JP2004327215A - Electro-optical device, substrate for electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Abstract

An object of the present invention is to prevent deterioration and destruction of a light emitting element when bonding substrates.
An EL substrate includes a transparent base material, an individual electrode and an organic EL layer, and a common electrode opposed to the individual electrode with the organic EL layer interposed therebetween. , An electrically insulating sealing layer 360 covering the organic EL element, and connection terminals 340 provided to face the individual electrodes 303 with the sealing layer 360 interposed therebetween. On the other hand, the TFT substrate 200 includes a pixel drive circuit 250 for driving each of the organic EL elements, and an extraction terminal 240 provided corresponding to the connection terminal 340 for connecting the pixel drive circuit 250 and the organic EL element. . Then, the EL substrate 300 and the TFT substrate 200 are bonded using the anisotropic conductor 400 such that the connection terminals 340 and the lead terminals 240 are electrically connected to each other in a one-to-one relationship.
[Selection diagram] FIG.

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electro-optical device using a light-emitting element such as an organic EL (Electronic Luminescence) element, a substrate for the electro-optical device, a method of manufacturing the electro-optical device, and an electronic apparatus.
[0002]
[Prior art]
In recent years, an organic EL element has attracted attention as a next-generation light emitting device that replaces a conventional liquid crystal element. The organic EL element has a structure in which a light-emitting layer is sandwiched between two electrodes, and is a self-light-emitting element that emits light by itself according to a current flowing between the two electrodes. As a result, it has excellent characteristics as a display element, such as low power consumption.
In order to drive such an organic EL element, similarly to a liquid crystal element, an active matrix method using an active element such as a thin film transistor (hereinafter abbreviated as “TFT”) and a passive method using no active element are used. The active matrix method can be roughly classified into a matrix method, but the active matrix method according to the latter is considered to be excellent because the driving voltage is low.
[0003]
By the way, when the organic EL element is driven by the active matrix system, a structure in which the active element and the organic EL element are formed on a single substrate is not preferable from the viewpoint of manufacturing such as yield and throughput. For this reason, in recent years, a technique has been proposed in which an active element and an organic EL element are formed on separate substrates and then the two substrates are bonded to each other (for example, see Patent Documents 1 and 2).
[0004]
[Patent Document 1]
JP-A-2002-82633 (see FIG. 3)
[Patent Document 2]
JP 2001-117509 A (see FIGS. 2 and 3)
[0005]
[Problems to be solved by the invention]
By the way, since an organic EL element is literally made of an organic material, it has a defect that it is easily deteriorated by an organic solvent, moisture, and the like, and is easily broken when a stress is applied to a light emitting layer. The technology described in the above publication is not sufficient from the viewpoint of preventing deterioration and destruction of the organic EL element because the stress when the substrates are bonded to each other is directly applied to the electrodes constituting the organic EL element. Did not.
The present invention has been made in view of such circumstances, and an object of the present invention is to form a substrate on which a light-emitting element such as an organic EL element is formed and a concentration element for driving the light-emitting element. It is an object of the present invention to provide an electro-optical device, a substrate for an electro-optical device, a method for manufacturing an electro-optical device, and an electronic apparatus, in which deterioration and destruction of a light-emitting element are suppressed when bonding the substrate with the substrate.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, an electro-optical device according to the present invention has a first substrate and a second substrate, wherein the first substrate includes a transparent base material, an individual electrode, and a light emitting layer. A plurality of light-emitting elements having in common a common electrode facing the individual electrode with the light-emitting layer interposed therebetween; an electrically insulating sealing layer covering the light-emitting element; A first connection terminal provided to face the electrode; and a conductive portion provided through the sealing layer and electrically connecting the individual electrode and the first connection terminal. A driving circuit for driving each of the plurality of light emitting elements; and a second substrate for connecting the driving circuit to the plurality of light emitting elements, the second substrate being provided corresponding to the first connection terminal. And the first connection terminal provided on the first substrate. Said second connection terminals provided terminal and the second substrate are arranged so as to electrically connect. According to this electro-optical device, since the light emitting element of the first substrate is covered with the sealing layer, the deterioration of the light emitting element is prevented. Further, since no stress is directly applied to the light emitting element when the light emitting element is bonded to the second substrate, destruction of the light emitting element is prevented. Further, since only the first connection terminal is exposed on the surface of the sealing layer in the first substrate, the first connection terminal can be widened as long as the first connection terminal does not come into contact with an adjacent connection terminal. As a result, the contact resistance between the connection terminals is reduced. It becomes possible. In addition, the light emitting element here includes, in addition to the above-described organic EL element, an LED, a cell of a plasma display that emits light by discharging between electrodes, and the like.
[0007]
In this electro-optical device, it is preferable that the individual electrode is located closer to the substrate than the common electrode. Since the light emitted by the light emitting element passes only through the individual electrodes and the first base material, a bright display with an increased aperture ratio can be performed. In this configuration, it is preferable that the individual electrodes have transparency and the common electrode has reflectivity. According to this configuration, since the resistance of the common electrode can be reduced, display unevenness can be prevented. Further, the light emitted from the light emitting element is reflected by the common electrode, so that the light use efficiency is improved. The first substrate may include a partition partitioning the light emitting layer, and the connection portion may be provided to penetrate the sealing layer and the partition.
[0008]
On the other hand, in this electro-optical device, it is also preferable that the common electrode is located closer to the substrate than the individual electrodes. In this configuration, when the conductive portion is provided, the depth penetrating the sealing layer is reduced, so that defects such as chipping due to the penetration can be reduced. In this configuration, the common electrode may have transparency, and the individual electrodes may have reflectivity. In such a configuration, the first substrate may include a partition partitioning the light emitting layer, and at least a portion of the first connection terminal may be disposed above the partition. Since the partition wall swells, the swelling makes the first and second connection terminals more reliably contact. Note that, by flattening the swell, the contact area between the electrodes can be increased, and the contact resistance can be reduced.
[0009]
In this electro-optical device, it is preferable that the light emitting layer includes an organic electroluminescence layer, and the light emitting element is an organic EL element in which one of an individual electrode and a common electrode is a cathode and the other is an anode.
Further, in this electro-optical device, the second substrate has a plurality of scanning lines and a plurality of data lines that intersect each other, and the driving circuit is configured to intersect the plurality of scanning lines with the plurality of data lines. A switching transistor that is provided corresponding to the section and that is turned on when a scanning line corresponding to the intersection is selected, and that responds to an electrical signal on a data line corresponding to the intersection when the switching transistor is turned on. And a drive transistor having one terminal electrically connected to the second connection terminal and having an operation state determined in accordance with the charge stored in the capacitor. Is preferred.
According to this configuration, even when the switching transistor is turned off, the conduction state of the driving transistor is determined by the charge stored in the capacitor, so that current can be continuously supplied to the light emitting element.
In the electro-optical device, the driving circuit may include a thin film transistor. In addition, it is preferable that the electronic apparatus includes such an electro-optical device.
