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JP2004289153A - 半導体パッケージ用のワイヤボンディング - Google Patents

半導体パッケージ用のワイヤボンディング Download PDF

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Publication number
JP2004289153A
JP2004289153A JP2004078424A JP2004078424A JP2004289153A JP 2004289153 A JP2004289153 A JP 2004289153A JP 2004078424 A JP2004078424 A JP 2004078424A JP 2004078424 A JP2004078424 A JP 2004078424A JP 2004289153 A JP2004289153 A JP 2004289153A
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Prior art keywords
wire
ball
bonding
chip
interconnect
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JP2004078424A
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Inventor
Kazuaki Ano
一章 阿野
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

【課題】 非常に薄いワイヤボンディングされた半導体アッセンブリを得ること。
【解決手段】 （５）半導体チップ（３０１）の表面（３０１ａ）上に少なくとも一つのコンタクトパッド（３２０）を含む集積回路（ＩＣ）を有する半導体チップのアッセンブリであって、前記コンタクトパッドは、ワイヤボンディングに適したメタライゼーション及び前記コンタクトパッドにボンディングされた相互接続を有する。この相互接続は、ボールボンディング（３０５）によって前記パッドに取り付けられたワイヤ（３０４）、前記ワイヤを前記ボールの近くのそれ自体（３０７）にボンディングすることによって閉じられた前記ワイヤにおけるループ（３０６）、及び前記チップの前記表面にほぼ平行に延びる前記ワイヤの残りの部分を有する。前記相互接続は、前記表面からボール３つ分の高さに等しいかそれより小さい間隔（３０８）に制限されることができる。
【選択図】 図３

Description

本発明は、一般に、半導体デバイスの分野に関し、特に、非常に薄いワイヤボンディングされた半導体パッケージに関する。
半導体産業における現在の傾向は、薄い縦断面を有するデバイスの必要性である。薄いデバイスを達成するための主なハードルの１つは、大多数の集積回路チップ対する主なアッセンブリ技術である、ワイヤボールボンディング技術の本来の特徴である。ワイヤボールボンディング・プロセスにおいて、形状がほぼ球形であるフリーエアボール(free air ball)がフレーム（炎）またはスパーク技術を用いてワイヤの先端に形成される。このボールを形成するためのワイヤの小さな体積を溶かすのに必要な熱は、金属を実際に溶かすことなく、ワイヤのある長さに沿って広がることが避けられない。この熱影響ゾーン（熱の影響を受けるゾーン）の広がりは、他のパラメータ間で、ワイヤ金属の熱伝導性に依存する。最も一般的には、金、銅、アルミニウム、またはこれら金属の合金がワイヤの材料として用いられる。ボールが冷えて固まると、熱影響ゾーンの冷却は、ワイヤの再結晶を生じ、その結果、本来の微晶質（microcrystalline)が少し大きな結晶になる傾向がある。代わって、これらの結晶は、力によって容易に分離し、従って、熱影響ゾーンにおけるワイヤの機械的強度が減少する。
