JP2004281328A - Defective correction method and defective correction device of electrode for organic el panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of correcting the electrode defect of an organic EL panel in which the short circuit defective part of the electrode of the organic EL panel is corrected by removing by irradiation of YAG laser and in which the defect is corrected without giving damage to the under layer of the defective part by laser irradiation, and a device implementing such method. <P>SOLUTION: In the process of YAG laser irradiation for removing the defective part made of the electrode and also the electrode forming membrane, a process of irradiating the YAG laser to the defective part and measuring the removed depth by a depth measurement head is performed at least once or more. By the relationship of the measured depth and the thickness before correction of the electrode forming membrane grasped beforehand, the correction processing degree at that point of time is grasped and thereby, the irradiation of YAG laser after measurement is adjusted. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a defect repair method and a defect repair device for an electrode portion for an organic EL, and more particularly to an organic EL device for repairing a short defect portion of an electrode provided for an organic EL panel by irradiating the electrode with a YAG laser. The present invention relates to a defect repair method for a panel electrode and a defect repair apparatus for performing the method.
[0002]
[Prior art]
In recent years, by using electroluminescence (hereinafter, referred to as organic EL) of an organic compound material that emits light by current injection, a plurality of organic EL elements each including a light emitting layer formed of a thin film of such an organic EL material are arranged in a matrix. Organic EL display panels have come to be used as mobile terminals and in-vehicle panels.
In the future, it will be used for the display of personal computers.
An organic EL element using an organic compound material as a light emitter has a wider viewing angle, better contrast, better visibility than a liquid crystal element, and can be thinner and lighter because a backlight is not required. It is also advantageous in terms of speed and quick response.
Since they are all solid, they are resistant to vibration and have a wide operating temperature range.
[0003]
The structure of an organic EL element is basically a structure in which an organic compound-containing (EL layer) is sandwiched between a pair of electrodes of an anode and a cathode. It is based on a laminated structure of “light emitting layer / cathode electrode”. (Japanese Patent No. 1526026)
The organic EL element emits light by applying an electric field between the electrodes and passing a current through the EL layer.
When an organic EL element is used as a panel for a display, it is roughly classified into a passive matrix type and an active matrix type according to an electrode configuration and a driving method as in the case of an LCD. In such a panel, an organic EL element is used. As a method of achieving colorization, in addition to a three-color juxtaposition method in which the most basic three-color organic EL materials of R, G, and B are precisely arranged for each pixel of a display device, a white light emitting layer and an R , G and B color filters (also referred to as CF), or a blue light-emitting layer and R and G fluorescence conversion dye filters, such as a panelized organic EL panel structure whose schematic cross section is shown in FIG. There is a CCM (Color Changing Medium) system that can combine the above.
[0004]
By the way, when an organic EL device is formed into a panel for a display to produce an organic EL panel structure, usually, an organic EL light emitting layer in which only a color filter layer and a transparent electrode are formed in advance on a transparent glass substrate is provided. An unlit panel is formed using a photolithography process, and a light emitting layer or the like is provided by vapor deposition or the like on a panel without the formed organic EL light emitting layer. Then, sealing is performed to produce a display panel.
However, when a transparent electrode is formed by performing a photolithography process, a positive resist is generally used, so that a short defect occurs in the transparent electrode due to an unnecessary resist residue or a foreign matter attached to the resist film, which causes a problem. Has become.
Note that, here, for an organic EL display panel, a panel in which an electrode is provided in a panel before the organic EL light emitting layer is provided without the organic EL light emitting layer is simply referred to as a panel, This includes a state where a barrier (corresponding to 485 in FIG. 4) is formed or a state where a barrier is not formed.
A panel for a CCM type organic EL display panel is called a CCM panel.
Such an electrode of the panel is called an organic EL panel electrode.
Further, a barrier layer 460 and an OC layer (overcoat layer) 440 are provided below the transparent electrode 470, and the barrier layer 460 is for protecting the light-emitting layer having low moisture resistance and low solvent resistance. is there.