[0010]
In order to achieve the above object, a substrate for an electro-optical device according to the present invention includes a transparent base material, an individual electrode and a light emitting layer, and a common substrate facing the individual electrode with the light emitting layer interposed therebetween. A plurality of light-emitting elements having a common electrode, an electrically insulating sealing layer covering the light-emitting element, a first connection terminal provided to face the individual electrode with the sealing layer interposed therebetween, An electro-optical device substrate, which is provided to penetrate a sealing layer and is used by being connected to a substrate including a conductive portion that electrically connects the individual electrode and the first connection terminal. A drive circuit for driving each of the plurality of light-emitting elements; and a second connection terminal provided to be connectable to the first connection terminal, for electrically connecting the drive circuit to the plurality of light-emitting elements. Is provided. This electro-optical device substrate is used as a first substrate of the electro-optical device.
[0011]
Further, in order to achieve the above object, a substrate for an electro-optical device according to the present invention includes a substrate having transparency, an individual electrode and a light emitting layer, and faces the individual electrode with the light emitting layer interposed therebetween. A plurality of light-emitting elements having a common electrode in common, an electrically insulating sealing layer covering the light-emitting element, a first connection terminal provided to face the individual electrode with the sealing layer interposed therebetween, A conductive portion provided through the sealing layer to electrically connect the individual electrode and the first connection terminal. This substrate for an electro-optical device is used as a second substrate of the electro-optical device.
[0012]
In order to achieve the above object, a method of manufacturing an electro-optical device according to the present invention includes a step of forming a plurality of light emitting elements by laminating a plurality of individual electrodes, a light emitting layer, and a common electrode on a transparent base material. Forming a sealing layer covering the plurality of light emitting elements, and forming a plurality of first connection terminals penetrating at least the sealing layer and electrically connected to the plurality of individual electrodes, respectively. On the other hand, a step of forming a drive circuit for driving each of the plurality of light-emitting elements on a base material different from the base material having transparency, and a second step for connecting the drive circuit and the plurality of light-emitting elements. Forming a connection terminal corresponding to the first connection terminal, and electrically connecting the first connection terminal and the second connection terminal. According to this manufacturing method, since the light emitting element of the first substrate is covered with the sealing layer, deterioration of the light emitting element is prevented. Further, since no stress is directly applied to the light emitting element when the light emitting element is bonded to the second substrate, destruction of the light emitting element is prevented. Further, since only the first connection terminal is exposed on the surface of the sealing layer in the first substrate, the first connection terminal can be widened as long as the first connection terminal does not come into contact with an adjacent connection terminal. As a result, the contact resistance between the connection terminals is reduced. It becomes possible.
[0013]
In this manufacturing method, the step of electrically connecting the first connection terminal and the second connection terminal includes the step of electrically connecting the anisotropic conductive material to the first connection terminal and the second connection terminal. It is preferable to include a step of applying the interposition. This makes it possible to electrically easily connect the first and second connection terminals.
[0014]
Further, in the above manufacturing method, the step of forming the plurality of light emitting elements includes, after the step of forming the plurality of individual electrodes, a step of forming a partition for partitioning the plurality of light emitting elements; Forming the first connection terminal, the method including: forming the light-emitting layer in a specified region; and forming the common electrode avoiding a region where the sealing layer is expected to penetrate. The method may include a step of opening the predetermined region of the sealing layer and the partition to expose a part of the individual electrode. Since the sealing layer and the partition are opened at once, only one opening is required to connect the first connection terminal to the individual electrode.
[0015]
In the above-mentioned manufacturing method, the step of forming the plurality of light emitting elements may include, after the step of forming the plurality of individual electrodes, reaching a partition wall for partitioning the plurality of light emitting elements to the plurality of individual electrodes. Forming a plurality of openings, providing a conductive material to the plurality of openings, forming the light-emitting layer in a region partitioned by the partition wall, Forming the common electrode so as not to be in contact with, and forming the first connection terminal includes forming a hole in the sealing layer to expose a part of the conductive material. It may be included. In the first substrate, the number of openings for conducting from the first connection terminal to the individual electrode is twice for each of the partition wall and the sealing layer, but the depth required for one opening is small. Therefore, defects such as chipping due to the opening can be reduced.
[0016]
Further, in the above manufacturing method, the step of forming the plurality of light-emitting elements includes, after laminating the common electrode, a step of forming a partition for partitioning the plurality of light-emitting elements, and forming an area partitioned by the partition. Forming the light emitting layer, and forming the plurality of individual electrodes so that at least a part thereof is located above the partition, and forming the first connection terminal, The method may include a step of opening the sealing layer to expose a part of the individual electrode formed to be located above the partition. In the first substrate, an opening for conducting from the first connection terminal to the individual electrode can be formed only once in the sealing layer.
[0017]
Here, when the holes are formed once or twice, it is preferable that the step of forming the light emitting layer includes a step of applying a liquefied light emitting material to a region partitioned by the partition. When the liquefied light emitting material is discharged, the liquid material stays in the pixel due to the partition, and does not straddle an adjacent pixel. Further, since the light-emitting material is selectively formed, the amount of wasted light-emitting material can be reduced as compared with the formation method using the photolithography technique.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0019]
<First embodiment>
First, for convenience of description, an entire display system including the electro-optical device according to the embodiment will be described. FIG. 1 is a block diagram showing the configuration of the display system 10.
As shown in this figure, in the electro-optical device 100 as a display panel, a plurality of m scanning lines 202 and a plurality of n data lines 204 are orthogonal to each other (electrically insulated). A pixel circuit 110 having an organic EL element is provided at each of the intersections while being extended. That is, in the electro-optical device 100, pixels are arranged in a matrix with m rows and n columns.
The image memory 130 has a storage area corresponding to each pixel, and in each storage area, digital data Dmem that defines the gradation (luminance) of the corresponding pixel is stored. Note that the digital data Dmem is supplied from a CPU (not shown in FIG. 1) or the like, and is written in a designated storage area.
[0020]
The scanning line driving circuit 140 supplies a scanning signal to the m scanning lines 202. More specifically, the scanning line driving circuit 140 sequentially selects the scanning lines 202 one by one every one horizontal scanning period, and supplies an active level (H level) scanning signal to the selected scanning line 202 and the other scanning lines. Are supplied with a scanning signal of an inactive level (L level) to the scanning lines 202 from the first row to the last m-th row. Here, for convenience of description, a scanning signal supplied to the scanning line 202 in the i-th (i is an integer satisfying 1 ≦ i ≦ m) row is denoted as Yi.
The control circuit 150 controls the selection of the scanning line 202 by the scanning line driving circuit 140, and synchronizes with the selection operation of the scanning line 202, and synchronizes the digital data Dpix-1 corresponding to the data lines 204 from the first column to the nth column. To Dpix-n are read from the image memory 130 and supplied to the data line driving circuit 160.
[0021]
The data line drive circuit 160 has a D / A converter for each data line 204 (not shown). Here, the D / A converter at the j-th column (j is an integer satisfying 1 ≦ j ≦ n) has a digital signal corresponding to the intersection of the selected scanning line 202 and the data line 204 at the j-th column. Data Dpix-j is supplied. Then, the D / A converter converts the supplied digital data Dpix-j into an analog voltage, and applies it to the corresponding j-th data line 204 as a data signal Xj.
