JP2008156393A - Radiation-sensitive resin composition, protrusion of perpendicularly oriented type liquid crystal display element and method for producing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having sufficient process margin and good preservation stability and suitably used for forming protrusions of a perpendicularly oriented type liquid crystal display element, to provide the protrusions formed therefrom and to provide the liquid crystal display element having the protrusions. <P>SOLUTION: The radiation-sensitive resin composition for forming the protrusions of the perpendicularly oriented type liquid crystal display element comprises [A] a copolymer obtained by copolymerizing (a1) an unsaturated carboxylic acid and/or an unsaturated carboxylic acid anhydride with (a2) a specific oxetanyl group-containing unsaturated compound and (a3) an olefinically unsaturated compound other than the (a1) and (a2) and [B] a 1,2-quinone diazide compound. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a radiation-sensitive resin composition suitable for forming protrusions of a vertical liquid crystal display element, a protrusion of a vertical liquid crystal display element formed therefrom, and a liquid crystal display element having the same.

Liquid crystal display panels are most widely used today among flat panel displays. Especially, TFT (thin film transistor) type liquid crystal display panels (TFT-LCD) are used in office automation equipment such as personal computers and word processors, liquid crystal televisions, etc. With the widespread use, the required performance for display quality has become increasingly severe.
The most widely used method among TFT-LCDs is a TN (Twisted Nematic) type LCD, and this method arranges polarizing films whose orientation directions differ by 90 degrees outside two transparent electrodes, An alignment film is arranged inside the two transparent electrodes, and a nematic liquid crystal is arranged between the two alignment films so that the alignment direction of the liquid crystal is twisted 90 degrees from one electrode side to the other electrode side. It is a thing. When non-polarized light is incident in this state, the linearly polarized light transmitted through one polarizing plate is transmitted through the liquid crystal while the polarization direction is shifted, so that it can be transmitted through the other polarizing plate, resulting in a bright state. Next, when a voltage is applied to both the electrodes to make the liquid crystal molecules stand upright, the linearly polarized light reaching the liquid crystal is transmitted as it is, so that it cannot be transmitted through the other polarizing plate, resulting in a dark state. Thereafter, when the voltage is not applied again, the light state is restored.
Such a TN-type LCD has the same or better CRT as the contrast and color reproducibility in the front due to recent technological improvements. However, the TN type LCD has a big problem that the viewing angle is narrow.

In order to solve such problems, STN (Super Twisted Nematic) type LCDs and MVA (Multi-domain Vertically Aligned) type LCDs (vertical alignment type liquid crystal display panels) have been developed. Among these, the STN type LCD is a nematic type liquid crystal of a TN type LCD that is blended with a chiral agent that is a photoactive substance so that the alignment axis of liquid crystal molecules is twisted by 180 degrees or more between two electrodes. It is. Further, as described in Non-Patent Document 1 and Patent Document 1, the MVA-type LCD is a combination of a negative-type liquid crystal having negative dielectric anisotropy and an alignment film in the vertical direction. Instead, it uses the birefringence mode, and even when no voltage is applied, the alignment direction of the liquid crystal located near the alignment film is maintained almost vertical, so it has excellent contrast, viewing angle, etc. It is also excellent in terms of the manufacturing process, such as not having to perform a rubbing treatment for aligning the liquid crystal.
In the MVA type LCD, in order to allow the liquid crystal to take a plurality of orientation directions in one pixel region, the display-side electrode has a slit in one pixel region as a domain regulating means, In the same pixel region on the light incident side electrode, the position of the electrode is shifted from the position of the electrode to form a protrusion having a slope (for example, a triangular pyramid shape, a semi-convex lens shape, etc.).

It is considered convenient to form such protrusions by photolithography, which has the advantage that microfabrication is possible and the shape can be easily controlled.
In addition to the appropriate cross-sectional shape of the projection material, resistance to the solvent used in the subsequent alignment film forming process, wettability to the alignment film material, resistance to heat applied in the alignment film forming process, and rubbing process Various properties such as adhesion and strength (rubbing resistance) that can withstand heat resistance are required.
However, a radiation-sensitive composition that satisfies these requirements is not yet known, and there is a strong demand for providing a radiation-sensitive composition that can be suitably used to form protrusions.
Japanese Patent Laid-Open No. 11-258605 "Liquid Crystal" Vol.3, No.2,117 (1999)

  The present invention has been made in view of the above circumstances, and its object is to provide a radiation sensitivity having a sufficient process margin and good storage stability that are suitably used for forming protrusions of a vertical alignment type liquid crystal display element. An object of the present invention is to provide a resin composition, a protrusion formed therefrom, and a liquid crystal display device including the protrusion.

According to the present invention, the above objects and advantages of the present invention are as follows.
[A] (a1) unsaturated carboxylic acid and / or unsaturated carboxylic acid anhydride (hereinafter also referred to as “compound (a1)”),
(A2) a compound represented by general formula (I) or general formula (II) (hereinafter also referred to as “compound (a2)”),

Wherein R is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R ¹ is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R ² , R ³ , R ⁴ and R ⁵ are each It is independently a hydrogen atom, a fluorine atom, an alkyl group having 1 to 4 carbon atoms, a phenyl group, or a perfluoroalkyl group having 1 to 4 carbon atoms, and n is an integer of 1 to 6. ]
And (a3) an olefinically unsaturated compound other than (a1) and (a2) (hereinafter also referred to as “compound (a3)”).
A copolymer obtained by copolymerizing (hereinafter also referred to as “copolymer [A]”),
[B] It is achieved by a radiation sensitive resin composition containing a 1,2-quinonediazide compound.

The above problem is secondly,
Copolymer [A],
[B] 1,2-quinonediazide compound, and [E] the following general formula (III)

(Wherein R ^{1 to} R ⁶ may be the same or different and each represents a hydrogen atom or a group —CH ₂ OR, and R represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms). This is achieved by a radiation-sensitive resin composition for forming protrusions of a vertical alignment type liquid crystal display element, which contains a compound.

Third, the above object is achieved by a protrusion formed from the above composition.
Fourth, the above object is achieved by a liquid crystal display device having the above protrusion.

According to the present invention, a radiation-sensitive resin composition having a sufficient process margin and good storage stability, which is suitably used for forming protrusions of a vertical alignment type liquid crystal display element, and protrusions formed therefrom, A liquid crystal display element is provided.
The protrusions obtained by the present invention are excellent in various properties such as resistance to solvents, wettability to alignment film materials, resistance to heat applied in the alignment film forming process, and adhesion and strength (rubbing resistance) that can withstand the rubbing process. .

Hereinafter, the radiation sensitive resin composition of this invention is explained in full detail.

Copolymer [A]
Copolymer [A] can be synthesized by radical polymerization of compound (a1), compound (a2), and compound (a3) in the presence of a polymerization initiator in a solvent.

The copolymer [A] used in the present invention preferably contains 5 to 40% by weight, particularly preferably 10 to 35% by weight, of structural units derived from the compound (a1). Copolymers whose constituent units are less than 5% by weight are difficult to dissolve in an alkaline aqueous solution, whereas copolymers exceeding 40% by weight tend to be too soluble in an alkaline aqueous solution.
Examples of the compound (a1) include monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid;
Dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid; and anhydrides of these dicarboxylic acids;
Mono [(meth) acryloyloxyalkyl] of divalent or higher polyvalent carboxylic acids such as succinic acid mono [2- (meth) acryloyloxyethyl] and phthalic acid mono [2- (meth) acryloyloxyethyl] Esters;
Examples thereof include mono (meth) acrylates of polymers having a carboxyl group and a hydroxyl group at both ends, such as ω-carboxypolycaprolactone mono (meth) acrylate. Of these, acrylic acid, methacrylic acid, maleic anhydride and the like are preferably used from the viewpoints of copolymerization reactivity, solubility in an aqueous alkali solution, and availability. These may be used alone or in combination.

  The copolymer [A] used in the present invention preferably contains 5 to 60% by weight, particularly preferably 10 to 50% by weight, of structural units derived from the compound (a2). When this structural unit is less than 5% by weight, the heat resistance of the resulting coating film tends to decrease, whereas when it exceeds 60% by weight, the storage stability of the copolymer tends to decrease.