従来のボールンディング技術では、熱影響ゾーンにおける機械的強度の減少は、ボールがコンタクトパッド（例えば、集積回路の）に先ず取り付けられ、その後、ワイヤが熱影響ゾーンの長さに対するボール上の垂直位置に達するようにされる処理によって補償される。この垂直ストレッチの後にのみ、ワイヤが曲線に形成され、ステッチボンドのコンタクトパッドへの距離を橋絡するループ状の曲がりになる。熱影響ゾーンによって必要とされる通常のハイループは、ワイヤボールボンディングの特徴である。もし、ワイヤの曲線及び曲がりが直接ボール上で始まるなら、ワイヤは、容易に切れたり折れたりするであろう。
従って、高いアーチ状のワイヤループの必要性のないワイヤボールボンディングの本来的にローコストの方法の必要性が起きている。この革新的なワイヤボールボンディングは、新しい製造機械の投資が必要とされないように、備え付けられた装置を使用する必要がある。この方法は、いろいろな半導体製品及び広い範囲の設計と組立ての変化に応用されるように充分フレキシブルである必要があり、また改善されたプロセスの歩留まり及びデバイスの信頼性という目的に向かって改良を行なう必要がある。
本発明の一つの実施例は、半導体チップの表面上に少なくとも一つのコンタクトパッドを含む、集積回路を有する半導体チップのアッセンブリであり、このコンタクトパッドは、ワイヤボンディングをするのに適したメタライゼーション、及びコンタクトパッドにボンディングされる相互接続（配線）を有する。この相互接続は、ボールボンディングによってパッドに取り付けられるワイヤ、ワイヤをボール近くのそれ自身（ワイヤ）にボンディングすることによって閉じられるワイヤにおけるループ、及びチップの表面にほぼ平行に延びたワイヤの残りの一部を含む。この相互接続は、表面から約ボール３つ分の高さに等しいか、またはそれより小さな間隔に制限されることができる。
本発明の他の実施例では、第１と第２の表面を有する電気的絶縁基板及び基板と一体化された複数の電気的導電性配線ストリップ(routing strip)が第１の表面上に設けられた第１の複数のコンタクトパッドと第２の表面上に設けられた第２の複数のコンタクトパッドを有する。複数のボンディングパッドを有するＩＣチップが第１の基板表面に取り付けられる。少なくとも幾つかのボンディングパッドがボールボンディングによって取り付けられたワイヤの相互接続を有する。この相互接続は、ワイヤをボール近くのそれ自体にボンディングすることによってワイヤの閉ループを有し、且つワイヤの残りの一部は、表面にほぼ平行に延びてチップの表面をチップのエッジに橋をかける。最後に、それぞれのワイヤは、第１の基板表面上のそれぞれの基板コンタクトパッドにボンディングされ、チップとワイヤはカプセルに入れられる。相互接続のエレメントは、第２の基板表面上のコンタクトパッドのそれぞれに取り付けられることができる。
本発明の他の実施例は、半導体チップ上にＩＣ及びワイヤボンディングをするのに適したメタライゼーションを有する少なくとも一つのコンタクトパッドを有する半導体チップ用の低い縦断面（プロファイル）のパッケージに対して低い縦断面のワイヤボンディングを形成する方法である。その後、ループがワイヤに形成され、そのループは、ワイヤをボール近くのそれ自体にステッチすることによって閉じられる。
本発明のこれらの実施例は、例えば、メモリデバイスのスタック（積み重ね）及び小さくされた製品に必要な薄いデバイス及びパッケージに関する。これらの、及び類似の製品のためのＩＣは、多くの半導体デバイスのグループ、例えば、標準のリニア及びロジック製品、ディジタル信号プロセッサ、マイクロプロセッサ、ワイヤレス装置、及びディジタル及びアナログ装置に見出すことができる。これらの実施例は、いろいろな金属、例えば、金、銅、またはアルミニウムのワイヤに適用する。
薄い外形のデバイスの他の実施例は、リードフレームを伴うパッケージを含む。本発明の実施例は、リードフレームを用いるＰＤＩＰｓ、ＳＯＩＣｓ、ＱＦＰｓ、ＳＳＯＰｓ、ＴＱＦＰｓ、ＴＳＳＯＰｓ、ＴＶＳＯＰｓ及びボールグリッドアレーデバイスのような半導体パッケージ型に一般に適用する。
これらの実施例は、据付けられた製造装置、特に自動化されたボンディングワイヤマシンを使用することによって、設備変更の費用および新規の資本投下のないローコストの製造方法によって本発明の目的を達成することができることは、本発明の１つまたはそれ以上の実施例の技術的利点である。
本発明の１つまたはそれ以上の実施例から生じる他の利点は、リフロー可能な材料を含む、または圧接するだけの相互接続素子を有する、パッケージと共に薄い外形のデバイスを製造することである。
