JP2008042143A - Group iii nitride compound semiconductor light emitting element, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a group III nitride compound semiconductor light-emitting element in which an n-type layer is formed on a conductive substrate with a highly reflective metal layer interposed therebetween, and a transparent electrode is formed on a p-type contact layer of the top layer, and to provide a method of manufacturing the same. <P>SOLUTION: The method of manufacturing a group III nitride compound semiconductor light-emitting element comprises the steps of: forming on an substrate 100 for epitaxial growth, an n-type layer 11, a p-type layer 12, a transparent electrode 121, and an insulating layer 150 in this order (1. A); forming a sacrificial layer 122 and then forming a holding substrate 200 using an adhesion layer 201 in-between (1. B); obtaining a holding substrate wafer 290 by removing the substrate 100 for epitaxial growth with laser liftoff (1. C); forming a highly reflective metal layer 111, and a solder layer etc. (metals) (1. D); joining a conductive substrate 300 (1. E); and obtaining a conductive substrate wafer 390 by removing the sacrificial layer 122 with wet-etching (1. F). <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a group III nitride compound semiconductor light emitting device.

  As a light emitting element that emits green, blue or ultraviolet light, it has been a long time since a group III nitride compound semiconductor light emitting element appeared, but it is still mainstream to epitaxially grow the light emitting element on a dissimilar and insulating substrate such as a sapphire substrate. It is. Even when different types of conductive substrates are used, so-called dislocations during epitaxial growth cannot be sufficiently reduced, and cracks in the group III nitride compound semiconductor layer due to differences in thermal expansion coefficients after returning to room temperature after epitaxial growth. It is still a problem that generation | occurrence | production of this cannot fully be suppressed.

By the way, a substrate for epitaxial growth is different from a support substrate when used as an element, that is, a technique for transferring a group III nitride compound semiconductor layer or a group III nitride compound semiconductor element to another substrate after epitaxial growth. (Patent Documents 1 to 4, Non-Patent Document 1).
Patent 3418150 Special table 2001-501778 Special table 2005-522873 USP 6071795 Kelly et al., “Optical process for liftoff of group III-nitride films”, Physica Status Solidi (a) vol. 159, 1997, R3-R4

  There was no Group III nitride compound semiconductor light-emitting device in which an n-type layer was provided on a conductive substrate via a highly reflective metal layer and a translucent electrode was provided on the uppermost p-type layer.

  The present inventors diligently studied and completed a method for easily obtaining a group III nitride compound semiconductor light-emitting device having the above structure. That is, an object of the present invention is to provide a group III nitride compound semiconductor in which an n-type layer is provided on a conductive substrate via a highly reflective metal layer and a translucent electrode is provided on the uppermost p-type layer. It is to provide a light emitting device.

  The invention according to claim 1 includes a conductive substrate, a highly reflective metal layer, an n-type group III nitride compound semiconductor layer, a p-type group III nitride compound semiconductor layer, and a translucent electrode. And a light emitting element that emits light by passing a current from the light-transmitting electrode to the conductive substrate. is there.

  According to a second aspect of the present invention, in the method for manufacturing a group III nitride compound semiconductor light emitting device, an epitaxial growth substrate includes at least an n-type group III nitride compound semiconductor layer and an uppermost p-type III compound semiconductor layer. Epitaxial growth process for forming desired laminated structure up to group nitride compound semiconductor layer, and translucent electrode formation for forming translucent electrode on upper surface of p-type group III nitride compound semiconductor layer as uppermost layer A holding substrate adhering step for adhering a holding substrate for temporary holding to the translucent electrode side with an adhesive layer mainly made of an organic material, and an n-type group III nitride compound semiconductor layer, A laser irradiation step of irradiating the vicinity of the interface with the epitaxial growth substrate to decompose the vicinity of the interface, a growth substrate removing step excluding the epitaxial growth substrate, an exposed n-type I A reflective metal forming step of forming a highly reflective metal layer on the back surface of the group II nitride compound semiconductor layer, and a conductor on the back surface side of the n-type group III nitride compound semiconductor layer covered with the highly reflective metal layer. A group III nitriding comprising at least a conductive substrate bonding step for bonding a conductive substrate having a connection layer formed on a surface thereof, and a holding substrate removing step for removing the holding substrate and an adhesive layer made of an organic material This is a method for manufacturing a physical compound semiconductor light emitting device.

