JP2008034874A - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Abstract

The long-term reliability of a semiconductor light-emitting device is improved and the manufacturing cost is reduced.
An Ni thin film layer having a thickness of 2 μm or more and 6 μm or less is formed by plating on a heat sink 1 made of Cu or CuW having a low thermal resistance. Thereafter, Ti that does not react directly with copper by vapor deposition and sputter deposition on the surface to which the semiconductor light emitting element 5 is bonded and the surface on which light is emitted are formed in a region four times the area of the bonding surface of the semiconductor light emitting element 5. Alternatively, the NiTi barrier metal layer 2 and the metal layer 3 for improving wettability for improving the wettability with the solder material are continuously formed in the same vacuum at a thickness of 50 nm to 150 nm. Do the membrane.
Here, a semiconductor light emitting device 5 in which an AlGaAs layer, a GaAs layer, a GaAsP layer, and an InGaAs layer are sequentially laminated on a GaAs substrate to form an N electrode and a P electrode is formed on the bonding surface of the heat sink 1 from 10 g. The In brazing material 4 is melted with heat of about 200 ° C. to 250 ° C. while being pressed with a load of 30 g, and then cooled and fixed.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device in which a semiconductor light emitting element is bonded to a heat sink in which metal layers are laminated.

  Conventionally, when bonding a semiconductor light emitting device such as a semiconductor laser to a heat sink, it is particularly important to reduce the thermal resistance and to reduce distortion. For this purpose, a heat sink made of a material having a relatively low thermal resistance is important. The bonding surface had to be flat so that the semiconductor light emitting device could be uniformly bonded thereon.

  In addition, since the heat sink is mainly made of a copper-based member, it is oxidized when left in the atmosphere for a long period of time, and electrical resistance and thermal resistance are increased, and impurities such as oxides are easily diffused into the semiconductor light emitting device. There was a problem.

  For this reason, immediately after forming the non-oxidized layer surface by surface treatment such as polishing or chemical etching on the surface of the heat sink, a barrier metal layer such as Ni or Ti that does not directly react with copper is provided on the heat sink to suppress diffusion. On top of this, a method such as forming a thin film of Au, Pt or the like having good corrosion characteristics is employed. Further, it is necessary to form a Pt thin film layer or the like having good wettability with the In brazing material for bonding the semiconductor light emitting element and the heat sink as the uppermost layer.

  As an example satisfying the above conditions, there is one in which Ni and Pt are sequentially formed on a heat sink. However, in this structure, since the metal film is formed on the heat sink only on one surface to which the semiconductor light emitting element is bonded, the deterioration of the metal progresses from the end portion, and eventually the semiconductor light emitting element is deteriorated. Therefore, when the Ni and Pt layers are to be formed on the entire surface of the heat sink, the film formation itself is simple by plating. However, the cost of the plating solution is high with respect to Pt plating, and the productivity is not good due to the high specificity. In addition, in order to form a metal thin film on the entire surface by vapor deposition or sputtering, it is necessary to repeatedly form a film on one heat sink while changing the direction, and there is a problem that the productivity is not good and the cost is high.

  Here, after only the Ni layer is formed on the entire surface by plating, a method of partially depositing Pt by vapor deposition or sputter deposition has been adopted. However, even in this method, since a Ni film and a Pt film cannot be continuously formed, a Ni oxide film layer is formed on the surface of the Ni plating layer during the interruption of the film formation. There is a problem that heat is easily generated at the interface, the adhesion is deteriorated, and the reliability is lowered.

  Furthermore, since the Pt thin film has a higher film stress than other metal films, a thick film causes distortion at the bonding interface due to the film stress, which decreases the adhesive strength and device reliability due to the distortion.

  As described above, when bonding a semiconductor light emitting device to a package, the distortion and thermal resistance of the adhesive surface are reduced, the initial characteristics as well as the long-term reliability are improved, and the metal structure of the heat sink and the film formation process are optimized It is important to satisfy cost productivity by doing.

