JP2004253821A - Hybrid integrated circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-size radiofrequency power module which can reduce a packaging area. <P>SOLUTION: Hybrid integrated circuit device has a cryogenic calcination multilayer interconnection board, at least one or more active components(FET chip) and passive components which are loaded on major faces of the multilayer interconnection board, a conductive wire for connecting an electrode of the active components with a wiring(Ag-Pt) of the multilayer interconnection board, a cap fixed to the multilayer interconnection board so as to cover the major faces of the multilayer interconnection board, and plural multilayer-interconnected electrode terminals which are mounted on a rear face of the multilayer interconnection board. A lower part of the multilayer interconnection board has a strip line structure, and an upper part of the multilayer interconnection board has a microstrip line structure. A ground wiring has a network structure. A semiconductor chip is fixed to a hollow provided on the major faces of the multilayer interconnection board, and the height of the electrode surface of the semiconductor chip is set to be almost the same as the height of the wiring surface of the multilayer interconnection board. A thermal via is provided under the semiconductor chip. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a hybrid integrated circuit device using a low-temperature fired multilayer wiring board, and more particularly to a technique which is effective when applied to a small high-frequency power amplifier (high-frequency power module: RF power module) used for a transmission unit of a cellular telephone or the like.

  2. Description of the Related Art An RF power module used in a wireless communication section of a mobile communication device such as a mobile phone or a mobile phone has a package formed by a metal flange and a cap. In addition, electrode terminals such as signal terminals protrude from one side surface of the package, and mounting fins also serving as ground electrodes protrude from lower portions of both ends of the package.

  In the package, a wiring board having conductors on both sides is fixed on the flange. This wiring board has a so-called microstrip line structure in which a circuit pattern is provided on the front surface of a dielectric substrate and a ground (GND) pattern is provided on the back surface. The wiring board is partially provided with a hole. A heat sink having good thermal conductivity is fixed to the flange at the bottom of the hole. A semiconductor chip made of a field effect transistor is fixed to the heat sink.

  As an example of the dimensions of a high-frequency power module (MOS / power module for high-frequency power amplification), a high-frequency power module called an E type has a width of 22 mm, a depth of 12 mm, and a height of 3.7 mm (for example, Non-patent document 1).

"Hitachi Review" Issued by Hitachi Hyoronsha, No. 4, 1993, April 25, pp. 12-26

  Conventional high-frequency power modules are roughly classified into a metal flange (header), a wiring board fixed on the flange, and a heat sink fixed to the flange using holes provided in the wiring board. It comprises a semiconductor chip to be fixed, a cap fixed to the flange to cover the wiring board, and an electrode terminal (lead) fixed to the wiring board and having a tip protruding out of the cap. Both ends of the flange partially protrude outside the cap to form mounting fins that also serve as ground electrodes.

  Electronic components such as capacitors, resistors and zener diodes are mounted on the surface of the wiring board. Further, the wiring on the surface of the wiring board and the electrode of the semiconductor chip are connected by a conductive wire.

  As a result of studying the miniaturization, high performance, and low cost of the conventional high-frequency power module, it was found that the following matters hindered miniaturization, high functionality, low cost, and the like.

  (1) The wiring board has a microstrip line structure in which circuit patterns such as signal wiring and power supply wiring are provided on the front surface of a dielectric substrate, and a ground (GND) pattern is provided on the back surface. This is for adjusting the characteristics by trimming the resistance or adjusting the line width after the wiring board is manufactured. However, in the microstrip line structure in which the signal wiring is formed on one surface of the dielectric substrate, the wiring length of the signal wiring is long in order to obtain desired electrical characteristics. This increases the size of the package, which hinders miniaturization of the high-frequency power module.

  (2) Since the wiring board is fixed on the flange and further covered with the cap, the height of the package is increased, and miniaturization of the high-frequency power module is hindered.

  (3) Since a part of both ends of the flange protrudes outside the cap to form a mounting fin that also serves as a ground electrode, the size of the high-frequency power module increases. Therefore, the mounting area also increases.

  (4) Since the leads protrude long from one side of the package (cap), the high-frequency power module becomes large. Therefore, the mounting area also increases.

