JP2007072040A - Liquid crystal device, and method for manufacturing the liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device having a conductive pattern on which the production of rubbing stripes is suppressed, and to provide a method for manufacturing the liquid crystal device. <P>SOLUTION: A conducive pattern that exists in a region where no alignment layer is formed on a substrate subjected to rubbing treatment in a predetermined direction is formed, in such a manner that the cross section of the conductive pattern along a plane orthogonal to the extending direction of the conductive pattern has a lower edge facing the substrate, an upper edge facing the lower edge, a first side edge intersecting one end of the upper edge, a second side edge intersecting the other end of the upper edge and one end of the lower edge, and a third side edge intersecting the other end of the lower edge and the first side edge, where the first side edge is placed facing a predetermined direction, and an angle (θ1) formed by the extended line of the lower edge and an extended line of the first side edge is smaller than an angle (θ2) formed by the lower edge and the second side edge, and that an angle (θ3) formed by the lower edge and the third side edge is larger than the angle (θ1) formed by the extended line of the lower edge and the extended line of the first side edge. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a liquid crystal device and a method for manufacturing the liquid crystal device. In particular, the present invention relates to a liquid crystal device capable of exhibiting highly accurate image display characteristics even when a rubbing process is performed, and a method of manufacturing such a liquid crystal device.

  2. Description of the Related Art Conventionally, as an aspect of an electro-optical device, a liquid crystal device including a pair of substrates and a liquid crystal material sandwiched between the substrates is known. Such a liquid crystal device displays an image by applying a voltage to an electrode disposed on a substrate to align a liquid crystal material and modulating light passing therethrough. On the surface of the substrate, there are a region where an alignment film for aligning the liquid crystal material is formed and a region where no alignment film is formed, and a wiring pattern exists in each region. In order to control the alignment direction of the liquid crystal, physical unevenness may be formed on the surface of the alignment film by rubbing treatment. This unevenness has the effect of defining the alignment direction for the liquid crystal material in direct contact, and enables efficient liquid crystal alignment control when a voltage is applied.

However, since the rubbing process is an operation for processing the entire surface of the substrate, the wiring pattern and the rubbing on the alignment film non-formation region (for example, in the vicinity of the driver IC mounting region) on the substrate where the alignment film is not formed. The member comes into direct contact. At this time, depending on the cross-sectional shape of the wiring pattern, the impact at the time of contact between the wiring pattern and the rubbing member was increased, and the surface of the rubbing member was sometimes distorted. Specifically, when the inclination angle of the side surface on which the rubbing member comes into contact first becomes equal to or larger than a predetermined angle, the surface of the rubbing roller is distorted, and display unevenness called rubbing streaks occurs in the image display area. It has occurred.
In view of this, a method has been proposed in which dummy patterns are arranged in the gaps between the wiring patterns so that the wiring patterns are quasi-uniformly arranged to suppress the occurrence of rubbing lines.
More specifically, as shown in FIG. 21, dummy patterns 618a and 618b are arranged in regions 615a and 615b on the substrate 612 where the wiring pattern 630 and the driver IC 616 are not arranged (patent) Reference 1).
In addition, a method has been proposed in which a rubbing process is performed only on a desired portion by using a rubbing mask during the rubbing process.
More specifically, as shown in FIG. 22, a rubbing mask 730 including a frame portion 731, a pressing pressure portion 732, and an edge portion 733 is disposed on a substrate 750. (See Patent Document 2)
JP 2004-117576 A (Claims, FIG. 1) Japanese Patent Laid-Open No. 9-156032 (Claims, FIGS. 4 and 5)

However, the dummy pattern described in Patent Document 1 has to be arranged with a certain interval in order to prevent a short circuit with the wiring pattern. For this reason, it is impossible to prevent the rubbing member and the side surface of the wiring pattern from coming into contact with each other, and in the cross-sectional shape of the wiring pattern, the inclination angle of the side surface on which the rubbing member first contacts is equal to or greater than a predetermined angle. In some cases, there is a problem that rubbing lines are generated. Further, when the dummy pattern is provided, it has been very difficult to cope with the narrowing of the wiring pitch due to the recent space saving of the liquid crystal device.
Further, the rubbing mask described in Patent Document 2 is difficult to manufacture in the case where the mask is partially masked because the processing of the shape of the rubbing mask has a very complicated design.

In view of this, the inventor diligently made efforts to determine, in the cross-sectional shape of the conductive pattern formed on the substrate, the side located on the side in contact with the rubbing member and the side located on the side facing the substrate. It has been found that by having the third side at the intersection, the impact at the time of contact between the rubbing member and the conductive pattern can be reduced, and the occurrence of rubbing lines can be suppressed, and the present invention has been completed. is there.
That is, the present invention provides a liquid crystal device and a method of manufacturing the liquid crystal device that can exhibit high-precision image display characteristics even when a predetermined rubbing process is performed with a cross-sectional shape of the conductive pattern as a predetermined shape. The purpose is to do.

According to the present invention, there is provided a liquid crystal device including an alignment film and a conductive pattern on a substrate, each of which is rubbed from a predetermined direction and exists in a region where no alignment film is formed on the substrate. A cross-sectional shape obtained by cutting the conductive pattern along a plane orthogonal to the extending direction of the conductive pattern intersects the lower side facing the substrate, the upper side facing the lower side, and one end of the upper side. A second side that intersects the first side, the other end of the upper side and one end of the lower side, and a third side that intersects the other end of the lower side and the first side. And the first side is located on the side facing the predetermined direction, and the angle (θ1) between the extension line of the lower side and the extension line of the first side is Smaller than an angle (θ2) formed between the lower side and the second side, and formed between the lower side and the third side. A liquid crystal device is provided in which the angle (θ3) is larger than the angle (θ1) formed between the extension line of the lower side and the extension line of the first side, and the above-described problems can be solved.
That is, by setting the cross-sectional shape of the conductive pattern in the alignment film non-formation region to the predetermined shape described above, it is possible to reduce the impact when the rubbing member is in contact with the conductive pattern during the rubbing process. Specifically, when the rubbing process is performed so that the first side in the cross-sectional shape first comes into contact with the rubbing member described above, the effect of suppressing the occurrence of rubbing lines while preventing the occurrence of short-circuiting. Obtainable.
The predetermined direction in the rubbing process means a direction in which the rubbing member enters relative to the substrate. That is, in FIG. 5A, it means the direction X in which the rubbing member 190 enters the substrate on which the conductive pattern 70 is formed. In addition, the angle between the side and the base in the present invention means an acute angle with the direction from the lower side toward the second side 84 being positive, as shown in FIG. However, the predetermined direction in the rubbing process mainly means that the substrate is processed in a predetermined direction.

In configuring the liquid crystal device of the present invention, it is preferable that the conductive pattern has a multilayer structure, and the cross-sectional shape thereof is a trapezoidal shape in which the inclination angles (θ1, θ2) of the left and right slopes are different.
By comprising in this way, the impact at the time of a contact with a rubbing member and a conductive pattern can be relieve | moderated effectively, and generation | occurrence | production of a rubbing stripe can be reduced.