  In view of the circumstances described above, an object of the present invention is to provide a low-cost semiconductor light-emitting device with high long-term reliability and a manufacturing method thereof.

The semiconductor light-emitting device of the present invention is a semiconductor light-emitting device in which a semiconductor light-emitting element is bonded to an end portion on a heat sink with a light emitting surface in proximity to one side surface of the heat sink.
The heat sink has a Ni thin film layer on the entire surface, and a barrier metal layer and a wetting improvement layer are sequentially stacked on the Ni thin film layer on the side and the side where the semiconductor light emitting element of the heat sink is bonded. It is what.

  The barrier metal layer is preferably Ni, Ti, or a NiTi alloy.

  The wettability improving metal layer is preferably Pd, Pt or a PdPt alloy.

  The heat sink is preferably made of Cu or CuW.

  The Ni thin film layer is formed by electroless plating or electroplating using a sulfamic acid bath, and preferably has a thickness of 2 μm or more and 6 μm or less.

  The thicknesses of the barrier metal layer and the wettability improving metal layer are preferably 50 nm or more and 150 nm or less, respectively.

  The area of the metal layer is preferably equal to or larger than the area of the bonding surface of the semiconductor light emitting element.

  The flatness of the heat sink on which the Ni thin film layer is formed is preferably Rmax 6 μm or less.

Also, in the method for manufacturing a semiconductor light emitting device of the present invention, a barrier metal layer and a wettability improving layer are sequentially laminated on two adjacent heat sinks each having a Ni thin film layer on the entire surface, and then the semiconductor light emitting element is formed by 2 In a method for manufacturing a semiconductor light-emitting device, on one surface of the surfaces, the other surface and the light emitting surface of the semiconductor light-emitting element are bonded in proximity to each other.
The barrier metal layer and the wettability improving metal layer are continuously formed in the same vacuum atmosphere.

  It is desirable to form the barrier metal layer and the wettability improving metal layer by vapor deposition or sputtering.

  According to the semiconductor light emitting device of the present invention, since the heat sink having the Ni thin film formed on the entire surface is used, corrosion of the Cu member of the heat sink can be prevented, and diffusion of impurities from the heat sink to the semiconductor light emitting element can be suppressed. Can be improved. Further, by adopting a plating method for forming the Ni thin film layer, a film that can easily obtain flatness can be produced at low cost.

  In addition, by re-forming a Ni barrier layer having a thickness of 50 nm or more and 150 nm or less on the heat sink on which the Ni thin film layer is formed, impurities generated on the surface of the layer should be formed after the Ni thin film layer is formed by plating. Even if it diffuses into the Ni barrier layer, the Ni barrier layer functions as a buffer layer, so that it can be prevented from diffusing to the wettability improving metal layer and the semiconductor light emitting device, and the deterioration of the semiconductor light emitting device can be prevented. Reliability can be improved.

  Further, by setting the thickness of the Pt thin film to 50 nm or more and 150 nm or less, distortion of the adhesive interface due to film stress can be suppressed, and uniform wettability can be obtained. Thereby, reliability can be improved.

  In addition, according to the method for manufacturing a semiconductor light emitting device of the present invention, since the Ni thin film layer and the Pt thin film layer are continuously vacuum-deposited, impurities hardly adhere to the Ni surface, and these metal layers are made versatile. It can be manufactured in a certain process, and can be formed in a single batch, and process reduction and cost reduction can be realized.

  Embodiments of the present invention will be described below in detail with reference to the drawings.

  FIG. 1 is a structural diagram of a semiconductor light emitting device package according to an embodiment of the present invention.

  As shown in FIG. 1, a Ni thin film layer is formed on the entire surface of the heat sink 1 with a film thickness of 2 μm or more and 6 μm or less by plating. Thereafter, the semiconductor light-emitting element 5 is not directly reacted with copper by vapor deposition and sputter deposition on the surface to which the semiconductor light-emitting element 5 is bonded and the surface on which light is emitted, in an area that is four times the area of the bonding bottom surface of the semiconductor light-emitting element 5 The barrier metal layer 2 is formed with a film thickness of 50 nm or more and 150 nm or less. Further, a metal layer 3 for improving wettability for improving wettability with the solder material is continuously formed in the same vacuum at a film thickness of 50 nm to 150 nm.

