JP2006266697A - Probe unit and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe unit capable of inspecting specimens in which electrodes are arranged at narrow intervals in any shape. <P>SOLUTION: The probe unit is provided with a plurality of contact parts to be in contact with electrodes of specimens; a plurality of connection parts to be connected to external electrodes; a plurality of first guide parts for guiding the direction of movement of the contact parts; a plurality of spring parts for connecting to the contact parts and the connection parts, making the contact parts electrically continuous to the connection parts, and pressing the contact parts in a direction away from the connection parts; and a plurality of joint parts for insulating adjacent contact parts from each other, adjacent connection parts from each other, and adjacent spring parts from each other and joining the adjacent connection parts to each other. The probe unit is integrally formed by lithography. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe unit for inspecting an electronic device and a method for manufacturing the probe unit.

Conventionally, a probe unit for inspecting an electronic device is known. Along with the high integration, the arrangement interval of the electrodes of the electronic device is narrowed. For this reason, high accuracy is required for alignment between the electrode of the electronic device and the contact portion of the probe unit.
Patent Document 1 discloses a probe unit in which probes that are in contact with electrodes of an electronic device are radially attached to an annular member. However, according to the probe unit disclosed in Patent Document 1, since the probes must be attached to the annular member one by one, the position of the probe is aligned with high accuracy with respect to the electrodes of the electronic device arranged at a narrow interval. It is difficult. Moreover, in the probe unit disclosed in Patent Document 1, the arrangement of electrodes of an electronic device that can be inspected is limited.

  Patent Documents 2, 3, 4, 5, and 6 describe a probe unit that makes a probe contact perpendicularly to a wafer on which an electronic device is formed. In the probe units disclosed in Patent Documents 2, 3, 4, and 5, although there are few limitations on the arrangement form of the electrodes of the electronic device that can be inspected, the probes must be manually attached, so they are arranged at a narrow interval. It is difficult to align the position of the probe with high accuracy with respect to the electrode of the electronic device. Further, in the probe unit disclosed in Patent Document 6, a groove for positioning the probe is formed in the holding member of the probe. However, when the interval between the grooves is narrow, it is difficult to attach the probe to the holding member. is there. Moreover, according to the probe unit disclosed in Patent Document 3, the tip of the probe is a free end, so that the position of the probe is easily displaced with respect to the electrode of the electronic device. In addition, according to the probe units disclosed in Patent Documents 3, 4, 5, and 6, since the distance between the distal ends of the probes and the distance between the proximal ends of the probes are the same, the probes are arranged at a narrow interval. Therefore, it becomes difficult to connect the base end portion of the probe and the external electrode.

Japanese Patent Laid-Open No. 1-25431 JP 2000-55119 A JP 2002-62315 A JP 2001-343397 A JP 2003-240801 A Japanese Patent Laid-Open No. 2003-194851

  The present invention has been created in view of the above-described problems, and an object thereof is to provide a probe unit that can inspect a specimen in which electrodes are arranged in an arbitrary shape at a narrow interval.

(1) A probe unit for achieving the above object includes a plurality of contact portions that contact an electrode of a specimen, a plurality of communication portions connected to an external electrode, and a plurality of first portions that guide a moving direction of the contact portion. One guide part, a plurality of spring parts that are connected to the contact part and the contact part, connect the contact part and the contact part and push the contact part in a direction away from the contact part, and the adjacent contact parts A plurality of connecting portions that insulate the adjacent connecting portions and the adjacent spring portions and connect the adjacent connecting portions, and are integrally formed using lithography.
According to the present invention, since the contact portion pushed by the spring is provided, even if the contact portion is brought into contact with the wafer on which the sample is formed, the contact portion and the electrode of the sample can be reliably conducted. Therefore, according to the present invention, it is possible to inspect a specimen in which electrodes are arranged in an arbitrary shape. Further, according to the present invention, since the plurality of contact portions are integrally formed using lithography, it is possible to inspect a specimen in which electrodes are arranged at a narrow interval.

(2) The first guide part may be a conductor connected to the communication part.

(3) The first guide portion may be an insulator connected to the connecting portion.

(4) The interval between the contact portions may be wider than the interval between the contact portions.
By making the interval between the contact portions wider than the interval between the contact portions, the contact portion and the external electrode can be easily connected even if the contact portions are arranged at a narrow interval according to the electrode of the specimen.

(5) The connection portion may include a ground conductor portion that is insulated from the contact portion, the communication portion, and the spring portion and connected to the ground.
According to the present invention, it is possible to improve the high frequency characteristics of a signal passing through the contact portion.

(6) The probe unit is fixed across the first guide portions adjacent to each other with the contact portion interposed therebetween, and is opposed to each other with the contact portion and the spring portion interposed therebetween to guide the moving direction of the contact portion. An insulating layer may be further provided.
According to the present invention, since the contact portion is surrounded by the probe unit alone, the moving direction of the contact portion can be guided by the probe unit alone.

(7) The probe unit may further include a conductor layer fixed to the opposite side of the insulating layer from the contact portion and connected to the ground.
According to the present invention, it is possible to improve the high frequency characteristics of a signal passing through the contact portion.

(8) The connecting portion is connected to the second contact portion that contacts the external electrode, the base portion that is continuous to the spring portion, the second contact portion and the base portion, and the second contact portion and the base portion are electrically connected. And a second spring portion that pushes the second contact portion in a direction away from the base portion. Furthermore, the probe unit may further include a plurality of second guide portions that guide a moving direction of the second contact portion.
According to the present invention, since it is not necessary to join the wiring that connects the second contact portion and the external electrode to the second contact portion, it is possible to replace parts in units of probe units.

(9) The connecting portion may be formed by ceramic sputtering.

(10) The connecting portion may be formed by curing a resin.

(11) A method of manufacturing a probe unit for achieving the above object includes a contact part that contacts an electrode of a specimen, a contact part that contacts an external electrode, the contact part, and the contact part connected to the contact part and the contact part. A plurality of spring portions that are electrically connected to the connecting portion and push the contact portion in a direction away from the connecting portion, a first guide portion that guides a moving direction of the contact portion, and the adjacent contact portions adjacent to each other. A step of forming a plurality of connecting portions that insulate the connecting portions and the adjacent spring portions and connect the adjacent connecting portions by using lithography on the substrate; and removing the substrate Obtaining a probe unit comprising the contact portion, the spring portion, the first guide portion, and the connecting portion that are integrally coupled.
According to the present invention, the contact portion, the contact portion, the spring portion, the first guide portion, and the connecting portion are formed on the substrate using lithography, and then the substrate is removed to integrally connect the contact portion and the spring portion. A probe unit including the first guide portion and the communication portion can be obtained.

(12) The method for manufacturing the probe unit includes: forming a first mask having a first opening corresponding to the contact portion on the substrate; and forming the contact portion in the first opening. Removing the first mask; and a second mask having a second opening for forming a first sacrificial film in a portion corresponding to a gap between the contact portion and the first guide portion. Forming on the substrate from which the mask has been removed; forming the first sacrificial film in the second opening; removing the second mask; and a first corresponding to the first guide part. Forming a third mask having three openings on the substrate from which the second mask has been removed, and making the first guide part thicker than the contact part in the third opening. Forming on the substrate; and the first guide Removing the first sacrificial film, the third mask, and the substrate after forming the gate portion, and obtaining the probe unit.
According to the present invention, after forming a sacrificial film (first sacrificial film) using a thin mask (second mask) in a portion corresponding to a gap between the contact portion and the first guide portion, Since the first guide portion is formed using the three masks as a mask, the first guide portion can be accurately obtained even when the distance between the first guide portion and the contact portion is considerably smaller than the thickness of the first guide portion. And a contact portion can be formed.