  According to the third aspect of the present invention, in the holding substrate bonding step, the holding substrate is bonded to the translucent electrode side with an adhesive layer made of an organic material through a sacrificial layer made of metal. Is characterized in that after the sacrificial layer made of metal is decomposed or removed, the holding substrate and the adhesive layer made of an organic material are removed. The invention according to claim 4 includes a step of patterning the translucent electrode and a step of providing a wet etching resistant layer covering the translucent electrode after patterning after the translucent electrode forming step. Features. In the invention according to claim 5, following the holding substrate removing step, the stacked structure formed on the conductive substrate is changed from the p-type group III nitride compound semiconductor layer side of the uppermost layer to the n-type group III. From the first dicing blade, a half-cut step of forming a first groove for separation with a first dicing blade so as to reach the nitride-based compound semiconductor layer and not reach the highly reflective metal layer; And a full-cut step of forming a second groove for separation reaching the conductive substrate by the second dicing blade having a small thickness.

  As shown below, a Group III nitride compound semiconductor light-emitting device having a structure in which an n-type layer is provided on a conductive substrate via a highly reflective metal layer and the uppermost p-type layer is covered with a translucent electrode It can be made to emit light by flowing current from the translucent electrode to the conductive substrate. This light-emitting element is a so-called face-up type and has a highly reflective metal layer under the n-type layer, so that light can be efficiently extracted from the translucent electrode side.

  The main part of the present invention is to remove the epitaxial growth substrate after bonding to the holding substrate. In addition, two dicing blades having different thicknesses are used, and a wide groove is formed between the two elements where separation lines are desired with the thick first dicing blade, and then the thin second dicing blade is used. It is to prevent the metal piece when cutting the metal layer or the like from short-circuiting the p-type layer and the n-type layer of these two elements. As a method for removing the holding substrate, an adhesive layer mainly made of an organic material that can be removed by a solvent or the like is preferably used. Furthermore, by using a sacrificial layer made of a metal that can be wet etched, the holding substrate can be easily removed.

  In this way, a group III nitride compound semiconductor light-emitting device having a structure in which an n-type layer is provided on a conductive substrate via a highly reflective metal layer and the uppermost p-type layer is covered with a translucent electrode can be easily obtained. A pn short circuit at the outer periphery of the element during formation and separation can be avoided.

  In addition, since the holding substrate and the epitaxial layer which is the main part of the light emitting element have an adhesive layer made of an organic material between them, the stress is relieved. Therefore, it is possible to absorb the stress due to the generation of local nitrogen gas and the stress due to local thermal expansion that occur when the epitaxial growth substrate is removed by laser lift-off, thereby avoiding the destruction of the element structure.

  In the present invention, a stacked structure of a light emitting layer and other semiconductors is arbitrary as long as it is a so-called face-up type in which light is extracted to the p layer side. That is, the present invention can be applied to a group III nitride compound semiconductor light emitting device having an arbitrary laminated structure of face-up type.

  For example, when the thin film portion of GaN is melted and decomposed by laser irradiation and separated from the epitaxial growth substrate, a laser having a wavelength shorter than 365 nm is suitable, a YAG laser having a wavelength of 365 nm, 266 nm, a XeCl laser having a wavelength of 308 nm, and a wavelength of 155 nm. ArF laser, KrF having a wavelength of 248 nm is preferably used. For example, if the chips are arranged on the wafer every 500 μm, 4 × 4 2 mm square laser irradiations or 6 × 6 3 mm square laser irradiations are used. Then, it is preferable that the boundary between “laser irradiated” and “unirradiated” does not cross each chip. When AlGaN other than GaN is used as the buffer layer, for example, the laser may be irradiated on the interface between GaN and AlGaN, and the substrate for epitaxial growth together with the buffer layer may be removed by lift-off. The substrate for epitaxial growth can be arbitrarily selected as long as laser lift-off can be applied and a group III nitride compound semiconductor can be epitaxially grown.

