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JP2005150458A - Resin sealing and forming method of semiconductor chip and resin sealing and forming die - Google Patents

Resin sealing and forming method of semiconductor chip and resin sealing and forming die Download PDF

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JP2005150458A
JP2005150458A JP2003386838A JP2003386838A JP2005150458A JP 2005150458 A JP2005150458 A JP 2005150458A JP 2003386838 A JP2003386838 A JP 2003386838A JP 2003386838 A JP2003386838 A JP 2003386838A JP 2005150458 A JP2005150458 A JP 2005150458A
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substrate
resin
recess
resin sealing
mold
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JP4583020B2 (en
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Masafumi Shimauchi
雅文 島内
Satoshi Nihei
聡 仁平
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Towa Corp
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Towa Corp
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin sealing and forming method which effectively prevents the deformation of a substrate 4 such as the warping or curving of the substrate 4 occurring at resin sealing and forming, and to provide a resin sealing and forming die. <P>SOLUTION: By using the resin sealing and forming die on a die plane 13 supporting a rear face 8 opposed to a front face 7 of the substrate 4 mounting a semiconductor chip 5, a recess 15 having a required equivalent depth C set as a wider range than a product effective range Y of the substrate 4 is provided, also an inside of the recess 15 is reduced in pressure (e.g., an air in the recess 15 is forcibly sucked via a communication groove 17 and a suction hole 16) prior to a filling action of a melted resin 18 into a cavity 12, thereby making an operation of correcting at least a portion of the product effective range Y of the substrate 4 to an equivalent flat-topped attitude. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、樹脂封止成形用金型を用いて、基板表面に装着される半導体チップを樹脂封止成形する樹脂封止成形方法および樹脂封止成形用金型の改良に関する。   The present invention relates to a resin sealing molding method for resin sealing molding of a semiconductor chip mounted on a substrate surface using a resin sealing molding die, and an improvement of the resin sealing molding die.

従来から、樹脂封止成形用金型で、基板に装着した複数個の半導体チップ(電子部品)を一括して樹脂封止成形することが行われている。   2. Description of the Related Art Conventionally, a plurality of semiconductor chips (electronic components) mounted on a substrate are collectively molded with a resin sealing mold.

即ち、従来の樹脂封止成形用金型には、上型と下型とが設けられている。また、樹脂封止成形する基板は、例えば、複数個の半導体チップ(電子部品)と、基板と該チップとを電気的に接続するワイヤとが一方の面に装着するように構成されていると共に、チップ・ワイヤを樹脂封止成形する樹脂成形体部分と樹脂封止成形されない基板外周部とを表面に形成して、基板における裏面には電子部品を装着しない電子部品非装着面を形成して構成されている。また、上型の金型面(上型面)には、加熱溶融化された樹脂材料を注入する樹脂通路と、樹脂通路と連通し且つチップ・ワイヤを嵌装して樹脂封止成形するキャビティとが設けられている。また、下型の金型面(下型面)には、チップ・ワイヤを装着した基板を下型面の所定位置に供給セットできる基板セット用の凹所が設けられていると共に、チップ・ワイヤ装着側を上方向に向けた状態で凹所に供給セットするように構成されている。なお、基板の裏面である電子部品非装着面を供給セットする凹所底面(下型面)は、平坦な面で構成されている。
従って、まず、成形用金型が型開き状態で、且つ、基板のチップ・ワイヤ装着側を上方に向けた状態で、下型の所定位置である凹所に基板を供給セットする。次に、成形用金型を型締めすると共に、キャビティ内に嵌装されたチップ・ワイヤに、予め加熱ヒータにより成形用金型を所定温度に昇温させて樹脂材料を加熱溶融化して溶融樹脂として樹脂通路を介して注入し、次に、チップ・ワイヤに樹脂封止された溶融樹脂が硬化して硬化樹脂を形成して封止済基板を成形するものである。また、成形された封止済基板は、複数個の半導体チップが一括で樹脂封止成形されているので、個々の該チップ毎に切断分離して、個々の製品(パッケージ)に成形されると共に、この封止済基板である製品として有効となる基板の製品有効範囲と切断分離して廃棄される基板の不要樹脂範囲とに分離して成形される。
特開2001−28377号公報
That is, the conventional mold for resin sealing molding is provided with an upper mold and a lower mold. In addition, the substrate for resin sealing molding is configured such that, for example, a plurality of semiconductor chips (electronic components) and a wire that electrically connects the substrate and the chip are mounted on one surface. A resin molded body portion for resin-molding chip wires and a substrate outer peripheral portion that is not resin-sealed molded are formed on the surface, and an electronic component non-mounting surface that does not mount electronic components is formed on the back surface of the substrate. It is configured. In addition, on the upper mold surface (upper mold surface), a resin passage for injecting a heat-melted resin material, a cavity communicating with the resin passage and fitted with a chip wire to form a resin seal And are provided. In addition, the lower mold surface (lower mold surface) is provided with a recess for setting a substrate that can supply and set the substrate on which the chip wire is mounted at a predetermined position on the lower mold surface. It is configured to supply and set in the recess with the mounting side facing upward. The recess bottom surface (lower mold surface) for supplying and setting the electronic component non-mounting surface, which is the back surface of the substrate, is a flat surface.
Accordingly, first, the substrate is supplied and set in a recess at a predetermined position of the lower die with the molding die in the open state and the chip / wire mounting side of the substrate facing upward. Next, the molding die is clamped, and the resin material is heated and melted by heating the molding die to a predetermined temperature with a heater in advance on the chip wire fitted in the cavity to melt the resin. Then, the molten resin sealed with the chip and wire is cured to form a cured resin, and a sealed substrate is formed. In addition, since the molded sealed substrate has a plurality of semiconductor chips that are encapsulated in a resin seal, each individual chip is cut and separated into individual products (packages). The molded product is separated into a product effective range of the substrate that is effective as a product that is the sealed substrate and an unnecessary resin range of the substrate that is cut and separated and discarded.
JP 2001-28377 A

しかしながら、近年、前述した基板および樹脂成形体の厚みが薄くなっていること、並びに、前述した基板がプリント状の基板に加えて、例えば、フィルム状やテープ状で形成された柔軟性のある基板が採用されていること等から、平坦に形成された凹所底面(下型面)に供給セットされた基板は、熱膨張により伸張されることに加えて、基板外周部を成形用金型の金型面で固定して樹脂封止成形するので、少なくとも、基板の製品有効範囲が上向きに反った状態になる基板の変形が頻繁に発生している。   However, in recent years, the thickness of the substrate and the resin molded body has been reduced, and the substrate described above is a flexible substrate formed, for example, in the form of a film or a tape in addition to the printed substrate. Therefore, the substrate set on the flat bottom surface of the recess (lower mold surface) is expanded by thermal expansion, and the outer periphery of the substrate is formed on the molding die. Since it is fixed on the mold surface and resin-sealed and molded, at least the substrate is frequently deformed so that the product effective range of the substrate is warped upward.

ここで、上向きに反った状態になる基板の変形を解決するための方法として、第一に、製品有効範囲以外となる下型面の周縁部に吸引孔を設けること、第二に、凹所底面の所要部位に多孔質部材と該多孔質部材に連通する吸引孔とを設けること、等によって、基板の裏面である電子部品非装着面を凹所底面(下型面)に吸着固定する基板吸着固定方式が採用されている。なお、第一の方法では、製品有効範囲以外に吸引孔を設けるのには、吸引孔で基板裏面を吸引すると、樹脂封止成形時による注入圧力による封止済基板の裏面における吸引部分が膨れたり圧痕ができたりするからである。この吸引孔に代用されるべく、前述した第二の方法にて、製品有効範囲を含む平坦な凹所底面の所要部位に多孔質部材を設ける構造が考えられている。   Here, as a method for solving the deformation of the substrate that is warped upward, first, a suction hole is provided in the peripheral portion of the lower mold surface that is outside the product effective range, and second, the recess A substrate for adsorbing and fixing the electronic component non-mounting surface, which is the back surface of the substrate, to the recess bottom surface (lower mold surface) by providing a porous member and a suction hole communicating with the porous member at a required portion of the bottom surface Adsorption fixing method is adopted. In the first method, the suction hole is provided outside the product effective range. When the back surface of the substrate is sucked by the suction hole, the suction portion on the back surface of the sealed substrate is expanded by the injection pressure at the time of resin sealing molding. This is because there is an indentation. In order to substitute for this suction hole, the structure which provides a porous member in the required part of the flat recess bottom containing the product effective range by the 2nd method mentioned above is considered.