Therefore, for example, the voltage of the data signal X3 applied to the data line 204 in the third column is the digital data of the pixel corresponding to the intersection between the scanning line 202 selected at that time and the data line 204 in the third column. Dpix-3 is converted into an analog voltage.
The power supply circuit 170 supplies appropriate power to each unit.
[0022]
Actually, each of the elements denoted by reference numerals 100, 130, 140, 150, 160, and 170 has various forms, such as a case where each element is configured by an independent part and a case where some or all are integrally configured. Take the form. For example, the scanning line driving circuit 140 and the data line driving circuit 160 may be integrated together with a pixel driving circuit on a TFT substrate to be described later. Such integration is advantageous in reducing the size and cost of the entire device as compared with a type in which peripheral circuits are mounted on a separate substrate.
[0023]
<Pixel circuit>
Next, the pixel circuit 110 in the electro-optical device 100 will be described. FIG. 2 is a circuit diagram showing an example of the configuration. Note that all the pixel circuits 110 have the same configuration. However, here, the pixel circuit 110 provided at the intersection of the i-th scanning line 202 and the j-th data line 204 will be described as a representative. I will.
As shown in this figure, the pixel circuit 110 provided at the intersection of the scanning line 202 and the data line 204 has a configuration including a pixel driving circuit 250 and an organic EL element 310 as a light emitting element. I have.
Although details will be described later, the electro-optical device 100 is composed of a TFT substrate having a pixel driving circuit 250 and an EL substrate having an organic EL element 310, and both substrates are provided for each pixel circuit 110. It is configured to be electrically connected via the N point.
[0024]
The pixel driving circuit 250 has two TFTs 212 and 214 and a capacitor 220. Among them, a TFT 214 as a switching transistor is an n-channel type, a gate thereof is connected to the scanning line 202, a source thereof is connected to the data line 204, and a drain thereof is a gate of the TFT 212 and one end of the capacitor 220. It is connected to the. The TFT 212 as a driving transistor is a p-channel type, and its source is connected to the power supply line 209 to which the higher voltage Vdd of the power supply is applied, and its drain is connected to the organic EL element 310 via the N point. Connected to the anode. The other end of the capacitance element 220 is connected to the power supply line 209.
As described later, the organic EL element 310 has an organic EL layer sandwiched between an anode and a cathode, and emits light at a luminance corresponding to a forward current. Here, in the first embodiment, the cathode of the organic EL element 310 is an electrode that is electrically common to all pixel circuits, and is grounded to a low (reference) voltage Gnd of the power supply. In addition, as shown in FIG. 15 described later, in the organic EL element 310, the anode may be a common electrode in some cases.
[0025]
In the pixel circuit 110, when the i-th scanning line 202 is selected and the scanning signal Yi becomes H level, the n-channel TFT 214 is turned on between the source and the drain. , The voltage of the data signal Xj is applied. Therefore, the conduction state between the source and the drain of the TFT 212 is determined according to the voltage of the data signal Xj. As a result, a current according to the voltage flows through the organic EL element 310, and the organic EL element 310 emits light. On the other hand, when the TFT 214 is on, electric charge corresponding to the gate voltage of the TFT 212 is accumulated in the capacitor 220.
[0026]
Next, when the selection of the i-th scanning line 202 is completed and the scanning line 202 is deselected and the scanning signal Yi goes to the L level, the TFT 214 is turned off, but the gate voltage of the TFT 212 is held by the capacitor 220. Therefore, a current substantially equal to that when the TFT 214 is turned on continues to flow through the organic EL element 310. Therefore, even when the i-th scanning line 202 is not selected, the organic EL element 310 continues to emit light at a luminance corresponding to the current at the time of selection.
Here, only the pixel circuit 110 in the i-th row and the j-th column is described. However, since the i-th scanning line 202 is shared by the m pixel circuits 110, the m pixel circuits 110 are shared. A similar operation is performed in 110 as well.
Further, the scanning signals Y1, Y2, Y3,..., Ym are exclusively at the H level in order. As a result, a similar operation is performed in all the pixel circuits 110, and an image of one frame is displayed. This display operation is repeated every one vertical scanning period.
In the pixel circuit 110 shown in FIG. 2, it has been described that when the scanning line 202 is selected, a voltage corresponding to the digital value of the digital data is applied to the data line 204. May be supplied to the data line 204. Even in such a configuration, since the gate voltage of the TFT 212 is held by the capacitor 220, an effect equivalent to the configuration in which a voltage corresponding to the luminance is applied can be obtained.
[0027]
<Structure of electro-optical device>
Next, the structure of the electro-optical device 100 will be described. FIG. 3A and FIG. 3B are cross-sectional views illustrating a main configuration of the electro-optical device 100. As shown in these drawings, the electro-optical device 100 has a structure in which a TFT substrate 200 and an EL substrate 300 are attached to each other so that their terminal formation surfaces face each other and the terminals are electrically connected to each other. Has become. Here, the terminals are electrically connected by an anisotropic conductor 400. More specifically, as shown in FIG. 3A, first, the TFT substrate 200 and the EL substrate 300 are opposed to each other with the terminal forming surfaces facing each other, and a micro-coating whose surface is covered with a metal coating therebetween. Second, when the anisotropic conductor 400 in which the capsule 410 is dispersed in a sheet-like adhesive material made of epoxy or the like is sandwiched, and the TFT substrate 200 and the EL substrate 300 are thermocompression-bonded, FIG. As shown in (2), the terminals are electrically connected via the microcapsule 410. Therefore, the connection point between these terminals is the point N in FIG.
[0028]
On the TFT substrate 200, for example, a scanning line 202, a data line 204, a power supply line 209, and a pixel driving circuit 250 are formed on a base material 201 such as plastic or glass, and these parts are covered with an insulating layer 260. Structure. In the insulating layer 260, a contact hole 230 is provided for each pixel driving circuit 250, and is opened to the drain of the TFT 212. Then, the lead terminal (second connection terminal) 240 is formed on the surface of the insulating layer 260 and connected to the drain of the TFT 212, that is, the output terminal of the pixel drive circuit 250 via the contact hole 230. I have.
[0029]
Next, a planar configuration of the TFT substrate 200 will be described. FIG. 4 is a plan view showing a state in which the lead terminals 240 and the insulating layer 260 have been removed from the TFT substrate 200 for explanation.
First, in FIG. 4, the lowermost layer is a semiconductor layer of the TFTs 212 and 214, for example, a pattern obtained by patterning a crystalline polysilicon layer. Next, the second layer is, for example, a gate electrode layer, and is roughly divided into a gate electrode of the TFT 212 and the scanning line 202. Here, the former gate electrode of the TFT 212 constitutes a part of the capacitor 220, and the latter scanning line 202 also includes a portion branched to the TFT 214 side. A portion where the lowermost semiconductor layer and the second gate electrode layer intersect becomes a channel region of the TFTs 212 and 214.
Subsequently, the third layer is, for example, an aluminum layer, and is roughly divided into a wiring for connecting to a source and a drain of the TFT, a data line 204, and a power supply line 209. Note that the connection between the wirings made of different layers and the connection between the source / drain of the TFT and the wiring are performed through contact holes indicated by “x” in FIG.
