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JP2007095910A - Manufacturing method of wiring board - Google Patents

Manufacturing method of wiring board Download PDF

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Publication number
JP2007095910A
JP2007095910A JP2005281844A JP2005281844A JP2007095910A JP 2007095910 A JP2007095910 A JP 2007095910A JP 2005281844 A JP2005281844 A JP 2005281844A JP 2005281844 A JP2005281844 A JP 2005281844A JP 2007095910 A JP2007095910 A JP 2007095910A
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copper
etching
layer
wiring board
manufacturing
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Masaru Fujiki
勝 藤木
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Elna Co Ltd
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Elna Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a wiring board which can improve the etching factors of a wiring pattern and hardly causes problems due to a change in conductivity, etc. of metals. <P>SOLUTION: The manufacturing method of a wiring board includes a process of forming a predetermined wiring pattern WP by etching a plurality of copper layers stacked vertically. In etching, a kind of copper layer to be used for each copper layer is so selected that the lower the copper layer is located, the higher an etch rate may be. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、上下に積層された複数の銅層をエッチングして所定の配線パターンを形成する工程を含む配線基板の製造方法に関する。   The present invention relates to a method for manufacturing a wiring board including a step of forming a predetermined wiring pattern by etching a plurality of copper layers stacked one above the other.

従来より、少なくとも片面に銅層が設けられた基板に対して、その表面にレジスト膜を形成した後にエッチングを行い、この銅層を所定の配線パターンに形成する配線基板の製造方法が知られている。また、メッキスルーホールで両側の配線パターンが導電接続された両面配線基板を製造する場合、一般に、下記のような工程が採用されている。   Conventionally, a method of manufacturing a wiring board is known in which a resist film is formed on a surface of a substrate having a copper layer provided on at least one side, and etching is performed to form the copper layer in a predetermined wiring pattern. Yes. Moreover, when manufacturing a double-sided wiring board in which the wiring patterns on both sides are conductively connected through plated through holes, the following processes are generally employed.

即ち、図1に示すように、まず、絶縁基材1の両面に銅箔層2が積層された両面銅張積層板を用意する。これに貫通孔SLをドリル等で形成した後、銅をメッキして銅メッキ層3を形成する。このとき、貫通孔SLの内部もメッキされ、メッキスルーホール3sが形成される。次いで、銅メッキ層3の表面に所定の配線パターンに対応するレジスト4を形成すると共に、メッキスルーホール3sを塞ぐようなレジスト4aでテンティングを行う。次いで、エッチングを行って、所定の配線パターンWPを形成し、最後にレジスト4を除去する。   That is, as shown in FIG. 1, first, a double-sided copper-clad laminate in which copper foil layers 2 are laminated on both sides of an insulating substrate 1 is prepared. A through-hole SL is formed in this with a drill etc., Then, copper is plated and the copper plating layer 3 is formed. At this time, the inside of the through hole SL is also plated to form a plated through hole 3s. Next, a resist 4 corresponding to a predetermined wiring pattern is formed on the surface of the copper plating layer 3, and tenting is performed with a resist 4a that closes the plated through hole 3s. Next, etching is performed to form a predetermined wiring pattern WP, and finally the resist 4 is removed.

このようなエッチングプロセス(サブトラクティブ法)によると、一般に銅箔層2の方が銅メッキ層3よりエッチング速度が小さいか又は同等であるため、配線パターンWPの断面形状は、図2の(a)又は(b)に示すような形状となる。このような現象は、配線パターンWPの厚みが大きい場合(例えば大電流用パターン)に特に顕著になる。   According to such an etching process (subtractive method), the copper foil layer 2 generally has an etching rate lower than or equal to that of the copper plating layer 3, and therefore the cross-sectional shape of the wiring pattern WP is shown in FIG. ) Or (b). Such a phenomenon becomes particularly prominent when the thickness of the wiring pattern WP is large (for example, a pattern for large current).

配線パターンWPが図2の(b)に示すような形状になると、エッチングファクターが悪化して短絡等の問題が生じ易くなり、特にファインパターンを形成する場合には、エッチング装置やエッチング液、パターン設計などに特別な工夫をする必要性が生じた。   When the wiring pattern WP has a shape as shown in FIG. 2B, the etching factor is deteriorated and a problem such as a short circuit is likely to occur. Especially when a fine pattern is formed, an etching apparatus, an etching solution, and a pattern are formed. The need to devise special measures for the design has arisen.

