JP2008034802A - Semiconductor sealing material and semiconductor element sealed with it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor sealing material which can seal at a low temperature, has a high transmission factor and an excellent weather resistance, and is made up of a non-lead glass being difficult to react with a semiconductor; and to provide a semiconductor element sealed with it. <P>SOLUTION: The semiconductor sealing material is for sealing a semiconductor, the internal transmission factor at a thickness of 1 mm and a wavelength 588 nm is 80% or more, and is made up of an SnO-P<SB>2</SB>O<SB>5</SB>-B<SB>2</SB>O<SB>3</SB>of a softening poit 400°C or lower. The semiconductor element is constructed in such a manner that the semiconductor is sealed with the above sealing material. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor sealing material for sealing a semiconductor, in particular, a semiconductor that emits light in the visible range, and a semiconductor element that is sealed using the sealing material.

A semiconductor element such as a light-emitting device is manufactured by sealing each component such as a semiconductor (light-emitting chip), metal, ceramic, or the like. In addition to being able to be firmly bonded and sealed at a low temperature, the material used for sealing is required not to reduce the amount of light emitted from the semiconductor, to have weather resistance, etc., so the softening point is low and high. Lead-based glass having transmittance and weather resistance is used. However, in recent years, from the viewpoint of the environment, it is also required not to contain environmentally hazardous substances such as lead. Therefore, as shown in Patent Document 1, a sealing material made of non-lead glass having a low softening point is used. Has been proposed.
JP 2005-11933 A

  The sealing material disclosed in Patent Document 1 can be sealed at a low temperature, but generally, the lower the softening point of the glass, the lower the weather resistance of the glass. If the product is used for a long period of time under the environment, moisture will penetrate into the sealing material and the sealing material may be altered to deteriorate the optical characteristics of the semiconductor element or to deteriorate the semiconductor itself. There was a problem of obstructing operation. In addition, when a semiconductor is sealed, the glass and the semiconductor react to reduce the transmittance of the glass, which is a sealing material, and the amount of light emitted from the semiconductor may be adversely affected. There was sex.

  An object of the present invention is to provide a semiconductor sealing material made of lead-free glass that can be sealed at low temperature, has high transmittance and excellent weather resistance, and hardly reacts with a semiconductor, and sealing using the same. It is to provide a semiconductor device formed by stopping.

The semiconductor sealing material of the present invention is a sealing material for sealing a semiconductor, has a thickness of 1 mm, a transmittance at a wavelength of 588 nm is 80% or more, and has a softening point of 400 ° C. or lower. characterized by comprising the -P ₂ O ₅ -B ₂ O ₃ based glass.

  In addition, the semiconductor element of the present invention is characterized by sealing a semiconductor using the above-described sealing material.

  According to the present invention, since the lead-free glass having a low softening point, high transmittance, excellent weather resistance, and hardly reacting with a semiconductor is used, the semiconductor is deteriorated at a low temperature. It can seal without. The obtained semiconductor element has excellent weather resistance, little deterioration even when used for a long period of time, and excellent optical characteristics. Therefore, it is suitable as a sealing material and a semiconductor element for sealing a semiconductor, particularly a semiconductor that emits light in the visible range.

  The semiconductor sealing material of the present invention is made of glass having an internal transmittance of 80% or more at a thickness of 1 mm and a wavelength of 588 nm. By setting the internal transmittance of the glass to 80% or more, the loss of the amount of light emitted from the semiconductor can be reduced, and a semiconductor element having excellent optical characteristics can be obtained. When the internal transmittance of the glass is lower than 80%, the loss of the light amount emitted from the semiconductor is increased, and the optical characteristics of the semiconductor element are likely to be deteriorated. A preferable range of the internal transmittance of the glass is 92% or more, and more preferably 93% or more.

  Moreover, the glass which has a softening point of 400 degrees C or less is used. By setting the softening point to 400 ° C. or lower, it becomes possible to seal the semiconductor at a low temperature and suppress deterioration of the semiconductor. When the softening point exceeds 400 ° C., the light emission characteristics of the semiconductor deteriorate, the light emission wavelength tends to change, and the semiconductor tends to deteriorate. A more preferable range of the softening point is 380 ° C. or lower, and more preferably 360 ° C. or lower.