ところが、前述した第一および第二の基板吸着固定方式においても、金型へ基板を供給する前(樹脂封止成形工程前)または樹脂封止成形時による、基板全体が反ったり、もしくは、基板が部分的(局部的)に湾曲したりする等の、様々に変形した基板の変形箇所、特に、製品有効範囲に形成された変形箇所を、平坦に形成された凹所底面で吸引して基板を吸着固定すると、平坦に形成された凹所底面から基板が変形して上方に浮いた状態の基板部分のみを、吸引作用により下方に向けて基板を移動させて吸引して、水平状の姿勢に修正できず、その浮いた状態のままの基板が凹所底面に吸着固定されると考えられる。つまり、この浮いた(変形した)状態のままの基板を、基板裏面と凹所底面とが水平状に形成されている限り、十分に水平状の姿勢に修正することは困難であると考えられる。   However, even in the first and second substrate adsorption fixing methods described above, the entire substrate is warped before the substrate is supplied to the mold (before the resin sealing molding step) or at the time of resin sealing molding, or the substrate The substrate is drawn by sucking the deformed portion of the substrate that has been deformed in various ways (particularly, locally), in particular, the deformed portion formed in the product effective range, with the flat bottom of the recess. If the substrate is sucked and fixed, the substrate is deformed from the flat bottom surface of the recess and lifted upward. Thus, it is considered that the substrate in the floating state cannot be corrected and is adsorbed and fixed to the bottom surface of the recess. In other words, it is considered difficult to correct the substrate in the floated (deformed) state to a sufficiently horizontal posture as long as the back surface of the substrate and the bottom surface of the recess are formed horizontally. .

このことからも、基板および樹脂成形体の厚みが薄型化していくなかで、基板の製品有効範囲が様々に変形した基板に溶融樹脂を樹脂成形体内に注入する時には、基板が浮いた(変形した)状態のままで注入充填するので、特に、ワイヤ部分がキャビティ形成面に接触して、ワイヤの変形・欠損等のワイヤ不良が発生すること、或いは、未充填という不良が発生することの樹脂成形上の諸問題を依然として解決できないと考えられる。さらには、基板の製品有効範囲から切断分離された個々の製品(パッケージ)が不均一な状態で成形されることとなるので、前述したような基板吸着固定方式および平坦な凹所底面で形成された樹脂封止成形用金型で防止することが困難であると考えられる。   For this reason, when the thickness of the substrate and the resin molded body is reduced, the substrate floats (is deformed) when the molten resin is injected into the resin molded body into the substrate in which the product effective range of the substrate is variously deformed. ) Resin molding in which the wire portion is in contact with the cavity forming surface and a wire failure such as deformation or breakage of the wire occurs or a failure such as unfilling occurs. The above problems are still considered unsolvable. Furthermore, since individual products (packages) cut and separated from the product effective range of the substrate are formed in a non-uniform state, they are formed by the substrate suction fixing method and the flat bottom surface of the recess as described above. It is considered difficult to prevent with a mold for resin sealing molding.

そこで、前記技術的課題を解決するための本発明に係る樹脂封止成形方法は、基板4の表面7に装着した半導体チップ5を成形用型の一方1に設けたキャビティ12内に嵌装すると共に、該基板4の裏面8を前記成形用型の他方2の型面13にて支受させた状態で前記成形用型1・2を閉じ合わせ、且つ、この状態で前記キャビティ12内に溶融樹脂18を充填してその基板4の表面7における所要の樹脂封止範囲Xを樹脂封止成形することにより、前記半導体チップ5を樹脂封止成形する半導体チップ5の樹脂封止成形方法であって、前記基板4の裏面8を支受させる前記他方2の型面13に、前記基板4の製品有効範囲Yよりも広くなる範囲として設定された所要の均等深さCを有する凹部15を設けると共に、前記したキャビティ12内への溶融樹脂18の充填作用に先行して前記凹部15内を減圧することにより、前記した基板4の少なくとも製品有効範囲Y部分を均等な面一状の姿勢に修正する作用を行うことを特徴とするものである。   Therefore, in the resin sealing molding method according to the present invention for solving the technical problem, the semiconductor chip 5 mounted on the surface 7 of the substrate 4 is fitted into the cavity 12 provided in one of the molding dies. At the same time, the molding dies 1 and 2 are closed while the back surface 8 of the substrate 4 is supported by the other two mold surfaces 13 of the molding die, and melted in the cavity 12 in this state. This is a resin sealing molding method of a semiconductor chip 5 in which the semiconductor chip 5 is resin-sealed and molded by filling the resin 18 and molding the required resin sealing range X on the surface 7 of the substrate 4 by resin sealing molding. The second mold surface 13 that supports the back surface 8 of the substrate 4 is provided with a recess 15 having a required uniform depth C set as a range wider than the product effective range Y of the substrate 4. Along with the cavity 12 described above Prior to the filling of the molten resin 18 to the inside, the inside of the concave portion 15 is depressurized, so that at least the product effective range Y portion of the substrate 4 is corrected to an even flush posture. It is what.

また、前記技術的課題を解決するための本発明に係る樹脂封止成形用金型は、基板4の表面7に装着した半導体チップ5を成形用型の一方1に設けたキャビティ12内に嵌装すると共に、該基板4の裏面8を前記成形用型の他方2の型面13にて支受させた状態で前記成形用型1・2を閉じ合わせ、且つ、この状態で前記キャビティ12内に溶融樹脂18を充填してその基板4の表面7における所要の樹脂封止範囲Xを樹脂封止成形することにより、前記半導体チップ5を樹脂封止成形する半導体チップ5の樹脂封止成形用金型であって、前記基板4の裏面8を支受させる前記他方2の型面13に、前記基板4の製品有効範囲Yよりも広くなる範囲として設定された所要の均等深さCを有する凹部15を設けると共に、該凹部15内と真空源側とを連通させて構成したことを特徴とするものである。   In addition, a resin-sealing molding die according to the present invention for solving the technical problem is fitted with a semiconductor chip 5 mounted on the surface 7 of the substrate 4 in a cavity 12 provided in one of the molding die 1. And the molds 1 and 2 are closed while the back surface 8 of the substrate 4 is supported by the other mold surface 13 of the mold, and in this state the inside of the cavity 12 The resin chip is filled with the molten resin 18 and the required resin sealing range X on the surface 7 of the substrate 4 is molded by resin sealing. The mold has a required uniform depth C set as a range wider than the product effective range Y of the substrate 4 on the second mold surface 13 that supports the back surface 8 of the substrate 4. A recess 15 is provided, and the inside of the recess 15 and a vacuum source It is characterized in by being configured to communicate with and.

本発明は、樹脂封止成形用金型を用いて、半導体チップ5を樹脂封止成形される基板4の変形を効率良く解決すると共に、樹脂成形上の諸問題を効率良く解決する、樹脂封止成形方法および樹脂封止成形用金型を提供するという優れた効果を奏するものである。   The present invention uses a resin sealing molding die to efficiently solve the deformation of the substrate 4 on which the semiconductor chip 5 is resin-sealed and molded, and to efficiently solve various problems in resin molding. This provides an excellent effect of providing a stop molding method and a mold for resin sealing molding.

本発明における樹脂封止成形用金型を用いて、半導体チップ5を装着した基板4の表面7と対向する裏面8を支受する型面13に、基板4の製品有効範囲Yよりも広くなる範囲として設定された所要の均等深さCを有する凹部15を設けると共に、キャビティ12内への溶融樹脂18の充填作用に先行して凹部15内を減圧する。例えば、減圧作用として、第一に、凹部15と連通し且つ製品有効範囲Y以外となる周縁部位に所要数の吸引孔16を設けること、第二に、凹部水平面Bの所要部位に通気性部材19を設け且つ該通気性部材19と連通する所要数の吸引孔16を設けること、等の減圧作用を用いて、第一では、基板4の裏面8を少なくとも凹部15、吸引孔16を介して基板4を強制的に吸引すること、第二では、基板4の裏面8を通気性部材19、吸引孔16を介して基板4を強制的に吸引することになる。つまりは、前述したような減圧作用を用いて、基板4を強制的に吸引すると、少なくとも基板4の製品有効範囲Yの基板4自体が下方に移動して、凹部15に嵌入する。ならびに、嵌入した基板4における製品有効範囲Y部分は、凹部水平面Bに水平状で吸着固定する。さらに、基板4全体が反ったり湾曲したような変形箇所を、前述した減圧作用により基板を水平状の姿勢に修正する。   The mold surface 13 for supporting the back surface 8 facing the front surface 7 of the substrate 4 on which the semiconductor chip 5 is mounted is wider than the product effective range Y of the substrate 4 by using the resin sealing molding die in the present invention. A recess 15 having a required uniform depth C set as a range is provided, and the inside of the recess 15 is decompressed prior to the filling of the molten resin 18 into the cavity 12. For example, as a pressure reducing action, first, a required number of suction holes 16 are provided in a peripheral portion that communicates with the concave portion 15 and is outside the product effective range Y, and second, a breathable member is provided in the required portion of the concave horizontal plane B. First, the back surface 8 of the substrate 4 is disposed at least through the recess 15 and the suction hole 16 by using a pressure reducing action such as providing the required number of suction holes 16 communicating with the air permeable member 19. Forcibly sucking the substrate 4, and secondly, the substrate 4 is forcibly sucked through the breathable member 19 and the suction hole 16 on the back surface 8 of the substrate 4. In other words, when the substrate 4 is forcibly sucked using the pressure reducing action as described above, at least the substrate 4 itself in the product effective range Y of the substrate 4 moves downward and fits into the recess 15. In addition, the product effective range Y portion of the inserted substrate 4 is adsorbed and fixed horizontally to the concave horizontal plane B. Further, the deformed portion where the entire substrate 4 is warped or curved is corrected to a horizontal posture by the above-described decompression action.