  (5) Since the height of the surface of the semiconductor chip is different from the height of the wiring surface of the wiring board, the wire connecting the electrode of the semiconductor chip and the wiring becomes longer. Further, since the semiconductor chip is fixed on the heat sink fixed to the flange at the bottom of the hole provided in the wiring board, the distance between the electrode of the semiconductor chip and the wiring becomes longer, and the wire becomes longer. The longer the wire, the higher the resistance and the lower the high frequency characteristics. For example, the output gain decreases.

  (6) Since the wiring substrate is formed of a dielectric substrate, it is not possible to directly mount a semiconductor chip generating a large amount of heat on the wiring substrate. Therefore, a hole is formed in the wiring substrate, and a metal flange at the bottom of the hole is provided. Since a heat sink having good heat conductivity is fixed to the heat sink and the semiconductor chip is fixed to the heat sink, the cost of the high-frequency power module is increased due to an increase in the number of components and an increase in the number of assembly steps.

  (7) Since the support member, the heat radiation member, and the flange serving also as the ground electrode are fixed to the wiring board, the number of components is increased.

  (8) For mounting the high-frequency power module, a part of the flange is formed to form the mounting fins. However, the mounting surface height of each mounting fin tends to vary due to the forming, and the reliability of mounting is increased. May be impaired.

An object of the present invention is to provide a small-sized hybrid integrated circuit device capable of reducing a mounting area.
It is another object of the present invention to provide a high-performance hybrid integrated circuit device.
Another object of the present invention is to provide a hybrid integrated circuit device that can achieve a reduction in manufacturing cost.
The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

  The outline of a typical invention among the inventions disclosed in the present application will be briefly described as follows.

(1) The hybrid integrated circuit device has the following structure.
(A) a multilayer wiring board, at least one or more active components and passive components mounted on a main surface of the multilayer wiring board, and a conductive property for connecting an electrode of the active component and a wiring of the multilayer wiring board. The multilayer wiring board includes a wire, a cap fixed to the multilayer wiring board so as to cover a main surface of the multilayer wiring board, and a plurality of electrode terminals of the multilayer wiring provided on a back surface of the multilayer wiring board.

  (B) On the multilayer wiring board, semiconductor chips constituting field effect transistors are connected and arranged in multiple stages to constitute a high-frequency power module.

  (C) The multilayer wiring board has a structure in which dielectric layers are stacked in multiple stages with wirings interposed therebetween, and the signal wiring provided between the dielectric layers is sandwiched above and below the ground wiring via the dielectric layer. Strip line structure. The upper part of the multilayer wiring board has a microstrip line structure.

  (D) The ground wiring has a stitch structure.

  (E) In the active component, a semiconductor chip is fixed to a depression provided on a main surface of the multilayer wiring board, and an electrode surface of the semiconductor chip and a wiring surface of the multilayer wiring board have substantially the same height; The wire connecting the electrode of the semiconductor chip and the wiring extends substantially linearly.

  (F) A thermal via is provided at a desired portion of the multilayer wiring board so as to extend from a desired dielectric layer to a lowermost dielectric layer.

  (G) A semiconductor chip is located on the thermal via.

  (H) Among the electrode terminals on the rear surface of the multilayer wiring board, the ground electrode terminals are partially covered with a resist film which does not wet the bonding material for mounting, and are a plurality of electrode terminals independent of each other.

  (I) The arrangement intervals of the electrode terminals on the back surface of the multilayer wiring board are the same.

  (J) Among the electrode terminals on the back surface of the multilayer wiring board, at least the electrode terminals other than the ground electrode are connected to the wiring of each layer via end face through-hole terminals extending vertically on the side surface of the multilayer wiring board.

  (K) The multilayer wiring substrate is a low-temperature fired multilayer ceramic substrate, and the wiring is formed of a highly conductive metal made of a silver-based metal.

  (2) In the configuration of the means (1), the cap is removably attached to a recess provided in the multilayer wiring board via a hook.