Furthermore, the relatively easily high transmittance and low softening point easily obtained _SnO-P 2 _{O 5} based _glass, a _{SnO-P 2 O 5 -B 2} O 3 system glass containing B 2 _{O 3} principal components It is said. In general, SnO—P ₂ O ₅ glass, which is a low-melting glass, has low weather resistance, and the sealing material may be altered during use to reduce the optical characteristics of the semiconductor element or to deteriorate the semiconductor. There is. In addition, when a semiconductor is sealed, the glass and the semiconductor may react to reduce the transmittance of the glass, which is a sealing material, or the amount of light emitted from the semiconductor may decrease, adversely affecting the characteristics of the semiconductor element. However, in the present invention, B ₂ O ₃ which is a component for suppressing the reaction with the semiconductor and improving the weather resistance is contained. Therefore, even a sealing material made of lead-free glass having a low softening point has little reaction with a semiconductor and can have excellent weather resistance.

  In order to further reduce the loss of the amount of light emitted from the semiconductor, it is preferable to use glass having a refractive index (nd) of 1.5 to 2.2. When the refractive index of the glass decreases, the reflection loss of light at the interface between the sealing material and the semiconductor increases, and as a result, the loss of the amount of light emitted from the semiconductor increases. On the other hand, when the refractive index of the glass increases, the scattering loss inside the sealing material increases, and as a result, the loss of the amount of light emitted from the semiconductor increases. A more preferable range of the refractive index of the glass is 1.6 to 2.15, and more preferably 1.7 to 2.1.

In addition, in the SnO—P ₂ O ₅ —B ₂ O ₃ -based glass, it is preferable to contain 1 mol% or more of B ₂ O ₃ in order to suppress the reaction with the semiconductor and improve the weather resistance. However, when the content of B ₂ O ₃ increases, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. On the other hand, since it reacts with the semiconductor and the weather resistance tends to be lowered, it is preferably 30 mol% or less. A more preferable range of B ₂ O ₃ is 2 to 20%, more preferably 4 to 20%, and most preferably 5 to 18%.

Furthermore, a molar ratio values of SnO _/ P 2 _{O 5,} is preferably in the range of 0.9 to 16. When the value of SnO / P ₂ O ₅ is smaller than 0.9, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. Further, the weather resistance tends to be remarkably lowered. On the other hand, when the value of SnO / P ₂ O ₅ is larger than 16, devitrification bumps due to Sn are precipitated in the glass, and the transmittance of the glass tends to be lowered. As a result, a semiconductor having excellent optical characteristics It becomes difficult to obtain an element. A more preferred range of SnO _/ P 2 _{O 5} is 1.5 to 16, more preferably 1.5 to 10, most preferably 2-5.

The SnO—P ₂ O ₅ —B ₂ O ₃ glass in the present invention has an internal transmittance of 80% or more at a thickness of 1 mm and a wavelength of 588 nm, and a softening point of 400 ° C. or less, and reacts with a semiconductor. As long as it is difficult and has excellent weather resistance, there is no limitation, but in particular, in terms of mole percentage, SnO 35-80%, P ₂ O ₅ 5-40%, B ₂ O ₃ 1-30%, _{al 2 O 3 0~10%, SiO} 2 0~10%, Li 2 O 0~10%, Na 2 O 0~10%, K 2 O 0~10%, Li 2 O + Na 2 O + K 2 O 0~10 %, MgO 0-10%, CaO 0-10%, SrO 0-10%, BaO 0-10%, MgO + CaO + SrO + BaO 0-10%, and SnO / P ₂ O ₅ is 0.9-16 Is preferably used.

  The reason for limiting the glass composition as described above in the present invention is as follows.

  SnO is a component that forms a glass skeleton and lowers the softening point. Its content is 35-80%. When the content of SnO decreases, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. On the other hand, when the content is increased, devitrification bumps due to Sn are precipitated in the glass, and the transmittance of the glass tends to be lowered. As a result, it is difficult to obtain a semiconductor element having excellent optical characteristics. Moreover, it becomes difficult to vitrify. A more preferable range of SnO is 40 to 70%, more preferably 50 to 70%, and most preferably 55 to 65%.