  Examples of the compound (a2) represented by the general formula (I) include 3- (methacryloyloxymethyl) oxetane, 3- (methacryloyloxymethyl) -3-ethyloxetane, and 3- (methacryloyloxymethyl) -2-methyloxetane. 3- (methacryloyloxymethyl) -2-trifluoromethyloxetane, 3- (methacryloyloxymethyl) -2-pentafluoroethyloxetane, 3- (methacryloyloxymethyl) -2-phenyloxetane, 3- (methacryloyloxymethyl) ) -2,2-difluorooxetane, 3- (methacryloyloxymethyl) -2,2,4-trifluorooxetane, 3- (methacryloyloxymethyl) -2,2,4,4-tetrafluorooxetane, 3- (Methacryloyloxyethyl) oxetane 3- (methacryloyloxyethyl) -3-ethyloxetane, 2-ethyl-3- (methacryloyloxyethyl) oxetane, 3- (methacryloyloxyethyl) -2-trifluoromethyloxetane, 3- (methacryloyloxyethyl) -2 -Pentafluoroethyl oxetane, 3- (methacryloyloxyethyl) -2-phenyloxetane, 2,2-difluoro-3- (methacryloyloxyethyl) oxetane, 3- (methacryloyloxyethyl) -2,2,4-trifluoro Methacrylic acid esters such as oxetane and 3- (methacryloyloxyethyl) -2,2,4,4-tetrafluorooxetane;

3- (acryloyloxymethyl) oxetane, 3- (acryloyloxymethyl) -3-ethyloxetane, 3- (acryloyloxymethyl) -2-methyloxetane, 3- (acryloyloxymethyl) -2-trifluoromethyloxetane, 3- (acryloyloxymethyl) -2-pentafluoroethyloxetane, 3- (acryloyloxymethyl) -2-phenyloxetane, 3- (acryloyloxymethyl) -2,2-difluorooxetane, 3- (acryloyloxymethyl) ) -2,2,4-trifluorooxetane, 3- (acryloyloxymethyl) -2,2,4,4-tetrafluorooxetane, 3- (acryloyloxyethyl) oxetane, 3- (acryloyloxyethyl) -3 -Ethyloxetane, 2-ethyl-3 (Acryloyloxyethyl) oxetane, 3- (acryloyloxyethyl) -2-trifluoromethyloxetane, 3- (acryloyloxyethyl) -2-pentafluoroethyloxetane, 3- (acryloyloxyethyl) -2-phenyloxetane, 2,2-difluoro-3- (acryloyloxyethyl) oxetane, 3- (acryloyloxyethyl) -2,2,4-trifluorooxetane, 3- (acryloyloxyethyl) -2,2,4,4-tetra And acrylic acid esters such as fluorooxetane.

  Examples of the compound (a2) represented by the general formula (II) include 2- (methacryloyloxymethyl) oxetane, 2-methyl-2- (methacryloyloxymethyl) oxetane, and 3-methyl-2- (methacryloyloxymethyl) oxetane. 4-methyl-2- (methacryloyloxymethyl) oxetane, 2- (methacryloyloxymethyl) -2-trifluoromethyloxetane, 2- (methacryloyloxymethyl) -3-trifluoromethyloxetane, 2- (methacryloyloxymethyl) ) -4-trifluoromethyloxetane, 2- (methacryloyloxymethyl) -2-pentafluoroethyl oxetane, 2- (methacryloyloxymethyl) -3-pentafluoroethyloxetane, 2- (methacryloyloxymethyl) -4-pentafuro Ethyl oxetane, 2- (methacryloyloxymethyl) -2-phenyloxetane, 2- (methacryloyloxymethyl) -3-phenyloxetane, 2- (methacryloyloxymethyl) -4-phenyloxetane, 2,3-difluoro-2- (Methacryloyloxymethyl) oxetane, 2,4-difluoro-2- (methacryloyloxymethyl) oxetane, 3,3-difluoro-2- (methacryloyloxymethyl) oxetane, 3,4-difluoro-2- (methacryloyloxymethyl) Oxetane, 4,4-difluoro-2- (methacryloyloxymethyl) oxetane, 2- (methacryloyloxymethyl) -3,3,4-trifluorooxetane, 2- (methacryloyloxymethyl) -3,4,4-tri Fluoroxetane, 2- (me Tacriroyloxymethyl) -3,3,4,4-tetrafluorooxetane,

2- (methacryloyloxyethyl) oxetane, 2- (2- (2-methyloxetanyl)) ethyl methacrylate, 2- (2- (3-methyloxetanyl)) ethyl methacrylate, 2- (methacryloyloxyethyl) -2-methyl Oxetane, 2- (methacryloyloxyethyl) -4-methyloxetane, 2- (methacryloyloxyethyl) -2-trifluoromethyloxetane, 2- (methacryloyloxyethyl) -3-trifluoromethyloxetane, 2- (methacryloyloxy) Ethyl) -4-trifluoromethyloxetane, 2- (methacryloyloxyethyl) -2-pentafluoroethyloxetane, 2- (methacryloyloxyethyl) -3-pentafluoroethyloxetane, 2- (methacryloyloxyethyl) -4- N-tafluoroethyloxetane, 2- (methacryloyloxyethyl) -2-phenyloxetane, 2- (methacryloyloxyethyl) -3-phenyloxetane, 2- (methacryloyloxyethyl) -4-phenyloxetane, 2,3-difluoro- 2- (methacryloyloxyethyl) oxetane, 2,4-difluoro-2- (methacryloyloxyethyl) oxetane, 3,3-difluoro-2- (methacryloyloxyethyl) oxetane, 3,4-difluoro-2- (methacryloyloxy) Ethyl) oxetane, 4,4-difluoro-2- (methacryloyloxyethyl) oxetane, 2- (methacryloyloxyethyl) -3,3,4-trifluorooxetane, 2- (methacryloyloxyethyl) -3,4,4 -Trifluorooxeta , 2- (methacryloyloxyethyl) 3,3,4,4 methacrylic acid esters of tetrafluoroethane oxetane, and the like;

2- (acryloyloxymethyl) oxetane, 2-methyl-2- (acryloyloxymethyl) oxetane, 3-methyl-2- (acryloyloxymethyl) oxetane, 4-methyl-2- (acryloyloxymethyl) oxetane, 2- (Acryloyloxymethyl) -2-trifluoromethyloxetane, 2- (acryloyloxymethyl) -3-trifluoromethyloxetane, 2- (acryloyloxymethyl) -4-trifluoromethyloxetane, 2- (acryloyloxymethyl) 2-Pentafluoroethyl oxetane, 2- (acryloyloxymethyl) -3-pentafluoroethyl oxetane, 2- (acryloyloxymethyl) -4-pentafluoroethyl oxetane, 2- (acryloyloxymethyl) -2-phenyloxet 2- (acryloyloxymethyl) -3-phenyloxetane, 2- (acryloyloxymethyl) -4-phenyloxetane, 2,3-difluoro-2- (acryloyloxymethyl) oxetane, 2,4-difluoro-2 -(Acryloyloxymethyl) oxetane, 3,3-difluoro-2- (acryloyloxymethyl) oxetane, 3,4-difluoro-2- (acryloyloxymethyl) oxetane, 4,4-difluoro-2- (acryloyloxymethyl) ) Oxetane, 2- (acryloyloxymethyl) -3,3,4-trifluorooxetane, 2- (acryloyloxymethyl) -3,4,4-trifluorooxetane, 2- (acryloyloxymethyl) -3,3 , 4,4-tetrafluorooxetane,

2- (acryloyloxyethyl) oxetane, 2- (2- (2-methyloxetanyl)) ethyl methacrylate, 2- (2- (3-methyloxetanyl)) ethyl methacrylate, 2- (acryloyloxyethyl) -2-methyl Oxetane, 2- (acryloyloxyethyl) -4-methyloxetane, 2- (acryloyloxyethyl) -2-trifluoromethyloxetane, 2- (acryloyloxyethyl) -3-trifluoromethyloxetane, 2- (acryloyloxy) Ethyl) -4-trifluoromethyloxetane, 2- (acryloyloxyethyl) -2-pentafluoroethyloxetane, 2- (acryloyloxyethyl) -3-pentafluoroethyloxetane, 2- (acryloyloxyethyl) -4- Pentafluoroethyl Xetane, 2- (acryloyloxyethyl) -2-phenyloxetane, 2- (acryloyloxyethyl) -3-phenyloxetane, 2- (acryloyloxyethyl) -4-phenyloxetane, 2,3-difluoro-2- ( Acryloyloxyethyl) oxetane, 2,4-difluoro-2- (acryloyloxyethyl) oxetane, 3,3-difluoro-2- (acryloyloxyethyl) oxetane, 3,4-difluoro-2- (acryloyloxyethyl) oxetane 4,4-Difluoro-2- (acryloyloxyethyl) oxetane, 2- (acryloyloxyethyl) -3,3,4-trifluorooxetane, 2- (acryloyloxyethyl) -3,4,4-trifluoro Oxetane, 2- (acryloyloxyethyl)- , 3,4,4 acrylic acid esters such as tetrafluoroethane oxetane and the like.

  Among these, 3- (methacryloyloxymethyl) oxetane, 3- (methacryloyloxymethyl) -2-trifluoromethyloxetane, 3- (methacryloyloxymethyl) -2-phenyloxetane, 2- (methacryloyloxymethyl) oxetane, The photosensitive resin composition from which 2- (methacryloyloxymethyl) -4-trifluoromethyloxetane is obtained has a wide process margin and is preferably used from the viewpoint of improving the chemical resistance of the resulting interlayer insulating film and microlens. . These may be used alone or in combination.