The capacitor 220 is formed by stacking an extension of the gate electrode of the TFT 212, an insulating film (not shown) covering the extension, and a branch of the power supply line 209.
In FIG. 4, a TFT having a top gate structure has been described as an example, but a bottom gate may be used.
[0030]
In FIG. 4, the drawing of the lead terminals 240 located on the uppermost layer is omitted for convenience of explanation, so that the shape and arrangement of the lead terminals 240 are shown in FIG. As shown in FIG. 5, the lead terminal 240 is formed in a rectangular shape on the surface of the insulating layer 260. Since the lead terminal 240 is connected to the drain of the TFT 214 in the pixel driving circuit 250 via the contact hole 230, it is provided for each pixel circuit 110 (pixel driving circuit 250).
[0031]
Returning to FIG. 3A again, in the EL substrate 300, the base material 301 is, for example, plastic or glass and has transparency. On the surface of the substrate 301, an individual electrode 303 serving as an anode of the organic EL element 310 (see FIG. 2) is formed in a rectangular shape for each pixel. The individual electrode 303 is a transparent conductor such as ITO (Indium Tin Oxide).
The bank 305 is a partition formed in a vertical and horizontal lattice so as to span the gap between the individual electrodes 303. The bank 305 is used to reduce color mixing and light leakage between pixels, and to prevent the discharged ink composition from spreading to adjacent pixels when the organic EL layer 313 is formed by an inkjet method. Provided for the reason.
[0032]
The organic EL layer 313 includes a hole transport layer, a light emitting layer, and an electron injection layer, but the hole transport layer and the electron injection layer are not necessarily required. For this reason, in FIG. 3A, a laminate of the hole transport layer and the light emitting layer is illustrated as the organic EL layer 313, and the electron injection layer is not illustrated.
Further, the common electrode 323 functions as a cathode of the organic EL element 310 and is a reflective conductor common to all pixels.
Here, the common electrode 323 is formed so as to cover the bank 305 and the organic EL layer 313. However, the common electrode 323 is not in a so-called solid state but in a top portion of the bank 305 where the contact hole 330 is formed. The opening 325 is opened so as not to contact the connection terminal 340 via the contact hole 330.
The sealing layer 360 is formed of an insulating material so as to cover the common electrode 323 and the bank 305 in order to protect the organic EL layer 313 and the like from the outside. The contact hole 330 is provided for each pixel, and reaches the individual electrode 303 via a conductive portion penetrating the sealing layer 360 and the bank 305. Then, the connection terminal (first connection terminal) 340 is connected to the corresponding individual electrode 303 via the contact hole 330 (the conductive portion therein).
[0033]
Here, the arrangement of the connection terminals 340 on the EL substrate 300 will be described with reference to FIG. Note that FIG. 6 is a plan view showing the shape and arrangement of the connection terminals 340, and therefore, it should be noted that light emitted by the organic EL element 310 goes to the back side of the drawing.
As shown in FIG. 6, the connection terminal 340 is formed on the surface of the sealing layer 360 in substantially the same shape as the lead terminal 240 on the TFT substrate 200. The connection terminal 340 is connected to the individual electrode 303 (see FIG. 3A or 3B) via the contact hole 330. Note that the common electrode 323 exists between the connection terminal 340 and the individual electrode 303, but near the contact hole 330 provided in the bank 305 (and the sealing layer 360), the common electrode 323 is opened by the opening 325. Since the opening is made to avoid the contact hole 330, the common electrode 323 and the connection terminal 340 (individual electrode 303) are electrically disconnected.
[0034]
<Electro-optical device manufacturing process>
Next, the manufacturing process of the electro-optical device 100 will be described separately for each substrate. FIG. 7 is a diagram showing this manufacturing process.
To briefly explain the TFT substrate 200, first, elements and wiring such as the pixel drive circuit 250 are formed on the base 201 (see step (a)). Specifically, for example, an amorphous silicon layer is deposited on the base material 201, and the silicon layer is crystallized and heat-treated by laser annealing or the like to form a first semiconductor layer. Next, a scanning line 202 and the like are formed by forming and patterning a gate electrode as a second layer. Further, after masking the p-channel region with a resist, doping is performed for the n-channel region, and the resist is peeled off, so that an n-channel TFT 214 is formed. Subsequently, the p-channel TFT 212 is formed by masking the n-channel region with a resist, doping for the p-channel region, and removing the resist. Next, an interlayer insulating film is formed, and the source / drain regions of the TFTs 212 and 214 are opened. Subsequently, a metal film such as aluminum as a third layer is formed and patterned to form wirings such as the data line 204 and the power supply line 209.
In addition, since a well-known polysilicon process or the like can be used for the step of forming the element / wiring, further description will be omitted.
[0035]
Subsequently, for example, SiO 2 is covered so as to cover the region where ₂ And Si ₃ N ₄ Then, an insulating layer 260 such as SiON is formed (see step (b)). Note that unevenness is generated on the surface of the insulating layer 260 reflecting wirings, TFTs, and the like. Therefore, the surface of the insulating layer 260 is preferably planarized by CMP (chemical mechanical polishing) or the like. Further, the insulating layer 260 may be formed of an acrylic resin or a polyimide resin, and may have a planarized surface.
Next, a contact hole 230 is formed, and the insulating layer 260 is opened (see step (c)). Then, a lead terminal 240 is formed by forming and patterning a metal film such as aluminum (see step (d)). Thus, the TFT substrate 200 is completed.
[0036]
On the other hand, the EL substrate 300 will be described with reference to FIGS. 8 and 9 in addition to FIG. Here, FIGS. 8 and 9 are partial cross-sectional views for explaining a manufacturing process for an EL substrate, and steps (1) to (7) respectively correspond to FIG.
First, a transparent conductor such as ITO is formed on a transparent base material 301 such as glass, and then patterned by using a photolithography technique to form a rectangular individual electrode 303 (see FIG. 7 and FIG. 7). Step (1) in FIG. 8). The individual electrodes 303 are preferably subjected to a hydrophilic treatment so that the ink composition ejected by an ink-jet method described later spreads in a uniform thickness.
Next, the bank 305 is formed (see step (2) in FIGS. 7 and 8). The bank 305 is made of, for example, SiO ₂ , SiN and the like.
[0037]
Subsequently, a hole transport layer and a light-emitting layer that constitute the organic EL layer 313 are formed by an inkjet method (see step (3) in FIGS. 7 and 8). Here, the inkjet method is a method in which a layer material is dissolved or dispersed in a solvent, the ink composition is discharged from an inkjet head, and a pattern is formed through drying and heat treatment.
In addition, as a material of the hole transport layer, a PSS (polystyrene sulfonic acid) -based mixture is used, and a mixture obtained by dispersing this mixture in a polar solvent is used as an ink composition. An organic material such as PPV (polyparaphenylene vinylene) is used as a material of the light emitting layer.
[0038]
Next, a reflective metal such as aluminum is evaporated to form the common electrode 323 in a state where a region to be the opening 325 is masked (see step (4) in FIGS. 7 and 8). Here, the reason why the mask vapor deposition is performed at the time of forming the common electrode 323 is that it is not desirable for the organic EL layer 313 to perform an etching process on the already formed organic EL layer 313.