このような問題を解消する方法として、下記の特許文献1には、純銅と合金銅とを使用することによって、各層のエッチング速度を変える(上層ほど速度を小さくする)エッチング工程が開示されている。これによって、エッチングによるアンダーカットを小さくすることができる。   As a method for solving such a problem, the following Patent Document 1 discloses an etching process in which pure copper and alloy copper are used to change the etching rate of each layer (the rate is reduced as the upper layer is reduced). . Thereby, the undercut by etching can be reduced.

しかしながら、上記プロセスのように、配線パターンの一部に合金化した銅を使用すると、その部分で金属の導電性等が変化するため、回路設計上の問題が生じ易く、特に高周波用回路において設計通り基板が機能しない場合があった。   However, if alloyed copper is used for a part of the wiring pattern as in the above process, the metal conductivity changes at that part, so circuit design problems are likely to occur, especially in high frequency circuits. In some cases, the board did not function.

特開平5−291256号公報JP-A-5-291256

そこで、本発明の目的は、配線パターンのエッチングファクターを改善することができ、しかも金属の導電性等の変化による問題も生じにくい配線基板の製造方法を提供することにある。   SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a wiring board that can improve the etching factor of a wiring pattern and is less likely to cause problems due to changes in metal conductivity.

上記目的は、下記の如き本発明により達成できる。
即ち、本発明の配線基板の製造方法は、上下に積層された複数の銅層をエッチングして所定の配線パターンを形成する工程を含む配線基板の製造方法において、下側の銅層ほどエッチング速度が速くなるように、各銅層の種類を選択してエッチングすることを特徴とするものである。
The above object can be achieved by the present invention as described below.
That is, the wiring board manufacturing method of the present invention includes a step of forming a predetermined wiring pattern by etching a plurality of copper layers stacked one above the other. The etching is performed by selecting the type of each copper layer so as to increase the speed.

本発明の配線基板の製造方法によると、下側の銅層ほどエッチング速度が速くなるように、各銅層の種類を選択するため、配線パターンの底部が迅速にエッチングされて、配線パターンのエッチングファクターを改善することができる。しかも、合金などを用いることなく、各銅層の種類を選択するだけのため、金属の導電性等の変化による問題も生じにくい。   According to the method for manufacturing a wiring board of the present invention, the bottom part of the wiring pattern is quickly etched to select the type of each copper layer so that the lower copper layer has a higher etching rate. The factor can be improved. In addition, since only the type of each copper layer is selected without using an alloy or the like, problems due to changes in metal conductivity and the like are less likely to occur.

上記において、前記複数の銅層が、銅箔層の上に銅メッキ層が形成されたものであることが好ましい。メッキスルーホールで両側の配線パターンが導電接続された両面配線基板を製造する場合など、通常、下側の銅箔層の方が上側の銅メッキ層よりエッチング速度が小さい(又は同等)ため、得られる配線パターンのエッチングファクターが悪化し易いが、本発明では、下側の銅箔層のエッチング速度が速くなるようにエッチング速度を調整するため、配線パターンのエッチングファクターを改善することができる。   In the above, it is preferable that the plurality of copper layers have a copper plating layer formed on a copper foil layer. For example, when manufacturing a double-sided wiring board in which the wiring patterns on both sides are conductively connected with plated through holes, the lower copper foil layer is usually less etched (or equivalent) than the upper copper plated layer. However, in the present invention, since the etching rate is adjusted so that the etching rate of the lower copper foil layer is increased, the etching factor of the wiring pattern can be improved.

以下、本発明の実施の形態について、図面を参照しながら説明する。図1は、本発明の配線基板の製造方法の一例を示す工程図であり、図2は、本発明の作用効果を説明するための説明図である。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a process diagram showing an example of a method for manufacturing a wiring board according to the present invention, and FIG. 2 is an explanatory diagram for explaining the function and effect of the present invention.

本発明の配線基板の製造方法は、上下に積層された複数の銅層をエッチングして所定の配線パターンを形成する工程を含むものである。配線基板としては、このようなエッチング工程を製造工程として含むものであれば何れでもよく、片面配線基板の他、両面配線基板、多層配線基板、フレキシブル配線基板などでもよい。本実施形態では、図1に示すように、メッキスルーホール3sで両側の配線パターンWPが導電接続された両面配線基板をサブトラクティブ法にて製造する例を示す。   The method for manufacturing a wiring board of the present invention includes a step of forming a predetermined wiring pattern by etching a plurality of copper layers stacked one above the other. Any wiring board may be used as long as it includes such an etching process as a manufacturing process. In addition to a single-sided wiring board, a double-sided wiring board, a multilayer wiring board, a flexible wiring board, or the like may be used. In the present embodiment, as shown in FIG. 1, an example in which a double-sided wiring board in which wiring patterns WP on both sides are conductively connected through plated through holes 3 s is manufactured by a subtractive method is shown.

