JP2005281401A - Semiconductor encapsulation material, its manufacturing process, and manufacturing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor encapsulation material which, with the suppressed moisture absorption, excels in storage stability and resin curability. <P>SOLUTION: The manufacturing process of the semiconductor encapsulation material has the kneading step wherein the mixture of raw materials of the semiconductor encapsulation material is molten/kneaded to obtain a kneaded mass, the cooling step wherein the above kneaded mass is cooled to obtain a solidified product, and the pulverizing step wherein the above solidified product is pulverized to obtain a pulverent. In the process, during or after the pulverizing step, the above pulverent is brought into contact with dry air. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor sealing material, a manufacturing method thereof, and a manufacturing apparatus, and more particularly to a semiconductor sealing material in which deterioration of characteristics due to moisture absorption is suppressed, a manufacturing method thereof, and a manufacturing apparatus.

  The semiconductor sealing material applied to the semiconductor device includes, for example, a predetermined amount of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and the like, and after uniformly mixing, melt-kneading, cooling and solidifying, It is manufactured by pulverizing to a size (for example, refer to Patent Document 1).

  In recent years, in such a semiconductor sealing material, it has been performed to increase the filling material by using a low softening point resin. However, since such a low softening point resin is easy to absorb moisture, the semiconductor sealing material tends to absorb more moisture.

  When moisture absorption of the semiconductor encapsulating material increases, water molecules adhere to the curing accelerator in the semiconductor sealing material and the catalytic activity is lost, and the progress of the curing reaction is hindered by the lack of the absolute amount of the curing accelerator that should function originally. It is done. For this reason, when the semiconductor sealing material is molded, the mechanical strength of the runner part and the molded product may be lowered.

In order to suppress such a decrease in curability due to moisture absorption, for example, an environment for manufacturing a semiconductor sealing material is set to a low temperature and low humidity, and the semiconductor sealing material is manufactured in an environment that does not absorb moisture. Yes.
JP 2003-327666 A

  However, in recent years, in order to achieve further higher filling of the semiconductor sealing material, a resin having a lower softening point has been used. For this reason, the storage stability fall by the moisture absorption of a semiconductor sealing material and the sclerosis | hardenability fall are more remarkable. In particular, in summer, it is difficult to make the manufacturing environment sufficiently low temperature and low humidity due to high temperature and high humidity, and it is difficult to suppress a decrease in storage stability and a decrease in curability of the semiconductor sealing material.

  If the environment for manufacturing the semiconductor sealing material is to be performed in a vacuum, it becomes possible to suppress the moisture absorption of such a semiconductor sealing material, but it is necessary for such facilities, incidental facilities, and installation work. The cost required is enormous and difficult to implement.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor sealing material in which a decrease in storage stability and a decrease in curability due to moisture absorption are suppressed. Moreover, this invention aims at providing the manufacturing method and manufacturing apparatus for manufacturing the semiconductor sealing material by which the characteristic fall by moisture absorption was suppressed.

  The method for producing a semiconductor sealing material of the present invention includes a kneading step for obtaining a kneaded product by melting and kneading a raw material mixture of the semiconductor sealing material, a cooling step for cooling the kneaded product to obtain a pulverized solidified product, A method for producing a semiconductor encapsulating material comprising a pulverization step of pulverizing the solidified product to obtain a pulverized product, wherein the pulverized product is contacted with dry air during or after the pulverization step. To do.

  Another method for manufacturing a semiconductor sealing material of the present invention is to melt and knead, cool and pulverize a raw material mixture of the semiconductor sealing material, and bring dry air into contact with the semiconductor sealing material which has absorbed moisture after the pulverization. It is characterized by that.

  The dry air used in the method for producing a semiconductor sealing material of the present invention is preferably such that the relative humidity at 20 ° C. is 20% RH or less.

  The semiconductor sealing material manufacturing apparatus of the present invention includes a pulverizer for pulverizing a solidified product obtained by melt-kneading and cooling a raw material mixture of a semiconductor sealing material, and a dry air supply unit for supplying dry air to the pulverizer. It is characterized by having.

  Another apparatus for manufacturing a semiconductor sealing material of the present invention is a dry air introduction unit for containing a semiconductor sealing material obtained by melting, kneading, cooling, and pulverizing a raw material mixture of a semiconductor sealing material and introducing dry air. And a dry air supply unit that supplies dry air to the dry air introduction unit.