  The copolymer [A] used in the present invention preferably contains 10 to 80% by weight, particularly preferably 20 to 70% by weight, of structural units derived from the compound (a3). When this structural unit is less than 10% by weight, the storage stability of the copolymer [A] tends to be lowered, whereas when it exceeds 80% by weight, the copolymer [A] is hardly dissolved in an alkaline aqueous solution. Become.

Examples of the compound (a3) include methacrylic acid alkyl esters such as methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, and t-butyl methacrylate; acrylic acid alkyl esters such as methyl acrylate and isopropyl acrylate; cyclohexyl Methacrylate, 2-methylcyclohexyl methacrylate, tricyclo [5.2.1.0 ^2,6 ] decan-8-yl methacrylate (referred to in the art as dicyclopentanyl methacrylate), dicyclopentanyl Methacrylic acid cyclic alkyl esters such as oxyethyl methacrylate and isobornyl methacrylate; cyclohexyl acrylate, 2-methylcyclohexyl acrylate, tri Black [5.2.1.0 ^2,6] decan-8-yl acrylate (in the art are said to dicyclopentanyl acrylate as trivial name), dicyclopentanyl oxyethyl acrylate, isobornyl acrylate Acrylic acid cyclic alkyl esters such as phenyl methacrylate and benzyl methacrylate; aryl acrylates such as phenyl acrylate and benzyl acrylate; dicarboxylic acids such as diethyl maleate, diethyl fumarate and diethyl itaconate Diesters; hydroxyalkyl esters such as 2-hydroxyethyl methacrylate and 2-hydroxypropyl methacrylate;

Bicyclo [2.2.1] hept-2-ene,
5-methylbicyclo [2.2.1] hept-2-ene,
5-ethylbicyclo [2.2.1] hept-2-ene,
5-hydroxybicyclo [2.2.1] hept-2-ene,
5-carboxybicyclo [2.2.1] hept-2-ene,
5-hydroxymethylbicyclo [2.2.1] hept-2-ene,
5- (2′-hydroxyethyl) bicyclo [2.2.1] hept-2-ene,
5-methoxybicyclo [2.2.1] hept-2-ene,
5-ethoxybicyclo [2.2.1] hept-2-ene,
5,6-dihydroxybicyclo [2.2.1] hept-2-ene,
5,6-dicarboxybicyclo [2.2.1] hept-2-ene,
5,6-di (hydroxymethyl) bicyclo [2.2.1] hept-2-ene,
5,6-di (2′-hydroxyethyl) bicyclo [2.2.1] hept-2-ene,
5,6-dimethoxybicyclo [2.2.1] hept-2-ene,
5,6-diethoxybicyclo [2.2.1] hept-2-ene,
5-hydroxy-5-methylbicyclo [2.2.1] hept-2-ene,
5-hydroxy-5-ethylbicyclo [2.2.1] hept-2-ene,
5-carboxy-5-methylbicyclo [2.2.1] hept-2-ene,
5-carboxy-5-ethylbicyclo [2.2.1] hept-2-ene,
5-hydroxymethyl-5-methylbicyclo [2.2.1] hept-2-ene,
5-carboxy-6-methylbicyclo [2.2.1] hept-2-ene,
5-carboxy-6-ethylbicyclo [2.2.1] hept-2-ene,
5,6-dicarboxybicyclo [2.2.1] hept-2-ene anhydride (Hymic acid anhydride),
5-t-butoxycarbonylbicyclo [2.2.1] hept-2-ene,
5-cyclohexyloxycarbonylbicyclo [2.2.1] hept-2-ene,
5-phenoxycarbonylbicyclo [2.2.1] hept-2-ene,
5,6-di (t-butoxycarbonyl) bicyclo [2.2.1] hept-2-ene,
Bicyclounsaturated compounds such as 5,6-di (cyclohexyloxycarbonyl) bicyclo [2.2.1] hept-2-ene;

Phenylmaleimide, cyclohexylmaleimide, benzylmaleimide, N-succinimidyl-3-maleimidobenzoate, N-succinimidyl-4-maleimidobutyrate, N-succinimidyl-6-maleimidocaproate, N-succinimidyl-3-maleimidopropionate, Dicarbonylimide derivatives such as N- (9-acridinyl) maleimide;

Styrene, α-methyl styrene, m-methyl styrene, p-methyl styrene, vinyl toluene, p-methoxy styrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, 1,3-butadiene , Isoprene, 2,3-dimethyl-1,3-butadiene, glycidyl acrylate, glycidyl methacrylate, glycidyl α-ethyl acrylate, glycidyl α-n-propyl acrylate, glycidyl α-n-butyl acrylate, acrylic acid -3,4-epoxybutyl, methacrylic acid-3,4-epoxybutyl, acrylic acid-6,7-epoxyheptyl, methacrylic acid-6,7-epoxyheptyl, α-ethylacrylic acid-6,7-epoxyheptyl O-Vinylbenzylglycidylate , M- vinylbenzyl glycidyl ether, p- vinylbenzyl glycidyl ether.

  Among these, styrene, t-butyl methacrylate, dicyclopentanyl methacrylate, p-methoxystyrene, 2-methylcyclohexyl acrylate, 1,3-butadiene, glycidyl methacrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl Ether, p-vinylbenzylglycidyl ether, phenylmaleimide, cyclohexylmaleimide, bicyclo [2.2.1] hept-2-ene and the like are preferable from the viewpoint of copolymerization reactivity and solubility in an aqueous alkali solution. These may be used alone or in combination.

As described above, the copolymer [A] used in the present invention has a carboxyl group and / or a carboxylic acid anhydride group and an epoxy group, and has appropriate solubility in an alkaline aqueous solution, It can be easily cured by heating without using a special curing agent.
The radiation-sensitive resin composition containing the copolymer [A] can easily form a coating film having a predetermined pattern without causing a development residue during film development and without causing film slippage.

  Examples of the solvent used for the production of the copolymer [A] include alcohol, ether, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, propylene glycol alkyl ether propio Nates, aromatic hydrocarbons, ketones, esters and the like.

Specific examples thereof include alcohols such as methanol, ethanol, benzyl alcohol, 2-phenylethyl alcohol, and 3-phenyl-1-propanol;
Ethers such as tetrahydrofuran;
Examples of glycol ethers include ethylene glycol monomethyl ether and ethylene glycol monoethyl ether;
Examples of ethylene glycol alkyl ether acetate include methyl cellosolve acetate, ethyl cellosolve acetate, ethylene glycol monobutyl ether acetate, and ethylene glycol monoethyl ether acetate;
Examples of diethylene glycol include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and diethylene glycol ethyl methyl ether.
Examples of propylene glycol monoalkyl ethers include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether;

As propylene glycol alkyl ether propionate, for example, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol butyl ether acetate and the like;
As propylene glycol alkyl ether acetate, for example, propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate, propylene glycol butyl ether propionate, etc .;
Aromatic hydrocarbons such as toluene, xylene, etc .;
Examples of ketones include methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, and the like;

Examples of esters include methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, hydroxy Ethyl acetate, hydroxybutyl acetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, 2-hydroxy -3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxy acetate, ethyl ethoxy acetate, propyl ethoxy acetate, butyl ethoxy acetate, propoxy Methyl acetate, ethyl propoxyacetate, propyl propoxyacetate, butyl propoxyacetate, methyl butoxyacetate, ethyl butoxyacetate, propyl butoxyacetate, butylbutoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionic acid Propyl, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate Propyl 2-butoxypropionate, butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, 3-methoxypropyl Butyl pionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3-propoxypropionate Examples thereof include esters such as propyl acid, butyl 3-propoxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, and butyl 3-butoxypropionate.

    Of these, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, and propylene glycol alkyl ether acetate are preferable, and diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol methyl ether, and propylene glycol methyl ether acetate are particularly preferable. .

  As the polymerization initiator used for the production of the copolymer [A], those generally known as radical polymerization initiators can be used. For example, 2,2′-azobisisobutyronitrile, 2,2 Azo compounds such as' -azobis- (2,4-dimethylvaleronitrile), 2,2'-azobis- (4-methoxy-2,4-dimethylvaleronitrile); benzoyl peroxide, lauroyl peroxide, t-butylperoxypi And organic peroxides such as barate, 1,1'-bis- (t-butylperoxy) cyclohexane; and hydrogen peroxide. When a peroxide is used as the radical polymerization initiator, it may be a redox initiator using the peroxide together with a reducing agent.

  In the production of the copolymer [A], a molecular weight modifier can be used to adjust the molecular weight. Specific examples thereof include halogenated hydrocarbons such as chloroform and carbon tetrabromide; mercaptans such as n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, tert-dodecyl mercaptan and thioglycolic acid; dimethylxanthogen Xanthogens such as sulfide and diisopropylxanthogen disulfide; terpinolene, α-methylstyrene dimer and the like.

  The copolymer [A] used in the present invention has a polystyrene-equivalent weight average molecular weight (hereinafter referred to as “Mw”) usually 2 × 10 3 to 5 × 10 5, preferably 5 × 10 3 to 1 × 10 5. Is desirable. If the Mw is less than 2 × 10 3, the remaining film ratio after development tends to be low, whereas if it exceeds 5 × 10 5, the undeveloped residue may occur.