  The group III nitride compound semiconductor multilayer structure is desirably formed by epitaxial growth. However, the buffer layer formed prior to the epitaxial growth may be formed by, for example, sputtering or other methods without depending on the epitaxial growth. The epitaxial growth method, the substrate for epitaxial growth, the configuration of each layer, the structure of the functional layer such as the light emitting layer, the other configuration method, the handling method after element division, etc. may not be described in detail in the following examples, Use of any known configuration at the time of filing of the present application or formation of a desired optical element by arbitrarily combining a plurality of technical configurations means that the present invention can be included.

  Group III nitride compounds, in a narrow sense, include quaternary semiconductors including arbitrary and binary AlGaInN compositions, and donor or acceptor impurities for imparting conductivity to them. Means something. However, in general, it does not exclude a semiconductor that uses another group III and group V in addition or in part, or a semiconductor to which an arbitrary element is added to provide another function.

  An arbitrary conductive material can be used for the electrode directly bonded to the group III nitride compound layer and the single-layer or multi-layer electrode connected to the electrode. As the translucent electrode provided on the p-type layer side, for example, indium tin oxide, indium titanium oxide, or other oxide electrodes can be used. As a highly reflective metal provided on the n-type layer side, iridium (Ir), platinum (Pt), rhodium (Rh), silver (Ag), aluminum (Al ) Is preferred. It is also possible to form a translucent electrode between the highly reflective metal and the n-type layer.

A sacrificial layer and / or an adhesive layer may be used when a holding substrate is bonded to an epitaxial growth wafer in which a laminated structure is provided on the epitaxial growth substrate. The holding substrate can be selected arbitrarily. However, when the sacrificial layer is etched and / or the adhesive layer is dissolved, the holding substrate is made of an easily processable material that easily forms a hole reaching the sacrificial layer and / or the adhesive layer. preferable. When a sacrificial layer is used, a metal layer that can be easily decomposed with dilute acid or the like is preferable. For example, nickel that can be wet etched with dilute hydrochloric acid can be used. In addition, an insulating layer made of, for example, silicon dioxide (SiO ₂ ) can be used as the wet etching resistant layer so that the translucent electrode and the group III nitride compound semiconductor layer are not corroded during the wet etching of the sacrificial layer. . The wet etching resistant layer can be selected as desired according to the selection of the sacrificial layer and the etchant. Note that in the case where the light-emitting element is finally left as an insulating layer, it needs to be light-transmitting.

  The adhesive layer made of an adhesive is preferably one that can be easily removed and washed with an organic solvent or the like. As such an adhesive, for example, an acrylic resin adhesive can be used.

 Solder can be suitably used to join the holding substrate wafer and the conductive substrate provided with a laminated structure on the holding substrate. That is, the bonding surface connects the conductive substrate and the n-type layer of the light emitting element, and is required to have conductivity. Depending on the solder component, a multilayer metal film may be formed on the bonding side surface (surface of the highly reflective metal layer provided on the n-type layer) of the conductive substrate or holding substrate wafer as necessary.

First, the outline of the present invention will be described with reference to FIG. FIG. A to FIG. F is a process drawing (cross-sectional view) showing the main part of the production method of the present invention. A stacked structure including at least the n-type layer 11, the p-type layer 12, and the translucent electrode 121 is formed on the epitaxial growth substrate 100. Note that the uppermost layer is the insulating layer 150 that also serves as a wet etching resistant layer. This is called an epitaxially grown wafer 190 (FIG. 1.A). A sacrificial layer 122 is provided on the epitaxially grown wafer 190 and bonded to the holding substrate 200 using the adhesive layer 201 (FIG. 1.B). Thereafter, a laser having a predetermined wavelength is irradiated to the interface between the n-type layer 11 made of, for example, GaN and the epitaxial growth substrate 100 to decompose GaN into liquid Ga and nitrogen gas N ₂ . Thereafter, the epitaxial growth substrate 100 is removed by lift-off, and the exposed surface of the n-type layer 11 is washed to obtain a holding substrate wafer 290 having a laminated structure from the holding substrate 200 to the n-type layer 11 (FIG. 1C).