In configuring the liquid crystal device of the present invention, the angle (θ1) formed between the lower side and the first side is preferably a value within the range of 10 ° to 45 °.
By adopting such a configuration, the impact at the time of contact between the rubbing member and the conductive pattern can be alleviated particularly with respect to the conductive pattern in which the surface of the rubbing member is likely to be distorted when the rubbing member and the conductive pattern are in contact. it can.

In configuring the liquid crystal device of the present invention, it is preferable that the angle (θ2) formed between the lower side and the second side is a value in the range of 15 ° to 60 °.
By setting it as such a structure, the impact at the time of a contact with a rubbing member and a conductive pattern can be relieve | moderated effectively, and generation | occurrence | production of a rubbing stripe can be reduced.

In configuring the liquid crystal device of the present invention, the angle (θ3) formed between the lower side and the third side is preferably set to a value within the range of 20 ° to 110 °.
By adopting such a configuration, it is possible to improve the durability of the rubbing material during the rubbing treatment. In addition, the width of the conductive pattern can be reduced, and the pitch between wirings can be reduced.

Further, in carrying out the method for manufacturing a liquid crystal device of the present invention, in a method for manufacturing a liquid crystal device having an alignment film and a conductive pattern on a substrate, the conductive pattern facing the substrate in a region where the alignment film is not formed. The angle (θ1) between the first side that intersects one end of the lower side and the second side that intersects the other end of the lower side is From the step of forming to be smaller than the angle (θ2) formed with the second side, and the angle (θ1) formed between the lower side and the first side by removing a part of the first side A step of forming a third side that intersects the lower side at a large angle (θ3), and a step of rubbing the substrate from a predetermined direction using a rubbing material, respectively. A manufacturing method is preferred.
By carrying out in this way, for example, in the case where the conductive pattern has a laminated structure made of a plurality of conductive materials, the angle (θ1) formed between the lower side and the first side is set to the lower side and the first side. A conductive pattern that is smaller than the angle (θ2) formed with the side edge can be formed accurately and easily. Further, by removing a part of the first side and forming a third side that intersects the lower side at an angle (θ3) larger than the angle (θ1) formed between the lower side and the first side. A trapezoidal shape having a notch shape can be formed. Such a third side can reduce an impact at the time of contact between the rubbing member and the conductive pattern, and can efficiently manufacture a liquid crystal device in which the occurrence of rubbing lines is suppressed.
Furthermore, even when the wiring design is miniaturized, the wiring pitch can be reduced while maintaining a predetermined cross-sectional shape by manufacturing in this way.

Further, in carrying out the manufacturing method of the liquid crystal device of the present invention, a rubbing process is performed using a rubbing roller as a rubbing material, and an angle formed between the rotation axis of the rubbing roller and the extending direction of the conductive pattern is 0 ° to A value within the range of 60 ° is preferable.
By carrying out in this way, the impact at the time of contact between the rubbing member and the conductive pattern can be alleviated particularly for the conductive pattern that is likely to be distorted on the surface of the rubbing member when the rubbing member and the conductive pattern are in contact with each other. .

In carrying out the method for manufacturing a liquid crystal device of the present invention, a conductive pattern having a predetermined shape is formed by the first dry etching and the second dry etching having different etching rates, and then a photoetching method or mechanical polishing. The third side is preferably formed by the method.
By carrying out in this way, the angle (θ1) formed between the lower side and the first side is made smaller than the angle (θ2) formed between the lower side and the second side, and the first side and the lower side Even when the conductive pattern having the third side formed at the crossing portion is miniaturized, it can be easily formed with high accuracy. Therefore, an impact at the time of contact between the rubbing member and the conductive pattern can be reduced, and a liquid crystal device in which the occurrence of rubbing lines is suppressed can be efficiently provided.

  Embodiments relating to a liquid crystal device and a method for manufacturing a liquid crystal device of the present invention will be specifically described below with reference to the drawings. However, this embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the present invention.

[First Embodiment]
1st Embodiment of this invention is a liquid crystal device provided with an alignment film and a conductive pattern on a board | substrate, Comprising: The board | substrate is each rubbed from the predetermined direction, The area | region in which the alignment film is not formed in a board | substrate The cross-sectional shape obtained by cutting the conductive pattern existing in the plane perpendicular to the extending direction of the conductive pattern has a lower side facing the substrate, an upper side facing the lower side, and one end of the upper side. Intersects the first side that intersects the second side, the second side that intersects the other end of the upper side and one end of the lower side, and the other side of the lower side and the first side The first side is located on the side facing the predetermined direction, and the angle formed by the extension line of the lower side and the extension line of the first side ( θ1) is smaller than the angle (θ2) between the lower side and the second side, and the lower side and the third side Is larger than the angle (θ1) between the extension line of the lower side and the extension line of the first side.
Hereinafter, as an example of the liquid crystal device of the present embodiment, a liquid crystal device including an element substrate having a TFT (Thin Film Transistor) element structure and a counter substrate having a colored layer will be described with reference to FIGS. However, it will be explained. However, this embodiment shows one aspect of the present invention, and does not limit the present invention, and can be arbitrarily changed within the scope of the present invention.
In addition, in each figure, what attached | subjected the same code | symbol has shown the same member, and abbreviate | omits description suitably.

1. Liquid Crystal Device (1) Basic Configuration First, the liquid crystal device according to the present embodiment will be described. Here, FIG. 1 shows a cross-sectional view of the liquid crystal device 10. Further, FIG. 2 is a schematic perspective view showing the appearance of the liquid crystal device 10.
As shown in these drawings, in the liquid crystal device 10, the counter substrate 30 and the element substrate 60 are bonded to each other through a sealing material at the periphery thereof, and the liquid crystal material is disposed in the gap 21a formed thereby. ing.

(2) Counter substrate The counter substrate 30 has a colored layer 37r, 37g, 37b, a counter electrode 33, a layer thickness adjusting layer 41 for optimizing retardation, and an alignment film 45 on a base 31 made of glass or the like. And a substrate mainly comprising:
Here, the counter electrode 33 is a planar electrode formed over the entire surface with ITO (indium tin oxide) or the like. Further, a color layer 37r as a color filter element such as R (red), G (green), and B (blue) is provided below the counter electrode 33 so as to correspond to the pixel electrode 63 on the element substrate 60 side. 37g and 37b are arranged. A black matrix, that is, a light shielding film 39 is provided as a color mixture prevention region between adjacent colors at a position adjacent to the colored layers 37 r, 37 g, and 37 b and not perpendicular to the pixel electrode 63.

(3) Element Substrate The element substrate 60 includes a TFT element 69 as a switching element on a base 61 made of glass or the like, and a pixel electrode 63 formed in an upper layer of the TFT element 69 with a transparent organic insulating film 81 interposed therebetween. Is a substrate mainly comprising:
Here, the pixel electrode 63 is formed in the reflective region R also as a light reflecting film 79 (63a) for performing reflective display, and in the transmissive region T is formed as a transparent electrode 63b by ITO or the like. Has been. The light reflecting film 79 as the pixel electrode 63 is formed of a light reflecting material such as Al (aluminum), Ag (silver), or the like. Further, an alignment film 85 made of a polyimide-based polymer resin is formed on the pixel electrode 63, and the alignment film 85 is subjected to a rubbing process as an alignment process.

