JP2008030978A - Setter for heat treatment of glass substrate - Google Patents
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本発明は、大型のガラス基板熱処理用セッターに関し、特にプラズマディスプレイパネル(以下、PDPと称す)等に使用される大型のガラス基板を、載置面に直接載置して加熱炉に導入する平板状のガラス基板熱処理用セッターに関する。 The present invention relates to a setter for heat treatment of a large glass substrate, and in particular, a flat plate for placing a large glass substrate used for a plasma display panel (hereinafter referred to as PDP) or the like directly on a placement surface and introducing it into a heating furnace. The present invention relates to a setter for heat treatment of a glass substrate.
近年、表示デバイスの多様化が進む中で、CRTに替わって大画面の平面ディスプレイが表示デバイスの主流になりつつある。その代表格であるPDPは、前面と背面とに2枚のガラス基板を対向配置し、上下を両ガラス基板で、側方を隔壁で挟まれた100〜150μmのセルにHe、Ne等の希ガスを封じ込め電圧の印加によりガス放電させて文字や画像を表示するもので、表示画面の大きさに比して薄型であることを特徴とする。例えば、表示画面が42インチのPDPモジュールは、縦520mm、横920mm、奥行50mm程度の矩形のパネルである。 In recent years, with the diversification of display devices, large-screen flat displays are becoming the mainstream of display devices in place of CRTs. The typical PDP has two glass substrates facing each other on the front and back, both glass substrates on the top and bottom, and a 100-150 μm cell sandwiched between the sides. Characters and images are displayed by discharging gas by applying a gas containment voltage, which is characterized by being thinner than the size of the display screen. For example, a PDP module having a 42-inch display screen is a rectangular panel having a length of about 520 mm, a width of 920 mm, and a depth of about 50 mm.
PDP用ガラス基板には、一般に厚さ3mm弱の平板状のソーダライム系ガラスや高歪点ガラスが用いられ、このガラス基板の上に電極、誘電体、蛍光体等を形成するためにペーストが塗布される。塗布されたペーストをガラス基板に定着させるために、ガラス基板は熱処理用セッター上に載置され、ローラーハースキルン等の加熱炉において450〜650℃の温度域で熱処理が施される。 As a glass substrate for PDP, flat soda-lime glass or high strain point glass having a thickness of less than 3 mm is generally used, and a paste is used to form electrodes, dielectrics, phosphors, etc. on the glass substrate. Applied. In order to fix the applied paste to the glass substrate, the glass substrate is placed on a heat treatment setter and subjected to heat treatment in a temperature range of 450 to 650 ° C. in a heating furnace such as a roller hearth kiln.
このガラス基板熱処理用セッターとして、例えば、SiO2、Al2O3、Li2O、P2O5、TiO2、ZrO2を主成分とし、熱膨張係数が15×10-7/K以下の結晶化ガラスからなり、載置面の平坦度が0.3%以下であり、かつ、載置面の表面粗さがRa値で0.1〜1μmの範囲にあるセッターが開示されている(例えば、特許文献1参照。)。 As the setter for heat treatment of the glass substrate, for example, SiO 2 , Al 2 O 3 , Li 2 O, P 2 O 5 , TiO 2 , ZrO 2 are the main components, and the thermal expansion coefficient is 15 × 10 −7 / K or less. A setter is disclosed which is made of crystallized glass, the flatness of the mounting surface is 0.3% or less, and the surface roughness of the mounting surface is in the range of 0.1 to 1 μm in Ra value ( For example, see Patent Document 1.)
