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JP2008135325A - Organic EL display device and manufacturing method thereof - Google Patents

Organic EL display device and manufacturing method thereof Download PDF

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JP2008135325A
JP2008135325A JP2006321641A JP2006321641A JP2008135325A JP 2008135325 A JP2008135325 A JP 2008135325A JP 2006321641 A JP2006321641 A JP 2006321641A JP 2006321641 A JP2006321641 A JP 2006321641A JP 2008135325 A JP2008135325 A JP 2008135325A
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Masahiro Tanaka
政博 田中
Toshiyuki Matsuura
利幸 松浦
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Japan Display Inc
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Hitachi Displays Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • H10K59/80522Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

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Abstract

<P>PROBLEM TO BE SOLVED: To easily provide firm contact between an auxiliary wire compensating for the high resistance of a common electrode and the common electrode in an organic EL display device without a mask deposition process. <P>SOLUTION: Pixel electrodes 2 and a bank 3 are formed on the main surface of the support board 1. The auxiliary wire 6 is disposed on the bank 3, and is composed of three layers consisting of a lower layer 8, a middle layer 9, and an upper layer 10, which overhangs the middle layer 9 to form an eaves concealing the middle layer 9 from above. An organic film 4 vapor deposited on the upper layer 10 of the pixel electrodes 2 is not deposited on the middle layer 9 due to a shadowing effect by the eaves of the upper layer 10. When the transparent common electrode 5 is formed thereon by sputtering, the common electrode 5 wraps around the inside of the organic film 4 and is deposed on the under layer 8 of the auxiliary wire 6 for firm contact. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、有機発光素子を用いた有機EL表示装置に係り、特に有機発光素子の支持基板の上方に表示光を取り出す方式における精細度の向上と輝度向上を両立させた有機EL表示装置とその製造に関する。   The present invention relates to an organic EL display device using an organic light emitting element, and more particularly to an organic EL display device that achieves both improvement in definition and brightness in a method of extracting display light above a support substrate of an organic light emitting element. Regarding manufacturing.

電流制御型の発光素子を用いた表示装置(以下、ディスプレイとも称する)として、エレクトロルミネッセンス(EL)や注入型発光ダイオードを用いた構造が知られている。その中でも、有機材料を発光層とした電流制御型EL(電荷注入型EL、以下有機発光素子または有機ELとも称する)表示装置は、高輝度で大面積、製造コストが安価、且つフルカラー表示を実現可能なディスプレイデバイスとして注目されつつある。   A structure using electroluminescence (EL) or an injection type light emitting diode is known as a display device using a current control type light emitting element (hereinafter also referred to as a display). Among them, a current control type EL (charge injection type EL, hereinafter also referred to as organic light emitting element or organic EL) display device using an organic material as a light emitting layer realizes high brightness, large area, low manufacturing cost and full color display. It is attracting attention as a possible display device.

有機発光素子を用いた有機EL表示装置は、ガラスなどの絶縁性の支持基板(ここではガラス基板)が用いられ、画素を選択するスイッチング素子として一般的に用いられる薄膜トランジスタ(TFT)が形成される基板であることから、以下では、支持基板をTFT基板とも称する。このTFT基板の内面にはマトリクス配置した複数の第1電極(通常、画素電極)を備え、この画素電極上に有機材料の複数薄膜からなる有機発光層を積層し、さらに全画素を覆う共通電極を積層し、有機発光層を画素電極と共通電極とで挟持して構成される。ここでは、TFT基板の上方(有機発光素子形成面:主面側)に表示光を取り出す方式をトップエミッション型と称する。なお、TFT基板の下方に表示光を取り出す方式をボトムエミッション型と称する   In an organic EL display device using an organic light emitting element, an insulating support substrate (here, a glass substrate) such as glass is used, and a thin film transistor (TFT) generally used as a switching element for selecting a pixel is formed. Since it is a substrate, hereinafter, the support substrate is also referred to as a TFT substrate. The inner surface of the TFT substrate is provided with a plurality of first electrodes (usually pixel electrodes) arranged in a matrix, an organic light emitting layer made of a plurality of thin films of organic material is laminated on the pixel electrodes, and a common electrode that covers all the pixels And an organic light emitting layer is sandwiched between a pixel electrode and a common electrode. Here, a method of extracting display light above the TFT substrate (organic light emitting element formation surface: main surface side) is referred to as a top emission type. Note that the method of extracting display light below the TFT substrate is referred to as a bottom emission type.

図11は、トップエミッション型の有機EL表示装置の全体構造例を模式的に説明する断面図である。なお、図11では説明を簡単にするために、薄膜トランジスタや発光輝度を制御する制御素子等は図示を省略している。   FIG. 11 is a cross-sectional view schematically illustrating an example of the overall structure of a top emission type organic EL display device. Note that in FIG. 11, illustration of a thin film transistor, a control element that controls light emission luminance, and the like is omitted for the sake of simplicity.

図11に示すように、有機EL表示装置は、主面に複数の有機発光素子からなる画素回路である画素部14を形成した支持基板1と、画素部14を外部雰囲気から保護する透光性の封止板(封止缶とも称する)15とを対向させ、両基板の周縁部にシール材17を塗布して硬化させ、貼り合わせることによってその内部を外部雰囲気から隔離して封止し、画素部14に湿気が浸入するのを防止している。封止板15は透光性ガラス基板などが用いられる。封止板16の内面には、主として画素部14の有機発光素子が湿度による発光特性の劣化を抑制するための透明吸湿剤16が塗布又は貼付されるのが一般的である。   As shown in FIG. 11, the organic EL display device includes a support substrate 1 on which a pixel portion 14 that is a pixel circuit including a plurality of organic light emitting elements is formed on a main surface, and a light-transmitting property that protects the pixel portion 14 from an external atmosphere. The sealing plate (also referred to as a sealing can) 15 is made to face, the sealing material 17 is applied to the peripheral portions of both substrates and cured, and the inside thereof is isolated and sealed from the outside atmosphere by bonding, This prevents moisture from entering the pixel portion 14. As the sealing plate 15, a translucent glass substrate or the like is used. In general, a transparent hygroscopic agent 16 is mainly applied to or pasted on the inner surface of the sealing plate 16 in order to suppress deterioration of the light emission characteristics of the organic light emitting element of the pixel portion 14 due to humidity.

