, the third arm 30 is provided so as to be swingable around the third arm support shaft 34 and is provided so as to be movable up and down (up and down). A third arm moving mechanism 31 (see FIG. 2) for moving (swinging or vertically moving) the third arm 30 is coupled to the third arm support shaft 34. The upper end of the third arm support shaft 34 is set at a position lower than the upper end of the second arm support shaft 29. Therefore, the third arm 30 swings in a lower horizontal plane than the second arm 25.

  An inert gas supply pipe 32 to which nitrogen gas from an inert gas supply source is supplied is connected to the inert gas nozzle 8. The inert gas supply pipe 32 is provided with an inert gas upper valve 33 for opening and closing the inert gas supply pipe 32. When the inert gas upper valve 33 is opened, nitrogen gas is supplied from the inert gas supply pipe 32 to the inert gas nozzle 8, and nitrogen gas is discharged downward from the inert gas nozzle 8. In FIG. 2, only the configuration of the processing chamber 3, the spin chuck 4, the upper facing plate 9, the arms 16, 25, 30, the arm support shafts 24, 29, and 34 is illustrated.

FIG. 3 is a perspective view showing the configuration of the upper opposing plate 9.
With reference to FIG. 1 and FIG. 3, the structure of the upper opposing board 9 is demonstrated.
The upper counter plate 9 is a disk-shaped member. The center of the upper facing plate 9 is disposed on the rotation axis C of the spin chuck 4. The upper facing plate 9 has a circular and flat lower surface (first facing surface) 35. The lower surface 35 has a slightly larger diameter than the wafer W.

While being held by the spin chuck 4, the lower surface 35 of the upper facing plate 9 is in a horizontal posture. In a state in which the wafer W and the upper counter plate 9 are held on the spin chuck 4, the lower surface 35 of the upper counter plate 9 is close to the upper surface of the wafer W (opposite a minute interval). In other words, the entire upper surface of the wafer W faces the lower surface 35 of the upper facing plate 9.
A nozzle insertion hole 36 for inserting the nozzles 5, 6, 7, 8 is formed at the center of the lower surface 35 of the upper facing plate 9. The nozzle insertion hole 36 is an insertion hole that penetrates the upper facing plate 9 in the thickness direction (vertical direction), and the nozzle insertion hole 36 opens on the upper surface 39 and the lower surface 35 of the upper facing plate 9, respectively. The nozzle insertion hole 36 is an insertion hole for selectively inserting and storing the chemical liquid nozzle 5, the rinse liquid nozzle 6, the organic solvent nozzle 7, and the inert gas nozzle 8. The side wall of the nozzle insertion hole 36 is formed in a shape that aligns with the nozzles 5, 6, 7, and 8 (lower portions). In this embodiment, the side wall of the nozzle insertion hole 36 has a conical shape whose diameter increases as it goes upward with the rotation axis C as the center.

The upper facing plate 9 has a substantially flat plate shape, but only the peripheral portion of the nozzle insertion hole 36 is thicker than the other portions, and as shown in FIG. An annular protrusion 37 surrounding the periphery of the nozzle insertion hole 36 is formed.
Further, two hooking hole pairs 40 are formed on the peripheral end surface of the upper facing plate 9. Each hooking hole pair 40 includes a first hooking hole 41 and a second hooking hole 41 that are two hooking holes formed adjacent to each other. The first hook hole 41 and the second hook hole 42 have the same shape. The first hooking hole 41 is a hooking hole for inserting a first claw 44 (see FIG. 4) of an engaging claw 52 (see FIG. 4) described later. The second hooking hole 42 is a hooking hole for inserting the second hook 45 (see FIG. 4) of the engaging hook 52. The first hooking hole 41 and the second hooking hole 42 have shapes aligned with first claws 44 and second claws 45, which will be described later, respectively. That is, each of the hooking holes 41 and 42 has a flat cross-sectional shape and extends in a horizontal direction along a substantially normal direction (a direction toward the rotation center). The two hooking hole pairs 40 are 180 degrees out of phase with each other with respect to the center of the upper opposing plate 9 (disposed at opposite symmetrical positions with the center of the upper opposing plate 9 as the center of symmetry). Further, the hooking hole pair 40 is formed at a position shifted in the circumferential direction from the portion sandwiched by the sandwiching member 13 on the circumferential end surface of the upper facing plate 9. Note that the hooking hole pair 40 is not limited to the configuration formed on the peripheral end surface of the upper facing plate 9, and a protrusion is provided on the peripheral edge of the upper surface of the upper facing plate 9, and the hooking hole pair 40 is formed on the protrusion. The structure may be different.

  Examples of the material of the upper counter plate 9 include a fluorine resin material having chemical resistance such as PCTFE (polychlorotrifluorethylene) and quartz. The upper counter plate 9 is made of a plurality of types of counter plates that are made of the same material but have different specifications, and the processing chamber 3 of the processing unit that performs processing with heating by an infrared lamp 97 described later has heat resistance. A counter plate made of a fluororesin material having excellent chemical resistance is used in the processing chamber 3 of the processing unit that employs a quartz counter plate excellent in heat treatment as the upper counter plate 9 and performs processing without heating by the infrared lamp 97. May be adopted as the upper counter plate 9.

In addition, as the upper counter plate 9, a plurality of types of counter plates having different thicknesses from the whole or part of the portion facing the wafer W (the portion excluding the peripheral portion of the upper counter plate 9) are prepared. By selectively adopting these opposing plates as the plate 9, the thickness of the first space 47 to be described later may be varied.
Note that the hooking hole pair 40 may be composed of one hooking hole as long as it has a circumferential width that allows a first pawl 44 and a second pawl 45 to be described later to be inserted simultaneously. .

  As shown in FIG. 1, the substrate processing apparatus 1 includes two engagement units (engagement members) 50 that engage with the peripheral portion of the upper counter plate 9 and hold the upper counter plate 9. One engaging unit 50 is disposed above one hooking hole pair 40 of the upper facing plate 9. The other engagement unit 50 is disposed at a symmetrical position on the opposite side with respect to the rotation axis C with respect to the one engagement unit 50.

  Each engagement unit 50 is supported on the ceiling wall (lower surface) of the processing chamber 3 and is movable in a vertically movable manner. The engagement claw 52 is supported on the unit body 51 so that the posture can be changed. It has. The engagement unit 50 is disposed at a position surrounding the infrared lamp 97 and the lamp support unit 99. In this embodiment, no FFU (fan filter unit) is provided on the ceiling wall of the processing chamber 3.

  In each unit main body 51, the engaging unit 50 can be delivered to the spin chuck 4 (clamping member 13) so that the upper counter plate 9 can be delivered (see FIGS. 5 and 17B), and the clamping member 13. An engagement unit raising / lowering mechanism (engagement member moving means) 53 that moves up and down between a separation position (see FIG. 1) that is largely separated upward from the (delivery position) is coupled. The separation position is set in the vicinity of the ceiling wall of the processing chamber 3.

FIG. 4 is a perspective view showing a configuration of the engaging claw 52 of the engaging unit 50. Hereinafter, a description will be given with reference to FIGS. 1 and 4.
The engaging claw 52 has a rectangular shape, a support plate 46 whose upper end is supported by the unit main body 51, and a first claw 44 and a second claw 45 that extend perpendicularly to the support plate 46 from the lower end side of the support plate 46. have. The first and second claws 44 and 45 each have a flat shape with a rectangular cross section, and extend in parallel with each other at a predetermined interval.

  An engagement claw rotation mechanism 54 built in the unit main body 51 is coupled to the engagement claw 52. By driving the engagement claw rotation mechanism 54, for example, the engagement claw 52 is rotated around the upper end side of the support plate 46, and the engagement claw 52 is moved to the engagement posture (shown by a two-dot chain line in FIG. 1). The posture is changed between the retracted posture (shown by a solid line in FIG. 1). When the engagement claw 52 is in the engagement posture, the first and second claws 44 and 45 extend in the horizontal direction along the substantially normal direction (direction toward the rotation center) of the upper facing plate 9.

  Each engagement unit 50 is lowered from the separation position to the delivery position while the wafer W is placed on the spin chuck 4. At the delivery position, each engagement unit 50 faces the peripheral end surface of the upper facing plate 9. In this state, the engaging claw 52 is changed from the retracted position to the engaged position, whereby each engaging unit 50 is engaged with the peripheral edge of the upper opposing plate 9. Accordingly, the upper opposing plate 9 can be held by the two engaging units 50.

Further, when the engagement claws 52 of each engagement unit 50 are changed from the engagement posture to the retracted posture in a state where the upper opposing plate 9 is held by the two engagement units 50, The engagement with the upper opposing plate 9 is released, and the upper opposing plate 9 is released from the two engagement units 50.
And the engagement unit 50 is arrange | positioned in the separation | separation position except the time of raising / lowering of the upper opposing board 9. As shown in FIG. Thereby, it is possible to prevent the engagement unit 50 from interfering with the movement of the arms 16, 25, 30 and the like.

