JP2005202123A - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device, for example, a liquid crystal display device, in which display quality does not vary and the uniformity and resolution of a screen can be satisfied.
A non-linear resistance element 33 having a laminated structure of a substrate 6a, a first metal 36-an insulating film 37-a second metal 38, a dot electrode 24a connected to the second metal 38 of the non-linear resistance element 33, and a substrate This is a liquid crystal display device having wiring 31 provided on 6a. The second metal 38 and the dot electrode 24a are formed of ITO obtained by polycrystallizing amorphous ITO by annealing treatment, whereby the second metal 38 and the electrode 24a with high dimensional accuracy are obtained, and variations in display quality are prevented. The second layer 31b of the wiring 31 is made of a silver-based metal, a copper-based metal, or an Al—Ni—C alloy, and even if ITO has a high resistance, the resistance value of the entire liquid crystal display device is kept low, and the uniformity of the screen is improved. Satisfactory resolution.
[Selection] Figure 1

Description

  The present invention relates to an electro-optical device such as a liquid crystal display device, an organic EL device, and a plasma display device. The present invention also relates to a manufacturing method for manufacturing the electro-optical device. The present invention also relates to an electronic apparatus configured using the electro-optical device.

  In recent years, electro-optical devices such as liquid crystal display devices have been widely used in electronic devices such as mobile phones, personal digital assistants, and PDAs (Personal Digital Assistants). For example, an electro-optical device is used to perform various displays related to electronic equipment.

  A liquid crystal display device which is one of electro-optical devices generally has a structure in which liquid crystal is sandwiched between a pair of substrates each having an electrode. When these electrodes are viewed in a planar manner, the regions where the electrodes overlap are arranged in a matrix in the row and column directions, and each of these regions constitutes a pixel. The display is performed by controlling the voltage applied to the liquid crystal existing in each pixel for each pixel to control the alignment of the liquid crystal.

  Such a liquid crystal display device is opposed to an active matrix liquid crystal display device having a structure in which the alignment of the liquid crystal is controlled by controlling the voltage applied to the pixel using the switching element, without using the switching element. There is a passive matrix type liquid crystal display device having a structure in which the orientation of liquid crystal is controlled by controlling the voltage applied to the striped electrode, that is, a simple matrix type liquid crystal display device.

  The active matrix liquid crystal display device uses a three-terminal switching element such as a TFT (Thin Film Transistor) and a two-terminal nonlinear resistance element such as a TFD (Thin Film Diode). There is a thing. The two-terminal type non-linear resistance element has an advantage that the configuration is simpler and the manufacturing process is less than that of the three-terminal type switching element.

  A TFD element, which is a two-terminal nonlinear resistance element, generally has a metal (metal) -insulator-metal (metal) laminated structure, a so-called MIM structure, and has non-linear voltage-current characteristics. Is. In this TFD element, conventionally, the first metal is formed of TaW (tantalum tungsten), the insulating film is formed of an anodic oxide film, and the second metal is formed of ITO (Indium Tin Oxide) together with the dot electrode. Those are known (for example, see Patent Document 1).

JP 2002-164202 A (page 11, FIG. 23)

  In the case where the dot electrode and the second metal are formed of ITO as described above, conventionally, ITO is formed into a uniform thickness by a sputtering process, and then a photo-etching process is performed to form a predetermined pattern of dots. An electrode and a second metal were obtained. Here, the photoetching process is a process comprising a photolithography process and a subsequent etching process. However, when the dot electrode and the second metal are formed by photoetching processing using normal ITO, the dimensional accuracy of the patterning is poor, and therefore, there is a variation in the element characteristics of the TFD element and the display characteristics due to the dot electrode. There was a risk of getting out.

  In addition, a plurality of wirings are usually formed on the substrate constituting the liquid crystal display device. These wirings are used for supplying scanning signals and data signals to a plurality of electrodes, for example. When the dot electrode and the second metal are formed of ITO as described above and a plurality of wirings formed on the substrate are formed of the same ITO, since the ITO is relatively high resistance, There was a problem of insufficient resolution.

  The present invention has been made in view of the above-described problems, and there is no variation in display quality, and the electro-optical device, method for manufacturing the electro-optical device, and electronic The purpose is to provide equipment.

  In order to achieve the above object, an electro-optical device according to the present invention includes a substrate and a nonlinear resistance element provided on the substrate and having a laminated structure of a first metal, an insulating film, and a second metal from the substrate side. And an electrode provided on the substrate so as to be connected to the second metal of the nonlinear resistance element, and a wiring provided on the substrate, wherein the second metal and the electrode are made of amorphous ITO. The wiring is made of silver-based metal or copper-based metal.

  According to this electro-optical device, by performing a photo-etching process on the amorphous ITO, both the second metal of the nonlinear resistance element and the electrode connected thereto are patterned into a predetermined shape with the ITO. Since amorphous ITO can be easily etched with a weak acid, the formed second metal and electrode have very high dimensional accuracy. Therefore, it is possible to prevent variations in the quality of display performed using the nonlinear resistance element and the electrode.

  Further, according to the electro-optical device having the above configuration, since the wiring is formed of a material having a very low resistance value such as a silver-based metal or a copper-based metal, the second metal and the electrode are formed using ITO having a high resistance value. Even in the case of forming the electro-optical device, the resistance value of the electro-optical device as a whole can be kept low, so that the uniformity and resolution of the screen of the electro-optical device can be satisfied.

  Next, in the electro-optical device according to the present invention, it is desirable that the silver-based metal is an APC alloy. The APC alloy is an alloy containing Ag (silver), Pd (palladium), and Cu (copper). The APC alloy is a metal having a much lower resistance than Cr, which is a commonly used wiring material. Therefore, even when both the second metal and the electrode of the TFD element are formed of ITO, The overall resistance value can be kept low.

  Next, in the electro-optical device according to the present invention, it is preferable that the copper-based metal is an HPC (High Performance Cu) alloy. The HPC alloy is an alloy formed by adding Mo to Cu. According to the experiments by the present inventors, it is desirable that the amount of Mo added is 1.2% by weight with respect to Cu. The HPC alloy is a metal having a much lower resistance than Cr, which is a commonly used wiring material. Therefore, even when both the second metal of the TFD element and the electrode are formed of ITO, the HPC alloy The overall resistance value can be kept low.

  Next, another electro-optical device according to the present invention includes a substrate, a non-linear resistance element provided on the substrate and having a first metal-insulating film-second metal laminated structure from the substrate side, An electrode provided on the substrate so as to be connected to the second metal of the non-linear resistance element, and a wiring provided on the substrate, wherein the second metal and the electrode are formed by annealing amorphous ITO. The wiring is formed of poly-ITO, and the wiring is formed of an Al (aluminum) -Ni (nickel) -C (carbon) alloy.