(13) The method for manufacturing the probe unit includes a step of forming a first mask having a first opening corresponding to the contact portion on the substrate, and a step of forming a first sacrificial film in the first opening. A portion corresponding to a gap between the contact portion and the first guide portion; and a step of forming the contact portion on the first sacrificial film in the first opening portion; a step of removing the first mask; Forming a second mask having a second opening for exposing the contact portion on the substrate from which the first mask has been removed, and a second sacrifice for directly covering the contact portion in the second opening. Forming a film; removing the second mask; and removing the second mask from a third mask having a third opening corresponding to the first guide portion and thicker than the second mask. Forming on the substrate, and in the third opening Forming the first guide portion on the substrate to be thicker than the contact portion; and a workpiece having the first guide portion formed so that the first sacrificial film remains on the contact portion with a predetermined thickness. Flattening the surface, and removing the first sacrificial film, the second sacrificial film, and the third mask remaining after the surface of the workpiece is flattened, thereby the probe unit And obtaining a step.
According to the present invention, after forming a sacrificial film (second sacrificial film) using a thin mask (second mask) in a portion corresponding to the gap between the contact portion and the first guide portion, Since the first guide portion is formed using the three masks as a mask, the first guide portion can be accurately obtained even when the distance between the first guide portion and the contact portion is considerably smaller than the thickness of the first guide portion. And a contact portion can be formed. According to the present invention, the first sacrificial film is formed between the contact portion and the substrate, and the first guide portion is formed with the second sacrificial film formed directly on the opposite side of the contact portion from the substrate. The first guide part can be formed thicker than the contact part.

(14) The method of manufacturing the probe unit includes a step of forming a conductor layer on the substrate, a step of forming an insulating layer on the conductor layer, the contact portion and the spring portion on the insulating layer, Forming a first guide part and the communication part. Furthermore, in the step of obtaining the probe unit, a probe unit including the contact portion, the spring portion, the first guide portion, the connecting portion, the conductor layer, and the insulating layer that are integrally coupled may be obtained.
According to the present invention, it is possible to obtain a probe unit that improves the high-frequency characteristics of a signal passing through the contact portion.

(15) The method for manufacturing the probe unit may further include a step of forming a third sacrificial film directly on the substrate. Furthermore, in the step of removing the substrate, the contact portion, the spring portion, the first guide portion, and the connecting portion formed on the third sacrificial film are removed by removing the third sacrificial film. It may be separated from the substrate.
According to the present invention, the substrate can be easily removed without damaging the probe unit.

  In the present specification, “... formed on” means “... formed directly on” and “... on the intermediate” unless there is a technical obstruction factor. It is meant to include both “formed through”. In addition, the order of each operation of the method described in the claims is not limited to the order of description unless there is a technical impediment, and may be executed in any order, and may be executed simultaneously. Also good.

Embodiments of the present invention will be described below with reference to the drawings. In each of the embodiments, the component having the same reference sign corresponds to the component of the other embodiment having the reference sign.
(First Example)
1. Probe Card, Probe Assembly, and Sample FIG. 1A is a diagram showing a probe card according to the first embodiment of the present invention. FIG. 1B shows a probe assembly according to the first embodiment of the present invention. FIG. 2 is an enlarged view showing a part of the probe assembly according to the first embodiment of the present invention.

  As shown in FIG. 1A, the probe card 4 according to the first embodiment has a configuration in which a rectangular plate-shaped interposer 5 is mounted on a circular wiring board 11 and a probe assembly 71 is fixed on the interposer 5. It is. The probe card 4 is for inspecting all DRAMs formed on one wafer at the same time. In the DRAM as a specimen, as shown in FIG. 3, the electrodes 7 are arranged in two rows at non-uniform intervals. The probe card 4 has a function of inputting a test signal output from the test apparatus body to the electrode 7 of the sample 6, taking out an output signal from the electrode 7 of the sample 6, and transmitting the output signal to the test apparatus body.

As shown in FIG. 1A, FIG. 1B, and FIG. 2, the probe assembly 71 includes a plurality of probe blocks 73 and a plurality of diffusion wiring portions provided in one-to-one correspondence with the probe blocks 73. 74 is fixed to the assembler 72.
One set of probe block 73 and diffusion wiring part 74 correspond to one specimen 6 or a plurality of specimen groups. In order to correspond to the electrodes 7 arranged in two rows of the specimen 6, two probe units 75 are provided in one probe block 73. The pair of probe blocks 73 and the diffusion wiring board 74 are coupled and electrically connected in a state where they are accurately aligned using a positioning portion described later. Further, since the probe block 73 and the diffusion wiring board 74 are fixed to the assembler 72 with screws, they can be exchanged one by one. Therefore, even if a defect occurs in a part of the probe assembly 71, the probe block 73 in which the defect has occurred may be replaced, and the repair cost can be reduced.

  A plurality of sets of probe blocks 73 and diffusion wiring boards 74 are joined to the assembler 72 in a state where they are aligned using a positioning portion described later, thereby forming each set of probe blocks 73 and diffusion wiring boards 74 on the wafer. Alignment for each specimen 6 can be performed. Therefore, a plurality of sets of probe blocks 73 and diffusion wiring boards 74 can be accurately aligned with respect to a plurality of samples 6 on the wafer, and a plurality of samples 6 can be inspected simultaneously.

2. Configuration of Probe Unit FIGS. 4 and 5 are diagrams showing the probe unit 75.
As shown in FIG. 4, the probe unit 75 has a plurality of conducting wires 76 connected by a connecting portion 82, and is integrally configured by lithography.

  One conductive wire 76 has a first contact portion 77 that contacts the electrode 7 of the specimen 6 and a second contact portion 79 that contacts the electrode of the diffusion wiring portion 74 at both ends. The first contact portion 77 is pushed by the first spring portion 78 in a direction protruding from the outer edge of the probe unit 75. The first spring portion 78 has a bellows shape. The moving direction of the first contact portion 77 is guided by the first guide portion 88. The first guide part 88 is provided on both sides of the first contact part 77. The first contact portion 77 moves in a direction perpendicular to the wafer on which the specimen 6 is formed. The first contact portion 77 and the first spring portion 78 are formed thinner than the first guide portion 88 and the base portion 81. The first guide portion 88 is connected to the base portion 81 with a gap formed between the first contact portion 77 and the first spring portion 78. The second contact portion 79 is pushed by the second spring portion 80 in a direction protruding from the outer edge of the probe unit 75 to the opposite side of the first contact portion 77. The second spring portion 80 has a bellows shape. The moving direction of the second contact portion 79 is guided by the second guide portion 83. The second guide portion 83 is provided on both sides of the second contact portion 79. The second contact portion 79 moves perpendicular to the diffusion wiring portion 74. The second guide portion 83 continues to the base portion 81 with a gap formed between the second contact portion 79 and the second spring portion 80. The second contact portion 79 and the second spring portion 80 are formed thinner than the second guide portion 83 and the base portion 81. The first contact portion 77 is continuous with the first spring portion 78, and the first spring portion 78 is continuous with the base portion 81. The second contact portion 79 is continuous with the second spring portion 80, and the second spring portion 80 is continuous with the base portion 81. The base 81 is bent so that the interval between the adjacent second contact portions 79 is wider than the interval between the adjacent first contact portions 77.