P ₂ O ₅ is a component that forms a glass skeleton. Its content is 5-40%. When the content of P ₂ O ₅ decreases, vitrification becomes difficult. On the other hand, when the content increases, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. Further, the weather resistance tends to be remarkably lowered. A more preferable range of P ₂ O ₅ is 10 to 30%, and further preferably 15 to 24%.

In order to lower the softening point and stabilize the glass, it is preferable to set the value of SnO / P ₂ O ₅ in the range of 0.9 to 16 in terms of molar ratio. When the value of SnO / P ₂ O ₅ is smaller than 0.9, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. Further, the weather resistance tends to be remarkably lowered. On the other hand, when the value of SnO / P ₂ O ₅ is larger than 16, devitrification bumps due to Sn are precipitated in the glass, and the transmittance of the glass tends to be lowered. As a result, a semiconductor having excellent optical characteristics It becomes difficult to obtain an element. A more preferred range of SnO _/ P 2 _{O 5} is 1.5 to 16, more preferably 1.5 to 10, most preferably 2-5.

B ₂ O ₃ is a component that suppresses the reaction with the semiconductor and improves the weather resistance. It is also a component that stabilizes the glass. Its content is 1-30%. When the content of B ₂ O ₃ decreases, the above effect is difficult to obtain. On the other hand, when the content is increased, on the other hand, it reacts with the semiconductor and the weather resistance tends to decrease. In addition, the softening point of the glass tends to increase, making it difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. A more preferable range of B ₂ O ₃ is 2 to 20%, and further preferably 4 to 18%.

Al ₂ O ₃ is a component that stabilizes the glass. Its content is 0-10%. When the content of Al ₂ O ₃ increases, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. A more preferable range of Al ₂ O ₃ is 0 to 7%, and further preferably 1 to 5%.

SiO ₂ is a component that stabilizes the glass in the same manner as Al ₂ O ₃ . Its content is 0-10%. When the content of SiO ₂ increases, the softening point of the glass tends to increase, and it becomes difficult to seal the semiconductor at a low temperature, and the semiconductor is likely to deteriorate. Moreover, it becomes easy to phase-separate glass. A more preferable range of SiO ₂ is 0 to 7%, and further preferably 0 to 5%.

Li ₂ O, Na ₂ O and K ₂ O are components that lower the softening point of the glass. Their contents are each 0 to 10%. When the content of these components is increased, the glass is likely to become extremely unstable and difficult to vitrify. A more preferable range of these components is 0 to 7%, and more preferably 0 to 5%.

_{Incidentally,} Li 2 O, it is preferable that the Na ₂ O and _{K 2} O 0 to 10% in the total amount. If the total amount of these components exceeds 10%, the glass tends to be unstable and difficult to vitrify. A more preferred range of _{Li 2 O + Na 2 O +} K 2 O is 0-7%, more preferably 1 to 5%.

  MgO, CaO, SrO, and BaO are components that stabilize glass and facilitate vitrification. Its content is 0-10%. When the content of these components increases, the glass tends to be devitrified, and the transmittance of the glass tends to decrease. As a result, it becomes difficult to obtain a semiconductor element having excellent optical characteristics. A more preferable range of these components is 0 to 7%, and more preferably 0 to 5%.

  In addition, it is preferable to make MgO, CaO, SrO, and BaO into 0 to 10% in total. When the total amount of these components exceeds 10%, the glass tends to be devitrified, and the transmittance of the glass tends to decrease. As a result, it becomes difficult to obtain a semiconductor element having excellent optical characteristics. A more preferable range of MgO + CaO + SrO + BaO is 0 to 7%, and more preferably 1 to 5%.

In addition to the above components, various components can be added as long as the gist of the present invention is not impaired. For example, in order to improve the weather resistance, ZnO, Ta ₂ O ₅ , TiO ₂ , Nb ₂ O ₅ , Gd ₂ O ₃ , La ₂ O ₃ may be added up to 10% in total.