本発明のある実施例によって示される技術的な改善は、添付図面及び請求項に記載れた新規な特徴と共に考慮すると、本発明の好適な実施例の以下の説明から明らかになるであろう。
本発明の技術的な改善は、既知の技術の欠点と比較することによって最もよく理解されるであろう。
図１（Ａ）は既知の技術を概略示しており、代表的なワイヤボンディングプロセスは、１５０℃〜３００℃の温度に上昇するために加熱されたペデスタル１０３上にある基板１０２に取り付けられる半導体チップ１０１を位置決めすることによって始まる。ワイヤ１０４は、キャピラリー１０５を通して吊り下げられ、キャピラリーの先端から短い距離１０６を延ばす。一例として、２５μｍ直径の金のワイヤ１０４に対して、この距離１０６は５０〜１５０μｍにすることができる。
図１（Ｂ）に示されるように、ワイヤの先端においてフリーエアボール１０７がフレーム（炎）またはスパーク技術１０８のいずれかを用いて作られる。このボール１０７は、約１.２〜４.０ワイヤ直径の代表的な直径を有しており、好ましくはキャピラリーの外にある。選ばれたワイヤ金属または合金の熱伝導率、フレームまたはスパークへ曝された時間、及び例えばキャピラリーの近接どのような他のパラメータに依存して、熱は、ワイヤを実際に溶かすことはないがワイヤの微小結晶度(micro-crystallinity)に影響を与える充分な温度上昇によって、エアボールからワイヤに沿ってある距離１１０へ広がる。おおざっぱなやり方として、この熱影響ゾーン１１０の広がりは、著しい再結晶を伴う約１〜１.５フリーエアボールの直径の長さ、及び時には、僅かな再結晶を伴う１０エアボール直径まで更に長さ１１１を有する。
この再結晶により、曲げたり、引っ張ったりするためにワイヤの機械的な強度は、熱影響ゾーン１１０の少なくとも長さに対してかなり弱められる。例えば、熱影響ゾーン内のワイヤの曲げは、マクロの結晶粒界に沿って容易にスリップするために早期のワイヤ破損を導くことがある。
キャピラリーがボンディングパッド１２０に向かって移動され、図１（Ｃ）に示されるように、ボールがパッドのメタライゼーションに対してキャピラリーに押し付けられる。このプロセスにおいてボールは変形され、一般的な形状は“ネイルヘッド（釘の頭）”のように見えるが、便宜上それは依然としてボンドの“ボール”と呼ばれる。ボール形成（圧着力に加えて超音波エネルギーを含む）後、キャピラリーは、熱影響ワイヤゾーンの少なくともある長さに対してワイヤが曲がるのを避けるために、真上に持ち上げられなければならない。従って、キャピラリーがステッチボンド１２２によってワイヤを基板１０２のコンタクトパッド１２２に取り付ける前に、適切に定められた形状のワイヤアークを形成するために、キャピラリーは、空中を通って所定の、コンピュータ制御された方法で移動する。ワイヤアークの高さ１１２は、原則的に弱い熱影響ゾーン１１０によって決められる。
最後のアッセンブリステップにおいて、図１（Ｅ）示されるように、チップ１０１とワイヤ１０４は、封入物質１３０によって保護される。図１（Ｅ）に示されるように、仕上げのパッケージされたデバイスの厚さ１３２の大部分１３１は、パッケージ内のワイヤアークの高さ１２によって決められる。しかし、薄い半導体パッケージに向って進行中の技術的傾向にとって、高さ１３２は、薄いパッケージを必要とする多くの電子製品のニーズに合わない。
本発明の一つの実施例を図２に概略示す。この実施例は、第１の場所にアークをもたらしたワイヤアークと熱影響ワイヤゾーンの弱さを減少することによって、パッケージの厚さのジレンマを解決する。仕上げのパッケージされたデバイスの厚さ２３２は、封入方法（例えば、トランスファ成形）の実質的に関数である高さ部分２３１によって決まるだけである。
ワイヤボンディングに適したメタライゼーションを有する集積回路の表面１０１上の少なくとも一つのコンタクトパッド１２０を含む集積回路を有する半導体チップ１０１は、パッケージの内部にある。このメタライゼーションの例は、アルミニウム、銅、金、銀、パラジウム、或いはそれらの合金を含む。ボールボンディング２０５によってパッド１２０に取り付けられたワイヤ２０４からなる相互接続は、コンタクトパッド１２０にボンディングされる。好適なワイヤ材料の例は、金、銅、アルミニウム、及びそれらの合金を含む。ワイヤをボール２０５の近くにあるそれ自体（ワイヤ）にボンディングすることによって閉じられるワイヤ２０４のループ２０６は、（ボンディングプロセス中に、キャピラリーを例えばネイルヘッド形状にプレスすることによって変形された）“ボール”２０５の近くにある。ワイヤ２０４の残りの部分２０７は、チップ表面１０１ａにほぼ平行に延ばされる。相互接続ワイヤ２０４の端部は、ボンド２２２で基板１０２のコンタクトパッド１２１に接続される。例えば、ボンド２２２は、ステッチボンドを用いることができる。コンタクト材料の好適な例は、銅及び金被覆された銅である。