  According to this electro-optical device, by performing a photo-etching process on the amorphous ITO, both the second metal of the nonlinear resistance element and the electrode connected thereto are patterned into a predetermined shape with the ITO. Since amorphous ITO can be easily etched with a weak acid, the formed second metal and electrode have very high dimensional accuracy. Therefore, it is possible to prevent variations in the quality of display performed using the nonlinear resistance element and the electrode.

  In addition, according to the electro-optical device having the above configuration, the wiring is formed of a material having a very low resistance value such as an Al—Ni—C alloy, so that the second metal and the electrode are formed by using ITO having a high resistance value. Even when the electro-optical device is formed, the resistance value of the electro-optical device as a whole can be kept low, so that the uniformity and resolution of the screen of the electro-optical device can be satisfied.

  Next, a method for manufacturing an electro-optical device according to the present invention includes a step of forming a first metal of a nonlinear resistance element on a substrate, a step of forming an insulating film of the nonlinear resistance element on the first metal, Forming a second metal of a non-linear resistance element on the insulating film, wherein the step of forming the second metal includes the step of forming amorphous ITO planarly and the amorphous ITO by photoetching. It has the process of patterning in the shape of a 2nd metal, and the process of annealing this amorphous ITO and making it change to poly ITO, It is characterized by the above-mentioned.

  According to this method of manufacturing an electro-optical device, the second metal and the electrode of the non-linear resistance element are not formed by photoetching the normal ITO to form the second metal and the electrode. I tried to do it. Since amorphous ITO can be easily etched with a weak acid, the formed second metal and electrode have very high dimensional accuracy. Therefore, it is possible to prevent variations in the quality of display performed using the non-linear resistance element and the electrode.

  Further, the amorphous ITO patterned in the form of the second metal and the electrode ensures stability and transparency by being subjected to an annealing process thereafter. Thereby, a clear and stable liquid crystal display can be realized.

  The method for manufacturing the electro-optical device having the above configuration further includes a step of forming a wiring on the base material, and the wiring is preferably formed of a silver-based metal or a copper-based metal. As a result, even when the TFD element or the like is formed using ITO having a relatively high resistance value, the overall resistance value of the electro-optical device can be kept low.

  In the method of manufacturing the electro-optical device having the above structure, the silver metal is preferably an APC (Ag—Pd—Cu) alloy. The copper metal is preferably an HPC (High Performance Cu = Cu—Mo) alloy, preferably Cu—Mo (1.2 wt%).

  In the method for manufacturing an electro-optical device according to the present invention including a step of forming a wiring on the base material, the wiring is preferably formed of an Al—Ni—C alloy. Since the Al-Ni-C alloy has a very low resistance value, if a wiring is formed using the Al-Ni-C alloy, the electro-optical device is used even when the second metal and the electrode are formed using ITO having a high resistance value. The overall resistance value of the electro-optical device can be kept low, and therefore the uniformity and resolution of the screen of the electro-optical device can be satisfied.

  Next, an electronic apparatus according to the present invention includes the electro-optical device having the above-described configuration. In the electro-optical device according to the present invention, display with no variation can be performed by making the dimensional accuracy of the TFD element and the electrode accurate. Therefore, even with an electronic apparatus using the electro-optical device, display without variation can be performed. Further, in the electro-optical device according to the present invention, the TFD element and the electrode are formed using ITO by forming the wiring with an alloy having a very low resistance value such as an APC alloy, an HPC alloy, or an Al—Ni—C alloy. Even in this case, the overall resistance value of the electro-optical device could be kept low. Therefore, according to the electronic apparatus using the electro-optical device, the uniformity and resolution of the screen can be satisfied.

  Examples of such electronic devices include mobile phones, personal digital assistants, PDAs, personal computers, digital cameras, watches, liquid crystal televisions, viewfinder type or monitor direct view type video tape recorders, car navigation devices, pagers. Electronic notebook, calculator, word processor, workstation, video phone, POS terminal, etc.

(First embodiment of electro-optical device)
Hereinafter, a case where the present invention is applied to a liquid crystal display device which is an example of an electro-optical device and is a transflective type and capable of color display by a TFD (Thin Film Diode) driving method will be described as an example. An embodiment of the present invention will be described. Of course, the present invention is not limited to the embodiment.

  FIG. 3 shows a liquid crystal display device which is an embodiment of the electro-optical device according to the invention. 4 is a cross-sectional view taken along line AA in FIG. In FIG. 3, the liquid crystal display device 1 is formed by mounting driving ICs 3 a, 3 b, 3 c on a liquid crystal panel 2 and further assembling an illumination device 4 to the liquid crystal panel 2. The observer visually recognizes the display from the direction of arrow C. The liquid crystal panel 2 is mounted with other component elements, for example, FPC (Flexible Printed Circuit) as required.

  As shown in FIG. 4, the liquid crystal panel 2 is formed by bonding an element substrate 6 a and a color filter substrate 6 b with a sealing material 10. As shown in FIG. 3, the sealing material 10 is formed in a square or rectangular shape, that is, a rectangular ring shape, and an opening 10a for liquid crystal injection is formed in a part thereof. In FIG. 4, a gap, a so-called cell gap, is formed between the element substrate 6a and the color filter substrate 6b, and a liquid crystal layer 7 is formed by enclosing a liquid crystal as an electro-optical material, for example, nematic liquid crystal, in the cell gap. Has been.

  The element substrate 6a has a rectangular base material 8a formed from translucent glass, translucent plastic, or the like, as viewed from the direction of arrow C, and a polarizing plate 9a is attached to the outer surface of the base material 8a. Fitted by. The color filter substrate 6b has a rectangular base material 8b formed of translucent glass, translucent plastic, or the like, and a polarizing plate 9b is attached to the outer surface of the base material 8b by sticking or the like. Yes.

  FIG. 5 is an enlarged view of a portion indicated by an arrow B in FIG. In FIG. 5, a large number of spherical spacers 32 are dispersed on the surface of either the element substrate 6a or the color filter substrate 6b, and the cells between the substrates 6a and 6b are bonded to each other. It functions to keep the gap G constant. Then, the liquid crystal layer 7 is formed in the cell gap G.

  In FIG. 5, a linear line wiring 31, a TFD element 33 as an active element, a switching element, or a nonlinear resistance element, and a transparent dot electrode 24a are formed on the liquid crystal side surface of the base material 8a constituting the element substrate 6a. The Further, an alignment film 26a is formed on these elements, and the alignment film 26a is subjected to an alignment process, for example, a rubbing process, whereby the alignment of liquid crystal molecules in the vicinity of the alignment film 26a is determined.