  Upside down for convenience of illustration. As in D, a highly reflective metal layer 111 is formed on the n-type layer 11 of the holding substrate wafer 290, and a metal layer for bonding (metals in the figure) including a solder layer and the like is further formed. Here, a conductive substrate 300 made of a metal or a low-resistance semiconductor or the like is bonded (FIG. 1.E). As will be described later, if the holding substrate 200 is easily processed, the sacrificial layer 122 can be easily etched. Thus, if the sacrificial layer 122 is removed by wet etching, a conductive substrate wafer 390 having a laminated structure formed on the conductive substrate 300 is obtained (FIG. 1.F). A hole is formed in a desired position of the insulating layer 150 to expose the translucent electrode 121 to form a desired positive electrode, and then separated into individual elements to form a highly reflective metal layer on the conductive substrate 300. 111, an n-type layer 11, a p-type layer 12, and a translucent electrode 121 in this order, and a Group III nitride compound semiconductor light emitting that emits light by passing a current from the translucent electrode 121 electrode to the conductive substrate 300 An element is obtained.

  FIG. A to FIG. P is a process diagram (cross-sectional view) showing a more detailed manufacturing method of the group III nitride compound semiconductor light emitting device 1000 according to a specific example of the present invention. FIG. P shows a diagram substantially corresponding to a two-chip group III nitride compound semiconductor light emitting device 1000. FIG. A to FIG. P is an enlarged representation of a “part” of a single wafer or the like.

  First, a sapphire substrate 100 is prepared, and a group III nitride compound semiconductor layer is formed by normal epitaxial growth (FIG. 2.A). FIG. In A, a group III nitride compound semiconductor layer stacked as an n-type layer 11, a p-type layer 12, and a light emitting region L is shown in a simplified manner. FIG. A to FIG. In P, the n-type layer 11 and the p-type layer 12 are described as two layers that are in contact with each other in the light emitting region L indicated by a broken line.

Actually, even if the sapphire substrate 100 includes, for example, a buffer layer, a high concentration n ⁺ layer made of GaN doped with silicon, a low concentration n layer made of GaN, and an n-AlGaN cladding layer, FIG. A to FIG. P is represented as an n-type layer 11. Similarly, even if a p-AlGaN cladding layer doped with magnesium, a low-concentration p layer made of GaN, and a high-concentration p ⁺ layer made of GaN are formed, FIG. A to FIG. In P, the p-type layer 12 is represented. The light emitting region L is represented by a broken line representing both the junction surface in the case of a pn junction and a light emitting layer having a multiple quantum well structure (usually, the well layer is an undoped layer). It does not mean the “interface between the mold layer 11 and the p-type layer 12”. However, the “plane of the light emitting region” is a plane existing in the vicinity of the broken line indicated by the light emitting region L. Note that the p-type layer 12 is “a layer containing a p-type impurity but not reduced in resistance” before the “heat treatment under nitrogen (N ₂ ) atmosphere” described below, and the “nitrogen ( After the “N ₂ ) heat treatment under atmosphere”, it is a p-type layer with a low resistance in the usual sense.

Next, a translucent electrode 121 made of indium tin oxide (ITO) having a thickness of 300 nm is formed on the entire surface of the p-type layer 12 by electron beam evaporation. The ITO electrode 121 is indicated as “121-ITO” in each drawing. Next, the ITO electrode 121 is patterned (FIG. 2.B). Thereafter, heat treatment is performed at 700 ° C. for 5 minutes in an N ₂ atmosphere to reduce the resistance of the p-type layer 12 and to reduce the contact resistance between the p-type layer 12 and the ITO electrode 121 (FIG. 2.C). Next, an insulating layer 150 made of silicon dioxide (SiO ₂ ) having a thickness of 100 nm is formed on the entire surface of the ITO electrode 121 (FIG. 2.D).

  Next, a Ni layer 122 having a thickness of 500 nm is formed on the upper surface of the insulating layer 150 as a wet etching soluble layer serving as a sacrificial layer (FIG. 2.E). Here, a Si substrate 200 as a dummy substrate (temporary holding substrate) is bonded with an adhesive 201. The adhesive 201 is preferably a solvent-soluble type, and an acrylic adhesive that is soluble in methyl ethyl ketone or the like is preferably used (FIG. 2.F).