  In addition, a phase difference plate 47 is formed outside the counter substrate 30 (that is, the surface in FIG. 1), and a polarizing plate 49 is further formed thereon. Similarly, a retardation film 87 is formed on the outer surface (that is, the lower side of FIG. 1) of the element substrate 60, and a polarizing plate 89 is further formed thereunder. Further, a backlight unit (not shown) is disposed below the element substrate 60.

The TFT element 69 includes a gate electrode 71 formed on the element substrate 60, a gate insulating film 72 formed on the entire area of the element substrate 60 on the gate electrode 71, and the gate insulating film 72 interposed therebetween. A semiconductor layer 70 formed above the gate electrode 71, a source electrode 73 formed on one side of the semiconductor layer 70 via a contact electrode 77, and a contact electrode 77 on the other side of the semiconductor layer 70. And a drain electrode 66 formed through the electrode.
The gate electrode 71 extends from the gate bus wiring (not shown), and the source electrode 73 extends from the source bus wiring (not shown). Further, a plurality of gate bus lines extend in the horizontal direction of the element substrate 60 and are formed in parallel in the vertical direction at equal intervals, and the source bus lines cross the gate bus lines with the gate insulating film 72 interposed therebetween. A plurality of lines extending in the vertical direction are formed in parallel in the horizontal direction at equal intervals.
Such a gate bus wiring is connected to a liquid crystal driving IC (not shown) and functions as, for example, a scanning line, while a source bus wiring is connected to another driving IC (not shown), for example, a signal line. Acts as
The pixel electrode 63 is formed in a region excluding a portion corresponding to the TFT element 69 in a rectangular region defined by the gate bus wiring and the source bus wiring intersecting each other.

The organic insulating film 81 is formed over the entire area of the element substrate 60 so as to cover the gate bus lines, the source bus lines, and the TFT elements. However, a contact hole 83 is formed in a portion corresponding to the drain electrode 66 of the organic insulating film 81, and the pixel electrode 63 and the drain electrode 66 of the TFT element 69 are electrically connected through the contact hole 83.
In addition, in the organic insulating film 81, a resin film having a concavo-convex pattern composed of a regular or irregular repetitive pattern of peaks and valleys is formed as a scattering shape in a region corresponding to the reflective region R. Has been. As a result, the light reflection film 79 (63a) laminated on the organic insulating film 81 also has a light reflection pattern composed of an uneven pattern. However, since this uneven pattern reduces the light transmission amount, it is not formed in the transmission region T.

(3) -1 Cross-sectional shape 1 of conductive pattern
Next, a cross-sectional structure in which the conductive pattern 70 in the alignment film non-formation region of the element substrate is cut by a plane orthogonal to the wiring direction will be described.
As shown in FIGS. 3A to 3C, the cross-sectional shape of the conductive pattern is the first that intersects the lower side facing the substrate, the upper side facing the lower side, and one end of the upper side. The second side 84a that intersects the other end of the upper side and one end of the lower side, and the third side that intersects the other end of the lower side and the first side. The first side 83a has a predetermined shape including the side 88a, and the first side 83a is located on the side facing the predetermined direction. The angle formed by the extension line of the lower side and the extension line of the first side 83a ( θ1) is smaller than an angle (θ2) formed between the lower side and the second side 84a, and an angle (θ3) formed between the lower side and the third side 88a is an extension line of the lower side and the first side 83a. It is made larger than the angle (θ1) formed by the extension line of.
For example, when such a conductive pattern is formed in a single layer, as shown in FIG. 3A, in a conductive pattern 70a having a trapezoidal cross-sectional shape and having a single layer structure, θ1 <θ2 Furthermore, the third side 88a is formed so that θ3> θ1.
With this configuration, it is possible to suppress the surface distortion of the rubbing member that occurs when the rubbing member 190 and the conductive pattern 70a are in contact with each other, and it is possible to effectively suppress the occurrence of rubbing streaks, and to further reduce the wiring pitch. Can be narrowed.
When the conductive pattern is formed of two layers, as shown in FIG. 3B, the cross-sectional shape is a trapezoidal shape, and the stacked structure is composed of the first layer 80b and the second layer. In the conductive pattern 70b having a two-layer structure composed of 81b, the third side 88a is formed in the first layer 80b so that θ1 <θ2 and θ3> θ1.
By configuring in this way, in addition to the above-described effects, when the second layer 81b corresponding to the uppermost layer is made of a transparent conductive material such as ITO or IZO, the corrosion resistance is improved, so that the resistance value fluctuates due to corrosion. It is possible to stably operate the liquid crystal device while suppressing the above.

Further, when the conductive pattern is formed of three layers, as shown in FIG. 3C, the cross-sectional shape is a trapezoidal shape, and the laminated structure is composed of the first layer 80c and the second layer. In the conductive pattern 70c having a three-layer structure in which 81c and the third layer 82c are sequentially stacked, the third side 88c is formed on the first layer 80c so that θ1 <θ2 and θ3> θ1. It is formed.
With this configuration, in addition to the above-described effects, for example, in the case of a liquid crystal device having an active matrix structure including a TFT element, the material of the conductive pattern is made to match the material of the element electrode and the pixel electrode. These can be formed simultaneously.

Also, in the cross-sectional shapes of the conductive patterns 70a to 70c shown in FIGS. 3A to 3C, the conductive pattern has a multi-layer structure, and the cross-sectional shape is such that the inclination angles (θ1, θ2) of the left and right slopes are Different trapezoidal shapes are preferred.
This is because the impact at the time of contact between the rubbing member and the conductive pattern can be effectively reduced, and the occurrence of rubbing lines can be reduced.
Further, in the cross-sectional shapes of the conductive patterns 70a to 70c shown in FIGS. 3A to 3C, the angle (θ1) formed between the lower side and the third side is a value within the range of 10 ° to 45 °. It is preferable to do.
This is because the impact at the time of contact between the rubbing member and the conductive pattern can be alleviated particularly with respect to the conductive pattern in which the surface of the rubbing member is likely to be distorted when the rubbing member and the conductive pattern are in contact with each other. That is, the angle (θ1) formed between the first side and the lower extension is preferably in the range of 15 ° to 40 °, and more preferably in the range of 20 ° to 35 °.
Furthermore, in the cross-sectional shapes of the conductive patterns 70a to 70c shown in FIGS. 3A to 3C, the angle (θ2) formed between the lower side and the second side is a value within the range of 15 ° to 60 °. It is preferable to do.
This is because the impact at the time of contact between the rubbing member and the conductive pattern can be effectively reduced, and the occurrence of rubbing lines can be reduced. That is, the angle (θ2) formed between the lower side and the second side is preferably in the range of 20 ° to 55 °, and more preferably in the range of 25 ° to 50 °.
Moreover, it is preferable that the angle (θ3) formed between the lower side and the third side is set to a value within the range of 20 ° to 110 °.
This is because the durability of the rubbing material during the rubbing treatment can be improved, the width of the conductive pattern can be reduced, and the wiring pitch can be reduced. That is, θ3 is preferably in the range of 30 ° to 100 °, and more preferably in the range of 40 ° to 90 °.