[0005]
As described above, when a panel in which the organic EL light emitting layer is not provided and the organic EL light emitting layer is not yet provided is formed using a photolithography process, a short-circuit defect of an electrode may occur. Recently, a method of removing and repairing the short defect portion by laser irradiation has been adopted. However, in this method, laser irradiation may reach the lower layer of the short defect portion, and the lower portion of the defect portion may be irradiated. This could cause damage, which was a problem.
Hereinafter, "without damaging the lower layer of the defect portion made of the electrode material" means "the range of damage to such an extent that even if the lower layer is slightly damaged, the lower layer is not substantially affected by the damage." And ".
[0006]
[Patent Document 1]
Japanese Patent Publication No. 1526026
[Problems to be solved by the invention]
As described above, when forming the electrodes for an organic EL display panel, if the short-circuit defect of the generated electrode is removed by laser irradiation, damage may occur in the lower layer of the defective portion, and this measure is required. Was.
The present invention corresponds to this, and more specifically, a method for repairing an electrode defect of an organic EL panel, in which a short defect portion of an electrode for an organic EL panel is repaired by irradiating with a YAG laser. It is an object of the present invention to provide a method capable of repairing a layer below a defective portion without damaging the layer by laser irradiation.
At the same time, it seeks to provide an apparatus that can perform such a method.
[0008]
[Means for Solving the Problems]
The organic EL panel electrode defect repair method according to the present invention is a method for repairing an organic EL panel electrode defect, in which a short defect portion of the organic EL panel electrode is removed by irradiating the electrode with a YAG laser. In the middle of the step of irradiating a YAG laser for removing a defective portion composed of an electrode forming film like the electrode, the step of irradiating the YAG laser on the defective portion and measuring a depth of the defective portion is performed at least once or more. The degree of the progress of the correction at that time is grasped from the relationship between the measured depth and the thickness of the film for electrode formation before the correction which is grasped in advance, and the irradiation of the YAG laser after the measurement is performed. Is adjusted.
In the above, the measuring step is a measurement by a stylus method or a measurement by a laser measuring method.
In addition, the method for correcting a defect of an electrode for an organic EL panel according to the present invention corrects a short-circuit defect of the electrode for an organic EL panel by irradiating a YAG laser to remove the defect. In a method, in a step of irradiating a YAG laser for removing a defect portion formed of an electrode forming film as well as an electrode, a scattered substance scattered at the time of laser irradiation is analyzed, and the scattered substance is a material component of the electrode forming film. Only the point at which only the material component of the lower layer is changed is set as the end point of the correction by laser irradiation.
[0009]
In the above, the wavelength of the YAG laser is a short wavelength equal to or shorter than the fourth harmonic (266 nm) in the ultraviolet region.
Further, in the above, there is provided a method of correcting a short-circuit defect of an electrode in a CCM panel for an organic EL panel of a CCM system.
In the above, the electrode material is ITO.
[0010]
An organic EL panel electrode defect repair apparatus according to the present invention is an organic EL panel electrode defect repair apparatus that corrects a short-circuit defect of an organic EL panel electrode by irradiating a YAG laser. A depth measuring head for measuring the depth of the defect formed by the electrode forming film by irradiating the YAG laser, and / or a scatter for analyzing a scattered substance scattered at the time of laser irradiation. It is characterized by comprising a substance detecting head.
In the above, the head for measuring depth is characterized in that it performs measurement by a stylus method or measures by a laser measurement method.
Further, in the above, an organic EL panel substrate to be processed, on which an electrode made of the transparent conductive film is provided, is mounted on a stage, and a laser irradiation head for irradiating a laser, a head for depth measurement, and / or It is characterized in that the head for detecting scattered substances is integrally formed and is moved XY relative to the substrate for processing an organic EL panel.
In the above, the wavelength of the YAG laser is a short wavelength equal to or shorter than the fourth harmonic (266 nm) in the ultraviolet region.
In the above, the correction of a short-circuit defect portion of an electrode in a CCM panel for a CCM type organic EL panel is a correction target.