  The semiconductor sealing material of the present invention is a semiconductor sealing material obtained by melting, kneading, cooling, and pulverizing a raw material mixture of a semiconductor sealing material, and is manufactured by the method for manufacturing a semiconductor sealing material as described above. It is characterized by.

  In the present invention, a kneading step for melting and kneading the raw material mixture of the semiconductor sealing material to obtain a kneaded product, a cooling step for cooling the kneaded product to obtain a solidified product, and a pulverizing step for pulverizing the solidified product to obtain a crushed product In the method for producing a semiconductor sealing material having the above, a semiconductor excellent in storage stability, curability and the like by suppressing moisture absorption of the semiconductor sealing material by bringing dry air into contact with the pulverized product during or after the pulverization step It becomes possible to provide a sealing material.

  In the present invention, the raw material mixture of the semiconductor sealing material is melt-kneaded, cooled, and pulverized, and moisture is absorbed from the absorbed semiconductor sealing material by bringing dry air into contact with the semiconductor sealing material that has absorbed moisture after the pulverization. It is possible to remove it and make it excellent in storage stability, curability and the like.

  Hereinafter, the present invention will be described in detail. FIG. 1 is a flowchart showing an example of a method for producing a semiconductor sealing material of the present invention. In the method for producing a semiconductor sealing material of the present invention, first, raw materials are blended and mixed so as to have a predetermined composition in the raw material preparation step 1 to prepare a raw material mixture of the semiconductor sealing material.

  The raw material mixture of the semiconductor encapsulating material having a predetermined composition is melt-kneaded with a biaxial kneader or the like in the kneading step 2 and then stretched into, for example, a sheet shape in the molding step 3. In the cooling step 4, the sheet-like kneaded product is solidified to a pulverizable state by, for example, cooling with contact with cooling water to obtain a sheet-like solidified product. Further, in the pulverization step 5, the sheet-like solidified product is pulverized by a pulverizer to obtain a semiconductor sealing material 6 which is a pulverized product.

  In the present invention, in the production of such a semiconductor sealing material, dry air 7 is brought into contact with the pulverized product during or after pulverization in the pulverization step 5. In the production of a semiconductor encapsulating material, the pulverized product that has been pulverized, particularly when the solidified product of the melt-kneaded product is pulverized or after pulverization, easily absorbs moisture. Decreases. Therefore, dry air 7 is brought into contact with the pulverized product during the pulverization step 5 or after the pulverization step 5.

  In the present invention, the dry air 7 may be brought into contact with the semiconductor sealing material which is a pulverized product at least one of during pulverization and after pulverization, but preferably the pulverized product during pulverization and until the pulverized product is accommodated in a predetermined container. Is brought into contact with dry air 7. By doing in this way, it becomes possible to suppress the moisture absorption of the semiconductor sealing material which is a pulverized material.

  In the present invention, dry air is brought into contact with the pulverized product during or after pulverization in the pulverization step 5, but particularly when the average particle size is reduced to 3 mm or less by pulverization, or after such an average particle size is obtained. It is more effective if it is brought into contact with dry air.

  2 and 3 show an example of an apparatus used in the pulverizing step 5. FIG. Here, the case where the pulverization step 5 is performed twice (coarse pulverization, fine pulverization) will be described. The apparatus shown in FIG. 2 is, for example, a cooler 10 for cooling and solidifying the sheet-like kneaded material obtained in the kneading step 2 and the molding step 3 and a pulverizer 11 connected thereto (hereinafter referred to as a coarse pulverizer 11). ).

  In the cooler 10, the sheet-like kneaded material obtained in the kneading step 2 and the molding step 3 is supplied to the kneaded material supply unit 12 and is conveyed to the crusher 11 by the belt conveyor 13. At this time, for example, cooling water is sprayed by a cooling means (not shown) to solidify the sheet-like kneaded product to obtain a sheet-like solidified product. This sheet-like solidified product is cut into a size that can be charged into the coarse crusher 11 by a cutting means (not shown) immediately before being charged into the coarse crusher 11.

  The cut sheet-like solidified product is put into the coarse crusher 11 and coarsely pulverized. At this time, dry air produced by a dry air production apparatus as will be described later is supplied to the crusher 11 through the dry air supply unit 14, and the solidified product is pulverized in a state where the dry air is supplied. The coarsely pulverized product (hereinafter referred to as “crushed material”) is discharged from a discharge port provided at the lower part of the coarse crusher 11 and accommodated in a coarsely crushed material container 15 installed at the lower part thereof. Is done.