この例では、まず、絶縁基材1の両面に銅箔層2が積層された両面銅張積層板を用意する。絶縁基材1としては、例えばエポキシ樹脂、フェーノール樹脂、ポリイミド樹脂からなる絶縁膜や、これらの樹脂等をガラス繊維布等に含浸したプリプレグの硬化物、ポリイミドフィルムやポリエステルフィルム等が使用される。   In this example, first, a double-sided copper-clad laminate in which copper foil layers 2 are laminated on both sides of an insulating substrate 1 is prepared. As the insulating substrate 1, for example, an insulating film made of an epoxy resin, a phenol resin, or a polyimide resin, a cured product of a prepreg in which a glass fiber cloth or the like is impregnated with these resins, a polyimide film, a polyester film, or the like is used.

両面銅張積層板の銅箔層2は、絶縁基材1との熱圧着によって一般に形成されるが、メッキ等によって形成することも可能である。銅箔層2の厚みは、厚みのバランスを取ることによって、エッチングファクターの改善効果を効率良く得る上で、3〜200μmが好ましい。   The copper foil layer 2 of the double-sided copper-clad laminate is generally formed by thermocompression bonding with the insulating base material 1, but can also be formed by plating or the like. The thickness of the copper foil layer 2 is preferably 3 to 200 μm in order to efficiently obtain the effect of improving the etching factor by balancing the thickness.

一般に、銅箔層2の方が銅メッキ層3よりエッチング速度が小さいか、又は同等であるため、従来の配線パターンWPの断面形状は、図2の(a)又は(b)に示すような形状となっていた。本発明では、下側の銅層(本実施形態では銅箔層2)ほどエッチング速度が速くなるように、各銅層の種類を選択することにより、配線パターンが図2(c)に示す断面形状となり、エッチングファクターを改善することができる。   In general, since the etching rate of the copper foil layer 2 is lower or equivalent to that of the copper plating layer 3, the cross-sectional shape of the conventional wiring pattern WP is as shown in FIG. 2 (a) or (b). It was in shape. In the present invention, the wiring pattern is shown in FIG. 2C by selecting the type of each copper layer so that the lower copper layer (in this embodiment, the copper foil layer 2) has a higher etching rate. The shape can be improved and the etching factor can be improved.

このようにエッチング速度が速い銅箔層2は、例えば図3に示すようなエッチング速度のプロフィールを有するものである。この銅箔層2の場合、従来の銅箔より20%ほどエッチング速度を早めることができ、銅メッキ層3と比較しても、10〜20%ほどエッチング速度を早めることができる。   Thus, the copper foil layer 2 with a high etching rate has an etching rate profile as shown in FIG. 3, for example. In the case of the copper foil layer 2, the etching rate can be increased by about 20% as compared with the conventional copper foil, and even when compared with the copper plating layer 3, the etching rate can be increased by about 10 to 20%.

このようなエッチング速度が大きい銅箔としては、例えば不純物の含有量が多い銅箔や、結晶構造が密である銅箔、無電解銅メッキによる製法で得られた銅箔が有効である。   As such a copper foil having a high etching rate, for example, a copper foil having a large impurity content, a copper foil having a dense crystal structure, or a copper foil obtained by a production method by electroless copper plating is effective.

次いで、この両面銅張積層板に貫通孔SLを形成するが、この工程はドリリング、パンチ、レーザ等によって行うことができる。貫通孔SLの直径は、例えば100〜2000μmである。   Next, a through-hole SL is formed in the double-sided copper-clad laminate. This step can be performed by drilling, punching, laser, or the like. The diameter of the through hole SL is, for example, 100 to 2000 μm.

次いで、銅をメッキして銅メッキ層3を形成するが、このとき、貫通孔SLの内部もメッキされ、メッキスルーホール3sが形成される。銅メッキ層3の厚みは、厚みのバランスを取ることによって、エッチングファクターの改善効果を効率良く得る上で、5〜100μmが好ましい。   Next, copper is plated to form the copper plating layer 3. At this time, the inside of the through hole SL is also plated to form a plated through hole 3 s. The thickness of the copper plating layer 3 is preferably 5 to 100 μm in order to efficiently obtain the effect of improving the etching factor by balancing the thickness.