1,2-quinonediazide compound [B]
As the 1,2-quinonediazide compound [B] used in the present invention, as the 1,2-quinonediazide compound, 1,2-benzoquinonediazidesulfonic acid ester, 1,2-naphthoquinonediazidesulfonic acid ester, 1,2- Examples thereof include benzoquinone diazide sulfonic acid amide and 1,2-naphthoquinone diazide sulfonic acid amide.

  Specific examples thereof include 2,3,4-trihydroxybenzophenone-1,2-naphthoquinone azide-4-sulfonic acid ester, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfone. Acid ester, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-7-sulfonic acid ester, 2 , 3,4-Trihydroxybenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,4,6 -Trihydroxybenzophenone-1,2-naphthoquinone diazi -5-sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinonediazide-7-sulfone 1,2-naphthoquinone diazide sulfonic acid esters of trihydroxybenzophenone such as acid esters, 2,4,6-trihydroxybenzophenone-1,2-naphthoquinone diazide-8-sulfonic acid ester;

2,2 ′, 4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2 ′, 4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5 Sulfonic acid ester, 2,2 ′, 4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,2 ′, 4,4′-tetrahydroxybenzophenone-1,2-naphtho Quinonediazide-7-sulfonic acid ester, 2,2 ′, 4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid ester, 2,3,4,3′-tetrahydroxybenzophenone-1, 2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,3′-tetrahydroxyl Benzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,3,4,3′- Tetrahydroxybenzophenone-1,2-naphthoquinonediazide-7-sulfonic acid ester, 2,3,4,3′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid ester, 2,3,4,4 '-Tetrahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4 , 4'-Tetrahydroxybenzophenone-1,2-naphthoquinonedia Do-6-sulfonic acid ester, 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-7-sulfonic acid ester, 2,3,4,4′-tetrahydroxybenzophenone-1,2 -Naphthoquinonediazide-8-sulfonic acid ester, 2,3,4,2'-tetrahydroxy-4'-methylbenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,2'- Tetrahydroxy-4'-methylbenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,3,4,2'-tetrahydroxy-4'-methylbenzophenone-1,2-naphthoquinonediazide-6-sulfone Acid ester, 2,3,4,2′-tetrahydroxy-4′-methylbenzophenone-1,2-naphth Toquinonediazide-7-sulfonic acid ester, 2,3,4,2′-tetrahydroxy-4′-methylbenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid ester, 2,3,4,4′-tetra Hydroxy-3'-methoxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid Ester, 2,3,4,4′-tetrahydroxy-3′-methoxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,3,4,4′-tetrahydroxy-3′-methoxybenzophenone -1,2-naphthoquinonediazide-7-sulfonic acid ester, 2,3,4,4′-tetrahi 1,2-naphthoquinonediazide sulfonic acid esters of tetrahydroxybenzophenone such as proxy-3'-methoxybenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid esters;

2,3,4,2 ′, 6′-pentahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,3,4,2 ′, 6′-pentahydroxybenzophenone-1,2-naphtho Quinonediazide-5-sulfonic acid ester, 2,3,4,2 ′, 6′-pentahydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,3,4,2 ′, 6′-penta Of pentahydroxybenzophenone such as hydroxybenzophenone-1,2-naphthoquinonediazide-7-sulfonic acid ester, 2,3,4,2 ′, 6′-pentahydroxybenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid ester, etc. 1,2-naphthoquinonediazide sulfonic acid esters;

2,4,6,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,4,6,3 ′, 4 ′, 5′-hexahydroxybenzophenone -1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,4,6,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,4, 6,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-7-sulfonic acid ester, 2,4,6,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2 -Naphthoquinonediazide-8-sulfonic acid ester, 3,4,5,3 ', 4', 5'-hexahydroxybenzophenone-1,2-naphthoquinonedia Do-4-sulfonic acid ester, 3,4,5,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 3,4,5,3 ′, 4 ', 5'-Hexahydroxybenzophenone-1,2-naphthoquinonediazide-6-sulfonic acid ester, 3,4,5,3', 4 ', 5'-hexahydroxybenzophenone-1,2-naphthoquinonediazide-7- 1,2-naphthoquinone diazide sulfonic acid ester of hexahydroxybenzophenone such as sulfonic acid ester, 3,4,5,3 ′, 4 ′, 5′-hexahydroxybenzophenone-1,2-naphthoquinonediazide-8-sulfonic acid ester Kind;

Bis (2,4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis ( 2,4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-6-sulfonic acid ester, bis (2,4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-7-sulfonic acid ester, bis (2, 4-dihydroxyphenyl) methane-1,2-naphthoquinonediazide-8-sulfonic acid ester, bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (p-hydroxyphenyl) methane -1,2-naphthoquinonediazide-5-sulfonic acid Tellurium, bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-6-sulfonic acid ester, bis (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-7-sulfonic acid ester, bis (p- Hydroxyphenyl) methane-1,2-naphthoquinonediazide-8-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1 , 2-Naphthoquinonediazide-5-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide-6-sulfonic acid ester, tri (p-hydroxyphenyl) methane-1,2-naphthoquinonediazide- 7-sulfonic acid ester, tri (p-hydride Kishifeniru) methane-1,2-naphthoquinonediazide-8-sulfonic acid ester,

1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide- 5-sulfonic acid ester, 1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide-6-sulfonic acid ester, 1,1,1-tri (p-hydroxyphenyl) ethane-1 , 2-Naphthoquinonediazide-7-sulfonic acid ester, 1,1,1-tri (p-hydroxyphenyl) ethane-1,2-naphthoquinonediazide-8-sulfonic acid ester, bis (2,3,4-trihydroxy) Phenyl) methane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,3,4-trihydroxyphenyl) Tan-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-6-sulfonic acid ester, bis (2,3,4- Trihydroxyphenyl) methane-1,2-naphthoquinonediazide-7-sulfonic acid ester, bis (2,3,4-trihydroxyphenyl) methane-1,2-naphthoquinonediazide-8-sulfonic acid ester, 2,2- Bis (2,3,4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) propane-1,2-naphtho Quinonediazide-5-sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) propane-1, -Naphthoquinonediazide-6-sulfonic acid ester, 2,2-bis (2,3,4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-7-sulfonic acid ester, 2,2-bis (2,3 , 4-trihydroxyphenyl) propane-1,2-naphthoquinonediazide-8-sulfonic acid ester,

1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,1,3-tris (2,5- Dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane -1,2-naphthoquinonediazide-6-sulfonic acid ester, 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinonediazide-7-sulfonic acid Ester, 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane-1,2-naphthoquinone Azido-8-sulfonic acid ester, 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide-4-sulfone Acid ester, 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide-5-sulfonic acid ester, 4, 4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide-6-sulfonic acid ester, 4,4 ′-[1 -[4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinone di- Dido-7-sulfonic acid ester, 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide-8-sulfone Acid esters,

Bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-4-sulfonic acid ester, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxy Phenylmethane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-6-sulfonic acid ester, bis (2,5-Dimethyl-4-hydroxyphenyl) -2-hydroxyphenylmethane-1,2-naphthoquinonediazide-7-sulfonic acid ester, bis (2,5-dimethyl-4-hydroxyphenyl) -2-hydroxyphenyl Methane-1,2-naphthoquinonediazide-8-sulfonic acid ester 3,3,3 ′, 3′-tetramethyl-1,1′-spirobiindene-5,6,7,5 ′, 6 ′, 7′-hexanol-1,2-naphthoquinonediazide-4-sulfone Acid ester 3,3,3 ′, 3′-tetramethyl-1,1′-spirobiindene-5,6,7,5 ′, 6 ′, 7′-hexanol-1,2-naphthoquinonediazide-5 -Sulfonate ester, 3,3,3 ', 3'-tetramethyl-1,1'-spirobiindene-5,6,7,5', 6 ', 7'-hexanol-1,2-naphthoquinonediazide -6-sulfonic acid ester, 3,3,3 ', 3'-tetramethyl-1,1'-spirobiindene-5,6,7,5', 6 ', 7'-hexanol-1,2- Naphthoquinonediazide-7-sulfonic acid ester, 3,3,3 ′, 3′-tetramethyl-1,1′-spirobiinde -5,6,7,5 ', 6', 7'-hexanol-1,2-naphthoquinonediazide-8-sulfonic acid ester, 2,2,4-trimethyl-7,2 ', 4'-trihydroxyflavan -1,2-naphthoquinonediazide-4-sulfonic acid ester, 2,2,4-trimethyl-7,2 ′, 4′-trihydroxyflavan-1,2-naphthoquinonediazide-5-sulfonic acid, 2,2, 4-trimethyl-7,2 ′, 4′-trihydroxyflavan-1,2-naphthoquinonediazide-6-sulfonic acid ester, 2,2,4-trimethyl-7,2 ′, 4′-trihydroxyflavan-1 2,2-naphthoquinonediazide-7-sulfonic acid, 2,2,4-trimethyl-7,2 ′, 4′-trihydroxyflavan-1,2-naphthoquinonediazide-8-sulfonic acid, etc. Phenyl) include 1,2-naphthoquinonediazide sulfonic acid esters of alkanoic.
These 1,2-quinonediazide compounds can be used alone or in combination of two or more.