In the above, the electrode material is ITO. In the electrode defect repairing apparatus for an organic EL panel according to the present invention, measurement is performed by a method of analyzing a scattered substance scattered at the time of laser irradiation by a scattered substance detection head, and the scattered substance is a material component of the electrode forming film. Only the point when only the material component of the lower layer is changed to the lower layer is set as the end point of the correction by laser irradiation.
[0011]
[Action]
According to the method for repairing a defect of an electrode for an organic EL panel of the present invention, by adopting such a configuration, a short defect portion of an electrode for an organic EL panel is repaired by irradiating a YAG laser to remove the defect. It is possible to provide a method for repairing an electrode defect of a panel for use without damaging a layer below the defective portion.
Specifically, in the middle of the step of irradiating the YAG laser for removing the defective portion formed of the electrode forming film similarly to the electrode, at least one step of measuring the depth of the defective portion by irradiating the YAG laser is performed. The degree of correction at that time is grasped from the relationship between the measured depth and the previously grasped thickness of the electrode forming film before the correction, and the YAG laser after the measurement is obtained. In the process of adjusting the irradiation of the YAG laser for removing the defect portion formed of the electrode forming film like the electrode, or by analyzing the scattering material scattered at the time of laser irradiation, This is achieved by the fact that the point at which the material component of the film for forming an electrode is changed from the material component only to the material component of the lower layer is the end point of the correction by laser irradiation.
That is, based on the relationship between the measured depth and the thickness of the electrode forming film before correction that has been grasped in advance, the degree of progress of the correction at that time is grasped, and irradiation of the YAG laser after the measurement is performed. Damage to the lower layer of the defective part by adjusting or by analyzing the scattered substance scattered at the time of laser irradiation and grasping the point of time when the boundary position between the electrode forming film and the lower layer is reached. The defect can be removed without the need.
Further, by using a short wavelength of 266 nm (fourth harmonic) or less as the wavelength of the YAG laser, it is possible to reduce burning due to thermal damage of the lower layer.
When a short wavelength of 266 nm (fourth harmonic) or less is used, photo-decomposition processing is mainly performed, the scorch due to thermal damage is reduced, the shape is hardly changed by heat, and very fine resolution is obtained. The effect of scattering of the removed material is small.
When the first harmonic (1064 nm), the second harmonic (532 nm), and the third harmonic (355 nm) are used as the wavelength of the YAG laser, burnout occurs due to thermal damage at the time of removal, and the shape changes due to heat. Is also generated, and in some cases, there is an effect of adhesion (hereinafter, also referred to as flying) due to scattering of the removed matter.
Further, the YAG laser is easier to implement as compared with other lasers, and is suitable for such correction.
Examples of depth measurement include measurement by a stylus method or measurement by a laser measurement method.
[0012]
In addition, the present invention can be effectively applied to a method for repairing a short-circuit defect of an electrode in a CCM panel for a CCM type organic EL panel in which a light emitting layer is not provided and before a light emitting layer is provided.
The electrodes in the CCM panel include those composed of only a transparent electrode layer, and those in which a transparent electrode layer and a metal layer (also referred to as an auxiliary electrode) disposed on a surface of the transparent electrode layer which is not on the transparent glass substrate side are used for auxiliary purposes. Examples of the transparent electrode layer include ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide), ZnO, SnO ₂ , and In ₂ O _3. In general, ITO is used, and as the auxiliary electrode layer, , Aluminum (Al), copper (Cu), silver (Ag), platinum (Pt), gold (Au) or the like, or a layer (thin wire) made of the above-mentioned metal simple substance with titanium nitride (TiN), titanium The auxiliary electrode layer may be formed by coating with (Ti) or the like.
When an auxiliary electrode is used as the electrode, the laser output may be changed by a transparent electrode short or an auxiliary electrode short.
Usually, there is a relation of output of transparent electrode removal <output of auxiliary electrode removal.
This is particularly effective when the electrode material is ITO.
[0013]
The organic EL panel electrode defect repairing apparatus of the present invention, having such a configuration, repairs a short defect portion of the organic EL panel electrode by irradiating a YAG laser to remove the short-circuited portion. It is possible to provide a device for repairing an electrode of an organic EL panel electrode, which can carry out a method for repairing an electrode defect of a panel without damaging a layer below a defective portion.