図３に概略示された本発明の他の実施例において、相互接続は、ＩＣ表面３０１ａから約ボール３個分の高さ３０９に等しいか、それより小さい間隔３０８に制限される。半導体チップ３０１は、ＩＣ及び一つのコンタクトパッド３２０を含んで、その表面３０１ａと共に示されている。コンタクトパッド３２０は、ワイヤボンディングに適したメタライゼーション、例えばアルミニウム、銅、金、またはそれらの合金を含む。ワイヤ３０４は、金、銅、アルミニウム、またはそれらの合金から成るのが好ましい。
ボンドパッド３２０に冶金的に溶接されたネイルヘッドと類似している相互接続のボールボンド３０５が図３に示される。ボール３０５を有するネック３１０において、ワイヤ３０４は、ワイヤ材料の再結晶が最も著しい熱影響ゾーンにおいて直接強く曲げられている。ループ３０６を形成した後、そのループは、ワイヤの長さ３０７が熱影響ゾーンにおいて曲げられたワイヤ部分においてキャピラリーによって直接ステッチボンドとしてプレスされるように、ワイヤボンドの長さ３０７に沿って閉じられる。その結果、ボールの隣にあるワイヤの再結晶された部分の機械的強度が増強される。図３に示されたループの形状は、ＩＣ表面にごく近接して相互接続を可能にするために、ボールボンドの熱影響ゾーンの機械的強度を増強する目的を与えるいろいろ可能なワイヤ形状のただ一つの例である。ワイヤ３０４の残りの部分３１１は、表面３０１ａにほぼ平行に延ばされる。
本発明の他の実施例における低い高さのワイヤループを形成するためのプロセスが概略且つ簡単化した図４（Ａ）〜図４（Ｆ）の順番（シーケンス）に示されている。このシーケンスにおいて、自動化されたボンディングマシン（ボンダー）のキャリラリーがコンピュータ制御されたプログラムによって移動される。商業的に利用可能なコンピュータ化されたボンダーの例は、Willow Grove, PA, U.S.A.のKulicke & Soffaによるボンダー、またはDallas, TX, USAのTexas Instrumentによる ABACUS SA、及び日本のShinkawaによるボンダーなどである。空中を通して所定の、コンピュータ制御された方法で、キャリラリーを移動することによって適切に定められた形状のワイヤループを形成する。
図４（Ａ）において、キャピラリー４０１は、フリーエアボール４０２を半導体チップ４０３の表面４０３ａ上にあるＩＣのボンドパッドにボンディングする。図４（Ｂ）において、キャピラリー４０１は、上昇し、従ってネック４０４ａから始まる熱影響ゾーンを含むワイヤ４０５のある長さ４０４を露出する。図４（Ｃ）において、キャピラリー４０１は、ボール４０２近くの熱影響ゾーンにおけるワイヤ４０５を曲げて、一方向に横に移動し、移動の方向にワイヤを延ばす。図４（Ｄ）において、キャピラリー４０１は、位置４０７においてワイヤを曲げて、僅かに上昇し、その後位置４０８においてワイヤを延ばして横の移動を逆方向にする。図４（Ｅ）において、キャピラリー４０１は、ネック４０４ａ上で垂直に位置するまで逆方向に横に移動する。その後キャピラリー４０１はボール４０２に向かって移動し、従って（図３に詳細に示されているように）ワイヤ４０５をボール近くのそれ自体（ワイヤ）にボンディングする。このステッチボンディングは閉ループ４０９つくり、ワイヤのネック４０４ａにおける熱影響ゾーンを補強する。図４（Ｆ）において、キャピラリー４０１は、チップ表面４０３ａにほぼ平行に、好ましくは、表面４０３ａから約ボール３つ分の高さに等しいかまたはそれより小さな距離を保って、逆方向に横に移動しつづける。キャピラリーのこの連続した横への移動は、チップのエッジ４０３ｂまで少なくともチップ表面４０３ａに及ぶ。その後、ワイヤ４０５は、基板のような外部パーツ上のコンタクトパッドに取り付けられることができる。