(3) -2 Cross-sectional shape 2 of conductive pattern
As shown in FIG. 4A, the cross-sectional shape is a trapezoidal shape, and the laminated structure is formed by sequentially laminating a first layer 80c, a second layer 81c, and a third layer 82c. In the conductive pattern 70c having a three-layer stacked structure, θ1 <θ2 and the third side from the second layer 81c to the first layer 80c at the intersection of the extension line of the first side and the lower side. Side 88c is formed. With this configuration, in addition to the above-described effects, for example, when the liquid crystal device of the present invention is a liquid crystal device having an active matrix structure including a TFT element, the material of the conductive pattern is the element electrode and the pixel electrode. These materials can be formed simultaneously by matching with the material.
Further, as shown in FIG. 4B, the second side 84a also has a third side 88a ′ that forms an angle θ3 equivalent to the third side 88a, and the lower side and the second side An angle θ3 ′ formed with the 3 ′ side 88a ′ is formed. With this configuration, it is possible to suppress the surface distortion of the rubbing member that occurs when the rubbing member 190 and the conductive pattern 70a are in contact with each other, and it is possible to effectively suppress the occurrence of rubbing streaks, and to further reduce the wiring pitch. Can be narrowed.
In addition, it can carry out similarly in the case of two layers or three layers.

(3) -3 Wiring direction of conductive pattern Further, when the rubbing member is a rubbing roller, the angle formed by the rotating shaft of the rubbing roller and the extending direction of the conductive pattern is a value within the range of 0 ° to 60 °. It is preferable to do.
This is because the conductive pattern having the cross-sectional shape described above can be selected by selecting only the conductive pattern that is most likely to cause distortion of the surface of the rubbing member and that has a relatively small angle with the rotation axis Z. is there. That is, the angle formed by the rotating shaft of the rubbing roller and the conductive pattern is preferably 5 ° to 55 °, and more preferably 10 ° to 50 °.
More specifically, as shown in FIG. 6, after a rubbing roller 190 having a predetermined rotation axis Z is arranged, the substrate 60 is moved in the direction L in the drawing to form an uneven shape in the alignment film 45. However, in that case, in the conductive pattern 70 arranged on the substrate 60, the angle formed by the rotation axis Z of the rubbing member and the wiring direction of the conductive pattern is 0 ° to 60 ° indicated by the range A and the range B. The conductive pattern 70a in the range is easily subjected to an impact from the rubbing member. Therefore, by applying the cross-sectional shape in the present invention to the conductive pattern 70a, the impact at the time of contact between the rubbing member and the conductive pattern can be reduced, and the occurrence of rubbing lines can be suppressed.

In addition, on the colored layer 37 and the light shielding film 39, an acrylic resin is used to flatten the substrate surface and to provide electrical insulation between the scanning electrode 33 and a member made of a conductive material such as the light shielding film 39. A surface protective layer 41 made of a photocurable or thermosetting resin material such as resin or epoxy resin is formed.
A scanning electrode 33 made of a transparent conductor such as ITO (indium tin oxide) is formed on the surface protective layer 41. The scanning electrode 33 is formed in a stripe shape in which a plurality of transparent electrodes are arranged in parallel. A second alignment film 45 made of polyimide resin or the like is formed on the scan electrode 33.

[Second Embodiment]
In the method of manufacturing a liquid crystal device including an alignment film and a conductive pattern on the substrate, the second embodiment intersects one end of the lower side facing the substrate in the conductive pattern existing in the region where the alignment film is not formed. The angle (θ1) between the lower side and the first side that forms the second side that intersects the other end of the first side and the lower side is the angle between the lower side and the second side Forming a portion smaller than (θ2), removing a part of the first side, and forming an angle (θ3) larger than the angle (θ1) formed between the lower side and the first side A method of manufacturing a liquid crystal device, comprising: a step of forming intersecting third sides; and a step of rubbing the substrate from each of a predetermined direction using a rubbing material.
Hereinafter, the second embodiment will be described in detail with reference to FIGS. 7 to 13 as appropriate. The liquid crystal device according to the present embodiment includes an element substrate having a TFT (Thin Film Transistor) element structure and a color filter substrate including a color filter, and the conductive pattern provided on the element substrate includes tantalum, A case where a two-layered structure in which chromium is sequentially laminated will be described as an example.

1. Element Substrate Manufacturing Process (1) First Layer Formation Process The first layer formation process is a process represented by S1 to S2 in the flowchart shown in FIG.
First, as shown in FIG. 8A, a tantalum layer 80 is formed on a base 61 using a sputtering method or an electron beam evaporation method. At this time, the tantalum layer 80 can be made into a tantalum alloy layer by mixing tungsten or the like.
It is also preferable to form an insulating layer 80 ′ made of tantalum oxide (Ta ₂ O ₅ ) or the like before forming the tantalum layer 80. This is because the adhesion can be remarkably improved and impurity diffusion from the base 61 can be efficiently suppressed.

Next, as shown in FIG. 8B, a photosensitive resin material is uniformly applied to the tantalum layer 80 on the base 61 using a coating device such as a spin coater to form a resin layer 125x. In this case, the conditions for using a spin coater are preferably a resin layer having a thickness of 1 to 10 μm with a coating time of 5 to 20 seconds at a rotational speed of 600 to 2,000 rpm.
Although not shown, the resin layer 125a is pre-baked in order to improve resolution and adhesion. In this case, for example, it is preferable to use pre-baking conditions at 80 to 120 ° C. for 1 to 10 minutes using a hot plate.
Here, the type of the photosensitive material constituting the resin layer is not particularly limited. For example, one or two of acrylic resin, epoxy resin, silicone resin, phenol resin, oxetane resin, and the like can be used. A combination of more than one species can be mentioned.
In addition, the photosensitive material includes a positive type where a portion irradiated with light transmitted through the light transmitting portion is photolyzed and solubilized in the developer, and a portion irradiated with light transmitted through the light transmitting portion. There are negative types that are cured and insolubilized in the developer, and any of them can be suitably used.
In the following description, a case where a positive photosensitive material is used will be described as an example.

Next, as shown in FIG. 8C, pattern exposure is performed by irradiating the resin layer 125 x with energy rays such as i-line indicated by the symbol L through the photomask 109.
Thereafter, the developer is dropped to remove the cured portion of the resin layer, whereby the resin layer 125a as a resist pattern patterned into a predetermined shape can be obtained.
Next, for example, by performing a dry etching process on the tantalum layer 80, the tantalum layer immediately below the opening 125 'formed in the resin layer 125a is selectively etched and patterned. Can be formed.

(2) Second Layer Formation Step The second layer formation step is a step represented by S3 to S4 in the flowchart shown in FIG.
First, as shown in FIG. 9B, a chromium layer 81 is formed on the substrate 61 by sputtering or electron beam evaporation. At this time, since the chromium layer 81 is formed on the already formed first layer, the slope region 81 ′ of the chromium layer 81 formed in the vicinity of the slope region 80 ′ of the first layer 80 Due to the fluidity, the slope is formed more gently than the slope region 80 ′ of the first layer 80.

  Next, a resin layer as a resist pattern is formed on the chromium layer. Here, the coating conditions and the like can be the same as those of the first layer. However, in the second layer forming step, the resin layer 125Y is formed on the already formed first layer, and therefore the resin layer Due to the fluidity of the material of 125Y, as shown in FIG. 9C, the thickness of the resin layer 125Y ′ formed on the slope region is larger than the thickness of the resin layer 125Y ″ formed on the plane region. Thinly formed.