また、別の熱処理用セッターとして、結晶相としてβ−スポジュメン固溶体を含有するLi2O−Al2O3−SiO2系結晶化ガラス板からなり、ガラス基板を載置する面の表面積が14000cm2以上であるセッターが開示されている(例えば、特許文献2参照。)。
上記した特許文献1、2に記載の熱処理用セッターは、ガラス基板の熱処理温度域で繰返し使用すると載置面が凸になるような反り変形が生じ、使用時間と共にその反り変形が大きくなる。この反り変形が大きくなると、ガラス基板がセッターの反り変形に倣って変形してしまう。さらに、ローラーハースキルンで熱処理を行った場合、セッターをローラーで搬送する際に、セッターとローラーの接触面積が小さくなるため、正常に搬送されなくなるだけでなく、セッターがローラーに引っ掛かり、最悪の場合、ローラーやセッターが破損して焼成炉を停止しなければならなくなる事態に陥る虞があった。 When the setter for heat treatment described in Patent Documents 1 and 2 is repeatedly used in the heat treatment temperature range of the glass substrate, warpage deformation occurs such that the mounting surface becomes convex, and the warpage deformation increases with use time. When this warpage deformation becomes large, the glass substrate is deformed following the warpage deformation of the setter. Furthermore, when heat treatment is performed with a roller hearth kiln, when the setter is transported with a roller, the contact area between the setter and the roller is reduced, so that not only the transport is not performed properly, but the setter gets caught on the roller, which is the worst case There was a risk that the roller or setter would break and the firing furnace had to be stopped.
本発明は上記事情に鑑みなされたものであって、ガラス基板の熱処理温度域で繰返し使用しても反り変形が発生しにくいガラス基板熱処理用セッターを提供することを目的とする。 This invention is made | formed in view of the said situation, Comprising: It aims at providing the setter for glass substrate heat processing which is hard to generate | occur | produce a curvature deformation even if it uses repeatedly in the heat processing temperature range of a glass substrate.
本発明者等は、セッターの反り変形の原因が、熱処理中に発生するガラス基板中のアルカリ成分のセッターへの拡散反応によるものであることを突き止めた。すなわち、PDP用ガラス基板は、通常Na2O及びK2Oを含み、それらの合量は、7〜18質量%程度であるため、セッターの載置面に直接ガラス基板を載せて450〜650℃にした焼成炉で熱処理を行うと、ガラス基板中のKやNaが、ガラス基板と密着したセッターへ拡散する。そのため、セッターの載置面での結晶組成やマトリックスガラス相組成が変化し、載置面の表面と内部とで体積差が生じて反り変形を引き起こす。 The present inventors have found that the cause of warping deformation of the setter is due to the diffusion reaction of the alkali component in the glass substrate generated during the heat treatment to the setter. That is, the glass substrate for PDP usually contains Na 2 O and K 2 O, and the total amount thereof is about 7 to 18% by mass. Therefore, the glass substrate is directly placed on the setting surface of the setter and 450 to 650. When heat treatment is performed in a baking furnace set at 0 ° C., K and Na in the glass substrate diffuse to a setter in close contact with the glass substrate. Therefore, the crystal composition and the matrix glass phase composition on the setting surface of the setter change, and a volume difference occurs between the surface and the inside of the mounting surface, causing warpage deformation.
本発明者等は、上記課題を解決するために鋭意研究した結果、耐熱性を損なわない程度に、ガラス相中のK2O及びNa2Oの含有量を多くすることによって、ガラス基板の熱処理温度域で繰返し使用しても反り変形が発生しにくくなることを見出し、本発明として提案するものである。 As a result of diligent research to solve the above problems, the present inventors have increased the contents of K 2 O and Na 2 O in the glass phase to such an extent that the heat resistance is not impaired. The present inventors have found that warp deformation hardly occurs even when used repeatedly in the temperature range, and propose as the present invention.
すなわち、ガラス基板熱処理用セッターは、板状の結晶化ガラスからなり、一方の面にガラス基板を載置して熱処理するためのガラス基板熱処理用セッターにおいて、結晶化ガラスがK2Oを0.8〜4質量%、Na2Oを0.5〜4質量%含有することを特徴とする。 That is, the setter for glass substrate heat treatment is made of plate-like crystallized glass. In the setter for glass substrate heat treatment for placing a glass substrate on one surface for heat treatment, the crystallized glass has a K 2 O value of 0.0. It is characterized by containing 8 to 4% by mass and 0.5 to 4% by mass of Na 2 O.