The connecting portion 82 connects the conducting wires 76 in an insulated state. The connecting portion 82 is provided between the conductive wires 76 and is coupled to the base portion 81, the first guide portion 88, and the second guide portion 83.
Fixing holes 86 are formed in the edge portions 85 on both sides of the probe unit 75. A protrusion 87 is formed at the end of the edge 85 on the second contact portion 79 side. The fixing hole 86 is used to align and fix the probe unit 75 to the block 108. The protrusion 87 is used to align the probe block 73 and the diffusion wiring board 74 fixed to the probe block 73 with the assembler 72.

  As shown in FIGS. 5A and 5B, a plurality of small protrusions may be formed on the inner wall of the first guide portion 88 facing the first contact portion 77, as shown in FIG. As shown, a plane parallel to the moving direction of the first contact portion 77 may be formed. The distance between the first guide portion 88 and the first contact portion 77 is preferably 0.1 μm or more so as not to prevent the movement of the first contact portion 77. Moreover, in order to make the 1st contact part 77 and the electrode 7 of the test substance 6 contact correctly, it is preferable to set it as 100 micrometers or less.

  According to the present embodiment, since the plurality of first contact portions 77 that reciprocate in a direction perpendicular to the wafer on which the specimen is formed are integrally formed by lithography, the specimens arranged at narrow intervals are formed. The plurality of first contact portions 77 can be accurately brought into contact with the plurality of electrodes 7. In addition, since the plurality of first contact portions 77 are integrally formed by lithography, manufacturing is easier as compared with a configuration in which components that contact the electrodes of the specimen need to be individually attached to other components. Even if the specimen 6 is provided with a plurality of electrodes 7 at a narrow interval, the base 81 is provided so as to expand the interval between the second contact portions 79. Therefore, the second contact portion 79, the external electrode, Are easily connected (see FIG. 3). Further, since the contact between the external electrode and the second contact portion 79 is maintained by the second contact portion 79 being pushed by the second spring portion 80, the second contact portion 79 is joined to the external electrode by soldering or the like. There is no need. Therefore, according to the present embodiment, it is possible to replace parts in units of probe units.

FIG. 6 is a view showing a modification of the probe unit 75.
In this modification, as shown in FIG. 6, a plurality of conducting wires 76 are formed in a straight line and arranged in parallel to each other. When many electrodes 7 are arranged on the specimen 6 at a narrow interval and the distance between the specimens is narrow, a space for bending a plurality of conductors in the probe unit may not be secured. Unit 75 is used. Even if the distance between the second contact portions 79 is narrow, the wiring interval can be expanded by the diffusion wiring portion 74 as long as the electrode of the diffusion wiring portion 74 and the second contact portion 79 can be accurately aligned. Even if the wiring interval cannot be increased even in the diffusion wiring portion 74, the electrodes can be easily connected to the external electrodes by disposing the electrodes in the longitudinal direction of the linear wiring.

3. Probe Unit Manufacturing Method Hereinafter, the probe unit manufacturing method will be described as follows: (1) manufacturing process on the first contact portion side, (2) manufacturing process on the second contact portion side, (3) manufacturing process on the edge, (4) It demonstrates in order of the isolation | separation process of probe units.

(1) Manufacturing process on the first contact portion side FIGS. 7 to 22 are views showing manufacturing steps in the vicinity of the first contact portion of one probe unit.
First, as shown in FIG. 7, a first sacrificial film 89 is formed on the substrate 90. The substrate 90 is made of a material that is resistant to a manufacturing environment such as heat, vacuum, and chemicals during the manufacturing process, can easily obtain a flat surface, is hardly damaged, and has excellent dimensional stability. For example, glass such as Si or quartz, or ceramic such as alumina is used. As the first sacrificial film 89, a sputtered film such as Cu or Sn, a deposited film, a plated film, or the like, which can be easily removed selectively from the finished product by etching or the like, is used. When a material that can be easily removed selectively from the finished product such as Cu is used for the substrate 90, the function of the first sacrificial film 89 can be realized by the substrate 90 itself, so that the first sacrificial film 89 is not formed. May be.

  Next, as shown in FIG. 8, a resist film 91 serving as a first mask having an opening 92 corresponding to the first contact portion 77 and the first spring portion 78 is formed on the first sacrificial film 89. Specifically, a resist is applied onto the first sacrificial film 89, and the resist is exposed and developed using a predetermined mask, thereby forming a resist film 91 having a predetermined pattern. For the exposure, UV light, electron beam, X-ray or the like is used.

  Next, as shown in FIG. 9, a second sacrificial film 93 is grown in the opening 92. This step is performed in order to form the first contact portion 77 and the first spring portion 78 thinner than the first guide portion 88. For the second sacrificial film 93, for example, a plating film such as Cu or Sn is used. The thickness is preferably 0.5 μm or more and 20 μm or less.

  Next, as shown in FIG. 10, a first conductor film 94 constituting the first contact portion 77 and the first spring portion 78 is formed on the second sacrificial film 93 in the opening 92 by plating. For the first conductor film 94, Ni, Ni—Co alloy, Ni—Fe alloy, Rh, Au—Cu alloy or the like is used. The plating thickness is adjusted so that the first contact portion 77 has such a thickness as to have rigidity sufficient to break through the oxide film on the surface of the electrode 7 and reliably connect to the electrode 7. For example, it is 5 μm or more and 100 μm or less. The first contact portion 77 and the first spring portion 78 may be formed of different conductor films, respectively, or only the tip of the first contact portion 77 may be formed of another conductor film. In that case, a plurality of conductor films are formed by performing plating a plurality of times.

Next, as shown in FIG. 11, the resist film 91 is removed. A method of dissolving the resist with an alkaline solution, an organic solvent, or the like, a method of removing the resist in a gas phase by plasma ashing, or the like is used.
Next, as shown in FIG. 12, a resist film 95 as a second mask having an opening 96 through which the first conductor film 94 and the first sacrificial film 89 in the vicinity thereof are exposed is formed on the first sacrificial film 89. . A specific forming method is in accordance with the process shown in FIG.

  Next, as shown in FIG. 13, a third sacrificial film 97 is grown on the first conductor film 94 and the first sacrificial film 89 in the opening 96 by plating. For the third sacrificial film 97, Cu, Sn or the like is used. The third sacrificial film 97 is formed in order to form a gap between the first guide portion 88 and the first contact portion 77. Therefore, the thickness of the third sacrificial film 97 corresponds to the distance between the first guide portion 88 and the first contact portion 77, and is preferably 0.1 μm or more and 100 μm or less. A plating method other than wet plating such as sputtering or vapor deposition may be used.