  Here, the semiconductor light emitting device 5 is formed by sequentially laminating an AlGaAs layer, a GaAs layer, a GaAsP layer, and an InGaAs layer on a GaAs substrate, and then an N electrode made of AuGe / Ni / Au, and an Au / Pt / Ti / Pt. A P electrode made of / Ti is formed. While the semiconductor light emitting element 5 is pressed against the bonding surface of the heat sink 1 with a load of 10 g to 30 g, the In brazing material 4 is melted with heat of about 200 ° C. to 250 ° C., and then cooled and fixed.

  In addition, Cu or CuW with small heat resistance is used for a heat sink.

  Further, it is desirable to use Ni or Ti for the barrier metal layer, and it is desirable to use Pd or Pt for the wettability improving metal layer.

  FIG. 2 is a graph showing the Ni film thickness dependence of the deterioration rate when pre-aging a semiconductor light emitting device having a ridge width of 50 μm and a resonator length of 750 μm at a temperature of 50 degrees and an output of 500 mW for 100 hours. It can be seen from FIG. 2 that the deterioration rate is reduced by setting the thickness of the Ni thin film layer as the barrier metal layer to 50 nm or more and 150 nm or less.

  FIG. 3 shows a graph of Pt film thickness dependence when pre-aging is performed under the same conditions as those shown in FIG. It can be seen from FIG. 3 that the deterioration rate is reduced by setting the thickness of the Pt thin film layer, which is a wettability improving metal layer, to 50 nm or more and 150 nm or less.

  Therefore, according to the semiconductor light emitting device package manufactured as described above, since the Ni thin film is formed on the entire surface of the heat sink by plating, corrosion of the Cu member is prevented, and diffusion of impurities from the heat sink to the semiconductor light emitting device is prevented. A film that can be suppressed and can obtain flatness can be manufactured easily and inexpensively.

  In addition, by forming the Ni barrier layer again on the heat sink on which the Ni thin film is formed, even if impurities such as residues when the Ni thin film layer is formed by plating diffuse into the Ni barrier layer, When the Ni barrier layer functions as a buffer layer, diffusion to the wetting improving metal layer and the semiconductor light emitting device can be suppressed, deterioration of the semiconductor light emitting device can be prevented, and reliability can be improved.

  Further, by performing the Ni thin film layer and the Pt thin film layer in a vacuum atmosphere, the thin film can be formed in a single batch, the number of steps can be reduced, and the cost can be reduced. Further, by continuously forming these two layers, it is possible to prevent adhesion of impurities such as moisture on the surface of the Ni thin film, and to improve reliability.

1 is an oblique view of a semiconductor light emitting device package showing a first embodiment of the present invention; The graph which shows the Ni film thickness dependence of the deterioration rate of the semiconductor light-emitting device of this invention The graph which shows the Pt film thickness dependence of the deterioration rate of the semiconductor light-emitting device of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Heat sink 2 Ni thin film layer 3 Pt thin film layer 4 In brazing material 5 Semiconductor light emitting element 6 Light emission surface

Claims (3)

In a semiconductor light-emitting device in which a semiconductor light-emitting element is bonded to an end portion on a heat sink, with a light emitting surface being brought close to one side surface of the heat sink,
The heat sink has a Ni thin film layer on the entire surface, and a surface of the heat sink to which the semiconductor light emitting element is bonded and a barrier metal layer made of Ti or NiTi alloy on the Ni thin film layer on the side surface and wetness Improvement layers are sequentially stacked,
A semiconductor light-emitting device, wherein the barrier metal layer has a thickness of 50 nm to 150 nm. 2. The semiconductor light emitting device according to claim 1, wherein the wettability improving metal layer is made of Pd, Pt or a PdPt alloy. 4. The semiconductor light emitting device according to claim 2, wherein the wettability improving metal layer has a thickness of 50 nm to 150 nm.

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