JP2005109412A - レーザモジュール - Google Patents
レーザモジュール Download PDFInfo
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- JP2005109412A JP2005109412A JP2003344501A JP2003344501A JP2005109412A JP 2005109412 A JP2005109412 A JP 2005109412A JP 2003344501 A JP2003344501 A JP 2003344501A JP 2003344501 A JP2003344501 A JP 2003344501A JP 2005109412 A JP2005109412 A JP 2005109412A
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- 229910017008 AsF 6 Inorganic materials 0.000 description 1
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- ADAHGVUHKDNLEB-UHFFFAOYSA-N Bis(2,3-epoxycyclopentyl)ether Chemical compound C1CC2OC2C1OC1CCC2OC21 ADAHGVUHKDNLEB-UHFFFAOYSA-N 0.000 description 1
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- 229910000881 Cu alloy Inorganic materials 0.000 description 1
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- 239000002841 Lewis acid Substances 0.000 description 1
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- 229910006358 Si—OH Inorganic materials 0.000 description 1
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- DPKHZNPWBDQZCN-UHFFFAOYSA-N acridine orange free base Chemical compound C1=CC(N(C)C)=CC2=NC3=CC(N(C)C)=CC=C3C=C21 DPKHZNPWBDQZCN-UHFFFAOYSA-N 0.000 description 1
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- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
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- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical class CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- DJUWPHRCMMMSCV-UHFFFAOYSA-N bis(7-oxabicyclo[4.1.0]heptan-4-ylmethyl) hexanedioate Chemical compound C1CC2OC2CC1COC(=O)CCCCC(=O)OCC1CC2OC2CC1 DJUWPHRCMMMSCV-UHFFFAOYSA-N 0.000 description 1
- CZIGSBHMFBDSPG-UHFFFAOYSA-N bis[(4-methyl-7-oxabicyclo[4.1.0]heptan-5-yl)methyl] hexanedioate Chemical compound CC1CCC2OC2C1COC(=O)CCCCC(=O)OCC1C2OC2CCC1C CZIGSBHMFBDSPG-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
【解決手段】 発振波長が350〜450nmの範囲にあって、5500時間以上の寿命を持つ半導体レーザLD7を密閉容器40、41内に配置してなるレーザモジュールにおいて、密閉容器40、41内に配置する光学部品として、150℃におけるGC-MASS評価による有機揮発ガス発生量が10μg/g以下のものを用いる一方、光学部品(例えばコリメータレンズ17)を固定する有機接着剤として、150℃におけるGC-MASS評価による有機揮発ガス発生量が300μg/g以下のものを用いる。
【選択図】 図3
Description
発振波長が350〜450nmの範囲にあって、5500時間以上の寿命を持つ半導体レーザ素子を密閉容器内に配置してなるレーザモジュールにおいて、
前記密閉容器内に配置された、前記半導体レーザ素子を含む光学部品の全てが、150℃におけるGC-MASS(ガスクロマトグラフ質量分析法)評価による有機揮発ガス発生量が10μg/g(ヘキサデカンの揮発ガス量〔g〕に対する揮発有機物総量〔μg〕)以下のものであり、
前記光学部品を前記密閉容器内で固定する有機接着剤として、150℃におけるGC-MASS評価による有機揮発ガス発生量が300μg/g以下のものが用いられていることを特徴とするものである。
11〜17 コリメータレンズ
20 集光レンズ
30 マルチモード光ファイバ
30a コア
40 パッケージ
41 パッケージ蓋
44 コリメータレンズホルダ
45 集光レンズホルダ
LD1〜LD7 GaN系半導体レーザ
Claims (8)
- 発振波長が350〜450nmの範囲にあって、5500時間以上の寿命を持つ半導体レーザ素子を密閉容器内に配置してなるレーザモジュールにおいて、
前記密閉容器内に配置された、前記半導体レーザ素子を含む光学部品の全てが、150℃におけるGC-MASS(ガスクロマトグラフ質量分析法)評価による有機揮発ガス発生量が10μg/g(ヘキサデカンの揮発ガス量〔g〕に対する揮発有機物総量〔μg〕:以下同様)以下のものであり、