Examples of the depth measuring head include a head that measures by a stylus method or a laser measurement method and directly obtains the depth of removal of a defective portion by laser irradiation. From the relationship with the thickness of the electrode forming film before the correction, the progress of the correction at that time can be grasped, and the irradiation of the YAG laser after the measurement can be adjusted.
Further, the point of time when the head reaches the boundary position between the electrode forming film and the lower layer can be grasped by the flying material detecting head for analyzing the flying material flying at the time of laser irradiation.
Further, a laser irradiation head for irradiating a laser, a head for measuring a depth and / or a head for detecting a scattered substance are integrally formed, and are relatively moved in XY relative to the substrate for an organic EL panel to be processed. Therefore, these position controls are simplified, and as a result, the processing accuracy is high.
When the wavelength of the YAG laser is shorter than the fourth harmonic (266 nm) in the ultraviolet region, the scorch due to thermal damage to the lower layer of the defective portion is reduced, and the shape of the device can be hardly changed by heat. Offering is possible.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a process sectional view for explaining a first example of an embodiment of a method for correcting a defect of an electrode for an organic EL panel of the present invention, and FIG. 2 is partially transparent from the A1 side in FIG. FIG. 3 is an enlarged view of a portion A2 in FIG. 1E, FIG. 5 is an example of an embodiment of a defect repairing apparatus for an electrode for an organic EL panel of the present invention, and FIG. It is the schematic which showed an example of the method of measuring the depth removed by irradiating a part with laser.
FIG. 1A shows a cross section taken along line B1-B2 in FIG.
1, 2, 3, 5, and 6, 110 is a glass substrate, 120 is a CF layer (also called a color filter layer), 130 is a CCM layer, 140 is an OC layer (also called an overcoat layer), 150 is an insulating layer, 160 is a barrier layer, 170 is a transparent electrode (positive electrode), 175 is a defective portion (also referred to as a short defect portion), 175A is a remaining film portion, 176 is a defect repair portion, 177 is a damaged portion, and 180 is YAG A laser beam, 500 is a defect repairing device for an organic EL panel electrode, 510 is a laser irradiation head, 520 is a depth measuring head, 530 is a stage, 535 is a bench stand (also referred to as a stage support), 540 is a support, 545 and 546 are rails, 550 is a support stand, 555 and 556 are rails, 580 is a substrate to be repaired, 600 is a displacement meter, 610 is a semiconductor laser drive circuit, and 620 is a semiconductor laser drive circuit. 630 is a light transmitting lens, 640 is a laser light, 645 is a reflected light, 650 is a light receiving lens, 660 is a light position detecting element (light sensor section), 670 and 675 are signal amplification circuits, and 680 is a sample. , D0, D1, and D2 are sample surfaces, and S0, S1, and S2 are light reaching positions of the light position detecting element (light sensor unit).
[0015]
First, a first example of an embodiment of a method for correcting a defect of an electrode for an organic EL panel according to the present invention will be described with reference to FIG.
In the first example, the short defect 175 of the transparent electrode 170 in the CCM panel before the light emitting layer is provided for the organic EL panel of the CCM type having a layer configuration as shown in FIG. The correction is made by irradiating and removing the YAG laser without giving the image.
In the first example, during the process of irradiating the YAG laser 180 for removing the defective portion 175 made of the same electrode forming film as the transparent electrode 170, the irradiation of the YAG laser 180 is temporarily stopped, and the apparatus shown in FIG. The step of measuring the depth of the defect portion by irradiating the YAG laser with the depth measuring head is performed once, and the measured depth D1 (FIG. 1C) is grasped in advance. The progress of the correction at that time is grasped from the relationship with the thickness T1 (FIG. 1 (c)) of the electrode forming film before the correction, and the irradiation of the YAG laser after the measurement is adjusted.
[0016]
The first example will be briefly described below with reference to FIG.