Next, as shown in FIG. 14, the resist film 95 is removed. A specific method conforms to the process shown in FIG.
Next, as shown in FIG. 15, a resist film 101 is formed as a third mask having an opening 102 at a portion where the first guide portion 88 and the base portion 81 are to be formed. The resist film 101 is formed thicker than the resist film 95. A specific forming method is based on FIG.

  Next, as shown in FIG. 16, the second conductor film 103 constituting the first guide portion 88 and the base portion 81 is formed in the opening 102 by plating. Ni, Ni—Co alloy, Ni—Fe alloy, Rh, Au—Cu alloy, or the like is used for the second conductor film 103. Further, the second conductor film 103 is formed to have a thickness that is higher than the third sacrificial film 97 from the substrate 90.

  Next, as shown in FIG. 17, the resist film 101 is removed. Specifically, it conforms to the process shown in FIG. In this embodiment, the base 81 is formed simultaneously with the first guide portion 88 by the second conductor film 103 in the steps shown in FIGS. The base 81 may be formed simultaneously with the first contact portion 77 and the first spring portion 78 by the first conductor film 94.

Next, as shown in FIG. 18, a resist film 130 is formed so as to cover a portion on the substrate 90 where the connecting portion 82 is not formed. A specific method conforms to the process shown in FIG.
Next, as shown in FIG. 19, the insulating film 104 constituting the connecting portion 82 is formed on the entire substrate 90. The insulating film 104 is formed to have a thickness such that a portion corresponding to the connecting portion 82 is at least higher than the upper surface of the third sacrificial film 97. As the insulating film 104, a ceramic sputtered film such as alumina or SiO ₂ is used. When the insulating film 104 is formed using bias sputtering in which a bias is applied to the substrate 90, even if unevenness is formed on the substrate 90 before this step, the recess can be filled with the insulating film 104, and the flatness is excellent. Insulating film 104 can be obtained. Note that a resin may be used for the insulating film 104. For example, a resist applied and hardened by hard baking may be used.

Next, as shown in FIG. 20, by performing grinding, polishing, polishing, CMP, etc. from the surface of the insulating film 104, the insulating film 104 is removed until the polished surface reaches the third sacrificial film 97, and the insulating film 104, The surfaces of the second conductor film 103, the third sacrificial film 97, and the resist film 130 are planarized.
Next, as shown in FIG. 21, the resist film 130 is removed. A specific method conforms to the process shown in FIG.

Next, as shown in FIG. 22, when the remaining first sacrificial film 89, second sacrificial film 93, and third sacrificial film 97 are removed, the probe unit 75 is separated from the substrate 90. The first sacrificial film 89, the second sacrificial film 93, and the third sacrificial film 97 are dissolved using an etchant.
The manufacturing process on the first contact portion 77 side of the probe unit 75 has been described above.

  As shown in FIG. 23, the second conductor film 103 is formed on the first sacrificial film 89 prior to the first conductor film 94, whereby the first guide part 88 and the first contact part 77 and the first spring are formed. After being formed before the portion 78, a third sacrificial film 97 for determining the distance between the first guide portion 88 and the first contact portion 77 may be formed.

  Further, the step of forming the third sacrificial film 97 shown in FIGS. 12 to 14 is omitted, and after the step shown in FIG. 11, the second conductor film 103 constituting the first guide portion 88 and the base portion 81 is formed as shown in FIG. The first contact portion 77 and the first spring portion 78 and the first guide portion 88 and the base portion 81 may be continuously formed by forming the above using lithography. In order to form a gap between the first guide portion 88 and the first contact portion 77, a resist film 101 that thinly covers the side wall of the first contact portion 77 is formed by lithography. However, when the resist is exposed, the light used for the exposure is reflected by the side wall of the first contact portion 77 and the resist is also exposed by the reflected light. Therefore, the distance between the first guide portion 88 and the first contact portion 77 is increased. When the thickness of the first guide part 88 is considerably small, the patterning accuracy of the resist film 101 is lowered.

  In contrast, according to the above-described manufacturing method in which the first guide portion 88 is formed after the third sacrificial film 97 is formed, a thin resist film is formed at a portion corresponding to the gap between the first contact portion 77 and the first guide portion 88. 95 is used to form the first guide portion 88 using the third sacrificial film 97 and the thick resist film 101 as a mask, so that the patterning accuracy due to the reflected light during exposure is affected. Can be reduced. Therefore, even if the distance between the first guide portion 88 and the first contact portion 77 is considerably smaller than the thickness of the first guide portion 88, the gap between the first guide portion 88 and the first contact portion 77 is Can be formed with high accuracy. Therefore, when the distance between the first guide portion 88 and the first contact portion 77 is considerably smaller than the thickness of the first guide portion 88, the first guide portion 88 is formed after the third sacrificial film 97 is formed. It is desirable. Further, according to the manufacturing method described above, the second sacrificial film 93 is formed between the first contact portion 77 and the first sacrificial film 89, and the first sacrificial film 89 is directly opposite to the first sacrificial film 89. Since the first guide part 88 is formed directly on the first sacrificial film 89 with the three sacrificial films 97 formed, the first guide part 88 can be formed thicker than the first contact part 77.

(2) Manufacturing process on the second contact portion side The second contact portion 79, the second spring portion 80, and the second guide portion 83 are the first contact portion 77, the first spring portion 78, and the second guide portion 83 shown in FIGS. It forms according to the formation process of one guide part 88. You may form simultaneously with the 1st contact part 77, the 1st spring part 78, and the 1st guide part 88. FIG.

(3) Edge manufacturing process (fixing hole and protrusion forming process)
The edge portion 85 is formed using lithography simultaneously with the first contact portion 77. Alternatively, the first contact portion 77 is formed by plating using a resist pattern formed by lithography with reference to the positioning pattern used in the lithography process. By using lithography, the fixing hole 86 and the protrusion 87 of the edge portion 85 can be formed with high positional accuracy with respect to the first contact portion 77 and the second contact portion 79.

(4) Separation process of probe units A plurality of probe units 75 are simultaneously formed on the substrate 90 based on the manufacturing processes (1) to (3) described above, as shown in FIG. A sacrificial film 107 is formed between the probe units 75, and when the probe units 75 are separated from the substrate 90 in the sacrificial film removing step shown in FIG. 22, the probe units 75 are also separated. By simultaneously manufacturing a plurality of probe units 75 on one substrate 90, a plurality of probe units of uniform quality can be obtained at a time. Note that the probe units 75 may be separated from each other by cutting with dicing.

4). Configuration of Probe Block FIG. 26 is a diagram showing blocks that constitute the probe block. 27 and 28 are diagrams showing a method of fixing the block and the probe unit.
As shown in FIG. 26, the substantially rectangular parallelepiped main body 110 of the block 108 is formed with two grooves 111 crossing the main body 110 in the direction orthogonal to the opposing side surfaces 115a and 115b. A probe unit 75 is accommodated in the groove 111. The groove 111 has two side walls 117 perpendicular to the first surface 118 of the block body 110. The block main body 110 is formed with two first fixing holes 112 penetrating the block main body 110 in a direction orthogonal to the opposing side surfaces 115 c and 115 d, that is, in a direction orthogonal to the groove 111. The first fixing hole 112 is a hole for inserting a fixing pin 109 described later for positioning a plurality of probe units 75 fixed to one block 108. The block body 110 is formed with a second fixing hole 113 that penetrates the block body 110 in a direction perpendicular to the first surface 118. The second fixing hole 113 is a hole for inserting a later-described screw 128 for fixing the block 108 to the assembler 72. Two legs 114 are provided on the second surface 116 of the block body 110. The leg portion 114 is for aligning the block 108 and the diffusion wiring portion 74.