本発明のガラス基板熱処理用セッターは、上記のように構成したので、ガラス基板の熱処理温度域で繰返し使用しても反り変形が発生しにくくなる。すなわち、K2Oが0.8質量%よりも少ない又はNa2Oが0.5質量%よりも少ないと、セッターとガラス基板のK2OやNa2Oの濃度差が大きくなるため、ガラス基板中のKやNaが、ガラス基板と密着したセッターへ拡散しやすくなり、セッター表面近傍の結晶相やガラス相の組成が変化して、セッターの表面近傍と内部とで体積差が大きくなるからである。また、K2Oが4質量%よりも多い又はNa2Oが4質量%よりも多いと、セッターの耐熱性が低くなることによる変形や反りが発生しやすくなる。また、熱膨張係数が大きくなって、耐熱衝撃性が低くなる。K2Oの好ましい範囲は1〜3.5質量%であり、Na2Oの好ましい範囲は、0.8〜3質量%である。 Since the setter for heat treatment of a glass substrate according to the present invention is configured as described above, even if it is repeatedly used in the heat treatment temperature range of the glass substrate, warpage deformation is unlikely to occur. That is, if K 2 O is less than 0.8% by mass or Na 2 O is less than 0.5% by mass, the difference in concentration between K 2 O and Na 2 O between the setter and the glass substrate becomes large. K and Na in the substrate are likely to diffuse into the setter in close contact with the glass substrate, the composition of the crystal phase and glass phase near the setter surface changes, and the volume difference between the surface near the setter and inside increases. It is. On the other hand, when K 2 O is more than 4% by mass or Na 2 O is more than 4% by mass, the setter is likely to be deformed or warped due to low heat resistance. In addition, the thermal expansion coefficient increases and the thermal shock resistance decreases. A preferable range of K 2 O is 1 to 3.5% by mass, and a preferable range of Na 2 O is 0.8 to 3% by mass.
上記した構成において、熱処理用セッターがLiを含有する場合、具体的には結晶化ガラスが、結晶相としてβ−ユークリプタイト、β−スポジュメン、β−石英固溶体又はβ−スポジュメン固溶体を含有するLi2O−Al2O3−SiO2系結晶化ガラスである場合、K2Oが0.8質量%よりも少なく、Na2Oが0.5質量%よりも少ないと、セッター中のLiとガラス基板中のKやNaとのイオン交換反応により、ガラス基板からセッター中へのKやNaの拡散が増大するため、より一層反り変形が大きくなる。従って、Liを含む材料からなるセッターのK2OやNa2O量を多くすれば、イオン交換反応を防止でき、セッターの反り変形を抑制する効果が大きいものとなる。 In the above configuration, when the heat-treating setter contains Li, specifically, the crystallized glass contains Li-β eucryptite, β-spodumene, β-quartz solid solution or β-spodumene solid solution as a crystal phase. In the case of 2 O—Al 2 O 3 —SiO 2 based crystallized glass, if K 2 O is less than 0.8% by mass and Na 2 O is less than 0.5% by mass, Li and Due to the ion exchange reaction with K and Na in the glass substrate, the diffusion of K and Na from the glass substrate into the setter is increased, so that warping deformation is further increased. Therefore, if the amount of K 2 O or Na 2 O of the setter made of a material containing Li is increased, the ion exchange reaction can be prevented, and the effect of suppressing the warp deformation of the setter becomes large.