前記光学部品を前記密閉容器内で固定する有機接着剤として、150℃におけるGC-MASS評価による有機揮発ガス発生量が300μg/g以下のものが用いられていることを特徴とするレーザモジュール。 - 前記光学部品として、光ファイバと、前記半導体レーザ素子から射出されたレーザ光を該光ファイバに入力するための入射光学系とを有することを特徴とする請求項1記載のレーザモジュール。
- 前記有機接着剤が、エポキシ基を有する脂環式エポキシ化合物、オキセタニル基を有する化合物、および、触媒量のオニウム塩光反応開始剤を含有する接着性組成物からなることを特徴とする請求項1または2記載のレーザモジュール。
- 前記接着性組成物が、前記光学部品とそれを固定する固定部材との間に、接着厚さが0.05μm以上5μm以下となるように挿入された後、活性エネルギー線により硬化させることにより、前記光学部品が前記固定部材に固定されていることを特徴とする請求項3記載のレーザモジュール。
- 前記接着性組成物がシランカップリング剤を含有することを特徴とする請求項3または4記載のレーザモジュール。
- 前記接着性組成物が0.1μm以上1.0μm以下の平均直径を有する球状シリカ粒子を含有することを特徴とする請求項3から5いずれか1項記載のレーザモジュール。
- 前記固定部材が金属製部材からなり、前記光学部品が無機透明部材からなることを特徴とする請求項3から6いずれか1項記載のレーザモジュール。
Priority Applications (5)
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JP2003344501A JP2005109412A (ja) | 2003-10-02 | 2003-10-02 | レーザモジュール |
CNB2004100959753A CN100523897C (zh) | 2003-10-02 | 2004-09-28 | 激光模块 |
US10/954,244 US7301975B2 (en) | 2003-10-02 | 2004-10-01 | Laser module |
TW093129758A TWI268029B (en) | 2003-10-02 | 2004-10-01 | Laser module |
KR1020040078404A KR101093025B1 (ko) | 2003-10-02 | 2004-10-01 | 레이저 모듈 |
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JP2003344501A JP2005109412A (ja) | 2003-10-02 | 2003-10-02 | レーザモジュール |
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US (1) | US7301975B2 (ja) |
JP (1) | JP2005109412A (ja) |
KR (1) | KR101093025B1 (ja) |
CN (1) | CN100523897C (ja) |
TW (1) | TWI268029B (ja) |
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JP2007173434A (ja) * | 2005-12-21 | 2007-07-05 | Sharp Corp | 半導体レーザ装置及び組立装置 |
JP2010232370A (ja) * | 2009-03-26 | 2010-10-14 | Furukawa Electric Co Ltd:The | レンズ、半導体レーザモジュール、および光学デバイスの製造方法 |
JP2012094922A (ja) * | 2012-02-15 | 2012-05-17 | Sharp Corp | 組立装置 |
JP2017098301A (ja) * | 2015-11-18 | 2017-06-01 | 住友電気工業株式会社 | 光モジュール及び光モジュールの製造方法 |
WO2018003157A1 (ja) * | 2016-06-28 | 2018-01-04 | シャープ株式会社 | 光源モジュール |
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JP4737942B2 (ja) * | 2004-03-24 | 2011-08-03 | Tdk株式会社 | 太陽電池の製造方法 |
US8018982B2 (en) * | 2008-04-17 | 2011-09-13 | Pin Long | Sliced fiber bragg grating used as external cavity for semiconductor laser and solid state laser |
CN102192962A (zh) * | 2010-03-18 | 2011-09-21 | 复旦大学 | 激光辅助热解析质谱进样的装置与方法 |
JP5598845B2 (ja) * | 2010-05-11 | 2014-10-01 | 古河電気工業株式会社 | レーザモジュール |
TWI702241B (zh) * | 2016-12-09 | 2020-08-21 | 南韓商Lg化學股份有限公司 | 封裝組成物 |
JP6445100B1 (ja) * | 2017-07-06 | 2018-12-26 | 株式会社フジクラ | 光モジュール及びその製造方法 |
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Also Published As
Publication number | Publication date |
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TWI268029B (en) | 2006-12-01 |
KR20050033029A (ko) | 2005-04-08 |
TW200518412A (en) | 2005-06-01 |
CN100523897C (zh) | 2009-08-05 |
CN1604413A (zh) | 2005-04-06 |
KR101093025B1 (ko) | 2011-12-13 |
US7301975B2 (en) | 2007-11-27 |
US20050058167A1 (en) | 2005-03-17 |
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