  Thus, since the upper opposing board 9 is hold | maintained with the two engagement units 50, the upper opposing board 9 can be raised / lowered stably. Furthermore, since the upper opposing plate 9 is held by the two engaging units 50, the load acting on each engaging unit 50 is dispersed and reduced, so that the central portion of the upper opposing plate 9 is supported and the upper opposing plate 9 is supported. Compared with the case where 9 is moved up and down, a relatively simple small engagement unit is employed as the engagement unit 50.

5 and 6 are side views of the clamping member 13. FIG. 7 is a plan view of the clamping member 13.
The spin chuck 4 can hold the wafer W horizontally at two positions, ie, a first support position and a second support position above the first support position, by the plurality of clamping members 13. Further, the spin chuck 4 is placed on the plurality of holding members 13 at a third support position above the second support position (approximately the same as the height of the upper opposing plate 9 when the engagement unit 50 is at the delivery position). The counter plate 9 can be held horizontally. That is, the clamping member 13 horizontally clamps the wafer W at the first support position and horizontally supports the wafer W at the second support position, and horizontally holds the upper opposing plate 9 at the third support position. And a wafer support portion 56 and a pedestal 59 for supporting the sandwiching portion 57. The pedestal 59 is disposed on the spin base 12. In other words, the plurality of clamping members 13 are a plurality of clamping members that cooperatively hold / release the wafer W and the upper opposing plate 9.

The wafer support 56 is disposed inward from the predetermined vertical axis L1.
The clamping part 57 has a V-shaped lower clamping groove 60 opened in the horizontal direction and a V-shaped upper clamping groove 61 formed above the lower clamping groove 60 and opened in the horizontal direction. The lower clamping groove 60 and the upper clamping groove 61 are each directed inward (on the rotation axis C side of the wafer W). The bottom portion of the upper clamping groove 61 is disposed outside the bottom portion of the lower clamping groove 60 (on the side away from the rotation axis C of the wafer W). The clamping part 57 is provided so as to be rotatable around the vertical axis L <b> 1 with respect to the pedestal 59.

  The spin chuck 4 includes a clamping unit rotating mechanism 62 that rotates the clamping unit 57 around the vertical axis L <b> 1 with respect to the pedestal 59. The clamping part rotation mechanism 62 is accommodated in the spin base 12, for example. In the clamping unit rotating mechanism 62, the inner wall of the lower clamping groove 60 of the clamping unit 57 contacts the peripheral end surface of the wafer W, and the inner wall of the upper clamping groove 61 of the clamping unit 57 contacts the peripheral end surface of the upper opposing plate 9. A contact position (position shown in FIG. 6) and a retracted position (in FIG. 6) where the inner wall of the lower holding groove 60 of the holding portion 57 is separated from the peripheral end surface of the wafer W and the inner wall of the upper holding groove 61 is separated from the peripheral end surface of the upper opposing plate The position of the holding portion 57 is rotated around the vertical axis L1. Furthermore, the clamping part rotation mechanism 62 synchronizes each clamping part 57 of the plurality of clamping members 13 and rotates it around the vertical axis L1.

The wafer W carried into the spin chuck 4 is placed on the plurality of wafer support portions 56 in a state where the plurality of sandwiching portions 57 are located at the retracted positions. Since the wafer W is placed on the plurality of wafer support portions 56, each wafer support portion 56 makes point contact with the peripheral edge of the lower surface of the wafer W, and the wafer W is held horizontally at the first support position.
Next, the two engaging units 50 holding the upper opposing plate 9 are lowered to the delivery position, and the upper opposing plate 9 is disposed at the third support position. The upper opposing plate 9 is held in a horizontal posture at the third support position by the engagement unit 50.

  In a state where the upper opposing plate 9 is disposed at the third support position, the clamping unit rotating mechanism 62 rotates each clamping unit 57 of the plurality of clamping members 13 from the retracted position to the contact position. As a result, the peripheral edge of the wafer W enters the lower holding groove 60 and the wafer W is lifted upward by the inclination of the lower holding groove 60. Further, the peripheral edge portion of the upper opposing plate 9 enters the upper holding groove 61. As a result, the wafer W is held horizontally at the second support position, and the upper counter plate 9 is held horizontally at the third support position. At the third support position, the lower surface 35 of the upper opposing plate 9 faces the upper surface of the wafer W held at the second support position with a minute gap (for example, an interval of about 0.5 to 3 mm).

FIG. 8 is a schematic side view of the chemical liquid nozzle 5, the rinse liquid nozzle 6, the organic solvent nozzle 7, and the inert gas nozzle 8. FIG. 9 is a cross-sectional view showing a state where the nozzles 5, 6, 7, and 8 are inserted into the nozzle insertion holes 36.
The chemical liquid nozzle 5 is a nozzle that discharges the chemical liquid while being inserted into the nozzle insertion hole 36 of the upper facing plate 9. The rinse liquid nozzle 6 is a nozzle that discharges DIW while being inserted into the nozzle insertion hole 36 of the upper facing plate 9. The organic solvent nozzle 7 is a nozzle that discharges the organic solvent while being inserted into the nozzle insertion hole 36 of the upper facing plate 9. The inert gas nozzle 8 is a nozzle that discharges nitrogen gas while being inserted into the nozzle insertion hole 36 of the upper facing plate 9. These nozzles 5, 6, 7, and 8 have the same shape and the same dimensions. Each nozzle 5, 6, 7, 8 forms a casing of the nozzle 5, 6, 7, 8 and has a cylinder 20 that extends in the vertical direction. Formed inside each cylinder 20 is a tubular processing fluid flow passage 19 that passes through the nozzles 5, 6, 7, and 8 in the vertical direction. Corresponding supply pipes 17, 21, 27, 32 are connected to the processing fluid flow passages 19 of the nozzles 5, 6, 7, 8.

The lower part of each cylinder 20 has an outer peripheral surface 48 and a lower end surface 49. The outer peripheral surface 48 is formed in a conical surface having a conical shape whose diameter increases toward the upper side. The outer peripheral surface 48 is inclined with respect to the vertical surface at the same inclination angle as the side wall of the nozzle insertion hole 36. In the lower end surface 49, the lower end of the processing fluid flow passage 19 is opened to form the upper discharge port 15.
The position of the nozzle in a state where the nozzles 5, 6, 7, and 8 are inserted into the nozzle insertion hole 36 is referred to as a “processing position”. In a state where the nozzles 5, 6, 7, and 8 are inserted into the nozzle insertion holes 36 (states that are disposed at the processing positions), the upper discharge ports 15 of the nozzles 5, 6, 7, and 8 are below the lower surface 35 To face. In other words, the processing positions are such that each of the nozzles 5, 6, 7, 8 is disposed in the nozzle insertion hole 36, and the lower end surface 49 of each of the nozzles 5, 6, 7, 8 is substantially the same as the lower surface 35 of the upper facing plate 9. It is a position arranged on the same plane.

  The nozzles 5, 6, 7, and 8 (lower portions) are kept in a non-contact state with the side wall of the nozzle insertion hole 36 while being inserted into the nozzle insertion hole 36. For example, when the processing liquid adheres to the side wall of the nozzle insertion hole 36, the processing liquid may be transferred between the different nozzles 5, 6, 7, and 8 through the nozzle insertion hole 36. By keeping the nozzles 5, 6, 7, and 8 and the side wall of the nozzle insertion hole 36 in a non-contact state, it is possible to prevent intrusion of different types of processing liquids.

A nozzle insertion hole 36 is formed in the center of the upper opposing plate 9 (located on the rotation axis C), and the nozzles 5, 6, 7, 8 inserted into the nozzle insertion hole 36 are also present. Since the nozzle insertion hole 36 and the side wall of the nozzle insertion hole 36 are not in contact with each other, the nozzles 5, 6, 7, and 8 can be disposed at the processing positions regardless of whether the upper opposing plate 9 is rotated.
FIG. 10 is a plan view showing movement paths of the chemical liquid nozzle 5 and the rinsing liquid nozzle 6.

  The chemical liquid nozzle 5 and the rinse liquid nozzle 6 are attached to the tip of the first arm 16 in a horizontal posture in the moving direction of the first arm 16. As the first arm 16 swings, the chemical nozzle 5 moves along a trajectory 100A passing on the rotation axis C of the wafer W (spin chuck 4). The track 100 </ b> A has an arc shape having a center on the first arm support shaft 24. Further, the rinsing liquid nozzle 6 also moves along the same track 100 </ b> A by the swing of the first arm 16.

