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JP2006041356A - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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Publication number
JP2006041356A
JP2006041356A JP2004221782A JP2004221782A JP2006041356A JP 2006041356 A JP2006041356 A JP 2006041356A JP 2004221782 A JP2004221782 A JP 2004221782A JP 2004221782 A JP2004221782 A JP 2004221782A JP 2006041356 A JP2006041356 A JP 2006041356A
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Prior art keywords
substrate
processing apparatus
substrate processing
liquid supply
cooling device
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Japanese (ja)
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Akihiko Nakamura
彰彦 中村
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2004221782A priority Critical patent/JP2006041356A/en
Priority to KR1020050068858A priority patent/KR20060048853A/en
Priority to CNB2005101038153A priority patent/CN100433247C/en
Priority to TW094125914A priority patent/TW200610092A/en
Publication of JP2006041356A publication Critical patent/JP2006041356A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing equipment in which, in matching with the processing speed of a plasma processing apparatus, processing speed in other processing equipment is also increased. <P>SOLUTION: In the substrate processing equipment, a pair of cassettes 1 and 1, a carry-in and carry-out device 2, a pair of cleaning devices (liquid-feed devices) 3 and 3, a handling robot 4, a cooling device 5, a pair of load lock chambers 6 and 6, and a pair of ashing devices (plasma processing apparatuses) 7 and 7, are arranged. The cooling device 5 comprises a cool plate 51 in which a cooling medium circulates, and a lifting pin 52 which mounts a substrate W on the cool plate 51. Especially, the cool plate 51 is to contain two (upper and lower) tiers. By inserting the lifting pin 52 through an through hole 53 formed in each cool plate 51 fitting each lifting pin 52 on a common support member 54, and driving a cylinder unit to lift the support member 54; two substrates W are lifted simultaneously. Further, the cleaning device 3 comprising a cup 31 and a chuck 2 is also multistage type similar to the cooling device 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は半導体ウェーハ等の基板に対しアッシングなどのプラズマ処理から洗浄などの液体処理に至るまでの一連の処理を行なう基板処理装置に関する。   The present invention relates to a substrate processing apparatus for performing a series of processing from plasma processing such as ashing to liquid processing such as cleaning on a substrate such as a semiconductor wafer.

特許文献１〜３に開示されるように、半導体ウェーハやガラス基板などの基板に対し、アッシングやエッチングなどのプラズマ処理を行った後、冷却や洗浄をプラズマ処理装置の近傍に配置した装置によっておこなっている。   As disclosed in Patent Documents 1 to 3, after a plasma process such as ashing or etching is performed on a substrate such as a semiconductor wafer or a glass substrate, cooling and cleaning are performed by an apparatus disposed in the vicinity of the plasma processing apparatus. ing.

即ち、特許文献１には、搬送受渡し用ロボットの周囲に、ロードロック室とプラズマ処理装置としてエッチング装置及びアッシング装置を配置し、更にこれらから離れた箇所に洗浄装置を配置したレイアウトが示されている。   That is, Patent Document 1 shows a layout in which an etching device and an ashing device are arranged as a load lock chamber and a plasma processing device around a transfer robot, and a cleaning device is further arranged away from these. Yes.

特許文献２には、インデクサロボットとプロセッサロボットを互いに直交する方向に移動可能に設け、インデクサロボットの移動方向に沿ってカセットを配置し、プロセッサロボットの移動方向に沿ってプラズマ処理装置及び複数の液相処理装置を配置したレイアウトが示されている。   In Patent Document 2, an indexer robot and a processor robot are provided so as to be movable in directions orthogonal to each other, a cassette is arranged along the movement direction of the indexer robot, and a plasma processing apparatus and a plurality of liquids are arranged along the movement direction of the processor robot. A layout in which phase processing devices are arranged is shown.