このように構成される有機EL表示装置は、画素部14を構成する第1電極(画素電極)と第2電極(共通電極)との間に有機EL発光層(単に有機発光層、有機層とも称する)を挟持して構成され、第1電極と第2電極の間に所定の電圧を印加することにより流れる電流の大きさで有機EL発光層が発光する。その発光Lは透光性の封止板15側から出射する。この種のトップエミッション型の有機EL表示装置を開示したものとして特許文献1を挙げることができる。また、後述する本発明の課題に関係する共通電極の抵抗を補償する補助配線に関しては、特許文献1と共に、特許文献2を挙げることができる。
特開2002−318556号公報 特開平10−12386号公報
The organic EL display device configured as described above has an organic EL light emitting layer (both simply an organic light emitting layer and an organic layer) between a first electrode (pixel electrode) and a second electrode (common electrode) constituting the pixel unit 14. The organic EL light emitting layer emits light with the magnitude of the flowing current by applying a predetermined voltage between the first electrode and the second electrode. The emitted light L is emitted from the translucent sealing plate 15 side. Patent Document 1 can be cited as a disclosure of this type of top emission type organic EL display device. Patent Document 2 and Patent Document 2 can be cited as auxiliary wiring for compensating for the resistance of the common electrode related to the problem of the present invention described later.
JP 2002-318556 A Japanese Patent Laid-Open No. 10-12386

このように構成されるトップエミッション型の有機EL表示装置は、ボトムエミッション型と比較して、薄膜トランジスタを含む画素回路の上にも発光層を設置できるため、高開口率化ができるというメリットがある。しかし、その反面、共通電極が透明導電膜であることが必要となり、ITOやIZO等の非金属導電薄膜が用いられる。これらITOやIZO等の導電薄膜の電気抵抗は金属薄膜に比べて高いので、この低抵抗を補うための補助配線を設けることが望ましいとされている。   Compared with the bottom emission type, the top emission type organic EL display device configured as described above has an advantage that a light emitting layer can be installed on a pixel circuit including a thin film transistor, so that the aperture ratio can be increased. . However, on the other hand, the common electrode needs to be a transparent conductive film, and a non-metallic conductive thin film such as ITO or IZO is used. Since the electric resistance of these conductive thin films such as ITO and IZO is higher than that of the metal thin film, it is desirable to provide an auxiliary wiring to compensate for this low resistance.

補助配線の形成位置は、有機EL素子の有機層の上、もしくは共通電極の上にマスク蒸着で形成する場合、画素電極形成側基板であるTFT基板の画素電極に並べて形成する場合、あるいはTFT基板のパッシベーション膜の下に形成しておき、コンタクトホールをパッシベーション膜に開けて接続する場合がある。   The auxiliary wiring is formed on the organic layer of the organic EL element or on the common electrode by mask vapor deposition, when it is formed side by side on the pixel electrode of the TFT substrate which is the pixel electrode forming substrate, or the TFT substrate In some cases, the contact hole is formed under the passivation film and a contact hole is opened in the passivation film.

補助配線をマスク蒸着で形成する場合は、細い配線の形成は20μm程度の線幅が限界である。テレビ用などの大型のディスプレイではこれでもよいが、モバイル端末などの小型の高精細ディスプレイでは、この程度の幅では広すぎるし、またマスクの位置あわせ精度も考慮すると、さらに広い幅を補助配線に割り当てる必要がある。   When the auxiliary wiring is formed by mask vapor deposition, the thin line is limited to a line width of about 20 μm. This can be used for large displays such as for TVs, but this size is too wide for small high-definition displays such as mobile devices. Considering the mask alignment accuracy, a wider width can be used for auxiliary wiring. Must be assigned.

補助配線をTFT基板の主面上で画素電極に並べて形成する場合も、位置合わせ精度はホトグラフィー工程(以下、ホト工程)の程度となり、数μmの線幅が可能なため、開口率に影響を与えない範囲で形成できる。しかし、共通電極との電気的コンタクトを取るためには有機層を補助配線上につけないようにする必要がある。また、カラーの有機EL表示装置を構成する場合には、各色共通層であってもマスク蒸着をする必要があり、またモノクロ表示の場合でもマスク蒸着を必要とするので、高精度のマスク位置合わせが必要である。   Even when the auxiliary wiring is formed side by side on the main surface of the TFT substrate on the pixel electrode, the alignment accuracy is about the same as that of the photolithography process (hereinafter referred to as the “photo process”), and the line width of several μm is possible, which affects the aperture ratio. Can be formed within a range that does not give. However, in order to make electrical contact with the common electrode, it is necessary not to attach the organic layer on the auxiliary wiring. In addition, when configuring a color organic EL display device, it is necessary to perform mask vapor deposition even for each color common layer, and mask vapor deposition is necessary even in the case of monochrome display. is required.

補助配線の形成に関して、前記の特許文献1、2には、補助配線を画素電極と同層に形成し、かつ画素電極とは電気的に絶縁して共通電極に電気的に接続した構成が開示されている。しかし、これらの文献記載の技術では発光層である有機層を補助配線を避けて蒸着する必要があり、複数色の共通な層も含めて有機層全てをマスク蒸着することになり、蒸着回数が増え、生産性が著しく低下する。   Regarding the formation of the auxiliary wiring, the above Patent Documents 1 and 2 disclose a configuration in which the auxiliary wiring is formed in the same layer as the pixel electrode, and is electrically insulated from the pixel electrode and electrically connected to the common electrode. Has been. However, in the techniques described in these documents, it is necessary to vapor-deposit an organic layer that is a light emitting layer while avoiding auxiliary wiring, and all the organic layers including a common layer of a plurality of colors are vapor-deposited by mask. Increases productivity significantly.

本発明は、上記従来技術における課題を解決することにあり、その目的は、ホト工程の精度で基板側に設けた補助配線にマスク蒸着によらずに共通電極とのコンタクトが容易かつ確実にとれるようにした有機EL表示装置とその製造方法を提供することにある。   An object of the present invention is to solve the above-described problems in the prior art, and an object of the present invention is to easily and reliably make contact with a common electrode on the auxiliary wiring provided on the substrate side with accuracy of a photo process without using mask deposition. An object of the present invention is to provide an organic EL display device and a manufacturing method thereof.