  FIG. 6 shows the positional relationship among the dot electrode 24a, the TFD element 33, and the line wiring 31 when viewed from the direction of arrow C in FIG. As shown in the drawing, a plurality of line wirings 31 are arranged in parallel at intervals, and are formed in a so-called stripe shape. A plurality of dot electrodes 24 a are formed between the line wires 31, and the dot electrodes 24 a are connected to the line wires 31 by the TFD element 33. The plurality of dot electrodes 24a are formed in a matrix.

  The dot electrode 24a is formed by, for example, a photoetching process using ITO (Indium Tin Oxide) as a material. That is, an ITO film having a uniform thickness is formed by photolithography, and further, a dot electrode 24a having a predetermined shape is formed by etching. Further, the alignment film 26a in FIG. 5 is formed by, for example, applying and baking a polyimide solution, or by offset printing. The alignment film 26a is subjected to an alignment process such as a rubbing process, and the alignment process determines the alignment of liquid crystal molecules in the vicinity of the alignment film 26a.

  FIG. 1 is an enlarged view of a portion indicated by an arrow E in FIG. As shown in FIG. 1, each TFD element 33 is formed by connecting a first TFD element 33a and a second TFD element 33b in series. The TFD element 33 is formed as follows, for example. That is, first, the first metal 36 of the TFD element 33 is formed of TaW (tantalum / tungsten). Next, the insulating film 37 of the TFD element 33 is formed by anodic oxidation.

  Next, the second metal 38 of the TFD element 33, the first layer 31a of the line wiring 31, and the dot electrode 24a are formed by a photoetching process using a (amorphous) -ITO as a material. Specifically, first, a-ITO is formed to a uniform thickness by a film forming method such as sputtering, and then the second metal 38 and the like are patterned into a desired shape by etching. In general, normal ITO that has no amorphous structure is difficult to etch, and it is difficult to accurately obtain the dimensions of each element. In contrast, a-ITO is easy to etch, and the dimensions of each element can be accurately obtained. Therefore, the plurality of second metals 38 and the plurality of dot electrodes 24a according to the present embodiment are formed without variation in desired dimensions even though they are formed of ITO. For this reason, display without variation among a plurality of pixels can be performed.

  By the way, conventionally, the second metal 38 is often formed of Cr. However, Cr has a characteristic that element characteristics such as a holding voltage and a writing voltage change according to a temperature change. In contrast, in the present embodiment, an a-ITO film is formed at the time of film formation, and after this film is patterned into a predetermined shape for the second metal 38 and the like, it is converted to normal ITO by annealing. I made it. For this reason, the element characteristic of the TFD element having the second metal 38 finally formed of ITO does not change even with a temperature change of 25 to 80 ° C., for example. That is, the liquid crystal display device using the TFD element 33 of the present embodiment can perform stable display against temperature changes.

  After the second metal 38, the dot electrode 24a, and the first layer 31a are formed by a-ITO, the second layer 31b of the line wiring 31 is then formed by silver-based metal or copper-based metal, and then the element substrate The whole 6a is annealed by a heating means such as a hot plate. By this annealing, a-ITO is changed to poly-ITO, and its internal structure is stabilized. At the same time, ITO becomes transparent.

  The silver-based metal can be formed of, for example, an APC (that is, Ag—Pd—Cu) alloy. Moreover, the said copper-type metal can be formed with a HPC (High Performance Cu = Cu-Mo) alloy, for example. In the Cu-Mo alloy, the Mo concentration is desirably set to about 1.2% by weight with respect to the Cu concentration. According to experiments by the present inventors, it has been found that etching is easily performed when the Mo concentration is set.

  The first layer 31a of the line wiring 31 is made of ITO. Since this ITO has a high resistance value, if the line wiring 31 is composed of only ITO, the wiring resistance value becomes too high and a large burden is imposed on the electric drive system. On the other hand, if the second layer 31b of the line wiring 31 is formed of an APC alloy or an HPC alloy, the resistance value of these alloys is low, so that the wiring resistance value can be kept low.

  The second layer 31b of the line wiring 31 can also be formed of an Al (aluminum) -Ni (nickel) -C (carbon) alloy. Generally, an Al-based alloy easily causes a battery reaction with respect to ITO, and if the battery reaction occurs, the ITO may melt. In order to avoid this phenomenon, the present inventors conducted various experiments. As a result, it was found that when Ni and C are added to Al, the battery reaction does not occur. Moreover, since Al (aluminum) -Ni (nickel) -C has a very low resistance value, it is very convenient for keeping the wiring resistance value of the entire liquid crystal display device low.

  In FIG. 1, the second metal 38 of the first TFD element 33 a extends from the first layer 31 a of the line wiring 31. The second metal 38 of the second TFD element 33b is connected to the dot electrode 24a. Considering that an electric signal flows from the line wiring 31 toward the dot electrode 24a, the electric signal flows in the order of the second electrode 38 → the insulating film 37 → the first metal 36 in the first TFD element 33a according to the current direction. In the second TFD element 33b, electrical signals flow in the order of the first metal 36 → the insulating film 37 → the second metal 38.

  That is, a pair of electrically opposite TFD elements are connected in series between the first TFD element 33a and the second TFD element 33b. Such a structure is generally called a back-to-back structure, and the TFD element of this structure is compared with a case where the TFD element is configured by only one TFD element. It is known that stable characteristics can be obtained. If stabilization of the TFD element is not so necessary, the TFD element may be configured with only one TFD element.

  In FIG. 5, the resin layer 16 is formed on the liquid crystal side surface of the base material 8b constituting the color filter substrate 6b, and the reflective film 17 is formed thereon. Further, a light shielding film 19 is formed on the reflection film 17, and R (red), G (green), and B (blue) coloring elements 21 are predetermined between the light shielding films 19 when viewed from the direction of the arrow C. Are formed in a planar arrangement. The plurality of coloring elements 21 constitute a color filter 22. Further, an overcoat layer 23 is formed on the light shielding film 19 and the coloring element 21, a linear electrode 24b having translucency is formed thereon, and an alignment film 26b is formed thereon.

  The overcoat layer 23 is formed, for example, by applying and baking an epoxy-based or acrylic resin material, or by performing a photolithography process on the epoxy-based or acrylic resin material as necessary. Is done. The alignment film 26b is formed by, for example, applying and baking a polyimide solution, or by offset printing. The alignment film 26b is subjected to an alignment process, for example, a rubbing process, whereby the alignment of liquid crystal molecules in the vicinity of the alignment film 26b is determined. The rubbing direction of the alignment film 26b and the rubbing direction of the alignment film 26a on the element substrate 6a side intersect at an appropriate angle according to the characteristics of the liquid crystal.