Thereafter, the sapphire substrate 100 is removed by a known laser lift-off, and the n-type layer 11 side is placed on the Si substrate 200 as a dummy substrate (temporary holding substrate) (FIG. 2.G). In the laser lift-off, the interface 11f of the n-type layer 11 with the sapphire substrate 100 is focused and laser irradiation is performed, the bonding at the interface 11f is decomposed, and the sapphire substrate 100 is peeled off and removed. For example, the irradiation conditions are 0.7 J / cm ² or more, a pulse width of 25 ns (nanoseconds), an irradiation area of 2 mm square or 3 mm square, and the outer periphery of the laser irradiation area does not cross “one chip” for each irradiation. It is good to make it. By this laser irradiation, the interface 11f of the n-type layer 11 (GaN layer) closest to the sapphire substrate 100 is melted into a thin film and decomposed into gallium (Ga) droplets and nitrogen (N ₂ ). Thereafter, the exposed surface of the n layer 11 is washed with dilute hydrochloric acid (aqHCl) and hydrofluoric acid buffer (BHF) to remove gallium (Ga) droplets adhering to the surface.

  Next, a highly reflective metal layer 111 made of aluminum (Al) having a thickness of 500 nm is formed on the exposed surface of the n layer 11 by vapor deposition. A highly reflective metal layer 111 made of aluminum (Al) is formed as shown in FIG. Below H, it is shown as “111-Al”. Further, a titanium (Ti) layer 112 having a thickness of 100 nm, a nickel (Ni) layer 113 having a thickness of 300 nm, and a gold (Au) layer 114 having a thickness of 100 nm are laminated thereon in order, and a gold-tin solder (Au −20Sn) 115 was provided with a thickness of 1000 nm (FIG. 2.H).

  The functions of the titanium (Ti) layer 112, the nickel (Ni) layer 113, and the gold (Au) layer 114 are as follows. In providing the gold tin solder (Au-20Sn) 115 of 20% tin, a gold (Au) layer 114 is formed as an alloying layer with the gold tin solder (Au-20Sn) 115, and aluminum (Al) of tin (Sn). In order to improve the adhesion between the nickel (Ni) layer 113 and the highly reflective metal layer 111 made of aluminum (Al) as a layer for preventing diffusion to the highly reflective metal layer 111 made of Each is provided with a titanium (Ti) layer 112.

Next, a copper (Cu) substrate 300 is prepared, an Au layer 301 is formed on the front surface, an Au layer 302 is formed on the back surface, and a gold tin solder (Au-20Sn) 305 of 20% tin is thick on the Au layer 301 on the front surface side. A thickness of 1000 nm is formed. Thus, a 20% gold tin solder (Au-20Sn) 305 on the surface side of the copper (Cu) substrate 300 and a 20% tin gold tin solder on the wafer of the Si substrate 200 as a dummy substrate (temporary holding substrate) ( (Au-20Sn) 115 is bonded by hot pressing (FIG. 2.I). The conditions at this time are, for example, 300 ° C. and 30 kg weight / cm ² (2.94 MPa). Thus, a structure in which the copper (Cu) substrate 300, the highly reflective metal layer 111 made of aluminum (Al), and other metal layers, the n-type layer 11, the p-type layer 12, and the ITO electrode 121 are laminated. It is obtained in a state where it covers the Si substrate 200 which is a dummy substrate (temporary holding substrate).

  Next, a plurality of holes H are formed in the Si substrate 200 and the adhesive layer 201 so that the etching solution sufficiently reaches the Ni layer 122 which is a sacrificial layer (FIG. 2.J). For example, the holes H may be formed in a trench shape, or in a lattice shape as a whole, and may be formed so as to cut the Si substrate 200 and the adhesive layer 201 or not. .

  In this way, the etching solution is sufficiently applied to the sacrificial Ni layer 122 from the plurality of holes H to dissolve the Ni layer 122, and the Si substrate 200 and the adhesive layer 201 are bonded to the copper (Cu) substrate 300 and aluminum ( The highly reflective metal layer 111 made of Al) and other metal layers, the n-type layer 11, the p-type layer 12, and the ITO electrode 121 are removed from the laminated structure (FIG. 2.K). Note that dilute nitric acid was used as the etching solution.