まず、図1および図2を用いて、実施例1を説明する。   First, Example 1 is demonstrated using FIG. 1 and FIG.

図1(1)は、本発明に係る成形用型および樹脂封止成形される基板を用いて、前記成形用型が型開きした状態を示す概略的に示す概略断面図である。図1(2)は、図1(1)に対応する成形用型における他方の型面の概略拡大平面図である。
図2(1)および図2(2)は、図1(1)に対応する成形用型で、基板を支受する実施方法を段階的に拡大して示した概略拡大断面図である。なお、図2(1)および図2(2)には、基板の支受状態を明確にするために、一部省略している。図2(3)は、図1(1)に対応する成形用型で、成形用型が型締めした状態を示す概略的に示す概略断面図である。
FIG. 1 (1) is a schematic cross-sectional view schematically showing a state in which the molding die is opened using the molding die according to the present invention and a substrate to be resin-sealed. FIG. 1 (2) is a schematic enlarged plan view of the other mold surface of the molding die corresponding to FIG. 1 (1).
FIGS. 2 (1) and 2 (2) are schematic enlarged cross-sectional views showing, in a stepwise manner, an implementation method for supporting a substrate with a molding die corresponding to FIG. 1 (1). 2 (1) and 2 (2) are partly omitted in order to clarify the support state of the substrate. FIG. 2 (3) is a schematic cross-sectional view schematically showing a state in which the molding die is clamped by the molding die corresponding to FIG. 1 (1).

即ち、実施例1に係わる樹脂封止成形用金型(成形用型)は、図1(1)に示すように、例えば、一方の型(上型1)と他方の型(下型2)とで構成されている。なお、図例においては、成形用型(上下型1・2)としているが、例えば、左右方向に配置すること、或いは、所要角度に傾斜させた状態での成形用型を採用することもできる。   That is, the resin sealing molding die (molding die) according to Example 1 is, for example, one die (upper die 1) and the other die (lower die 2) as shown in FIG. It consists of and. In the illustrated example, the molding die (upper and lower molds 1 and 2) is used. However, for example, the molding die may be arranged in the left-right direction or inclined at a required angle. .

本実施例1の封止済基板3は、図1(1)に示すように、例えば、プリント状・フィルム状・テープ状の基板4上の所定個所にマトリクス状に配列された半導体チップ5(電子部品)と基板4側と該チップ5とを電気的に接続するワイヤ6とが表面7に装着するように構成されていると共に、基板4の表面7には、該チップ5・ワイヤ6を樹脂封止する樹脂成形体9と樹脂封止されない基板外周部10と、基板4の裏面8には、電子部品等を装着しない面(電子部品非装着面)として形成されて構成されている。   As shown in FIG. 1A, the sealed substrate 3 according to the first embodiment includes, for example, semiconductor chips 5 (in a matrix) arranged at predetermined locations on a printed, film-like, or tape-like substrate 4. The electronic component), the substrate 4 side, and the wire 6 that electrically connects the chip 5 are configured to be attached to the surface 7, and the chip 5 and the wire 6 are attached to the surface 7 of the substrate 4. The resin molded body 9 that is resin-sealed, the substrate outer peripheral portion 10 that is not resin-sealed, and the back surface 8 of the substrate 4 are formed as a surface on which no electronic component or the like is mounted (electronic component non-mounting surface).

成形用型(上下型1・2)には、図1(1)に示すように、一方1の型面(上型面11)に設けた基板4の樹脂成形体9部分を嵌装して樹脂封止するキャビティ12と、キャビティ12と連通し且つ基板4の表面7と接触状態で樹脂材料を供給する樹脂通路(図示なし)と、他方の型面(下型面13)に形成された基板4を所定位置に供給セットする基板セット部14と、を設けて構成されている。
従って、基板4の表面7に装着した半導体チップ5を上型1に設けたキャビティ12内に嵌装すると共に、基板4の裏面8を下型面13にて支受させた状態で上下型1・2を閉じ合わせ(型締めし)、且つ、この状態でキャビティ12内に溶融樹脂18を充填してその基板4の表面7における所要の樹脂封止範囲Xを樹脂封止成形することにより、半導体チップ5を樹脂封止成形するように構成されている。
As shown in FIG. 1A, the molding die (upper and lower molds 1 and 2) is fitted with the resin molded body 9 portion of the substrate 4 provided on one mold surface (upper mold surface 11). A cavity 12 for resin sealing, a resin passage (not shown) that communicates with the cavity 12 and supplies resin material in contact with the surface 7 of the substrate 4, and the other mold surface (lower mold surface 13) are formed. And a substrate setting section 14 for supplying and setting the substrate 4 at a predetermined position.
Accordingly, the semiconductor chip 5 mounted on the surface 7 of the substrate 4 is fitted in the cavity 12 provided in the upper mold 1 and the upper and lower molds 1 are supported with the back surface 8 of the substrate 4 supported by the lower mold surface 13. 2 is closed (clamping), and in this state, the cavity 12 is filled with the molten resin 18 and the required resin sealing range X on the surface 7 of the substrate 4 is molded by resin sealing, The semiconductor chip 5 is configured to be resin-sealed.

さらに、上下型1・2には、図1(1)に示すように、後述する製品有効範囲Yよりも広くなる範囲として設定された、基板セット部14の凹み部分の略中央部分にさらに均等深さCの凹み(彫り込み)を形成した凹部15と、凹部15と連通し且つ後述する製品有効範囲Y以外となる所要部位(図例では凹部15の外周囲における基板セット部水平面Aに開口される。)に配置し且つ凹部15内を減圧する(空気を強制的に吸引する)適宜な減圧機構(図示なし)に連絡する所要数の吸引孔16と、凹部15と吸引孔16との間を連通し且つ基板セット部水平面Aに開口して形成された連通溝17とを設けて構成されている。なお、均等深さCとは、基板セット部水平面Aと凹部水平面Bとの間の深さを示している。また、図例の構成とは他に、例えば、基板セット部14を設けずに凹部15のみで基板を支受するような構成(供給セットする部位を設けない構成)にすること、連通溝17を設けずに凹部15から直接的に吸引孔16に連通すること等を適宜に変更して実施してもよい。
また、図1(2)に示すように、基板4の樹脂成形体9部分をキャビティ12内に嵌装して樹脂封止する範囲を樹脂封止範囲Xとして示していると共に、凹部15の形成範囲は、半導体チップ5・ワイヤ6が装着される製品有効範囲Y(図例の破線部分)よりも広く形成される(図例では樹脂封止範囲Xと略同一範囲で形成される。)と共に、基板4の裏面8の型面(図例では下型面13)で構成されている。
従って、凹部15を設けることにより、上下型1・2を型締めして該チップ5・ワイヤ6を装着した基板4を樹脂封止する時に発生する、基板4が上方に向けて反ったり湾曲したりする従来の基板4の変形を、キャビティ12内への溶融樹脂18の充填作用に先行して凹部15内を減圧する、すなわち、凹部15の周縁部位に形成された連通溝17・吸引孔16を介して凹部15内の空気を吸引することにより、基板4の少なくとも製品有効範囲Yを凹部15に嵌入し且つ凹部15の水平面である凹部水平面B(基板セット部水平面Aよりも下方の位置)に基板4を水平状の姿勢に修正して吸着固定できるように構成されている。つまりは、基板4の少なくとも製品有効範囲Y部分を均等な面一状の姿勢に修正する作用を行うように構成されている。
Further, as shown in FIG. 1 (1), the upper and lower molds 1 and 2 are more evenly arranged in the substantially central portion of the recessed portion of the substrate set portion 14 set as a range wider than the product effective range Y described later. A recess 15 formed with a recess (engraved) with a depth C, and a required portion that communicates with the recess 15 and is outside the product effective range Y to be described later (in the illustrated example, is opened in the horizontal plane A of the substrate set portion in the outer periphery of the recess 15) And a required number of suction holes 16 communicating with an appropriate pressure reduction mechanism (not shown) for reducing the pressure in the recess 15 (forcing air to be sucked), and between the recess 15 and the suction hole 16. And a communication groove 17 formed so as to open in the horizontal plane A of the substrate set portion. The uniform depth C indicates the depth between the substrate set portion horizontal plane A and the concave portion horizontal plane B. In addition to the configuration of the illustrated example, for example, a configuration in which the substrate is supported only by the recess 15 without providing the substrate setting portion 14 (a configuration in which a portion to supply and set is not provided), the communication groove 17 is provided. It may be carried out with appropriate changes such as direct communication from the recess 15 to the suction hole 16 without providing the.
In addition, as shown in FIG. 1 (2), a range in which the resin molded body 9 portion of the substrate 4 is fitted in the cavity 12 and resin-sealed is shown as a resin sealing range X, and the formation of the recess 15 is formed. The range is formed wider than the product effective range Y (the broken line portion in the figure) to which the semiconductor chip 5 and the wire 6 are mounted (in the figure example, it is formed in substantially the same range as the resin sealing range X). The mold surface of the back surface 8 of the substrate 4 (the lower mold surface 13 in the illustrated example) is configured.
Therefore, by providing the recess 15, the substrate 4 is warped or curved upward, which occurs when the upper and lower molds 1 and 2 are clamped and the substrate 4 with the chip 5 and the wire 6 is sealed with resin. The deformation of the conventional substrate 4 is reduced in pressure in the recess 15 prior to the filling of the molten resin 18 into the cavity 12, that is, the communication groove 17 and the suction hole 16 formed in the peripheral portion of the recess 15. By sucking the air in the recess 15 through the concave portion 15, at least the product effective range Y of the substrate 4 is fitted into the recess 15 and the horizontal surface of the recess 15 is a horizontal plane B (position below the horizontal plane A of the substrate set portion). In addition, the substrate 4 can be fixed to the horizontal posture by being sucked and fixed. In other words, at least the product effective range Y portion of the substrate 4 is configured to be corrected to an even flat posture.