特許文献３には、搬送ロボットの周囲にアッシング用のプラズマ処理装置、冷却装置、表面スクラバー及び裏面スクラバーを配置したレイアウトが開示されている。
特開平１１−００３９２５号公報 特開２００３−１１５５２５号公報 特開２００３−２５７９４５号公報 Patent Document 3 discloses a layout in which a plasma processing device for ashing, a cooling device, a front surface scrubber, and a back surface scrubber are arranged around a transport robot.
JP-A-11-003925 JP 2003-115525 A JP 2003-257945 A

上述した特許文献１〜３に開示される装置によれば、アッシングなどのプラズマ処理から洗浄に至るまでの処理を連続して行なうことが出来る。しかしながら、
アッシングやエッチングに要する時間は、冷却や洗浄に要する時間よりも通常短いため、処理全体としてのスループットは最善とは言えない。 According to the apparatus disclosed in Patent Documents 1 to 3 described above, processing from plasma processing such as ashing to cleaning can be performed continuously. However,
Since the time required for ashing and etching is usually shorter than the time required for cooling and cleaning, the throughput of the entire process is not the best.

上記課題を解決すべく本発明に係る基板処理装置は、基板に対しプラズマ処理を施すプラズマ処理装置と、このプラズマ処理が終了した基板を冷却する冷却装置と、冷却後の基板に洗浄液等を供給する液体供給装置とを備え、且つ前記冷却装置および液体供給装置を多段式とした。   In order to solve the above-described problems, a substrate processing apparatus according to the present invention includes a plasma processing apparatus that performs plasma processing on a substrate, a cooling device that cools the substrate after the plasma processing, and supplies a cleaning solution or the like to the cooled substrate. And the cooling device and the liquid supply device are multistage.

前記冷却装置としては、複数段のクールプレートと、これら複数段のクールプレートに対し同時に基板を昇降動せしめる昇降ピンを備えた構成が考えられる。   As the cooling device, a configuration including a plurality of stages of cool plates and lift pins for moving the substrate up and down simultaneously with respect to the plurality of stages of cool plates can be considered.

前記液体供給装置としては、各段毎に液体供給ノズル、基板の周囲を囲むカップ及び基板を保持して回転せしめるチャックを備え、前記カップとチャックは分離され、全てのカップは一体的に昇降可能となるように昇降部材に支持され、また全てのチャックは固定部材に支持されるとともに上下方向に配置された駆動軸から回転駆動力が分岐して伝達される構成が考えられる。   The liquid supply device includes a liquid supply nozzle for each stage, a cup surrounding the substrate and a chuck for holding and rotating the substrate, the cup and the chuck are separated, and all the cups can be moved up and down integrally. A configuration is conceivable in which all the chucks are supported by a fixed member and the rotational driving force is branched and transmitted from a drive shaft arranged in the vertical direction.

尚、各装置のレイアウトとしては、搬送ロボットを中心に配置し、この搬送ロボットの周囲に前記プラズマ処理装置、冷却装置及び液体供給装置を配置するのが好ましく、更に本発明に係る基板処理装置はアッシング処理に特に有効である。   As the layout of each apparatus, it is preferable that the transfer robot is arranged at the center, and the plasma processing apparatus, the cooling apparatus and the liquid supply apparatus are arranged around the transfer robot, and the substrate processing apparatus according to the present invention is further provided. This is particularly effective for ashing processing.

本発明によれば、プラズマ処理装置と、このプラズマ処理が終了した基板を冷却する冷却装置と、冷却後の基板に洗浄液等を供給する液体供給装置とを備えた基板処理装置において、プラズマ処理よりもタクトタイムの遅い冷却および液体供給を行なう装置を多段式としたので、占有面積をそのままにして、最も処理速度の速いプラズマ処理装置にタクトタイムを合わせることができ、最速のスループットを実現することができる。   According to the present invention, in a substrate processing apparatus including a plasma processing apparatus, a cooling apparatus that cools the substrate after the plasma processing, and a liquid supply apparatus that supplies a cleaning liquid or the like to the cooled substrate, In addition, since the cooling and liquid supply equipment with slow tact time is multistage, the tact time can be adjusted to the fastest plasma processing equipment while maintaining the occupied area, and the fastest throughput is realized. Can do.