The effects obtained by the typical inventions among the inventions disclosed in the present application will be briefly described as follows.
According to the means (1), (a) the high-frequency power module is a multilayer wiring board having active components and passive components such as a field effect transistor mounted on a main surface thereof, and is fixed to the main surface side of the multilayer wiring substrate. Since the rectangular structure is formed by the cap and the cap, the lead is not protruded from the package and the mounting fin is not protruded as in the related art, so that the size is reduced.

  (B) Since the multilayer wiring board has a structure in which a microstrip line structure is stacked on a strip line structure, even if the length of a transmission line (such as a signal wiring) is long, the transmission lines are provided in two stages. The size of the substrate can be reduced, and downsizing of the high-frequency power module can be achieved.

  (C) Since the signal wiring provided between the dielectric layers has a structure in which the signal wiring is sandwiched above and below by the ground wiring via the dielectric layer, an electric / electromagnetic shield is provided and the high-frequency characteristics are stabilized.

  (D) Since the ground wiring has a stitch structure, a dielectric layer enters the stitch portion, the bonding strength between the dielectric layers above and below the ground wiring is increased, and a multilayer wiring board that is difficult to peel off is obtained. Therefore, a high-frequency power module having excellent moisture resistance is obtained.

  (E) In the active component, a semiconductor chip is fixed to a depression provided on a main surface of the multilayer wiring board, and an electrode surface of the semiconductor chip and a wiring surface of the multilayer wiring board have substantially the same height; The wire connecting the electrode of the semiconductor chip and the wiring extends substantially linearly. Therefore, the wire is shortened, the resistance is reduced, and the high-frequency characteristics are improved. For example, the output gain increases.

  (F) A thermal via is provided at a desired portion of the multilayer wiring board so as to extend from a desired dielectric layer to a lowermost dielectric layer. Therefore, heat dissipation is enhanced, and stable electric characteristics can be obtained.

  (G) A semiconductor chip is located on the thermal via. Therefore, the heat generated by the semiconductor chip is quickly dissipated to the outside, and the field effect transistor operates stably.

  (H) Among the electrode terminals on the rear surface of the multilayer wiring board, the ground electrode terminals are partially covered with a resist film which does not wet the bonding material for mounting, and are a plurality of electrode terminals independent of each other. Accordingly, since the bonding material for mounting is uniformly wetted on each electrode terminal, each electrode terminal is securely fixed to the mounting board via the bonding material for mounting.

  (I) The arrangement intervals of the electrode terminals on the back surface of the multilayer wiring board are the same. Therefore, each electrode terminal does not have a bias of the bonding material for mounting, and does not generate a defect such as a bridge of the bonding material for mounting. In addition, self-alignment of mounting becomes possible.

  (J) Among the electrode terminals on the back surface of the multilayer wiring board, at least the electrode terminals other than the ground electrode are connected to the wiring of each layer via end face through-hole terminals extending vertically on the side surface of the multilayer wiring board. That is, the high-frequency power module has an LCC (leadless chip carrier) structure, and can be reduced in size.

  (K) Since the multilayer wiring board is a multilayer ceramic substrate fired at a low temperature, the wiring can be formed of a highly conductive metal made of a silver-based metal (Ag-Pt) having a low melting point, so that high-frequency characteristics are good due to reduction in resistance. It becomes. That is, the output gain can be improved.

  According to the means (2), since the cap is detachably attached to the recess provided in the multilayer wiring board via the hook, the cap can be easily attached to and detached from the multilayer wiring board. From the above (1) and (2), the high-frequency power module has a small size because it has an LCC structure. Further, since the wiring board is a multilayer wiring board, the signal wiring can be formed in each stage, so that a predetermined length can be obtained, the size of the wiring board can be reduced, and the size of the package can be reduced. With these, the miniaturization and mounting area of the high-frequency power module can be reduced.

  From the above (1) and (2), since the high-frequency power module uses the low-temperature fired multilayer wiring board, the wiring can be formed by a highly conductive metal, and the signal wiring in the inner layer has a stripline structure, so that the electric / electromagnetic is obtained. In addition, the heat generated in the semiconductor chip is quickly radiated out of the package by the thermal via, thereby improving the high frequency characteristics.