[B] The usage-amount of a component is 5-100 weight part with respect to 100 weight part of copolymers [A], Preferably it is 10-50 weight part.
When this ratio is less than 5 parts by weight, the amount of acid generated by irradiation with radiation is small, so the difference in solubility in an alkaline aqueous solution that is a developer between the irradiated part and the unirradiated part is small, and patterning is difficult. Tend to be. In addition, since the amount of acid involved in the reaction with the copolymer [A] decreases, sufficient heat resistance and solvent resistance may not be obtained. On the other hand, if this ratio exceeds 100 parts by weight, a large amount of unreacted [B] component remains after irradiation for a short time, so that the effect of insolubilization in the alkaline aqueous solution is too high and development is performed. Tend to be difficult.

-Thermal acid generator [C]-
Examples of the thermal acid generator used in the present invention include sulfonium salts (excluding the triarylsulfonium salts), benzothiazonium salts, ammonium salts, and phosphonium salts (excluding the diarylphosphonium salts). ), Sulfonimide compounds, and the like. Of these, sulfonium salts, benzothiazonium salts, and sulfonimide compounds are particularly preferable.

Among the thermal acid generators, as sulfonium salts, for example,
4-acetophenyldimethylsulfonium hexafluoroantimonate, 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, dimethyl-4- (benzyloxycarbonyloxy) phenylsulfonium hexafluoroantimonate, dimethyl-4- (benzoyloxy) phenylsulfonium hexamonate Alkylsulfonium salts such as fluoroantimonate, dimethyl-4- (benzoyloxy) phenylsulfonium hexafluoroarsenate, dimethyl-3-chloro-4-acetoxyphenylsulfonium hexafluoroantimonate;
Benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-4-hydroxyphenylmethylsulfonium hexafluorophosphate, 4-acetoxyphenylbenzylmethylsulfonium hexafluoroantimonate, benzyl-4-methoxyphenylmethylsulfonium hexafluoroantimonate, Benzyl-2-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethylsulfonium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenylmethylsulfonium hexafluorophosphate, etc. Benzylsulfonium salts;

Dibenzyl-4-hydroxyphenylsulfonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylsulfonium hexafluorophosphate, dibenzyl-4-acetoxyphenylsulfonium hexafluoroantimonate, dibenzyl-4-methoxyphenylsulfonium hexafluoroantimonate, dibenzyl-3 -Chloro-4-hydroxyphenylsulfonium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-t-butylphenylsulfonium hexafluoroantimonate, benzyl-4-methoxybenzyl-4-hydroxyphenylsulfonium hexafluorophosphate Dibenzylsulfonium salts such as;
4-chlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 4-nitrobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 4-chlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluorophosphate, 4-nitro Benzyl-3-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 3,5-dichlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 2-chlorobenzyl-3-chloro-4-hydroxyphenylmethylsulfonium Examples thereof include substituted benzylsulfonium salts such as hexafluoroantimonate.

  Among these sulfonium salts, 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 4-acetoxyphenylbenzylmethylsulfonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylsulfonium Hexafluoroantimonate, dibenzyl-4-acetoxyphenylsulfonium hexafluoroantimonate, and the like are preferable.

  Examples of the benzothiazonium salts include 3-benzylbenzothiazonium hexafluoroantimonate, 3-benzylbenzothiazonium hexafluorophosphate, 3-benzylbenzothiazonium tetrafluoroborate, 3- ( Benzylbenzothia such as 4-methoxybenzyl) benzothiazonium hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazonium hexafluoroantimonate, 3-benzyl-5-chlorobenzothiazonium hexafluoroantimonate Zonium salts and the like can be mentioned. Of these benzothiazonium salts, 3-benzylbenzothiazonium hexafluoroantimonate is particularly preferable.

Among the commercially available products of thermal acid generators, examples of the alkylsulfonium salts include Adeka Opton CP-66, Adeka Opton CP-77 (manufactured by Asahi Denka Kogyo Co., Ltd.), and the like.
Examples of the benzylsulfonium salts include SI-60, SI-80, SI-100, SI-110, SI-145, SI-150, SI-80L, SI-100L, SI-110L (above, Sanshin). Chemical Industry Co., Ltd.).
Among these commercially available products, SI-80, SI-100, SI-110 and the like are preferable because the obtained protective film has high surface hardness.
The said heat-sensitive acid generator can be used individually or in mixture of 2 or more types.

Among the thermal acid generators, as sulfonium salts, for example,
N- (trifluoromethanesulfonyloxy) succinimide, N- (trifluoromethanesulfonyloxy) phthalimide, N- (trifluoromethanesulfonyloxy) diphenylmaleimide, N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5 -Ene-2,3-dicarboximide, N- (trifluoromethanesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (trifluoromethane Sulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (trifluoromethanesulfonyloxy) naphthylimide, N- (10-camphorsulfonyloxy) succinimide, N -(10-Camphors Phonyloxy) phthalimide, N- (10-camphorsulfonyloxy) diphenylmaleimide, N- (10-camphorsulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- ( 10-camphorsulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (10-camphorsulfonyloxy) bicyclo [2.2.1] heptane -5,6-oxy-2,3-dicarboximide, N- (10-camphorsulfonyloxy) naphthylimide, N- (p-toluenesulfonyloxy) succinimide, N- (p-toluenesulfonyloxy) phthalimide, N -(P-toluenesulfonyloxy) diphenylmaleimide, N- (p-tolu Sulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (p-toluenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5. -Ene-2,3-dicarboximide, N- (p-toluenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (p-toluene) Sulfonyloxy) naphthylimide, N- (2-trifluoromethylbenzenesulfonyloxy) succinimide, N- (2-trifluoromethylbenzenesulfonyloxy) phthalimide, N- (2-trifluoromethylbenzenesulfonyloxy) diphenylmaleimide, N -(2-trifluoromethylbenzenesulfonyloxy) bicyclo [2.2.1] hept- 5-ene-2,3-dicarboximide, N- (2-trifluoromethylbenzenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (2-trifluoromethylbenzenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (2-trifluoromethylbenzenesulfonyloxy) naphthylimide N- (4-trifluoromethylbenzenesulfonyloxy) succinimide, N- (4-trifluoromethylbenzenesulfonyloxy) phthalimide, N- (4-trifluoromethylbenzenesulfonyloxy) diphenylmaleimide, N- (4-tri Fluoromethylbenzenesulfonyloxy) bicyclo [2.2.1] hept -5-ene-2,3-dicarboximide, N- (4-trifluoromethylbenzenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide N- (4-trifluoromethylbenzenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (4-trifluoromethylbenzenesulfonyloxy) naphthyl Imido, N- (nonafluoro-n-butanesulfonyloxy) succinimide, N- (nonafluoro-n-butanesulfonyloxy) phthalimide, N- (nonafluoro-n-butanesulfonyloxy) diphenylmaleimide, N- (nonafluoro-n-butane Sulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3 Dicarboximide, N- (nonafluoro-n-butanesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyl) Oxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy) naphthylimide, N- (pentafluorobenzenesulfonyloxy) succinimide N- (pentafluorobenzenesulfonyloxy) phthalimide, N- (pentafluorobenzenesulfonyloxy) diphenylmaleimide, N- (pentafluorobenzenesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3 -Dicarboximide, N- (pentafluorobenze Sulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (pentafluorobenzenesulfonyloxy) bicyclo [2.2.1] heptane-5 , 6-oxy-2,3-dicarboximide, N- (pentafluorobenzenesulfonyloxy) naphthylimide, N- (perfluoro-n-octanesulfonyloxy) succinimide, N- (perfluoro-n-octanesulfonyloxy) ) Phthalimide, N- (perfluoro-n-octanesulfonyloxy) diphenylmaleimide, N- (perfluoro-n-octanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboxy Imido, N- (perfluoro-n-octanesulfonyloxy) -7-oxa Cyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (perfluoro-n-octanesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy- 2,3-dicarboximide, N- (perfluoro-n-octanesulfonyloxy) naphthylimide, N-{(5-methyl-5-carboxymethanebicyclo [2.2.1] hept-2-yl) sulfonyl One or two or more of oxy} succinimide and the like can be mixed and used.

[C] The usage-amount of a component is 0.01-20 weight part with respect to 100 weight part of copolymers [A], Preferably it is 0.1-5 weight part.
When this proportion exceeds 20 parts by weight, precipitates are generated and patterning tends to be difficult. On the other hand, when this proportion is less than 0.01 part by weight, the curing rate during thermosetting tends to be slow and the resolution tends to decrease.