Next, as shown in FIG. 10A, the resin layer 125Y is irradiated with energy rays such as i-line indicated by the symbol L through a photomask 109 ′ to perform pattern exposure.
At this time, the photomask 109 ′ is placed so that the mask pattern of the photomask 109 ′ is shifted in a predetermined direction with respect to the already formed first layer 80. In this case, the direction to be shifted needs to coincide with the direction in which the rubbing member first comes into contact with the conductive pattern in the rubbing step described later.
Thereafter, by performing a predetermined development process, as shown in FIG. 10B, the thickness of the resin layer 125b ′ on the slope region becomes thinner than the thickness of the resin layer 125b ″ on the plane region. The resin layer 125b can be formed.

  Next, as shown in FIG. 10 (c), by performing an etching process on the chromium layer, the chromium layer immediately below the opening formed in the resin layer 125b is selectively etched, whereby the first layer The second layer can be formed at a position shifted in a predetermined direction with respect to the first layer. For example, by using a wet etching method in which the substrate 61 is immersed in an etching solution 178 such as a hydrofluoric acid solution in a container 177, the first side 83n having the inclination angle θ1 can be formed.

Here, the detailed figure of the cross-sectional shape in this etching process is shown to Fig.11 (a)-(b). FIG. 11A shows the state after the end of the resin layer patterning and before the etching, and FIG. 11B shows the state after the etching.
In FIG. 11A, as described above, in the resin layer 125b, the thickness h2 of the resin layer 125b ′ on the oblique side region is thinner than the thickness h1 of the resin layer 125b ″ on the planar region. When the etching process is performed on the substrate in such a state as shown in FIG. 11B, the etching of the chromium layer 81 proceeds and the resin layer 125b is also retracted in the lateral direction by the etching solution. . At this time, the amount of retreat is caused by the thickness of the resin layer, and the amount of retreat becomes larger as the region of the resin layer is thinner. That is, the retraction amount d1 corresponding to the resin layer region 125b ′ having the thickness h2 is larger than the retraction amount d1 ′ corresponding to the resin layer region 125b ″ having the thickness h1.

In this way, by forming the second layer so as to be shifted in a predetermined direction with respect to the first layer, the inclination angle of the first side 83n can be reduced due to the difference in the fluidity of the chromium layer and the amount of recession during etching. θ1 has a gentler inclination than the inclination angle θ2 of the second side 84n. Therefore, for example, even when the first layer 80 and the second layer 81 are formed under the same conditions, the inclination angle θ1 of the first side 83n is greater than the inclination angle θ2 of the second side 84n. Can also be reduced.
Thereafter, by removing the resin layer with sulfuric acid or the like, a conductive pattern 70 having a cross-sectional shape satisfying θ1 <θ2 can be formed as shown in FIG.

(3) Step of forming third side The formation of the third side is a step indicated by S5 in the flowchart shown in FIG. Here, a case where the third side is formed in one place on the first layer will be described as an example. The same process can be performed when the third side is formed in another part.
First, two layers are formed in the same manner as in the first and second layer forming steps, and a resin layer as a resist pattern is formed on the chromium layer as the second layer. Here, the coating conditions and the like can be the same as in the layer forming step.
Specifically, as shown in FIGS. 12A to 12C, the resin layer is irradiated with energy rays such as i-line indicated by symbol L through a photomask 109 ″ to form a pattern. Perform exposure. This photomask is covered by a portion located in the middle from the end in contact with the substrate on the inclined surface 90 of the layer.

Specifically, as shown in FIG. 12A, the resin layer 125Y is irradiated with energy rays such as i-line indicated by the symbol L through a photomask 109 ″ to perform pattern exposure. carry out.
Thereafter, as shown in FIG. 12B, by performing a predetermined development process, a resist pattern for forming the third side can be formed.
Next, as shown in FIG. 12 (c), by performing an etching process on the chromium layer, the chromium layer immediately below the opening formed in the resin layer 125b ′ is selectively etched, and a predetermined portion is obtained. A third side can be formed. For example, the third side can be formed by using a wet etching method in which the substrate 61 is immersed in an etching solution 178 ′ such as a hydrofluoric acid solution in the container 177 ′.

Here, the detailed figure of the cross-sectional shape in this etching process is shown to Fig.13 (a)-(b). FIG. 13A shows a state after the resin layer patterning is finished and before the etching, and FIG. 13B shows a state after the etching.
In FIG. 13A, when the etching process is performed on the substrate in such a state as shown in FIG. 13B, the etching of the chromium layer 81 proceeds.

Here, not only the above method but also a halftone mask that can change the inclination of the layer as appropriate can be used.
The halftone mask is characterized in that the light transmittance is partially different and the applied resin is exposed to light. That is, by carrying out in this way, it is possible to perform exposure processing with different exposure amounts in the reflective region and the transmissive region with respect to the resin by performing a single exposure processing with a constant exposure amount. . Therefore, a predetermined layer can be formed efficiently.
Specifically, a resin layer that is a resist pattern is applied to the upper part of the layer in the same manner as described above. The halftone mask lowers the light transmittance with respect to the portion forming the third side. On the other hand, for the portion where the third side is not formed, the light transmittance is increased, and a halftone mask is formed and exposed.
Here, in this exposure process, it is preferable to make exposure amount into the value within the range of 180-220 mJ / cm < ² >, for example. The reason for this is that, by carrying out in this way, the amount of exposure can be reduced and a layer region of a predetermined thickness can be formed in the reflective region corresponding to the low light transmittance portion of the mask pattern. It is. On the other hand, for a transmissive region that needs to be thickened, a thicker layer region is formed by exposing with a high exposure amount that has passed through a portion of the mask pattern where the light transmittance is high. It is because it can do. Therefore, predetermined unevenness can be efficiently formed by one exposure process. Thus, after exposure, a thin resin layer is formed on the portion forming the third side, and a thick resin layer is formed on the other portions.
Next, by performing an etching process on the chrome layer, the chrome layer directly below the thin resin layer is etched first, and the third side is formed in a predetermined portion. Can do. Similarly to the above, the third side can be formed by using a wet etching method in which the substrate is immersed in an etching solution such as a hydrofluoric acid solution in a container.

(4) Formation process of pixel electrode etc. Formation of a pixel electrode etc. is a process shown by S6 in the flowchart shown in FIG. For example, as shown in FIG. 3B, first, a resin material such as a photocurable resin is applied to the substrate 61 on which the TFT element 69 is formed, and the resin layer is applied to the substrate 61. An organic insulating film 81 is formed by performing predetermined patterning on the substrate.
Next, as shown in FIG. 3C, a metal such as aluminum is applied to the peripheral portion of the contact hole 83 provided in the organic insulating film 81 and corresponding to the reflective region (R). After the deposition, the film is subjected to photolithography and etching to form a matrix-like light reflecting film 79 in the display region. On the other hand, the pixel electrode 63 can be formed by forming a transparent conductive film on a region corresponding to the transmissive region (T) by a sputtering method or the like.
Finally, an orientation film 85 made of polyimide resin or the like is formed on the element substrate 60 obtained in this way, and the orientation film 85 is subjected to a rubbing process to have an orientation control function. it can.