  From the above (1) and (2), since the high frequency power module is formed by providing the electrode terminals on the back surface of the multilayer wiring board and covering the multilayer wiring board with the cap, the number of parts is reduced and the number of assembly steps is reduced. It is possible to achieve a reduction in manufacturing costs due to a reduction in cost and material costs.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

  1 to 9 are views relating to a high-frequency power module according to an embodiment (Example 1) of the present invention. FIG. 1 is a perspective view showing the appearance of the high-frequency power module, and FIG. 2 is a cross-sectional view of the high-frequency power module. , FIG. 3 is a plan view showing the high-frequency power module with the cap removed, FIG. 4 is a partial perspective view showing the structure of the multilayer wiring board constituting the high-frequency power module, and FIG. FIG. 6 is a plan view showing a wiring pattern (first-layer wiring) formed on the exposed surface of the dielectric layer. FIG. 6 is a plan view showing a wiring pattern (first-layer wiring) formed between the upper dielectric layer and the middle dielectric layer of the multilayer wiring board. FIG. 7 is a plan view showing a second-layer wiring, FIG. 7 is a plan view showing a wiring pattern (third-layer wiring) formed between a middle dielectric layer and a lower dielectric layer of the multilayer wiring board, and FIG. Back side of the multilayer wiring board That is, a bottom view showing a wiring pattern (fourth layer wiring) formed on the exposed surface of the lower dielectric layer. FIG. 9 shows a part of the second layer wiring and a part of the fourth layer wiring serving as ground wiring in the multilayer wiring board. FIG.

  As shown in FIG. 1, a hybrid integrated circuit device (high-frequency power module) 1 according to the first embodiment includes a plate-shaped multilayer wiring board 2 and solder 3 so as to cover the main surface (upper surface) of the multilayer wiring board 2. (For example, a high-temperature solder of Pb / Sn = 95/5), and the cap 4 is fixed through the cap 4, and has a flat rectangular shape in appearance. The high-frequency power module 1 has, for example, a width of 8 mm, a length of 12.3 mm, and a height of 2.5 mm, which is significantly larger than the conventional E-type high-frequency power module having a width of 22 mm, a depth of 12 mm, and a height of 3.7 mm. It becomes small.

Further, as shown in the bottom view of the multilayer wiring board 2 in FIG. 8, a plurality of electrode terminals (external terminals) 5 are provided on the back surface of the multilayer wiring board 2. The electrode terminals 5 are provided on both sides of the multilayer wiring board 2, respectively, and are arranged at a constant pitch along the longitudinal direction of the multilayer wiring board 2. On one side (upper side in the figure), input terminals (P _in ) are from left to right. 6, a ground terminal (GND) 7, a ground terminal (GND) 8, and a gain control terminal (V _apc ) 9. On the other side (lower side in the figure), an output terminal (P _out ) 10, a ground terminal (GND) 11, a ground terminal (GND) 12, and a power supply terminal (V _dd ) 13 are _arranged from left to right.

  On the side surface of the multilayer wiring board 2 corresponding to the input terminal 6, the gain control terminal 9, the output terminal 10, and the power supply terminal 13, an end face through hole is provided in a portion from the front surface to the back surface of the multilayer wiring substrate 2. That is, when the high-frequency power module 1 is mounted on the mounting board, each electrode terminal is connected and mounted at the electrode portion on the back surface of the multilayer wiring board 2 and the through-hole 20 on the side surface of the multilayer wiring board 2, thereby ensuring reliable mounting. Can be performed.

  As described above, although the high-frequency power module 1 of the first embodiment is a hybrid integrated circuit device, it has an LCC structure in which a single semiconductor chip is incorporated in a package, and the product can be downsized.

  On the other hand, in FIG. 8, the hatched portions extending so as to partition the four ground terminals (GND) 7, 8, 11, and 12 are used as mounting bonding materials used when mounting the high-frequency power module 1 on a mounting board. The resist film 14 is formed of a non-wetting material. For example, since the high-frequency power module 1 is mounted on a mounting board by soldering, the resist film 14 is a solder resist film having a thickness of about 20 μm.