When an electron injection layer is formed in the organic EL layer 313, a metal thin film of calcium or lithium having the same shape as the common electrode 323 and having a high electron injection property (low work function) is formed under the common electrode 323. To form
[0039]
Subsequently, for example, SiO 2 is coated to cover the organic EL layer 313. ₂ , SiON or the like is formed, and thereafter, the surface of the sealing layer 360 is planarized by CMP or the like in order to eliminate undulations reflecting the banks 305 and the like (steps in FIGS. 7 and 9). (5)).
Further, a contact hole 330 is formed, and in this embodiment, the sealing layer 360 and the bank 305 are opened (see step (6) in FIGS. 7 and 9). Thereafter, a metal film such as aluminum is formed and patterned to form a conductive portion in the contact hole 330 and the connection terminal 340 (see step (7) in FIGS. 7 and 9). Thus, the EL substrate 300 is completed.
[0040]
Then, as described above, the completed TFT substrate 200 and the EL substrate 300 face each other with the terminal forming surfaces facing each other, and the anisotropic conductor 400 is sandwiched between the two substrates, so that the lead terminal 240 and the connection terminal 340 are connected to each other. The thermocompression bonding is performed in a state where they are aligned so as to face each other. In this thermocompression bonding state, if the adhesive of the anisotropic conductor 400 is melted and one or more microcapsules 410 remain in each set of the lead terminals 240 and the connection terminals 340, the metal of the microcapsules 410 is The lead terminal 240 and the connection terminal 340 are electrically connected to each other via the film. Then, when the thermocompression bonding is stopped, the adhesive is hardened, and the TFT substrate 200 and the EL substrate 300 are bonded to each other while the electrical connection between the lead terminals 240 and the connection terminals 340 is maintained (FIG. 3). (B)).
[0041]
In the electro-optical device 100, when a current flows from the individual electrode 303 serving as the anode to the common electrode 323 serving as the cathode, the light emitting layer of the organic EL layer 313 emits light by the combination of holes serving as carriers and electrons. Of this light, the downward light in FIG. 3B passes through the transparent individual electrode 303 and the base material 301 as it is and is visually recognized by an observer. On the other hand, of the light emitted from the organic EL layer 313, the upward light on the paper is reflected by the reflective common electrode 323, passes through the organic EL layer 313, the individual electrode 303, and the base material 301, and similarly, Visible to the observer. Therefore, the observer sees more light. Furthermore, in this embodiment, since there is no intervening material between the individual electrode 303 and the base material 301, the aperture ratio can be easily increased. As described above, the light utilization efficiency and the high aperture ratio combine to enable the electro-optical device 100 to perform bright display.
[0042]
Further, a low-resistance conductor such as aluminum can be used for the common electrode 323 instead of a relatively high-resistance conductor such as ITO, so that the current flowing through the light emitting layer differs depending on the pixel position. The resulting display unevenness can be suppressed.
Further, in the EL substrate 300, the organic EL layer 313 is completely covered with the sealing layer 360, so that subsequent steps, for example, a step of bonding to the TFT substrate 200 do not need to be performed in an inert environment. Deterioration due to moisture and the like is also prevented.
In addition, since the organic EL layer 313 is covered with the sealing layer 360 and the connection terminal 340 is connected to the individual electrode 303 through the sealing layer 360 and the bank 305, the organic EL layer of the EL substrate 300 is formed. No stress is directly applied to 313 at the time of bonding with the TFT substrate 200. Therefore, at the time of bonding the substrates together, the problem that the organic EL layer 313 (organic EL element 310) is broken is also reduced.
[0043]
<Second embodiment>
Next, a second embodiment of the present invention will be described. The second embodiment is different from the first embodiment in that the contact hole 330 of the EL substrate 300 is opened twice. For this reason, since the structure of the electro-optical device 100 is the same, the manufacturing process of the EL substrate will be described focusing on the difference.
FIG. 10 is a diagram showing a manufacturing process of the electro-optical device according to the second embodiment. FIGS. 11 and 12 are partial cross-sectional views for explaining a manufacturing process for an EL substrate. Steps (2) to (8) in FIG. 11 and FIG. 12 correspond to FIG. 10 respectively, and step (1) is the same as that in the first embodiment, and thus is omitted. That is, as in the first embodiment, a transparent conductor such as ITO is patterned into a rectangular shape on a transparent base material 301 such as glass to form an individual electrode 303.
[0044]
Next, for example, a photosensitive acrylic resin or the like is applied to the substrate 301 on which the individual electrodes 303 are formed, and then the bank 305 is formed by patterning using a photolithography technique. At the time of patterning the bank 305, the opening 307 reaching the individual electrode 303 is also formed at the same time (see step (2) in FIGS. 10 and 11).
Here, the bank 305 may be made of any material that has durability with respect to the solvent of the ink composition of the organic EL layer 313. However, the material can be water-repellent by fluorocarbon gas plasma processing. In consideration of the above, an organic material such as the above-described photosensitive acrylic resin or photosensitive polyimide is preferable. In addition, if the bank 305 is required to have characteristics of reducing color mixing between pixels and light leakage, it is preferable to color the bank 305 with black. The bank 305 is made of SiO 2 from the viewpoint of improving the adhesion. ₂ As in the first embodiment, a laminated structure having an inorganic material as a lower layer may be used.
[0045]
Subsequently, a conductor having a relatively low resistance such as aluminum is formed as a conductive layer by sputtering or the like, and then patterned and filled into the opening 307 as a conductive material 309 (see FIG. 10 and FIG. 11). (See (3)).
Thereafter, similarly to the steps (3) to (5) in the first embodiment, the organic EL layer 313, the common electrode 323, and the sealing layer 360 are formed (steps (4) to FIG. 11 in FIG. 10 and FIG. 11). (6)).
Here, when the organic EL layer 313 is formed by the ink-jet method, not only the hydrophilic treatment for the individual electrode 303 but also the water repellent treatment for the bank 305 allows the ink composition to be applied to the individual electrode 303 so as not to cover the bank 305. It is formed uniformly on 303.
[0046]
Next, a contact hole 330 is formed, and in the second embodiment, only the sealing layer 360 is opened (see step (7) in FIGS. 10 and 12). After that, a metal film such as aluminum is formed and patterned to form the connection terminal 340. As a result, the connection terminal 340 is electrically connected to the individual electrode 303 via the conductive material 309 filled in the bank 305 (see step (8) in FIGS. 10 and 12).
Then, similarly to the first embodiment, the completed TFT substrate 200 and EL substrate 300 are opposed to each other on the terminal forming surfaces, and the anisotropic conductor 400 is sandwiched between the two substrates. The two substrates are bonded together by thermocompression bonding in a state where they are aligned so that the 340s are integrally opposed to each other.