  27 and 28, after inserting the probe unit 75 into the two grooves 111 of the block 108, the fixing pin 109 is inserted into the first fixing hole 112 of the block 108 and the fixing hole 86 of the probe unit 75, respectively. When inserted, a plurality of probe units 75 are fixed to one block 108. Further, the plurality of probe units 75 are accurately positioned with respect to each other by the fixing pins 109, and the first contact portions 77 are aligned with the electrodes of the specimen. When the fixing pin 109 is locked to the block 108 so as to be disassembled by press fitting or the like, the fixing pin 109 can be pulled out from the block 108 and parts can be replaced in units of the probe unit 75.

  As shown in FIG. 28, the groove 111 of the block 108 has the same width as the maximum thickness of the probe unit 75. Accordingly, the probe unit 75 is fixed to the groove 111 while being in contact with the side wall 117 of the groove 111. Since the side wall 117 is perpendicular to the wafer on which the specimen 6 is formed, the probe unit 75 can be fixed to the block 108 in such a posture that the first contact portion 77 reciprocates in the direction perpendicular to the wafer.

  Since the first contact portion 77, the first spring portion 78, the second contact portion 79, and the second spring portion 80 are thinner than the first guide portion 88 and the second guide portion 83, the probe unit 75 is fitted into the groove 111. A gap 121 is formed between the first contact portion 77, the first spring portion 78, the second contact portion 79, the second spring portion 80, and the side wall 117 of the groove 111. The side wall 117 of the groove 11 guides the moving direction of the first contact portion 77, the first spring portion 78, the second contact portion 79, and the second spring portion 80. The distance between the first contact portion 77, the first spring portion 78, the second contact portion 79, and the second spring portion 80 and the side wall 117, that is, the first contact portion 77, the first spring portion 78, the second contact portion 79, and the first contact portion. The difference in thickness between the two spring portions 80 and the first guide portion 88 and the second guide portion 83 is due to the movement of the first contact portion 77 and the second contact portion 79 and the first spring portion 78 and the second spring portion 80. It is preferable that the thickness is 0.1 μm or more so as not to prevent deformation. Moreover, in order to make the 1st contact part 77 and the electrode 7 of the test substance 6 contact correctly, it is preferable to set it as 100 micrometers or less.

5. Configuration of Diffusion Wiring Section FIG. 29 is a diagram showing the diffusion wiring section. FIG. 30 is a diagram illustrating a method for fixing the probe block and the diffusion wiring portion.
As illustrated in FIG. 29, a plurality of electrodes 46 are provided on the first substrate 123 a of the diffusion wiring portion 74. The electrode 46 is made of, for example, Au. The electrodes 46 are arranged so as to make a one-to-one contact with the second contact portion 79 of the probe unit 75. A spring electrode 122 that contacts the interposer 5 is embedded in the second substrate 123b fixed to the opposite side of the electrode 46 of the first substrate 123a. One end of the spring electrode 122 is in contact with the conductive portion 52 embedded in the first substrate 123a, the other end protrudes from the second substrate 123b, and has a spring at the intermediate portion. The electrode 46 in contact with the second contact portion 79 of the probe unit 75 and the spring electrode 122 in contact with the interposer 5 are electrically connected to each other by a linear connecting line 55 and a conductive portion 52 formed on the first substrate 123a. is doing. The spring electrodes 122 are arranged at a wider interval than the electrodes 46 in a direction orthogonal to the arrangement direction of the electrodes 46. For this reason, even if the arrangement | sequence space | interval of the 2nd contact part 79 of the probe unit 75 is narrow, the diffused wiring part 74 and the interposer 5 can be connected easily.

  As shown in FIG. 30, when the diffusion wiring part 74 is mounted between the legs 114 of the block 108 with screws, adhesive or the like, the second contact part 79 of the probe unit 75 and the electrode 46 of the diffusion wiring part 74 The diffused wiring portion 74 and the probe block 73 are aligned so that they are in one-to-one contact. When the arrangement interval of the second contact portions 79 of the probe unit 75 is wider than the arrangement interval of the first contact portions 77, the electrode 46 and the probe unit of the diffusion wiring portion 74 and the probe unit even if the arrangement interval of the first contact portions 77 is narrow. 75 second contact portions 79 can be easily aligned.

6). Configuration of Assembler FIG. 31 is a diagram showing the assembler.
As shown in FIG. 31, the assembler 72 has a plurality of mounting holes 124 in which the diffusion wiring portions 74 are accommodated, and positioning holes 125 and fixing holes 126 for positioning and fixing the probe block 73 to the assembler 72. . In order to accurately align the plurality of specimens 6 on the wafer and the plurality of probe blocks 73 fixed to the assembler one-on-one, it is preferable that the thermal expansion coefficients of the assembler 72 and the wafer are approximate. . For example, if the wafer is Si, it is preferable to use Si or quartz for the assembler 72. The mounting hole 124, the positioning hole 125, and the fixing hole 126 may be formed by machining, or may be formed using lithography and etching. When lithography and etching are used, it can be formed with high positional accuracy and dimensional accuracy.

7). Attachment of Probe Assembly to Wiring Board FIGS. 32 and 33 are diagrams for explaining the attachment of the probe assembly to the wiring board.
As shown in FIGS. 1 and 32, the assembler 72 is fixed to the wiring board 11 via the interposer 5. The interposer 5 has an electrode 127 connected to the spring electrode 122 of the diffusion wiring part 74. The interposer 5 is attached to the wiring board 11 in a state where the electrodes of the wiring board 11 and the electrodes 127 of the interposer 5 are aligned, and then the assembler 72 is attached on the interposer 5. The assembler 72 may be directly attached to the wiring board 11 and the spring electrode 122 of the diffusion wiring portion 74 may be directly connected to the electrode of the wiring board 11.