ここで、前述したように、凹部15に該チップ5・ワイヤ6を装着した基板4を支受する実施方法については、図2(1)および図2(2)を用いて、以下に詳述する。なお、図2(1)および図2(2)には、前述した基板4の支受状態を明確にするために、一方の型(上型1)を省略している。   Here, as described above, an implementation method for supporting the substrate 4 in which the chip 5 and the wire 6 are mounted in the recess 15 will be described in detail below with reference to FIGS. 2 (1) and 2 (2). To do. In FIG. 2A and FIG. 2B, one mold (upper mold 1) is omitted in order to clarify the support state of the substrate 4 described above.

まず、図2(1)に示すように、図1(1)に示す成形用型(上下型1・2)の各型面11・13との間に供給された樹脂成形体9部分を上方に向けた基板4を、下型2の所定位置である基板セット部14に供給セットする、つまりは、基板4の裏面8(電子部品非装着面)と基板セット部水平面Aとが当接されると略同時に、基板4裏面8と凹部水平面Bとの間における空間領域Z(基板セット部水平面Aと凹部水平面Bとの間)を減圧する。この減圧手段として、空間領域Zの空気を、凹部15・連通溝17・吸引孔16の順路を経て減圧機構で強制的に吸引される。
次に、図2(2)の示すように、前述した減圧状態を保持した状態で、凹部15部分に支受された基板4が下方に向けて移動して、基板セット部水平面Bと当接して凹部15に嵌入された状態となる。このとき、凹部水平面Bに少なくとも製品有効範囲Yとなる基板4が水平状で吸着固定される。すなわち、従来のような平坦に形成された基板セット部14に支受された基板4が上方に向けて反ったり湾曲したりする従来の基板4の変形、つまりは、上下型1・2へ基板4を供給する前(樹脂封止成形工程前)または樹脂封止成形時による様々に変形した基板4における変形箇所、特に、封止済基板3における製品有効範囲Yに形成された変形箇所を水平状に修正して、凹部水平面Bに少なくとも製品有効範囲Yとなる基板4が均等な面一状の姿勢に修正する作用を行う。例えば、フィルム(シート)状の基板4であれば、フィルム(シート)皺が発生する変形箇所においても、均等深さCの凹み(彫り込み)を形成した凹部15に嵌入するので、凹部15内に基板自体が減圧(吸引)作用により下方に移動されて、フィルム自体が緊張した状態で、少なくとも凹部水平面Bに基板4が面一状の姿勢に修正されて支受することになる。
また、一方では、図例に示すように、減圧機構で凹部15内を減圧することと略同時に、図2(1)および図2(2)に示すように、連通溝17および吸引孔16の基板セット部水平面Aに形成された開口部分から基板4の裏面8を基板セット部水平面Aに吸着固定することができるように構成されている。
ところで、前述したように、連通溝17および吸引孔16を凹部15の外周囲、すなわち、製品有効範囲Y以外となる周縁部位に設けるのには、仮に、製品有効範囲Yに対向する下型面13(基板セット部水平面A・凹部水平面Bも含む)に連通溝17および吸引孔16を開口させて基板4を支受した場合、樹脂封止成形時に樹脂の注入圧力により、樹脂封止成形後の封止済基板3の減圧部分(吸引部分)に圧痕・膨らみが形成されること、さらに、樹脂封止成形された半導体チップ5やワイヤ6の損傷を引き起こすことがないように配慮されて構成されている。
First, as shown in FIG. 2 (1), the resin molded body 9 portion supplied between the mold surfaces 11 and 13 of the molding die (upper and lower molds 1 and 2) shown in FIG. The substrate 4 facing the substrate 2 is supplied and set to the substrate setting unit 14 which is a predetermined position of the lower mold 2, that is, the back surface 8 (the electronic component non-mounting surface) of the substrate 4 is brought into contact with the horizontal surface A of the substrate setting unit. At approximately the same time, the space region Z (between the substrate set portion horizontal surface A and the concave horizontal surface B) between the back surface 8 of the substrate 4 and the concave horizontal surface B is decompressed. As this decompression means, the air in the space region Z is forcibly sucked by the decompression mechanism through the forward path of the recess 15, the communication groove 17, and the suction hole 16.
Next, as shown in FIG. 2 (2), the substrate 4 supported by the concave portion 15 moves downward and contacts the substrate set portion horizontal plane B while maintaining the above-described reduced pressure state. Thus, it is in a state of being fitted into the recess 15. At this time, at least the substrate 4 that is in the product effective range Y is adsorbed and fixed in the horizontal direction B of the recess. That is, the deformation of the conventional substrate 4 in which the substrate 4 supported by the flat substrate setting portion 14 as in the prior art is warped or curved upward, that is, the substrate is moved to the upper and lower molds 1 and 2. Before the supply of 4 (before the resin sealing molding step) or variously deformed portions of the substrate 4 deformed at the time of resin sealing molding, in particular, the deformed portion formed in the product effective range Y in the sealed substrate 3 is horizontal. The substrate 4 which is at least the product effective range Y on the concave horizontal surface B is corrected to have a uniform and uniform posture. For example, in the case of a film (sheet) -like substrate 4, even in a deformed portion where a film (sheet) wrinkle is generated, it is inserted into the recess 15 formed with a recess (engraved) with a uniform depth C. When the substrate itself is moved downward by the decompression (suction) action and the film itself is in tension, the substrate 4 is corrected to a flat posture at least on the horizontal surface B of the recess and supported.
On the other hand, as shown in the figure, substantially simultaneously with the decompression of the recess 15 by the decompression mechanism, as shown in FIGS. 2 (1) and 2 (2), the communication grooves 17 and the suction holes 16 The back surface 8 of the substrate 4 can be adsorbed and fixed to the substrate set portion horizontal plane A through the opening formed in the substrate set portion horizontal plane A.
By the way, as described above, in order to provide the communication groove 17 and the suction hole 16 in the outer periphery of the concave portion 15, that is, in the peripheral portion other than the product effective range Y, the lower mold surface facing the product effective range Y is assumed. 13 (including the substrate set portion horizontal plane A and the concave portion horizontal plane B) with the communication groove 17 and the suction hole 16 opened to support the substrate 4, after resin sealing molding due to resin injection pressure during resin sealing molding Constructed so that indentations and bulges are formed in the reduced pressure portion (suction portion) of the sealed substrate 3 and that damage to the resin-sealed semiconductor chip 5 and the wire 6 is not caused. Has been.

ここで、本実施例1における該チップ5・ワイヤ6(樹脂成形体9部分)を装着した基板4を樹脂封止成形する実施方法を、図1(1)および図2の概略断面図を用いて、以下に段階的に詳述する。   Here, an implementation method for resin-sealing molding of the substrate 4 on which the chip 5 and the wire 6 (resin molded body 9 portion) in Example 1 are mounted is shown in FIG. 1 (1) and the schematic cross-sectional view of FIG. The details will be described step by step.