メッキは、電解メッキでも無電解メッキでもよいが、電解メッキで得られた銅メッキ層3のほうが、エッチング速度が小さくなるため好ましい。メッキ液としては、市販のメッキ液を使用することができる。   The plating may be electrolytic plating or electroless plating, but the copper plating layer 3 obtained by electrolytic plating is preferable because the etching rate is reduced. A commercially available plating solution can be used as the plating solution.

次いで、銅メッキ層3の表面に所定の配線パターンに対応するレジスト4を形成すると共に、メッキスルーホール3sを塞ぐようなレジスト4aでテンティングを行う。レジスト4の形成方法は、何れでもよいが、例えばドライフィルムレジスト、液状感光性樹脂、印刷インク、などを用いて行うことができる。ドライフィルムレジストを用いる場合、ドライフィルムレジストをラミネートした後、所定のパターンで露光、現像することにより、所望のレジストパターンが形成される。   Next, a resist 4 corresponding to a predetermined wiring pattern is formed on the surface of the copper plating layer 3, and tenting is performed with a resist 4a that closes the plated through hole 3s. Any method may be used for forming the resist 4, and for example, a dry film resist, a liquid photosensitive resin, a printing ink, or the like can be used. In the case of using a dry film resist, a desired resist pattern is formed by laminating the dry film resist and then exposing and developing with a predetermined pattern.

次いで、エッチングを行って、所定の配線パターンWPを形成する。配線パターンWPは、エッチング後の銅箔層2aとエッチング後の銅メッキ層3aとで構成される。エッチングには、銅箔層2と銅メッキ層3のエッチング速度が異なるようなエッチング液が使用され、塩化第2銅、塩化第2鉄、アルカリエッチング液などのエッチング液を使用することができる。エッチング方法としては、浸漬法、スプレー法(シャワー法を含む)、発泡エッチング法などが挙げられる。   Next, etching is performed to form a predetermined wiring pattern WP. The wiring pattern WP is composed of a copper foil layer 2a after etching and a copper plating layer 3a after etching. For the etching, etching solutions having different etching rates of the copper foil layer 2 and the copper plating layer 3 are used, and etching solutions such as cupric chloride, ferric chloride, and alkaline etching solutions can be used. Examples of the etching method include an immersion method, a spray method (including a shower method), a foam etching method, and the like.

エッチングの程度は、エッチング時間や液濃度によって調整できるが、本発明では、図2(c)に示すように、配線パターンWPの上面の線幅に対して、底面の線幅が90%〜120%の範囲内となるように、条件設定するのが好ましい。本発明は、エッチングファクターが改善されるため、従来、ファイン化する場合にエッチング時の工夫が必要となっていた、配線パターンWPの上面の線幅が20〜100μmの場合に特に有効である。   The degree of etching can be adjusted by etching time and liquid concentration. In the present invention, as shown in FIG. 2C, the line width of the bottom surface is 90% to 120% with respect to the line width of the upper surface of the wiring pattern WP. It is preferable to set the conditions so as to be within the range of%. Since the etching factor is improved, the present invention is particularly effective in the case where the line width on the upper surface of the wiring pattern WP, which conventionally requires a device for etching in the case of refinement, is 20 to 100 μm.

次いで、レジスト4を除去するが、薬剤等で剥離することができる。これによって、メッキスルーホール3sで両側の配線パターンWPが導電接続された両面配線基板を得ることができる。   Next, the resist 4 is removed, but can be peeled off with a chemical or the like. As a result, a double-sided wiring board in which the wiring patterns WP on both sides are conductively connected through the plated through hole 3s can be obtained.

次いで、必要に応じて、各種金属のメッキ工程、ソルダレジストやカバーレイの形成工程を実施してもよい。また、多層配線基板等の場合には、更に配線基板の積層一体化、層間接続構造の形成、上層へのビルドアップなどの工程を更に行うことができる。   Next, if necessary, various metal plating steps, solder resist and coverlay forming steps may be performed. In the case of a multilayer wiring board or the like, it is possible to further perform processes such as stacking and integration of wiring boards, formation of an interlayer connection structure, build-up to an upper layer, and the like.