以下に本発明の実施例を添付図面に基づいて説明する。図１は本発明に係る基板処理装置の全体平面図であり、図の左側から右側に向かって順に、一対のカセット１，１、搬入搬出装置２、一対の洗浄装置（液体供給装置）３，３、ハンドリングロボット４、冷却装置５、一対のロードロック室６，６及び一対のアッシング装置（プラズマ処理装置）７，７が配置されている。   Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is an overall plan view of a substrate processing apparatus according to the present invention. A pair of cassettes 1, 1, a carry-in / carry-out device 2, a pair of cleaning devices (liquid supply devices) 3, in order from the left side to the right side of the figure. 3, a handling robot 4, a cooling device 5, a pair of load lock chambers 6 and 6, and a pair of ashing devices (plasma processing devices) 7 and 7 are arranged.

前記搬入搬出装置２はレール２１に３軸ロボット２２が走行可能に取り付けられ、一方のカセット１内の未処理基板Ｗを取り出しストックポイント４’を介してハンドリングロボット４に受け渡すとともに、処理済の基板Ｗをハンドリングロボット４からストックポイント４’を介して受取り、他方のカセット１に受け渡す。   The carry-in / carry-out device 2 is attached to a rail 21 so that a three-axis robot 22 can travel. The unprocessed substrate W in one cassette 1 is taken out and transferred to a handling robot 4 through a stock point 4 ′ and processed. The substrate W is received from the handling robot 4 via the stock point 4 ′ and transferred to the other cassette 1.

前記ハンドリングロボット４は３６０°回転可能な基台上に、伸縮自在なアーム４ａを２本備え、前記３軸ロボット２２から受け取った未処理基板Ｗを一対のロードロック室６のうちの一方のロードロック室６内に配置されているロボット６１に受け渡す。   The handling robot 4 has two extendable arms 4a on a 360 ° rotatable base, and the unprocessed substrate W received from the three-axis robot 22 is loaded in one of the pair of load lock chambers 6. Transfer to the robot 61 arranged in the lock chamber 6.

そして、ロボット６１はロードロック室６の背面側に配置されるアッシング装置７内に未処理基板Ｗを搬入する。アッシング装置７は図２に示すように、ベース７１にテーブル７２が下方から臨む開口７３を形成し，この開口７３を覆うようにベース７１上にチャンバー７４を固着し、このチャンバー７４の周囲に高周波電源に接続される誘導コイル７５を巻回し、この誘導コイル７５とチャンバー７４との間に静電シールド７６を設け、更にチャンバー７４の天井部には反応ガス導入口７７をつなげている。   Then, the robot 61 carries the unprocessed substrate W into the ashing device 7 disposed on the back side of the load lock chamber 6. As shown in FIG. 2, the ashing device 7 forms an opening 73 in which a table 72 faces from below in a base 71, a chamber 74 is fixed on the base 71 so as to cover the opening 73, and a high frequency is formed around the chamber 74. An induction coil 75 connected to a power source is wound, an electrostatic shield 76 is provided between the induction coil 75 and the chamber 74, and a reaction gas inlet 77 is connected to the ceiling of the chamber 74.

上記アッシング装置７内でアッシング処理された基板Ｗは２００℃程度まで温度が上昇しているので、直ちに洗浄すると、温度分布のばらつきが生じる。そこで、前記ロボット６１及びハンドリングロボット４によって処理後の基板Ｗを冷却装置５に送り込んで、強制的に室温（２３℃前後）まで冷却する。   Since the temperature of the substrate W subjected to the ashing process in the ashing device 7 has risen to about 200 ° C., variation in temperature distribution occurs when it is immediately cleaned. Therefore, the processed substrate W is sent to the cooling device 5 by the robot 61 and the handling robot 4 to forcibly cool to room temperature (around 23 ° C.).