(5) Rubbing step The rubbing step to be performed next is a step represented by S7 in the flowchart shown in FIG. For example, as shown in FIG. 6, by inserting the substrate 60 in the direction of the arrow L with respect to the rubbing member 190, both come into contact with each other and form an uneven shape on the alignment film.
At this time, in the present embodiment, when the second layer is formed, the substrate is inserted so that the rubbing member is brought into contact with the first layer from the side shifted in the direction. By carrying out in this way, the inclination angle of the side (first side) on which the rubbing member comes into contact first in the conductive pattern is formed more gently. The impact at the time of contact can be eased. Therefore, it is possible to reduce the distortion of the surface of the rubbing roller and prevent the rubbing streaks from occurring in the display area.

2. Manufacturing process of color filter substrate (1) Formation of electrodes and the like Next, a manufacturing method of the color filter substrate 30 will be described.
As shown in FIG. 1, the color filter substrate 30 has a light shielding film 39 provided with a plurality of openings corresponding to each pixel region on a base 31 made of soda lime glass, borosilicate glass, non-alkali glass or the like. Form.
As such a light shielding film 39, for example, a metal film such as chromium (Cr) or molybdenum (Mo) is used as the light shielding film 39, or R (red), G (green), and B (blue). A material in which three colorants are dispersed in a resin or other base material, or a material in which a colorant such as a black pigment or dye is dispersed in a resin or other base material can be used. However, it is preferable to use a metal film of chromium or the like as the light-shielding film because the light-shielding property can be ensured even when the film thickness is thin and the step due to the light-shielding film 39 can be reduced.
When the light shielding film 39 is formed using such a metal film, for example, a metal material such as chromium (Cr) is laminated on the first base 31 by vapor deposition or the like, and then an etching process is performed in accordance with a predetermined pattern. Can be formed.

(2) Formation of Color Filter etc. Next, a colored layer 37 is formed on the substrate 31 on which the light shielding film 39 is formed.
For example, the colored layer 37 is formed by applying a photosensitive resin made of a transparent resin in which a coloring material such as a pigment or a dye is dispersed on the substrate 31 on which the light shielding film 39 is formed, using a spin coater or a slit coater. It can be formed by subjecting this to pattern exposure and development processing in sequence. And the said process is repeated for every color, and the colored layers 37r, 37g, 37b of multiple colors are arranged and formed.
In addition, as the arrangement pattern of the colored layer 37, a stripe arrangement is often adopted, but various pattern shapes such as an oblique mosaic arrangement and a delta arrangement can be adopted in addition to the stripe arrangement.

Next, a photo-curing or thermosetting resin material is applied over the entire surface of the substrate 31, and patterning is performed using a photolithography method to form the surface protective layer 41 at least in a region corresponding to the display region. That is, by flattening the surface of the substrate, the first electrode 33 formed on the surface protective layer can be flattened and the cell gap can be made uniform. It is because it can do.
As such a resin material, for example, an acrylic resin, an epoxy resin, an imide resin, a fluororesin, or the like can be used. These resins are applied onto a substrate in an uncured state having fluidity, and are cured by appropriate means such as drying, photocuring, and thermosetting. As a coating method, it can apply using a spin coater, a slit coater, etc.

(3) Formation of Scan Electrode Next, a transparent conductive layer made of a transparent conductive material such as ITO (indium tin oxide) is entirely formed on the surface protective layer 41 by, for example, a sputtering method and photolithography. Patterning is performed using a method to form the scanning electrode 33.
Finally, an alignment film 45 made of polyimide resin or the like is formed on the substrate on which the scan electrode 33 is formed.

(4) Rubbing process The rubbing process performed next is a process represented by S4 'in the flowchart shown in FIG. This step can be performed under the same conditions as the rubbing step shown in S6 in the element substrate manufacturing step.

3. Assembling process Next, on either one of the color filter substrate and the element substrate, a sealing material is laminated so as to surround the display area, and then the other substrate is overlaid and heat-pressed to attach the color filter substrate and the element substrate. Together, the cell structure is formed.
Thereafter, a liquid crystal material is injected into the cell from an injection port provided in a part of the sealing material, and then sealed with a sealing material 25 or the like.

4). Post-process Next, the phase difference plates (1 / 4λ plates) 47 and 77 and the polarizing plates 49 and 79 are arranged on the outer surfaces of the color filter substrate and the element substrate, and a driver is mounted, whereby the liquid crystal device is mounted. Can be manufactured.

5. Inspection Step Next, an inspection step for inspecting the presence or absence of rubbing lines generated due to the rubbing process is performed by inputting a predetermined signal to the driver and displaying an image.
Such an inspection process is basically a visual sensory inspection, and for example, a five-step standard is provided to evaluate the quality. As a result, the liquid crystal device in which the rubbing streaks are visually recognized can be determined as a defective product, so that the incorporation into the electronic device or the like can be stopped.

[Third Embodiment]
The third embodiment is a layer forming method different from the layer forming method of the second embodiment. Specifically, after a conductive pattern having a predetermined shape is formed by first dry etching and second dry etching with different etching rates, a third side is formed by a photoetching method or a mechanical polishing method. A method for manufacturing a liquid crystal device.
Hereinafter, the third embodiment will be described in detail with reference to FIGS. 14 to 19 as appropriate.
In addition, the liquid crystal device according to the present embodiment includes an element substrate having a TFT (Thin Film Transistor) element structure and a color filter substrate provided with a color filter. In addition, a conductive pattern having a single layer structure made of tantalum will be described as an example of the conductive pattern provided on the element substrate.
The following description will focus on the differences from the second embodiment, and description of points that can be configured similarly will be omitted as appropriate.

1. Element Substrate Manufacturing Process (1) Tantalum Layer Forming Process First, as shown in FIG. 14A, a tantalum layer 80p is formed on a base 61 by sputtering or electron beam evaporation. Since this step can be performed under the same conditions as the formation of the tantalum layer in the second embodiment described above, detailed description thereof will be omitted.

(2) First resist pattern forming step Next, after forming a resin layer on the tantalum layer 80p, exposure through a predetermined photomask and development, as shown in FIG. A resin layer 125p is formed as a patterned resist pattern.
Since the first resist pattern forming step can be performed under the same conditions as those in the second embodiment, a detailed description thereof is omitted here.

(3) First Dry Etching Step Next, as shown in FIGS. 14A to 14B, the tantalum layer directly under the opening formed in the resin layer 125p is selectively etched to obtain a tantalum layer 80p. A predetermined pattern is formed. By performing this process, a patterned tantalum layer 80p ′ including sides 83p and 85p is formed on the substrate 61.
Here, the side 85p is a portion covered with a resist mask in the second dry etching step described later, and thus is formed as the second side 84p in this step.