上記目的を達成するための本発明の代表的構成を記述すれば、次のとおりである。すなわち、
(1)本発明による有機EL表示装置は、有機発光素子からなる画素部を形成した支持基板と、前記画素部を外部雰囲気から保護する透光性の封止板とを具備し、前記画素部は、画素ごとに設けた反射性の第1電極と、第1電極の上に配置した有機発光層と、複数の画素に対して共通に設けた透明導電膜からなる第2電極と、隣接する第1電極の間の絶縁層の上に設けられて前記第2電極に接続した補助配線とを有し、
前記補助配線は、金属膜からなる下層膜と、前記下層膜の上層で、かつ当該下層膜の端縁から前記第1電極方向に迫り出た庇を形成した幅広層とを有し、前記第2電極の端部が、前記幅広層による庇に隠された部分で前記下層膜の上から電気的に接続していることを特徴とする。
A typical configuration of the present invention for achieving the above object will be described as follows. That is,
(1) An organic EL display device according to the present invention includes a support substrate on which a pixel portion made of an organic light emitting element is formed, and a translucent sealing plate that protects the pixel portion from an external atmosphere, and the pixel portion Is adjacent to a reflective first electrode provided for each pixel, an organic light-emitting layer disposed on the first electrode, and a second electrode made of a transparent conductive film provided in common to a plurality of pixels. An auxiliary wiring provided on the insulating layer between the first electrodes and connected to the second electrode;
The auxiliary wiring includes a lower layer film made of a metal film, and a wide layer formed on the upper layer of the lower layer film and having a ridge protruding from an edge of the lower layer film toward the first electrode. The ends of the two electrodes are electrically connected from above the lower layer film at a portion hidden in the ridge by the wide layer.

また、本発明の有機EL表示装置の前記補助配線は、前記金属膜からなる下層膜の上に積層された中層膜、および前記中層膜の上に積層された上層膜との3層からなり、前記上層膜は前記下層膜と同じ材料の金属膜で、前記中層膜は前記下層膜および前記上層膜とは異なる材料の金属膜であることを特徴とする。   Further, the auxiliary wiring of the organic EL display device of the present invention consists of three layers: an intermediate layer film stacked on the lower layer film made of the metal film, and an upper layer film stacked on the intermediate layer film, The upper layer film is a metal film made of the same material as the lower layer film, and the intermediate layer film is a metal film made of a material different from that of the lower layer film and the upper layer film.

(2)本発明による有機EL表示装置の製造方法は、前記支持基板の主面に、薄膜トランジスタ、画素ごとに設けた反射性の第1電極、隣接する第1電極の端縁を覆って設けた絶縁層を形成し、
前記絶縁層に沿い、かつその上に補助配線となる3層メタル材料を重ねてスパッタ成膜し、パターニングして断面が矩形の下層膜、中層膜および上層膜からなる3層膜を成膜し、
前記3層膜の側面に露出した3層膜の前記中層膜のみを選択的にエッチングして、当該中層膜の端縁を前記下層膜および前記上層膜の端縁から後退させ、
前記支持基板の主面の上方から、有機発光層を蒸着し、続いて複数の画素に共通の共通電極をスパッタすることにより、
前記真空蒸着とスパッタの付き回り性の違いで、前記共通電極が前記補助配線の下層膜に接続させることを特徴とする。
(2) In the method for manufacturing an organic EL display device according to the present invention, a thin film transistor, a reflective first electrode provided for each pixel, and an edge of an adjacent first electrode are provided on the main surface of the support substrate. Forming an insulating layer,
A three-layer metal material serving as an auxiliary wiring is formed along the insulating layer and sputtered thereon, and patterned to form a three-layer film composed of a lower layer film, a middle layer film, and an upper layer film having a rectangular cross section. ,
Selectively etching only the middle layer film of the three layer film exposed on the side surface of the three layer film, and retracting the edge of the middle layer film from the edge of the lower layer film and the upper layer film;
By depositing an organic light emitting layer from above the main surface of the support substrate, and subsequently sputtering a common electrode common to a plurality of pixels,
The common electrode is connected to the lower layer film of the auxiliary wiring due to the difference in the vacuum deposition and sputtering.

また、本発明は、前記3層メタル材料は、前記下層膜と上層膜がチタン、前記中層膜がアルミニウム、前記中層膜の選択的エッチングが、アルミニウムのみを溶解するウエットエッチングであることを特徴とする。   In the invention, the three-layer metal material is characterized in that the lower layer film and the upper layer film are titanium, the intermediate layer film is aluminum, and the selective etching of the intermediate layer film is wet etching in which only aluminum is dissolved. To do.

なお、本発明は、上記各構成及び後述する実施の形態に記載される構成に限定されるものではなく、本発明の技術思想を逸脱することなく、種々の変更が可能であることは言うまでもない。   It should be noted that the present invention is not limited to the above-described configurations and the configurations described in the embodiments described later, and it goes without saying that various modifications can be made without departing from the technical idea of the present invention. .

基板上にホト工程により形成した微細な線幅の補助配線に発光層を構成する有機層をマスクなしに全面蒸着しても、当該補助配線と共通電極とのコンタクトがなされるので、工程が簡略化される。有機層は真空蒸着でカバレッジが良好でないため、補助配線をシャドウイングするような構造物があると、カバーされない部分が残る。透明電極である共通電極をスパッタ法で形成すると、付き回り性が真空蒸着よりも遥かに高いので、真空蒸着でカバーしていない部分にも共通電極は付着し、補助配線と共通電極とのコンタクトが取られる。   Even if the organic layer constituting the light emitting layer is deposited on the entire surface without a mask on the auxiliary wiring with a fine line width formed on the substrate by the photo process, the auxiliary wiring and the common electrode are contacted, so the process is simplified. It becomes. Since the organic layer does not have good coverage by vacuum deposition, if there is a structure that shadows the auxiliary wiring, an uncovered portion remains. When the common electrode, which is a transparent electrode, is formed by sputtering, the throwing power is much higher than that of vacuum deposition, so the common electrode also adheres to the parts not covered by vacuum deposition, and the contact between the auxiliary wiring and the common electrode Is taken.