  The resist film 14 is provided so as to cover the ground wiring. Therefore, on the back surface of the multilayer wiring board 2, a ground (GND) integrated over a region where the four ground terminals (GND) 7, 8, 11, 12 extend and a region covered with the resist film 14. ) The wiring 15 extends. This is because, as will be described later, a so-called strip line structure in which signal wiring, power supply wiring, and the like are sandwiched between ground wirings via dielectric layers on the upper and lower sides to provide electric and electromagnetic shielding.

  The reason why the integral ground wiring 15 is partially covered with the resist film 14 to form a plurality of independent ground terminals 7, 8, 11, and 12 is that the area difference between the electrode terminals is not so large. That is, when the high-frequency power module 1 is mounted by soldering, if the area difference between the electrode terminals is extremely large, the floating height of the high-frequency power module 1 in a wide area is increased due to the surface tension of the solder, and the electrode terminals are provided on all sides. In the small area portion, there is a possibility that a joining failure occurs in a part. Therefore, in the first embodiment, the area ratio of each electrode terminal is set to about twice at the maximum.

  In addition, self-alignment is promoted by arranging the electrode terminals at an equal pitch in the electrode terminals arranged in a line. Further, it is possible to prevent a mounting failure such as a solder bridge.

  The small circles shown in FIG. 8 are thermal vias 16 for transmitting the heat generated in the high-frequency power module 1 to the outside, and only a part is shown in FIG. The thermal via 16 has a structure in which a thermal via hole is filled with a metal having good thermal conductivity. The thermal via 16 is provided, for example, below a semiconductor chip that is an active component that generates a large amount of heat.

  The cap 4 constituting the high-frequency power module 1 has a structure in which, for example, a metal plate is formed to form a peripheral wall, and both ends of the multilayer wiring board 2 are covered with end walls 21 on both ends, and connection pieces 23 projecting from the side walls 22 on both sides. , And is fixed to the multilayer wiring board 2 via the solder 3. Further, a part of the side wall 22 is opened. The cap 4 has a thickness of 0.1 mm and is made of, for example, plating-free nickel-white or nickel-plated phosphor bronze.

  As shown in FIGS. 2 and 4, the multilayer wiring board 2 includes an upper dielectric layer (upper dielectric plate) 25, a middle dielectric layer (middle dielectric plate) 26, and a lower dielectric layer (lower dielectric plate). 27 and a dielectric layer (dielectric plate) in three layers.

  On the upper surface (exposed surface) of the upper dielectric layer 25, a wiring pattern (first-layer wiring 30) as shown in FIG. 5 is provided. A wiring pattern (second wiring 31) as shown in FIG. 6 is provided between the upper dielectric layer 25 and the middle dielectric layer 26, and the middle dielectric layer 26 and the lower dielectric layer 27 are provided. 7, a wiring pattern (third layer wiring 32) as shown in FIG. 7 is provided, and on the back surface (exposed surface) of the lower dielectric layer 27, a wiring pattern (third layer wiring 32) as shown in FIG. 33) is provided.

  The multilayer wiring board 2 is composed of, for example, a low-temperature fired multilayer wiring board in which glass ceramics are laminated, and the wiring uses a highly conductive metal, for example, a silver-based metal. That is, the outer wiring uses Ag-Pt, and the interior wiring uses Ag. The low temperature firing is about 600 ° C., which makes it possible to use Ag having a low melting point. Since Ag is a highly conductive metal having a low resistance value, improvement in high frequency characteristics can be achieved.

5 to 8, 35 is a signal wiring, 36 is a power supply wiring, and 15 is a ground wiring. As a result, the third-layer wiring 32 between the middle dielectric layer 26 and the lower dielectric layer 27 becomes the second wiring 31 on the middle dielectric layer 26 and the fourth wiring below the lower dielectric layer 27. Since all 33 are ground wirings 15, they have a strip line structure. Further, the first layer wiring 30 on the upper dielectric layer 25 has a microstrip line structure because the second layer wiring 31 serving as the ground wiring 15 is provided on the lower surface of the upper dielectric layer 25.
Since the signal wiring of the inner layer is sandwiched between the upper and lower layers via the dielectric layer, electric and electromagnetic shielding becomes possible, and the high frequency characteristics are stabilized.