  In FIG. 5, the resin layer 16 has a first layer 16a and a second layer 16b laminated thereon. These layers can be formed of the same material. On the surface of the first layer 16a, a plurality of recesses 27 are irregularly arranged, that is, randomly arranged in a plan view when viewed from the direction of arrow C. Therefore, irregularities are formed on the surface of the second layer 16b laminated on the first layer 16a so as to correspond to the concave portions 27 and the convex portions adjacent thereto. The irregularities formed on the surface of the first layer 16a are rough, and smooth irregularities can be obtained by laminating the second layer 16b on this. By providing irregularities on the surface of the second layer 16 b, that is, the surface of the resin layer 16, irregularities are also formed on the surface of the reflective film 17 laminated on the resin layer 16. Due to the presence of the irregularities, the light incident on the reflective film 17 is reflected as scattered light.

  The linear electrode 24b is formed by, for example, photolithography processing and etching processing using ITO as a material. These linear electrodes 24b extend in the direction perpendicular to the paper surface of FIG. As shown in FIG. 6, these linear electrodes 24b extend in a direction perpendicular to the line wiring 31 on the element substrate 6a, and are parallel to each other in a direction perpendicular to the line wirings 31, that is, as a whole. As shown in FIG. Each linear electrode 24b is formed so as to face a plurality of dot electrodes 24a arranged in a row in a direction perpendicular to the line wiring 31. A region where the dot electrode 24a and the linear electrode 24b overlap constitutes a display dot region D which is a minimum region for display.

  In FIG. 5, the reflective film 17 is formed by, for example, a photolithography process and an etching process using a light-reflective metal material such as Al (aluminum) as a material. At this time, the reflection film 17 is provided with a through hole for passing light, that is, an opening 34 corresponding to each display dot region D. These openings 34 are configured to have a function of transmitting light to the reflective film 17. Instead of providing the openings 34, the thickness of the reflective film 17 is reduced to reflect the light. It is also possible to have both of the functions of transmitting light. Of the display dot region D, the region where the reflective film 17 exists constitutes the reflection portion R, and the region corresponding to the opening 34 constitutes the transmission portion T.

  The coloring element 21 is composed of three colors of R, G, and B, which are the three primary colors for color display. The coloring elements 21 of these colors are arranged in a predetermined plane arrangement when viewed from the direction of the arrow C, for example, the stripe arrangement shown in FIG. 7A, the mosaic arrangement shown in FIG. 7B, or the FIG. The delta arrangement shown in FIG.

  The stripe arrangement in FIG. 7A is an arrangement in which coloring elements 21 of the same color are arranged in the vertical direction of the drawing. Further, the mosaic arrangement in FIG. 7B is an arrangement in which the color of the coloring elements 21 changes cyclically in order in both the vertical and horizontal directions in the figure. The delta arrangement in FIG. 7C is an arrangement in which the coloring elements 21 are arranged so as to be located at the vertices of the triangles, and the color in the horizontal direction sequentially changes cyclically. Note that various arrangements other than the above three types have been proposed for the arrangement of the color coloring elements 21, so that an appropriate arrangement is selected as necessary.

  Each coloring element 21 is provided corresponding to the display dot region D. In the case of monochrome display that does not use the coloring element 21, one pixel is formed by one display dot region D, but in the case of a structure that performs color display using the three-color coloring element 21 as in the present embodiment. In this case, one pixel is formed by a collection of three colored elements 21 of R, G, and B.

  In FIG. 3, one side of the element substrate 6 a projects to the outside of the color filter substrate 6 b to constitute a projecting portion 41. The driving ICs 3a, 3b, 3c are mounted on the surface of the overhang portion 41. This mounting can be performed using, for example, a COG (Chip On Glass) technique using an ACF (Anisotropic Conductive Film). The output terminal of the central driving IC 3b is directly connected to the line wiring 31 on the element substrate 6a. On the other hand, the driving ICs 3a and 3c on both sides are connected to the linear electrodes 24b on the color filter substrate 6b through conductive particles dispersed in the sealing material 10.

  In order to electrically connect the output terminals of the driving ICs 3a, 3b, and 3c, that is, the output bumps, the line wiring 31 and the linear electrode 24b, a large number of wirings are formed on the surface of the element substrate 6a and the color filter substrate 6b. In addition, for other reasons, wiring may be formed as necessary. These wirings are desirably formed simultaneously with the formation of the TFD element 33 and the line wiring 31 of FIG. In particular, when the second layer 31b of the line wiring 31 is formed of an APC alloy, an HPC alloy, or an Al—Ni—C alloy, it is desirable to simultaneously form various wirings using the same alloy.

  Note that any connection method other than the COG technique can be used for connection between the substrate and the driving IC. As such a connection method, for example, a TCP (Tape Carrier Package) in which an IC chip is bonded on an FPC (Flexible Printed Circuit) using TAB (Tape Automated Bonding) technology is electrically connected to a liquid crystal display device. It is good also as a structure to connect. Further, COB (Chip On Board) technology for bonding an IC chip to a hard substrate may be used.

  Next, in FIG. 3, the illuminating device 4 disposed opposite to the outer surface of the color filter substrate 6b constituting the liquid crystal panel 2 is, for example, a rectangular and plate-shaped light guide made of transparent plastic. It has the body 42 and LED43 as a point light source. As shown in FIG. 4, a light reflecting sheet 44 can be mounted on the surface of the light guide 42 opposite to the liquid crystal panel 2. Further, a light diffusion sheet 46 can be mounted on the surface of the light guide 42 facing the liquid crystal panel 2. Further, a prism sheet (not shown) can be mounted on the light diffusion sheet 46. Although three LEDs 43 are used in the present embodiment, the number of LEDs 43 may be one if necessary, or may be a plurality other than three. Further, a linear light source such as a cold cathode tube can be used instead of a point light source such as an LED. The illuminating device 4 configured as described above functions as a backlight that illuminates the liquid crystal panel 2 from the back.

  FIG. 8 shows an electrical equivalent circuit of the liquid crystal display device 1 of FIG. In FIG. 8, a plurality of scanning lines 47 are formed to extend in the row direction X, and a plurality of data lines 48 are formed to extend in the column direction Y. The scanning line 47 is realized by the linear electrode 24b of FIG. 3, and the data line 48 is realized by the line wiring 31 of FIG. The display dot region D is formed at each intersection of the scanning line 47 and the data line 48. In each display dot region D, the liquid crystal layer 7 and the TFD element 33 are connected in series. In the present embodiment, the liquid crystal layer 7 is connected to the scanning line 47 side, and the TFD element 33 is connected to the data line 48 side. Each scanning line 47 is driven by a scanning line driving circuit 51. On the other hand, each data line 48 is driven by a data line driving circuit 52. The scanning line driving circuit 51 is configured by the driving ICs 3a and 3c in FIG. 3, and the data line driving circuit 52 is configured by the driving IC 3b in FIG.