また、高精度の補助配線をTFT基板に形成することで買い効率を犠牲にすることなく、また異なる発光色の有機層の塗り分けでマスク蒸着が必要な部分を除いては細かいパターンのマスク蒸着は不要となるため、共通電極は一括で蒸着でき、生産性も確保される。さらに、高精度の補助配線が使えるため、中型サイズ、大型サイズのディスプレイでもトップエミッション有機EL表示装置の高開口率、あるいはTFT工程の簡略化が可能となる。   In addition, by forming high-precision auxiliary wiring on the TFT substrate, fine pattern mask vapor deposition is possible without sacrificing buying efficiency and excluding the portion where mask vapor deposition is required by coating different organic layers with different emission colors. Since the common electrode is not necessary, the common electrode can be vapor-deposited in a batch, and the productivity is also ensured. Furthermore, since high-precision auxiliary wiring can be used, a high aperture ratio of the top emission organic EL display device or a simplification of the TFT process can be achieved even in a medium-sized or large-sized display.

以下、本発明の具体的な実施の形態について、実施例の図面を参照して詳細に説明する。   Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings of the examples.

図1は、本発明による有機EL表示装置の実施例1を説明する要部平面図である。また、図2は、図1のA−A’線に沿った断面図である。図1の平面図はカラー1画素を構成する副画素R(赤)、G(緑)、B(青)部分を示す。図1において、各副画素R(赤)、G(緑)、B(青)は画素電極2で示してあるが、この画素電極2の上には図2に示したように、有機発光層4、共通電極5が積層される。各副画素R(赤)、G(緑)、B(青)の間には絶縁層で形成されたバンク3が形成されており、このバンク3の上に補助配線6が形成されている。なお、ここでは、説明を簡単にするため、副画素と画素の区別をつける必要な場合を除いて、副画素も単に画素として表記する。   FIG. 1 is a plan view of an essential part for explaining Example 1 of an organic EL display device according to the present invention. FIG. 2 is a cross-sectional view taken along the line A-A ′ of FIG. 1. The plan view of FIG. 1 shows sub-pixel R (red), G (green), and B (blue) portions that constitute one color pixel. In FIG. 1, each of the sub-pixels R (red), G (green), and B (blue) is indicated by a pixel electrode 2. On the pixel electrode 2, as shown in FIG. 4. The common electrode 5 is laminated. A bank 3 made of an insulating layer is formed between the sub-pixels R (red), G (green), and B (blue), and an auxiliary wiring 6 is formed on the bank 3. Here, for the sake of simplicity, the sub-pixel is also simply referred to as a pixel unless it is necessary to distinguish the sub-pixel from the pixel.

図2に示したように、支持基板1の主面に各副画素を構成する画素電極2がバンク3で絶縁されて形成されている。バンク3は絶縁層であり、隣接する副画素の有機発光層を構成する有機膜4を区画する機能も有する。図1には、バンク3が画素を取り囲むように形成されている。補助配線6は画素電極2を取り囲むように同色画素の配列方向(図1の上下方向)とカラー1画素素子を構成する副画素R(赤)、G(緑)、B(青)の配列方向(図3の左右方向)から取り囲んで形成されている。しかし、上下方向のみ、あるいは左右方向のみにストライプ状に形成することもできる。バンク3は画素電極2の端縁の一部を覆って形成されており、このバンク3の上に補助配線6が形成されている。補助配線6は下層8、中層9、上層10の3層からなる。3層は全て低抵抗の金属膜とする。   As shown in FIG. 2, the pixel electrode 2 constituting each subpixel is formed on the main surface of the support substrate 1 so as to be insulated by the bank 3. The bank 3 is an insulating layer and has a function of partitioning the organic film 4 constituting the organic light emitting layer of the adjacent subpixel. In FIG. 1, the bank 3 is formed so as to surround the pixel. The auxiliary wiring 6 surrounds the pixel electrode 2, and the arrangement direction of the same color pixels (up and down direction in FIG. 1) and the arrangement direction of the sub-pixels R (red), G (green), and B (blue) constituting one color pixel element. It is formed surrounding (from the left-right direction in FIG. 3). However, it can also be formed in stripes only in the vertical direction or only in the horizontal direction. The bank 3 is formed so as to cover a part of the edge of the pixel electrode 2, and the auxiliary wiring 6 is formed on the bank 3. The auxiliary wiring 6 includes three layers of a lower layer 8, a middle layer 9, and an upper layer 10. All three layers are metal films with low resistance.

3層の補助配線6は、その中層9が下層8と上層10の端縁から後退して形成されている。図2に示されたように、補助配線6は中央が凹む形状となっている。言い換えれば、上層10が中層9よりも迫り出して上層10が中層9の庇となっており、有機膜4を蒸着する際に、この上層10の庇によるシャドウイング効果で中層9に有機膜4が付かない。透明な共通電極5は、スパッタ法で形成する。これにより、共通電極5は有機膜4の内側に回り込んで下層8に付き、共通電極5と補助配線6とのコンタクト(電気的接続)がとられる。なお、補助配線6を構成する3層は、上記のように全て低抵抗の金属とすることが望ましいが、下層のみを低抵抗金属とし、中層と上層は絶縁体、半導体であってもよい。しかし、補助配線の電気的抵抗を下げる目的を考えれば3層ともに金属膜とするのが望ましい。   The three-layer auxiliary wiring 6 is formed such that the middle layer 9 recedes from the edges of the lower layer 8 and the upper layer 10. As shown in FIG. 2, the auxiliary wiring 6 has a shape in which the center is recessed. In other words, the upper layer 10 protrudes more than the middle layer 9 so that the upper layer 10 becomes a wrinkle of the middle layer 9. When the organic film 4 is deposited, the shadowing effect of the upper layer 10 causes a shadowing effect on the middle layer 9. Is not attached. The transparent common electrode 5 is formed by sputtering. As a result, the common electrode 5 wraps inside the organic film 4 and is attached to the lower layer 8, and contact (electrical connection) between the common electrode 5 and the auxiliary wiring 6 is established. The three layers constituting the auxiliary wiring 6 are preferably made of low resistance metal as described above, but only the lower layer may be made of low resistance metal, and the middle layer and upper layer may be made of an insulator and a semiconductor. However, considering the purpose of reducing the electrical resistance of the auxiliary wiring, it is desirable that all three layers be metal films.