まず、図1(1)に示すように、上下型1・2が型開きした状態で、且つ、基板4の樹脂成形体9部分を上方に向けた状態で上型面11と下型面13との間である下型2の所定位置(基板セット部14)の直上部に供給される。
次に、図2(1)に示すように、基板セット部14の直上部から基板セット部水平面Aに基板4を供給セットすると略同時に、基板4の裏面8と凹部水平面Bとの間で形成される空間領域Zの空気を、連通溝17、吸引孔16の経路を経て、減圧機構で吸引される。このとき、上下型1・2が型締めした状態で、且つ、上下型1・2に埋設された適宜な加熱手段(図示なし)により、加熱溶融化された樹脂材料である溶融樹脂18となるように上下型1・2全体を昇温する。
次に、図2(1)の状態のままで、図2(2)の示すように、基板4の裏面8が下方に向けて移動して、基板セット部底面Bと当接して凹部15および基板セット部14に嵌入して、凹部水平面Bに基板4が水平状に吸着固定された状態となる。
次に、図2(2)に示す状態のままで、図2(3)に示すように、溶融樹脂18が樹脂通路を経てキャビティ12内に嵌装された樹脂成形体9部分を注入充填する。
次に、図示していないが、溶融樹脂18が硬化する所要時間経過後に、樹脂成形体9部分が硬化して、封止済基板3を成形することになる。このとき、減圧機構から基板4の減圧作用を停止することが好ましい。
さらに、最終的に、成形された封止済基板3は、複数個の半導体チップ5が一括で樹脂封止成形されているので、個々の該チップ5毎に切断分離して、製品有効範囲Y内にある個々の製品(パッケージ)を成形されると共に、切断分離された製品有効範囲Y以外の不要樹脂基板範囲(図示なし)は廃棄されることになる。
First, as shown in FIG. 1 (1), the upper mold surface 11 and the lower mold surface 13 with the upper and lower molds 1 and 2 opened and the resin molded body 9 portion of the substrate 4 facing upward. Is supplied directly above a predetermined position of the lower mold 2 (substrate setting unit 14).
Next, as shown in FIG. 2 (1), when the substrate 4 is supplied and set from the upper part of the substrate setting unit 14 to the horizontal surface A of the substrate setting unit, it is formed between the back surface 8 of the substrate 4 and the concave horizontal surface B substantially simultaneously. The air in the space region Z is sucked by the pressure reducing mechanism through the communication groove 17 and the suction hole 16. At this time, the upper and lower molds 1 and 2 are clamped and the molten resin 18 is a resin material heated and melted by appropriate heating means (not shown) embedded in the upper and lower molds 1 and 2. Thus, the entire upper and lower molds 1 and 2 are heated.
Next, in the state of FIG. 2 (1), as shown in FIG. 2 (2), the back surface 8 of the substrate 4 moves downward to come into contact with the bottom surface B of the substrate set portion 15 and the recess 15 and The substrate 4 is inserted into the substrate setting unit 14 and the substrate 4 is horizontally fixed to the concave horizontal surface B by suction.
Next, in the state shown in FIG. 2 (2), as shown in FIG. 2 (3), the molten resin 18 is injected and filled into the resin molded body 9 portion fitted in the cavity 12 through the resin passage. .
Next, although not shown, the resin molded body 9 portion is cured after the required time for the molten resin 18 to cure, and the sealed substrate 3 is molded. At this time, it is preferable to stop the decompression action of the substrate 4 from the decompression mechanism.
In addition, finally, since the molded sealed substrate 3 has a plurality of semiconductor chips 5 collectively resin-sealed and molded, it is cut and separated for each chip 5 and the product effective range Y The individual products (packages) inside are molded, and the unnecessary resin substrate range (not shown) other than the cut and separated product effective range Y is discarded.

次に、図3および図4に基づいて、実施例2を説明する。   Next, Example 2 will be described based on FIGS. 3 and 4.

基本的に、実施例1に準ずるものとして、実施例2においても図1および図2と同一符号を記することにする。
図3(1)は、本発明に係るその他の成形用型および樹脂封止成形される基板を用いて、前記成形用型が型開きした状態を示す概略的に示す概略断面図である。図3(2)は、図3(1)に対応するその他の成形用型における他方の型面の概略拡大平面図である。
図4(1)および図4(2)は、図3(1)に対応するその他の成形用型で、基板4を支受する実施方法を段階的に拡大して示した概略拡大断面図である。なお、図4(1)および図4(2)には、基板の支受状態を明確にするために、一部省略している。図4(3)は、図3(1)に対応するその他の成形用型で、成形用型が型締めした状態を示す概略的に示す概略断面図である。
Basically, the same reference numerals as those in FIG. 1 and FIG.
FIG. 3 (1) is a schematic cross-sectional view schematically showing a state where the molding die is opened using another molding die according to the present invention and a substrate to be resin-sealed. FIG. 3 (2) is a schematic enlarged plan view of the other mold surface in another mold corresponding to FIG. 3 (1).
FIGS. 4 (1) and 4 (2) are schematic enlarged cross-sectional views showing another embodiment of the molding die corresponding to FIG. 3 (1), in which the implementation method for supporting the substrate 4 is enlarged step by step. is there. 4 (1) and 4 (2) are partially omitted in order to clarify the support state of the substrate. FIG. 4 (3) is a schematic cross-sectional view schematically showing a state in which the molding die is clamped by another molding die corresponding to FIG. 3 (1).

即ち、実施例2に係わる樹脂封止成形用金型(成形用型)は、図3(1)に示すように、例えば、一方の型(上型1)と他方の型(下型2)とで構成されている。なお、図例においては、成形用型(上下型1・2)としているが、例えば、左右方向にすることや所要角度に傾斜させた状態での成形用型を採用することもできる。   That is, the resin sealing molding die (molding die) according to Example 2 is, for example, one mold (upper mold 1) and the other mold (lower mold 2) as shown in FIG. 3 (1). It consists of and. In the example shown in the figure, the molding die (upper and lower molds 1 and 2) is used. However, for example, a molding die in the left-right direction or inclined at a required angle may be employed.

本実施例2の封止済基板3は、図3(1)に示すように、例えば、プリント状・フィルム状・テープ状の基板4上の所定個所にマトリクス状に配列された半導体チップ5(電子部品)と基板4側と該チップ5とを電気的に接続するワイヤ6とが表面7に装着するように構成されていると共に、基板4の表面7には、該チップ5・ワイヤ6を樹脂封止する樹脂成形体9と樹脂封止されない基板外周部10と、基板4の裏面8には、電子部品等を装着しない面(電子部品非装着面)として形成されて構成されている。   As shown in FIG. 3A, the sealed substrate 3 of the second embodiment includes, for example, semiconductor chips 5 arranged in a matrix at predetermined locations on a printed, film-like, or tape-like substrate 4. The electronic component), the substrate 4 side, and the wire 6 that electrically connects the chip 5 are configured to be attached to the surface 7, and the chip 5 and the wire 6 are attached to the surface 7 of the substrate 4. The resin molded body 9 that is resin-sealed, the substrate outer peripheral portion 10 that is not resin-sealed, and the back surface 8 of the substrate 4 are formed as a surface on which no electronic component or the like is mounted (electronic component non-mounting surface).

成形用型(上下型1・2)には、図3(1)に示すように、一方の型面(上型面11)に設けた基板4の樹脂成形体9部分を嵌装して樹脂封止するキャビティ12と、キャビティ12と連通し且つ基板4の表面7と接触状態で樹脂材料を供給する樹脂通路(図示なし)と、他方の型面(下型面13)に形成された基板4を所定位置に供給セットする基板セット部14とを設けて構成されている。
従って、基板4の表面7に装着した半導体チップ5を上型1に設けたキャビティ12内に嵌装すると共に、基板4の裏面8を下型面13にて支受させた状態で上下型1・2を閉じ合わせ(型締めし)、且つ、この状態でキャビティ12内に溶融樹脂18を充填してその基板4の表面7における所要の樹脂封止範囲Xを樹脂封止成形することにより、半導体チップ5を樹脂封止成形するように構成されている。
As shown in FIG. 3 (1), the molding die (upper and lower molds 1 and 2) is fitted with a resin molded body 9 portion of the substrate 4 provided on one mold surface (upper mold surface 11). A cavity 12 to be sealed, a resin passage (not shown) that communicates with the cavity 12 and supplies resin material in contact with the surface 7 of the substrate 4, and a substrate formed on the other mold surface (lower mold surface 13) And a substrate setting unit 14 for supplying and setting 4 to a predetermined position.
Accordingly, the semiconductor chip 5 mounted on the surface 7 of the substrate 4 is fitted in the cavity 12 provided in the upper mold 1 and the upper and lower molds 1 are supported with the back surface 8 of the substrate 4 supported by the lower mold surface 13. 2 is closed (clamping), and in this state, the cavity 12 is filled with the molten resin 18 and the required resin sealing range X on the surface 7 of the substrate 4 is molded by resin sealing, The semiconductor chip 5 is configured to be resin-sealed.