First, the thickness of the electrode material of the substrate to be repaired on which the transparent electrode has been processed is grasped in advance.
The thickness is measured by a stylus method or a laser measurement method.
The measurement by the stylus method is performed by, for example, a surface roughness measuring device (DEKTAK manufactured by Alpac Inc.), but is not limited thereto.
As a laser measurement method, a displacement meter (also called a displacement sensor) using a laser is used.
Thus, T0 shown in FIG. 1C is obtained as the thickness of the electrode material near the defect.
At this stage, the defect is removed by irradiating the YAG laser with the wavelength and the output condition of the YAG laser corresponding to the electrode material to be removed, and the output condition of the YAG laser is also determined.
The output condition of the YAG laser is determined by grasping the relationship between the output condition of the YAG laser and the progress of the removal.
ITO can be removed from the first harmonic (1064 nm), the second harmonic (532 nm), the third harmonic (355 nm), and the fourth harmonic (266 nm), but the lower layer (the barrier layer 160 due to thermal damage) can be removed. The fourth harmonic (266 nm) is used in consideration of the degree of scorching, the deformation of the lower layer (barrier layer 160) due to heat, and the state of flying objects.
The CCM panel has a layer configuration as shown in FIG. 2. In general, the transparent electrode 170 is made of ITO having a thickness of about 1000.degree., And the barrier layer 160 is made of a film thicker or equivalent to ITO.
Here, it is assumed that the lower barrier layer 160 is made of a silicon nitride oxide film.
[0017]
Next, the YAG laser 180 of the fourth harmonic (266 nm) is irradiated to the defective portion 175 (FIG. 1A), and the irradiation of the YAG laser 180 is temporarily stopped before penetrating the transparent conductive film of the defective portion 175. (FIG. 1 (b))
In addition, separately from the product, a sufficiently thick ITO film is formed on a glass substrate for testing, and the irradiation condition of the YAG laser 180 is changed, and the progress of the removal is grasped. deep.
Next, the depth D1 at which the defective portion is removed is measured. (Fig. 1 (c))
As the measurement of the depth D1 from which the defective portion is removed, for example, measurement by a stylus method using a surface roughness measuring device (DEKTAK manufactured by Alpac Inc.) or measurement using a displacement meter by a laser measurement method is applied. it can.
[0018]
Next, from the known T0 and the measured D1, the thickness of the residual film 175T of the defective portion 175 can be known. From this, the output condition of the YAG laser 180 is adjusted, and irradiation is performed by a predetermined amount (FIG. 1 (d)), the irradiation is stopped, and the correction is ended. (Fig. 1 (e))
Note that the output condition of the YAG laser 180 here is determined in advance by grasping in advance the relationship between the output condition of the YAG laser and the progress of removal.
FIG. 3 shows that the barrier layer 160 has been removed by the depth h here in the state after the modification, but the barrier layer 160 is provided with the light emitting layer as shown in FIG. When the organic EL panel is manufactured, the light-emitting layer is provided for protecting the light-emitting layer from humidity and the like.
[0019]
Next, a second example of the embodiment of the method for correcting a defect of an electrode for an organic EL panel of the present invention will be described.
The second example is a head for detecting a scattered substance (for example, an ion detector) of a scattered substance scattered by laser irradiation without temporarily stopping YAG laser irradiation in the first example of the embodiment. And Shimadzu Corporation, etc.), and confirms in real time whether or not the depth from which the defective portion has been removed reaches the interface with the barrier layer 160, and when it is determined that the boundary has been reached. Then, the laser irradiation is stopped.
The method of the second example utilizes the property that the type of ions detected at the interface position changes during removal by ion irradiation. Need to do.
[0020]
Next, a third example of the embodiment of the method for correcting a defect of an electrode for an organic EL panel of the present invention will be described.
The third example is a compromise between the first example and the second example. In the first example of the above-described embodiment, at the time of the laser irradiation shown in FIG. Analysis using a scattered matter detection head (for example, an ion detector, manufactured by Shimadzu Corporation), so that the boundary between the electrode material and the barrier layer can be known, and when it is determined that the boundary has been reached Then, the laser irradiation is stopped.