Here, an outline of the dry etching process will be described. In the first dry etching step, as shown in FIG. 14C, the tantalum layer is etched with a mixed gas 174 in which oxygen is mixed with an etching gas mainly composed of a reactive gas such as SF4 or SF6. It is.
First, in the decompressed chamber 171, the electrode 170 is disposed at a position facing the substrate 61 and the substrate 61, and an alternating voltage 173 having a predetermined frequency is applied between the electrode 170 and the substrate 61. Next, a reactive gas 174 such as SF 6 or SF 4 is allowed to flow into the chamber 171, thereby forming a plasma region 175 containing fluorine radicals and oxygen ions in the gap between the electrode 170 and the substrate 61. At this time, the fluorine radicals and oxygen ions vibrate between the electrode 170 and the base 61 due to the influence of the electric field generated by the alternating voltage, and a part of them collides with the surface of the substrate 60.
During the collision, fluorine radicals react with tantalum layer 80p to produce tantalum pentafluoride (TaF ₅ ), while oxygen ions react with carbon in resin layer 125p to produce carbon dioxide (CO ₂ ). Thus, the tantalum layer 80p and the resin layer 125p are etched at an etching rate corresponding to the mixing ratio of the reactive gas and oxygen, respectively.

15A, when the etching rate of the tantalum layer 80 is sufficiently higher than the etching rate of the resin layer 125, the depth of the tantalum layer compared to the etching amount d2 in the horizontal direction of the resin layer. Since the etching amount L in the direction becomes sufficiently large, the first side 83k and the second side 84k can form substantially vertical sides.
On the other hand, when the oxygen gas flow rate is preferentially mixed as compared to FIG. 15A, the horizontal etching amount d3 of the resin layer proceeds to some extent as shown in FIG. The side 83m and the second side 84m are more gently inclined as compared with the condition of FIG.
That is, in the dry etching method, the inclination angle of the conductive pattern can be arbitrarily adjusted by changing the mixing ratio of the reactive gas and oxygen in the etching gas or the absolute amount of the oxygen flow rate.

  Next, by removing the resist using ashing or concentrated sulfuric acid, a patterned tantalum layer 80p ′ can be formed as shown in FIG.

(4) Step of Forming Second Resist Pattern Next, a second resist pattern is formed on the patterned tantalum layer 80p ′. The formation of the second resist pattern can basically be performed under the same conditions as the formation of the first resist pattern, but here, the rubbing member 190 and the first resist pattern are applied first. It is formed at a position shifted by a predetermined amount on the contact side.
More specifically, as shown in FIG. 16A, the second resist pattern is formed so that the resin layer 125q remains only on the second side 84p and the upper side.
In addition, although the case where it shifted so that it may coat | cover on the 2nd side edge 84p is taken as an example here, even if it is a case where it shifted so that only the edge | side 83p may be covered, the 2nd mentioned later The same effect can be obtained by adjusting the dry etching conditions.

(5) Second Dry Etching Step Next, a second dry etching is performed on the second resist pattern. The dry etching conditions here need to be performed under a condition in which the flow ratio of the etching gas and oxygen is changed as compared with the first dry etching conditions.
More specifically, as shown in FIG. 16B, the side 84p is dry so as to be a first side 83q having an inclination angle θ1 different from the inclination angle θ2 of the second side 84p. Etching conditions are determined. For example, by increasing the oxygen flow rate ratio as compared with the first dry etching condition, θ1 <θ2 can be achieved as shown in FIGS.
After these processes, by removing the resin layer 125q, as shown in FIG. 16C, a conductive pattern 70q having a cross-sectional shape satisfying θ1 <θ2 can be formed.

(6) Step of forming third side Next, a third side is formed with respect to a predetermined cross-sectional shape. Here, the case where the third side is formed in the first layer will be described as an example. However, even when the third side is formed in another portion, the same can be implemented.
The formation of the third side is a step indicated by S6 in the flowchart shown in FIG. Here, a case where the third side is formed in one place on the first layer will be described as an example.
First, two layers are formed in the same manner as in the first and second layer forming steps, and a resin layer as a resist pattern is formed on the chromium layer as the second layer. Here, the coating conditions and the like can be the same as in the layer forming step.
Specifically, as shown in FIG. 17, pattern exposure is performed by irradiating the resin layer 125 x with energy rays such as i-line indicated by a symbol L through a photomask 109 ″. This photomask is covered by a portion located in the middle from the end in contact with the substrate on the inclined surface 90 of the layer.

Next, as shown in FIG. 17A, the resin layer 125Y is irradiated with energy rays such as i-line indicated by a symbol L through a photomask 109 ″ to perform pattern exposure.
Thereafter, as shown in FIG. 17B, a predetermined development process is performed to form a resist pattern for forming the third side.
Next, as shown in FIG. 17C, the chromium layer is etched selectively by etching the chromium layer, so that the chromium layer immediately below the opening formed in the resin layer 125b ′ is selectively etched. A third side can be formed. For example, the third side can be formed by using a wet etching method in which the substrate 61 is immersed in an etching solution 178 ′ such as a hydrofluoric acid solution in the container 177 ′.
In addition, as a method for forming the third side, a mechanical polishing method may be used in addition to the photoetching method as described above.
In the mechanical polishing method, a polishing blade 300 as shown in FIG. 18A is used, and as shown in FIG. 18B, it is set on the upper part forming the third side. Next, the polishing blade 300 is rotated and brought into contact with the layer coated with the abrasive as shown in FIG. When the polishing is finished, the polishing blade 300 is pulled up to a predetermined position and stopped as shown in FIG.
As a method for forming the third side, photoetching or mechanical polishing can be appropriately performed.

(7) Formation of Pixel Electrode, etc. Next, in the pixel electrode formation process, a protective film made of a transparent insulating film and a pixel electrode made of a transparent conductive film are sequentially formed on the substrate on which the TFT element is formed. It is.
More specifically, as shown in FIG. 19B, first, a resin material such as a photocurable resin is applied onto the base 61 on which the TFT element 69 is formed, and the resin layer is applied to the resin layer. An organic insulating film 81 is formed by performing predetermined patterning.
Next, as shown in FIG. 19C, a metal such as aluminum is applied to the peripheral portion of the contact hole 83 provided in the organic insulating film 81 and corresponding to the reflective region (R). After the deposition, the film is subjected to photolithography and etching to form a matrix-like light reflecting film 79 in the display region. On the other hand, the pixel electrode 63 can be formed by forming a transparent conductive film on a region corresponding to the transmissive region (T) by a sputtering method or the like.
Finally, an orientation film 85 made of polyimide resin or the like is formed on the element substrate 60 obtained in this way, and the orientation film 85 is subjected to a rubbing process to have an orientation control function. it can.

(8) Rubbing Step Next, the rubbing step is a step represented by S8 in the flow chart shown in FIG. 20, and after forming the alignment film on the substrate on which the conductive pattern described above is formed, as shown in FIG. By inserting the substrate 60 in the direction of the arrow L with respect to the rubbing member 190 rotated in the direction M, both come into contact with each other to form an uneven shape on the alignment film.
At this time, in this embodiment, when the conductive pattern is formed, the substrate is inserted so that the rubbing member is brought into contact with the side formed on the condition that the oxygen flow rate ratio is larger. By carrying out in this way, the inclination angle of the side (first side) on which the rubbing member comes into contact first in the conductive pattern is formed more gently. The impact at the time of contact can be eased. Therefore, it is possible to reduce the distortion of the surface of the rubbing roller and prevent the rubbing streaks from occurring in the display area.