  According to the liquid crystal display device 1 configured as described above, in FIG. 3, when the liquid crystal display device 1 is placed in a bright outdoor room or a bright indoor room, it is a reflective type using external light such as sunlight or indoor light. Is displayed. On the other hand, when the liquid crystal display device 1 is placed outside a dark room or in a dark room, transmissive display is performed using the illumination device 4 as a backlight.

  In the case of performing the reflective display, in FIG. 5, the external light L0 incident on the liquid crystal panel 2 through the element substrate 6a from the direction of the observation side C passes through the liquid crystal layer 7 and enters the color filter substrate 6b. In the reflection portion R, the light is reflected by the reflection film 17 and supplied to the liquid crystal layer 7 again. On the other hand, when performing transmissive display, the LED 43 of the illumination device 4 in FIG. 3 is turned on, and the light is guided from the light incident surface 42a of the light guide 42 to the light guide 42, and further from the light exit surface 42b. It emits as planar light. The emitted light is supplied to the liquid crystal layer 7 through the opening 34 in the transmission part T as indicated by a symbol L1 in FIG.

  While light is supplied to the liquid crystal layer 7 as described above, the scanning signal and the data signal are specified between the dot electrode 24a on the element substrate 6a side and the linear electrode 24b on the color filter substrate 6b side. A predetermined voltage is applied to the display dot region D, whereby the orientation of the liquid crystal molecules in the liquid crystal layer 7 is controlled for each display dot region D. As a result, the light supplied to the liquid crystal layer 7 is used for display. Modulation is performed for each dot region D. Depending on whether this modulated light passes through the polarizing plate 9a on the observation side in FIG. 3 or not, images such as letters, numbers, figures, etc. are displayed on the observation side and can be viewed from the direction of arrow C. The light shielding film 19 functions as a black mask for preventing light from leaking from between the display dot regions D.

  In the liquid crystal display device 1 of the present embodiment, by performing a photo-etching process on amorphous ITO, both the second metal 38 of the TFD element 33 that is a non-linear resistance element and the dot electrode 24a connected thereto are patterned into a predetermined shape with ITO. did. Since amorphous ITO can be easily etched even with a weak acid, the formed second metal 38 and dot electrode 24a have very high dimensional accuracy. Therefore, it is possible to prevent variations in the quality of display performed using the TFD element 33 and the dot electrode 24a.

  Further, in the liquid crystal display device 1 of the present embodiment, the line wiring 31 and various other wirings are formed of a material having a very low resistance value such as a silver-based metal, a copper-based metal, or an Al—Ni—C alloy. Even when the second metal and the electrode are formed by using ITO having a high resistance value, the overall resistance value of the liquid crystal display device can be kept low. Satisfactory resolution.

(Second embodiment of electro-optical device)
FIG. 2 shows a structure in the vicinity of a TFD element 33 as a nonlinear resistance element, which is a main part of another embodiment of the electro-optical device according to the invention. FIG. 2 shows the structure of the portion corresponding to FIG. 1 in the previous embodiment.

  The structure of the TFD element 33 in FIG. 2 is the same as the structure of the TFD element 33 in the previous embodiment shown in FIG. That is, the TFD element 33 is formed by connecting the first TFD element 33a and the second TFD element 33b in series. The TFD element 33 is formed as follows, for example. That is, first, the first metal 36 of the TFD element 33 and the first layer 31a of the line wiring 31 are formed of TaW (tantalum / tungsten). Next, the insulating film 37 of the TFD element 33 and the second layer 31b of the line wiring 31 are formed by anodic oxidation.

  Next, the second metal 38 of the TFD element 33, the joint 31c with the line wiring 31, and the dot electrode 24a are formed by photoetching using a (amorphous) -ITO as a material. Specifically, first, a-ITO is formed to a uniform thickness by a film forming method such as sputtering, and then the second metal 38 and the like are patterned into a desired shape by etching. In general, normal ITO that has no amorphous structure is difficult to etch, and it is difficult to accurately obtain the dimensions of each element. In contrast, a-ITO is easy to etch, and the dimensions of each element can be accurately obtained. Therefore, the plurality of second metals 38 and the plurality of dot electrodes 24a according to the present embodiment are formed without variation in desired dimensions even though they are formed of ITO. For this reason, display without variation among a plurality of pixels can be performed.

  After the junction 31c with the second metal 38, the dot electrode 24a, and the line wiring is formed by a-ITO, the third layer 31d of the line wiring 31 is then formed by silver-based metal or copper-based metal. At the time of forming the third layer 31d, it is desirable that other wirings formed on the element substrate 6a are simultaneously formed of silver metal or the like. Next, the entire element substrate 6a is annealed by a heating means such as a hot plate. By this annealing, a-ITO is changed to poly-ITO, and its internal structure is stabilized. At the same time, ITO becomes transparent.

  The silver-based metal can be formed from, for example, an APC alloy. Moreover, the said copper-type metal can be formed by HPC (namely, Cu-Mo) alloy, for example. In the Cu-Mo alloy, the Mo concentration is desirably set to about 1.2% by weight with respect to the Cu concentration. The third layer 31d of the line wiring 31 can also be formed of an Al—Ni—C alloy. If the third layer 31d of the line wiring 31 is formed of an APC alloy, HPC alloy, Al—Ni—C alloy or the like, the resistance value of these alloys is low, so that the wiring resistance value can be kept low.

(Modification)
In the above embodiment, the case where both the coloring element 21 and the reflection film 17 are provided in the color filter substrate 6b, which is one substrate, is exemplified. Instead, the reflection film 17 is provided on one substrate, and the coloring element is provided. The present invention can also be applied to a liquid crystal display device in which 21 is provided on the other substrate.

  Moreover, in the said embodiment, although the coloring element 21 and the light shielding film 19 were formed on the same board | substrate, they can also be formed on a different board | substrate.

(First Embodiment of Method for Manufacturing Electro-Optical Device)
Hereinafter, an embodiment of a method for manufacturing an electro-optical device according to the present invention will be described by taking as an example the case of manufacturing the liquid crystal display device 1 shown in FIG. FIG. 9 shows an example of a manufacturing method of a liquid crystal display device as a process diagram. In FIG. 9, steps P1 to P5 are steps for forming the element substrate 6a of FIG. Steps P11 to P18 are steps for forming the color filter substrate 6b of FIG. Steps P21 to P28 are steps for combining the substrates to complete the liquid crystal display device.

  In the manufacturing method of the present embodiment, the element substrate 6a and the color filter substrate 6b shown in FIG. 3 are not formed one by one, but the element substrate 6a has an area large enough to form a plurality of element substrates 6a. A plurality of element substrates 6a are simultaneously formed using an element-side mother base material having As for the color filter substrate 6b, the plurality of color filter substrates 6b are simultaneously formed using a color filter-side mother base material having an area large enough to form the plurality of color filter substrates 6b. The element side mother substrate and the color filter side mother substrate are formed of, for example, translucent glass, translucent plastic, or the like.