The third example also utilizes the property that the type of ions detected at the interface position changes during removal by ion irradiation, as in the second example. Meanwhile, it is necessary to perform a correction process.
[0021]
Next, an example of an embodiment of a defect repairing apparatus for an electrode for an organic EL panel according to the present invention will be briefly described with reference to FIG.
This example is an apparatus for performing the method of correcting a defect of an electrode for an organic EL panel of the first example, and measures a depth of a defective portion formed of an electrode forming film by irradiating a YAG laser. And a depth measuring head 520 for measurement.
In this example, the depth measuring head 520 performs measurement by a laser measurement method.
A substrate to be processed 580 provided with an electrode made of a transparent conductive film is placed on a stage 530 provided on a bench 535, and a laser irradiation head 510 for irradiating a laser and a depth measuring head 520 are provided. Are integrally formed, and are moved XY relative to the substrate 530 to be processed.
In the organic EL panel electrode defect repair apparatus of the present example, the laser irradiation head 510 and the depth measuring head 520 are integrally fixed to the support 550 and disposed on the support 540 in the x direction. The support section 540 can move in the X direction along the two rails 555 and 556, and the support section 540 can move in the Y direction along the two rails 545 and 546 arranged on the bench table 535 in the Y direction. The irradiation head 510 and the depth measuring head 520 can be integrally moved relative to the substrate 530 in the X and Y directions.
Here, the fourth gradation wave (266 nm) of the YAG laser is used as the laser.
[0022]
In this example, a displacement meter using a laser is used as the depth measuring head 520.
FIG. 6 shows a triangulation type laser displacement meter as an example of a displacement meter using a laser, which will be briefly described.
In this displacement meter 600, the reflected light applied to the sample 680 via the light-transmitting lens 630 transmits the reference position of the light position detecting element 660 via the light receiving lens 650 when the surface of the sample 680 is at the reference position D 0. When the surface of the sample 680 is located at the position D1 shifted from the reference position D0, the light reflected from the sample surface D1 is accordingly moved to the reference position of the optical position detecting element 660. And reaches a position S1 shifted by a predetermined distance from the position S0. Similarly, when the surface of the sample 680 is at the position D2 shifted from the reference position D0, the position of the sample 680 is shifted from the sample surface D2. The reflected light reaches a position S2 which is shifted by a predetermined distance from the reference position S0 of the light position detecting element 660.
That is, the light arrival position in the light position detection element and the position of the sample surface can be correlated.
Therefore, the position of the sample surface can be detected by detecting the light arrival position in the light position detecting element.
[0023]
Although not shown, as a modification of the organic EL panel electrode defect repair apparatus shown in FIG. 5, in order to carry out the organic EL panel electrode defect repair method of the second or third example, In the apparatus shown in FIG. 5, a scattered substance detection head (for example, an ion detector, manufactured by Shimadzu Corporation) for detecting scattered substances scattered by laser irradiation is integrally provided with the laser irradiation head 510. What was done.
In this modification, in some cases, it is necessary to operate the entire apparatus under an evacuation state.
[0024]
【The invention's effect】
The present invention, as described above, is a method for correcting an electrode defect of an organic EL panel, in which a short defect portion of an electrode for an organic EL panel is corrected by irradiating a YAG laser to remove the defect. It is possible to provide a method that can be corrected without causing damage.
[Brief description of the drawings]
FIG. 1 is a process cross-sectional view for explaining a first example of an embodiment of a method for correcting a defect of an electrode for an organic EL panel of the present invention.
FIG. 2 is a partially see-through view from the A1 side in FIG.
FIG. 3 is an enlarged view of a portion A2 in FIG. 1 (b).
FIG. 4 is a sectional view of a CCM type organic EL panel structure.
FIG. 5 is an example of an embodiment of a defect repairing device for an electrode for an organic EL panel according to the present invention.
FIG. 6 is a schematic view showing an example of a method for measuring a depth of a defect portion by irradiating a laser beam with a laser beam.