The semiconductor sealing material of the present invention can be obtained by preparing a glass raw material so as to have the above composition, melting it and vitrifying it. When melting, it is important to melt so that SnO is not oxidized to SnO _2. For this purpose, a reducing agent is added to the raw material, or a neutral or reducing atmosphere (non-oxidizing atmosphere). ).

  The form of the sealing material is not particularly limited. For example, any form of a glass molded body, a glass powder, a glass powder molded body, a fired body obtained by firing the glass powder molded body, a paste, or a green sheet. It may be.

  In order to make the semiconductor sealing material of the present invention into the form of a glass molded body, it can be obtained by cutting and polishing glass obtained by melting into a desired size.

  Moreover, in order to make it into the form of glass powder, it can obtain by classifying so that it may become a desired particle size distribution by grind | pulverizing the glass obtained by fuse | melting using grinders, such as a cracking machine.

  Moreover, in order to make it into the form of a glass powder molding, after adding a resin binder to the glass powder obtained as described above up to 5% by mass as necessary, it is obtained by pressure molding with a mold. Can do.

Moreover, in order to make it into the form of a sintered body, it can obtain by baking the glass powder molded object obtained as mentioned above at about 300-400 degreeC. In addition, when baking the glass powder molding which added the resin binder, after debinding at the temperature of 250 degrees C or less, it can obtain by baking at about 300-400 degreeC. In firing, it is desirable to fire at a pressure lower than 1 atm (1.013 × 10 ⁵ Pa). By doing in this way, the porosity (ratio which the bubble which remain | survives in a baked body accounts) can be made small, and scattering of light can be decreased.

  As the resin binder, it is desirable to use a resin having a decomposition end temperature of 250 ° C. or lower, and examples thereof include nitrocellulose, polyisobutyl acrylate, and polyethyl carbonate. These can be used alone or in combination.

  Moreover, it can obtain in the form of a paste by adding a binder, a solvent, etc. to the glass powder obtained as mentioned above, and kneading.

  As a ratio of the glass powder which occupies for the whole paste, 30-90 mass% is common.

  A binder is a component which increases the film | membrane intensity | strength after drying and provides a softness | flexibility, and the content is about 0.1-20 mass% in general. Examples of the binder include polybutyl methacrylate, polyvinyl butyral, polymethyl methacrylate, polyethyl methacrylate, ethyl cellulose, nitrocellulose and the like, and these can be used alone or in combination.

  The solvent is used to paste the material, and the content is generally about 10 to 50% by mass. Examples of the solvent include terpineol, isoamyl acetate, toluene, methyl ethyl ketone, diethylene glycol monobutyl ether acetate, 2,2,4-trimethyl-1,3 pentadiol monoisobutyrate, and these may be used alone or in combination. Can do.

  In order to obtain a green sheet, a binder, a plasticizer, a solvent, and the like are added to the glass powder obtained as described above to form a slurry, and this slurry is made into polyethylene terephthalate (PET) by a doctor blade method. Molded into a sheet on a film such as. Subsequently, the sheet can be molded and then dried to remove the organic solvent and the like.

  As for the ratio of the glass powder which occupies in a green sheet, about 50-80 mass% is common.

  As the binder and the solvent, the same binder and solvent as those used for the preparation of the paste can be used. The mixing ratio of the binder is generally about 0.1 to 30% by mass, and the mixing ratio of the solvent is generally about 1 to 40% by mass.

  The plasticizer is a component that controls the drying speed and imparts flexibility to the dried film, and the content thereof is generally about 0 to 10% by mass. Examples of the plasticizer include dibutyl phthalate, butyl benzyl phthalate, dioctyl phthalate, diisooctyl phthalate, dicapryl phthalate, and dibutyl phthalate, and these can be used alone or in combination.

  Hereinafter, the semiconductor element of the present invention will be described with reference to FIG. 1, but the present invention is not limited to this.

  FIG. 1 is an example of a cross-sectional view of a semiconductor element of the present invention. Reference numeral 1 denotes a mount portion, 2 a semiconductor (light emitting chip), 3 a sealing material, and 4 a housing.