  Further, the crushed material accommodated in the crushed material container 15 is finely pulverized into a pulverized material (hereinafter referred to as a pulverized material) using a pulverizer 20 (hereinafter referred to as a pulverizer 20). That is, the crushed material accommodated in the crushed material container 15 is introduced from the inlet 21 of the pulverizer 20 and is finely pulverized in the pulverization unit 22. At this time, the pulverizing unit 22 is supplied with the dry air produced by the dry air production apparatus that supplied the dry air to the crusher 11 through the dry air supply unit 23, and the crushed material is crushed in the dry air. Is called.

  The pulverized product thus obtained is discharged from the discharge port 24 provided at the lower part of the pulverizing unit 22 and is stored in the pulverized product storage container 25 installed at the lower part thereof. The obtained pulverized material can be used as a semiconductor sealing material for sealing a semiconductor element in the same manner as a general semiconductor sealing material.

  Although the production method of the present invention has been described above, in the present invention, the pulverizing step 5 does not necessarily have to be performed twice, and may be performed only once, or may be performed three or more times. Absent. When the pulverization step 5 is performed in a plurality of times, it is not always necessary to contact the dry air for all the steps, and the step of contacting the dry air can be selected as appropriate.

  In the example described above, dry air is supplied to the pulverizer and pulverization is performed in the dry air. However, for example, the pulverized material discharged from the pulverizer outlet is blown or discharged. It is good also as what passes the ground material discharged | emitted from the exit in dry air. Furthermore, dry air may be introduced and brought into contact with a pulverized material storage container in which the pulverized material discharged from the discharge port of the pulverizer is stored.

  As described above, the stage, position, etc. of bringing the dry air into contact are not particularly limited, but the stage of bringing the dry air into contact from the viewpoint of the curability of the finally obtained pulverized product (semiconductor encapsulating material). It is preferable to set the position, the supply amount of dry air, and the like.

  In the present invention, by bringing dry air into contact with the pulverized product during the pulverization step or after the pulverization step, the moisture absorption of the pulverized product that easily absorbs moisture is suppressed, whereby the storage stability of the semiconductor sealing material as the pulverized product is suppressed. It becomes possible to suppress a decrease in curability.

  Next, another method for manufacturing the semiconductor sealing material of the present invention will be described. The method for producing a semiconductor encapsulating material of the present invention comprises melting and kneading, cooling and pulverizing a raw material of a semiconductor encapsulating material having a predetermined composition, and bringing dry air into contact with the semiconductor encapsulating material that has absorbed moisture after pulverization. It is characterized by.

  Although the manufacturing method of the semiconductor sealing material described above suppresses moisture absorption by bringing dry air into contact with the pulverized product during or after the pulverization step, this manufacturing method is performed after manufacturing the semiconductor sealing material. By removing moisture by bringing dry air into contact with moisture absorbed after a predetermined period, its curability and the like are improved or recovered.

  FIG. 4 schematically shows a method for manufacturing this semiconductor sealing material. The drying container 30 accommodates a semiconductor sealing material that has absorbed moisture. The drying container 30 is provided with a dry air introduction portion 31 including a circular hole for introducing dry air. The dry air introduction unit 31 is supplied with dry air from a dry air supply device (described later) through the dry air supply unit to bring the dry air into contact with the semiconductor sealing material in the drying container 30. By doing so, it becomes possible to remove moisture from the semiconductor sealing material that has once absorbed moisture, and its curability and the like can be improved or recovered.

  4 is supplied with dry air from the dry air introduction section 31, and the dry air used for drying the semiconductor sealing material is discharged from the dry air introduction section 31. That is, in the drying container in FIG. 4, the dry air introduction unit 31 also serves as the dry air discharge unit.

  In addition to the simple structure shown in FIG. 4, for example, as shown in FIG. 5, the drying container 35 is provided with a dry air introduction part 36 and a dry air discharge part 37 separately. Also good. Such a structure is preferable because dry air can be efficiently introduced and discharged, and the semiconductor sealing material can be dried more efficiently.

  The present invention is effective regardless of the size of the semiconductor encapsulating material, which is a pulverized product, but is more effective when used to remove moisture from a semiconductor encapsulating material that has an average particle size of 3 mm or less and that is likely to absorb moisture. .

  The treatment time with dry air in such a drying container can be appropriately selected depending on the capacity of the drying container, the weight of the pulverized material accommodated therein, the supply amount of dry air, etc. It is preferable to carry out so as to improve the curability of the pulverized product (semiconductor sealing material) later.