FIGS. 11-14 is a figure which shows the state which has the chemical | medical solution nozzle 5, the rinse liquid nozzle 6, the organic solvent nozzle 7, and the inert gas nozzle 8 in a processing position, respectively.
With reference to FIG. 2 and FIGS. 10-14, the movement of each nozzle 5,6,7,8 is demonstrated.
As shown in FIGS. 2, 10, 11, and 12, a rotational driving force is input from the first arm moving mechanism 23 to the first arm support shaft 24 to keep the first arm support shaft 24 within a predetermined angle range. The first arm 16 can be swung above the spin chuck 4 by rotating the first chuck 16. As the first arm 16 swings, the chemical nozzle 5 and the rinse nozzle 6 move along the track 100A. Thus, the chemical nozzle 5 and the rinsing liquid nozzle 6 are arranged such that the chemical nozzle 5 is positioned on the rotation axis C of the wafer W, the rinsing liquid nozzle 6 is positioned on the rotation axis C of the wafer W, the chemical nozzle 5 and the rinsing liquid. The nozzle 6 can be moved between a first home position (position shown in FIG. 2) located on the side of the spin chuck 4. When the chemical solution is discharged from the chemical solution nozzle 5, the nozzle lifting mechanism (nozzle moving means) 38 (see FIG. 1) is driven from the state where the chemical solution nozzle 5 is arranged on the rotation axis C of the wafer W to drive the chemical solution nozzle 5. Is lowered, the chemical nozzle 5 is disposed at the processing position. When discharging the rinse liquid from the rinse liquid nozzle 6, the nozzle lifting mechanism 38 (see FIG. 1) is driven from the state where the rinse liquid nozzle 6 is disposed on the rotation axis C of the wafer W, so that the rinse liquid nozzle 6 is moved. By being lowered, the rinse liquid nozzle 6 is disposed at the processing position. As shown in FIGS. 11 and 12, when the chemical liquid is discharged from the chemical liquid nozzle 5 or when the DIW is discharged from the rinse liquid nozzle 6, the organic solvent nozzle 7 and the inert gas nozzle 8 are respectively in the second home position and the second home position. There are 3 home positions.

  As shown in FIGS. 2 and 13, a rotational driving force is input from the second arm moving mechanism 26 to the second arm support shaft 29, and the second arm support shaft 29 is rotated within a predetermined angle range. The second arm 25 can be swung above the spin chuck 4. As the second arm 25 swings, the organic solvent nozzle 7 forms an arc shape having a center on the second arm support shaft 29 and moves along a track (not shown) passing on the rotation axis C. Thereby, the organic solvent nozzle 7 can be moved between the position on the rotation axis C of the wafer W and the second home position located on the side of the spin chuck 4. When the organic solvent is discharged from the organic solvent nozzle 7, the second arm 25 is lowered in a state where the organic solvent nozzle 7 is disposed on the rotation axis C of the wafer W, so that the organic solvent nozzle 7 is processed. Placed in position. As shown in FIG. 13, when the organic solvent is discharged from the organic solvent nozzle 7, the chemical liquid nozzle 5 and the rinsing liquid nozzle 6 are each in the first home position, and the inert gas nozzle 8 is in the third home position.

  As shown in FIGS. 2 and 14, a rotational driving force is input from the third arm moving mechanism 31 to the third arm support shaft 34 to rotate the third arm support shaft 34 within a predetermined angle range. The third arm 30 can be swung above the spin chuck 4. By swinging the third arm 30, the inert gas nozzle 8 forms an arc shape having a center on the third arm support shaft 34 and moves along a trajectory (not shown) passing on the rotation axis C. Thereby, the inert gas nozzle 8 can be moved between the position on the rotation axis C of the wafer W and the third home position located on the side of the spin chuck 4. Then, with the inert gas nozzle 8 disposed on the rotation axis C of the wafer W, the third arm 30 is lowered, so that the inert gas nozzle 8 is disposed at the processing position. As shown in FIG. 14, when nitrogen gas is discharged from the inert gas nozzle 8, the chemical liquid nozzle 5 and the rinsing liquid nozzle 6 are in the first home position, and the organic solvent nozzle 7 is in the second home position. At this time, as shown in FIG. 14, the second arm 25 and the third arm intersect each other in plan view. However, as described above, the third arm 30 swings in a horizontal plane lower than the second arm 25. The second arm 25 and the third arm 30 do not interfere with each other.

Referring to FIG. 1 again, the rotating shaft 11 is formed hollow. A lower processing fluid supply pipe (second nozzle) 65 is inserted into the rotary shaft 11.
A lower chemical liquid supply pipe 66, a lower rinse liquid supply pipe 67, a lower organic solvent supply pipe 68, and an inert gas supply pipe 69 are connected to the lower processing fluid supply pipe 65, respectively. A chemical solution from a chemical solution supply source is supplied to the lower chemical solution supply pipe 17. A lower chemical solution valve 70 for opening and closing the lower chemical solution supply pipe 17 is interposed in the middle of the lower chemical solution supply pipe 17. DIW from the rinse liquid supply source is supplied to the middle portion of the lower rinse liquid supply pipe 67. A rinsing liquid lower valve 71 for opening and closing the lower rinsing liquid supply pipe 67 is interposed in the middle of the lower rinsing liquid supply pipe 67. The lower organic solvent supply pipe 68 is supplied with an organic solvent from an organic solvent supply source. An organic solvent lower valve 72 for opening and closing the lower organic solvent supply pipe 68 is interposed in the middle of the lower organic solvent supply pipe 68. The lower inert gas supply pipe 69 is supplied with nitrogen gas from a nitrogen gas supply source. An inert gas lower valve 73 for opening and closing the lower inert gas supply pipe 69 is interposed in the middle of the lower inert gas supply pipe 69.

The chemical solution, DIW, organic solvent and nitrogen gas are selectively supplied to the lower processing fluid by controlling the opening and closing of the chemical solution lower valve 70, the rinse solution lower valve 71, the organic solvent lower valve 72 and the inert gas lower valve 73. It is supplied to the pipe 65.
A lower facing plate (second facing member) 10 is fixed in a horizontal posture at the upper end of the lower processing fluid supply pipe 65. The lower facing plate 10 is a disk-shaped member. The center of the lower facing plate 10 is disposed on the rotation axis C of the spin chuck 4. The lower facing plate 10 and the lower processing fluid supply pipe 65 are integrally formed using a fluorine-based resin material having chemical resistance such as PCTFE (polychlorotrifluorethylene). The lower facing plate 10 has a circular upper surface (second facing surface) 76. The upper surface 76 has a slightly smaller diameter than the wafer W. In a state where the wafer W is held on the spin chuck 4, the upper surface 76 of the lower facing plate 10 faces the lower surface of the wafer W. The upper surface 76 of the lower facing plate 10 is formed in a conical taper surface with the central portion at the bottom. That is, the upper surface 76 has the lowest center portion and becomes higher upward as it is separated from the center portion in the radial direction. The lower facing plate 10 is opposed to the lower surface of the wafer W held by the spin chuck 4 with a minute interval (a narrower portion of the upper surface 76, for example, an interval of about 0.5 to 3 mm).

  The lower processing fluid supply pipe 65 opens at the center (on the rotation axis C) of the upper surface 76 of the lower facing plate 10 to form a lower surface discharge port (discharge port) 74. The chemical solution, DIW, organic solvent, or nitrogen gas in the lower processing fluid supply pipe 65 is discharged from the lower surface discharge port 74. Since the lower surface discharge port 74 is at the lowest position, the chemical liquid, DIW, organic solvent, or nitrogen gas discharged from the lower surface discharge port 74 smoothly flows on the upper surface 76 toward the peripheral edge.

  When the processing liquid (chemical solution, DIW and organic solvent) is discharged from the lower surface discharge port 74 while the wafer W is held on the spin chuck 4, the processing liquid from the lower surface discharge port 74 hits the lower surface of the wafer W, and the wafer The second space 77 between the lower surface of W and the upper surface 76 of the lower facing plate 10 is brought into a liquid-tight state. Then, the processing liquid is in contact with substantially the entire area of the lower surface of the wafer W facing the upper surface 76 of the lower facing plate 10. A nitrogen gas flow passage (not shown) is defined between the outer peripheral surface of the rotary shaft 11 and the inner peripheral wall of the spin base 12 surrounding the rotary shaft 11. The nitrogen gas flow passage is discharged into a narrow space between the lower facing plate 10 and the spin base 12 through a nitrogen gas discharge port (not shown). Nitrogen gas from the nitrogen gas discharge port circulates radially in a narrow space between the lower facing plate 10 and the spin base 12 toward the peripheral edge of the lower facing plate 10.

  The spin chuck 4 is accommodated in a cup (peripheral member) 80. The cup 80 includes a cylindrical first cup 81 and a second cup 82 disposed so as to surround the spin chuck 4, a first guard 83 provided so as to be movable up and down with respect to the first cup 81, and a second A second guard 84 provided so as to be movable up and down with respect to the cup 82, and a guard lifting mechanism 85 that lifts and lowers the first guard 83 and the second guard 84 independently of each other are provided.

  At the bottom of the first cup 81, a waste liquid groove 86 for draining DIW used for processing on the wafer W (or DIW containing chemical liquid) is formed in an annular shape centering on the rotation axis C of the wafer W. Has been. In addition, a recovery groove 87 for recovering the chemical solution used for processing the wafer W is formed in an annular shape around the rotation axis C of the wafer W at the bottom of the second cup 82. Yes. A waste liquid pipe (not shown) and a recovery pipe (not shown) are connected to the waste liquid groove 86 and the recovery groove 87, respectively. The waste liquid piping is connected to a waste liquid treatment facility (not shown). The DIW (or DIW containing a chemical solution) used for processing on the wafer W is guided to a waste liquid treatment facility (not shown) through a waste liquid pipe. The recovery pipe is connected to a recovery processing tank (not shown). The chemical used for processing the wafer W is guided to the recovery processing tank through the recovery pipe. Thereby, the processing liquid used for processing the wafer W is recovered or discarded.