  First, in step P1 of FIG. 9, the TFD element 33 of FIG. 1 is formed on the surface of the element-side mother base material. When the third metal 38 of the TFD element 33 is formed, the dot electrode 24a is formed at the same time. Next, in step P2, the alignment film 26a shown in FIG. 5 is formed by coating, printing, or the like, and in step P3, the alignment film 26a is subjected to alignment treatment, for example, rubbing treatment. Next, in step P4, for example, the sealing material 10 of FIG. 3 is formed by printing or the like using an epoxy resin as a material, and in step P5, the spacers 32 of FIG. 5 are dispersed on the surface. As described above, the plurality of element substrates 6a are formed on the element-side mother base material to form the element-side mother substrate.

  Next, in step P11 of FIG. 9, the first layer 16a of the resin layer 16 of FIG. 5 is formed on the surface of the color filter side mother substrate by, for example, a photolithography process using a photosensitive resist material as a material. During this process, an uneven pattern formed by a large number of randomly distributed unevenness is formed on the surface of the first layer 16a.

  Thereafter, in FIG. 5, the second layer 16 b of the same material is thinly applied on the first layer 16 a to form the resin layer 16. The reason why the second layer 16b is laminated is to smooth the surface of the concave portion or the convex portion. Next, in step P12 of FIG. 9, the reflective film 17 of FIG. 5 is formed by photolithography and etching using, for example, Al or an Al alloy as a material. At this time, the light reflecting portion R and the light transmitting portion T are formed by forming the opening 34 for each display dot region D. Since the concavo-convex pattern is formed on the surface of the resin layer 16, the same concavo-convex pattern is also formed on the reflective film 17 laminated thereon. When light hits the reflective layer 17 having the uneven pattern and is reflected, the reflected light becomes scattered light.

  Next, in step P13, the light-shielding film 19 in FIG. 5 is formed into a predetermined pattern (for example, a lattice pattern that fills around a plurality of display dot regions D) by photolithography and etching using, for example, chromium. To form. Next, in the process P14, the coloring element 21 of FIG. 5 is formed. The coloring elements 21 are sequentially formed for each of R, G, and B colors. For example, a coloring material formed by dispersing pigments and dyes of respective colors in a photosensitive resin is formed in a predetermined arrangement by photolithography. Next, in process P15, the overcoat layer 23 in FIG. 5 is formed by photolithography using a photosensitive resin such as an acrylic resin or a polyimide resin as a material.

  Next, in step P16 in FIG. 9, the linear electrode 24b in FIG. 5 is formed by photolithography and etching using ITO as a material, and in step P17, the alignment film 26b in FIG. 5 is formed, and in step P18. A rubbing process is performed as an alignment process. As described above, the plurality of color filter substrates 6b are formed on the color filter side mother base material to form the color filter side mother substrate.

  Thereafter, in step P21 of FIG. 9, the element side mother substrate and the color filter side mother substrate are bonded together. Thus, a large-area panel structure having a structure in which the element-side mother substrate and the color filter-side mother substrate are bonded to each other with the sealant 10 in FIG. 3 sandwiched in the region of each liquid crystal display device is formed.

  Next, the sealing material 10 contained in the large-area panel structure formed as described above is cured in step P22 to bond both mother substrates. Next, in step P23, the panel structure is subjected to primary cutting, that is, primary break, and a medium-area panel structure including a plurality of liquid crystal panels 2 in FIG. A plurality of panel structures are formed. An opening 10a (see FIG. 3) is formed in advance in the sealing material 10 in advance. When the strip-shaped panel structure is formed by the primary break, the opening 10a of the sealing material 10 is exposed to the outside. To do.

  Next, in step P24 of FIG. 9, liquid crystal is injected into each liquid crystal panel portion through the opening 10a of the sealing material, and after the injection is completed, the opening 10a is sealed with resin. Next, in step P25, a second cutting, that is, a secondary break is performed, and the individual liquid crystal panels 2 shown in FIG. 3 are cut out from the strip-shaped panel structure.

  Next, in step P26 of FIG. 9, the driving ICs 3a, 3b, 3c of FIG. 3 are mounted. Next, the polarizing plates 9a and 9b are attached to the liquid crystal panel 2 of FIG. Furthermore, in process P28, the illuminating device 4 of FIG. 3 is attached. Thereby, the liquid crystal display device 1 is completed.

  FIG. 10 shows an embodiment of the TFD element and electrode formation step P1 in FIG. This process is a process for manufacturing wiring other than the TFD element 33, the line wiring 31, and the line wiring 31 shown in FIG. The process for forming the TFD element is roughly divided into a base layer forming process Q1, a process Q2 for forming the first metal 36, a process Q3 for forming the insulating film 37, a process Q4 for forming the second metal 38 and the electrode 24a, The process includes a process Q5 for forming the line wiring 31. In FIG. 1, illustration of the base layer formed by the base layer forming step is omitted.

More specifically, first, in step P31, Ta ₂ O ₅ is formed by sputtering to form an underlayer. Next, in Step P32, TaW (tantalum / tungsten) is deposited by sputtering to a uniform thickness. Next, in step P33, the non-pad-shaped first metal 36 is formed by photolithography, that is, photolithography and etching. Note that resist stripping is performed using an H ₂ SO ₄ solution.

  The non-pad-shaped first metal 36 is a continuous first metal 36 that is not island-shaped. The first metal 36 shown in FIG. 1 is independent in an island shape, one for each dot electrode 24a. In this specification, such an island-independent state is referred to as a pad shape. In the first metal forming step Q2 in FIG. 10, the pad-shaped first metal 36 is not formed suddenly, but the first metal 36 in a state where a plurality of island-shaped first metals 36 are continuous with each other is formed. At this time, the first metal 36 extending linearly continuously is a non-pad-shaped first metal 36.

Next, in step P34, an anodizing process is performed in a citric acid aqueous solution at a voltage of 10 V to form the insulating film 37 of FIG. Next, in the process P35, the first annealing process, that is, the annealing A is performed at a temperature of 320 ° C. This annealing A is performed to adjust the film quality of the insulating film 37. Next, in step P36, unnecessary portions of the insulating film 37 and the first metal 36 are etched by dry etching, and then peeled off with an H ₂ SO ₄ solution to form the pad-shaped first metal 36 and the insulating film 37. To do.