[0047]
In the second embodiment, as in the first embodiment, a bright display can be achieved by improving the light use efficiency and a high aperture ratio, and reducing display unevenness by using a metal electrode as the common electrode 323. Alternatively, the sealing layer 360 can prevent the organic EL layer from being deteriorated or broken. Furthermore, according to the second embodiment, compared to the first embodiment, the number of openings for achieving conduction from the connection terminal 340 to the individual electrode 303 is twice for each of the bank 305 and the sealing layer 360. Since the separation is performed separately, the depth required for one opening becomes shallow, and defects and defects such as chipping due to the opening and enlargement of the hole diameter due to the taper of the contact hole can be reduced.
[0048]
<Third embodiment>
Next, a third embodiment of the present invention will be described. FIGS. 13A and 13B are cross-sectional views illustrating a main configuration of an electro-optical device 100 according to the third embodiment. As shown in these drawings, in the third embodiment, the point that the structure of the TFT substrate 200 is the same, the TFT substrate 200 and the EL substrate 300 are opposed to each other on the terminal formation surface, and the terminals are electrically connected. In the first embodiment, the individual electrodes 303, the organic EL layer 313, and the like are sequentially arranged from the base material 301 of the EL substrate 300 in that they are bonded so that they are connected to each other. In contrast to the structure in which the common electrode 323 is stacked, the third embodiment is different from the first embodiment in that the common electrode 323 is stacked in the reverse order. That is, the third embodiment has a structure in which the common electrode 323, the organic EL layer 313, and the individual electrode 303 are laminated in order from the base material 301 of the EL substrate 300. Here, the individual electrode 303 provided for each pixel is electrically connected to the organic EL layer 313 corresponding to the pixel via a contact hole 330 (a conductive part therein) that opens only the sealing layer 360. Have been.
[0049]
The EL substrate 300 according to the third embodiment is manufactured by the following process, although not particularly shown. That is, after the common electrode 323 is formed of a transparent conductor on the surface of the base material 301, the bank 305 is formed, a light emitting layer is formed in a region partitioned by the bank 305, and a part of the bank 305 is formed. An individual electrode 303 is formed from a reflective metal film so as to be located above, and a sealing layer 360 is formed so as to cover these. Then, a contact hole 330 is formed, a sealing layer 360 is opened, and an individual electrode located above the bank 305 is exposed. Thereafter, a metal film such as aluminum is formed and patterned to form a connection. A terminal 340 is formed.
[0050]
In the third embodiment, similar to the first and second embodiments, not only the improvement of light use efficiency and the high aperture ratio enable a bright display, but also the deterioration of the organic EL layer by the sealing layer 360. And destruction can be prevented. Here, as described above, since the light emitted from the organic EL layer 313 is radiated downward on the paper via the base material 301, in the third embodiment, the individual electrode 303 is required to have reflectivity. The transparent conductivity of the common electrode 323 is required. For this reason, in the third embodiment, a relatively high-resistance ITO or the like must be used as the common electrode 323, so that the third embodiment is slightly disadvantageous in that display unevenness is likely to occur as compared with the first embodiment. is there.
However, in order to achieve conduction from the connection terminal 340 to the individual electrode 303, only the sealing layer 360 needs to be opened only once, so that the sealing layer 360 and the bank 305 are opened at one time. This is advantageous in comparison with the form and the second embodiment in which holes are opened in two separate steps.
In the third embodiment, the contact hole 330 is provided at the top of the bank 305. However, the contact hole 330 may be provided at any part as long as it is connected to the individual electrode 303.
[0051]
<Application / Deformation>
The present invention is not limited to the first, second, and third embodiments described above, and various applications and modifications are possible. For example, processes and components in the first, second, and third embodiments may be as described below.
[0052]
<Lamination>
In the above-described embodiment, the TFT substrate 200 and the EL substrate 300 are bonded to each other and the terminals are electrically connected by the anisotropic conductor 400. However, various other modes are assumed. You. For example, a protruding electrode (bump) may be formed on one of the extraction terminal 240 and the connection terminal 340 using, for example, gold (Au) or the like, and the substrates may be bonded together with the electrical connection of the terminals by heat fusion.
[0053]
<Contact hole conduction>
In the embodiment described above, the conductive portion in the contact hole 330 is formed collectively with the connection terminal 340, but may be formed separately. That is, after a conductive material is formed by filling the contact hole 330 with a conductive material, a metal film to be the connection terminal 340 may be formed and patterned to achieve conduction with the individual electrode 303.
[0054]
<Planarization of insulating layer>
In the above-described embodiment, the surfaces of the insulating layer 260 of the TFT substrate 200 and the sealing layer 360 of the EL substrate 300 are flattened. However, only one of them may be flattened. For example, when the sealing layer 360 of the EL substrate 300 is not flattened, it is considered that the portion of the bank 305 rises and the connection terminal 340 is formed in the rising portion. For this reason, since the connection terminal 340 having a raised portion is pressed against the flattened lead terminal 240, the reliability of the contact is considered to be increased. Further, since only the raised portions are in contact with each other, even if the terminals are slightly displaced during bonding of the TFT substrate 200 and the EL substrate 300, there is little possibility of contact with the terminals of adjacent pixels.
However, since the contact area between the terminals is reduced, if the contact resistance cannot be neglected, it is desirable to flatten the both and increase the facing area between the terminals as in the embodiment.
[0055]
<Pixel drive circuit>
In the embodiment described above, the pixel circuit 110 including the pixel driving circuit 250 has the configuration illustrated in FIG. 2, but the present invention is not limited to this, and pixel circuits having various configurations can be applied. For example, FIG. 14 is a diagram illustrating an example of a pixel circuit applicable to the present invention.
The pixel circuit 110 shown in FIG. 14 is different from the pixel circuit shown in FIG. 2 in that the connection around the gate of the TFT 212 is changed and that the TFTs 216 and 218 and the emission control line 208 are added. is there. Therefore, the following differences will be mainly described. First, the gate of the n-channel TFT 218 is connected to the i-th scanning line 202, and its drain is connected to the gate of the TFT 212 and one end of the capacitor 220, respectively. The source is connected to the drain of the TFT 212. Therefore, the TFT 218 is turned on when the scanning signal Yi becomes H level, and short-circuits between the gate and the drain of the TFT 212, thereby causing the TFT 212 to function as a diode.
Next, the n-channel type TFT 216 is interposed between the drain of the TFT 212 and the anode of the organic EL element 310. Specifically, the gate of the TFT 216 is connected to the light emission control line 208, the drain is connected to the drains of the TFTs 212 and 214, the source is connected to the anode of the organic EL element 310, and the TFT 216 is located at the i-th row. It turns on and off according to the logic level of the signal Vgi to the light emission control line 208 to be turned on.
[0056]
Here, the light emission control line 208 is provided in each row, and a signal Vgi obtained by inverting the logical level of the scanning signal Yi is supplied to the light emission control line 208 in the i-th row. Further, when the i-th scanning line 202 is selected, a current Iout corresponding to the luminance of the pixel in the i-th row and the j-th column flows through the data line 204 in the j-th column. For this reason, when the pixel circuit shown in FIG. 14 is applied, the D / A converter provided for each data line 204 in the data line driving circuit 160 is a constant current that flows a current Iout according to the supplied digital data. It functions as the source 162.