また、結晶相が、NaやKを含有する結晶(例えば、NaAlSiO4、KAlSiO4、KAlSi2O6、KNa3(AlSiO4)4等)を含まないことが好ましい。ガラス基板中のNaやKがセッター中に拡散する場合、NaやKは、主に結晶化ガラスのマトリックススガラス相へ拡散するが、このようにすれば、ガラス基板中のNaやKがセッター中に拡散しにくくなる。すなわち、NaやKを含有する結晶が析出しなければ、マトリックスガラス相中のNaやKが結晶成分として使われず、マトリックスガラス相中のNaやK量を維持することができるため、ガラス基板とセッターとのNaやKの濃度差がつきにくいからである。 Further, it is preferable that the crystal phase does not contain crystals containing Na or K (for example, NaAlSiO 4 , KAlSiO 4 , KAlSi 2 O 6 , KNa 3 (AlSiO 4 ) 4, etc.). When Na or K in the glass substrate diffuses into the setter, Na or K mainly diffuses into the matrix glass phase of the crystallized glass. In this way, Na or K in the glass substrate is setter. Difficult to diffuse inside. That is, if crystals containing Na and K do not precipitate, Na and K in the matrix glass phase are not used as crystal components, and the amount of Na and K in the matrix glass phase can be maintained. This is because the Na or K concentration difference from the setter is difficult to be attached.
上記した構成において、結晶化ガラスがLi2Oを1〜6質量%含有することが好ましい。Li2O含有量は、ガラス基板の熱処理時のイオン交換反応を抑制するために、少なければ少ないほど良く、具体的には6質量%以下であることが好ましいが、急加熱・急冷却による破損がないようにするために、Li2O−Al2O3−SiO2系の低膨張結晶又は負膨張結晶を多く析出させ、セッターの熱膨張係数が25×10-7×/K以下とする必要があることから、Li2Oの含有量は1質量%以上必要である。 In the above-described configuration, it is preferable that the crystallized glass contains 1 to 6% by mass of Li 2 O. The Li 2 O content is preferably as small as possible in order to suppress the ion exchange reaction during the heat treatment of the glass substrate. Specifically, the Li 2 O content is preferably 6% by mass or less, but is damaged by rapid heating / cooling. In order to prevent the occurrence of slag, a large amount of Li 2 O—Al 2 O 3 —SiO 2 -based low expansion crystal or negative expansion crystal is precipitated, and the thermal expansion coefficient of the setter is 25 × 10 −7 × / K or less. Since it is necessary, the content of Li 2 O is required to be 1% by mass or more.
また、ガラス基板が、PDP用ガラス基板であり、K2Oを3質量%以上及びNa2Oを1.5%以上含有するガラスからなる場合、K2Oが0.8質量%よりも少なく、Na2Oが0.5質量%より少ないと、ガラス基板とセッターとのK2OやNa2Oの濃度差が大きくなるため、ガラス基板からセッター中へのKやNaの拡散が増大し、より一層反り変形が大きくなる。従って、セッターのNa2OやK2O量を多くすれば、セッターの反り変形を抑制する効果が大きいものとなる。尚、PDP用ガラス基板のNa2O及びK2Oは、それらの含有量が多すぎると歪点が低くなりすぎるため、共に最大でも18質量%に制限される。 Further, the glass substrate is a glass substrate for PDP, may become a K 2 O 3 mass% or more and a Na 2 O glass containing more than 1.5%, K 2 O is less than 0.8 wt% If Na 2 O is less than 0.5% by mass, the difference in the concentration of K 2 O and Na 2 O between the glass substrate and the setter will increase, so that the diffusion of K and Na from the glass substrate into the setter will increase. , Warpage deformation is further increased. Therefore, if the amount of Na 2 O or K 2 O in the setter is increased, the effect of suppressing the warp deformation of the setter becomes large. Incidentally, Na 2 O and K 2 O of the glass substrate for PDP, since the content thereof is too too large strain point is low, is limited both in the 18 wt% at most.