  Next, the production of dry air used in the present invention will be described. FIG. 6 shows an example of the dry air supply device 40. As the raw material air in the dry air supply device 40, for example, general compressed air from a general compressed air supply device installed in a general factory or the like can be used.

  The dry air supply device 40 is connected to a general compressed air supply device via a valve 41. A regulator with filter 42 is connected to the valve 41 to adjust the pressure of the general compressed air from the general compressed air supply device and remove relatively large impurities in the general compressed air. General compressed air from general compressed air supply equipment installed in general factories contains oil from the compressor and iron powder from the piping, which adversely affects the characteristics of semiconductor sealing materials Go through the filter to get rid of this.

  Mist separators 43 and 44 and a drain catch 45 are connected to the regulator with filter 42. The mist separators 43 and 44 are connected to separate and remove, for example, 0.3 μm or more of fine particles such as oil and iron powder that have not been removed by the regulator with filter 42. The drain catch 45 is used to remove water droplets.

  Further, a regulator 46, a filter 47 and a heatless air dryer 48 are connected to the drain catch 45. The heatless air dryer 48 is used because it does not have a heater and is small and can obtain dry air with a low dew point relatively easily. A regulator 49, a micro mist separator 50, a super mist separator 51, and a filter 52 are sequentially connected to the heatless air dryer 48.

  The micro mist separator 50 separates and removes fine particles such as oil and iron powder of 0.1 μm or more, for example, and the super mist separator 51 separates oil and fine particles such as iron powder that could not be removed by the micro mist separator 50. Used to remove.

  In this way, by adjusting the pressure of general compressed air and separating and removing the particles in order from the largest particles using various mist separators, dry air with very few impurities can be easily obtained. It becomes possible.

  The device configuration of the dry air supply device 40 is not necessarily limited to this, and regulators, mist separators, heatless air dryers, and the like can be appropriately selected and used, and the connection order thereof can be changed as appropriate. Is possible.

  A branch portion 53 is provided at the end of the dry air supply device 40, and a part of the dry air obtained by processing the general compressed air is introduced into the measurement container 54. The measuring container 54 is provided with a management temperature and humidity meter 55 to measure whether the dry air has a predetermined temperature and humidity.

  Such dry air is preferably 15 ° C. or higher and 23 ° C. or lower. Further, it is more preferable that the dry air has a relative humidity at 20 ° C. of 20% RH or less. If the temperature of the dry air is too high, it may be cured when it is brought into contact with the semiconductor encapsulating material that is a pulverized product. If the temperature is too low, it will absorb moisture when brought into contact with the semiconductor encapsulating material that is a crushed product. There is a risk that. Further, if the relative humidity at 20 ° C. exceeds 20% RH, the effect of removing moisture from the crushed semiconductor sealing material is reduced, which is not preferable.

  In this way, the dry air supply unit 40 removes impurities such as oil and iron powder and moisture from the general compressed air, and the dry air whose temperature and humidity are adjusted to a predetermined range is the dry air supply unit as described above. 14, 23, and 36 are supplied to a pulverizer (crusher 11 and pulverizer 20), drying containers 30 and 35, and the like.

  The semiconductor sealing material manufactured by such a method for manufacturing a semiconductor sealing material of the present invention is not particularly limited, and can be used for manufacturing a general semiconductor sealing material. As a semiconductor sealing material, what consists of an epoxy resin, a hardening | curing agent, a hardening accelerator, an inorganic filler etc. is mentioned, for example.

  As an epoxy resin, what is generally used for a semiconductor sealing material can be used. Examples of such epoxy resins include novolak type epoxy resins represented by o-cresol novolac epoxy resins, dicyclopentadiene type epoxy resins, bifunctional biphenyl type epoxy resins, bisphenol type epoxy resins, and naphthalene type epoxy resins. Can be mentioned. These may be used alone or in combination of two or more.

  As a hardening | curing agent, what is generally used for a semiconductor sealing material can be used, For example, a phenol resin and an acid anhydride are mentioned. Examples of the phenolic resin include phenol novolac resin, phenol aralkyl resin, cyclopentadiene, phenol polymer, naphthalene type phenol resin, bisphenol A, bisphenol F, and the like. These may be used alone or in combination of two or more.

  The acid anhydride is not particularly limited as long as it has an acid anhydride group in the molecule. For example, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydro And phthalic anhydride. These may be used alone or in combination of two or more.