In the pixel circuit 110 shown in FIG. 14, the TFTs 212, 214, 216, and 218 and the capacitor 220 are formed on the TFT substrate 200 as the pixel driving circuit 250.
[0057]
Next, an operation of the pixel circuit 110 illustrated in FIG. 14 is described. First, when the scanning signal Yi becomes H level, the TFT 218 is turned on between the source and the drain, so that the TFT 212 functions as a diode. When the scanning signal Yi goes to the H level, the TFT 214 is turned on similarly to the TFT 218, so that the current Iout eventually flows through the power supply line 209 → TFT212 → TFT214 → data line 204. Is accumulated in the capacitor 220.
Subsequently, when the scanning signal Yi goes to the L level, both the TFTs 214 and 218 are turned off, but the charge accumulation state in the capacitor 220 does not change. Therefore, the gate of the TFT 212 is set to the voltage when the current Iout flows. Will be retained.
When the scanning signal Yi goes low, the light emission control signal Vgi goes high and the TFT 216 turns on, so that a current corresponding to the gate voltage flows between the source and the drain of the TFT 212. More specifically, this current flows through the power supply line 209 → TFT 212 → TFT 216 → Organic EL element 310.
[0058]
At this time, the current flowing through the organic EL element 310 is determined by the gate voltage of the TFT 212. The gate voltage is determined when the scanning signal Yi goes high and the current Iout flows through the data line 204. Is the voltage held by For this reason, when the light emission control signal Vgi goes to the H level, the current flowing through the organic EL element 310 substantially matches the current Iout that has just flowed, so that the organic EL element 310 sets the light emission control signal Vgi to the H level. As long as, the light emission continues at a luminance corresponding to the current value.
Therefore, even if the characteristics of the TFT 212 as a driving transistor vary throughout the pixel circuits 110, a current of substantially the same magnitude can be supplied to the organic EL element 310 included in each pixel circuit 110. Therefore, it is possible to suppress display unevenness due to the variation.
[0059]
Note that in the pixel circuit 110 illustrated in FIG. 14, the current Iout according to the digital value of the digital data is supplied to the data line 204 when the scanning line 202 is selected. A configuration in which a voltage is applied to the data line 204 may be employed.
In each of the pixel circuits 110 shown in FIGS. 2 and 14, the individual electrode 303 provided for each pixel is the anode of the organic EL element 310, and the common electrode 323 common to the pixels is It was a cathode.
Here, from the viewpoint of simplifying the doping process by unifying the channel types of a plurality of TFTs, a configuration in which the TFT 212 is an n-channel type as shown in FIG. 15 is also conceivable. In this configuration, as can be seen from the figure, an individual electrode provided for each pixel serves as a cathode of the organic EL element 310, and a common electrode common across the pixels serves as an anode of the organic EL element 310.
That is, the individual electrode in the present invention may be an anode like the pixel circuit shown in FIGS. 2 and 14 depending on the channel type of the drive transistor for driving the organic EL element 310, or may be an anode shown in FIG. It may be a cathode like a pixel circuit to be used. Conversely, the common electrode in the present invention may be a cathode as shown in FIGS. 2 and 14, or may be an anode as shown in FIG.
[0060]
<Silicon substrate, etc.>
In the EL substrate 300, transparency is required for the substrate 301 that transmits light emitted from the light emitting layer, but transparency is not required for the substrate 201 of the TFT substrate 200. Therefore, a substrate having no transparency, for example, a silicon substrate can be used as the base 201. When a silicon substrate is used in this manner, a MOS (Metal Oxide Semiconductor) transistor can be used instead of a TFT as a transistor, so that high-speed operation can be performed, which is advantageous not only for high-resolution display but also for scanning. Peripheral circuits such as the line drive circuit 140 and the data line drive circuit 160 can be easily integrated and integrated.
Alternatively, a silicon single crystal film may be formed on an insulating substrate such as sapphire, quartz, or glass by applying SOI (Silicon On Insulator) technology, and various active elements may be formed here.
[0061]
<Color display etc.>
In addition to the single-color pixels, the light-emitting layer is selected so that each of the three pixels emits R (red), G (green), and B (blue) colors. Color display may be performed as one dot.
On the other hand, another light emitting element such as an LED may be used instead of the organic EL element 310. That is, the present invention is applicable as long as the light emitting element has a structure in which the light emitting layer is sandwiched between the individual electrode for each pixel and the common electrode common to the pixels.
[0062]
<Electronic equipment>
Next, an example in which the above-described display system 10 is incorporated in a specific electronic device will be described. FIG. 16 is a block diagram illustrating an electrical configuration of a mobile personal computer assumed as an example of an electronic device, and FIG. 17 is a perspective view illustrating a configuration of the personal computer.
As shown in FIG. 17, the personal computer 2100 includes a main body 2104 having a keyboard 2102 and the electro-optical device 100 as a display unit. In FIG. 16, the CPU 20 controls each unit via a bus 21. The ROM 22 stores a basic access control program (BIOS) and the like, and the RAM 24 is used as a work area of the CPU 20. An HDD (hard disk drive) 26 stores an operation system and various application programs. The operation unit 28 detects an operation state of the keyboard 2102, and outputs a signal indicating the operation content to the CPU 20.
In the personal computer 2100, the CPU 20 generates digital data Dmem in accordance with the operation state of the keyboard 2102, execution of an application program, and the like, and rewrites the storage contents of the image memory 130 in the display system 10. Therefore, the organic EL element 310 in each pixel of the electro-optical device 100 emits light at the luminance specified by the digital data stored in the corresponding storage area in the image memory 130, whereby an image is displayed. .
[0063]
As the electronic apparatus to which the electro-optical device 100 is applied, in addition to the personal computers shown in FIGS. 16 and 17, a mobile phone, a digital still camera digital television, a viewfinder type or a monitor direct-view type video tape may be used. Examples include a recorder, a car navigation device, a pager, an electronic organizer, a calculator, a word processor, a workstation, a videophone, a POS terminal, and a device having a touch panel. It goes without saying that the above-described electro-optical device 100 can be applied as a display unit of these various electronic devices.
[0064]
As described above, when a substrate on which a light-emitting element is formed and a substrate on which a concentration element for driving the light-emitting element is bonded are bonded, deterioration and destruction of the light-emitting element can be suppressed. .
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a system configuration including an electro-optical device according to an embodiment.
FIG. 2 is a circuit diagram showing a configuration of a pixel circuit in the electro-optical device.
FIG. 3 is a cross-sectional view illustrating a main configuration of the electro-optical device.
FIG. 4 is a plan view showing a configuration of a TFT substrate in the electro-optical device.
FIG. 5 is a view showing a connection surface of the TFT substrate.
FIG. 6 is a diagram showing a connection surface on an EL substrate of the same electro-optical device.
FIG. 7 is a manufacturing process diagram of the electro-optical device.
FIG. 8 is a diagram showing the manufacturing process.
FIG. 9 is a diagram showing the manufacturing process.
FIG. 10 is another manufacturing step diagram.
FIG. 11 is a diagram showing the manufacturing process.
FIG. 12 is a diagram showing the manufacturing process.
FIG. 13 is a sectional view showing another configuration of the electro-optical device.