  Examples of the mount portion 1 include those made of resin, ceramics, glass and the like that are excellent in electrical insulation. When the mount portion 1 is formed at the time of sealing, it must be capable of stably maintaining its shape even when the temperature rises at the time of sealing. For example, a material made of alumina is preferable. .

  The semiconductor of No. 2 is a semiconductor that typically emits ultraviolet light or blue light having a wavelength of 360 to 480 nm, and has a quantum well structure (InGaN-based light emitting device) having InGaN with In added to GaN as a light emitting layer. Etc. are exemplified. The semiconductor has electrodes and a lead frame for passing a current, and a substrate made of sapphire or the like on the upper surface, which is not shown.

  The sealing material 3 seals the semiconductor 2, protects the surface of the semiconductor element from being exposed to the atmosphere, and effectively guides light emitted from the semiconductor 2 to the front surface by transmitting light. is there.

  The housing 4 is usually one in which a hole is formed in the center of a metal plate. The inner surface of the hole is preferably tapered as shown in FIG. 1 in order to reflect light emitted from the light emitting element 2 in the horizontal direction and efficiently extract it from the upper surface of the light emitting element. The shape of the hole is typically a circle, but is not limited thereto, and may be an ellipse, a square, or the like. Examples of the metal plate include an aluminum plate or an aluminum alloy plate. In this case, since the reflectance with respect to ultraviolet light and visible light is 90% or more, the light extraction efficiency from the light emitting element can be increased.

  In addition, an insulating layer for electrically insulating the electrode and the housing 4 is present between the electrode and the housing 4, and examples include those made of resin, ceramics, glass, etc., which are shown in FIG. Absent.

  The semiconductor element of this invention can be obtained by sealing a semiconductor using said sealing material.

  In addition, when sealing a semiconductor using the sealing material which processed the glass bulk into the desired shape, the sealing material of a glass molding is arrange | positioned so that a semiconductor may be covered, and it heats and softens a sealing material. The semiconductor element of the present invention can be obtained by fusing.

  Also, when sealing a semiconductor using a sealing material processed into glass powder, it is filled with a powdery sealing material so as to cover the semiconductor, heated to soften and seal the sealing material The semiconductor element of the present invention can be obtained.

  In addition, when a semiconductor is sealed using a sealing material obtained by pressure molding glass powder, the sealing material of the glass powder molded body is placed on the semiconductor and heated to soften and flow the sealing material. The semiconductor element of the invention can be obtained.

  Moreover, when sealing a semiconductor using the sealing material which baked the glass powder molding obtained as mentioned above, the sealing material of the fired body is placed on the semiconductor and heated to soften the sealing material. By flowing, the semiconductor element of the present invention can be obtained.

  When a semiconductor is sealed using a sealing material processed into a paste, the semiconductor element of the present invention is obtained by applying or filling a paste-like sealing material so as to cover the semiconductor, drying, and heating. Can do.

  When a semiconductor is sealed using a sealing material processed into a green sheet shape, the semiconductor element of the present invention can be obtained by placing the green sheet sealing material on the semiconductor and heating.

  It should be noted that the semiconductor is preferably sealed at a temperature of 400 ° C. or lower. By doing in this way, the semiconductor element which suppressed deterioration of a semiconductor and was excellent in the optical characteristic can be obtained. When the sealing temperature is higher than 400 ° C., the semiconductor is likely to deteriorate. A more preferable range of the sealing temperature is 380 ° C. or lower, and more preferably 360 ° C. or lower.

In addition, it is preferable to seal the semiconductor at an atmospheric pressure lower than 1 atm (1.013 × 10 ⁵ Pa) or a neutral or reducing atmosphere (non-oxidizing atmosphere). By doing so, the amount of oxygen in the atmosphere can be reduced, so that deterioration due to oxidation of the semiconductor can be prevented. _Further, it prevents SnO oxidation of _{SnO-P 2 O 5 -B 2} O 3 based glass can prevent lowering of the transmittance of the glass. As a result, a semiconductor element having excellent optical characteristics can be obtained.