冷却装置５は図３に示すように、冷媒が循環するクールプレート５１とこのクールプレート５１に基板Ｗを載置する昇降ピン５２を備えている。特にこの実施例にあってはクールプレート５１を上下２段とし、各クールプレート５１に形成した貫通穴５３に昇降ピン５２を挿通するとともに、各昇降ピン５２を共通の支持部材５４に取り付け、図示しないシリンダユニットを駆動して支持部材５４を昇降せしめることで、２枚の基板Ｗを同時に昇降動せしめるようにしている。   As shown in FIG. 3, the cooling device 5 includes a cool plate 51 in which a coolant circulates and elevating pins 52 on which the substrate W is placed on the cool plate 51. Particularly in this embodiment, the cool plate 51 has two upper and lower stages, the elevating pins 52 are inserted into the through holes 53 formed in each cool plate 51, and the elevating pins 52 are attached to a common support member 54. The cylinder unit that is not driven is driven to move the support member 54 up and down, so that the two substrates W can be moved up and down simultaneously.

つまり、本実施例の場合、一対のアッシング装置７，７にて２枚の基板Ｗを同時に処理するので、冷却装置５においても２枚の基板Ｗを同時に冷却するようにしている。   That is, in the case of the present embodiment, since the two substrates W are simultaneously processed by the pair of ashing devices 7, 7, the two substrates W are also simultaneously cooled by the cooling device 5.

しかしながら、前記したように冷却処理に必要な時間はアッシング処理に要する時間よりも長い。そこで、全体効率を考慮すると、図４（ａ）に示すように、クールプレート５１を上下４段とし、２枚づつ合計４枚を同時に或いは若干時間をずらせて冷却処理する構成、或いは同図（ｂ）に示すように、クールプレート５１を上下６段とし、２枚づつ合計６枚を同時に或いは若干時間をずらせて冷却処理する構成も可能である。   However, as described above, the time required for the cooling process is longer than the time required for the ashing process. Therefore, in consideration of the overall efficiency, as shown in FIG. 4A, the cooling plate 51 is arranged in four upper and lower stages, and a cooling process is performed on two sheets at the same time, or a total of four sheets at the same time or with a slight time shift, or FIG. As shown in b), the cooling plate 51 can be arranged in six stages, and a cooling process can be performed on two sheets at the same time, or a total of six sheets at the same time or slightly shifted in time.

次に液体処理装置（液体供給装置）３の構造を図５〜図７に基づいて説明する。ここで、図５は液体処理装置の側面図、図６は液体処理装置の拡大断面図、図７は液処理装置の別実施例を示す図６と同様の図である。   Next, the structure of the liquid processing apparatus (liquid supply apparatus) 3 will be described with reference to FIGS. 5 is a side view of the liquid processing apparatus, FIG. 6 is an enlarged sectional view of the liquid processing apparatus, and FIG. 7 is a view similar to FIG. 6 showing another embodiment of the liquid processing apparatus.

液体処理装置３は基板Ｗの周囲を囲むカップ３１と基板Ｗを保持して回転せしめるチャック３２とからなり、カップ３１はチャック３２に対して昇降可能とされている。尚、カップ３１の数は２つとしたが前記クールプレートと同様にこれ以上でもよい。   The liquid processing apparatus 3 includes a cup 31 surrounding the substrate W and a chuck 32 that holds and rotates the substrate W, and the cup 31 can be moved up and down with respect to the chuck 32. Although the number of cups 31 is two, it may be more than the same as the cool plate.

各カップ３１は昇降部材３３に支持されている。昇降部材３３はシリンダユニット３４の駆動によって支柱３５に沿って昇降動する。また昇降部材３３には水平方向のアーム３６を設け、このアーム３６に前記カップ３１を固着している。また、アーム３６には洗浄液供給ノズル３７が取り付けられ、この洗浄液供給ノズル３７の先端は前記チャック３２の中心と一致している。尚、洗浄液供給ノズル３７はアーム３６ではなく、チャック３２を固定している側の部材に固定してもよい。   Each cup 31 is supported by an elevating member 33. The elevating member 33 moves up and down along the column 35 by driving the cylinder unit 34. The elevating member 33 is provided with a horizontal arm 36, and the cup 31 is fixed to the arm 36. A cleaning liquid supply nozzle 37 is attached to the arm 36, and the tip of the cleaning liquid supply nozzle 37 coincides with the center of the chuck 32. The cleaning liquid supply nozzle 37 may be fixed not to the arm 36 but to a member on the side where the chuck 32 is fixed.