なお、3層の補助配線6は、例えば次のようにして形成される。先ず、チタン(Ti)/アルミニウム(Al)/チタン(Ti)の3層メタルを重ねてスパッタ成膜する。これをホト工程でパターニングし、エッチングして断面が矩形の3層(Ti/Al/Ti)膜を得る。その後、弱アルカリやアルミニウムのエッチング液を用いて中層9のAl層のみを選択的にエッチングすることで、中層0のAl層が凹んだ補助配線6が得られる。この断面形状により、上記のように共通電極5と補助配線6とのコンタクトがとられる。   The three-layer auxiliary wiring 6 is formed as follows, for example. First, a titanium (Ti) / aluminum (Al) / titanium (Ti) three-layer metal is stacked to form a sputter film. This is patterned by a photo process and etched to obtain a three-layer (Ti / Al / Ti) film having a rectangular cross section. Thereafter, only the Al layer of the middle layer 9 is selectively etched using a weak alkali or aluminum etching solution, whereby the auxiliary wiring 6 in which the Al layer of the middle layer 0 is recessed is obtained. Due to this cross-sectional shape, the common electrode 5 and the auxiliary wiring 6 are contacted as described above.

実施例1の構成により、簡略化した工程で補助配線の形成ができ、低抵抗の共通電極を有して、高精細、高開口率の有機EL表示装置が得られる。   With the configuration of Embodiment 1, auxiliary wiring can be formed by a simplified process, and a high-definition, high aperture ratio organic EL display device having a low-resistance common electrode can be obtained.

図3は、本発明による有機EL表示装置の実施例2を説明する要部平面図である。また、図4は、図3のB−B’線に沿った断面図である。実施例1と同様に、図3の平面図はカラー1画素を構成する副画素R(赤)、G(緑)、B(青)部分を示す。実施例1の図面における符号と同じ符号は同じ機能部分を示す。実施例2では、支持基板(TFT基板)1のバンク3の中に補助配線6を埋めてあり、スルーホール7を通して表面の共通電極5とのコンタクトを取っている。補助配線6はカラー1画素を構成する副画素R(赤)、G(緑)、B(青)の配列方向(図3の左右方向)でバンク3の中に配置されている。補助配線6と表面の共通電極5は、スルーホール7を通してコンタクトされている。   FIG. 3 is a plan view of an essential part for explaining Example 2 of the organic EL display device according to the present invention. 4 is a cross-sectional view taken along line B-B ′ of FIG. Similar to the first embodiment, the plan view of FIG. 3 shows sub-pixels R (red), G (green), and B (blue) constituting one color pixel. The same reference numerals as those in the drawing of Embodiment 1 denote the same functional parts. In the second embodiment, the auxiliary wiring 6 is buried in the bank 3 of the support substrate (TFT substrate) 1, and contact is made with the common electrode 5 on the surface through the through hole 7. The auxiliary wiring 6 is arranged in the bank 3 in the arrangement direction of the sub-pixels R (red), G (green), and B (blue) that constitute one color pixel (the horizontal direction in FIG. 3). The auxiliary wiring 6 and the common electrode 5 on the surface are in contact through the through hole 7.

TFT基板1の主面には、画素電極2が形成されており、この画素電極と同層に画素電極と同じ材料の導電層2’が残されている。スルーホール7は導電層2’に達して形成されている。このスルーホール7に3層の補助配線6が形成されている。層の補助配線6は実施例1と同様に、上層金属10が中層金属9よりもせり出しており、有機膜4を蒸着する際に、この上層金属10のシャドウイング効果で中層金属9に有機膜4が付かない。透明な共通電極5は、スパッタ法で形成する。これにより、共通電極5は有機膜4の内側に回り込んで下層金属8に付き、共通電極5と補助配線6とのコンタクトがとられる。   A pixel electrode 2 is formed on the main surface of the TFT substrate 1, and a conductive layer 2 'made of the same material as the pixel electrode is left in the same layer as the pixel electrode. The through hole 7 reaches the conductive layer 2 '. Three layers of auxiliary wiring 6 are formed in the through hole 7. In the same manner as in Example 1, the upper layer metal 10 protrudes from the middle layer metal 9 in the layer auxiliary wiring 6, and when the organic film 4 is deposited, the upper layer metal 10 shadows the middle layer metal 9 to form the organic film. 4 is not attached. The transparent common electrode 5 is formed by sputtering. As a result, the common electrode 5 wraps inside the organic film 4 and attaches to the lower layer metal 8, and the common electrode 5 and the auxiliary wiring 6 are brought into contact.

なお、補助配線6を構成する3層は、上記した実施例1と同様に全て低抵抗の金属とすることが望ましいが、少なくとも下層のみは低抵抗金属とし、中層と上層は絶縁体、半導体であってもよい。しかし、補助配線の電気的抵抗を下げる目的を考えれば3層ともに金属膜とするのが望ましい。なお、3層の補助配線6の下層にある導電層2’は補助配線6の抵抗をさらに下げる効果がある。   The three layers constituting the auxiliary wiring 6 are preferably made of a low-resistance metal as in the first embodiment, but at least only the lower layer is made of a low-resistance metal, and the middle and upper layers are made of an insulator and a semiconductor. There may be. However, considering the purpose of reducing the electrical resistance of the auxiliary wiring, it is desirable that all three layers be metal films. The conductive layer 2 ′ below the three-layer auxiliary wiring 6 has an effect of further reducing the resistance of the auxiliary wiring 6.

実施例2の構成によっても、簡略化した工程で補助配線の形成ができ、低抵抗の共通電極を有して、高精細、高開口率の有機EL表示装置が得られる。   Also with the configuration of Example 2, the auxiliary wiring can be formed by a simplified process, and a high-definition, high aperture ratio organic EL display device having a low-resistance common electrode can be obtained.