Next, in process P37 of FIG. 10, the ITO which is the material of the second metal 38 and the dot electrode 24a is formed with a uniform thickness by sputtering. The film forming conditions at this time are as follows.
(1) Ar (argon) flow rate: 100 sccm
(2) H ₂ O flow rate: 0 to ₂ sccm
(3) O ₂ flow rate: 0 to 1 sccm
(4) Total pressure: 0.8 Pa
(5) Deposition temperature 23 ° C. (100 ° C. or less)
(6) Film thickness 500mm
At this time, the film forming temperature of 100 ° C. or lower, 23 ° C. in the present embodiment, is lower than the sputtering temperature for normal ITO, and when sputtering is performed at such a low temperature, ITO becomes a (amorphous). -It becomes a film in the state of ITO.

Next, in step P38, the a-ITO is subjected to a photolithography process and an etching process, thereby converting the a-ITO into the second metal 38 of the TFD element 33, the first layer 31a of the line wiring 31, and the dot electrode 24a. And other wirings not shown in FIG. 1 are patterned into a predetermined shape. Here, the etching treatment was performed using oxalic acid (COOH) ₂ (for example, trade name ITO-06N manufactured by Kanto Chemical Co., Ltd.) as an etchant at 40 ° C. for 40 seconds. Since oxalic acid is a weak acid, it is difficult to etch normal ITO, but a-ITO can be etched. Moreover, if a-ITO is etched using oxalic acid, a-ITO can be patterned with very high dimensional accuracy. Therefore, the element area of the TFD element 33 can be formed in a stable dimension without variation, and the area of the dot electrode 24a can be formed in a stable dimension without variation. For this reason, stable display without variation can be performed.

  In addition, by employing wet etching using oxalic acid, the mother substrate can be made larger than when dry etching is used, which is advantageous for mass production of liquid crystal display devices. In addition, by setting the a-ITO film forming conditions and etching conditions as described above, it is possible to improve the reproducibility of the element characteristics of the TFD element 33, that is, the holding characteristics and the writing characteristics, and the element characteristics. High stability can be maintained.

  Next, in the process P39 of FIG. 10, in order to stabilize the chemical structure of the second metal 38, the annealing B that is the second annealing process is performed. Specifically, an annealing process is performed at 250 ° C. for 60 minutes. By performing this annealing B, a-ITO returns to poly-ITO. Further, this annealing B ensures the transparency of ITO and further improves the element characteristics of the TFD element. Also, annealing B can increase the OFF resistance of the TFD element as compared with the case where Cr is used as the second electrode, and hence the retention characteristics of the liquid crystal display device can be improved, and therefore the contrast at high temperature can be increased.

  Next, in Step P40, a wiring metal, for example, an Ag (silver) -based metal, for example, an APC alloy (that is, an Ag—Pd—Cu alloy) is formed with a uniform thickness by a sputtering process. Next, the metal film is subjected to a photolithography process and an etching process to pattern the second layer 31b of the line wiring 31 in FIG. 1 and other wirings (not shown) into a predetermined shape. The second layer 31b is stacked on the first layer 31a formed of ITO. Since ITO has good adhesion to glass or the like, when the metal forming the second layer 31b is a material having low adhesion to glass or the like, an ITO layer may be interposed as the first layer 31a. This is convenient for ensuring adhesion to the substrate 8a.

  As described above, in the method of manufacturing the liquid crystal display device according to this embodiment, when the second metal 38 and the dot electrode 24a are patterned in FIG. 1, the amorphous ITO is subjected to photoetching and patterned. Since amorphous ITO is easy to obtain dimensional accuracy by etching, both the second metal 38 of the TFD element 33 and the dot electrode 24a connected thereto can be formed with high dimensional accuracy. Therefore, it is possible to prevent variations in the quality of display performed using the TFD element 33 and the dot electrode 24a.

  Moreover, according to the liquid crystal display device according to the present embodiment, the line wiring 31 and other wirings are formed of a material having a very low resistance value such as a silver-based metal, a copper-based metal, or an Al—Ni—C alloy. Even when the second metal 38 and the dot electrode 24a are formed by using ITO having a high resistance value, the overall resistance value of the liquid crystal display device can be kept low. Satisfactory uniformity and resolution.

(Modification)
In the above embodiment, the Ag-based metal is formed in the wiring metal sputtering step P40 of FIG. Instead, a copper-based metal, for example, an HPC alloy (that is, a Cu—Mo alloy), for example, an alloy containing 1.2% by weight of Mo with respect to Cu can be formed. Further, an Al—Ni—C alloy film can be formed instead of an Ag-based metal or a Cu-based metal.

(Second Embodiment of Manufacturing Method of Electro-Optical Device)
FIG. 11 shows another embodiment of a method for manufacturing an electro-optical device according to the present invention. This embodiment is different from the previous embodiment shown in FIG. 10 in that the execution timing of the annealing B in the process P41 is modified. In the previous embodiment shown in FIG. 10, annealing B for stabilizing the chemical structure of the second metal 38 in FIGS. 1 and 2 is performed after the photo-etching of the a-ITO and in the formation of the wiring. Went before. On the other hand, in this embodiment, the annealing B process P41 is performed after both the photo-etching process and the wiring forming process of a-ITO.

  Similar to the embodiment shown in FIG. 10, in this embodiment, ITO is provided under the wiring formed of silver-based metal, copper-based metal, Al—Ni—C alloy or the like. It can be used as an adhesion improving layer for other wiring metals. Further, by making the electrode and the wiring material independent, there is no increase in the number of steps and the degree of freedom of the process can be increased.

(Embodiment of electronic device)
Hereinafter, an electronic device according to the present invention will be described with reference to embodiments. In addition, this embodiment shows an example of this invention and this invention is not limited to this embodiment.

  FIG. 12 shows an embodiment of an electronic apparatus according to the invention. The electronic apparatus shown here includes a display information output source 101, a display information processing circuit 102, a power supply circuit 103, a timing generator 104, and a liquid crystal display device 105. The liquid crystal display device 105 includes a liquid crystal panel 107 and a drive circuit 106.

  The display information output source 101 includes a memory such as a RAM (Random Access Memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and various clock signals generated by the timing generator 104. The display information processing circuit 102 is supplied with display information such as a predetermined format image signal.

  Next, the display information processing circuit 102 includes a number of well-known circuits such as an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, and the like, executes processing of input display information, and outputs an image signal. It is supplied to the drive circuit 106 together with the clock signal CLK. Here, the drive circuit 106 is a generic term for an inspection circuit and the like together with a scanning line drive circuit and a data line drive circuit. The power supply circuit 103 supplies a predetermined power supply voltage to each of the above components.

  The liquid crystal display device 105 can be configured similarly to the liquid crystal display device 1 shown in FIG. 3, for example. In the liquid crystal display device 1, since the second metal and the dot electrode of the TFD element were formed by performing photo-etching treatment on a-ITO and further annealing treatment, the TFD element excellent in element characteristics and transparency were ensured. A dot electrode is obtained. Therefore, by using the liquid crystal display device in the present electronic device, an easily viewable display can be performed on the display unit of the electronic device.