  As shown in FIGS. 2 and 33, after the assembler 72 and the interposer 5 are attached to the wiring board 11, the diffusion wiring portion 74 and the probe block 73 are attached to the assembler 72. The diffusion wiring portion 74 is fitted into the mounting hole 124 of the assembler 72, and the protrusion 87 formed on the edge 85 of the probe unit 75 is fitted into the positioning hole 125 of the assembler 72. Then, when the block 108 and the assembler 72 are coupled by the screw 128 inserted into the second fixing hole 113 and the fixing hole 126, the probe block 73 and the diffusion wiring portion 74 are fixed to the assembler 72. By fitting the protrusions 87 of the plurality of probe units 75 into the plurality of positioning holes 125 of the assembler 72, the plurality of probe units 75 can be aligned with the plurality of specimens 6 on the wafer in a one-to-one correspondence. When the protrusion 87 of the probe unit 75 and the positioning hole 125 of the assembler 72 are formed by lithography, the probe unit 75 can be aligned with the accuracy of lithography. The second fixing hole 113 of the block 108 and the fixing hole 126 of the assembler 72 have an inner diameter larger than the outer diameter of the screw 128 so as not to interfere with positioning by the protrusion 87 of the probe unit 75 and the positioning hole 125 of the assembler 72. Have

Next, conduction between the components of the probe card 4 will be described.
FIG. 34 is a schematic diagram for explaining conduction between components of the probe card 4.
As shown in FIG. 34, the first contact portion 77 of the probe unit 75 is electrically connected to the second contact portion 79 having a larger arrangement interval than the first contact portion 77. The second contact portion 79 is brought into contact with the electrode 46 of the diffusion wiring portion 74 and becomes conductive. The electrode 46 is electrically connected to the spring electrodes 122 arranged at a wider interval than the arrangement interval of the electrodes 46. The spring electrode 122 is electrically connected to the electrode of the wiring board 11 via the interposer 5 or directly. The electrode of the wiring board 11 is electrically connected to the external connection electrode 62. Therefore, when a test signal is input to the external connection electrode 62, the test signal is input to the electrode 7 of the specimen 6 through the spring electrode 122, the electrode 46, the second contact portion 79, and the first contact portion 77 whose arrangement intervals are sequentially reduced. .

(Second embodiment)
The second embodiment of the present invention differs from the first embodiment in the configuration of the probe unit. Hereinafter, the probe unit will be described in detail.
1. Configuration of Probe Unit FIG. 35 is a diagram showing a probe unit according to the second embodiment.

  As shown in FIG. 35, in the probe unit 129 according to this embodiment, the first guide portion 88 and the second guide portion 83 are formed as a part of the connecting portion 82. According to this embodiment, since the first guide portion 88 and the second guide portion 83 are formed as a part of the connecting portion 82, the first contact portions 77 of the conducting wires 76 can be arranged at a narrower interval.

36 to 38 are views showing modifications of the probe unit 129.
In the modification shown in FIG. 36, the conducting wire 76 has a C-shape in which both ends protruding from the connecting portion 82 are curved. In this modification, one of the curved protrusions 32 corresponds to the first contact part and the first spring part, and the other 34 of the protrusions corresponds to the second contact part and the second spring part. By flattening the portion protruding from the connecting portion 82 of the conducting wire 76, the moving direction of the portion can be regulated without using the guide portion.

In the modification shown in FIG. 37, both end portions of the conducting wire 76 protrude from the connecting portion 82, and the C-shaped first spring portion 78 and the second spring portion that are convexly curved in the arrangement direction of the conducting wires 76 at the protruding portions. 80 is formed.
In the modification shown in FIGS. 38A1 and 38A2, the first spring portion 78 has a C-shape instead of a bellows shape.

  38 (B1) and 38 (B2), the first spring portion 78 is configured to buckle when the first contact portion 77 comes into contact with the electrode 7 of the specimen 6. It is desirable that the first spring portion 78 has a shape that is slightly convexly bent in a direction in which it is desired to be buckled so as to be buckled and deformed in a predetermined direction.

2. Probe Unit Manufacturing Method Hereinafter, the probe unit manufacturing method will be described with respect to the manufacturing process on the first contact portion side. The other steps are the same as those in the first embodiment described above, and will not be described.
FIG. 39 to FIG. 50 are diagrams showing manufacturing steps on the first contact portion side of the probe unit.

  First, a first sacrificial film 89 is formed on the substrate 90 according to the process shown in FIG. Thereafter, as shown in FIG. 39, a resist film 91 is formed on the first sacrificial film 89 as a first mask having an opening 92 at a portion where the first contact portion 77, the first spring portion 78, and the base portion 81 are formed. To do. Specifically, it conforms to the process shown in FIG.

Next, as shown in FIG. 40, a second sacrificial film 93 is grown in the opening 92. Specifically, it conforms to the process shown in FIG.
Next, as shown in FIG. 41, the first conductor film 94 constituting the first contact part 77, the first spring part 78, and the base part 81 is formed on the second sacrificial film 93 by plating. Specifically, it conforms to the process shown in FIG. The first contact portion 77, the first spring portion 78, and the base portion 81 may be formed of different conductor films, or only the tip of the first contact portion 77 may be formed of another conductor film.

Next, as shown in FIG. 42, the resist film 91 is removed. Specifically, it conforms to the process shown in FIG.
Next, as shown in FIG. 43, a resist film 95 as a second mask having an opening 96 is formed on the first sacrificial film 89. The opening 96 is formed so that the portion corresponding to the first contact portion 77 and the first spring portion 78 of the first conductor film 94 and the first sacrificial film 89 in the vicinity thereof are exposed. A specific forming method is in accordance with the process shown in FIG.

Next, as shown in FIG. 44, a third sacrificial film 97 is grown in the opening 96 by plating. Specifically, it conforms to the process shown in FIG.
Next, as shown in FIG. 45, the resist film 95 is removed. A specific method conforms to the process shown in FIG.

  Next, as shown in FIG. 46, a resist film 130 is formed on the portion corresponding to the gap between the first spring portion 78 and the connecting portion 82 and on the tip portion of the first contact portion 77. The resist film 130 is formed to protect a portion where the connecting portion 82 is not formed. A specific method conforms to the process shown in FIG.

Next, as shown in FIG. 47, the insulating film 104 constituting the connecting portion 82 is formed on the entire substrate 90. For the insulating film 104, alumina, SiO ₂ or the like is used. When the insulating film 104 is formed by using bias sputtering in which a bias is applied to the substrate 90, the recess can be filled with the insulating film 104 even if the unevenness is formed on the substrate 90 by the process before this process, and the flatness is increased. Insulating film 104 excellent in the above can be obtained.

Next, as shown in FIG. 48, grinding, polishing, polishing, CMP and the like are performed from the surface of the insulating film 104 to remove the insulating film 104 until the polished surface reaches the third sacrificial film 97, and the insulating film 104, The surfaces of the resist film 130 and the third sacrificial film 97 are planarized.
Next, as shown in FIG. 49, the remaining resist film 130 is removed. Specifically, it conforms to the process shown in FIG.

  Next, as shown in FIG. 50, when the remaining first sacrificial film 89, second sacrificial film 93, and third sacrificial film 97 are removed, the probe unit 129 is separated from the substrate 90. The first sacrificial film 89, the second sacrificial film 93, and the third sacrificial film are dissolved using an etchant. According to this manufacturing method, the insulating film 104 remains on the base portion 81 of the conducting wire 76, but there is no problem in the operation of the probe unit 129.

(Third embodiment)
The third embodiment of the present invention differs from the first embodiment in that a reinforcing portion is joined to the probe unit. Hereinafter, the probe unit will be described in detail.
1. Configuration of Probe Unit FIG. 51 is a diagram showing a probe unit according to the third embodiment.

As shown in FIG. 51, in the probe unit 133 according to the third embodiment, reinforcing portions 134 are joined to both sides of the probe unit main body 75. The structure of the unit body 75 is the same as that of the probe unit of the first embodiment.
The reinforcing portion 134 includes an insulating film 136 bonded to the probe unit main body 75 and a conductor film 137 bonded to the surface of the insulating film 136 opposite to the probe unit main body 75. A fixing hole 156 corresponding to the fixing hole 86 of the probe unit main body 75 is formed in the reinforcing portion 134. By joining the reinforcing portion 134 to the probe unit main body 75, it is possible to prevent the components of the probe unit main body 75 from being separated.