図４（Ａ）〜図４（Ｆ）におけるアッセンブリプロセスフローを含む、全体のデバイスアッセンブリの例は、図５に概略示される本発明の他の実施例によって示される。半導体チップ５０１はアクティブな表面（能動面）５０１ａとパッシブな表面（受動面）５０１ｂを有する。アクティブな表面は、ＩＣ及びワイヤボンディングに適したメタライゼーションを有する複数のコンタクトパッドを含む。図４（Ａ）〜図４（Ｆ）に示されたプロセスフローによって作られるボールボンドの相互接続５０２は、各々のコンタクトパッドに取り付けられている。各々のボールボンド近くのワイヤにおけるループ５０３により、相互接続の機械的強度が補強されている。相互接続５０２の一部５０４は、ボールの３倍の高さに等しいかまたはそれより小さい距離だけ表面５０１ａにほぼ平行に延びている。
更に、図５に示された実施例は、第１の表面５１０ａと第２の表面５１０ｂを有する電気的絶縁基板５１０を含む。基板５１０は複数の一体化した電気的に導電性の配線ストリップを含む。第１の複数のコンタクトパッド５１１が第１の表面５１０ａに設けられ、第２の複数のコンタクトパッド５１２が第２の表面５１０ｂに設けられる。パッシブなチップ表面５０１ｂは、層５２０のチップ取り付け材料を用いて第１の基板表面５１０ａに取り付けられる。
ワイヤの相互接続５０２は、部分５０４に用いられないワイヤのバランスを基板コンタクトパッド５１１上のステッチボンドに延ばすことによって完成される。更に、チップ５０１及び複数の完成された相互接続５０２は、封入成形材料５３０によって封入される。好適な材料は、トランスファ成形プロセスにおいて与えられるエポキシ成形材料である。相互接続５０２の、チップ表面５０１ａへの接近により、封入成形材料の厚さ５３０ａは、封入技術が許す限りその縦断面を薄くすることができる。図５に示された実施例において、相互接続素子５４０が基板５１０の第２の表面５１０ｂ上のそれぞれのコンタクトパッドに取り付けられる。相互接続素子の例は、リフロー材料、例えば錫、インジウム、錫／インジウム、錫／銀、錫／ビスマス、及び錫／鉛を含む錫合金、導電性接着材、及びｚ−軸導電性材料から作られたものである。
本発明の他の実施例において、基板５１０の第２の表面上のコンタクトパッド５１２は、外部パーツへの圧力コンタクトとして用いられる。
本発明は、実施例を参照して説明されたけれども、この説明は限定する意味に解釈されることを意図していない。いろいろな変更及び実施例の組み合わせばかりでなく、この説明を参照すれば本発明の他の実施例が当業者に明らかであろう。例として、半導体チップの材料は、シリコン、シリコン・ゲルマニウム、ガリウム・砒素、またはＩＣの製造に用いられる他の全ての半導体または化合物材料を含む。
他の例として、ボールボンディングされたワイヤの再結晶ゾーンの強さを補強するワイヤループを含む低い高さの相互接続構成は、図６の概略断面図に示されたマルチチップ製品、または図７の概略断面図に示されたスタックされたチップ製品においてＩＣチップを相互接続するために用いることができる。
他の例として、ボールボンディングされたワイヤの再結晶ゾーンの強さを補強するワイヤループを含む低い高さの相互接続構成は、高電力を必要とする領域を相互接続しなければならない場合、ＩＣｓにおける追加のメタライゼーションレベルの置き換えとしてチップの表面上に用いることができる。その例は図８の概略上面図に示されている。
従って、請求項はこのような変更または実施例を含むことが意図される。
以上の記載に関連して、以下の各項を開示する。
（１）半導体デバイスアッセンブリであって、
半導体チップ表面上に少なくとも一つのコンタクトパッドを含む集積回路を有する半導体チップと、
前記コンタクトパッドにボンディングされる相互接続と、
を有し、
前記相互接続は、ボールボンディングによって前記パッドに取り付けられたワイヤ、前記ワイヤを前記ボールの近くのそれ自体にボンディングすることによって閉じられた前記ワイヤにおけるループ、及び前記チップの前記表面にほぼ平行に延びる前記ワイヤの残りの部分を有することを特徴とする半導体デバイスアッセンブリ。
（２）前記相互接続は、前記表面からボール３つ分の高さに等しいかそれより小さい間隔に制限されることができることを特徴とする前記（１）項に記載の半導体デバイスアッセンブリ。