図5は、本発明による有機EL表示装置の実施例3を説明する要部平面図である。また、図6は、図5のC−C’線に沿った断面図である。実施例3では、支持基板1の主面に形成されるデータ配線23、電源線24と同層かつ同じ低抵抗金属膜11を設け、その上に端縁が上層のバンク3の端縁よりも後退した金属膜12が積層されている。データ配線23、電源線24は画素領域内に形成されており、図5ではそれらを点線で示してある。画素電極2の上に有機膜を真空蒸着し、さらにその上に透明な共通電極5をスパッタする。このとき、真空蒸着とスパッタの付き回り性の違いで、当該共通電極5が金属膜12の後退部分に回り込んで低抵抗金属膜11に接続してコンタクトが取られる。金属膜12の後退加工は、前記実施例と同様に、エッチング性の違いを利用する。   FIG. 5 is a plan view of an essential part for explaining Example 3 of the organic EL display device according to the present invention. FIG. 6 is a cross-sectional view taken along line C-C ′ in FIG. 5. In the third embodiment, the same low-resistance metal film 11 as the data wiring 23 and the power supply line 24 formed on the main surface of the support substrate 1 is provided, and the edge is higher than the edge of the upper bank 3. A receding metal film 12 is laminated. The data wiring 23 and the power supply line 24 are formed in the pixel region, and are shown by dotted lines in FIG. An organic film is vacuum-deposited on the pixel electrode 2, and a transparent common electrode 5 is sputtered thereon. At this time, due to the difference in coverage between vacuum deposition and sputtering, the common electrode 5 goes around the receding portion of the metal film 12 and is connected to the low-resistance metal film 11 to be contacted. The recessing process of the metal film 12 utilizes the difference in etching property as in the above embodiment.

実施例3の構成によっても、簡略化した工程で補助配線の形成ができ、低抵抗の共通電極を有して、高精細、高開口率の有機EL表示装置が得られる。   Also with the configuration of Embodiment 3, the auxiliary wiring can be formed by a simplified process, and a high-definition, high aperture ratio organic EL display device having a low-resistance common electrode can be obtained.

図7は、本発明による有機EL表示装置の実施例4を説明する要部平面図である。また、図8は、図7における補助配線の拡大平面図である。そして、図9は、図8のD−D’線に沿った断面図である。実施例4は、補助配線6を同色の画素で2の配列方向(上下方向)に沿って設けている。補助配線6は、基板1の主面に画素電極2と同層に形成した3層の配線層(例えば、Ti/Al/Ti)で構成される。この場合、3層の下層8と上層10はTiで、中層はAlとなる。   FIG. 7 is a plan view of an essential part for explaining Example 4 of the organic EL display device according to the present invention. FIG. 8 is an enlarged plan view of the auxiliary wiring in FIG. FIG. 9 is a cross-sectional view taken along the line D-D ′ of FIG. 8. In the fourth embodiment, the auxiliary wiring 6 is provided in the same color pixel along the two arrangement directions (vertical direction). The auxiliary wiring 6 is composed of three wiring layers (for example, Ti / Al / Ti) formed on the main surface of the substrate 1 in the same layer as the pixel electrode 2. In this case, the three lower layers 8 and 10 are Ti, and the middle layer is Al.

基板1の主面に3層の配線層を形成後、ドライエッチングで画素電極形成部分と補助配線形成部分とを分離する。この上にCVDで窒化シリコン(SiN)を成膜して保護膜(パッシベーション膜)を成膜する。この保護膜は画素電極の周囲ではバンク3となる。すなわち、この保護膜は3層の配線層の画素電極形成部分で除去される。このとき、補助配線形成部分の縁に沿って複数のコンタクトホール7を形成する。コンタクトホール7では、3層の配線層の側面が露出される。この状態でエッチング液に浸すことで、中層9であるAl膜がエッチング加工されて下層8と上層10の端縁から後退し、側面の中層9が凹んだ形状となる。この状態を図8に示す。その後、画素電極形成部分の上層を反応性イオンエッチングで除去し、中層9を露出させる。中層9はAl膜で、高反射性である。   After forming three wiring layers on the main surface of the substrate 1, the pixel electrode forming portion and the auxiliary wiring forming portion are separated by dry etching. A silicon nitride (SiN) film is formed thereon by CVD to form a protective film (passivation film). This protective film becomes the bank 3 around the pixel electrode. That is, this protective film is removed at the pixel electrode formation portion of the three wiring layers. At this time, a plurality of contact holes 7 are formed along the edge of the auxiliary wiring forming portion. In the contact hole 7, the side surfaces of the three wiring layers are exposed. By immersing in the etching solution in this state, the Al film which is the middle layer 9 is etched, retreats from the edges of the lower layer 8 and the upper layer 10, and the side layer 9 is recessed. This state is shown in FIG. Thereafter, the upper layer of the pixel electrode forming portion is removed by reactive ion etching to expose the middle layer 9. The middle layer 9 is an Al film and is highly reflective.

このようにして、コンタクトホール7の両側(画素電極2側)に図9に示した断面構造のシャドウイング構造が形成される。この上から有機発光層を構成する有機膜4を蒸着し、これに連続して共通電極5となるITOなどの透明導電膜をスパッタする。その結果、付き回り性の違いから、有機膜4が付着していない補助配線6の下層8の上にITO等が回り込んで付着し、共通電極5と補助配線6がコンタクトする。   In this manner, the shadowing structure having the cross-sectional structure shown in FIG. 9 is formed on both sides (pixel electrode 2 side) of the contact hole 7. An organic film 4 constituting the organic light emitting layer is deposited from above, and a transparent conductive film such as ITO, which becomes the common electrode 5, is continuously sputtered thereon. As a result, ITO or the like wraps around and adheres to the lower layer 8 of the auxiliary wiring 6 to which the organic film 4 is not attached due to the difference in the throwing power, and the common electrode 5 and the auxiliary wiring 6 come into contact with each other.