[Explanation of symbols]
110 glass substrate 120 CF layer (also called color filter layer)
130 CCM layer 140 OC layer (also called overcoat layer)
150 Insulating layer 160 Barrier layer 170 Transparent electrode (positive electrode)
175 defective part (also called short defect part)
175A Remaining film portion 176 Defect repair portion 177 Damage portion 180 YAG laser beam 500 Defect repair device 510 for organic EL panel electrode Laser irradiation head 520 Depth measurement head 530 Stage 535 Bench stand (also referred to as stage support portion)
540 Support section 545, 546 rail 550 Support base 555, 556 rail 580 Substrate for correction 600 Displacement gauge 610 Semiconductor laser drive circuit 620 Semiconductor laser (light emitting element)
630 Light transmitting lens 640 Laser light 645 Reflected light 650 Light receiving lens 660 Optical position detecting element (optical sensor section)
670, 675 Signal amplification circuit 680 Sample D0, D1, D2 Sample surface S0, S1, S2 Light arrival position of light position detecting element (light sensor unit)

Claims (12)

A method for repairing a defect in an electrode for an organic EL panel, wherein the short defect in the electrode for an organic EL panel is corrected by irradiating a YAG laser to remove the defect. In the process of irradiating the YAG laser for removing the defect, the step of irradiating the YAG laser of the defective portion and measuring the removed depth is performed at least once, and the measured depth is grasped in advance. An organic EL panel characterized in that the progress of the correction at that time is grasped from the relationship with the thickness of the electrode forming film before the correction before the correction, and the irradiation of the YAG laser after the measurement is adjusted. For repairing electrode defects. 2. The method according to claim 1, wherein the measuring step is performed by a stylus method or a laser measuring method. A method for repairing a defect in an electrode for an organic EL panel, wherein the short defect in the electrode for an organic EL panel is corrected by irradiating a YAG laser to remove the defect. In the process of irradiating the YAG laser for removing the scattered material, the scattered material scattered at the time of laser irradiation is analyzed, and the time when the scattered material is changed from only the material component of the electrode forming film to only the material component of the lower layer is irradiated with the laser. A method for repairing a defect in an electrode for an organic EL panel, wherein the method is used as an end point of repair by the method. 4. The method according to claim 1, wherein a wavelength of the YAG laser is a short wavelength equal to or shorter than a fourth harmonic (266 nm) in an ultraviolet region. 5. The method according to claim 1, wherein the method is a method for repairing a short-circuit defect of an electrode in a CCM panel for a CCM organic EL panel. 6. The method according to claim 1, wherein the electrode material is ITO. A defect repairing apparatus for an electrode for an organic EL panel, which corrects a short-circuit defect of an electrode for an organic EL panel by irradiating the electrode with a YAG laser to remove the defect. An organic head comprising a depth measuring head for measuring a depth removed by irradiating a laser and / or a scattered substance detecting head for analyzing a scattered substance scattered at the time of laser irradiation. Electrode defect repair device for EL panel. 8. The defect correcting apparatus for an electrode of an organic EL panel according to claim 7, wherein the depth measuring head performs measurement by a stylus method or performs measurement by a laser measurement method. 9. The laser irradiation head according to claim 7, wherein a substrate for processing an organic EL panel provided with the electrode made of the transparent conductive film is mounted on a stage, and a laser irradiation head for irradiating a laser is provided. Or a defect of an electrode for an organic EL panel, which is integrally formed with a head for detecting a scattered substance and is relatively moved XY with respect to the substrate for an organic EL panel to be processed. Correction device. 10. The defect repairing apparatus for an electrode for an organic EL panel according to claim 7, wherein the wavelength of the YAG laser is a short wavelength equal to or shorter than the fourth harmonic (266 nm) in the ultraviolet region. 11. The defect repairing apparatus for an electrode of an organic EL panel according to claim 7, wherein repair of a short-circuit defect of an electrode in the CCM panel for an organic EL panel of the CCM method is targeted for repair. 12. The defect repairing apparatus for an electrode for an organic EL panel according to claim 7, wherein the electrode material is ITO.

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