[他の実施形態]
(1)前述の実施形態では、銅箔層の上に銅メッキ層が形成された2層の銅層をエッチングする例を示したが、複数の銅層は3層以上であってもよい。その場合、下側の銅層ほど順にエッチング速度が速くなるように、各銅層の種類を選択すればよい。
[Other Embodiments]
(1) In the above-mentioned embodiment, although the example which etches the two copper layers in which the copper plating layer was formed on the copper foil layer was shown, three or more copper layers may be sufficient. In that case, what is necessary is just to select the kind of each copper layer so that an etching rate may become high sequentially in the lower copper layer.

(2)また、本発明では、複数の銅層は、全て銅メッキ層又は全て銅箔層であってもよく、前述の実施形態と比較して、銅メッキ層と銅箔層の上下が逆になっていてもよい。   (2) In the present invention, the plurality of copper layers may be all copper plating layers or all copper foil layers, and the copper plating layer and the copper foil layer are upside down as compared with the above-described embodiment. It may be.

本発明の配線基板の製造方法の一例を示す工程図Process drawing which shows an example of the manufacturing method of the wiring board of this invention 本発明の作用効果を説明するための説明図Explanatory drawing for demonstrating the effect of this invention 本発明に使用される銅箔と従来の銅箔とのエッチング速度を比較した例を示すグラフThe graph which shows the example which compared the etching rate of the copper foil used for this invention, and the conventional copper foil

符号の説明Explanation of symbols

1 絶縁基材
2 銅箔層
2a エッチング後の銅箔層
3 銅メッキ層
3a エッチング後の銅メッキ層
3s メッキスルーホール
4 レジスト
WP 配線パターン
DESCRIPTION OF SYMBOLS 1 Insulation base material 2 Copper foil layer 2a Copper foil layer after etching 3 Copper plating layer 3a Copper plating layer after etching 3s Plating through hole 4 Resist WP Wiring pattern

Claims (2)

上下に積層された複数の銅層をエッチングして所定の配線パターンを形成する工程を含む配線基板の製造方法において、
下側の銅層ほどエッチング速度が速くなるように、各銅層の種類を選択してエッチングすることを特徴とする配線基板の製造方法。
In a method for manufacturing a wiring board, including a step of forming a predetermined wiring pattern by etching a plurality of copper layers stacked vertically
A method of manufacturing a wiring board, comprising selecting and etching the type of each copper layer so that the lower copper layer has a higher etching rate.
前記複数の銅層が、銅箔層の上に銅メッキ層が形成されたものである請求項1記載の配線基板の製造方法。
The method for manufacturing a wiring board according to claim 1, wherein the plurality of copper layers are obtained by forming a copper plating layer on a copper foil layer.
JP2005281844A 2005-09-28 2005-09-28 Manufacturing method of wiring board Pending JP2007095910A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100889291B1 (en) * 2007-09-12 2009-03-17 삼성전기주식회사 Substrate and its manufacturing method
KR100987754B1 (en) * 2008-05-16 2010-10-13 삼성전기주식회사 Printed circuit board and manufacturing method thereof
WO2012101984A1 (en) * 2011-01-26 2012-08-02 住友ベークライト株式会社 Printed wiring board and method for producing printed wiring board

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JPH1051105A (en) * 1996-08-06 1998-02-20 Mitsubishi Paper Mills Ltd Manufacturing method of printed wiring board
JP2002359454A (en) * 2001-05-31 2002-12-13 Mitsui Mining & Smelting Co Ltd Copper plating circuit layer-annexed copper-plated laminated layer board and method of manufacturing printed wiring board using the same

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JPH1051105A (en) * 1996-08-06 1998-02-20 Mitsubishi Paper Mills Ltd Manufacturing method of printed wiring board
JP2002359454A (en) * 2001-05-31 2002-12-13 Mitsui Mining & Smelting Co Ltd Copper plating circuit layer-annexed copper-plated laminated layer board and method of manufacturing printed wiring board using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100889291B1 (en) * 2007-09-12 2009-03-17 삼성전기주식회사 Substrate and its manufacturing method
KR100987754B1 (en) * 2008-05-16 2010-10-13 삼성전기주식회사 Printed circuit board and manufacturing method thereof
WO2012101984A1 (en) * 2011-01-26 2012-08-02 住友ベークライト株式会社 Printed wiring board and method for producing printed wiring board
JP2012169597A (en) * 2011-01-26 2012-09-06 Sumitomo Bakelite Co Ltd Printed wiring board and manufacturing method therefor

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