  The first guard 83 has a cylindrical shape and surrounds the periphery of the spin chuck 4. The first guard 83 includes a cylindrical first inclined portion 90 that extends obliquely upward so as to approach the rotation axis C of the wafer W, and a cylindrical first guide portion 91 that extends downward from the lower end of the first inclined portion 90. It has. The upper end portion of the first inclined portion 90 constitutes the inner peripheral portion of the first guard 83. The first inclined portion 90 has a larger diameter than the wafer W and the spin base 12.

  The second guard 84 has a cylindrical shape and surrounds the spin chuck 4 outside the first guard 83. The second guard 84 includes a cylindrical second inclined portion 92 that extends obliquely upward so as to approach the rotation axis C of the wafer W, and a cylindrical second guide portion 93 that extends downward from the lower end of the second inclined portion 92. It has. The upper end portion of the second inclined portion 92 constitutes the inner peripheral portion of the second guard 84. The second inclined portion 92 has a larger diameter than the wafer W and the spin base 12. The second guide part 93 is provided coaxially with the first guide part 91.

The guard elevating mechanism 85 is provided between the guards 83, 84 between an upper position where the upper ends of the guards 83, 84 are located above the wafer W and a lower position where the upper ends of the guards 83, 84 are located below the wafer W. 84 is raised and lowered. The guard lifting mechanism 85 can hold the guards 83 and 84 at an arbitrary position between the upper position and the lower position.
The supply of DIW to the wafer W and the drying of the wafer W are performed in a state where the inner first guard 83 faces the peripheral end surface of the wafer W. When the inner first guard 83 is opposed to the peripheral end surface of the wafer W, the first guard 83 and the second guard 84 are disposed at the upper position. The supply of the chemical solution to the wafer W is performed in a state where the outer second guard 84 faces the peripheral end surface of the wafer W. When the outer second guard 84 is opposed to the peripheral end surface of the wafer W, the first guard 83 is disposed at the lower position and the second guard 84 is disposed at the upper position.

  A disc-shaped infrared lamp 97 is disposed in a horizontal position above the spin chuck 4. The infrared lamp 97 is fixed to the lower surface of a disk-shaped lamp support unit 99 attached to the ceiling wall of the processing chamber 3. The lower surface 98 of the infrared lamp 97 has a circular shape centered on the rotation axis C and a horizontal surface, and an irradiation surface is formed by the lower surface 98. The lower surface 98 has a diameter equivalent to that of the wafer W. As the infrared lamp 97, a short, medium or long wavelength infrared heater represented by a halogen lamp or a carbon heater can be adopted.

  The infrared lamp 97 is used to heat the chemical solution and DIW supplied to the first space 47 (described later) and the second space 77 (described later) via the upper counter plate 9. Since the lower surface 98 of the infrared lamp 97 has a circular shape having the same diameter as the wafer W, the temperature uniformity of the processing liquid in the first space 47 and the processing liquid in the second space 77 can be improved. . Thereby, the in-plane uniformity of processing on the wafer W can be maintained.

The infrared lamp 97 is not limited to a configuration having a circular irradiation surface, and may have a configuration having an annular irradiation surface. In this case, it is necessary to arrange the infrared lamp so that the center of the irradiation surface is disposed on the rotation axis C while the annular irradiation surface is directed downward.
FIG. 15 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 95 configured to include a microcomputer. The control device 95 controls the operation of the motor 14, arm moving mechanisms 23, 26, 31, the engagement unit lifting mechanism 53, the engagement claw rotating mechanism 54, the nozzle lifting mechanism 38, and the like. Further, the control device 95 includes a chemical liquid upper valve 18, a rinse liquid upper valve 22, an organic solvent upper valve 28, a nitrogen gas upper valve 33, a chemical liquid lower valve 70, a rinse liquid lower valve 71, an organic solvent lower valve 72, and an inert gas. The opening / closing operation of the lower valve 73 is controlled.

FIG. 16 is a flowchart for explaining a processing example performed in the substrate processing apparatus 1. 17 to 19 are schematic diagrams for explaining a processing example performed in the substrate processing apparatus 1. This processing example will be described with reference to FIGS. 1, 2, 5, 6, 8, 9, 15 to 19, and the like.
The wafer W to be processed is loaded into the substrate processing apparatus 1 by a transfer robot (not shown) and placed on the spin chuck 4 with its surface facing upward (step S1 shown in FIG. 16). ). Specifically, the wafer support portions 56 (see FIGS. 5 and 6) of each clamping member 13 in a state where the plurality of sandwiching portions 57 (see FIGS. 5 and 6) are located at the retracted position (see FIG. 5). Placed. As a result, the wafer W is held horizontally at the first support position (see FIG. 5). When the wafer W is loaded, the engagement unit 50 is disposed at the separation position while holding the upper counter plate 9 (the engagement claw 52 is in the engagement posture) (FIG. 17A). reference). Moreover, the clamping part 57 of each clamping member 13 exists in a retracted position.

  When the wafer W is held on the spin chuck 4, the control device 95 then controls the engagement unit elevating mechanism 53 to lower each engagement unit 50. Accompanying the lowering of each engagement unit 50, the upper opposing plate 9 supported by the engagement unit 50 is also lowered (step S2 shown in FIG. 16; see FIG. 17B). The lowering of the upper opposing plate 9 is stopped after each engaging unit 50 is lowered to the delivery position, and the upper opposing plate 9 is arranged in a horizontal posture at the third support position (see FIG. 5).

In this state, the control device 95 controls the clamping unit rotating mechanism 62 to rotate the clamping unit 57 of each clamping member 13 from the retracted position to the contact position (see FIG. 6). As a result, the wafer W and the upper counter plate 9 are collectively held by the plurality of holding members 13 of the spin chuck 4 (step S3 shown in FIG. 16).
Thereafter, the control device 95 controls each engagement claw rotation mechanism 54 to change the position of the engagement claw 52 of each engagement unit 50 from the engagement posture to the retracted posture (see FIG. 17C). As a result, the engagement between each engaging claw 52 and the peripheral edge of the upper opposing plate 9 is released, the upper opposing plate 9 is released from the two engaging units 50, and the engagement unit 50 is connected to the spin chuck 4. The delivery of the upper facing plate 9 is completed. Thereafter, the control device 95 controls each engagement unit elevating mechanism 53 to raise each engagement unit 50 to the separation position.

Next, chemical treatment is performed.
The control device 95 controls the first arm moving mechanism 23 to draw the chemical solution nozzle 5 above the spin chuck 4 and arrange it on the rotation axis C, and then controls the nozzle lifting mechanism 38 to control the chemical solution nozzle. 5 is lowered to the processing position. Accordingly, the chemical liquid nozzle 5 is inserted into the nozzle insertion hole 36 of the upper facing plate 9 and disposed at the processing position, and the upper discharge port 15 of the chemical liquid nozzle 5 faces the lower region of the lower surface 35 of the upper opposing plate 9.

Further, the guard lifting mechanism 85 is controlled so that the first guard 83 is disposed at the lower position and the second guard 84 is disposed at the upper position, so that the second guard 84 is opposed to the peripheral end surface of the wafer W. .
After the chemical solution nozzle 5 is disposed at the processing position, the control device 95 starts control of the motor 14 to start integral rotation of the wafer W and the upper counter plate 9 (step S4 shown in FIG. 16). At this time, the rotation speed of the wafer W and the upper opposing plate 9 is a predetermined liquid processing speed (for example, about 30 to 100 rpm).

Further, the control device 95 opens the chemical solution upper valve 18 and the chemical solution lower valve 70 and discharges the chemical solution from the upper discharge port 15 and the lower surface discharge port 74 of the chemical solution nozzle 5 (step S5 shown in FIG. 16; FIG. 18A). )reference).
The chemical liquid discharged from the upper discharge port 15 of the chemical liquid nozzle 5 is supplied to the first space 47 between the upper surface of the wafer W and the lower surface 35 of the upper facing plate 9, and the first space 47 is liquid-tight by the chemical liquid. To be. Since the upper counter plate 9 has a larger diameter than the wafer W, the chemical liquid contacts the entire upper surface of the wafer W when the first space 47 is in a liquid-tight state of the chemical liquid. Since the distance between the upper surface of the wafer W and the lower surface 35 of the upper opposing plate 9 is set to a very small distance, the first space 47 can be made liquid-tight with a small amount of chemical solution. Thereby, the chemical solution can be spread over a wide area on the upper surface of the wafer W while supplying the chemical solution with a small flow rate.

  Further, the chemical liquid discharged from the lower surface discharge port 74 is supplied to the second space 77 between the lower surface of the wafer W and the upper surface 76 of the lower facing plate 10, and the second space 77 is made liquid-tight by the chemical liquid. The Since the distance between the lower surface of the wafer W and the upper surface 76 of the lower opposing plate 10 is set to a very small distance, the second space 77 can be made liquid-tight with a small amount of chemical solution. Can be in contact with the chemical. Thereby, the chemical solution can be spread over a wide area on the lower surface of the wafer W while supplying the chemical solution with a small flow rate.