(D) Compound containing two or more epoxy groups in the molecule Examples of the compound containing two or more epoxy groups in the molecule that can be used in the present invention include bisphenol A type epoxy resins, bisphenol F type epoxy resins, and phenol novolacs. Epoxide resins, cresol novolac epoxy resins, cycloaliphatic polyglycidyl ethers, aliphatic polyglycidyl ethers, and compounds such as glycidyl ethers of bisphenol A and bisphenol F.
Of these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, and aliphatic polyglycidyl ethers are suitable from the viewpoint of developability and control of the cross-sectional shape of the resulting protrusion. Used.

As a commercial product of a compound containing two or more of such epoxy groups in the molecule, Epicoat 1001, 1002, 1003, 1004, 1007, 1009, 1010, 828 (above, oily shell epoxy as a bisphenol A type epoxy resin) Etc.);
Epicoat 807 (manufactured by Yuka Shell Epoxy Co., Ltd.) as a bisphenol F type epoxy resin;
Epicoats 152 and 154 (manufactured by Yuka Shell Epoxy Co., Ltd.), EPPN 201 and 202 (manufactured by Nippon Kayaku Co., Ltd.), etc. as phenol novolac type epoxy resins;
As cresol novolac type epoxy resin, EOCN-102, 103S, 104S, 1020, 1025, 1027 (above, manufactured by Nippon Kayaku Co., Ltd.), Epicoat 180S75 (manufactured by Yuka Shell Epoxy Co., Ltd.) and the like;
Cyclic aliphatic epoxy resins such as CY-175, 177, 179 (above, manufactured by CIBA-GEIGY AG), ERL-4234, 4299, 4221, 4206 (above, made by U.C.C.), Show Dyne 509 (manufactured by Showa Denko KK), Aldarite CY-182, 192, 184 (manufactured by CIBA-GEIGY AG), Epicron 200, 400 (manufactured by Dainippon Ink, Inc.), Epicort 871, 872 (above, made by Yuka Shell Epoxy Co., Ltd.), ED-5661, 5862 (above, made by Celanese Coating), etc .;
Examples of the aliphatic polyglycidyl ether include Epolite 100MF (manufactured by Kyoeisha Chemical Co., Ltd.) and Epiol TMP (manufactured by Nippon Oil & Fats Co., Ltd.).

The addition amount of the compound containing two or more of these epoxy groups in the molecule is preferably 1 to 50 parts by weight, more preferably 5 to 30 parts by weight with respect to 100 parts by weight of the copolymer [A]. Protrusions formed from a composition containing a compound containing two or more epoxy groups in the molecule in such a range are excellent in heat resistance and rubbing resistance. Here, when the amount of the compound containing two or more epoxy groups in the molecule is less than 1 part by weight, the reaction with the carboxylic acid produced by irradiating the (B) 1,2-quinonediazide compound with radiation. Protrusions that are difficult to proceed sufficiently and are formed from such a composition may be inferior in heat resistance and solvent resistance. On the other hand, when the amount exceeds 50 parts by weight, the softening point of the projection material formed is lowered, and there may be a problem that it is difficult to maintain the shape during the heat treatment in the projection formation step.
In the above-mentioned copolymer [A], when an epoxy group-containing unsaturated monomer is used as a copolymerization monomer, it can be referred to as a “compound containing two or more epoxy groups in the molecule”. It differs from the component (D) in that it has.

(E) component (E) component used by this invention is the following general formula (III).

(Wherein R ^{1 to} R ⁶ may be the same or different and each represents a hydrogen atom or a group —CH ₂ OR, and R represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms). A compound.
Examples of such compounds include hexamethylol melamine, hexabutyrol melamine, partially methylolated melamine and alkylated products thereof.
As commercial products of such compounds, for example, Cymel 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158 (above, Mitsui Cyanamid Co., Ltd.) Manufactured), Nicarak Mx-750, -032, -706, -708, -40, -31, -45, Nicarak Ms-11, -001, Nicarac Mw-30, -22 (manufactured by Sanwa Chemical Co., Ltd.) Etc. can be preferably used.

  The amount of component (E) used in the present invention is preferably 1 to 50 parts by weight, more preferably 5 to 40 parts by weight, based on 100 parts by weight of copolymer [A]. When the addition amount is within this range, a rough surface having a good shape can be formed, and a composition exhibiting appropriate solubility in alkali can be obtained.

The radiation-sensitive resin composition for forming the protrusions of the vertical alignment type liquid crystal display element of the present invention contains each component according to any one of the following combinations as an essential component.
(1) Copolymer [A], (B) 1,2-quinonediazide compound (2) Copolymer [A], (B) 1,2-quinonediazide compound,
And [C] thermosensitive acid generator (3) copolymer [A], (B) 1,2-quinonediazide compound,
And [D] Compound having two or more epoxy groups in the molecule (4) Copolymer [A], (B) 1,2-quinonediazide compound,
And (E) a compound represented by the above general formula (III)

Other Additives The radiation-sensitive resin composition for forming the protrusions of the vertical alignment type liquid crystal display device of the present invention exhibits sufficient performance only by containing each component according to the above combination as an essential component. However, it may contain other additives as necessary.
Examples of such additives include sensitizers, surfactants, adhesion assistants, storage stabilizers, and antifoaming agents.

  In the radiation sensitive resin composition of the present invention, a surfactant as the [F] component can be used in order to improve applicability. Examples of the commercially available products include BM-1000, BM-1100 (above, manufactured by BM CHEMIE), MegaFuck F142D, F172, F173, F183 (above, manufactured by Dainippon Ink & Chemicals, Inc.), Florard FC-135, FC-170C, FC-430, FC-431 (manufactured by Sumitomo 3M Limited), Surflon S-112, S-113, S-131, S-141, S-145, S-382, SC-101, SC-102, SC-103, SC-104, SC-104, SC-105, SC-106 (above, manufactured by Asahi Glass Co., Ltd.), Ftop EF301, 303, 352 (manufactured by Shin-Akita Kasei Co., Ltd.), SH-28PA, SH-190, SH-193, SZ-6032, SF-8428, DC-57, DC-19 (Manufactured by Dow Corning Toray Silicone Co.) and the fluorine-based and silicone-based surfactants, such as.

In addition, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether;
Polyoxyethylene aryl ethers such as polyoxyethylene octyl phenyl ether and polyoxyethylene nonyl phenyl ether;
Nonionic surfactants such as polyoxyethylene dialkyl esters such as polyoxyethylene dilaurate and polyoxyethylene distearate;
Examples include organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid copolymer polyflow No. 57, 95 (manufactured by Kyoeisha Chemical Co., Ltd.), and the like.

  These surfactants [F] are preferably used in an amount of 5 parts by weight or less, more preferably 2 parts by weight or less based on 100 parts by weight of the copolymer [A]. When the amount of the surfactant [F] is more than 5 parts by weight, there is a tendency that film filming is likely to occur during coating.

  In order to improve the adhesion to the substrate, an adhesion assistant can also be used as the [G] component. As such an adhesion assistant, a functional silane coupling agent is preferably used, and examples thereof include a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group. Are trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3 , 4-epoxycyclohexyl) ethyltrimethoxysilane and the like.

Such an adhesion assistant is preferably used in an amount of 20 parts by weight or less, more preferably 10 parts by weight or less, based on 100 parts by weight of the copolymer [A]. When the amount of the adhesion assistant exceeds 20 parts by weight, a development residue tends to occur.

Preparation of Radiation Sensitive Resin Composition for Forming Protrusions The radiation sensitive resin composition for forming the protrusions of the vertical alignment type liquid crystal display element of the present invention is preferably dissolved in a suitable solvent and in a solution state. used. As the solvent used in this case, a solvent which dissolves each component of the composition and does not react with each component and has an appropriate vapor pressure can be preferably used. Examples of such solvents include glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycol monomethyl ether and diethylene glycol monoethyl ether. Diethylene glycol alkyl ethers; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate; aromatic hydrocarbons such as toluene and xylene; methyl ethyl ketone, cyclohexanone, 2-heptanone Methyl isobutyl keto Ketones such as methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl oxyacetate, 2 -Methyl hydroxy-3-methylbutanoate, 3-methyl-3-methoxybutyl acetate, 3-methyl-3-methoxybutyl propionate, 3-methyl-3-methoxybutyl butyrate, ethyl acetate, butyl acetate, 3- Esters such as methyl methoxypropionate, ethyl 3-methoxypropionate, and butyl 3-methoxypropionate can be used. These solvents can be used alone or in combination.

  Further, if necessary, benzyl ethyl ether, dihexyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, acetic acid High-boiling solvents such as benzyl, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate, carbitol acetate and the like can also be added.

  The composition for forming a light diffusive reflective film of the present invention is prepared by dissolving each component of the composition in the solvent so that the solid content concentration is, for example, 20 to 40 wt%, using the solvent as described above. Can do. If necessary, it may be used after being filtered through a filter having a pore size of about 0.2 μm.