  The ground wiring 15 between the upper dielectric layer 25 and the middle dielectric layer 26 has a stitch (mesh) structure as shown in FIG. For this reason, the dielectric layers of the upper dielectric layer 25 and the middle dielectric layer 26 enter the stitch portion 55, the bonding strength between the dielectric layers above and below the ground wiring is increased, and the multilayer wiring board 2 is difficult to peel. .

  Each of the first layer wiring 30, the second layer wiring 31, the third layer wiring 32, and the fourth layer wiring 33 has a thickness of about 10 to 20 μm. The overall thickness of the multilayer wiring board 2 is, for example, 0.9 mm.

  On the other hand, as shown in FIGS. 2 and 4, each of the first layer wiring 30, the second layer wiring 31, the third layer wiring 32, and the fourth layer wiring 33 has a desired depth from a desired dielectric layer. Blind via 40 extending from the uppermost dielectric layer to the lowermost dielectric layer, and a blind via 40 extending from the uppermost dielectric layer to the lowermost dielectric layer. They are electrically connected by thermal vias 16 extending through the layers. The blind via 40, the through via 41, and the thermal via 16 have a structure in which a via hole is filled with Ag.

  Also, on both side surfaces of the three upper dielectric layers 25, the middle dielectric layer 26, and the lower dielectric layer 27 which are overlapped with each other, the end surface through holes 20 having a semicircular cross section are provided, and the fourth layer of the lower dielectric layer 27 is formed. The external terminals 5 (the input terminal 6, the ground terminals 7, 811 and 12, the gain control terminal 9, the output terminal 10, and the power supply terminal 13) formed by the wiring 33 are connected.

  As shown in FIGS. 2 to 5, rectangular recesses 42 and 43 are provided in the upper dielectric layer 25, and semiconductor chips 44 and 45 are fixed to the bottoms of the recesses 42 and 43. Due to the depressions 42 and 43, the height of the electrode surface on the upper surface (not shown) of the semiconductor chips 44 and 45 is substantially the same as the height of the wiring surface. For this reason, since the conductive wire 46 connecting the electrodes of the semiconductor chips 44 and 45 and the wiring can be formed with a low tension (loop), the wiring and the electrode of the semiconductor chip can be connected with a short length. In addition, improvement in high-frequency characteristics can be achieved from reduction in resistance. For example, an improvement in output gain can be achieved.

  As shown in FIGS. 2 and 4, the semiconductor chip 45 is fixed to the second layer wiring 31 serving as the ground wiring 15 using a bonding material 47 such as a silver paste. Further, a large number of thermal vias 16 are provided in portions where the semiconductor chips 44 and 45 are fixed, so that heat generated from the semiconductor chips 44 and 45 is quickly transmitted to the outside. The heat is radiated to the mounting board via the ground wiring 15 and the resist film 14 on the back surface of the multilayer wiring board 2. Therefore, the semiconductor chips 44 and 45 perform a stable operation.

As shown in FIGS. 2 to 4, a Zener diode (ZD) 50 is mounted on the surface of the multilayer wiring board 2 as an active component. In addition, chip-type resistors (R _{1 to} R ₆ ) 51, chip-type capacitors (C _{1 to} C ₉ ) 52, and capacitors (bypass capacitors) 53 are mounted as passive components.

  As shown in FIGS. 2 and 3, the semiconductor chips 44 and 45, the wires 46, and some of the resistors 51, the capacitors 52, and the capacitors 53 are covered with a resin 54 for improving moisture resistance.

In the first embodiment, the wiring in the inner layer cannot be corrected. For this reason, after measuring the line characteristics, the desired electrical characteristics can be obtained by selecting and incorporating components (resistance, capacitor, etc.) that match the line characteristics.
In the first embodiment, a high-frequency power module for mobile phones of 800 to 1000 MHz is obtained by incorporating field-effect transistors in two stages.