  The curing accelerator is not particularly limited as long as it is known to be used as a curing accelerator when generally curing an epoxy resin using a phenol resin as described above. For example, Trimethylphosphine, triethylphosphine, tributylphosphine, triphenylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, methyldiphenylphosphine, dibutylphenylphosphine, tricyclohexylphosphine, bis (diphenylphosphino) methane, 1 , 2-bis (diphenylphosphino) ethane, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, triphenylphosphine triphenylborane, etc. 1,8-diazabicyclo [5,4,0] undecene-7 (DBU), 2,6-dichlorobenzonitrile (DBN), triethylamine, triethylenediamine, benzyldimethylamine, α-methylbenzyldimethylamine, triethanolamine , Tertiary amine compounds such as dimethylaminoethanol, tris (dimethylaminomethyl) phenol, 2-heptadecylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 4 -Methylimidazole, 4-ethylimidazole, 2-phenyl-4-hydroxymethylimidazole, 2-enyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, 2-phenyl-4-methyl-5-hydro Examples thereof include imidazole compounds such as xylmethylimidazole and 2-phenyl-4,5-dihydroxymethylimidazole.

  Examples of the inorganic filler include silica powder, alumina powder, aluminum nitride powder, silicon nitride powder, glass powder, antimony trioxide and the like, and these can be used alone or in combination of two or more. Among these, silica powder is particularly preferably used because of its low coefficient of linear expansion.

  The production method of the present invention is effective regardless of the combination of resin, curing agent, curing accelerator, etc., but in particular, the combination of epoxy resin and acid anhydride as described above does not depend on the type of curing accelerator. Moreover, in the combination of an epoxy resin and a phenol resin, a high effect is exhibited when a reinforced basic amine compound such as an organic phosphine compound, DBU or DBN is used as a curing accelerator.

  Next, the present invention will be described with reference to examples. In addition, this invention is not limited by these Examples.

(Example 1)
Using the raw materials shown in Table 1 below, the raw materials mixture of the semiconductor sealing material was obtained by blending and mixing with the composition shown in Table 1. The production amount of the raw material mixture was 50 kg. This raw material mixture was melt-kneaded at 80 ° C. to 110 ° C. and then cooled and solidified to obtain a solidified product.

  This solidified product was pulverized with a pulverizer while aeration of dry air at a temperature of 20 ° C. and a relative humidity of 18% RH at an air flow rate of 10 L / min for 20 minutes to obtain a semiconductor sealing material as a pulverized product.

(Example 2)
The solidified product obtained in the same manner as in Example 1 was pulverized with a pulverizer while aeration of dry air at a temperature of 15 ° C. and a relative humidity of 18% RH at an air flow rate of 2 L / min for 60 minutes.

(Example 3)
The solidified product obtained in the same manner as in Example 1 was pulverized in an environment of a temperature of 20 ° C. and a relative humidity of 60% RH to obtain a pulverized product, and the pulverized product was placed in a drying container having a capacity of 150 L. A semiconductor encapsulating material was obtained by aeration of dry air having a temperature of 20 ° C. and a relative humidity of 18% RH at a flow rate of 10 L / min for 30 minutes.

(Comparative Example 1)
The solidified product obtained in the same manner as in Example 1 was pulverized in an environment of a temperature of 20 ° C. and a relative humidity of 60% RH to obtain a semiconductor sealing material as a pulverized product.

(Comparative Example 2)
The solidified product obtained in the same manner as in Example 1 was pulverized in an environment of a temperature of 15 ° C. and a relative humidity of 40% RH to obtain a semiconductor sealing material as a pulverized product.

  In addition, the dry air used for manufacture of the semiconductor sealing material of Examples 1-3 was manufactured using the dry air supply apparatus of the apparatus structure substantially the same as the dry air supply apparatus shown in FIG. Table 2 shows the main devices and equipment used in this dry air supply device.

  Next, SF (spiral flow) value, gel time, and flow viscosity were measured for the semiconductor sealing materials of Examples 1 to 3 and Comparative Examples 1 and 2. Moreover, it shape | molded using the semiconductor sealing material of Examples 1-3 and Comparative Examples 1 and 2, and measured the hardness at the time of heating, bending strength, a bending elastic modulus, and the number of continuous shots. The results are shown in Table 3.

  As is clear from Table 3, it was confirmed that the semiconductor sealing materials of Examples 1 to 3 had the same moldability as the conventional one. Moreover, it was recognized that the molded product manufactured using it has improved mechanical strength compared with the conventional one.