Next, a method for forming the protrusions of the vertical alignment type liquid crystal display element of the present invention using the radiation-sensitive resin composition for forming the protrusions of the vertical alignment type liquid crystal display element of the present invention will be described. The method for forming protrusions of the vertical alignment type liquid crystal display element of the present invention can include the following steps in the order described below.
(1) The process of forming the coating film of the radiation sensitive composition of this invention on a board | substrate,
(2) A step of irradiating at least a part of the coating film with radiation,
(3) Development step, and (4) Heating step.

(1) Step of forming a coating film of the radiation-sensitive composition of the present invention on a substrate In the step (1), the composition solution of the present invention is applied to the substrate surface, preferably by pre-baking. The solvent is removed to form a coating film of the radiation sensitive resin composition.
Examples of the types of substrates that can be used include glass substrates, silicon wafers, and substrates on which various metals are formed.
The coating method of the composition solution is not particularly limited, and for example, an appropriate method such as a spray method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, a bar coating method, an ink jet coating method, etc. is adopted In particular, spin coating and slit die coating are preferred. The pre-baking conditions vary depending on the type of each component, the use ratio, and the like. For example, it can be set at 60 to 110 ° C. for about 30 seconds to 15 minutes.
The film thickness of the coating film to be formed is preferably 1 to 3 μm as a value after pre-baking.

(2) Step of irradiating at least a part of the coating film In the step (2), the formed coating film is irradiated with radiation through a mask having a predetermined pattern. Thereafter, in the next step (3), patterning is performed by developing with a developer to remove the irradiated portion. Examples of the radiation used at this time include ultraviolet rays, far ultraviolet rays, X-rays, and charged particle beams.
Examples of the ultraviolet rays include g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. Examples of the far ultraviolet rays include KrF excimer laser. Examples of X-rays include synchrotron radiation. Examples of the charged particle beam include an electron beam.
Among these, ultraviolet rays are preferable, and radiation including g-line and / or i-line is particularly preferable.
For example, the exposure amount is preferably 50 to 1,500 J / m ² .

(3) Development process Examples of the developer used in the development process include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, diethylaminoethanol, di-acid. N-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1,8-diazabicyclo [5,4,0] -7-undecene An aqueous solution of an alkali (basic compound) such as 1,5-diazabicyclo [4,3,0] -5-nonane can be used. In addition, an aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the above aqueous alkali solution, or various organic solvents that dissolve the composition of the present invention can be used as a developing solution. Furthermore, as a developing method, an appropriate method such as a liquid piling method, a dipping method, a rocking dipping method, a shower method, or the like can be used. The development time at this time varies depending on the composition of the composition, but can be, for example, 30 to 120 seconds.
In addition, the conventionally known radiation-sensitive resin composition has been required to strictly control the development time because the formed pattern peels when the development time exceeds about 20 to 25 seconds from the optimum value. In the case of the radiation-sensitive resin composition of the invention, good pattern formation is possible even when the excess time from the optimum development time is 30 seconds or more, and there is an advantage in product yield.

(4) Heating step (3) Performed as described above (3) After the development step, the patterned thin film is preferably rinsed, for example, by washing with running water, and more preferably irradiated with radiation from a high-pressure mercury lamp or the like. (After post-exposure), the 1,2-quinonediadito compound remaining in the thin film is decomposed, and then the thin film is heated (post-baked) with a heating device such as a hot plate or an oven. Then, the thin film is cured. The exposure amount in the post-exposure step is preferably about 2,000 to 5,000 J / m ² . Moreover, the heating temperature in this hardening process is 120-250 degreeC, for example. The heating time varies depending on the type of heating device. For example, when heat treatment is performed on a hot plate, the heating time is, for example, 5 to 30 minutes. When heat treatment is performed in an oven, the heating time is, for example, 30 to 90 minutes. Can do. At this time, a step baking method or the like in which a heating process is performed twice or more can also be used.
In this way, a patterned thin film corresponding to the projections of the target vertical alignment type liquid crystal display element can be formed on the surface of the substrate.
The protrusions of the vertically aligned liquid crystal display element formed as described above are excellent in heat resistance, solvent resistance, alignment film coating property, and the like, as will be apparent from the examples described later.

Liquid Crystal Display Element The liquid crystal display element of the present invention is an MVA type liquid crystal display element having the protrusions formed as described above.

  Synthesis Examples, Examples and Comparative Examples are shown below to describe the present invention more specifically. However, the present invention is not limited to the following examples.

Synthesis example 1
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 220 parts by weight of propylene glycol monomethyl ether acetate. Subsequently, 22 parts by weight of methacrylic acid, 38 parts of dicyclopentanyl methacrylate, 40 parts by weight of 3- (methacryloyloxymethyl) -2-phenyloxetane and 1.5 parts of α-methylstyrene dimer were charged and gently stirred while substituting nitrogen. I started. The temperature of the solution was raised to 70 ° C. and heated at this temperature for 4 hours to obtain a polymer solution containing the copolymer [A-1]. The obtained polymer solution had a solid content concentration of 31.8%, a polymer weight average molecular weight of 17,900 and a molecular weight distribution (ratio of weight average molecular weight / number average molecular weight) of 1.8. In addition, a weight average molecular weight and a number average molecular weight are polystyrene conversion average molecular weights measured using GPC (Gel permeation chromatography (HLC-8020 manufactured by Tosoh Corporation)).

Synthesis example 2
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 220 parts by weight of propylene glycol monomethyl ether acetate. Subsequently, 5 parts by weight of styrene, 22 parts by weight of methacrylic acid, 45 parts by weight of 3- (methacryloyloxymethyl) -3-ethyloxetane, and 5 parts of styrene were charged, and gentle stirring was started while replacing with nitrogen. The temperature of the solution was raised to 70 ° C. and heated at this temperature for 4 hours to obtain a polymer solution containing the copolymer [A-2]. The obtained polymer solution had a solid content concentration of 31.9%, a weight average molecular weight of 20,200, and a molecular weight distribution of 1.9.

Synthesis example 3
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 150 parts by weight of propylene glycol monomethyl ether acetate. Subsequently, 20 parts by weight of styrene, 25 parts by weight of methacrylic acid, 20 parts of cyclohexylmaleimide, 35 parts by weight of 3- (methacryloyloxymethyl) -2-trifluoromethyloxetane, and 1.5 parts of α-methylstyrene dimer were charged and the nitrogen was replaced. The stirring was started gently. The temperature of the solution was raised to 70 ° C. and heated at this temperature for 4 hours to obtain a polymer solution containing the copolymer [A-3]. The resulting polymer solution had a solid content concentration of 38.7%, the polymer had a weight average molecular weight of 21,500 and a molecular weight distribution of 2.2.

Synthesis example 4
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 220 parts by weight of propylene glycol monomethyl ether acetate. Subsequently, 20 parts by weight of styrene, 30 parts by weight of methacrylic acid, 50 parts by weight of 2- (methacryloyloxymethyl) -4-trifluoromethyloxetane, and 2.0 parts of α-methylstyrene dimer were charged and gently stirred while replacing with nitrogen. It was. The temperature of the solution was raised to 70 ° C. and heated at this temperature for 5 hours to obtain a polymer solution containing the copolymer [A-4]. The obtained polymer solution had a solid content concentration of 31.0%, a weight average molecular weight of 19000, and a molecular weight distribution of 1.7.

Comparative Synthesis Example 1
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol methyl ethyl ether. Subsequently, 23 parts by weight of methacrylic acid, 47 parts of dicyclopentanyl methacrylate, 20 parts by weight of glycidyl methacrylate, and 2.0 parts of α-methylstyrene dimer were charged, and the mixture was gently stirred while replacing with nitrogen. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [A-1R]. The resulting polymer solution had a solid content concentration of 32.8%, the polymer had a weight average molecular weight of 24,000 and a molecular weight distribution of 2.3.

Comparative Synthesis Example 2
A flask equipped with a condenser and a stirrer was charged with 7 parts by weight of 2,2′-azobis (2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol methyl ethyl ether. Subsequently, 25 parts by weight of methacrylic acid, 35 parts of dicyclopentanyl methacrylate, 40 parts by weight of 2-hydroxyethyl methacrylate, and 2.0 parts of α-methylstyrene dimer were charged, and gentle stirring was started while replacing with nitrogen. The temperature of the solution was raised to 70 ° C., and this temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [A-2R]. The obtained polymer solution had a solid content concentration of 32.8%, a weight average molecular weight of 25,000 and a molecular weight distribution of 2.4.

Example 1
Preparation of radiation sensitive resin composition Polymer solution containing copolymer [A-1] obtained in Synthesis Example 1 (corresponding to 100 parts by weight (solid content) of copolymer [A-1]),
As component [B], 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1 mol) and 1,2-naphthoquinonediazide-5 Condensation product with sulfonic acid chloride (2 mol) (4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide -5-sulfonic acid ester) 30 parts by weight and γ-methacryloxypropyltrimethoxysilane 5 parts by weight, triphenylsulfonium trifluoromethanesulfonate (SI-300, manufactured by Sanshin Chemical Co., Ltd.), 1 part by weight as a surfactant Mix 0.01 parts by weight of Fuck F172 (Dainippon Ink Co., Ltd.) and propylene glycol so that the solid content is 30% by weight. Were dissolved in monomethyl ether acetate, solution of the radiation-sensitive resin composition was filtered through a Millipore filter having a pore size 0.5μm to (S-1) was prepared.