Next, a part of the surface of the SiO ₂ layer 150 is etched to expose a necessary portion of the ITO electrode 121 (FIG. 2.L), and a pedestal electrode 125 made of a desired metal or the like is formed by lift-off using a resist film. (FIG. 2.M).

  As described above, since the configuration of each light emitting element is completed, it is separated into individual elements. First, a first trench T1 having a width of 50 μm is formed by a first dicing blade from the p layer 12 side to the center of the thickness of the n layer 11 along the separation line between the elements. At this time, if the metal layer below the highly reflective metal layer 111 made of aluminum (Al) is diced, the metal piece short-circuits the n-type layer 11 and the p-type layer 12 of each element. Must not exceed the thickness of the n layer 11 (FIG. 2.N).

  Next, the second groove T2 having a width of 20 μm is aligned with the first groove T1 formed along the separation line between the elements until the copper (Cu) substrate 300 and the Au layer 302 on the back surface are completely separated. 2 dicing blades. For the convenience of the element isolation process, for example, the second groove T2 formed in a lattice shape may be formed so as to leave a part of the lower portion of the copper (Cu) substrate 300, and then a breaking process may be provided. To illustrate this situation, FIG. In O, the second groove T2 is shown as a state in which the copper (Cu) substrate 300 is not completely separated as a solid line, and the copper (Cu) substrate 300 and the Au layer 302 on the back surface are completely separated by a broken line. showed that.

Thus, a group III nitride compound semiconductor light emitting device 1000 according to a specific example of the present invention is obtained (FIG. 2.P). The group III nitride compound semiconductor light emitting device 1000 is provided on a copper (Cu) substrate 300, has a highly reflective metal layer 111 made of aluminum below the n-type layer 11, and ITO above the p-type layer 12. An electrode 121 is included. Since the pedestal electrode 125 does not cover the entire ITO electrode 121 and the insulating layer 150 made of SiO ₂ is translucent, the light emitted from the light emitting region L is upward at least in a portion where the pedestal electrode 125 is not provided. Will be emitted.

  An outline of the case where the sacrificial layer 122, which is another embodiment of the present invention, is omitted is shown in FIG. FIG. A to FIG. F is a process drawing (cross-sectional view) showing the main part of the second production method of the present invention. An epitaxial growth wafer 190 having a structure in which a laminated structure having at least an n-type layer 11, a p-type layer 12, and a translucent electrode 121 is formed on an epitaxial growth substrate 100, and an insulating layer 150 serving also as a wet etching resistant layer is provided as the uppermost layer. Is prepared (same as FIG. 3.A, FIG. 1.A). Next, the formation of the sacrificial layer 122 is omitted, and the epitaxial wafer 190 and the holding substrate 200 are bonded using the adhesive layer 201 (FIG. 3.B). Thereafter, the epitaxial growth substrate 100 is removed by laser lift-off, and the exposed surface of the n-type layer 11 is washed to obtain a holding substrate wafer 295 having a laminated structure from the holding substrate 200 to the n-type layer 11 (FIG. 3.C). ).

  FIG. As in D, a metal layer (metals in the figure) for bonding composed of the highly reflective metal layer 111, the solder layer, and the like is formed on the n-type layer 11 of the holding substrate wafer 295. Here, a conductive substrate 300 made of a metal or a low-resistance semiconductor or the like is bonded (FIG. 3.E). Thereafter, if the holding substrate wafer 295 to which the conductive substrate 300 is bonded is immersed in a predetermined organic solvent, the adhesive layer 201 made of an organic material can be swollen and peeled, dissolved, or decomposed. At this time, it is not necessary to make a hole in the holding substrate 200. In this way, a conductive substrate wafer 390 having a laminated structure formed on the conductive substrate 300 is obtained (same as FIG. 3.F and FIG. 1.F). A hole is formed in a desired position of the insulating layer 150 to expose the translucent electrode 121 to form a desired positive electrode, and then separated into individual elements to form a highly reflective metal layer on the conductive substrate 300. 111, an n-type layer 11, a p-type layer 12, and a translucent electrode 121 in this order, and a Group III nitride compound semiconductor light emitting that emits light by passing a current from the translucent electrode 121 electrode to the conductive substrate 300 An element is obtained.