  FIG. 13 shows a mobile phone which is another embodiment of the electronic apparatus according to the invention. The mobile phone 120 shown here has a first body 121a and a second body 121b that can be folded around a hinge 122. The first body 121a is provided with a liquid crystal display device 123, an earpiece 124, and an antenna 126. The second body 121b is provided with a plurality of operation buttons 127 and a mouthpiece 128. If the liquid crystal display device 123 is configured by the liquid crystal display device 1 shown in FIG. 3, it is possible to configure a mobile phone that is free from environmental pollution.

  FIG. 14 shows a PDA (Personal Digital Assistant: portable information terminal device) which is still another embodiment of the electronic apparatus according to the present invention. The PDA 150 shown here has a contact type, so-called touch panel type input device 151 on its front panel. The input device 151 is transparent, and a liquid crystal display device 152 as a display unit is disposed below the input device 151.

  The user touches the input surface of the input device 151 with the attached pen-type input tool 153 to select a button or other display displayed on the liquid crystal display device 152 or draw a character, a figure, or the like. And enter the required information. A predetermined calculation is performed on the input information by a computer in the PDA 150, and the result of the calculation is displayed on the liquid crystal display device 152. If the liquid crystal display device 1 shown in FIG. 3 is used as the liquid crystal display device 152, a PDA free from environmental pollution can be configured.

(Modification)
In addition to the mobile phone and PDA described above, the electronic device includes a personal computer, a liquid crystal television, a viewfinder type or a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, A word processor, a workstation, a video phone, a POS terminal, etc. are mentioned.

  The electro-optical device according to the present invention is suitably used as a display device when performing various displays on a mobile phone, a portable information terminal, and other electronic devices. In addition, the method for manufacturing an electro-optical device according to the present invention is preferably used when manufacturing an electro-optical device having components formed of ITO. The electronic device according to the present invention is used as a consumer device such as a mobile phone or a portable information terminal, a measuring instrument or other industrial device.

FIG. 3 is a perspective view illustrating an example of a TFD element that is a main part of an electro-optical device according to the invention. FIG. 10 is a perspective view showing another example of a TFD element that is a main part of an electro-optical device according to the invention. 1 is a perspective view showing a liquid crystal display device, which is an embodiment of an electro-optical device according to the invention, in an exploded state. FIG. It is sectional drawing according to the AA line of FIG. It is sectional drawing which expands and shows the part shown by the arrow B in FIG. It is the top view which looked at the structure shown in FIG. 5 from the arrow C direction. It is a figure which shows the example of an arrangement | sequence of a coloring element. It is a circuit diagram which shows the electrical equivalent circuit of the liquid crystal display device of FIG. FIG. 6 is a process diagram illustrating an embodiment of a method for manufacturing an electro-optical device according to the invention. It is process drawing which shows an example of the content of the main processes of FIG. It is process drawing which shows another example of the content of the main processes of FIG. It is a block diagram which shows one Embodiment of the electronic device which concerns on this invention. It is a perspective view which shows other embodiment of the electronic device which concerns on this invention. It is a perspective view which shows other embodiment of the electronic device which concerns on this invention.

Explanation of symbols

1. 1. liquid crystal display device (electro-optical device), Liquid crystal panels, 3a, 3b, 3c. Driving IC, 4. Lighting device, 6a. Element substrate, 6b. Color filter substrate,
7). Liquid crystal layer, 8a, 8b. Base material, 9a, 9b. Polarizing plate, 10. Sealing material,
10a. Opening, 16. Resin layer, 17. Reflective film, 19. 20. light shielding film; Coloring elements,
22. Color filter, 23. Overcoat layer, 24a. Dot electrode,
24b. Linear electrodes, 26a, 26b. Alignment film, 27. Recess, 31. Line wiring,
32. Spacers, 33. TFD element (nonlinear resistance element), 34. Opening,
36. First metal, 37. Insulating film, 38. Second metal, 41. Overhang,
42. Light guide, 43. LED, 47. Scanning line, 48. Data line,
51. 52. a scanning line driving circuit; Data line driving circuit, 105. Liquid crystal display,
120. Mobile phone (electronic device), 123. Liquid crystal display,
150. 152. PDA (electronic device) A liquid crystal display device; Dot area for display,
G. Cell gap, L0. External light, L1. Transmitted light; Reflector, T. Transmission part

Claims (10)

A substrate,
A non-linear resistance element provided on the substrate and having a laminated structure of a first metal-insulating film-second metal from the substrate side;
A dot electrode provided on the substrate so as to be connected to the second metal of the nonlinear resistance element;
Wiring provided on the substrate,
The second metal and the dot electrode are formed of ITO obtained by polycrystallizing amorphous ITO by annealing,
The electro-optical device is characterized in that the wiring is made of silver-based metal or copper-based metal.   2. The electro-optical device according to claim 1, wherein the silver-based metal is an APC (Ag—Pd—Cu) alloy.   2. The electro-optical device according to claim 1, wherein the copper-based metal is an HPC (High Performance Cu = Cu—Mo) alloy, preferably Cu—Mo (1.2 wt%). . A substrate,
A non-linear resistance element provided on the substrate and having a laminated structure of a first metal-insulating film-second metal from the substrate side;
A dot electrode provided on the substrate so as to be connected to the second metal of the nonlinear resistance element;
Wiring provided on the substrate,
The second metal and the dot electrode are formed of ITO obtained by polycrystallizing amorphous ITO by annealing,
The electro-optical device, wherein the wiring is formed of an Al-Ni-C alloy. Forming a first metal of a non-linear resistance element on a substrate;
Forming an insulating film of a non-linear resistance element on the first metal;
Forming a second metal of a non-linear resistance element on the insulating film,
Forming the second metal comprises:
Forming amorphous ITO planarly;
Patterning the amorphous ITO into the shape of the second metal by photoetching;
And a step of annealing the amorphous ITO to change it to poly-ITO. 6. The electro-optical device manufacturing method according to claim 5, further comprising a step of forming a wiring on the base material, wherein the wiring is formed of a silver-based metal or a copper-based metal. Production method.   7. The method of manufacturing an electro-optical device according to claim 6, wherein the silver-based metal is an APC (Ag—Pd—Cu) alloy.   7. The method of manufacturing an electro-optical device according to claim 6, wherein the copper-based metal is an HPC (High Performance Cu = Cu—Mo) alloy, preferably Cu—Mo (1.2 wt%). Manufacturing method of electro-optical device. 6. The method of manufacturing an electro-optical device according to claim 5, further comprising a step of forming a wiring on the base material, wherein the wiring is formed of an Al-Ni-C alloy. Method. An electronic apparatus comprising the electro-optical device according to claim 1.

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