In particular, when a semiconductor is sealed using a sealing material processed into a powder form, a pressure-molded powder, a paste form or a green sheet form, from 1 atm (1.013 × 10 ⁵ Pa) It is more preferable to seal the semiconductor at a low atmospheric pressure. By doing so, bubbles generated when the sealing material is softened and fused can be easily removed, and the porosity of the sealing portion (the ratio of the bubbles remaining in the sealing portion) can be reduced. Less scattering and higher transmittance. As a result, a semiconductor element with more excellent optical characteristics can be obtained. When the sealing atmosphere is fired at 1 atm or higher, the semiconductor and glass are easily oxidized and deteriorated at the time of sealing, and bubbles are difficult to escape at the time of sealing, so that it is difficult to obtain a semiconductor element with excellent optical characteristics. Become. The preferable range of the atmospheric pressure of the sealing atmosphere is 0.9 × 10 ⁵ Pa or less, more preferably 1000 Pa or less, still more preferably 200 Pa or less, and particularly preferably 0.001 to 200 Pa.

  Hereinafter, the present invention will be described based on examples.

  Tables 1 to 4 show examples (samples Nos. 1 to 23) and comparative examples (samples Nos. 24 to 26) of the present invention, respectively.

  Each sample in the table was prepared as follows.

First, the raw materials were prepared so as to have the glass composition shown in the table, and mixed uniformly. Next, the prepared raw material was put in an alumina crucible and melted at 900 ° C. for 2 hours in an N ₂ atmosphere (only No. 26 was melted at 1200 ° C. for 2 hours), and then part of the glass melt was placed on the carbon plate. It was poured out and formed into a plate shape, and the rest was formed into a film shape using a roller molding machine. Subsequently, the obtained film-like glass was pulverized with a sieve, and then passed through a 325 mesh sieve to obtain a glass powder. About the obtained plate glass, it cut | disconnected and grind | polished after annealing, the internal transmittance | permeability and refractive index of glass were measured, and the softening point was measured about glass powder. These measurement results are shown in the table.

  Next, the obtained glass powder was put into a mold and subjected to pressure molding to produce a disk-shaped molded body having a diameter of 10 mm and a thickness of 0.8 mm, and a sealing material was obtained.

  Next, after placing a commercially available chip-type blue LED (3 × 2 × 1.3 mm) on an alumina substrate, the above-mentioned sealing material pressure-molded is placed on the LED, and this is shown in the table. A semiconductor element (light-emitting element) was obtained by heat sealing under pressure and temperature for 20 minutes.

  For the sample thus obtained, the luminous efficiency before sealing, after sealing and after the weather resistance test is measured, the reactivity and weather resistance between the sealing material and the semiconductor element are evaluated, and the results are tabulated. Indicated.

  As is apparent from the table, sample No. In Nos. 1 to 22, the softening point of the glass was as low as 395 ° C. or lower, so that the LEDs could be sealed at a temperature of 400 ° C. or lower. Moreover, since LED is sealed using the sealing material which consists of glass whose internal transmittance | permeability of glass is 87% or more and refractive index (nd) is 1.72-1.85, light emission after sealing The efficiency was as high as 8.2 lm / W or more, and the optical characteristics were excellent. Furthermore, the luminous efficiency after the weather resistance test is 7.0 lm / W or more, and the rate of decrease in the luminous efficiency by the weather resistance test (1-the luminous efficiency after sealing / the luminous efficiency after the weather resistance test) is 30% or less. The weather resistance was low. Sample No. No. 23 was sealed in an atmosphere under a pressure of 1 atm. Therefore, when sealing, many fine bubbles remained in the sealed portion, and scattering loss at the sealed portion increased, so that the sample No. Compared with 1-22, the luminous efficiency after sealing was as low as 7.9 lm / W.

  On the other hand, sample No. which is a comparative example. In No. 24, since the softening point was 410 ° C. higher, the semiconductor at the time of sealing deteriorated, and the luminous efficiency after sealing was as low as 5.5 lm / w. Further, the decrease rate of the luminous efficiency by the weather resistance test was 36%, and the weather resistance was also low. Sample No. No. 25 did not emit light because the semiconductor deteriorated due to a reaction between the sealing material and the LED during sealing. Moreover, coloring was recognized by the sealing part. Furthermore, sample no. In No. 26, since the softening point of the glass was as high as 570 ° C., the sealing temperature also increased, the semiconductor deteriorated during sealing, and no light was emitted.