FIG. 14 is a circuit diagram showing another configuration of the pixel circuit.
FIG. 15 is a circuit diagram showing another configuration of the pixel circuit.
FIG. 16 is a diagram showing a configuration of a personal computer using the same electro-optical device.
FIG. 17 is a diagram showing a configuration of a personal computer using the same electro-optical device.
[Explanation of symbols]
100: electro-optical device, 200: TFT substrate (second substrate), 202: scanning line, 204: data line, 209: power line, 212: TFT (driving transistor), 214: TFT (switching transistor), 220: capacitance Element, 240: lead-out terminal (second connection terminal), 250: pixel drive circuit (drive circuit), 300: EL substrate (first substrate), 301: base material, 303: individual electrode, 305: bank (partition) , 307: hole, 309: conductive material, 310: organic EL element, 313: organic EL layer, 323: common electrode, 325: opening, 330: contact hole, 340: connection terminal (first connection terminal) Reference numeral 360: sealing layer, 400: anisotropic conductor, 410: microcapsule, 2100: personal computer

Claims (19)

An electro-optical device having a first substrate and a second substrate,
The first substrate includes:
A substrate having transparency,
A plurality of light emitting elements each having an individual electrode and a light emitting layer, and having in common a common electrode facing the individual electrode with the light emitting layer interposed therebetween,
An electrically insulating sealing layer covering the light emitting element,
A first connection terminal provided to face the individual electrode with the sealing layer interposed therebetween;
A conductive portion provided through the sealing layer and electrically connecting the individual electrode and the first connection terminal;
The second substrate includes:
A driving circuit for driving each of the plurality of light emitting elements;
A second connection terminal provided to correspond to the first connection terminal and connecting the drive circuit and the plurality of light emitting elements;
An electro-optical device in which the first connection terminal provided on the first substrate and the second connection terminal provided on the second substrate are electrically connected. The electro-optical device according to claim 1, wherein the individual electrode is located closer to the substrate than the common electrode. The electro-optical device according to claim 2, wherein the individual electrode has transparency, and the common electrode has reflectivity. The first substrate includes a partition partitioning the light emitting layer,
The electro-optical device according to claim 2, wherein the connection portion is provided to penetrate the sealing layer and the partition. The electro-optical device according to claim 1, wherein the common electrode is located closer to the substrate than the individual electrodes. The electro-optical device according to claim 5, wherein the common electrode has transparency, and the individual electrodes have reflectivity. The first substrate includes a partition partitioning the light emitting layer,
The electro-optical device according to claim 5, wherein at least a part of the first connection terminal is disposed above the partition. The light emitting layer includes an organic electroluminescent layer,
The electro-optical device according to claim 1, wherein the light-emitting element is an organic EL element having one of the individual electrode and the common electrode as a cathode and the other as an anode. The second substrate has a plurality of scanning lines and a plurality of data lines crossing each other,
The drive circuit is provided corresponding to an intersection of the plurality of scanning lines and the plurality of data lines,
A switching transistor that is turned on when a scanning line corresponding to the intersection is selected;
When the switching transistor is turned on, a capacitance element that accumulates a charge corresponding to an electric signal on a data line corresponding to the intersection,
2. The electro-optic device according to claim 1, further comprising: a driving transistor whose one terminal is electrically connected to the second connection terminal and whose operation state is determined in accordance with electric charge stored in the capacitor. 3. apparatus. The electro-optical device according to claim 1, wherein the drive circuit includes a thin film transistor. An electronic apparatus comprising the electro-optical device according to claim 1. A plurality of light-emitting elements each having a transparent base material, an individual electrode and a light-emitting layer, each having a common electrode facing the individual electrode with the light-emitting layer interposed therebetween, and an electric insulation covering the light-emitting element A sealing layer, a first connection terminal provided to face the individual electrode with the sealing layer interposed therebetween, and a first connection terminal provided through the sealing layer, wherein the individual electrode and the first An electro-optical device substrate that is used in connection with a substrate including a conductive portion that electrically connects the connection terminal, and
A driving circuit for driving each of the plurality of light emitting elements;
An electro-optical device substrate that is provided so as to be connectable to the first connection terminal and includes a second connection terminal for electrically connecting the drive circuit and the plurality of light emitting elements. A substrate having transparency,
A plurality of light emitting elements each having an individual electrode and a light emitting layer, and having in common a common electrode facing the individual electrode with the light emitting layer interposed therebetween,
An electrically insulating sealing layer covering the light emitting element,
A first connection terminal provided to face the individual electrode with the sealing layer interposed therebetween;
A substrate for an electro-optical device, comprising: a conductive portion provided through the sealing layer to electrically connect the individual electrode and the first connection terminal. On a transparent substrate,
Forming a plurality of light-emitting elements by stacking a plurality of individual electrodes, a light-emitting layer, and a common electrode;
Forming a sealing layer covering the plurality of light emitting elements;
Forming a plurality of first connection terminals that penetrate at least the sealing layer and are electrically connected to the plurality of individual electrodes,
On a substrate different from the substrate having the transparency,
Forming a drive circuit for driving each of the plurality of light emitting elements;
Forming a second connection terminal for connecting the drive circuit and the plurality of light emitting elements corresponding to the first connection terminal;
A method for manufacturing an electro-optical device, comprising: a step of electrically connecting the first connection terminal and the second connection terminal. The step of electrically connecting the first connection terminal and the second connection terminal includes the step of providing an anisotropic conductive material between the first connection terminal and the second connection terminal. The method for manufacturing an electro-optical device according to claim 14, comprising: The step of forming the plurality of light emitting elements,
After the step of forming the plurality of individual electrodes,
Forming a partition for partitioning the plurality of light emitting elements,
Forming the light emitting layer in a region partitioned by the partition wall;
Forming the common electrode avoiding a region where the sealing layer is expected to penetrate,
15. The electro-optical device according to claim 14, wherein the step of forming the first connection terminal includes a step of opening the predetermined region of the sealing layer and the partition to expose a part of the individual electrode. Device manufacturing method. The step of forming the plurality of light emitting elements,
After the step of forming the plurality of individual electrodes,
A step of forming a partition for partitioning the plurality of light emitting elements so as to have a plurality of openings reaching the plurality of individual electrodes,
Applying a conductive material to the plurality of openings,
Forming the light emitting layer in a region partitioned by the partition wall;
Forming the common electrode so as not to contact the conductive material,
The step of forming the first connection terminal includes:
The method of manufacturing an electro-optical device according to claim 14, further comprising a step of opening the sealing layer to expose a part of the conductive material. The step of forming the plurality of light emitting elements,
After laminating the common electrode,
Forming a partition for partitioning the plurality of light emitting elements,
Forming the light emitting layer in a region partitioned by the partition wall;
Forming the plurality of individual electrodes so that at least a part thereof is located above the partition wall,
The step of forming the first connection terminal includes:
The method of manufacturing an electro-optical device according to claim 14, further comprising: opening the sealing layer to expose a part of the individual electrode formed above the partition. 19. The method of manufacturing an electro-optical device according to claim 16, wherein the step of forming the light emitting layer includes a step of applying a liquefied light emitting material to a region partitioned by the partition.

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