また、ガラス基板を載置する載置面の面積が8500cm2以上であるような大型のセッターの場合、特に反り変形が大きくなるため、上記したように、K2Oを0.8〜4質量%含有し、Na2Oを0.5〜4質量%含有することが好ましい。また、ガラス基板の肉厚が2mm以下の場合にも、熱処理時のセッターの変形に倣って、ガラス基板の反り変形がより発生しやすいため、上記した構成にすることによる効果が一層大きくなる。 Further, in the case of a large setter in which the area of the placement surface on which the glass substrate is placed is 8500 cm 2 or more, since warpage deformation is particularly large, as described above, 0.8 to 4 mass of K 2 O. % containing preferably contains Na 2 O 0.5 to 4% by weight. In addition, even when the thickness of the glass substrate is 2 mm or less, the warp deformation of the glass substrate is more likely to occur following the deformation of the setter during the heat treatment, so that the effect of the above configuration is further increased.
また、本発明のガラス基板熱処理用セッターは、質量百分率で、Li2O 1〜6%、Al2O3 15〜30%、SiO2 50〜70%、TiO2+ZrO2 2.5〜6%、Na2O 0.5〜4%、K2O 0.8〜4%含有するように、溶融法で作製した結晶性ガラス板を700〜1100℃で2〜10時間熱処理することにより作製する。 Further, the glass substrate for heat treatment setter of the present invention, by mass percentage, Li 2 O 1~6%, Al 2 O 3 15~30%, SiO 2 50~70%, TiO 2 + ZrO 2 2.5~6% It is produced by heat-treating a crystalline glass plate produced by a melting method at 700 to 1100 ° C. for 2 to 10 hours so as to contain 0.5 to 4% of Na 2 O and 0.8 to 4% of K 2 O. .
好ましい結晶化ガラス(結晶性ガラス)は、質量百分率で、SiO2 50〜70%、Al2O3 15〜30%、Li2O 1〜6%、ZnO 0〜2%、BaO 0〜3%、TiO2 1〜5%、ZrO2 0.5〜4%、P2O5 0〜6%、MgO 0〜2%、Na2O 0.5〜4%、K2O 0.8〜4%の組成を有し、熱処理すると主結晶としてβー石英固溶体(βーユークリプタイト固溶体)又はβースポジュメン固溶体を析出する。 Preferred crystallized glass (crystallinity glass) is a mass percentage, SiO 2 50~70%, Al 2 O 3 15~30%, Li 2 O 1~6%, 0~2% ZnO, BaO 0~3% TiO 2 1-5%, ZrO 2 0.5-4%, P 2 O 5 0-6%, MgO 0-2%, Na 2 O 0.5-4%, K 2 O 0.8-4 When the heat treatment is performed, β-quartz solid solution (β-eucryptite solid solution) or β-spodumene solid solution is precipitated as the main crystal.
以下に、本発明のガラス基板熱処理用セッターを、実施例を用いて詳細に説明する。 Below, the setter for glass substrate heat processing of this invention is demonstrated in detail using an Example.
表1は、本発明の実施例1、2及び比較例1、2を示す。 Table 1 shows Examples 1 and 2 and Comparative Examples 1 and 2 of the present invention.
実施例1、2及び比較例1、2の結晶化ガラスは、表1に示す組成となるようにバッチを調合し、1650℃で20時間溶融した後、成形した板状の原ガラスを表1に記載の焼成条件で焼成することによって得られた。 The crystallized glasses of Examples 1 and 2 and Comparative Examples 1 and 2 were prepared in batches so as to have the compositions shown in Table 1, and melted at 1650 ° C. for 20 hours. It was obtained by firing under the firing conditions described in 1.
結晶化ガラス中の析出結晶相の同定は、X線回折装置(リガク社製)を用いて行った。 Identification of the precipitated crystal phase in the crystallized glass was performed using an X-ray diffractometer (manufactured by Rigaku Corporation).