Since the first contact portion 77 and the first spring portion 78 are thinner than the first guide portion 88, the first contact portion 77 and the first spring portion 78 are not locked by the reinforcing portion 134. The reinforcing part 134 guides the moving direction of the first contact part 77.
Since the second contact portion 79 and the second spring portion 80 are thinner than the second guide portion 83, the second contact portion 79 and the second spring portion 80 are not locked by the reinforcing portion 134. The reinforcing part 134 guides the moving direction of the second contact part 79.

  Note that, as shown in FIG. 52A, the reinforcing portion may be formed only of the insulating film 136. As shown in FIG. 52B, one of the two reinforcing portions 134 joined to the probe unit main body 75 may be composed of the insulating film 136 and the conductor film 137, and the other may be composed of only the insulating film 136. Good. Further, the reinforcing portion 134 may be joined only to one side of the probe unit main body 75. Further, the conductor film 137 of the reinforcing portion 134 may be connected to the ground electrode of the wiring board 11. By connecting the conductor film 137 to the ground, it is possible to improve the high frequency characteristics of the signal passing through the conducting wire 76 of the probe unit main body 75.

2. Probe Unit Manufacturing Method Hereinafter, the probe unit manufacturing method will be described with respect to the manufacturing process on the first contact portion side. The other steps are the same as those in the first embodiment described above, and will not be described.
53 to 60 are diagrams showing manufacturing steps on the first contact portion side of the probe unit.

  First, a first sacrificial film 89 is formed on the substrate 90 according to the process shown in FIG. Thereafter, a conductor film 137a is formed on the first sacrificial film 89 as shown in FIG. The conductor film 137a constitutes one of the two reinforcing portions 134 joined to both sides of the probe unit main body 75. In the case where the conductive film 137a is formed from Ni or the like, after forming the base layer by sputtering, it is formed into a predetermined pattern by performing lithography and plating.

Next, as shown in FIG. 54, an insulating film 136a is formed on the conductor film 137a. Specifically, when an inorganic material such as alumina or SiO ₂ is used, the film is formed by sputtering and then patterned by lithography. When using a resin such as a resist, the resist is applied, patterned by lithography, and hardened by hard baking.

  Next, as shown in FIG. 55, a second sacrificial film 138 is formed on the exposed first sacrificial film 89 by plating. The plating thickness is adjusted so that the height of the second sacrificial film 138 from the substrate 90 is higher than that of the insulating film 136a. The second sacrificial film 138 is made of a metal that can be easily plated and removed. For example, Cu or Sn is used.

Next, as shown in FIG. 56, the surfaces of the second sacrificial film 138 and the insulating film 136a are flattened by grinding, polishing, polishing, CMP, etc., and a flat surface 139 composed of the second sacrificial film 93 and the insulating film 104 is formed. Form.
Next, in accordance with the steps shown in FIGS. 8 to 20, a plurality of films for forming the probe unit main body 75 are formed on the flat surface 139, and then the surface of the work is polished, and the flat surface as shown in FIG. Surface 140 is formed.

  Next, as shown in FIG. 58, an insulating film 136 b is formed on the flat surface 140. The insulating film 136 b constitutes a reinforcing portion 134 that is joined to the opposite side of the reinforcing portion 134 formed at the tip of the probe unit main body 75. In order to easily remove the resist film 130 and the sacrificial films 93 and 97 under the insulating film 136b, an opening 141 is formed in a portion on the first spring portion 78 of the insulating film 136b.

Next, as shown in FIG. 59, a conductor film 137b is formed on the insulating film 136b. An opening 142 corresponding to the opening 141 of the insulating film 137b is also formed in the conductor film 137b.
Next, as shown in FIG. 60, when the resist film 130 is removed with a resist stripping solution such as an alkali solution or an organic solvent, and all the sacrificial films 89, 93, 97, and 138 are dissolved with an etchant, Is separated. Since the openings 141 and 142 are formed in the insulating film 136b and the conductor film 137b, the resist stripping solution and the etchant for dissolving the sacrificial film easily permeate from the openings 141 and 142. Therefore, the resist film 130 and the sacrificial film 89, 93, 97, and 138 can be easily removed.

(Fourth embodiment)
The fourth embodiment of the present invention differs from the second embodiment in that the connecting portion of the probe unit has a ground conductor portion. Hereinafter, the configuration of the probe unit will be described.
FIG. 61 shows a probe unit according to the fourth embodiment of the present invention.

  As shown in FIG. 61, one connecting portion 82 of the probe unit 143 includes two insulating portions 84 and a ground conductor portion 144 formed between the two insulating portions 84 and connected to the ground electrode of the switchboard 11. Composed. Insulating portion 84 is coupled to base portion 81 of conductive wire 76. By adjusting the width of the insulating portion 84, the high frequency characteristics of the signal passing through the conducting wire 76 can be improved. Further, when an insulating film is bonded to both surfaces of the probe unit 143 and a conductor film connected to the ground electrode of the switchboard 11 is bonded to the opposite side of the probe unit 143 of the insulating film, the conductive wire 76 is surrounded by the conductor connected to the ground. The high frequency characteristics of the conducting wire 76 can be further improved.

(Fifth embodiment)
The fifth embodiment of the present invention differs from the third embodiment in that a part of the reinforcing part constitutes a part of the connecting part of the probe unit.
FIG. 62 is a view showing a probe unit according to the fifth embodiment of the present invention.

As shown in FIG. 62, an insulating film 136 constituting a reinforcing portion is formed on both sides of the conducting wire 76 and the insulating portion 84. A ground conductor portion 144 is formed on the side of the insulating film 136 opposite to the conductive wire 76 and the insulating portion 84. The grounding conductor portion 144 and the insulating film 136 constitute a reinforcing portion 134.
The insulating film 136 is divided between the two insulating portions 84 formed between the two conductive wires 76. The ground conductor portion 144 enters between the two insulating portions 84 from between the divided insulating films 136, so that one connecting portion 82 is constituted by the two insulating films 84 and the ground conductor portion 144.

  According to the present embodiment, since the ground conductor portion 144 surrounds the conducting wire 76 via the insulating portion 84 and the insulating film 136, the ground conductor portion 144 reinforces the probe unit and is connected to the ground to connect the conducting wire 76. Improve high frequency characteristics.