  As for the internal transmittance of the glass, the glass molded into a plate shape is optically polished so that the thickness becomes 1 mm, and the transmittance and reflectance at a wavelength of 588 nm are measured using a spectrophotometer, The internal transmittance (the value obtained by adding the reflectance on both sides of the sample to the transmittance) was determined.

  The refractive index (nd) is indicated by the measured value for the d-line (587.6 nm) of the helium lamp with a Karnew refractometer.

  The softening point was measured using a macro differential thermal analyzer, and the value of the fourth inflection point was taken as the softening point.

  For luminous efficiency, the semiconductor element is operated at a current of 20 mA, the energy distribution spectrum of light emitted from the top surface of the sample is measured in the integrating sphere, and the total luminous flux is calculated by multiplying the obtained spectrum by the standard relative luminous efficiency. The total luminous flux obtained was divided by the power of the light source (0.072 W).

  Moreover, about the evaluation of the reactivity of a sealing material and a semiconductor element, it evaluated by the difference in the luminous efficiency before and behind sealing. It is to be noted that the smaller this difference is, the less the sealing material reacts with the semiconductor element due to the heat when sealing the semiconductor element.

  For the evaluation of the weather resistance, the sealed semiconductor element is left in a pressure cooker tester under the conditions of atmospheric pressure 2 atm, humidity 95%, temperature 121 ° C. for 24 hours, and the luminous efficiency before and after the weather resistance test is measured. The difference was evaluated. In addition, it means that sealing material is excellent in a weather resistance, so that this difference is small.

  The sealing material and the semiconductor element of the present invention are not limited to LED applications, and can be used for those that emit high-power excitation light such as laser diodes.

It is explanatory drawing which shows an example of sectional drawing of the semiconductor element of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Mount part 2 Semiconductor (light emitting chip)
3 Sealing material 4 Housing

Claims (10)

A sealing material for sealing a semiconductor, SnO—P ₂ O ₅ —B ₂ having a thickness of 1 mm, an internal transmittance of 80% or more at a wavelength of 588 nm, and a softening point of 400 ° C. or less. A semiconductor sealing material comprising O ₃ glass. The semiconductor sealing material according to claim 1, wherein the SnO—P ₂ O ₅ —B ₂ O ₃ glass has a refractive index (nd) of 1.5 to 2.2. Semiconductor encapsulation material according to claim 1 or _{2 SnO-P 2 O 5 -B} 2 O 3 based _glass, a B 2 _{O 3,} characterized in that it contains 1 to 30 mol%. _{SnO-P 2 O 5 -B 2} O 3 based glass, a molar _ratio, any one of the preceding claims, characterized in that, being a SnO _/ P 2 O 5 0.9~16 The semiconductor sealing material according to 1. _{SnO-P 2 O 5 -B 2} O 3 based glass, in molar _{percentage, SnO 35~80%, P 2 O} 5 5~40%, B 2 O 3 1~30%, Al 2 O 3 0~10 _{%, SiO 2 0~10%, Li} 2 O 0~10%, Na 2 O 0~10%, K 2 O 0~10%, Li 2 O + Na 2 O + K 2 O 0~10%, MgO 0~10% CaO 0-10%, SrO 0-10%, BaO 0-10%, MgO + CaO + SrO + BaO 0-10%, SnO / P ₂ O ₅ 0.9-16, A semiconductor sealing material according to claim 1.   The semiconductor sealing material according to claim 1, which is processed into a glass molded body, glass powder, glass powder molded body, fired body, paste, or green sheet.   A semiconductor element comprising a semiconductor sealed with the sealing material according to claim 1.   8. The semiconductor element according to claim 7, wherein a semiconductor emitting light in the visible range is sealed.   The semiconductor element according to claim 7, wherein the semiconductor is sealed at a temperature of 400 ° C. or lower. The semiconductor element according to claim 7, wherein the semiconductor is sealed at a pressure lower than 1 atm (1.013 × 10 ⁵ Pa).

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