反り変形は、1250×700×5mm(載置面の面積:8750cm2)のサイズのセッターの載置面の略中央部に、1000×560×2.8mmのサイズのPDP用高歪点ガラス(日本電気硝子株式会社製PP−8、Na2O:5質量%、K2O:10質量%含有)を載置し、600℃で2週間加熱した後、セッターの載置面形状を、3次元形状測定装置を用いて測定し、最高部と最低部との高低差で評価した。 The warp deformation is performed at a substantially central portion of the mounting surface of a setter having a size of 1250 × 700 × 5 mm (mounting surface area: 8750 cm 2 ) at a high strain point glass for PDP having a size of 1000 × 560 × 2.8 mm ( After placing PP-8 manufactured by Nippon Electric Glass Co., Ltd., Na 2 O: 5 mass%, K 2 O: 10 mass%) and heating at 600 ° C. for 2 weeks, the setting surface shape of the setter is 3 Measurement was performed using a dimensional shape measuring apparatus, and evaluation was made based on the difference in height between the highest part and the lowest part.
表1からわかるように、実施例1、2は、いずれも反り変形が発生しなかった。それに対し、比較例1、2は、いずれも反り変形が発生した。 As can be seen from Table 1, in Examples 1 and 2, no warp deformation occurred. On the other hand, in Comparative Examples 1 and 2, warpage deformation occurred.
以上説明したように、本発明のガラス基板熱処理用セッターは、PDPだけでなく、液晶ディスプレイ、FED等のフラットパネルディスプレイに使用されるガラス基板の熱処理用セッターとして好適である。 As described above, the setter for heat treatment of a glass substrate according to the present invention is suitable as a setter for heat treatment of a glass substrate used not only for PDP but also for flat panel displays such as liquid crystal displays and FEDs.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012020678A1 (en) * | 2010-08-11 | 2012-02-16 | 日本電気硝子株式会社 | Li2O-Al2O3-SiO2-BASED CRYSTALLIZED GLASS |
WO2012066948A1 (en) * | 2010-11-18 | 2012-05-24 | 日本電気硝子株式会社 | Li2o-al2o3-sio2 crystalline glass and li2o-al2o3-sio2 crystallized glass obtained by crystallizing same |
JP2016193832A (en) * | 2010-08-11 | 2016-11-17 | 日本電気硝子株式会社 | Li2O-Al2O3-SiO2-BASED CRYSTALLIZED GLASS |
WO2023024164A1 (en) * | 2021-08-25 | 2023-03-02 | 清远南玻节能新材料有限公司 | Glass ceramic, and preparation method therefor and use thereof |
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2006
- 2006-07-26 JP JP2006203871A patent/JP2008030978A/en active Pending
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WO2012020678A1 (en) * | 2010-08-11 | 2012-02-16 | 日本電気硝子株式会社 | Li2O-Al2O3-SiO2-BASED CRYSTALLIZED GLASS |
JP2012056829A (en) * | 2010-08-11 | 2012-03-22 | Nippon Electric Glass Co Ltd | Li2O-Al2O3-SiO2-BASED CRYSTALLIZED GLASS |
US9126859B2 (en) | 2010-08-11 | 2015-09-08 | Nippon Electric Glass Co., Ltd. | Li2O—Al2O3—SiO2—based crystallized glass |
JP2016193832A (en) * | 2010-08-11 | 2016-11-17 | 日本電気硝子株式会社 | Li2O-Al2O3-SiO2-BASED CRYSTALLIZED GLASS |
WO2012066948A1 (en) * | 2010-11-18 | 2012-05-24 | 日本電気硝子株式会社 | Li2o-al2o3-sio2 crystalline glass and li2o-al2o3-sio2 crystallized glass obtained by crystallizing same |
WO2023024164A1 (en) * | 2021-08-25 | 2023-03-02 | 清远南玻节能新材料有限公司 | Glass ceramic, and preparation method therefor and use thereof |
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