さらに、上下型1・2には、後述する製品有効範囲Yよりも広くなる範囲として設定された、基板セット部14の凹み部分の略中央部分にさらに均等深さCの凹み(彫り込み)を形成した凹部15と、凹部15と連通し且つ凹部水平面Bの所要部位(図例では製品有効範囲Yと略同一範囲に形成される部位)に配置した通気性部材19と、通気性部材19と連通し且つ凹部15内を減圧する(空気を強制的に吸引する)適宜な減圧機構(図示なし)に連絡する所要数の吸引孔16とを設けて構成されている。なお、均等深さCとは、基板セット部水平面Aと凹部水平面Bとの間の深さを示している。
また、図例の構成とは他に、例えば、基板セット部14を設けずに凹部15のみで基板を支受するような構成(供給セットする部位を設けない構成)にすることを適宜に変更して実施してもよい。
また、図3(2)に示すように、基板4の樹脂成形体9部分をキャビティ12内に嵌装して樹脂封止する範囲を樹脂封止範囲Xとして示していると共に、凹部15の形成範囲は、半導体チップ5・ワイヤ6が装着される製品有効範囲Yよりも広く形成される(図例では樹脂封止範囲Xと略同一範囲で形成される。)と共に、基板4の裏面8の型面(図例では下型面13)で構成されている。
従って、凹部15を設けることにより、上下型1・2を型締めして該チップ5・ワイヤ6を装着した基板4を樹脂封止する時に発生する、基板4が上方に向けて反ったり湾曲したりする従来の基板4の変形を、キャビティ12内への溶融樹脂18の充填作用に先行して凹部15内を減圧する、すなわち、凹部水平面Bの所要部位に形成された通気性部材19、吸引孔16を介して凹部15内の空気を吸引することにより、基板4の少なくとも製品有効範囲Yを凹部15に嵌入し且つ凹部15の水平面である凹部水平面B(基板セット部水平面Aよりも下方の位置)に基板4を水平状の姿勢に修正して吸着固定できるように構成されている。つまりは、基板4の少なくとも製品有効範囲Y部分を均等な面一状の姿勢に修正する作用を行うように構成されている。
Further, the upper and lower molds 1 and 2 are formed with a recess (engraved) with a uniform depth C at a substantially central portion of the recessed portion of the substrate set portion 14 set as a range wider than the product effective range Y described later. The recessed portion 15, the breathable member 19 that is in communication with the recessed portion 15 and disposed in a required portion of the recessed portion horizontal plane B (the portion formed in the substantially same range as the product effective range Y in the illustrated example), and the breathable member 19. In addition, a required number of suction holes 16 communicating with an appropriate decompression mechanism (not shown) for decompressing the inside of the recess 15 (forcing the air to be sucked) are provided. The uniform depth C indicates the depth between the substrate set portion horizontal plane A and the concave portion horizontal plane B.
In addition to the configuration of the illustrated example, for example, a configuration in which the substrate is supported only by the recess 15 without providing the substrate setting portion 14 (a configuration in which a supply setting portion is not provided) is appropriately changed. May be implemented.
Further, as shown in FIG. 3B, the resin sealing range X is shown as a range where the resin molded body 9 portion of the substrate 4 is fitted into the cavity 12 and sealed, and the recess 15 is formed. The range is formed wider than the product effective range Y in which the semiconductor chip 5 and the wire 6 are mounted (in the illustrated example, it is formed in substantially the same range as the resin sealing range X), and the back surface 8 of the substrate 4 is formed. It comprises a mold surface (lower mold surface 13 in the example).
Therefore, by providing the recess 15, the substrate 4 is warped or curved upward, which occurs when the upper and lower molds 1 and 2 are clamped and the substrate 4 with the chip 5 and the wire 6 is sealed with resin. The deformation of the conventional substrate 4 is reduced by reducing the pressure in the concave portion 15 prior to the filling of the molten resin 18 into the cavity 12, that is, the breathable member 19 formed at a required portion of the concave horizontal plane B, suction By sucking the air in the recess 15 through the hole 16, at least the product effective range Y of the substrate 4 is fitted into the recess 15, and the recess horizontal plane B (lower than the substrate set portion horizontal plane A) is the horizontal plane of the recess 15. At the position), the substrate 4 is corrected to a horizontal posture and can be sucked and fixed. In other words, at least the product effective range Y portion of the substrate 4 is configured to be corrected to an even flat posture.

ここで、前述したように、凹部15に該チップ5・ワイヤ6を装着した基板4を支受する実施方法については、図4(1)および図4(2)を用いて、以下に詳述する。なお、図4(1)および図4(2)には、前述した基板4の支受状態を明確にするために、一方の型(上型1)を省略している。   Here, as described above, an implementation method for supporting the substrate 4 in which the chip 5 and the wire 6 are mounted in the recess 15 will be described in detail below with reference to FIGS. 4 (1) and 4 (2). To do. In FIGS. 4A and 4B, one mold (upper mold 1) is omitted in order to clarify the support state of the substrate 4 described above.

まず、図4(1)に示すように、図3(1)に示す成形用型(上下型1・2)の各型面11・13との間に供給された樹脂成形体9部分を上方に向けた基板4を、下型2の所定位置である基板セット部14に供給セットする、つまりは、基板4の裏面8(電子部品非装着面)と基板セット部水平面Aとが当接されると略同時に、基板4裏面8と凹部水平面Bとの間における空間領域Z(基板セット部水平面Aと凹部水平面Bとの間)を減圧する。この減圧手段として、空間領域Zの空気を、凹部15・通気性部材19・吸引孔16の順路を経て減圧機構で強制的に吸引される。
次に、図4(2)の示すように、前述した減圧状態を保持した状態で、凹部15部分に支受された基板4が下方に向けて移動して、基板セット部水平面Bと当接して凹部15に嵌入された状態となる。このとき、凹部水平面Bに少なくとも製品有効範囲Yとなる基板4が水平状で吸着固定される。すなわち、従来のような平坦に形成された基板セット部14に支受された基板4が上方に向けて反ったり湾曲したりする従来の基板4の変形、つまりは、上下型1・2へ基板4を供給する前(樹脂封止成形工程前)または樹脂封止成形時による様々に変形した基板4における変形箇所、特に、封止済基板3における製品有効範囲Yに形成された変形箇所を水平状に修正して、凹部水平面Bに少なくとも製品有効範囲Yとなる基板4が均等な面一状の姿勢に修正する作用を行う。例えば、フィルム(シート)状の基板4であれば、フィルム(シート)皺が発生する変形箇所においても、均等深さCの凹み(彫り込み)を形成した凹部15に嵌入するので、凹部15内に基板自体が減圧(吸引)作用により下方に移動されて、フィルム自体が緊張した状態で、少なくとも凹部水平面Bに基板4が面一状の姿勢に修正されて支受することになる。
First, as shown in FIG. 4 (1), the resin molded body 9 portion supplied between the molding surfaces 11 and 13 of the molding die (upper and lower molds 1 and 2) shown in FIG. The substrate 4 facing the substrate 2 is supplied and set to the substrate setting unit 14 which is a predetermined position of the lower mold 2, that is, the back surface 8 (the electronic component non-mounting surface) of the substrate 4 is brought into contact with the horizontal surface A of the substrate setting unit. At approximately the same time, the space region Z (between the substrate set portion horizontal surface A and the concave horizontal surface B) between the back surface 8 of the substrate 4 and the concave horizontal surface B is decompressed. As this decompression means, the air in the space region Z is forcibly sucked by the decompression mechanism through the forward path of the recess 15, the air-permeable member 19, and the suction hole 16.
Next, as shown in FIG. 4 (2), the substrate 4 supported by the concave portion 15 moves downward and contacts the substrate set portion horizontal plane B while maintaining the above-described reduced pressure state. Thus, it is in a state of being fitted into the recess 15. At this time, at least the substrate 4 that is in the product effective range Y is adsorbed and fixed in the horizontal direction B of the recess. That is, the deformation of the conventional substrate 4 in which the substrate 4 supported by the flat substrate setting portion 14 as in the prior art is warped or curved upward, that is, the substrate is moved to the upper and lower molds 1 and 2. Before the supply of 4 (before the resin sealing molding step) or variously deformed portions of the substrate 4 deformed at the time of resin sealing molding, in particular, the deformed portion formed in the product effective range Y in the sealed substrate 3 is horizontal. The substrate 4 which is at least the product effective range Y on the concave horizontal surface B is corrected to have a uniform and uniform posture. For example, in the case of a film (sheet) -like substrate 4, even in a deformed portion where a film (sheet) wrinkle is generated, it is inserted into the recess 15 formed with a recess (engraved) with a uniform depth C. When the substrate itself is moved downward by the decompression (suction) action and the film itself is in tension, the substrate 4 is corrected to a flat posture at least on the horizontal surface B of the recess and supported.

ここで、本実施例2における該チップ5・ワイヤ6(樹脂成形体9部分)を装着した基板4を樹脂封止成形する実施方法を、図3(1)および図4の概略断面図を用いて、以下に段階的に詳述する。   Here, an implementation method of resin sealing molding of the substrate 4 on which the chip 5 and the wire 6 (resin molded body 9 portion) in Example 2 are mounted is shown in FIG. 3A and the schematic sectional view of FIG. The details will be described step by step.