カップ３１の上端開口には上方に伸びる筒状部３８が一体的に形成され、カップ３１内には温調部材３９が配置され、またカップ３１の底面にはドレイン穴４０が開口し、このドレイン穴４０に図示しない廃液パイプが接続されている。   A cylindrical portion 38 extending upward is integrally formed at the upper end opening of the cup 31, a temperature adjustment member 39 is disposed in the cup 31, and a drain hole 40 is opened on the bottom surface of the cup 31. A waste liquid pipe (not shown) is connected to the hole 40.

一方、チャック３２は固定部材４１に支持されている。固定部材４１は上下方向の空洞状支柱４２と水平方向に伸びる空洞状アーム４３からなり、空洞状支柱４２内には図示しないモータにて回転せしめられる駆動軸４４が上下方向に配置されている。   On the other hand, the chuck 32 is supported by the fixing member 41. The fixing member 41 is composed of a vertical column 42 and a hollow arm 43 extending in the horizontal direction. A drive shaft 44 that is rotated by a motor (not shown) is arranged in the vertical column 42 in the vertical direction.

駆動軸４４は各段ごとに分割され、分割された駆動軸４４はユニバーサルジョイント４５にて連結され、且つベアリング４６で回転自在に支持されている。また、分割された駆動軸４４には駆動プーリ４７が固着され、チャック３２の軸には被動プーリ４８が固着され、これら駆動プーリ４７と被動プーリ４８間に張設されたタイミングベルト４９が前記水平アーム４３内に収納されている。   The drive shaft 44 is divided for each stage, and the divided drive shafts 44 are connected by a universal joint 45 and are rotatably supported by bearings 46. A drive pulley 47 is fixed to the divided drive shaft 44, a driven pulley 48 is fixed to the shaft of the chuck 32, and a timing belt 49 stretched between the drive pulley 47 and the driven pulley 48 is provided in the horizontal direction. Housed in the arm 43.

以上において、シリンダユニット３４を縮めて上下のカップ３１を同時に１５ｍｍ程度下降せしめる。この操作によりチャック３２の上端面がカップ３１の上端よりも若干上になる。この状態でチャック３２に基板Ｗを載置し吸引固着する。   In the above, the cylinder unit 34 is contracted and the upper and lower cups 31 are simultaneously lowered by about 15 mm. By this operation, the upper end surface of the chuck 32 is slightly above the upper end of the cup 31. In this state, the substrate W is placed on the chuck 32 and fixed by suction.

この後、シリンダユニット３４を伸ばし上下のカップ３１を一体的に上昇させ、基板Ｗをカップ３１内に収める。この状態で、洗浄液供給ノズル３７から基板Ｗの表面中央に現像液を滴下するとともにモータ（図示せず）を駆動し、駆動軸４４およびタイミングベルト４９を介してチャック３２（基板Ｗ）を回転させ、洗浄液を基板Ｗの表面に行き渡らせる。   Thereafter, the cylinder unit 34 is extended and the upper and lower cups 31 are integrally raised, and the substrate W is stored in the cup 31. In this state, the developer is dropped from the cleaning liquid supply nozzle 37 onto the center of the surface of the substrate W and a motor (not shown) is driven to rotate the chuck 32 (substrate W) via the drive shaft 44 and the timing belt 49. The cleaning liquid is spread over the surface of the substrate W.

図７は別実施例を示す図であり、この実施例は前記筒状部３８と温調部材３９とを省略し、その代わりチャック３２の外周部に整流板３２ａを設けている。   FIG. 7 is a view showing another embodiment. In this embodiment, the tubular portion 38 and the temperature adjusting member 39 are omitted, and a rectifying plate 32 a is provided on the outer peripheral portion of the chuck 32 instead.