実施例4の構成によっても、簡略化した工程で補助配線の形成ができ、低抵抗の共通電極を有して、高精細、高開口率の有機EL表示装置が得られる。   Also with the configuration of Example 4, auxiliary wiring can be formed by a simplified process, and a high-definition, high aperture ratio organic EL display device having a low-resistance common electrode can be obtained.

図10は、有機EL表示装置の駆動回路を含めた等価回路である。有機EL表示装置は、TFTや有機EL素子を形成した支持基板1と封止板15で構成される。この例では、画素PXはTFT1、TFT2、保持容量Cs、有機EL素子で構成される。この画素PXをマトリクス状に複数個配列して画素部(表示領域)14を形成する。データ線23はデータ線駆動回路21により駆動される。また、走査線22は走査線駆動回路20で駆動される。有機EL素子への電流供給線である電源線24は電流供給バスライン25を介して図示しない電流供給回路に接続している。   FIG. 10 is an equivalent circuit including a drive circuit of the organic EL display device. The organic EL display device includes a support substrate 1 on which TFTs and organic EL elements are formed, and a sealing plate 15. In this example, the pixel PX includes TFT1, TFT2, a storage capacitor Cs, and an organic EL element. A plurality of pixels PX are arranged in a matrix to form a pixel portion (display area) 14. The data line 23 is driven by the data line driving circuit 21. The scanning line 22 is driven by the scanning line driving circuit 20. A power supply line 24 that is a current supply line to the organic EL element is connected to a current supply circuit (not shown) via a current supply bus line 25.

本発明による有機EL表示装置の実施例1を説明する要部平面図である。It is a principal part top view explaining Example 1 of the organic electroluminescent display apparatus by this invention. 図1のA−A’線に沿った断面図である。It is sectional drawing along the A-A 'line of FIG. 本発明による有機EL表示装置の実施例2を説明する要部平面図である。It is a principal part top view explaining Example 2 of the organic electroluminescence display by this invention. 図3のB−B’線に沿った断面図である。FIG. 4 is a cross-sectional view taken along line B-B ′ of FIG. 3. 本発明による有機EL表示装置の実施例3を説明する要部平面図である。It is a principal part top view explaining Example 3 of the organic electroluminescence display by this invention. 図5のC−C’線に沿った断面図である。FIG. 6 is a cross-sectional view taken along line C-C ′ of FIG. 5. 本発明による有機EL表示装置の実施例4を説明する要部平面図である。It is a principal part top view explaining Example 4 of the organic electroluminescence display by this invention. 図7における補助配線の拡大平面図である。It is an enlarged plan view of the auxiliary wiring in FIG. 図8のD−D’線に沿った断面図である。It is sectional drawing along the D-D 'line of FIG. 有機EL表示装置の駆動回路を含めた等価回路である。It is an equivalent circuit including a drive circuit of an organic EL display device. トップエミッション型の有機EL表示装置の全体構造例を模式的に説明する断面図である。It is sectional drawing which illustrates typically the example of the whole structure of a top emission type organic electroluminescence display.

符号の説明Explanation of symbols

1・・・支持基板、2・・・画素電極、3・・・バンク、4・・・有機発光層を構成する有機膜、5・・・共通電極、6・・・補助配線、7・・・コンタクトホール、8・・・下層、9・・・中層、10・・・上層、14・・・画素部、15・・・封止板。   DESCRIPTION OF SYMBOLS 1 ... Support substrate, 2 ... Pixel electrode, 3 ... Bank, 4 ... Organic film | membrane which comprises an organic light emitting layer, 5 ... Common electrode, 6 ... Auxiliary wiring, 7 ... Contact hole, 8 ... lower layer, 9 ... middle layer, 10 ... upper layer, 14 ... pixel part, 15 ... sealing plate.

Claims (10)