Process drawing (sectional drawing) which shows the outline | summary of the manufacturing method of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Sectional drawing which shows 1 process of the manufacturing method of the group III nitride compound semiconductor light-emitting device 1000 which concerns on one specific Example of this invention. Process drawing (sectional drawing) which shows the outline | summary of the 2nd manufacturing method of this invention.

Explanation of symbols

1000: Group III nitride compound semiconductor light emitting device L: Light emitting region 100: Sapphire substrate (substrate for epitaxial growth)
11: n-type group III nitride compound semiconductor layer 111: highly reflective metal layer made of Al 112: Ti layer 113: Ni layer 114, 301, 302: Au layer 115, 305: Au-20Sn solder layer 12: p Type III nitride compound semiconductor layer 121: Translucent electrode made of ITO 122: Sacrificial layer made of Ni 125: Base electrode 150: Insulating layer made of SiO ₂ 200: Silicon substrate (holding substrate)
201: Adhesive layer made of an organic material H: Hole for wet etching 300: Cu substrate T1, T2: Groove formed by first and second dicing blades

Claims (5)

A conductive substrate;
A highly reflective metal layer;
an n-type Group III nitride compound semiconductor layer;
a p-type group III nitride compound semiconductor layer;
A translucent electrode,
Have each layer in this order with or without other layers,
A Group III nitride compound semiconductor light-emitting element that emits light by passing a current from the translucent electrode to the conductive substrate. In the method for producing a group III nitride compound semiconductor light emitting device,
An epitaxial growth step of forming a desired stacked structure of at least an n-type group III nitride compound semiconductor layer and an uppermost p-type group III nitride compound semiconductor layer on an epitaxial growth substrate;
A translucent electrode forming step of forming a translucent electrode on the upper surface of the p-type group III nitride compound semiconductor layer which is the uppermost layer;
A holding substrate bonding step in which a holding substrate for temporary holding is bonded to the translucent electrode side by an adhesive layer made mainly of an organic material;
A laser irradiation step of irradiating the vicinity of the interface with the epitaxial growth substrate of the n-type group III nitride compound semiconductor layer to decompose the vicinity of the interface;
Thereafter, a growth substrate removing step excluding the epitaxial growth substrate,
A reflective metal forming step of forming a highly reflective metal layer on the back surface of the exposed n-type group III nitride compound semiconductor layer;
A conductive substrate bonding step of bonding a conductive substrate having a connection layer formed by a conductor on the back side of the n-type group III nitride compound semiconductor layer covered with the highly reflective metal layer;
A method of manufacturing a group III nitride compound semiconductor light emitting device, comprising at least a holding substrate removing step of removing the holding substrate and the adhesive layer made of the organic material. In the holding substrate bonding step, the holding substrate is bonded to the translucent electrode side by an adhesive layer made of the organic material through a sacrificial layer made of metal,
3. The III according to claim 2, wherein in the holding substrate removing step, the holding substrate and the adhesive layer made of the organic material are removed after the sacrificial layer made of the metal is decomposed or removed. A method for manufacturing a group nitride compound semiconductor light emitting device. After the translucent electrode forming step,
Patterning the translucent electrode;
A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 3, further comprising a step of providing a wet etching-resistant layer that covers the translucent electrode after patterning. Following the holding substrate removal step,
The stacked structure formed on the conductive substrate reaches the n-type group III nitride compound semiconductor layer from the p-type group III nitride compound semiconductor layer side of the uppermost layer, and is highly reflective. A half-cut step of forming a first groove for separation by a first dicing blade so as not to reach the conductive metal layer;
3. A full-cut step of forming a second groove for separation reaching the conductive substrate by a second dicing blade having a thickness smaller than that of the first dicing blade. The manufacturing method of the group III nitride compound semiconductor light-emitting device of any one of Claim 4.

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