本発明に係る基板処理装置の全体平面図Overall plan view of a substrate processing apparatus according to the present invention 本発明に係る基板処理装置の一部を構成するプラズマ処理装置を示す図The figure which shows the plasma processing apparatus which comprises some substrate processing apparatuses based on this invention. 本発明に係る基板処理装置の一部を構成する冷却装置の側面図The side view of the cooling device which comprises some substrate processing apparatuses concerning the present invention （ａ）及び（ｂ）は冷却装置の別実施例の側面図(A) And (b) is a side view of another Example of a cooling device. 本発明に係る基板処理装置の一部を構成する液体処理装置の側面図The side view of the liquid processing apparatus which comprises some substrate processing apparatuses which concern on this invention 液体処理装置の拡大断面図Enlarged sectional view of liquid processing equipment 液処理装置の別実施例を示す図６と同様の図The same figure as FIG. 6 which shows another Example of a liquid processing apparatus.

符号の説明Explanation of symbols

１…カセット
２…搬入搬出装置
２１…レール
２２…３軸ロボット
３…洗浄装置（液体供給装置）
３１…カップ
３２…チャック
３２ａ…整流板
３３…昇降部材
３４…シリンダユニット
３５…支柱
３６…水平方向のアーム
３７…洗浄液供給ノズル
３８…筒状部
３９…温調部材
４０…ドレイン穴
４１…固定部材
４２…空洞状支柱
４３…空洞状アーム
４４…駆動軸
４５…ユニバーサルジョイント
４６…ベアリング
４７…駆動プーリ
４８…被動プーリ
４９…タイミングベルト
４…ハンドリングロボット
４ａ…アーム
４’…ストックポイント
５…冷却装置
５１…クールプレート
５２…昇降ピン
５３…貫通穴
５４…支持部材
６…ロードロック室
６１…ロードロック室内のロボット
７…アッシング装置（プラズマ処理装置）
７１…ベース
７２…テーブル
７３…開口
７４…チャンバー
７５…誘導コイル
７６…静電シールド
７７…反応ガス導入口、
Ｗ…基板。 DESCRIPTION OF SYMBOLS 1 ... Cassette 2 ... Carry in / out apparatus 21 ... Rail 22 ... 3-axis robot 3 ... Cleaning apparatus (liquid supply apparatus)
DESCRIPTION OF SYMBOLS 31 ... Cup 32 ... Chuck 32a ... Rectifying plate 33 ... Elevating member 34 ... Cylinder unit 35 ... Support | pillar 36 ... Horizontal arm 37 ... Cleaning liquid supply nozzle 38 ... Cylindrical part 39 ... Temperature control member 40 ... Drain hole 41 ... Fixing member DESCRIPTION OF SYMBOLS 42 ... Hollow support 43 ... Hollow arm 44 ... Drive shaft 45 ... Universal joint 46 ... Bearing 47 ... Drive pulley 48 ... Driven pulley 49 ... Timing belt 4 ... Handling robot 4a ... Arm 4 '... Stock point 5 ... Cooling device 51 ... Cool plate 52 ... Elevating pin 53 ... Through hole 54 ... Support member 6 ... Load lock chamber 61 ... Robot 7 in the load lock chamber ... Ashing device (plasma processing device)
71 ... Base 72 ... Table 73 ... Opening 74 ... Chamber 75 ... Inductive coil 76 ... Electrostatic shield 77 ... Reaction gas inlet,
W: Substrate.