  The chemical liquid overflowing from the first space 47 and the second space 77 is shaken off by the rotation of the wafer W and the upper opposing plate 9 and scattered toward the sides of the wafer W and the upper opposing plate 9. The chemical solution scattered from the wafer W and the upper counter plate 9 is received by the second guard 84 facing the peripheral end surface of the wafer W. In this process, since the wafer W is rotated at a relatively low speed, the chemical liquid scattered from the wafer W has a weak momentum and is reliably received by the second guard 84. That is, the chemical solution does not rebound from the second guard 84 to the wafer W. The scattered chemical liquid flows down along the inner surface of the second guard 84, is collected in the collection groove 87, and is collected from the collection groove 87 through a collection pipe (not shown).

In this chemical processing, the upper and lower surfaces of the wafer W can be processed while reducing the consumption of the chemical. Further, since the chemical treatment can be simultaneously performed on the upper surface and the lower surface of the wafer W, the processing time can be shortened.
When a predetermined chemical solution processing time (for example, 30 seconds) elapses from the start of the discharge of the chemical solution, the control device 95 closes the chemical solution upper valve 18 and the chemical solution lower valve 70 and controls the motor 14 to stop the spin chuck 4 from rotating. . Thereby, the rotation of the wafer W and the upper counter plate 9 is stopped. Further, the control device 95 controls the nozzle lifting mechanism 38 to raise the chemical solution nozzle 5 and remove it from the nozzle insertion hole 36. Thereafter, the control device 95 controls the first arm moving mechanism 23 to swing the first arm 16 to place the rinse liquid nozzle 6 on the rotation axis C of the spin chuck 4, and thereafter, the nozzle lifting mechanism. 38 is controlled to lower the rinse liquid nozzle 6 to the processing position. Thus, the rinsing liquid nozzle 6 is inserted into the nozzle insertion hole 36 of the upper facing plate 9 and disposed at the processing position, and the upper discharge port 15 of the rinsing liquid nozzle 6 faces the lower region of the lower surface 35 of the upper facing plate 9. .

In addition, the guard elevating mechanism 85 is controlled so that the first guard 83 and the second guard 84 are respectively disposed at the upper positions, so that the first guard 83 is opposed to the peripheral end surface of the wafer W.
After the rinse liquid nozzle 6 is disposed at the processing position, the control device 95 starts control of the motor 14 to start integral rotation of the wafer W and the upper counter plate 9. At this time, the rotation speed of the wafer W and the upper counter plate 9 is a predetermined liquid processing speed (for example, about 30 to 100 rpm).

Further, the control device 95 opens the rinse liquid upper valve 22 and the rinse liquid lower valve 71 and discharges DIW from the upper discharge port 15 and the lower discharge port 74 of the rinse liquid nozzle 6 (step S6 shown in FIG. 16). 18 (b)).
The DIW discharged from the upper discharge port 15 of the rinsing liquid nozzle 6 is supplied to the first space 47 between the upper surface of the wafer W and the lower surface 35 of the upper opposing plate 9, and the first space 47 is liquid-tight by DIW. Put into a state. Since the upper counter plate 9 has a larger diameter than the wafer W, the DIW comes into contact with the entire upper surface of the wafer W when the first space 47 is in a DIW liquid-tight state. Since the distance between the upper surface of the wafer W and the lower surface 35 of the upper counter plate 9 is set to a very small distance, the first space 47 can be made liquid-tight with a small flow of DIW. Thereby, DIW can be spread over a wide range on the upper surface of the wafer W while supplying DIW at a small flow rate.

  The DIW discharged from the lower surface discharge port 74 is supplied to the second space 77 between the lower surface of the wafer W and the upper surface 76 of the lower facing plate 10, and the second space 77 is made liquid-tight by DIW. The Since the distance between the lower surface of the wafer W and the upper surface 76 of the lower facing plate 10 is set to a very small distance, the second space 77 can be made liquid-tight with a small flow rate of DIW. Can be in contact with DIW. Thereby, DIW can be spread over a wide area on the lower surface of the wafer W while supplying DIW at a small flow rate.

  The DIW overflowing from the first space 47 and the second space 77 is shaken off by the rotation of the wafer W and the upper counter plate 9 and scattered toward the sides of the wafer W and the upper counter plate 9. The DIW scattered from the wafer W and the upper opposing plate 9 is received by the first guard 83 facing the peripheral end surface of the wafer W. In this processing, since the wafer W is rotated at a relatively low speed, the DIW scattered from the wafer W has a weak momentum and is reliably received by the first guard 83. That is, there is no DIW rebound from the first guard 83 to the wafer W. The DIW flows down along the inner surface of the first guard 83, is collected in the waste liquid groove 86, and is drained from the waste liquid groove 86 through a waste liquid pipe (not shown).

In the rinsing process, the upper and lower surfaces of the wafer W can be processed while reducing the consumption of DIW. In addition, since the rinsing process can be simultaneously performed on the upper surface and the lower surface of the wafer W, the processing time can be shortened.
When a predetermined rinsing process time (for example, 30 seconds) elapses from the start of DIW discharge, the control device 95 closes the rinse liquid upper valve 22 and the rinse liquid lower valve 71, and DIW from the upper discharge port 15 and the lower discharge port 74. Stop discharging. Further, the control device 95 controls the motor 14 to stop the spin chuck 4 from rotating. Thereby, the rotation of the wafer W and the upper counter plate 9 is stopped. Further, the control device 95 controls the nozzle lifting mechanism 38 to raise the rinse liquid nozzle 6 and remove it from the nozzle insertion hole 36. Thereafter, the control device 95 controls the first arm moving mechanism 23 to return the chemical liquid nozzle 5 and the rinse liquid nozzle 6 to the first home position.

  Next, the control device 95 controls the second arm moving mechanism 26 so that the organic solvent nozzle 7 is pulled out above the spin chuck 4 and disposed on the rotation axis C, and thereafter the second arm moving mechanism 26 is controlled. Then, the organic solvent nozzle 7 is lowered to the processing position. Accordingly, the organic solvent nozzle 7 is inserted into the nozzle insertion hole 36 of the upper facing plate 9 and disposed at the processing position, and the upper discharge port 15 of the organic solvent nozzle 7 faces the lower region of the lower surface 35 of the upper facing plate 9. .

  After the organic solvent nozzle 7 is disposed at the processing position, the control device 95 opens the organic solvent upper valve 28 and the organic solvent lower valve 72 and discharges the organic solvent from the upper discharge port 15 and the lower surface discharge port 74 (FIG. Step S7 shown in FIG. As a result, the organic solvent is supplied to the first space 47 and the second space 77, whereby DIW adhering to the upper and lower surfaces of the wafer W is replaced with the organic solvent, and the volatility of the organic solvent causes the The upper and lower surfaces are dried. For this reason, it is possible to prevent DIW marks and the like from being left on the lower surface of the wafer W during the drying process.

  When a predetermined organic solvent replacement processing time (for example, 30 seconds) elapses from the start of the discharge of the organic solvent, the control device 95 closes the organic solvent upper valve 28 and the organic solvent lower valve 72 to close the upper discharge port 15 and the lower discharge port 74. Discharge of organic solvent from. Further, the control device 95 controls the second arm moving mechanism 26 to raise the organic solvent nozzle 7 and remove it from the nozzle insertion hole 36. Thereafter, the control device 95 controls the second arm moving mechanism 26 to return the organic solvent nozzle 7 to the second home position (position shown in FIG. 2).

  Next, the control device 95 controls the third arm moving mechanism 31 to pull out the inert gas nozzle 8 above the spin chuck 4 and arrange it on the rotation axis C, and then controls the third arm moving mechanism 31. Then, the inert gas nozzle 8 is lowered to the processing position. Thus, the inert gas nozzle 8 is inserted into the nozzle insertion hole 36 of the upper opposing plate 9 and disposed at the processing position, and the upper discharge port 15 of the inert gas nozzle 8 faces the lower region of the lower surface 35 of the upper opposing plate 9. .

In this state, the first guard 83 and the second guard 84 are respectively disposed at the upper positions, and the first guard 83 continues to face the peripheral end surface of the wafer W.
After the inert gas nozzle 8 is disposed at the processing position, the controller 95 controls the motor 15 to rotate the spin base 12 at a predetermined drying speed (for example, about 2500 rpm) (S8: spin drying) The inert gas upper valve 33 and the inert gas lower valve 73 are opened, and nitrogen gas is discharged from the upper discharge port 15 and the lower discharge port 74 (see FIG. 18C). As a result, the wafer W and the upper counter plate 9 are rotated at high speed, and DIW adhering to the upper and lower surfaces of the wafer W after the rinsing process is shaken off by centrifugal force, and the wafer W is dried.