まず、図3(1)に示すように、上下型1・2が型開きした状態で、且つ、基板4の樹脂成形体9部分を上方に向けた状態で上型面11と下型面13との間である下型2の所定位置(基板セット部14)の直上部に供給される。
次に、図4(1)に示すように、基板セット部14の直上部から基板セット部水平面Aに基板4を供給セットすると略同時に、基板4の裏面8と凹部水平面Bとの間で形成される空間領域Zの空気を、通気性部材19、吸引孔16の経路を経て、減圧機構で吸引される。このとき、上下型1・2が型締めした状態で、且つ、上下型1・2に埋設された適宜な加熱手段(図示なし)により、加熱溶融化された樹脂材料である溶融樹脂18となるように上下型1・2全体を昇温する。
次に、図4(1)の状態のままで、図4(2)の示すように、基板4の裏面8が下方に向けて移動して、基板セット部底面Bと当接して凹部15および基板セット部14に嵌入して、凹部水平面Bに基板4が水平状に吸着固定された状態となる。
次に、図4(2)に示す状態のままで、図4(3)に示すように、溶融樹脂18が樹脂通路を経てキャビティ12内に嵌装された樹脂成形体9部分を注入充填する。
次に、図示していないが、溶融樹脂18が硬化する所要時間経過後に、樹脂成形体9部分が硬化して、封止済基板3を成形することになる。このとき、減圧機構から基板4の減圧作用を停止することが好ましい。
さらに、最終的に、成形された封止済基板3は、複数個の半導体チップ5が一括で樹脂封止成形されているので、個々の該チップ5毎に切断分離して、製品有効範囲Y内にある個々の製品(パッケージ)に成形されると共に、切断分離された製品有効範囲Y以外の不要樹脂基板範囲(図示なし)は廃棄されることになる。
First, as shown in FIG. 3 (1), the upper mold surface 11 and the lower mold surface 13 with the upper and lower molds 1 and 2 opened and the resin molded body 9 portion of the substrate 4 facing upward. Is supplied directly above a predetermined position of the lower mold 2 (substrate setting unit 14).
Next, as shown in FIG. 4 (1), when the substrate 4 is supplied and set to the substrate setting portion horizontal plane A from directly above the substrate setting portion 14, it is formed between the back surface 8 of the substrate 4 and the concave horizontal surface B substantially simultaneously. The air in the space region Z is sucked by the decompression mechanism through the path of the air permeable member 19 and the suction hole 16. At this time, the upper and lower molds 1 and 2 are clamped and the molten resin 18 is a resin material heated and melted by appropriate heating means (not shown) embedded in the upper and lower molds 1 and 2. Thus, the entire upper and lower molds 1 and 2 are heated.
Next, in the state of FIG. 4A, as shown in FIG. 4B, the back surface 8 of the substrate 4 is moved downward to come into contact with the bottom surface B of the substrate setting unit 15 and The substrate 4 is inserted into the substrate setting unit 14 and the substrate 4 is horizontally fixed to the concave horizontal surface B by suction.
Next, in the state shown in FIG. 4 (2), as shown in FIG. 4 (3), the molten resin 18 is injected and filled into the resin molded body 9 portion fitted in the cavity 12 through the resin passage. .
Next, although not shown, the resin molded body 9 portion is cured after the required time for the molten resin 18 to cure, and the sealed substrate 3 is molded. At this time, it is preferable to stop the decompression action of the substrate 4 from the decompression mechanism.
In addition, finally, since the molded sealed substrate 3 has a plurality of semiconductor chips 5 collectively resin-sealed and molded, it is cut and separated for each chip 5 and the product effective range Y Unnecessary resin substrate areas (not shown) other than the product effective area Y that has been molded and separated into individual products (packages) are discarded.

以上より、本実施例1および本実施例2において、従来の樹脂封止成形用金型で解決することができなかった、一方の型(上型1)のキャビティ12天面にワイヤ6が接触し易くワイヤ6を変形或いは断線すること、或いは、未充填という不良が発生すること、等の樹脂成形上の諸問題を効率良く解決することができる。さらには、基板4における製品有効範囲Yから切断分離された個々の製品(パッケージ)が不均一な状態で成形されることがなく、前述したような凹部15を設けた樹脂封止成形用金型で、キャビティ11内への溶融樹脂18の充填作用に先行して凹部15内を減圧することにより、基板4の少なくとも製品有効範囲Y部分を均等な面一状の姿勢に修正する作用を行うことができる。   From the above, the wire 6 contacts the top surface of the cavity 12 of one mold (upper mold 1), which could not be solved by the conventional mold for resin sealing molding in the first embodiment and the second embodiment. This makes it possible to efficiently solve various problems in resin molding, such as deformation or disconnection of the wire 6 or the occurrence of unfilled defects. Furthermore, the individual product (package) cut and separated from the product effective range Y in the substrate 4 is not molded in a non-uniform state, and the resin sealing molding die provided with the recess 15 as described above. Thus, by reducing the pressure in the recess 15 prior to the filling of the molten resin 18 into the cavity 11, the effect of correcting at least the product effective range Y portion of the substrate 4 to an even flat posture is performed. Can do.

なお、本実施例1・2において、基板4を凹部15で支受して減圧するタイミングは、成形用型が型開きしていても、型締め途中でも、型締め完了後でも、溶融樹脂18がキャビティ12内に注入前であれば、連続的或いは断続的に、適宜に変更して実施できる。
また、本実施例1・2における基板セット部14、凹部15、吸引孔16、連通溝17、通気性部材19、減圧機構については、図例に限定されるものでなく、例えば、基板セット部14を上型面11または成形用型1・2の各型面11・13に設けること、基板セット部14や凹部15の側面を垂直に形成せずに、基板4が凹部15に嵌入しやすい適宜な形状(例えば、テーパ形状)で形成すること、吸引孔16の平面形状を丸状でなく多角形状で形成すること、所要個の吸引孔16を図の垂直方向に各別に減圧機構へ連絡するのではなく成形用型内で吸引孔16を統合した経路構成にすること、或いは、基板4を成形用型へ支受して減圧機構で減圧(吸引)する方法として、実施例1では、すべての吸引孔16から略同時または段階的に吸引すること、或いは、凹部15の外周囲に吸引孔16を一重でなく幾重に設けること、等の前述した内容を踏まえたうえで、適宜に取捨選択して実施することもできる。
In the first and second embodiments, the timing at which the substrate 4 is supported by the recess 15 and depressurized is the molten resin 18 even when the molding die is opened, in the middle of clamping, or after the clamping is completed. If it is before injection into the cavity 12, it can be carried out with appropriate changes continuously or intermittently.
Further, the substrate setting part 14, the recess 15, the suction hole 16, the communication groove 17, the air permeable member 19, and the pressure reducing mechanism in the first and second embodiments are not limited to the illustrated examples. For example, the substrate setting part 14 is provided on the upper mold surface 11 or the mold surfaces 11 and 13 of the molds 1 and 2, and the substrate 4 is easily fitted into the recess 15 without forming the side surfaces of the substrate setting portion 14 and the recess 15 vertically. Forming in an appropriate shape (for example, taper shape), forming the planar shape of the suction hole 16 in a polygonal shape instead of a round shape, and communicating the required number of suction holes 16 to the pressure reducing mechanism in the vertical direction in the figure. In Example 1, as a method of integrating the suction holes 16 in the molding die instead of making it, or as a method of supporting the substrate 4 to the molding die and reducing the pressure (suction) with the pressure reducing mechanism, Almost simultaneously or stepwise from all the suction holes 16 To pull, or be provided Ikue not single out around the suction holes 16 of the recess 15, after light of the above-mentioned contents etc., it can also be carried out sift appropriately.

また、二枚型構造、トランスファー成形、基板4の樹脂成形体9部分を上方に向けて成形用型へ供給すること、キャビティ12内に樹脂材料を供給する樹脂通路を基板4と接触した状態で設けること、等の構成で説明した。これに限らず、例えば、二枚型構造を含む所要枚の金型構造(例えば三枚型構造)にすること、樹脂通路を設けないトランスファーレス成形である基板浸漬成形(基板圧縮成形)で実施すること、基板4の樹脂成形体9部分を下方に向けて成形用型へ供給する(つまり、上型面11に凹部15を形成する。)こと、基板4と非接触状態にしてキャビティ12形成面の適宜な個所に単数個或いは複数個の樹脂通路12を設けること、等の前述した内容を踏まえたうえで、適宜に取捨選択して実施することもできる。   In addition, the two-sheet structure, transfer molding, the resin molded body 9 portion of the substrate 4 is supplied upward to the molding die, and the resin passage for supplying the resin material into the cavity 12 is in contact with the substrate 4. It was described in the configuration such as providing. Not limited to this, for example, a required mold structure including a two-sheet structure (for example, a three-sheet structure), and substrate immersion molding (substrate compression molding), which is transferless molding without a resin passage, is performed. The resin molded body 9 portion of the substrate 4 is supplied downward to the molding die (that is, the recess 15 is formed in the upper mold surface 11), and the cavity 12 is formed in a non-contact state with the substrate 4. In consideration of the above-described contents such as providing a single or a plurality of resin passages 12 at appropriate positions on the surface, it is possible to carry out by selecting appropriately.

また、封止済基板3における樹脂成形体9部分が一個のものを対象として説明しているが、例えば、複数個の樹脂成形体9を形成された封止済基板3を採用してもよい。この場合、複数個の樹脂成形体9に対応して、少なくとも、キャビティ12、凹部15、等も同複数個或いは一括して単数個を設けて適宜に実施することもできる。
また、基板4自体の形状も四角形でなく、例えば、円形や多角形等の適宜な形状をした基板4に採用することもできる。さらに、本実施例では、半導体チップ5・ワイヤ6を装着された基板4を対象として説明しているが、他の基板としては、例えば、バンプを備えたフリップチップ基板に採用すること、或いは、ウエハーレベルパッケージにも採用することもできる。
Moreover, although the resin molded body 9 portion in the sealed substrate 3 is described as one object, for example, a sealed substrate 3 in which a plurality of resin molded bodies 9 are formed may be employed. . In this case, at least the cavity 12, the recesses 15, etc. can be provided correspondingly to the plurality of resin molded bodies 9, or a single unit can be provided at a time.
Further, the shape of the substrate 4 itself is not a quadrangle, and may be employed for the substrate 4 having an appropriate shape such as a circle or a polygon. Further, in this embodiment, the substrate 4 on which the semiconductor chip 5 and the wire 6 are mounted is described. However, as another substrate, for example, a flip chip substrate provided with bumps may be adopted, or It can also be used for wafer level packages.