(A) is a perspective view which shows the probe card by the 1st Example of this invention, (B) is the elements on larger scale. 1 is a perspective view showing a state where a probe assembly according to a first embodiment of the present invention is disassembled. FIG. It is a perspective view which shows the probe unit and sample by 1st Example of this invention. It is a perspective view which shows the probe unit by 1st Example of this invention. It is a top view which shows the probe unit by the 1st Example of this invention. It is a top view which shows the modification of the probe unit by 1st Example of this invention. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. It is a top view which shows the manufacturing method of the probe unit by the 1st Example of this invention. (A) is a plan view of a block according to the first embodiment of the present invention, (B) is a side view thereof, (C) is a front view thereof, and (D) is a perspective view thereof. It is a perspective view for demonstrating the coupling | bonding method of the probe unit and block by 1st Example of this invention. It is a front view for demonstrating the coupling | bonding method of the probe unit and block by 1st Example of this invention. (A) is a top view which shows the diffusion wiring part by 1st Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional view. It is a perspective view for demonstrating the coupling | bonding method of the probe block and diffusion wiring part by 1st Example of this invention. (A) is a top view which shows the assembler by 1st Example of this invention, (B) is the elements on larger scale, (C) is the cc sectional view taken on the line of (B). 1 is a perspective view showing a state where an assembler is coupled to an interposer according to a first embodiment of the present invention. 1 is a perspective view showing a state in which a probe block is coupled to an assembler according to a first embodiment of the present invention. It is a perspective view for demonstrating conduction | electrical_connection of the component of the probe card by the 1st Example of this invention. It is a top view which shows the probe unit by the 2nd Example of this invention. (A) is a top view which shows the modification of the probe unit by the 2nd Example of this invention, (B) is the bb sectional view taken on the line. It is a top view which shows the modification of the probe unit by the 2nd Example of this invention. (A1), (B1) is a top view which shows the modification of the probe unit by the 2nd Example of this invention. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 2nd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is the front which shows the probe unit by the 3rd example of the present invention, and (B) is the perspective view. It is a front view which shows the modification of the probe unit by the 3rd Example of this invention. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. (A) is a top view which shows the manufacturing method of the probe unit by 3rd Example of this invention, (B) is the bb sectional view taken on the line, (C) is the cc sectional drawing. is there. It is a top view which shows the probe unit by 4th Example of this invention. (A) is a top view which shows the probe unit by 5th Example of this invention, (B) is the bb sectional view taken on the line.

Explanation of symbols

  6 specimens, 7 electrodes, 32 first contact part, 34 second contact part, 75 probe unit, 77 first contact part, 78 first spring part, 79 second contact part, 80 second spring part, 81 base part, 82 Connecting part, 83 Second guide part, 88 First guide part, 90 Substrate, 94 First conductor film, 103 Second conductor film, 129 Probe unit, 133 Probe unit, 143 Probe unit

Claims (15)

A plurality of contact portions that contact the electrode of the specimen;
A plurality of connecting parts connected to the external electrodes;
A plurality of first guide portions for guiding a moving direction of the contact portion;
A plurality of spring portions that are connected to the contact portion and the communication portion, and connect the contact portion and the communication portion to push the contact portion in a direction away from the communication portion;
A plurality of connecting portions that insulate adjacent contact portions and adjacent contact portions and adjacent spring portions and connect adjacent contact portions;
And a probe unit that is integrally formed using lithography.   2. The probe unit according to claim 1, wherein the first guide portion is a conductor connected to the communication portion.   The probe unit according to claim 1, wherein the first guide part is an insulator that is continuous with the connection part.   The probe unit according to any one of claims 1 to 3, wherein a part or all of the interval between the connecting portions has a connecting portion arranged wider than the interval between the contact portions.   The probe unit according to any one of claims 1 to 4, wherein the connecting portion includes a ground conductor portion that is insulated from the contact portion, the communication portion, and the spring portion and is connected to a ground.   An insulating layer is further provided that is fixed across the first guide portions adjacent to each other with the contact portion interposed therebetween, and that opposes the contact portion and the spring portion with the contact portion interposed therebetween and guides a moving direction of the contact portion. The probe unit according to claim 1, wherein the probe unit is characterized.   The probe unit according to claim 6, further comprising a conductor layer fixed to a side opposite to the contact portion of the insulating layer and connected to a ground. The communication unit
A second contact portion in contact with the external electrode;
A base continuous to the spring portion;
A second spring portion that is connected to the second contact portion and the base portion, connects the second contact portion and the base portion, and pushes the second contact portion in a direction away from the base portion;
The probe unit according to claim 1, further comprising a plurality of second guide portions that guide a moving direction of the second contact portion.   The probe unit according to claim 1, wherein the connecting portion is formed by sputtering of ceramic.   The probe unit according to claim 1, wherein the connecting portion is formed by curing a resin. A contact portion that contacts the electrode of the specimen, a contact portion that contacts an external electrode, and the contact portion that is connected to the contact portion and the contact portion to conduct the contact portion and the contact portion in a direction away from the contact portion. A plurality of spring portions that press the first guide portion that guides the moving direction of the contact portion, and the adjacent contact portions and the adjacent contact portions and the adjacent spring portions are adjacent to each other. Forming a plurality of connecting portions for connecting the connecting portions to each other on the substrate using lithography,
Removing the substrate to obtain a probe unit comprising the contact portion, the spring portion, the first guide portion, and the connecting portion coupled together;
A method for manufacturing a probe unit comprising: Forming a first mask on the substrate having a first opening corresponding to the contact portion;
Forming the contact portion in the first opening;
Removing the first mask;
A second mask having a second opening for forming a first sacrificial film in a portion corresponding to a gap between the contact portion and the first guide portion is formed on the substrate from which the first mask has been removed. Stages,
Forming the first sacrificial film in the second opening;
Removing the second mask;
Forming a third mask having a third opening corresponding to the first guide portion and thicker than the second mask on the substrate from which the second mask has been removed;
Forming the first guide part on the substrate thicker than the contact part in the third opening;
Removing the first sacrificial film, the third mask and the substrate after forming the first guide part, and obtaining the probe unit;
The method of manufacturing a probe unit according to claim 11, comprising: Forming a first mask on the substrate having a first opening corresponding to the contact portion;
Forming a first sacrificial film in the first opening;
Forming the contact on the first sacrificial film in the second opening;
Removing the first mask;
Forming a second mask having a second opening for exposing the contact portion and a portion corresponding to a gap between the contact portion and the first guide portion on the substrate from which the first mask has been removed; ,
Forming a second sacrificial film directly covering the contact portion in the second opening;
Removing the second mask;
Forming a third mask having a third opening corresponding to the first guide portion and thicker than the second mask on the substrate from which the second mask has been removed;
Forming the first guide part on the substrate thicker than the contact part in the third opening;
Flattening the surface of the workpiece on which the first guide portion is formed so that the first sacrificial film remains on the contact portion with a predetermined thickness;
Removing the first sacrificial film, the second sacrificial film, the second sacrificial film, and the third mask after the surface of the workpiece is planarized, and obtaining the probe unit;
The method of manufacturing a probe unit according to claim 11, comprising: Forming a conductor layer on the substrate;
Forming an insulating layer on the conductor layer;
Forming the contact portion, the spring portion, the first guide portion, and the connecting portion on the insulating layer;
In the step of obtaining the probe unit, a probe unit including the contact portion, the spring portion, the first guide portion, the connecting portion, the conductor layer, and the insulating layer coupled together is obtained. The manufacturing method of the probe unit as described in any one of Claims 11-13. Further comprising forming a third sacrificial layer directly on the substrate;
In the step of removing the substrate, the contact portion, the spring portion, the first guide portion, and the connecting portion formed on the third sacrificial film are removed by removing the third sacrificial film. It isolate | separates from, The manufacturing method of the probe unit as described in any one of Claims 11-14 characterized by the above-mentioned.

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