  In the spin dry process, since the lower surface 35 of the upper opposing plate 9 faces the upper surface of the wafer W with a minute gap, the upper surface of the wafer W is shielded from the external atmosphere. Nitrogen gas is supplied to the first space 47 between the upper surface of the wafer W and the upper counter plate 9, and the wafer W and the upper counter plate 9 rotate at the same speed in the same direction, so that the narrow space is reduced. A stable air flow of nitrogen gas is formed in the first space 47 from the inside to the outside. In the spin dry process, the upper surface 76 of the lower facing plate 10 is opposed to the lower surface of the wafer W with a minute gap, so that the upper surface of the wafer W is shielded from the external atmosphere. Nitrogen gas is supplied to the second space 77 between the lower surface of the wafer W and the lower facing plate 10, thereby forming an air flow of nitrogen gas from the inside toward the outside in the narrow second space 77. . Thereby, the upper surface and the lower surface of the wafer W are quickly dried.

  When a predetermined drying time (for example, 30 seconds) elapses from the start of high-speed rotation of the wafer W, the control device 95 controls the motor 14 to stop the rotation of the spin chuck 4. Thereby, the rotation of the wafer W and the upper counter plate 9 is stopped. Further, the control device 95 closes the inert gas upper valve 33 and the inert gas lower valve 73 and stops the supply of nitrogen gas from the upper discharge port 15 and the lower discharge port 74. Further, the control device 95 controls the third arm moving mechanism 31 to raise the inert gas nozzle 8 and remove it from the nozzle insertion hole 36. Thereafter, the control device 95 controls the third arm moving mechanism 31 to return the inert gas nozzle 8 to the third home position (position shown in FIG. 2).

  Moreover, the control apparatus 95 controls each engagement unit raising / lowering mechanism 53, and lowers each engagement unit 50 in a separation position (refer FIG. 1) to a delivery position. In the delivery position, each engagement unit 50 faces the peripheral end surface of the upper opposing plate 9 held by the spin chuck 4. When each engagement unit 50 reaches the delivery position, the control device 95 controls each engagement claw rotation mechanism 54 to change the position of the engagement claw 52 of each engagement unit 50 from the retracted position to the engaged position. Let As a result, each engagement unit 50 engages with the peripheral edge of the upper opposing plate 9.

Next, the control device 95 controls the clamping unit rotating mechanism 62 to rotate the clamping unit 57 of each clamping member 13 from the contact position (see FIG. 6) to the retracted position (see FIG. 5). Thereby, the holding state of the wafer W and the upper opposing plate 9 is released, and the upper opposing plate 9 is transferred to the two engaging units 50 (step S9 shown in FIG. 16).
Next, the control device 95 controls the engagement unit elevating mechanism 53 to integrally raise the engagement unit 50 and the upper opposing plate 9 to the separation position (step S10 shown in FIG. 16).

Thereafter, the wafer W is unloaded from the processing chamber 3 by the transfer robot (step S11 shown in FIG. 16).
After unloading the wafer W, a cleaning process (chamber cleaning process) is performed to clean the inside of the processing chamber 3 with a cleaning liquid (DIW in this embodiment) (step S12 shown in FIG. 16). The cleaning process is performed after the process for the wafer W is completed by the substrate processing apparatus 1 and before the process for the next wafer W is started. In this embodiment, the cleaning process is executed every time the process for one wafer W is completed.

During the cleaning process, the wafer W is not held on the spin chuck 4. Further, the upper counter plate 9 is held by the spin chuck 4 during the cleaning process. In the cleaning process, the upper counter plate 9 and the lower counter plate 10 are mainly cleaned, and the upper counter plate 9 and the lower counter plate 10 after the cleaning are dried.
Prior to the cleaning process, the upper opposing plate 9 is held by the spin chuck 4.

In addition, the guard elevating mechanism 85 is controlled so that the first guard 83 and the second guard 84 are respectively disposed at the upper positions, so that the first guard 83 is opposed to the peripheral end surface of the wafer W.
In the cleaning process, the control device 95 controls the first arm moving mechanism 23 to draw out the rinse liquid nozzle 6 above the spin chuck 4. When the rinse liquid nozzle 6 reaches above the spin chuck 4 (that is, above the upper counter plate 9), the control device 95 opens the rinse liquid upper valve 22. Thereby, DIW is discharged from the upper discharge port 15 of the rinsing liquid nozzle 6, and DIW is sprinkled on the upper surface 39 of the upper opposing plate 9 (see FIG. 19A). Further, the control device 95 controls the motor 14 to rotate the upper counter plate 9 at the upper cleaning processing speed (for example, about 30 to 100 rpm). Further, the control device 95 controls the first arm moving mechanism 23 so that the rinse liquid nozzle 6 is moved between the rotation axis C and the upper edge of the upper opposing plate 9 held by the spin chuck 4. Move back and forth. Thereby, DIW from the rinsing liquid nozzle 6 can be distributed evenly over substantially the entire upper surface 39 of the upper counter plate 9, and the DIW containing the chemical liquid and the chemical liquid adhering to the upper surface 39 of the upper counter plate 9 can be obtained. Can be washed away with DIW.

  The DIW from which the processing solution has been washed away (DIW containing the chemical solution) is shaken off by the rotation of the wafer W and the upper counter plate 9 and scattered toward the sides of the wafer W and the upper counter plate 9. The DIW scattered from the wafer W and the upper opposing plate 9 is received by the first guard 83 facing the peripheral end surface of the wafer W. The DIW flows down along the inner surface of the first guard 83, is collected in the waste liquid groove 86, and is drained from the waste liquid groove 86 through a waste liquid pipe (not shown).

When a predetermined upper cleaning time (for example, 30 seconds) elapses from the start of DIW discharge, the control device 95 controls the motor 14 to stop the rotation of the upper counter plate 9 held by the spin chuck 4.
The control device 95 controls the first arm moving mechanism 23 while the DIW discharge from the rinsing liquid nozzle 6 continues, and arranges the rinsing liquid nozzle 6 on the rotation axis C, and then the nozzle lifting mechanism. 38 is controlled to lower the rinse liquid nozzle 6 to the processing position. As a result, the rinsing liquid nozzle 6 is inserted into the nozzle insertion hole 36 of the upper facing plate 9 and disposed at the processing position, and the upper discharge port 15 of the rinsing liquid nozzle 6 faces the lower region of the lower surface 35 of the upper facing plate 9. .

  Further, the control device 95 controls the motor 14 to rotate the upper facing plate 9 at the inner cleaning processing speed (for example, about 30 to 100 rpm) and opens the rinse liquid lower valve 71. Accordingly, DIW is discharged from the upper discharge port 15 and the lower discharge port 74, and DIW is supplied between the lower surface 35 of the upper facing plate 9 and the upper surface 76 of the lower facing plate 10 (see FIG. 19B). ). As a result, the processing liquid (chemical solution or DIW containing the chemical solution) adhering to the lower surface 35 of the upper counter plate 9 and the upper surface 76 of the lower counter plate 10 can be washed away.

  When a predetermined internal cleaning time (for example, 30 seconds) elapses from the start of lowering of the rinsing liquid nozzle 6, the control device 95 controls the motor 14 to stop the rotation of the upper counter plate 9 held by the spin chuck 4. At the same time, the rinse liquid upper valve 22 and the rinse liquid lower valve 71 are closed. Further, the control device 95 controls the nozzle lifting mechanism 38 to raise the rinse liquid nozzle 6 and remove it from the nozzle insertion hole 36. Thereafter, the control device 95 controls the first arm moving mechanism 23 to return the chemical liquid nozzle 5 and the rinsing liquid nozzle 6 to the first home position (position shown in FIG. 2).

As described above, the upper surface 39 and the lower surface 35 of the upper counter plate 9 and the upper surface 76 of the lower counter plate 10 can be cleaned well.
Next, the upper facing plate 9 and the lower facing plate 10 after being cleaned with the cleaning liquid (DIW) are dried.
The control device 95 controls the third arm moving mechanism 31 to place the inert gas nozzle 8 on the rotation axis C and then lowers it to the processing position. As a result, the inert gas nozzle 8 is inserted into the nozzle insertion hole 36 of the upper opposing plate 9 and disposed at the processing position, and the upper discharge port 15 of the inert gas nozzle 8 faces the lower region of the lower surface 35 of the upper opposing plate 9. .

  Further, the control device 95 controls the motor 14 to rotate the upper counter plate 9 at the inner drying processing speed (for example, about 2500 rpm) and opens the inert gas lower valve 73. As a result, nitrogen gas is discharged from the upper discharge port 15 and the lower discharge port 74, and the nitrogen gas is blown onto the lower surface 35 of the upper facing plate 9 and the upper surface 76 of the lower facing plate 10. Thus, the DIW droplets adhering to the lower surface 35 of the upper counter plate 9 and the upper surface 76 of the lower counter plate 10 are removed, and the upper counter plate 9 and the lower counter plate 10 can be dried.

When a predetermined internal drying time (for example, 30 seconds) has elapsed since the descent start of the inert gas nozzle 8, the control device 95 controls the third arm moving mechanism 31 while continuing to discharge nitrogen gas from the inert gas nozzle 8. Then, the inert gas nozzle 8 is raised and removed from the nozzle insertion hole 36.
Further, the guard lifting mechanism 85 is controlled so that the first guard 83 and the second guard 84 are respectively disposed at the lower positions, so that both the first guard 83 and the second guard 84 face the peripheral end surface of the wafer W. Not done.