（３）更に、前記相互接続によって半導体チップに取り付けられた基板表面上のコンタクトパッドに取り付けられたリフロー可能な材料を含む相互接続素子を有することを特徴とする前記（１）項に記載の半導体デバイスアッセンブリ。
（４）前記相互接続は、アクティブ表面からボール３つ分の高さに等しいかそれより小さい間隔に制限されること特徴とする前記（３）項に記載の半導体デバイスアッセンブリ。
（５）半導体チップ（３０１）の表面（３０１ａ）上に少なくとも一つのコンタクトパッド（３２０）を含む集積回路（ＩＣ）を有する半導体チップのアッセンブリであって、前記コンタクトパッドは、ワイヤボンディングに適したメタライゼーションおよび前記コンタクトパッドにボンディングされた相互接続を有する。この相互接続は、ボールボンディング（３０５）によって前記パッドに取り付けられたワイヤ（３０４）、前記ワイヤを前記ボールの近くのそれ自体（３０７）にボンディングすることによって閉じられた前記ワイヤにおけるループ（３０６）、及び前記チップの前記表面にほぼ平行に延びる前記ワイヤの残りの部分を有する。前記相互接続は、前記表面からボール３つ分の高さに等しいかそれより小さい間隔（３０８）に制限されることができる。
従来の技術によるワイヤボールボンドを取り付けるプロセスステップにおける高温ステージ上の半導体チップ及び基板の一部の概略および簡単化した断面図である。 従来の技術によるワイヤボールボンドを取り付けるプロセスステップにおける高温ステージ上の半導体チップ及び基板の一部の概略および簡単化した断面図である。 従来の技術によるワイヤボールボンドを取り付けるプロセスステップにおける高温ステージ上の半導体チップ及び基板の一部の概略および簡単化した断面図である。 従来の技術によるワイヤボールボンドを取り付けるプロセスステップにおける高温ステージ上の半導体チップ及び基板の一部の概略および簡単化した断面図である。 従来技術によりワイヤボールボンディングされ、基板に取り付けられ、及び封入された半導体チップの一部の概略断面図を示す。 本発明によりワイヤボンディングされ、且つ基板に取り付けられ、封入された半導体チップの一部の概略断面図を示す。 本発明によるワイヤボールボンディングの相互接続構成の概略断面図である。 本発明によるアッセンブリ方法のプロセスステップを説明する概略及び簡単化した断面図である。 本発明によるアッセンブリ方法のプロセスステップを説明する概略及び簡単化した断面図である。 本発明によるアッセンブリ方法のプロセスステップを説明する概略及び簡単化した断面図である。 本発明によるアッセンブリ方法のプロセスステップを説明する概略及び簡単化した断面図である。 本発明によるアッセンブリ方法のプロセスステップを説明する概略及び簡単化した断面図である。 本発明によるアッセンブリ方法のプロセスステップを説明する概略及び簡単化した断面図である。 本発明による低い高さのボールボンディング相互接続を有する完成された薄いが医薬ボールグリッドアレー製品を示す、本発明の実施例の概略断面図を示す。 本発明によるチップの相互接続を有するマルチチップ製品を示す、本発明の実施例の概略断面図を示す。 本発明によるチップの相互接続を有するスタックされたチップ製品を示す、本発明の実施例の概略断面図を示す。 追加の高電力メタライゼーションレベルの代わりとして、本発明による相互接続されたＩＣのボンドパッドを示す、本発明の実施例の概略上面図である。

Claims (1)

  1. 半導体デバイスアッセンブリであって、
    半導体チップ表面上に少なくとも一つのコンタクトパッドを含む集積回路を有する半導体チップと、
    前記コンタクトパッドにボンディングされる相互接続と、
    を有し、
    前記相互接続は、ボールボンディングによって前記パッドに取り付けられるワイヤ、前記ワイヤを前記ボールの近くのそれ自体にボンディングすることによって閉じられた前記ワイヤにおけるループ、及び前記チップの前記表面にほぼ平行に延びる前記ワイヤの残りの部分を有することを特徴とする半導体デバイスアッセンブリ。
JP2004078424A 2003-03-24 2004-03-18 半導体パッケージ用のワイヤボンディング Pending JP2004289153A (ja)

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