Example 4
The raw materials shown in Table 1 above were used and blended and mixed in the composition as shown in Table 1 to obtain a raw material mixture of the semiconductor sealing material. The production amount of the raw material mixture was 50 kg. This raw material mixture was melt-kneaded at 80 ° C. to 110 ° C. and then cooled and solidified to obtain a solidified product.

  The solidified product is pulverized by a pulverizer to form a pulverized product, and the pulverized product is placed in a drying container having a capacity of 150 L. Dry air having a temperature of 15 ° C. and a relative humidity of 21% RH is supplied at an air flow rate of 10 L / min. For 60 minutes to obtain a semiconductor sealing material.

(Comparative Example 3)
In the same manner as in Example 4, preparation of a solidified product, pulverization, and treatment with dry air were performed. After that, the pulverized material treated with dry air is assumed to be manufactured and stored under high temperature and high humidity in summer, and left in an environment of 30 ° C. and relative humidity 60% RH for 4 hours, and the semiconductor encapsulated A stop material was obtained.

  In addition, the dry air used for manufacture of the semiconductor sealing material of Example 4 and the comparative example 3 was manufactured using the dry air supply apparatus of the apparatus structure substantially the same as the dry air supply apparatus shown in FIG. The main devices and equipment used in this dry air supply device are as shown in Table 2 above.

  Next, after measuring the moisture content of the semiconductor encapsulating materials of Example 4 and Comparative Example 3, molding was performed using these semiconductor encapsulating materials, hot hardness, bending strength, flexural modulus, number of continuous shots. Was measured. The results are shown in Table 4.

  As is clear from Table 4, the semiconductor encapsulating material of Example 4 has a lower moisture content than the semiconductor encapsulating material produced by the conventional manufacturing method, and the cured product is recognized to have excellent mechanical strength and the like. It was.

The flowchart which showed an example of the manufacturing process of the semiconductor sealing material of this invention The figure which showed an example of the grinder (crusher) used for this invention The figure which showed an example of the grinder (pulverizer) used for this invention The figure which showed an example of the drying container used for this invention The figure which showed the other example of the drying container used for this invention The figure which showed an example of the dry air supply apparatus used for this invention

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Raw material preparation process, 2 ... Kneading process, 3 ... Molding process, 4 ... Cooling process, 5 ... Crushing process, 6 ... Semiconductor sealing material, 7 ... Dry air, 10 ... Cooling machine, 11 ... Crusher (crusher) ), 14 ... dry air supply unit, 15 ... pulverized material storage container (crushed material storage container), 20 ... pulverizer (pulverizer), 22 ... pulverization unit, 23 ... dry air supply unit, 24 ... discharge port, 25 ... Pulverized material storage container (fine pulverized material storage container), 30, 35 ... drying container, 31, 36 ... dry air introduction unit, 37 ... dry air discharge unit, 40 ... dry air supply device

Claims (6)

A kneading step for obtaining a kneaded product by melting and kneading a raw material mixture of a semiconductor sealing material, a cooling step for cooling the kneaded product to obtain a pulverized solidified product, and a pulverizing method for pulverizing the solidified product to obtain a pulverized product. A process for producing a semiconductor sealing material comprising steps,
A method for producing a semiconductor sealing material, wherein dry air is brought into contact with the pulverized product during or after the pulverizing step.   A method for producing a semiconductor encapsulating material, comprising: melting and kneading, cooling and pulverizing a raw material mixture of a semiconductor encapsulating material, and bringing dry air into contact with the semiconductor encapsulating material which has absorbed moisture after the pulverization.   The method for producing a semiconductor sealing material according to claim 1, wherein the dry air has a relative humidity at 20 ° C. of 20% RH or less.   A semiconductor sealing material comprising: a pulverizer that pulverizes a solidified product obtained by melt kneading and cooling a raw material mixture of a semiconductor sealing material; and a dry air supply unit that supplies dry air to the pulverizer. manufacturing device.   A semiconductor container containing a semiconductor sealing material obtained by melting, kneading, cooling and pulverizing a raw material mixture of the semiconductor sealing material, and a drying container having a dry air introduction part for introducing dry air, and drying in the dry air introduction part An apparatus for producing a semiconductor encapsulating material, comprising: a dry air supply unit for supplying air.   A semiconductor encapsulating material obtained by melt-kneading, cooling and pulverizing a raw material mixture of a semiconductor encapsulating material, wherein the semiconductor encapsulating material is produced by the method for producing a semiconductor encapsulating material according to claim 1. A semiconductor sealing material characterized.

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