本発明は、前述した実施例のものに限定されるものでなく、本発明の趣旨を逸脱しない範囲内で、必要に応じて、任意に且つ適宜に変更・選択して採用することができるものである。   The present invention is not limited to the above-described embodiments, and can be arbitrarily modified and selected as necessary within a range not departing from the gist of the present invention. It is.

図1(1)は、本発明に係る成形用型および樹脂封止成形される基板を用いて、前記成形用型が型開きした状態を示す概略的に示す概略断面図である。図1(2)は、図1(1)に対応する成形用型における他方の型面の概略拡大平面図である。FIG. 1 (1) is a schematic cross-sectional view schematically showing a state in which the molding die is opened using the molding die according to the present invention and a substrate to be resin-sealed. FIG. 1 (2) is a schematic enlarged plan view of the other mold surface of the molding die corresponding to FIG. 1 (1). 図2(1)および図2(2)は、図1(1)に対応する成形用型で、基板を支受する実施方法を段階的に拡大して示した概略拡大断面図である。図2(3)は、図1(1)に対応する成形用型で、成形用型が型締めした状態を示す概略的に示す概略断面図である。FIGS. 2 (1) and 2 (2) are schematic enlarged cross-sectional views showing, in a stepwise manner, an implementation method for supporting a substrate with a molding die corresponding to FIG. 1 (1). FIG. 2 (3) is a schematic cross-sectional view schematically showing a state in which the molding die is clamped by the molding die corresponding to FIG. 1 (1). 図3(1)は、本発明に係るその他の成形用型および樹脂封止成形される基板を用いて、前記成形用型が型開きした状態を示す概略的に示す概略断面図である。図3(2)は、図3(1)に対応するその他の成形用型における他方の型面の概略拡大平面図である。FIG. 3 (1) is a schematic cross-sectional view schematically showing a state where the molding die is opened using another molding die according to the present invention and a substrate to be resin-sealed. FIG. 3 (2) is a schematic enlarged plan view of the other mold surface in another mold corresponding to FIG. 3 (1). 図4(1)および図4(2)は、図3(1)に対応するその他の成形用型で、基板を支受する実施方法を段階的に拡大して示した概略拡大断面図である。図4(3)は、図3(1)に対応するその他の成形用型で、成形用型が型締めした状態を示す概略的に示す概略断面図である。FIGS. 4 (1) and 4 (2) are schematic enlarged cross-sectional views showing, in a step-by-step manner, an implementation method for supporting a substrate with another molding die corresponding to FIG. 3 (1). . FIG. 4 (3) is a schematic cross-sectional view schematically showing a state in which the molding die is clamped by another molding die corresponding to FIG. 3 (1).

符号の説明Explanation of symbols

1 一方の型
2 他方の型
3 封止済基板
4 基板
5 半導体チップ(電子部品)
6 ワイヤ
7 表面
8 裏面
9 樹脂成形体
10 基板外周部
11 上型面
12 キャビティ
13 下型面
14 基板セット部
15 凹部
16 吸引孔
17 連通溝
18 溶融樹脂
19 通気性部材
A 基板セット部底面
B 凹部底面
C 均等深さ
X 樹脂封止範囲
Y 製品有効範囲
Z 空間領域
DESCRIPTION OF SYMBOLS 1 One type | mold 2 The other type | mold 3 Substrate already sealed 4 Substrate 5 Semiconductor chip (electronic component)
6 Wire 7 Surface 8 Back 9 Resin molded body 10 Substrate outer periphery 11 Upper mold surface 12 Cavity 13 Lower mold surface 14 Substrate set portion 15 Recess 16 Suction hole 17 Communication groove 18 Molten resin 19 Breathable member A Substrate set portion bottom B Recess Bottom C Uniform depth X Resin sealing range Y Product effective range Z Space area

Claims (2)

基板の表面に装着した半導体チップを成形用型の一方に設けたキャビティ内に嵌装すると共に、該基板の裏面を前記成形用型の他方の型面にて支受させた状態で前記成形用型を閉じ合わせ、且つ、この状態で前記キャビティ内に溶融樹脂を充填してその基板の表面における所要の樹脂封止範囲を樹脂封止成形することにより、前記半導体チップを樹脂封止成形する半導体チップの樹脂封止成形方法であって、
前記基板の裏面を支受させる前記他方の型面に、前記基板の製品有効範囲よりも広くなる範囲として設定された所要の均等深さを有する凹部を設けると共に、前記したキャビティ内への溶融樹脂の充填作用に先行して前記凹部内を減圧することにより、前記した基板の少なくとも製品有効範囲部分を均等な面一状の姿勢に修正する作用を行うことを特徴とする半導体チップの樹脂封止成形方法。
The semiconductor chip mounted on the surface of the substrate is fitted into a cavity provided on one side of the molding die, and the back surface of the substrate is supported by the other mold surface of the molding die. A semiconductor that molds the semiconductor chip by closing the mold and filling the cavity with the molten resin in this state and molding the required resin sealing range on the surface of the substrate by resin sealing molding It is a resin sealing molding method of a chip,
The other mold surface for supporting the back surface of the substrate is provided with a recess having a required uniform depth set as a range wider than the product effective range of the substrate, and the molten resin into the cavity described above The resin sealing of a semiconductor chip is characterized in that at least the product effective range portion of the substrate is corrected to an even flat posture by reducing the pressure inside the recess prior to the filling operation of Molding method.
基板の表面に装着した半導体チップを成形用型の一方に設けたキャビティ内に嵌装すると共に、該基板の裏面を前記成形用型の他方の型面にて支受させた状態で前記成形用型を閉じ合わせ、且つ、この状態で前記キャビティ内に溶融樹脂を充填してその基板の表面における所要の樹脂封止範囲を樹脂封止成形することにより、前記半導体チップを樹脂封止成形する半導体チップの樹脂封止成形用金型であって、
前記基板の裏面を支受させる前記他方の型面に、前記基板の製品有効範囲よりも広くなる範囲として設定された所要の均等深さを有する凹部を設けると共に、該凹部内と真空源側とを連通させて構成したことを特徴とする半導体チップの樹脂封止成形用金型。
The semiconductor chip mounted on the surface of the substrate is fitted into a cavity provided on one side of the molding die, and the back surface of the substrate is supported by the other mold surface of the molding die. A semiconductor that molds the semiconductor chip by closing the mold and filling the cavity with the molten resin in this state and molding the required resin sealing range on the surface of the substrate by resin sealing molding A mold for resin sealing molding of a chip,
The other mold surface for supporting the back surface of the substrate is provided with a recess having a required uniform depth set as a range wider than the product effective range of the substrate, and the recess and the vacuum source side A mold for resin-sealing molding of a semiconductor chip, characterized by being configured to communicate with each other.
JP2003386838A 2003-11-17 2003-11-17 Semiconductor chip resin sealing molding method and resin sealing molding die Expired - Lifetime JP4583020B2 (en)

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JP2009023239A (en) * 2007-07-20 2009-02-05 Nec Electronics Corp Resin mold die
JP2018187884A (en) * 2017-05-10 2018-11-29 Towa株式会社 Mold for resin molding, resin molding apparatus, method for adjusting mold for resin molding, and method for manufacturing resin molding
CN112420533A (en) * 2020-12-23 2021-02-26 星科金朋半导体(江阴)有限公司 Die structure of fingerprint product and chip packaging method thereof
CN115360148A (en) * 2022-09-15 2022-11-18 南京文采工业智能研究院有限公司 A New Package Structure of Power Devices

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JPH0851168A (en) * 1994-08-05 1996-02-20 Apic Yamada Kk Bga package and molding die used for manufacture bga package
JPH08300394A (en) * 1995-04-28 1996-11-19 Hitachi Ltd Molding die and method for molding resin-sealed body using the same
JP2001223229A (en) * 2000-02-10 2001-08-17 Nec Yamagata Ltd Resin molding method, metal mold for molding and wiring base material
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009023239A (en) * 2007-07-20 2009-02-05 Nec Electronics Corp Resin mold die
JP2018187884A (en) * 2017-05-10 2018-11-29 Towa株式会社 Mold for resin molding, resin molding apparatus, method for adjusting mold for resin molding, and method for manufacturing resin molding
CN112420533A (en) * 2020-12-23 2021-02-26 星科金朋半导体(江阴)有限公司 Die structure of fingerprint product and chip packaging method thereof
CN115360148A (en) * 2022-09-15 2022-11-18 南京文采工业智能研究院有限公司 A New Package Structure of Power Devices

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