有機発光素子からなる画素部を形成した支持基板と、前記画素部を外部雰囲気から保護する透光性の封止板とを具備し、
前記画素部は、画素ごとに設けた反射性の第1電極と、第1電極の上に配置した有機発光層と、複数の画素に対して共通に設けた透明導電膜からなる第2電極と、隣接する第1電極の間の絶縁層の上に設けられて前記第2電極に接続した補助配線とを有し、
前記補助配線は、金属膜からなる下層膜と、前記下層膜の上層で、かつ当該下層膜の端縁から前記第1電極方向に迫り出た庇を形成する幅広層とを有し、
前記第2電極の端部が、前記幅広層による前記庇に隠された部分で前記下層膜の上から電気的に接続していることを特徴とする有機EL表示装置。
A support substrate on which a pixel portion made of an organic light emitting element is formed, and a translucent sealing plate that protects the pixel portion from an external atmosphere;
The pixel unit includes a reflective first electrode provided for each pixel, an organic light emitting layer disposed on the first electrode, and a second electrode made of a transparent conductive film provided in common to a plurality of pixels. An auxiliary wiring provided on the insulating layer between the adjacent first electrodes and connected to the second electrode,
The auxiliary wiring has a lower layer film made of a metal film, and a wide layer that forms a ridge that is an upper layer of the lower layer film and that protrudes from an edge of the lower layer film toward the first electrode,
The organic EL display device, wherein an end portion of the second electrode is electrically connected from above the lower layer film at a portion hidden by the wide layer.
請求項1において、
前記補助配線は、前記金属膜からなる下層膜の上に積層された中層膜、および前記中層膜の上に積層された上層膜との3層からなり、
前記上層膜は前記下層膜と同じ材料の金属膜で、前記中層膜は前記下層膜および前記上層膜とは異なる材料の金属膜であることを特徴とする有機EL表示装置。
In claim 1,
The auxiliary wiring consists of three layers: an intermediate layer film laminated on the lower layer film made of the metal film, and an upper layer film laminated on the intermediate layer film,
The organic EL display device, wherein the upper layer film is a metal film made of the same material as the lower layer film, and the intermediate layer film is a metal film made of a material different from the lower layer film and the upper layer film.
請求項2において、
前記下層膜および前記上層膜はチタン膜であり、前記中層膜はアルミニウム膜であることを特徴とする有機EL表示装置。
In claim 2,
The organic EL display device, wherein the lower layer film and the upper layer film are titanium films, and the middle layer film is an aluminum film.
有機発光素子からなる画素部を形成した支持基板と、前記画素部を外部雰囲気から保護する透光性の封止板とを具備し、
前記画素部は、画素ごとに設けた反射性の第1電極と、第1電極の上に配置した有機発光層と、複数の画素に対して共通に設けた透明導電膜からなる第2電極と、隣接する第1電極の間の絶縁層の上に設けられて前記第2電極に接続した補助配線とを有し、
前記補助配線は、金属膜からなる下層膜と、前記下層膜の上層で、かつ当該下層膜の端縁から前記第1電極方向に迫り出た庇を形成した幅広層とを有し、
前記絶縁層の下層、かつ前記隣接する第1電極の間に前記絶縁層に沿って設けられた低抵抗金属層を有し、
前記絶縁層にコンタクトホールを有し、
前記第2電極の端部が、前記コンタクトホールにおいて前記幅広層による庇に隠された部分で前記下層膜の上から電気的に接続すると共に、前記下層膜は前記低抵抗金属層に接続していることを特徴とする有機EL表示装置。
A support substrate on which a pixel portion made of an organic light emitting element is formed, and a translucent sealing plate that protects the pixel portion from an external atmosphere;
The pixel unit includes a reflective first electrode provided for each pixel, an organic light emitting layer disposed on the first electrode, and a second electrode made of a transparent conductive film provided in common to a plurality of pixels. An auxiliary wiring provided on the insulating layer between the adjacent first electrodes and connected to the second electrode,
The auxiliary wiring has a lower layer film made of a metal film, and a wide layer formed on the upper layer of the lower layer film and a ridge protruding from the edge of the lower layer film toward the first electrode,
A low-resistance metal layer provided along the insulating layer below the insulating layer and between the adjacent first electrodes;
Having a contact hole in the insulating layer;
The end portion of the second electrode is electrically connected from above the lower layer film at a portion hidden by the wide layer in the contact hole, and the lower layer film is connected to the low resistance metal layer. An organic EL display device comprising:
請求項4において、
前記補助配線は、前記金属膜からなる下層膜の上に積層された中層膜、および前記中層膜の上に積層された上層膜との3層からなり、
前記上層膜は前記下層膜と同じ材料の金属膜で、前記中層膜は前記下層膜および前記上層膜とは異なる材料の金属膜であることを特徴とする有機EL表示装置。
In claim 4,
The auxiliary wiring consists of three layers: an intermediate layer film laminated on the lower layer film made of the metal film, and an upper layer film laminated on the intermediate layer film,
The organic EL display device, wherein the upper layer film is a metal film made of the same material as the lower layer film, and the intermediate layer film is a metal film made of a material different from the lower layer film and the upper layer film.
請求項4において、
前記下層膜および前記上層膜はチタン膜であり、前記中層膜はアルミニウム膜であることを特徴とする有機EL表示装置。
In claim 4,
The organic EL display device, wherein the lower layer film and the upper layer film are titanium films, and the middle layer film is an aluminum film.
請求項4において、
前記低抵抗金属層は前記第1電極と同じ材料からなることを特徴とする有機EL表示装置。
In claim 4,
The organic EL display device, wherein the low-resistance metal layer is made of the same material as the first electrode.
請求項4において、
前記補助配線は、前記金属膜からなる下層膜の上に積層された中層膜との2層からなり、
前記中層膜は前記下層膜とは異なる材料の金属膜であることを特徴とする有機EL表示装置。
In claim 4,
The auxiliary wiring consists of two layers, an intermediate film laminated on the lower film made of the metal film,
The organic EL display device, wherein the intermediate layer film is a metal film made of a material different from that of the lower layer film.
有機発光素子からなる画素部を形成した支持基板と、前記画素部を外部雰囲気から保護する透光性の封止板とを具備した有機EL表示装置の製造方法であって、
前記支持基板の主面に、薄膜トランジスタ、画素ごとに設けた反射性の第1電極、隣接する第1電極の端縁を覆って設けた絶縁層を形成し、
前記絶縁層に沿い、かつその上に補助配線となる3層メタル材料を重ねてスパッタ成膜し、パターニングして断面が矩形の下層膜、中層膜および上層膜からなる3層膜を成膜し、
前記3層膜の側面に露出した3層膜の前記中層膜のみを選択的にエッチングして、当該中層膜の端縁を前記下層膜および前記上層膜の端縁から後退させ、
前記支持基板の主面の上方から、有機発光層を蒸着し、続いて複数の画素に共通の共通電極をスパッタすることにより、
前記真空蒸着とスパッタの付き回り性の違いで、前記共通電極が前記補助配線の下層膜に接続させることを特徴とする有機EL表示装置の製造方法。
A method for manufacturing an organic EL display device, comprising: a support substrate on which a pixel portion made of an organic light emitting element is formed; and a translucent sealing plate that protects the pixel portion from an external atmosphere,
On the main surface of the support substrate, a thin film transistor, a reflective first electrode provided for each pixel, an insulating layer provided to cover an edge of the adjacent first electrode,
A three-layer metal material serving as an auxiliary wiring is formed along the insulating layer and sputtered thereon, and patterned to form a three-layer film composed of a lower layer film, a middle layer film, and an upper layer film having a rectangular cross section. ,
Selectively etching only the middle layer film of the three layer film exposed on the side surface of the three layer film, and retracting the edge of the middle layer film from the edge of the lower layer film and the upper layer film;
By depositing an organic light emitting layer from above the main surface of the support substrate, and subsequently sputtering a common electrode common to a plurality of pixels,
A method for manufacturing an organic EL display device, characterized in that the common electrode is connected to a lower layer film of the auxiliary wiring due to a difference in coverage between the vacuum deposition and sputtering.
請求項9において、
前記3層メタル材料は、前記下層膜と上層膜がチタン、前記中層膜がアルミニウムであり、
前記中層膜の選択的エッチングは、アルミニウムのみを溶解するウエットエッチングであることを特徴とする有機EL表示装置の製造方法。
In claim 9,
In the three-layer metal material, the lower layer film and the upper layer film are titanium, and the middle layer film is aluminum,
The method of manufacturing an organic EL display device, wherein the selective etching of the intermediate layer film is wet etching that dissolves only aluminum.
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