  The inert gas nozzle 8 is disposed above the upper counter plate 9. As a result, nitrogen gas from the inert gas nozzle 8 is blown onto the upper surface 39 of the upper facing plate 9. Further, the control device 95 controls the motor 14 to rotate the upper counter plate 9 at the upper drying processing speed (for example, about 2500 rpm). Further, the control device 95 controls the third arm moving mechanism 31 to move the inert gas nozzle 8 between the rotation axis C and the upper edge of the upper opposing plate 9 held by the spin chuck 4. Move back and forth. As a result, nitrogen gas from the inert gas nozzle 8 can be uniformly sprayed over substantially the entire upper surface 39 of the upper opposing plate 9, and DIW droplets adhering to the upper surface 39 of the upper opposing plate 9 can be blown off. it can.

When a predetermined upper drying time (for example, 30 seconds) elapses from the start of the discharge of nitrogen gas, the control device 95 controls the motor 14 to stop the rotation of the upper counter plate 9 held by the spin chuck 4. Thereafter, the control device 95 controls the third arm moving mechanism 31 to return the inert gas nozzle 8 to the third home position (position shown in FIG. 2).
As described above, the upper surface 39 and the lower surface 35 of the upper counter plate 9 and the upper surface 76 of the lower counter plate 10 can be satisfactorily dried.

In this embodiment, the cleaning process is described as being performed after the wafer W is unloaded. However, the cleaning process may be performed before the wafer W is unloaded. In this case, the cleaning process is performed in a state where both the upper opposing plate 9 and the wafer W are held on the spin chuck 4.
It should be noted that the upper position of the first guard 83 and the second guard 84 is included in the movement range of the rinse liquid nozzle 6 when the cleaning liquid (DIW) is supplied to the upper facing plate 9, so that the outer wall (first guard 83) of the cup 80 is included. The second guard 84) can also be cleaned. Further, by including the upper positions of the first guard 83 and the second guard 84 in the moving range of the inert gas nozzle 8 when supplying the nitrogen gas to the upper facing plate 9, the outer wall of the cup 80 (the first guard 83 and the first guard 83). The two guards 84) can also be dried. In these cases, the first guard 83 and the second guard 84 are respectively disposed at the lower positions.

Note that although the cleaning process (chamber cleaning) is performed for each series of processes performed on the wafer W, the process may be performed once for the execution of several wafers W.
The case where DIW is used as the cleaning liquid used in the cleaning process has been described as an example. However, the cleaning liquid is not limited to DIW, and a dilute hydrofluoric acid aqueous solution, carbonated water, electrolytic ion water, ozone water, or the like may be employed as the cleaning liquid. Further, when a chemical solution such as a dilute hydrofluoric acid aqueous solution is used as the cleaning solution, a rinsing process for washing away the cleaning solution may be performed.

Also, the cleaning liquid nozzle can be provided separately from the rinsing liquid nozzle 6.
In addition, infrared rays may be irradiated (radiated) from the infrared lamp 97 in the chemical treatment (S5 shown in FIG. 16: chemical supply). By irradiation with infrared rays from the infrared lamp 97, the boundary portion between the wafer W and the chemical solution can be heated in the entire area of the wafer W. Thereby, the process efficiency of a chemical | medical solution can be improved. Further, the lower surface 98 of the infrared lamp 97 has a disk shape, and the outer diameter of the lower surface 98 is equal to the diameter of the wafer W, so that the entire area of the wafer W is heated uniformly, so that the temperature uniformity of the processing liquid is improved. In this way, in-plane uniformity of processing can be maintained.

  As described above, according to the first embodiment, each of the nozzles 5, 6, 7 is selectively inserted into the nozzle insertion hole 36 (arranged at the processing position), and the nozzles 5, 6, inserted into the nozzle insertion hole 36. When the processing liquid (chemical liquid, DIW and organic solvent) is discharged from 7, the processing liquid is supplied to the first space 47 from the nozzles 5, 6, and 7. Since the nozzles 5, 6, and 7 are individually provided for each type of the processing liquid to be discharged, the processing liquid is not mixed. As a result, the processing liquid can be spread over the entire upper surface of the wafer W with respect to a plurality of types of processing liquids while preventing the different types of processing liquids from being mixed.

In this embodiment, a relatively simple small engagement unit is employed as the engagement unit 50. Therefore, the volume of the internal space of the processing chamber 3 can be reduced more effectively.
In this case, since the volume of the internal space of the processing chamber 3 can be effectively reduced, the atmosphere can be reduced without providing an FFU (fan filter unit) or an exhaust mechanism (chamber exhaust) for controlling the atmosphere. Can be controlled.

  FIG. 20 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 101 according to the second embodiment of the present invention. Of the substrate processing apparatus 101 according to the second embodiment, the same reference numerals as those in FIG. 1 are used for the portions corresponding to the respective parts of the substrate processing apparatus 1 according to the first embodiment (the embodiment shown in FIGS. 1 to 19). Reference numerals are given and description is omitted. The substrate processing apparatus 101 is different from the substrate processing apparatus 1 of the first embodiment in that the spin chuck (gripping and rotating means) 102 holds only the wafer W and does not hold the upper counter plate 9, and the upper counter plate 9 The point is that two engagement units (support members) 150 to be held at all times are provided in place of the engagement unit 50.

  The spin chuck 102 is common to the spin chuck 4 in that it includes a rotating shaft 11, a spin base 12, and a motor 14, but the spin base 12 has a plurality (three or more, for example, six) clamping members 103. Is different from the spin chuck 4 in that it is arranged. The spin chuck 102 can hold the wafer W in the horizontal direction by bringing the holding members 103 into contact with the peripheral end surface of the wafer W at once. In a state where the wafer W is held by the plurality of clamping members 103, the rotational driving force of the motor 14 is input to the rotation shaft 11, whereby the wafer W rotates about the rotation axis C.

Each engagement unit 150 is supported by the ceiling wall (lower surface) of the processing chamber 3 and is movable in a vertically movable manner, like the engagement unit 50 of the first embodiment. And an engaging claw 52 that is supported so that the posture can be changed.
The two engagement units 150 are arranged at positions that surround the outside of the infrared lamp 97 and the lamp support unit 99. One engagement unit 150 is disposed at a position above the peripheral end surface of the upper opposing plate 9 in which one hook hole pair 40 is formed. The other engagement unit 150 is arranged at a symmetrical position on the opposite side with respect to the rotation axis C with respect to the one engagement unit 150.

The engaging claw 52 has the same configuration as that of the engaging claw 52 of the first embodiment, and therefore, the same reference numerals are given.
In each unit main body 51, the engagement unit 150 is largely separated from the spin chuck 102 upward from a proximity position (see FIG. 20) where the upper opposing plate 9 is disposed close to the wafer W held by the spin chuck 102. An engagement unit raising / lowering mechanism (engagement member moving means) 153 that moves up and down between the separated positions is coupled. The separation position is set in the vicinity of the ceiling wall of the processing chamber 3. In the proximity position, the lower surface 35 of the upper facing plate 9 faces the upper surface of the wafer W with a minute gap (for example, an interval of about 0.5 to 3 mm).

Thus, since the upper opposing board 9 is hold | maintained with the two engagement units 150, the upper opposing board 9 can be raised / lowered stably. Furthermore, since the load acting on each engagement unit 150 is dispersed and reduced in order to hold the upper opposing plate 9 by the two engagement units 150, a relatively simple small engagement unit can be used as the engagement unit 150. adopt. Thereby, compared with the case where the center part of the upper opposing board 9 is supported and the upper opposing board 9 is raised / lowered, size reduction of the engagement unit 150 can be achieved.
In the second embodiment, the same processing as that of the first embodiment can be performed, but the weight that the spin chuck 102 needs to hold when the spin chuck 102 rotates as compared with the case of the first embodiment. Can be reduced. The substrate processing apparatus 101 may be provided with a configuration equivalent to the engagement claw rotation mechanism 54 (see FIG. 1 and the like), but the engagement claw 52 is not rotated at least during processing. .

As described above, also in the second embodiment, the same operational effects as those in the first embodiment can be obtained.
In this embodiment, a relatively simple small engagement unit is adopted as the engagement unit 150. Therefore, the volume of the internal space of the processing chamber 3 can be reduced more effectively.

FIG. 21 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 201 according to the third embodiment of the present invention.
Of the substrate processing apparatus 201 according to the third embodiment, portions corresponding to the respective parts of the substrate processing apparatus 1 according to the first embodiment (the embodiment shown in FIGS. 1 to 19) described above are denoted by the same reference numerals as those in FIG. The description is omitted. The substrate processing apparatus 201 is different from the substrate processing apparatus 1 of the first embodiment in that a lower surface (peripheral portion facing surface) 203 facing the peripheral portion of the upper surface of the wafer W at the peripheral portion of the lower surface 35 of the upper facing plate 9. It is the point which has arrange | positioned the annular | circular shaped annular member 202 which has. The annular member 202 has a rectangular cross section, for example. The lower surface 203 of the annular member 202 may be a lyophobic surface or a lyophilic surface. In this embodiment, the annular member 202 is fixed to the lower surface 35 of the upper facing plate 9. A minute gap is formed between the lower surface 35 and the peripheral edge of the upper surface of the wafer W.