2. Manufacturing Process of Color Filter Substrate The manufacturing process of the color filter substrate is a process indicated by S1 ′ to S4 ′ in the flowchart shown in FIG. 20, and is performed in the same manner as the manufacturing process of the color filter substrate in the second embodiment. Since it is possible, description here is abbreviate | omitted.

3. Assembly, post-process, and inspection process These processes are processes indicated by S9 to S11 in the flowchart shown in FIG. 20, and these can be performed in the same manner as the assembly, post-process, and inspection process in the second embodiment. Since it is possible, description here is abbreviate | omitted.

According to the liquid crystal device of the present invention, it is possible to efficiently provide a liquid crystal device having excellent image display characteristics by providing the liquid crystal device with a predetermined cross-sectional shape of the conductive pattern and suppressing the occurrence of rubbing lines. .
Accordingly, electro-optical devices and electronic devices such as liquid crystal devices including TFT elements, such as mobile phones and personal computers, liquid crystal televisions, viewfinder type / monitor direct view type video tape recorders, car navigation devices, pagers, etc. It can be widely applied to electrophoretic devices, electronic notebooks, calculators, word processors, workstations, videophones, POS terminals, electronic devices equipped with touch panels, and the like.

It is a schematic sectional drawing which shows the liquid crystal device of this invention. It is a schematic perspective view which shows the liquid crystal device of this invention. (A)-(c) is a figure provided in order to demonstrate the relationship between the laminated structure and inclination | tilt angle of the conductive pattern provided with the predetermined | prescribed cross-sectional shape. (Part 1) (A)-(b) is a figure provided in order to demonstrate the relationship between the laminated structure and inclination | tilt angle of the conductive pattern provided with the predetermined | prescribed cross-sectional shape. (Part 2) (A)-(c) is a figure provided in order to demonstrate the inclination angle of a cross-sectional shape. It is a figure provided in order to demonstrate the positional relationship of the planar direction of a rubbing member and a conductive pattern. It is a flowchart explaining the manufacturing method of the liquid crystal device in 2nd Embodiment. (A)-(d) is a figure explaining the manufacturing method of the liquid crystal device in 2nd Embodiment of this invention. (Part 1) (A)-(c) is a figure explaining the manufacturing method of the liquid crystal device in 2nd Embodiment of this invention. (Part 2) (A)-(d) is a figure explaining the manufacturing method of the liquid crystal device in 2nd Embodiment of this invention. (Part 3) (A)-(b) is a figure provided in order to demonstrate the cross-sectional shape at the time of forming shifting the 1st layer and the 2nd layer. (A)-(d) is a figure for demonstrating the formation method of the 3rd side in 2nd Embodiment of this invention (the 1). (A)-(b) is a figure for demonstrating the formation method of the 3rd side in 2nd Embodiment of this invention (the 2). (A)-(d) is a figure provided in order to demonstrate the relationship between the dry etching conditions and the cross-sectional shape of a conductive pattern (the 1). (A)-(d) is a figure provided in order to demonstrate the relationship between the dry etching conditions and the cross-sectional shape of a conductive pattern (the 2). It is a figure for demonstrating dry etching. (A)-(b) is a figure for demonstrating the photoetching for forming the 3rd side in 3rd Embodiment of this invention. (A)-(d) is a figure for demonstrating the method of forming a 3rd side by a mechanical polishing method. It is a figure for demonstrating the pixel electrode formation method. It is a flowchart explaining the manufacturing method of the liquid crystal device in 3rd Embodiment. It is a figure provided in order to demonstrate the conventional liquid crystal device (the 1). It is a figure provided in order to demonstrate the conventional liquid crystal device (the 2).

Explanation of symbols

10: liquid crystal device, 11: liquid surface, 18: uninjected part, 20: pair of substrates, 21: electro-optical material (liquid crystal material), 23: seal part, 23a: liquid crystal injection port, 24: liquid crystal injection dish, 30 : Counter substrate (color filter substrate), 31: substrate, 33: scanning electrode, 35: light reflecting film, 35a: opening, 39: light shielding film, 41: protective film (layer thickness adjusting layer), 47: phase difference plate , 49: polarizing plate, 60: element substrate, 61: substrate, 63: light reflecting film, 65: data line, 66: drain electrode, 69: TFT element, 71: gate electrode, 72: gate insulating film, 73: source Electrode, 75: scanning line, 77: contact layer, 81: organic insulating film, 82: third layer, 83: first side, 84: second side, 85: alignment film, 87: phase difference Plate, 88: third side, 89: polarizing plate, 90: slope of layer, 93: flexible Bull substrate, 109: photo mask, 125: resin layer, 190: rubbing member, 300: abrasive blade

Claims (8)

A liquid crystal device comprising an alignment film and a conductive pattern on a substrate,
Each of the substrates is rubbed from a predetermined direction,
A cross-sectional shape obtained by cutting a conductive pattern existing in a region where the alignment film is not formed in the substrate along a plane orthogonal to the extending direction of the conductive pattern, and a lower side facing the substrate; A second side that intersects the upper side facing the lower side, a first side that intersects one end of the upper side, and the other end of the upper side and one end of the lower side A predetermined shape including a side and a third side that intersects the other end of the lower side and the first side,
The first side is located on a side facing in a predetermined direction, and an angle (θ1) formed between an extension line of the lower side and an extension line of the first side is determined by the lower side and the second side. An angle (θ3) between the lower side and the third side is smaller than an angle (θ2) made with the side, and an angle (θ3) between the extension of the lower side and the extension of the first side ( A liquid crystal device characterized by being larger than θ1).   2. The liquid crystal device according to claim 1, wherein the conductive pattern has a multilayer structure, and a cross-sectional shape of the conductive pattern is a trapezoidal shape in which inclination angles (θ 1, θ 2) of right and left slopes are different.   3. The liquid crystal device according to claim 1, wherein an angle (θ1) formed between the lower side and the first side is set to a value within a range of 10 ° to 45 °.   4. The liquid crystal device according to claim 1, wherein an angle (θ2) formed between the lower side and the second side is set to a value in a range of 15 ° to 60 °.   5. The liquid crystal device according to claim 1, wherein an angle (θ3) formed between the lower side and the third side is set to a value within a range of 20 ° to 110 °. In a manufacturing method of a liquid crystal device including an alignment film and a conductive pattern on a substrate,
In the conductive pattern existing in a region where the alignment film is not formed, a second side that intersects one end of the lower side facing the substrate and a second end that intersects the other end of the lower side Forming a side so that an angle (θ1) formed between the lower side and the first side is smaller than an angle (θ2) formed between the lower side and the second side;
A part of the first side is removed to form a third side that intersects the lower side at an angle (θ3) larger than an angle (θ1) formed by the lower side and the first side. Process,
A step of rubbing the substrate using a rubbing material from a predetermined direction;
A method for manufacturing a liquid crystal device, comprising:   A rubbing process is performed using a rubbing roller as the rubbing material, and an angle formed between the rotation axis of the rubbing roller and the extending direction of the conductive pattern is set to a value within a range of 0 ° to 60 °. A method for manufacturing a liquid crystal device according to claim 6.   The conductive pattern having the predetermined shape is formed by first dry etching and second dry etching having different etching rates, and then the third side is formed by a photoetching method or a mechanical polishing method. 8. A method of manufacturing a liquid crystal device according to claim 6,

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