(I) Formation of protrusions Using a spinner on a glass substrate, the composition solution (S-1) was applied, and then prebaked on a hot plate at 90 ° C. for 3 minutes to form a coating film having a thickness of 1.0 μm. Formed.
The coating film obtained above was irradiated with ultraviolet rays having an intensity at 365 nm of 10 mW / cm ² for 5 seconds through a mask having a remaining pattern having a width of 5 μm. Next, after developing with a 2.38 wt% aqueous solution of tetramethylammonium hydroxide at 25 ° C. for 30 seconds, it was rinsed with pure water for 1 minute. Further, after irradiation with ultraviolet rays having an intensity at 365 nm of 10 mW / cm ² for 30 seconds, the film was heated in an oven at 220 ° C. for 60 minutes to form protrusions.

(II) Resolution evaluation In the pattern obtained in (I) above, the case where the remaining pattern was resolved was judged good, and the case where the pattern was not resolved was judged as poor. The results are shown in Table 1.

(III) Evaluation of protrusion cross-sectional shape As a result of observing the cross-sectional shape of the pattern with a scanning electron microscope, Table 1 shows which shape corresponds to A to C. As shown in A, the pattern shape is good when the pattern is formed in the shape of a semi-convex lens having a flat bottom surface, and when the pattern edge is formed as a vertical or forward taper like B or C, the pattern is It can be said that the shape is bad.

(IV) Evaluation of heat resistance The pattern formed in the above (I) was heated in an oven at 250 ° C for 30 minutes. The change rate of the film thickness at this time is shown in Table 1. When the absolute value of this value is within 5% before and after heating, it can be said that the heat resistance is good.

(V) Evaluation of solvent resistance The pattern formed in the above (I) was immersed in dimethyl sulfoxide whose temperature was controlled at 70 ° C. for 20 minutes, and then the film thickness change due to immersion was measured. The results are shown in Table 1. When the absolute value of this value is less than 5%, the solvent resistance is good.

(VI) Evaluation of orientation film coatability AL3046 (manufactured by JS R. Co., Ltd.) as a liquid crystal aligning agent was applied to the substrate obtained in the above (I) by a printing machine for applying a liquid crystal alignment film. The presence or absence of repelling of the alignment agent on the MVA protrusions was observed with an optical microscope. The results are shown in Table 1. When there is no repellency, the alignment film coatability is good.

(VII) Evaluation of rubbing resistance AL3046 (manufactured by JS R. Co., Ltd.) as a liquid crystal aligning agent was applied to the substrate obtained in the above (I) by a printing machine for applying a liquid crystal aligning film, and 1 at 180 ° C. The coating was dried for a time to form a coating film having a dry film thickness of 0.05 μm.
The coating film was rubbed with a rubbing machine having a roll around which a nylon cloth was wound at a roll rotation speed of 500 rpm and a stage moving speed of 1 cm / sec. The results are shown in Table 1. The rubbing resistance is good when the MVA protrusion and the spacer pattern are not scraped or peeled off.

(VIII) Evaluation of Storage Stability The composition solution was heated in an oven at 40 ° C. for 1 week, and the storage stability was evaluated by the change in viscosity before and after heating. The viscosity change rate at this time is shown in Table 1. When the rate of change is less than 4%, the storage stability is good, and when it is 4% or more, the storage stability is poor.

Example 2
A polymer solution containing the copolymer [A-2] obtained in Synthesis Example 1 (corresponding to 100 parts by weight (solid content) of the copolymer [A-2]);
As component [B], 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1 mol) and 1,2-naphthoquinonediazide-5 Condensation product with sulfonic acid chloride (2 mol) (4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide -5-sulfonic acid ester) 30 parts by weight and 5 parts by weight of γ-methacryloxypropyltrimethoxysilane, 20.0 parts by weight of Epicoat 828 manufactured by Yuka Shell Epoxy Co., Ltd. as component (D), and SH- Mixing 0.01 parts by weight of 28PA (manufactured by Toray Dow Corning Silicone Co., Ltd.) and propylene glycol so that the solid content concentration is 30% by weight. Were dissolved in monomethyl ether acetate, the solution of the radiation-sensitive resin composition (S-2) was prepared and filtered through a Millipore filter having a pore size 0.5 [mu] m, it was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 3
A polymer solution containing the copolymer [A-3] obtained in Synthesis Example 1 (corresponding to 100 parts by weight (solid content) of the copolymer [A-3]),
As component [B], 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1 mol) and 1,2-naphthoquinonediazide-5 Condensation product with sulfonic acid chloride (2 mol) (4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide -5-sulfonic acid ester) 30 parts by weight and γ-methacryloxypropyltrimethoxysilane 5 parts by weight, as component (E) 20.0 parts by weight of Cymel 300 manufactured by Mitsui Cyanamid Co., Ltd. Dainippon Ink Co., Ltd.) is mixed with 0.01 parts by weight of 0.01 parts by weight, and propylene glycol mono so that the solid content concentration is 30% by weight. Was dissolved in chilled ether acetate, a solution of the radiation-sensitive resin composition (S-3) was prepared and filtered through a Millipore filter having a pore size 0.5 [mu] m, it was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 4
In Example 1, the composition solution (S-4) was used in the same manner as in Example 1 except that the solution containing the copolymer [A-4] was used instead of the solution containing the copolymer [A-1]. ) Was prepared and evaluated. The results are shown in Table 1.

Example 5
In Example 3, component solution (S-5) was used in the same manner as in Example 3 except that EOCN-102 manufactured by Nippon Kayaku Co., Ltd. was used instead of Cymel 300 manufactured by Mitsui Cyanamid Co., Ltd. Were prepared and evaluated. The results are shown in Table 1.

Comparative Example 1
In Example 1, a composition solution (S-1R) was obtained in the same manner as in Example 1, except that a solution containing the copolymer [A-1R] was used instead of the solution containing the copolymer [A-1]. ) Was prepared and evaluated. The results are shown in Table 1.

Comparative Example 2
A solution containing the copolymer [A-2R] obtained in Comparative Synthesis Example 2 (corresponding to 100 parts by weight (solid content) of the copolymer {A-2R]);
As component [B], 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1 mol) and 1,2-naphthoquinonediazide-5 Condensation product with sulfonic acid chloride (2 mol) (4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol-1,2-naphthoquinonediazide -5-sulfonic acid ester) 30 parts by weight and γ-methacryloxypropyltrimethoxysilane 5 parts by weight were mixed and dissolved in propylene glycol monomethyl ether acetate so that the solid content concentration was 30% by weight. A radiation sensitive resin composition solution (S-2R) was prepared by filtration through a 0.5 μm Millipore filter and evaluated. The results are shown in Table 1.

It is a schematic diagram which shows the cross-sectional shape of protrusion.

Claims (7)

[A] (a1) unsaturated carboxylic acid and / or unsaturated carboxylic anhydride, (a2) compound represented by general formula (I) or general formula (II),

Wherein R is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R ¹ is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R ² , R ³ , R ⁴ and R ⁵ are each It is independently a hydrogen atom, a fluorine atom, an alkyl group having 1 to 4 carbon atoms, a phenyl group, or a perfluoroalkyl group having 1 to 4 carbon atoms, and n is an integer of 1 to 6. ]
And (a3) a copolymer obtained by copolymerizing an olefinically unsaturated compound other than (a1) and (a2),
[B] A radiation-sensitive resin composition for forming protrusions of a vertical alignment type liquid crystal display device, comprising a 1,2-quinonediazide compound. [C] The radiation-sensitive resin composition for forming protrusions of the vertical alignment type liquid crystal display device according to claim 1, further comprising a heat-sensitive acid generator. [D] The radiation-sensitive resin composition for forming projections of a vertical alignment type liquid crystal display device according to claim 1, comprising a compound having two or more epoxy groups in the molecule. [E] The following general formula (III)

(Wherein R ^{1 to} R ⁶ may be the same or different and each represents a hydrogen atom or a group —CH ₂ OR, and R represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms). The radiation-sensitive resin composition for forming protrusions of a vertical alignment type liquid crystal display device according to claim 1, comprising a compound. A method for forming protrusions of a vertical alignment type liquid crystal display element, comprising the following steps in the order described below.
(1) The process of forming the coating film of the radiation sensitive composition of Claim 1 on a board | substrate,
(2) A step of irradiating at least a part of the coating film with radiation,
(3) Development step, and (4) Heating step. The protrusion of the vertical alignment type liquid crystal display element formed from the radiation sensitive resin composition as described in any one of Claims 1-4. A liquid crystal display device comprising the protrusion according to claim 6.

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