The high-frequency power module according to the first embodiment has the following effects.
(1) The high-frequency power module is formed by a multilayer wiring board 2 on which active components and passive components such as a field effect transistor are mounted on a main surface, and a cap 4 fixed to the main surface side of the multilayer wiring substrate 2. Because of the rectangular structure, the leads are not protruded from the package and the mounting fins are not protruded unlike the related art, so that the size is reduced. Particularly, since the leads do not protrude for a long time, the mounting area can be significantly reduced. In the case of mounting, in the case of the E type, the mounting area is 20 mm × 14.35 mm, but in the case of the first embodiment, it is significantly reduced to 12.3 mm × 8 mm.

  (2) Since the multilayer wiring board 2 has a structure in which a microstrip line structure is stacked on a strip line structure, the transmission lines are provided in two stages even if the length of the transmission line (such as a signal wiring) is increased, so that the multilayer wiring is provided. The size of the substrate can be reduced, and downsizing of the high-frequency power module can be achieved.

  (3) Since the signal wiring provided between the dielectric layers has a structure in which the signal wiring is sandwiched above and below by the ground wiring via the dielectric layer, an electric / electromagnetic shield is performed, and the high-frequency characteristics are stabilized.

  (4) Since the ground wiring in the inner layer has a stitch structure, the dielectric layer enters the stitch portion, the bonding strength between the dielectric layers above and below the ground wiring is increased, and a multilayer wiring board that is difficult to peel off is obtained. Therefore, a high-frequency power module having excellent moisture resistance is obtained.

  (5) In the active component, the semiconductor chips 44 and 45 are fixed to the depressions 42 and 43 provided on the main surface of the multilayer wiring board 2, and the heights of the electrode surface of the semiconductor chip and the wiring surface of the multilayer wiring board are substantially the same. The height of the wire 46 connects the electrode of the semiconductor chip and the wiring, and the wire 46 extends substantially linearly. Therefore, the wire is shortened, the resistance is reduced, and the high-frequency characteristics are improved. For example, the output gain increases.

  (6) A thermal via 16 is provided at a desired portion of the multilayer wiring board 2 so as to extend from a desired dielectric layer to a lowermost dielectric layer. Therefore, heat dissipation is enhanced, and stable electric characteristics can be obtained.

  (7) The semiconductor chips 44 and 45 are located on the thermal via 16. Therefore, the heat generated by the semiconductor chips 44 and 45 is quickly dissipated to the outside, and the field effect transistor operates stably.

  (8) In the electrode terminals 5 on the back surface of the multilayer wiring board 2, the ground wiring 15 is partially covered with a resist film 14 that does not wet the mounting bonding material, and a plurality of mutually independent ground terminals 7, 8,. 11 and 12. Therefore, since the mounting bonding material is uniformly wetted on each electrode terminal 5, each electrode terminal 5 is securely fixed to the mounting board via the mounting bonding material.

  (9) The arrangement intervals of the electrode terminals 5 on the back surface of the multilayer wiring board 2 are the same. Therefore, each electrode terminal 5 does not have a bias of the bonding material for mounting, and a defect such as a bridge of the bonding material for mounting does not occur. In addition, self-alignment of mounting becomes possible.

  (10) Of the electrode terminals 5 on the rear surface of the multilayer wiring board 2, at least the electrode terminals other than the ground terminals 7, 8, 11, and 12 are provided through end face through holes 20 extending vertically on the side surface of the multilayer wiring board 2. To the wiring of each layer. That is, the high-frequency power module has an LCC (leadless chip carrier) structure, and can be reduced in size.

  (11) Since the multilayer wiring board 2 is a multilayer ceramic substrate fired at a low temperature, the wiring can be formed of a highly conductive metal made of a silver-based metal (Ag-Pt) having a low melting point. It becomes. That is, the output gain can be improved.

  Although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various modifications can be made without departing from the gist of the invention. For example, as shown in FIG. 10, if the cap 4 is configured to be detachably attached to the edge of the recess 60 provided in the multilayer wiring board 2 via the hook 61, the cap 4 Can be easily attached and detached.

  Further, in the above embodiment, since the multilayer wiring board 2 has a multilayer wiring structure, the thickness of the dielectric layer can be further reduced, and the capacitance can be increased. In addition, since the multilayer wiring board 2 is used, the length of the signal wiring can be further increased, so that the characteristic impedance can be increased. In this case, if a material having a high dielectric constant, such as titanium oxide or barium titanate, is used as the dielectric layer (dielectric plate), the increase in capacitance is further increased.