  In this embodiment, since the annular member 202 is disposed so as to oppose the peripheral edge of the upper surface of the wafer W, the distance between the peripheral edge of the upper surface of the wafer W and the lower surface 203 is different from that of the first space 47. It is narrower than the interval between the parts. Therefore, the annular member 202 can block the treatment liquid (chemical solution and DIW) from flowing out from the first space 47. Thereby, the liquid-tight state of the processing liquid in the first space 47 can be maintained more stably.

The annular member 202 may be configured by a plurality of divided bodies that are divided in the circumferential direction. Further, the annular member 201 may be formed integrally with the upper facing plate 9.
Although three embodiments of the present invention have been described above, the present invention can be implemented in other forms.
For example, in each embodiment, the lower opposing plate 10 is provided, but a configuration in which the lower opposing plate 10 is not provided may be employed. Even in this case, it is desirable that the lower surface discharge port 74 is formed at the center of the lower surface of the wafer W held by the spin chucks 4, 102.

  In each of the embodiments described above, the nozzle insertion hole 36 is provided in the upper facing plate 9, and the nozzles 5, 6, 7, and 8 are selectively inserted into the nozzle insertion hole 36, so that the processing fluid (chemical solution) into the first space 47 is obtained. , DIW, organic solvent and nitrogen gas). However, as shown in FIG. 22, instead of the nozzle insertion hole 36, a supply hole 36 </ b> A penetrating in the thickness direction (vertical direction) may be formed at the center of the lower surface 35 of the upper facing plate 9. The supply holes 36 </ b> A are opened on the upper surface 39 and the lower surface 35 of the upper facing plate 9.

  And the discharge port 15 of the chemical | medical solution nozzle 5, the rinse solution nozzle 6, the organic solvent nozzle 7, and the inert gas nozzle 8 is each arrange | positioned above 36 A of supply holes, and in this state, discharge of each nozzle 5-8 is carried out. By discharging the chemical liquid, DIW, organic solvent, and nitrogen gas from the outlet 15, these processing fluids are supplied into the first space 47 through the supply holes 36A. In this case, since the nozzles 5 to 8 are not inserted into the supply hole 36 </ b> A, the side wall of the supply hole 36 </ b> A does not need to be formed in a shape that matches the nozzles 5, 6, 7, and 8 (lower portions).

As another modified example, as shown in FIG. 23, a plurality (for example, two) of nozzle insertion holes 36 (or supply holes 36 </ b> A) may be provided in the upper facing plate 9. In this case, the two nozzle insertion holes 36 (supply holes 36A) are arranged symmetrically with the center of the upper opposing plate 9 as the center of symmetry.
As yet another modification, as shown in FIG. 24, a plurality of processing liquid pipes 301 and 302 may be connected to one processing liquid nozzle 300 (first nozzle). As the shape and size of the treatment liquid nozzle 300, the same shape and size as those of the nozzles 5 to 8 are employed. Therefore, the treatment liquid nozzle 300 can be inserted into the nozzle insertion hole 36 (see FIG. 1 and the like). Each of the processing liquid pipes 301 and 302 has a processing liquid discharge port 303 and 304 at an opening on the lower side at a position substantially flush with the lower end surface of the processing liquid nozzle 300. Different types of processing liquids (for example, chemical liquid and DIW, or different types of chemical liquids) may be supplied to the processing liquid pipes 301 and 302.

Furthermore, three or more hooking hole pairs 40 may be arranged at equal intervals in the circumferential direction of the upper opposing plate 9. In this case, three or more engaging claws 52 are also provided corresponding to each hooking hole pair 40.
Furthermore, the shapes of the nozzles 5 to 8 and 300 are not limited to the shapes described above. For example, a cylindrical 20-stage shape having a convex inside may be used.
As mentioned above, although two embodiment of this invention was described, this invention can be implemented also with another form.

Further, the case where DIW is used as the rinse liquid has been described as an example. However, the rinse liquid is not limited to DIW, and carbonated water, electrolytic ion water, ozone water, diluted hydrochloric acid water (for example, about 10 to 100 ppm), reduced water (hydrogen water), etc. may be used as the rinse liquid. it can.
Furthermore, although nitrogen gas was mentioned as an example of inert gas, clean air and other inert gas are employable.

  In addition, various design changes can be made within the scope of matters described in the claims.

DESCRIPTION OF SYMBOLS 1; 101; 201 Substrate processing apparatus 3 Processing chamber 4; 102 Spin chuck (gripping rotation means)
5 Chemical nozzle (first nozzle)
6 Rinsing liquid nozzle (first nozzle)
7 Organic solvent nozzle (first nozzle)
9 Upper counter plate (first counter member)
10 Lower counter plate (second counter member)
12 Spin base
13 Clamping member 23 First arm moving mechanism (nozzle moving means)
26 Second arm moving mechanism (nozzle moving means)
35 Lower surface (first facing surface)
36 Nozzle insertion hole 36A Supply hole 38 Nozzle lifting mechanism (nozzle moving means)
47 1st space 50 Engagement unit (engagement member)
52 engaging claw 53 engaging unit lifting mechanism (engaging member moving means)
65 Lower processing fluid supply pipe (second nozzle)
74 Bottom discharge port (discharge port)
76 Upper surface (second facing surface)
77 Second space 80 cups (peripheral members)
97 Infrared lamp 98 Lower surface (irradiated surface)
150 Engagement unit (support member)
153 Engagement unit lifting mechanism (engagement member moving means)
202 annular member 203 lower surface (peripheral edge facing surface)
300 Treatment liquid nozzle (first nozzle)
C Rotation axis W Wafer (substrate)

Claims (13)

A processing chamber;
Gripping rotation means accommodated in the processing chamber and rotating while gripping the substrate;
A plurality of first nozzles each discharging a treatment liquid;
A supply hole that opens to one main surface of the substrate gripped by the gripping rotation means, a first facing surface that is spaced from the one main surface, and a portion of the first facing surface that faces the central portion of the substrate. A first opposing member having
Nozzle moving means for moving the first nozzle relative to the gripping rotation means and the first opposing member;
The supply hole is formed at a position where the processing liquid can be supplied from each first nozzle arranged at a predetermined processing position by the nozzle moving means,
The first counter member is supplied from the first nozzle selectively disposed at the processing position to the first space between the one main surface of the substrate and the first counter surface through the supply hole. A substrate processing apparatus that makes the first space liquid-tight with a liquid. The supply hole includes a nozzle insertion hole for selectively inserting the plurality of first nozzles,
The substrate processing apparatus according to claim 1, wherein the processing position is a position of the first nozzle that is inserted into the nozzle insertion hole.   The substrate processing apparatus according to claim 1, wherein the first facing member is a disk member having a diameter larger than that of the substrate held by the holding rotation unit.   The substrate processing apparatus according to claim 1, wherein the gripping rotation unit grips the first facing member so as to be integrally rotatable with the substrate.   The gripping rotation means includes a base that can rotate around a predetermined rotation axis, and a plurality of clamping members that stand on the base and that hold / release the substrate and the first opposing member in cooperation with each other. Item 5. The substrate processing apparatus according to Item 4. An engaging member provided to be engaged / disengaged with the peripheral edge of the first opposing member;
The engaging member that is engaged with the first opposing member is displaced between a delivery position where the first opposing member can be delivered to the gripping rotation means and a separation position where the first opposing member is separated from the gripping rotation means. The substrate processing apparatus according to claim 5, further comprising engagement member moving means.   The engaging member can be changed in posture between an engaging posture that can be engaged with a peripheral edge of the first opposing member and a retracting posture that is retracted from the engaging posture and not engaged with the first opposing member. The substrate processing apparatus according to claim 6, further comprising an engaging claw. A support member for supporting a peripheral edge of the first opposing member;
A support member that moves the support member so that the first facing member is displaced between a proximity position that is close to the substrate held by the gripping rotation means and a separation position that is separated from the gripping rotation means. The substrate processing apparatus according to claim 1, further comprising a moving unit. A second nozzle having a discharge port for discharging the treatment liquid;
A treatment liquid that has a second opposing surface that is opposed to the other main surface of the substrate held by the holding rotation means at a distance from the other main surface and that has the discharge port, and is discharged from the discharge port. The substrate processing according to claim 1, further comprising: a second facing member that makes the second space between the other main surface of the substrate and the second facing surface liquid-tight. apparatus. The second facing member is a disk member having a smaller diameter than the substrate gripped by the gripping rotation means,
The substrate processing apparatus according to claim 9, wherein the discharge port is formed in a portion of the second facing surface that faces the rotation center of the substrate.   11. The substrate processing apparatus according to claim 9, wherein the second facing surface forms a tapered surface that is closer to the substrate that is gripped by the gripping rotation means as the distance from the ejection port increases in the radial direction.   The substrate processing apparatus according to claim 1, further comprising an annular member having a peripheral portion facing surface that faces a peripheral portion of the one main surface of the substrate held by the gripping rotation means.   The infrared lamp for heating the process liquid supplied to the said 1st space is arrange | positioned with respect to the said 1st opposing member on the opposite side to the board | substrate hold | gripped by the said holding | maintenance rotation means. The substrate processing apparatus as described in any one of -12.

Images