Claims (5)

基板に対しプラズマ処理を施すプラズマ処理装置と、このプラズマ処理が終了した基板を冷却する冷却装置と、冷却後の基板に洗浄液等を供給する液体供給装置とを備えた基板処理装置において、前記冷却装置および液体供給装置は多段式であることを特徴とする基板処理装置。 A substrate processing apparatus comprising: a plasma processing apparatus that performs plasma processing on a substrate; a cooling device that cools the substrate after the plasma processing; and a liquid supply device that supplies a cleaning liquid or the like to the cooled substrate. A substrate processing apparatus, wherein the apparatus and the liquid supply apparatus are multistage. 請求項１に記載の基板処理装置において、前記冷却装置は複数段のクールプレートと、これら複数段のクールプレートに対し同時に基板を昇降動せしめる昇降ピンを備えていることを特徴とする基板処理装置。 2. The substrate processing apparatus according to claim 1, wherein the cooling device includes a plurality of stages of cool plates and lift pins for moving the substrate up and down simultaneously with respect to the plurality of stages of cool plates. . 請求項１に記載の基板処理装置において、前記液体供給装置は、各段毎に液体供給ノズル、基板の周囲を囲むカップ及び基板を保持して回転せしめるチャックを備え、前記カップとチャックは分離され、全てのカップは一体的に昇降可能となるように昇降部材に支持され、また全てのチャックは固定部材に支持されるとともに上下方向に配置された駆動軸から回転駆動力が分岐して伝達されることを特徴とする基板処理装置。 2. The substrate processing apparatus according to claim 1, wherein the liquid supply device includes a liquid supply nozzle, a cup surrounding the periphery of the substrate, and a chuck that holds and rotates the substrate for each stage, and the cup and the chuck are separated. All the cups are supported by the elevating member so that they can be moved up and down integrally, and all the chucks are supported by the fixed members and the rotational driving force is branched and transmitted from the drive shaft arranged in the vertical direction. A substrate processing apparatus. 請求項１乃至請求項３に記載の基板処理装置において、この基板処理装置は搬送ロボットが中心に配置され、この搬送ロボットの周囲に前記プラズマ処理装置、冷却装置及び液体供給装置が配置されていることを特徴とする基板処理装置。 4. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is arranged around a transfer robot, and the plasma processing apparatus, the cooling device, and the liquid supply device are arranged around the transfer robot. A substrate processing apparatus. 請求項１乃至請求項４に記載の基板処理装置において、前記プラズマ処理はアッシング処理であることを特徴とする基板処理装置。
5. The substrate processing apparatus according to claim 1, wherein the plasma process is an ashing process.
JP2004221782A 2004-07-29 2004-07-29 Substrate processing equipment Pending JP2006041356A (en)

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CNB2005101038153A CN100433247C (en) 2004-07-29 2005-07-29 Substrate processing equipment
TW094125914A TW200610092A (en) 2004-07-29 2005-07-29 Substrate treatment apparatus

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101677133B1 (en) * 2015-12-09 2016-11-21 국제엘렉트릭코리아 주식회사 Boat and cluster equipment, substrate treating apparatus of furnace type including the same

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KR100870119B1 (en) * 2007-03-08 2008-11-25 세메스 주식회사 Substrate processing apparatus and method
CN113097047B (en) * 2021-03-10 2022-04-22 长江存储科技有限责任公司 Ashing apparatus and ashing method
JP2023032647A (en) * 2021-08-27 2023-03-09 株式会社Kokusai Electric Substrate processing device, manufacturing method for semiconductor device, and recording medium

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JP2000183019A (en) * 1998-12-21 2000-06-30 Dainippon Screen Mfg Co Ltd Multistage substrate-processing device
JP2000336482A (en) * 1999-05-28 2000-12-05 Sony Corp Film deposition and film deposition system
JP2001110313A (en) * 1999-10-08 2001-04-20 Dainippon Printing Co Ltd Baking treatment apparatus
JP3503606B2 (en) * 2001-03-28 2004-03-08 松下電器産業株式会社 Plasma cleaning equipment
JP2003224174A (en) * 2002-01-30 2003-08-08 Seiko Epson Corp Semiconductor manufacturing apparatus and control method
JP2003115525A (en) * 2002-07-30 2003-04-18 Dainippon Screen Mfg Co Ltd Substrate treatment apparatus
JP2004200419A (en) * 2002-12-18 2004-07-15 Fujitsu Ltd Wafer cleaning device and coating device having cleaning function

Cited By (1)

* Cited by examiner, † Cited by third party
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