Further, the multilayer wiring board 2 can be formed using a wiring board material other than glass ceramic.
In the case of a low-temperature fired multilayer wiring board, gold or copper can be used as the wiring made of a highly conductive metal.

  In the above description, the case where the invention made by the inventor is mainly applied to the high frequency power module which is the application field as the background has been described, but the invention is not limited to this. The present invention is applicable to at least a hybrid integrated circuit device.

FIG. 1 is a perspective view illustrating an appearance of a high-frequency power module that is Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view of the high-frequency power module according to the first embodiment. FIG. 3 is a plan view illustrating the high-frequency power module with the cap removed according to the first embodiment. FIG. 2 is a partial perspective view illustrating a structure of a multilayer wiring board in the high-frequency power module according to the first embodiment. FIG. 4 is a plan view showing a wiring pattern (first-layer wiring) formed on the surface of the multilayer wiring board in the high-frequency power module according to the first embodiment, that is, on the exposed surface of the upper dielectric layer. FIG. 3 is a plan view showing a wiring pattern (second-layer wiring) formed between the upper dielectric layer and the middle dielectric layer of the multilayer wiring board in the high-frequency power module according to the first embodiment. FIG. 4 is a plan view showing a wiring pattern (third-layer wiring) formed between the middle dielectric layer and the lower dielectric layer of the multilayer wiring board in the high-frequency power module of the first embodiment. FIG. 5 is a bottom view showing a wiring pattern (fourth layer wiring) formed on the back surface of the multilayer wiring board, that is, on the exposed surface of the lower dielectric layer in the high-frequency power module of the first embodiment. FIG. 3 is a plan view showing a part of a second-layer wiring and a fourth-layer wiring serving as ground wiring in the high-frequency power module of the first embodiment. It is sectional drawing which shows the high frequency power module which is another Example of this invention.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 1 ... Hybrid integrated circuit device (high frequency power module), 2 ... Multilayer wiring board, 3 ... Solder, 4 ... Cap, 5 ... Electrode terminal (external terminal), 6 ... Input terminal (P _in ), 7 ... Ground terminal (GND) ), 8 ground terminal (GND), 9 gain control terminal (V _apc ), 10 output terminal (P _out ), 11, 12 ground terminal (GND), 13 power supply terminal (V _dd ), 14. Resist film, 15: ground wiring, 16: thermal via, 20: end surface through hole, 21: end surface wall, 22: side wall, 23: connection piece, 25: upper dielectric layer, 26: middle dielectric layer, 27: lower stage Dielectric layer, 30 first-layer wiring, 31 second-layer wiring, 32 third-layer wiring, 33 fourth-layer wiring, 35 signal wiring, 36 power-supply wiring, 40 blind-type via, 41 Through-type vias, 2, 43 ... recess, 44, 45 ... semiconductor chip, 46 ... wire, 47 ... bonding material, 50 ... Zener diode, 51 ... resistors, 52 ... capacitor, 53 ... capacitor, 54 ... Resin

Claims (4)

A multilayer wiring board;
Active components and passive components mounted on the main surface of the multilayer wiring board,
A conductive wire connecting the electrode of the active component and the wiring of the multilayer wiring board,
A hybrid integrated circuit device, comprising: a plurality of electrode terminals of the multilayer wiring provided on a back surface of the multilayer wiring board. A multilayer wiring board;
At least one or more active components and passive components mounted on the main surface of the multilayer wiring board,
A conductive wire connecting the electrode of the active component and the wiring of the multilayer wiring board,
A cap fixed to the multilayer wiring board so as to cover a main surface of the multilayer wiring board,
A hybrid integrated circuit device, comprising: a plurality of electrode terminals of the multilayer wiring provided on a back surface of the multilayer wiring board. The hybrid integrated circuit device according to claim 2,
The hybrid integrated circuit device according to claim 1, wherein the cap is detachably attached via a hook to a hook formed by a recess provided in the multilayer wiring board. The hybrid integrated circuit device according to any one of claims 1 to 3,
A hybrid integrated circuit device, wherein the active component is covered with a resin.

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